Substrate support, plasma processing apparatus, and ring replacement method

Abstract

[Problem] To make the two types of rings provided in the substrate support interchangeable with a common lifter. [Solution] A substrate mounting portion; a first ring arranged to surround the substrate mounting portion; a second ring arranged to surround the first ring and not overlap with the first ring when viewed in a plane; a third ring arranged below the first ring and the second ring such that its inner portion overlaps with the first ring when viewed in a plane and its outer portion overlaps with the second ring when viewed in a plane, and the third ring has a hole in its inner portion; a first engaging portion protruding upward from the hole of the third ring and engaging with the first ring; a second engaging portion located below the first engaging portion and engaging with the third ring; and an actuator for raising and lowering the lifter.

Description

Technology Field

[0001] The present disclosure relates to a substrate support, a plasma processing apparatus, and a method for exchanging a ring. Background Technology

[0002] A mounting base for a plasma processing device disclosed in Patent Document 1 comprises a wafer mounting surface, a ring mounting surface, a lifter pin, and a driving mechanism. The wafer mounting surface mounts a wafer. The ring mounting surface mounts a first ring having a first engaging portion and a second ring having a second engaging portion that engages with the first engaging portion and has a through hole reaching the lower surface of the first engaging portion. Additionally, the ring mounting surface has a hole at a position corresponding to the through hole and is provided on the outer circumference side of the wafer mounting surface. The lifter pin has a first retaining portion that is fitted into the through hole and a second retaining portion that is connected in the axial direction of the first retaining portion and has a protrusion that protrudes from the outer circumference of the first retaining portion. The lifter pin is received within the hole of the ring mounting surface with the first retaining portion facing the ring mounting surface. The driving mechanism drives the lifter pin to be vertically movable. Prior art literature

[0003] Japanese Patent Publication No. 2020-113603 The problem to be solved

[0004] The technology according to the present disclosure enables two types of rings provided by a substrate support to be exchanged with a common lifter. means of solving the problem

[0005] One aspect of the present disclosure comprises a substrate mounting portion, a first ring arranged to surround the substrate mounting portion, a second ring arranged to surround the first ring and not overlap with the first ring when viewed in a plane, a third ring arranged below the first ring and the second ring such that its inner portion overlaps with the first ring when viewed in a plane and its outer portion overlaps with the second ring when viewed in a plane, and the third ring having a hole in its inner portion, a first engaging portion protruding upward from the hole of the third ring and engaging with the first ring, and a second engaging portion located below the first engaging portion and engaging with the third ring, and an actuator for raising and lowering the lifter. Effects of the invention

[0006] According to the present disclosure, two types of rings provided by a substrate support can be exchanged with a common lifter. Brief explanation of the drawing

[0007] FIG. 1 is a plan view illustrating a schematic configuration of a plasma processing system having a plasma processing device according to the present embodiment. Figure 2 is a cross-sectional view illustrating a schematic configuration of the processing module. Figure 3 is a partial enlarged view of Figure 2. Figure 4 is an enlarged cross-sectional view of a part different from Figure 2 along the circumferential direction of the wafer support. Figure 5 is a drawing illustrating the state around the wafer support during the mounting process of both the edge ring and the outer ring. Figure 6 is a drawing illustrating the state around the wafer support during the mounting process of both the edge ring and the outer ring. Figure 7 is a drawing illustrating the state around the wafer support during the mounting process of both the edge ring and the outer ring. Figure 8 is a drawing illustrating the state around the wafer support during the mounting process of the edge ring alone. FIG. 9 is a drawing illustrating the state around the wafer support during the removal process of the outer ring with the edge ring removed. Figure 10 is a drawing illustrating another example of an outer ring and a return ring. FIG. 11 is a drawing illustrating another example of the positioning form of the outer ring and the return ring. Specific details for implementing the invention

[0008] In the manufacturing process of semiconductor devices, etc., plasma treatment such as etching is performed on a substrate, such as a semiconductor wafer (hereinafter referred to as "wafer"), using plasma. Plasma treatment is performed while the substrate is mounted on a substrate support inside a depressurized processing vessel.

[0009] This substrate support is equipped with a consumable member that requires periodic replacement, in addition to a substrate mounting portion on which a substrate is mounted. The consumable member includes, for example, an edge ring positioned adjacent to the substrate on the substrate mounting portion. The edge ring requires replacement because it is etched by exposure to plasma. The replacement of the edge ring is carried out, for example, using a lifter that moves up and down while supporting the edge ring and a conveying device that conveys the edge ring.

[0010] However, in addition to the edge ring, the substrate support may also be provided with another ring positioned to cover the outer side of the edge ring. Since this other ring is also etched by exposure to plasma, there is a need to replace it periodically, that is, to treat it as a consumable part.

[0011] However, if a lifter for replacing the edge ring and a lifter for replacing the other ring are provided separately, the cost increases.

[0012] Therefore, the technology according to the present disclosure enables the exchange of two types of rings provided by a substrate support with a common lifter.

[0013] Hereinafter, a substrate support, a plasma processing apparatus, and a method for exchanging the ring of the substrate support according to the present embodiment will be described with reference to the drawings. In addition, in this specification and drawings, redundant descriptions are omitted for elements having substantially the same functional configuration by assigning the same reference numerals.

