Method of processing substrate

Abstract

A substrate processing method according to one aspect of the present invention may include the steps of: placing a substrate on a substrate support; supplying a first process gas to a first remote plasma generator and forming a first plasma atmosphere to activate the first process gas; supplying a second process gas different from the first process gas to a second remote plasma generator and forming a second plasma atmosphere to activate the second process gas; and supplying at least one of the activated first process gas, the activated second process gas, and a third process gas generated by the reaction of the activated first process gas and the activated second process gas to a reaction space through a gas injection unit to process the substrate.

Description

Technology Field

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a substrate processing method using a substrate processing apparatus. Background Technology

[0002] To manufacture semiconductor devices, various processes are performed in a substrate processing apparatus under a vacuum atmosphere. For example, a substrate may be loaded into a process chamber, and processes such as depositing a thin film or etching a thin film on the substrate may be carried out. Here, the substrate is supported by a substrate support installed inside the process chamber, and a process gas can be injected onto the substrate through a gas injection unit installed on the upper part of the substrate support.

[0003] Activation of process gases using plasma is required to enhance reactivity and ensure precise process control during substrate processing. Furthermore, instead of generating plasma directly within the process chamber, remote plasma is generated within a remote plasma generator (RPG) to activate the process gases, thereby reducing substrate damage caused by direct plasma.

[0004] However, when using two or more process gases, it is difficult to activate all of them under optimal conditions using a single remote plasma generator. Since ignition conditions may differ for each process gas, it is difficult to apply ignition conditions that satisfy all of them. Furthermore, because the radical species to be generated may differ for each process gas, plasma conditions must be varied accordingly; however, it is difficult to apply these different plasma conditions using a single remote plasma generator. The problem to be solved

[0005] The present invention aims to solve various problems, including those mentioned above, by providing a substrate processing method that allows for different control of activation conditions for each process gas by applying independent plasma conditions to two or more process gases. However, this objective is exemplary and does not limit the scope of the present invention. means of solving the problem

[0006] A substrate processing method according to one aspect of the present invention for solving the above problem comprises: a process chamber having a reaction space formed therein; a substrate support member coupled to the process chamber; a gas injection member coupled to the process chamber so as to face the substrate support member and for injecting process gases into the reaction space; a first remote plasma generator connected to the gas injection member and capable of forming a first plasma atmosphere; and a second remote plasma generator connected to the gas injection member and capable of forming a second plasma atmosphere different from the first plasma atmosphere, the method comprising the steps of: placing a substrate on the substrate support member; supplying a first process gas to the first remote plasma generator and forming the first plasma atmosphere to activate the first process gas; supplying a second process gas different from the first process gas to the second remote plasma generator and forming the second plasma atmosphere to activate the second process gas; and the activated first process gas, the activated second process gas, and the activated first process gas and The method may include the step of processing the substrate by supplying at least one of the third process gases generated by the reaction of the activated second process gas to the reaction space through the gas injection unit.

[0007] In the above-described substrate processing method, the substrate processing device includes a mixer interposed between the first remote plasma generator and the gas injection unit and between the second remote plasma generator and the gas injection unit, and in the step of processing the substrate, the activated first process gas and the activated second process gas may be mixed with each other before being supplied to the gas injection unit and supplied onto the substrate.

[0008] In the above-described substrate processing method, in the step of processing the substrate, the activated first process gas and the activated second process gas react with each other in the mixer to produce the third process gas, and the third process gas can be supplied onto the substrate through the gas injection unit.

[0009] In the above-described substrate processing method, in the step of processing the substrate, the third process gas may be supplied periodically for a plurality of cycles.

[0010] In the above-described substrate processing method, in the step of processing the substrate, each of the plurality of cycles includes the step of heating the substrate after supplying the third process gas to the substrate, and in the step of processing the substrate, an oxide film on the substrate may be etched.

[0011] In the above substrate processing method, the first process gas may include NH3, and the second process gas may include NF3.

[0012] In the above substrate processing method, the first RF power supplied to the first remote plasma generator to form the first plasma atmosphere may be greater than the second RF power supplied to the second remote plasma generator to form the second plasma atmosphere.

[0013] In the above-described substrate processing method, in the step of processing the substrate, the activated first process gas and the activated second process gas may be supplied alternately at least once.

[0014] In the above-described substrate processing method, in the step of activating the second process gas, the first process gas is supplied together with the second process gas to the second remote plasma generator and the second plasma atmosphere is formed so that the first process gas is also activated together with the second process gas.

