Display apparatus

Abstract

The present invention relates to a display device capable of displaying a high-quality image, comprising: a first substrate; a pixel electrode disposed on the first substrate; a pixel defining film having a pixel opening that covers the edge of the pixel electrode and exposes the central portion of the pixel electrode; a light-emitting layer located on the pixel electrode and capable of emitting light of a wavelength belonging to a first wavelength band; a counter electrode located on the light-emitting layer; a second substrate located on the upper portion of the first substrate such that the counter electrode is positioned between them; a bank located on the lower surface of the second substrate in the direction of the first substrate and having a bank opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening; and a filter defining layer interposed between the bank and the second substrate and having a filter opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening, wherein at the portion of the counter electrode that overlaps with the pixel opening A display device is provided in which the distance from the upper surface in the direction of the second substrate to the lower surface in the direction of the first substrate of the bank is called the first distance, and the distance between the edge of the filter aperture and the edge of the pixel aperture when viewed from a direction perpendicular to the first substrate is called the second distance, wherein the second distance / first distance is 0.625 or greater and 1 or less.

Description

Technology Field

[0001] Embodiments of the present invention relate to a display device, and more specifically, to a display device capable of displaying high-quality images. Background Technology

[0002] A display device has multiple pixels. For a full-color display device, multiple pixels can emit light of different colors. To this end, at least some of the pixels of the display device have a color conversion unit. Accordingly, light of a first color generated from the light-emitting unit of some pixels is converted into light of a second color by passing through the corresponding color conversion unit and emitted externally. The problem to be solved

[0003] However, these conventional display devices had a problem in that they could not display high-quality images due to low light efficiency.

[0004] The present invention aims to solve various problems, including those mentioned above, by providing a display device capable of displaying high-quality images. However, these problems are exemplary and do not limit the scope of the present invention. means of solving the problem

[0005] According to one aspect of the present invention, the invention comprises: a first substrate; a pixel electrode disposed on the first substrate; a pixel defining film having a pixel opening that covers the edge of the pixel electrode and exposes the central portion of the pixel electrode; a light-emitting layer located on the pixel electrode and capable of emitting light of a wavelength belonging to a first wavelength band; a counter electrode located on the light-emitting layer; a second substrate located on the upper portion of the first substrate such that the counter electrode is positioned between them; a bank located on the lower surface of the second substrate in the direction of the first substrate and having a bank opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening; a quantum dot layer or a light-transmitting layer located within the bank opening; and a filter defining layer interposed between the bank and the second substrate and having a filter opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening. A display device is provided in which the distance from the upper surface in the direction of the second substrate at the portion overlapping with the pixel opening of the opposing electrode to the lower surface in the direction of the first substrate of the quantum dot layer or light-transmitting layer is called the first distance, and the distance between the edge of the filter opening and the edge of the pixel opening when viewed from a direction perpendicular to the first substrate is called the second distance, wherein the second distance / first distance is 0.625 or greater and 1 or less.

[0006] The above second distance may be constant along the edge of the pixel opening.

[0007] The above second distance may be 5 µm or more and 8 µm or less.

[0008] When viewed from a direction perpendicular to the first substrate, the area of ​​the bank opening may be greater than or equal to the area of ​​the filter opening.

[0009] If the distance between the edge of the bank opening and the edge of the pixel opening is defined as the third distance when viewed from a direction perpendicular to the first substrate, the third distance / first distance may be 0.75 or greater and 1.25 or less.

[0010] The above third distance may be constant along the edge of the pixel opening.

[0011] The above third distance may be 6 µm or more and 10 µm or less.

[0012] When viewed from a direction perpendicular to the first substrate, the area of ​​the bank opening may be larger than the area of ​​the filter opening.

[0013] If the distance between the edge of the bank opening and the edge of the pixel opening is defined as the third distance when viewed from a direction perpendicular to the first substrate, the third distance / first distance may be greater than 0.75 and less than or equal to 1.25.

[0014] The above third distance may be constant along the edge of the pixel opening.

[0015] The above third distance may be greater than 6 µm and less than or equal to 10 µm.

[0016] The above quantum dot layer can convert light of a wavelength belonging to a first wavelength band that passes through into light of a wavelength belonging to a second wavelength band.

[0017] A color filter layer that fills the filter opening and passes light of a wavelength belonging to the second wavelength band may be further provided.

[0018] The above second distance / first distance may be 0.75 or more and 1 or less.

[0019] The above second distance may be 6 µm or more and 8 µm or less.

[0020] According to one aspect of the present invention, the invention comprises: a first substrate; a pixel electrode disposed on the first substrate; a pixel defining film having a pixel opening that covers the edge of the pixel electrode and exposes the central portion of the pixel electrode; a light-emitting layer located on the pixel electrode and capable of emitting light of a wavelength belonging to a first wavelength band; a counter electrode located on the light-emitting layer; a second substrate located on the upper portion of the first substrate such that the counter electrode is positioned between them; a bank located on the lower surface of the second substrate in the direction of the first substrate and having a bank opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening; and a filter defining layer interposed between the bank and the second substrate and having a filter opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening, wherein when viewed from a direction perpendicular to the first substrate, the edge of the filter opening and the A display device is provided in which the distance between the edges of the pixel apertures is 5 µm or more and 8 µm or less.

[0021] The distance between the edge of the filter opening and the edge of the pixel opening may be constant along the edge of the pixel opening.

[0022] When viewed from a direction perpendicular to the first substrate, the area of ​​the bank opening may be greater than or equal to the area of ​​the filter opening.

[0023] When viewed from a direction perpendicular to the first substrate, the distance between the edge of the bank opening and the edge of the pixel opening may be 6 µm or more and 10 µm or less.

[0024] The distance between the edge of the bank opening and the edge of the pixel opening may be constant along the edge of the pixel opening.

[0025] When viewed from a direction perpendicular to the first substrate, the area of ​​the bank opening may be larger than the area of ​​the filter opening.

[0026] When viewed from a direction perpendicular to the first substrate, the distance between the edge of the bank opening and the edge of the pixel opening may be greater than 6 µm and less than or equal to 10 µm.

[0027] The distance between the edge of the bank opening and the edge of the pixel opening may be constant along the edge of the pixel opening.

[0028] The distance between the edge of the filter aperture and the edge of the pixel aperture may be 6 µm or more and 8 µm or less.

[0029] Other aspects, features, and advantages other than those described above will become clear from the following specific details, claims, and drawings for implementing the invention. Effects of the invention

[0030] According to one embodiment of the present invention as described above, a display device capable of displaying high-quality images can be implemented. Of course, the scope of the present invention is not limited by such effects. Brief explanation of the drawing

[0031] FIG. 1 is a plan view schematically illustrating a display device according to one embodiment of the present invention. FIG. 2 is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 3 is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 4 is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 5 is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 6 is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 7 is a cross-sectional view schematically illustrating a cross-section of the display device of FIG. 2 taken along the line I-I' of FIG. 2. Figure 8 is a plan view showing the relationship between the components of the display device of Figure 7. Figure 9 is a graph showing the color coordinate coverage rate according to the relationship between the components of the display device of Figure 7. Figure 10 is a graph showing relative brightness according to the relationship between the components of the display device of Figure 7. Figure 11 is a graph showing the lifespan of red pixels and blue pixels according to the relationship between the components of the display device of Figure 7. Figure 12 is a graph showing the color matching rate according to the relationship between the components of the display device of Figure 7. Specific details for implementing the invention

[0032] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0033] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0034] In the following embodiments, when various components such as layers, films, regions, and plates are described as being "on" another component, this includes not only cases where they are "directly on" another component, but also cases where other components are interposed between them. Furthermore, for convenience of explanation, the size of components in the drawings may be exaggerated or reduced. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and therefore the present invention is not necessarily limited to what is illustrated.

[0035] In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes in an orthogonal coordinate system and can be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they may also refer to different directions that are not orthogonal to each other.