[0014] Plasma Treatment System

[0015] FIG. 1 is a plan view illustrating a schematic configuration of a plasma processing system having a plasma processing device according to the present embodiment.

[0016] In the plasma treatment system (1) of Fig. 1, plasma treatment such as etching is performed, for example, on a wafer (W) as a substrate using plasma.

[0017] A plasma processing system (1) has an atmosphere section (10) and a pressure reduction section (11), and these atmosphere section (10) and pressure reduction section (11) are integrally connected via load lock modules (20, 21). The atmosphere section (10) is equipped with an atmosphere module that performs a desired processing on a wafer (W) under an atmospheric pressure atmosphere. The pressure reduction section (11) is equipped with a processing module (60) that performs a desired processing on a wafer (W) under a pressure reduction atmosphere (vacuum atmosphere).

[0018] The load lock module (20, 21) is configured to connect the loader module (30) included in the atmosphere section (10) and the transfer module (50) included in the pressure reduction section (11) via a gate valve (not shown). The load lock module (20, 21) is configured to temporarily hold the wafer (W). Additionally, the load lock module (20, 21) is configured to switch its interior between an atmospheric pressure atmosphere and a pressure reduction atmosphere.

[0019] The standby unit (10) has a loader module (30) equipped with a conveying device (40) described later, and a load port (32) for mounting a FOUP (31). The FOUP (31) is capable of storing multiple wafers (W). Additionally, the loader module (30) may be connected to an orienter module (not shown) for adjusting the horizontal orientation of the wafer (W), a buffer module (not shown) for temporarily storing multiple wafers (W), etc.

[0020] The loader module (30) has a rectangular housing, and the interior of the housing is maintained at an atmospheric pressure. On one side constituting the long side of the housing of the loader module (30), a plurality of, for example, five, load ports (32) are installed. On the other side constituting the long side of the housing of the loader module (30), a load lock module (20, 21) is installed.

[0021] Inside the housing of the loader module (30), a conveying device (40) configured to convey a wafer (W) is provided. The conveying device (40) has a conveying arm (41) that supports the wafer (W) when conveying it, a rotating base (42) that rotatably supports the conveying arm (41), and a base (43) on which the rotating base (42) is mounted. Additionally, inside the loader module (30), a guide rail (44) extending in the longitudinal direction of the loader module (30) is provided. The base (43) is provided on the guide rail (44), and the conveying device (40) is configured to move along the guide rail (44).

[0022] The depressurization unit (11) has a transfer module (50), a processing module (60) as a plasma processing device, and a storage module (61) as a storage unit. The interiors of the transfer module (50) and the processing module (60) (specifically, the interiors of the depressurization transport chamber (51) and the plasma processing chamber (100) described later) are each maintained in a depressurization atmosphere, and the interior of the storage module (61) is also maintained in a depressurization atmosphere. For one transfer module (50), the processing module (60) is provided in multiples, for example, six, and the storage module (61) is also provided in multiples, for example, two. Furthermore, the number and arrangement of the processing module (60) are not limited to the present embodiment and can be arbitrarily set, and it is sufficient to provide at least one processing module equipped with a wafer support described later. Furthermore, the number and arrangement of the storage module (61) are not limited to the present embodiment and can be arbitrarily set, for example, at least one is provided.

[0023] The transfer module (50) is configured to transport a wafer (W). Additionally, the transfer module (50) is configured to transport an edge ring (E), an outer ring (D), and a transport ring (T), which will be described later.

[0024] This transfer module (50) includes a pressure-reducing transport chamber (51) having a housing that is polygonal in shape when viewed in a planar view (in the illustrated example, a rectangular shape when viewed in a planar view), and the pressure-reducing transport chamber (51) is connected to the load lock module (20, 21).

[0025] The transfer module (50) transfers the wafer (W) brought into the load lock module (20) to a processing module (60), and at the same time, the wafer (W) on which the desired plasma processing has been performed in the processing module (60) is transferred to the waiting section (10) via the load lock module (21).

[0026] Additionally, the transfer module (50) may transfer the edge ring (E), outer ring (D), and return ring (T) within the storage module (61) together to a processing module (60), and at the same time, transfer the edge ring (E), outer ring (D), and return ring (T) within the processing module (60) together to the storage module (61).

[0027] Additionally, the transfer module (50) may transfer the edge ring (E) in the storage module (61) to a processing module (60) alone, and at the same time, transfer the edge ring (E) in the processing module (60) to the storage module (61) alone.

[0028] Additionally, the transfer module (50) may transfer the outer ring (D) and the return ring (T) within the storage module (61) together to a processing module (60), and at the same time, transfer the outer ring (D) and the return ring (T) within the processing module (60) together to the storage module (61).

[0029] The processing module (60) performs a desired plasma treatment, such as etching, on the wafer (W) returned from the transfer module (50). Additionally, the processing module (60) is connected to the transfer module (50) via a gate valve (62). Furthermore, the specific configuration of this processing module (60) will be described later.

[0030] The storage module (61) stores the edge ring (E), the outer ring (D), and the return ring (T). The edge ring (E) is stored alone within the storage module (61), or is stored while supported by the return ring (T) that supports the outer ring (D). Additionally, the outer ring (D) is stored while supported by the return ring (T). The return ring (T) is stored while supporting only the outer ring (D), or while supporting both the outer ring (D) and the edge ring (E). The specific configuration of the return ring (T) will be described later.

