Ink composition for light emitting device, light emitting device manufactured using same and electronic apparatus comprising same

Abstract

Quantum dots; and a mixed solvent of a first solvent, a second solvent, and a third solvent; comprising, The first solvent is a C6-C50 aromatic hydrocarbon, and The second solvent is a C1-C20 aliphatic hydrocarbon, and An ink composition for a light-emitting device, wherein the third solvent is a tertiary alkyl phosphine and / or a tertiary alkyl amine.

Description

Technology Field

[0001] The invention relates to an ink composition for a light-emitting element, a light-emitting element manufactured using the same, and an electronic device including the same. Background Technology

[0002] Quantum dots are nanocrystals of semiconductor materials that exhibit a quantum confinement effect. When a quantum dot receives light from an excitation source and reaches an energy-excited state, it emits energy corresponding to its own energy band gap. At this time, since the wavelength varies depending on the particle size even for the same material, light in a desired wavelength range can be obtained by controlling the size of the quantum dot. Because it can exhibit characteristics such as excellent color purity and high luminous efficiency, it can be applied to various devices.

[0003] Quantum dots enable the realization of various colors and exhibit excellent luminescence characteristics by controlling particle size through the quantum confinement effect. The problem to be solved

[0004] The invention provides an ink composition, etc., used in the light-emitting layer of a light-emitting device with improved efficiency. means of solving the problem

[0005] According to one aspect,

[0006] Quantum dots; and a mixed solvent of a first solvent, a second solvent, and a third solvent; comprising,

[0007] The above first solvent is C6-C 50 It is an aromatic hydrocarbon, and

[0008] The above second solvent is C1-C 20 It is an aliphatic hydrocarbon, and

[0009] An ink composition for a light-emitting device is provided, wherein the third solvent is a tertiary alkyl phosphine and / or a tertiary alkyl amine.

[0010] According to another aspect of work,

[0011] First electrode;

[0012] A second electrode facing the first electrode;

[0013] An intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer; comprising

[0014] A light-emitting device is provided, wherein the light-emitting layer comprises the quantum dot-containing complex.

[0015] According to another aspect of work,

[0016] An electronic device comprising the above quantum dot-containing complex is provided. Effects of the invention

[0017] A light-emitting device manufactured using an ink composition according to one embodiment has excellent efficiency. Brief explanation of the drawing

[0018] FIG. 1 is a diagram schematically showing the structure of a light-emitting element according to one embodiment. FIG. 2 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. FIG. 3 is a cross-sectional view of a light-emitting device according to another embodiment of the present invention. Specific details for implementing the invention

[0019] Quantum dots synthesized via solution processes are dispersed in a colloidal form. Generally, long-chain organic compounds such as oleic acid, myristic acid, and stearic acid are used as surfactants in quantum dot synthesis and act as ligands that passivate the quantum dots.

[0020] In this case, the mechanism by which colloidal dispersibility is maintained is steric stabilization. Since nanoparticle aggregation occurs when the distance between particles becomes too close, this technique involves adsorbing polymeric materials capable of imparting steric repulsion to the surface of the dispersed particles to prevent them from approaching each other to a distance where dispersion forces act strongly, thereby preventing aggregation.

[0021] In conventional quantum dots, long-chain organic ligands play a role in imparting steric repulsion, and therefore, non-polar organic solvents are used as dispersion solvents.

[0022] Since the binding between the quantum dot shell and the organic ligand is in a state of dynamic equilibrium, unbound organic ligands contribute to the stabilization of the quantum dot. Meanwhile, the wide bandgap of organic ligands used for quantum dot surface stabilization, such as alkyl chain ligands, can act as a barrier to charge injection. On the other hand, if there are many unbound organic ligands, it can interfere with electromobility and degrade properties.

[0023] In the case of quantum dot forms of light-emitting devices, it is advantageous to remove them; however, during this process, ligands bound to the surface are removed, creating surface defect sites that act as electron traps in the device, leading to a problem of degraded device performance.

[0024] The surface of the quantum dot shell is composed of metals and / or chalcogenides.

[0025] The ligands used in quantum dots are primarily in the form of long-chain fatty acids, and these fatty acid-type ligands are bound to the metal portions on the surface of the quantum dots.

[0026] Surface defects in quantum dots often occur in the chalcogenide portions of the surface, leading to a degradation of properties.

[0028] An ink composition for a light-emitting device according to one aspect is

[0029] It may include quantum dots; and a mixed solvent of a first solvent, a second solvent, and a third solvent.

[0030] The above first solvent is C6-C 50 It is an aromatic hydrocarbon, and

[0031] The above second solvent is C1-C 20 It is an aliphatic hydrocarbon, and

[0032] The third solvent may be a tertiary alkyl phosphine and / or a tertiary alkyl amine.

[0033] The above aliphatic hydrocarbon may be, for example, a saturated or unsaturated aliphatic hydrocarbon. For example, the above aliphatic hydrocarbon may be a branched or linear alkyl group compound.

[0034] The above aromatic hydrocarbon may be, for example, an aryl compound.

[0035] In the above tertiary alkyl phosphine and / or tertiary alkyl amine, the alkyl is, for example, C1-C 20 It may be an alkyl group. The alkyl is, for example, a C6-C 20 It may be an alkyl group. The tertiary alkyl phosphine is one in which three alkyl groups are bonded to P, and the tertiary alkyl amine is one in which three alkyl groups are bonded to N, and the three alkyl groups may be the same or different from each other.

[0036] The above third solvent can improve the characteristics of the light-emitting device by healing defect sites of quantum dots.

[0037] According to one embodiment, the boiling point of the third solvent may be greater than 220°C to 500°C. When considering the viscosity, drying, and content of the third solvent in the ink composition for the light-emitting element, it is preferable that the boiling point be within the above range.

[0038] According to one embodiment, the first solvent may include toluene, xylene, ethylbenzene, diethylbenzene, mesitylene, propylbenzene, cyclohexylbenzene, dimethoxybenzene, anisole, ethoxytoluene, phenoxytoluene, isopropylbiphenyl, dimethylanisole, propylanisole, 1-ethylnaphthalene, 2-ethylnaphthalene, 2-ethylbiphenyl, octylbenzene, or any combination thereof.

[0039] According to one embodiment, the second solvent may include n-octane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n-pentadecane, n-hexadecane, 2-methylheptane, 3-methylheptane, 4-methylheptane, 2,2-dimethylhexane, 2,3-dimethylhexane, 2,4-dimethylhexane, 2,5-dimethylhexane, 3,3-dimethylhexane, 3-ethylhexane, 2,2,4-trimethylpentane, 2-methyloctane, 2-methylnonane, 2-methyldecane, 2-methylundecane, 2-methyldodecane, 2-methyltridecane, or any combination thereof.

[0040] According to one embodiment, the third solvent may include tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tripropylamine, tributylamine, trihexylamine, triheptylamine, trioctylamine, or any combination thereof.

[0041] According to one embodiment, the second solvent may be 20 to 70 volume% based on 100 volume% of the first solvent.

[0042] According to one embodiment, the third solvent may be 1 to 20 volume% based on 100 volume% of the first solvent.

[0043] When the ratio of the first solvent, the second solvent, and the third solvent is within the above range, there is no difficulty in forming a light-emitting layer by performing a solution process with the ink composition for a light-emitting device according to one embodiment of the present invention.

[0044] Quantum dots are spherical semiconductor nanomaterials having a size of several to several hundred nanometers, and may include a core composed of a material with a small band gap and a shell arranged to surround the core.

[0045] According to one embodiment, the quantum dot may have a core-shell structure comprising a core including a semiconductor compound; and a shell including an oxide of a metal, metalloid or nonmetal, a semiconductor compound, or a combination thereof.

