Substrate processing apparatus inculding microwave scattering layer

Abstract

The present invention relates to a substrate processing apparatus comprising a microwave scattering layer. A substrate processing apparatus according to one embodiment of the present invention may include: a chamber having a processing space inside; a substrate support unit disposed in the processing space and supporting a substrate; a microwave unit for heating a substrate by supplying microwaves to the processing space; and a transparent member disposed between the microwave unit and the substrate support unit to scatter microwaves supplied from the microwave unit to the processing space.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus including a microwave scattering layer, and more specifically, to a substrate processing apparatus including a microwave scattering layer that can improve the temperature uniformity of the entire surface of a substrate by including the microwave scattering layer in a transparent member provided on the upper part of a chamber to allow microwaves to pass through, so that wavelengths generated by microwaves are scattered as they pass through the transparent member. Background Technology

[0003] Generally, semiconductor chips are manufactured through several stages of processes, such as a thin film deposition process on the surface of a substrate, an etching process, a cleaning process, and a drying process, and the substrate is placed under conditions most suitable for carrying out the above processes. For example, etching or deposition processes are carried out by physical or chemical methods, and the substrate may be heated to an appropriate temperature to activate the reaction between the substrate and the etching material or deposition material.

[0004] Among these, in a plasma-based substrate processing device, the method of raising the temperature of the substrate utilizes a heating means (heating wire) of the substrate support unit on which the substrate is placed. In the case of the conventional method of heating the substrate using a heater, it takes a long time to raise and lower the temperature, and it is difficult to heat the entire substrate uniformly.

[0005] To address this, a method is proposed to heat the substrate using microwaves from the top of the chamber. While this method reduces the heating time, it results in uneven heat transfer to the substrate, causing temperature differences across different regions during the process. This, in turn, leads to a decrease in semiconductor chip productivity.

[0006] Therefore, a new technology is required to ensure that heat generated by microwaves reaches the entire surface of the substrate uniformly. The problem to be solved

[0008] The present invention aims to solve the problems of the past and provides a substrate processing apparatus comprising a microwave scattering layer for improving the temperature uniformity of the entire surface of a substrate by scattering microwave wavelengths in a microwave-based apparatus.

[0009] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0011] A substrate processing device according to one embodiment of the present invention may include: a chamber having a processing space inside; a substrate support unit disposed in the processing space and supporting a substrate; a microwave unit for heating a substrate by supplying microwaves to the processing space; and a transparent member disposed between the microwave unit and the substrate support unit to scatter microwaves supplied from the microwave unit to the processing space.

[0012] In one embodiment, the transparent member comprises a transparent plate and a microwave scattering layer coated on the surface of the transparent plate, and the microwave scattering layer may include scattering particles for scattering microwaves.

[0013] In one embodiment, the transparent plate may be made of a material capable of transmitting the microwave wavelength.

[0014] In one embodiment, the microwave scattering layer may be a conductive layer.

[0015] In one embodiment, a high-frequency power source may be further included to generate plasma in the processing space by applying high-frequency power between the microwave scattering layer and the substrate support unit.

[0016] In one embodiment, an antenna member disposed on the upper portion of the transparent member may be further included, wherein the microwave scattering layer may be a non-conductive layer.

[0017] In one embodiment, the scattering particles may include any one of Al, TiO2, Al2O3, and ZnO.

[0018] In one embodiment, the microwave scattering layer can be formed by dispersing the scattering particles in any one of water, hexane, and toluene to form a scattering particle dispersion, and then coating the scattering particle dispersion onto the surface of the transparent plate.

[0019] In one embodiment, the scattering particle dispersion can be coated onto the transparent plate by any one of the following methods: doctor blade method, screen printing method, spray method, spin coating method, inkjet method, and dipping method. Effects of the invention

[0021] According to the present invention, by including a microwave scattering layer in a transparent member provided to allow microwaves to pass through the upper part of a chamber, the temperature uniformity of the front surface of the substrate can be improved.

[0022] In addition, as described above, by uniformly transferring heat to the front surface of the substrate, the problem of semiconductor chip defects can be improved and the product yield can be enhanced.

