Photodetection devices and electronic devices

Abstract

The present disclosure relates to a photodetector and an electronic device capable of improving sensor characteristics. A photodetector is provided having a plurality of pixels, each having a photoelectric conversion region, and a structure having a first film made of a first material and a second film made of a second material different from the first material, formed in a grid shape when viewed in a planar manner on a semiconductor substrate having the photoelectric conversion region formed thereon. The present disclosure can be applied, for example, to a CMOS-type solid-state imaging device.

Description

Technology Field

[0001] The present disclosure relates to a light detection device and an electronic device, and in particular, to a light detection device and an electronic device capable of improving sensor characteristics. Background Technology

[0002] In a solid-state imaging device, a configuration in which an interpixel light-blocking film is formed between adjacent pixels is known. Patent Document 1 discloses a structure in which an interpixel light-blocking film is formed to penetrate an anti-reflection film and come into contact with a trench. Prior art literature

[0003] Specification of U.S. Patent Application Publication No. 2020 / 0083268 The problem to be solved

[0004] However, in the technology disclosed in Patent Document 1, there is a concern that sufficient sensor characteristics cannot be obtained, so it is required to improve the sensor characteristics.

[0005] The present disclosure is made in consideration of these circumstances and is intended to enable the improvement of sensor characteristics. means of solving the problem

[0006] A light detection device of one aspect of the present disclosure is a light detection device having a plurality of pixels, each having a photoelectric conversion region, and a structure having a first film comprising a first material and a second film comprising a second material different from the first material, formed in a grid shape when viewed in a planar manner on a semiconductor substrate forming the photoelectric conversion region.

[0007] An electronic device according to one aspect of the present disclosure is an electronic device equipped with a light detection device having a structure formed in a grid shape when viewed in a planar manner, the structure having a first film comprising a first material and a second film comprising a second material different from the first material, on a semiconductor substrate forming the photoelectric conversion region, each having a plurality of pixels, each having a photoelectric conversion region.

[0008] In a light detection device and electronic device of one aspect of the present disclosure, a plurality of pixels are provided, each having a photoelectric conversion region, and on a semiconductor substrate forming the photoelectric conversion region, a structure having a first film comprising a first material and a second film comprising a second material different from the first material is formed in a grid shape when viewed in a planar view.

[0009] A light detection device of one aspect of the present disclosure is a light detection device having a plurality of pixels, each having a photoelectric conversion region, and a conductor formed in a device isolation region formed on a semiconductor substrate that forms the photoelectric conversion region and a potential applied thereto, and a structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material, formed in a grid shape when viewed in a planar manner on the semiconductor substrate.

[0010] An electronic device of one aspect of the present disclosure is an electronic device equipped with a light detection device having a structure formed on a semiconductor substrate having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material, the structure being formed in a grid shape when viewed in a planar manner.

[0011] In a light detection device and electronic device of one aspect of the present disclosure, a plurality of pixels are provided, each having a photoelectric conversion region, and a conductor is formed in a device isolation region formed on a semiconductor substrate that forms the photoelectric conversion region and a potential is applied thereto, and on the semiconductor substrate, a structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material is formed in a grid shape when viewed in a planar manner.

[0012] In addition, the light detection device of one aspect of the present disclosure may be an independent device or may be an internal block constituting a single device. Brief explanation of the drawing

[0013] Figure 1 is a drawing showing an example of the configuration of a solid-state imaging device. FIG. 2 is a drawing showing a first example of a structure including a pixel (100). Figure 3 is a drawing showing an example of a manufacturing method including a process for forming the structure of Figure 1. Figure 4 is a drawing showing an example of a manufacturing method including a process for forming the structure of Figure 1. FIG. 5 is a drawing showing a second example of a structure including a pixel (100). FIG. 6 is a drawing showing a third example of a structure including a pixel (100). FIG. 7 is a drawing showing a fourth example of a structure including a pixel (100). Figure 8 is a drawing showing an example of a manufacturing method including a process for forming the structure of Figure 7. Figure 9 is a drawing showing an example of a manufacturing method including a process for forming the structure of Figure 7. FIG. 10 is a drawing showing a fifth example of a structure including a pixel (100). FIG. 11 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 10. FIG. 12 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 10. FIG. 13 is a drawing showing a sixth example of a structure including a pixel (100). FIG. 14 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 13. FIG. 15 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 13. FIG. 16 is a drawing showing a seventh example of a structure including a pixel (100). FIG. 17 is a drawing showing the eighth example of a structure including a pixel (100). FIG. 18 is a drawing showing a ninth example of a structure including a pixel (100). FIG. 19 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 18. FIG. 20 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 18. FIG. 21 is a drawing showing the 10th example of a structure including a pixel (100). FIG. 22 is a drawing showing the 11th example of a structure including a pixel (100). FIG. 23 is a drawing illustrating the key points of the first embodiment. FIG. 24 is a drawing showing a first example of a structure including a pixel (200). FIG. 25 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 24. FIG. 26 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 24. FIG. 27 is a drawing showing a second example of a structure including a pixel (200). FIG. 28 is a drawing showing a third example of a structure including a pixel (200). FIG. 29 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 28. FIG. 30 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 28. FIG. 31 is a drawing showing a fourth example of a structure including a pixel (200). FIG. 32 is a drawing showing a fifth example of a structure including a pixel (200). FIG. 33 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 32. FIG. 34 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 32. FIG. 35 is a drawing showing a sixth example of a structure including a pixel (200). FIG. 36 is a drawing showing a seventh example of a structure including a pixel (200). FIG. 37 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 36. FIG. 38 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 36. FIG. 39 is a drawing showing an example of a manufacturing method including a process for forming the structure of FIG. 36. FIG. 40 is a drawing showing the eighth example of a structure including a pixel (200). FIG. 41 is a drawing illustrating the key points of the second embodiment. FIG. 42 is a drawing illustrating the key points of the second embodiment. Figure 43 is a drawing showing an example of the configuration of an electronic device. Specific details for implementing the invention

[0014] (Configuration of a solid-state imaging device)

[0015] Figure 1 is a drawing showing an example of the configuration of a solid-state imaging device.

[0016] In FIG. 1, the solid-state imaging device (10) is a CMOS (Complementary Metal O x It is a solid-state imaging device of the ide Semiconductor type. The solid-state imaging device (10) is an example of a light detection device to which the present disclosure is applied. The solid-state imaging device (10) is composed of a pixel array unit (21), a vertical driving unit (22), a column signal processing unit (23), a horizontal driving unit (24), an output unit (25), and a control unit (26).

[0017] The pixel array section (21) has a plurality of pixels (100) arranged in a two-dimensional manner on a substrate including silicon (Si). The pixel (100) has a photoelectric conversion region including a photodiode and a plurality of pixel transistors. The pixel transistors are composed of a transfer transistor, a reset transistor, a select transistor, and an amplification transistor.

[0018] In the pixel array section (21), for a plurality of pixels (100) arranged in a two-dimensional plane, a pixel driving line (41) is formed for each row and connected to a vertical driving section (22), and a vertical signal line (42) is formed for each column and connected to a column signal processing section (23).

[0019] The vertical driving unit (22) is configured with a shift register or an address decoder, etc., and drives each pixel (100) arranged in the pixel array unit (21). The pixel signal output from the pixel (100) selected and scanned by the vertical driving unit (22) is supplied to the column signal processing unit (23) through the vertical signal line (42).

[0020] The column signal processing unit (23) performs a predetermined signal processing on the pixel signal output through the vertical signal line (42) from each pixel (100) of the selected row for each pixel column of the pixel array unit (21), and temporarily retains the pixel signal after signal processing. As for the signal processing, processing such as noise removal or Correlated Double Sampling (CDS) is performed.

[0021] The horizontal driving unit (24) is configured with a shift register or an address decoder, and sequentially selects unit circuits corresponding to the pixel sequence of the column signal processing unit (23). Through the selection scan by the horizontal driving unit (24), the pixel signal processed by the column signal processing unit (23) is output to the output unit (25) through the horizontal signal line (51).

[0022] The output unit (25) performs a predetermined signal processing on pixel signals sequentially input from each of the column signal processing units (23) through the horizontal signal line (51), and outputs the resulting signal.

[0023] The control unit (26) is composed of a timing generator that generates various timing signals, and based on the various timing signals generated by the timing generator, it performs driving control of the vertical driving unit (22), column signal processing unit (23), and horizontal driving unit (24).

[0024] In addition, in the following description, for the sake of the description, in the first embodiment, a pixel arranged in a two-dimensional shape in the pixel array section (21) is described as a pixel (100), whereas in the second embodiment, a pixel arranged in a two-dimensional shape in the pixel array section (21) is described as a pixel (200) to distinguish them.

[0025] <1. First Embodiment>

[0026] A structure comprising pixels (100) arranged in a two-dimensional manner in a pixel array portion (21) of a solid-state imaging device (10) is described.

[0027] (Example 1)

[0028] FIG. 2 is a drawing showing a first example of a structure including a pixel (100). FIG. 2A shows a cross-sectional structure. FIG. 2B shows a plan view when the cross-sectional structure of FIG. 2A is cut along the X-X' plane indicated by the dashed line in the drawing. In the following description, regarding the cross-sectional structure, the structure in the vertical direction (Z direction) in the drawing is also referred to as a vertical structure, and the structure in the horizontal direction (X direction) in the drawing is also referred to as a horizontal structure.

[0029] In FIG. 2A, the pixel (100) has a photoelectric conversion region (111). For example, the photoelectric conversion region (111) is configured to include a semiconductor region of a second conductivity type in a well region of a first conductivity type formed on a silicon substrate. The first conductivity type can be p-type and the second conductivity type can be n-type.

[0030] The photoelectric conversion region (111) is electrically and optically separated by a device isolation region (101) as a pixel isolation region. The device isolation region (101) is formed to surround the photoelectric conversion region (111). The device isolation region (101) includes a device isolation structure that is Front Full Trench Isolation (FFTI) and has a structure including a first region (112) and a second region (113) formed in a groove (trench). For example, silicon oxide (SiO2) is used as the material for the first region (112). For example, polysilicon (Poly-Si) is used as the material for the second region (113).

[0031] A reflection-preventing film (102) is formed on the upper surface of the silicon substrate forming the photoelectric conversion region (111). The reflection-preventing film (102) is formed by stacking the first layer (121) to the fifth layer (125).

