Transfer-free Direct Laser Patterning Method of 3D Porous Graphene Structures on a Flexible Substrate

Abstract

A direct laser patterning method for 3D porous graphene without transfer method according to an embodiment of the present invention comprises: a first step in which a lifting / lowering unit (20) moves in a downward direction to place a PI film (5) on the upper surface of a substrate (10); a second step in which the lifting / lowering unit (20) moves in an upward direction to return to a first reference point set in advance; a third step in which the PI film (5) placed in the first step is adhesively bonded to the upper surface of the substrate (10); a fourth step in which a controller (25) sets a reference pattern, irradiation conditions, and transfer conditions, respectively; a fifth step in which a horizontal moving unit (30) places a laser irradiation unit (35) on the upper surface of the PI film (5) placed in the third step; a sixth step in which the laser irradiation unit (35) moves by the horizontal moving unit (30) according to the reference pattern, irradiation conditions, and transfer conditions set in the fourth step, and irradiates a laser (L) on the upper surface of the PI film (5); and a method in which the laser (L) is irradiated in the sixth step. It is characterized by including a 7th step in which an LIG electrode (15) is formed in the area of ​​the laser and an 8th step in which the horizontal moving part (30) returns to a pre-set 2nd reference point when the laser irradiation part (35) is completed.

Description

Technology Field

[0001] The present invention relates to a direct laser patterning method for 3D porous graphene without transfer, and more specifically, to a direct laser patterning method for 3D porous graphene without transfer that can directly pattern an LIG electrode having a porous structure on the upper surface of a flexible substrate without a transfer process, thereby significantly reducing the manufacturing cost of the LIG electrode. Background Technology

[0002] The technology of patterning electrodes on flexible substrates is a key technology for manufacturing various electronic components such as flexible displays, batteries, foldable smartphones, and wearable devices.

[0003] Recently, a method of forming porous graphene, or laser-induced graphene (LIG) electrodes, by irradiating a polyimide (PI) film with a commercial CO2 laser has become known, and research is actively being conducted to use LIG electrodes as flexible electrodes.

[0004] Generally, the method for patterning LIG electrodes on a flexible substrate is as follows. First, a PI film is coated on the upper surface of a rigid substrate. Then, a laser is irradiated from the top of the PI film to form an LIG electrode. After that, the LIG electrode is transferred to the upper surface of a flexible polymer substrate.

[0005] However, in the method of patterning LIG electrodes on a flexible substrate by transferring LIG electrodes, there was a problem in that manufacturing costs increased as material costs, labor hours, and production time increased due to the occurrence of multiple additional processes.

[0006] In addition, in the method of patterning LIG electrodes on a flexible substrate by transferring LIG electrodes, there was a problem in that the adhesion at the LIG-substrate interface could be reduced due to mechanical stimulation occurring during the transfer process, and stability could be lowered as the LIG electrodes were deformed inside the substrate. Prior art literature

[0007] (Patent Document 0001) KR 10-1284535 B1(Patent Document 0002) KR 10-1221581 B1 The problem to be solved

[0008] The present invention was devised to solve the above-mentioned problems, and the objective of the present invention is to provide a direct laser patterning method for 3D porous graphene without transfer, which can directly pattern an LIG electrode having a porous structure on the upper surface of a flexible substrate without a transfer process, thereby drastically reducing the manufacturing cost of the LIG electrode.

[0009] In addition, the objective of the present invention is to provide a direct laser patterning method for 3D porous graphene without transfer, in which a PI film is placed on the upper surface of a flexible substrate and a laser is irradiated according to a pre-set reference pattern to directly form an LIG electrode inside the flexible substrate, thereby eliminating concerns such as reduced adhesion at the LIG-substrate interface and deformation of the LIG electrode that may occur during the transfer process, and significantly improving the stability of the LIG electrode.