[0031] Additionally, the storage module (61) is connected to the transfer module (50) via the gate valve (63).

[0032] A transfer device (70) is provided inside the pressure-reducing transfer chamber (51) of the transfer module (50). The transfer device (70) is configured to support and transfer a wafer (W). Additionally, the transfer device (70) is configured to support and transfer a transfer ring (T) in a state where the edge ring (E) and the outer ring (D) are supported, and in a state where only the outer ring (D) is supported. Additionally, the transfer device (70) is configured to support and transfer the edge ring (E) alone.

[0033] This transfer device (70) has a transfer arm (71) that holds the wafer (W), the transfer ring (T) and the edge ring (E) in the state described above when transferring them, a rotating base (72) that rotatably supports the transfer arm (71), and a base (73) on which the rotating base (72) is mounted. Additionally, a guide rail (74) extending in the longitudinal direction of the transfer module (50) is provided inside the pressure transfer chamber (51) of the transfer module (50). The base (73) is provided on the guide rail (74), and the transfer device (70) is configured to be movable along the guide rail (74).

[0034] In the transfer module (50), the wafer (W) held in the load lock module (20) is received by the return arm (71) and brought into the processing module (60). Additionally, the wafer (W) held in the processing module (60) is received by the return arm (71) and transferred to the load lock module (21).

[0035] Additionally, in the transfer module (50), the return arm (71) receives the return ring (T) in a state where the edge ring (E) and the outer ring (D) are supported, the return ring (T) in a state where only the outer ring (D) is supported, or the edge ring (E) in a state within the storage module (61), and brings it into the processing module (60). Additionally, in the processing module (60), the return arm (71) receives the return ring (T) in a state where the edge ring (E) and the outer ring (D) are supported, the return ring (T) in a state where only the outer ring (D) is supported, or the edge ring (E) in a state within the processing module (60), and takes it out to the storage module (61).

[0036] Additionally, the plasma processing system (1) has a control device (80). In one embodiment, the control device (80) processes computer-executable instructions that cause the plasma processing system (1) to execute various processes described in this disclosure. The control device (80) may be configured to control each of the other elements of the plasma processing system (1) to execute the various processes described herein. In one embodiment, part or all of the control device (80) may be included in the other elements of the plasma processing system (1). The control device (80) may include, for example, a computer (90). The computer (90) may include, for example, a central processing unit (CPU) (91), a memory unit (92), and a communication interface (93). The processing unit (91) may be configured to execute various control operations based on a program stored in the memory unit (92). The memory unit (92) may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface (93) may communicate with other elements of the plasma processing system (1) via a communication line such as a LAN (Local Area Network).

[0037] <Wafer processing of plasma processing system (1)>

[0038] Next, wafer processing performed using the plasma processing system (1) configured as described above will be explained.

[0039] First, a wafer (W) is removed from the desired FOUP (31) by the return device (40) and brought into the load lock module (20). Then, the inside of the load lock module (20) is sealed and depressurized. After that, the inside of the load lock module (20) and the inside of the transfer module (50) are connected.

[0040] Next, the wafer (W) is held by the return device (70) and returned from the load lock module (20) to the transfer module (50).

[0041] Next, the gate valve (62) is opened, and the wafer (W) is introduced into the desired processing module (60) by the transport device (70). After that, the gate valve (62) is closed, and the desired processing is performed on the wafer (W) in the processing module (60). Furthermore, the processing performed on the wafer (W) in this processing module (60) will be described later.

[0042] Next, the gate valve (62) is opened, and the wafer (W) is removed from the processing module (60) by the return device (70). After that, the gate valve (62) is closed.

[0043] Next, a wafer (W) is brought into the load lock module (21) by the conveying device (70). When the wafer (W) is brought into the load lock module (21), the inside of the load lock module (21) is sealed and then opened to the atmosphere. After that, the inside of the load lock module (21) and the inside of the loader module (30) are connected.

[0044] Next, the wafer (W) is held by the return device (40), returned from the load lock module (21) through the loader module (30) to the desired FOUP (31), and received. With this, a series of wafer processing in the plasma processing system (1) is completed.

[0045] <Processing Module (60)>

[0046] Next, the processing module (60) will be described using FIGS. 2 and FIGS. 3. FIGS. 2 is a cross-sectional view illustrating a schematic configuration of the processing module (60). FIGS. 3 is a partial enlarged view of FIGS. 2. FIGS. 4 is an enlarged cross-sectional view of a portion different from FIGS. 2 along the circumferential direction of the wafer support (101) described later.

[0047] As illustrated in FIG. 2, the processing module (60) includes a plasma processing chamber (100) as a processing vessel, a gas supply unit (130), an RF (Radio Frequency) power supply unit (140), and an exhaust system (150). Additionally, the processing module (60) also includes a gas supply unit (125) (see FIG. 4). Furthermore, the processing module (60) includes a wafer support (101) as a substrate support and an upper electrode (102).

[0048] A wafer support (101) is positioned in the lower region of a plasma processing space (100s) within a plasma processing chamber (100) configured to allow for pressure reduction. An upper electrode (102) is positioned above the wafer support (101) and can function as part of the ceiling of the plasma processing chamber (100).