[0036] FIG. 1 is a plan view schematically illustrating a display device according to one embodiment of the present invention. As shown in FIG. 1, the display device according to the present embodiment includes a display panel (10). Any display device that includes a display panel (10) is possible. For example, the display device may be various devices such as a smartphone, tablet, laptop, television, or billboard.

[0037] The display panel (10) includes a display area (DA) and a peripheral area (PA) located outside the display area (DA). In FIG. 1, the display area (DA) is shown as having a rectangular shape. However, the present invention is not limited thereto. The display area (DA) may have various shapes, such as a circle, an ellipse, a polygon, or a specific shape.

[0038] The display area (DA) is a portion that displays an image, and a plurality of pixels (PX) may be arranged therein. Each pixel (PX) may include a display element such as an organic light-emitting diode. Each pixel (PX) may emit light, for example, red, green, or blue. These pixels (PX) may be connected to a pixel circuit including a thin film transistor (TFT), a storage capacitor, etc. This pixel circuit may be connected to a scan line (SL) that transmits a scan signal, a data line (DL) that crosses the scan line (SL) and transmits a data signal, and a driving voltage line (PL) that supplies a driving voltage. The scan line (SL) may extend in the x direction, and the data line (DL) and the driving voltage line (PL) may extend in the y direction.

[0039] A pixel (PX) can emit light of a luminance corresponding to an electrical signal from an electrically connected pixel circuit. A display area (DA) can display a predetermined image through the light emitted from the pixel (PX). For reference, a pixel (PX) can be defined as an area that emits light of any one of red, green, and blue colors as described above.

[0040] The peripheral area (PA) is an area where pixels (PX) are not placed and may be an area that does not display an image. Power supply wiring for driving pixels (PX) may be located in the peripheral area (PA). Additionally, a printed circuit board including a driving circuit or a terminal section to which a driver IC is connected may be placed in the peripheral area (PA).

[0041] For reference, since the display panel (10) includes a first substrate (100), it may be said that the first substrate (100) has such a display area (DA) and a peripheral area (PA).

[0042] FIG. 2 is a plan view schematically illustrating a part of a display device according to an embodiment of the present invention. FIG. 2 may be a plan view illustrating an enlarged area A of FIG. 1.

[0043] As illustrated in FIG. 2, a display device may include a plurality of pixels (PX1, PX2, PX3). The pixels (PX1, PX2, PX3) may include a first pixel (PX1), a second pixel (PX2), and a third pixel (PX3) that emit light of different colors. The first pixel (PX1) may be a pixel that emits blue light, the second pixel (PX2) may be a pixel that emits red light, and the third pixel (PX3) may be a pixel that emits green light.

[0044] Each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may have a polygonal shape when viewed from a direction perpendicular to the first substrate (100) (z-axis direction). In FIG. 2, each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) is illustrated as having a rectangular shape, specifically a rectangular shape with rounded corners, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction). However, the present invention is not limited thereto. For example, each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may have a circular shape or an elliptical shape when viewed from a direction perpendicular to the first substrate (100) (z-axis direction). For reference, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the shape of each of the first pixel (PX1), second pixel (PX2), and third pixel (PX3) can be defined by the first color filter layer (810), second color filter layer (820), and / or third color filter layer (830) as described below. This will be described later.

[0045] The sizes, i.e., the areas, of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may differ from each other. For example, the area of ​​the second pixel (PX2) may be smaller than the area of ​​the first pixel (PX1) and the area of ​​the third pixel (PX3). However, the present invention is not limited thereto. For example, the areas of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be substantially the same. For reference, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the areas of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3), respectively, may be defined by the first color filter layer (810), the second color filter layer (820), and / or the third color filter layer (830) as described below. This will be described later.

[0046] The first pixel (PX1) may be provided with a first pixel electrode (311), the second pixel (PX2) may be provided with a second pixel electrode (312), and the third pixel (PX3) may be provided with a third pixel electrode (313). The pixel defining film (150) covers the edges of each of the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313). That is, the pixel defining film (150) may have an opening that exposes the center of the first pixel electrode (311), an opening that exposes the center of the second pixel electrode (312), and an opening that exposes the center of the third pixel electrode (313).

[0047] For reference, as shown in FIGS. 5 and 6, a column spacer (SP) may be positioned on the pixel defining film (150). This column spacer (SP) may serve to maintain a constant spacing between the laminate on the first substrate (100) and the laminate on the second substrate (900).

[0048] The first pixel (PX1) may include a light-transmitting layer (610, see FIG. 7) located above the first pixel electrode (311), the second pixel (PX2) may include a first quantum dot layer (620, see FIG. 7) located above the second pixel electrode (312), and the third pixel (PX3) may include a second quantum dot layer (630, see FIG. 7) located above the third pixel electrode (313). In FIG. 2, such a light-transmitting layer (610), the first quantum dot layer (620), and the second quantum dot layer (630), etc., have been omitted for convenience. These will be described later.

[0049] The first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) can be arranged in a Pentile arrangement. That is, assuming a virtual rectangle (VQ) centered on the center of the second pixel (PX2), the first pixel (PX1) can be placed at the first vertex (Q1), and the third pixel (PX3) can be placed at the second vertex (Q2) adjacent to the first vertex (Q1). Additionally, the first pixel (PX1) can be placed at the third vertex (Q3), which is symmetrical to the first vertex (Q1) with respect to the center of the virtual rectangle (VQ), and the third pixel (PX3) can be placed at the fourth vertex (Q4), which is symmetrical to the second vertex (Q2) with respect to the center of the virtual rectangle (VQ). This virtual rectangle (VQ) can be square in shape. The first pixel (PX1) and the third pixel (PX3) can be arranged alternately along the x-axis direction and the y-axis direction intersecting the x-axis direction. That is, a set of the first pixels (PX1), the second pixels (PX2), and the third pixels (PX3) arranged as shown in FIG. 2 can be positioned repeatedly in the x-axis direction and also repeatedly in the y-axis direction. Accordingly, the first pixel (PX1) can be surrounded by the second pixels (PX2) and the third pixels (PX3).

[0050] Of course, the present invention is not limited to the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) being arranged in a pentile manner. For example, as shown in FIG. 3, which is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention, the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be arranged in a stripe manner. That is, the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be arranged sequentially along the x-axis direction. Of course, alternatively, the pixels may also be arranged in a mosaic manner.

[0051] In addition, as shown in FIG. 4, which is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention, the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be arranged in an S-Stripe manner. In this case, the second pixel (PX2) and the third pixel (PX3) may be positioned alternately in the y-axis direction, and the pairs of the second pixel (PX2) and the third pixel (PX3) and the first pixel (PX1) may be positioned alternately in the x-axis direction.

[0052] Of course, the present invention is not limited thereto. For example, as shown in FIG. 5, which is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention, a first pixel (PX1), a second pixel (PX2), and a third pixel (PX3) may be arranged. The first pixel (PX1) may be a pixel that emits blue light, the second pixel (PX2) may be a pixel that emits red light, and the third pixel (PX3) may be a pixel that emits green light.

[0053] The sizes, i.e., the areas, of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may differ from one another. For example, the area of ​​the second pixel (PX2) may be larger than the area of ​​the first pixel (PX1) and the area of ​​the third pixel (PX3). However, the present invention is not limited thereto. For example, the areas of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be substantially the same. When viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the shape and area of ​​each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be defined by the first color filter layer (810), the second color filter layer (820), and / or the third color filter layer (830) as described below. This will be described later.

[0054] The first pixel (PX1) may be provided with a first pixel electrode (311), the second pixel (PX2) may be provided with a second pixel electrode (312), and the third pixel (PX3) may be provided with a third pixel electrode (313). The pixel defining film (150) covers the edges of each of the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313).

