Module for generating radical, apparatus for atomic layer deposition using the same, and method for atomic layer deposition

Abstract

An embodiment of the present invention provides a radical generation module comprising: a housing having an internal space and a wall portion defining the internal space; a resistance heating portion disposed in the internal space; and a reactant inlet formed in the wall portion of the housing adjacent to the resistance heating portion for injecting a reactant into the internal space; an atomic layer deposition apparatus using the same; and an atomic layer deposition method.

Description

Technology Field

[0001] The present invention relates to a radical generation module, an atomic layer deposition apparatus using the same, and an atomic layer deposition method. More specifically, it relates to a radical generation module that converts reactants into radicals in a space isolated from a process chamber for atomic layer deposition, an atomic layer deposition apparatus using the same, and an atomic layer deposition method. Background Technology

[0002] The miniaturization of semiconductor devices has led to a significant increase in transistor density, thereby improving the performance of various IT products ranging from computers to smartphones. To achieve this miniaturization, semiconductor manufacturing technology requires more sophisticated deposition and patterning techniques. However, in conventional nanometer-level semiconductor device manufacturing, accurate pattern alignment is difficult, which is cited as a limitation in the advancement of miniaturization processes.

[0003] Currently, top-down patterning methods, which are complexly composed of deposition, photolithography, and etching, are primarily utilized in semiconductor device manufacturing. However, as device sizes continue to decrease, the difficulty of the process has increased rapidly, leading to various manufacturing issues. For example, dry etching, which is mainly used in top-down processes, has the disadvantage that it is difficult to form additional patterns on vertical structures within the substrate due to its strong anisotropic characteristics.

[0004] Furthermore, the top-down process utilizes photolithography; however, manufacturing finer circuit patterns requires lithography technology that uses extreme ultraviolet (EUV) light sources with shorter wavelengths than conventional ones. Yet, not only is introducing EUV exposure equipment expensive, but securing such equipment is also currently difficult.

[0005] Recently, atomic layer deposition (ALD) techniques have been preferred as they can simultaneously satisfy both thin film thickness and reliability. Among ALD methods, plasma-enhanced atomic layer deposition (PEALD) utilizes plasma as a reactant, enabling the realization of high-quality thin films via a low-temperature process due to its high reactivity. However, plasma ALD can cause substrate damage because high-energy ions are generated. The problem to be solved

[0006] The purpose of the embodiments of the present invention is to provide a radical generation module that converts reactants for atomic layer deposition into radicals and prevents the converted radicals from recombining with the original reactants, an atomic layer deposition apparatus using the same, and an atomic layer deposition method. means of solving the problem

[0007] An embodiment of the present invention provides a radical generation module comprising: a housing having an internal space and a wall portion defining the internal space; a resistance heating portion disposed in the internal space; and a reactant inlet formed in the wall portion of the housing adjacent to the resistance heating portion for injecting a reactant into the internal space.

[0008] An embodiment of the present invention provides a radical generation module comprising a feedthrough member coupled to the housing, wherein the resistance heating member can receive power through the feedthrough member.

[0009] An embodiment of the present invention provides a radical generation module in which the feedthrough member is coupled to the housing by a vacuum flange.

[0010] An embodiment of the present invention provides a radical generation module in which the resistance heating unit and the reactant inlet are positioned on a virtual line extending in the direction in which the reactant is injected.

[0011] An embodiment of the present invention provides a radical generation module in which the housing includes a purge gas inlet.

[0012] An embodiment of the present invention provides a radical generation module in which the housing includes a window portion.

[0013] An embodiment of the present invention provides a radical generation module, wherein the housing includes a chamber connector for connecting the internal space of the radical generation module to a process chamber of an atomic layer deposition apparatus.

[0014] An embodiment of the present invention provides a radical generating module in which the housing has four hollow tubes connected in a cross shape.

[0015] An embodiment of the present invention provides a radical generating module, wherein the housing comprises a first housing tube having a first end, a second housing tube having a second end, a third housing tube having a third end, and a fourth housing tube having a fourth end, wherein the first housing tube and the third housing tube are aligned and connected in a straight line in a first length direction, and the second housing tube and the fourth housing tube are aligned and connected in a second length direction perpendicular to the first length, wherein a feedthrough member is coupled to the first end, a purge gas inlet is formed at the second end, a window portion is coupled to the third end, and a chamber connector is formed at the fourth end.