[0049] A wafer support (101) is configured to support a wafer (W) in a plasma processing space (100s). In one embodiment, the wafer support (101) includes a lower electrode (103), an electrostatic chuck (104), a support (105), an insulator (106), a lifter (107), a lifter (108), an edge ring (E), an outer ring (D), and a return ring (T).

[0050] The lower electrode (103) is formed of a conductive material, such as aluminum. In one embodiment, a flow path (109) for a temperature control fluid is formed inside the lower electrode (103). A temperature control fluid is supplied to the flow path (109) from a chiller unit (not shown) provided outside the plasma processing chamber (100). The temperature control fluid supplied to the flow path (109) is returned to the chiller unit. By circulating, for example, low-temperature brine as the temperature control fluid within the flow path (109), the wafer support (101), the wafer (W) mounted on the wafer support (101), the edge ring (E), or the outer ring (D) can be cooled to a predetermined temperature. In the Euro (109), by circulating, for example, high-temperature brine as a temperature control fluid, the wafer support (101), the wafer (W) mounted on the wafer support (101), the edge ring (E), or the outer ring (D) can be heated to a predetermined temperature.

[0051] In addition, when a temperature control mechanism is provided in the wafer support (101), the form of the temperature control mechanism is not limited to the above-described flow path (109), and may be of a different form, such as a resistance heating type heater. In addition, the component on which the temperature control mechanism is placed in the wafer support (101) is not limited to the lower electrode (103) and may be a different component.

[0052] The electrostatic chuck (104) is provided on the lower electrode (103). The electrostatic chuck (104) is configured to mount a wafer (W), and in one embodiment, its central portion constitutes a substrate mounting portion. In addition, in one embodiment, an edge ring (E) is also mounted on the electrostatic chuck (104). The electrostatic chuck (104) may hold both the wafer (W) and the edge ring (E) by electrostatic force. In one embodiment, the upper surface of the central portion of the electrostatic chuck (104) is formed higher than the upper surface of the peripheral portion, and the wafer (W) is mounted on the upper surface (104a) of the central portion of the electrostatic chuck (104), and the edge ring (E) is mounted on the upper surface (104b) of the peripheral portion of the electrostatic chuck (104).

[0053] The edge ring (E) is a member provided to surround the central portion (specifically the outer circumference of the central portion) of the electrostatic chuck (104). In other words, the edge ring (E) is a member arranged to surround a wafer (W) mounted on the electrostatic chuck (104) (specifically mounted on the upper surface (104a) of the central portion of the electrostatic chuck (104). The edge ring (E) is an example of a "first ring" according to the present disclosure and is formed in an annular shape, more specifically, formed in an annular shape when viewed in a planar view. Conductive materials such as Si and SiO2 are used as the material for the edge ring (E).

[0054] The outer ring (D) is a member that covers the outer side of the edge ring (E). In other words, the outer ring (D) is a member provided to surround the edge ring (E) (specifically, the outer circumference of the edge ring (E)). In addition, the outer ring (D) is an example of a “second ring” according to the present disclosure and is formed in an annular shape, more specifically, formed in an annular shape when viewed in a plane.

[0055] Conductive materials such as Si and SiC are used as the material for the outer ring (D). The material of the edge ring (E) and the material of the outer ring (D) may be the same or different.

[0056] This outer ring (D) is provided so as not to overlap with the edge ring (E) when viewed in a plane. Specifically, the outer ring (D) is formed so as not to overlap with the edge ring (E) when viewed in a plane when concentric with the edge ring (E). More specifically, for example, the outer ring (D) is formed such that the diameter of the innermost part of the outer ring (D) is larger than the diameter of the outermost part of the edge ring (E).

[0057] The replacement of the outer ring (D) in the wafer support (101) is performed using a return ring (T). A return ring (T) may also be used for the replacement of the edge ring (E).

[0058] The return ring (T) is a member provided below the edge ring (E) and the outer ring (D) such that, when viewed in a planar view, its inner portion overlaps with the edge ring (E) and its outer portion overlaps with the outer ring (D). Additionally, the return ring (T) is an example of the "third ring" and "inner ring" according to the present disclosure and is formed in an annular shape, more specifically, formed in an annular shape when viewed in a planar view. For example, the return ring (T) is formed such that the diameter of the innermost portion of the return ring (T) is smaller than the diameter of the outermost portion of the edge ring (E), and the diameter of the outermost portion of the return ring (T) is larger than the diameter of the innermost portion of the outer ring (D).

[0059] As the material for the return ring (T), insulating materials such as SiO2 or ceramic materials (e.g., Al2O3) are used. In addition, the material for the return ring (T) may be a conductive material such as Si or SiC, which has a higher electrical resistivity than the edge ring (E), that is, a conductive material such as Si or SiC, in which the impurity concentration is adjusted so that the electrical resistivity is higher than that of the edge ring (E).

[0060] Additionally, the return ring (T) has a hole (Ta) into which the lifter (108) is inserted at a position corresponding to each of the lifters (108). The hole (Ta) is provided to penetrate the return ring (T) at the inner circumference of the return ring (T) which overlaps with the outer circumference of the edge ring (E) when viewed in a plane.

