Near-infrared absorber, near-infrared absorbing / blocking film and photoelectric device and organic sensor and electronic device

Abstract

The present invention provides a near-infrared absorbing material, a near-infrared absorbing / blocking film, a photoelectric element, an organic sensor, and an electronic device comprising a compound represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are as defined in the detailed description.

Description

Technology Field

[0001] The invention relates to a near-infrared (NIR) absorbing material, a near-infrared absorption / blocking film, a photoelectric device, an organic sensor, and an electronic device. Background Technology

[0002] Digital cameras and camcorders use an image sensor that captures images and stores them as electrical signals, and the image sensor includes a sensor that separates incident light according to wavelength and converts each component into an electrical signal.

[0003] Recently, optoelectronic devices in the near-infrared region are being researched to improve sensor sensitivity in low-light environments or to be used as biometric recognition devices. The problem to be solved

[0004] One embodiment provides a near-infrared absorbing material with excellent near-infrared absorption properties.

[0005] Another embodiment provides a film comprising the above-mentioned near-infrared absorbing material.

[0006] Another embodiment provides a photoelectric device comprising the above-mentioned near-infrared absorbing material.

[0007] Another embodiment provides an organic sensor comprising the near-infrared absorbing material or the photoelectric element.

[0008] Another embodiment provides an electronic device comprising the photoelectric element or the organic sensor. means of solving the problem

[0009] According to one embodiment, a near-infrared absorbing material comprising a compound represented by the following chemical formula 1 is provided.

[0010] [Chemical Formula 1]

[0011]

[0012] In the above chemical formula 1,

[0013] Ar 1is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof, and

[0014] Ar 2 is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof, and

[0015] X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c and R d Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof),

[0016] L 1 and L 2 Each is independently a substituted or unsubstituted C3 to C20 heteroarylene group or a fusion ring of a substituted or unsubstituted C6 to C20 arylene group and a substituted or unsubstituted C3 to C20 heteroarylene group, and

[0017] R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and

[0018] R 1 and R 2Each can exist independently or be connected to form a loop, and R 3 and R 4 They can exist independently or be connected to each other to form a ring.

[0019] In the above chemical formula 1, Ar 1 It may be benzene, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted tetracene or substituted or unsubstituted pyrene.

[0020] In the above chemical formula 1, Ar 1 It may be a substituted or unsubstituted quinoline, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted quinazoline, or a substituted or unsubstituted phenanthroline.

[0021] In the above chemical formula 1, Ar 1 It may be one of the moiety represented by the following chemical formula A-1.

[0022] [Chemical Formula A-1]

[0023]

[0024] In the above chemical formula A-1,

[0025] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a silyl group, or a C1 to C10 alkylsilyl group, and * inside the aromatic ring is NX of Formula 1. 1 It is a part that combines with the -N-containing pentagonal ring and the N-containing hexagonal ring, and the * of the left and right connectors is L of Chemical Formula 1. 1 and L 2 This is the part that connects to.

[0026] In the above chemical formula 1, Ar 1 It may be one of the moiety represented by the following chemical formula A-2.

[0027] [Chemical Formula A-2]

[0028]

[0029] In the above chemical formula A-2,

[0030] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a silyl group, or a C1 to C10 alkylsilyl group, and * inside the aromatic ring is NX of Formula 1. 1 It is a part that combines with the -N-containing pentagonal ring and the N-containing hexagonal ring, and the * of the left and right connectors is L of Chemical Formula 1. 1 and L 2 This is the part that connects to.

[0031] In the above chemical formula 1, Ar 2 It may be substituted or unsubstituted benzene, substituted or unsubstituted naphthalene, substituted or unsubstituted acenaphthene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted tetracene or substituted or unsubstituted pyrene.

[0032] In the above chemical formula 1, Ar 2 It may be a substituted or unsubstituted quinoline, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted quinazoline, a substituted or unsubstituted phenanthroline, a substituted or unsubstituted pyrimidine, or a substituted or unsubstituted benzodithiophene.

[0033] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-1.

[0034] [Chemical Formula B-1]

[0035]

[0036] In the above chemical formula B-1,

[0037] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is a portion that bonds to the N-containing hexagonal ring of Formula 1.

[0038] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-2.

[0039] [Chemical Formula B-2]

[0040]

[0041] In the above chemical formula B-2,

[0042] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is a portion that bonds to the N-containing hexagonal ring of Formula 1.

[0043] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b.

[0044] [Chemical Formula B-3a]

[0045]

[0046] In the above chemical formula B-3a,

[0047] Z 1 and Z 2 Each independently N or CR a and (here R ais hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0048] Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and

[0049] The * inside the aromatic ring is the part that bonds with the N-containing hexagonal ring of Chemical Formula 1.

[0050] [Chemical Formula B-3b]

[0051]

[0052] In the above chemical formula B-3b,

[0053] Ar 3 and Ar 4 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and

[0054] The * inside the aromatic ring is the part that bonds with the N-containing hexagonal ring of Chemical Formula 1.

[0055] The moiety represented by the above chemical formula B-3a can be represented by the following chemical formula B-3aa, and the moiety represented by the above chemical formula B-3b can be represented by the following chemical formula B-3bb.

[0056] [Chemical formula B-3aa]

[0057]

[0058] [Chemical Formula B-3bb]

[0059]

[0060] In the above chemical formulas B-3aa and B-3bb,

[0061] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and

[0062] The * inside the aromatic ring is the part that bonds to the N-containing hexagonal ring of Chemical Formula 1, and

[0063] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e - is selected from (here R a , R b , R c , R d and R e Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups).

[0064] In the above chemical formula 1, L 1 and L 2 It may be the same or different and may be selected from the following chemical formulas C-1 to C-4.

[0065]

[0066] In the above chemical formulas C-1 to C-4,

[0067] Y 1 and Y 2 are independently O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R cEach is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof),

[0068] R b and R c They each exist independently or combine with each other to form a ring,

[0069] * is the connection point with Chemical Formula 1.

[0070] In the above chemical formula 1, *-N(R 1 )(R 2 ) and *-N(R 3 )(R 4 Each of the following can be independently represented by the chemical formula D-1 or chemical formula D-2.

[0071] [Chemical Formula D-1]

[0072]

[0073] In the above chemical formula D-1,

[0074] Ar 5 and Ar 6 Each is independently selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group, and

[0075] * is the connection point with Chemical Formula 1, and

[0076] [Chemical Formula D-2]

[0077]

[0078] In the above chemical formula D-2,

[0079] Ar 7 and Ar 8 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and

[0080] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0081] * is the connection point with Chemical Formula 1.

[0082] The above chemical formula D-1 can be represented by the following chemical formula D-1a or chemical formula D-1b.

[0083] [Chemical Formula D-1a]

[0084]

[0085] In the above chemical formula D-1a,

[0086] Z 1 To Z 10 Each independently N or CR aand (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0087] Z 1 To Z 10 This CR a In the case of R a exists independently or Z 1 To Z 10 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0088] * is the connection point with Chemical Formula 1.

[0089] [Chemical Formula D-1b]

[0090]

[0091] In the above chemical formula D-1b,

[0092] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e Selected from (here R a , R b , R c , R d and R e Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups),

[0093] Z 1 To Z 6 Each independently N or CR x and (here R xis hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0094] Z 1 To Z 6 This CR a In the case of R a exists independently or Z 1 To Z 6 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0095] * is the connection point with Chemical Formula 1.

[0096] The above chemical formula D-2 can be represented by the following chemical formula D-2a, chemical formula D-2b, or chemical formula D-2c.

[0097] [Chemical Formula D-2a]

[0098]

[0099] In the above chemical formula D-2a,

[0100] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R iEach is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0101] Z 1 To Z 8 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0102] Z 1 To Z 8 This CR x In the case of R x exists independently or Z 1 To Z 8 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0103] * is the connection point with Chemical Formula 1.

[0104] [Chemical Formula D-2b]

[0105]

[0106] [Chemical Formula D-2c]

[0107]

[0108] In the above chemical formulas D-2b and D-2c,

[0109] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0110] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently p -, -SiR q R r - and -GeR s R t Selected from (here R p , R q , R r , R s and R tEach is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups),

[0111] Z 1 To Z 4 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0112] Z 1 To Z 4 This CR x In the case of R x exists independently or Z 1 To Z 4 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring.

[0113] The peak absorption wavelength of the above near-infrared absorbing material may fall within the wavelength range of about 750 nm to about 3000 nm.

[0114] According to another embodiment, a near-infrared absorption / blocking film comprising the near-infrared absorbing material is provided.

[0115] According to another embodiment, a photoelectric device is provided comprising a first electrode and a second electrode facing each other; and an active layer located between the first electrode and the second electrode, wherein the active layer comprises a near-infrared absorbing material comprising a compound represented by Formula 1.

[0116] According to another embodiment, a photoelectric device is provided comprising: a first electrode and a second electrode facing each other; an active layer located between the first electrode and the second electrode; and a charge auxiliary layer located between the first electrode and the active layer or between the second electrode and the active layer, wherein the charge auxiliary layer comprises a near-infrared absorbing material comprising a compound represented by Formula 1.

[0117] The above active layer may further include the above near-infrared absorbing material.

[0118] According to another embodiment, an organic sensor comprising the above-mentioned photoelectric element is provided.

[0119] According to another embodiment, an organic sensor is provided comprising: a semiconductor substrate; a first photoelectric element positioned on the semiconductor substrate and configured to selectively absorb light in a first near-infrared wavelength region; and an additional sensor configured to absorb light in a region different from the first near-infrared wavelength region, wherein the first photoelectric element comprises a near-infrared absorbing material comprising a compound represented by Chemical Formula 1.

[0120] The additional sensor is an infrared light sensor that is at least partially embedded in the semiconductor substrate, and the region different from the first near-infrared wavelength region is a near-infrared wavelength region different from the first near-infrared wavelength region, and the first photoelectric element and the infrared light sensor may be superimposed in a direction perpendicular to the upper surface of the semiconductor substrate.

[0121] The additional sensor described above includes a plurality of photodiodes at least partially embedded in the semiconductor substrate, the plurality of photodiodes are configured to selectively absorb light in the visible light region, and the first photoelectric element and the plurality of photodiodes may be superimposed in a direction perpendicular to the upper surface of the semiconductor substrate.

[0122] The organic sensor further includes an additional photoelectric element disposed on the semiconductor substrate, wherein the additional photoelectric element is located between the first photoelectric element and the semiconductor substrate, and the additional photoelectric element may be configured to selectively absorb light in a region other than the first near-infrared region and the visible light region.

[0123] The additional sensor described above includes at least one additional photoelectric element vertically stacked between the first photoelectric element and the semiconductor substrate, and each of the additional photoelectric elements may include a photoelectric conversion layer and be configured to selectively absorb light in a wavelength region different from the first near-infrared wavelength region.

[0124] The first photoelectric element comprises a first electrode and a second electrode facing each other; and an active layer located between the first electrode and the second electrode; and the active layer may include the near-infrared absorbing material.

[0125] The first photoelectric element comprises a first electrode and a second electrode facing each other; an active layer located between the first electrode and the second electrode; and a charge auxiliary layer located between the first electrode and the active layer or between the second electrode and the active layer; and the charge auxiliary layer may include the near-infrared absorbing material.

[0126] According to another embodiment, an electronic device comprising the photoelectric element or the organic sensor is provided. Effects of the invention

[0127] A near-infrared absorbing material exhibiting good absorption characteristics in the near-infrared region can be effectively used in photoelectric devices and / or organic sensors. Brief explanation of the drawing

[0128] FIG. 1 is a cross-sectional view showing a photoelectric element according to one embodiment, and FIG. 2 is a cross-sectional view showing a photoelectric element according to another embodiment, and FIG. 3 is a cross-sectional view showing an organic sensor according to one embodiment, and FIG. 4 is a cross-sectional view showing an organic sensor according to another embodiment, and FIG. 5 is a cross-sectional view showing an organic sensor according to another embodiment, and FIG. 6 is a schematic diagram showing an example of a pixel array of an organic sensor according to one embodiment, and FIG. 7 is a cross-sectional view of an organic sensor according to one embodiment, and FIG. 8 is a cross-sectional view of an organic sensor according to another embodiment, and FIG. 9 is a cross-sectional view of an organic sensor according to another embodiment, and FIG. 10 is a cross-sectional view of an organic sensor according to another embodiment, and FIG. 11 is a cross-sectional view of an organic sensor according to another embodiment, and FIG. 12 is a schematic diagram of an electronic device according to one embodiment, and FIG. 13 is a block diagram of a digital camera including an organic sensor according to one embodiment, and FIG. 14 is a graph showing the results of measuring the photoelectric conversion efficiency of photoelectric devices according to Example 1 and Comparative Example 2. Specific details for implementing the invention

[0129] The following embodiments are described in detail so that those skilled in the art can easily implement them. However, the structure actually applied may be implemented in various different forms and is not limited to the embodiments described herein.

[0130] The thickness was enlarged in the drawing to clearly represent various layers and regions.

[0131] When a part such as a layer, membrane, region, or plate is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between.

[0132] To clearly explain the embodiments shown in the drawings, parts unrelated to the description have been omitted, and the same reference numerals have been used for identical or similar components throughout the specification.

[0133] In the following, "combination" includes two or more mixtures, mutual substitutions, and two or more stacked structures.

[0134] Unless otherwise defined below, "substituted" means that a hydrogen atom in a compound is a halogen atom, a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or its salt, a sulfonic acid group or its salt, a phosphoric acid group or its salt, a silyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroaryl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, or a C6 to C15 It means substituted with a substituent selected from a cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof.

[0135] Unless otherwise defined below, "hetero" means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si and P.

