Display apparatus and Method of manufacturing of the same

Abstract

One embodiment of the present invention discloses a display device comprising: a substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; and a pixel defining film having an opening that exposes a central portion of the pixel electrode, wherein the common layer includes a first region between a first display element and a second display element among the plurality of display elements, the first region has protrusions disposed spaced apart from each other, and the first region extends to the upper portion of the pixel defining film and at least a portion of the inner surface of the opening.

Description

Technology Field

[0001] Embodiments of the present invention relate to a display device and a method for manufacturing a display device. Background Technology

[0002] As the information society develops, the demand for display devices to display images is increasing in various forms. The field of display devices has rapidly evolved into flat panel display devices (FPDs) that are thin, lightweight, and capable of large areas, replacing bulky cathode ray tubes (CRTs). Flat panel display devices include liquid crystal display devices (LCDs), plasma display panels (PDPs), organic light-emitting display devices (OLEDs), and electrophoretic display devices (EDs).

[0003] Among display devices, an organic light-emitting display device includes an organic light-emitting diode equipped with a counter electrode, a pixel electrode, and a light-emitting layer. When voltage is applied to the counter electrode and the pixel electrode of the organic light-emitting diode, visible light is emitted from the light-emitting layer.

[0004] An organic light-emitting display device may include organic light-emitting diodes that emit red, green, and blue visible light to create a natural color screen, and the light-emitting layer of each organic light-emitting diode may be formed using an inkjet printing manufacturing method, etc.

[0005] In addition, display devices include a display area that implements images and a non-display area that does not implement images. Recently, research is actively underway to expand the display area by reducing the size of the non-display area, where wiring and other components of the display device are located. The problem to be solved

[0006] Embodiments of the present invention aim to provide a display device in which a light-emitting layer disposed on each of the organic light-emitting diodes can be easily formed, and a method for manufacturing such a display device.

[0007] In addition, embodiments of the present invention aim to provide a display device with a reduced non-display area and a method for manufacturing such a display device. means of solving the problem

[0008] One embodiment of the present invention discloses a display device comprising: a substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; and a pixel defining film having an opening that exposes a central portion of the pixel electrode, wherein the common layer includes a first region between a first display element and a second display element among the plurality of display elements, the first region has protrusions disposed spaced apart from each other, and the first region extends to the upper portion of the pixel defining film and at least a portion of the inner surface of the opening.

[0009] In one embodiment, the upper surface of the light-emitting layer may be parallel to the upper surface of the substrate.

[0010] In one embodiment, the light-emitting layer is disposed between the opposing electrode and the common layer and may extend from the central part of the pixel electrode to at least a portion of the inner surface of the opening.

[0011] In one embodiment, the upper surface of the light-emitting layer may be convex in the direction in which the pixel electrode is arranged on the substrate.

[0012] In one embodiment, the width of the second region in which the light-emitting layer is disposed among the common layers may be smaller than the width of the opening defined by the size in which the central part of the pixel electrode is exposed by the pixel defining film.

[0013] In one embodiment, the first region may extend to the inner surface of the opening.

[0014] In one embodiment, the light-emitting layer is disposed between the common layer and the opposing electrode and may be disposed inside the opening.

[0015] In one embodiment, the common layer in the first region may include a lower region in which the protrusions are each connected.

[0016] In one embodiment, at least one of the protrusions may have a rectangular shape in cross-section.

[0017] In one embodiment, the width at a first point of at least one of the protrusions may be smaller than the width at a second point that is closer to the lower region than the first point.

[0018] In one embodiment, the spacing between the protrusions may be 1 µm or more and 30 µm or less.

[0019] In one embodiment, the common layer includes a second region in which a light-emitting layer is disposed, and at least one of the first region and the second region may be a hydrophobic region, and the other of the first region and the second region may be a hydrophilic region.

[0020] Another embodiment of the present invention discloses a display device comprising: a substrate including a display area for displaying an image and a non-display area surrounding the display area; a display element on the display area including a thin-film transistor and a pixel electrode connected to the thin-film transistor, a light-emitting layer, and a counter electrode; and a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer disposed on the display element; wherein the first inorganic encapsulation layer on the non-display area has a boundary portion including protrusions spaced apart from each other, the boundary portion surrounds the display area, and the organic encapsulation layer is disposed from the display area to the inner boundary of the boundary portion.

[0021] In one embodiment, the second inorganic encapsulation layer may be in contact with the first inorganic encapsulation layer at the boundary portion.

[0022] In one embodiment, the first inorganic encapsulation layer at the boundary may include a lower region where the protrusions are connected.

[0023] In one embodiment, the first inorganic encapsulation layer at the boundary may have protrusions that are rectangular in cross-section.

[0024] In one embodiment, the width at a first point of at least one of the protrusions may be smaller than the width at a second point that is closer to the lower region than the first point.

[0025] In one embodiment, the first inorganic encapsulation layer includes an inner portion arranged from the display area to the inner boundary of the boundary portion, and at least one of the boundary portion and the inner portion is a hydrophilic region, and the other of the boundary portion and the inner portion may be a hydrophobic region.

[0026] Another embodiment of the present invention discloses a method for manufacturing a display device, comprising the steps of: preparing a substrate including a display area and a non-display area; forming display elements on the display area; forming a first inorganic encapsulation layer on the display elements; forming a boundary portion including protrusions spaced apart from each other on the first inorganic encapsulation layer disposed on the non-display area; and forming an organic encapsulation layer on the first inorganic encapsulation layer from the display area to the inner boundary of the boundary portion, and forming a second inorganic encapsulation layer on the organic encapsulation layer and the boundary portion.

[0027] In one embodiment, the second inorganic encapsulation layer may be in contact with the first inorganic encapsulation layer at the boundary. Effects of the invention

[0028] As described above, embodiments of the present invention have protrusions spaced apart from each other in a first region between a first display element and a first display element, so that different light-emitting layers can be easily formed on each of the organic light-emitting diodes emitting different colors.

[0029] In addition, the display device and the method for manufacturing the display device, which are embodiments of the present invention, can have a non-display area outside the display area minimized. Brief explanation of the drawing

[0030] FIG. 1 is a plan view of a display device according to one embodiment of the present invention. FIGS. 2a and FIGS. 2b are equivalent circuit diagrams of any one pixel included in a display device according to one embodiment of the present invention. FIG. 2c is a planar layout diagram of a pixel circuit according to one embodiment of the present invention. FIG. 3 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention. FIG. 4a is a cross-sectional view corresponding to a part of a first pixel and a second pixel adjacent to the first pixel, which is one of the display devices according to one embodiment of the present invention. FIG. 4b is an enlarged view of part A of the first functional layer corresponding to the first region of a display device according to one embodiment of the present invention. FIG. 4c is an enlarged view of part A of the first functional layer corresponding to the first region of a display device according to another embodiment of the present invention. FIGS. 5A, FIGS. 5B, and FIGS. 5C are cross-sectional views briefly illustrating a method for manufacturing a display device according to an embodiment of the present invention. FIG. 6 is a cross-sectional view corresponding to a part of a first pixel and a second pixel adjacent to the first pixel, which is one of the display devices according to another embodiment of the present invention. FIG. 7 is a plan view of a display device according to another embodiment of the present invention. FIG. 8 is a cross-sectional view schematically showing a display device according to another embodiment of the present invention. FIG. 9 is a cross-sectional view corresponding to a part of a first pixel, which is one of the display devices according to another embodiment of the present invention. FIGS. 10a, FIGS. 10b, FIGS. 10c, and FIGS. 10d are cross-sectional views briefly illustrating a method for manufacturing a display device according to another embodiment of the present invention. Specific details for implementing the invention

[0031] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0032] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0033] In the following embodiments, terms such as first, second, etc. are used not in a limiting sense, but for the purpose of distinguishing one component from another component.

[0034] In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0035] In the following embodiments, terms such as "include" or "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added.

[0036] In the following embodiments, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is directly on top of another part, but also cases where another film, region, or component is interposed in between.

[0037] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is illustrated.

[0038] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described consecutively may be performed substantially simultaneously or proceed in the reverse order of the description.

[0039] In the following embodiments, when it is stated that a membrane, region, component, etc. is connected, it includes not only cases where the membrane, region, or component is directly connected, but also cases where other membranes, regions, or components are interposed between them to form an indirect connection. For example, when it is stated in this specification that a membrane, region, component, etc. is electrically connected, it includes not only cases where the membrane, region, or component, etc. are directly electrically connected, but also cases where other membranes, regions, or components are interposed between them to form an indirect electrical connection.

[0040] FIG. 1 is a plan view of a display device according to one embodiment of the present invention.

[0041] Referring to FIG. 1, the display device (1) has a display area (DA) for displaying a predetermined image and a non-display area (NDA) outside the display area (DA).

[0042] The display device (1) is a device for displaying images and may be a portable mobile device such as a game console, a multimedia device, or a micro PC.