[0016] An embodiment of the present invention provides an atomic layer deposition apparatus comprising a process chamber and a radical generation module, wherein the radical generation module comprises: a housing having an internal space and a wall portion defining the internal space; a resistance heating portion disposed in the internal space; and a reactant inlet formed in the wall portion of the housing adjacent to the resistance heating portion for injecting a reactant into the internal space, and wherein the process chamber and the radical generation module are connected by a valve.

[0017] An embodiment of the present invention provides an atomic layer deposition apparatus comprising a feedthrough member coupled to the housing, wherein the resistance heating member can receive power through the feedthrough member.

[0018] An embodiment of the present invention provides an atomic layer deposition apparatus in which the feedthrough member is coupled to the housing by a vacuum flange.

[0019] An embodiment of the present invention provides an atomic layer deposition apparatus in which the resistance heating unit and the reactant injection port are positioned on a virtual line extending in the direction in which the reactant is injected.

[0020] An embodiment of the present invention provides an atomic layer deposition apparatus in which the housing includes a purge gas inlet.

[0021] An embodiment of the present invention provides an atomic layer deposition apparatus in which the housing includes a window portion.

[0022] An embodiment of the present invention provides an atomic layer deposition apparatus in which the housing includes a chamber connector for connecting the internal space of the radical generation module to the process chamber.

[0023] An embodiment of the present invention provides an atomic layer deposition apparatus in which the housing has four hollow tubes connected in a cross shape.

[0024] An embodiment of the present invention provides an atomic layer deposition apparatus, wherein the housing comprises a first housing tube having a first end, a second housing tube having a second end, a third housing tube having a third end, and a fourth housing tube having a fourth end, wherein the first housing tube and the third housing tube are aligned and connected in a straight line in a first length direction, and the second housing tube and the fourth housing tube are aligned and connected in a second length direction perpendicular to the first length, wherein a feedthrough member is coupled to the first end, a purge gas inlet is formed to the second end, a window portion is coupled to the third end, and a chamber connector is formed to the fourth end.

[0025] An embodiment of the present invention provides an atomic layer deposition method comprising: preparing a substrate inside a process chamber; exposing the substrate to a precursor; exposing a reactant to a heating element at a temperature of 1,300°C or higher and 2,000°C or lower in a first space isolated from the process chamber; converting the reactant into a radical in the first space; transferring the radical to the process chamber; and exposing the substrate to the radical.

[0026] An embodiment of the present invention provides an atomic layer deposition method in which the heating unit can be heated to 1,600°C or higher and 2,000°C or lower. Effects of the invention

[0027] According to an embodiment of the present invention, an atomic layer deposition process can be performed at a lower temperature compared to a conventional plasma atomic layer deposition process.

[0028] In addition, according to an embodiment of the present invention, a high-quality thin film can be formed by lowering the impurity content of the thin film formed by atomic layer deposition.

[0029] In addition, according to an embodiment of the present invention, damage to the substrate can be prevented and step coverage improved. Brief explanation of the drawing

[0030] Figure 1 is a schematic diagram showing the structure of a typical atomic layer deposition apparatus. FIG. 2 is a schematic diagram showing the structure of an atomic layer deposition apparatus having a radical generation module according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing the structure of a radical generation module according to an embodiment of the present invention. Figure 4 is a schematic diagram showing the reactant connection and purge gas connection combined in the radical generation module of Figure 3. FIG. 5 is a schematic diagram showing the structure of a process chamber connection part connecting a radical generation module and a process chamber according to an embodiment of the present invention. FIG. 6 is a flowchart of an atomic layer deposition method according to an embodiment of the present invention. Specific details for implementing the invention

[0031] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. Identical or similar components are assigned the same reference number regardless of drawing symbols, and redundant descriptions thereof will be omitted. The suffixes "module" and "part" used for components in the following description are assigned or used interchangeably solely for the ease of drafting the specification and do not inherently possess distinct meanings or roles.

[0032] In this description, expressions such as “include,” “equip,” or “compose” are intended to refer to certain characteristics, numbers, steps, actions, elements, parts or combinations thereof, and should not be interpreted to exclude the existence or possibility of one or more other characteristics, numbers, steps, actions, elements, parts or combinations thereof other than those described.

[0033] In addition, when describing the embodiments disclosed in this specification, if it is determined that a detailed description of related prior art could obscure the essence of the embodiments disclosed in this specification, such detailed description is omitted.