[0136] Unless otherwise defined below, "aromatic ring" refers to a functional group in which all elements of the ring-shaped functional group have p-orbitals and these p-orbitals form a conjugation, and "heteroaromatic ring" refers to an aromatic ring containing heteroatoms. The "aromatic ring" refers to an arene group of C6 to C30, for example, an arene group of C6 to C20, or an aryl group of C6 to C30, for example, an aryl group of C6 to C20, and the "heteroaromatic ring" may be a heteroarene group of C3 to C30, for example, a heteroarene group of C3 to C20, or a heteroaryl group of C6 to C30, for example, a heteroaryl group of C6 to C20.

[0137] Unless otherwise defined in this specification, "arene group" refers to a hydrocarbon group having an aromatic ring, including single-ring and multi-ring hydrocarbon groups, wherein additional rings of the multi-ring hydrocarbon group may be aromatic rings or non-aromatic rings. "Heteroarene group" refers to an arene group containing 1 to 3 heteroatoms selected from N, O, S, Se, Te, P, and Si within the ring.

[0138] Unless otherwise defined in this specification, "aryl group" is a collective concept for a group having one or more hydrocarbon aromatic moietys, including a form in which all elements of the hydrocarbon aromatic moiety have p-orbitals and these p-orbitals form a conjugation, such as a phenyl group, a naphthyl group, etc., and a form in which two or more hydrocarbon aromatic moietys are connected through sigma bonds, such as a biphenyl group, a terphenyl group, a quarterphenyl group, etc., and a non-aromatic fused ring in which two or more hydrocarbon aromatic moietys are directly or indirectly fused, such as a fluorenyl group, etc. The aryl group may include monocyclic, polycyclic, or fused polycyclic (i.e., a ring sharing adjacent pairs of carbon atoms) functional groups.

[0139] Unless otherwise defined in this specification, "heteroaryl group" means containing at least one heteroatom selected from the group consisting of N, O, S, Se, Te, P, and Si instead of carbon (C) within the ring. When the heteroaryl group is a fused ring, at least one of the rings forming the heteroaryl group may have a heteroatom, and each ring may have a heteroatom.

[0140] Unless otherwise defined in this specification, "ring" means an aromatic ring, a non-aromatic ring, a heteroaromatic ring, a heteronon-aromatic ring, a fused ring thereof, and / or a combination thereof. The aromatic ring is as described above, and the non-aromatic ring may be a C3 to C30 cycloalkyl group, a C3 to C30 cycloalkenyl group, or a C3 to C30 cycloalkinyl group.

[0141] Unless otherwise defined in this specification, "halogen" may be any one of F, Cl, Br and I, and the haloalkyl group is one in which at least one hydrogen of the alkyl group is substituted with a halogen, and may be a perfluoroalkyl group such as -CF3, for example.

[0142] A near-infrared absorbing material according to one embodiment is described below.

[0143] The above near-infrared absorbing material includes a compound represented by the following chemical formula 1.

[0144] [Chemical Formula 1]

[0145]

[0146] In the above chemical formula 1,

[0147] Ar 1 is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof, and

[0148] Ar 2is a substituted or unsubstituted C6 to C30 aromatic ring, a substituted or unsubstituted C3 to C30 heteroaromatic ring, or a combination thereof, and

[0149] X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c and R d Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof),

[0150] L 1 and L 2 Each is independently a substituted or unsubstituted C3 to C20 heteroarylene group or a fusion ring of a substituted or unsubstituted C6 to C20 arylene group and a substituted or unsubstituted C3 to C20 heteroarylene group, and

[0151] R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and

[0152] R 1 and R 2 Each can exist independently or be connected to form a loop, and R 3 and R 4 They can exist independently or be connected to each other to form a ring.

[0153] Materials that absorb long-wavelength light, such as near-infrared light, preferably have a small HOMO-LUMO bandgap energy. While a long conjugate length can be used to achieve a small bandgap energy, an increased conjugate length presents a problem in that it is difficult to apply deposition processes. The near-infrared absorbing material represented by Chemical Formula 1 above comprises a core with a conjugate structure having electron acceptance characteristics (NX in Chemical Formula 1). 1 -Amine groups having electron-donating properties in -N-containing pentagonal rings and N-containing hexagonal rings (*-N(R 1 )(R 2 ) and *-N(R 3 )(R 4 )) is L 1 and L 2 By having a donor-acceptor-donor structure connected in such a way, it has strong charge transfer characteristics and a low bandgap energy, allowing it to effectively absorb light in the near-infrared wavelength region. In addition, it has excellent thermal stability, making it suitable for deposition processes. Therefore, a layer and / or structure containing the near-infrared absorbing material exhibits excellent sensitivity and absorption for light in the near-infrared wavelength region. A device configured to selectively absorb near-infrared light and convert it into an electrical signal (photoelectric conversion) can have improved performance and / or efficiency by including the near-infrared absorbing material, for example, in an active layer configured to selectively absorb near-infrared light and convert it into an electrical signal (photoelectric conversion).

[0154] In the above chemical formula 1, Ar 1 It may be benzene, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted tetracene or substituted or unsubstituted pyrene.

[0155] In the above chemical formula 1, Ar 1It may be a substituted or unsubstituted quinoline, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted quinazoline, or a substituted or unsubstituted phenanthroline.

[0156] In the above chemical formula 1, Ar 1 It may be one of the moiety represented by the following chemical formula A-1.

[0157] [Chemical Formula A-1]

[0158]

[0159] In the above chemical formula A-1,

[0160] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a silyl group, or a C1 to C10 alkylsilyl group, and * inside the aromatic ring is NX of Formula 1. 1 It is a part that combines with the -N-containing pentagonal ring and the N-containing hexagonal ring, and the * of the left and right connectors is L of Chemical Formula 1. 1 and L 2 This is the part that connects to.

[0161] In the above chemical formula 1, Ar 1 It may be one of the moiety represented by the following chemical formula A-2.

[0162] [Chemical Formula A-2]

[0163]

[0164] In the above chemical formula A-2,

[0165] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a silyl group, or a C1 to C10 alkylsilyl group, and * inside the aromatic ring is NX of Formula 1. 1 It is a part that combines with the -N-containing pentagonal ring and the N-containing hexagonal ring, and the * of the left and right connectors is L of Chemical Formula 1. 1 and L 2This is the part that connects to.

[0166] In the above chemical formula 1, Ar 2 It may be substituted or unsubstituted benzene, substituted or unsubstituted naphthalene, substituted or unsubstituted acenaphthene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted tetracene or substituted or unsubstituted pyrene.

[0167] In the above chemical formula 1, Ar 2 It may be a substituted or unsubstituted quinoline, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted quinazoline, a substituted or unsubstituted phenanthroline, a substituted or unsubstituted pyrimidine, or a substituted or unsubstituted benzodithiophene.

[0168] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-1.

[0169] [Chemical Formula B-1]

[0170]

[0171] In the above chemical formula B-1,

[0172] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is a portion that bonds to the N-containing hexagonal ring of Formula 1.

[0173] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-2.

[0174] [Chemical Formula B-2]

[0175]

[0176] In the above chemical formula B-2,

[0177] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is a portion that bonds to the N-containing hexagonal ring of Formula 1.

[0178] In the above chemical formula 1, Ar 2 It may be one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b.

[0179] [Chemical Formula B-3a]

[0180]

[0181] In the above chemical formula B-3a,

[0182] Z 1 and Z 2 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0183] Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and

[0184] The * inside the aromatic ring is the part that bonds with the N-containing hexagonal ring of Chemical Formula 1.

[0185] [Chemical Formula B-3b]

[0186]

[0187] In the above chemical formula B-3b,

[0188] Ar 3 and Ar4 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and

[0189] The * inside the aromatic ring is the part that bonds with the N-containing hexagonal ring of Chemical Formula 1.

[0190] The moiety represented by the above chemical formula B-3a can be represented by the following chemical formula B-3aa, and the moiety represented by the above chemical formula B-3b can be represented by the following chemical formula B-3bb.

[0191] [Chemical formula B-3aa]

[0192]

[0193] [Chemical Formula B-3bb]

[0194]

[0195] In the above chemical formulas B-3aa and B-3bb,

[0196] The hydrogen of each aromatic ring can be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and

[0197] The * inside the aromatic ring is the part that bonds to the N-containing hexagonal ring of Chemical Formula 1, and

[0198] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e Selected from (here R a , R b , R c , R d and R eEach is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups).

[0199] For example, in the above formulas B-3aa and B-3bb, the halogen may be any one of F, Cl, Br, and I, and the haloalkyl group is one in which at least one hydrogen of the alkyl group is substituted with a halogen, and may be a perfluoroalkyl group such as -CF3, for example.

[0200] In the above chemical formula 1, L 1 and L 2 It is a linker containing a heterocycle (e.g., a single ring or a fused ring) in which the heteroatoms included in the ring can enhance charge transfer characteristics and reduce the band gap energy.

[0201] The above L 1 and L 2 The formulas may be identical or different from each other and may be selected from the following formulas C-1 to C-4.

[0202]

[0203] In the above chemical formulas C-1 to C-4,

[0204] Y 1 and Y 2 are independently O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R c Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof),

[0205] R b and R cThey each exist independently or combine with each other to form a ring,

[0206] * is the connection point with Chemical Formula 1.

[0207] The above L 1 and L 2 is Ar 1 It may be connected to a symmetric position or an asymmetric position with respect to it.

[0208] In the above chemical formula 1, *-N(R 1 )(R 2 ) and *-N(R 3 )(R 4 Each of ) can be independently represented by the following D-1 or chemical formula D-2.

[0209] [Chemical Formula D-1]

[0210]

[0211] In the above chemical formula D-1,

[0212] Ar 5 and Ar 6 Each is independently selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group, and

[0213] * is the connection point with Chemical Formula 1, and

[0214] [Chemical Formula D-2]

[0215]

[0216] In the above chemical formula D-2,

[0217] Ar 7 and Ar 8 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and

[0218] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeRd R e -, -(CR f R g ) n - and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0219] * is the connection point with Chemical Formula 1.

[0220] The above chemical formula D-1 can be represented by the following chemical formula D-1a or chemical formula D-1b.

[0221] [Chemical Formula D-1a]

[0222]

[0223] In the above chemical formula D-1a,

[0224] Z 1 To Z 10 Each independently N or CR a and (here R ais hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0225] Z 1 To Z 10 This CR a In the case of R a exists independently or Z 1 To Z 10 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0226] * is the connection point with Chemical Formula 1.

[0227] According to one embodiment, Z in the above formula D-1a 1 To Z 5 At least one of and / or Z 6 To Z 10 At least one of them may be N. According to one embodiment, in the formula D-1a above, Z 1 To Z 5 At least two of Z 6 To Z 10 At least two of them can be N.

[0228] [Chemical Formula D-1b]

[0229]

[0230] In the above chemical formula D-1b,

[0231] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e Selected from (here R a , R b , R c , Rd and R e Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups),

[0232] Z 1 To Z 6 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0233] Z 1 To Z 6 This CR x In the case of R x exists independently or Z 1 To Z 6 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0234] * is the connection point with Chemical Formula 1.

[0235] According to one embodiment, Z in the above formula D-1b 1 To Z 3 At least one of and / or Z 4 To Z 6 At least one of them may be N. According to one embodiment, in the above formula D-1b, Z 1 To Z 3 At least two of Z 4 To Z 6 At least two of them can be N.

[0236] The above chemical formula D-2 can be represented by the following chemical formula D-2a, chemical formula D-2b, or chemical formula D-2c.

[0237] [Chemical Formula D-2a]

[0238]

[0239] In the above chemical formula D-2a,

[0240] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0241] Z 1 To Z 8 Each independently N or CR x and (here R xis hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0242] Z 1 To Z 8 This CR x In the case of R x exists independently or Z 1 To Z 8 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring, and

[0243] * is the connection point with Chemical Formula 1.

[0244] According to one embodiment, Z in the above formula D-2a 1 To Z 4 At least one of and / or Z 5 To Z 8 At least one of them may be N. According to one embodiment, in the above formula D-2a, Z 1 To Z 4 At least two of Z 5 To Z 8 At least two of them can be N.

[0245] [Chemical Formula D-2b]

[0246]

[0247] [Chemical Formula D-2c]

[0248]

[0249] In the above chemical formulas D-2b and D-2c,

[0250] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CRf R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0251] X a and X b -O-, -S-, -Se-, -Te-, -NR each independently p -, -SiR q R r - and -GeR s R t Selected from (here R p , R q , R r , R s and R t Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups),

[0252] Z 1 To Z 4 Each independently N or CR x and (here Rx is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof),

[0253] Z 1 To Z 4 This CR x In the case of R x exists independently or Z 1 To Z 4 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring.

[0254] According to one embodiment, Z in the above formula D-2b 1 and Z 2 At least one of and / or Z 3 Wow Z 4 At least one of them may be N. According to one embodiment, in the above formula D-2b, Z 1 and Z 2 and / or Z 3 Wow Z 4 can be N.

[0255] According to one embodiment, Z in the above formula D-2c 1 and Z 2 At least one of and / or Z 3 Wow Z 4 At least one of them may be N. According to one embodiment, in the formula D-2c, Z 1 and Z 2 and / or Z 3 Wow Z 4 can be N.

[0256] The above chemical formula D-1 can be expressed as any one of the following chemical formulas D-1-1 to D-1-12.

[0257]

[0258] In the above chemical formulas D-1-1 to D-1-12,

[0259] a and b are each independently integers from 1 to 5, and

[0260] c and d are each independently integers from 1 to 4, and

[0261] e is an integer from 1 to 3, and

[0262] R 3a to R 3e Each is independently selected from hydrogen, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C3 to C30 heteroaryl groups, halogens, cyano groups (-CN), cyano-containing groups, and combinations thereof, or optionally, if a, b, c, d, and e are two or more, a plurality of R 3a Among them, 2 or more adjacent Rs 3b Among them, 2 or more adjacent Rs 3c Among them, 2 or more adjacent Rs 3d Among them, two or more adjacent Rs 3e Two adjacent ones can be connected to form a pentagonal aromatic ring or a hexagonal aromatic ring.

[0263] The above chemical formula D-2 can be expressed as any one of the following chemical formulas D-2-1 to D-2-12.