[0043] Multiple pixels (P) may be arranged in the display area (DA). Each of the multiple pixels (P) arranged in the display area (DA) may emit red, green, or blue light, and the display area (DA) may provide a predetermined image using the light emitted from the pixels (P).

[0044] Each pixel (P) can be electrically connected to a scan line (SL) extended in a first direction (e.g., x direction) and a data line (DL) extended in a second direction (e.g., y direction).

[0045] FIGS. 2a and FIGS. 2b are equivalent circuit diagrams of any one pixel (P) included in a display device according to one embodiment of the present invention.

[0046] Referring to FIG. 2a, the pixel (P) may include a pixel circuit (PC) and an organic light-emitting diode (OLED) as a display element connected to the pixel circuit (PC).

[0047] The pixel circuit (PC) may include a driving thin-film transistor (T1), a switching thin-film transistor (T2), and a storage capacitor (Cst). Each pixel (P) may emit, for example, red, green, or blue light through an organic light-emitting diode (OLED), or emit red, green, blue, or white light.

[0048] The switching thin-film transistor (T2) is connected to the scan line (SL) and the data line (DL), and can transmit the data voltage input from the data line (DL) to the driving thin-film transistor (T1) based on the switching voltage input from the scan line (SL). The storage capacitor (Cst) is connected to the switching thin-film transistor (T2) and the driving voltage line (PL), and can store a voltage corresponding to the difference between the voltage received from the switching thin-film transistor (T2) and the first power supply voltage (ELVDD) supplied to the driving voltage line (PL).

[0049] The driving thin-film transistor (T1) is connected to the driving voltage line (PL) and the storage capacitor (Cst), and can control the driving current flowing from the driving voltage line (PL) to the organic light-emitting diode (OLED) in correspondence with the voltage value stored in the storage capacitor (Cst). The organic light-emitting diode (OLED) can emit light having a predetermined brightness by the driving current. The counter electrode (e.g., cathode) of the organic light-emitting diode (OLED) can receive a second power supply voltage (ELVSS).

[0050] FIG. 2a illustrates that the pixel circuit (PC) includes two thin-film transistors and one storage capacitor, but in some embodiments, the number of thin-film transistors and the number of storage capacitors may vary depending on the design of the pixel circuit (PC). For example, the pixel circuit (PC) may include one or more additional thin-film transistors in addition to the two thin-film transistors mentioned above.

[0051] Referring to FIG. 2b, the pixel circuit (PC) may include a plurality of thin-film transistors and a storage capacitor. The thin-film transistors and the storage capacitor may be connected to signal lines (SL, SIL, EL, DL), an initialization voltage line (VL), and a driving voltage line (PL).

[0052] FIG. 2b illustrates that each pixel (P) is connected to signal lines (SL, SIL, EL, DL), an initial voltage line (VL), and a driving voltage line (PL). However, in another embodiment, at least one of the signal lines (SL, SIL, EL, DL), the initial voltage line (VL), and the driving voltage line (PL) may be shared among neighboring pixels.

[0053] A plurality of thin-film transistors may include a driving thin-film transistor (T1), a switching thin-film transistor (T2), a compensation thin-film transistor (T3), a first initialization thin-film transistor (T4), an operation control thin-film transistor (T5), a light emission control thin-film transistor (T6), and a second initialization thin-film transistor (T7).

[0054] The signal line includes a scan line (SL) that transmits a scan signal (GW), a previous scan line (SIL) that transmits a previous scan signal (SI) to a first initialization thin-film transistor (T4) and a second initialization thin-film transistor (T7), a light emission control line (EL) that transmits a light emission control signal (EM) to an operation control thin-film transistor (T5) and a light emission control thin-film transistor (T6), and a data line (DL) that intersects with the scan line (SL) and transmits a data signal (Dm). The driving voltage line (PL) transmits a first power supply voltage (ELVDD) to the driving thin-film transistor (T1), and the initialization voltage line (VL) transmits an initialization voltage (Vint) that initializes the driving thin-film transistor (T1) and the pixel electrode.

[0055] The driving gate electrode (G1) of the driving thin-film transistor (T1) is connected to the lower electrode (Cst1) of the storage capacitor (Cst), the driving source electrode (S1) of the driving thin-film transistor (T1) is connected to the driving voltage line (PL) via the operation control thin-film transistor (T5), and the driving drain electrode (D1) of the driving thin-film transistor (T1) is electrically connected to the pixel electrode of the organic light-emitting diode (OLED) via the light emission control thin-film transistor (T6). The driving thin-film transistor (T1) receives a data signal (Dm) according to the switching operation of the switching thin-film transistor (T2) and transmits a driving current (I) to the organic light-emitting diode (OLED). OLED supplies ).

[0056] The switching gate electrode (G2) of the switching thin-film transistor (T2) is connected to the scan line (SL), the switching source electrode (S2) of the switching thin-film transistor (T2) is connected to the data line (DL), and the switching drain electrode (D2) of the switching thin-film transistor (T2) is connected to the driving source electrode (S1) of the driving thin-film transistor (T1) and is connected to the driving voltage line (PL) via the operation control thin-film transistor (T5). The switching thin-film transistor (T2) is turned on according to the scan signal (GW) received through the scan line (SL) and performs a switching operation to transmit the data signal (Dm) transmitted to the data line (DL) to the driving source electrode (S1) of the driving thin-film transistor (T1).

[0057] The compensation gate electrode (G3) of the compensation thin film transistor (T3) is connected to the scan line (SL), and the compensation source electrode (S3) of the compensation thin film transistor (T3) is connected to the driving drain electrode (D1) of the driving thin film transistor (T1) and is connected to the pixel electrode of the organic light-emitting diode (OLED) via the light-emitting control thin film transistor (T6). The compensation drain electrode (D3) of the compensation thin film transistor (T3) is connected to the lower electrode (Cst1) of the storage capacitor (Cst), the first initialization drain electrode (D4) of the first initialization thin film transistor (T4), and the driving gate electrode (G1) of the driving thin film transistor (T1). The compensation thin film transistor (T3) is turned on according to the scan signal (GW) received through the scan line (SL) to electrically connect the driving gate electrode (G1) and the driving drain electrode (D1) of the driving thin film transistor (T1), thereby diode-connecting the driving thin film transistor (T1).

[0058] The first initialization gate electrode (G4) of the first initialization thin film transistor (T4) is connected to the previous scan line (SIL), and the first initialization source electrode (S4) of the first initialization thin film transistor (T4) is connected to the second initialization drain electrode (D7) of the second initialization thin film transistor (T7) and the initialization voltage line (VL), and the first initialization drain electrode (D4) of the first initialization thin film transistor (T4) is connected to the lower electrode (Cst1) of the storage capacitor (Cst), the compensation drain electrode (D3) of the compensation thin film transistor (T3), and the driving gate electrode (G1) of the driving thin film transistor (T1). The first initialization thin film transistor (T4) is turned on according to the previous scan signal (GI) received through the previous scan line (SIL) and transmits an initialization voltage (Vint) to the driving gate electrode (G1) of the driving thin film transistor (T1) to perform an initialization operation that initializes the voltage of the driving gate electrode (G1) of the driving thin film transistor (T1).

[0059] The operation control gate electrode (G5) of the operation control thin film transistor (T5) is connected to the light emission control line (EL), the operation control source electrode (S5) of the operation control thin film transistor (T5) is connected to the driving voltage line (PL), and the operation control drain electrode (D5) of the operation control thin film transistor (T5) is connected to the driving source electrode (S1) of the driving thin film transistor (T1) and the switching drain electrode (D2) of the switching thin film transistor (T2).

[0060] The light-emitting control gate electrode (G6) of the light-emitting control thin film transistor (T6) is connected to the light-emitting control line (EL), and the light-emitting control source electrode (S6) of the light-emitting control thin film transistor (T6) is connected to the driving drain electrode (D1) of the driving thin film transistor (T1) and the compensation source electrode (S3) of the compensation thin film transistor (T3), and the light-emitting control drain electrode (D6) of the light-emitting control thin film transistor (T6) is electrically connected to the second initialization source electrode (S7) of the second initialization thin film transistor (T7) and the pixel electrode of the organic light-emitting diode (OLED).

[0061] The operation control thin-film transistor (T5) and the light emission control thin-film transistor (T6) are simultaneously turned on according to the light emission control signal (EM) received through the light emission control line (EL), so that the first power supply voltage (ELVDD) is transmitted to the organic light-emitting diode (OLED) and the driving current (I) to the organic light-emitting diode (OLED) OLED Make ) flow.

[0062] The second initialization gate electrode (G7) of the second initialization thin film transistor (T7) is connected to the previous scan line (SIL), and the second initialization source electrode (S7) of the second initialization thin film transistor (T7) is connected to the light-emitting control drain electrode (D6) of the light-emitting control thin film transistor (T6) and the pixel electrode of the organic light-emitting diode (OLED), and the second initialization drain electrode (D7) of the second initialization thin film transistor (T7) is connected to the first initialization source electrode (S4) of the first initialization thin film transistor (T4) and the initialization voltage line (VL). The second initialization thin film transistor (T7) is turned on according to the previous scan signal (GI) received through the previous scan line (SIL) to initialize the pixel electrode of the organic light-emitting diode (OLED).

