Display apparatus

Abstract

The present invention provides a display device comprising: a first substrate including a display area and a non-display area surrounding the display area; a bank disposed on the display area of ​​the first substrate, wherein first openings, second openings, third openings, first dummy openings, and second dummy openings are defined; a first quantum dot layer located within the first openings; a dummy layer located within the first dummy openings; and a pixel electrode located between the first substrate and the bank; wherein the first dummy openings do not overlap with the pixel electrode.

Description

Technology Field

[0001] Embodiments of the present invention relate to a display device, and more specifically, to a display device capable of reducing the possibility of defects occurring during the manufacturing process. Background Technology

[0002] A display device has multiple pixels. For a full-color display device, multiple pixels can emit light of different colors. To this end, at least some of the pixels of the display device have color conversion units. Accordingly, light of a first color generated from the light-emitting unit of some pixels is converted into light of a second color by passing through the corresponding color conversion unit and emitted externally. The problem to be solved

[0003] However, these conventional display devices had a problem in that there was a high possibility of defects occurring during the manufacturing process.

[0004] The present invention aims to solve various problems, including those mentioned above, by providing a display device capable of reducing the possibility of defects occurring during the manufacturing process. However, these problems are exemplary and do not limit the scope of the present invention. means of solving the problem

[0005] According to one aspect of the present invention, a display device is provided comprising: a first substrate including a display area and a non-display area around the display area; a bank disposed on the display area of ​​the first substrate, wherein first openings, second openings, third openings, first dummy openings, and second dummy openings are defined; a first quantum dot layer located within the first openings; a dummy layer located within the first dummy openings; and a pixel electrode located between the first substrate and the bank; wherein the first dummy openings do not overlap with the pixel electrode.

[0006] In this embodiment, a second quantum dot layer located within the second openings may be further included.

[0007] In this embodiment, the first quantum dot layer converts light of a wavelength belonging to a first wavelength band into light of a wavelength belonging to a second wavelength band, and the second quantum dot layer converts light of a wavelength belonging to a first wavelength band into light of a wavelength belonging to a third wavelength band.

[0008] In this embodiment, a light-transmitting layer located within the third openings and allowing incident light to pass through may be further included.

[0009] In this embodiment, the dummy layer may include the same material as at least one of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer.

[0010] In this embodiment, a second substrate located on the upper side of the first substrate may be further included so that the bank is positioned between them.

[0011] In the present embodiment, a first color filter layer located between the first quantum dot layer and the second substrate; a second color filter layer located between the second quantum dot layer and the second substrate; and a third color filter layer located between the light-transmitting layer and the second substrate may be further included.

[0012] In the present embodiment, the first color filter layer, the second color filter layer, and the third color filter layer may be located between the dummy layer and the second substrate.

[0013] In this embodiment, the dummy layer may have hydrophilicity, and the bank may have liquid-repellent properties.

[0014] In this embodiment, the area of ​​one of the first dummy openings may be larger than the area of ​​one of the second dummy openings.

[0015] In the present embodiment, the second dummy openings may at least partially surround the first openings, the second openings, the third openings, and the first dummy openings.

[0016] In the present embodiment, the pixel electrode may include a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged on the first substrate so as to be spaced apart from each other.

[0017] In the present embodiment, the first pixel electrode overlaps at least partially with the first opening, the second pixel electrode overlaps at least partially with the second opening, and the third pixel electrode may overlap at least partially with the third opening.

[0018] In the present embodiment, the first pixel electrode, the second pixel electrode, and the third pixel electrode may not overlap with the first dummy openings.

[0019] In the present embodiment, the first pixel electrode, the second pixel electrode, and the third pixel electrode may not overlap with the second dummy openings.

[0020] In the present embodiment, the device may further include: a pixel defining film covering the edges of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein an opening is defined that exposes at least a portion of the first pixel electrode, an opening that exposes at least a portion of the second pixel electrode, and an opening that exposes at least a portion of the third pixel electrode; a light-emitting layer disposed on the first pixel electrode, the second pixel electrode, and the third pixel electrode and emitting light of a wavelength belonging to a first wavelength band; and a counter electrode disposed on the light-emitting layer.

[0021] In this embodiment, the light-emitting layer and the counter electrode may overlap with the first dummy openings.

[0022] In this embodiment, the light-emitting layer and the counter electrode may overlap with the second dummy openings.

[0023] According to another aspect of the present invention, a display device is provided comprising: a light-emitting panel comprising a first substrate including a display area and a non-display area around the display area and light-emitting elements disposed on the first substrate; and a second substrate and a color panel disposed on the second substrate and changing the wavelength of light emitted from the light-emitting panel, wherein the light-emitting panel further comprises a pixel electrode disposed on the first substrate; and the color panel further comprises a bank in which first openings, second openings, third openings, first dummy openings, and second dummy openings are defined, disposed on the display area of ​​the first substrate; a first quantum dot layer located within the first openings; and a dummy layer located within the first dummy openings, wherein the first dummy openings do not overlap with the pixel electrode.

[0024] In the present embodiment, the color panel may further include a second quantum dot layer located within the second openings.

[0025] In this embodiment, the light-emitting panel can emit light of a wavelength belonging to a first wavelength band.

[0026] In this embodiment, the first quantum dot layer converts light of a wavelength belonging to the first wavelength band passing through into light of a wavelength belonging to the second wavelength band, and the second quantum dot layer converts light of a wavelength belonging to the first wavelength band passing through into light of a wavelength belonging to the third wavelength band.

[0027] In the present embodiment, the color panel further includes a light-transmitting layer located within the third openings, and the light-transmitting layer can transmit light of a wavelength belonging to the incident first wavelength band.

[0028] In this embodiment, the dummy layer may include the same material as at least one of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer.

[0029] In the present embodiment, the color panel may further include: a first color filter layer located between the first quantum dot layer and the second substrate; a second color filter layer located between the second quantum dot layer and the second substrate; and a third color filter layer located between the light-transmitting layer and the second substrate.

[0030] In the present embodiment, the first color filter layer, the second color filter layer, and the third color filter layer may be located between the dummy layer and the second substrate.

[0031] In the present embodiment, the first color filter layer, the second color filter layer, and the third color filter layer may overlap with the second dummy openings.

[0032] In this embodiment, the dummy layer may have hydrophilicity, and the bank may have liquid-repellent properties.

[0033] In the present embodiment, the second dummy openings may at least partially surround the first openings, the second openings, the third openings, and the first dummy openings.

[0034] In this embodiment, the color panel may further include a column spacer located between the first substrate and the second substrate and overlapping with the bank.

[0035] Other aspects, features, and advantages other than those described above will become clear from the following specific details, claims, and drawings for implementing the invention. Effects of the invention

[0036] According to one embodiment of the present invention as described above, a display device capable of reducing the possibility of defects occurring during the manufacturing process can be implemented. Of course, the scope of the present invention is not limited by this effect. Brief explanation of the drawing

[0037] FIG. 1 is a schematic perspective view of a display device according to one embodiment of the present invention. FIG. 2a is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. FIG. 2b is a drawing illustrating the stacked structure of a light-emitting element according to one embodiment of the present invention. FIGS. 2c to 2i are drawings illustrating light-emitting units and charge-generating units according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing each part of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer of FIG. 2a. FIG. 4 is a schematic plan view of a display device according to one embodiment of the present invention. FIG. 5 is a schematic plan view of a display device according to one embodiment of the present invention. FIG. 6 is a schematic plan view of a display device according to one embodiment of the present invention. FIG. 7 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. FIG. 8 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. FIG. 9 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. FIG. 10 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. Specific details for implementing the invention

[0038] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0039] In the following embodiments, terms such as first, second, etc. are used not in a limiting sense, but for the purpose of distinguishing one component from another component.

[0040] In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0041] In the following embodiments, terms such as "include" or "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added.

[0042] In the following embodiments, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is directly on top of another part, but also cases where another film, region, or component is interposed in between.

[0043] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and therefore the present invention is not necessarily limited to what is illustrated.

[0044] In this specification, "A and / or B" indicates the case where it is A, B, or both A and B. Additionally, in this specification, "at least one of A and B" indicates the case where it is A, B, or both A and B.

[0045] In the following embodiments, the meaning of "the wiring extends in a first direction or a second direction" includes not only extending in a straight line shape, but also extending in a zigzag or curved shape along the first direction or the second direction.

[0046] In the following embodiments, "planar" refers to the view of the target part from above, and "cross-sectional" refers to the view of the cross-section obtained by vertically cutting the target part from the side. In the following embodiments, "superimposition" includes the superposition of the "planar" and "cross-sectional" views.

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings, and when describing with reference to the drawings, identical or corresponding components will be given the same reference numerals.

[0048] FIG. 1 is a schematic perspective view of a display device according to an embodiment of the present invention, FIG. 2a is a schematic cross-sectional view of a display device according to an embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view of each part of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer of FIG. 2a. FIG. 2a corresponds to a cross-sectional view taken along line II' of FIG. 1.

[0049] Referring to FIGS. 1, FIGS. 2a and FIGS. 3, a display device (1) may include a display area (DA) and a non-display area (NDA) surrounding the display area (DA). The display device (1) may provide an image through an array of multiple pixels (PX) arranged two-dimensionally in the display area (DA). The multiple pixels (PX) may include a first pixel (PX1), a second pixel (PX2), and a third pixel (PX3).

[0050] Each pixel (PX) of the display device (1) is an area capable of emitting light of a predetermined color, and the display device (1) can provide an image using the light emitted from the pixels (PX). For example, each pixel (PX) can emit red, green, or blue light.

[0051] The non-display area (NDA) is an area that does not provide an image and may completely surround the display area (DA). Drivers or main power lines for providing electrical signals or power to pixel circuits may be placed in the non-display area (NDA). The non-display area (NDA) may include pads to which electronic components or printed circuit boards can be electrically connected.

[0052] The display area (DA) may have a polygonal shape including a rectangle, as illustrated in FIG. 1. For example, the display area (DA) may have a rectangular shape where the width is greater than the height, a rectangular shape where the width is smaller than the height, or a square shape where the width and height are equal. Alternatively, the display area (DA) may have various shapes such as an ellipse or a circle.