[0264]

[0265] In the above chemical formulas D-2-1 to D-2-12,

[0266] a and b are each independently integers from 1 to 4, and

[0267] c and d are each independently integers from 1 to 3, and

[0268] e is an integer of 1 or 2, and

[0269] G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2),

[0270] R 3a to R 3e Each is independently selected from hydrogen, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C3 to C30 heteroaryl groups, halogens, cyano groups (-CN), cyano-containing groups, and combinations thereof, or optionally, if a, b, c, d, and e are two or more, a plurality of R 3a Among them, 2 or more adjacent Rs 3b Among them, 2 or more adjacent Rs 3cAmong them, 2 or more adjacent Rs 3d Among them, two or more adjacent Rs 3e Two adjacent ones can be connected to form a pentagonal aromatic ring or a hexagonal aromatic ring.

[0271] The above near-infrared absorbing material can absorb light in the near-infrared wavelength region, and the peak absorption wavelength of the above near-infrared absorbing material max ) may be, for example, about 750 nm or more, for example, about 780 nm or more, for example, about 790 nm or more, for example, about 800 nm or more, for example, about 810 nm or more, for example, about 820 nm or more, or about 830 nm or more. The peak absorption wavelength of the near-infrared absorbing material may be, for example, in the wavelength range of about 700 nm to 3000 nm, and within the above range, may be, for example, about 750 nm to 2500 nm, for example, about 780 nm to 2200 nm, for example, about 790 nm to 2100 nm, for example, about 800 nm to 2000 nm, for example, about 810 nm to 2000 nm, for example, about 820 nm to 2000 nm, or for example, about 830 nm to 2000 nm.

[0272] The above near-infrared absorbing material can exhibit good charge transfer characteristics, and accordingly, it has good photoelectric conversion characteristics that absorb light (e.g., selectively absorb) and convert it into an electrical signal (e.g., photoelectric conversion), so it can be effectively used as a photoelectric conversion material for a photoelectric device. Accordingly, a photoelectric device that includes the above near-infrared absorbing material in the active layer (e.g., the active layer (30) of FIGS. 1 and 2) and / or the charge auxiliary layer (e.g., the charge auxiliary layer (40, 45) of FIGS. 2) of a photoelectric device can exhibit improved performance and / or efficiency, such as improved photoelectric conversion performance and / or efficiency of near-infrared incident light, by including the above near-infrared absorbing material.

[0273] The above-mentioned near-infrared absorbing material has good heat resistance, which can prevent or reduce thermal decomposition during deposition, allowing for repeated deposition. The above-mentioned near-infrared absorbing material can be deposited by thermal deposition or vacuum deposition, for example, by sublimation. For example, deposition by sublimation can be confirmed by thermogravimetric analysis (TGA), and when subjected to thermogravimetric analysis at a pressure of about 10 Pa or less, for example, the temperature at which a weight loss of 10% relative to the initial weight occurs is about 400 Below, for example, about 390 Below, approximately 380 Below, approximately 370 Below, approximately 360 Less than or about 350 It may be less than or equal to. For example, when performing thermogravimetric analysis of the above near-infrared absorbing material at a pressure of about 10 Pa or less, the temperature at which, for example, a weight loss of 10% relative to the initial weight occurs is about 230 to 400 It could be.

[0274] Another embodiment provides a near-infrared absorption / blocking film comprising the above-mentioned near-infrared absorbing material.

[0275] The above near-infrared absorption / blocking film can be applied to various fields requiring absorption characteristics in the near-infrared wavelength range.

[0276] The above near-infrared absorbing material possesses both light absorption and photoelectric properties in the near-infrared wavelength region, so it can be effectively used as a photoelectric conversion material.

[0277] FIG. 1 is a cross-sectional view showing a photoelectric element according to one embodiment.

[0278] Referring to FIG. 1, a photoelectric element (100) according to one embodiment includes a first electrode (10) and a second electrode (20) facing each other, and an active layer (30) located between the first electrode (10) and the second electrode (20).

[0279] A substrate (not shown) may be placed on the side of the first electrode (10) or on the side of the second electrode (20). The substrate may be made of an inorganic material such as glass, an organic material such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or a combination thereof, or a silicon wafer, etc. The substrate may be omitted.

[0280] One of the first electrode (10) and the second electrode (20) is an anode and the other is a cathode. For example, the first electrode (10) may be an anode and the second electrode (20) may be a cathode.

[0281] At least one of the first electrode (10) and the second electrode (20) may be a light-transmitting electrode, and the light-transmitting electrode may be made of a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO), or a thin single-layer or multi-layer metal film. If one of the first electrode (10) and the second electrode (20) is an opaque electrode, it may be made of an opaque conductor such as aluminum (Al), silver (Ag), or gold (Au). In one example, both the first electrode (10) and the second electrode (20) may be light-transmitting electrodes. In one example, the second electrode (20) may be a light-receiving electrode located on the side receiving light.

[0282] The active layer is a layer in which a p-type semiconductor and an n-type semiconductor form a pn junction, and can generate excitons by receiving light from the outside (e.g., outside the active layer (30)) and then separate the generated excitons into holes and electrons.

[0283] The p-type semiconductor and the n-type semiconductor may each be light-absorbing materials that absorb light in at least some wavelength range, and the near-infrared absorbing material may be used as a p-type semiconductor or an n-type semiconductor. For example, the near-infrared absorbing material may be used as a p-type semiconductor and may include a fullerene or a fullerene derivative as an n-type semiconductor. Accordingly, the active layer (30) may include the aforementioned near-infrared absorbing material (for example, may include the near-infrared absorbing material and a fullerene or a fullerene derivative). The active layer (30) and the photoelectric device (100) have improved near-infrared light absorption characteristics (e.g., improved sensitivity, absorbance, etc. for light in the near-infrared wavelength range), and may exhibit improved photoelectric conversion performance and / or efficiency by including the near-infrared absorbing material. In one embodiment, the active layer (30) may include a near-infrared absorption / blocking film that includes the near-infrared absorbing material.

[0284] The active layer (30) may include an intrinsic layer in which the aforementioned near-infrared absorbing material (p-type semiconductor) and fullerene or a fullerene derivative (n-type semiconductor) are co-deposited, wherein the p-type semiconductor and the n-type semiconductor may be included in a volume ratio of about 1:9 to 9:1, for example, in a volume ratio of about 2:8 to 8:2 within the above range, for example, in a volume ratio of about 3:7 to 7:3 within the above range, for example, in a volume ratio of about 4:6 to 6:4 within the above range, and for example, in a volume ratio of about 5:5 within the above range.

[0285] The active layer (30) may further include a p-type layer and / or an n-type layer in addition to the intrinsic layer. The p-type layer may include the aforementioned p-type semiconductor, and the n-type layer may include the aforementioned n-type semiconductor. For example, it may be included in various combinations such as a p-type layer / I-layer, an I-layer / n-type layer, a p-type layer / I-layer / n-type layer, etc.

[0286] The above photoelectric element (100) may further include an auxiliary layer (not shown) located between the first electrode (10) and the active layer (30) and / or between the second electrode (20) and the active layer (30). The auxiliary layer may be a charge auxiliary layer or an optical auxiliary layer. Such a photoelectric element is illustrated in FIG. 2.

[0287] FIG. 2 is a cross-sectional view showing a photoelectric element according to another embodiment. Referring to FIG. 2, the photoelectric element (200) includes a first electrode (10) and a second electrode (20) facing each other, an active layer (30) located between the first electrode (10) and the second electrode (20), a first auxiliary layer (40) disposed between the first electrode (10) and the active layer (30), and a second auxiliary layer (45) located between the second electrode (20) and the active layer (30). In one embodiment, only one of the first auxiliary layer (40) and the second auxiliary layer (45) may be included in the photoelectric element (200).

[0288] The first auxiliary layer (40) and the second auxiliary layer (45) are charge auxiliary layers that facilitate the movement of holes and electrons separated from the active layer (30), thereby increasing the efficiency of the photoelectric device (200).

[0289] The charge assist layer (40 and / or 45) may include at least one selected from a hole injecting layer (HIL) that facilitates the injection of holes, a hole transporting layer (HTL) that facilitates the transport of holes, an electron blocking layer (EBL) that blocks the movement of electrons, an electron injecting layer (EIL) that facilitates the injection of electrons, an electron transporting layer (ETL) that facilitates the transport of electrons, and a hole blocking layer (HBL) that blocks the movement of holes.

[0290] The charge auxiliary layer (40 and / or 45) may include, for example, an organic material, an inorganic material, or an organic-inorganic material. The organic material may be an organic compound having hole or electronic properties, and the inorganic material may be a metal oxide such as molybdenum oxide, tungsten oxide, or nickel oxide. The charge auxiliary layer (40 and / or 45) may include, for example, the aforementioned near-infrared absorbing material. In one embodiment, the charge auxiliary layer (40 and / or 45) may include the near-infrared absorbing material, and the active layer (30) may also include the near-infrared absorbing material. In one embodiment, the charge auxiliary layer (40 and / or 45) may include the near-infrared absorbing material, and the active layer (30) may not include the near-infrared absorbing material. The charge auxiliary layer (40 and / or 45) and the photoelectric element (200) have improved near-infrared light absorption characteristics (e.g., improved sensitivity, absorption, etc. for light in the near-infrared wavelength region), and by including the near-infrared absorbing material, they may exhibit improved photoelectric conversion performance and / or efficiency and / or thermal stability. The optical auxiliary layer may be located in the direction of light incidence of the photoelectric element, and may be located on top of the photoelectric conversion layer (30), for example, when the second electrode (20) is the light receiving electrode. For example, the optical auxiliary layer may be located between the second electrode (20) and the photoelectric conversion layer (30).

[0291] The photoelectric element (100, 200) may further include an anti-reflection layer (47) on one side of the first electrode (10) or the second electrode (20). The anti-reflection layer (47) is positioned on the side where light is incident to further improve light absorption by lowering the reflectivity of the incident light. For example, when light is incident on the first electrode (10), the anti-reflection layer (47) may be located on one side of the first electrode (10), and when light is incident on the second electrode (20), the anti-reflection layer (47) may be located on one side of the second electrode (20).

[0292] The anti-reflection layer (47) may include a material having a refractive index of, for example, about 1.6 to 2.5, and may include at least one of a metal oxide, a metal sulfide, and an organic material having a refractive index in the above range. The anti-reflection layer (47) may include, for example, a metal oxide such as an aluminum-containing oxide, a molybdenum-containing oxide, a tungsten-containing oxide, a vanadium-containing oxide, a rhenium-containing oxide, a niobium-containing oxide, a tantalum-containing oxide, a titanium-containing oxide, a nickel-containing oxide, a copper-containing oxide, a cobalt-containing oxide, a manganese-containing oxide, a chromium-containing oxide, a tellurium-containing oxide, or a combination thereof; a metal sulfide such as zinc sulfide; or an organic material such as an amine derivative, but is not limited thereto.

[0293] In the photoelectric element (100, 200), light is incident on the active layer (30) from the first electrode (10) or the second electrode (20), and when the active layer (30) absorbs light in a predetermined wavelength range, excitons can be generated internally. The excitons are separated into holes and electrons in the active layer (30), and the separated holes move to the anode side, which is one of the first electrode (10) and the second electrode (20), and the separated electrons move to the cathode side, which is the other of the first electrode (10) and the second electrode (20), so that current can flow.

[0294] The photoelectric device (100, 200) can be applied to solar cells, image sensors, photodetectors, light sensors and organic light-emitting diodes, etc., but is not limited thereto.

[0295] The photoelectric element (100, 200) can be applied to, for example, an organic sensor. The organic sensor may be an organic CMOS sensor, for example, an organic CMOS infrared light sensor or an organic CMOS image sensor.

[0296] In one embodiment, the photoelectric element (100) may include the aforementioned near-infrared absorbing material in at least one of the first electrode (10) or the second electrode (20) together with or in place of the active layer (30). In one embodiment, the photoelectric element (200) may include the aforementioned near-infrared absorbing material in at least one of the first electrode (10) or the second electrode (20) together with or in place of at least one of the active layer (30) and / or charge auxiliary layers (40, 45).

[0297] FIG. 3 is a cross-sectional view showing an organic sensor according to one embodiment.

[0298] An organic sensor (300) according to one embodiment includes a semiconductor substrate (110), an insulating layer (80), and a photoelectric element (100).

[0299] The semiconductor substrate (110) may be a silicon substrate and has a transfer transistor (not shown) and a charge storage (55) integrated therein. The charge storage (55) may be integrated for each pixel. The charge storage (55) is electrically connected to the photoelectric element (100) described later, and information from the charge storage (55) can be transmitted by the transfer transistor.

[0300] Metal wiring (not shown) and pads (not shown) are also formed on the semiconductor substrate (110). The metal wiring and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof, to reduce signal delay, but are not limited thereto. However, the structure is not limited to the above, and the metal wiring and pads may be located on the lower part of the semiconductor substrate (110).

[0301] An insulating layer (80) is formed over the metal wiring and pads. The insulating layer (80) may be made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The insulating layer (60) has a trench (85) that exposes a charge storage (55). The trench may be filled with a filler.

[0302] The aforementioned photoelectric element (100) is formed on the insulating layer (80). As described above, the photoelectric element (100) includes a first electrode (10), an active layer (30), and a second electrode (20). In the drawing, a structure in which the first electrode (10), the active layer (30), and the second electrode (20) are stacked in order is illustrated as an example, but it is not limited thereto and may be arranged in the order of the second electrode (20), the active layer (30), and the first electrode (10).

[0303] The first electrode (10) and the second electrode (20) may both be transparent electrodes, and the active layer (30) is the same as the active layer described with reference to FIGS. 1 and FIG. 2. The active layer (30) can selectively absorb light in the near-infrared wavelength region. Light incident from the side of the second electrode (20) can be converted into photoelectric by mainly absorbing light in the near-infrared wavelength region at the active layer (30). As described above with reference to FIG. 1, the active layer (30) may have improved sensitivity to near-infrared light by including the aforementioned near-infrared absorbing material, thereby increasing the performance and / or efficiency (e.g., photoelectric conversion performance and / or efficiency) of the organic sensor (300) in absorbing incident near-infrared light and converting it into an electrical signal.