[0015] In the above substrate processing method, in the step of activating the second process gas, the first process gas activated in the second remote plasma generator and the activated second process gas may react to generate the third process gas. Effects of the invention

[0016] According to the substrate processing method according to some embodiments of the present invention as described above, independent plasma conditions can be applied to two or more process gases to control activation conditions differently for each process gas. Of course, the scope of the present invention is not limited by this effect. Brief explanation of the drawing

[0017] FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus for illustrating a substrate processing method according to some embodiments of the present invention. FIG. 2 is a flowchart showing a substrate processing method according to one embodiment of the present invention. FIG. 3 is a flowchart showing the steps of processing a substrate according to one example in a substrate processing method according to some embodiments. FIG. 4 is a flowchart showing the steps of processing a substrate according to another example in a substrate processing method according to some embodiments. FIGS. 5A and FIGS. 5B are graphs showing the change in H peak value and the etching thickness, respectively, depending on the flow rate of NF3 in a substrate processing method according to some embodiments of the present invention. Specific details for implementing the invention

[0018] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0019] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0020] FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus (100) for showing a substrate processing method according to some embodiments of the present invention.

[0021] Referring to FIG. 1, the substrate processing device (100) may include a process chamber (110), a gas injection unit (120), a substrate support unit (130), a first remote plasma generator (150a), and a second remote plasma generator (150b).

[0022] More specifically, a reaction space (112) in which a substrate (50) can be processed may be formed in the process chamber (110). The process chamber (110) may be connected to a vacuum pump (not shown) through an exhaust pipe (114) to form a vacuum atmosphere. Furthermore, the process chamber (110) may include an inlet / outlet for loading the substrate (50) into or unloading it from the reaction space (112), and a gate structure (not shown) for opening and closing the inlet / outlet. The process chamber (110) may be provided in various shapes and may include, for example, a side wall portion defining the reaction space (112) and a cover portion located on the top of the side wall portion, such as a top lead.

[0023] A gas injection unit (120) may be coupled to the process chamber (110) to supply process gases supplied from outside the process chamber (110) into the reaction space (112). The gas injection unit (120) may be coupled to the process chamber (110) so as to face the substrate support (130). For example, the gas injection unit (120) may be installed on the upper part of the process chamber (110) to inject process gas onto a substrate (S) placed on the substrate support (130). More specifically, the gas injection unit (120) may include an inlet through which process gas is introduced via a gas pipe (152), a blocker plate for dispersing the process gas that has passed through the inlet, and a distribution plate for injecting the process gas into the reaction space (112).

[0024] In some embodiments, the gas injection unit (120) may have various forms, such as a shower head or a nozzle. If the gas injection unit (120) is in the form of a shower head, the gas injection unit (120) may be coupled to the process chamber (110) in a manner that partially covers the upper part of the process chamber (110). For example, the gas injection unit (120) may be coupled to the cover or side wall of the process chamber (110).

[0025] A substrate support member (130) may be coupled to a process chamber (110) to support a substrate (S) within a reaction space (112). For example, the substrate support member (130) may be installed in the process chamber (110) facing a gas injection member (120). The top plate shape of the substrate support member (130) generally corresponds to the shape of the substrate (S), but is not limited thereto and may be provided in various shapes larger than the substrate (S) so as to stably seat the substrate (S).

[0026] Furthermore, the shaft (135) of the substrate support (130) may be connected to an external motor (not shown) to enable vertical movement, and in this case, a bellows tube (not shown) may be connected between the process chamber (110) and the shaft (135) to maintain airtightness. Furthermore, since the substrate support (130) is configured to place a substrate (S) thereon, it may be referred to as a substrate mounting part, a susceptor, etc.

[0027] In some embodiments, the substrate support (130) may further include an electrostatic electrode to apply electrostatic force to the substrate (S) and fix it on top thereof. In this case, the electrostatic electrode may receive DC power from an electrostatic power supply.

[0028] The first remote plasma generator (150a) and the second remote plasma generator (150b) are positioned outside the process chamber (110) and can be connected to a gas injection unit (120) to supply process gases to the process chamber (110). For example, the first remote plasma generator (150a) can activate some of the process gases by forming a first plasma atmosphere inside, and the second remote plasma generator (150b) can activate some of the process gases by forming a second plasma atmosphere inside.

