Display Apparatus

Abstract

The present invention provides a display device comprising: a substrate; a first light-emitting element, a second light-emitting element, and a third light-emitting element disposed on the substrate, each emitting light of a different wavelength to form a light-emitting region; a low-reflection layer disposed on the first light-emitting element, the second light-emitting element, and the third light-emitting element, comprising an inorganic material; a light-blocking layer disposed on the low-reflection layer corresponding to a non-light-emitting region between the light-emitting regions, and having an opening corresponding to the light-emitting region; a color filter layer disposed in the opening of the light-blocking layer corresponding only to the first light-emitting element among the first light-emitting element, the second light-emitting element, and the third light-emitting element; and a reflection-adjusting layer disposed on the light-blocking layer and the color filter layer.

Description

Technology Field

[0001] Embodiments of the present invention relate to a display device, and more specifically, to a display device with improved visibility. Background Technology

[0002] Organic light-emitting displays possess self-luminous properties and, unlike liquid crystal display devices, do not require a separate light source, allowing for reduced thickness and weight. Furthermore, organic light-emitting displays exhibit high-quality characteristics such as low power consumption, high brightness, and high response speed. The problem to be solved

[0003] However, these conventional display devices had a problem where visibility was reduced due to external light reflection.

[0004] Embodiments of the present invention aim to provide a display device with improved visibility by disposing of an anti-reflection layer and a reflection-adjusting layer on a light-emitting element. However, this objective is exemplary and does not limit the scope of the present invention. means of solving the problem

[0005] According to one aspect of the present invention, a display device is provided comprising: a substrate; a first light-emitting element, a second light-emitting element, and a third light-emitting element disposed on the substrate, each emitting light of a different wavelength to form a light-emitting region; a low-reflection layer disposed on the first light-emitting element, the second light-emitting element, and the third light-emitting element, comprising an inorganic material; a light-blocking layer disposed on the low-reflection layer corresponding to a non-light-emitting region between the light-emitting regions, and having an opening corresponding to the light-emitting region; a color filter layer disposed in the opening of the light-blocking layer corresponding only to the first light-emitting element among the first light-emitting element, the second light-emitting element, and the third light-emitting element; and a reflection-adjusting layer disposed on the light-blocking layer and the color filter layer.

[0006] According to the present embodiment, the first light-emitting element can emit light of a red wavelength.

[0007] According to the present embodiment, the color filter layer can transmit light in the red wavelength region.

[0008] According to the present embodiment, the opening of the light-blocking layer includes a first opening corresponding to the first light-emitting element, a second opening corresponding to the second light-emitting element, and a third opening corresponding to the third light-emitting element, and the color filter layer may be disposed only in the first opening.

[0009] According to the present embodiment, the reflection adjusting layer may be arranged to fill the second opening and the third opening.

[0010] According to the present embodiment, the thickness of the color filter layer may be 0.9㎛ to 3.0㎛.

[0011] According to the present embodiment, the transmittance of the color filter layer may be 70% or more in the red wavelength region and 50% or less in the green wavelength region and the blue wavelength region.

[0012] According to the present embodiment, the color filter layer may include a scattering agent.

[0013] According to the present embodiment, the scattering agent may include at least one of TiO2, ZnO, Al2O3, SiO2, hollow silica, and polystyrene particles.

[0014] According to the present embodiment, the scattering agent may have an average diameter of 50 nm or more and 500 nm or less.

[0015] According to the present embodiment, the reflection adjusting layer may include a dye, a pigment, or a combination thereof.

[0016] According to the present embodiment, the transmittance of the reflection adjusting layer may be 64% to 72%.

[0017] According to the present embodiment, the low-reflection layer may include ytterbium (Yb), bismuth (Bi), cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), or a combination thereof.

[0018] According to the present embodiment, the inorganic material included in the low-reflection layer may have a refractive index of 1 or higher.

[0019] According to the present embodiment, the inorganic material included in the low-reflection layer may have an absorption coefficient of 0.5 or higher.

[0020] According to the present embodiment, the reflection adjusting layer can selectively absorb a first wavelength region and a second wavelength region of the visible light band.

[0021] According to the present embodiment, the first wavelength range may be 480 nm to 505 nm, and the second wavelength range may be 585 nm to 605 nm.

[0022] According to the present embodiment, the first light-emitting element includes a first pixel electrode, the second light-emitting element includes a second pixel electrode, and the third light-emitting element includes a third pixel electrode. The pixel defining film further includes an opening that covers the edges of the first pixel electrode, the second pixel electrode, and the third pixel electrode, and exposes the central portion of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, and the pixel defining film may include a light-blocking material.

[0023] According to the present embodiment, the apparatus further comprises a capping layer disposed on the first light-emitting element, the second light-emitting element, and the third light-emitting element, the capping layer comprising an organic material, and the anti-reflection layer may be disposed immediately on the capping layer.

[0024] According to the present embodiment, the apparatus further comprises a thin film encapsulation layer disposed on the low-reflection layer; and a touch sensing layer disposed on the thin film encapsulation layer; and the light-blocking layer may be disposed on the touch sensing layer.

[0025] Other aspects, features, and advantages other than those described above will become clear from the following drawings, claims, and detailed description of the invention. Effects of the invention

[0026] According to one embodiment of the present invention as described above, a display device with improved visibility by reducing external light reflection can be implemented. Of course, the scope of the present invention is not limited by this effect. Brief explanation of the drawing

[0027] FIG. 1 is a schematic perspective view illustrating a display device according to one embodiment of the present invention. FIG. 2 shows a display element provided in one pixel of a display device according to one embodiment of the present invention and a pixel circuit connected thereto. FIG. 3 is a cross-sectional view schematically showing a display device according to embodiments of the present invention. FIGS. 4a and FIGS. 4b are plan views schematically illustrating a portion of a pixel arrangement that may be included in a display area. FIG. 5 is a cross-sectional view illustrating a part of a display device according to one embodiment of the present invention. FIGS. 6 to 8 are cross-sectional views illustrating a part of a display device according to an embodiment of the present invention as a modified example of FIG. 5. FIG. 9 is a graph showing the light transmittance of a reflection-adjusting layer according to one embodiment of the present invention. FIGS. 10 and FIGS. 11 are cross-sectional views schematically illustrating parts of a display device according to embodiments of the present invention. FIG. 12 is a graph showing the reflection spectra of each of the first pixel, second pixel, and third pixel according to Comparative Example 1. FIG. 13 is a graph showing the reflection spectrum of a first pixel according to one embodiment of the present invention. Specific details for implementing the invention

[0028] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0030] In this specification, terms such as first, second, etc. are used not in a limiting sense, but for the purpose of distinguishing one component from another.

[0031] In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0032] In this specification, terms such as "include" or "have" mean that the features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added.

[0033] In this specification, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is immediately above the other part, but also cases where another film, region, or component is interposed therein.

[0034] In this specification, when it is stated that a membrane, region, component, etc. is connected, it includes cases where the membrane, region, or component is directly connected, or / or cases where other membranes, regions, or components are interposed between them to form an indirect connection. For example, when it is stated that a membrane, region, or component, etc. is electrically connected in this specification, it indicates cases where the membrane, region, or component, etc. are directly electrically connected, and / or cases where other membranes, regions, or components are interposed between them to form an indirect electrical connection.

[0035] In this specification, "A and / or B" indicates the case where it is A, B, or both A and B. And, "at least one of A and B" indicates the case where it is A, B, or both A and B.