[0046] The above-mentioned semiconductor compounds, metals, metalloids, or nonmetal oxides will be described later.

[0047] According to one embodiment, the viscosity of the composition (@25℃) may be 2 to 10 cP.

[0048] According to one embodiment, the surface tension of the composition may be 20 to 40 dyne / cm.

[0049] According to one embodiment, the vapor pressure of the composition is 10 -2 It may be less than mmHg.

[0050] When the viscosity, surface tension, and vapor pressure are within the above ranges, it may be possible to form a layer using a solution process, for example, spin coating or inkjet, with the ink composition according to one embodiment of the present invention.

[0051] [Explanation of Fig. 1]

[0052] FIG. 1 schematically illustrates a cross-sectional view of a light-emitting element (10) according to one embodiment of the present invention. The light-emitting element (10) includes a first electrode (110), an intermediate layer (130), and a second electrode (150).

[0053] Hereinafter, the structure and manufacturing method of a light-emitting element (10) according to one embodiment of the present invention are described as follows with reference to FIG. 1.

[0054] [First electrode (110)]

[0055] A substrate may be additionally disposed on the lower part of the first electrode (110) of FIG. 1 or on the upper part of the second electrode (150). As the substrate, a glass substrate or a plastic substrate may be used. Alternatively, the substrate may be a flexible substrate and may include a plastic with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphtalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0056] The first electrode (110) can be formed, for example, by providing a material for the first electrode on the substrate using a deposition method or a sputtering method. When the first electrode (110) is an anode, a material with a high work function that facilitates hole injection can be used as the material for the first electrode.

[0057] The first electrode (110) may be a reflective electrode, a semi-transparent electrode, or a transparent electrode. To form the first electrode (110) which is a transparent electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof may be used as the material for the first electrode. Alternatively, to form the first electrode (110) which is a semi-transparent electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as the material for the first electrode.

[0058] The first electrode (110) may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. For example, the first electrode (110) may have a three-layer structure of ITO / Ag / ITO.

[0059] [Middle layer (130)]

[0060] An intermediate layer (130) is disposed on the upper portion of the first electrode (110). The intermediate layer (130) includes a light-emitting layer.

[0061] The above intermediate layer (130) may further include a hole transport region disposed between the first electrode (110) and the light-emitting layer and an electron transport region disposed between the light-emitting layer and the second electrode (150).

[0062] The above intermediate layer (130) may further include, in addition to various organic materials, metal-containing compounds such as organometallic compounds, inorganic materials such as quantum dots, etc.

[0063] Meanwhile, the intermediate layer (130) may include i) two or more emitting units sequentially stacked between the first electrode (110) and the second electrode (150), and ii) a charge generation layer disposed between the two emitting units. When the intermediate layer (130) includes the emitting units and charge generation layer as described above, the emitting element (10) may be a tandem emitting element.

[0064] [Middle layer (130) with a fixed transport area]

[0065] The hole transport region may have i) a monolayer structure consisting of a single layer made of a single material, ii) a monolayer structure consisting of a single layer containing multiple different materials, or iii) a multilayer structure including multiple layers containing multiple different materials.

[0066] The hole transport region above may include a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof.

[0067] For example, the hole transport region may have a multilayer structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / light-emitting auxiliary layer, a hole injection layer / light-emitting auxiliary layer, a hole transport layer / light-emitting auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer stacked sequentially from the first electrode (110).

[0068] The hole transport region may include a compound represented by the following chemical formula 201, a compound represented by the following chemical formula 202, or any combination thereof:

[0069] <Chemical Formula 201>

[0070]

[0071] <Chemical Formula 202>

[0072]

[0073] Among the above chemical formulas 201 and 202,

[0074] L 201 to L 204 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0075] L 205 은, *-O-*', *-S-*', *-N(Q 201 )-*', at least one R 10a C1-C substituted or unsubstituted 20 alkylene group, at least one R 10a C2-C substituted or unsubstituted 20 alkenylene group, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0076] xa1 to xa4 are independently one of integers 0 to 5, and

[0077] xa5 is one of integers from 1 to 10, and

[0078] R 201 to R 204 and Q 201 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0079] R 201 and R 202is optionally a single bond, at least one R 10a A C1-C5 alkylene group substituted or unsubstituted with or at least one R 10a Connected to each other through C2-C5 alkenylene groups substituted or unsubstituted, at least one R 10a C8-C substituted or unsubstituted 60 It can form polycyclic groups (e.g., carbazole groups, etc.) (e.g., refer to the following compound HT16, etc.),

[0080] R 203 and R 204 is optionally a single bond, at least one R 10a A C1-C5 alkylene group substituted or unsubstituted with or at least one R 10a Connected to each other through C2-C5 alkenylene groups substituted or unsubstituted, at least one R 10a C8-C substituted or unsubstituted 60 It can form polycyclic groups, and

[0081] na1 can be one of integers from 1 to 4.

[0082] For example, each of the above chemical formulas 201 and 202 may include at least one of the group represented by the following chemical formulas CY201 to CY217:

[0083]

[0084] Among the above chemical formulas CY201 to CY217, R 10b and R 10c Descriptions of each of R in this specification 10a Refer to the explanation for, and ring CY 201 Inner ring CY 204 are independently of each other, C3-C 20 Carbocyclic group or C1-C 20It is a heterocyclic group, and at least one hydrogen of the chemical formulas CY201 to CY217 is R as described in this specification. 10a It can be substituted or unsubstituted.

[0085] According to one embodiment, among the chemical formulas CY201 to CY217, the ring CY 201 Inner ring CY 204 It can be a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group independently of each other.

[0086] According to another embodiment, each of the above formulas 201 and 202 may include at least one of the group represented by the formulas CY201 to CY203.

[0087] According to another embodiment, the formula 201 may each include at least one of the group represented by formulas CY201 to CY203 and at least one of the group represented by formulas CY204 to CY217.

[0088] According to another embodiment, xa1 in the above chemical formula 201 is 1, and R 201 is a group represented by one of the above chemical formulas CY201 to CY203, xa2 is 0, and R 202 may be a group represented by one of the above chemical formulas CY204 to CY207.

[0089] According to another embodiment, each of the above formulas 201 and 202 may not include the group represented by the above formulas CY201 to CY203.

[0090] According to another embodiment, each of the above formulas 201 and 202 may not include the group represented by formulas CY201 to CY203 and may include at least one of the group represented by formulas CY204 to CY217.

[0091] As another example, each of the above chemical formulas 201 and 202 may not include the group represented by the above chemical formulas CY201 to CY217.

[0092] For example, the hole transport region is one of the following compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB(NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated-NPB, TAPC, HMTPD, TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), Pani / DBSA (Polyaniline / Dodecylbenzenesulfonic acid), PEDOT / PSS (Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), Pani / CSA (Polyaniline / Camphor sulfonic acid It may include (polyaniline / campersulfonic acid)), PANI / PSS (polyaniline / poly(4-styrenesulfonate)), or any combination thereof:

[0093]

[0094]

[0095]

[0096]

[0097]

[0098]

[0099]

[0100]

[0101]

[0102]

[0103] The thickness of the hole transport region may be about 50 Å to about 10,000 Å, for example, about 100 Å to about 4,000 Å. If the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer satisfy the ranges described above, satisfactory hole transport characteristics can be obtained without a substantial increase in driving voltage.

[0104] The above-mentioned light-emitting auxiliary layer is a layer that increases light emission efficiency by compensating for the optical resonance distance according to the wavelength of light emitted from the light-emitting layer, and the above-mentioned electron blocking layer is a layer that prevents electron leakage from the hole transport region of the light-emitting layer. A material that can be included in the aforementioned hole transport region may be included in the light-emitting auxiliary layer and the electron blocking layer.

