Raman Spectroscopic Ellipsometry

Abstract

The present invention relates to a Raman ellipsometer that integrates a Raman measurement unit and an ellipsometer measurement unit on a single optical platform to simultaneously and precisely measure structural characteristics such as the thickness and refractive index of a device, as well as material characteristics such as chemical composition and crystal structure. Furthermore, the present invention can dramatically improve measurement accuracy and efficiency by accurately calculating the refractive index of a device using Raman measurement data to increase the accuracy of ellipsometer measurements, and by providing the structural and material properties of the device as a 3D map using a machine learning-based data fusion algorithm.

Description

Technology Field

[0001] The present invention relates to a Raman spectrometer integrating Raman spectroscopy and spectroscopic ellipsometry (SE). More specifically, it relates to an integrated optical measuring instrument capable of simultaneously measuring material properties (chemical composition, degree of crystallinity, etc.) and structural properties (thickness, refractive index, etc.) of a device in a single system, and an analysis method using the same. Background Technology

[0002] Recently, in advanced industrial fields such as semiconductor devices, displays, and secondary batteries, there has been a rapidly increasing need to precisely measure and analyze the structural and chemical properties of devices and materials to ensure product performance and reliability. In particular, as high integration at the sub-nanometer (nm) level progresses in semiconductor manufacturing processes, the importance of measurement technologies capable of simultaneously analyzing not only structural properties—such as thin film thickness and refractive index—but also material properties—such as chemical composition, crystallinity, and residual stress—is being further emphasized.

[0003] Conventionally, measurements were taken using a Spectroscopic Ellipsometer (SE), which measures optical structural characteristics such as the thickness and refractive index of a device, and a Raman Spectrometer, which provides information on the chemical composition and crystallinity of the device, as separate instruments.

[0004] Spectroscopic ellipsometers can provide structural characteristics such as thin film thickness and refractive index with high accuracy by irradiating a device with polarized light within a specific wavelength range and analyzing changes in the reflected polarization state; however, measurement errors may occur because they cannot directly measure physical properties such as the chemical composition and crystal structure of the material.

[0005] Meanwhile, although Raman spectrometers can provide information on the chemical composition and crystallinity of a device by irradiating the device surface with a monochromatic laser and spectrally analyzing the Raman scattered light based on internal molecular vibrations and crystal lattice (phonon) characteristics, they have the disadvantage of not being able to directly provide structural characteristics of the device, such as thickness or refractive index.

[0006] As such, existing technology requires structural and material properties to be measured separately using independent systems, which not only results in long measurement times and high operating costs, but also has the problem of reduced consistency between data due to the separate processing and fusion analysis of each measurement result.

[0007] Therefore, there is a need to develop new optical measurement systems and analysis technologies that can accurately measure structural and material properties simultaneously to enhance data convergence and measurement reliability, and significantly improve measurement efficiency.

[0008] The present invention aims to overcome the limitations and problems of the aforementioned prior art and to provide a Raman ellipsometer and an analysis method thereof that can simultaneously and accurately measure and analyze the material and structural characteristics of a device by configuring a Raman spectrometer and a spectroscopic ellipsometer into a single integrated system. Prior art literature

[0009] Korean Patent Publication No. 2025-0043174 (March 28, 2025) Korean Patent Publication No. 2025-0039804 (March 21, 2025) The problem to be solved

[0010] The present invention has been devised to solve the problems of the prior art as described above, and its main objective is to provide an integrated Raman ellipsometer and an analysis method using the same, which can simultaneously measure and analyze the structural characteristics (thickness and refractive index, etc.) and material characteristics (chemical composition and crystal structure, etc.) of a device with high precision by integrating Raman spectroscopy and spectroscopic ellipsometry (SE) within a single optical system.

[0011] In addition, another objective of the present invention is to provide a technology capable of supporting quality inspection and defect cause analysis of a device in real time by rapidly and accurately measuring the overall structure and material properties of the device through scanning measurement of the entire device area.