[0036] In this specification, the x-axis, y-axis, and z-axis are not limited to three axes in an orthogonal coordinate system and may be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they may also refer to different directions that are not orthogonal to each other.

[0037] Where any embodiment in this specification can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described consecutively may be performed substantially simultaneously or proceed in the reverse order of the order described.

[0038] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is illustrated.

[0039] FIG. 1 is a schematic perspective view illustrating a display device according to one embodiment of the present invention.

[0040] Referring to FIG. 1, a display device (1) according to one embodiment may include a display area (DA) and a non-display area (NDA) outside the display area (DA). In FIG. 1, the display area (DA) is shown to have a roughly rectangular shape, but the present invention is not limited thereto. The display area (DA) may be provided in various shapes such as a circle, an ellipse, or a polygon.

[0041] A display area (DA) is a portion for displaying an image, and a plurality of pixels (P) may be arranged in the display area (DA). Hereinafter, the term "pixel" may mean "sub-pixel." Each pixel (P) may include a light-emitting element such as an organic light-emitting diode (OLED). Each pixel (P) may emit light of, for example, red, green, blue, or white.

[0042] A display area (DA) can provide a predetermined image through light emitted from pixels (P). As described above, a pixel (P) in this specification may be defined as a light-emitting area that emits light of any one of red, green, blue, or white.

[0043] The non-display area (NDA) is an area where pixels (P) are not placed and may be an area that does not provide an image. In the non-display area (NDA), a printed circuit board including power supply wiring and a driving circuit for driving the pixels (P), or a terminal section to which a driver IC is connected, may be placed.

[0044] Hereinafter, an organic light-emitting display device is described as an example of a display device according to one embodiment of the present invention. However, the display device of the present invention is not limited thereto. For example, the display device of the present invention may be an inorganic light-emitting display (Inorganic Light Emitting Display or Inorganic EL Display) or a display device such as a quantum dot light-emitting display. For example, the light-emitting layer included in the light-emitting element provided in the display device may include an organic material or an inorganic material. Additionally, a quantum dot may be located in the path of light emitted from the light-emitting layer.

[0045] FIG. 2 shows a display element provided in one pixel of a display device according to one embodiment of the present invention and a pixel circuit connected thereto.

[0046] Referring to FIG. 2, an organic light-emitting diode (OLED) which is a display element is connected to a pixel circuit (PC). The pixel circuit (PC) may include a first thin-film transistor (T1), a second thin-film transistor (T2), and a storage capacitor (Cst). The organic light-emitting diode (OLED) may emit, for example, red, green, or blue light, or red, green, blue, or white light.

[0047] The second thin-film transistor (T2) is a switching thin-film transistor connected to a scan line (SL) and a data line (DL), and can transmit a data voltage input from the data line (DL) to the first thin-film transistor (T1) according to the switching voltage input from the scan line (SL). The storage capacitor (Cst) is connected to the second thin-film transistor (T2) and the driving voltage line (PL), and can store a voltage corresponding to the difference between the voltage received from the second thin-film transistor (T2) and the first power supply voltage (ELVDD) supplied to the driving voltage line (PL).

[0048] The first thin-film transistor (T1) is a driving thin-film transistor and is connected to a driving voltage line (PL) and a storage capacitor (Cst), and can control the driving current flowing from the driving voltage line (PL) to the organic light-emitting diode (OLED) in correspondence with the voltage value stored in the storage capacitor (Cst). The organic light-emitting diode (OLED) can emit light having a predetermined brightness by the driving current. The counter electrode (e.g., cathode) of the organic light-emitting diode (OLED) can receive a second power supply voltage (ELVSS).

[0049] FIG. 2 illustrates a pixel circuit (PC) comprising two thin-film transistors and one storage capacitor, but in other embodiments, the number of thin-film transistors or the number of storage capacitors can be varied depending on the design of the pixel circuit (PC).

[0050] FIG. 3 is a cross-sectional view schematically showing a display device according to embodiments of the present invention, and is a cross-sectional view along line A-A' of FIG. 1.

[0051] Referring to FIG. 3, a display device according to an embodiment of the present invention may include a substrate (100), a display layer (200), an anti-reflection layer (300), a thin film encapsulation layer (400), a touch sensing layer (500), and an anti-reflection layer (600).

[0052] The substrate (100) may include glass or a polymer resin. For example, the polymer resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The substrate (100) containing the polymer resin may have flexible, rollable, or bendable properties. The substrate (100) may form a multilayer structure including a layer containing the polymer resin and an inorganic layer (not shown).

[0053] The display layer (200) may include an organic light-emitting diode which is a light-emitting element, a thin-film transistor electrically connected to the organic light-emitting diode, and insulating layers interposed between them.

[0054] A low-reflection layer (300) may be disposed on the display layer (200), and a thin film encapsulation layer (400) may be disposed on the low-reflection layer (300). For example, the display layer (200) and / or the low-reflection layer (300) may be sealed with a thin film encapsulation layer (400). The thin film encapsulation layer (400) may include at least one inorganic film layer and at least one organic film layer.

[0055] In another embodiment, instead of a thin film encapsulation layer (400), an encapsulation substrate (not shown) formed of glass material may be provided. The encapsulation substrate may be placed on a display layer (200), and the display layer (200) may be interposed between the substrate (100) and the encapsulation substrate. A gap may exist between the encapsulation substrate and the display layer (200), and the gap may be filled with a filler.

[0056] A touch sensing layer (500) may be disposed on the thin film encapsulation layer (400). The touch sensing layer (500) detects an external input, such as a touch of an object like a finger or a stylus pen, so that the display device (1) can obtain coordinate information corresponding to the touch location. The touch sensing layer (500) may include a touch electrode and trace lines connected to the touch electrode. The touch sensing layer (500) may detect an external input using a mutual capping method or a self-capping method.

[0057] A touch sensing layer (500) may be disposed on a thin film encapsulation layer (400). In one embodiment, the touch sensing layer (500) may be formed directly on the thin film encapsulation layer (400). Alternatively, the touch sensing layer (500) may be formed separately and then adhered to the thin film encapsulation layer (400) through an adhesive layer such as an optically transparent adhesive (OCA).

[0058] An anti-reflection layer (600) may be disposed on the touch sensing layer (500). The anti-reflection layer (600) can reduce the reflectivity of light (external light) incident toward the display device (1).

[0059] FIGS. 4a and FIGS. 4b are plan views schematically illustrating a portion of a pixel arrangement that may be included in a display area.

[0060] Referring to FIG. 4a, the display device includes a plurality of pixels, and the plurality of pixels may include a first pixel (P1), a second pixel (P2), and a third pixel (P3) that emit different colors. For example, the first pixel (P1) may emit red light, the second pixel (P2) may emit green light, and the third pixel (P3) may emit blue light. However, it is not limited thereto. For example, various variations may be possible, such as the first pixel (P1) emitting blue light, the second pixel (P2) emitting green light, and the third pixel (P3) emitting red light.

[0061] The first pixel (P1), the second pixel (P2), and the third pixel (P3) may have a rectangular shape among the polygonal shapes. In this specification, polygons and rectangles also include shapes with rounded vertices. As another embodiment, the first pixel (P1), the second pixel (P2), and the third pixel (P3) may have a circular or elliptical shape.