[0304] A condensing lens (not shown) may be further formed on the photoelectric element (100). The condensing lens can control the direction of incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0305] FIG. 3 illustrates an organic sensor to which the photoelectric element (100) of FIG. 1 is applied, but the photoelectric element (200) according to FIG. 2 can also be applied in the same way (for example, the photoelectric element (200) may be included to replace the photoelectric element (100) in the organic sensor (300).

[0306] The organic sensor according to the present embodiment may be an organic infrared light sensor, for example, an iris sensor or a depth sensor.

[0307] An iris sensor is a sensor that identifies personal identity by utilizing the unique characteristics of each person's iris. It can perform iris recognition by capturing the user's eye through the sensor at an appropriate distance, processing the captured image, and comparing it with a pre-stored image.

[0308] A depth sensor is a sensor that identifies the shape or location of an object from information about a three-dimensional object. It can capture an object through the sensor within an appropriate distance from the user and process the captured image to determine the shape or location of the object. Such a depth sensor can be used, for example, as a face recognition sensor.

[0309] FIG. 4 is a cross-sectional view showing an organic sensor according to another embodiment.

[0310] The organic sensor according to the present embodiment may include a plurality of sensors with different functions. For example, at least one of the plurality of sensors with different functions may be a biometric sensor, and the biometric sensor may be, for instance, an iris sensor, a distance sensor, a fingerprint sensor, a blood vessel distribution sensor, etc., but is not limited thereto. For example, one of the plurality of sensors with different functions may be an iris sensor and the other may be a distance sensor.

[0311] For example, a plurality of sensors may include a first infrared light sensor that detects light in an infrared region having a first wavelength (λ1) within an infrared wavelength region (e.g., selectively absorbing the light or converting it into an electrical signal (photoelectric)) and a second infrared light sensor that detects infrared light having a second wavelength (λ2) within an infrared wavelength region (identical to or different from the infrared wavelength region containing the first wavelength (λ1)) (e.g., selectively absorbing the light or converting it into an electrical signal (photoelectric)).

[0312] The first wavelength (λ1) and the second wavelength (λ2) may differ from each other, for example, within a wavelength range of about 700 nm to 3000 nm, and for example, the difference between the first wavelength (λ1) and the second wavelength (λ2) may be about 30 nm or more, about 50 nm or more within the above range, about 70 nm or more, about 80 nm or more, and about 90 nm or more.

[0313] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 780 nm to 900 nm, and the other of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 830 nm to 1000 nm.

[0314] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 780 nm to 840 nm, and the other of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 910 nm to 970 nm.

[0315] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 800 nm to 830 nm, and the other of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 930 nm to 950 nm.

[0316] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 805 nm to 815 nm, and the other of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 935 nm to 945 nm.

[0317] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be about 810 nm, and the first wavelength ( 1) and the other of the second wavelength (λ2) can be about 940 nm.

[0318] The organic sensor (400) according to the present embodiment includes a semiconductor substrate (110) in which a dual bandpass filter (95), a first infrared light sensor (100A), an insulating layer (80), and a second infrared light sensor (120) are integrated. The second infrared light sensor (120) is partially embedded in the semiconductor substrate (100). As shown in FIG. 4, the first infrared light sensor (100A) and the second infrared light sensor (120) are stacked and, for example, overlapped in a direction perpendicular to the upper surface (110S) of the semiconductor substrate (100).

[0319] As illustrated in FIG. 4, a dual bandpass filter (95) may be positioned on the front side of the organic sensor (400) and may selectively transmit infrared light including a first wavelength (λ1) and infrared light including a second wavelength (λ2) (e.g., light in the infrared wavelength region) and block and / or absorb other light. Here, other light may also include light in the ultraviolet and visible light regions.

[0320] The first infrared light sensor (100A) includes a first electrode (10), an active layer (30), and a second electrode (20). The first infrared light sensor (100A) may be identical to the photoelectric element (100) of the embodiment described above with reference to FIG. 1. However, in one embodiment, the first infrared light sensor (100A) may be identical to the photoelectric element (200) shown in FIG. 2.

[0321] As illustrated in FIG. 4, the second infrared light sensor (120) may be integrated within a semiconductor substrate (110) and may be a light sensing element. The semiconductor substrate (110) may be, for example, a silicon substrate, and the second infrared light sensor (120), a charge storage (55), and a transfer transistor (not shown) are integrated therein.

[0322] The second infrared light sensor (120) may be a photodiode (e.g., a silicon-based photodiode) that detects (e.g., absorbs) incoming light, and the detected information may be transmitted by a transmission transistor. Here, the light introduced into the second infrared light sensor (120) is light that has passed through a dual bandpass filter (95) and a first infrared light sensor (100A), and may be infrared light of a predetermined region including a second wavelength (λ2). Infrared light of a predetermined region including a first wavelength (λ1) may be completely absorbed by the active layer (30) of the first infrared light sensor and may not reach the second infrared light sensor (120). In this case, a separate filter is not required for wavelength selectivity of the light introduced into the second infrared light sensor (120). However, in case the infrared light of a predetermined region including the first wavelength (λ1) is not fully absorbed by the active layer (30), a filter may be additionally provided between the first infrared light sensor (100A) and the second infrared light sensor (120).

[0323] Accordingly, in the organic sensor (400), the first infrared light sensor (100A) may include a photoelectric element (e.g., photoelectric element (100 and / or 200)) configured to detect (e.g., selectively absorb and / or convert (into an electrical signal) light of a first near-infrared wavelength region (e.g., a first near-infrared wavelength region including a first wavelength (λ1)) among the incident light, and the second infrared light sensor (120) may be an additional sensor configured to detect (e.g., selectively absorb and / or convert (into an electrical signal) light of a second near-infrared wavelength region including a second wavelength (λ2) different from the first near-infrared wavelength region and not including the first wavelength (λ1) among the incident light.

[0324] The organic sensor according to the present embodiment can perform the function of a composite sensor by including two infrared light sensors that perform separate functions, and can also significantly improve sensitivity by doubling the number of pixels capable of performing the function of each sensor while maintaining the same size by stacking two sensors that perform separate functions in each pixel.

[0325] As described above with reference to FIG. 1, some of the active layer (30) or the photoelectric element (100 and / or 200) may include the aforementioned near-infrared absorbing material to increase the sensitivity and / or absorption of near-infrared light, thereby increasing the performance and / or efficiency (e.g., photoelectric conversion performance and / or efficiency) of the organic sensor (400) in absorbing incident near-infrared light and converting it into an electrical signal. In one embodiment, the second infrared light sensor (120) may include the aforementioned near-infrared absorbing material to increase the performance and / or efficiency (e.g., photoelectric conversion performance and / or efficiency) of the organic sensor (400) in absorbing incident near-infrared light and converting it into an electrical signal.

[0326] FIG. 5 is a cross-sectional view showing an organic sensor according to another embodiment.

[0327] The organic sensor according to the present embodiment may be an organic CMOS image sensor.

[0328] Referring to FIG. 5, an organic sensor (500) according to one embodiment includes a semiconductor substrate (110) on which a light sensing element (e.g., a photodiode such as a silicon-based photodiode, 50a, 50b, 50c), a transfer transistor (not shown), and a charge storage (55) are integrated, a lower insulating layer (60), a color filter layer (70a, 70b, 70c), an upper insulating layer (80), and a photoelectric element (100).

[0329] A semiconductor substrate (110) has integrated light-sensing elements (50a, 50b, 50c), a transfer transistor (not shown), and a charge storage (55). The light-sensing elements (50a, 50b, 50c) are at least partially embedded in the semiconductor substrate (110) and overlap with the photoelectric element (100) in a direction perpendicular to the upper surface (110S). The light-sensing elements (50a, 50b, 50c) may be photodiodes configured to detect light in different visible light regions (optionally absorb and / or convert (into an electrical signal)).

[0330] The light sensing element (50a, 50b, 50c), the transmission transistor and / or the charge storage (55) may be integrated in each pixel, for example, the light sensing element (50a) may be included in the red pixel, the light sensing element (50b) may be included in the green pixel, and the light sensing element (50c) may be included in the blue pixel.

[0331] The light sensing elements (50a, 50b, 50c) detect light (optionally absorb and / or convert it (into an electrical signal)) and the detected information can be transmitted by a transmission transistor, and the charge storage (55) is electrically connected to the photoelectric element (100) and the information of the charge storage (55) can be transmitted by the transmission transistor.

[0332] Metal wiring (not shown) and pads (not shown) are also formed on the semiconductor substrate (110). The metal wiring and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof, to reduce signal delay, but are not limited thereto. However, the structure is not limited to the above, and the metal wiring and pads may be located on the lower part of the light sensing element (50a, 50b).

[0333] A lower insulating layer (60) is formed over the metal wiring and pad. The lower insulating layer (60) may include a material having the same or different composition as the insulating layer (80).

[0334] Color filters (70a, 70b, 70c) are formed on the lower insulating film (60). The color filters (70a, 70b, 70c) include a red filter (70a) formed on a red pixel, a green filter (70b) formed on a green pixel, and a blue filter (70c) formed on a blue pixel.

[0335] An insulating layer (80, which may be an upper insulating layer) is formed on the color filters (70a, 70b, 70c). The insulating layer (80) can remove the step difference caused by the color filters (70a, 70b, 70c) and flatten it.

[0336] The aforementioned photoelectric element (100) is formed on the upper insulating layer (80). As described above, the photoelectric element (100) includes a first electrode (10), an active layer (30), and a second electrode (20). Although the drawing exemplarily illustrates a structure in which the first electrode (10), the active layer (30), and the second electrode (20) are stacked in sequence, it is not limited thereto and may be arranged in the order of the second electrode (20), the active layer (30), and the first electrode (10).

[0337] The first electrode (10) and the second electrode (20) may both be transparent electrodes, and the active layer (30) is as described above. The active layer (30) may selectively absorb light in the near-infrared wavelength region and / or convert it (into an electrical signal). As described above with respect to the photoelectric element (100, 200), a part of the photoelectric element (100) (e.g., the first electrode (10), the second electrode (20) and / or the active layer (30)) may include the aforementioned near-infrared absorbing material.

[0338] Light incident from the second electrode (20) can be converted into photoelectric light by mainly absorbing light in the near-infrared wavelength region in the active layer (30). Light in the remaining wavelength region can pass through the first electrode (10) and color filters (70a, 70b, 70c), and light in the red wavelength region that passes through the color filter (70a) can be detected by a light detection element (50a), light in the green wavelength region that passes through the color filter (70b) can be detected by a light detection element (50b), and light in the blue wavelength region that passes through the color filter (70c) can be detected by a light detection element (50c).

[0339] As described above with reference to FIG. 1, the active layer (30) may include the aforementioned near-infrared absorbing material, and accordingly, the sensitivity to near-infrared light is improved, and thus the performance and / or efficiency (e.g., photoelectric conversion performance and / or efficiency) of absorbing near-infrared incident light of the organic sensor (500) and / or converting it into an electrical signal may be improved.

[0340] Accordingly, when an organic sensor comprises a photoelectric element including a near-infrared absorbing material and is configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in a first near-infrared wavelength region, the organic sensor may include an additional sensor comprising a plurality of photodiodes (e.g., light sensing elements (50a, 50b, 50c)) that are at least partially embedded within a semiconductor substrate and configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal). The plurality of photodiodes may selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in different visible wavelength regions (e.g., red, blue, and / or green light).

[0341] FIG. 6 is a schematic diagram showing an example of a pixel array of an organic sensor according to one embodiment.

[0342] Referring to FIG. 6, an organic sensor (600) according to one embodiment includes a plurality of pixels (PX), and the plurality of pixels (PX) may have a matrix array arranged repeatedly along rows and columns. The plurality of pixels (PX) may form a unit pixel group (A) of a 2x2 array of pixels, for example as shown in FIG. 1 ("at least partially included"). However, the arrangement of pixels is not limited thereto and can be varied in various ways, and the unit pixel group (A) can be varied in various ways to include other pixel arrays such as a 3x3 array, a 4x4 array, etc., in addition to the 2x2 array.

[0343] At least some of the pixels may include multiple sensors having different functions within a single pixel, and multiple sensors may be stacked.

[0344] In one embodiment, each pixel (PX) may include two or more organic sensors configured to detect (e.g., absorb) light of different wavelength regions ("wavelength spectrum of light"), and the organic sensors for detecting light of different wavelength regions may be stacked in a direction perpendicular to the upper surface (110S) of the substrate of the organic sensor (600) as shown in FIG. 7 (e.g., Y direction). Here, the light of different wavelength regions may be selected from a visible wavelength region; an infrared wavelength region including a near-infrared wavelength region; and an ultraviolet (UV) wavelength region.

[0345] In one embodiment, any organic sensor may have a pixel array structure of an organic sensor (600) as shown in FIG. 6.

[0346] FIG. 7 is a cross-sectional view of an organic sensor according to one embodiment.

[0347] Referring to FIG. 7, an organic sensor (700) according to one embodiment comprises a visible light sensor (50) including a light sensing element (50a, 50c), a semiconductor substrate (110) on which a transmission transistor (not shown) and a charge storage (55) are integrated; a lower insulating layer (60); a color filter layer (70); an insulating layer (80) (wherein the insulating layer (80) may be an upper insulating layer when present together with the lower insulating layer (60) in the same organic sensor); and a photoelectric element (100).

[0348] The semiconductor substrate (110) may be a silicon substrate, and a light sensing element (50a, 50c), a transfer transistor (not shown), and a charge storage (55) are integrated therein. The light sensing element (50a, 50c) may be a photodiode (e.g., a silicon-based photodiode).