[0032] As the material of the first layer (121), aluminum oxide (AlO₂) x) is used. As the material for the second layer (122), for example, hafnium oxide (HfO₂) is used. x ) is used. As the material for the third layer (123), for example, silicon oxide (SiO2) is used. As the material for the fourth layer (124), for example, hafnium oxide (HfO2) is used. x ) is used. As the material for the fifth layer (125), for example, aluminum oxide (AlO₂) is used. x ) is used. Also, the number of layers of the anti-reflection film (102) is not limited to 5 layers and may be other layers.

[0033] A color filter (141) is formed on the upper surface of the anti-reflection film (102). On the side of the color filter (141), a structure (103) having a structure including a low refractive index film (131) and a high refractive index film (132) is formed. The structure (103) is formed to surround the color filter (141) and can function as a light-blocking film between pixels. In the structure (103), the high refractive index film (132) is formed to surround (cover) the entire low refractive index film (131).

[0034] The low refractive index film (131) is formed from a material with a lower refractive index than the high refractive index film (132). The high refractive index film (132) is formed from a material with a higher refractive index than the low refractive index film (131). For example, as a material for the high refractive index film (132), aluminum oxide (AlO₂) x ) is used, and as the material of the low refractive index film (131), aluminum oxide (AlO) is used. x A material with a lower refractive index than that can be used. It is preferable that the difference between the refractive index of the low-refractive-index film (131) and the refractive index of the high-refractive-index film (132) be large.

[0035] Although the structure (103) has a vertical structure, it is formed not only on the side of the color filter (141) but also in the groove (105) that penetrates the anti-reflection film (102) and reaches the upper part of the device separation region (101). The structure (103) penetrates to the surface of the silicon substrate and contacts the second region (113) of the device separation region (101). In this way, by forming the structure (103) through the anti-reflection film (102), color mixing can be suppressed. Meanwhile, although the structure (103) has a horizontal structure, its width becomes narrower than the width of the second region (113) of the device separation region (101), resulting in a thinner structure.

[0036] As shown in the plan view of FIG. 2B, the structure (103) has a structure in which a low-refractive-index film (131), which is entirely covered by a high-refractive-index film (132), surrounds a color filter (141), and each pixel formed on a silicon substrate has the same structure. That is, the structure (103) formed for each pixel arranged in two dimensions in the pixel array section (21) is arranged in a grid pattern and is configured as a grid structure. In other words, the structure (103) can also be called a grid structure.

[0037] As a color filter (141), for example, a color filter corresponding to the wavelengths of red (R), green (G), and blue (B) can be used. Additionally, as a color filter (141) formed at each pixel arranged in two dimensions in the pixel array section (21), a color filter corresponding to a Bayer array can be used. On the upper surface of the color filter (141), a flattening film (142) and an on-chip microlens (143) are laminated.

[0038] FIGS. 3 and 4 are drawings illustrating an example of a manufacturing method including a process for forming a structure shown in FIG. 2. In this manufacturing method, the process after the photoelectric conversion region (111) and the device isolation region (101) are formed on a silicon substrate is shown in the order of process steps. The same applies to the description of the manufacturing method below.

[0039] First, in the process shown in FIG. 3A, a four-layer structure is formed by stacking a first layer (121) to a fourth layer (124) on the upper surface of a silicon substrate having a photoelectric conversion region (111) and a device isolation region (101). In the process shown in FIG. 3B, a processing mask (311) having a predetermined pattern is formed on the stacked four-layer structure.

[0040] In the process shown in Fig. 3C, the unnecessary parts are removed by processing the parts according to the pattern of the processing mask (311), and a groove (105) is formed. The groove (105) penetrates the first layer (121) to the fourth layer (124), and its bottom surface reaches the upper part of the device isolation region (101). In the process shown in Fig. 3D, the processing mask (311) is peeled off.

[0041] In the process shown in E of FIG. 3, aluminum oxide (AlO₂), which is the material of the fifth layer (125) and the high refractive index film (132), x A film (125a) including the above is formed on four stacked layers using atomic layer deposition (ALD), etc. The film (125a) is also formed on the interior (side and bottom) of the groove (105). Subsequently, in the process shown in F of FIG. 4, a film (131a) including the material of a low refractive index film (131) is formed on the film (125a) to fill the groove (105).

[0042] In the process shown in G of FIG. 4, a processing mask (312) is formed on the film (131a). In the process shown in H of FIG. 4, unnecessary parts are removed by processing the parts according to the pattern of the processing mask (312), thereby forming a low-refractive-index film (131). The processing mask (312) is peeled off. Subsequently, in the process shown in I of FIG. 4, aluminum oxide (AlO₂), which is the material of the high-refractive-index film (132), xA film (132a) including ) etc. is formed on a portion of the low refractive index film (131) that is protruded as a projection using an atomic layer deposition method (ALD), etc.

[0043] Accordingly, a high-refractive-index film (132) is formed to surround the entire low-refractive-index film (131), thereby forming a structure (103). Additionally, an anti-reflection film (102) is formed by stacking the first layer (121) to the fifth layer (125). In a subsequent process, a color filter (141), a flattening film (142), and an on-chip microlens (143) are stacked sequentially on the anti-reflection film (102) (J in FIG. 4). By undergoing this process, the structure shown in FIG. 2 can be formed.

[0044] By having a structure as described above, the structure (103) is structured so that the high refractive index film (132) covers the entire low refractive index film (131). Therefore, light can be reflected with a higher reflection effect due to the difference between the refractive index of the material of the low refractive index film (131) and the refractive index of the material of the high refractive index film (132). Additionally, since the low refractive index film (131) is completely covered by the high refractive index film (132), there is a protective effect. Furthermore, since the structure (103) is formed by penetrating the anti-reflection film (102), color mixing can be suppressed.

[0045] (Example 2)

[0046] FIG. 5 is a drawing showing a second example of a structure including a pixel (100). In FIG. 5, parts corresponding to FIG. 2 are given the same reference numerals, and their descriptions are appropriately omitted. Also, in subsequent drawings, the descriptions of parts with the same reference numerals are appropriately omitted.

[0047] The structure shown in FIG. 5 is formed with a structure (103A) instead of a structure (103) compared to the structure shown in FIG. 2.

[0048] The structure (103A) is composed of a low refractive index film (131A) and a high refractive index film (132A) formed to surround the entire low refractive index film (131A). For example, as a material for the high refractive index film (132A), aluminum oxide (AlO₂) x ) is used, and as the material of the low refractive index film (131A), aluminum oxide (AlO) is used. x Materials with a refractive index lower than that of ) can be used.

[0049] The vertical structure of the structure (103A) is formed inside the groove (105A) along with the side of the color filter (141), just like the structure (103) (Fig. 2). The groove (105A) penetrates the anti-reflection film (102) and reaches the upper part of the device separation region (101), just like the groove (105) (Fig. 2).

[0050] Meanwhile, although the structure (103A) has a horizontal structure, the width of the groove (105A) becomes wider than the width of the groove (105) (Fig. 2), so that the width becomes wider than the width of the second region (113) of the device isolation region (101), resulting in a thicker structure. That is, the width of the structure (103A) is less than or equal to the width of the device isolation region (101) which includes the FFTI device isolation structure, and also greater than or equal to the width of the second region (113) formed by polysilicon (Poly-Si), etc.

[0051] As described above, in the structure shown in FIG. 2, the width of the structure (103) was less than or equal to the width of the second region (113) of the device separation region (101), but in the structure shown in FIG. 5, the width of the structure (103A) is less than or equal to the width of the device separation region (101) and greater than or equal to the width of the second region (113). By doing so, the structure (103) can be formed with an optimal width (thickness) in the pixel (100).

[0052] In addition, the manufacturing method including the process of forming the structure shown in Fig. 5 is the same as the manufacturing method of Figs. 3 and 4 described above, so the description thereof is omitted.

[0053] (Example 3)

[0054] FIG. 6 is a drawing showing a third example of a structure including a pixel (100).

[0055] The structure shown in FIG. 6 is formed with a structure (103B) instead of a structure (103) compared to the structure shown in FIG. 2.

[0056] The structure (103B) is composed of a low refractive index film (131B) and a high refractive index film (132B) formed to surround the entire low refractive index film (131B). The high refractive index film (132B) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131B). x It is formed from materials such as ).

[0057] The vertical structure of the structure (103B) is formed inside the groove (105B) along with the side of the color filter (141), just like the structure (103) (Fig. 2). The groove (105B) penetrates the anti-reflection film (102) and reaches the upper part of the device separation region (101), just like the groove (105) (Fig. 2).

[0058] Meanwhile, although the structure (103B) has a horizontal structure, the width of the groove (105B) becomes wider than the width of the groove (105A) (Fig. 5), so that the width becomes wider than the width of the device isolation region (101), resulting in a thicker structure. That is, the width of the structure (103B) becomes greater than the width of the device isolation region (101) which includes the FFTI device isolation structure.

[0059] As described above, in the structure shown in FIG. 2, the width of the structure (103) was less than or equal to the width of the second region (113) of the device separation region (101), but in the structure shown in FIG. 6, the width of the structure (103B) is made greater than or equal to the width of the device separation region (101). By doing so, the structure (103) can be formed in an optimal shape for the pixel (100).

[0060] In addition, the manufacturing method including the process of forming the structure shown in Fig. 6 is the same as the manufacturing method of Figs. 3 and 4 described above, so the description thereof is omitted.

[0061] (Example 4)

[0062] FIG. 7 is a drawing showing a fourth example of a structure including a pixel (100).

[0063] The structure shown in FIG. 7 is formed with a structure (103C) instead of a structure (103) compared to the structure shown in FIG. 2.

[0064] The structure (103C) is composed of a low refractive index film (131C) and a high refractive index film (132C) formed to surround the entire low refractive index film (131C). The high refractive index film (132C) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131C). x It is formed from materials such as ).

[0065] The vertical structure of the structure (103C) is formed along with the side of the color filter (141) and also within the groove (105C). The groove (105C), like the groove (105) (Fig. 2), penetrates the anti-reflection film (102) and reaches the upper part of the device separation region (101).