[0034] The attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings; it should be understood that all modifications, equivalents, and substitutions included within the concept and technical scope of the present invention are included.

[0035] Below, embodiments of the present invention will be described in detail with reference to the drawings.

[0036] Figure 1 is a schematic diagram showing the structure of a typical atomic layer deposition apparatus.

[0037] An atomic layer deposition apparatus (100) includes a process chamber (10) and a gas supply unit (140). A reaction space in which an atomic layer deposition process takes place is formed inside the process chamber (110). For example, to create a vacuum environment inside the process chamber (110), the process chamber (110) may be connected to a pump (154) through an exhaust port. The exhaust port is connected to a pump (154), such as a vacuum pump installed outside the process chamber (110), through piping, so that various processing gases inside the reaction space of the process chamber (110) can be exhausted or a vacuum atmosphere can be formed inside the reaction space.

[0038] A substrate support (130) may be installed in a process chamber (110) so that a substrate (S) is placed on its upper portion. A gas injection unit (120) may be installed in the process chamber (110) opposite the substrate support (130) to supply process gas onto the substrate support (130) within the reaction space of the process chamber (110). A gas inlet hole may be formed at the top of the gas injection unit (120), and a plurality of gas outlet holes may be formed at the bottom so that process gas can be supplied uniformly onto the substrate (S). For example, the gas injection unit (120) may be called a shower head.

[0039] The gas supply unit (140) can supply process gas to the gas injection unit (120). For example, when the atomic layer deposition apparatus (100) forms a metal nitride layer, the gas supply unit (140) may include a first supply line (141) for supplying a metal source gas, a second supply line (143) for supplying a reaction gas, and a third supply line (142) for supplying a purge gas. The first to third supply lines (141, 142, 143) may be connected to the gas injection unit (120) through a valve block (146). The valve block (146) may include valves for opening and closing the first to third supply lines (141, 142, 143).

[0040] FIG. 2 is a schematic diagram showing the structure of an atomic layer deposition apparatus having a radical generation module according to an embodiment of the present invention, FIG. 3 is a schematic diagram showing the structure of a radical generation module according to an embodiment of the present invention, FIG. 4 is a schematic diagram showing the appearance of a reactant connection part and a purge gas connection part combined with the radical generation module of FIG. 3, and FIG. 5 is a schematic diagram showing the structure of a process chamber connection part connecting the radical generation module and the process chamber according to an embodiment of the present invention.

[0041] An atomic layer deposition apparatus (200) having a radical generation module according to an embodiment of the present invention comprises a radical generation module (210), a process chamber (110), and a gas supply unit (140). The gas supply unit (140) includes a precursor supply unit (301), a reactant supply unit (302), and a purge gas supply unit (304-1, 304-2, 304-3).

[0042] A substrate (S) on which a thin film is to be formed by atomic layer deposition is loaded into a process chamber (110). A vacuum environment is created inside the process chamber (110) by a vacuum pump (154). At this time, since damage to the process chamber (110) may occur if the vacuum pump (154) is operated immediately at an atmospheric pressure of 760 Torr, the process chamber (110) can be controlled to a vacuum of mTorr through the piping of reference numeral 155 to create a vacuum environment. In order to unload the substrate (S) after the atomic layer deposition process is completed, nitrogen gas is supplied to the process chamber (110) from a purge gas supply unit (304-1) to equalize the pressure inside the device with atmospheric pressure, and then the substrate (S) is unloaded.

[0043] A precursor is supplied from the precursor supply unit (301) to the process chamber (110). The purge gas supply unit (304-2) can supply nitrogen gas to purge the inside of the piping supplying the precursor from the precursor supply unit (301) to the process chamber (110).

[0044] An atomic layer deposition apparatus (200) utilizes a radical generation module (210) to expose various reactants to a high-temperature heating element heated to a temperature of 1,300°C or higher, thereby converting the reactants into a radical state for atomic layer deposition. Radicals are atoms, molecules, or ions that possess unpaired valence electrons, and due to the unpaired valence electrons, radicals are very unstable and have the characteristic of being highly reactive. Accordingly, the atomic layer deposition apparatus (200) according to an embodiment of the present invention may include a configuration that prevents the radicals converted from the reactants from recombining back into the original reactant state. In an atomic layer deposition apparatus (200) according to an embodiment of the present invention, the radicals may be radical atoms.