[0063] FIG. 2b illustrates a case where the first initialization thin film transistor (T4) and the second initialization thin film transistor (T7) are connected to the previous scan line (SIL), but as another embodiment, the first initialization thin film transistor (T4) is connected to the previous scan line (SIL) and driven according to the previous scan signal (GI), and the second initialization thin film transistor (T7) is connected to a separate signal line (e.g., a subsequent scan line) and driven according to the signal transmitted to the signal line.

[0064] The upper electrode (Cst2) of the storage capacitor (Cst) is connected to the driving voltage line (PL), and the counter electrode of the organic light-emitting diode (OLED) is connected to the second power supply voltage (ELVSS). Accordingly, the organic light-emitting diode (OLED) receives a driving current (I) from the driving thin-film transistor (T1). OLED An image can be displayed by receiving ) and emitting light.

[0065] In FIG. 2b, the compensation thin film transistor (T3) and the first initialization thin film transistor (T4) are shown having dual gate electrodes, but the compensation thin film transistor (T3) and the first initialization thin film transistor (T4) may have a single gate electrode.

[0066] FIG. 2c is a planar layout of a pixel circuit (PC) according to one embodiment of the present invention.

[0067] Referring to FIG. 2c, a driving thin-film transistor (T1), a switching thin-film transistor (T2), a compensation thin-film transistor (T3), a first initialization thin-film transistor (T4), an operation control thin-film transistor (T5), a light emission control thin-film transistor (T6), and a second initialization thin-film transistor (T7) are arranged along a semiconductor layer (1130). The semiconductor layer (1130) is arranged on a substrate on which a buffer layer, which is an inorganic insulating material, is formed.

[0068] Some regions of the semiconductor layer (1130) correspond to the semiconductor layers of the driving thin-film transistor (T1), the switching thin-film transistor (T2), the compensation thin-film transistor (T3), the first initialization thin-film transistor (T4), the operation control thin-film transistor (T5), the light emission control thin-film transistor (T6), and the second initialization thin-film transistor (T7). In other words, the semiconductor layers of the driving thin-film transistor (T1), the switching thin-film transistor (T2), the compensation thin-film transistor (T3), the first initialization thin-film transistor (T4), the operation control thin-film transistor (T5), the light emission control thin-film transistor (T6), and the second initialization thin-film transistor (T7) can be understood as being connected to each other and curved in various shapes.

[0069] The semiconductor layer (1130) includes a channel region and source regions and drain regions on both sides of the channel region, and the source region and drain region can be understood as the source electrode and drain electrode of the corresponding thin-film transistor. For convenience, the source region and drain region are referred to as the source electrode and drain electrode, respectively.

[0070] The driving thin-film transistor (T1) includes a driving gate electrode (G1) that overlaps the driving channel region, and driving source electrodes (S1) and driving drain electrodes (D1) on both sides of the driving channel region. The driving channel region that overlaps the driving gate electrode (G1) has a folded shape, such as an omega shape, thereby allowing a long channel length to be formed within a narrow space. When the length of the driving channel region is long, the driving range of the gate voltage is widened, allowing for more precise control of the gradation of light emitted from the organic light-emitting diode (OLED) and improving display quality.

[0071] The switching thin-film transistor (T2) includes a switching gate electrode (G2) that overlaps the switching channel region, and switching source electrodes (S2) and switching drain electrodes (D2) on both sides of the switching channel region. The switching drain electrode (D2) can be connected to the driving source electrode (S1).

[0072] The compensation thin film transistor (T3) is a dual thin film transistor and may be equipped with compensation gate electrodes (G3) that overlap two compensation channel regions, and may include a compensation source electrode (S3) and a compensation drain electrode (D3) disposed on both sides. The compensation thin film transistor (T3) may be connected to the driving gate electrode (G1) of the driving thin film transistor (T1) through a node connection line (1174) to be described later.

[0073] The first initialization thin film transistor (T4) is a dual thin film transistor and may include a first initialization gate electrode (G4) that overlaps two first initialization channel regions, and a first initialization source electrode (S4) and a first initialization drain electrode (D4) disposed on both sides.

[0074] The operation control thin film transistor (T5) may include an operation control gate electrode (G5) that overlaps the operation control channel region, and operation control source electrodes (S4) and operation control drain electrodes (D5) located on both sides. The operation control drain electrode (D5) may be connected to the driving source electrode (S1).

[0075] The light-emitting control thin film transistor (T6) may include a light-emitting control gate electrode (G6) that overlaps the light-emitting control channel region, and a light-emitting control source electrode (S6) and a light-emitting control drain electrode (D6) located on both sides. The light-emitting control source electrode (S6) may be connected to the driving drain electrode (D1).

[0076] The second initialization thin film transistor (T7) may include a second initialization gate electrode (G7) overlapping the second initialization channel region, and a second initialization source electrode (S7) and a second initialization drain electrode (D7) located on both sides.

[0077] The aforementioned thin-film transistors can be connected to signal lines (SL, SIL, EL, DL), initialization voltage lines (VL), and driving voltage lines (PL).

[0078] Scan lines (SL), previous scan lines (SIL), light emission control lines (EL), and driving gate electrodes (G1) may be arranged on the aforementioned semiconductor layer (1130) with insulating layer(s) in between.

[0079] The scan line (SL) may be extended along a first direction. Regions of the scan line (SL) may correspond to switching and compensation gate electrodes (G4, G7). For example, regions of the scan line (SL) that overlap with the channel regions of the first and second initialization driving thin-film transistors (T4, T7) may each be the first and second initialization gate electrodes (G4, G7).

[0080] The previous scanline (SIL) extends along the first direction, and some regions may correspond to the first and second initialization gate electrodes (G4, G7), respectively. For example, the regions of the previous scanline (SIL) that overlap with the channel regions of the first and second initialization driving thin-film transistors (T4, T7) may correspond to the first and second initialization gate electrodes (G4, G7), respectively.

[0081] The light emission control line (EL) extends along the first direction. Regions of the light emission control line (EL) may correspond to operation control and light emission control gate electrodes (G5, G6), respectively. For example, the region of the light emission control line (EL) that overlaps with the channel regions of the operation control and light emission control driving thin-film transistors (T6, T7) may correspond to the operation control and light emission control gate electrodes (G5, G6), respectively.

[0082] The driving gate electrode (G1) is a floating electrode and can be connected to the compensation thin-film transistor (T3) through the aforementioned node connection line (1174).

[0083] An electrode voltage line (HL) may be disposed on the aforementioned scan line (SL), previous scan line (SIL), light emission control line (EL), and driving gate electrode (G1) with insulating layer(s) in between.

[0084] The electrode voltage line (HL) may be extended along a first direction to intersect the data line (DL) and the driving voltage line (PL). A portion of the electrode voltage line (HL) may cover at least a portion of the driving gate electrode (G1) and, together with the driving gate electrode (G1), form a storage capacitor (Cst). For example, the driving gate electrode (G1) may become the lower electrode (Cst1) of the storage capacitor (Cst), and a portion of the electrode voltage line (HL) may become the upper electrode (Cst2) of the storage capacitor (Cst).

[0085] The upper electrode (Cst2) of the storage capacitor (Cst) is electrically connected to the driving voltage line (PL). In this regard, the electrode voltage line (HL) can be connected to the driving voltage line (PL) placed on the electrode voltage line (HL) through a contact hole (CNT). Thus, the electrode voltage line (HL) can have the same voltage level (constant voltage) as the driving voltage line (PL). For example, the electrode voltage line (HL) can have a constant voltage of +5V. The electrode voltage line (HL) can be understood as a transverse driving voltage line.

[0086] Since the driving voltage line (PL) extends along the second direction and the electrode voltage line (HL) electrically connected to the driving voltage line (PL) extends along the first direction intersecting the second direction, the multiple driving voltage lines (PL) and electrode voltage lines (HL) can form a mesh structure in the display area.

[0087] In this embodiment, the electrode voltage line (HL) is placed on a different layer from the driving voltage line (PL), and the resistivity of the electrode voltage line (HL) can be provided to be greater than the resistivity of the driving voltage line (PL).

[0088] On the electrode voltage line (HL), a data line (DL), a driving voltage line (PL), an initialization connection line (1173), and a node connection line (1174) may be arranged with insulating layer(s) in between.

[0089] The data line (DL) extends in a second direction and can be connected to the switching source electrode (S2) of the switching thin-film transistor (T2) through the contact hole (1154). A portion of the data line (DL) can be understood as the switching source electrode.

[0090] The driving voltage line (PL) extends in a second direction and is connected to the electrode voltage line (HL) through the contact hole (CNT) as described above. Additionally, it can be connected to the operation control thin film transistor (T5) through the contact hole (1155). The driving voltage line (PL) can be connected to the operation control drain electrode (D5) through the contact hole (1155).