[0105] [p-dopant]

[0106] In addition to the material described above, the hole transport region may include a charge-generating material to improve conductivity. The charge-generating material may be uniformly or non-uniformly dispersed within the hole transport region (e.g., in the form of a single layer consisting of the charge-generating material).

[0107] The above charge-generating material may be, for example, a p-dopant.

[0108] For example, the LUMO energy level of the above p-dopant may be -3.5 eV or less.

[0109] According to one embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, an element EL1 and an element EL2-containing compound, or any combination thereof.

[0110] Examples of the above quinone derivatives may include TCNQ, F4-TCNQ, etc.

[0111] Examples of the above cyano group-containing compounds may include HAT-CN, compounds represented by the following chemical formula 221, etc.

[0112]

[0113] <Chemical Formula 221>

[0114]

[0115] Of the above chemical formula 221,

[0116] R 221 to R 223 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0117] The above R 221 to R 223 At least one of which is independently substituted with a cyano group; -F; -Cl; -Br; -I; a cyano group, -F, -Cl, -Br, -I, or any combination thereof C1-C 20 C3-C substituted with an alkyl group; or any combination thereof. 60 Carbocyclic group or C1-C 60 It can be a heterocyclic group.

[0118] Among the above-mentioned compounds containing elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0119] Examples of the above metals are alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); Transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); etc. may be included.

[0120] Examples of the above metalloids may include silicon (Si), antimony (Sb), tellurium (Te), etc.

[0121] Examples of the above nonmetals may include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0122] For example, the above-mentioned element EL1 and element EL2-containing compounds may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metal tellurides, or any combination thereof.

[0123] Examples of the above metal oxides may include tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxide (e.g., ReO3, etc.).

[0124] Examples of the above metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, etc.

[0125] Examples of the above alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0126] Examples of the above alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0127] Examples of the above transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), and tungsten. Halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.),It may include silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0128] Examples of the above-mentioned transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.

[0129] Examples of the above lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3SmCl3, YbBr, YbBr2, YbBr3SmBr3, YbI, YbI2, YbI3, SmI3, etc.

[0130] Examples of the metalloid halides mentioned above may include antimony halides (e.g., SbCl5, etc.).

[0131] Examples of the above metal tellurides include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, It may include TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.

[0132] [Emitting layer in the middle layer (130)]

[0133] When the light-emitting element (10) is a full-color light-emitting element, the light-emitting layer may be patterned into a red light-emitting layer, a green light-emitting layer, and / or a blue light-emitting layer for each individual subpixel. Alternatively, the light-emitting layer may have a structure in which two or more layers among the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer are stacked in contact or spaced apart, or may have a structure in which two or more materials among the red light-emitting material, the green light-emitting material, and the blue light-emitting material are mixed without layer separation, thereby emitting white light.

[0134] The above-described light-emitting layer may include the quantum dots described above.

[0135] The thickness of the light-emitting layer may be about 100 Å to about 1000 Å, for example, about 200 Å to about 600 Å. When the thickness of the light-emitting layer satisfies the range described above, excellent light-emitting characteristics can be exhibited without a substantial increase in driving voltage.

[0136] [Quantum Dot]

[0137] The above-mentioned light-emitting layer may include quantum dots.

[0138] In this specification, a quantum dot refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal.

[0139] The diameter of the above quantum dots may be, for example, about 1 nm to 10 nm.

[0140] The above quantum dots can be synthesized by a wet chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, or a similar process.

[0141] The above wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent and a precursor material. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals and controls the growth of the crystals. Therefore, the growth of quantum dot particles can be controlled through a process that is easier and lower cost than vapor deposition methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).

[0142] The above quantum dots may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.

[0143] Examples of the above-mentioned group II-VI semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; It may include four-element compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.

[0144] Examples of the above III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. Meanwhile, the above III-V semiconductor compounds may further include a group II element. Examples of III-V semiconductor compounds containing additional group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0145] Examples of the above-mentioned group III-VI semiconductor compounds include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; InGaS 3 It may include ternary compounds such as InGaSe3, etc.; or any combination thereof.

[0146] Examples of the above-mentioned group I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.; or any combination thereof.

[0147] Examples of the above-mentioned group IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0148] The above Group IV elements or compounds may include single-element compounds such as Si, Ge, etc.; dual-element compounds such as SiC, SiGe, etc.; or any combination thereof.

[0149] Each element included in the multi-element compounds, such as the above-mentioned binary compounds, ternary compounds, and quaternary compounds, may exist within the particle at a uniform or non-uniform concentration.

[0150] Meanwhile, the above quantum dot may have a single structure in which the concentration of each element contained in the quantum dot is uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell may be different from each other.

[0151] The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

[0152] Examples of the shell of the above quantum dot include oxides of metals, metalloids, or nonmetals, semiconductor compounds, or combinations thereof. Examples of the oxides of metals, metalloids, or nonmetals may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; or any combination thereof. Examples of the above semiconductor compounds may include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; or any combination thereof, as described in this specification. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0153] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0154] In addition, the shape of the quantum dots can specifically be spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate-like particles, etc.

[0155] By controlling the size of the quantum dots, the energy band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Additionally, the size of the quantum dots can be configured to emit white light by combining light of various colors.

[0156] [Electronic transport region in the middle layer (130)]

[0157] The electron transport region may have i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a plurality of different materials, or iii) a multilayer structure including a plurality of layers containing a plurality of different materials.

[0158] The above electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0159] For example, the electron transport region may have a structure such as an electron transport layer / electron injection layer or a hole blocking layer / electron transport layer / electron injection layer stacked sequentially from the light-emitting layer.

[0160] The electron transport region (e.g., a hole blocking layer or electron transport layer among the electron transport regions) comprises at least one π electron-deficient nitrogen-containing C1-C 60 cyclic group (π electron-deficient nitrogen-containing C1-C 60 It may include metal-free compounds containing a cyclic group.

[0161] For example, the electron transport region may include a compound represented by the following chemical formula 601.

[0162] <Chemical Formula 601>

[0163] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0164] Among the above chemical formula 601,

[0165] Ar 601 , and L 601 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group, and

[0166] xe11 is 1, 2, or 3, and

[0167] xe1 is 0, 1, 2, 3, 4, or 5, and

[0168] R 601 is, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group, at least one R 10a C1-C substituted or unsubstituted 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O)2(Q 601 ), or -P(=O)(Q 601 )(Q 602 ) and,

[0169] Above Q 601 to Q 603 For descriptions regarding each, refer to the description of Q1 in this specification, and

[0170] xe21 is 1, 2, 3, 4, or 5, and

[0171] The above

[0172] Ar601 , L 601 and R 601 At least one of them is independent of each other, at least one R 10a π electron-deficient nitrogenous C1-C substituted or unsubstituted 60 It could be a click group.

[0173] For example, if xe11 in the above chemical formula 601 is 2 or more, then 2 or more Ar 601 They can be connected to each other through a single bond.

[0174] As another example, Ar in the above chemical formula 601 601 It may be a substituted or unsubstituted anthracene group.

[0175] As another example, the electron transport region may include a compound represented by the following chemical formula 601-1:

[0176] <Chemical Formula 601-1>

[0177]

[0178] In the above chemical formula 601-1,

[0179] X 614 is N or C(R 614 ) and, X 615 is N or C(R 615 ) and, X 616 is N or C(R 616 ) and, X 614 To X 616 At least one of them is N, and

[0180] L 611 to L 613 The explanation for each of the above L 601 Refer to the explanation for,

[0181] For descriptions of xe611 to xe613, refer to the description of xe1 above, and

[0182] R 611 to R 613 The explanation for each of the above R 601Refer to the explanation for,

[0183] R 614 to R 616 They are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl group, C1-C 20 Alkoxy group, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group, or at least one R 10a C1-C substituted or unsubstituted 60 It can be a heterocyclic group.