[0029] For example, the first remote plasma generator (150a) can purify the first process gas and supply it to the process chamber (110), and the second remote plasma generator (150b) can purify the second process gas and supply it to the process chamber (110). The first process gas can be introduced into the first remote plasma generator (150a) through the first gas pipe (154a), and the second process gas can be introduced into the second remote plasma generator (150b) through the second gas pipe (154b).

[0030] Furthermore, a first plasma power source (140a) for applying power may be connected to the first remote plasma generator (150a), and a second plasma power source (140b) for applying power may be connected to the second remote plasma generator (150b). For example, the first plasma power source (140a) and the second plasma power source (140b) may each include at least one RF power source to apply at least one RF (radio frequency) power.

[0031] For example, the first remote plasma generator (150a) and the second remote plasma generator (150b) can form a plasma atmosphere using an inductive coupled plasma (ICP) method, a capacitive coupled plasma (CCP) method, a toroidal plasma method, a microwave (MW) method, etc.

[0032] The first remote plasma generator (150a) can activate the first process gas by forming a first plasma atmosphere inside, and the second remote plasma generator (150b) can activate the second process gas by forming a second plasma atmosphere inside. The first remote plasma generator (150a) and the second remote plasma generator (150b) can operate independently, and thus the first plasma atmosphere and the second plasma atmosphere can be generated independently.

[0033] In some embodiments, a mixer (145) may be interposed between the first remote plasma generator (150a) and the gas injection unit (120) and between the second remote plasma generator (150b) and the gas injection unit (120). For example, a first process gas activated in the first remote plasma generator (150a) and a second process gas activated in the second remote plasma generator (150b) may be introduced into the mixer (145), and the process gases mixed within the mixer (145) may be supplied onto a substrate (S) in the process chamber (110) through the gas injection unit (120). As another example, the first process gas and the second process gas activated in the mixer (145) are mixed and reacted to produce a third process gas, and this third process gas can be supplied onto a substrate (S) inside the process chamber (110) through the gas injection unit (120).

[0034] In some embodiments, where the activated first and second process gases do not need to be mixed and reacted in advance, the mixer (145) may be omitted and the first process gas activated in the first remote plasma generator (150a) and the second process gas activated in the second remote plasma generator (150b) may be supplied onto the substrate (S) in the process chamber (110) through the gas injection unit (120).

[0035] In some embodiments, a first process gas and a second process gas may be supplied to a first remote plasma generator (150a), and a second process gas may be supplied to a second remote plasma generator (150b). In this case, the first process gas and the second process gas may be activated in the first remote plasma generator (150a), and furthermore, at least partially, they may react to produce a third process gas.

[0036] In some embodiments, a first process gas may be supplied to a first remote plasma generator (150a), and the first process gas and the second process gas may be supplied to a second remote plasma generator (150b). In this case, the first process gas may be activated in the first remote plasma generator (150a), and the first process gas and the second process gas may be activated in the second remote plasma generator (150b), and furthermore, at least partially, they may react to produce a third process gas.

[0037] The substrate processing device (100) according to this embodiment can be used for various processing of the substrate (S). For example, the substrate processing device (100) can be used as an etching device or a pre-processing device for etching a thin film on the substrate (S).

[0038] Hereinafter, a substrate processing method according to embodiments of the present invention is described with reference to the substrate processing device (100).

[0039] FIG. 2 is a flowchart showing a substrate processing method according to one embodiment of the present invention.

[0040] Referring to FIGS. 1 and 2, a substrate (S) can be placed on a substrate support (130) (S10). For example, in this step (S10), the substrate (S) can be brought into a process chamber (110) and placed on the substrate support (130). In some embodiments, the substrate (S) includes a semiconductor wafer, and a part of a structure for forming a semiconductor device may be formed on the semiconductor wafer.

[0041] To process the substrate (S), a first process gas can first be supplied to a first remote plasma generator (150a) and a first plasma atmosphere can be formed to activate the first process gas (S20).

[0042] For example, a first RF power can be applied to a first remote plasma generator (150a) through a first plasma power supply (140a) to form a first plasma atmosphere in the first remote plasma generator (150a). Furthermore, a first process gas can be introduced into the first remote plasma generator (150a) through a first gas pipe (154a), and the first process gas can be activated in the first plasma atmosphere.