[0091] One end of the initialization connection line (1173) is connected to the first and second initialization thin-film transistors (T4, T7) through the contact hole (1152), and the other end can be connected to the initialization voltage line (VL) to be described later through the contact hole (1151).

[0092] One end of the node connection line (1174) is connected to the compensation drain electrode (D3) through the contact hole (1156), and the other end can be connected to the driving gate electrode (G1) through the contact hole (1157).

[0093] An initial voltage line (VL) may be placed on the data line (DL), driving voltage line (PL), initial connection line (1173), and node connection line (1174) with an insulating layer(s) in between.

[0094] The initialization voltage line (VL) extends in a first direction. The initialization voltage line (VL) can be connected to the first and second initialization driving thin-film transistors (T4, T7) via the initialization connection line (1173). The initialization voltage line (VL) can have a constant voltage (e.g., -2V, etc.).

[0095] The initial voltage line (VL) is placed on the same layer as the upper electrode (Cst2), i.e., the electrode voltage line (HL), and may contain the same material. In the display area (DA), the pixel electrode of the organic light-emitting diode (OLED) may be connected to a light-emitting control thin-film transistor (T6). The pixel electrode is connected to a connecting metal (1175) through a contact hole (1163), and the connecting metal (1175) may be connected to a light-emitting control drain electrode (D6) through a contact hole (1153).

[0096] FIG. 3 is a cross-sectional view schematically showing a display device according to one embodiment of the present invention.

[0097] Referring to FIG. 3, a pixel circuit layer (PCL) including pixel circuits and insulating layers may be disposed on a substrate (101) of a display device (1), and a display element layer (DEL) including a plurality of display elements may be disposed on the pixel circuit layer (PCL).

[0098] The substrate (101) may be glass or may include a polymer resin such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate, etc.

[0099] A barrier layer (not shown) may be further included between the pixel circuit layer (PCL) and the substrate (101). The barrier layer is a barrier layer that prevents the penetration of external foreign substances, and is silicon nitride (SiN x , x>0), silicon oxide (SiO x It may be a single layer or a multilayer containing inorganic materials such as , x>0).

[0100] The display element layer (DEL) may include display elements, such as the organic light-emitting diode (OLED) described above. The pixel circuit layer (PCL) may include pixel circuits connected to each of the organic light-emitting diodes (OLEDs) and insulating layers. The pixel circuit layer (PCL) may include a plurality of transistors and storage capacitors, and insulating layers interposed between them.

[0101] Display elements may be covered by an encapsulating member such as a thin film encapsulating layer (TFE). The thin film encapsulating layer (TFE) may include at least one inorganic encapsulating layer and at least one organic encapsulating layer covering the display element layer (DEL). The inorganic encapsulating layer may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulating layer may include a polymer-based material. Polymer-based materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic encapsulating layer may include acrylate.

[0102] In another embodiment, the thin film encapsulation layer (TFE) may have a structure in which a substrate (101) and an upper substrate, which is a transparent member, are joined by a sealing member so that the internal space between the substrate (101) and the upper substrate is sealed. At this time, a hygroscopic agent or a filler may be located in the internal space. The sealing member may be a sealant, and in another embodiment, the sealing member may be composed of a material that is cured by a laser. For example, the sealing member may be a frit. Specifically, the sealing member may be composed of an organic sealant such as a urethane resin, an epoxy resin, an acrylic resin, or an inorganic sealant such as silicone. As a urethane resin, for example, urethane acrylate may be used. As an acrylic resin, for example, butyl acrylate or ethylhelyl acrylate may be used. Meanwhile, the sealing member may be composed of a material that is cured by heat.

[0103] A touch electrode layer (TSL) including touch electrodes is disposed on a thin film encapsulation layer (TFE), and an optical functional layer (OFL) may be disposed on the touch electrode layer (TSL). The touch electrode layer (TSL) can acquire coordinate information based on external input, such as a touch event. The optical functional layer (OFL) can reduce the reflectance of light (external light) incident from the outside toward the display device (1) and / or improve the color purity of light emitted from the display device (1). In one embodiment, the optical functional layer (OFL) may include a phase retarder and a polarizer. The phase retarder may be a film type or a liquid crystal coating type, and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. The film type may include a stretched synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a predetermined arrangement. The phase retarder and polarizer may further include a protective film.

[0104] In another embodiment, the optical functional layer (OFL) may include a black matrix and color filters. The color filters may be arranged considering the color of light emitted from each pixel of the display device (1). Each of the color filters may include a red, green, or blue pigment or dye. Alternatively, each of the color filters may further include quantum dots in addition to the aforementioned pigment or dye. Alternatively, some of the color filters may not include the aforementioned pigment or dye and may include scattering particles such as titanium oxide.

[0105] In another embodiment, the optical functional layer (OFL) may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. The first reflected light and the second reflected light reflected from the first reflective layer and the second reflective layer, respectively, may undergo destructive interference, and accordingly, the external light reflectance may be reduced.

[0106] An adhesive member may be disposed between the touch electrode layer (TSL) and the optical functional layer (OFL). The adhesive member may be any general type known in the art without limitation. The adhesive member may be a pressure-sensitive adhesive (PSA).

[0107] FIG. 4a is a cross-sectional view corresponding to a part of a first pixel (P1) and a second pixel (P2) adjacent to the first pixel (P1), which is one of the display devices according to one embodiment of the present invention. FIG. 4b is an enlarged view of part A of the first functional layer (123) corresponding to the first region (R1) of the display device according to one embodiment of the present invention. FIG. 4c is an enlarged view of part A of the first functional layer (123) corresponding to the first region (R1) of the display device according to another embodiment of the present invention.

[0108] A pixel circuit layer (PCL) is disposed on a substrate (101). FIG. 4a illustrates that the pixel circuit layer (PCL) includes a buffer layer (111), a first gate insulating layer (113a), a second gate insulating layer (113b), an interlayer insulating layer (115), and a planarizing insulating layer (117) disposed below or / and above a thin film transistor and components of the thin film transistor. Meanwhile, the thin film transistor may include a first thin film transistor (TFT1) and a second thin film transistor (TFT2).

[0109] Since the configuration of the second thin-film transistor (TFT2) is identical to that of the first thin-film transistor (TFT1), the first thin-film transistor (TFT1) will be explained in detail below, and a detailed description of the second thin-film transistor (TFT2) will be omitted.

[0110] The buffer layer (111) may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may be a single layer or a multilayer containing the aforementioned inorganic insulating material.

[0111] The first thin-film transistor (TFT1) includes a semiconductor layer (112), and the semiconductor layer (112) may include polysilicon. Alternatively, the semiconductor layer (112) may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The semiconductor layer (112) may include a channel region (112c) and a drain region (112a) and a source region (112b) respectively disposed on both sides of the channel region (112c). The gate electrode (114) may overlap with the channel region (112c).

[0112] The gate electrode (114) may include a low-resistance metal material. The gate electrode (114) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials.

[0113] The first gate insulating layer (113a) between the semiconductor layer (112) and the gate electrode (114) is silicon oxide (SiO2) or silicon nitride (SiN x It may include inorganic insulating materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0114] The second gate insulating layer (113b) may be provided to cover the gate electrode (114). Similar to the first gate insulating layer (113a), the second gate insulating layer (113b) may be made of silicon oxide (SiO2) or silicon nitride (SiN2). x It may include inorganic insulating materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0115] An upper electrode (Cst2) of a storage capacitor (Cst) may be disposed on the upper portion of the second gate insulating layer (113b). The upper electrode (Cst2) may overlap with the gate electrode (114) below it. At this time, the gate electrode (114) and the upper electrode (Cst2) that overlap with the second gate insulating layer (113b) in between may form a storage capacitor (Cst). That is, the gate electrode (114) may function as the lower electrode (Cst1) of the storage capacitor (Cst).

[0116] In this way, the storage capacitor (Cst) and the first thin-film transistor (TFT1) may be formed in an overlapping manner. In some embodiments, the storage capacitor (Cst) may be formed so as not to overlap with the first thin-film transistor (TFT1).

[0117] The upper electrode (Cst2) may comprise aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Ni), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu), and may be a single layer or a multilayer of the aforementioned materials.

[0118] The interlayer insulating layer (115) can cover the upper electrode (Cst2). The interlayer insulating layer (115) is silicon oxide (SiO2) or silicon nitride (SiN x It may include silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2), etc. The interlayer insulating layer (115) may be a single layer or a multilayer containing the aforementioned inorganic insulating material.

[0119] The drain electrode (116a) and the source electrode (116b) may each be located on the interlayer insulating layer (115). The drain electrode (116a) and the source electrode (116b) may include a material with good conductivity. The drain electrode (116a) and the source electrode (116b) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials. In one embodiment, the drain electrode (116a) and the source electrode (116b) may have a multilayer structure of Ti / Al / Ti.

[0120] The flattening insulating layer (117) may include an organic insulating layer. The flattening insulating layer (117) may include an organic insulating material such as a general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and blends thereof.