[0023] However, the effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the drawings below. Brief explanation of the drawing

[0025] FIG. 1 is a schematic cross-sectional view showing the configuration of a substrate processing device according to one embodiment of the present invention. FIG. 2 is an enlarged schematic side view of a transparent member comprising a scattering layer containing scattering particles according to one embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing the configuration of a substrate processing device according to another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing the configuration of a substrate processing device according to another embodiment of the present invention. Specific details for implementing the invention

[0026] Hereinafter, embodiments of the present invention are described in detail with reference to the attached drawings so that a person skilled in the art can easily implement the present invention. However, the present invention may be embodied in various other forms and is not limited to the embodiments described herein.

[0027] In describing embodiments of the present invention, if it is determined that a specific description of related known functions or configurations may unnecessarily obscure the essence of the present invention, such specific description is omitted, and parts having similar functions and operations are denoted by the same reference numerals throughout the drawings.

[0028] At least some of the terms used in the specification are defined with consideration of their functions in the present invention and may vary depending on the user's or operator's intent, convention, etc. Therefore, such terms should be interpreted based on the content throughout the specification.

[0029] Additionally, in this specification, the singular form includes the plural form unless specifically stated otherwise in the text. In this specification, when a component is described as including, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0030] Meanwhile, the size, shape, and line thickness of components in the drawings may be depicted somewhat exaggerated for ease of understanding.

[0031] Embodiments of the present invention are described with reference to schematic drawings of ideal embodiments of the present invention. Accordingly, variations from the shapes in the drawings, such as variations in manufacturing methods and / or tolerances, are fully foreseeable. Therefore, embodiments of the present invention are not described as being limited to specific shapes of the regions described in the drawings, but include variations in shape; the elements described in the drawings are entirely schematic, and their shapes are not intended to describe the exact shapes of the elements, nor are they intended to limit the scope of the present invention.

[0032] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing with reference to the attached drawings, identical or corresponding components are given the same reference number regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

[0034] In one embodiment of the present invention, the meaning of the word 'transparent' is that it has a high transmittance with respect to microwave wavelengths, and includes not only cases where the transmittance is 100% but also cases where the transmittance is high.

[0036] FIG. 1 is a schematic cross-sectional view showing the configuration of a substrate processing device according to one embodiment of the present invention.

[0037] Referring to FIG. 1, a substrate processing device (10) according to one embodiment of the present invention includes a chamber (100), a substrate support unit (200), a gas supply unit (300), a microwave unit (400), and a control unit (500).

[0038] The chamber (100) provides an internal space where a substrate processing process is performed. The substrate processing process may be performed in a vacuum atmosphere, and for this purpose, an exhaust port (102) is formed in the chamber (100). A vacuum pump (P) is connected to the exhaust port (102) through an exhaust line (104).

[0039] An opening (106) may be formed in the side wall of the chamber (100). The opening (106) functions as a passage for a substrate (W) to enter and exit the interior of the chamber (100). This opening (106) may be configured to be opened and closed by a door assembly (not shown). The door assembly (not shown) may be configured to include an outer door, an inner door, and a connecting plate. The outer door may be provided on the outer wall of the chamber (100). The inner door may be provided on the inner wall of the chamber (100). The outer door and the inner door may be fixedly connected to each other by a connecting plate. The connecting plate may be provided to extend from the interior to the exterior of the chamber (100) through the opening (106). A door actuator (not shown) may move the outer door in an up-and-down direction. The door actuator may be operated using, for example, a motor, a hydraulic or pneumatic cylinder, or a pneumatic cylinder.

[0040] A substrate support unit (200) for supporting a substrate (W) is provided inside the chamber (100). The substrate support unit (200) may be configured to include an electrostatic chuck (220) for adsorbing and fixing the substrate (W), and a base plate (210) for supporting the electrostatic chuck (220). The electrostatic chuck (220) and the base plate (210) may be bonded by a bonding layer (230), and the bonding layer (230) may be formed of silicone or the like.

[0041] The electrostatic chuck (220) may be made of a dielectric plate such as alumina and may be equipped with a chuck electrode (222) for generating an electrostatic force inside. When voltage is applied to the chuck electrode (222) by a power source (not shown), an electrostatic force is generated and the substrate (W) is adsorbed and fixed to the electrostatic chuck (220). The electrostatic chuck (220) may be equipped with a heater (224) for heating the substrate (W) to a predetermined temperature.

[0042] The base plate (210) is located at the bottom of the electrostatic chuck (220) and may be made of a metallic material such as aluminum. The base plate (210) has a refrigerant passage (212) formed therein through which a cooling fluid flows, and may function as a cooling means for cooling the electrostatic chuck (220). The refrigerant passage (212) may be provided as a circulation passage through which the cooling fluid circulates.