[0012] In addition, the present invention has an additional objective of providing an integrated optical measurement system and analysis technology that can improve the accuracy and reliability of data analysis and maximize the analysis efficiency of the microstructure and physical properties of a device by analyzing Raman spectroscopic data and ellipsometry data through a machine learning-based data fusion algorithm. means of solving the problem

[65535] A Raman ellipsometer according to one embodiment comprises a stage on which an element is placed, an ellipsometer measuring unit including a light source unit that irradiates light of a set wavelength onto the element and a receiver unit that receives light reflected from the element, a Raman measuring unit including a laser light source unit that irradiates a laser onto the element and a receiver unit that receives scattered light scattered from the element, and an analysis unit connected to each of the receiver units, which calculates the thickness of the element using the light reflected from the element and measures the material of the element using the scattered light; wherein the stage is movable in the XY direction to scan the entire front area of ​​the element, and the analysis unit provides the thickness and material properties of the element as a 3D map based on the scanned front data of the element, and the analysis unit inversely estimates the structure and material property parameters of the element through a machine learning-based data fusion algorithm based on the thickness and material property data obtained from the front of the element, and the machine learning-based data fusion algorithm clusters initial data and removes noise through unsupervised learning, and then map The device may be characterized by estimating the multilayer structure and material property parameters through supervised learning. The analysis unit may be characterized by analyzing the material of the device by comparing pre-stored reference data with computational data calculated using the scattered light received through the Raman measurement unit. The ellipsometer measurement unit may be characterized by including a polarizing unit that polarizes the light irradiated from the light source unit. The Raman measurement unit may be characterized by including a filter unit that filters a specific wavelength range through which the laser passes. The analysis unit may be characterized by calculating the refractive index of the device by comparing the reference data and the computational data, and calculating the thickness of the device by reflecting the calculated refractive index in the thickness calculation of the device.The above ellipsometer measurement unit and Raman measurement unit may include a temperature stabilization module for correcting wavelength fluctuations due to temperature changes. The above ellipsometer measurement unit and Raman measurement unit may be characterized by irradiating light and a laser to the element through a single common optical path and receiving light reflected or scattered light from the element. Effects of the invention

[0023] According to the present invention, the following technical effects can be expected.

[0024] First, by simultaneously implementing Raman spectroscopy and spectroscopic ellipsometry in a single integrated system, structural characteristics (thickness, refractive index, etc.) and material characteristics (chemical composition, crystallinity, etc.) of a device can be measured simultaneously with high precision. Accordingly, this resolves the data consistency issues that occurred when measuring separately using conventional individual equipment, and significantly improves the accuracy and reliability of device analysis.

[0025] Second, by performing two analyses simultaneously with a single system, measurement time can be significantly reduced, and maintenance costs, installation space, and facility operating costs incurred when using individual equipment can be substantially lowered.

[0026] Third, equipped with an XY scanning function for the entire surface of the device, it can provide the thickness and material properties of the device as a 3D map, enabling rapid diagnosis of quality abnormalities and real-time analysis of the causes of defects. This can directly contribute to improving production yield and reducing the defect rate.

[0027] Fourth, by analyzing Raman spectroscopic data and ellipsometric data through a machine learning-based data fusion algorithm, noise can be effectively removed during data analysis, and microstructure and material property information can be estimated with high accuracy. This has the effect of significantly improving the accuracy and efficiency of device characteristic analysis compared to existing analysis methods.

[0028] Through these effects, the present invention can be utilized as a core technology for device quality analysis and process control in advanced technology fields such as semiconductors, displays, and secondary batteries, and can also contribute to enhancing technological competitiveness and product reliability in the field in the long term. Brief explanation of the drawing

[0029] Figure 1 is a representative diagram showing the overall configuration of a Raman elliptical spectrometer according to an embodiment of the present invention. FIG. 2 is a diagram showing the detailed configuration of an ellipsoidal measuring unit according to the present invention. FIG. 3 is a diagram showing the detailed configuration of a Raman measuring unit according to the present invention. FIG. 4 is a diagram showing the detailed configuration of an analysis unit according to an embodiment of the present invention. Figure 5 illustrates the result after the operation of the map operation unit of the present invention. In FIG. 6, (a) is a diagram showing the optical path configuration of a Raman elliptical spectrometer according to one embodiment of the present invention, and 6(b) and 6(c) are diagrams showing the optical path configuration of a Raman elliptical spectrometer according to other embodiments of the present invention. Specific details for implementing the invention

[0030] Hereinafter, an embodiment of the present invention will be described in detail with reference to exemplary drawings. However, this is not intended to limit the scope of the present invention.

[0031] It should be noted that when assigning reference numerals to the components of each drawing, the same components are assigned the same reference numeral whenever possible, even if they are shown in different drawings. Furthermore, in describing the present invention, if it is determined that a detailed description of related known components or functions could obscure the essence of the invention, such detailed description is omitted.