[0045] According to an embodiment of the present invention, radicals generated by a high-temperature heat ray form radicals without the formation of high-energy ions or photons, unlike other plasmas; thus, they can overcome the limitations of conventional PEALD, such as substrate damage or low step coverage. Furthermore, since the radicals formed according to an embodiment of the present invention possess high reaction energy, they can easily oxidize or reduce precursors during the atomic layer deposition process, thereby enabling the deposition of high-quality thin films even at relatively low temperatures.

[0046] The radical generation module (210) can decompose the reactants into radical atoms by exposing various reactants to a heating part (240), such as a metal heating wire, heated to a temperature of 1,300°C or higher and 2,000°C or lower, preferably 1,600°C or higher and 2,000°C or lower. Since the radical atoms generated at this time have high reaction energy, they can be applied to low-temperature processes or processes requiring low impurity content. In addition, an atomic layer deposition process can be performed without damaging the substrate by utilizing the radical atoms formed by the radical generation module (210). The radical generation module (210) can prevent the radical atoms converted from the reactants from recombining back into the original reactant state.

[0047] The radical generation module (210) includes a housing (212) and a heating unit (240). The housing (212) is composed of an internal space (214) and a wall (216) defining the internal space, and the wall (214) may be formed of a material that does not react with the reactant. The wall (214) may be formed of, for example, SUS304.

[0048] The heating unit (240) is placed in the internal space (214) of the housing. The heating unit (240) may be, for example, a resistance heating unit, and may be a filament formed from a metal heating wire having a high melting point and high oxidation stability for resistance heating. The resistance heating unit (240) may be a coil-shaped filament. The resistance heating unit (240) receives current from a power supply unit (250). If the resistance heating unit (240) is a filament, the maximum heating temperature of the filament during resistance heating can be controlled by changing the diameter of the filament. For example, the filament constituting the resistance heating unit (240) may be made of 99.999% tungsten and may have a diameter of 0.8 mm. A filament formed of tungsten can be heated up to 2,000°C.

[0049] The resistance heating unit (240) and the power supply unit (250) can be electrically connected through a feedthrough member (252). The feedthrough (252) is a member installed in a through hole formed in the wall of the chamber to supply external power to a device installed inside the chamber while maintaining pressure inside the vacuum chamber or high-pressure chamber, or to transmit electrical signals from a device installed inside the chamber to an external device.

[0050] The feed-through member (252) can be coupled to the first end (222) of the housing (212). The feed-through member (252) can be connected to the housing (212) by a vacuum fitting member, for example, a VCR (vacuum coupling radiation) vacuum fitting type. Preferably, it can be detachably coupled to the housing (212) using a vacuum flange. The vacuum flange may be, for example, a CF flange used for ultra-high vacuum. The CF flange is a type in which a rotary type flange and a non-rotary type flange are combined, and a gasket is inserted between the flanges and fastened using bolts and nuts. The gasket between the flanges is made of a material that is relatively softer than the flanges and can seal the space between the flanges.

[0051] A reactant inlet (218) for supplying atomic layer deposition reactants to the housing (212) of the radical generation module is formed in the wall (216) of the housing. A reactant connection (260) is connected to the reactant inlet (218), and a reactant supply unit (302) is connected to the reactant connection (260). It is preferable that the reactant inlet (218) be formed in the housing wall (216) at a location adjacent to the resistance heating unit (240).

[0052] To explain in detail, the reactant inlet (218) and the resistance heating unit (240) can be positioned so that they overlap with a virtual line extending in the direction in which the reactant is injected (direction of the arrow in FIG. 3). That is, the resistance heating unit (240) and the reactant inlet (218) can be positioned on a virtual line extending in the direction in which the reactant is injected through the reactant inlet (218) (direction of the arrow in FIG. 3). By positioning the resistance heating unit (240) and the reactant inlet (218) to overlap with the virtual line extending in the direction in which the reactant is injected (direction of the arrow in FIG. 3), the reactant inlet (218) can be formed at the closest possible distance to the resistance heating unit (240). Therefore, the injected reactant can be exposed to the resistance heating unit (240) as efficiently as possible. Radical atoms generated by the resistance heating unit (240) move to the process chamber (110) where the atomic layer deposition process is performed.