[0066] Meanwhile, although the structure (103C) has a horizontal structure, the upper part, which is the upper portion above the upper surface of the anti-reflection film (102), and the lower part, which is the inner portion of the groove (105C) penetrating the anti-reflection film (102), have different widths and form a two-stage structure. That is, the structure (103C) has a wider upper width than the lower width, so it becomes a thicker structure.

[0067] As described above, in the structure shown in FIG. 2, the width of the structure (103) is constant, but in the structure shown in FIG. 7, the width of the structure (103C) is not constant, and the upper width is made wider than the lower width. By making the structure like this, it is possible to accommodate the miniaturization of the device separation region (101) including the FFTI device separation structure in the pixel (100).

[0068] FIGS. 8 and 9 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 7.

[0069] In the process shown in FIGS. 8A to E, similar to the process shown in FIGS. 3A to E, after a groove (105C) is formed by processing a portion according to the pattern of the processing mask (311), aluminum oxide (AlO₂) is formed using an atomic layer deposition method (ALD), etc. x A film (125a) containing materials such as ) is formed.

[0070] Subsequently, in the process shown in F and G of FIG. 9, just like in the process shown in F and G of FIG. 4, aluminum oxide (AlO x A film (131a) containing a material with a lower refractive index than that of the structure (103C) is formed, and a processing mask (321) is formed on the film (131a). Here, the processing mask (321) has a pattern different from that of the processing mask (312) (Fig. 4) and has a shape to make the upper width of the structure (103C) wider than the lower width.

[0071] In the process shown in H of FIG. 9, a low-refractive-index film (131C) is formed by processing a portion according to the pattern of the processing mask (321). The low-refractive-index film (131C) formed in this way has an upper width that is wider than the lower width. The processing mask (321) is peeled off.

[0072] Furthermore, in the process shown in I of FIG. 9, aluminum oxide (AlO xA film (132a) including ) etc. is formed on the upper part (protruding part) of the low refractive index film (131C) using an atomic layer deposition method (ALD), etc. By doing so, the high refractive index film (132C) is formed to surround the entire low refractive index film (131C), thereby becoming a structure (103C). In addition, a non-reflective film (102) is formed by stacking the first layer (121) to the fifth layer (125).

[0073] In the subsequent process, a color filter (141), a flattening film (142), and an on-chip microlens (143) are stacked sequentially on the anti-reflection film (102) (J in FIG. 9). By going through this process, the structure shown in FIG. 7 can be formed.

[0074] (Example 5)

[0075] FIG. 10 is a drawing showing a fifth example of a structure including a pixel (100).

[0076] The structure shown in FIG. 10 has a structure (103D) formed instead of a structure (103) compared to the structure shown in FIG. 2.

[0077] The structure (103D) is composed of a low refractive index film (131D) and a high refractive index film (132D) formed to surround the entire low refractive index film (131D). The high refractive index film (132D) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131D). x It is formed from materials such as ).

[0078] The vertical structure of the structure (103D) is formed along with the side of the color filter (141) and also within the groove (105D). The groove (105D), like the groove (105) (Fig. 2), penetrates the anti-reflection film (102) and reaches the upper part of the device separation area (101).

[0079] Meanwhile, although the structure (103D) has a horizontal structure, it becomes a two-stage structure in which the width of the upper part and the width of the lower part are different. That is, the structure (103D) becomes a thinner structure as the width of the upper part is narrower than the width of the lower part.

[0080] As described above, in the structure shown in FIG. 2, the width of the structure (103) is constant, but in the structure shown in FIG. 10, the width of the structure (103D) is not constant, and the upper width is made narrower than the lower width. By making the structure like this, the aperture area in the photoelectric conversion region (111) in the pixel (100) is increased, and the sensitivity can be improved.

[0081] FIGS. 11 and 12 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 10.

[0082] In the process shown in A to E of FIG. 11, similar to the process shown in A to E of FIG. 3, a portion according to the pattern of the processing mask (311) is processed to form a groove (105D), and then a film (125a) is formed.

[0083] After that, in the process shown in F and G of FIG. 12, a film (131a) is formed in the same way as in the process shown in F and G of FIG. 4, and a processing mask (312) is formed on the film (131a). In the process shown in H and I of FIG. 12, after removing unnecessary parts by processing the parts according to the pattern of the processing mask (312), a low refractive index film (131D) is formed by making the film (131a) from which unnecessary parts have been removed thin by slimming (I of FIG. 12). The low refractive index film (131D) formed in this way has an upper width that is narrower than the lower width. The processing mask (312) is peeled off.

[0084] Furthermore, in the process shown in J of FIG. 12, a film (132a) is formed on the upper part (the part protruding in a protruding shape) of the low refractive index film (131D), similar to the process shown in I of FIG. 4. By doing so, the high refractive index film (132D) is formed to surround the entire low refractive index film (131D), thereby forming a structure (103D). Additionally, a non-reflective film (102) is formed by stacking the first layer (121) to the fifth layer (125).

[0085] In the subsequent process, a color filter (141), a flattening film (142), and an on-chip microlens (143) are stacked sequentially on the anti-reflection film (102) (K in FIG. 12). By going through this process, the structure shown in FIG. 10 can be formed.

[0086] (Example 6)

[0087] FIG. 13 is a drawing showing a sixth example of a structure including a pixel (100).

[0088] The structure shown in FIG. 13 is formed with a structure (103E) instead of a structure (103) compared to the structure shown in FIG. 2.

[0089] The structure (103E) is composed of a low refractive index film (131E) and a high refractive index film (132E) formed to surround the entire low refractive index film (131E). The high refractive index film (132E) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131E). x It is formed from materials such as ).

[0090] The vertical structure of the structure (103E) is formed along with the side of the color filter (141) and also within the groove (105E). The groove (105E) does not extend to the upper part (surface of the silicon substrate) of the device isolation region (101), and the first layer (121) of the anti-reflection film (102) formed on the bottom surface of the groove (105E) is formed as an integral structure with the high refractive index film (132E).

[0091] In the structure shown in FIG. 2, the structure (103) penetrates the anti-reflection film (102) and reaches the second region (113) of the device isolation region (101), but in the structure shown in FIG. 13, the structure (103E) is prevented from coming into contact with the second region (113) which includes polysilicon (Poly-Si), etc. By making the structure this way, the structure (103) does not come into contact with polysilicon (Poly-Si), etc., and since over-etching control is not required during manufacturing, there is an advantage that processing becomes easier.

[0092] FIGS. 14 and 15 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 13.

[0093] In the process shown in FIGS. A to E of 14, a groove (105E) is formed by processing a portion according to the pattern of the processing mask (311), similar to the process shown in FIGS. A to E of 3, but differs in that its depth is shallower than that of the groove (105) (Fig. C, D of 3). That is, in the process shown in FIGS. C and D of 14, unlike the process shown in FIGS. C and D of 3, a groove (105E) is formed that penetrates the third layer of the second layer (122) to the fourth layer (124) among the four layers forming the anti-reflection film (102). Then, a film (125a) is formed on the fourth layer (124) and on the side of the groove (105E).

[0094] In the process shown in F to J of FIG. 15, similar to the process shown in F to J of FIG. 4, after the film (131a) is formed, a low refractive index film (131E) is formed by processing a portion according to the pattern of the processing mask (312) (H of FIG. 15). Subsequently, after peeling off the processing mask (312), in the process shown in I of FIG. 15, a film (132a) is formed on the upper part (the portion protruding in a protruding shape) of the low refractive index film (131E).

[0095] Accordingly, the high refractive index film (132E) is formed to surround the entire low refractive index film (131E), thereby forming a structure (103E). Additionally, a reflection-preventing film (102) is formed by stacking the first layer (121) to the fifth layer (125). The structure (103E) does not penetrate the reflection-preventing film (102) and reach the upper part of the device isolation region (101) (that is to say, it stops at the reflection-preventing film (102)).

[0096] In the subsequent process, a color filter (141), a flattening film (142), and an on-chip microlens (143) are stacked sequentially on the anti-reflection film (102) (J in FIG. 15). By going through this process, the structure shown in FIG. 13 can be formed.

[0097] (Example 7)

[0098] FIG. 16 is a drawing showing a seventh example of a structure including a pixel (100).

[0099] The structure shown in FIG. 16 has a structure (103F) formed instead of a structure (103E) compared to the structure shown in FIG. 13.

[0100] The structure (103F) is composed of a low-refractive-index film (131F) and a high-refractive-index film (132F) formed to surround the entire low-refractive-index film (131F). The high-refractive-index film (132F) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low-refractive-index film (131F). x It is formed from materials such as ).

[0101] The vertical structure of the structure (103F) is formed in the interior of the groove (105F) along with the side of the color filter (141). The groove (105F), like the groove (105E) (Fig. 13), does not reach the upper part of the element separation region (101), and the first layer (121) of the anti-reflection film (102) formed on the bottom surface of the groove (105F) is formed in an integral structure with the high refractive index film (132F).

[0102] Meanwhile, although the structure (103F) has a horizontal structure, the upper part, which is the upper portion above the upper surface of the anti-reflection film (102), and the lower part, which is the inner portion of the groove (105F) penetrating the anti-reflection film (102), have different widths and form a two-stage structure. That is, the structure (103F) has a wider upper width than the lower width, so it becomes a thicker structure.

[0103] As described above, in the structure shown in FIG. 13, the width of the structure (103E) is constant, but in the structure shown in FIG. 16, the width of the structure (103F) is not constant, and the upper width is made wider than the lower width. By making the structure this way, the structure (103) does not come into contact with the second region (113), such as polysilicon (Poly-Si), and over-etching control is not required during manufacturing, so there is an advantage that processing becomes easier. In addition, the structure (103) can be formed in an optimal shape for the pixel (100).

[0104] (Example 8)

[0105] FIG. 17 is a drawing showing the eighth example of a structure including a pixel (100).

[0106] The structure shown in FIG. 17 has a structure (103G) formed instead of a structure (103E) compared to the structure shown in FIG. 13.

[0107] The structure (103G) is composed of a low refractive index film (131G) and a high refractive index film (132G) formed to surround the entire low refractive index film (131G). The high refractive index film (132G) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131G). x It is formed from materials such as ).

[0108] The vertical structure of the structure (103G) is formed in the interior of the groove (105G) along with the side of the color filter (141). The groove (105G), like the groove (105E) (Fig. 13), does not reach the upper part of the device separation region (101), and the first layer (121) of the anti-reflection film (102) formed on the bottom surface of the groove (105G) is formed in an integral structure with the high refractive index film (132G).