[0043] In a narrow sense, the first process gas activated in this step (S20) may contain radicals of the first process gas. Meanwhile, during plasma ignition in this step (S20), the first process gas may be decomposed to generate various types of gases and radicals. Therefore, in a broad sense, the first process gas activated in this step (S20) may further include various types of gases and radicals generated by the decomposition of the first process gas in addition to the radicals of the first process gas.

[0044] In addition, the second process gas can be supplied to the second remote plasma generator (150b) and the second plasma atmosphere can be formed to activate the second process gas (S25).

[0045] For example, a second RF power can be applied to a second remote plasma generator (150b) through a second plasma power supply (140b) to form a second plasma atmosphere in the second remote plasma generator (150b). Furthermore, a second process gas can be introduced into the second remote plasma generator (150b) through a second gas pipe (154b), and the second process gas can be activated in the second plasma atmosphere.

[0046] In a narrow sense, the second process gas activated in this step (S25) may contain radicals of the second process gas. Meanwhile, during plasma ignition in this step (S25), the second process gas may be decomposed to generate various types of gases and radicals. Therefore, in a broad sense, the second process gas activated in this step (S25) may further include various types of gases and radicals generated by the decomposition of the second process gas in addition to the radicals of the second process gas.

[0047] In the aforementioned steps (S20, S25), the first process gas and the second process gas may be different from each other, and the first plasma atmosphere and the second plasma atmosphere may be controlled independently according to the first process gas and the second process gas. Accordingly, the first RF power applied to the first remote plasma generator (150a) can be appropriately selected by considering the conditions required for the activation of the first process gas, and the second RF power applied to the second remote plasma generator (150b) can be appropriately selected by considering the conditions required for the activation of the second process gas.

[0048] In some embodiments, the order of steps (S20, S25) may be varied. For example, step (S25) may be performed first, followed by step (S20). As another example, steps (S20, S25) may be performed simultaneously.

[0049] Subsequently, at least one of the activated first process gas, the activated second process gas, and the third process gas generated by the reaction of the activated first process gas and the activated second process gas is supplied to the process chamber (110) through the gas injection unit (120) to process the substrate (S) placed on the substrate support (130) (S30). In this step (S30), the processing of the substrate (S) may include thin film etching on the substrate (S) or pretreatment of the substrate (S). Furthermore, depending on the processing of the substrate (S) in this step (S30), the activated first process gas and the activated second process gas may be supplied to the substrate (S) in various forms.

[0050] For example, at this step (S30), the activated first process gas and the activated second process gas may be mixed together in a mixer (145) and supplied onto the substrate (S). In some embodiments, the activated first process gas and the activated second process gas may react with each other in the mixer (145) to produce a third process gas, and this third process gas may be supplied onto the substrate (S) through a gas injection unit (120). Furthermore, the third process gas may be supplied periodically for a plurality of cycles.

[0051] As another example, at this step (S30), the activated first process gas and the activated second process gas may be supplied alternately onto the substrate (S) at least once.

[0052] Below, the step (S30) of processing the substrate is explained in more detail with an example.

[0053] FIG. 3 is a flowchart showing a step (S30a) of processing a substrate according to one example in a substrate processing method according to some embodiments.

[0054] Referring to FIGS. 1 and 3, the step of processing a substrate (S30a) may include the step of mixing and reacting an activated first process gas and an activated second process gas in a mixer (145) to generate a third process gas (S32), and the step of supplying the third process gas to a process chamber (110) to supply it onto a substrate (S) (S34). Furthermore, the step of processing a substrate (S30a) may further include the step of heating the substrate (S) after the step of supplying the third process gas to the substrate (S) (S34) (S36).

[0055] In some embodiments, the step of processing the substrate (S30a) may be performed by repeating a cycle including steps (S32, S34, S36) multiple times. For example, in the step of processing the substrate (S30a), an oxide film on the substrate (S) may be etched.

[0056] More specifically, the first process gas may contain NH3, and the second process gas may contain NF3. For example, the first remote plasma generator (150a) may activate NH3 gas in the first plasma atmosphere to generate NH3 radicals. Furthermore, the first remote plasma generator (150a) may partially decompose NH3 gas and generate NH or 2H gas and radicals during ignition of the first plasma atmosphere. Furthermore, the second remote plasma generator (150b) may activate NF3 gas in the second plasma atmosphere to generate NF3 radicals. Furthermore, the second remote plasma generator (150b) may partially decompose NF3 gas and generate NF or 2F gas and radicals during ignition of the second plasma atmosphere.