[0055] Assuming a virtual rectangle (VQ) centered on the center of the second pixel (PX2), the first pixel (PX1) may be placed at the first vertex (Q1), and the first pixel (PX1) may also be placed at the second vertex (Q2) adjacent to the first vertex (Q1). Additionally, the third pixel (PX3) may be placed at the third vertex (Q3), which is symmetrical to the first vertex (Q1) with respect to the center of the virtual rectangle (VQ), and the third pixel (PX3) may also be placed at the fourth vertex (Q4), which is symmetrical to the second vertex (Q2) with respect to the center of the virtual rectangle (VQ). This virtual rectangle (VQ) may have a rectangular shape. The first pixel (PX1) and the third pixel (PX3) may be arranged alternately along the x-axis direction. In the case of the row where the second pixel (PX2) is located, only the second pixels (PX2) may be arranged along the x-axis direction. Pixels emitting light of the same color may be arranged along the y-axis direction that intersects the x-axis direction. Accordingly, a column of third pixels (PX3) emitting green light, a column of second pixels (PX2) emitting red light, and a column of first pixels (PX1) emitting blue light may be arranged alternately along the x-axis direction.

[0056] In FIG. 5, the portion exposed by the pixel defining film (150) of each of the first pixel electrode (311) of the first pixel (PX1), the second pixel electrode (312) of the second pixel (PX2), and the third pixel electrode (313) of the third pixel (PX3) is illustrated as having a rectangular shape when viewed from a direction perpendicular to the first substrate (100), specifically a rectangular shape with rounded corners. However, the present invention is not limited thereto. For example, as shown in FIG. 6, which is a plan view schematically illustrating a part of a display device according to one embodiment of the present invention, the portion exposed by the pixel defining film (150) of each of the first pixel electrode (311) of the first pixel (PX1), the second pixel electrode (312) of the second pixel (PX2), and the third pixel electrode (313) of the third pixel (PX3) may have a square shape that is chamfered, that is, an octagonal shape. In this case, the degree of chamfering of the corners may differ. That is, the lengths of the sides of the octagon may not all be the same.

[0057] Of course, as described above, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the shape of each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) is defined by the first color filter layer (810), the second color filter layer (820), and / or the third color filter layer (830) as described below. Accordingly, the shape of each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3), defined by the first color filter layer (810), the second color filter layer (820), and / or the third color filter layer (830), may have a rectangular shape with a chamfered shape. In this case, the portion exposed by the pixel defining film (150) of each of the first pixel electrode (311) of the first pixel (PX1), the second pixel electrode (312) of the second pixel (PX2), and the third pixel electrode (313) of the third pixel (PX3) may be different from the shape of each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) defined by the first color filter layer (810), the second color filter layer (820), and / or the third color filter layer (830).

[0058] FIG. 7 is a cross-sectional view schematically illustrating a cross-section of the display device of FIG. 5 taken along the line I-I' of FIG. 2, and FIG. 8 is a plan view showing the relationship between the components of the display device of FIG. 7.

[0059] The display device according to the present embodiment comprises a first substrate (100), a first pixel electrode (311), a second pixel electrode (312), a third pixel electrode (313), a pixel defining film (150), an encapsulation layer (400), a second substrate (900), a bank (500), a light-transmitting layer (610), a first quantum dot layer (620), and a second quantum dot layer (630), etc.

[0060] The first substrate (100) may include glass, metal, or polymer resin. The first substrate (100) may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, the first substrate (100) may have a multilayer structure including two layers containing such polymer resins and a barrier layer containing an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, etc.) interposed between the layers, and various modifications are possible.

[0061] A first pixel electrode (311), a second pixel electrode (312), and a third pixel electrode (313) are located on the first substrate (100). Of course, in addition to the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313), a first thin-film transistor (210), a second thin-film transistor (220), and a third thin-film transistor (230) electrically connected to them may also be located on the first substrate (100). That is, as illustrated in FIG. 7, the first pixel electrode (311) may be electrically connected to the first thin-film transistor (210), the second pixel electrode (312) may be electrically connected to the second thin-film transistor (220), and the third pixel electrode (313) may be electrically connected to the third thin-film transistor (230). The first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313) may be located on the planarization layer (140) described later, which is located on the first substrate (100).

[0062] The first thin-film transistor (210) may include a first semiconductor layer (211) comprising amorphous silicon, polycrystalline silicon, an organic semiconductor material, or an oxide semiconductor material, a first gate electrode (213), a first source electrode (215a), and a first drain electrode (215b). The first gate electrode (213) may include various conductive materials and may have various layered structures, for example, may include a Mo layer and an Al layer. In this case, the first gate electrode (213) may have a Mo / Al / Mo layered structure. Alternatively, the first gate electrode (213) may include a TiNx layer, an Al layer, and / or a Ti layer. The first source electrode (215a) and the first drain electrode (215b) may also include various conductive materials and may have various layered structures, for example, may include a Ti layer, an Al layer, and / or a Cu layer. In this case, the first source electrode (215a) and the first drain electrode (215b) may have a layered structure of Ti / Al / Ti.

[0063] In FIG. 7, the first thin-film transistor (210) is shown having both a first source electrode (215a) and a first drain electrode (215b), but the present invention is not limited thereto. For example, the source region of the first semiconductor layer (211) of the first thin-film transistor (210) may be integral with the drain region of the semiconductor layer of another thin-film transistor, in which case the first thin-film transistor (210) may not have a first source electrode (215a). Meanwhile, the first source electrode (215a) and / or the first drain electrode (215b) may be part of the wiring.

[0064] In order to ensure insulation between the first semiconductor layer (211) and the first gate electrode (213), a gate insulating film (121) containing inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride may be interposed between the first semiconductor layer (211) and the first gate electrode (213). Additionally, an interlayer insulating film (131) containing inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed on the upper portion of the first gate electrode (213), and the first source electrode (215a) and the first drain electrode (215b) may be disposed on such an interlayer insulating film (131). Insulating films containing inorganic materials in this manner may be formed through CVD (chemical vapor deposition) or ALD (atomic layer deposition). This is also true for the embodiments and variations thereof described below.

[0065] A buffer layer (110) containing an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride may be interposed between the first thin-film transistor (210) of this structure and the first substrate (100). This buffer layer (110) may serve to increase the smoothness of the upper surface of the first substrate (100) or to prevent or minimize the penetration of impurities from the first substrate (100) into the first semiconductor layer (211) of the first thin-film transistor (210).

[0066] The second thin-film transistor (220) located in the second pixel (PX2) may include a second semiconductor layer (221), a second gate electrode (223), a second source electrode (225a), and a second drain electrode (225b). The third thin-film transistor (230) located in the third pixel (PX3) may include a third semiconductor layer (231), a third gate electrode (233), a third source electrode (235a), and a third drain electrode (235b). Since the structure of the second thin-film transistor (220) and the structure of the third thin-film transistor (230) are identical or similar to the structure of the first thin-film transistor (210) located in the first pixel (PX1), a description thereof is omitted.

[0067] A planarization layer (140) may be disposed on the first thin-film transistor (210). For example, as shown in FIG. 7, when a light-emitting element including a first pixel electrode (311) is disposed on the upper surface of the first thin-film transistor (210), the planarization layer (140) covering the first thin-film transistor (210) may have a roughly flat upper surface so that the first pixel electrode (311) of the light-emitting element, etc., can be positioned on the flat surface. This planarization layer (140) may include organic materials such as, for example, acrylic, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane). Although the planarization layer (140) is shown as a single layer in FIG. 7, various variations are possible, such as it being a multi-layer.

[0068] An organic light-emitting diode may be positioned in the first pixel (PX1), having a first pixel electrode (311), a counter electrode (305), and an intermediate layer (303) interposed between them and including a light-emitting layer. The first pixel electrode (311) may be electrically connected to the first thin-film transistor (210) by contacting either the first source electrode (215a) or the first drain electrode (215b) through a contact hole formed in the planarization layer (140), etc., as shown in FIG. 7. The first pixel electrode (311) may include a transparent conductive layer formed of a transparent conductive oxide such as ITO, In2O3, or IZO, and a reflective layer formed of a metal such as Al or Ag. For example, the first pixel electrode (311) may have a three-layer structure of ITO / Ag / ITO.