[0032] In addition, the size or shape of the components depicted in the drawings may be exaggerated for clarity and convenience of explanation. Furthermore, terms specifically defined in consideration of the structure and operation of the present invention are intended only to describe embodiments of the present invention and do not limit the scope of the present invention. Hereinafter, the light generated from the device when a laser is irradiated onto the device will be referred to as Raman scattered light or scattered light.

[0033] FIG. 1 is a representative diagram showing the overall configuration of a Raman elliptical spectrometer according to an embodiment of the present invention, schematically illustrating an element (10) placed on a stage (100), an ellipsometry measurement unit (200) for measuring structural characteristics such as the thickness and refractive index of the element (10), a Raman measurement unit (300) for measuring material characteristics (chemical composition and crystal structure, etc.) of the element (10), and an analysis unit (400) for simultaneously analyzing the structure and physical properties of the element (10) by fusing data collected from the ellipsometry measurement unit (200) and the Raman measurement unit (300).

[0034] In conventional technology, ellipsometry and Raman spectroscopy have been operated as separate systems. This is because ellipsometry and Raman spectroscopy each require unique optical paths and components, making simultaneous integrated installation within a single system physically difficult, and resulting in complex optical alignment, maintenance, and high costs. Consequently, the conventional approach involved operating ellipsometry and Raman spectrometers individually to measure structural and material properties separately, followed by comparing and fusing the data during a separate analysis process. However, this method of operating individual equipment carries technical limitations, such as reduced data consistency and decreased analytical accuracy and efficiency.

[0035] To address the fundamental problems of the prior art, the present invention provides a Raman elliptical spectrometer capable of simultaneously measuring structural and material properties in a single device by integrating an ellipsometry measurement unit (200) and a Raman measurement unit (300) into a single optical platform and placing an element (10) on a common stage (100). This single-platform integrated configuration can fundamentally resolve spatial, cost, and maintenance issues that occurred with existing individual devices.

[0036] In particular, the ellipsometer measuring unit (200) can analyze structural characteristics such as the thickness and refractive index of the element (10) by irradiating light of a set wavelength onto the surface of the element (10) and detecting a change in the polarization state reflected from the surface of the element (10) (composed of a light source unit (210) and a receiver to be described later). However, since the material characteristics (chemical composition, crystal state, etc.) of the element (10) cannot be directly obtained using only the ellipsometer measuring unit (200), there was a limit to the accuracy of the calculation of the thickness and refractive index.

[0037] Meanwhile, the Raman measurement unit (300) can precisely analyze material properties such as the chemical composition and crystal structure of the device (10) by irradiating and analyzing a laser of a specific wavelength onto the device (10) (composed of a laser light source unit (310) and a receiver to be described later). In the present invention, the analysis data of the Raman measurement unit (300) is utilized together with the data of the ellipsometer measurement unit (200) to derive the accurate material properties of the device (10).

[0038] In particular, according to the present invention, the refractive index of the device (10) can be accurately calculated based on accurate material characteristic data of the device (10) analyzed through the Raman measurement unit (300). This is because, generally, the refractive index of a material is closely related to the chemical composition and crystal structure of the material. That is, when the material information of the device (10) is accurately obtained through the Raman measurement unit (300), the refractive index value can be accurately calculated based on this, and by reflecting the refractive index calculated in this precise manner in the thickness calculation process of the ellipsometer measurement unit (200), the accuracy of the thickness measurement of the device (10) can be dramatically improved.

[0039] Additionally, the analysis unit (400) is configured to process structural characteristic data and physical property data obtained from the ellipsometer measurement unit (200) and the Raman measurement unit (300) in an integrated manner through a machine learning-based data fusion algorithm, thereby enabling the simultaneous, rapid, and accurate analysis of the multilayer structure and physical property parameters of the device (10).

[0040] This integrated configuration of the present invention not only significantly reduces equipment installation space and maintenance costs compared to individual system operation, but also enables a dramatic increase in data consistency and analysis accuracy, and thus has technical significance that can innovatively contribute to quality control and process control of devices (10) in advanced industrial fields such as semiconductors, displays, and secondary batteries.

[0041] FIG. 2 is a diagram showing the detailed configuration of an ellipsometer measuring unit (200) according to the present invention, wherein the ellipsometer measuring unit (200) comprises a light source unit (210) that provides light of a set wavelength and a polarization unit (220) that modulates the light irradiated from the light source unit (210) into a specific polarization state.