[0053] In one embodiment, the display device (1) may include a light-emitting panel (10) and a color panel (20) stacked in the thickness direction (e.g., z-direction) of the display device (1). Referring to FIG. 2a, the light-emitting panel (10) may include a light-emitting element (OLED) disposed on a first substrate (100). For example, the light-emitting element (OLED) may include first to third light-emitting elements (OLED1, OLED2, OELD3). In this case, the first to third light-emitting elements (OLED1, OLED2, OELD3) may be organic light-emitting diodes. However, the present invention is not limited thereto. Various variations are possible, such as the first to third light-emitting elements (OLED1, OLED2, OELD3) being inorganic light-emitting diodes.

[0054] Light emitted from the first to third light-emitting elements (OLED1, OLED2, OLED3) (e.g., blue light (Lb)) can be converted into or passed through red light (Lr), green light (Lg), and blue light (Lb) while passing through the color panel (20).

[0055] In one embodiment, a pixel defining film (120) defining a light-emitting region of each of the first to third light-emitting elements (OLED1, OLED2, OLED3) may be disposed on the first substrate (100). That is, the pixel defining film (120) may include openings (120OP) defining a light-emitting region of each light-emitting element (OLED1, OLED2, OLED3).

[0056] In one embodiment, the pixel defining film (120) may include an organic insulating material. Alternatively, the pixel defining film (120) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxynitride (SiOxNy), or silicon oxide (SiOx). Alternatively, the pixel defining film (120) may include both an organic insulating material and an inorganic insulating material. In one embodiment, the pixel defining film (120) may include a light-blocking material and may be provided in black. The light-blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles (e.g., nickel, aluminum, molybdenum, and their alloys), metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride). When the pixel defining film (120) includes a light-blocking material, it may reduce external light reflection caused by metal structures placed below the pixel defining film (120).

[0057] In one embodiment, a filler (400) may be positioned between the first substrate (100) and the second substrate (600). The filler (400) may act as a buffer against external pressure, etc. The filler (400) may be composed of organic materials such as methyl silicone, phenyl silicone, and polyimide. However, it is not limited thereto, and the filler (400) may also be composed of organic sealants such as urethane resin, epoxy resin, acrylic resin, or inorganic sealants such as silicone.

[0058] In one embodiment, a bank (500) may be disposed on the filler (400). The bank (500) may include various materials capable of absorbing light. The bank (500) may include the same material as the pixel defining film (120) or may include a material different from the pixel defining film (120). For example, the bank (500) may include an opaque inorganic insulating material such as chromium oxide or molybdenum oxide or an opaque organic insulating material such as black resin.

[0059] In one embodiment, the bank (500) may include openings (OP1, OP2, OP3) corresponding to the light-emitting regions of each light-emitting element (OLED1, OLED2, OLED3). For example, the openings (OP1, OP2, OP3) defined in the bank (500) may correspond to the openings (120OP) defined in the pixel defining film (120). In one embodiment, a first quantum dot layer (561), a second quantum dot layer (563), and a light-transmitting layer (565) may be disposed in the openings (OP1, OP2, OP3) defined in the bank (500).

[0060] FIG. 2b is a drawing illustrating the stacked structure of a light-emitting element according to one embodiment.

[0061] Referring to FIG. 2b, the first light-emitting element (OLED1) may include a first pixel electrode (311), an intermediate layer (320), and a counter electrode (330) stacked sequentially, the second light-emitting element (OLED2) may include a second pixel electrode (313), an intermediate layer (320), and a counter electrode (330) stacked sequentially, and the third light-emitting element (OLED3) may include a third pixel electrode (315), an intermediate layer (320), and a counter electrode (330) stacked sequentially.

[0062] At this time, the intermediate layer (320) and the counter electrode (330) may be commonly provided in the first light-emitting element (OLED1) to the third light-emitting element (OLED3). That is, the intermediate layer (320) and the counter electrode (330) may be provided as a single unit. In addition, a capping layer (340) may be disposed on the counter electrode (330).

[0063] In one embodiment, the intermediate layer (320) may include light-emitting units (320-1, 320-3, 320-5, 320-7) and charge-generating units (320-2, 320-4, 320-6). Specifically, the intermediate layer (320) may include a first light-emitting unit (320-1), a second light-emitting unit (320-3), a third light-emitting unit (320-5), a fourth light-emitting unit (320-7), a first charge-generating unit (320-2), a second charge-generating unit (320-4), and a third charge-generating unit (320-6). Each of these units will be described in more detail through FIGS. 2c to 2i.

[0064] FIGS. 2c to 2i are drawings illustrating light-emitting units and charge-generating units according to an embodiment of the present invention.

[0065] Referring to FIG. 2c, the first light-emitting unit (320-1) may include a hole injection layer (321-1), a first hole transport layer (321-2), a first light-emitting auxiliary layer (321-3), a first light-emitting layer (321-4), a first buffer layer (321-5), and a first electron transport layer (321-6) that are sequentially stacked. However, the present invention is not limited thereto. At least one of the first hole transport layer (321-2), the first light-emitting auxiliary layer (321-3), the first buffer layer (321-5), and the first electron transport layer (321-6) may be omitted. For example, at least one of the first light-emitting auxiliary layer (321-3) and the first buffer layer (321-5) may be omitted.

[0066] At this time, the hole injection layer (321-1) can serve to inject holes toward the first light-emitting layer (321-4). The first hole transport layer (321-2) can serve to transfer holes from the hole injection layer (321-1) to the first light-emitting layer (321-4). The first light-emitting auxiliary layer (321-3) may be a layer added to match the resonance distance. The first electron transport layer (321-6) can serve to transfer electrons to the first light-emitting layer (321-4). The first buffer layer (321-5) can control (or regulate) the electrons transferred from the first electron transport layer (321-6) to the first light-emitting layer (321-4). Additionally, the first light-emitting layer (321-4) may be a blue light-emitting layer. However, the present invention is not limited thereto. The first light-emitting layer (321-4) may be a red light-emitting layer or a green light-emitting layer. The first light-emitting layer (321-4) may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0067] Referring to FIG. 2d, the first charge generation unit (320-2) may include a first n-type charge generation layer (322-1) and a first p-type charge generation layer (322-2). The first n-type charge generation layer (322-1) may serve to provide electrons to the first electron transport layer (321-6, FIG. 2c), and the first p-type charge generation layer (322-2) may serve to provide holes to the second hole transport layer (323-1, FIG. 2e).

[0068] Referring to FIG. 2e, the second light-emitting unit (320-3) may include a second hole transport layer (323-1), a second light-emitting auxiliary layer (323-2), a second light-emitting layer (323-3), a second buffer layer (323-4), and a second electron transport layer (323-5) that are sequentially stacked. However, the present invention is not limited thereto. At least one of the second hole transport layer (323-1), the second light-emitting auxiliary layer (323-2), the second buffer layer (323-4), and the second electron transport layer (323-5) may be omitted. For example, the second light-emitting auxiliary layer (323-2) and / or the second buffer layer (323-4) may be omitted.

[0069] The second hole transport layer (323-1), second light-emitting auxiliary layer (323-2), second light-emitting layer (323-3), second buffer layer (323-4), and second electron transport layer (323-5) of the second light-emitting unit (320-3) may each be provided with the same material as the first hole transport layer (321-2), first light-emitting auxiliary layer (321-3), first light-emitting layer (321-4), first buffer layer (321-5), and first electron transport layer (321-6) of the first light-emitting unit (320-1). However, the present invention is not limited thereto.

[0070] Referring to FIG. 2f, the second charge generation unit (320-4) may include a second n-type charge generation layer (324-1) and a second p-type charge generation layer (324-2). The second n-type charge generation layer (324-1) may serve to provide electrons to the second electron transport layer (323-5, FIG. 2e), and the second p-type charge generation layer (324-2) may serve to provide holes to the third hole transport layer (325-1, FIG. 2g).

[0071] Referring to FIG. 2g, the third light-emitting unit (320-5) may include a third hole transport layer (325-1), a third light-emitting auxiliary layer (325-2), a third light-emitting layer (325-3), a third buffer layer (325-4), and a third electron transport layer (325-5) that are sequentially stacked. However, the present invention is not limited thereto. At least one of the third hole transport layer (325-1), the third light-emitting auxiliary layer (325-2), the third buffer layer (325-4), and the third electron transport layer (325-5) may be omitted. For example, the third light-emitting auxiliary layer (325-2) and / or the third buffer layer (325-4) may be omitted.

[0072] In one embodiment, the third light-emitting layer (325-3) may be a green light-emitting layer. However, the present invention is not limited thereto. For example, the third light-emitting layer (325-3) may be a red light-emitting layer or a blue light-emitting layer.

[0073] In one embodiment, when the third light-emitting layer (325-3) is a green light-emitting layer and the first light-emitting layer (321-4) is a blue light-emitting layer, the third light-emitting layer (325-3) and the first light-emitting layer (321-4) may be provided with different materials. Additionally, the third hole transport layer (325-1), the third light-emitting auxiliary layer (325-2), the third buffer layer (325-4), and the third electron transport layer (325-5) of the third light-emitting unit (320-5) may be provided with materials different from the first hole transport layer (321-2), the first light-emitting auxiliary layer (321-3), the first buffer layer (321-5), and the first electron transport layer (321-6) of the first light-emitting unit (320-1), respectively.

[0074] Alternatively, if both the third light-emitting layer (325-3) and the first light-emitting layer (321-4) are blue light-emitting layers, the third hole transport layer (325-1), the third light-emitting auxiliary layer (325-2), the third buffer layer (325-4), and the third electron transport layer (325-5) of the third light-emitting unit (320-5) may each be provided with the same material as the first hole transport layer (321-2), the first light-emitting auxiliary layer (321-3), the first buffer layer (321-5), and the first electron transport layer (321-6) of the first light-emitting unit (320-1).

[0075] Referring to FIG. 2h, the third charge generation unit (320-6) may include a third n-type charge generation layer (326-1) and a third p-type charge generation layer (326-2). The third n-type charge generation layer (326-1) may serve to provide electrons to the third electron transport layer (326-5, FIG. 2g), and the third p-type charge generation layer (326-2) may serve to provide holes to the fourth hole transport layer (327-1, FIG. 2i).