[0349] The light sensing elements (50a, 50c) can detect light, and the information detected by the light sensing elements can be transmitted by a transmission transistor, and the charge storage (55) is electrically connected to the photoelectric element (100), and the information of the charge storage (55) can be transmitted by a transmission transistor.

[0350] Metal wiring (not shown) and pads (not shown) are also formed on the semiconductor substrate (110). The metal wiring and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (g), and alloys thereof, to reduce signal delay, but are not limited thereto. However, the structure is not limited to the above, and the metal wiring and pads may be located on the lower part of the light sensing element (50a, 50c).

[0351] A lower insulating layer (60) is formed over the metal wiring and pads. The lower insulating layer (60) may be made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The lower insulating layer (60) has a trench that exposes a charge storage (55). The trench may be filled with a filler.

[0352] A color filter layer (70) is formed on the lower insulating film (60).

[0353] The color filter layer (70) includes a red filter (70a) formed on a red pixel and a blue filter (70c) formed on a blue pixel. FIG. 7 illustrates an example without a green filter, but a green filter may be provided depending on the case.

[0354] An insulating layer (80) is formed on the color filter layer (70). The insulating layer (80) eliminates the step difference caused by the color filter layer (70) and flattens it. The insulating layer (80) and the lower insulating layer (60) have a contact hole (not shown) that exposes a pad and a through hole (85) that exposes a charge storage (55) of a green pixel.

[0355] A photoelectric element (100) as described above is formed on the insulating layer (80). As described above, the photoelectric element (100) includes a first electrode (10) and a second electrode (20) facing each other and an active layer (30) located between them. The photoelectric element (100) may be the photoelectric element (100) of FIG. 1 and may be the photoelectric element (200) of FIG. 2.

[0356] The first electrode (10) and the second electrode (20) may both be light-transmitting electrodes, and the active layer (30) may selectively absorb and / or convert light in the near-infrared wavelength region (photoelectric conversion into an electrical signal).

[0357] As illustrated in FIG. 7, the active layer (30) can additionally selectively absorb and / or convert light (e.g., red light) in the visible light wavelength range (photoelectric conversion into an electrical signal).

[0358] A condensing lens (not shown) may be further formed on the photoelectric element (100). The condensing lens can control the direction of incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0359] FIG. 7 illustrates a structure in which a photoelectric element (100) that selectively absorbs light in the near-infrared wavelength region is stacked on a semiconductor substrate (110), but is not limited thereto. Among the light incident on the organic sensor (700) from the upper surface of the photoelectric element (100), at least the light in the near-infrared wavelength region is mainly absorbed by the active layer (30) and photoelectrically converted, so that the visible light (e.g., blue, green and / or red) wavelength region passes through the first electrode (10) and can be detected by the light sensing element (50a, 50c).

[0360] FIG. 8 is a cross-sectional view of an organic sensor according to another embodiment.

[0361] Referring to FIG. 8, an organic sensor (800) according to one embodiment includes a visible light sensor (50) and a photoelectric element (100).

[0362] Referring to FIG. 8, in an organic sensor (800) according to one embodiment, the visible light sensor (50) may be a combination of a photodiode integrated on a semiconductor substrate (110) and a photoelectric element disposed on the semiconductor substrate (110), and the photoelectric element (100) may be a separate photoelectric element.

[0363] Accordingly, when the organic sensor comprises a photoelectric element (e.g., 100) comprising a near-infrared absorbing material and is configured to selectively absorb and / or convert light at a first near-infrared wavelength (photoelectric conversion into an electrical signal), it may include additional sensors (e.g., 50a and / or 50b) configured to selectively absorb and / or convert light (e.g., photoelectric conversion) in individual wavelength regions of incident light, and the organic sensor may further include an additional photoelectric element (e.g., 50c) on a semiconductor substrate.

[0364] The additional photoelectric element may be located between the photoelectric element (100) and the semiconductor substrate (110), and the additional photoelectric element is configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in an additional wavelength region of the incident light. The light in the additional wavelength region may be different from the first near-infrared wavelength region and may be different from the individual wavelength region absorbed by the additional sensor (50a and / or 50b).

[0365] A blue light sensing element (50a), a red light sensing element (50b), a charge storage (55), and a transfer transistor (not shown) are integrated on a semiconductor substrate (110). The blue light sensing element (50a) and the red light sensing element (50b) are photodiodes (e.g., silicon-based photodiodes) and are spaced apart from each other in the horizontal direction of the semiconductor substrate (110). The blue light sensing element (50a) is integrated into a blue pixel, and the red light sensing element (50b) is integrated into a red pixel.

[0366] A lower insulating layer (60) and a color filter layer (70) are formed on the semiconductor substrate (110). The color filter layer (70) includes a blue filter (70a) superimposed on a blue light sensing element (50a) and a red filter (70b) superimposed on a red light sensing element (50b).

[0367] An intermediate insulating layer (65) is formed on the color filter layer (70). The lower insulating layer (60) and the intermediate insulating layer (65) may have through holes (e.g., trenches (85)) that expose the charge storage (140). The through holes (e.g., trenches (85))) may be filled with a filler. At least one of the lower insulating layer (60) or the intermediate insulating layer (65) may be omitted.

[0368] An additional photoelectric element (850) is formed on the intermediate insulating layer (65).

[0369] As illustrated in FIG. 8, the additional photoelectric element (850) is also a green sensor (50c), but in one embodiment, the additional photoelectric element (850) may be configured to detect light (e.g., optionally absorb and / or photoelectrically convert into an electrical signal) of a wavelength region different from the green wavelength region and a non-visible light wavelength region (e.g., a second near-infrared wavelength region) different from the first near-infrared wavelength region detected by the photoelectric element (100).

[0370] The additional photoelectric element (850) comprises a first electrode (lower electrode, 101) and a second electrode (upper electrode, 102) facing each other, and an active layer (103) between the first electrode (101) and the second electrode (102). One of the first electrode (101) and the second electrode (102) is an anode and the other is a cathode.

[0371] The first electrode (101) and the second electrode (102) are both light-transmitting electrodes, and in one embodiment, the light-transmitting electrode may be made of a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a metal thin film having a thin thickness of several nanometers or tens of nanometers, or a metal thin film having a thin thickness of several nanometers to tens of nanometers doped with a metal oxide.

[0372] The active layer (103) may have a composition similar to that of the active layer (30) of the photoelectric device (100 and / or 200) and may include a near-infrared absorbing material. The active layer (103) may be a photoelectric conversion layer configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in at least a portion of a wavelength region (e.g., wavelength spectrum of light) or may convert (e.g., absorbed light) into an electrical signal.

[0373] The active layer (103) can convert at least some of, for example, light in a green wavelength region (hereinafter referred to as "green light"), light in a blue wavelength region (hereinafter referred to as "blue light"), light in a red wavelength region (hereinafter referred to as "red light"), light in an infrared wavelength region (hereinafter referred to as "infrared light"), light in an ultraviolet wavelength region (hereinafter referred to as "ultraviolet light"), or any combination thereof into an electrical signal.

[0374] For example, the active layer (103) may be configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) at least one of green light, blue light, red light, infrared light, or ultraviolet light.

[0375] Here, selectively absorbing any one of green, blue, red, infrared, and ultraviolet light means the peak absorption wavelength (λ) of the absorption spectrum. max This means that it exists in any one of the ranges of approximately 500 nm to 600 nm, approximately 380 nm or more and less than 500 nm, approximately 600 nm or more and 700 nm or less, and approximately 700 nm or more and 3000 nm or less, and that the absorption spectrum within the corresponding wavelength range is significantly higher than the absorption spectrum in other wavelength ranges.

[0376] The active layer (103) can form a pn junction with at least one p-type semiconductor and at least one n-type semiconductor, and can generate excitons by receiving light from the outside, and then separate the generated excitons into holes and electrons. The p-type semiconductor and the n-type semiconductor may each be light-absorbing materials, for example, at least one of the p-type semiconductor and the n-type semiconductor may be an organic light-absorbing material. As an example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective light-absorbing material that selectively absorbs light in a predetermined wavelength range, for example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective organic light-absorbing material. The p-type semiconductor and the n-type semiconductor have a peak absorption wavelength (λ) in the same or different wavelength range among the green wavelength range, the blue wavelength range, the red wavelength range, and the infrared wavelength range. max Can have ).

[0377] For example, a p-type semiconductor may be an organic material having a core structure including an electron-donating moiety, a pi-conjugated linker, and an electron-accepting moiety. A p-type semiconductor may be represented, for example, by the following chemical formula 2, but is not limited thereto.

[0378] [Chemical Formula 2]

[0379] EDG - HA - EAG

[0380] In the above chemical formula 1,

[0381] HA may be a C2 to C30 heterocyclic group having at least one of S, Se, Te, and Si, EDG may be an electron donor, and EAG may be an electron acceptor. As an example, a p-type semiconductor represented by Chemical Formula 2 may be represented, for instance, by the following Chemical Formula 2A.

[0382] [Chemical Formula 2A]

[0383]

[0384] In the above chemical formula 2A,

[0385] X is S, Se, Te, SO, SO2, or SiR a R b It could be,

[0386] Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fusion rings selected from these, and

[0387] Ar 1a and Ar 2a Each may be an independently substituted or unsubstituted C6 to C30 aryl group or a substituted or unsubstituted C3 to C30 heteroaryl group, and Ar 1a and Ar 2a Each can exist independently or combine with others to form a fusion ring, and R 1a to R 3a , R a and R b Each may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

[0388] For example, in chemical formula 2A, Ar 1a and Ar 2aEach independently a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted It may be selected from benzotriazinyl groups, substituted or unsubstituted pyridopyrazinyl groups, substituted or unsubstituted pyridopyrimidinyl groups and substituted or unsubstituted pyridopyridazinyl groups.

[0389] For example, Ar of chemical formula 1A 1a and Ar 2a They can fuse with each other to form a ring, and Ar 1a and Ar 2a is, for example, a single bond, -(CR g R h ) n2 - (n2 is 1 or 2), -O-, -S-, -Se-, -N=, -NR i -, -SiR j R k - and -GeR l R m - Can be connected to one selected from to form a loop. Here, R g to R mEach may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

[0390] For example, a p-type semiconductor represented by Chemical Formula 2 can be represented, for instance, by the following Chemical Formula 2B.

[0391] [Chemical Formula 2B]

[0392]

[0393] In the above chemical formula 2B,

[0394] X 1 It can be Se, Te, O, S, SO, or SO2, and

[0395] Ar 3 may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fusion rings selected from these, and

[0396] R 1 to R 3 Each can be independently selected from hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted C1 to C30 alkoxy groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C3 to C30 heteroaryl groups, halogens, cyano groups, cyano-containing groups, and combinations thereof.

[0397] G is a single bond, -O-, -S-, -Se-, -N=, -(CR f R g ) k -, -NR h -, -SiR i R j -, -GeR k R l -, -(C(R m )=C(R n ))- and SnR oR p Selected from, where R f , R g , R h , R i , R j , R k , R l , R m , R n , R o and R p Each can be independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups, substituted or unsubstituted C1 to C10 alkoxy groups and substituted or unsubstituted C6 to C12 aryl groups, and R f and R g , R i and R j , R k and R l , R m and R n and R o and R p Each can exist independently or be connected to form a loop, and k can be 1 or 2,

[0398] R 6a to R 6d and R 7a to R 7d Each can be independently selected from hydrogen, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C3 to C30 heteroaryl groups, halogens, cyano groups, cyano-containing groups, and combinations thereof, and

[0399] R 6a to R 6d Each can exist independently or two adjacent ones can be connected to form a fusion ring, and

[0400] R 7a to R 7d Each can exist independently, or two adjacent ones can be connected to form a fusion ring.

[0401] For example, Ar of chemical formula 2B 3 ≠ benzene, naphthylene, anthracene, thiophene, selenophene, telluropene, pyridine, pyrimidine, or two or more fused rings selected from these. The n-type semiconductor may be, for example, a fullerene or a fullerene derivative, but is not limited thereto.

[0402] The active layer (103) may be an intrinsic layer (Layer I) in which a p-type semiconductor and an n-type semiconductor are mixed in the form of a bulk heterojunction. In this case, the p-type semiconductor and the n-type semiconductor may be mixed in a volume ratio of approximately 1:9 to 9:1, for example, in a volume ratio of approximately 2:8 to 8:2 within the above range, for example, in a volume ratio of approximately 3:7 to 7:3 within the above range, for example, in a volume ratio of approximately 4:6 to 6:4 within the above range, and for example, in a volume ratio of approximately 5:5 within the above range. The active layer (103) may include a double layer comprising a p-type layer including the aforementioned p-type semiconductor and an n-type layer including the aforementioned n-type semiconductor. At this time, the thickness ratio of the p-type layer and the n-type layer may be approximately 1:9 to 9:1, and within the above range, for example, approximately 2:8 to 8:2, approximately 3:7 to 7:3, approximately 4:6 to 6:4, or approximately 5:5. The active layer (103) may further include a p-type layer and / or an n-type layer in addition to the intrinsic layer. The p-type layer may include the aforementioned p-type semiconductor, and the n-type layer may include the aforementioned n-type semiconductor. For example, it may be included in various combinations such as a p-type layer / I-layer, an I-layer / n-type layer, a p-type layer / I-layer / n-type layer, etc.

[0403] As illustrated in FIG. 8, the active layer (103) is configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) green light, but is not limited thereto, and in one embodiment, the active layer (103) may selectively absorb and / or convert (photoelectric conversion into an electrical signal) blue light, red light, or light in the visible light region or non-visible light region (e.g., a second wavelength region of near-infrared light selectively transmitted by the photoelectric element (100)).

[0404] FIG. 9 is a cross-sectional view of an organic sensor according to another embodiment.

[0405] Referring to FIG. 9, as in the above embodiment, an organic sensor (900) according to one embodiment includes a visible light sensor (50) and a photoelectric element (100).