[0184] For example, xe1 and xe611 to xe613 in the above chemical formulas 601 and 601-1 may be 0, 1, or 2 independently of each other.

[0185] The electron transport region may comprise one of the following compounds ET1 to ET45, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0186]

[0187]

[0188]

[0189]

[0190]

[0191]

[0192]

[0193] The thickness of the electron transport region may be about 100 Å to about 5000 Å, for example, about 160 Å to about 4000 Å. If the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer or the electron transport layer may be, independently of each other, about 20 Å to about 1000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be about 100 Å to about 1000 Å, for example, about 150 Å to about 500 Å. If the thickness of the hole blocking layer and / or the electron transport layer satisfies the ranges described above, satisfactory electron transport characteristics can be obtained without a substantial increase in driving voltage.

[0194] The above electron transport region (e.g., the electron transport layer among the electron transport regions) may further include a metal-containing material in addition to the material described above.

[0195] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ions of the alkali metal complex may be Li ions, Na ions, K ions, Rb ions, or Cs ions, and the metal ions of the alkaline earth metal complex may be Be ions, Mg ions, Ca ions, Sr ions, or Ba ions. The ligands coordinated to the metal ions of the alkali metal complex and the alkaline earth metal complex may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0196] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, the following compounds ET-D1 (LiQ) or ET-D2:

[0197]

[0198] The above electron transport region may include an electron injection layer that facilitates electron injection from the second electrode (150). The electron injection layer may be in direct contact with the second electrode (150).

[0199] The electron injection layer may have i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a plurality of different materials, or iii) a multilayer structure having a plurality of layers containing a plurality of different materials.

[0200] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0201] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0202] The alkali metal-containing compound, alkaline earth metal-containing compound and the rare earth metal-containing compound may include oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), tellurides, or any combination thereof of the alkali metal, alkaline earth metal, and rare earth metal, respectively.

[0203] The above alkali metal-containing compound may include alkali metal oxides such as Li2O, Cs2O, K2O, etc., alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc., or any combination thereof. The above alkaline earth metal-containing compound may include BaO, SrO, CaO, Ba x Sr 1-x O(x is 0 <x<1를 만족하는 실수임), Ba x Ca 1-x O(x is 0 <x<1를 만족하는 실수임) 등과 같은 알칼리 토금속 화합물을 포함할 수 있다. 상기 희토류 금속-함유 화합물은, YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, 또는 이의 임의의 조함을 포함할 수 있다. 또는, 상기 희토류 금속-함유 화합물은, 란타나이드 금속 텔루라이드를 포함할 수 있다. 상기 란타나이드 금속 텔루라이드의 예는, LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3등을 포함할 수 있다.

[0204] The above alkali metal complex, alkaline earth metal complex, and rare earth metal complex may comprise i) one of the ions of the alkali metal, alkaline earth metal, and rare earth metal as described above, and ii) a ligand bound to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0205] The electron injection layer described above may consist only of alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof, or may further include organic materials (e.g., compounds represented by the chemical formula 601).

[0206] According to one embodiment, the electron injection layer may be composed of i) an alkali metal-containing compound (e.g., an alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, etc.

[0207] If the electron injection layer further comprises an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix containing the organic material.

[0208] The thickness of the electron injection layer may be about 1 Å to about 100 Å or about 3 Å to about 90 Å. When the thickness of the electron injection layer satisfies the range described above, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.

[0209] [Second electrode (150)]

[0210] A second electrode (150) is disposed on the upper portion of the intermediate layer (130) as described above. The second electrode (150) may be a cathode, which is an electron injection electrode. In this case, a metal, alloy, electrically conductive compound, or any combination thereof having a low work function may be used as the material for the second electrode (150).

[0211] The second electrode (150) may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode (150) may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode.

[0212] The second electrode (150) may have a single-layer structure or a multi-layer structure having multiple layers.

[0213] [Capping layer]

[0214] A first capping layer may be disposed on the outer side of the first electrode (110), and / or a second capping layer may be disposed on the outer side of the second electrode (150). Specifically, the light-emitting element (10) may have a structure in which the first capping layer, the first electrode (110), the intermediate layer (130), and the second electrode (150) are stacked in order, a structure in which the first electrode (110), the intermediate layer (130), the second electrode (150), and the second capping layer are stacked in order, or a structure in which the first capping layer, the first electrode (110), the intermediate layer (130), the second electrode (150), and the second capping layer are stacked in order.

[0215] Light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (10) can be emitted to the outside through the first electrode (110), which is a semi-transparent electrode or a transparent electrode, and the first capping layer, and light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (10) can be emitted to the outside through the second electrode (150), which is a semi-transparent electrode or a transparent electrode, and the second capping layer.

[0216] The first capping layer and the second capping layer can serve to improve external light emission efficiency based on the principle of constructive interference. As a result, the light extraction efficiency of the light-emitting element (10) is increased, and the light emission efficiency of the light-emitting element (10) can be improved.

[0217] Each of the above first capping layer and second capping layer may include a material having a refractive index of 1.6 or higher (at 589 nm).

[0218] The first capping layer and the second capping layer may independently be an organic capping layer containing organic material, an inorganic capping layer containing inorganic material, or an organic-inorganic composite capping layer containing organic material and inorganic material.

[0219] At least one of the first capping layer and the second capping layer may independently comprise a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to one embodiment, at least one of the first capping layer and the second capping layer may independently comprise an amine group-containing compound.

[0220] For example, at least one of the first capping layer and the second capping layer may independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0221] According to another embodiment, at least one of the first capping layer and the second capping layer may independently comprise one of the compounds HT28 to HT33, one of the following compounds CP1 to CP6, β-NPB, or any of the same:

[0222]

[0223]

[0224] [Electronic device]

[0225] The light-emitting element may be included in various electronic devices. For example, an electronic device including the light-emitting element may be a light-emitting device, an authentication device, etc.

[0226] The electronic device (e.g., a light-emitting device) may further include, in addition to the light-emitting element, i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or color conversion layer may be disposed in at least one direction of propagation of light emitted from the light-emitting element. For example, the light emitted from the light-emitting element may be blue light or white light. Refer to the description of the light-emitting element above.

[0227] The electronic device may include a first substrate. The first substrate may include a plurality of subpixel regions, the color filter may include a plurality of color filter regions corresponding to each of the plurality of subpixel regions, and the color conversion layer may include a plurality of color conversion regions corresponding to each of the plurality of subpixel regions.

[0228] A pixel defining film is placed between the plurality of subpixel regions above to define each subpixel region.

[0229] The above color filter may further include a plurality of color filter regions and a light-blocking pattern disposed between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-blocking pattern disposed between the plurality of color conversion regions.

[0230] The plurality of color filter regions (or plurality of color conversion regions) comprises a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or plurality of color conversion regions) may include quantum dots. Specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Refer to the description of quantum dots as provided in this specification. The first region, the second region, and / or the third region may each further include scatterers.

[0231] For example, the light-emitting element may emit a first light, the first region may absorb the first light to emit a first-1 color light, the second region may absorb the first light to emit a second-1 color light, and the third region may absorb the first light to emit a third-1 color light. In this case, the first-1 color light, the second-1 color light, and the third-1 color light may have different maximum emission wavelengths. Specifically, the first light may be blue light, the first-1 color light may be red light, the second-1 color light may be green light, and the third-1 color light may be blue light.

[0232] The above electronic device may further include a thin-film transistor in addition to the light-emitting element described above. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, and either one of the source electrode and the drain electrode may be electrically connected to either one of the first electrode and the second electrode of the light-emitting element.

[0233] The above thin-film transistor may further include a gate electrode, a gate insulating film, etc.