[0076] Referring to FIG. 2i, the fourth light-emitting unit (320-7) may include a fourth hole transport layer (327-1), a fourth light-emitting auxiliary layer (327-2), a fourth light-emitting layer (327-3), a fourth buffer layer (327-4), a fourth electron transport layer (327-5), and an electron injection layer (327-6) that are sequentially stacked. However, the present invention is not limited thereto. At least one of the fourth hole transport layer (327-1), the fourth light-emitting auxiliary layer (327-2), the fourth buffer layer (327-4), and the fourth electron transport layer (327-5) may be omitted. For example, the fourth light-emitting auxiliary layer (327-2) and / or the fourth buffer layer (327-4) may be omitted.

[0077] The fourth hole transport layer (327-1), the fourth light-emitting auxiliary layer (327-2), the fourth light-emitting layer (327-3), the fourth buffer layer (327-4), and the fourth electron transport layer (327-5) of the fourth light-emitting unit (320-7) may each be provided with the same material as the first hole transport layer (321-2), the first light-emitting auxiliary layer (321-3), the first light-emitting layer (320-4), the first buffer layer (321-5), and the first electron transport layer (321-6) of the first light-emitting unit (320-1). The electron injection layer (327-6) may serve to inject electrons toward the fourth light-emitting layer (327-3).

[0078] In one embodiment, the intermediate layer (320, FIG. 2b) may include a first light-emitting layer (321-4, FIG. 2c), a second light-emitting layer (323-3, FIG. 2e), a third light-emitting layer (325-3, FIG. 2g), and a fourth light-emitting layer (327-3, FIG. 2i). In this case, the first light-emitting layer (321-4, FIG. 2c), the second light-emitting layer (323-3, FIG. 2e), and the fourth light-emitting layer (327-3, FIG. 2i) may be provided as blue light-emitting layers, and the third light-emitting layer (325-3, FIG. 2g) may be provided as a green light-emitting layer. However, the present invention is not limited thereto. For example, the first light-emitting layer (321-4, FIG. 2c), the second light-emitting layer (323-3, FIG. 2e), and the third light-emitting layer (325-3, FIG. 2g) may be provided as blue light-emitting layers, and the fourth light-emitting layer (327-3, FIG. 2i) may be provided as a green light-emitting layer. That is, the intermediate layer (320) may include at least one green light-emitting layer. By including a green light-emitting layer in the intermediate layer (320), the efficiency and lifespan of the light-emitting device (OLED1, OLED2, OLED3) including the intermediate layer (320) and the intermediate layer (320) may be improved.

[0079] In one embodiment, the first quantum dot layer (561) can convert light of a wavelength belonging to a first wavelength band that passes through into light of a wavelength belonging to a second wavelength band. For example, the first quantum dot layer (561) can convert light of a wavelength belonging to 450 nm to 495 nm that passes through into light of a wavelength belonging to 630 nm to 780 nm. Accordingly, light of a wavelength belonging to 630 nm to 780 nm can be emitted to the outside from the first pixel (PX1) through the second substrate (600). That is, the first quantum dot layer (561) can convert incident blue light (Lb) into red light (Lr). Of course, the present invention is not limited thereto, and the wavelength band to which the wavelength to which the first quantum dot layer (561) converts belongs and the wavelength band to which the wavelength after conversion belongs may be modified differently.

[0080] In one embodiment, the first quantum dot layer (561) may include first quantum dots (1152), first scatterers (1153), and a first polymer (1151). The first quantum dots (1152) and the first scatterers (1153) may be dispersed in the first polymer (1151).

[0081] The first quantum dots (1152) can be excited by blue light (Lb) and emit red light (Lr) having a wavelength longer than the wavelength of blue light (Lb) isotropically. The first polymer (1151) may be an organic material that is light-transmitting. The first scatterers (1153) can increase color conversion efficiency by scattering blue light (Lb) that is not absorbed by the first quantum dots (1152) so that more first quantum dots (1152) are excited.

[0082] In one embodiment, the first quantum dot layer (561) may include quantum dots (e.g., the first quantum dot (1152)). A quantum dot refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. The diameter of such quantum dots may be, for example, approximately 1 nm to 10 nm.

[0083] Quantum dots can be synthesized by wet chemical processes, organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy, or similar processes. A wet chemical process is a method of growing quantum dot crystals after mixing an organic solvent and a precursor material. In the case of wet chemical processes, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals during growth and controls crystal growth; therefore, it is easier than vapor deposition methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). Furthermore, wet chemical processes are low-cost processes that allow for the control of quantum dot particle growth.

[0084] These quantum dots may include group III-VI semiconductor compounds, group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0085] Examples of group III-VI semiconductor compounds may include binary compounds such as In2S3, ternary compounds such as AgInS, AgInS2, CuInS, or CuInS2, or any combination thereof.

[0086] Examples of group II-VI semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS, or ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS, or compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe. It may include four-element compounds or any combination thereof.

[0087] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, or GaAlNP; quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; or any combination thereof. Meanwhile, III-V semiconductor compounds may further include a Group II element. Examples of III-V semiconductor compounds containing additional group II elements may include InZnP, InGaZnP, or InAlZnP.

[0088] Examples of group III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, or InTe, ternary compounds such as InGaS3 or InGaSe3, or any combination thereof.

[0089] Examples of group I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2, or any combination thereof.

[0090] Examples of group IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe; or any combination thereof.

[0091] Group IV elements or compounds may include single-element compounds such as Si or Ge, binary compounds such as SiC or SiGe, or any combination thereof.

[0092] Each element contained in polyelement compounds, such as binary, ternary, and quaternary compounds, can exist within the particle at a uniform or non-uniform concentration.

[0093] Meanwhile, quantum dots can have a single structure in which the concentration of each element contained within the quantum dot is uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell may be different from each other. The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases towards the center.

[0094] Examples of the shell of a quantum dot include oxides of metals or nonmetals, semiconductor compounds, or combinations thereof. Examples of oxides of metals or nonmetals may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, or any combination thereof. Examples of semiconductor compounds may include group III-VI semiconductor compounds, group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, or any combination thereof as described above. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0095] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0096] In addition, the shape of the quantum dots can specifically be spherical, pyramidal, multi-arm, or cubic, and can be in the form of nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate particles.

[0097] By controlling the size of these quantum dots, the energy band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot emissive layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Additionally, the size of the quantum dots can be configured to emit white light by combining light of various colors.

[0098] The first quantum dot layer (561) may include scattering bodies (e.g., the first scattering body (1153)). Incident light may be scattered by the scattering bodies included in the first quantum dot layer (561), thereby allowing the incident light to be efficiently converted by quantum dots (e.g., the first quantum dot (1152)) within the first quantum dot layer (561). The scattering bodies are not particularly limited as long as they are materials capable of partially scattering transmitted light by forming an optical interface between the scattering bodies and the transparent resin. For example, the scattering bodies may be metal oxide particles or organic particles. Examples of metal oxides for scattering bodies include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of organic materials for scattering bodies include acrylic resin or urethane resin. The scatterers can scatter light in various directions regardless of the angle of incidence without substantially changing the wavelength of the incident light. Through this, the scatterers can improve the side visibility of the display device. In addition, the scatterers included in the first quantum dot layer (561) can increase the light conversion efficiency by increasing the probability that the incident light incident on the first quantum dot layer (561) meets the quantum dots.

[0099] The first quantum dot layer (561) may include a first polymer (1151). In this case, the first polymer (1151) may be a resin. Any material that is transparent and has excellent dispersion characteristics toward scatterers can be used as the resin included in the first quantum dot layer (561). For example, polymer resins such as acrylic resin, imide resin, epoxy resin, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane) can be used as the material for forming the first quantum dot layer (415).

[0100] In one embodiment, the second quantum dot layer (563) can convert light of a wavelength belonging to a first wavelength band that passes through into light of a wavelength belonging to a third wavelength band. For example, the second quantum dot layer (563) can convert light of a wavelength belonging to 450 nm to 495 nm that passes through into light of a wavelength belonging to 495 nm to 570 nm. Accordingly, light (Lg) of a wavelength belonging to 495 nm to 570 nm can be emitted to the outside through the second substrate (600) from the second pixel (PX2). That is, the second quantum dot layer (563) can convert incident blue light (Lb) into green light (Lg).

[0101] In one embodiment, the second quantum dot layer (563) may include second quantum dots (1162), second scatterers (1163), and a second polymer (1161). The second quantum dots (1162) and the second scatterers (1163) may be dispersed in the second polymer (1161).

[0102] The second quantum dots (1162) can be excited by blue light (Lb) and emit green light (Lg) having a wavelength longer than the wavelength of blue light (Lb) isotropically. The second polymer (1161) may be an organic material that is light-transmitting. The second scatterers (1163) can increase color conversion efficiency by scattering blue light (Lb) that is not absorbed by the second quantum dots (1162) so that more second quantum dots (1162) are excited.

[0103] The second quantum dot layer (563) may include quantum dots (e.g., the second quantum dot (1162)). A quantum dot refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. The diameter of such quantum dots may be, for example, approximately 1 nm to 10 nm. Since the description of the quantum dots included in the second quantum dot layer (563) described above may apply to the quantum dots included in the second quantum dot layer (563), the description of the quantum dots included in the second quantum dot layer (563) is omitted.

[0104] The second quantum dot layer (563) may include a scatterer (e.g., the second scatterer (1163)). By scattering incident light by the scatterer included in the second quantum dot layer (563), the incident light can be efficiently converted by quantum dots (e.g., the second quantum dot (1162)) within the second quantum dot layer (563). The scatterer is not particularly limited as long as it is a material capable of partially scattering transmitted light by forming an optical interface between the scatterer and the transparent resin. For example, the scatterer may be metal oxide particles or organic particles. Metal oxides for scatterers or organic materials for scatterers are as described above. The scatterer can scatter light in various directions regardless of the angle of incidence without substantially changing the wavelength of the incident light. Through this, the scatterer can improve the side visibility of the display device. In addition, the scattering body included in the second quantum dot layer (563) can increase the light conversion efficiency by increasing the probability that incident light incident on the second quantum dot layer (563) meets the quantum dots.

[0105] The second quantum dot layer (563) may include a second polymer (1161). In this case, the second polymer (1161) may be a resin. Any material that is transparent and has excellent dispersion properties for scatterers can be used as the resin included in the second quantum dot layer (563). For example, polymer resins such as acrylic resin, imide resin, epoxy resin, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane) can be used as the material for forming the second quantum dot layer (563).