[0042] The light source (210) may be composed of light that provides a continuous broadband spectrum in the visible light and near-infrared region (about 200 nm to 2500 nm), such as broadband white light or a halogen lamp. This broadband light is essential for analyzing the thin film structure and multilayer structure of the device (10) and enables accurate analysis of devices with various thicknesses and optical properties.

[0043] The polarization unit (220) includes a polarization filter or a modulation device for adjusting light irradiated from the light source unit (210) to a specific polarization state. More specifically, the polarization unit (220) may be configured to include a high-precision polarization device such as a rotating polarizer or a photoelastic modulator (PEM). By precisely modulating and adjusting the polarization state of the irradiated light source, such a polarization unit (220) enables accurate measurement and analysis of changes in the polarization state reflected from the surface of the device (10).

[0044] When the polarization state of light is precisely controlled through the polarization unit (220), when light irradiated onto the surface of the device (10) is reflected or transmitted within the surface and interior of the device, it exhibits a characteristic change in polarization state according to structural characteristics such as the thickness and refractive index of the device. Such a change in polarization state is precisely detected by the ellipsometer measurement unit (200) and transmitted to the analysis unit (400), thereby enabling the structural parameters such as the thickness and refractive index of the device to be calculated with high accuracy.

[0045] The ellipsometer measuring unit (200) may additionally include a temperature stabilization module capable of correcting wavelength fluctuations of light due to temperature changes in real time to ensure measurement accuracy. Since ellipsometer measurement technology relies heavily on the stability of the wavelength of light, measurement accuracy and reliability can be maximized by maintaining the wavelength of light constant through the temperature stabilization module.

[0046] FIG. 3 is a diagram showing the detailed configuration of a Raman measuring unit (300) according to the present invention, wherein the Raman measuring unit (300) comprises a laser light source unit (310) that provides a laser of a specific wavelength and a filter unit (320) that selectively filters only a specific wavelength range from the irradiated laser.

[0047] The laser light source (310) is mainly composed of a monochromatic laser (diode laser, Nd:YAG laser, etc.), and the commonly used wavelength range is 488 nm, 532 nm, 633 nm, 785 nm, etc. In particular, the 532 nm wavelength laser provides high Raman scattering signal intensity, making it excellent for analyzing organic-inorganic composite materials, and the 785 nm wavelength has the advantage of minimizing the influence of background fluorescence in materials with strong fluorescence signals. In the present invention, a laser wavelength suitable for the application can be selectively used or a plurality of wavelengths can be selectively configured so that optimal analysis is possible according to the material characteristics of the device (10).

[0048] A monochromatic laser irradiated from a laser light source (310) interacts with molecular vibrations and phonon motion on the surface and inside of the device (10) to generate Raman scattered light. The Raman scattered light generated at this time has a unique wavelength band (Stokes and anti-Stokes components) different from the irradiated laser, and this Raman scattered light is used to determine the chemical composition and crystal structure of the device.

[0049] The filter section (320) may be configured to include a notch filter or an edge filter that effectively removes strong Rayleigh scattered light of the same wavelength as the irradiated laser and selectively transmits only Raman scattered light. The high optical performance of the filter section (320) enables almost perfect blocking of Rayleigh scattered light and detection of very weak Raman signals with a high signal-to-noise ratio (SNR).

[0050] The Raman scattered light filtered in this way is finely spectrally analyzed and detected by wavelength through a spectrometer and a photodetector (CCD detector, etc.) within the Raman measurement unit (300), and provides accurate material characteristics (chemical composition, crystal state, etc.) of the device (10) to the analysis unit (400).

[0051] In particular, according to the present invention, by mutually fusing data from the ellipsometer measurement unit (200) and the Raman measurement unit (300), the refractive index value of the device (10) can be derived more precisely through accurate material data analyzed by the Raman measurement unit (300). This is because the refractive index is closely related to the chemical composition and crystal state of the material, and by utilizing the refractive index derived in this way in the thickness calculation process of the ellipsometer measurement unit (200), the accuracy of measuring the thickness of the device (10) can be significantly improved compared to conventional methods.