[0069] An organic light-emitting element having a second pixel electrode (312), a counter electrode (305), and an intermediate layer (303) interposed between them and including a light-emitting layer may be located in the second pixel (PX2). And an organic light-emitting element having a third pixel electrode (313), a counter electrode (305), and an intermediate layer (303) interposed between them and including a light-emitting layer may also be located in the third pixel (PX3). The second pixel electrode (312) is electrically connected to the second thin-film transistor (220) by contacting either the second source electrode (225a) or the second drain electrode (225b) through a contact hole formed in the planarization layer (140), etc. The third pixel electrode (313) is electrically connected to the third thin-film transistor (230) by contacting either the third source electrode (235a) or the third drain electrode (235b) through a contact hole formed in the planarization layer (140), etc. The description of the first pixel electrode (311) described above may be applied to the second pixel electrode (312) and the third pixel electrode (313).

[0070] As described above, the intermediate layer (303) including the light-emitting layer may be positioned not only on the first pixel electrode (311) of the first pixel (PX1) but also on the second pixel electrode (312) of the second pixel (PX2) and the third pixel electrode (313) of the third pixel (PX3). This intermediate layer (303) may have a shape that is integral across the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313). Of course, if necessary, the intermediate layer (303) may be patterned and positioned on the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313). The intermediate layer (303) may include, in addition to the light-emitting layer, a hole injection layer, a hole transport layer, and / or an electron transport layer as needed, and the layers included in this intermediate layer (303) may also have a shape that is integral across the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313). Of course, some of the layers included in the intermediate layer (303) may be patterned and positioned on the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313) as needed. The light-emitting layer included in the intermediate layer (303) may emit light of a wavelength belonging to a first wavelength band. The first wavelength band may be, for example, 450 nm to 495 nm.

[0071] Of course, the intermediate layer (303) may not include a single light-emitting layer but may include multiple light-emitting layers. For example, the intermediate layer (303) may have a structure in which a first light-emitting layer and a second light-emitting layer are stacked, and a charge-generating layer, etc. is interposed between the first light-emitting layer and the second light-emitting layer. In this case, a hole transport layer or an electron transport layer, etc. may be interposed between the first light-emitting layer and the charge-generating layer and between the second light-emitting layer and the charge-generating layer, respectively.

[0072] The counter electrode (305) on the intermediate layer (303) may also have a shape that is integral across the first pixel electrode (311) to the third pixel electrode (313). The counter electrode (305) may include a transparent conductive layer formed of ITO, In2O3, or IZO, and may also include a semipermeable film containing a metal such as Al, Li, Mg, Yb, or Ag. For example, the counter electrode (305) may be a semipermeable film containing MgAg, AgYb, Yb / MgAg, or Li / MgAg.

[0073] A pixel defining film (150) may be disposed on the upper portion of the flattening layer (140). This pixel defining film (150) has pixel openings corresponding to pixels. That is, the pixel defining film (150) covers the edges of each of the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313), and has a first pixel opening (151) that exposes the central portion of the first pixel electrode (311), a second pixel opening (152) that exposes the central portion of the second pixel electrode (312), and a third pixel opening (153) that exposes the central portion of the third pixel electrode (313). As illustrated in FIG. 7, the pixel defining film (150) can prevent arcs from occurring at the edges of the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313) by increasing the distance between the edges of the first pixel electrode (311), the second pixel electrode (312), and the third pixel electrode (313) and the opposing electrode (305). Such a pixel defining film (150) may include, for example, an organic material such as polyimide or HMDSO (hexamethyldisiloxane).

[0074] Organic light-emitting elements including a first pixel electrode (311), a second pixel electrode (312), and a third pixel electrode (313), an intermediate layer (303) including a light-emitting layer, and a counter electrode (305) can be easily degraded by moisture or oxygen. Therefore, to protect the organic light-emitting elements from moisture or oxygen from the outside, the display device may be provided with an encapsulation layer (400) covering the organic light-emitting elements.

[0075] The bag layer (400) may include at least one inorganic bag layer and at least one organic bag layer. For example, the bag layer (400) may include a first inorganic bag layer (410) and a second inorganic bag layer (430) and an organic bag layer (420) between them.

[0076] The first inorganic encapsulation layer (410) and the second inorganic encapsulation layer (430) are silicon oxide (SiO2) and silicon nitride (SiN x ), silicon oxynitride (SiO₂ x N y It may include one or more inorganic insulating materials such as aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2), and may be formed by chemical vapor deposition (CVD), etc. The organic encapsulation layer (420) may include a polymer-based material. Polymer-based materials may include silicone resin, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin, polyimide, and polyethylene.

[0077] The first inorganic encapsulation layer (410) formed by chemical vapor deposition has a roughly uniform thickness, so its upper surface is not flat as shown in FIG. 7. However, the organic encapsulation layer (420) has an upper surface that is roughly flat, and accordingly, the second inorganic encapsulation layer (430) on the organic encapsulation layer (420) can also have an upper surface that is roughly flat.

[0078] The second substrate (900) is positioned on top of the first substrate (100) such that the opposing electrode (305) is positioned between them. The second substrate (900) may include glass, metal, or polymer resin. The second substrate (900) may include, for example, a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, the second substrate (900) may have a multilayer structure including two layers containing such a polymer resin and a barrier layer containing an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride) interposed between the layers, and various other variations are possible.

[0079] The bank (500) is located on the lower surface of the second substrate (900) in the direction of the first substrate (100) (-Z direction). The bank (500) has a first bank opening (501), a second bank opening (502), and a third bank opening (503). The bank openings of the bank (500) can correspond to light-emitting elements. Specifically, the first bank opening (501) of the bank (500) corresponds to the first pixel opening (151) that exposes the first pixel electrode (311) of the pixel defining film (150), the second bank opening (502) of the bank (500) corresponds to the second pixel opening (152) that exposes the second pixel electrode (312) of the pixel defining film (150), and the third bank opening (503) of the bank (500) corresponds to the third pixel opening (153) that exposes the third pixel electrode (313) of the pixel defining film (150).

[0080] That is, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the first bank opening (501) of the bank (500) overlaps with the first pixel opening (151) that exposes the first pixel electrode (311) of the pixel defining film (150), the second bank opening (502) of the bank (500) overlaps with the second pixel opening (152) that exposes the second pixel electrode (312) of the pixel defining film (150), and the third bank opening (503) of the bank (500) overlaps with the third pixel opening (153) that exposes the third pixel electrode (313) of the pixel defining film (150). Accordingly, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the shape of the edge of each of the first bank opening (501) to the third bank opening (503) of the bank (500) may be identical or similar to the shape of the edge of the corresponding pixel opening of the pixel defining film (150). In this way, the first bank opening (501) of the bank (500) corresponds to the first pixel electrode (311), the second bank opening (502) of the bank (500) corresponds to the second pixel electrode (312), and the third bank opening (503) of the bank (500) corresponds to the third pixel electrode (313).

[0081] At this time, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the area of ​​the first bank opening (501) of the bank (500) is larger than the area of ​​the first pixel opening (151) of the pixel defining film (150), the area of ​​the second bank opening (502) of the bank (500) is larger than the area of ​​the second pixel opening (152) of the pixel defining film (150), and the area of ​​the third bank opening (503) of the bank (500) is larger than the area of ​​the third pixel opening (153) of the pixel defining film (150). Through this, light generated on the first pixel opening (151) of the pixel defining film (150) can be sufficiently incident into the first bank opening (501) of the bank (500), light generated on the second pixel opening (152) of the pixel defining film (150) can be sufficiently incident into the second bank opening (502) of the bank (500), and light generated on the third pixel opening (153) of the pixel defining film (150) can be sufficiently incident into the third bank opening (503) of the bank (500).