[0106] In one embodiment, the light-transmitting layer (565) can transmit light of a wavelength belonging to a first wavelength band without wavelength conversion. For example, the light-transmitting layer (565) can transmit light of a wavelength belonging to 450 nm to 495 nm. Accordingly, in the third pixel (PX3), light (Lb) of a wavelength belonging to 450 nm to 495 nm can be emitted to the outside through the second substrate (600). That is, the light-transmitting layer (565) can transmit incident blue light (Lb) as blue light (Lb).

[0107] In one embodiment, the light-transmitting layer (565) may include third scatterers (1173) and a third polymer (1171). The third scatterers (1173) may be dispersed within the third polymer (1171). The third polymer (1171) may be an organic material having light transmittance, such as, for example, silicone resin or epoxy resin, and may be the same material as the first and second polymers (1151, 1161) described above. The third scatterers (1173) may scatter and emit blue light (Lb) and may be the same material as the first and second scattering particles (1153, 1163) described above.

[0108] In one embodiment, the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565) can each be formed within the openings (OP1, OP2, OP3) of the bank (500) through an inkjet printing method.

[0109] In one embodiment, a second substrate (600) may be disposed on the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565). A first color filter layer (581, FIG. 7) may be disposed between the first quantum dot layer (561) and the second substrate (600), a second color filter layer (583, FIG. 8) may be disposed between the second quantum dot layer (563) and the second substrate (600), and a third color filter layer (585, FIG. 9) may be disposed between the light-transmitting layer (565) and the second substrate (600). This will be described later in FIG. 7, FIG. 8, and FIG. 9.

[0110] The first substrate (100) and the second substrate (600) may each include glass, metal, or polymer resin. If the first substrate (100) and the second substrate (600) each have flexible or bendable properties, the first substrate (100) and the second substrate (600) may each include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, various modifications are possible, such as the first substrate (100) and the second substrate (600) each having a multilayer structure including two layers containing such polymer resins and a barrier layer containing inorganic materials such as silicon nitride (SiNx), silicon oxynitride (SiOxNy), or silicon oxide (SiOx) interposed between the layers.

[0111] In one embodiment, the display device (1) can be formed by a process of forming light-emitting elements (OLED1, OLED2, OLED3) on a first substrate (100), forming quantum dot layers / light-transmitting layers (561, 563, 565) on a second substrate (600), and then bonding the first substrate (100) on which the light-emitting elements (OLED1, OLED2, OLED3) are formed and the second substrate (600) on which the quantum dot layers / light-transmitting layers (561, 563, 565) are formed.

[0112] FIG. 4 is a schematic plan view of a display device according to one embodiment of the present invention. Specifically, FIG. 4 is a schematic plan view illustrating a part of a color panel (20, FIG. 2a).

[0113] Referring to FIG. 4, the color panel (20) may include a second substrate (600, FIG. 2a) and a bank (500). The bank (500) may be placed on the second substrate (600).

[0114] The bank (500) may include a plurality of openings. Specifically, the bank (500) may be defined with first openings (OP1), second openings (OP2), third openings (OP3), first dummy openings (DOP1), and second dummy openings (DOP2). The first dummy openings (DOP1) and second dummy openings (DOP2) defined in the bank (500) may be located around the first openings (OP1), second openings (OP2), and third openings (OP3) defined in the bank (500).

[0115] The first openings (OP1), second openings (OP2), third openings (OP3), first dummy openings (DOP1), and second dummy openings (DOP2) defined in the bank (500) may be located in the display area (DA, FIG. 1). However, the present invention is not limited thereto. For example, the first dummy openings (DOP1) and second dummy openings (DOP2) defined in the bank (500) may be located in the non-display area (NDA).

[0116] When viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (z direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in a rectangular shape. For example, when viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in a square or rectangular shape. However, the present invention is not limited thereto. When viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (z direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in various shapes such as circular, elliptical, triangular, or polygonal shapes.

[0117] Additionally, when viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the second dummy openings (DOP2) defined in the bank (500) may be provided in a polygonal shape. However, the present invention is not limited thereto.

[0118] In one embodiment, when viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the interior angles of each of the first openings (OP1), second openings (OP2), third openings (OP3), first dummy openings (DOP1), and second dummy openings (DOP2) may be obtuse. However, the present invention is not limited thereto.

[0119] In one embodiment, a first quantum dot layer (561) may be located within the first openings (OP1) of the bank (500). As described above, the first quantum dot layer (561) can convert light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) that passes through into light of a wavelength belonging to a second wavelength band (e.g., 630 nm to 780 nm).

[0120] In one embodiment, a second quantum dot layer (563) may be located within the second openings (OP2) of the bank (500). As described above, the second quantum dot layer (563) can convert light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) that passes through into light of a wavelength belonging to a third wavelength band (e.g., 495 nm to 570 nm).

[0121] In one embodiment, a light-transmitting layer (565) may be located within the third openings (OP3) of the bank (500). As described above, the light-transmitting layer (565) can emit light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) without wavelength conversion to the outside.

[0122] In one embodiment, a dummy layer (567) may be located within the first dummy openings (DOP1) of the bank (500). In one embodiment, the dummy layer (567) may contain the same material as the first quantum dot layer (561). For example, the dummy layer (567) may contain a material for forming the first quantum dot layer (561). In this case, the material for forming the first quantum dot layer (561) may include first quantum dots (1152), first scatterers (1153), and a first polymer (1151). However, the present invention is not limited thereto. The dummy layer (567) may contain the same material as the second quantum dot layer (563). For example, the dummy layer (567) may contain a material for forming the second quantum dot layer (563). At this time, the material for forming the second quantum dot layer (563) may include second quantum dots (1162), second scatterers (1163), and a second polymer (1161). Alternatively, the dummy layer (567) may include the same material as the light-transmitting layer (565). For example, the dummy layer (567) may include the material for forming the light-transmitting layer (565). At this time, the material for forming the light-transmitting layer (565) may include third scatterers (1173) and a third polymer (1171).

[0123] In one embodiment, the dummy layer (567) may include the same material as at least one of the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565). For example, the dummy layer (567) may include at least one of the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and the material for forming the light-transmitting layer (565).

[0124] As described above, the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565) can be formed by an inkjet printing method. Additionally, the dummy layer (567) can also be formed by an inkjet printing method.

[0125] At this time, during the process of dotting the material for forming the first quantum dot layer (561) using an inkjet printing method, the material may not be located within the first opening (OP1). That is, the material for forming the first quantum dot layer (561) may be dotted outside the first opening (OP1). At this time, when the material for forming the first quantum dot layer (561) is dotted on the bank (500), a bonding defect may occur during the bonding process of the first substrate (100) and the second substrate (600) due to the height of the material for forming the first quantum dot layer (561).

[0126] Additionally, during the process of dotting the material for forming the second quantum dot layer (563) using an inkjet printing method, the material may not be located within the second opening (OP2). At this time, when the material for forming the second quantum dot layer (563) is dotted on the bank (500), a bonding defect may occur during the bonding process of the first substrate (100) and the second substrate (600) due to the height of the material for forming the second quantum dot layer (563).

[0127] Additionally, during the process of dotting the material for forming the light-transmitting layer (565) using an inkjet printing method, the material may not be located within the third opening (OP3). At this time, due to the height of the material for forming the light-transmitting layer (565), a bonding defect may occur during the process of bonding the first substrate (100) and the second substrate (600).

[0128] In order to prevent or minimize the dotting (or, positioning) of the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) on the bank (500), first dummy openings (DOP1) and second dummy openings (DOP2) may be defined in the bank (500) of the display device according to one embodiment.

[0129] When first dummy openings (DOP1) and second dummy openings (DOP2) are defined in a bank (500), the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) may be dotted (or positioned) in the first dummy openings (DOP1) and second dummy openings (DOP2) defined in the bank (500), rather than being dotted (or positioned) on the bank (500). The dotting (or positioning) of the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) on the bank (500) may be prevented or minimized, thereby preventing or minimizing the occurrence of bonding defects during the bonding process of the first substrate (100) and the second substrate (600).

[0130] However, even if the first dummy openings (DOP1) and the second dummy openings (DOP2) are defined in the bank (500), some of the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) may still be dotted (or located) on the bank (500).

[0131] The material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) may be hydrophilic, and the bank (500) may be liquid-repellent. Since the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) is hydrophilic, the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565) may also be hydrophilic.

[0132] In one embodiment, a dummy layer (567) may be disposed within the first dummy openings (DOP1), and the dummy layer (567) may include at least one of a material for forming a first quantum dot layer (561), a material for forming a second quantum dot layer (563), and / or a material for forming a light-transmitting layer (565). Therefore, the dummy layer (567) may be hydrophilic.

[0133] The material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) and the dummy layer (567) that are dotted (or located) on the bank (500) having liquid-repellent properties are all hydrophilic, and since hydrophilic materials have the property of attracting each other, the dummy layer (567) located within the first dummy opening (DOP1) attracts (or absorbs) the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) that are dotted (or located) on the bank (500), thereby reducing the height of the material dotted (or located) on the bank (500), and thereby preventing or minimizing the occurrence of bonding defects during the bonding process of the first substrate (100) and the second substrate (600). At this time, the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) that are dotted (or located) on the upper surface of the bank (500) and the material having a difference in surface tension and hydrophilicity may attract each other, so that the material for forming the first quantum dot layer (561), the material for forming the second quantum dot layer (563), and / or the material for forming the light-transmitting layer (565) that are dotted (or located) on the bank (500) may be drawn (or absorbed) to the dummy layer (567) located in the first dummy opening (DOP1).

[0134] In one embodiment, the second dummy openings (DOP2) defined in the bank (500) may at least partially surround the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500). For example, the number of second dummy openings (DOP2) defined in the bank (500) may be greater than the number of openings of the first dummy openings (DOP1) defined in the bank (500). Additionally, the area (or width) of one of the second dummy openings (DOP2) may be smaller than the area (or width) of one of the first dummy openings (DOP1). Additionally, the area (or width) of one of the second dummy openings (DOP2) may be smaller than the area (or width) of one of the first openings (OP1).