[0052] The Raman measurement unit (300) may additionally include a temperature stabilization module that corrects wavelength fluctuations of the laser due to temperature changes in real time to improve the wavelength stability of the light and the reliability of the measurement data. Since Raman spectroscopy is a technology that responds sensitively to wavelength fluctuations, the accuracy of data analysis can be ensured by maintaining the wavelength of the laser constant through the temperature stabilization module.

[0053] FIG. 4 is a diagram showing the detailed configuration of an analysis unit (400) according to an embodiment of the present invention. The analysis unit (400) according to the present invention is configured to accurately analyze the structural and material characteristics of a device (10) based on data received through an ellipsometer measurement unit (200) and a Raman measurement unit (300), and is configured to include a comparison operation unit (410), a refractive index operation unit (420), a thickness operation unit (430), and a map operation unit (440).

[0054] First, the comparison operation unit (410) analyzes impurities that may be present in the device (10) by comparing the operation data received from the Raman measurement unit (300) with the previously stored reference data. Here, the operation data is a Raman scattering spectrum obtained through the Raman measurement unit (300), which refers to data obtained by spectrally analyzing scattered light received at a specific location of the device (10). The previously stored reference data is a database created by pre-measuring the intrinsic Raman spectra of various impurities that may occur during the device manufacturing process. By comparing this reference data with the actually measured operation data, the comparison operation unit (410) can quickly and accurately determine whether or not impurities are present in the device (10).

[0055] In particular, since the impurity analysis using Raman spectroscopy has a unique Raman scattering peak for each substance, the comparison calculation unit (410) can precisely determine the type and presence of a specific impurity by comparing the presence and intensity of a peak corresponding to a specific wavelength in the calculation data with reference data.

[0056] The refractive index calculation unit (420) precisely calculates the refractive index of the surface and internal regions of the element (10) based on the material information of the element (10) confirmed through the comparison calculation unit (410). Generally, the refractive index of the element (10) varies significantly depending on the chemical composition and crystal state of its constituent material, and if the material information of the element is accurately confirmed through the Raman measurement unit (300), the refractive index can be calculated with very high reliability based on this. Therefore, the refractive index calculation unit (420) of the present invention plays a decisive role in improving the accuracy of subsequent thickness calculations by deriving and providing the refractive index value, which is the actual optical characteristic of the element, based on the accurate material data of the element (10).

[0057] The thickness calculation unit (430) calculates the thin film thickness of the element (10) based on data regarding the change in the polarization state of the reflected light of the element (10) measured through the ellipsometer measurement unit (200). The ellipsometer measurement method generally requires refractive index information of the element as a prerequisite, and the accuracy of the thin film thickness calculation depends greatly on the refractive index of the element. The thickness calculation unit (430) of the present invention can significantly increase the accuracy of thin film thickness measurement compared to the conventional simple ellipsometer measurement method by reflecting the actual refractive index value of the element (10) calculated in the refractive index calculation unit (420) in the calculation process.

[0058] Finally, the map operation unit (440) processes the structural characteristic data (thickness and refractive index, etc.) and material characteristic data (chemical composition and crystal state, etc.) collected for the entire area of ​​the device (10) using a machine learning-based data fusion algorithm.

[0059] Here, referring to FIG. 5, specifically looking at the map operation unit (440), the map operation unit (440) primarily uses an unsupervised learning algorithm during the data fusion process to cluster the initial data and effectively remove noise that may exist in the data. Through this, the reliability of the data used for analysis can be maximized.

[0060] Next, the map operation unit (440) performs a supervised learning algorithm based on the data refined through the unsupervised learning to accurately back-estimate the actual structure and physical property parameters of the device (10). In this process, the supervised learning algorithm supports the analysis of physical property parameters of complex forms, such as the multilayer structure of the device (10), with high accuracy by using a model that has learned reference values ​​of pre-prepared structure and physical property data.

[0061] Through this machine learning-based data fusion algorithm, the map operation unit (440) of the present invention provides thickness and physical property characteristic data for the entire area of ​​the device (10) as a precise 3D map (3D Mapping), thereby supporting intuitive and effective analysis of the quality status and cause of defects of the device.

[0062] Consequently, the analysis unit (400) of the present invention can fuse Raman and ellipsometry data to simultaneously provide information on the presence of impurities, refractive index, thin film thickness, and overall structural and physical properties of the device (10), and can innovatively improve data accuracy, analysis reliability, and analysis speed compared to existing individual measurement methods. This can be utilized as a highly effective means for quality control and process control of devices in advanced industrial processes such as semiconductor, display, and secondary battery manufacturing.