[0043] Additionally, the substrate support unit (200) may form a heat transfer gas channel (214) to supply heat transfer gas from a heat transfer gas source (216) to the back surface of the substrate (W). The heat transfer gas facilitates heat transfer between the substrate (W) and the base plate (210), thereby promoting the cooling of the substrate (W).

[0044] The substrate support unit (200) may include a ring member (240) surrounding the electrostatic chuck (220). The ring member (240) may concentrate plasma into the area where the substrate (W) is located and ensure that the plasma density is uniformly distributed over the entire area including the edge region of the substrate (W).

[0045] The gas supply unit (300) supplies gas necessary for substrate processing, etc. to the chamber (100). The gas supply unit (300) includes a distribution chamber (320) and a gas storage unit (340). Gas is supplied from the gas storage unit (340) to the distribution chamber (320) by controlling the gas supply valve (342), and can be supplied to the chamber (100) through the shower head (380). The gas supply valve (342) may include a flow control unit that controls the supply flow rate of the gas.

[0046] Although only one gas storage unit (340) and one gas supply valve (342) are shown in FIG. 1, the gas supply unit (340) of the present invention may include a plurality of gas storage units and a plurality of gas supply valves capable of independently controlling the supply of each gas so as to supply a plurality of gases to the chamber (100). The plurality of gases may include processing gases used in a substrate processing process, such as deposition gases and etching gases, and may include inert gases for purging, etc.

[0047] The shower head (380) may be a plate-shaped member having a plurality of gas supply holes (382) formed through it. The shower head (380) may be coupled to an upper cover (360) to form a distribution chamber (320). Gas supplied from the gas storage unit (340) to the distribution chamber (320) may be supplied to the internal space of the chamber (100) through the plurality of gas supply holes (382) of the shower head (380). A microwave unit (400) may be configured on the upper part of the shower head (380) to rapidly raise the temperature of the substrate (W). In this case, the shower head (380) may be made of a transparent material so that the microwave wavelength supplied from the microwave unit (400) passes through and is transmitted to the substrate (W).

[0048] An upper cover (360) may be provided on the upper part of the shower head (380). The upper cover (360) may be formed to cover the upper part of the chamber (100) to seal the internal space of the chamber (100). The upper cover (360) may be placed on the lower part of the microwave unit (400) and may be composed of a transparent member (362) containing a microwave scattering layer so that the wavelength supplied from the microwave unit (400) can reach the substrate (W) evenly. Hereinafter, the configuration of the transparent member (362) will be described with reference to FIG. 2.

[0050] FIG. 2 is an enlarged cross-sectional view of a transparent member according to an embodiment of the present invention. The transparent member (362) may include a transparent plate (362a) and a microwave scattering layer (362b) on its upper surface. The microwave scattering layer (362b) is a transparent layer in which scattering particles are dispersed, and as shown in FIG. 2, microwaves supplied from a microwave unit (400) pass through the microwave scattering layer (362b) and are scattered by the scattering particles, so that they can be provided more uniformly toward the substrate (W).

[0051] A scattering particle according to one embodiment of the present invention may be formed from any one of Al, TiO2, Al2O3, and ZnO. However, it is not limited to these, and any material capable of scattering microwave wavelengths may be used. Furthermore, the size of the scattering particle for scattering microwave wavelengths can range from nano (nm) to micro (μm) sizes. That is, depending on the wavelength of the microwave, the composition may include nano (nm) sized scattering particles for short wavelengths and micro (μm) sized scattering particles for long wavelengths.

[0052] In addition, although the shape of the scattering particles in FIG. 2 is depicted as circular, the present invention is not limited thereto. The scattering particles can be in the shape of a cylinder as well as in shapes with corners, such as squares, triangles, rectangular prisms, cubes, or pyramids.

[0053] The microwave scattering layer (362b) may be a conductive layer. For example, it may be a layer in which scattering particles are dispersed in a conductive material such as ITO (Tin-doped Indium Oxide) or FTO (Fluorine Tin Oxide). This conductive microwave scattering layer (362b) may serve as an upper electrode for plasma generation.