[0109] Meanwhile, although the structure (103G) has a horizontal structure, it becomes a two-stage structure in which the width of the upper part and the width of the lower part are different. That is, the structure (103G) becomes a thinner structure as the width of the upper part is narrower than the width of the lower part.

[0110] As described above, in the structure shown in FIG. 13, the width of the structure (103E) is constant, but in the structure shown in FIG. 17, the width of the structure (103G) is not constant, and the upper width is made narrower than the lower width. By making the structure this way, the structure (103) does not come into contact with the second region (113), such as polysilicon (Poly-Si), and since over-etching control is unnecessary during manufacturing, there is an advantage that processing becomes easier. In addition, in the pixel (100), the aperture area in the photoelectric conversion region (111) is increased, and sensitivity can be improved.

[0111] (Example 9)

[0112] FIG. 18 is a drawing showing a ninth example of a structure including a pixel (100).

[0113] The structure shown in FIG. 18 is formed with a structure (103H) instead of a structure (103) compared to the structure shown in FIG. 2.

[0114] The structure (103H) is composed of a low refractive index film (131H) and a high refractive index film (132H) formed to surround the entire low refractive index film (131H). The high refractive index film (132H) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (131H). xIt is formed from materials such as ).

[0115] The vertical structure of the structure (103H) is formed along with the side of the color filter (141) and also within the groove (105H). The groove (105H) penetrates only the upper three layers of the third layer (123) to the fifth layer (125) among the five layers of the anti-reflection film (102), and the lower surface of the structure (103H) is in contact with the upper surface of the second layer (122) (in other words, it is stopped at the second layer (122) of the anti-reflection film (102)).

[0116] In the structure shown in FIG. 2, the structure (103) penetrates the entire layer of the anti-reflection film (102) and reaches the second region (113) of the device isolation region (101), but in the structure shown in FIG. 18, the structure (103H) penetrates only the upper three layers of the anti-reflection film (102) and hafnium oxide (HfO x It is stopped at the second layer (122) including ) etc. By digging into the groove (105H) and burying the structure (103H), the color mixing performance can be improved. As the material of the second layer (122), hafnium oxide (HfO₂) having etch-resistant properties is used. x By using ), hafnium oxide (HfO₂) during manufacturing x ) can be used as a stopper film. By using the second layer (122) as an etching stopper in this way, manufacturing becomes easier.

[0117] FIGS. 19 and 20 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 18.

[0118] In the process shown in FIGS. 19A to E, a groove (105H) is formed by processing a portion according to the pattern of the processing mask (311), similar to the process shown in FIGS. 3A to E, but differs in that its depth is shallower than that of the groove (105) (Fig. 3C, D). That is, in the process shown in FIGS. 19C and D, unlike the process shown in FIGS. 3C and D, a groove (105H) is formed that penetrates two layers, the third layer (123) and the fourth layer (124), among the four layers forming the anti-reflection film (102). Then, a film (125a) is formed on the fourth layer (124) and inside the groove (105H) (side and bottom).

[0119] In the process shown in F to J of FIG. 20, similar to the process shown in F to J of FIG. 4, after the film (131a) is formed, a low refractive index film (131H) is formed by processing a portion according to the pattern of the processing mask (312) (H of FIG. 20). Subsequently, after peeling off the processing mask (312), in the process shown in I of FIG. 20, a film (132a) is formed on the upper part (the portion protruding in a protruding shape) of the low refractive index film (131H).

[0120] Accordingly, the high-refractive-index film (132H) is formed to surround the entire low-refractive-index film (131H), thereby forming a structure (103H). Additionally, a non-reflective film (102) is formed by stacking the first layer (121) to the fifth layer (125). The structure (103H) penetrates the three layers on the upper side of the non-reflective film (102), but hafnium oxide (HfO₂) x It is stopped at the second layer (122) including ) etc.

[0121] In the subsequent process, a color filter (141), a flattening film (142), and an on-chip microlens (143) are stacked sequentially on the anti-reflection film (102) (J in FIG. 20). By doing so, the structure shown in FIG. 18 can be formed.

[0122] (Example 10)

[0123] FIG. 21 is a drawing showing the 10th example of a structure including a pixel (100).

[0124] The structure shown in FIG. 21 has a structure (103I) formed instead of a structure (103H) compared to the structure shown in FIG. 18.

[0125] The structure (103I) is composed of a low-refractive-index film (131I) and a high-refractive-index film (132I) formed to surround the entire low-refractive-index film (131I). The high-refractive-index film (132I) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low-refractive-index film (131I). x It is formed from materials such as ).

[0126] The vertical structure of the structure (103I) is formed along with the side of the color filter (141) and also within the groove (105I). The groove (105I), like the groove (105H) (Fig. 18), penetrates only the upper three layers of the third layer (123) to the fifth layer (125) of the five layers of the anti-reflection film (102), and the hafnium oxide (HfO₂) x It is structured to be stopped at the second layer (122) including ) etc.

[0127] Meanwhile, although the structure (103I) has a horizontal structure, the upper part, which is the upper portion above the upper surface of the anti-reflection film (102), and the lower part, which is the inner portion of the groove (105H) penetrating only the third layer of the anti-reflection film (102), have different widths and form a two-stage structure. That is, the structure (103I) has a wider upper width than the lower width, making it a thicker structure.

[0128] As described above, in the structure shown in FIG. 18, the width of the structure (103H) is constant, but in the structure shown in FIG. 21, the width of the structure (103I) is not constant, and the upper width is made wider than the lower width. By making the structure this way, the structure (103) does not come into contact with the second region (113), such as polysilicon (Poly-Si), and over-etching control is not required during manufacturing, so there is an advantage that processing becomes easier. In addition, the structure (103) can be formed in an optimal shape for the pixel (100).

[0129] (Example 11)

[0130] FIG. 22 is a drawing showing the 11th example of a structure including a pixel (100).

[0131] The structure shown in FIG. 22 has a structure (103J) formed instead of a structure (103H) compared to the structure shown in FIG. 18.

[0132] The structure (103J) is composed of a low-refractive-index film (131J) and a high-refractive-index film (132J) formed to surround the entire low-refractive-index film (131J). The high-refractive-index film (132J) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low-refractive-index film (131J). x It is formed from materials such as ).

[0133] The vertical structure of the structure (103J) is formed along with the side of the color filter (141) and also within the groove (105J). The groove (105J), like the groove (105H) (Fig. 18), penetrates only the upper three layers of the third layer (123) to the fifth layer (125) of the five layers of the anti-reflection film (102), and the hafnium oxide (HfO₂) x It is structured to be stopped at the second layer (122) including ) etc.

[0134] Meanwhile, although the structure (103J) has a horizontal structure, it becomes a two-stage structure in which the width of the upper part and the width of the lower part are different. That is, the structure (103J) becomes a thinner structure as the width of the upper part is narrower than the width of the lower part.

[0135] As described above, in the structure shown in FIG. 18, the width of the structure (103H) is constant, but in the structure shown in FIG. 22, the width of the structure (103J) is not constant, and the upper width is made narrower than the lower width. By making the structure this way, the structure (103) does not come into contact with the second region (113), such as polysilicon (Poly-Si), and since over-etching control is unnecessary during manufacturing, there is an advantage that processing becomes easier. In addition, in the pixel (100), the aperture area in the photoelectric conversion region (111) is increased, and sensitivity can be improved.

[0136] (Key points of the present disclosure)

[0137] Finally, with reference to FIG. 23, the key points of the first embodiment will be explained.

[0138] As shown in A of FIG. 23, the structure (103) has a structure including a low refractive index film (131) and a high refractive index film (132), and can be structured to penetrate the five layers of the anti-reflection film (102) and extend over the device isolation region (101). The structure (103) is formed on the side of the color filter (141) and is formed in a grid shape when viewed in a planar view.

[0139] As shown in Fig. 23B, the structure (103) may be structured so as not to penetrate to the surface of the silicon substrate. Additionally, as shown in Fig. 23C, the structure (103) may be made of hafnium oxide (HfO₂). x It can be structured so as not to penetrate a part of the layer of the anti-reflection film (102), such as stopping at the second layer (122) including ) etc.

[0140] In the structure (103), since the high-refractive-index film (132) covers the entire low-refractive-index film (131), light (incident light) can be reflected with a higher reflection effect due to the difference between the refractive index of the material of the low-refractive-index film (131) and the refractive index of the material of the high-refractive-index film (132). For example, as the material of the high-refractive-index film (132), aluminum oxide (AlO₂) x You can use ).

[0141] As a structure (103), when a low-refractive-index film (131) is combined with a film of low refractive index such as silicon oxide (SiO2), there is a concern that the reflection effect may be reduced, but by adopting a structure in which a high-refractive-index film (132) covers the entire low-refractive-index film (131), the effect can be reduced. In addition, the low-refractive-index film (131) is covered entirely by the high-refractive-index film (132), thereby providing a protective effect.

[0142] As described above, in the solid-state imaging device (10), by providing a structure (103) as its structure, it becomes possible to suppress color mixing, increase the aperture area to improve sensitivity, or respond to the miniaturization of the element separation region (101), thereby obtaining sufficient sensor characteristics. As a result, sensor characteristics can be improved.

[0143] <2. Second Embodiment>

[0144] (Composition of pixels)

[0145] A structure comprising pixels (200) arranged in a two-dimensional manner in a pixel array portion (21) of a solid-state imaging device (10) is described.

[0146] (Example 1)

[0147] FIG. 24 is a drawing showing a first example of a structure including a pixel (200). FIG. 24A shows a cross-sectional structure. FIG. 24B shows a plan view when the cross-sectional structure of FIG. 24A is cut along the X-X' plane indicated by the dashed line in the drawing.

[0148] In A of FIG. 24, the pixel (200) has a photoelectric conversion region (211). For example, the photoelectric conversion region (211) is configured to include a semiconductor region of a second conductivity type in a well region of a first conductivity type formed on a silicon substrate. The first conductivity type can be p-type and the second conductivity type can be n-type.

[0149] The photoelectric conversion region (211) is electrically and optically separated by the device isolation region (201). The device isolation region (201) is formed to surround the photoelectric conversion region (211). The device isolation region (201) includes a device isolation structure that is FFTI and has a structure including a first region (212) and a second region (213) formed in a groove (trench). For example, silicon oxide (SiO2) is used as the material for the first region (212). For example, polysilicon (Poly-Si) is used as the material for the second region (213).