[0057] As described above, the gas and radical species generated in the first remote plasma generator (150a) and the second remote plasma generator (150b) can be reacted in the mixer (145). For example, the decomposition products of NF3 and NH3 generated during plasma ignition can react to produce HF gas and byproducts, and this HF gas can react with NH3 radicals to produce NH4F gas.

[0058] These NH4F and HF gases can surface-react with oxide films, such as silicon oxide films, to produce salt. Subsequently, when the substrate (S) is heated, these salts can decompose and volatilize into SiF4. Heating of the substrate (S) can be performed by various methods, such as irradiating with infrared rays. Therefore, by repeating the above steps (S32, S34, S36), the oxide film on the substrate (S) can be removed. For example, the natural oxide film on the substrate (S) can be removed in the step of processing the substrate (S30a). In this case, the substrate processing method can be used for removing the oxide film on the substrate (S) or for pre-processing the substrate (S).

[0059] In this substrate processing method, the first plasma and second plasma conditions for activating the first process gas, e.g., NH3 gas, and the second process gas, e.g., NF3 gas, may be different from each other and may be independently optimized by controlling the first remote plasma generator (150a) and the second remote plasma generator (150b) respectively. Furthermore, depending on the thin film to be processed, the ratio of the first process gas to the second process gas, e.g., the NH3 / NF3 ratio, or the processing temperature may be changed, and accordingly, the processing conditions of the first remote plasma generator (150a) and the second remote plasma generator (150b) may be independently changed.

[0060] Furthermore, as shown in FIG. 5a, it can be seen that when the NF3 flow rate increases above a certain value, the H peak on the OES decreases. From this, it is understood that under these conditions, RF power of 700W is sufficient for the activation of NH3, and the remaining power is used for the activation or dissociation of NF3. Also, as shown in FIG. 5b, in the case of polysilicon (Poly Si), the etched thickness increases as the NF3 flow rate increases, whereas in the case of ALD oxide film (ALD SiO2), the NF3 flow rate increases and then decreases again at a certain value, e.g., 10 sccm or higher. From the above results, it can be seen that the main species of etching may change when the NF3 flow rate is above a certain value, e.g., 10 sccm or higher.

[0061] Furthermore, experimental results for cases where the RF power was 350W and 500W confirmed that the etching amounts of polysilicon (poly Si) and silicon oxide (SiO2) were opposite under the two conditions. When the RF power was 350W, the etching of the silicon oxide (SiO2) was dominant, but when the RF power was 500W, the etching of polysilicon (poly Si) was dominant. Since the main species etching polysilicon is F and the main species etching silicon oxide is HF, it can be seen that it is necessary to set the RF power differently depending on the etching target. For example, when the processing target is a silicon oxide, the first RF power for activating NH3 gas may be greater than the second RF power for activating NF3 gas.

[0062] Meanwhile, in some modified examples of this embodiment, a first process gas (NH3 gas) and a second process gas (NF3 gas) may be supplied to a first remote plasma generator (150a), and a second process gas (NF3 gas) may be supplied to a second remote plasma generator (150b). Accordingly, the first process gas (NH3 gas) and the second process gas (NF3 gas) may be activated in the first remote plasma generator (150a), and furthermore, at least partially, they may react to generate a third process gas (NH4F gas). Thus, NH4F radicals may be generated in the first remote plasma generator (150a), and HF radicals may be generated in the second remote plasma generator (150b) and supplied to the process chamber (110).

[0063] In this case, NH4F radicals and HF radicals may be generated in the first remote plasma generator (150a), and additionally HF radicals may be generated in the second remote plasma generator (150b) and supplied to the process chamber (110). In this case, the thickness of the salt generated may be controlled by repeating the step of alternately supplying NH4F radicals and HF radicals onto the substrate (S), thereby controlling the etching thickness per cycle.

[0064] Meanwhile, in some modified examples of this embodiment, a first process gas (NH3 gas) may be supplied to a first remote plasma generator (150a), and the first process gas (NH3 gas) and the second process gas (NF3 gas) may be supplied together to a second remote plasma generator (150b). Accordingly, the first process gas (NH3 gas) may be activated in the first remote plasma generator (150a), and the first process gas (NH3 gas) and the second process gas (NF3 gas) may be activated in the second remote plasma generator (150b), and furthermore, at least partially, they may react to generate a third process gas (NH4F gas).