[0010] In addition, the objective of the present invention is to provide a direct laser patterning method for 3D porous graphene without transfer, which allows for the production of a high-quality LIG electrode desired by the user by first setting the energy irradiated per unit area on the PI film according to the line width and thickness of the LIG electrode, and then secondarily setting the output and transfer speed of the laser according to the energy irradiated per unit area on the PI film. means of solving the problem

[0011] In order to solve the technical problems described above, a direct laser patterning method for 3D porous graphene without transfer method according to an embodiment of the present invention comprises: a first step in which a lifting / lowering unit (20) moves in a downward direction to place a PI film (5) on the upper surface of a substrate (10); a second step in which the lifting / lowering unit (20) moves in an upward direction to return to a first reference point set in advance; a third step in which the PI film (5) placed in the first step is adhesively bonded to the upper surface of the substrate (10); a fourth step in which a controller (25) sets a reference pattern, irradiation conditions, and transfer conditions, respectively; a fifth step in which a horizontal moving unit (30) places a laser irradiation unit (35) on the upper surface of the PI film (5) placed in the third step; a sixth step in which the laser irradiation unit (35) moves by the horizontal moving unit (30) according to the reference pattern, irradiation conditions, and transfer conditions set in the fourth step, and irradiates a laser (L) on the upper surface of the PI film (5). The method is characterized by including a 7th step in which an LIG electrode (15) is formed on the irradiated area where the laser (L) is irradiated in the 6th step, and an 8th step in which the horizontal moving part (30) returns to a pre-set 2nd reference point when the laser irradiation part (35) is completed.

[0012] In addition, in the first step above, the substrate (10) is formed of a flexible and partially cured thermosetting resin material, the partial curing is in the form of being cured into a semi-solid state, and the PI film (5) is formed of a polyimide material.

[0013] Additionally, the above 4th step comprises: a 4-1 step in which the controller (25) sets a reference pattern of the laser (L) irradiated by the laser irradiation unit (35); a 4-2 step in which the controller (25) sets the line width of the LIG electrode (15) according to the reference pattern set in the 4-1 step; a 4-3 step in which the controller (25) sets the depth of the LIG electrode (15) according to the reference pattern set in the 4-1 step; a 4-4 step in which the controller (25) sets the energy per unit area according to the line width of the LIG electrode (15) set in the 4-2 step and the depth of the LIG electrode (15) set in the 4-3 step; a 4-5 step in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) according to the energy per unit area set in the 4-4 step; and a horizontal step in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) according to the output of the laser (L) set in the 4-5 step. The method includes a 4-6 step for setting the displacement of a laser irradiation unit (35) transported by a moving unit (30) and a 4-7 step for a controller (25) to set the transport speed of a laser irradiation unit (35) transported by a horizontal moving unit (30) according to the output of a laser (L) set in the 4-5 step, wherein the line width of the LIG electrode (15) is perpendicular to the path when proceeding along the path of the reference pattern and is the width of a line segment included in the path, and the depth of the LIG electrode (15) is the length in the vertical direction of the LIG electrode (15).

[0014] In addition, the LIG electrode (15) is formed of a laser (L)-induced graphene material, and the LIG electrode (15) is formed when a laser (L) with energy per unit area is irradiated on the upper surface of the PI film (5) by the laser irradiation unit (35) such that the laser (L) has an energy per unit area greater than or equal to a preset reference energy, and the energy per unit area is the energy irradiated per unit area to the PI film (5) when a laser (L) is irradiated on the upper surface of the PI film (5) by the laser irradiation unit (35).

[0015] Additionally, the above 4-4 step includes a 4-4-1 step in which the controller (25) sets the energy per unit area to increase as the line width of the LIG electrode (15) set in the above 4-2 step increases, and a 4-4-2 step in which the controller (25) sets the energy per unit area to increase as the depth of the LIG electrode (15) set in the above 4-3 step increases; the above 4-5 step includes a 4-5-1 step in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) to increase as the energy per unit area set in the above 4-4 step increases, and the above 4-7 step includes a 4-7-1 step in which the controller (25) sets the transfer speed of the laser irradiation unit (35) transferred by the horizontal moving unit (30) to decrease as the output of the laser (L) set in the above 4-5 step increases. Effects of the invention

[0016] In the direct laser patterning method for 3D porous graphene without transfer method according to one embodiment of the present invention, an LIG electrode having a porous structure can be directly patterned on the upper surface of a flexible substrate without a transfer process, thereby having the effect of significantly reducing the manufacturing cost of the LIG electrode.

[0017] In addition, in the direct laser patterning method of 3D porous graphene without transfer method according to one embodiment of the present invention, a PI film is placed on the upper surface of a flexible substrate, and then a laser is irradiated according to a pre-set reference pattern to directly form an LIG electrode inside the flexible substrate, thereby eliminating concerns such as reduced adhesion at the LIG-substrate interface and deformation of the LIG electrode that may occur during the transfer process, and thus the stability of the LIG electrode is significantly improved.