[0062] The sizes of the first pixel (P1), the second pixel (P2), and the third pixel (P3) may be provided differently from each other. For example, the area of ​​the second pixel (P2) may be provided smaller than the areas of the first pixel (P1) and the third pixel (P3), and the area of ​​the first pixel (P1) may be provided larger than the area of ​​the third pixel (P3). In other embodiments, various variations are possible, such as the sizes of the first pixel (P1), the second pixel (P2), and the third pixel (P3) being provided substantially the same.

[0063] In the present specification, the sizes of the first pixel (P1), the second pixel (P2), and the third pixel (P3) refer to the sizes of the light-emitting area (EA) of the display element implementing each pixel, and the light-emitting area (EA) can be defined by the opening (209OP) of the pixel defining film (209, see FIG. 5).

[0064] Meanwhile, the light-blocking layer (610) positioned above the display element layer is provided with an opening (610OP) corresponding to each pixel. The opening (610OP) is an area where a portion of the light-blocking layer (610) is removed, allowing light emitted from the display element to be emitted to the outside through the opening (610OP). The body of the light-blocking layer (610) is provided with a material that absorbs external light, thereby improving the visibility of the display device.

[0065] When viewed in a plan view, the opening (610OP) of the light-blocking layer (610) may be arranged to surround each pixel (P1, P2, P3). In one embodiment, the opening (610OP) of the light-blocking layer (610) may be provided in the shape of a square with rounded corners. The area of ​​each opening (610OP) of the light-blocking layer (610) corresponding to each pixel (P1, P2, P3) may be provided to be larger than the area of ​​each pixel (P1, P2, P3). However, the present invention is not limited thereto. The area of ​​each opening (610OP) of the light-blocking layer (610) may be provided to be substantially the same as the area of ​​each pixel (P1, P2, P3).

[0066] As shown in FIG. 4a, the first pixel (P1), the second pixel (P2), and the third pixel (P3) are Pentile TM It can be arranged in a pixel array of a ) structure. However, it is not limited thereto. For example, it can be arranged in a stripe structure as shown in FIG. 4b. In addition, as another embodiment, the first pixel (P1), the second pixel (P2), and the third pixel (P3) can be arranged in various pixel array structures such as a mosaic structure or a delta structure.

[0067] Hereinafter, a display device according to one embodiment of the present invention will be described in detail according to the stacking order shown in FIG. 5 and below.

[0068] FIG. 5 is a cross-sectional view illustrating a part of a display device according to one embodiment of the present invention, and FIGS. 6 to 8 are cross-sectional views illustrating a part of a display device according to one embodiment of the present invention as a modified example of FIG. 5.

[0069] Referring to FIG. 5, a display device (1) according to one embodiment may include a substrate (100), a display layer (200), an anti-reflection layer (300), a thin film encapsulation layer (400), a touch sensing layer (500), and an anti-reflection layer (600).

[0070] The display layer (200) includes first to third organic light-emitting diodes (OLED1, OLED2, OLED3) and a thin-film transistor (TFT), and may include insulating layers such as a buffer layer (201), a gate insulating layer (203), an interlayer insulating layer (205), a planarization layer (207), a pixel defining film (209), and a spacer (211). In one embodiment, the display layer (200) may further include a capping layer (230) disposed on the first to third organic light-emitting diodes (OLED1, OLED2, OLED3).

[0071] A buffer layer (201) is positioned on a substrate (100) to reduce or block the penetration of foreign matter, moisture, or outside air from the bottom of the substrate (100) and to provide a flat surface on the substrate (100). The buffer layer (201) may include an inorganic material such as an oxide or a nitride, an organic material, or an organic-inorganic composite, and may be formed in a single-layer or multi-layer structure of inorganic and organic materials. A barrier layer (not shown) that blocks the penetration of outside air may be further included between the substrate (100) and the buffer layer (201). The buffer layer (201) may be silicon oxide (SiO2) or silicon nitride (SiN X It may include ).

[0072] A thin-film transistor (TFT) may be disposed on the buffer layer (201). The thin-film transistor (TFT) may include a semiconductor layer (ACT), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE). The thin-film transistor (TFT) may be connected to an organic light-emitting diode (OLED) to drive it.

[0073] The semiconductor layer (ACT) may be disposed on the buffer layer (201) and may include polysilicon. Alternatively, the semiconductor layer (ACT) may include amorphous silicon. Alternatively, the semiconductor layer (ACT) may include an oxide of at least one material selected from the group comprising indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The semiconductor layer (ACT) may include a channel region, an impurity-doped source region, and a drain region.

[0074] The gate electrode (GE), source electrode (SE), and drain electrode (DE) can be formed from various conductive materials. The gate electrode (GE) may include at least one of molybdenum, aluminum, copper, and titanium. For example, the gate electrode (GE) may be a single layer of molybdenum or a three-layer structure including a molybdenum layer, an aluminum layer, and a molybdenum layer. The source electrode (SE) and drain electrode (DE) may include at least one material selected from the group including copper, titanium, and aluminum. For example, the source electrode (SE) and drain electrode (DE) may be a three-layer structure including a titanium layer, an aluminum layer, and a titanium layer.

[0075] Meanwhile, to ensure insulation between the semiconductor layer (ACT) and the gate electrode (GE), a gate insulating layer (203) containing inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride may be interposed between the semiconductor layer (ACT) and the gate electrode (GE). Additionally, an interlayer insulating layer (205) containing inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed on the upper surface of the gate electrode (GE), and the source electrode (SE) and drain electrode (DE) may be disposed on such an interlayer insulating layer (205). In this way, an insulating film containing inorganic materials may be formed through CVD (chemical vapor deposition) or ALD (atomic layer deposition). This is also the case for the embodiments described later.

[0076] A planarization layer (207) may be disposed on a thin film transistor (TFT). To provide a flat upper surface, chemical mechanical polishing may be performed on the upper surface of the planarization layer (207) after forming the planarization layer (207). This planarization layer (207) may include photosensitive polyimide, polyimide, polystyrene (PS), polycarbonate (PC), BCB (Benzocyclobutene), HMDSO (Hexamethyldisiloxane), polymethylmethacrylate (PMMA), general-purpose polymers such as polystyrene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine polymers, p-xylene polymers, or vinyl alcohol polymers. In FIG. 6, the flattening layer (207) is shown as a single layer, but the flattening layer (207) may be multi-layered.

[0077] First to third organic light-emitting diodes (OLED1, OLED2, OLED3) may be disposed on the flattening layer (207). A first organic light-emitting diode (OLED1) may include a first pixel electrode (221), a first intermediate layer (222) including a first common layer (222a), a first light-emitting layer (222b), and a second common layer (222c), and a counter electrode (223); a second organic light-emitting diode (OLED2) may include a second pixel electrode (221'), a second intermediate layer (222') including a first common layer (222a), a second light-emitting layer (222b'), and a second common layer (222c), and a counter electrode (223); and a third organic light-emitting diode (OLED3) may include a third pixel electrode (221''), a first common layer (222a), a third light-emitting layer (222b''), a third intermediate layer (222'') including a second common layer (222c), and a counter electrode (223). there is.

[0078] Hereinafter, the explanation is based on the first organic light-emitting diode (OLED1) included in the first pixel (P1), and since the stacked structure of the second organic light-emitting diode (OLED2) and the third organic light-emitting diode (OLED3) is substantially the same as that of the first organic light-emitting diode (OLED1), a redundant explanation is omitted.