[0234] The above active layer may include crystalline silicon, amorphous silicon, organic semiconductor, oxide semiconductor, etc.

[0235] The electronic device may further include a sealing portion for sealing a light-emitting element. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting element. The sealing portion allows light from the light-emitting element to be emitted to the outside while simultaneously blocking external air and moisture from penetrating the light-emitting element. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin film encapsulation layer comprising one or more organic and / or inorganic layers. If the sealing portion is a thin film encapsulation layer, the electronic device may be flexible.

[0236] On the sealing portion, in addition to the color filter and / or color conversion layer, various functional layers may be additionally disposed depending on the application of the electronic device. Examples of the functional layers may include a touchscreen layer, a polarizing layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information (e.g., fingertip, pupil, etc.).

[0237] The authentication device described above may further include means for collecting biometric information in addition to the light-emitting element described above.

[0238] The above electronic device can be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, endoscope display devices), fish finders, various measuring instruments, instruments (e.g., instruments for vehicles, aircraft, and ships), projectors, etc.

[0239] [Explanation of Figures 2 and 3]

[0240] FIG. 2 is a cross-sectional view of an electronic device (180) according to one embodiment of the present invention.

[0241] The electronic device (180) of FIG. 2 includes a substrate (100), a thin-film transistor (TFT), a light-emitting element, and a sealing portion (300) that seals the light-emitting element.

[0242] The substrate (100) may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer (210) may be disposed on the substrate (100). The buffer layer (210) may prevent the penetration of impurities through the substrate (100) and may serve to provide a flat surface on the upper surface of the substrate (100).

[0243] A thin-film transistor (TFT) may be disposed on the buffer layer (210). The thin-film transistor (TFT) may include an active layer (220), a gate electrode (240), a source electrode (260), and a drain electrode (270).

[0244] The active layer (220) may include an inorganic semiconductor, an organic semiconductor, or an oxide semiconductor such as silicon or polysilicon, and includes a source region, a drain region, and a channel region.

[0245] A gate insulating film (230) for insulating the active layer (220) and the gate electrode (240) may be disposed on the upper part of the active layer (220), and a gate electrode (240) may be disposed on the upper part of the gate insulating film (230).

[0246] An interlayer insulating film (250) may be disposed on the upper portion of the gate electrode (240). The interlayer insulating film (250) is disposed between the gate electrode (240) and the source electrode (260) and between the gate electrode (240) and the drain electrode (270) to insulate them.

[0247] A source electrode (260) and a drain electrode (270) may be disposed on the interlayer insulating film (250). The interlayer insulating film (250) and the gate insulating film (230) may be formed so as to expose the source region and the drain region of the active layer (220), and the source electrode (260) and the drain electrode (270) may be disposed to be in contact with the exposed source region and the drain region of the active layer (220).

[0248] Such a thin-film transistor (TFT) can be electrically connected to a light-emitting element to drive the light-emitting element and is covered and protected by a passivation layer (280). The passivation layer (280) may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element is provided on the passivation layer (280). The light-emitting element includes a first electrode (110), an intermediate layer (130), and a second electrode (150).

[0249] The first electrode (110) may be disposed on the passivation layer (280). The passivation layer (280) may be disposed so as to expose a certain area without covering the entire drain electrode (270), and the first electrode (110) may be disposed to be connected to the exposed drain electrode (270).

[0250] A pixel defining film (290) including an insulating material may be disposed on the first electrode (110). The pixel defining film (290) exposes a predetermined area of ​​the first electrode (110), and an intermediate layer (130) may be formed in the exposed area. The pixel defining film (290) may be a polyimide or polyacrylic-based organic film. Although not shown in FIG. 2, some or more layers of the intermediate layer (130) may extend to the upper part of the pixel defining film (290) and be disposed in the form of a common layer.

[0251] A second electrode (150) is disposed on the intermediate layer (130), and a capping layer (170) may be additionally formed on the second electrode (150). The capping layer (170) may be formed to cover the second electrode (150).

[0252] A sealing portion (300) may be disposed on the capping layer (170). The sealing portion (300) may be disposed on a light-emitting element and serve to protect the light-emitting element from moisture or oxygen. The sealing portion (300) may include an inorganic film comprising silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film comprising polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), an epoxy resin (e.g., AGE (aliphatic glycidyl ether), etc.) or any combination thereof; or a combination of an inorganic film and an organic film.

[0253] FIG. 3 is a cross-sectional view of an electronic device (190) according to another embodiment of the present invention.

[0254] The electronic device (190) of FIG. 3 is the same electronic device as the light-emitting device of FIG. 2, except that a light-blocking pattern (500) and a functional area (400) are additionally disposed on the upper part of the encapsulation portion (300). The functional area (400) may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. According to one embodiment, the light-emitting element included in the electronic device of FIG. 3 may be a tandem light-emitting element.

[0255] [Manufacturing Method]

[0256] Each layer included in the hole transport region, each light-emitting layer, and each layer included in the electron transport region can be formed in a predetermined region using various methods such as vacuum deposition, spin coating, casting, LB method (Langmuir-Blodgett), inkjet printing, laser printing, and laser thermal imaging (LITI).

[0257] When each layer included in the hole transport region, the emissive layer, and each layer included in the electron transport region are formed by vacuum deposition, the deposition conditions are, for example, a deposition temperature of about 100 to about 500°C, and about 10 -8 to about 10 -3 Within a vacuum level of torr and a deposition rate range of about 0.01 to about 100 Å / sec, the material to be included in the layer to be formed and the structure of the layer to be formed can be selected.

[0258] When forming each layer included in the hole transport region, the light-emitting layer, and each layer included in the electron transport region by spin coating, the coating conditions can be selected, for example, within a coating speed of about 2000 rpm to about 5000 rpm and a heat treatment temperature range of about 80°C to 200°C, taking into consideration the material to be included in the layer to be formed and the structure of the layer to be formed.

[0259] An ink composition for a light-emitting device according to one embodiment of the present invention can be used in a solution process such as spin coating or inkjet printing.

[0260] [General Definition of Substituents]

[0261] C3-C in this specification 60 A carbocyclic group refers to a cyclic group having 3 to 60 carbon atoms, consisting solely of carbon as ring-forming atoms, and C1-C 60 A heterocyclic group refers to a cyclic group having 1 to 60 carbon atoms that includes, in addition to carbon, a heteroatom as a ring-forming atom. The above C3-C 60 Carbocyclic group and C1-C 60 Each heterocyclic group may be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed together. For example, the above C1-C 60 The number of ring-forming atoms in a heterocyclic group can be 3 to 61.

[0262] In this specification, the cyclic group is the above C3-C 60 Carbocyclic group and C1-C 60 Includes all heterocyclic groups.

[0263] In this specification, π electron-excess C3-C 60 cyclic group (π electron-rich C3-C 60 A cyclic group refers to a cyclic group having 3 to 60 carbon atoms that does not contain *-N=*' as a ring-forming moiety, and π electron-deficient nitrogen-containing C1-C 60 cyclic group (π electron-deficient nitrogen-containing C1-C 60 A cyclic group refers to a heterocyclic group having 1 to 60 carbon atoms containing *-N=*' as a ring-forming moiety.