[0063] In FIG. 6, (a) is a diagram showing the optical path configuration of a Raman elliptical spectrometer according to one embodiment of the present invention, and 6(b) and 6(c) are diagrams showing the optical path configuration of a Raman elliptical spectrometer according to other embodiments of the present invention.

[0064] Before describing the invention according to FIG. 6(a), the arrangement relationship between the light source unit (210) and the laser light source unit (310) is mentioned, and it is preferable that the light source unit (210) be positioned lower than the laser light source unit (310).

[0065] The efficiency and reliability of the measurement results according to the operation of the light source unit (210) are most desirable when the result is incident at a high angle relative to the sample (e.g., an angle of incidence of about 70 degrees, or about 5 to 8 degrees plus or minus).

[0066] To this end, it may be considered that the light source unit (210) should be positioned above the laser light source unit (310), but this is because it is difficult to create a high angle of incidence when positioned above due to interference between the mechanisms (components such as the size of the head and the stage).

[0067] Therefore, it is preferable that the light source unit (210) be positioned below the laser light source unit (310) so that geometric degrees of freedom are secured. FIG. 6(a) is a diagram showing an optical path configuration including the light source unit (210) and the laser light source unit (310) of a Raman elliptical spectrometer according to an embodiment of the present invention. As shown in FIG. 6(a), the light source unit (210) and the laser light source unit (310) are positioned on the left side of the device to irradiate light (laser), and these lights travel to the right to form a 'V'-shaped optical path.

[0068] The light irradiated from the light source unit (210) is reflected by the a-reflector (351), then transmitted to the c-reflector (353), and is reflected again to be incident on the element. Meanwhile, the Raman scattered light formed by the laser irradiated from the laser light source unit (310) is reflected by the a-reflector (351), then reflected by the b-reflector (352), and incident on the element.

[0069] Subsequently, when examining the path of light reflected from the element, the laser light from the laser light source (310) is reflected through the e-reflection section (355) and then transmitted to the d-reflection section (354) to move to the detection path. The light irradiated from the light source (210) is reflected from the element, then reflected through the f-reflection section (356), and then reflected again from the d-reflection section (354) to move to the detection path in an aligned state. In this way, through the configuration of FIG. 6(a), the light irradiated from the light source (210) and the laser light source (310) can be simultaneously irradiated onto the element and efficiently collected through each reflection section to the detection path.

[0070] Meanwhile, when each receiver receives light from the light source unit (210) and the laser light source unit (310) respectively (i.e., when the receiver is configured with two units), since the laser transmitted and reflected from the laser light source unit (310) should not affect the light transmitted and reflected from the light source unit (210), it is preferable to place a filter that blocks the laser on the front side of the receiver receiving the light from the light source unit (210), or to space out each receiver so that only the light from the light source unit (210) is received, or to place each receiver at a certain angle of tilt.

[0071] FIG. 6(b) is a diagram showing the optical path of a Raman elliptical spectrometer according to another embodiment of the present invention.

[0072] FIG. 6(b) is basically the same as FIG. 6(a), but the laser irradiated from the laser light source (310) may be scattered in a vertical direction due to a scattering phenomenon after being incident on the element. More precisely, the laser irradiated by the laser light source (310) is scattered in multiple directions after being incident on the element, and it is preferable to understand that the movement of light shown in the drawing is detected by a detector that detects light (scattered light) that is scattered in a vertical direction of the element. In the case of FIG. 6(b), if the element is molecules, vertical detection of the laser may be possible as in FIG. 6(b).

[0073] FIG. 6(c) is a diagram showing the optical path of a Raman elliptical spectrometer according to another embodiment of the present invention.

[0074] According to another embodiment, the light source unit (210) and the laser light source unit (310) may be located at opposite positions.

[0075] According to another embodiment, the light source unit (210) and the laser light source unit (310) may be positioned in a mutually symmetrical position. That is, as shown in the drawing, the light source unit (210) may be positioned on the left and the laser light source unit (310) may be positioned on the right. Here, the light source unit (210) is reflected by the a-th reflection unit (351), then transmitted to the c-th reflection unit (353), and is reflected again to be incident on the element, and the laser light source unit (310) is reflected by the d-th reflection unit (354), then reflected to the e-th reflection unit (355), and then irradiated onto the element. Here, the laser of the laser light source unit (310) may be reflected vertically. Meanwhile, the light from the light source unit (210) may be reflected from the element, then reflected to the f-th reflection unit (356), and then reflected through the d-th reflection unit (354). And each light may be detected through a respective detector. Meanwhile, the b-reflective part (352), which is shown in the drawing but not utilized, may be deleted without issue.