[0121] A display element layer (DEL) is disposed on the pixel circuit layer (PCL) of the above-described structure. The display element layer (DEL) includes a first organic light-emitting diode (OLED1) and a second organic light-emitting diode (OLED2), wherein the pixel electrode (121) of the first organic light-emitting diode (OLED1) can be electrically connected to the first thin-film transistor (TFT1) through the contact hole of the planarization insulating layer (117). Additionally, the pixel electrode of the second organic light-emitting diode (OLED2) can be electrically connected to the second thin-film transistor (TFT2) through the contact hole of the planarization insulating layer (117).

[0122] Since the second organic light-emitting diode (OLED2) is identical or similar to the first organic light-emitting diode (OLED1) below, the first organic light-emitting diode (OLED1) will be described in detail, and a detailed description of the second organic light-emitting diode (OLED2) will be omitted.

[0123] The pixel electrode (121) may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In another embodiment, the pixel electrode (221) may include a reflective film comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. In another embodiment, the pixel electrode (121) may further include a film formed of ITO, IZO, ZnO, or In2O3 above and below the aforementioned reflective film.

[0124] A pixel defining film (119) having an opening (119OP) that exposes the central portion of the pixel electrode (121) is disposed on the pixel electrode (121). The pixel defining film (119) may include an organic insulating material and / or an inorganic insulating material. The opening (119OP) may define a light-emitting region (hereinafter referred to as the first light-emitting region, EA1) of light emitted from the first organic light-emitting diode (OLED1). For example, the width of the opening (119OP) may correspond to the width of the first light-emitting region (EA1). Specifically, the width of the opening (119OP) may be defined as a size that exposes the central portion of the pixel electrode (121).

[0125] The first functional layer (123) may be arranged to cover the pixel definition film (119). The first functional layer (123) may be a single layer or a multilayer. The first functional layer (123) may be a hole transport layer (HTL) having a single-layer structure. Alternatively, the first functional layer (123) may include a hole injection layer (HIL) and a hole transport layer (HTL). The first functional layer (123) may be a common layer formed to cover the entire substrate (101).

[0126] The first functional layer (123) may include a first region (R1) between the first organic light-emitting diode (OLED1) and the second organic light-emitting diode (OLED2). In one embodiment, the first region (R1) may be placed on the upper surface of the pixel defining film (119). In another embodiment, the first region (R1) may extend to at least a portion of the inner surface of the opening (119OP). For example, the first region (R1) may be placed adjacent to the first light-emitting region (EA1). Additionally, the first region (R1) may be placed adjacent to the light-emitting region (hereinafter referred to as the second light-emitting region, EA2) of the light emitted from the second organic light-emitting diode (OLED2). Specifically, the first region (R1) can be positioned on the upper part of the pixel defining film (119) and on the side of the pixel defining film (119) where the opening (119OP) is positioned.

[0127] The first functional layer (123) included in the first region (R1) may have first protrusions spaced apart from each other. Referring to FIG. 4b, the first functional layer (123) may have first protrusions (123a) in the first region (R1). Additionally, the first functional layer (123) may include first lower regions (123b) in the first region (R1) to which the first protrusions (123a) are respectively connected.

[0128] In one embodiment, the first protrusions (123a) may be spaced apart from each other. For example, the first protrusions (123a) may be spaced apart by a first interval (d1). The first interval (d1) may be the distance between the centers of adjacent first protrusions (123a). In another embodiment, the first protrusions (123a) may be spaced apart by various intervals. For example, the spacing between the first protrusions (123a) may be 1 µm or more and 30 µm or less. Specifically, the first interval (d1) may be 10 µm.

[0129] The size of the first protrusion (123a) may be 1 µm or more and 30 µm or less. Specifically, the size of the first protrusion (123a) may be 10 µm. Referring to FIG. 4b, the first protrusion (123a) is shown as having the same size, but in other embodiments, the first protrusion (123a) may have various sizes.

[0130] In one embodiment, the first protrusion (123a) may have a rectangular shape in cross-section. However, in another embodiment, the first protrusion (123a) may have a polygonal shape in cross-section, such as a triangle or a trapezoid. In yet another embodiment, the first protrusion (123a) may include a curved portion.

[0131] Referring to FIG. 4c, the cross-sectional shape of the first protrusion (123a') may be trapezoidal. Specifically, the width (U1) at the first point of the first protrusion (123a') may be smaller than the width (U2) at the second point, which is closer to the first lower region (123b') than the first point.

[0132] Referring again to FIG. 4a, the first functional layer (123) may include a second region (R2) in which a light-emitting layer (125), to be described later, is disposed. In one embodiment, the width of the second region (R2) may be the same as the width of the first light-emitting region (EA1) or the second light-emitting region (EA2). However, in another embodiment, the width of the second region (R2) may be greater than the width of the first light-emitting region (EA1) or the second light-emitting region (EA2).

[0133] From another perspective, the first functional layer (123) may include a first region (R1) and a second region (R2). And, the second region (R2) may be a part of the first functional layer (123) that is not the first region (R1).

[0134] In one embodiment, the second region (R2) may be a portion that does not have the first protrusion (123a), unlike the first region (R1). Specifically, the first protrusion (123a) may be placed in the first region (R1), and the first protrusion (123a) may not be placed in the second region (R2). Although not illustrated in the drawings, in another embodiment, the second region (R2) may have the protrusion and the first region (R1) may not have the protrusion. However, for convenience of explanation, the description will focus on the case where the first region (R1) has the first protrusion (123a) and the second region (R2) does not have the first protrusion (123a).

[0135] At least one of the first region (R1) and the second region (R2) may be a hydrophobic region, and the other of the first region (R1) and the second region (R2) may be a hydrophilic region. For example, the first region (R1) may be a hydrophobic region and the second region (R2) may be a hydrophilic region. Specifically, the first region (R1) having the first protrusion (123a) among the first functional layer (123) may be a hydrophobic region, and the second region (R2) may be a hydrophilic region. That is, due to the first protrusion (123a), the contact angle with another material (e.g., a light-emitting layer) in the first region (R1) may be 150 degrees or more. Therefore, the first region (R1) may exhibit superhydrophobicity and superhydrophobicity.

[0136] In another embodiment, the first region (R1) may be a hydrophilic region and the second region (R2) may be a hydrophobic region. Specifically, the contact angle with another material (e.g., a light-emitting layer) in the second region (R2) may be 150 degrees or more. Thus, the second region (R2) may be hydrophobic and the first region (R1) may be hydrophilic.

[0137] A light-emitting layer (125) may be disposed in the opening (119OP) of the pixel defining film (119). Specifically, the light-emitting layer (125) may be disposed on the second region (R2) of the first functional layer (123). The light-emitting layer (125) may include a polymer or low-molecular-weight organic material that emits light of a predetermined color.

[0138] In one embodiment, the upper surface of the light-emitting layer (125) may be parallel to the upper surface of the substrate (101). For example, the upper surface of the light-emitting layer (125) may be arranged uniformly in the x-direction. Accordingly, the upper surface of the light-emitting layer (125) may be flat.

[0139] Both ends of the light-emitting layer (125) may be positioned adjacent to the first region (R1). For example, one side of the light-emitting layer (125) may be in contact with the first region (R1) between the first organic light-emitting diode (OLED1) and the second organic light-emitting diode (OLED2). Specifically, the light-emitting layer (125) may be positioned extending from the central part of the pixel electrode (121) to at least a portion of the inner surface of the opening (119OP).

[0140] At least one of the light-emitting layer (125) and the first region (R1) may be a hydrophilic region and the other may be a hydrophobic region. For example, if the light-emitting layer (125) is hydrophilic, the first region (R1) of the first functional layer (123) may be hydrophobic. Additionally, the second region (R2) of the first functional layer (123) may be hydrophilic. Therefore, the light-emitting layer (125) may be primarily placed in the second region (R2). As another example, if the light-emitting layer (125) is hydrophobic, the first region (R1) of the first functional layer (123) may be hydrophilic. Additionally, the second region (R2) of the first functional layer (123) may be hydrophobic. Therefore, the light-emitting layer (125) may be primarily placed in the second region (R2).

[0141] A second functional layer (127) may be disposed on the upper portion of the light-emitting layer (125). The second functional layer (127) may be a single layer or a multilayer. The second functional layer (127) may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer (127) may be integrally formed to cover the entire substrate (101).

[0142] A counter electrode (129) may be disposed on the upper portion of the second functional layer (127). The counter electrode (129) may be made of a conductive material with a low work function. For example, the counter electrode (129) may include a (semi)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the counter electrode (129) may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi)transparent layer comprising the aforementioned materials.

[0143] The arrangement of the first region (R1) and the light-emitting layer (125) as described above may be intended to flatten the shape of the upper surface of the light-emitting layer (125). Furthermore, it may be intended to control the shape of the upper surface of the light-emitting layer (125). Specifically, the first functional layer (123) includes a first region (R1) and a second region (R2), and at least one of the first region (R1) and the second region (R2) may be a hydrophobic region and the other may be a hydrophilic region. For example, if the light-emitting layer (125) includes a hydrophilic material, the first region (R1) may be provided as a hydrophobic region and the second region (R2) as a hydrophilic region. Accordingly, the light-emitting layer (125) may have a large contact angle with the first region (R1) and a small contact angle with the second region (R2).