[0406] The above visible light sensor (50) includes a blue light sensing element (50a) and a red light sensing element (50b) integrated on a semiconductor substrate (110) and an additional photoelectric element (850), and the additional photoelectric element (850) includes a green sensor (50c) disposed on the semiconductor substrate (110). The blue light sensing element (50a) and the red light sensing element (50b) may be photodiodes (e.g., silicon-based photodiodes), and the additional photoelectric element (850) may be a green sensor (50c) that is the same as or different from the green sensor (50c) shown in FIG. 8. The additional photoelectric element (850) includes a first electrode (101), an active layer (103), and a second electrode (top electrode, 102), and the photoelectric element (100) includes a first electrode (10), an active layer (30), and a second electrode (20).

[0407] However, in the organic sensor (900) according to the present embodiment, the blue light sensing element (50a) and the red light sensing element (50b) integrated on the semiconductor substrate (110) are stacked in a vertical direction (e.g., perpendicular to the upper surface (110S) of the semiconductor substrate (110)).

[0408] The blue light sensing element (50a) and the red light sensing element (50b) can be configured to detect light by selectively absorbing and / or converting (photoelectric conversion into an electrical signal) light in each wavelength region according to the stacking depth.

[0409] Referring to FIG. 10, an organic sensor (950) according to one embodiment includes a visible light sensor (50) and a photoelectric element (100), similar to the above-described embodiment.

[0410] The above visible light sensor (50) includes a blue light sensing element (50a), a green sensor (50b), and a red light sensing element (50c) directly connected to a semiconductor substrate (110), and the blue light sensing element (50a), the green sensor (50c), and the red light sensing element (50b) may be photodiodes.

[0411] In the organic sensor (950) according to the present embodiment, a blue light sensing element (50a), a green sensor (50c), and a red light sensing element (50b) integrated on a semiconductor substrate (110) are stacked in a vertical direction. The blue light sensing element (50a), the green sensor (50c), and the red light sensing element (50b) may be configured to detect light by selectively absorbing and / or converting (photoelectric conversion into an electrical signal) light in each wavelength region according to the stacking depth from the upper surface (110S). In other words, a red light detection element (50b) configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) red light in the long wavelength region is positioned deeper from the upper surface (110S) of the semiconductor substrate (110) than a blue light detection element (50a) configured to selectively absorb and / or convert (e.g., photoelectric conversion into an electrical signal) blue light in the short wavelength region, and a green sensor (50c) configured to selectively absorb and / or convert green light in the intermediate wavelength region is positioned deeper from the upper surface (110S) of the semiconductor substrate (110) than the blue light detection element (50a) and closer to the upper surface (110S) of the semiconductor substrate (110) than the red light detection element (50b). In this way, by separating the absorption wavelengths according to the stacking depth, the color filter layer (70) can be omitted.

[0412] FIG. 11 is a cross-sectional view of an organic sensor according to another embodiment.

[0413] Referring to FIG. 11, an organic sensor (970) according to the present embodiment comprises a first photoelectric element (e.g., infrared / near-infrared photoelectric element (1200d)) configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in an infrared / near-infrared wavelength spectrum (e.g., a first near-infrared wavelength region) of incident light, and at least one additional photoelectric element (e.g., 1200a to 1200c) vertically stacked between the first photoelectric element and a semiconductor substrate (e.g., 110), wherein each additional photoelectric element comprises a photoelectric conversion layer and may be configured to selectively absorb and / or convert (e.g., photoelectric conversion) an individual (e.g., each) wavelength region that is different from the first near-infrared wavelength region of incident light. The individual (e.g., each) wavelength region may be a visible light or non-visible light wavelength region. For example, as illustrated in FIG. 11, the organic sensor (970) may include additional photoelectric elements comprising a red photoelectric element configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in the red wavelength spectrum of the incident light, a green photoelectric element configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in the green wavelength spectrum of the incident light, and a blue photoelectric element configured to selectively absorb and / or convert (photoelectric conversion into an electrical signal) light in the blue wavelength spectrum of the incident light. The red photoelectric element, the green photoelectric element, and the blue photoelectric element are stacked in a vertical direction (e.g., the Z direction).

[0414] Accordingly, as illustrated in FIG. 11, the organic sensor (970) may include a plurality of photoelectric elements (1200a to 1200d) stacked vertically on a semiconductor substrate (110), and accordingly, the plurality of photoelectric elements (1200a to 1200d) overlap each other in a direction perpendicular to the upper surface (110S) of the semiconductor substrate (110).

[0415] Although the organic sensor (970) is illustrated as comprising a plurality of additional photoelectric elements (1200a to 1200c) in addition to a first photoelectric element (e.g., a fourth photoelectric element (1200d)) configured to selectively absorb and / or convert light in a first near-infrared wavelength region, the organic sensor (970) may also include one additional photoelectric element (e.g., any one of 1200a to 1200c) between the photoelectric element (1200d) and the semiconductor substrate (110).

[0416] An organic sensor (970) according to the present embodiment comprises a semiconductor substrate (110), a lower insulating layer (80a), a first intermediate insulating layer (80b), a second intermediate insulating layer (80c), an upper insulating layer (80d), a first photoelectric element (1200a), a second photoelectric element (1200b), a third photoelectric element (1200c), and a fourth photoelectric element (1200d). In the present embodiment, the fourth photoelectric element (1200d) may be a first photoelectric element configured to selectively absorb and / or convert light (photoelectric conversion into an electrical signal) in a first near-infrared wavelength region, and the first to third photoelectric elements (1200a to 1200c) may be at least one additional photoelectric element configured to collectively selectively absorb and / or convert light (photoelectric conversion into an electrical signal) in one or more separate wavelength regions different from the first near-infrared wavelength region. As described, the first to fourth photovoltaic elements (1200a to 1200d) are stacked vertically on a semiconductor substrate (110), and the first to fourth photovoltaic elements (1200a to 1200d) overlap each other in a direction extending vertically to the upper surface (110S) of the semiconductor substrate (110).

[0417] The semiconductor substrate (110) may be a silicon substrate, and a transfer transistor (not shown) and a charge storage are integrated therein.

[0418] Each separate photoelectric element (1200a to 1200c) may have the same structure as the additional photoelectric element (850) shown in FIGS. 8 and 9, except that each separate photoelectric element (1200a-1200c) is configured to photoelectrically convert a separate wavelength region of visible light and / or non-visible light (e.g., near-infrared). The photoelectric conversion layer (1230a-1230c) may have the same structure and / or composition as various exemplary embodiments (e.g., different exemplary embodiments) of the aforementioned active layer (103) and / or active layer (30), and thus selectively absorbs and / or converts (e.g., photoelectrically converts into an electrical signal) light in different wavelength regions of visible light and / or non-visible light, and may include the near-infrared absorbing material. The fourth photoelectric element (1200d) may have the same structure as the photoelectric element (100) of FIG. 1 and / or the photoelectric element (200) of FIG. 2. The photoelectric conversion layer (1230d) may have the same structure and / or composition as the aforementioned active layer (30) and may include a near-infrared absorbing material.

[0419] A first photoelectric element (1200a) is formed on the lower insulating layer (80a). The first photoelectric element (1200a) includes a photoelectric conversion layer (1230a). The first photoelectric element (1200a) may be a photoelectric element according to any one of the aforementioned embodiments. The photoelectric conversion layer (1230a) may selectively absorb and / or convert (photoelectrically convert into an electrical signal) light in one of the infrared, red, blue, and green wavelength spectra of the incident light. For example, the first photoelectric element (1200a) may be a blue photoelectric element.

[0420] A first intermediate insulating layer (80b) is formed on the first photoelectric element (1200a). A second photoelectric element (1200b) is formed on the first intermediate insulating layer (80b). The second photoelectric element (1200b) includes a photoelectric conversion layer (1230b). The second photoelectric element (1200b) may be a photoelectric element according to any one of the aforementioned embodiments. The photoelectric conversion layer (1230b) may selectively absorb and / or convert (photoelectrically convert into an electrical signal) light in one of the infrared, red, blue, and green wavelength spectra of the incident light. For example, the second photoelectric element (1200b) may be a green photoelectric element.

[0421] A second intermediate insulating layer (80c) is formed on the second photoelectric element (1200b).

[0422] A third photoelectric element (1200c) is formed on the second intermediate insulating layer (80c). The third photoelectric element (1200c) includes a photoelectric conversion layer (1230c). The third photoelectric element (1200c) may be a photoelectric element according to any one of the aforementioned embodiments. The photoelectric conversion layer (1230c) may selectively absorb and / or convert (photoelectrically convert into an electrical signal) light in one of the infrared, red, blue, and green wavelength spectra of the incident light. For example, the third photoelectric element (1200c) may be a red photoelectric element.

[0423] An upper insulating layer (80d) is formed on the third photovoltaic element (1200c).

[0424] The lower insulating layer (80a), the first and second intermediate insulating layers (80b, 80c) and the upper insulating layer (80d) have a plurality of through holes that expose charge storage units (55a, 55b, 55c, 55d).

[0425] A fourth photoelectric element (1200d) is formed on the upper insulating layer (80d). The fourth photoelectric element (1200d) includes a photoelectric conversion layer (1230d). The fourth photoelectric element (1200d) may be a photoelectric element according to any one of the aforementioned embodiments. The photoelectric conversion layer (1230d) may selectively absorb and / or convert (photoelectrically convert into an electrical signal) light in one of the infrared, red, blue, and green wavelength spectra of the incident light. For example, the fourth photoelectric element (1200d) may be an infrared / near-infrared photoelectric element that may include a near-infrared absorbing material.

[0426] In the drawing, the first photoelectric element (1200a), the second photoelectric element (1200b), the third photoelectric element (1200c), and the fourth photoelectric element (1200d) are stacked sequentially, but the present invention is not limited thereto and may be stacked in various orders.

[0427] As described above, the first photoelectric element (1200a), the second photoelectric element (1200b), the third photoelectric element (1200c), and the fourth photoelectric element (1200d) have a stacked structure, so the size of the organic sensor can be reduced to realize miniaturization.

[0428] FIG. 12 is a schematic diagram of an electronic device according to one embodiment.

[0429] Referring to FIG. 12, the electronic device (1100) may include a processor (1120), memory (1130), image sensor (1140), and display element (1150) electrically connected to each other via a bus (1110). The image sensor (1140) may include any sensor according to the above-described embodiment (e.g., organic sensor, photoelectric element, etc.). The memory (1130) may be a non-transient computer-readable medium and may store a command program. The processor (1120) may execute a stored command program to perform one or more functions. The processor (1120) may further execute a stored command program to display a generated image on the display element (1150). The processor (1120) may generate an output (e.g., an image to be displayed on the display element (1150)).

[0430] The aforementioned organic sensor can be applied to various electronic devices, such as cameras, camcorders, mobile phones with these sensors embedded therein, display devices, security devices, or medical devices, but is not limited thereto.

[0431] FIG. 13 is a block diagram of a digital camera including an image sensor according to one embodiment.

[0432] Referring to FIG. 13, the digital camera (1000) includes a lens (1010), an image sensor (1020), a motor (1030), and an engine (1040). The image sensor (1020) may be any one of the image sensors according to the embodiments shown in FIG. 3 to FIG. 5.

[0433] The lens (1010) collects incident light onto an image sensor (1020). The image sensor (1020) generates RGB data for the light received through the lens (1010).

[0434] In one embodiment, the image sensor (1020) can interface with the engine (1040).

[0435] The motor (1030) can adjust the focus of the lens (1010) or adjust the shutter in response to a control signal received from the engine (1040). The engine (1040) can control the image sensor (1020) and the motor (1030).

[0436] The above engine (1040) can be connected to a host / application (1050).

[0437] The above-described embodiment will be explained in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of the rights.

[0438] Synthetic example

[0439] Synthesis Example 1: Synthesis of a compound represented by Chemical Formula 1-1

[0440] [Chemical Formula 1-1]

[0441]

[0442] [Reaction Equation 1-1]

[0443]

[0444] i) Step 1: Synthesis of Compound (1-1C)

[0445] In a round-bottom flask under nitrogen pressure, 4,7-dibromo-5,6-dinitrobenzo[c][1,2,5]-thiadiazole (compound (1-1A)) (400 mg, 1.04 mmol) and N,N-diphenyl-5-(tributylstannyl)thiophene-2-amine (compound (1-1B)) (1.4 g, 2.60 mmol) were dissolved in toluene (10 mL) and dimethylformamide (DMF) (5 mL), and then tetrakis(triphenylphosphine)-palladium(0) (120 mg, 0.104 mmol) Add. Then, heat to 110 ℃ and reflux and stir for 12 hours. After cooling the reaction mixture to room temperature (24 ℃), add distilled water. After extraction with dichloromethane, the active layer is dried using MgSO4. After filtering the MgSO4, the reaction mixture is concentrated to obtain compound (1-1C).

[0446] UPLC-MS: [M+H] + 725.07

[0447] ii) Step 2: Synthesis of Compound (1-1D)

[0448] Compound (1-1C) (15 mg, 0.02 mmol) is dissolved in ethyl acetate / ethanol (2 mL / 2 mL) in a round-bottom flask under nitrogen pressure, and then 10 wt% Pd / C (3 mg, 0.002 mmol) and ammonium formate (8 mg, 0.124 mmol) are added. Afterward, the mixture is heated to 80 °C and stirred for 12 hours. The reaction mixture is cooled to room temperature (24 °C) and then passed through Celite to remove Pd / C. After washing with ethyl acetate, the filtrate is concentrated. The concentrate is dissolved again in ethyl acetate, passed through Celite, and the filtrate is concentrated to obtain compound (1-1D).

[0449] UPLC-MS: [M+H] + 664.96

[0450] iii) Step 3: Synthesis of the compound represented by Chemical Formula 1-1

[0451] In a round-bottom flask under nitrogen pressure, compound (1-1D) (13.7 mg, 0.02 mmol) was dissolved in acetic acid / chloroform (1 mL / 2 mL), and then phenanthrene-9,10-dione (compound (1-1E)) (5.2 mg, 0.024 mmol) was added, and then 60 Stir for 12 hours. After adding distilled water to the reaction mixture, the resulting solid is filtered and thoroughly washed with hexane / ethyl acetate. The filtered solid is vacuum dried to obtain 10 mg (yield: 60%) of the compound represented by Chemical Formula 1-1.