[0076] In particular, as illustrated in Fig. 6, the ellipsoidal and Raman light sources are irradiated through a single common path, and the reflected or scattered light is also received through a receiver, thereby simplifying the structure of the system and significantly reducing the complexity of optical alignment during the data acquisition process. This results in the advantage of drastically reducing the installation area and maintenance costs of the equipment.

[0077] In addition, this configuration using a common optical path allows the ellipsometry and Raman measurement data to be transmitted to the analysis unit (400) with very high positional accuracy and data consistency, thereby significantly improving the data processing performance and accuracy of the refractive index calculation unit (420), thickness calculation unit (430), and map calculation unit (440) within the analysis unit (400).

[0078] Consequently, this single common optical path configuration of the present invention can maximize data consistency and analysis accuracy when simultaneously measuring structural characteristics (thickness and refractive index, etc.) and physical characteristics (chemical composition, crystal structure, etc.) of a device (10), and also provides a dramatically improved effect compared to existing independent systems in terms of measurement speed and efficiency. Therefore, the Raman elliptical spectrometer of the present invention can be utilized as an important means to simultaneously satisfy technical competitiveness and economic efficiency in fields such as semiconductor, display, and secondary battery manufacturing where high-precision device measurement is required.

[0079] Although the present invention has been illustrated and described in relation to specific embodiments, it will be obvious to those skilled in the art that the present invention can be modified and changed in various ways without departing from the technical spirit of the invention as provided by the following claims. Explanation of the symbols

[0080] 10 : Element 100: Stage 200 : Elliptical measuring unit 210 : Light source 220 : Polarization section 300 : Raman measurement unit 310 : Laser light source 320 : Filter section 350 : 1st reflection part 360 : Second reflection part 400 : Analysis Department 410 : Comparison operator 420 : Refractive index calculation unit 430 : Thickness calculation unit 440 : Map operation unit

Claims

Claim 1 A stage on which an element is placed; an ellipsoidal measuring unit comprising a light source unit that irradiates light of a set wavelength onto the element and a receiver unit that receives light reflected from the element; and a Raman measuring unit comprising a laser light source unit that irradiates a laser onto the element and a receiver unit that receives scattered light scattered from the element. A Raman elliptical spectrometer comprising an analysis unit connected to each of the above-mentioned receivers, which calculates the thickness of the device using light reflected from the device and measures the material of the device using scattered light, wherein the stage is movable in the XY direction to scan the entire front area of ​​the device, and the analysis unit provides the thickness and material properties of the device as a 3D map based on the scanned front data of the device, and the analysis unit inversely estimates the structure and material property parameters of the device through a machine learning-based data fusion algorithm based on the thickness and material property data obtained from the front of the device, and wherein the machine learning-based data fusion algorithm clusters initial data and removes noise through unsupervised learning, and then estimates the multilayer structure and material property parameters of the device through supervised learning. Claim 2 A Raman elliptical spectrometer according to claim 1, characterized in that the analysis unit analyzes the material of the element by comparing pre-stored reference data with computational data calculated through the scattered light received through the Raman measurement unit. Claim 3 A Raman elliptical spectrometer according to claim 1, wherein the ellipsometry measuring unit comprises a polarizing unit that polarizes light irradiated from the light source unit. Claim 4 A Raman elliptical spectrometer according to claim 1, wherein the Raman measuring unit includes a filter unit through which the laser passes to filter a specific wavelength range. Claim 5 A Raman elliptical spectrometer according to paragraph 2, wherein the analysis unit calculates the refractive index of the element by comparing the reference data and the calculation data, and calculates the thickness of the element by reflecting the calculated refractive index in the calculation of the thickness of the element. Claim 6 In claim 1, the ellipsometer measuring unit and the Raman measuring unit include a temperature stabilization module for correcting wavelength fluctuations due to temperature changes in a Raman ellipsometer. Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 A Raman ellipsometer according to claim 1, wherein the ellipsometer measuring unit and the Raman measuring unit irradiate light and a laser to the element through a single common optical path and receive light reflected or scattered from the element.

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