[0079] The first organic light-emitting diode (OLED1) may include a first pixel electrode (221) (hereinafter, pixel electrode (221)), a first intermediate layer (222) (hereinafter, intermediate layer (222)), and a counter electrode (223).

[0080] The pixel electrode (221) can be placed on the flattening layer (207). The pixel electrode (221) can be placed for each pixel. The pixel electrodes (221) corresponding to each of the adjacent pixels can be spaced apart from each other.

[0081] The pixel electrode (221) may be a reflective electrode. In this case, the pixel electrode (221) may have a reflective film comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) and compounds thereof, and a transparent or translucent conductive layer formed on the reflective film. The transparent or translucent electrode layer may include at least one material selected from the group comprising indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). For example, the pixel electrode (221) may have a stacked structure of ITO / Ag / ITO.

[0082] A pixel defining film (209) may be disposed on the pixel electrode (221). The pixel defining film (209) may have an opening (209OP) that exposes the central portion of each pixel electrode (221). The pixel defining film (209) covers the edge of the pixel electrode (221) and increases the distance between the edge of the pixel electrode (221) and the opposing electrode (223), thereby preventing the occurrence of arcs, etc., at the edge of the pixel electrode (221).

[0083] The pixel defining film (209) may include an organic insulating material. Alternatively, the pixel defining film (209) may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide. Alternatively, the pixel defining film (209) may include both an organic insulating material and an inorganic insulating material. In one embodiment, the pixel defining film (209) may include a light-blocking material and may be provided in black. The light-blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles such as nickel, aluminum, molybdenum, and their alloys, metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride). When the pixel defining film (209) includes a light-blocking material, it may reduce external light reflection by metal structures placed below the pixel defining film (209). However, the present invention is not limited thereto. In another embodiment, as shown in FIG. 6, the pixel defining film (209) may not include a light-blocking material and may include a light-transmitting organic insulating material.

[0084] A spacer (211) may be disposed on the pixel defining film (209). The spacer (211) may include an organic insulating material such as polyimide. Alternatively, the spacer (211) may be silicon nitride (SiN X It may include inorganic insulating materials such as silicon oxide (SiO2) or organic insulating materials and inorganic insulating materials.

[0085] In one embodiment, the spacer (211) may include the same material as the pixel defining film (209). In this case, the pixel defining film (209) and the spacer (211) may be formed together in a mask process using a halftone mask or the like. In one embodiment, the spacer (211) and the pixel defining film (209) may include different materials.

[0086] An intermediate layer (222) may be disposed on the pixel electrode (221) and the pixel defining film (209). The intermediate layer (222) may include a first common layer (222a), a light-emitting layer (222b) (i.e., the first light-emitting layer (222b)), and a second common layer (222c).

[0087] The light-emitting layer (222b) may be disposed inside the opening (209OP) of the pixel defining film (209). The light-emitting layer (222b) may be an organic material containing a fluorescent or phosphorescent material capable of emitting blue, green, or red light. The aforementioned organic material may be a low-molecular-weight organic material or a high-molecular-weight organic material. Alternatively, the light-emitting layer (222b) may be an inorganic material containing quantum dots, etc. Specifically, a quantum dot refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. The quantum dot may include, for example, a group III-VI semiconductor compound, a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, a group I-III-VI semiconductor compound, a group IV semiconductor compound, a group IV element or compound, or any combination thereof.

[0088] A first common layer (222a) and a second common layer (222c) may be disposed below and above the light-emitting layer (222b), respectively. The first common layer (222a) may, for example, include a hole transport layer (HTL) or include a hole transport layer and a hole injection layer (HIL). The second common layer (222c) may, for example, include an electron transport layer (ETL) or include an electron transport layer and an electron injection layer (EIL). In one embodiment, the second common layer (222c) may not be provided.

[0089] While the light-emitting layer (222b) is arranged for each pixel to correspond to the opening (209OP) of the pixel defining film (209), the first common layer (222a) and the second common layer (222c) can each be formed integrally to cover the entire substrate (100). In other words, the first common layer (222a) and the second common layer (222c) can each be formed integrally to cover the entire display area (DA) of the substrate (100).

[0090] The counter electrode (223) may be a cathode, which is an electron injection electrode. This counter electrode (223) may include a conductive material with a low work function. For example, the counter electrode (223) may include a (semi)transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), ytterbium (Yb), or alloys thereof. As an example, the counter electrode (223) may be AgMg or AgYb, etc. Alternatively, the counter electrode (223) may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi)transparent layer including the aforementioned material. The layers from the pixel electrode (221) to the counter electrode (223) can form an organic light-emitting diode (OLED).

[0091] In one embodiment, the display device (1) may further include a capping layer (230) disposed on an organic light-emitting diode (OLED). The capping layer (230) may serve to improve the luminous efficiency of the organic light-emitting diode (OLED) by the principle of constructive interference. The capping layer (230) may include a material having a refractive index of 1.6 or higher for light having a wavelength of, for example, 589 nm.

[0092] The capping layer (230) may be an organic capping layer containing organic material, an inorganic capping layer containing inorganic material, or a composite capping layer containing organic and inorganic material. For example, the capping layer (230) may include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0093] A low-reflection layer (300) may be disposed on the capping layer (230). Since the capping layer (230) may be disposed on an organic light-emitting diode (OLED), the low-reflection layer (300) may be disposed on an organic light-emitting diode (OLED). The low-reflection layer (300) may include an inorganic material with low reflectivity, and in one embodiment, may include a metal or a metal oxide. If the low-reflection layer (300) includes a metal, for example, ytterbium (Yb), bismuth (Bi), cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper (Cu), calcium (Ca), or a combination thereof. Additionally, if the low-reflection layer (300) includes a metal oxide, for example, it may include SiO2, TiO2, ZrO2, Ta2O5, HfO2, Al2O3, ZnO, Y2O3, BeO, MgO, PbO2, WO3, SiNx, LiF, CaF2, MgF2, CdS, or a combination thereof.

[0094] In one embodiment, the absorption coefficient (k) of the inorganic material included in the low-reflection layer (300) is 4.0 or less and 0.5 or more (0.5 < k 4.0) may be possible. In addition, the inorganic material included in the low-reflection layer (300) may have a refractive index (n) of 1 or greater (n ≥ 1.0).

[0095] The low-reflection layer (300) can reduce external light reflectivity by inducing destructive interference between light incident into the interior of the display device (1) and light reflected from the metal placed below the low-reflection layer (300). Therefore, by reducing the external light reflectivity of the display device (1) through the low-reflection layer (300), the display quality and visibility of the display device (1) can be improved.

[0096] In FIG. 5, the low-reflection layer (300) is shown as having a structure that is placed on the substrate (100), such as a counter electrode (223) and a capping layer (230), but the present invention is not limited thereto. As shown in FIG. 7, the low-reflection layer (300) may be patterned and provided for each pixel. In this case, the low-reflection layer (300) may be patterned to correspond to the light-emitting region (EA) of each pixel, and the area of ​​the low-reflection layer (300) may be equal to or larger than the light-emitting region (EA).

[0097] A thin film encapsulation layer (400) may be disposed on the low-reflection layer (300). The thin film encapsulation layer (400) may include at least one inorganic film layer and at least one organic film layer. For example, the thin film encapsulation layer (400) may include a first inorganic encapsulation layer (410), an organic encapsulation layer (420), and a second inorganic encapsulation layer (430) that are sequentially stacked.