[0452] UPLC-MS: [M+H] + 837.22

[0453] Synthesis Example 2: Synthesis of a compound represented by Chemical Formula 1-2

[0454] [Chemical Formula 1-2]

[0455]

[0456] [Reaction Equation 1-2]

[0457]

[0458] A compound represented by Chemical Formula 1-2 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the third step of Synthesis Example 1, 4,7-phenanthroline-5,6-dione (4,7-phenanthroline-5,6-dione, compound (1-2E)) is used instead of compound (1-1E).

[0459] UPLC-MS: [M+H] + 839.07

[0460] Synthesis Example 3: Synthesis of a compound represented by Chemical Formula 1-3

[0461] [Chemical Formula 1-3]

[0462]

[0463] [Reaction Equation 1-3]

[0464]

[0465] A compound represented by Chemical Formula 1-3 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the third step of Synthesis Example 1, benzo[1,2-b:4,3-b']dithiophene-4,5-dione (compound (1-3E)) is used instead of compound (1-1E).

[0466] MALDI-TOF-MS: [M] + 847.97:

[0467] Synthesis Example 4: Synthesis of a compound represented by Chemical Formula 1-4

[0468] [Chemical Formula 1-4]

[0469]

[0470] [Reaction Equation 1-4]

[0471]

[0472] A compound represented by Chemical Formula 1-4 is synthesized by carrying out the same method as in Synthesis Example 1, except that 3,6-bis(trifluoromethyl)-phenanthrene-9,10-dione (compound (1-4E)) is used instead of compound (1-1E) in the third step of Synthesis Example 1.

[0473] Synthesis Example 5: Synthesis of a compound represented by Chemical Formula 1-5

[0474] [Chemical Formula 1-5]

[0475]

[0476] [Reaction Equation 1-5]

[0477]

[0478] A compound represented by Chemical Formula 1-5 is synthesized by carrying out the same method as in Synthesis Example 1, except that 4,7-dibromo-5,6-dinitrobenzo[c][1,2,5]-selenadiazole (4,7-dibromo-5,6-dinitrobenzo[c][1,2,5]-selenadiazole, compound (1-5A)) is used instead of compound (1-1A) in the first step of Synthesis Example 1.

[0479] Synthesis Example 6: Synthesis of a compound represented by Chemical Formula 1-6

[0480] [Chemical Formula 1-6]

[0481]

[0482] [Reaction Equation 1-6]

[0483]

[0484] A compound represented by Chemical Formula 1-6 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the first step of Synthesis Example 1, N,N-dimethyl-5-(tributylstannyl)thiophen-2-amine (compound (1-6B)) is used instead of compound (1-1B) and in the third step, benzo[1,2-b:4,3-b']dithiophene-4,5-dione (compound (1-3E)) is used instead of compound (1-1E).

[0485] Synthesis Example 7: Synthesis of a compound represented by Chemical Formula 1-7

[0486] [Chemical Formula 1-7]

[0487]

[0488] [Reaction Equation 1-7]

[0489]

[0490] A compound represented by Chemical Formula 1-7 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the first step of Synthesis Example 1, 1-methyl-N,N-diphenyl-5-(tributylstannyl)-1H-pyrrol-2-amine (compound (1-7B)) is used instead of compound (1-1B).

[0491] Synthesis Example 8: Synthesis of a compound represented by Chemical Formula 1-8

[0492] [Chemical Formula 1-8]

[0493]

[0494] [Reaction Equation 1-8]

[0495]

[0496] A compound represented by Chemical Formula 1-8 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the first step of Synthesis Example 1, N,N-di-p-tolyl-5-(tributylstannyl)thiophen-2-amine (compound (1-8B)) is used instead of compound (1-1B).

[0497] UPLC-MS: [M+H] + 893.17

[0498] Synthesis Example 9: Synthesis of a compound represented by Chemical Formula 1-9

[0499] [Chemical Formula 1-9]

[0500]

[0501] [Reaction Equation 1-9]

[0502]

[0503] A compound represented by Chemical Formula 1-9 is synthesized by carrying out the same method as in Synthesis Example 1, except that in the first step of Synthesis Example 1, N,N-Bis(4-methoxyphenyl)-5-(tributylstannyl)thiophen-2-amine (compound (1-9B)) is used instead of compound (1-1B).

[0504] UPLC-MS: [M+H] + 957.31

[0505] Comparative Synthesis Example 1: Synthesis of a compound represented by Chemical Formula 2-1

[0506] A compound represented by the following chemical formula 2-1 is synthesized by the method described in the paper (D. Ma, ZY Wang et al. J. Phys. Chem. C, 2009, 113, 1589-1595).

[0507] [Chemical Formula 2-1]

[0508]

[0509] Comparative Synthesis Example 2: Synthesis of a compound represented by Chemical Formula 2-2

[0510] [Chemical Formula 2-2]

[0511]

[0512] [Reaction Equation 2-2]

[0513]

[0514] In a round-bottom flask under nitrogen pressure, 4,9-dibromo-[1,2,5]thiadiazolo[3,4-g]quinoxaline, compound (2-3A)) (530 mg, 1.53 mmol), diphenylamine (compound (2-3B)) (646 mg, 3.82 mmol), and sodium tert-butoxide (317 mg, 4.59 mmol) were dissolved in toluene (10 mL), and then bis(tri-tert-butylphosphine)palladium (0) (78 mg, 0.153 mmol) was added. Afterward, the mixture was heated to 110 °C and stirred under reflux for 24 hours. After cooling the reactants to room temperature (24 ℃), the reactants are concentrated, and then ethyl acetate, distilled water, and an aqueous ammonium chloride solution are added in sequence. The active layer is extracted using ethyl acetate and then dried using MgSO4. After filtering the MgSO4, the solution is concentrated, and then the concentrate is subjected to silica chromatography. (Eluent: Ethyl acetate:Hexane=1:4) The purified material is vacuum dried to obtain 120 mg of a green solid (yield: 15%).

[0515] 1 H NMR (300 MHz, CD2Cl2): d 8.57 (s, 2H), d 7.19 (d, 8H), d 7.06 (d, 8H), d 6.98 (t, 4H).

[0516] UPLC-MS: [M+H] + 523.14

[0517] Comparative Synthesis Example 3: Synthesis of a compound represented by Chemical Formula 2-3

[0518] A compound represented by Chemical Formula 2-3 is synthesized using the method described in Scheme 1 of the paper (ACS Nano, Highly Stable Organic Small Molecular Nanoparticles as an Advanced and Biocompatible Phototheranostic Agent of Tumor in Living Mice, 2017, 7177-7188).

[0519] [Chemical Formula 2-3]

[0520]

[0521] Evaluation I: Absorption properties

[0522] The compounds obtained in Synthesis Example 1, Synthesis Example 2, Synthesis Example 3, Synthesis Example 8, Synthesis Example 9, Comparative Synthesis Example 1, and Comparative Synthesis Example 2 are added to a solvent at a concentration of 1 / 10 -5 Solutions were prepared by dissolving the compounds at a concentration of M, and the absorption characteristics of the compounds in solution were evaluated. Dichloromethane was used as the solvent for the compounds obtained in Synthesis Examples 1, 2, 8, 9, Comparative Synthesis Example 1, and Comparative Synthesis Example 2, while chlorobenzene was used as the solvent for the compound obtained in Synthesis Example 3. The results are listed in Table 1. The absorption characteristics were evaluated using a Shimadzu UV-3600 Plus UV-Vis-NIR spectrometer to determine the maximum absorption wavelength (λ max Measure and evaluate ).

[0523] In addition, the compounds obtained in Synthesis Examples 1, 2, 8, and 9, as well as Comparative Synthesis Example 1 and Comparative Synthesis Example 2, were each deposited onto a glass substrate by spin coating to evaluate the light absorption characteristics in the thin film state. The light absorption characteristics were evaluated using a Shimadzu UV-3600 Plus UV-Vis-NIR spectrometer to determine the maximum absorption wavelength (λmax Measure and evaluate ). Record the results in Table 2.

[0524] Meanwhile, for the compounds synthesized in Synthesis Examples 4 to 6 and Comparative Synthesis Example 3, DFT and TD-DFT calculations (wB97X-D function with 6-311G(d,p) basis set) were performed using the Gaussian09 (G09) program, assuming they were toluene solutions. The results are shown in Table 3.

[0525] λ max (nm) (solution) Synthesis Example 1 963 Synthesis Example 2 1051 Synthesis Example 3 1032 Synthesis Example 8 1000 Synthesis Example 9 1064 Comparative Synthesis Example 1 594 Comparative Synthesis Example 2 692

[0526] λ max (nm) (thin film) Synthesis Example 1 1010 Synthesis Example 2 1025 Synthesis Example 8 1050 Synthesis Example 9 1091 Comparative Synthesis Example 1 623 Comparative Synthesis Example 2 690

[0527] λ max (nm) (solution) Synthesis Example 4 1028 Synthesis Example 5 1023 Synthesis Example 6 1053 Comparative Synthesis Example 3 780

[0528] Referring to Tables 1 to 3, it can be seen that the compounds according to Synthetic Examples 1 to 6, 8 and 9 exhibit good wavelength absorption in the near-infrared wavelength region compared to the compounds according to Comparative Synthetic Examples 1 to 3.

[0529] Evaluation II: Energy Levels and Band Gap

[0530] After forming thin films by depositing compounds according to Synthesis Examples 1 to 9 and Comparative Synthesis Examples 1 to 3, the HOMO energy level, LUMO energy level, and band gap for each thin film were calculated using the method of the “Gausssian 09 program with B3LYP / 6-31 G(d) level theory” described in “MJ Frisch, et al., Gaussian 09, Revision D.01; Gaussian, Inc.: Wallingford, CT (2009)”. Among these, the results of Synthesis Examples 1 to 9 and Comparative Synthesis Examples 1 and 2 are listed in Table 4.

[0531] HOMO (eV) LUMO (eV) Band gap energy (eV) Synthesis Example 1 -4.60 -3.31 1.29 eV Synthesis Example 2 -4.39 -3.21 1.18 eV Synthesis Example 3 -4.52 -3.32 1.20 eV Synthesis Example 4 -4.74 -3.53 1.21 eV Synthesis Example 5 -4.55 -3.34 1.21 eV Synthesis Example 6 -4.28 -3.10 1.18 eV Synthesis Example 8 -4.46 -3.22 1.24 eV Synthesis Example 9 -4.26 -3.10 1.16 eV Comparative Synthesis Example 1 -5.26 -3.70 1.56 eV Comparative Synthesis Example 2 -5.03 -3.24 1.79 eV

[0532] Referring to Table 4, the compounds of Synthesis Examples 1 to 9 have smaller bandgap energies compared to the compounds of Comparative Synthesis Examples 1 and 2, so they can effectively absorb light in the near-infrared wavelength region.

[0533] Evaluation III: Deposition Characteristics

[0534] The deposition characteristics of the compounds according to Synthesis Examples 1 to 9 and Comparative Synthesis Examples 1 to 3 are evaluated. The deposition characteristics are evaluated by thermogravimetric analysis, and the deposition characteristics are evaluated from the weight loss with increasing temperature by sublimating the compounds under a high vacuum of 10 Pa or less. Among these, the results of Synthesis Example 1 are listed in Table 5.

[0535] T s (℃)(-10 wt%) Synthesis Example 1 331 ℃

[0536] * T s (°C) -10 wt%): Temperature at the point when the sample weight decreases by 10 wt%

[0537] Referring to Table 5, it can be confirmed that the compound according to Synthesis Example 1 is depositable.

[0538] Examples and Comparative Examples: Fabrication of Photovoltaic Devices

[0539] An anode with a thickness of 150 nm is formed by depositing ITO onto a glass substrate by sputtering. Subsequently, a photoelectric conversion layer with a thickness of 150 nm is formed by co-depositing compounds obtained in Synthesis Examples 1 to 9 and Comparative Synthesis Examples 1 to 3 onto the anode in a 1:1 volume ratio with C60, respectively. Subsequently, an auxiliary layer is formed by depositing C60 onto the photoelectric conversion layer. Subsequently, a cathode with a thickness of 7 nm is formed by sputtering ITO onto the auxiliary layer. Subsequently, an anti-reflective layer with a thickness of 50 nm is formed by depositing aluminum oxide (Al2O3) onto the cathode and encapsulating it with a glass plate to fabricate a photoelectric device according to Examples 1 to 9 and Comparative Examples 1 to 3.

[0540] Evaluation IV: Photoelectric Conversion Efficiency

[0541] The photoelectric conversion efficiency of the photoelectric devices according to Examples 1 to 9 and Comparative Examples 1 to 3 is evaluated. The photoelectric conversion efficiency is measured using an IPCE measurement system (TNE tech, Korea). First, the system is calibrated using a Si photodiode (Hamamatsu, Japan), then the photoelectric device is mounted on the system and measured in the wavelength range of approximately 400 nm to approximately 1600 nm. Among these, the results of Example 1 and Comparative Example 2 are shown in FIG. 14. FIG. 14 is a graph showing the results of measuring the photoelectric conversion efficiency of the photoelectric devices according to Example 1 and Comparative Example 2.

[0542] Referring to FIG. 14, it can be seen that the photoelectric device according to Example 1 exhibits superior photoelectric conversion efficiency in the long wavelength region of approximately 1010 nm compared to the photoelectric device according to Comparative Example 2.