[0065] Accordingly, NH3 radicals may be generated in the first remote plasma generator (150a) and NH4F radicals may be generated in the second remote plasma generator (150b) and supplied to the process chamber (110). In this case, the ratio of H radicals can be controlled through the first remote plasma generator (150a), and the ratio of F radicals can be reduced. Accordingly, side effects caused by F radicals can be reduced by controlling the ratio of H radicals to F radicals.

[0066] Accordingly, according to the substrate processing methods described above, the first process gas and the second process gas can be independently activated in the first remote plasma generator (150a) and the second remote plasma generator (150b), which may be advantageous for setting optimal conditions compared to the case where the first process gas and the second process gas are activated under a single condition. For example, H radicals can be controlled for NH3 gas, and F radicals can be independently controlled for NF3 gas.

[0067] FIG. 4 is a flowchart showing the step (S30b) of processing a substrate according to another example in a substrate processing method according to some embodiments.

[0068] Referring to FIGS. 1 and FIGS. 4, the step of processing a substrate (S) (S30b) may include the step of supplying an activated first process gas onto the substrate (S) (S31) and the step of supplying an activated second process gas onto the substrate (S) (S33). In some embodiments, the step of processing a substrate (S) (S30b) may be performed by repeating a cycle including these steps (S31, S33) multiple times.

[0069] For example, the step (S30b) of processing the substrate (S) may be used for an atomic layer etching (ALE) or atomic layer removal (ALR) process. The first process gas may be used as a modification gas to modify the surface of the film to be processed on the substrate (S), and the second process gas may be used as an etching gas to remove the modified surface layer on the substrate (S). Optionally, a step of supplying a purge gas after each of the steps (S31, S33) may be added.

[0070] According to the substrate processing method of this embodiment, the first process gas and the second process gas can be activated under optimal conditions in the first remote plasma generator (150a) and the second remote plasma generator (150b), respectively, and supplied onto the substrate (S).

[0071] In the above-described substrate processing apparatus (100) and substrate processing methods using the same, the first process gas and the second process gas are activated in the first remote plasma generator (150a) and the second remote plasma generator (150b), respectively, but if activation of three or more process gases is required, three or more remote plasma generators may be used.

[0072] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0073] 100: Substrate processing device 110: Process chamber 120: Gas injection unit 130: Substrate support 140a, 140b: Plasma power supply 145: Mixer 150a, 150b: Remote plasma generator

Claims

Claim 1 A substrate processing method using a substrate processing apparatus comprising: a process chamber having a reaction space formed therein; a substrate support member coupled to the process chamber; a gas injection member coupled to the process chamber so as to face the substrate support member and for injecting process gases into the reaction space; a first remote plasma generator connected to the gas injection member and capable of forming a first plasma atmosphere; and a second remote plasma generator connected to the gas injection member and capable of forming a second plasma atmosphere different from the first plasma atmosphere, the method comprising: a step of placing a substrate on the substrate support member; a step of supplying a first process gas to the first remote plasma generator and forming the first plasma atmosphere to activate the first process gas; and a step of supplying a second process gas different from the first process gas to the second remote plasma generator and forming the second plasma atmosphere to activate the second process gas.A method for processing a substrate, comprising the step of processing the substrate by supplying at least one of the activated first process gas, the activated second process gas, and a third process gas generated by the reaction of the activated first process gas and the activated second process gas to the reaction space through the gas injection unit; wherein, in the step of processing the substrate, the third process gas is supplied periodically for a plurality of cycles; wherein, in the step of processing the substrate, each of the plurality of cycles includes the step of heating the substrate after supplying the third process gas to the substrate; wherein, in the step of processing the substrate, an oxide film on the substrate is etched; wherein the first process gas comprises NH3 and the second process gas comprises NF3; and wherein the first RF power supplied to the first remote plasma generator to form the first plasma atmosphere to activate NH3 is greater than the second RF power supplied to the second remote plasma generator to form the second plasma atmosphere to activate NF3. Claim 2 A substrate processing method according to claim 1, wherein the substrate processing device includes a mixer interposed between the first remote plasma generator and the gas injection unit and between the second remote plasma generator and the gas injection unit, and in the step of processing the substrate, the activated first process gas and the activated second process gas are mixed with each other before being supplied to the gas injection unit and supplied onto the substrate. Claim 3 A substrate processing method according to claim 2, wherein, in the step of processing the substrate, the activated first process gas and the activated second process gas react with each other in the mixer to generate the third process gas, and the third process gas is supplied onto the substrate through the gas injection unit. Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete

Images