[0082] The bank (500) can be formed from various materials, such as organic materials like acrylic, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane). If necessary, the bank (500) may include a photoresist material, which allows the bank (500) to be easily formed through processes such as exposure and development. During the manufacturing process, the bank (500) is formed on the second substrate (900), and the light-transmitting layer (610), the first quantum dot layer (620), and the second quantum dot layer (630), which will be described later, are formed within the bank openings of the bank (500). Afterward, the first substrate (100) and the second substrate (900) are bonded together using a bonding member or the like. Since the bank (500) is formed on the second substrate (900) through processes such as exposure and development, the area of ​​the surface of the bank (500) in the direction of the first substrate (100) (-z direction) is larger than the area of ​​the surface of the second substrate (900) (+z direction). Accordingly, as shown in FIG. 7, the bank (500) may appear to have an inverted taper shape with respect to the second substrate (900) in the cross-sectional view.

[0083] In the first pixel (PX1), light of a wavelength belonging to the first wavelength band generated in the intermediate layer (303) including the light-emitting layer is passed through the encapsulation layer (400) without wavelength conversion and emitted to the outside. Accordingly, a light-transmitting layer (610) including a light-transmitting resin may be located within the first bank opening (501) of the bank (500) that overlaps with the first pixel electrode (311). Of course, depending on the case, the light-transmitting layer (610) may not exist within the first bank opening (501) of the bank (500), unlike what is shown in FIG. 7. The light-transmitting layer (610) may include a light-transmitting resin and a scatterer.

[0084] The scattering material included in the light-transmitting layer (610) is not particularly limited as long as it is a material capable of partially scattering transmitted light by forming an optical interface between the scattering material and the light-transmitting resin, for example, it may be a metal oxide particle or an organic particle. Examples of metal oxides for the scattering material include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of organic materials for the scattering material include acrylic resin or urethane resin. The scattering material can scatter light in various directions regardless of the angle of incidence without substantially changing the wavelength of the incident light. Through this, the scattering material can improve the side visibility of the display device.

[0085] The transparent resin included in the light-transmitting layer (610) can be any material that is transparent and has excellent dispersion characteristics for scatterers. For example, polymer resins such as acrylic resin, imide resin, epoxy resin, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane) can be used as the transparent resin included in the light-transmitting layer (610). The material for forming the light-transmitting layer (610), which is a mixture of such transparent resin and scatterer, can be positioned within the first bank opening (501) of the bank (500) that overlaps with the first pixel electrode (311) through an inkjet printing method.

[0086] A first quantum dot layer (620) may be located within the second bank opening (502) of the bank (500). This first quantum dot layer (620) may overlap with the second pixel electrode (312) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction). Since the first quantum dot layer (620) includes quantum dots capable of converting the wavelength of incident light, it can convert light of a wavelength belonging to a first wavelength band passing through the first quantum dot layer (620) into light of a wavelength belonging to a second wavelength band. The second wavelength band may be, for example, 625 nm to 780 nm. Of course, the present invention is not limited thereto, and the wavelength band to which the wavelength to which the first quantum dot layer (620) converts belongs and the wavelength band to which the wavelength after conversion belongs may be modified differently.

[0087] The first quantum dot layer (620) may have a form in which quantum dots are dispersed within a resin. In this embodiment, the embodiments described below and variations thereof, the quantum dots refer to crystals of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystals. The diameter of these quantum dots may be, for example, approximately 1 nm to 10 nm.

[0088] Quantum dots can be synthesized by wet chemical processes, organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy, or similar processes. A wet chemical process is a method of growing quantum dot crystals after mixing an organic solvent and a precursor material. In the case of wet chemical processes, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals during crystal growth and controls crystal growth, making it easier than vapor deposition methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). Furthermore, wet chemical processes are low-cost processes that allow for the control of quantum dot particle growth.

[0089] These quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0090] Examples of group II-VI semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS, or ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS, or compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe. It may include four-element compounds or any combination thereof.

[0091] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, or GaAlNP; quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; or any combination thereof. Meanwhile, III-V semiconductor compounds may further include a Group II element. Examples of III-V semiconductor compounds containing additional group II elements may include InZnP, InGaZnP, or InAlZnP.

[0092] Examples of group III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3, or InTe, ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, InGaS3, or InGaSe3, or any combination thereof.

[0093] Examples of group I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2, or any combination thereof.

[0094] Examples of group IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe; or any combination thereof.

[0095] Group IV elements or compounds may include single-element compounds such as Si or Ge, binary compounds such as SiC or SiGe, or any combination thereof.

[0096] Each element contained in polyelement compounds, such as binary, ternary, and quaternary compounds, can exist within the particle at a uniform or non-uniform concentration.

[0097] Meanwhile, quantum dots can have a single structure in which the concentration of each element contained within the quantum dot is uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell may be different from each other. The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases towards the center.

[0098] Examples of the shell of the quantum dot include oxides of metals or nonmetals, semiconductor compounds, or combinations thereof. Examples of oxides of metals or nonmetals may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, or any combination thereof. Examples of semiconductor compounds may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, or any combination thereof as described above. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0099] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0100] In addition, the shape of the quantum dots can specifically be spherical, pyramidal, multi-arm, or cubic, and can be in the form of nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate particles.

[0101] By controlling the size of these quantum dots, the energy band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot emissive layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Additionally, the size of the quantum dots can be configured to emit white light by combining light of various colors.

[0102] The first quantum dot layer (620) may include a scatterer. Incident light can be scattered by the scatterer included in the first quantum dot layer (620) so that the incident light is efficiently converted by quantum dots within the first quantum dot layer (620). The scatterer is not particularly limited as long as it is a material capable of partially scattering transmitted light by forming an optical interface between the scatterer and the transparent resin. The above description may apply to the scatterer material included in the light-transmitting layer (610) for the scatterer material included in the first quantum dot layer (620). Such a scatterer can scatter light in various directions regardless of the angle of incidence without substantially changing the wavelength of the incident light. Through this, the scatterer can improve the side visibility of the display device. In addition, the scatterer included in the first quantum dot layer (620) can increase the light conversion efficiency by increasing the probability that incident light incident on the first quantum dot layer (620) meets the quantum dots.

[0103] Any material that is transparent and has excellent dispersion characteristics for scatterers can be used as the resin included in the first quantum dot layer (620). For example, polymer resins such as acrylic resin, imide resin, epoxy resin, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane) can be used as the material for forming the first quantum dot layer (620). The material for forming the first quantum dot layer (620) including such resin and scatterers can be positioned within the second bank opening (502) of the bank (500) that overlaps with the second pixel electrode (312) through an inkjet printing method.

[0104] A second quantum dot layer (630) may be located within the third bank opening (503) of the bank (500). This second quantum dot layer (630) may overlap with the third pixel electrode (313) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction).

[0105] Since the second quantum dot layer (630) includes quantum dots capable of converting the wavelength of incident light, it can convert light of a wavelength belonging to a first wavelength band passing through the second quantum dot layer (630) into light of a wavelength belonging to a third wavelength band. The third wavelength band may be, for example, 495 nm to 570 nm. Of course, the present invention is not limited thereto, and the wavelength band to which the wavelength to which the second quantum dot layer (630) converts belongs and the wavelength band to which the wavelength after conversion belongs may be modified differently.

[0106] The second quantum dot layer (630) may have a form in which quantum dots are dispersed within a resin. In this embodiment, the embodiments described below, and variations thereof, the quantum dots refer to crystals of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystals. The diameter of these quantum dots may be, for example, approximately 1 nm to 10 nm. Since the description of the quantum dots included in the first quantum dot layer (620) described above may apply to the quantum dots included in the second quantum dot layer (630), the description of the quantum dots included in the second quantum dot layer (630) is omitted.