[0018] In addition, in the direct laser patterning method for 3D porous graphene without transfer method according to one embodiment of the present invention, the energy irradiated per unit area on the PI film is set first according to the line width and thickness of the LIG electrode, and then the output and transfer speed of the laser can be set second according to the energy irradiated per unit area on the PI film, thereby having the effect of manufacturing a high-quality LIG electrode desired by the user. Brief explanation of the drawing

[0019] FIG. 1 is a flowchart of a direct laser patterning method for 3D porous graphene without transfer according to an embodiment of the present invention. Figure 2 is a diagram illustrating the process of attaching a PI film to the upper surface of a substrate. Figure 3 is a diagram illustrating the process of irradiating a laser onto the upper surface of a PI film. Figure 4 is a diagram illustrating the process of forming an LIG electrode. Figure 5a is a plan view showing the line width of an LIG electrode when the energy irradiated per unit area on a PI film is 1 J / mm². Figure 5b is a cross-sectional view showing the depth of the LIG electrode when the energy irradiated per unit area on the PI film is 1 J / mm2. Figure 5c is a plan view showing the depth of the LIG electrode when the energy irradiated per unit area on the PI film is 2 J / mm2. FIG. 5d is a cross-sectional view showing the depth of the LIG electrode when the energy irradiated per unit area on the PI film is 2 J / mm2. Figure 6 is a graph showing the change in linewidth of LIG according to the energy irradiated per unit area on a PI film. Figure 7 is a graph showing the change in depth of the LIG electrode according to the energy irradiated per unit area on the PI film. Specific details for implementing the invention

[0020] Hereinafter, in order to explain in detail enough for a person skilled in the art to easily implement the technical concept of the present invention, embodiments of the present invention will be described with reference to the attached drawings.

[0021] However, the following examples are merely illustrative to aid in understanding the present invention and do not reduce or limit the scope of the present invention.

[0022] Furthermore, the present invention may be implemented in various different forms and is not limited to the embodiments described herein.

[0023] FIG. 1 is a flowchart of a direct laser patterning method for 3D porous graphene without transfer method according to an embodiment of the present invention, FIG. 2 is a diagram for explaining the process of attaching a PI film (5) to the upper surface of a substrate (10), FIG. 3 is a diagram for explaining the process of irradiating a laser (L) onto the upper surface of a PI film (5), and FIG. 4 is a diagram for explaining the process of forming an LIG electrode (15).

[0024] Referring to FIGS. 1 to 4, a direct laser patterning method for 3D porous graphene without transfer according to an embodiment of the present invention is as follows.

[0025] First, the lifting / lowering unit (20) moves downward to place the PI film (5) on the upper surface of the substrate (10). (S100)

[0026] At this time, the lifting / lowering part (20) is positioned on the upper part of the substrate (10) and is formed to be movable in the up and down direction.

[0027] After that, the lifting / lowering unit (20) moves upward and returns to a pre-set first reference point (S200).

[0028] After that, the PI film (5) placed in step S100 is adhesively bonded to the upper surface of the substrate (10). (S300)

[0029] After that, the controller (25) sets the reference pattern, investigation conditions, and transfer conditions, respectively. (S400)

[0030] After that, the horizontal moving unit (30) places the laser irradiation unit (35) on the upper part of the PI film (5) placed in step S300. (S500)

[0031] At this time, the horizontal moving part (30) is provided on one side of the lower part of the lifting / lowering part (20) and is formed to be movable in horizontal directions, such as left / right and front / back directions, according to the transfer conditions set by the controller (25).

[0032] After that, the laser irradiation unit (35) moves by the horizontal movement unit (30) according to the reference pattern, irradiation conditions, and transport conditions set in step S400, and irradiates a laser (L) onto the upper surface of the PI film (5). (S600)

[0033] At this time, the laser irradiation unit (35) is provided at the lower part of the horizontal movement unit (30) and is formed to be movable by the horizontal movement unit (30) according to the reference pattern, irradiation conditions, and transport conditions set by the controller (25), so as to irradiate a laser (L) onto the upper part of the PI film (5).

[0034] After that, an LIG electrode (15) is formed on the irradiated area where the laser (L) was irradiated in step S600. (S700)

[0035] The horizontal movement unit (30) returns to a pre-set second reference point when the laser irradiation unit (35) completes irradiation. (S800)

[0036] At this time, in the above S100 step

[0037] The above substrate (10) is formed of a flexible and partially cured thermosetting resin material.