[0543] Although the embodiments have been described in detail above, the scope of the rights is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concepts defined in the following claims are also included within the scope of the rights. Explanation of the symbols

[0544] 10, 101: First electrode 20, 102: Second electrode 30, 103: Active layer 50a, 50b, 50c: Photodiodes 55: Charge storage 70a, 70b, 70c: Color filters 80: Insulating layer 100, 200: Photovoltaic device 300, 400, 500, 600, 700, 800, 900, 950, 970: Organic sensors

Claims

Claim 1 Near-infrared absorbing material comprising a compound represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, Ar 1 is benzene, and Ar 2 is one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b, and X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c , R d and R e Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), L 1 and L 2 Each is independently represented by the following chemical formula C-1, and R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and R 1 and R 2 Each can exist independently or be connected to form a loop, and R 3 and R 4 Each can exist independently or be connected to form a ring: [Chemical Formula B-3a] In the above chemical formula B-3a, Z 1 and Z 2 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof), Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, and [Formula B-3b] In the above chemical formula B-3b, Ar 3 and Ar 4 Each is independently selected from a substituted or unsubstituted C6 to C30 arerene group and a substituted or unsubstituted C3 to C30 heteroarene group, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, [Formula C-1] In the above chemical formula C-1, Y 1 ≡ O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R c Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), * is a connection point with Chemical Formula 1. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 In claim 1, the moiety represented by the above chemical formula B-3a is represented by the following chemical formula B-3aa, and the moiety represented by the above chemical formula B-3b is represented by the following chemical formula B-3bb, a near-infrared absorbing material: [Chemical formula B-3aa] [Chemical Formula B-3bb] In the above formulas B-3aa and B-3bb, the hydrogen of each aromatic ring may be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is the part bonded to the N-containing hexagonal ring of Formula 1, and X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e Selected from (here R a , R b , R c , R d and R e Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups). Claim 12 delete Claim 13 In claim 1, in the above chemical formula 1, *-N(R 1 )(R 2 ) and *-N(R 3 )(R 4 ) is a near-infrared absorbing material, each independently represented by the following chemical formula D-1 or chemical formula D-2: [Chemical Formula D-1] In the above chemical formula D-1, Ar 5 and Ar 6 Each is independently selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group, and * is a connection point with Formula 1, [Formula D-2] In the above chemical formula D-2, Ar 7 and Ar 8 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2), * is a connection point with chemical formula 1. Claim 14 In Clause 13, the above formula D-1 is a near-infrared absorbing material represented by the following formula D-1a or formula D-1b: [Formula D-1a] In the above chemical formula D-1a, Z 1 To Z 10 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl group, C1 to C10 haloalkyl group, -SiH3, C1 to C10 alkylsilyl group, -NH2, C1 to C10 alkylamine group, C6 to C12 aryl group, C3 to C12 heteroaryl group, halogen, cyano group, or a combination thereof), Z 1 To Z 10 This CR x In the case of R x exists independently or Z 1 To Z 10 Two adjacent members can be connected to form a pentagonal aromatic ring or a hexagonal aromatic ring, * is a connection point with Chemical Formula 1, and [Chemical Formula D-1b] In the above chemical formula D-1b, X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e Selected from (here R a , R b , R c , R d and R e are each independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups), Z 1 To Z 6 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl group, C1 to C10 haloalkyl group, -SiH3, C1 to C10 alkylsilyl group, -NH2, C1 to C10 alkylamine group, C6 to C12 aryl group, C3 to C12 heteroaryl group, halogen, cyano group, or a combination thereof), Z 1 To Z 6 This CR x In the case of R x exists independently or Z 1 To Z 6 Two adjacent ones can be connected to form a pentagonal aromatic ring or a hexagonal aromatic ring, and * is a connection point with Chemical Formula 1. Claim 15 In claim 13, the above formula D-2 is a near-infrared absorbing material represented by the following formula D-2a, formula D-2b, or formula D-2c: [Formula D-2a] In the above chemical formula D-2a, G represents a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2), Z 1 To Z 8 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl group, C1 to C10 haloalkyl group, -SiH3, C1 to C10 alkylsilyl group, -NH2, C1 to C10 alkylamine group, C6 to C12 aryl group, C3 to C12 heteroaryl group, halogen, cyano group, or a combination thereof), Z 1 To Z 8 This CR x In the case of R x exists independently or Z 1 To Z 8 Two adjacent members can be connected to form a pentagonal aromatic ring or a hexagonal aromatic ring, * is a connection point with Chemical Formula 1, and [Chemical Formula D-2b] [Chemical Formula D-2c] In the above chemical formulas D-2b and D2c, G represents a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2), X a and X b -O-, -S-, -Se-, -Te-, -NR each independently p -, -SiR q R r - and -GeR s R t Selected from (here R p , R q , R r , R s and R t are each independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups), Z 1 To Z 4 Each independently N or CR x and (here R x is hydrogen, C1 to C6 alkyl group, C1 to C10 haloalkyl group, -SiH3, C1 to C10 alkylsilyl group, -NH2, C1 to C10 alkylamine group, C6 to C12 aryl group, C3 to C12 heteroaryl group, halogen, cyano group, or a combination thereof), Z 1 To Z 4 This CR x In the case of R x exists independently or Z 1 To Z 4 Two adjacent ones can be connected to each other to form a pentagonal aromatic ring or a hexagonal aromatic ring. Claim 16 In claim 1, the near-infrared absorbing material has a peak absorption wavelength in the wavelength range of 750 nm to 3000 nm. Claim 17 A near-infrared absorbing / blocking film comprising a near-infrared absorbing material according to any one of claims 1, 11, and 13 through 16. Claim 18 A photoelectric device comprising a first electrode and a second electrode facing each other, and an active layer located between the first electrode and the second electrode, wherein the active layer comprises a near-infrared absorbing material comprising a compound represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, Ar 1 is benzene, and Ar 2 is one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b, and X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c , R d , and R e Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), L 1 and L 2 Each is independently represented by the chemical formula C-1, and R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and R 1 and R 2 Each can exist independently or be connected to form a loop, and R 3 and R 4 Each can exist independently or be connected to form a ring, [Chemical Formula B-3a] In the above chemical formula B-3a, Z 1 and Z 2 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof), Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, and [Formula B-3b] In the above chemical formula B-3b, Ar 3 and Ar 4 Each is independently selected from a substituted or unsubstituted C6 to C30 arerene group and a substituted or unsubstituted C3 to C30 heteroarene group, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, [Formula C-1] In the above chemical formula C-1, Y 1 ≡ O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R c Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), * is a connection point with Chemical Formula 1. Claim 19 delete Claim 20 delete Claim 21 delete Claim 22 delete Claim 23 delete Claim 24 delete Claim 25 delete Claim 26 delete Claim 27 delete Claim 28 In claim 18, the photoelectric device [Chemical Formula B-3aa] wherein the moiety represented by the above-mentioned chemical formula B-3aa is represented by the following chemical formula B-3aa, and the moiety represented by the above-mentioned chemical formula B-3b is represented by the following chemical formula B-3bb. [Chemical Formula B-3bb] In the above formulas B-3aa and B-3bb, the hydrogen of each aromatic ring may be replaced with a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group, and * inside the aromatic ring is the part bonded to the N-containing hexagonal ring of Formula 1, and X a and X b -O-, -S-, -Se-, -Te-, -NR each independently a -, -SiR b R c - and -GeR d R e - is selected from (here R a , R b , R c , R d and R e Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups). Claim 29 delete Claim 30 In claim 18, in the above chemical formula 1, *-N(R 1 )(R 2 ) and *-N(R 3 )(R 4 ) is a photoelectric device, each independently represented by the following D-1 or chemical formula D-2: [Chemical Formula D-1] In the above chemical formula D-1, Ar 5 and Ar 6 Each is independently selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group, and * is a connection point with Formula 1, [Formula D-2] In the above chemical formula D-2, Ar 7 and Ar 8 Each is independently selected from substituted or unsubstituted C6 to C30 arerene groups and substituted or unsubstituted C3 to C30 heteroarenes, and G is a single bond, -O-, -S-, -Se-, -Te-, -N=, -NR a -, -SiR b R c -, -GeR d R e -, -(CR f R g ) n -, and -(C(R h )=C(R i Selected from ))-(here R a , R b , R c , R d , R e , R f , R g , R h and R i Each is independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl groups and substituted or unsubstituted C6 to C10 aryl groups, and R b and R c , R d and R e , R f and R g , or R h and R i Each can exist independently or be connected to form a loop, and -(CR f R g ) n - n is a score of 1 or 2), * is a connection point with chemical formula 1. Claim 31 In claim 18, the photoelectric device wherein the active layer further comprises a fullerene or a fullerene derivative. Claim 32 In claim 18, the photoelectric device wherein the peak absorption wavelength of the active layer belongs to the wavelength range of 750 nm to 3000 nm. Claim 33 A photoelectric device comprising a first electrode and a second electrode facing each other, an active layer located between the first electrode and the second electrode, and a charge auxiliary layer located between the first electrode and the active layer or between the second electrode and the active layer, wherein the charge auxiliary layer comprises a near-infrared absorbing material comprising a compound represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, Ar 1 is benzene, and Ar 2 is one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b, and X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c , R d and R e Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), L 1 and L 2 Each is independently represented by the following chemical formula C-1, and R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and R 1 and R 2 Each can exist independently or be connected to form a loop, and R 3 and R 4 Each can exist independently or be connected to form a ring: [Chemical Formula B-3a] In the above chemical formula B-3a, Z 1 and Z 2 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof), Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, and [Formula B-3b] In the above chemical formula B-3b, Ar 3 and Ar 4 Each is independently selected from a substituted or unsubstituted C6 to C30 arerene group and a substituted or unsubstituted C3 to C30 heteroarene group, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, [Formula C-1] In the above chemical formula C-1, Y 1 ≡ O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R c Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), * is a connection point with Chemical Formula 1. Claim 34 In paragraph 33, the photoelectric device, wherein the active layer further comprises the near-infrared absorbing material. Claim 35 delete Claim 36 delete Claim 37 delete Claim 38 delete Claim 39 An organic sensor comprising a photoelectric element according to any one of claims 18, 28 and 30 through 34. Claim 40 An organic sensor comprising: a semiconductor substrate; a first photoelectric element positioned on the semiconductor substrate and configured to selectively absorb light in a first near-infrared wavelength region; and an additional sensor configured to absorb light in a region different from the first near-infrared wavelength region, wherein the first photoelectric element comprises a near-infrared absorbing material comprising a compound represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, Ar 1 is benzene, and Ar 2 is one of the moiety represented by the following chemical formula B-3a or chemical formula B-3b, and X 1 is O, S, Se, Te, S(=O), S(=O2), NR a , CR b R c , or SiR d R e and, (here R a , R b , R c , R d and R e Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), L 1 and L 2 Each is independently represented by the following chemical formula C-1, and R 1 , R 2 , R 3 and R 4 Each is independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and R 1 and R 2 Each can exist independently or be connected to form a loop, and R 3 and R 4 Each can exist independently or be connected to form a ring: [Chemical Formula B-3a] In the above chemical formula B-3a, Z 1 and Z 2 Each independently N or CR a and (here R a is hydrogen, C1 to C6 alkyl groups, C1 to C10 haloalkyl groups, -SiH3, C1 to C10 alkylsilyl groups, -NH2, C1 to C10 alkylamine groups, C6 to C12 aryl groups, C3 to C12 heteroaryl groups, halogens, cyano groups, or combinations thereof), Ar 3 is selected from substituted or unsubstituted C6 to C30 arene groups and substituted or unsubstituted C3 to C30 heteroarene groups, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, and [Formula B-3b] In the above chemical formula B-3b, Ar 3 and Ar 4 Each is independently selected from a substituted or unsubstituted C6 to C30 arerene group and a substituted or unsubstituted C3 to C30 heteroarene group, and * inside the aromatic ring is a portion bonded to the N-containing hexagonal ring of Formula 1, [Formula C-1] In the above chemical formula C-1, Y 1 ≡ O, S, Se, Te, S(=O), S(=O)2, NR a or SiR b R c and (here R a , R b and R c Each is independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, -SiH3, a C1 to C10 alkylsilyl group, -NH2, a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof), * is a connection point with Chemical Formula 1. Claim 41 In paragraph 40, the additional sensor is an infrared light sensor that is at least partially embedded in the semiconductor substrate, and the region different from the first near-infrared wavelength region is a near-infrared wavelength region different from the first near-infrared wavelength region, and the first photoelectric element and the infrared light sensor are superimposed in a direction perpendicular to the upper surface of the semiconductor substrate, an organic sensor. Claim 42 In claim 40, the additional sensor comprises a plurality of photodiodes at least partially embedded in the semiconductor substrate, wherein the plurality of photodiodes are configured to selectively absorb light in the visible light region, and the first photoelectric element and the plurality of photodiodes are superimposed in a direction perpendicular to the upper surface of the semiconductor substrate, an organic sensor. Claim 43 In paragraph 42, the organic sensor further comprises an additional photoelectric element disposed on the semiconductor substrate, wherein the additional photoelectric element is located between the first photoelectric element and the semiconductor substrate, and the additional photoelectric element is configured to selectively absorb light in a region other than the first near-infrared region and the visible light region. Claim 44 In claim 40, the additional sensor comprises at least one additional photoelectric element vertically stacked between the first photoelectric element and the semiconductor substrate, and each of the additional photoelectric elements comprises a photoelectric conversion layer and is configured to selectively absorb light in a wavelength region different from the first near-infrared wavelength region. Claim 45 In claim 40, the first photoelectric element comprises a first electrode and a second electrode facing each other; and an active layer located between the first electrode and the second electrode; wherein the active layer comprises the near-infrared absorbing material, an organic sensor. Claim 46 In claim 40, the first photoelectric element comprises a first electrode and a second electrode facing each other; an active layer located between the first electrode and the second electrode; and a charge auxiliary layer located between the first electrode and the active layer or between the second electrode and the active layer; wherein the charge auxiliary layer comprises the near-infrared absorbing material, an organic sensor. Claim 47 An electronic device comprising an organic sensor according to paragraph 39. Claim 48 An electronic device comprising a photoelectric element according to any one of paragraphs 18, 28 and 30 through 34.

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