[0107] The second quantum dot layer (630) may include a scatterer. Incident light can be scattered by the scatterer included in the second quantum dot layer (630), thereby allowing the incident light to be efficiently converted into quantum dots within the second quantum dot layer (630). The scatterer is not particularly limited as long as it is a material capable of partially scattering transmitted light by forming an optical interface between the scatterer and the transparent resin, for example, it may be a metal oxide particle or an organic particle. The metal oxide or organic material for the scatterer is as described above. The scatterer can scatter light in various directions regardless of the angle of incidence without substantially changing the wavelength of the incident light. Through this, the scatterer can improve the side visibility of the display device. In addition, the scatterer included in the second quantum dot layer (630) can increase the light conversion efficiency by increasing the probability that the incident light incident on the second quantum dot layer (630) meets the quantum dots.

[0108] Any material that is transparent and has excellent dispersion characteristics for scatterers can be used as the resin included in the second quantum dot layer (630). For example, polymer resins such as acrylic resin, imide resin, epoxy resin, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane) can be used as the material for forming the second quantum dot layer (630). The material for forming the second quantum dot layer (630) including such resin and scatterers can be positioned within the third bank opening (503) of the bank (500) that overlaps with the third pixel electrode (313) through an inkjet printing method.

[0109] The surface of the bank (500) in the direction of the first substrate (100) (-z direction), the surface of the light-transmitting layer (610) in the direction of the first substrate (100) (-z direction), the surface of the first quantum dot layer (620) in the direction of the first substrate (100) (-z direction), and the surface of the second quantum dot layer (630) in the direction of the first substrate (100) (-z direction) can be covered by a protective layer (510). The protective layer (510) can serve to protect the light-transmitting layer (610), the first quantum dot layer (620), and the second quantum dot layer (630). This protective layer may include inorganic materials such as silicon nitride, silicon oxide, or silicon oxynitride.

[0110] Color filter layers may be located between the light-transmitting layer (610), the first quantum dot layer (620), the second quantum dot layer (630), and the second substrate (900). A first color filter layer (810) may be located on top of the light-transmitting layer (610), a second color filter layer (820) may be located on top of the first quantum dot layer (620), and a third color filter layer (830) may be located on top of the second quantum dot layer (630). The first color filter layer (810) may be a layer that allows only light of wavelengths belonging to 450 nm to 495 nm to pass through. The second color filter layer (820) may be a layer that allows only light of wavelengths belonging to 625 nm to 780 nm to pass through. The third color filter layer (830) may be a layer that allows only light of wavelengths ranging from 495 nm to 570 nm to pass through.

[0111] These first color filter layers (810) to third color filter layers (830) can increase the color purity of light emitted to the outside, thereby improving the quality of the displayed image. Additionally, the first color filter layers (810) to third color filter layers (830) can reduce external light reflection by lowering the ratio of external light incident on the display device from the outside that is reflected from the first pixel electrode (311) to the third pixel electrode (313) and then emitted back to the outside. A black matrix may be positioned between the first color filter layers (810) to the third color filter layers (830) as needed.

[0112] The first color filter layer (810) has a second filter opening (802) corresponding to the first quantum dot layer (620) as illustrated in FIG. 7. This second filter opening (802) of the first color filter layer (810) can serve to define the area of ​​the second pixel (PX2). That is, the shape and size of the second pixel (PX2) when viewed from a direction perpendicular to the substrate (100) can be defined by the second filter opening (802) of the first color filter layer (810). The second color filter layer (820) fills at least the second filter opening (802) of the first color filter layer (810).

[0113] Additionally, the first color filter layer (810) has a third filter opening (803) corresponding to the second quantum dot layer (630) as illustrated in FIG. 7. This third filter opening (803) of the first color filter layer (810) can serve to define the area of ​​the third pixel (PX3). That is, the shape and size of the third pixel (PX3) when viewed from a direction perpendicular to the substrate (100) can be defined by the third filter opening (803) of the first color filter layer (810). The third color filter layer (830) fills at least the third filter opening (803) of the first color filter layer (810).

[0114] Meanwhile, the third color filter layer (830) has a first filter opening (801) corresponding to the light-transmitting layer (610). This first filter opening (801) of the third color filter layer (830) can serve to define the area of ​​the first pixel (PX1). That is, the shape and size of the first pixel (PX1) when viewed from a direction perpendicular to the substrate (100) can be defined by the first filter opening (801) of the third color filter layer (830). The first color filter layer (810) fills at least the first filter opening (801) of the third color filter layer (830).

[0115] As such, since the first color filter layer (810) defines the area of ​​the second pixel (PX2) and the area of ​​the third pixel (PX3) through the second filter aperture (802) and the third filter aperture (803), the first color filter layer (810) can be called a filter definition layer for the second pixel (PX2) and the third pixel (PX3). Similarly, since the third color filter layer (830) defines the area of ​​the first pixel (PX1) through the first filter aperture (801), the third color filter layer (830) can be called a filter definition layer for the first pixel (PX1). Of course, such a filter definition layer can also be called a pixel area definition layer.

[0116] At this time, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the area of ​​the first filter opening (801) of the third color filter layer (830) is larger than the area of ​​the first pixel opening (151) of the pixel defining film (150), the area of ​​the second filter opening (802) of the first color filter layer (810) is larger than the area of ​​the second pixel opening (152) of the pixel defining film (150), and the area of ​​the third filter opening (803) of the first color filter layer (810) is larger than the area of ​​the third pixel opening (153) of the pixel defining film (150). Through this, light generated on the first pixel opening (151) of the pixel defining film (150) can be sufficiently incident into the first filter opening (801) of the third color filter layer (830), light generated on the second pixel opening (152) of the pixel defining film (150) can be sufficiently incident into the second filter opening (802) of the first color filter layer (810), and light generated on the third pixel opening (153) of the pixel defining film (150) can be sufficiently incident into the third filter opening (803) of the first color filter layer (810).

[0117] Meanwhile, the part where two or more color filter layers overlap can function like a black matrix. For example, if the first color filter layer (810) passes only light with wavelengths ranging from 450 nm to 495 nm and the second color filter layer (820) passes only light with wavelengths ranging from 625 nm to 780 nm, then in the part where the first color filter layer (810) and the second color filter layer (820) overlap, there is theoretically no light that can pass through both the first color filter layer (810) and the second color filter layer (820). Of course, by ensuring that there is an overlapping portion of the first color filter layer (810), the second color filter layer (820), and the third color filter layer (830) between the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3), the color filters between the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) can be made to clearly function as a black matrix.

[0118] A low refractive index layer (700) may be positioned between the first color filter layer (810), the second color filter layer (820), and the third color filter layer (830), and between the bank (500), the light-transmitting layer (610), the first quantum dot layer (620), and the second quantum dot layer (630). During the manufacturing process, this low refractive index layer (700) may cover the first color filter layer (810), the second color filter layer (820), and the third color filter layer (830), and may form the bank (500), etc., on the upper surface thereof. Such a low refractive index layer (700) may include inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., and may be formed by the CVD method.

[0119] The first substrate (100) and the second substrate (900) can be bonded with a bonding member, such as a sealant, outside the display area. At this time, a filler material (520) may be filled between the laminate on the first substrate (100) and the laminate on the second substrate (900) as needed. For example, a filler material (520) may be filled between the encapsulation layer (400) and the protection layer (510). Such a filler material may include a resin such as acrylic or epoxy.

[0120] In the display device according to the present embodiment, the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the portion overlapping with the first pixel opening (151) of the opposing electrode (305) to the lower surface in the direction of the first substrate (100) of the light-transmitting layer (610) is called the first distance (d1), and the distance between the edge of the first filter opening (801) and the edge of the first pixel opening (151) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the second distance (d2). The value obtained by dividing the second distance (d2) by the first distance (d1) is 0.625 or greater and 1 or less.

[0121] FIG. 9 is a graph showing the color coordinate coverage rate according to the relationship between the components of the display device of FIG. 7. Specifically, it is a graph showing the ratio of the area occupied by the colors that the display device can express on the BT.2020 diagram. The BT.2020 diagram is a color coordinate diagram published by the International Telecommunication Union (ITU). The higher the ratio of the area occupied by the colors that the display device can express on the BT.2020 diagram, the more the display device can implement the various colors included in the BT.2020 diagram. In FIG. 9, the horizontal axis is the second distance (d2), and the unit is μm. In FIG. 9, the vertical axis is the ratio of the area occupied by the colors that the display device can express on the BT.2020 diagram. At this time, the first distance (d1) is 8 μm.