[0038] And, the above partial curing refers to a form cured into a semi-solid state.

[0039] And, the above substrate (10) is formed in the shape of a square plate and is formed in the left and right directions.

[0040] And, the above PI film (5) is formed from polyimide (PI) material.

[0041] And, the above PI film (5) is formed in the left and right directions in the shape of a square plate.

[0042] And, the vertical length of the PI film (5) is set to be smaller than the vertical length of the substrate (10).

[0043] Meanwhile, when a PI film (5) is placed on the upper surface of a partially cured substrate (10), the adhesion between the surfaces of the substrate (10) and the PI film (5) is sufficiently increased so that a laser (L) patterning process can be performed immediately.

[0044] Meanwhile, step S400, in which the controller (25) sets the reference pattern, investigation conditions, and transfer conditions respectively, is as follows.

[0045] First, the controller (25) sets a reference pattern of the laser (L) irradiated by the laser irradiation unit (35). (S401)

[0046] At this time, the above reference pattern refers to a reference for the pattern formed when a laser (L) is irradiated onto the upper surface of the PI film (5) by the laser irradiation unit (35).

[0047] In addition, the above reference pattern may include multiple paths for forming the above reference pattern.

[0048] In addition, the above path may include a straight path formed in a horizontal direction and a curved path formed in a curved shape.

[0049] After that, the controller (25) sets the line width of the LIG electrode (15) according to the reference pattern set in step S401 (S402).

[0050] At this time, the line width of the LIG electrode (15) refers to the width of a line segment that is perpendicular to the path and included in the path when proceeding along the path of the reference pattern.

[0051] After that, the controller (25) sets the depth of the LIG electrode (15) according to the reference pattern set in step S401. (S403)

[0052] At this time, the depth of the LIG electrode (15) refers to the length in the vertical direction of the LIG electrode (15).

[0053] After that, the controller (25) sets the energy per unit area according to the line width of the LIG electrode (15) set in step S402 and the depth of the LIG electrode (15) set in step S403. (S404)

[0054] After that, the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) according to the energy per unit area set in step S404. (S405)

[0055] After that, the controller (25) sets the displacement of the laser irradiation unit (35) that is transported by the horizontal moving unit (30) according to the output of the laser (L) set in step S405. (S406)

[0056] After that, the controller (25) sets the transfer speed of the laser irradiation unit (35) that is transferred by the horizontal moving unit (30) according to the output of the laser (L) set in step S405. (S407)

[0057] Here, the units of the feed rate and the output of the laser (L) are set to mm / s and watts (W), respectively.

[0058] Meanwhile, the above LIG electrode (15) is formed of a laser (L)-induced graphene material.

[0059] And, the laser (L)-induced graphene refers to a porous carbon nanomaterial produced by carbonization caused by high photothermal heat when a laser (L) is irradiated onto the upper surface of the PI film (5) by the laser irradiation unit (35).

[0060] And, the LIG electrode (15) is formed when the laser (L) is irradiated on the upper surface of the PI film (5) by the laser irradiation unit (35), and the energy per unit area is greater than or equal to a preset reference energy.

[0061] And, the energy per unit area above refers to the energy irradiated per unit area to the PI film (5) when a laser (L) is irradiated onto the upper surface of the PI film (5) by the laser irradiation unit (35).

[0062] And, the unit of energy per unit area is set to J / mm².

[0063] And, the energy per unit area above varies according to the standard pattern, irradiation conditions, and transport conditions set in.

[0064] Meanwhile, step S404, in which the controller (25) sets the energy per unit area according to the line width of the LIG electrode (15) set in step S402 and the depth of the LIG electrode (15) set in step S403, is as follows.

[0065] First, the controller (25) is set so that as the line width of the LIG electrode (15) set in step S402 increases, the energy per unit area increases. (S404-1)

[0066] After that, the controller (25) sets the energy per unit area to increase as the depth of the LIG electrode (15) set in step S403 increases. (S404-2)

[0067] Meanwhile, step S405, in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) according to the energy per unit area set in step S404, is as follows.

[0068] First, the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) to increase as the energy per unit area set in step S404 increases. (S405-1)

[0069] Meanwhile, step S407, in which the controller (25) sets the transfer speed of the laser irradiation unit (35) that is transferred by the horizontal moving unit (30) according to the output of the laser (L) set in step S405, is as follows.