[0264] for example,

[0265] The above C3-C 60 The carbocyclic group may be i) group T1 or ii) a condensed ring group formed by the condensation of two or more groups T1 (e.g., cyclopentadiene group, adamantane group, norbornane group, benzene group, pentylene group, naphthalene group, azulene group, indacene group, acenaphtylene group, phenalene group, phenanthrene group, anthracene group, fluoranthene group, triphenylene group, pyrene group, chrysene group, perylene group, pentapene group, heptylene group, naphthacene group, fisene group, hexacene group, pentacene group, rubicene group, coronene group, ovalene group, indene group, fluorene group, spiro-bifluorene group, benzofluorene group, indenophenanthrene group, or indenoanthracene group), and

[0266] The above C1-C 60A heterocyclic group is i) group T2, ii) a condensed ring group formed by the condensation of two or more groups T2, or iii) a condensed ring group formed by the condensation of one or more groups T2 and one or more groups T1 (e.g., pyrrole group, thiophene group, furan group, indole group, benzodole group, naphthoyndole group, isodole group, benzisoindole group, naphthoyisoindole group, benzocillol group, benzothiophene group, benzofuran group, carbazole group, dibenzocillol group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolocarbazole group, benzofurocarbazole group, benzothienocarbazole group, benzocillolocarbazole group, benzodolocarbazole group, benzoindolocarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthiophene group, Benzonaphthosilol group, benzofurodibenzofuran group, benzofurodibenzothiophen group, benzothienodibenzothiophen group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiaazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazolin group, benzoquinazolin group, phenanthroline group, sinoline group, phthalazine group, It may be the naftiridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluoren group, azadibenzocilol group, azadibenzothiophen group, azadibenzofuran group, etc.),

[0267] The above π electron-excess C3-C 60A cyclic group is i) group T1, ii) a condensed ring group formed by condensing two or more groups T1 together, iii) group T3, iv) a condensed ring group formed by condensing two or more groups T3 together, or v) a condensed ring group formed by condensing one or more groups T3 and one or more groups T1 together (e.g., the above C3-C 60 Carbocyclic group, 1H-pyrrole group, Silol group, Borole group, 2H-pyrrole group, 3H-pyrrole group, Thiophene group, Furan group, Indole group, Benzoindole group, Naphthoyindole group, Isoindole group, Benzoisoindole group, Naphthoyisoindole group, Benzocilol group, Benzothiophene group, Benzofuran group, Carbazole group, Dibenzocilol group, Dibenzothiophene group, Dibenzofuran group, Indenocarbazole group, Indolocarbazole group, Benzofurocarbazole group, Benzothienocarbazole group, Benzocilolocarbazole group, Benzoindolocarbazole group, Benzocarbazole group, Benzonaphthofuran group, Benzonaphthothiophene group, Benzonaphtholilol group, Benzofurodibenzofuran group, It may be the benzopurodibenzothiophen group, benzothienodibenzothiophen group, etc.,

[0268] The above π electron-deficient nitrogen-containing C1-C 60A cyclic group is i) group T4, ii) a condensed ring group formed by the condensation of two or more groups T4, iii) a condensed ring group formed by the condensation of one or more groups T4 and one or more groups T1, iv) a condensed ring group formed by the condensation of one or more groups T4 and one or more groups T3, or v) a condensed ring group formed by the condensation of one or more groups T4, one or more groups T1, and one or more groups T3 (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiaazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiaazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, It may be the isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazolin group, benzoquinazolin group, phenanthroline group, sinoline group, phthalazine group, naftiridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluoren group, azadibenzocilol group, azadibenzothiophen group, azadibenzofuran group, etc.),

[0269] The above group T1 is a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, norbornane (or, bicyclo[2.2.1]heptane)) group, norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.1.1]octane group, or a benzene group, and

[0270] The above group T2 is a furan group, a thiophene group, a 1H-pyrrole group, a silol group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazol group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiaazole group, a thiadiazole group, azasilol group, azaborol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, It is a dihydropyrazine group, a tetrahydropyridazine group, or a dihydropyridazine group, and

[0271] The above group T3 is a furan group, a thiophene group, an 1H-pyrrole group, a silol group, or a borole group, and

[0272] The above group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazol group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiaazole group, a thiadiazole group, an azacilol group, an azaborol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.

[0273] In this specification, the cyclic group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, π electron-excess C3-C 60 Cyclic group or π electron-deficient nitrogenous C1-C 60 The term "cyclic group" may be a group condensed to any cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) depending on the structure of the chemical formula in which the term is used. For example, "benzene group" may be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by a person skilled in the art depending on the structure of the chemical formula containing the "benzene group."

[0274] For example, 1 valence C3-C 60 Carbocyclic group and 1 valence C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkyl group, C1-C 10 Heterocycloalkyl group, C3-C 10 Cycloalkenyl group, C1-C 10 Heterocycloalkenyl group, C6-C 60 Aryl group, C1-C 60 It may include a heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic heterocondensed polycyclic group, and a divalent C3-C 60 Carbocyclic groups and 2 C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkylene group, C1-C 10Heterocycloalkylene group, C3-C 10 Cycloalkenylene group, C1-C 10 Heterocycloalkenylene group, C6-C 60 Aryllene group, C1-C 60 It may include a heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a divalent non-aromatic heterocondensed polycyclic group.

[0275] C1-C in this specification 60 The alkyl group refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, n -Propyl group, isopropyl group, n -butyl group, sec -butyl group, isobutyl group, tert -butyl group, n -Pentyl, tert -Pentyl group, neopentyl group, isopentyl group, sec -pentyl group, 3-pentyl group, sec -Isopentyl group, n - Hexyl group, isohexyl group, sec -hexyl group, tert -hexyl group, n - heptyl group, isoheptyl group, sec -Heptyl group, tert -Heptyl group, n -Octyl group, iso-octyl group, sec -Octyl group, tert -Octyl group, n -Nonilgi, Isononilgi, sec -Playing, tert -Playing, n - Decyl group, isodecyl group, sec -Desil, tert - Includes decyl groups, etc. C1-C in this specification. 60 The alkylene group is the C1-C 60 It refers to a divalent group having the same structure as an alkyl group.

[0276] C2-C in this specification 60 The alkenyl group is C2-C 60It refers to a monovalent hydrocarbon group comprising one or more carbon-carbon double bonds at the middle or terminal of an alkyl group, and specific examples thereof include an ethenyl group, a propenyl group, a butenyl group, etc. In this specification, C2-C 60 The alkenylene group is the above C2-C 60 It refers to a divalent group having the same structure as an alkenyl group.

[0277] C2-C in this specification 60 The alkynyl group is C2-C 60 It refers to a monovalent hydrocarbon group comprising one or more carbon-carbon triple bonds at the middle or terminal of an alkyl group, and specific examples thereof include ethinyl groups, propynyl groups, etc. In this specification, C2-C 60 The alkynylene group is the above C2-C 60 It refers to a divalent group having the same structure as an alkynyl group.

[0278] C1-C in this specification 60 The alkoxy group is -OA 101 (Here, A 101 The above C1-C 60 It refers to a monovalent group having the chemical formula of an alkyl group, and specific examples thereof include a methoxy group, an ethoxy group, an isopropyloxy group, etc.

[0279] C3-C in this specification 10 A cycloalkyl group refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and specific examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, norbornanyl group (or, a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.1.1]octyl group, etc. In this specification, C3-C 10 The cycloalkylene group is the C3-C 10It refers to a divalent group having the same structure as a cycloalkyl group.

[0280] C1-C in this specification 10 A heterocycloalkyl group refers to a monovalent cyclic group having 1 to 10 carbon atoms, comprising at least one heteroatom as a ring-forming atom in addition to a carbon atom, and specific examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, a tetrahydrothiophenyl group, etc. In this specification, C1-C 10 The heterocycloalkylene group is the C1-C 10 It refers to a divalent group having the same structure as a heterocycloalkyl group.

[0281] C3-C in this specification 10 A cycloalkenyl group refers to a monovalent cyclic group having 3 to 10 carbon atoms, having at least one carbon-carbon double bond within the ring, but not having aromaticity; specific examples thereof include cyclopentenyl groups, cyclohexenyl groups, cycloheptenyl groups, etc. In this specification, C3-C 10 The cycloalkenylene group is the above C3-C 10 It refers to a divalent group having the same structure as a cycloalkenyl group.