[0150] On the upper surface of the silicon substrate forming the photoelectric conversion region (211), a reflection-preventing film (202) is formed. The reflection-preventing film (202) is formed by stacking the first layer (221) to the fifth layer (225).

[0151] As the material of the first layer (221), aluminum oxide (AlO₂) x ) is used. As the material for the second layer (222), for example, hafnium oxide (HfO₂) is used. x ) is used. As the material for the third layer (223), for example, silicon oxide (SiO2) is used. As the material for the fourth layer (224), for example, hafnium oxide (HfO2) is used. x ) is used. As the material for the fifth layer (225), for example, aluminum oxide (AlO₂) is used. x ) is used. Also, the number of layers of the anti-reflection film (202) is not limited to 5 layers and may be other layers.

[0152] A color filter (241) is formed on the upper surface of the anti-reflection film (202). On the side of the color filter (241), a structure (203) is formed having a structure including a low refractive index film (231), a high refractive index film (232), and an insulating film (251). The structure (203) is formed to surround the color filter (241) and can function as a light-blocking film between pixels. In the structure (203), the high refractive index film (232) is formed to cover a portion of the low refractive index film (231).

[0153] The low refractive index film (231) is formed from a material with a lower refractive index than the high refractive index film (232). The high refractive index film (232) is formed from a material with a higher refractive index than the low refractive index film (231). For example, as a material for the high refractive index film (232), aluminum oxide (AlO₂) x ) is used, and as the material of the low refractive index film (231), aluminum oxide (AlO) x Materials with a refractive index lower than that of ) can be used.

[0154] Although the structure (203) is a vertical structure, it is formed not only on the side of the color filter (241) but also in the groove (205) that penetrates the anti-reflection film (202) and reaches the upper part of the element separation area (201). An insulating film (251) is formed on the side and bottom of the groove (205). A low refractive index film (231) is embedded inside the groove (205) which is covered on the side and bottom by the insulating film (251). That is, in the structure (203), the insulating film (251) is formed to cover the remaining part of the low refractive index film (231).

[0155] The insulating film (251) is a conductor such as polysilicon (Poly-Si) which is the material of the second region (213), and aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202). x ) or hafnium oxide (HfO xIt is formed to insulate a high dielectric constant film such as ). As the material of the insulating film (251), silicon oxide (SiO2) can be used, for example, but SiCN film, SiCO film, SiCON film, SiBN film, etc. may also be used.

[0156] As shown in the plan view of Fig. 24B, the structure (203) has a structure in which a low-refractive-index film (231) covered by a high-refractive-index film (232) and an insulating film (251) surrounds a color filter (241), and each pixel formed on a silicon substrate has the same structure. That is, the structure (203) formed for each pixel arranged in two dimensions in the pixel array portion (21) is arranged in a grid pattern and is configured as a grid structure. In other words, the structure (203) can also be called a grid structure.

[0157] As a color filter (241), for example, a color filter corresponding to the wavelengths of red (R), green (G), and blue (B) can be used. Additionally, as a color filter (241) formed on each pixel arranged in a two-dimensional manner in the pixel array section (21), a color filter corresponding to a Bayer array can be used. On the upper surface of the color filter (241), a flattening film (242) and an on-chip microlens (243) are laminated.

[0158] FIGS. 25 and 26 are drawings illustrating an example of a manufacturing method including a process for forming the structure shown in FIG. 24. In this manufacturing method, the process after the photoelectric conversion region (211) and the device isolation region (201) are formed on a silicon substrate is shown in the order of process steps. The same applies to the description of the manufacturing method below.

[0159] First, in the process shown in A of FIG. 25, a four-layer structure is formed by stacking a first layer (221) to a fourth layer (224) on the upper surface of a silicon substrate having a photoelectric conversion region (211) and a device isolation region (201). In the process shown in B of FIG. 25, a processing mask (411) having a predetermined pattern is formed on the stacked four-layer structure.

[0160] In the process shown in Fig. 25 C, unnecessary parts are removed by processing the parts according to the pattern of the processing mask (411), and a groove (205) is formed. The groove (205) penetrates the first layer (221) to the fourth layer (224), and its bottom surface reaches the upper part of the device isolation region (201). In the process shown in Fig. 25 D, the processing mask (411) is peeled off.

[0161] In the process shown in E of FIG. 25, a film (251a) containing silicon oxide (SiO2), which is the material of the insulating film (251), is formed. In the process shown in F of FIG. 25, a sacrificial film (421) is formed to fill the groove (205). Subsequently, as shown in G and H of FIG. 26, after Chemical Mechanical Polishing (CMP) flattening is performed, the sacrificial film (421) is peeled off, thereby forming an insulating film (251) inside the groove (205) (side and bottom surfaces).

[0162] In the process shown in I of FIG. 26, a film (231a) containing a material of a low refractive index film (231) is formed. Although the detailed process is omitted here, in the same manner as G and H of FIG. 4 described above, a processing mask is formed on the film (231a), a portion according to the pattern of the processing mask is processed, and the processing mask is peeled off to form the low refractive index film (231) (J of FIG. 26). In the process shown in K of FIG. 26, a film (225a) containing a fifth layer (225) and a material of a high refractive index film (232) is formed.

[0163] Accordingly, in the low refractive index film (231), the portion (lower part) filled in the groove (205) is covered by the insulating film (251), and the portion (upper part) protruding in a protruding shape from the anti-reflection film (202) is covered by the high refractive index film (232), thereby forming a structure (203). Additionally, an anti-reflection film (202) is formed by stacking the first layer (221) to the fifth layer (225). In the subsequent process, a color filter (241), a flattening film (242), and an on-chip microlens (243) are stacked sequentially on the anti-reflection film (202) (L in FIG. 26). By going through this process, the structure shown in FIG. 24 can be formed.

[0164] By having the above structure, a conductor such as polysilicon (Poly-Si) is formed as the second region (213) of the device isolation region (201), and even when a potential is applied, the insulating film (251) prevents the conductor and the aluminum oxide (AlO₂) which is the material of each layer of the anti-reflection film (202) from being separated. x ) or hafnium oxide (HfO x High dielectric constant films such as ) can be insulated. Dielectric films are prone to leakage, and leakage current can be reduced by insulating and protecting them. In addition, by reducing leakage current, power consumption during standby can be reduced.

[0165] (Example 2)

[0166] FIG. 27 is a drawing showing a second example of a structure including a pixel (200). In FIG. 27, parts corresponding to FIG. 24 are given the same reference numerals, and their descriptions are appropriately omitted. In addition, in subsequent drawings, the descriptions of parts with the same reference numerals are also appropriately omitted.

[0167] The structure shown in FIG. 27 has a structure (203A) formed instead of a structure (203) compared to the structure shown in FIG. 24.

[0168] The structure (203A) has a structure comprising a low refractive index film (231A), a high refractive index film (232A), and an insulating film (251A). The high refractive index film (232A) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231A). x It is formed from materials such as ). The insulating film (251A) is formed from materials such as silicon oxide (SiO2).

[0169] The longitudinal structure of the structure (203A) is such that the longitudinal length of the insulating film (251A) formed in the groove (205A) is shorter than the longitudinal length of the insulating film (251) (Fig. 24). Although the insulating film (251A) has a shorter longitudinal length compared to the insulating film (251) (Fig. 24), the conductive material such as polysilicon (Poly-Si) which is the material of the second region (213) and the aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0170] In this way, as long as the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it does not matter if the longitudinal length of the insulating film (251) is shortened. Even in a structure where the longitudinal length of the insulating film (251) is shortened, the insulation resistance can be improved and the leakage current can be reduced. In addition, the power consumption during standby can be reduced.

[0171] A manufacturing method including a process for forming the structure shown in FIG. 27 is a method of manufacturing in FIG. 25 and FIG. 26 in which a sacrificial film (421) is formed (F in FIG. 25), and after CMP planarization is performed, the film (251a) is further processed by etching or the like. By undergoing this process, an insulating film (251A) with a short longitudinal length can be formed on the side of the groove (205A).

[0172] (Example 3)

[0173] FIG. 28 is a drawing showing a third example of a structure including a pixel (200).

[0174] The structure shown in FIG. 28 has a structure (203B) formed instead of a structure (203) compared to the structure shown in FIG. 24.

[0175] The structure (203B) has a structure comprising a low refractive index film (231B), a high refractive index film (232B), and an insulating film (251B). The high refractive index film (232B) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231B). x It is formed from materials such as ). The insulating film (251B) is formed from materials such as silicon oxide (SiO2).

[0176] In the structure (203B), the insulating film (251B) formed in the groove (205B) is formed only on the side and not on the bottom. Although the insulating film (251B) is formed only on the side of the groove (205B) compared to the insulating film (251) (Fig. 24), the conductive material such as polysilicon (Poly-Si), which is the material of the second region (213), and the aluminum oxide (AlO), which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0177] In this way, if the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is not necessary to form the insulating film (251) on the bottom surface of the groove (205). Even in a structure where the insulating film (251) is formed only on the side of the groove (205), the insulation resistance can be improved and the leakage current can be reduced. In addition, power consumption during standby can be reduced.

[0178] FIGS. 29 and FIGS. 30 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 28.

[0179] In FIG. 29 A to E, similar to FIG. 25 A to E, a groove (205B) is formed by processing a portion according to the pattern of the processing mask (411), and then a film (251a) containing the material of the insulating film (251B) is formed.

[0180] In the process shown in F of FIG. 30, processing is performed by RIE (Reactive Ion Etching) so that only the film (251a) formed on the side of the groove (205B) remains. By doing so, an insulating film (251B) can be formed.

[0181] In G to J of FIG. 30, a low refractive index film (231B) is formed by forming and processing a film (231a) as in I to L of FIG. 26 (H of FIG. 30). Additionally, a fifth layer (225) and a high refractive index film (232B) are formed by forming a film (225a) (I of FIG. 30). By doing so, a structure (203B) is formed. Then, a color filter (241), a flattening film (242), and an on-chip microlens (243) are stacked sequentially on the anti-reflection film (202) (J of FIG. 30). By going through this process, the structure shown in FIG. 28 can be formed.

[0182] (Example 4)

[0183] FIG. 31 is a drawing showing a fourth example of a structure including a pixel (200).