[0061] In one embodiment, as shown in FIG. 3, a concave portion (Da) that is concave radially outward from the outer ring (D) is formed along the entire circumference of the innermost portion of the outer ring (D). The return ring (T) is formed to fit the concave portion (Da) of the outer ring (D).

[0062] In the central part of the electrostatic chuck (104), as shown in FIG. 2, an electrode (110) is provided for holding a wafer (W) by electrostatic adsorption. In the peripheral part of the electrostatic chuck (104), an electrode (111) may be provided for holding an edge ring (E) by electrostatic adsorption. Specifically, the electrode (111) is provided in a part that overlaps with the edge ring (E) when viewed in a planar view, but does not overlap with the return ring (T). The electrostatic chuck (104) has a configuration in which the electrodes (110, 111) are placed between an insulating material, for example, made of an insulating material.

[0063] A DC voltage from a DC power source (not shown) is applied to the electrode (110). Due to the electrostatic force generated by this, a wafer (W) is adsorbed and held on the upper surface (104a) of the central part of the electrostatic chuck (104). Likewise, a DC voltage from a DC power source (not shown) is applied to the electrode (111). Due to the electrostatic force generated by this, an edge ring (E) is adsorbed and held on the upper surface (104b) of the peripheral part of the electrostatic chuck (104). The electrode (111) is a bipolar type, for example, comprising a pair of electrodes (111a, 111b).

[0064] In this embodiment, the central part of the electrostatic chuck (104) where the electrode (110) is provided and the peripheral part where the electrode (111) is provided are integrally formed, but the central part and the peripheral part may be separate bodies.

[0065] In addition, in this embodiment, the electrode (111) for adsorbing and holding the edge ring (E) is made to be bipolar, but it may be unipolar.

[0066] Additionally, the central portion of the electrostatic chuck (104) is formed with a diameter smaller than, for example, the diameter of the wafer (W), and when the wafer (W) is mounted on the upper surface (104a) of the central portion of the electrostatic chuck (104), the peripheral portion of the wafer (W) protrudes from the central portion of the electrostatic chuck (104).

[0067] Additionally, the edge ring (E) has a step formed on its upper surface, and the upper surface of the outer periphery is formed higher than the upper surface of the inner periphery. The inner periphery of the edge ring (E) is formed to go into the lower side of the periphery of the wafer (W) protruding from the center of the electrostatic chuck (104). That is, the inner diameter of the edge ring (E) is formed to be smaller than the outer diameter of the wafer (W).

[0068] The support member (105) is a member formed in an annular shape when viewed from a planar perspective using an insulating material such as quartz, for example, and supports the lower electrode (103) and the electrostatic chuck (104). In one embodiment, the support member (105) is equipped with an outer ring (D) and a return ring (T).

[0069] The upper surface (104a) of the central part of the electrostatic chuck (104) becomes a substrate mounting surface on which a wafer (W) is mounted. Additionally, the upper surface (105a) of the support (105) becomes a ring mounting surface on which an outer ring (D) and a return ring (T) are mounted, and the upper surface (104b) of the peripheral part of the electrostatic chuck (104) becomes a separate ring mounting surface on which an edge ring (E) is mounted, located between the aforementioned substrate mounting part and the ring mounting surface.

[0070] The insulator (106) is a cylindrical member formed of ceramic or the like and supports the support (105). The insulator (106) is formed to have an outer diameter equal to the outer diameter of the support (105), for example, and supports the peripheral portion of the support (105).

[0071] The lifter (107) is a member that moves up and down relative to the upper surface (104a) of the central part of the electrostatic chuck (104), and is formed in a column shape using, for example, ceramic material. When the lifter (107) rises, its upper end protrudes from the upper surface (104a), making it possible to support the wafer (W). By means of this lifter (107), the wafer (W) can be transferred between the wafer support (101) and the transfer arm (71) of the transfer device (70).

[0072] Additionally, three or more lifters (107) are provided spaced apart from each other and are arranged to extend in the vertical direction.

[0073] The lifter (107) is raised by an actuator (112). The actuator (112) has, for example, a support member (113) that supports a plurality of lifters (107) and a drive unit (114) that generates a driving force to raise the support member (113) and raises the plurality of lifters (107). The drive unit (114) has, for example, a motor (not shown) as a driving source that generates the driving force.

[0074] The lifter (107) is inserted into an insertion hole (115) that has an upper opening at the top of the upper surface (104a) of the central part of the electrostatic chuck (104). The insertion hole (115) is formed to extend downward from, for example, the upper surface (104a) of the central part of the electrostatic chuck (104) to reach the bottom surface of the lower electrode (103).

[0075] The lifter (108) is a lifting member that moves up and down with respect to the upper surface (105a) of the support body (105) that forms the aforementioned ring mounting surface, and is formed in a column shape using, for example, ceramic material. When the lifter (108) is raised, its upper end is configured to protrude from the upper surface (105a) of the support body (105). Specifically, the lifter (108) is configured to protrude from a position that overlaps the edge ring (E) and the return ring (T) when viewed from a plane on the upper surface (105a) of the inner circumference of the support body (105).

[0076] Additionally, three or more lifters (108) are provided spaced apart from each other along the circumferential direction of the electrostatic chuck (104) and are provided to extend in the vertical direction.