[0144] If the surface of the first functional layer (123) is equally hydrophilic or hydrophobic, the shape of the upper surface of the light-emitting layer (125) disposed on the first functional layer (123) cannot be controlled. For example, due to the cohesive force between the first functional layer (123) and the light-emitting layer (125) disposed in the opening (119OP), the light-emitting layer (125) may have a concave shape as it moves further away from the substrate (101).

[0145] In this embodiment, at least one of the first region (R1) and the second region (R2) of the first functional layer (123) is provided as a hydrophilic region and the other as a hydrophobic region, so that the shape of the upper surface of the light-emitting layer (125) placed in the opening (119OP) can be controlled.

[0146] Hereinafter, with reference to FIGS. 5a to c, a method for manufacturing a display device including a first region (R1) and a second region (R2) will be described in detail.

[0147] FIGS. 5a to 5c are cross-sectional views briefly illustrating a method for manufacturing a display device according to an embodiment of the present invention. In FIGS. 5a to 5c, reference numerals identical to those in FIGS. 4a and 4b denote identical components, so redundant descriptions will be omitted.

[0148] Referring to FIG. 5a, first, a substrate (101) is prepared, and a pixel circuit layer (PCL) is formed on the substrate (101).

[0149] Next, a display element layer (DEL) can be formed on the pixel circuit layer (PCL). That is, a pixel electrode (121) can be formed, and a pixel defining film (119) having an opening (119OP) that exposes the central part of the pixel electrode (121) can be formed. Additionally, a first functional layer (123) can be formed on the pixel defining film (119).

[0150] Referring to FIG. 5b, in one embodiment, a first protrusion (123a) may be formed on the surface of the first functional layer (123) corresponding to the first region (R1). Specifically, the first protrusion (123a) may be formed on the upper portion of the pixel defining film (119) included in the first region (R1) and on at least a portion of the inner surface of the opening (119OP). In another embodiment, the first region (R1) may be extended to the inner surface of the opening (119OP) to form the first protrusion (123a). In yet another embodiment, although not shown in the drawings, the first protrusion (123a) may be formed only on the surface of the first functional layer (123) corresponding to the second region (R2). However, for convenience of explanation, the case in which the first protrusion (123a) is formed in the first region (R1) will be described in detail.

[0151] The first protrusions (123a) may be formed spaced apart from each other. In one embodiment, the first protrusions (123a) may be formed spaced apart by a first interval (d1). In another embodiment, the first protrusions (123a) may be formed spaced apart by various intervals. For example, the spacing between the first protrusions (123a) may be formed to be 0.1 µm or more and 30 µm or less. Specifically, the first interval (d1) may be formed to be 10 µm.

[0152] The size of the first protrusion (123a) can be formed to be 1 µm or more and 30 µm or less. Specifically, the size of the first protrusion (123a) can be formed to be 10 µm. Referring to FIG. 5b, the first protrusion (123a) is shown to be formed with the same size, but in other embodiments, the first protrusion (123a) can be formed with various sizes.

[0153] In one embodiment, the first protrusion (123a) may be formed in a rectangular shape in cross-section. However, in another embodiment, the first protrusion (123a) may be formed in a polygonal shape, such as a triangle or a trapezoid, in cross-section. In yet another embodiment, the first protrusion (123a) may form a curved portion.

[0154] In one embodiment, the first functional layer (123) may include a second region (R2) in which a light-emitting layer (125) is formed. In one embodiment, the width of the second region (R2) may be formed to be equal to the width of the first light-emitting region (not shown) or the second light-emitting region (not shown). In another embodiment, the width of the second region (R2) may be formed to be greater than the width of the first light-emitting region or the second light-emitting region.

[0155] The step of forming a protrusion in the first region (R1) may utilize a laser beam generated from a laser source (200). The laser source (200) may be any general laser known in the art, such as a UV pico laser or a Femto super laser, without limitation. Additionally, the laser source (200) may be changed depending on the material contained in the first functional layer (123).

[0156] Next, referring to FIG. 5c, a light-emitting layer (125) may be formed. Specifically, the light-emitting layer (125) may be formed on the second region (R2) of the first functional layer (123). The light-emitting layer (125) may be formed by including a polymer or low-molecular-weight organic material that emits light of a predetermined color. The light-emitting layer (125) may be formed using conventional methods such as inkjet printing, spin coating, or thermal transfer using a laser. Below, the case in which the light-emitting layer (125) is formed using an inkjet printing method will be described in detail.

[0157] In one embodiment, the upper surface of the light-emitting layer (125) may be formed parallel to the upper surface of the substrate (101). For example, the upper surface of the light-emitting layer (125) may be formed uniformly in the x-direction of FIG. 5c. Accordingly, the upper surface of the light-emitting layer (125) may be formed flat.

[0158] Both ends of the light-emitting layer (125) may be formed adjacent to the first region (R1). For example, one side of the light-emitting layer (125) may be formed to be in contact with the first region (R1). Specifically, the light-emitting layer (125) may be formed to extend from the central part of the pixel electrode (121) to at least a portion of the inner surface of the opening (119OP).

[0159] Forming the first region (R1) as described above and forming the light-emitting layer (125) may be intended to form the upper surface of the light-emitting layer (125) flat. Furthermore, it may be intended to control the shape of the upper surface of the light-emitting layer (125). Specifically, at least one of the first region (R1) and the second region (R2) may be a hydrophobic region and the other may be a hydrophilic region. For example, if the light-emitting layer (125) includes a hydrophilic material, the first region (R1) may be formed as a hydrophobic region and the second region (R2) as a hydrophilic region. Accordingly, the contact angle between the first region (R1) and the light-emitting layer (125) may be formed large. When forming the protrusion of the first region (R1), the shape of the upper surface of the light-emitting layer (125) can be controlled while controlling the width of the first region (R1) placed in the opening (119OP).

[0160] Additionally, when manufacturing the light-emitting layer (125) using an inkjet printing method, accurate alignment between the inkjet outlet (not shown) and the second region (R2) may be required. If accurate alignment between the inkjet outlet and the second region (R2) is not achieved, the light-emitting layer (125) may be formed in areas other than the opening (119OP). That is, ink may accumulate on the upper surface of the pixel defining film (119), resulting in defective organic light-emitting diodes.

[0161] However, as in the embodiment of the present invention, if at least one of the first region (R1) and the second region (R2) is formed as a hydrophilic region and the other as a hydrophobic region to form the light-emitting layer (125) on the opening (119OP), the above problem can be solved. That is, even if the light-emitting layer (125) is formed on the first region (R1) because the inkjet outlet and the second region (R2) are not accurately aligned, the light-emitting layer (125) can flow into the second region (R2) to enable accurate patterning.

[0162] FIG. 6 is a cross-sectional view corresponding to a part of a first pixel (P1) and a second pixel (P2) adjacent to the first pixel (P1), which is one of the display devices according to another embodiment of the present invention.

[0163] In FIG. 6, the same reference numerals as in FIG. 4a denote the same components, so a detailed description is omitted.

[0164] Referring to FIG. 6, a pixel circuit layer (PCL) and a display element layer (DEL) may be disposed on a substrate (101). Additionally, a first functional layer (123) included in a first region (R1-1) may have first protrusions disposed spaced apart from each other.

[0165] Meanwhile, the first region (R1-1) may extend to the inner surface of the opening (119OP). Accordingly, the first region (R1-1) may be entirely disposed on the upper surface of the pixel defining film (119) and the opening (119OP) between the first organic light-emitting diode (OLED1) and the second organic light-emitting diode (OLED2).

[0166] The width of the second region (R2-1) may be smaller than the width of the opening (119OP). Specifically, the second region (R2-1) may be a portion of the first functional layer (123) that is not the first region (R1-1). If the first region (R1-1) extends to the inner side of the opening (119OP), the width of the second region (R2-1) may be reduced. Accordingly, the width of the second region (R2-1) may be smaller than the width of the opening (119OP).

[0167] The light-emitting layer (125) may be disposed inside the opening (119OP). Meanwhile, the light-emitting layer (125) may be disposed in the second region (R2-1). Since the width of the second region (R2-1) may be smaller than the width of the opening (119OP), the light-emitting layer (125) may be disposed inside the opening (119OP).

[0168] The light-emitting layer (125) may be convex in the direction in which the pixel electrode (121) is arranged on the substrate (101). Since at least one of the light-emitting layer (125) and the first region (R1-1) is a hydrophobic region and the other is a hydrophilic region, the contact angle between the light-emitting layer (125) and the first region (R1-1) may be large. Specifically, the light-emitting layer (125) may be arranged in an arc shape in cross-section.

[0169] Accordingly, in an embodiment of the present invention, the shape of the light-emitting layer (125) can be controlled by adjusting the width of the first region (R1-1).