[0184] The structure shown in FIG. 31 has a structure (203C) formed instead of a structure (203B) compared to the structure shown in FIG. 28.

[0185] The structure (203C) has a structure comprising a low refractive index film (231C), a high refractive index film (232C), and an insulating film (251C). The high refractive index film (232C) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231C). x It is formed from materials such as ). The insulating film (251C) is formed from materials such as silicon oxide (SiO2).

[0186] The longitudinal structure of the structure (203C) is such that the longitudinal length of the insulating film (251C) formed in the groove (205C) is shorter than the longitudinal length of the insulating film (251B) (Fig. 28). Although the insulating film (251C) has a shorter longitudinal length compared to the insulating film (251B) (Fig. 28), the conductive material such as polysilicon (Poly-Si) which is the material of the second region (213) and the aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0187] In this way, if the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is not necessary to form the insulating film (251) on the bottom surface of the groove (205), and it is also acceptable to shorten the longitudinal length of the insulating film (251). Even in a structure where the insulating film (251) is formed only on the side of the groove (205) and the longitudinal length is shortened, the insulation resistance can be improved and leakage current can be reduced. In addition, power consumption during standby can be reduced.

[0188] A manufacturing method including a process for forming a structure shown in FIG. 31 can be further processed by etching, etc., when processing by RIE so that the film (251a) formed on the side of the groove (205) remains in the manufacturing method of FIG. 29 and FIG. 30 (F of FIG. 30). By undergoing this process, an insulating film (251C) with a short longitudinal length can be formed on the side of the groove (205C).

[0189] (Example 5)

[0190] FIG. 32 is a drawing showing a fifth example of a structure including a pixel (200).

[0191] The configuration shown in FIG. 32 is formed such that, compared to the structure shown in FIG. 24, a structure (203D) is formed instead of a structure (203).

[0192] The structure (203D) has a structure comprising a low refractive index film (231D), a high refractive index film (232D), an insulating film (251D), and a conductive film (252D). The high refractive index film (232D) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231D). x It is formed from materials such as ). The insulating film (251D) is formed from materials such as silicon oxide (SiO2).

[0193] For example, titanium-based compounds can be used as the material for the conductive film (252D). Examples of titanium-based compound films include TiN films, TiSiN films, TiBN films, etc. Also, in the following description, if there is no need to distinguish the conductive film by structure, it will be referred to as a conductive film (252).

[0194] In the structure (203D), the insulating film (251D) formed in the groove (205D) is formed only on the side and not on the bottom. A conductive film (252D) is formed on the bottom of the groove (205D). Although the insulating film (251D) is formed only on the side of the groove (205D) and the conductive film (252D) is formed on the bottom, the conductive material such as polysilicon (Poly-Si), which is the material of the second region (213), and the aluminum oxide (AlO), which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0195] In this way, as long as the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is acceptable to form a conductive film (252) on the bottom surface of the groove (205). Even in a structure where the insulating film (251) is formed only on the side of the groove (205) and the conductive film (252) is formed on the bottom surface of the groove (205), the insulation resistance can be improved and leakage current can be reduced. Additionally, power consumption during standby can be reduced.

[0196] FIGS. 33 and FIGS. 34 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 32.

[0197] In the process shown in A to E of FIG. 33, similar to the process shown in A to E of FIG. 25, a groove (205D) is formed by processing a portion according to the pattern of the processing mask (411), and then a film (251a) containing the material of the insulating film (251D) is formed.

[0198] In the process shown in F of FIG. 33, processing is performed by RIE, similar to the process shown in F of FIG. 30, so that only the film (251a) formed on the side of the groove (205D) remains. By doing so, an insulating film (251D) can be formed.

[0199] In the process shown in G of FIG. 34, CMP planarization is performed after the film (252a) containing the material of the conductive film (252D) is formed. In the process shown in H of FIG. 34, the conductive film (252D) is formed on the bottom surface of the groove (205D) by processing the film (252a) embedded in the groove (205D) by etching or the like.

[0200] In the process shown in I to K of FIG. 34, a low refractive index film (231D) is formed by forming and processing a film (231a) in the same manner as in the process shown in I to L of FIG. 26 (I of FIG. 34). Additionally, a fifth layer (225) and a high refractive index film (232D) are formed by forming a film (225a) (J of FIG. 34). Then, a color filter (241), a flattening film (242), and an on-chip microlens (243) are sequentially stacked on the anti-reflection film (202) (K of FIG. 34). By undergoing these processes, the structure shown in FIG. 32 can be formed.

[0201] (Example 6)

[0202] FIG. 35 is a drawing showing a sixth example of a structure including a pixel (200).

[0203] The structure shown in FIG. 35 has a structure (203E) formed instead of a structure (203D) compared to the structure shown in FIG. 32.

[0204] The structure (203E) has a structure comprising a low refractive index film (231E), a high refractive index film (232E), an insulating film (251E), and a conductive film (252E). The high refractive index film (232E) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231E). x It is formed from materials such as silicon oxide (SiO2). The insulating film (251E) is formed from materials such as silicon oxide (SiO2). The conductive film (252E) is formed from materials such as titanium-based compounds.

[0205] The longitudinal structure of the structure (203E) is such that the longitudinal length of the insulating film (251E) formed in the groove (205E) is shorter than the longitudinal length of the insulating film (251D) (Fig. 32). Although the insulating film (251E) has a shorter longitudinal length compared to the insulating film (251D) (Fig. 32), the conductive material such as polysilicon (Poly-Si) which is the material of the second region (213) and the aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0206] In this way, if the dielectric can be insulated by forming an insulating film (251E) between the conductor and the dielectric film, it is acceptable to form a conductive film (252) on the bottom surface of the groove (205) and shorten the longitudinal length of the insulating film (251) on the side surface of the groove (205). Even in a structure where the insulating film (251) is formed only on the side surface of the groove (205) and the conductive film (252) is formed on the bottom surface, and the longitudinal length of the insulating film (251) is shortened, the insulation resistance can be improved and leakage current can be reduced. Additionally, power consumption during standby can be reduced.

[0207] A manufacturing method including a process for forming a structure shown in FIG. 35 is a method of manufacturing in FIG. 33 and FIG. 34 such that when processing by RIE so that the film (251a) formed on the side of the groove (205) remains, the film (251a) can be further processed by etching, etc. (F of FIG. 33). By undergoing this process, an insulating film (251E) with a short longitudinal length can be formed on the side of the groove (205E).

[0208] (Example 7)

[0209] FIG. 36 is a drawing showing a seventh example of a structure including a pixel (200).

[0210] The structure shown in FIG. 36 is formed with a structure (203F) instead of a structure (203) compared to the structure shown in FIG. 24.

[0211] The structure (203F) has a structure comprising a low refractive index film (231F), a high refractive index film (232F), an insulating film (251F), and a conductive film (252F). The high refractive index film (232F) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231F). x It is formed from materials such as silicon oxide (SiO2). The insulating film (251F) is formed from materials such as silicon oxide (SiO2). The conductive film (252F) is formed from materials such as titanium-based compounds.

[0212] In the structure (203F), an insulating film (251F) is formed on the side and bottom surfaces of the groove (205F), and a conductive film (252F) is formed on the insulating film (251F) formed on the bottom surface. That is, in the groove (205F), the lower layer of the conductive film (252F) is covered by the insulating film (251F), and the structure is configured to protect the bottom and side surfaces of the groove (205F) by the insulating film (251F).

[0213] Along with forming an insulating film (251F) on the side of the groove (205F), an insulating film (251F) and a conductive film (252F) are formed on the bottom surface of the groove (205F), but a conductor such as polysilicon (Poly-Si) which is the material of the second region (213) and aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0214] In this way, as long as the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is acceptable to form an insulating film (251) and a conductor film (252) on the bottom surface of the groove (205). Even in a structure where the insulating film (251) is formed on the side of the groove (205) and the insulating film (251) and the conductor film (252) are laminated on the bottom surface of the groove (205), the insulation resistance can be improved and leakage current can be reduced. In addition, power consumption during standby can be reduced.

[0215] FIGS. 37 to 39 are drawings illustrating examples of a manufacturing method including a process for forming a structure shown in FIG. 36.

[0216] In the process shown in FIGS. 37 A to E, similar to the process shown in FIGS. 25 A to E, a portion according to the pattern of the processing mask (411) is processed to form a groove (205F), and then a film (251a) is formed. In the process shown in FIGS. 38 F to H, similar to the process shown in FIGS. 25 F to FIGS. 26 H, a sacrificial film (421) is formed and CMP planarization is performed, and an insulating film (251F) is formed by peeling off the sacrificial film (421).

[0217] In the process shown in I of FIG. 38, CMP planarization is performed after the film (252a) containing the material of the conductive film (252F) is formed. In the process shown in J of FIG. 38, the conductive film (252F) is formed on the insulating film (251F) formed on the bottom surface of the groove (205F) by processing the film (252a) embedded in the groove (205F) by etching or the like.

[0218] In the process shown in K to N of FIG. 39, a low refractive index film (231F) is formed by forming and processing a film (231a) in the same manner as in the process shown in I to L of FIG. 26 (L of FIG. 39). Additionally, a fifth layer (225) and a high refractive index film (232F) are formed by forming a film (225a) (M of FIG. 39). Then, a color filter (241), a flattening film (242), and an on-chip microlens (243) are stacked sequentially on the anti-reflection film (202) (N of FIG. 39). By undergoing these processes, the structure shown in FIG. 36 can be formed.

[0219] (Example 8)

[0220] FIG. 40 is a drawing showing the eighth example of a structure including a pixel (200).

[0221] The structure shown in FIG. 40 has a structure (203G) formed instead of a structure (203F) compared to the structure shown in FIG. 36.

[0222] The structure (203G) has a structure comprising a low refractive index film (231G), a high refractive index film (232G), an insulating film (251G), and a conductive film (252G). The high refractive index film (232G) is made of a material (aluminum oxide (AlO₂)) that has a higher refractive index than the low refractive index film (231G). x It is formed from materials such as silicon oxide (SiO2). The insulating film (251G) is formed from materials such as silicon oxide (SiO2). The conductive film (252G) is formed from materials such as titanium-based compounds.