[0077] The lifter (108) is raised by an actuator (116). The actuator (116) has, for example, a support member (117) that supports a plurality of lifters (108), and a drive unit (118) that generates a driving force to raise the support member (117) and raises the plurality of lifters (107). The drive unit (118) has, for example, a motor (not shown) as a driving source that generates the driving force.

[0078] The lifter (108) is inserted into an insertion hole (119) that has an upper opening on the upper surface (105a) of a support member (105) that supports an outer ring (D) and a return ring (T). The insertion hole (119) is formed in the inner circumference of the support member (105), for example, to penetrate the support member (105).

[0079] Additionally, the lifter (108) has a first engaging part (108a) and a second engaging part (108b), as shown in FIG. 3.

[0080] The first engaging portion (108a) is formed by the upper part of the lifter (108) and protrudes upward from the hole (Ta) of the return ring (T) to engage with the edge ring (E). When the lifter (108) rises, the first engaging portion (108a) passes through the hole (Ta) of the return ring (T) and contacts the bottom surface of the edge ring (E), thereby supporting the edge ring (E) from the bottom surface.

[0081] The second engagement part (108b) is located below the first engagement part (108a) and engages with the return ring (T). Specifically, the second engagement part (108b) is configured to contact the bottom surface of the return ring (T) without passing through the hole (Ta) of the return ring (T), thereby supporting the return ring (T) from the bottom surface.

[0082] Additionally, the second interlocking part (108b) is connected to the base side of the first interlocking part (108a) along the axial direction of the lifter (108). Additionally, the second interlocking part (108b) has a protrusion (108c) that protrudes outward from the outer circumference of the first interlocking part (108a) at a position connected to the first interlocking part (108a).

[0083] The specific shapes of the first interlocking part (108a), the second interlocking part (108b), and the protrusion (108c) are not particularly limited. For example, the first interlocking part (108a), the second interlocking part (108b), and the protrusion (108c) may each be cylindrical members and may be coaxial with each other.

[0084] The aforementioned actuator (116) raises the lifter (108) in which the return ring (T) is engaged with the second engagement part (108b), and raises the outer ring (D) engaged with the return ring (T).

[0085] Additionally, the actuator (116) raises the lifter (108) in which the edge ring (E) is engaged with the first engagement part (108a), thereby raising the edge ring (E).

[0086] On the upper surface (104a) of the central portion of the electrostatic chuck (104), a gas supply hole (not shown) is formed to supply heat transfer gas to the back surface of a wafer (W) mounted on the upper surface (104a). Heat transfer gas from a gas supply unit (not shown) is supplied through the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured to supply heat transfer gas from a gas source, for example, to the gas supply hole through a pressure controller.

[0087] Additionally, as shown in FIG. 4, a heat transfer gas supply path (120) is formed on the upper surface (104b) of the periphery of the electrostatic chuck (104). The heat transfer gas supply path (120) supplies a heat transfer gas, such as helium gas, to the back surface of the edge ring (E) mounted on the upper surface (104b). The heat transfer gas supply path (120) is provided to be in fluid communication with the upper surface (104b). Furthermore, the side of the heat transfer gas supply path (120) opposite to the upper surface (104b) is in fluid communication with a gas supply unit (125). The gas supply unit (125) may include one or more gas sources (126) and one or more flow controllers (127). In one embodiment, the gas supply unit (125) is configured to supply heat transfer gas to a heat transfer gas supply line, for example, from a gas source (126) through a flow controller (127). Each flow controller (127) may include, for example, a mass flow controller or a pressure-controlled flow controller.

[0088] As illustrated in FIG. 2, the upper electrode (102) also functions as a shower head for supplying one or more processing gases from a gas supply unit (130) to a plasma processing space (100s). In one embodiment, the upper electrode (102) has a gas inlet (102a), a gas diffusion chamber (102b), and a plurality of gas outlets (102c). The gas inlet (102a) is fluidly connected to, for example, the gas supply unit (130) and the gas diffusion chamber (102b). The plurality of gas outlets (102c) are fluidly connected to the gas diffusion chamber (102b) and the plasma processing space (100s). In one embodiment, the upper electrode (102) is configured to supply one or more processing gases from the gas inlet (102a) to the plasma processing space (100s) through the gas diffusion chamber (102b) and the plurality of gas outlets (102c).

[0089] The gas supply unit (130) may include one or more gas sources (131) and one or more flow controllers (132). In one embodiment, the gas supply unit (130) is configured to supply, for example, one or more processing gases from each corresponding gas source (131) through each corresponding flow controller (132) to the gas inlet (102a). Each flow controller (132) may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit (130) may include one or more flow modulation devices that modulate or pulse the flow rate of one or more processing gases.

[0090] The RF power supply unit (140) is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as a lower electrode (103), an upper electrode (102), or both of the lower electrode (103) and the upper electrode (102). By doing so, plasma is generated from one or more processing gases supplied to the plasma processing space (100s). Accordingly, the RF power supply unit (140) can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in a plasma processing chamber. The RF power supply unit (140) includes, for example, two RF generation units (141a, 141b) and two matching circuits (142a, 142b). In one embodiment, the RF power supply unit (140) is configured to supply a first RF signal from the first RF generation unit (141a) through the first matching circuit (142a) to the lower electrode (103). For example, the first RF signal may have a frequency within the range of 27 MHz to 100 MHz.