[0170] FIG. 7 is a plan view of a display device (1) according to another embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of a display device (1) according to another embodiment of the present invention.

[0171] In FIGS. 7 and 8, the same reference numerals as in FIGS. 1 and 3 denote the same components, so redundant descriptions will be omitted.

[0172] In one embodiment, the display device (1) may include a liquid crystal display, an electrophoretic display, an organic light-emitting display, an inorganic light-emitting display, a field emission display, a surface-conduction electron-emitter display, a quantum dot display, a plasma display, a cathode ray display, etc. Hereinafter, an organic light-emitting display is used as an example, but embodiments of the present invention can be applied to various types of display devices as described above.

[0173] Referring to FIG. 7, a boundary portion (BP) may be provided in the inorganic encapsulation layer to surround a display area (DA). Specifically, the boundary portion (BP) may be positioned on a non-display area (NDA) to surround the display area (DA).

[0174] Referring to FIG. 8, the thin film encapsulation layer (TFE) may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In one embodiment, the thin film encapsulation layer (TFE) may include a first inorganic encapsulation layer (131), an organic encapsulation layer (132), and a second inorganic encapsulation layer (133). In another embodiment, the thin film encapsulation layer (TFE) may further include at least one inorganic encapsulation layer and at least one organic encapsulation layer, and may be arranged by stacking them alternately. For convenience of explanation, the following description will focus on the case where the thin film encapsulation layer (TFE) includes the first inorganic encapsulation layer (131), the organic encapsulation layer (132), and the second inorganic encapsulation layer (133).

[0175] Meanwhile, the boundary portion (BP) is disposed on the first inorganic sealing layer (131), and the organic sealing layer (132) may be disposed from the indication area (DA) to the inner boundary of the boundary portion (BP). In one embodiment, the second inorganic sealing layer (133) may be in contact with the first inorganic sealing layer (131) and the boundary portion (BP).

[0176] FIG. 9 is a cross-sectional view corresponding to a part of a first pixel (P1) of one of the display devices according to another embodiment of the present invention.

[0177] In FIG. 9, the same reference numerals as in FIG. 4a denote the same components, so redundant descriptions will be omitted.

[0178] Meanwhile, the first inorganic sealing layer (131) included in the boundary portion (BP) may have second protrusions (131a) spaced apart from each other. Specifically, the first inorganic sealing layer (131) may have second protrusions (131a) in the boundary portion (BP), and the first inorganic sealing layer (131) may include a second lower region (131b) in the boundary portion (BP) to which the second protrusions (131a) are each connected.

[0179] In one embodiment, the second protrusions (131a) may be spaced apart from each other. For example, the second protrusions (131a) may be spaced apart by a second interval (d2). The second interval (d2) may be the distance between the centers of adjacent second protrusions (131a). In another embodiment, the second protrusions (131a) may be spaced apart from each other at various intervals. For example, the spacing between the second protrusions (131a) may be 1 µm or more and 30 µm or less. Specifically, the second interval (d2) may be 10 µm.

[0180] The size of the second protrusion (131a) may be 1 µm or more and 30 µm or less. Specifically, the size of the second protrusion (131a) may be 10 µm. Referring to FIG. 9, the second protrusion (131a) is shown as having the same size, but in other embodiments, the second protrusion (131a) may have various sizes.

[0181] In one embodiment, the second protrusion (131a) may have a rectangular shape in cross-section. However, in another embodiment, the second protrusion (131a) may have a polygonal shape in cross-section, such as a triangle or a trapezoid. Specifically, the width at a first point of the second protrusion (131a) may be smaller than the width at a second point that is closer to the second lower region (131b) than the first point. In yet another embodiment, the second protrusion (131a) may include a curved portion.

[0182] The first inorganic encapsulation layer (131) may include an inner portion (IP) positioned from the display area (DA) to the inner boundary of the boundary portion (BP). At least one of the boundary portion (BP) and the inner portion (IP) may be a hydrophilic region, and the other may be a hydrophobic region. Specifically, the boundary portion (BP) having the second protrusion (131a) among the first inorganic encapsulation layer (131) may be a hydrophobic region, and the inner portion (IP) may be a hydrophilic region. That is, due to the second protrusion (131a), the contact angle with another material (e.g., an organic encapsulation layer) at the boundary portion (BP) may be 150 degrees or more. Therefore, the boundary portion (BP) may exhibit superhydrophobicity or superhydrophobicity. As another example, the boundary portion (BP) may be a hydrophilic region and the inner portion (IP) may be a hydrophobic region.

[0183] The organic encapsulation layer (132) may be disposed on the first inorganic encapsulation layer (131). In particular, as described above, the organic encapsulation layer (132) may be disposed from the display area (DA) to the inner boundary of the boundary portion (BP). In other words, the organic encapsulation layer (132) may be disposed on the inner portion (IP) and not on the boundary portion (BP).

[0184] At least one of the boundary portions (BP) of the organic sealing layer (132) and the first inorganic sealing layer (131) may be hydrophilic, and the other may be hydrophobic. For example, if the organic sealing layer (132) contains a hydrophobic material, the boundary portion (BP) of the first inorganic sealing layer (131) may be hydrophilic. Additionally, the inner portion (IP) of the first inorganic sealing layer (131) may be hydrophobic. As another example, if the organic sealing layer (132) contains a hydrophilic material, the boundary portion (BP) of the first inorganic sealing layer (131) may be hydrophobic. Additionally, the inner portion (IP) of the first inorganic sealing layer (131) may be hydrophilic. Accordingly, the organic encapsulation layer (132) may be concentrated in the inner portion (IP) of the first inorganic encapsulation layer (131) and may not be placed in the boundary portion (BP) of the first inorganic encapsulation layer (131).

[0185] The arrangement of the boundary portion (BP) and the inner portion (IP) as described above may be intended to prevent the organic encapsulation layer (132) from overflowing onto the non-marked area (NDA) outside the boundary portion (BP).

[0186] If the surface of the first inorganic encapsulation layer (131) is equally hydrophilic or hydrophobic, a dam structure or groove must be further placed to control the flow of the organic encapsulation layer (132) placed on the first inorganic encapsulation layer (131). Such a dam structure or groove can increase the size of the non-display area (NDA).

[0187] As in the embodiment of the present invention, if the boundary portion (BP) on which the second protrusion (131a) is formed is placed on the non-display area (NDA), the flow of the organic encapsulation layer (132) can be controlled without providing an additional dam structure or groove. Therefore, the area of ​​the non-display area (NDA) can be reduced.

[0188] Hereinafter, a method for manufacturing a display device in which a boundary portion (BP) is formed on the first inorganic sealing layer (131) will be described in detail.

[0189] FIGS. 10a to 10d are cross-sectional views briefly illustrating a method for manufacturing a display device according to another embodiment of the present invention. In FIGS. 10a to 10d, reference numerals identical to those in FIG. 9 denote identical components, so redundant descriptions will be omitted.

[0190] Referring to FIG. 10a, a substrate including a display area (DA) and a non-display area (NDA) can be prepared first.

[0191] Next, a pixel circuit layer (PCL) can be formed on the display area (DA), and a display element layer can be formed on the pixel circuit layer (PCL).

[0192] Next, a first inorganic encapsulation layer (131) can be formed on the first organic light-emitting diode (OLED1) and the pixel defining film (119). The first inorganic encapsulation layer (131) can be formed by employing any general deposition method known in the art without limitation. Since the first inorganic encapsulation layer (131) is formed along the underlying structure, the upper surface of the first inorganic encapsulation layer (131) may not be flat.

[0193] Referring to FIG. 10b, a boundary portion (BP) can be formed including second protrusions (131a) spaced apart from each other on a first inorganic encapsulation layer (131) disposed on a non-display area (NDA). The boundary portion (BP) can be formed to surround a display area (DA).

[0194] Meanwhile, the first inorganic sealing layer (131) included in the boundary portion (BP) may form second protrusions (131a) spaced apart from each other. Additionally, the first inorganic sealing layer (131) may form second lower regions (131b) in the boundary portion (BP) to which the second protrusions (131a) are each connected.

[0195] In one embodiment, the second protrusions (131a) may be formed spaced apart from each other. For example, the second protrusions (131a) may be formed spaced apart by a second interval (d2). In another embodiment, the second protrusions (131a) may be formed spaced apart from each other by various intervals. For example, the spacing between the second protrusions (131a) may be formed to be 1 µm or more and 30 µm or less. Specifically, the second interval (d2) may be formed to be 10 µm.

[0196] The size of the second protrusion (131a) can be formed to be 1 µm or more and 30 µm or less. Specifically, the size of the second protrusion (131a) can be 10 µm. Referring to FIG. 10b, the second protrusion (131a) is shown to be formed with the same size, but in other embodiments, the second protrusion (131a) can be formed with various sizes.