[0223] The longitudinal structure of the structure (203G) is such that the longitudinal length of the insulating film (251G) formed in the groove (205G) is shorter than the longitudinal length of the insulating film (251F) (Fig. 36). Although the insulating film (251G) has a shorter longitudinal length compared to the insulating film (251F) (Fig. 36), the conductive material such as polysilicon (Poly-Si) which is the material of the second region (213) and the aluminum oxide (AlO) which is the material of each layer of the anti-reflection film (202) x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ).

[0224] In this way, if the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is acceptable to form an insulating film (251) and a conductor film (252) on the bottom surface of the groove (205) and to shorten the longitudinal length of the insulating film (251) on the side surface of the groove (205). Even in a structure where the insulating film (251) is formed on the side surface and bottom surface of the groove (205), and the insulating film (251) and the conductor film (252) are laminated on the bottom surface and the longitudinal length of the insulating film (251) formed on the side surface is shortened, the insulation resistance can be improved and the leakage current can be reduced. Additionally, the power consumption during standby can be reduced.

[0225] A manufacturing method comprising a process for forming a structure shown in FIG. 40 is a method of manufacturing according to FIG. 37 to 39, wherein when CMP planarization is performed by forming a sacrificial film (421) so that the film (251a) formed in the groove (205F) remains, the film (251a) may be further processed by etching or the like. By undergoing such a process, an insulating film (251G) with a short longitudinal length can be formed on the side of the groove (205G).

[0226] (Key points of the present disclosure)

[0227] Finally, with reference to FIGS. 41 and FIGS. 42, the key points of the second embodiment will be explained.

[0228] As shown in A of FIG. 41, the structure (203) has a structure including a low refractive index film (231), a high refractive index film (232), and an insulating film (251), and the insulating film (251) has a structure that insulates the conductor of the device isolation region (201) and the dielectric included in the anti-reflection film (202). The structure (203) is formed on the side of the color filter (241) and is formed in a grid shape when viewed in a planar view.

[0229] As shown in Fig. 41B, the structure (203) may further have a conductive film (252), and may be structured such that an insulating film (251) is formed on the side of the groove (205) and a conductive film (252) is formed on the bottom surface of the groove (205). Additionally, as shown in Fig. 41C, it may be structured such that an insulating film (251) is formed on the side and bottom surfaces of the groove (205) and a conductive film (252) is formed on the bottom surface of the groove (205).

[0230] By having this structure, a conductor such as polysilicon (Poly-Si) is formed as the second region (213) of the device isolation region (201), and even when a potential is applied, the insulating film (251) prevents the conductor and the aluminum oxide (AlO₂) which is the material of each layer of the anti-reflection film (202) from being separated. x ) or hafnium oxide (HfO x It is possible to insulate high dielectric constant films such as ). By doing so, insulation resistance can be improved and leakage current can be reduced. In addition, power consumption during standby can be reduced.

[0231] In addition, if the dielectric can be insulated by forming an insulating film (251) between the conductor and the dielectric film, it is acceptable to adopt a structure in which the lower surface of the structure (203) matches the lower surface of the anti-reflection film (202), as shown in A to C of FIG. 42.

[0232] As described above, in the solid-state imaging device (10), by providing a structure (203) as its structure, it becomes possible to, for example, improve insulation resistance and reduce leakage current, thereby obtaining sufficient sensor characteristics. As a result, sensor characteristics can be improved.

[0233] <3. Variation Example>

[0234] In the above description, a CMOS-type solid-state imaging device was described as the solid-state imaging device (10), but the CMOS-type solid-state imaging device may be a back-illumination type structure in which light is incident from the upper layer (back side) opposite to the wiring layer side (surface side) formed on the lower layer when viewed from the silicon substrate on which the photodiode as the photoelectric conversion region is formed. In addition, the CMOS-type solid-state imaging device may be a surface-illumination type structure in which the side to which light is incident is the wiring layer side (surface side).

[0235] The solid-state imaging device (10) is an example of a light detection device to which the present disclosure is applied. That is, the light detection device to which the present disclosure is applied is not limited to the solid-state imaging device (10) and can be applied to a light detection device such as a distance sensor using an IR laser, for example. In addition, the configuration of the structure to which the present disclosure is applied is not limited to a CMOS-type solid-state imaging device and can also be applied to a CCD (Charge Coupled Device)-type solid-state imaging device.

[0236] In the above description, the first conductivity type is configured as p-type and the second conductivity type as n-type in the solid imaging device (10), but it does not matter if the n-type is the first conductivity type and the p-type is the second conductivity type. Also, in the above description, the solid imaging device (10) is configured to use a primary color filter corresponding to the wavelengths of red (R), green (G), and blue (B) as a color filter (141) or color filter (241), but it does not matter if a complementary color filter corresponding to the wavelengths of cyan (C), magenta (M), and yellow (Y) is used.

[0237] (Composition of electronic devices)

[0238] A light detection device applying the present disclosure can be mounted on electronic devices such as smartphones, tablet terminals, mobile phones, digital still cameras, and digital video cameras. FIG. 43 is a drawing showing an example configuration of an electronic device equipped with a light detection device applying the present disclosure.

[0239] In FIG. 43, the electronic device (1000) has an optical system (1011) including a lens group, a light detection element (1012) having a function corresponding to the solid-state imaging device (10) of FIG. 1, and an imaging system including a Digital Signal Processor (DSP) (1013) which is a camera signal processing unit. In addition to the imaging system, the electronic device (1000) is configured such that a Central Processing Unit (CPU) (1010), a frame memory (1014), a display (1015), an operating system (1016), an auxiliary memory (1017), a communication I / F (1018), and a power system (1019) are connected to each other via a bus (1020).

[0240] The CPU (1010) controls the operation of each part of the electronic device (1000).

[0241] The optical system (1011) introduces incident light (image light) from a subject and forms an image on the light detection surface of the light detection element (1012). The light detection element (1012) converts the amount of incident light formed on the light detection surface by the optical system (1011) into an electrical signal on a pixel-by-pixel basis and outputs it as a pixel signal. The DSP (1013) performs a predetermined signal processing on the signal output from the light detection element (1012).

[0242] The frame memory (1014) temporarily records image data of a still image or a moving image captured by the imaging system. The display (1015) is a liquid crystal display or an organic EL display and displays a still image or a moving image captured by the imaging system. The control system (1016) issues operation commands regarding various functions of the electronic device (1000) according to operation by the user.

[0243] The auxiliary memory (1017) is a storage medium including semiconductor memory such as flash memory, and records still image or moving image data captured by an imaging device. The communication I / F (1018) has a communication module corresponding to a predetermined communication method and transmits the still image or moving image data captured by the imaging device to another device through a network.

[0244] The power supply system (1019) supplies various types of power that serve as operating power to the CPU (1010), DSP (1013), frame memory (1014), display (1015), control system (1016), auxiliary memory (1017), and communication I / F (1018).

[0245] Furthermore, the embodiments of the present disclosure are not limited to the embodiments described above, and various modifications are possible within the scope of not departing from the gist of the present disclosure.

[0246] The effects described in this specification are merely examples and are not limited thereto, and other effects may also be present. Furthermore, in this specification, when indicating the positional relationship of each part projected onto a plane parallel to the surface of a silicon substrate (semiconductor substrate), the expression "viewed in a plane" is used. Additionally, when indicating the positional relationship of each part projected onto a plane perpendicular to the surface of a silicon substrate (semiconductor substrate), the expression "viewed in a cross-section" is used.

[0247] In addition, the present disclosure may have the following configuration.

[0248] (1)

[0249] Each has a plurality of pixels having a photoelectric conversion region, and

[0250] A structure having a first film comprising a first material and a second film comprising a second material different from the first material, formed in a grid shape when viewed in a planar manner on a semiconductor substrate having the above-mentioned photoelectric conversion region,

[0251] Light detection device.

[0252] (2)

[0253] The first film is a low-refractive-index film in which the first material has a predetermined refractive index.

[0254] The light detection device described in (1) above.

[0255] (3)

[0256] The second film is a high-refractive-index film in which the second material has a higher refractive index than the first material.

[0257] The light detection device described in (1) or (2) above.

[0258] (4)

[0259] The second material mentioned above is aluminum oxide (AlO₂). x )person

[0260] The light detection device described in (3) above.

[0261] (5)

[0262] The above structure has a structure that extends across a device isolation region formed on the semiconductor substrate when viewed in cross-section.

[0263] A light detection device described in any one of (1) to (4) above.

[0264] (6)

[0265] The above structure has a structure that is thinner than the device isolation region when viewed in cross-section.

[0266] The light detection device described in (5) above.

[0267] (7)

[0268] The above structure has a structure that is thinner than the region formed inside the device isolation region when viewed in cross-section.

[0269] The light detection device described in (5).

[0270] (8)

[0271] The above structure has a structure that is thicker than the device isolation region when viewed in cross-section.

[0272] The light detection device described in (5) above.

[0273] (9)

[0274] The above structure has a two-stage structure in which the upper and lower sections have different thicknesses when viewed in cross-section.

[0275] The light detection device described in (5) above.

[0276] (10)

[0277] The upper part has a structure that is thicker than the lower part.

[0278] The light detection device described in (9) above.

[0279] (11)

[0280] The upper part has a structure that is thinner than the lower part.

[0281] The light detection device described in (9) above.

[0282] (12)

[0283] The above structure has a structure that does not penetrate the semiconductor substrate when viewed in cross-section.

[0284] A light detection device described in any one of (1) to (4) above.

[0285] (13)

[0286] The above structure has a two-stage structure in which the upper and lower sections have different thicknesses when viewed in cross-section.

[0287] The light detection device described in (12) above.

[0288] (14)

[0289] The upper part has a structure that is thicker than the lower part.

[0290] The light detection device described in (13) above.

[0291] (15)

[0292] The upper part has a structure that is thinner than the lower part.

[0293] The light detection device described in (13) above.

[0294] (16)

[0295] The above structure has a structure that, when viewed in cross-section, does not penetrate a part of the layer of the anti-reflection film formed on the semiconductor substrate.

[0296] A light detection device described in any one of (1) to (4) above.

[0297] (17)

[0298] The above structure has a two-stage structure in which the upper and lower sections have different thicknesses when viewed in cross-section.

[0299] The light detection device described in (16) above.

[0300] (18)

[0301] The upper part has a structure that is thicker than the lower part.

[0302] The light detection device described in (17) above.