[0098] The first inorganic encapsulation layer (410) and the second inorganic encapsulation layer (430) are silicon oxide (SiO2) and silicon nitride (SiN X It may include inorganic insulating materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO). The first inorganic encapsulation layer (410) and the second inorganic encapsulation layer (430) may be a single layer or multilayer structure containing the aforementioned inorganic insulating materials.

[0099] The organic sealing layer (420) can relieve internal stress of the first inorganic sealing layer (410) and / or the second inorganic sealing layer (430). The organic sealing layer (420) may include a polymer-based material. Polymer-based materials may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), or any combination thereof.

[0100] The organic encapsulation layer (420) can be formed by applying a material containing monomers that has flowability and reacting the monomers by using heat or light such as ultraviolet rays to cause them to combine into a polymer. Alternatively, the organic encapsulation layer (420) can be formed by applying a polymer material.

[0101] Even if a crack occurs within the thin film encapsulation layer (400) through the aforementioned multilayer structure, such cracks can be prevented from connecting between the first inorganic encapsulation layer (410) and the organic encapsulation layer (420) or between the organic encapsulation layer (420) and the second inorganic encapsulation layer (430). This prevents or minimizes the formation of a path for external moisture or oxygen to penetrate into the display area (DA).

[0102] In one embodiment, when a thin film encapsulation layer (400) is disposed on an organic light-emitting diode (OLED), the substrate (100) may be provided with a polymer resin. However, the present invention is not limited thereto.

[0103] A touch sensing layer (500) may be disposed on a thin film encapsulation layer (400). The touch sensing layer (500) may include a first conductive layer (MTL1), a first touch insulating layer (510), a second conductive layer (MTL2), and a second touch insulating layer (520). The first conductive layer (MTL1) may be disposed directly on the thin film encapsulation layer (400). In this case, the first conductive layer (MTL1) may be disposed directly on the second inorganic encapsulation layer (430) of the thin film encapsulation layer (400). However, the present invention is not limited thereto.

[0104] Additionally, the touch sensing layer (500) may include an insulating film (not shown) interposed between the first conductive layer (MTL1) and the thin film encapsulation layer (400). The insulating film may be disposed on the second inorganic encapsulation layer (430) of the thin film encapsulation layer (400) to flatten the surface on which the first conductive layer (MTL1), etc. are disposed. In this case, the first conductive layer (MTL1) may be disposed directly on the insulating film. The insulating film may be silicon oxide (SiO2) or silicon nitride (SiN X It may include inorganic insulating materials such as silicon oxynitride (SiON), etc. Alternatively, the insulating film may include organic insulating materials.

[0105] In one embodiment, a first touch insulating layer (510) may be disposed on the first conductive layer (MTL1). The first touch insulating layer (510) may be provided with an inorganic or organic material. When the first touch insulating layer (510) is provided with an inorganic material, the first touch insulating layer (510) may include at least one material selected from the group comprising silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride. When the first touch insulating layer (510) is provided with an organic material, the first touch insulating layer (510) may include at least one material selected from the group comprising acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin.

[0106] In one embodiment, a second conductive layer (MTL2) may be disposed on the first touch insulating layer (510). The second conductive layer (MTL2) may serve as a sensor for detecting a user's touch input. The first conductive layer (MTL1) may serve as a connecting part for connecting the patterned second conductive layer (MTL2) in one direction. In one embodiment, both the first conductive layer (MTL1) and the second conductive layer (MTL2) may serve as sensors. In this case, the first conductive layer (MTL1) and the second conductive layer (MTL2) may be electrically connected through a contact hole (CH). As both the first conductive layer (MTL1) and the second conductive layer (MTL2) serve as sensors, the resistance of the touch electrode is reduced, allowing for rapid detection of the user's touch input.

[0107] In one embodiment, the first conductive layer (MTL1) and the second conductive layer (MTL2) may have a mesh structure, for example, to allow light emitted from an organic light-emitting diode (OLED) to pass through. In this case, the first conductive layer (MTL1) and the second conductive layer (MTL2) may be arranged so as not to overlap with the light-emitting region (EA) of the organic light-emitting diode (OLED).

[0108] The first conductive layer (MTL1) and the second conductive layer (MTL2) may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), and alloys thereof. The transparent conductive layer may include a transparent conductive oxide such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. Additionally, the transparent conductive layer may include a conductive polymer such as PEDOT, metal nanowires, carbon nanotubes, or graphene, etc.

[0109] In one embodiment, a second touch insulating layer (520) may be disposed on the second conductive layer (MTL2). The second touch insulating layer (520) may be provided with an inorganic or organic material. When the second touch insulating layer (520) is provided with an inorganic material, the second touch insulating layer (520) may include at least one material selected from the group comprising silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride. When the second touch insulating layer (520) is provided with an organic material, the second touch insulating layer (520) may include at least one material selected from the group comprising acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin.

[0110] In another embodiment, as illustrated in FIG. 8, the touch sensing layer (500) may include a first conductive layer (MTL1), a first touch insulating layer (510), and a second conductive layer (MTL2), but may not include a second touch insulating layer (520). In this case, the light-blocking layer (610) may be provided in a structure that covers the second conductive layer (MTL2). A portion of the first touch insulating layer (510) may be exposed through an opening (610OP) of the light-blocking layer (610).

[0111] An anti-reflection layer (600) may be disposed on the touch sensing layer (500). The anti-reflection layer (600) may include a light-blocking layer (610), a color filter layer (620), and a reflection control layer (630).

[0112] The light-blocking layer (610) has an opening (610OP) that overlaps with the light-emitting region (EA). The opening (610OP) may include first to third openings (610OP1, 610OP2, 610OP3) corresponding to the first to third organic light-emitting diodes (OLED1, OLED2, OLED3), respectively. The light-emitting region (EA) may be defined by the opening (209OP) of the pixel defining film (209). In one embodiment, the opening (610OP) of the light-blocking layer (610) overlaps with the opening (209OP) of the pixel defining film (209), and the second width (W2, FIG. 11) of the opening (610OP) of the light-blocking layer (610) may be larger than the first width (W1, FIG. 11) of the opening (209OP) of the pixel defining film (209).

[0113] The body portion of the light-blocking layer (610) equipped with an opening (610OP) can overlap with the body portion of the pixel defining film (209). For example, the body portion of the light-blocking layer (610) can overlap only with the body portion of the pixel defining film (209). The body portion of the light-blocking layer (610) is a portion distinguished from the opening (610OP) of the light-blocking layer (610) and refers to a portion having a predetermined volume (thickness). Likewise, the body portion of the pixel defining film (209) is distinguished from the opening (209OP) of the pixel defining film (209) and represents a portion having a predetermined volume.

[0114] A color filter layer (620) may be disposed on the touch sensing layer (500). In one embodiment, the color filter layer (620) may be disposed only on the first organic light-emitting diode (OLED1). Since the first organic light-emitting diode (OLED1) emits light of a red wavelength, the color filter layer (620) may be disposed corresponding to the first pixel (P1) that emits red light. The color filter layer (620) may be disposed to fill the interior of the first opening (610OP1) of the light-blocking layer (610) provided corresponding to the light-emitting region (EA) of the first organic light-emitting diode (OLED1).