[0282] C1-C in this specification 10 The heterocycloalkenyl group is a monovalent cyclic group having 1 to 10 carbon atoms, comprising, in addition to the carbon atom, at least one heteroatom as a ring-forming atom, and has at least one double bond within the ring. The C1-C 10 Specific examples of heterocycloalkenyl groups include 4,5-dihydro-1,2,3,4-oxatriazoleyl groups, 2,3-dihydrofuranyl groups, 2,3-dihydrothiophenyl groups, etc. In this specification, C1-C 10 The heterocycloalkenylene group is the above C1-C 10It refers to a divalent group having the same structure as a heterocycloalkenyl group.

[0283] C6-C in this specification 60 An aryl group refers to a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, and C6-C 60 An arylene group refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. The above C6-C 60 Specific examples of aryl groups include phenyl group, pentalenyl group, naphthyl group, azulenyl group, indacenyl group, acenaphthyl group, phenalenyl group, phenanthrenyl group, anthracenyl group, fluoranthenyl group, triphenylenyl group, pyrenyl group, chrysenyl group, perylenyl group, pentaphenyl group, Includes hepthalenyl group, naphthacenyl group, fisenyl group, hexacenyl group, penthacenyl group, rubisenyl group, coronenyl group, ovalenyl group, etc. The above C6-C 60 Aryl group and C6-C 60 If the arylene group contains two or more rings, the two or more rings can be condensed together.

[0284] C1-C in this specification 60 A heteroaryl group refers to a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, comprising at least one heteroatom as a ring-forming atom in addition to a carbon atom, and C1-C 60 A heteroarylene group refers to a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, which additionally includes at least one heteroatom as a ring-forming atom in addition to the carbon atoms. 60 Specific examples of heteroaryl groups include pyridinyl groups, pyrimidinyl groups, pyrazinyl groups, pyridazinyl groups, triazinyl groups, quinolinyl groups, benzoquinolinyl groups, isoquinolinyl groups, benzisoquinolinyl groups, quinoxalinyl groups, benzoquinoxalinyl groups, quinazolinyl groups, benzoquinazolinyl groups, cinolinyl groups, phenanthrolinyl groups, phthalazinyl groups, naphthalidinyl groups, etc. The above C1-C60 Heteroaryl group and C1-C 60 When a heteroarylene group contains two or more rings, the two or more rings can be condensed together.

[0285] In this specification, a monovalent non-aromatic condensed polycyclic group refers to a monovalent group (e.g., having 8 to 60 carbon atoms) in which two or more rings are condensed together, and the entire molecule contains only carbon as a ring-forming atom and has non-aromaticity. Specific examples of the monovalent non-aromatic condensed polycyclic group include indenyl groups, fluorenyl groups, spiro-bifluorenyl groups, benzofluorenyl groups, indenopenantrenyl groups, indenoanthracenyl groups, etc. In this specification, a divalent non-aromatic condensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.

[0286] In this specification, a monovalent non-aromatic condensed heteropolycyclic group means a monovalent group (e.g., having 1 to 60 carbon atoms) in which two or more rings are condensed together, and in addition to carbon atoms as ring-forming atoms, at least one heteroatom is included, and the entire molecule is non-aromatic. Specific examples of the above monovalent non-aromatic heterocondensed polycyclic group include: a pyrrole group, a thiophenyl group, a furanyl group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzocylol group, a benzothiophenyl group, a benzofuranyl group, a carbazole group, a dibenzocylol group, a dibenzothiophenyl group, a dibenzofuranyl group, azacarbazole group, azafluorenyl group, azadibenzocylol group, azadibenzothiophenyl group, azadibenzofuranyl group, a pyrazol group, an imidazole group, a triazole group, a tetrazole group, an oxazole group, an isooxazole group, a thiazole group, an isothiazole group, an oxadiazole group, a thiadiazole group, a thiadiazole group, Includes benzopyrazol group, benzimidazole group, benzoxazole group, benzothiazole group, benzoxadiazole group, benzothiadiazole group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indenocarbazole group, indolocarbazole group, benzofurocarbazole group, benzothienocarbazole group, benzosilolocarbazole group, benzindolocarbazole group, benzocarbazole group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilol group, benzofurodibenzofuranyl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc. In this specification, a divalent non-aromatic heterocondensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic heterocondensed polycyclic group.

[0287] C6-C in this specification 60 The aryloxy group is -OA 102 (Here, A 102 is the above C6-C 60 Pointing to arylgime), and the above C6-C 60The arylthio group is -SA 103 (Here, A 103 The above C6-C 60 It refers to the Arilgigiim).

[0288] C7-C in this specification 60 The arylalkyl group is -A 104 A 105 (Here, A 104 is C1-C 54 It is an alkylene group, and A 105 is C6-C 59 Referring to arylgiim), and C2-C in this specification 60 The heteroarylalkyl group is -A 106 A 107 (Here, A 106 C1-C 59 It is an alkylene group, and A 107 C1-C 59 It refers to a heteroaryl group.

[0289] "R" in this specification 10a "Is,

[0290] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group, or nitro group;

[0291] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q 11 )(Q 12), or substituted or unsubstituted with any combination thereof, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, or C1-C 60 Alkoxygenation;

[0292] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, C1-C 60 Alkoxy group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ), -P(=O)(Q 21 )(Q 22 ), or substituted or unsubstituted with any combination thereof, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, or C2-C 60 heteroarylalkyl group; or

[0293] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q31 ), -S(=O)2(Q 31 ), or -P(=O)(Q 31 )(Q 32 );

[0294] It could be.

[0295] Q1 to Q3, Q in this specification 11 to Q 13 , Q 21 to Q 23 and Q 31 to Q 33 They are independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 Alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy group; or deuterium, -F, cyano group, C1-C 60 Alkyl group, C1-C 60 C3-C substituted or unsubstituted with an alkoxy group, a phenyl group, a biphenyl group, or any combination thereof 60 Carbocyclic group; C1-C 60 Heterocyclic group; C7-C 60 Arylalkyl group; or C2-C 60 It may be a heteroarylalkyl group.

[0296] In this specification, a heteroatom refers to any atom other than a carbon atom. Examples of such heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0297] In this specification, third-row transition metals include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), or gold (Au), etc.

[0298] In this specification, "Ph" means a phenyl group, "Me" means a methyl group, "Et" means an ethyl group, and "ter-Bu" or "But " represents the tert-butyl group, and "OMe" represents the methoxy group.

[0299] In this specification, "biphenyl group" means "phenyl group substituted with a phenyl group." The "biphenyl group" is a substituent of "C6-C 60 It belongs to the "substituted phenyl group" which is an "aryl group".

[0300] In this specification, "terphenyl group" means "phenyl group substituted with a biphenyl group." The "terphenyl group" is a substituent of "C6-C 60 C6-C substituted with aryl groups 60 It belongs to the "substituted phenyl group" which is an "aryl group".

[0301] The maximum number of carbon atoms in the definition of a substituent is exemplary. For example, C1-C 60 The maximum number of carbon atoms in an alkyl group being 60 is exemplary, and the definition of an alkyl group is C1-C 20 The same applies to alkyl groups. The same applies to other cases.

[0302] In this specification, * and *' refer to bonding sites with adjacent atoms in the corresponding chemical formulas, unless otherwise defined.

[0303] Hereinafter, a compound and a light-emitting element according to one embodiment of the present invention will be described in more detail with reference to examples.

[0305] [Example]

[0306] Fabrication of light-emitting devices

[0307] An ink composition for a light-emitting layer was prepared with the composition of Table 1 below.