[0303] (19)

[0304] The upper part has a structure that is thinner than the lower part.

[0305] The light detection device described in (17) above.

[0306] (20)

[0307] The second film is formed to cover the entire first film, and

[0308] The above structure is,

[0309] Formed on the side of the color filter,

[0310] Regarding the above color filter, when viewed in a planar view, it is formed in a grid shape.

[0311] A light detection device described in any one of (1) to (19) above.

[0312] (21)

[0313] Each has a plurality of pixels having a photoelectric conversion region, and

[0314] A structure having a first film comprising a first material and a second film comprising a second material different from the first material, formed in a grid shape when viewed in a planar manner on a semiconductor substrate having the above-mentioned photoelectric conversion region,

[0315] An electronic device equipped with a light detection device.

[0316] (22)

[0317] Each has a plurality of pixels having a photoelectric conversion region, and

[0318] A conductor is formed in a device isolation region formed on the semiconductor substrate forming the above photoelectric conversion region, and a potential is applied thereto.

[0319] A structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material, formed in a grid shape when viewed in a planar manner on the semiconductor substrate.

[0320] Light detection device.

[0321] (23)

[0322] The first film is a low-refractive-index film in which the first material has a predetermined refractive index, and

[0323] The second film is a high-refractive-index film in which the second material has a higher refractive index than the first material, and

[0324] The above third film is an insulating film.

[0325] The light detection device described in (22) above.

[0326] (24)

[0327] The second material mentioned above is aluminum oxide (AlO₂). x )person

[0328] The light detection device described in (23) above.

[0329] (25)

[0330] The above third material is silicon oxide (SiO2).

[0331] The light detection device described in (23) or (24) above.

[0332] (26)

[0333] The above structure has a structure that insulates the conductor of the device isolation region and the dielectric included in the anti-reflection film formed on the semiconductor substrate by the third film.

[0334] A light detection device described in any one of (22) to (25) above.

[0335] (27)

[0336] The above third membrane is formed on the side and bottom surfaces of the groove where the first membrane is formed, when viewed in cross-section.

[0337] The light detection device described in (26) above.

[0338] (28)

[0339] The third membrane is formed on the side of the groove where the first membrane is formed, when viewed in cross-section.

[0340] The light detection device described in (26) above.

[0341] (29)

[0342] The above structure further has a fourth film comprising the first material, the second material, and the third material and a fourth material different from the first material.

[0343] A light detection device described in any one of (22) to (26) above.

[0344] (30)

[0345] The above-mentioned fourth membrane is a conductive membrane.

[0346] The light detection device described in (29) above.

[0347] (31)

[0348] The above-mentioned fourth material is a titanium-based compound.

[0349] The light detection device described in (30) above.

[0350] (32)

[0351] The third membrane is formed on the side of the groove where the first membrane is formed, when viewed in cross-section, and

[0352] The above-mentioned fourth membrane is formed on the bottom surface of the groove.

[0353] A light detection device described in any one of (29) to (31) above.

[0354] (33)

[0355] The third membrane is formed on the side and bottom surfaces of the groove where the first membrane is formed, when viewed in cross-section, and

[0356] The above fourth membrane is formed on the bottom surface of the groove.

[0357] A light detection device described in any one of (29) to (31) above.

[0358] (34)

[0359] The second film is formed to cover a portion of the first film, and

[0360] The above structure is,

[0361] Formed on the side of the color filter,

[0362] Regarding the above color filter, when viewed in a planar view, it is formed in a grid shape.

[0363] A light detection device described in any one of (22) to (33) above.

[0364] (35)

[0365] Each has a plurality of pixels having a photoelectric conversion region, and

[0366] A conductor is formed in a device isolation region formed on the semiconductor substrate forming the above photoelectric conversion region, and a potential is applied thereto.

[0367] A structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material, formed in a grid shape when viewed in a planar manner on the semiconductor substrate.

[0368] An electronic device equipped with a light detection device. Explanation of the symbols

[0369] 10: Solid-state imaging device 21: Pixel array section 22: Vertical drive unit 23: Column signal processing unit 24: Horizontal drive unit 25: Output section 26: Control unit 100: Pixels 101: Device isolation area 102: Anti-reflective coating 103: Structure 105: Home 111: Photoelectric conversion region 112: First Zone 113: Second Zone 121: 1st floor 122: 2nd floor 123: 3rd floor 124: 4th floor 125: 5th floor 131: Low refractive index film 132: High refractive index film 141: Color Filter 142: Leveling film 143: On-chip microlenses 200: Pixels 201: Device isolation area 202: Anti-reflective coating 203: Structure 205: Home 211: Photoelectric conversion region 212: First Zone 213: Second Zone 221: 1st floor 222: 2nd floor 223: 3rd floor 224: 4th floor 225: 5th floor 231: Low refractive index film 232: High refractive index film 241: Color Filter 242: Leveling film 243: On-chip microlenses 251: Insulating film 252: Conductive membrane 1000: Electronic devices 1012: Photodetector

Claims

Claim 1 A structure is formed in a grid shape when viewed in a planar manner on a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion region, and having a first film comprising a first material and a second film comprising a second material different from the first material, wherein the second material is aluminum oxide (AlO₂). x A light detection device in which the second film is formed to cover the entire first film. Claim 2 In claim 1, the first film is a low-refractive-index film phosphorescent device in which the first material has a predetermined refractive index. Claim 3 In paragraph 2, the second film is a high-refractive-index film phosphorescent detection device in which the second material has a higher refractive index than the first material. Claim 4 delete Claim 5 In claim 1, the structure is a light detection device having a structure that extends across a device isolation region formed on the semiconductor substrate when viewed in cross-section. Claim 6 In claim 5, the above structure is a light detection device having a structure thinner than the element isolation region when viewed in cross-section. Claim 7 In paragraph 5, the above structure is a light detection device having a structure thinner than the region formed inside the element isolation region when viewed in cross-section. Claim 8 In claim 5, the above structure is a light detection device having a structure that is thicker than the element isolation region when viewed in cross-section. Claim 9 In claim 5, the above structure is a light detection device having a two-stage structure in which the thickness of the upper and lower parts differs when viewed in cross-section. Claim 10 In claim 9, the light detection device having a structure in which the upper part is thicker than the lower part. Claim 11 In claim 9, the light detection device having a structure in which the upper part is thinner than the lower part. Claim 12 In claim 1, the structure is a light detection device having a structure that does not penetrate the semiconductor substrate when viewed in cross-section. Claim 13 In claim 12, the above structure is a light detection device having a two-stage structure in which the upper and lower thicknesses are different when viewed in cross-section. Claim 14 In paragraph 13, the light detection device having a structure in which the upper part is thicker than the lower part. Claim 15 In Clause 13, the light detection device having a structure in which the upper part is thinner than the lower part. Claim 16 A light detection device according to claim 1, wherein the structure has a structure that does not penetrate a portion of the layer of the anti-reflection film formed on the semiconductor substrate when viewed in cross-section. Claim 17 In claim 16, the above structure is a light detection device having a two-stage structure in which the upper and lower sections have different thicknesses when viewed in cross-section. Claim 18 In claim 17, the light detection device having a structure in which the upper part is thicker than the lower part. Claim 19 In claim 17, the light detection device having a structure in which the upper part is thinner than the lower part. Claim 20 A light detection device according to claim 1, wherein the structure is formed on the side of a color filter and, when viewed in a planar manner with respect to the color filter, is formed in a grid shape. Claim 21 A structure is formed in a grid shape when viewed in a planar manner on a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion region, and having a first film comprising a first material and a second film comprising a second material different from the first material, wherein the second material is aluminum oxide (AlO₂). x An electronic device equipped with a light detection device, wherein the second film is formed to cover the entire first film. Claim 22 A plurality of pixels, each having a photoelectric conversion region, and a conductor formed in a device isolation region formed on a semiconductor substrate forming the photoelectric conversion region, wherein a potential is applied thereto, and on the semiconductor substrate, a structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material is formed in a grid shape when viewed in a planar manner, wherein the second material is aluminum oxide (AlO₂). x A light detection device in which the second film is formed to cover the entire first film. Claim 23 In paragraph 22, the first film is a low-refractive-index film in which the first material has a predetermined refractive index, the second film is a high-refractive-index film in which the second material has a higher refractive index than the first material, and the third film is an insulating film phosphorescent detection device. Claim 24 delete Claim 25 In paragraph 23, the third material is a silicon oxide (SiO2) phosphorescent detection device. Claim 26 In claim 22, the above structure is a light detection device having a structure that insulates the conductor of the device isolation region and the dielectric included in the anti-reflection film formed on the semiconductor substrate by the third film. Claim 27 In claim 26, the above-mentioned third film is a light detection device formed on the side and bottom surfaces of the groove where the above-mentioned first film is formed, viewed in cross-section. Claim 28 In claim 26, the above-mentioned third film is a light detection device formed on the side of the groove where the above-mentioned first film is formed, viewed in cross-section. Claim 29 In claim 26, the above structure is a light detection device further comprising a fourth film including the first material, the second material, and the third material and a fourth material different from the first material. Claim 30 In claim 29, the above-mentioned fourth film is a conductive film phosphorescent detection device. Claim 31 In paragraph 30, the above-mentioned fourth material is a titanium-based compound phosphorescent detection device. Claim 32 A light detection device according to claim 29, wherein the third film is formed on the side of the groove where the first film is formed when viewed in cross-section, and the fourth film is formed on the bottom surface of the groove. Claim 33 A light detection device according to claim 29, wherein the third film is formed on the side and bottom surface of the groove where the first film is formed when viewed in cross-section, and the fourth film is formed on the bottom surface of the groove. Claim 34 In claim 22, the above structure is formed on the side of a color filter and is formed in a grid shape when viewed in a planar manner with respect to the color filter. Claim 35 A plurality of pixels, each having a photoelectric conversion region, and a conductor formed in a device isolation region formed on a semiconductor substrate forming the photoelectric conversion region, wherein a potential is applied thereto, and on the semiconductor substrate, a structure having a first film comprising a first material, a second film comprising a second material different from the first material, and a third film comprising a third material different from the first material and the second material is formed in a grid shape when viewed in a planar manner, wherein the second material is aluminum oxide (AlO₂). x An electronic device equipped with a light detection device, wherein the second film is formed to cover the entire first film.

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