[0091] In addition, in one embodiment, the RF power supply unit (140) is configured to supply a second RF signal from the second RF generation unit (141b) through the second matching circuit (142b) to the lower electrode (103). For example, the second RF signal may have a frequency within the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit (141b).

[0092] Additionally, although omitted, other embodiments may be considered in the present disclosure. For example, in an alternative embodiment, the RF power supply unit (140) may be configured to supply a first RF signal from an RF generating unit to the lower electrode (103), supply a second RF signal from another RF generating unit to the lower electrode (103), and supply a third RF signal from yet another RF generating unit to the lower electrode (103). In addition, in another alternative embodiment, a DC voltage may be applied to the upper electrode (102).

[0093] In addition, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsed the RF signal amplitude between an on state and an off state, or between two or more different on states.

[0094] The exhaust system (150) may be connected, for example, to an exhaust port (100e) provided in the bottom portion of the plasma processing chamber (100). The exhaust system (150) may include a pressure valve and a vacuum pump. The vacuum pump may include a turbo molecular pump, a roughing pump, or a combination thereof.

[0095] Wafer processing of the processing module (60)

[0096] Next, an example of wafer processing performed using the processing module (60) will be described. In addition, the processing module (60) performs processing, such as etching, on the wafer (W).

[0097] First, a wafer (W) is brought into the interior of the plasma processing chamber (100) by means of a conveying device (70), and the wafer (W) is mounted on the electrostatic chuck (104) by means of the lifting of the lifter (107). Then, a DC voltage is applied to the electrode (110) of the electrostatic chuck (104), and thereby, the wafer (W) is electrostatically adsorbed to the electrostatic chuck (104) by electrostatic force and held. In addition, after the wafer (W) is brought in, the interior of the plasma processing chamber (100) is depressurized to a predetermined vacuum level by means of an exhaust system (150).

[0098] Next, a processing gas is supplied from the gas supply unit (130) through the upper electrode (102) to the plasma processing space (100s). Additionally, high-frequency power (HF) for plasma generation is supplied from the RF power supply unit (140) to the lower electrode (103), thereby exciting the processing gas to generate plasma. At this time, high-frequency power (LF) for ion introduction may also be supplied from the RF power supply unit (140). Then, plasma processing is performed on the wafer (W) by the action of the generated plasma.

[0099] Additionally, during plasma processing, a DC voltage is applied to the electrode (111) of the electrostatic chuck (104), and thereby, the edge ring (E) is electrostatically adsorbed to the electrostatic chuck (104) by electrostatic force and held. Additionally, during plasma processing, a heating gas is supplied through the heating gas supply path (120), etc., toward the bottom surface of the wafer (W) and the edge ring (E) adsorbed to the electrostatic chuck (104).

[0100] When the plasma treatment is terminated, the supply of high-frequency power (HF) from the RF power supply unit (140) and the supply of treatment gas from the gas supply unit (130) are stopped. If high-frequency power (LF) was supplied during the plasma treatment, the supply of said high-frequency power (LF) is also stopped. Subsequently, the adsorption holding of the wafer (W) by the electrostatic chuck (104) is stopped. In addition, the supply of heat transfer gas to the bottom surface of the wafer (W) may be stopped.

[0101] After that, the wafer (W) is lifted by the lifter (107) and removed from the electrostatic chuck (104). At this time of removal, the wafer (W) may be subjected to static elimination treatment. Then, the wafer (W) is removed from the plasma treatment chamber (100) by the transport device (70), and the series of wafer processing is completed.

[0102] <Effect of the outer ring (D) and reason for providing the return ring (T)>

[0103] In the processing module (60), the outer ring (D) is formed of a conductive material. Therefore, unlike when the outer ring (D) is formed of an insulating material, a sheath is formed on the upper side of the outer ring (D) during plasma processing. As a result, the following effects are achieved.

[0104] (1) Since the reaction product is difficult to attach to the outer ring (D) by the sheath, it is possible to suppress the effect of particles caused by the reaction product attached to the outer ring (D) on the wafer (W).

[0105] (2) Since the outer ring (D) is less worn out by the sheath, the lifespan of the outer ring (D) can be extended.

[0106] (3) As a result of the reduced consumption of the outer ring (D), the decrease in the etching rate of the periphery of the wafer (W) caused by the consumption of the outer ring (D) can be suppressed.

[0107] However, since both the outer ring (D) and the edge ring (E) are worn out, replacement is necessary, but the degree of wear differs between the outer ring (D) and the edge ring (E). Therefore, it is desirable to be able to replace the outer ring (D) and the edge ring (E) individually. However, if lifters (108) are provided individually for the outer ring (D) and the edge ring (E) to replace them individually, the cost increases. To prevent the cost from increasing, it is desirable to use a common lifter (108) between the rings.

[0108] In addition, since the outer ring (D), formed of a conductive material, is electrically floating during plasma treatment, a potential difference is generated between it and the edge ring (E), which is also formed of a conductive material, due to the influence of the plasma. Therefore, if the gap between the outer ring (D) and the edge ring (E) is small, there is a risk of abnormal discharge occurring when the potential difference increases. Furthermore, when the outer ring (D) and the edge ring (E) are made to overlap when viewed from a plane, it is difficult to make the gap between the two large (e.g., 2 mm or more).