[0115] The color filter layer (620) can transmit light in a specific wavelength range. Specifically, the color filter layer (620) may transmit only light in the wavelength range emitted from the first organic light-emitting diode (OLED1). For example, the color filter layer (620) may contain a red component, and the red component may include, for instance, a red pigment, a dye, etc. In one embodiment, the color filter layer (620) transmits red light emitted from the first organic light-emitting diode (OLED1) and absorbs light of wavelengths other than red light, thereby increasing the purity of the red light. Additionally, as the red light emitted from the first organic light-emitting diode (OLED1) passes through the color filter layer (620), the band width of the emitted wavelength may be narrowed. That is, high-color-purity red light can be realized through the color filter layer (620).

[0116] Since the color filter layer (620) is positioned to correspond only to the first organic light-emitting diode (OLED1), it may not be positioned on the second organic light-emitting diode (OLED2) and the third organic light-emitting diode (OLED3). Therefore, on the second organic light-emitting diode (OLED2) and the third organic light-emitting diode (OLED3), a reflection adjustment layer (630), which will be described later, may be embedded within the second opening (610OP2) and the third opening (610OP3) of the light-blocking layer (610). The reflection adjustment layer (630) may come into direct contact with the second touch insulation layer (520) (or the first touch insulation layer (510) in the embodiment of FIG. 8) exposed through the second opening (610OP2) and the third opening (610OP3) of the light-blocking layer (610).

[0117] In one embodiment, the first thickness (t1) of the color filter layer (620) may be approximately 0.9 μm to 3.0 μm. More specifically, the first thickness (t1) of the color filter layer (620) may be approximately 2.7 μm to 3.0 μm. In this case, the first thickness (t1) of the color filter layer (620) may be greater than the thickness of the body portion of the light-blocking layer (610). The thickness of the color filter layer (620) may be appropriately adjusted within the above range, taking into account the transmittance of the color filter layer (620).

[0118] A reflection adjustment layer (630) may be disposed on the color filter layer (620). The reflection adjustment layer (630) can selectively absorb light of a certain wavelength band among light reflected from within the display device or light incident from outside the display device. The reflection adjustment layer (630) will be described in detail below with reference to FIG. 9.

[0119] FIG. 9 is a graph showing the light transmittance of a reflection adjusting layer (630) according to one embodiment of the present invention.

[0120] Referring to FIG. 5 and FIG. 9 together, FIG. 9 shows that the reflection adjustment layer (630) absorbs light in a first wavelength region of 480 nm to 500 nm and a second wavelength region of 585 nm to 605 nm. In this case, the light transmission spectrum of the reflection adjustment layer (630) may be provided such that the light transmittance in the first wavelength region and the second wavelength region is 40% or less. That is, the reflection adjustment layer (630) can absorb light of a wavelength outside the red, green, or blue emission wavelength range of the first to third organic light-emitting diodes (OLED1, OLED2, OLED3). In this way, the reflection adjustment layer (630) can prevent or minimize the decrease in brightness of the display device (1) by absorbing light of a wavelength that does not fall within the red, green, or blue wavelength range of the first to third organic light-emitting diodes (OLED1, OLED2, OLED3), and at the same time prevent or minimize the decrease in the luminous efficiency of the display device (1) and improve visibility.

[0121] Meanwhile, in another embodiment, the reflection adjusting layer (630), unlike the graph in FIG. 9, may necessarily absorb a second wavelength region of 585 nm to 605 nm and selectively absorb a first wavelength region of 480 nm to 500 nm. For example, the reflection adjusting layer (630) may not absorb the first wavelength region, and in some cases, may absorb at least a portion of the first wavelength region to adjust the final reflection visual sensation. Alternatively, the reflection adjusting layer (630) may selectively absorb another wavelength region (e.g., 410 nm to 440 nm).

[0122] In one embodiment, the reflection adjusting layer (630) may be provided with an organic layer comprising a dye, a pigment, or a combination thereof. The reflection adjusting layer (630) may include a tetraazaporphyrin (TAP) compound, a porphyrin compound, a metal porphyrin compound, an oxazine compound, a squarylium compound, a triarylmethane compound, a polymethine compound, anthraquinone compound, a phthalocyanine compound, an azo compound, a perylene compound, a xanthene compound, a diimmonium compound, a dipyrromethene compound, a cyanine compound, and combinations thereof.

[0123] For example, the reflection adjusting layer (530) may include a compound represented by any one of the following chemical formulas 1 to 4. Chemical formulas 1 to 4 may be chromophore structures corresponding to some of the compounds described above. Chemical formulas 1 to 4 are merely examples, and the present invention is not limited thereto.

[0124] <Chemical Formula 1>

[0125]

[0126] <Chemical Formula 2>

[0127]

[0128] <Chemical Formula 3>

[0129]

[0130] <Chemical Formula 4>

[0131]

[0132] Among the above chemical formulas 1 to 4,

[0133] M is a metal, and

[0134] X- is a monovalent anion, and

[0135] R is the same or different, each being hydrogen, deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group, or nitro group; deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q 11 )(Q 12 ), or substituted or unsubstituted with any combination thereof, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, or C1-C 60 Alkoxygenation;

[0136] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, C1-C 60 Alkoxy group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, C6-C 60 Arylthio group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ), -P(=O)(Q 21 )(Q 22 ), or substituted or unsubstituted with any combination thereof, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy group, or C6-C 60 Arylthio group; or -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), or -P(=O)(Q 31 )(Q 32 It can be.

[0137] The above Q1 to Q3, Q 11 to Q 13 , Q 21 to Q 23 and Q 31 to Q 33 They are independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 Alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy group; or deuterium, -F, cyano group, C1-C 60 Alkyl group, C1-C 60 C3-C substituted or unsubstituted with an alkoxy group, a phenyl group, a biphenyl group, or any combination thereof 60 Carbocyclic group or C1-C 60 It can be a heterocyclic group.

[0138] In one embodiment, the X -It can be a halide ion, carbosylate ion, nitrate ion, sulfonate ion, or bisulfate ion.

[0139] For example, the above X - is F - , Cl - , Br - , I - , CH3COO - , NO3 - , HSO4 - It may be propionate ions, benzene sulfonate ions, etc.

[0140] In one embodiment, the reflectance measured in SCI (Specular Component Included) mode on the surface of the reflection adjustment layer (630) may be 10% or less. That is, the reflection adjustment layer (630) absorbs the external light reflection of the display device, thereby improving visibility.

[0141] The display device according to the present embodiment does not use a polarizing film to reduce external light reflection, but introduces a low-reflection layer (300) and a reflection adjustment layer (630).

[0142] As a comparative example, when a polarizer is used to reduce external light reflection, the transmittance of light emitted from the first to third organic light-emitting diodes may be significantly reduced by the polarizer. When a red color filter, a green color filter, and a blue color filter corresponding to the color of each pixel are used to reduce external light reflection, reflection bands may occur due to different light reflectances for each pixel, and process costs may increase due to the large number of process steps.

[0143] The display device according to the present embodiment includes a low-reflection layer (300) and a reflection adjustment layer (630) that are commonly applied to each pixel, thereby increasing light transmittance while reducing external light reflection. In addition, by providing only a red color filter layer (620), light efficiency can be maximized while simultaneously simplifying the process.