[0053] The reactant connection part (260) can be connected to the housing (212) by a vacuum fitting member (254), for example, a VCR (vacuum coupling radiation) vacuum fitting type, so as to supply various reactants to the radical generation module (210). Thus, various reactant supply parts (302) can be connected to the radical generation module (210).

[0054] A purge gas inlet (225) for supplying purge gas may be formed at the second end (224) of the housing (212). The radical generation module (210) may be purged by a purge gas, such as nitrogen gas, supplied from the purge gas supply unit (304-3). The purge gas supply unit (304-3) is connected to the purge gas inlet (225) through a purge gas connection unit (262). The purge gas inlet (225) and the purge gas connection unit (262) may be connected by a vacuum fitting member (254), for example, a VCR (vacuum coupling radiation) vacuum fitting type.

[0055] A window portion (227) for measuring the temperature of a resistance heating portion (240) may be coupled to the third end portion (226) of the housing (212). The third end portion (226) and the window portion (227) may be connected by a vacuum fitting member (254), for example, a VCR (vacuum coupling radiation) vacuum fitting type. The window portion (227) may be formed of a transparent material such as quartz, but is not limited thereto. The window portion (227) may be formed of a material capable of measuring the temperature of the resistance heating portion (240) inside the radical generation module (210) using a high temperature meter such as an infrared radiation thermometer.

[0056] A chamber connector (229) is formed at the fourth end (228) of the housing (212) to connect the housing (212) of the radical generation module with the atomic layer deposition process chamber (110). The internal space (214) of the housing and the reaction space of the atomic layer deposition chamber can be connected to each other by the chamber connector (229). The internal space (214) of the housing and the reaction space of the process chamber (110) can be connected by a vacuum fitting member (254), for example, a VCR (vacuum coupling radiation) vacuum fitting type.

[0057] The radical generation module (210) is a separate module isolated from the process chamber (110) where the atomic layer deposition process is performed, and the internal space (214) of the radical generation module and the reaction space of the process chamber (110) are isolated from each other. The separated radical generation module (214) and the process chamber (110) are joined by a vacuum fitting member (254). Additionally, the internal space (214) of the radical generation module and the reaction space of the process chamber (110) can be connected to or closed by a valve (256). That is, when the valve (258) is closed, the internal space (214) of the radical generation module and the reaction space of the process chamber (110) are isolated, and when the valve (256) is opened, the internal space (214) of the radical generation module and the reaction space of the process chamber (110) can be connected to each other. Therefore, by preventing oxygen or impurities in the process chamber (110) from flowing into the radical generation module (210) by means of the valve (256), it is possible to prevent the resistance heating part or filament from being oxidized or damaged.

[0058] The housing (212) of the radical generation module may be formed by connecting four hollow tubes (272, 274, 276, 278) in a cross (╋) shape. One end of the first housing tube (272) may be the first end (222). One end of the second housing tube (274) may be the second end (224). One end of the third housing tube (276) may be the third end (226). One end of the fourth housing tube (278) may be the fourth end (228).

[0059] The resistance heating section (240) may be disposed inside the first housing tube (272), and the reactant inlet (218) may be formed in the wall (216) of the first housing tube (272). The first housing tube (272) and the third housing tube (276) may be connected by being aligned in a straight line along the length direction (first length direction) of the first and third housing tubes. The second housing tube (274) and the fourth housing tube (278) may be connected by being aligned in a straight line along the length direction (second length direction) of the second and fourth housing tubes. At this time, the first length direction and the second length direction may be perpendicular to each other. Accordingly, the first end (222) and the third end (226) may be arranged to face each other, and the second end (224) and the fourth end (228) may be arranged to face each other.

[0060] FIG. 6 is a flowchart of an atomic layer deposition method according to an embodiment of the present invention.

[0061] An atomic layer deposition process is performed using an atomic layer deposition apparatus (200) having the radical generation module (210) described above. Content that overlaps with the above description is omitted.

[0062] The atomic layer deposition method comprises the steps of preparing a substrate inside a process chamber (S100), exposing the substrate to a precursor (S102), exposing a reactant to a heating element at a temperature of 1,300°C or higher and 2,000°C or lower in a first space isolated from the process chamber (S104), converting the reactant into a radical in the first space (S106), transferring the radical to the process chamber (S108), and exposing the substrate to the radical (S110). At this time, the first space may be an internal space (214) of a radical generation module. Additionally, the first space and the process chamber may be connected by a valve.