[0070] First, the controller (25) sets the laser irradiation unit (35) that is transported by the horizontal moving unit (30) to decrease as the output of the laser (L) set in step S405 increases. (S407-1)

[0071] Meanwhile, the depth of the LIG electrode (15) can be varied according to the physical characteristics of the substrate (10).

[0072] At this time, the physical characteristics of the substrate (10) refer to the elastic modulus, strength, and thermal strain of the substrate (10).

[0073] Also, the depth of the LIG electrode (15) can be varied depending on the material of the substrate (10).

[0074] Specifically, the depth of the LIG electrode (15) can be varied according to the degree of curing of the substrate (10) when the substrate (10) is formed of PDMS material.

[0075] Here, PDMS (Polydimethylsiloxane) refers to an organosilicon compound, a transparent, low-toxicity thermosetting resin based on silicon.

[0076] And, the chemical formula of the above PDMS is set as H3[Si(CH3)2O]nOSi(CH3)3.

[0077] Meanwhile, the adhesion force between the substrate (10) and the LIG electrode (15) can be varied depending on the depth of the LIG electrode (15).

[0078] Specifically, the adhesion force between the substrate (10) and the LIG electrode (15) can be improved when adjusting the depth of the LIG electrode (15).

[0079] FIG. 5a is a plan view showing the line width of the LIG electrode (15) when the energy irradiated per unit area of ​​the PI film (5) is 1 J / mm2, FIG. 5b is a cross-sectional view showing the depth of the LIG electrode (15) when the energy irradiated per unit area of ​​the PI film (5) is 1 J / mm2, FIG. 5c is a plan view showing the depth of the LIG electrode (15) when the energy irradiated per unit area of ​​the PI film (5) is 2 J / mm2, and FIG. 5d is a cross-sectional view showing the depth of the LIG electrode (15) when the energy irradiated per unit area of ​​the PI film (5) is 2 J / mm2.

[0080] Referring to FIGS. 5a and 5c, it can be seen that when the energy irradiated per unit area of ​​the PI film (5) increases twofold from 1 J / mm2 to 2 J / mm2, the line width of the LIG electrode (15) also increases.

[0081] Referring to FIGS. 5b and 5d, it can be seen that when the energy irradiated per unit area of ​​the PI film (5) increases twofold from 1 J / mm2 to 2 J / mm2, the depth of the LIG electrode (15) also increases.

[0082] Figure 6 is a graph showing the change in line width of LIG according to the energy irradiated per unit area on the PI film (5).

[0083] Referring to FIG. 6, it can be seen that as the energy irradiated per unit area on the PI film (5) increases, the line width of the LIG electrode (15) gradually increases.

[0084] Figure 7 is a graph showing the change in depth of the LIG electrode (15) according to the energy irradiated per unit area on the PI film (5).

[0085] Referring to FIG. 7, it can be seen that as the energy irradiated per unit area on the PI film (5) increases, the depth of the LIG electrode (15) generally increases.

[0086] In the direct laser patterning method of 3D porous graphene without transfer method according to one embodiment of the present invention, an LIG electrode (15) having a porous structure can be directly patterned on the upper surface of a flexible substrate (10) without a transfer process, thereby having the effect of drastically reducing the manufacturing cost of the LIG electrode (15).

[0087] In addition, in the direct laser patterning method of 3D porous graphene without transfer method according to one embodiment of the present invention, after placing a PI film (5) on the upper surface of a flexible substrate (10), a laser (L) is irradiated according to a pre-set reference pattern to directly form an LIG electrode (15) inside the flexible substrate (10), so there is no concern about a decrease in adhesion strength at the LIG-substrate (10) interface and deformation of the LIG electrode (15) that may occur during the transfer process, and thus the stability of the LIG electrode (15) is significantly improved.

[0088] In addition, in the direct laser patterning method of 3D porous graphene without transfer method according to one embodiment of the present invention, the energy irradiated per unit area on the PI film (5) is set first according to the line width and thickness of the LIG electrode (15), and then the output and transfer speed of the laser (L) can be set second according to the energy irradiated per unit area on the PI film (5), thereby having the effect of manufacturing a high-quality LIG electrode (15) desired by the user.