[0144] The reflection adjustment layer (630) may be placed across the entire front of the display area (DA) to cover the color filter layer (620) and the light-blocking layer (610). Unlike the case where the color filter layer (620) is placed only in correspondence with the first organic light-emitting diode (OLED1) as described above, the reflection adjustment layer (630) may be placed across the first to third organic light-emitting diodes (OLED1, OLED2, OLED3). On the first organic light-emitting diode (OLED1), the reflection adjustment layer (630) may be placed on the color filter layer (620), and on the second organic light-emitting diode (OLED2) and the third organic light-emitting diode (OLED3), the reflection adjustment layer (630) may be placed to cover the opening (610OP) of the light-blocking layer (610). Accordingly, light (L1) emitted from the first organic light-emitting diode (OLED1) passes through the color filter layer (620) and the reflection adjustment layer (630), and light (L2, L3) emitted from the second organic light-emitting diode (OLED2) and the third organic light-emitting diode (OLED3) passes through the reflection adjustment layer (630).

[0145] In one embodiment, the reflective adjusting layer (630) may have a transmittance of about 64% to 72%. The transmittance of the reflective adjusting layer (630) may be adjusted according to the content of pigment and / or dye included in the reflective adjusting layer (630).

[0146] FIGS. 10 and FIGS. 11 are cross-sectional views schematically illustrating parts of a display device according to embodiments of the present invention.

[0147] Referring to FIG. 10, there is a difference from the previously described embodiments in the composition of the color filter layer (620). Below, the differences in the color filter layer (620) will be explained mainly, and redundant content will be omitted.

[0148] In one embodiment, the color filter layer (620) may include a scattering agent (SP). The color filter layer (620) may include a matrix (MR) formed of a polymer photosensitive resin, and the scattering agent (SP) may be dispersed in the matrix (MR) of the color filter layer (620). The matrix (MR) may further include pigments and / or dyes in addition to the polymer photosensitive resin.

[0149] The scattering agent (SP) may include at least one of TiO2, ZnO, Al2O3, SiO2, hollow silica, and polystyrene particles. The scattering agent (SP) may include any one of TiO2, ZnO, Al2O3, SiO2, hollow silica, and polystyrene particles, or may be a mixture of two or more materials selected from TiO2, ZnO, Al2O3, SiO2, hollow silica, and polystyrene particles formed from polystyrene resin. For example, the color filter layer (620) may include TiO2 as the scattering agent (SP).

[0150] In one embodiment, the scattering agent (SP) may be a spherical particle. Meanwhile, the embodiment is not limited thereto, and the scattering agent (SP) may be elliptical or amorphous.

[0151] The average diameter of the scattering agent (SP) may be 500 nm or less. For example, the average diameter of the scattering agent (SP) may be 50 nm or more and 500 nm or less. The average diameter of the scattering agent (SP) may be, for example, the arithmetic mean of the diameters at cross-sections of multiple scattering agents (SP). If the average diameter of the scattering agent (SP) is less than 50 nm, the content of the scattering agent (SP) increases relatively to exhibit a scattering effect in the color filter layer (620), and in this case, the transmittance in the color filter layer (620) may decrease. Additionally, if the average diameter of the scattering agent (SP) becomes smaller than 50 nm, the change in relative luminance values ​​according to the viewing angle in the color filter layer (620) becomes large, and the effect of improving display quality by reducing color difference according to the viewing angle may not be exhibited. In addition, if the average diameter of the scattering agent (SP) exceeds 500 nm, the film properties may be reduced when forming the color filter layer (620) due to the relatively large particle size. Also, if the average diameter of the scattering agent (SP) exceeds 500 nm, it may be difficult to discharge the resin provided for forming the color filter layer (620) from the nozzle during the manufacturing process.

[0152] As described above, the color filter layer (620) according to one embodiment includes a scattering agent (SP) to minimize the reduction in frontal brightness while reducing the difference in brightness according to the viewing angle, and accordingly, the difference in display quality according to the viewing angle can be improved.

[0153] Referring to FIG. 11, a stacked structure corresponding to one pixel of the present invention is illustrated. FIG. 11 differs from the previously described embodiments in relation to the thickness of the color filter layer (620). Below, the differences in the color filter layer (620) will be explained mainly, and redundant content will be omitted.

[0154] In one embodiment, the color filter layer (620) may have a second thickness (t2). The second thickness (t1) of the color filter layer (620) may be approximately 0.9 μm to 3.0 μm. More specifically, the second thickness (t2) of the color filter layer (620) may be approximately 0.9 μm to 1.5 μm. This may be reduced by about 50 to 70% compared to the first thickness (t1) of the color filter layer (620) of FIG. 5, etc. In this case, the second thickness (t2) of the color filter layer (620) may be thinner than the thickness of the body portion of the light-blocking layer (610).

[0155] In this way, by adjusting the thickness of the color filter layer (620), the transmittance in the short wavelength range, such as blue light, is slightly increased by, for example, about 15%, but this does not affect the characteristics of the color filter layer (620), and rather, the light efficiency can be increased at the same reflectance through the light corresponding to the increased transmittance. This can be confirmed through Example 2 of [Table 1] described later.

[0156] FIG. 12 is a graph showing the reflection spectra of each of the first pixel, second pixel, and third pixel according to Comparative Example 1, and FIG. 13 is a graph showing the reflection spectrum of the first pixel according to an embodiment of the present invention.

[0157] Referring to the graph in Fig. 12, the reflection spectrum of Comparative Example 1, which does not have a color filter layer and a reflection adjustment layer applied, was measured. In Fig. 12, a red pixel (R') emitting red light, a green pixel (G') emitting green light, and a blue pixel (B') emitting blue light were each measured.

[0158] Comparative Example 1 is provided with the low-reflection layer (300) described above in FIG. 5, etc. In FIG. 12, it can be seen that the green pixel (G') and the blue pixel (B') have low reflectance in regions other than the green wavelength region and the blue wavelength region, whereas in the case of the red pixel (R'), it can be seen that the reflectance of red light is high in the wavelength region of about 400 nm to 550 nm, particularly in the blue light wavelength region. The fact that the light emitted from the red pixel (R') has high reflectance in the blue light wavelength region can act as a factor that lowers the light efficiency in the display area.

[0159] Accordingly, referring to the graph in Fig. 13, the reflection spectra of the red pixel (R') according to Comparative Example 1 of Fig. 12, the red pixel (R1) according to Example 1 of the present invention, and the red pixel (R2) according to Example 2 of the present invention were measured, respectively, based on the first organic light-emitting diode emitting red light.

[0160] In the case of the red pixel (R') according to Comparative Example 1, as described above with reference to FIG. 12, it can be confirmed that the reflectance of red light is high in the wavelength range of about 400 nm to 550 nm, particularly in the blue light wavelength range.

[0161] In Examples 1 and 2, a low-reflection layer (300), a color filter layer (620), and a reflection adjustment layer (630) are provided. In Example 1, the thickness of the color filter layer (620) is about 2.7 μm to 3.0 μm, and in Example 2, the thickness of the color filter layer (620) is about 0.9 μm to 1.5 μm. When the color filter layer (620) and the reflection adjustment layer (630) are applied on the low-reflection layer (300) as in Examples 1 and 2, it can be confirmed that the reflectance of both the red pixel (R1) in Example 1 and the red pixel (R2) in Example 2 is reduced to about 5% at a wavelength of about 580 nm or less. In this way, by applying a color filter layer (620) and a reflection adjustment layer (630) to a first organic light-emitting diode (OLED1) that emits red light, the light efficiency of the display device can be improved by lowering the reflectance of red light in the wavelength range of about 580 nm or less, specifically 400 nm to 550 nm.