[0308] Quantum dot (10nm) - blue First solvent [100 volume%] Second solvent [65 volume%] Third solvent (boiling point °C) [ 2 volume % ] Comparative Example 1 ZnSe shell and II-VI group core phenylcyclohexane hexadecane - Comparative Example 2 ZnS shell and II-VI group core phenylcyclohexane hexadecane - Comparative Example 3 ZnSe shell and III-V group core phenylcyclohexane hexadecane - Comparative Example 4 ZnS shell and III-V group core phenylcyclohexane hexadecane - Example 1 ZnSe shell and II-VI group core phenylcyclohexane hexadecane Tributyl phosphine (245) Example 2 ZnS shell and II-VI group core phenylcyclohexane hexadecane Tributyl phosphine (245) Example 3 ZnSe shell and III-V group core phenylcyclohexane hexadecane Tributyl phosphine (245) Example 4 ZnS shell and III-V group core phenylcyclohexane hexadecane Tributyl phosphine (245) Example 5 ZnSe shell and II-VI group core phenylcyclohexane hexadecane Trihexyl amine(265) Example 6 ZnS shell and II-VI group core phenylcyclohexane hexadecane Trioctyl amine (365)

[0309] The viscosity of both the Comparative Example and the Example was approximately 5 cP, and the surface tension of both was approximately 28 dyne / cm. The vapor pressure of both the Comparative Example and the Example was 10 -3 mmHg to 9x10 -3 It was mmHg.

[0311] Electronic device manufacturing

[0312] Comparative Example 5

[0313] As shown in FIG. 2, an electronic device was manufactured by forming a light-emitting layer within an intermediate layer (130) using an inkjet with the quantum dot ink composition of Comparative Example 1 of Table 1.

[0314] Comparative Examples 6 to 8

[0315] An electronic device equivalent to Comparative Example 5 was manufactured, except that the light-emitting layer used the quantum dot ink compositions of Comparative Examples 2 to 4 of Table 1, respectively.

[0316] Examples 7 to 12

[0317] An electronic device equivalent to Comparative Example 5 was manufactured, except that the light-emitting layer used the quantum dot ink compositions of Examples 1 to 6 of Table 1, respectively.

[0319] To evaluate the characteristics of the electronic devices fabricated in Comparative Examples 5 to 8 and Examples 7 to 12, the absorption rate and light conversion efficiency at a current density of 10 mA / cm² were measured, and the results are shown in Table 2.

[0320] Efficiency and other factors were measured using the C9920-2-12 measuring device from Hamamatsu Photonics.

[0321] Quantum efficiency (%) Peak Position(nm) FWHM(nm) Comparative Example 5 12.4 450 21 Comparative Example 6 75 446 18 Comparative Example 7 58 540 38 Comparative Example 8 83 540 38 Example 7 51 450 21 Example 8 86 446 18 Example 9 74 540 38 Example 10 95 540 38 Example 11 44 450 21 Example 12 80 446 18

[0322] From Table 2 above, it was confirmed that quantum efficiency was improved through defect control without changes in peak position or FWHM.

[0323] This is believed to be because the third solvent included in the ink composition of the example, e.g., tributyl phosphine, trihexyl amine, or trioctyl amine, partially remained in the quantum dots of the formed light-emitting layer and coordinated with the chalcogenide component, e.g., ZnS or ZnSe, which is the defect site of the quantum dot shell, thereby preventing the defect site from acting as an electron trap. Explanation of the symbols

[0325] 10: Light-emitting element 110: First electrode 130: Middle layer 150: Second electrode

Claims

Claim 1 Quantum dots; and a mixed solvent of a first solvent, a second solvent, and a third solvent; wherein the first solvent is C6-C 50 It is an aromatic hydrocarbon, and the second solvent is C1-C 20 An ink composition for a light-emitting device, wherein the third solvent is an aliphatic hydrocarbon and the third solvent is a tertiary alkyl phosphine and / or a tertiary alkyl amine. Claim 2 An ink composition for a light-emitting device according to claim 1, wherein the boiling point of the third solvent is greater than 220°C and up to 500°C. Claim 3 An ink composition for a light-emitting device according to claim 1, wherein the first solvent comprises toluene, xylene, ethylbenzene, diethylbenzene, mesitylene, propylbenzene, cyclohexylbenzene, dimethoxybenzene, anisole, ethoxytoluene, phenoxytoluene, isopropylbiphenyl, dimethylanisole, propylanisole, 1-ethylnaphthalene, 2-ethylnaphthalene, 2-ethylbiphenyl, octylbenzene, or any combination thereof. Claim 4 An ink composition for a light-emitting device according to claim 1, wherein the second solvent comprises n-octane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n-pentadecane, n-hexadecane, 2-methylheptane, 3-methylheptane, 4-methylheptane, 2,2-dimethylhexane, 2,3-dimethylhexane, 2,4-dimethylhexane, 2,5-dimethylhexane, 3,3-dimethylhexane, 3-ethylhexane, 2,2,4-trimethylpentane, 2-methyloctane, 2-methylnonane, 2-methyldecane, 2-methylundecane, 2-methyldodecane, 2-methyltridecane, or any combination thereof. Claim 5 An ink composition for a light-emitting device according to claim 1, wherein the third solvent comprises tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tripropylamine, tributylamine, trihexylamine, triheptylamine, trioctylamine, or any combination thereof. Claim 6 An ink composition for a light-emitting device according to claim 1, wherein the second solvent is 20 to 70 volume% based on 100 volume% of the first solvent. Claim 7 An ink composition for a light-emitting device according to claim 1, wherein the third solvent is 1 to 20 volume% based on 100 volume% of the first solvent. Claim 8 An ink composition for a light-emitting device according to claim 1, wherein the quantum dots have a core-shell structure comprising a core including a semiconductor compound; and a shell including an oxide of a metal, metalloid or nonmetal, a semiconductor compound, or a combination thereof. Claim 9 An ink composition for a light-emitting device according to claim 8, wherein the semiconductor compound comprises a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof; and the oxide of the metal, metalloid, or nonmetal independently comprises SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof. Claim 10 8. Semiconductor compounds are CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS. HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS 3 , InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, Ink composition containing SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe or any combination thereof. Claim 11 In claim 8, the semiconductor compound included in the shell comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof, an ink composition for a light-emitting device. Claim 12 An ink composition for a light-emitting device according to claim 1, wherein the viscosity (@25℃) of the composition is 2 to 10 cP. Claim 13 An ink composition for a light-emitting device according to claim 1, wherein the surface tension of the composition is 20 to 40 dyne / cm. Claim 14 In claim 1, the vapor pressure of the composition is 10 -2 Ink composition for light-emitting devices with a g / mmHg or less. Claim 15 A light-emitting device comprising: a first electrode; a second electrode facing the first electrode; an intermediate layer interposed between the first electrode and the second electrode and including a light-emitting layer, wherein the light-emitting layer is a layer made of the ink composition for a light-emitting device of claim 1. Claim 16 A light-emitting device according to claim 15, further comprising: an intermediate layer comprising a hole transport region including a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof; and / or an electron transport region including a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof. Claim 17 A light-emitting device according to claim 15, wherein the light-emitting layer comprises quantum dots, and the surface of the quantum dots comprises tertiary alkyl phosphine and / or tertiary alkyl amine. Claim 18 A light-emitting device according to claim 17, wherein the surface of the quantum dot comprises a chalcogenide component, and the upper chalcogenide component; and the tertiary alkyl phosphine and / or tertiary alkyl amine; are coordinately bonded. Claim 19 A light-emitting element according to claim 17, wherein the tertiary alkyl phosphine and / or tertiary alkyl amine comprises tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tripropylamine, tributylamine, trihexylamine, triheptylamine, trioctylamine, or any combination thereof. Claim 20 Electronic device including the light-emitting element of paragraph 15

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