[0122] As can be seen in FIG. 9, when the second distance (d2) is less than 5 µm, the color coordinate coverage rate of the display device begins to decrease rapidly. This means that when the second distance (d2) is less than 5 µm, the diversity of colors that the display device can express decreases rapidly. Therefore, in a situation where the first distance (d1) is 8 µm, the second distance (d2) needs to be 5 µm or more. If the first distance (d1) changes, the second distance (d2), at which the color coordinate coverage rate of the display device decreases rapidly, also changes. Therefore, by making the value obtained by dividing the second distance (d2) by the first distance (d1) 0.625 or more, the efficiency of the display device can be increased regardless of the first distance (d1).

[0123] Meanwhile, as can be seen in FIG. 9, when the second distance (d2) is between 5 µm and 8 µm, it can be seen that the color coordinate coverage rate of the display device is maintained at a constant level. This means that by making the second distance (d2) between 5 µm and 8 µm, a display device of uniform quality can be realized. Therefore, in a situation where the first distance (d1) is 8 µm, the second distance (d2) needs to be 8 µm or less. When the first distance (d1) changes, the second distance (d2), which causes the degree of improvement in the efficiency of the display device to decrease rapidly, also changes. Therefore, by making the value obtained by dividing the second distance (d2) by the first distance (d1) 1 or less, the efficiency of the display device can be increased regardless of the first distance (d1).

[0124] FIG. 10 is a graph showing relative brightness according to the relationship between the components of the display device of FIG. 7. In FIG. 10, the horizontal axis represents the second distance (d2), and the unit is μm. In FIG. 10, the vertical axis represents the relative brightness in front of the display device, and the relative brightness in front of the display device when the second distance (d2) is 8 μm is represented as 100%. At this time, the first distance (d1) is 8 μm.

[0125] As can be seen in FIG. 10, when the second distance (d2) is less than 6 µm, the rate of brightness degradation in front of the display device begins to increase. This means that when the second distance (d2) is less than 6 µm, the efficiency of the display device may decrease rapidly. Therefore, in a situation where the first distance (d1) is 8 µm, it may be desirable for the second distance (d2) to be 6 µm or more. When the first distance (d1) changes, the second distance (d2), at which the efficiency of the display device decreases rapidly, also changes. Therefore, by making the value obtained by dividing the second distance (d2) by the first distance (d1) 0.75 or more, the efficiency of the display device can be further increased regardless of the first distance (d1).

[0126] Meanwhile, as can be seen in FIG. 10, it can be observed that the brightness in front of the display device increases as the second distance (d2) increases. However, if the second distance (d2) exceeds 8 µm, the degree of brightness improvement begins to decrease rapidly. This can be confirmed by the change in the slope of the graph in FIG. 10. Therefore, in a situation where the first distance (d1) is 8 µm, the second distance (d2) needs to be 8 µm or less. When the first distance (d1) changes, the second distance (d2), at which the degree of efficiency improvement of the display device decreases rapidly, also changes. Therefore, by making the value obtained by dividing the second distance (d2) by the first distance (d1) 1 or less, the efficiency of the display device can be increased regardless of the first distance (d1).

[0127] FIG. 11 is a graph showing the lifespan of red and blue pixels according to the relationship between the components of the display device of FIG. 7. In FIG. 11, the horizontal axis represents the second distance (d2), with a unit of μm. In FIG. 11, the vertical axis represents the lifespan of the pixel, with a unit of thousands of hours. At this time, the first distance (d1) is 8 μm.

[0128] As can be seen in FIG. 11, it can be seen that the lifespan of red and blue pixels decreases as the second distance (d2) increases. In particular, when the second distance (d2) exceeds 8 µm, the lifespan of red and blue pixels becomes less than 30,000 hours. The standard lifespan of pixels in a display device is 30,000 hours. Therefore, in a situation where the first distance (d1) is 8 µm, the second distance (d2) needs to be 8 µm or less. If the first distance (d1) changes, the second distance (d2), which lowers the lifespan of the pixels in the display device to less than 30,000 hours, also changes. Therefore, by making the value obtained by dividing the second distance (d2) by the first distance (d1) 1 or less, the efficiency of the display device can be increased regardless of the first distance (d1).

[0129] Up until now, it has been explained that the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the first pixel opening (151) of the opposing electrode (305) to the lower surface in the direction of the first substrate (100) of the light-transmitting layer (610) is called the first distance (d1), and the distance between the edge of the first filter opening (801) and the edge of the first pixel opening (151) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the second distance (d2). The value obtained by dividing the second distance (d2) by the first distance (d1) must be 0.625 or greater and 1 or less, and more preferably 0.75 or greater and 1 or less. This can be applied in the same way to the second pixel (PX2) and the third pixel (PX3).

[0130] That is, the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the second pixel opening (152) of the counter electrode (305) to the lower surface in the direction of the first substrate (100) of the first quantum dot layer (620) is called the first distance (d1), and the distance between the edge of the second filter opening (802) and the edge of the second pixel opening (152) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the second distance (d2). Then, the value obtained by dividing the second distance (d2) by the first distance (d1) is 0.625 or more and 1 or less, more preferably 0.75 or more and 1 or less. And the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the third pixel opening (152) of the opposing electrode (305) to the lower surface in the direction of the first substrate (100) of the second quantum dot layer (630) is called the first distance (d1), and the distance between the edge of the third filter opening (803) and the edge of the third pixel opening (153) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the second distance (d2). Then, the value obtained by dividing the second distance (d2) by the first distance (d1) is 0.625 or more and 1 or less, more preferably 0.75 or more and 1 or less.

[0131] Meanwhile, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the area of ​​the first bank opening (501) of the bank (500) is larger than the area of ​​the first filter opening (801), the area of ​​the second bank opening (502) of the bank (500) is larger than the area of ​​the second filter opening (802), and the area of ​​the third bank opening (503) of the bank (500) is larger than the area of ​​the third filter opening (803). Through this, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), light passing through the edge of the first quantum dot layer (620) can be blocked by the first color filter layer (810) without passing through the second filter opening (802). Similarly, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), light passing through the edge of the second quantum dot layer (630) can be blocked by the first color filter layer (810) without passing through the third filter opening (803). Additionally, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), light passing through the edge of the light-transmitting layer (610) can be blocked by the third color filter layer (830) without passing through the first filter opening (801).

[0132] When viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the color coordinates of light passing through the edge of the first quantum dot layer (620) may differ from the color coordinates of light passing through the center of the first quantum dot layer (620). Similarly, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the color coordinates of light passing through the edge of the second quantum dot layer (630) may differ from the color coordinates of light passing through the center of the second quantum dot layer (630). Additionally, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the color coordinates of light passing through the edge of the light-transmitting layer (610) may differ from the color coordinates of light passing through the center of the light-transmitting layer (610). Accordingly, when viewed from a direction perpendicular to the first substrate (100) (z-axis direction), the area of ​​the first bank opening (501) of the bank (500) is larger than the area of ​​the first filter opening (801), the area of ​​the second bank opening (502) of the bank (500) is larger than the area of ​​the second filter opening (802), and the area of ​​the third bank opening (503) of the bank (500) is larger than the area of ​​the third filter opening (803), thereby effectively preventing light of such inappropriate color coordinates from proceeding outside the display device.

[0133] In the display device according to the present embodiment, the distance from the upper surface in the direction of the second substrate (900) (+z direction) to the lower surface in the direction of the first substrate (100) of the light-transmitting layer (610) at the portion overlapping with the first pixel opening (151) of the opposing electrode (305) is called the first distance (d1), and the distance between the edge of the first bank opening (501) and the edge of the first pixel opening (151) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the third distance (d3). The value obtained by dividing the third distance (d3) by the first distance (d1) is 0.75 or more and 1.25 or less.