[0197] In one embodiment, the second protrusion (131a) may be formed in a rectangular shape in cross-section. Although not shown in the drawings, in another embodiment, the second protrusion (131a) may be formed in a polygonal shape, such as a triangle or a trapezoid, in cross-section. Specifically, the width at a first point of the second protrusion (131a) may be formed to be smaller than the width at a second point that is closer to the second lower region (131b) than the first point. In yet another embodiment, the second protrusion (131a) may be formed to include a curved portion.

[0198] The first inorganic encapsulation layer (131) may form an inner portion (IP) positioned from the indication area (DA) to the inner boundary of the boundary portion (BP). At least one of the boundary portion (BP) and the inner portion (IP) may be formed as a hydrophilic region, and the other as a hydrophobic region. Specifically, the boundary portion (BP) having the second protrusion (131a) among the first inorganic encapsulation layer (131) may be formed as a hydrophobic region, and the inner portion (IP) may be formed as a hydrophilic region.

[0199] The step of forming a second protrusion (131a) at the boundary (BP) may utilize a laser beam generated from a laser source (200). The laser source (200) may be any general laser known in the art, such as a UV pico laser or a Femto super laser, without limitation. Additionally, the laser source (200) may be changed depending on the material contained in the first inorganic encapsulation layer (131).

[0200] Referring to FIG. 10c, an organic encapsulation layer (132) may be disposed on the first inorganic encapsulation layer (131). Specifically, the organic encapsulation layer (132) may be formed from the display area (DA) to the inner boundary of the inter-boundary portion (BP). In other words, the organic encapsulation layer (132) may be formed on the inner portion (IP). Since at least one of the organic encapsulation layer (132) and the boundary portion (BP) is hydrophilic and the other is hydrophobic, the organic encapsulation layer (132) may not be formed on the boundary portion (BP).

[0201] The organic sealing layer (132) can be formed such that its upper surface is approximately flat, unlike the first inorganic sealing layer (131).

[0202] Next, referring to FIG. 10d, a second inorganic sealing layer (133) may be formed on the organic sealing layer (132) and the boundary portion (BP). Unlike the organic sealing layer (132), the second inorganic sealing layer (133) may be arranged according to the shape of the structure below it.

[0203] Meanwhile, the second inorganic sealing layer (133) may be disposed on the first inorganic sealing layer (131) at the boundary portion (BP). Specifically, the second inorganic sealing layer (133) may be formed to be in contact with the first inorganic sealing layer (131) at the boundary portion (BP).

[0204] As in the embodiment of the present invention, if the boundary portion (BP) on which the second protrusion (131a) is formed is placed on the non-marking area (NDA), the flow of the organic encapsulation layer (132) can be controlled without providing an additional dam structure or groove. Thus, the area of ​​the non-marking area (NDA) can be reduced.

[0205] In addition, as in the embodiment of the present invention, the process of manufacturing a display device can be simplified by using a laser source (200) to form at least one of the boundary portion (BP) and the inner portion (IP) as a hydrophilic region and the other as a hydrophobic region.

[0206] Although the present invention has been described with reference to an embodiment illustrated in the drawings, this is merely illustrative, and those skilled in the art will understand that various modifications and variations of the embodiments are possible therefrom. Accordingly, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0207] EA1, EA2: 1st light-emitting region, 2nd light-emitting region Cst1, Cst2: Lower electrode, Upper electrode P1, P2: 1st pixel, 2nd pixel d1, d2: 1st interval, 2nd interval R1, R1-1: Area 1 R2, R2-1: Area 2 101: Board 111: Buffer layer 112: Semiconductor layer 113a: First gate insulating layer 113b: Second gate insulation layer 114: Gate electrode 115: Interlayer insulation layer 116a: Drain electrode 116b: Source electrode 117: Flattening insulation layer 119OP: Opening 119: Pixel definition membrane 121: Pixel electrode 123: First functional layer 123a, 123a': First protrusion 123b, 123b': 1st sub-region 125: Emissive layer 127: Second functional layer 129: Counter electrode 131: First inorganic sealing layer 131a: Second protrusion 131b: Second sub-region 132: Organic bag layer 133: Second Inorganic Sealing Layer 200: Laser source

Claims

Claim 1 A substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; A display device comprising: a pixel defining film having an opening that exposes the central portion of the pixel electrode; wherein the common layer comprises a first region between a first display element and a second display element among the plurality of display elements, and a second region in which the light-emitting layer is disposed; wherein the first region of the common layer extends to at least a portion of the upper portion of the pixel defining film and the inner surface of the opening; wherein the first region of the common layer comprises a plurality of protrusions protruding from the upper portion of the common layer, wherein the plurality of protrusions are spaced apart from each other and are disposed to at least a portion of the upper portion of the pixel defining film and the inner surface of the opening; wherein the protrusions protrude in the direction of the opposing electrode; wherein the first region of the common layer comprises a lower region to which the lower portions of the protrusions are respectively connected; wherein at least one of the first region of the common layer and the second region of the common layer is a hydrophobic region, and the other of the first region of the common layer and the second region of the common layer is a hydrophilic region, and wherein the hydrophobic region and the hydrophilic region are provided in the common layer. Claim 2 A display device according to claim 1, wherein the upper surface of the light-emitting layer is parallel to the upper surface of the substrate. Claim 3 A display device according to claim 1, wherein the light-emitting layer is disposed between the opposing electrode and the common layer and extends from the central part of the pixel electrode to at least a part of the inner surface of the opening. Claim 4 A display device according to claim 1, wherein the upper surface of the light-emitting layer is convex in the direction in which the pixel electrode is arranged on the substrate. Claim 5 A display device according to claim 4, wherein the width of the second region in which the light-emitting layer is disposed among the common layers is smaller than the width of the opening defined by the size in which the central part of the pixel electrode is exposed by the pixel defining film. Claim 6 In paragraph 4, the first region is a display device extending to the inner surface of the opening. Claim 7 A display device according to claim 4, wherein the light-emitting layer is disposed between the common layer and the opposing electrode and disposed inside the opening. Claim 8 delete Claim 9 A display device according to claim 1, wherein at least one of the protrusions is rectangular in cross-section. Claim 10 A display device according to claim 1, wherein the width at a first point of at least one of the protrusions is smaller than the width at a second point that is closer to the lower region than the first point. Claim 11 A display device according to claim 1, wherein the spacing between the protrusions spaced apart from each other is 1 µm or more and 30 µm or less. Claim 12 delete Claim 13 A substrate comprising a display area for displaying an image and a non-display area surrounding the display area; a display element comprising a thin-film transistor on the display area and a pixel electrode connected to the thin-film transistor, a light-emitting layer, and a counter electrode; A display device comprising: a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer disposed on the display element; wherein the first inorganic encapsulation layer comprises a boundary portion including protrusions spaced apart from each other in the non-display area, and an inner portion disposed from the display area to the inner boundary of the boundary portion, the boundary portion surrounds the display area, the organic encapsulation layer is disposed from the display area to the inner boundary of the boundary portion, the protrusions protrude in the direction of the second inorganic encapsulation layer, and the first inorganic encapsulation layer comprises a lower portion to which the lower ends of the protrusions are respectively connected, at least one of the boundary portion and the inner portion of the first inorganic encapsulation layer is a hydrophilic region, and the other of the boundary portion and the inner portion of the first inorganic encapsulation layer is a hydrophobic region, and the hydrophilic region and the hydrophobic region are provided in the first inorganic encapsulation layer. Claim 14 In paragraph 13, the display device wherein the second inorganic encapsulation layer contacts the first inorganic encapsulation layer at the boundary portion. Claim 15 delete Claim 16 In paragraph 13, the first inorganic encapsulation layer at the boundary portion is a display device in which the protrusions are square in cross-section. Claim 17 A display device according to claim 13, wherein the width at a first point of at least one of the protrusions is smaller than the width at a second point that is closer to the lower region than the first point. Claim 18 delete Claim 19 A step of preparing a substrate including a display area and a non-display area; a step of forming display elements on the display area; a step of forming a first inorganic encapsulation layer on the display elements; and a step of forming a boundary portion including protrusions spaced apart from each other on the first inorganic encapsulation layer disposed on the non-display area. A method for manufacturing a display device, comprising the steps of: forming an organic encapsulation layer on the first inorganic encapsulation layer from the display area to the inner boundary of the boundary portion; and forming a second inorganic encapsulation layer on the organic encapsulation layer and the boundary portion, wherein the first inorganic encapsulation layer includes an inner portion arranged from the display area to the inner boundary of the boundary portion, the protrusions protrude in the direction of the second inorganic encapsulation layer, and the first inorganic encapsulation layer includes a lower portion to which the lower ends of the protrusions are respectively connected, and at least one of the boundary portion and the inner portion of the first inorganic encapsulation layer is a hydrophilic region, and the other of the boundary portion and the inner portion of the first inorganic encapsulation layer is a hydrophobic region, and the hydrophilic region and the hydrophobic region are provided in the first inorganic encapsulation layer. Claim 20 A method for manufacturing a display device according to claim 19, wherein the second inorganic encapsulation layer contacts the first inorganic encapsulation layer at the boundary portion.

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