[0135] During the manufacturing process of the color panel (20), a portion of the bank (500) may be unintentionally lost. For example, the bank (500) between the first opening (OP1) and the second dummy opening (DOP2) may be lost, and in this case, the first quantum dot layer (561) located within the first opening (OP1) may not be located within the first opening (OP1) but may flow out into the second dummy opening (DOP2). If the amount of the first quantum dot layer (561) flowing out into the second dummy opening (DOP2) becomes excessive, the first quantum dot layer (561) of sufficient thickness is not formed within the first opening (OP1), and this causes the corresponding pixel to become a defective pixel.

[0136] In one embodiment, the second dummy openings (DOP2) are arranged to be divided into small areas (or widths) and at least partially surround the first opening (OP1), so that even if the bank (500) between the second dummy opening (DOP2) and the first opening (OP1) is lost and the first quantum dot layer (561) within the first opening (OP1) flows out into the second dummy opening (DOP2), the amount of the first quantum dot layer (561) flowing out into the second dummy opening (DOP2) can be effectively prevented or minimized.

[0137] This applies to other openings as well. Even if a portion of the bank (500) located between the second opening (OP2) and the second dummy opening (DOP2) among the bank (500) is lost and the second quantum dot layer (563) inside the second opening (OP2) flows out into the second dummy opening (DOP2), the second dummy openings (DOP2) are divided into small areas (or widths) and arranged to surround at least part of the second opening (OP2), thereby effectively preventing or minimizing the amount of the second quantum dot layer (563) flowing out into the second dummy opening (DOP2) from becoming excessive.

[0138] As described above, a light-transmitting layer (565) may be located within the third opening (OP3). Even if a portion of the bank (500) located between the third opening (OP3) and the second dummy opening (DOP2) is lost and the light-transmitting layer (565) within the third opening (OP3) flows out into the second dummy opening (DOP2), the second dummy openings (DOP2) are divided into small areas (or widths) and arranged to surround at least a portion of the third opening (OP3), thereby effectively preventing or minimizing the amount of light-transmitting layer (565) flowing out into the second dummy opening (DOP2) from becoming excessive.

[0139] FIG. 5 is a schematic plan view of a display device according to an embodiment of the present invention. Specifically, the embodiment of FIG. 5 differs from the embodiment of FIG. 4 in that second dummy openings (DOP2) are not defined in the bank (500). In FIG. 5, the same reference numerals as in FIG. 4 refer to the same components, so their redundant descriptions will be omitted.

[0140] Referring to FIG. 5, the color panel (20) may include a second substrate (600, FIG. 2a) and a bank (500). The bank (500) may be placed on the second substrate (600).

[0141] The bank (500) may include a plurality of openings. Specifically, the bank (500) may have first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1). That is, the bank (500) may not have the second dummy openings (DOP2) described in FIG. 4 defined therein.

[0142] In this case, the width of the bank (500) between the first opening (OP1) and the second dummy opening (DOP2) can be increased so that the loss of the bank (500) between the first opening (OP1) and the second dummy opening (DOP2) can be prevented or minimized. This can be applied to other openings as well.

[0143] FIG. 6 is a schematic plan view of a display device according to an embodiment of the present invention. Specifically, the embodiment of FIG. 6 differs from the embodiment of FIG. 4 and FIG. 5 in that, when viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy opening (DOP1) defined in the bank (500) are provided in a polygonal shape. In FIG. 6, the same reference numerals as in FIG. 4 and FIG. 5 refer to the same components, so their redundant descriptions will be omitted.

[0144] Referring to FIG. 6, the color panel (20) may include a second substrate (600, FIG. 2a) and a bank (500). The bank (500) may be placed on the second substrate (600).

[0145] The bank (500) may include a plurality of openings. Specifically, the bank (500) may have first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1). That is, the bank (500) may not have the second dummy openings (DOP2) described in FIG. 4 defined therein.

[0146] When viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in a polygonal shape. For example, when viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in a hexagonal shape and / or an octagonal shape. However, the present invention is not limited thereto. When viewed from a direction perpendicular to the first substrate (100, FIG. 2a) (e.g., z-direction), the first openings (OP1), second openings (OP2), third openings (OP3), and first dummy openings (DOP1) defined in the bank (500) may be provided in various shapes such as pentagonal shapes, decagonal shapes, etc.

[0147] FIG. 7 is a schematic cross-sectional view of a display device according to one embodiment of the present invention, FIG. 8 is a schematic cross-sectional view of a display device according to one embodiment of the present invention, and FIG. 9 is a schematic cross-sectional view of a display device according to one embodiment of the present invention. Specifically, FIG. 7 to FIG. 9 are cross-sectional views schematically showing a color panel (20) of a display device, corresponding to cross-sectional views taken along the lines II-II', III-III', and IV-IV' of FIG. 4.

[0148] Referring to FIGS. 7, FIGS. 8, and FIGS. 9, a display device (1, FIG. 1) may include a color panel (20), and the color panel (20) may include a second substrate (600), color filter layers (581, 583, 585), a bank (500), quantum dot layers (561, 563), a light-transmitting layer (565), and a dummy layer (567).

[0149] In one embodiment, a bank (500) may be disposed on a second substrate (600). As described above, a first opening (OP1) and a second dummy opening (DOP2) may be defined in the bank (500). A first quantum dot layer (561) may be disposed in the first opening (OP1) defined in the bank (500).

[0150] A first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be disposed between the bank (500) and the second substrate (600). A fourth opening (OP4) may be defined in the second color filter layer (583), and a fifth opening (OP5) may be defined in the third color filter layer (585). The first color filter layer (581) may be located within the fifth opening (OP5) defined in the third color filter layer (585).

[0151] At least a portion of the first color filter layer (581) may be exposed through the fourth opening (OP4) defined in the second color filter layer (583). Additionally, at least a portion of the first color filter layer (581) may be exposed through the fifth opening (OP5) defined in the third color filter layer (585).

[0152] The fourth aperture (OP4) defined in the second color filter layer (583) and the fifth aperture (OP5) defined in the third color filter layer (585) may overlap at least partially with the first aperture (OP1) defined in the bank (500). By overlapping at least partially with the first aperture (OP1) defined in the bank (500), the light converted from the first quantum dot layer (561) may be incident on the first color filter layer (581), and the light that has passed through the first color filter layer (581) may be emitted toward the second substrate (600).

[0153] In one embodiment, a portion in which at least two of the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) overlap can function as a black matrix. For example, since the first color filter layer (581) allows only light of a wavelength belonging to the second wavelength band (e.g., 630 nm to 780 nm) to pass through, the second color filter layer (583) allows only light belonging to the third wavelength band (e.g., 495 nm to 570 nm) to pass through, and the third color filter layer (585) allows only light belonging to the first wavelength band (e.g., 450 nm to 495 nm) to pass through, light cannot pass through a portion in which at least two of the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) overlap.

[0154] In one embodiment, a first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be located between the second dummy opening (DOP2) defined in the bank (500) and the second substrate (600). Accordingly, light may not be emitted from the second substrate (600) that overlaps with the second dummy opening (DOP2) defined in the bank (500).

[0155] In one embodiment, a low-refractive index layer (591) and a first layer (593) may be interposed between the first quantum dot layer (561) and the first color filter layer (581). The low-refractive index layer (591) is a layer in which organic and inorganic materials are mixed and may have a refractive index of about 1.2. The first layer (593) is a layer provided to separate the low-refractive index layer (591) and the first quantum dot layer (561) and may have a refractive index of about 1.4 to about 1.6. The first layer (593) may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The first layer (593) may be provided with a thickness of about 4,000 angstroms (Å). However, the present invention is not limited thereto.

[0156] In FIG. 7, a low-refractive index layer (591) and a first layer (593) are shown interposed between the first quantum dot layer (561) and the first color filter layer (581), but the present invention is not limited thereto. At least one of the low-refractive index layer (591) and the first layer (593) may be omitted.

[0157] In one embodiment, a second layer (595) may be disposed on the first quantum dot layer (561). The second layer (595) is a layer for covering the first quantum dot layer (561) and may have a refractive index of about 1.4 to about 1.6. The second layer (595) may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The second layer (595) may be provided with a thickness of about 4,000 angstroms (Å). However, the present invention is not limited thereto.

[0158] Referring to FIG. 8, as described above, a second opening (OP2) may be defined in the bank (500). A second quantum dot layer (563) may be disposed in the second opening (OP2) defined in the bank (500).

[0159] A first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be disposed between the bank (500) and the second substrate (600). A sixth opening (OP6) may be defined in the first color filter layer (581), and a seventh opening (OP7) may be defined in the third color filter layer (585). A second color filter layer (583) may be located within the sixth opening (OP6) defined in the first color filter layer (581) and the seventh opening (OP7) defined in the third color filter layer (585).

[0160] At least a portion of the second color filter layer (583) may be exposed through the sixth opening (OP6) defined in the first color filter layer (581) and the seventh opening (OP7) defined in the third color filter layer (585).

[0161] The sixth aperture (OP6) defined in the first color filter layer (581) and the seventh aperture (OP7) defined in the third color filter layer (585) may overlap at least partially with the second aperture (OP2) defined in the bank (500). By overlapping at least partially with the sixth aperture (OP6) defined in the first color filter layer (581) and the seventh aperture (OP7) defined in the third color filter layer (585) and the second aperture (OP2) defined in the bank (500), light converted from the second quantum dot layer (563) can be incident on the second color filter layer (583).

[0162] In one embodiment, a low-refractive index layer (591) and a first layer (593) may be interposed between the second quantum dot layer (563) and the second color filter layer (583). Additionally, in one embodiment, a second layer (595) may be disposed on the second quantum dot layer (563). However, at least one of the low-refractive index layer (591), the first layer (593), and the second layer (595) may be omitted.

[0163] Referring to FIG. 9, as described above, a third opening (OP3), a first dummy opening (DOP1), and a second dummy opening (DOP2) may be defined in the bank (500). A light-transmitting layer (565) may be disposed in the third opening (OP3) defined in the bank (500), and a dummy layer (567) may be disposed in the first dummy opening (DOP1) defined in the bank (500). As described above, the dummy layer (567) may include the same material as the light-transmitting layer (565). However, the present invention is not limited thereto. The dummy layer (567) may include the same material as at least one of the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565).