[0134] FIG. 12 is a graph showing the color matching rate according to the relationship between the components of the display device of FIG. 7. In FIG. 12, the horizontal axis represents the third distance (d3), with the unit being μm. In FIG. 12, the vertical axis represents the color matching rate at the front of the display device. The color matching rate refers to the ratio in which the measurement triangle formed by the corresponding color coordinates in the BT.2020 diagram matches the ideal triangle formed by the color coordinates of the red light, green light, and blue light emitted by the display device, after measuring the color coordinates of the red light, green light, and blue light emitted by the display device. In other words, it is the ratio of the area of ​​the portion of the measurement triangle that overlaps with the ideal triangle based on the area of ​​the ideal triangle. The higher this ratio, the more the display device can be said to be capable of displaying high-quality images by implementing images of various colors. At this time, the first distance (d1) is 8 μm.

[0135] As can be seen in FIG. 12, if the third distance (d3) exceeds 10 µm, it can be observed that the color matching rate of the display device decreases rapidly. Therefore, in a situation where the first distance (d1) is 8 µm, the third distance (d3) needs to be 10 µm or less. If the first distance (d1) changes, the third distance (d3), at which the color matching rate of the display device decreases rapidly, also changes. Therefore, by making the value obtained by dividing the third distance (d3) by the first distance (d1) 1.25 or less, the color matching rate of the display device can be increased regardless of the first distance (d1). In addition, as mentioned above, since the area of ​​the first bank aperture (501) must be greater than or equal to the area of ​​the first filter aperture (801), the third distance (d3) needs to be 6 µm or more. That is, the value obtained by dividing the third distance (d3) by the first distance (d1) needs to be 0.75 or greater, just like the value obtained by dividing the second distance (d2) by the first distance (d1).

[0136] Up until now, it has been explained that the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the first pixel opening (151) of the opposing electrode (305) to the lower surface in the direction of the first substrate (100) of the light-transmitting layer (610) is called the first distance (d1), and the distance between the edge of the first bank opening (501) and the edge of the first pixel opening (151) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the third distance (d3), and the value obtained by dividing the third distance (d3) by the first distance (d1) must be between 0.75 and 1.25. This can be applied in the same way to the second pixel (PX2) and the third pixel (PX3).

[0137] That is, the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the second pixel opening (152) of the counter electrode (305) to the lower surface in the direction of the first substrate (100) of the first quantum dot layer (620) is called the first distance (d1), and the distance between the edge of the second bank opening (502) and the edge of the second pixel opening (152) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) is called the third distance (d3). Then, the value obtained by dividing the third distance (d3) by the first distance (d1) is 0.75 or more and 1.25 or less. And let the distance from the upper surface in the direction of the second substrate (900) (+z direction) at the part overlapping with the third pixel opening (152) of the opposing electrode (305) to the lower surface in the direction of the first substrate (100) of the second quantum dot layer (630) be called the first distance (d1), and let the distance between the edge of the third bank opening (503) and the edge of the third pixel opening (153) when viewed from a direction perpendicular to the first substrate (100) (z-axis direction) be called the third distance (d3). Then, the value obtained by dividing the third distance (d3) by the first distance (d1) is 0.75 or more and 1.25 or less.

[0138] If the area of ​​the first bank opening (501) is not greater than or equal to the area of ​​the first filter opening (801) but is larger than the area of ​​the first filter opening (801), then when the first distance (d1) is 8 µm, the third distance (d3) will be greater than 6 µm and less than or equal to 10 µm, and accordingly, the value obtained by dividing the third distance (d3) by the first distance (d1) will be greater than 0.75 and less than or equal to 1.25.

[0139] Meanwhile, as illustrated in FIG. 8, the second distance (d2) may be constant along the edge of the first pixel opening (151), constant along the edge of the second pixel opening (152), and constant along the edge of the third pixel opening (153). Likewise, the third distance (d3) may be constant along the edge of the first pixel opening (151), constant along the edge of the second pixel opening (152), and constant along the edge of the third pixel opening (153).

[0140] As such, the present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0141] PX1: 1st pixel PX2: 2nd pixel PX3: Third pixel 100: Substrate 110: Buffer layer 131: Interlayer insulation film 140: Planarization layer 150: Pixel definition layer 210: 1st thin-film transistor 220: 2nd thin-film transistor 230: Third thin-film transistor 303: Intermediate layer 305: Counter electrode 311: First pixel electrode 321: 2nd pixel electrode 331: 3rd pixel electrode 500: Bank 610: Floodlight 620: 1st quantum dot layer 630: 2nd quantum dot layer 810: 1st color filter layer 820: 2nd color filter layer 830: 3rd color filter layer

Claims

Claim 1 A first substrate; a pixel electrode disposed on the first substrate; a pixel defining film having a pixel opening that covers the edge of the pixel electrode and exposes the central part of the pixel electrode; a light-emitting layer located on the pixel electrode and capable of emitting light of a wavelength belonging to a first wavelength band; a counter electrode located on the light-emitting layer; a second substrate located on the upper surface of the first substrate such that the counter electrode is positioned between them; a bank located on the lower surface of the second substrate in the direction of the first substrate, and having a bank opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening; a quantum dot layer or a light-transmitting layer located within the bank opening; A filter definition layer interposed between the bank and the second substrate, and having a filter opening that overlaps with the pixel opening when viewed from a direction perpendicular to the first substrate and has an area larger than the area of ​​the pixel opening; wherein the distance from the upper surface in the direction of the second substrate at the portion of the counter electrode overlapping with the pixel opening to the lower surface in the direction of the first substrate of the quantum dot layer or light-transmitting layer is defined as the first distance, and the distance between the edge of the filter opening and the edge of the pixel opening when viewed from a direction perpendicular to the first substrate is defined as the second distance, wherein the second distance / first distance is 0.625 or greater and 1 or less, and when viewed from a direction perpendicular to the first substrate, the area of ​​the bank opening is greater than or equal to the area of ​​the filter opening, and when viewed from a direction perpendicular to the first substrate, the distance between the edge of the bank opening and the edge of the pixel opening is defined as the third distance, wherein the third distance / first distance is 0.75 or greater and 1.25 or less. Device. Claim 2 A display device according to claim 1, wherein the second distance is constant along the edge of the pixel opening. Claim 3 A display device according to claim 1, wherein the second distance is 5 µm or more and 8 µm or less. Claim 4 delete Claim 5 delete Claim 6 In paragraph 1, the display device, wherein the third distance is constant along the edge of the pixel opening. Claim 7 A display device according to claim 1, wherein the third distance is 6 µm or more and 10 µm or less. Claim 8 delete Claim 9 A display device according to claim 1, wherein if the distance between the edge of the bank opening and the edge of the pixel opening is defined as the third distance when viewed from a direction perpendicular to the first substrate, the third distance / first distance is greater than 0.75 and less than or equal to 1.

25. Claim 10 In claim 9, the display device, wherein the third distance is constant along the edge of the pixel opening. Claim 11 A display device according to claim 9, wherein the third distance is greater than 6 µm and less than or equal to 10 µm. Claim 12 A display device according to claim 1, wherein the quantum dot layer converts light of a wavelength belonging to a first wavelength band through which it passes into light of a wavelength belonging to a second wavelength band. Claim 13 A display device according to claim 12, further comprising a color filter layer that fills the filter opening and passes light of a wavelength belonging to the second wavelength band. Claim 14 A display device according to claim 1, wherein the second distance / first distance is 0.75 or more and 1 or less. Claim 15 A display device according to claim 14, wherein the second distance is 6 µm or more and 8 µm or less. Claim 16 delete Claim 17 delete Claim 18 delete Claim 19 delete Claim 20 delete Claim 21 delete Claim 22 delete Claim 23 delete Claim 24 delete

Images