[0089] As described above, the main technical concept of the present invention is to provide a direct laser patterning method for 3D porous graphene without transfer. The embodiment described above with reference to the drawings is merely one embodiment, and the true scope of the present invention is based on the patent claims, but extends to various equivalent embodiments that may exist. Explanation of the symbols

[0090] 1: Direct laser patterning method for transfer-free 3D porous graphene 5: PI film 10: Substrate 15: LIG electrode 20: Lifting / Lowering Unit 25: Controller 30: Horizontal movement unit 35: Laser Irradiation Unit L: Laser

Claims

Claim 1 A first step in which the lifting / lowering unit (20) moves downward to place a PI film (5) on the upper surface of a substrate (10); a second step in which the lifting / lowering unit (20) moves upward to return to a pre-set first reference point; a third step in which the PI film (5) placed in the first step is adhesively bonded to the upper surface of the substrate (10); a fourth step in which a controller (25) sets a reference pattern, irradiation conditions, and transfer conditions, respectively; a fifth step in which a horizontal moving unit (30) places a laser irradiation unit (35) on the upper surface of the PI film (5) placed in the third step; a sixth step in which the laser irradiation unit (35) moves by the horizontal moving unit (30) according to the reference pattern, irradiation conditions, and transfer conditions set in the fourth step, and irradiates a laser (L) on the upper surface of the PI film (5); and a seventh step in which an LIG electrode (15) is formed on the irradiated area where the laser (L) was irradiated in the sixth step. and includes an 8th step in which the horizontal moving unit (30) returns to a pre-set second reference point when the laser irradiation unit (35) completes irradiation; wherein in the 1st step, the substrate (10) is formed of a flexible and partially cured thermosetting resin material, and the partial curing is in the form of being cured into a semi-solid state, and the PI film (5) is formed of a polyimide material, and the 4th step is a 4-1 step in which the controller (25) sets a reference pattern of the laser (L) irradiated by the laser irradiation unit (35); a 4-2 step in which the controller (25) sets the line width of the LIG electrode (15) according to the reference pattern set in the 4-1 step; a 4-3 step in which the controller (25) sets the depth of the LIG electrode (15) according to the reference pattern set in the 4-1 step; and the controller (25) sets the line width of the LIG electrode (15) set in the 4-2 step and the Step 4-4, which sets the energy per unit area according to the depth of the LIG electrode (15) set in Step 4-3;Step 4-5, in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) according to the energy per unit area set in Step 4-4; Step 4-6, in which the controller (25) sets the displacement of the laser irradiation unit (35) transported by the horizontal movement unit (30) according to the output of the laser (L) set in Step 4-5; and a controller (25) sets the transfer speed of the laser irradiation unit (35) that is transported by the horizontal moving unit (30) according to the output of the laser (L) set in the 4th-5th step; the line width of the LIG electrode (15) is perpendicular to the path when proceeding along the path of the reference pattern and is the width of the line segment included in the path, the depth of the LIG electrode (15) is the length in the vertical direction of the LIG electrode (15), the LIG electrode (15) is formed of a laser (L)-induced graphene material, the LIG electrode (15) is formed when the laser (L) irradiates the upper surface of the PI film (5) by the laser irradiation unit (35) such that the energy per unit area is greater than or equal to a preset reference energy, and the energy per unit area is a unit of the PI film (5) when the laser (L) is irradiated on the upper surface of the PI film (5) by the laser irradiation unit (35). The energy irradiated per unit area is the energy irradiated per unit area, and the above 4-4 step includes: a 4-4-1 step in which the controller (25) sets the energy per unit area to increase as the line width of the LIG electrode (15) set in the above 4-2 step increases; and a 4-4-2 step in which the controller (25) sets the energy per unit area to increase as the depth of the LIG electrode (15) set in the above 4-3 step increases; and the above 4-5 step includes a 4-5-1 step in which the controller (25) sets the output of the laser (L) irradiated by the laser irradiation unit (35) to increase as the energy per unit area set in the above 4-4 step increases;A direct laser patterning method for 3D porous graphene without transfer, comprising: a step 4-7-1 in which the controller (25) sets the transfer speed of the laser irradiation unit (35) transported by the horizontal moving unit (30) to decrease as the output of the laser (L) set in step 4-5 increases; wherein the substrate (10) is formed in the left-right direction in the shape of a square plate, the PI film (5) is formed in the left-right direction in the shape of a square plate, the vertical length of the PI film (5) is set to be smaller than the vertical length of the substrate (10), and the path includes a straight path formed in the horizontal direction and a curved path formed in a curved shape. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete

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