[0164] A first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be disposed between the bank (500) and the second substrate (600). An eighth opening (OP8) may be defined in the first color filter layer (581), and a ninth opening (OP9) may be defined in the second color filter layer (583).

[0165] At least a portion of the third color filter layer (585) may be exposed through the eighth opening (OP8) defined in the first color filter layer (581) and the ninth opening (OP9) defined in the second color filter layer (583).

[0166] The eighth aperture (OP8) defined in the first color filter layer (581) and the ninth aperture (OP9) defined in the second color filter layer (583) may overlap at least partially with the third aperture (OP3) defined in the bank (500). By overlapping at least partially with the eighth aperture (OP8) defined in the first color filter layer (581) and the ninth aperture (OP9) defined in the second color filter layer (583) with the third aperture (OP3) defined in the bank (500), light passing through the light-transmitting layer (565) may be incident on the third color filter layer (585), and light passing through the third color filter layer (585) may be emitted toward the second substrate (600).

[0167] In one embodiment, a first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be located between the first dummy opening (DOP1) and the second substrate (600) defined in the bank (500) and between the second dummy opening (DOP2) and the second substrate (600). Accordingly, light may not be emitted to the second substrate (600) that overlaps with the first dummy opening (DOP1) and / or the second dummy opening (DOP2) defined in the bank (500). For example, even if a dummy layer (567) containing the same material as at least one of the first quantum dot layer (561), the second quantum dot layer (563), and the light-transmitting layer (565) is disposed in the first dummy opening (DOP1), since the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) are disposed between the dummy layer (567) and the second substrate (600), light may not be emitted to the second substrate (600) that overlaps with the dummy layer (567).

[0168] In one embodiment, a low-refractive index layer (591) and a first layer (593) may be interposed between the light-transmitting layer (565) and the third color filter layer (585). Additionally, in one embodiment, a second layer (595) may be disposed on the light-transmitting layer (565). However, at least one of the low-refractive index layer (591), the first layer (593), and the second layer (595) may be omitted.

[0169] FIG. 10 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention. Specifically, FIG. 10 is a cross-sectional view illustrating the display device (1) in a stacked order. In FIG. 10, the same reference numerals as in FIG. 4 to FIG. 9 refer to the same components, and their redundant descriptions will be omitted.

[0170] Referring to FIG. 10, the display device (1) may include a light-emitting panel (10) and a color panel (20). The light-emitting panel (10) may include a first substrate (100), a buffer layer (110), insulating layers (111, 113, 115), a thin-film transistor (TFT1, TFT2, TFT3), a light-emitting element (OLED1, OLED2, OLED3), and a pixel defining film (120). The color panel (20) may include a second substrate (600), color filter layers (581, 583, 585), quantum dot layers (561, 563), a light-transmitting layer (565), a dummy layer (567), and a bank (500).

[0171] A buffer layer (110) may be disposed on the first substrate (100). As previously described, the first substrate (100) may include glass, metal, or polymer resin. The buffer layer (110) may include inorganic materials such as silicon oxide, silicon nitride and / or silicon oxynitride. The buffer layer (110) may be disposed on the first substrate (100) to increase the smoothness of the upper surface of the first substrate (100) or to prevent or minimize the penetration of impurities from the lower surface of the first substrate (100) into the first to third thin-film transistors (TFT1, TFT2, TFT3).

[0172] In one embodiment, a first light-emitting element (OLED1) including a first pixel electrode (311), a second light-emitting element (OLED2) including a second pixel electrode (313), and a third light-emitting element (OLED3) including a third pixel electrode (315) may be disposed on a first substrate (100). Additionally, a first thin-film transistor (TFT1), a second thin-film transistor (TFT2), and a third thin-film transistor (TFT3) may be disposed on the first substrate (100).

[0173] The first thin-film transistor (TFT1) can be electrically connected to the first light-emitting element (OLED1), the second thin-film transistor (TFT2) can be electrically connected to the second light-emitting element (OLED2), and the third thin-film transistor (TFT3) can be electrically connected to the third light-emitting element (OLED3).

[0174] Hereinafter, the first thin-film transistor (TFT1) and the first light-emitting element (OLED1) will be described in detail. The second thin-film transistor (TFT2) and the third thin-film transistor (TFT3) may be provided similarly to the first thin-film transistor (TFT1), and the second light-emitting element (OLED2) and the third light-emitting element (OLED3) may be provided similarly to the first light-emitting element (OLED1).

[0175] First to third thin-film transistors (TFT1, TFT2, TFT3) may be disposed on the buffer layer (110). The first thin-film transistor (TFT1) may include a semiconductor layer (Act), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE).

[0176] The semiconductor layer (Act) may include polysilicon. Alternatively, the semiconductor layer (Act) may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The semiconductor layer (Act) may include a channel region and a drain region and a source region disposed on both sides of the channel region, respectively.

[0177] A first insulating layer (111) may be disposed on the semiconductor layer (Act). The first insulating layer (111) may be silicon oxide (SiO2) or silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO X It may include at least one of the following. In this case, zinc oxide (ZnO X) may be zinc oxide (ZnO), and / or zinc peroxide (ZnO2).

[0178] A gate electrode (GE) may be disposed on the first insulating layer (111). The gate electrode (GE) may overlap with the channel region. The gate electrode (GE) may include a low-resistance metal material. The gate electrode (GE) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials.

[0179] A second insulating layer (113) may be disposed on the gate electrode (GE). The second insulating layer (113) may be silicon oxide (SiO2) or silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO X It may include at least one of the following. In this case, zinc oxide (ZnO X ) may be zinc oxide (ZnO), and / or zinc peroxide (ZnO2).

[0180] A source electrode (SE) and a drain electrode (DE) may be disposed on the second insulating layer (113). The source electrode (SE) and the drain electrode (DE) may include a material with good conductivity. The source electrode (SE) and the drain electrode (DE) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials. For example, the source electrode (SE) and the drain electrode (DE) may have a multilayer structure of Ti / Al / Ti.

[0181] A third insulating layer (115) may be disposed on the source electrode (SE) and the drain electrode (DE). The third insulating layer (115) may include an organic insulating material. For example, the third insulating layer (115) may include an organic insulating material such as a general-purpose polymer like polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and blends thereof.

[0182] A first light-emitting element (OLED1), a second light-emitting element (OLED2), and a third light-emitting element (OLED3) may be located on the third insulating layer (115) of the first substrate (100). FIG. 10 illustrates that organic light-emitting elements are located on the third insulating layer (115) as the first to third light-emitting elements (OLED1, OLED2, OLED3). The first light-emitting element (OLED1) may be located in the first pixel (PX1), the second light-emitting element (OLED2) may be located in the second pixel (PX2), and the third light-emitting element (OLED3) may be located in the third pixel (PX3).

[0183] The first light-emitting element (OLED1) may include a first pixel electrode (311), a counter electrode (330), and an intermediate layer (320) interposed between the first pixel electrode (311) and the counter electrode (330). The second light-emitting element (OLED2) may include a second pixel electrode (313), a counter electrode (330), and an intermediate layer (320) interposed between the second pixel electrode (313) and the counter electrode (330). Additionally, the third light-emitting element (OLED3) may include a third pixel electrode (315), a counter electrode (330), and an intermediate layer (320) interposed between the third pixel electrode (315) and the counter electrode (330). In this case, the intermediate layer (320) may include a plurality of light-emitting layers.

[0184] A pixel defining film (120) may be disposed on the upper portion of the third insulating layer (115). This pixel defining film (120) may serve to define pixels by having an opening (120OP) corresponding to each pixel, that is, an opening (120OP) that exposes at least a portion of the first pixel electrode (311). For example, the first light-emitting element (OLED1) may have a first light-emitting region (EA1), and the first light-emitting region (EA1) of the first light-emitting element (OLED1) may be defined by the opening (120OP) of the pixel defining film (120). At this time, the first light-emitting region (EA1) may correspond to the light-emitting region of the light emitted from the first light-emitting element (OLED1).

[0185] The pixel defining film (120) can serve to define a pixel by having an opening (120OP) that exposes at least a portion of the second pixel electrode (313). For example, the second light-emitting element (OLED2) may have a second light-emitting region (EA2), and the second light-emitting region (EA2) of the second light-emitting element (OLED2) may be defined by the opening (120OP) of the pixel defining film (120). At this time, the second light-emitting region (EA2) may correspond to the light-emitting region of the light emitted from the second light-emitting element (OLED2).

[0186] The pixel defining film (120) can serve to define a pixel by having an opening (120OP) that exposes at least a portion of the third pixel electrode (315). For example, the third light-emitting element (OLED3) may have a third light-emitting region (EA3), and the third light-emitting region (EA3) of the third light-emitting element (OLED3) may be defined by the opening of the pixel defining film (120). At this time, the third light-emitting region (EA3) may correspond to the light-emitting region of the light emitted from the third light-emitting element (OLED3).

[0187] Additionally, the pixel defining film (120) can prevent arcs from occurring at the edges of the first pixel electrode (311) to the third pixel electrode (315) by increasing the distance between the edge of the first pixel electrode (311) and the counter electrode (330), the distance between the edge of the second pixel electrode (313) and the counter electrode (330), and the distance between the edge of the third pixel electrode (315) and the counter electrode (330).

[0188] The first pixel electrode (311) can be electrically connected to the first thin-film transistor (TFT1) through a contact hole defined in the third insulating layer (115), the second pixel electrode (313) can be electrically connected to the second thin-film transistor (TFT2) through a contact hole defined in the third insulating layer (115), and the third pixel electrode (315) can be electrically connected to the third thin-film transistor (TFT3) through a contact hole defined in the third insulating layer (115).

[0189] The first pixel electrode (311) includes a transparent conductive layer formed of a transparent conductive oxide such as ITO, In2O3, or IZO, and a reflective layer formed of a metal such as Al or Ag. For example, the first pixel electrode (311) may have a three-layer structure of ITO / Ag / ITO. The second pixel electrode (313) and the third pixel electrode (315) may be provided with the same material as the first pixel electrode (311).