[0054] A microwave scattering layer (362b) containing such scattering particles can be formed by coating it on the upper surface of a transparent plate (362a). Specifically, a dispersion containing scattering particles can be prepared and coated on the surface of the transparent plate (362a). The dispersion may further include conductive particles such as ITO in addition to the scattering particles. The dispersion that disperses the scattering particles is not particularly limited and may be any one of water, hexane, and toluene. The dispersion containing such scattering particles can be applied to the surface of the transparent plate (362a) using any one of the following methods: doctor blade method, screen printing method, spray method, spin coating method, painting method, ink-jet method, and dipping method. At this time, the concentration of the dispersion containing scattering particles can be adjusted to control the distance of the scattering particles, but is not limited thereto. At least one scattering particle can be spaced apart by a distance greater than the radius of the scattering particle.

[0055] After coating with a dispersion containing scattering particles, a transparent member (362) can be obtained in which a microwave scattering layer (362b) containing scattering particles is coated on a transparent plate (362a) by vaporizing the dispersion using a drying process. This microwave scattering layer (362b) can be coated as a single layer or as a multilayer, and can be formed to have a thickness of several hundred nanometers (nm) to several hundred micrometers (μm). As an example, the transparent plate (362a) may include Al2O3 or quartz. Depending on the material constituting the transparent plate (362a), the wavelength of the microwave passing through the transparent member (362) may change.

[0056] In FIG. 2, the microwave scattering layer (362b) is shown coated on the front surface of the transparent plate (362a), but the present invention is not limited thereto and may be coated only on a part of the transparent plate (362a). Also, in FIG. 2, the microwave scattering layer (362b) is shown coated on the upper surface of the transparent plate (362a), but the present invention is not limited thereto. The microwave scattering layer (362b) may be coated on the lower surface of the transparent plate (362a).

[0058] Referring again to FIG. 1, a substrate processing device (10) according to one embodiment of the present invention may include a high-frequency power supply (410) and a matching device (412) configured to generate plasma in the internal space of a chamber (100). The high-frequency power supply (410) may supply high-frequency power to either the upper electrode or the lower electrode to generate a potential difference between the upper electrode and the lower electrode. The microwave scattering layer (362b) may be used as the upper electrode in the substrate processing device (10) by forming scattering particles in a conductive material such as ITO or FTO. The lower electrode may be a substrate support unit (200). The high-frequency power supply (410) may be connected to the lower electrode, and the upper electrode may be grounded. Although only one high-frequency power supply (410) is shown in FIG. 1, multiple high-frequency power supplies may be included to provide high-frequency power of different frequencies. Additionally, a high-frequency power supply or a DC power supply may be connected to the upper electrode as well.

[0059] The control unit (500) can control the overall operation of the substrate processing device (10), including the gas supply unit (300) and the microwave unit (400). The control unit (500) can control the microwave unit (400) to supply wavelengths to the processing space inside the chamber (100) while gas is supplied to the processing space inside the chamber (100). Additionally, the control unit (500) can set the timing, sequence, and supply amount of each gas for injecting gas into the chamber (100).

[0061] FIG. 3 is a schematic cross-sectional view showing the configuration of a substrate processing device according to another embodiment of the present invention. The substrate processing device (10) of FIG. 3 differs from the substrate processing device of FIG. 1 only in the plasma generation method.

[0062] Referring to FIG. 3, an antenna member (364) including an antenna unit (366) may be disposed on the upper part of a transparent member (362). At this time, the antenna unit (366) can generate a magnetic field and an electric field inside the chamber (100) based on power supplied from an upper power source (not shown) to excite the gas flowing into the chamber (100) through the shower head (380) into plasma.

[0063] The antenna unit (366) is equipped with a coil provided to form a closed loop, for example, a coil antenna unit (366) in the form of a planar spiral can be placed on the transparent member (362).

[0064] The antenna member (364) may also be provided with a transparent material so that microwaves generated from the microwave unit (400) can pass through. For example, the antenna unit (366) may be embedded within a transparent ceramic material.

[0065] Microwaves generated from the microwave unit (400) may be interfered with by the antenna unit (366) while passing through the antenna member (364), making it difficult to heat the substrate (W) uniformly. However, in an embodiment of the present invention, as the microwaves pass through the transparent member (362) positioned below the antenna member (364) and are scattered by the microwave scattering layer (362b), more uniform microwaves can be supplied to each area of ​​the upper surface of the substrate (W).