[0162] Comparative Example 2 Example 1 Example 2 reflectivity 5.30% 5.30% 5.30% Efficiency ratio 125.6% 135.5% 137.5%

[0163] Referring to [Table 1] above, the efficiency ratios at the same reflectance of Comparative Example 2, Example 1, and Example 2 are shown. Example 1 and Example 2 are identical to Example 1 and Example 2 described above in FIG. 13. Comparative Example 2 is a structure that includes a low-reflection layer (300) and a reflection adjustment layer (630), but does not have a color filter layer (620) applied.

[0164] Based on the same reflectance of 5.30%, it can be seen that the efficiency of Comparative Example 2 increased by 125.6% compared to the structure employing a polarizer. In contrast, it can be seen that the efficiency of Example 1 and Example 2, in which a color filter layer (620) is applied corresponding to the first red pixel, improved by 135.5% and 137.5% respectively compared to the structure employing a polarizer. This confirms that an increase in efficiency of about 10% was achieved compared to Comparative Example 2.

[0165] (Based on equal reflectance) Comparative Example 2 Example 1 Example 2 Color filter layer thickness - 0.9㎛~1.5㎛ 2.7㎛~3.0㎛ Wavelength-specific color filter layer transmittance (based on 100% air) - @460nm 0~2.0%@550nm 0~1.0%@650nm 65~70% @460nm 12~30%@550nm 4~16%@650nm 80~90% Transmittance of the reflection-adjusting layer 60%~64% 64% ~ 72% Wavelength band star reflection adjustment layer transmittance @460nm 70~76%@550nm 60~65%@650nm 73~78% @460nm 76~90%@550nm 66~72%@650nm 79~86%

[0166] Referring to [Table 2] above, the transmittance (by wavelength range) at the same reflectance of Comparative Example 2, Example 1, and Example 2 is shown.

[0167] The first to third organic light-emitting diodes (OLED1, OLED2, OLED3) of a display device according to one embodiment may emit red, green, and blue light. At this time, the maximum peak wavelength of the blue light may be about 460 nm, the maximum peak wavelength of the green light may be about 550 nm, and the maximum peak wavelength of the red light may be about 650 nm.

[0168] The reflection adjusting layer (630) may have a transmittance of about 64% to 72%. More specifically, the reflection adjusting layer (630) may have a transmittance of about 76% to 90% at the maximum peak wavelength of blue light, a transmittance of about 66% to 72% at the maximum peak wavelength of green light, and a transmittance of about 79% to 86% at the maximum peak wavelength of red light.

[0169] Comparative Example 2 assumes a structure in which a color filter layer (620) is not provided, that is, in which a color filter layer is not disposed on a first organic light-emitting diode emitting red wavelength light, and only a reflection adjustment layer is provided. In this case, since the color filter layer cannot absorb light other than the red wavelength, the reflection adjustment layer must contain more pigment and / or dye than the reflection adjustment layer (630) according to one embodiment of the present invention. In the case of Comparative Example 2, the reflection adjustment layer may have a transmittance of about 60% to 64%. Since the reflection adjustment layer (630) according to one embodiment of the present invention has a transmittance of about 64% to 72%, it can be confirmed that the transmittance is improved compared to Comparative Example 2. Through this improvement in transmittance, the light efficiency of the display device can be improved.

[0170] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0171] 100: Substrate OLED1, OLED2, OLED3: First to third organic light-emitting diodes P1, P2, P3: 1st to 3rd pixels 200: Indicator layer 300: Anti-reflective layer 400: Thin film encapsulation layer 500: Touch sensing layer 600: Anti-reflective layer 610: Shading layer 610OP: Opening 620: Color filter layer 630: Reflection control layer

Claims

Claim 1 A substrate; a first light-emitting element emitting red light, a second light-emitting element emitting green light, and a third light-emitting element emitting blue light, disposed on the substrate and emitting light of different wavelengths to each realize a light-emitting region; a low-reflection layer disposed on the first light-emitting element, the second light-emitting element, and the third light-emitting element, comprising an inorganic material having an absorption coefficient (k) of 0.5 or more and 4.0 or less; a thin film encapsulation layer disposed on the low-reflection layer; a touch-sensing layer disposed on the thin film encapsulation layer; a light-blocking layer disposed directly on the touch-sensing layer corresponding to a non-light-emitting region between the light-emitting regions, and having a first aperture, a second aperture, and a third aperture corresponding to the first light-emitting element, the second light-emitting element, and the third light-emitting element, respectively; and a color filter layer disposed in the aperture of the light-blocking layer corresponding only to the first light-emitting element among the first light-emitting element, the second light-emitting element, and the third light-emitting element. A display device comprising: an organic layer disposed on the light-blocking layer and the color filter layer, comprising a dye, a pigment, or a combination thereof; wherein the first light-emitting element comprises a first intermediate layer comprising a first pixel electrode and a first light-emitting layer, the second light-emitting element comprises a second intermediate layer comprising a second pixel electrode and a second light-emitting layer, and the third light-emitting element comprises a third intermediate layer comprising a third pixel electrode and a third light-emitting layer, and the first light-emitting element, the second light-emitting element, and the third light-emitting element further comprise a counter electrode interposed between the first intermediate layer, the second intermediate layer, the third intermediate layer, and the low-reflection layer; wherein the color filter layer is disposed only in the first opening corresponding to the first light-emitting element emitting red light, and the organic layer is disposed to fill the second opening and the third opening, and the organic layer absorbs a second wavelength region of 585 nm to 605 nm in the visible light band. Claim 2 delete Claim 3 A display device according to claim 1, wherein the color filter layer transmits light in the red wavelength region. Claim 4 delete Claim 5 delete Claim 6 A display device according to claim 1, wherein the thickness of the color filter layer is 0.9㎛ to 3.0㎛. Claim 7 A display device according to claim 1, wherein the transmittance of the color filter layer is 70% or more in the red wavelength region and 50% or less in the green wavelength region and the blue wavelength region. Claim 8 A display device according to claim 1, wherein the color filter layer comprises a scattering agent. Claim 9 In claim 8, the scattering agent comprises at least one of TiO2, ZnO, Al2O3, SiO2, hollow silica, and polystyrene particles, a display device. Claim 10 In claim 8, the scattering agent is a display device having an average diameter of 50 nm or more and 500 nm or less. Claim 11 delete Claim 12 A display device according to claim 1, wherein the transmittance of the organic layer is 64% to 72%. Claim 13 A display device according to claim 1, wherein the low-reflection layer comprises at least one of a metal or a metal oxide. Claim 14 In claim 13, the anti-reflective layer comprises ytterbium (Yb), bismuth (Bi), cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper (Cu), calcium (Ca), or a combination thereof, a display device Claim 15 In paragraph 13, the above-mentioned low-reflection layer is a display device having a refractive index (n) of 1 or greater. Claim 16 A display device according to claim 1, wherein the organic layer selectively absorbs a first wavelength range. Claim 17 A display device according to claim 16, wherein the first wavelength range is 480 nm to 500 nm. Claim 18 A display device according to claim 1, further comprising a pixel defining film having an opening that covers the edges of the first pixel electrode, the second pixel electrode, and the third pixel electrode, and exposes the central portion of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein the pixel defining film comprises a light-blocking material. Claim 19 A display device according to claim 1, further comprising a capping layer disposed on the first light-emitting element, the second light-emitting element, and the third light-emitting element, the capping layer comprising an organic material, wherein the anti-reflection layer is disposed immediately above the capping layer. Claim 20 delete

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