[0190] An intermediate layer (320) may be disposed on the first pixel electrode (311), the second pixel electrode (313), and the third pixel electrode (315). As shown in FIG. 10, the intermediate layer (320) may be formed integrally over the first pixel electrode (311), the second pixel electrode (313), and the third pixel electrode (315). However, the present invention is not limited thereto. The intermediate layer (320) may be patterned and provided to correspond to each pixel electrode (311, 313, 315). The intermediate layer (320) may be provided with the structure described above in FIG. 2b to 2i. For example, the light-emitting layers (321-4, 323-3, 325-3, 327-3) of the intermediate layer (320) may be formed integrally over the first pixel electrode (311), the second pixel electrode (313), and the third pixel electrode (315). However, the present invention is not limited thereto. However, the present invention is not limited thereto. The light-emitting layers (321-4, 323-3, 325-3, 327-3) of the intermediate layer (320) may be patterned and provided to correspond to each pixel electrode (311, 313, 315).

[0191] A counter electrode (330) may be disposed on the intermediate layer (320). The counter electrode (330) may also be formed integrally over the first pixel electrode (311), the second pixel electrode (313), and the third pixel electrode (315). The counter electrode (330) may be made of a conductive material with a low work function. For example, the counter electrode (330) may include a (semi)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), ytterbium (Yb), or an alloy thereof. For example, the counter electrode (330) may be provided with AgMg or AgYb. Alternatively, the counter electrode (330) may further include a layer such as ITO, IZO, ZnO, or In2O3 on a (semi)transparent layer containing the aforementioned material.

[0192] The intermediate layer (320) can emit light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm). For example, light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) can be emitted from the light-emitting layers (321-4, 323-3, 325-3, 327-3) of the intermediate layer (320). However, the present invention is not limited thereto. Light of a wavelength belonging to a third wavelength band (e.g., 495 nm to 570 nm) can be emitted from one of the light-emitting layers (321-4, 323-3, 325-3, 327-3) of the intermediate layer (320), and light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) can be emitted from the others. However, even in this case, light of a wavelength belonging to the first wavelength range (e.g., 450 nm to 495 nm) may be emitted from the intermediate layer (320). Accordingly, light of a wavelength belonging to the first wavelength range (e.g., 450 nm to 495 nm) may be emitted from the first light-emitting element (OLED1), the second light-emitting element (OLED2), and the third light-emitting element (OLED3). However, the present invention is not limited thereto.

[0193] The pixel electrode (310) may be patterned to correspond to each pixel, and the intermediate layer (320) and the counter electrode (330) may be provided as a single unit across each pixel.

[0194] Since these organic light-emitting diodes can be easily damaged by external moisture or oxygen, an encapsulation layer (370) may be provided to cover and protect these organic light-emitting diodes as needed. The encapsulation layer (370) may be provided as a thin film encapsulation layer comprising at least one inorganic film layer and at least one organic film layer. In this case, the thin film encapsulation layer may include a first inorganic film layer, an organic film layer, and a second inorganic film layer that are sequentially stacked.

[0195] The first inorganic film layer can be placed directly on the counter electrode (330). The first inorganic film layer can prevent or minimize the penetration of external moisture or oxygen into the first light-emitting element (OLED1) to the third light-emitting element (OLED3).

[0196] The organic film layer can be placed directly on the first inorganic film layer. The organic film layer can provide a flat surface on the first inorganic film layer. Curvatures or particles formed on the upper surface of the first inorganic film layer can be covered by the organic film layer, thereby blocking the influence of the surface condition of the upper surface of the first inorganic film layer on the components formed on the organic film layer.

[0197] The second inorganic film layer may be placed directly on the organic film layer. The second inorganic film layer may prevent or minimize the release of moisture, etc., from the organic film layer to the outside. In one embodiment, the second inorganic film layer may be provided with a refractive index of about 1.6.

[0198] The first inorganic film layer and the second inorganic film layer may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The first inorganic film layer and the second inorganic film layer may be a single layer or a multilayer containing the aforementioned materials. The organic film layer may include a polymer-based material. Polymer-based materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic film layer may include acrylate.

[0199] A bank (500) may be disposed on the first light-emitting element (OLED1), the second light-emitting element (OLED2), and the third light-emitting element (OLED3). The bank (500) may include various materials capable of absorbing light. The bank (500) may include the same material as the pixel defining film (120). However, the present invention is not limited thereto. For example, the bank (500) may include a material different from the pixel defining film (120). For example, the bank (500) may include an opaque inorganic insulating material such as chromium oxide or molybdenum oxide, or an opaque organic insulating material such as black resin.

[0200] As described above, a first opening (OP1), a second opening (OP2), a third opening (OP3), a first dummy opening (DOP1), and a second dummy opening (DOP2) may be defined in the bank (500). The first opening (OP1) defined in the bank (500) may correspond to the first light-emitting region (EA1) of the first light-emitting element (OLED1), the second opening (OP2) defined in the bank (500) may correspond to the second light-emitting region (EA2) of the second light-emitting element (OLED2), and the third opening (OP3) defined in the bank (500) may correspond to the third light-emitting region (EA3) of the third light-emitting element (OLED3). That is, the first opening (OP1), the second opening (OP2), and the third opening (OP3) defined in the bank (500) can correspond to the opening (120OP) defined in the pixel defining film (120).

[0201] In one embodiment, the area of ​​the first opening (OP1) defined in the bank (500) may be larger than the area of ​​the opening (120OP) of the pixel defining film (120) defining the first light-emitting region (EA1). However, the present invention is not limited thereto. The area of ​​the first opening (OP1) defined in the bank (500) may be equal to or smaller than the area of ​​the opening (120OP) of the pixel defining film (120) defining the first light-emitting region (EA1).

[0202] In one embodiment, a first quantum dot layer (561) may be disposed within a first opening (OP1) defined in the bank (500), a second quantum dot layer (563) may be disposed within a second opening (OP2) defined in the bank (500), and a light-transmitting layer (565) may be disposed within a third opening (OP3) defined in the bank (500). Additionally, a dummy layer (567) may be disposed within a first dummy opening (DOP1) defined in the bank (500).

[0203] Since the first quantum dot layer (561) is disposed within the first opening (OP1) defined in the bank (500), the first quantum dot layer (561) may overlap at least partially with the first pixel electrode (311) of the first light-emitting element (OLED1). Since the second quantum dot layer (563) is disposed within the second opening (OP2) defined in the bank (500), the second quantum dot layer (563) may overlap at least partially with the second pixel electrode (313) of the second light-emitting element (OLED2). Additionally, since the light-transmitting layer (565) is disposed within the third opening (OP3) defined in the bank (500), the light-transmitting layer (565) may overlap at least partially with the third pixel electrode (315) of the third light-emitting element (OLED3).

[0204] However, the first dummy opening (DOP1) defined in the bank (500) may not overlap with the opening (120OP) defined in the pixel defining film (120). That is, the opening (120OP) defined in the pixel defining film (120) may not be located below the first dummy opening (DOP1).

[0205] Additionally, a pixel defining film (120), an intermediate layer (320), and a counter electrode (330) may be disposed below the dummy layer (567). That is, a pixel electrode (310) may not be disposed below the dummy layer (567). Therefore, since a pixel electrode (310) is not disposed below the dummy layer (567), light may not be emitted to the second substrate (600) that overlaps with the dummy layer (567). At this time, the intermediate layer (320) may include a plurality of light-emitting layers.

[0206] A first color filter layer (581) may be disposed on the first quantum dot layer (561). In the thickness direction (z direction) of the first substrate (100), the first pixel electrode (311) of the first light-emitting element (OLED1), the first quantum dot layer (561), and the first color filter layer (581) may overlap each other. The first light-emitting element (OLED1) can emit light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm), the first quantum dot layer (561) can convert light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) into light of a wavelength belonging to a second wavelength band (e.g., 630 nm to 780 nm), and the first color filter layer (581) can pass light of a wavelength belonging to a second wavelength band (e.g., 630 nm to 780 nm). Light of a first wavelength band (e.g., 450 nm to 495 nm) emitted from the first light-emitting element (OLED1) can be converted into light of a wavelength belonging to a second wavelength band (e.g., 630 nm to 780 nm) in the first quantum dot layer (561) and can be filtered through the first color filter layer (581). Accordingly, light of a wavelength belonging to the second wavelength band (e.g., 630 nm to 780 nm) can be emitted from the first pixel (PX1). That is, red light can be emitted from the first pixel (PX1). Since the light emitted from the first light-emitting element (OLED1) passes through the first quantum dot layer (561) and the first color filter layer (581), the color purity of the light emitted through the second substrate (600) can be improved. Specifically, light emitted from the first light-emitting element (OLED1) but not converted by the first quantum dot layer (561) is filtered by the first color filter layer (581), so the color purity of the light emitted through the second substrate (600) can be improved. In addition, the first color filter layer (581) absorbs external light, so external light reflection can be reduced.

[0207] A second color filter layer (583) may be disposed on the second quantum dot layer (563). The second pixel electrode (313) of the second light-emitting element (OLED2), the second quantum dot layer (563), and the second color filter layer (583) may overlap each other in the thickness direction (z direction) of the first substrate (100). The second light-emitting element (OLED2) can emit light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm), the second quantum dot layer (563) can convert light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) into light of a wavelength belonging to a third wavelength band (e.g., 495 nm to 570 nm), and the second color filter layer (583) can pass light of a wavelength belonging to a third wavelength band (e.g., 495 nm to 570 nm). Light of a first wavelength band (e.g., 450 nm to 495 nm) emitted from the second light-emitting element (OLED2) can be converted into light of a wavelength belonging to a third wavelength band (e.g., 495 nm to 570 nm) in the second quantum dot layer (563) and can be filtered through the second color filter layer (583). Accordingly, light of a wavelength belonging to the third wavelength band (e.g., 495 nm to 570 nm) can be emitted from the second pixel (PX2). That is, green light can be emitted from the second pixel (PX2). Since the light emitted from the second light-emitting element (OLED2) passes through the second quantum dot layer (563) and the second color filter layer (583), the color purity of the light emitted through the second substrate (600) can be improved. Specifically, light emitted from the second light-emitting element (OLED2) but not converted by the second quantum dot layer (563) is filtered by the second color filter layer (583), so the color purity of the light emitted through the second substrate (600) can be improved. In addition, the second color filter layer (583) absorbs external light, so external light reflection can be reduced.