[0063] After injecting the precursors and reactants, a purge gas can be injected into the radical generation module and the process chamber to remove them.

[0064] As described above, the present invention has been explained by specific details such as specific components, limited embodiments, and drawings; however, these are provided merely to aid in a more comprehensive understanding of the invention, and the invention is not limited to the above embodiments. A person skilled in the art to which the invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the invention. Accordingly, the concept of the present invention should not be limited to the described embodiments, and all technical concepts that are equivalent to or have equivalent variations to the claims set forth below, as well as the claims themselves, should be interpreted as being included within the scope of the rights of the present invention. Furthermore, each of the above embodiments may be combined and operated as needed. Explanation of the symbols

[0065] 200: Atomic Layer Deposition (ALD) apparatus 210: Radical Generation Module 212: Housing 240: Resistance heating section 250: Power supply 252: Feedthrough missing 256: Valve

Claims

Claim 1 A radical generating module comprising: a housing having an internal space and a wall portion defining the internal space; a resistance heating portion disposed in the internal space; and a reactant inlet formed in the wall portion of the housing adjacent to the resistance heating portion for injecting a reactant into the internal space; wherein the housing comprises four hollow tubes connected in a cross shape, and the housing comprises a first housing tube having a first end, a second housing tube having a second end, a third housing tube having a third end, and a fourth housing tube having a fourth end, wherein the first housing tube and the third housing tube are aligned and connected in a straight line in a first length direction, and the second housing tube and the fourth housing tube are aligned and connected in a second length direction perpendicular to the first length, wherein a feedthrough member is coupled to the first end, a purge gas inlet is formed to the second end, a window portion is coupled to the third end, and a chamber connector is formed to the fourth end. Claim 2 A radical generating module according to claim 1, comprising a feed-through member coupled to the housing, wherein the resistance heating member can receive power through the feed-through member. Claim 3 In paragraph 2, the feedthrough member is a radical generating module coupled to the housing by a vacuum flange. Claim 4 A radical generation module according to claim 1, wherein the resistance heating unit and the reactant inlet are positioned on an imaginary line extending in the direction in which the reactant is injected. Claim 5 In claim 1, the housing is a radical generating module including a purge gas inlet. Claim 6 In claim 1, the housing is a radical generating module including a window portion. Claim 7 In claim 1, the housing comprises a radical generation module including a chamber connector for connecting the internal space of the radical generation module to a process chamber of an atomic layer deposition apparatus. Claim 8 delete Claim 9 delete Claim 10 An atomic layer deposition apparatus comprising a process chamber and a radical generation module, wherein the radical generation module comprises: a housing having an internal space and a wall portion defining the internal space; and a resistance heating portion disposed in the internal space. an atomic layer deposition apparatus comprising: a reactant inlet formed in a wall of the housing adjacent to the resistance heating part for injecting a reactant into the internal space; wherein the process chamber and the radical generation module are connected by a valve; wherein the housing comprises four hollow tubes connected in a cross shape; wherein the housing comprises a first housing tube having a first end, a second housing tube having a second end, a third housing tube having a third end, and a fourth housing tube having a fourth end; wherein the first housing tube and the third housing tube are aligned and connected in a straight line in a first length direction, and the second housing tube and the fourth housing tube are aligned and connected in a second length direction perpendicular to the first length; wherein a feedthrough member is coupled to the first end, a purge gas inlet is formed at the second end, a window part is coupled to the third end, and a chamber connector is formed at the fourth end. Claim 11 An atomic layer deposition apparatus according to claim 10, comprising a feedthrough member coupled to the housing, wherein the resistance heating member can receive power through the feedthrough member. Claim 12 In claim 11, the feedthrough member is coupled to the housing by a vacuum flange, in an atomic layer deposition apparatus. Claim 13 An atomic layer deposition apparatus according to claim 10, wherein the resistance heating unit and the reactant injection port are positioned on an imaginary line extending in the direction in which the reactant is injected. Claim 14 In item 10, the above housing is an atomic layer deposition apparatus including a purge gas inlet. Claim 15 In item 10, the above housing is an atomic layer deposition apparatus including a window portion. Claim 16 In claim 10, the above housing comprises a chamber connector for connecting the internal space of the radical generation module to the process chamber, an atomic layer deposition apparatus. Claim 17 delete Claim 18 delete Claim 19 delete Claim 20 delete

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