[0066] In this embodiment, the microwave scattering layer (362b) may be non-conductive. Although not limited to, it may be provided in a form in which scattering particles are dispersed within a non-conductive material, such as a non-conductive ceramic or a non-conductive resin.

[0068] FIG. 4 is a schematic cross-sectional view showing the configuration of a substrate processing device according to another embodiment of the present invention. Unlike the substrate processing devices of FIG. 1 and FIG. 3, the substrate processing device of FIG. 4 shows the configuration of a substrate processing device (10) that performs a substrate heat treatment process using microwaves without using plasma, and differs from the substrate processing device of FIG. 1 only in that it does not include a high-frequency power source.

[0069] Additionally, referring to FIG. 4, the gas supplied from the gas supply unit (300) can be supplied to the processing space of the chamber (100) via a shower head not shown and evenly sprayed onto the substrate (W). However, the present invention is not limited thereto. For example, the gas supplied from the gas supply unit (300) may be supplied directly to the processing space through a gas inlet not shown of the chamber (100).

[0070] In the embodiment of FIG. 4, the transparent member (362) may include a microwave scattering layer (362a). As the microwave generated from the microwave unit (400) passes through the transparent member (362), it is scattered by the microwave scattering layer (362a), thereby allowing the substrate (W) to be heated more uniformly.

[0071] As with the embodiment of FIG. 3, the microwave scattering layer (362b) in the embodiment of FIG. 4 may also be non-conductive. Although not limited to, it may be provided in a form in which scattering particles are dispersed within a non-conductive material, such as a non-conductive ceramic or a non-conductive resin.

[0073] The foregoing description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments described in the present invention are intended to explain, not limit, the technical concept of the present invention, and the technical concept of the present invention is not limited by such embodiments. The scope of protection of the present invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention. Explanation of the symbols

[0075] W : Substrate 100 : Chamber 200 : Substrate support unit 300: Gas supply unit 400 : Microwave unit 500 : Control unit

Claims

Claim 1 A substrate processing apparatus comprising: a chamber having a processing space inside; a substrate support unit disposed in the processing space and supporting a substrate; a microwave unit for heating a substrate by supplying microwaves to the processing space; and a transparent member disposed between the microwave unit and the substrate support unit for scattering microwaves supplied from the microwave unit to the processing space; wherein the transparent member comprises a transparent plate and a microwave scattering layer coated on the surface of the transparent plate, and the microwave scattering layer is a conductive layer comprising scattering particles for scattering microwaves. Claim 2 delete Claim 3 A substrate processing apparatus according to claim 1, wherein the transparent plate is made of a material capable of transmitting the microwave wavelength. Claim 4 delete Claim 5 A substrate processing apparatus according to claim 1, further comprising a high-frequency power source for generating plasma in the processing space by applying high-frequency power between the microwave scattering layer and the substrate support unit. Claim 6 A substrate processing apparatus according to claim 1, further comprising an antenna member disposed on the upper portion of the transparent member. Claim 7 delete Claim 8 A substrate processing apparatus comprising: a chamber having a processing space inside; a substrate support unit disposed in the processing space and supporting a substrate; a microwave unit for heating a substrate by supplying microwaves to the processing space; and a transparent member disposed between the microwave unit and the substrate support unit for scattering microwaves supplied from the microwave unit to the processing space; wherein the transparent member comprises a transparent plate and a microwave scattering layer coated on the surface of the transparent plate, the microwave scattering layer comprises scattering particles for scattering microwaves, and the scattering particles comprise any one of Al, TiO2, Al2O3, and ZnO. Claim 9 A substrate processing apparatus comprising: a chamber having a processing space inside; a substrate support unit disposed in the processing space and supporting a substrate; a microwave unit for heating a substrate by supplying microwaves to the processing space; and a transparent member disposed between the microwave unit and the substrate support unit to scatter microwaves supplied from the microwave unit to the processing space; wherein the transparent member comprises a transparent plate and a microwave scattering layer coated on the surface of the transparent plate, and the microwave scattering layer comprises scattering particles for scattering microwaves, and wherein the microwave scattering layer is formed by dispersing the scattering particles in any one of water, hexane, and toluene to form a scattering particle dispersion, and then coating the scattering particle dispersion on the surface of the transparent plate. Claim 10 A substrate processing apparatus according to claim 9, characterized in that the scattering particle dispersion is coated onto the transparent plate by any one of the doctor blade method, screen printing method, spray method, spin coating method, inkjet method, and dipping method.

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