[0208] A third color filter layer (585) may be disposed on the light-transmitting layer (565). The third pixel electrode (315) of the third light-emitting element (OLED3), the light-transmitting layer (565), and the third color filter layer (585) may overlap each other in the thickness direction (z direction) of the first substrate (100). The third light-emitting element (OLED3) may emit light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm), and the light-transmitting layer (565) and the third color filter layer (585) may allow light of a wavelength belonging to a first wavelength band (e.g., 450 nm to 495 nm) to pass through. Light of the first wavelength band (e.g., 450 nm to 495 nm) emitted from the third light-emitting element (OLED3) can pass through the light-transmitting layer (565) and can be filtered through the third color filter layer (585). Accordingly, light of a wavelength belonging to the first wavelength band (e.g., 450 nm to 495 nm) can be emitted from the third pixel (PX3). That is, blue light can be emitted from the third pixel (PX3). Since the light emitted from the third light-emitting element (OLED3) passes through the light-transmitting layer (565) and the third color filter layer (585), the color purity of the light emitted through the second substrate (600) can be improved. In addition, the second color filter layer (583) can absorb external light, thereby reducing external light reflection.

[0209] In one embodiment, a first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be disposed on the dummy layer (567). That is, all three color filter layers (581, 583, 585) may be disposed on the dummy layer (567). Therefore, light may not be emitted to the second substrate (600) that overlaps with the dummy layer (567).

[0210] Additionally, a pixel defining film (120), an intermediate layer (320), and a counter electrode (330) may be disposed below the second dummy opening (DOP2) defined in the bank (500). That is, a pixel electrode (310) may not be disposed below the second dummy opening (DOP2) defined in the bank (500). Therefore, light may not be emitted to the second substrate (600) that overlaps with the second dummy opening (DOP2) defined in the bank (500). Additionally, a first color filter layer (581), a second color filter layer (583), and a third color filter layer (585) may be disposed on the second dummy opening (DOP2) defined in the bank (500). That is, all three color filter layers (581, 583, 585) can be placed on the second dummy opening (DOP2) defined in the bank (500). Therefore, light may not be emitted from the second substrate (600) that overlaps with the second dummy opening (DOP2) defined in the bank (500). At this time, the intermediate layer (320) may include a plurality of light-emitting layers.

[0211] In one embodiment, at least two color filter layers may be superimposed between the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3). In FIG. 10, the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) are shown existing between the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3). As described above, these superimposed color filter layers can function as a black matrix.

[0212] A second substrate (600) may be disposed on the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585). Additionally, the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) may be overlapped and disposed between the second substrate (600) and the bank (500). By overlapping and disassembling the first color filter layer (581), the second color filter layer (583), and the third color filter layer (585) between the second substrate (600) and the bank (500), the step height between the second substrate (600) and the bank (500) can be maintained at a constant level.

[0213] In one embodiment, a filler material (400) may be interposed between the light-emitting panel (10) and the color panel (20). The filler material (400) may be a layer for bonding the light-emitting panel (10) and the color panel (20). Additionally, the filler material (400) may act as a buffer against external pressure, etc. In one embodiment, the filler material (400) may have a refractive index of about 1.5 to about 1.7. For example, the filler material (400) may have a refractive index of about 1.5 to about 1.6. Alternatively, the filler material (400) may have a refractive index of about 1.6 to about 1.7. When the filler material (400) has a refractive index of about 1.5 to about 1.7, the light extraction efficiency of the display device may be improved. In particular, if the filler material (400) has a refractive index of about 1.6 to about 1.7, the light extraction efficiency of the display device can be improved.

[0214] In one embodiment, a column spacer (450) may be disposed between the first substrate (100) and the second substrate (600). By disposing of the column spacer (450) between the first substrate (100) and the second substrate (600), the spacing between the first substrate (100) and the second substrate (600) can be maintained at a constant level. The column spacer (450) may overlap with the bank (500) and the pixel defining film (120).

[0215] In one embodiment, the column spacer (450) may be made of the same material as the bank (500). However, the present invention is not limited thereto. For example, the column spacer (450) may be made of a different material from the bank (500).

[0216] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0217] 1: Display device 10, 20: Luminous panel, Color panel 100, 600: 1st substrate, 2nd substrate 311, 313, 315: 1st pixel electrode, 2nd pixel electrode, 3rd pixel electrode 500: Bank 561, 563, 565, 567: First quantum dot layer, second quantum dot layer, light-transmitting layer, dummy layer 581, 583, 585: First color filter layer, second color filter layer, third color filter layer OP1, OP2, OP3: 1st opening, 2nd opening, 3rd opening DOP1, DOP2: 1st dummy opening, 2nd dummy opening

Claims

Claim 1 A display device comprising: a first substrate including a display area and a non-display area surrounding the display area; a bank disposed on the display area of ​​the first substrate, wherein first openings, second openings, third openings, first dummy openings, and second dummy openings are defined; a first quantum dot layer located within the first openings; a dummy layer located within the first dummy openings; and a pixel electrode located between the first substrate and the bank; wherein the first dummy openings do not overlap with the pixel electrode, and the second dummy openings are spaced apart from the first openings, the second openings, the third openings, and the first dummy openings. Claim 2 A display device according to claim 1, further comprising a second quantum dot layer located within the second openings. Claim 3 A display device according to paragraph 2, wherein the first quantum dot layer converts light of a wavelength belonging to a first wavelength band into light of a wavelength belonging to a second wavelength band, and the second quantum dot layer converts light of a wavelength belonging to a first wavelength band into light of a wavelength belonging to a third wavelength band. Claim 4 A display device according to paragraph 2, further comprising a light-transmitting layer located within the third openings and allowing incident light to pass through. Claim 5 A display device according to claim 4, wherein the dummy layer comprises the same material as at least one of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer. Claim 6 A display device according to claim 4, further comprising a second substrate located on the upper side of the first substrate such that the bank is positioned between them. Claim 7 A display device according to claim 6, further comprising: a first color filter layer located between the first quantum dot layer and the second substrate; a second color filter layer located between the second quantum dot layer and the second substrate; and a third color filter layer located between the light-transmitting layer and the second substrate. Claim 8 A display device according to claim 7, wherein the first color filter layer, the second color filter layer, and the third color filter layer are located between the dummy layer and the second substrate. Claim 9 A display device according to claim 1, wherein the dummy layer is hydrophilic and the bank is liquid-repellent. Claim 10 A display device according to claim 1, wherein the area of ​​one of the first dummy openings is larger than the area of ​​one of the second dummy openings. Claim 11 A display device according to claim 1, wherein the second dummy openings surround at least a portion of the first openings, the second openings, the third openings, and the first dummy openings. Claim 12 A display device according to claim 1, wherein the pixel electrode comprises a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged spaced apart from each other on the first substrate. Claim 13 A display device according to claim 12, wherein the first pixel electrode overlaps at least partially with the first aperture, the second pixel electrode overlaps at least partially with the second aperture, and the third pixel electrode overlaps at least partially with the third aperture. Claim 14 A display device according to claim 12, wherein the first pixel electrode, the second pixel electrode, and the third pixel electrode do not overlap with the first dummy openings. Claim 15 In paragraph 12, the first pixel electrode, the second pixel electrode, and the third pixel electrode do not overlap with the second dummy openings, in a display device. Claim 16 A display device further comprising: a pixel defining film covering the edges of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein the openings are defined to expose at least a portion of the first pixel electrode, at least a portion of the second pixel electrode, and at least a portion of the third pixel electrode; a light-emitting layer disposed on the first pixel electrode, the second pixel electrode, and the third pixel electrode and emitting light of a wavelength belonging to a first wavelength band; and a counter electrode disposed on the light-emitting layer. Claim 17 In paragraph 16, the light-emitting layer and the counter electrode overlap with the first dummy openings, a display device. Claim 18 In paragraph 16, the light-emitting layer and the counter electrode overlap with the second dummy openings, a display device. Claim 19 A display device comprising: a light-emitting panel comprising a first substrate including a display area and a non-display area around the display area and light-emitting elements disposed on the first substrate; and a second substrate and a color panel disposed on the second substrate and changing the wavelength of light emitted from the light-emitting panel; wherein the light-emitting panel further comprises a pixel electrode disposed on the first substrate; and the color panel further comprises a bank defined with first openings, second openings, third openings, first dummy openings, and second dummy openings, disposed on the display area of ​​the first substrate; a first quantum dot layer located within the first openings; and a dummy layer located within the first dummy openings; wherein the first dummy openings do not overlap with the pixel electrode, and the second dummy openings are spaced apart from the first openings, the second openings, the third openings, and the first dummy openings. Claim 20 In claim 19, the color panel further comprises a second quantum dot layer located within the second openings, a display device. Claim 21 In paragraph 20, the light-emitting panel is a display device that emits light of a wavelength belonging to a first wavelength band. Claim 22 A display device according to claim 21, wherein the first quantum dot layer converts light of a wavelength belonging to the first wavelength band passing through it into light of a wavelength belonging to the second wavelength band, and the second quantum dot layer converts light of a wavelength belonging to the first wavelength band passing through it into light of a wavelength belonging to the third wavelength band. Claim 23 In claim 21, the color panel further comprises a light-transmitting layer located within the third openings, and the light-transmitting layer transmits light of a wavelength belonging to the incident first wavelength band. Claim 24 A display device according to claim 23, wherein the dummy layer comprises the same material as at least one of the first quantum dot layer, the second quantum dot layer, and the light-transmitting layer. Claim 25 A display device according to claim 23, wherein the color panel further comprises: a first color filter layer located between the first quantum dot layer and the second substrate; a second color filter layer located between the second quantum dot layer and the second substrate; and a third color filter layer located between the light-transmitting layer and the second substrate. Claim 26 A display device according to claim 25, wherein the first color filter layer, the second color filter layer, and the third color filter layer are located between the dummy layer and the second substrate. Claim 27 In paragraph 25, the display device wherein the first color filter layer, the second color filter layer, and the third color filter layer overlap with the second dummy openings. Claim 28 In claim 19, the above-mentioned dummy layer is hydrophilic and the above-mentioned bank is liquid-repellent, a display device. Claim 29 In paragraph 19, the second dummy openings are a display device that at least partially surrounds the first openings, the second openings, the third openings, and the first dummy openings. Claim 30 A display device according to claim 19, wherein the color panel further comprises a column spacer located between the first substrate and the second substrate and overlapping with the bank.

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