[0109] Accordingly, in this embodiment, the outer ring (D) and the edge ring (E) do not overlap when viewed in a plane, and a relatively large gap (e.g., 0.1 mm to 3 mm at room temperature, more preferably 0.2 mm to 2.5 mm) is provided between the outer periphery of the outer ring (D) and the inner periphery of the edge ring (E).

[0110] In addition, if the outer ring (D) and the edge ring (E) are formed as described above, unless countermeasures are taken, it is not possible to exchange both the outer ring (D) and the edge ring (E) using a common lifter (108) between the rings.

[0111] Therefore, a conveying ring (T) configured to support both the outer ring (D) and the edge ring (E), and a lifter (108) having a first engaging part (108a) engaged with the edge ring (E) and a second engaging part (108b) engaged with the conveying ring (T) that supports the outer ring (D) are used. Below, the exchange process of the edge ring (E) and the outer ring (D) using the conveying ring (T) and the lifter (108) will be described.

[0112] Exchange Processing

[0113] First, an example of a process for simultaneously mounting the edge ring (E) and the outer ring (D) of a wafer support (101) in a plasma processing system (1) will be explained using FIGS. 5 to 7. FIGS. 5 to 7 are drawings illustrating the surrounding state of the wafer support (101) during the process. In addition, the following process is executed under the control of a control device (80).

[0114] (Step S1: Inflow)

[0115] First, the transport ring (T) supporting the edge ring (E) and the outer ring (D) within the storage module (61) is brought into the plasma processing chamber (100) of the processing module (60) to which the edge ring (E) and the outer ring (D) are mounted by the transport device (70).

[0116] Specifically, the return ring (T) within the storage module (61) is held by the return arm (71) of the return device (70). Subsequently, the return arm (71) holding the return ring (T) is inserted into the plasma processing chamber (100) of the processing module (60) to be mounted, through an inlet / outlet port (not shown). At this time, the plasma processing chamber (100) may be depressurized. Then, as shown in FIG. 5, the return ring (T) is returned by the return arm (71) to the upper surface (104b) of the periphery of the electrostatic chuck (104) and the upper surface (105a) of the support body (105).

[0117] (Stage S2: Mounted)

[0118] Next, the edge ring (E) and the outer ring (D) are mounted from the conveying device (70) to the electrostatic chuck (104) and the support (105).

[0119] Specifically, the entire lifter (108) is lifted, and as shown in FIG. 6, the edge ring (E) is transferred from the return ring (T) held by the return arm (71) to the first engagement part (108a) of the lifter (108) through the hole (Ta) of the return ring (T). After that, the entire lifter (108) continues to lift, and as shown in FIG. 7, the return ring (T) supporting the outer ring (D) is transferred from the return arm (71) to the second engagement part (108b) of the lifter (108). At this time, the lifting of the lifter (108) is carried out until the top part of the second engagement part (108b) reaches a first predetermined height. The first predetermined height here is a height such that when the return arm (71) is inserted and withdrawn between the upper surface (104a) of the central part of the electrostatic chuck (104), the return ring (T) supported by the second interlocking part (108b), and the outer ring (D) supported by the return ring (T), the return arm (71) does not interfere with the outer ring (D) and the return ring (T), etc.

[0120] Next, the return arm (71) is ejected from the plasma processing chamber (100). Additionally, the lifter (108) is lowered. By doing so, the edge ring (E), the outer ring (D), and the return ring (T) are mounted on the upper surface (104b) of the periphery of the electrostatic chuck (104) and the upper surface (105a) of the support (105). Specifically, first, the return ring (T) and the outer ring (D) are mounted on the upper surface (105a) of the support (105), and subsequently, the edge ring (E) is mounted on the upper surface (104b) of the periphery of the electrostatic chuck (104). That is, regarding the edge ring (E), the return ring (T) and the outer ring (D) are mounted on the upper surface (104b) (i.e., a separate ring mounting surface) of the periphery of the electrostatic chuck (104) while the upper surface (105a) (i.e., the ring mounting surface) of the support (105) is mounted.

[0121] With this, a series of processes for simultaneously mounting the edge ring (E) and the outer ring (D) is completed.

[0122] Additionally, after mounting the edge ring (E), a DC voltage from a DC power source (not shown) is applied to the electrode (111) provided in the electrostatic chuck (104), and the edge ring (E) may be adsorbed and held by the electrostatic force generated by this.

[0123] In addition, in one embodiment, a small gap is provided between the lower surface of the edge ring (E) and the upper surface of the return ring (T) in the state after mounting the edge ring (E). This is to ensure that the edge ring (E) is properly mounted on the electrostatic chuck (104).

[0124] Next, an example of a process for simultaneously removing the edge ring (E) and the outer ring (D) of the wafer support (101) in the plasma processing system (1) will be described.

[0125] (Step S11: Transfer of edge ring (E) and outer ring (D))

[0126] First, the edge ring (E) and the outer ring (D) are transferred from the electrostatic chuck (104) to the lifter (108).

[0127] Specifically, first, when a DC voltage is applied to the electrode (111), the application is stopped and the adsorption holding of the edge ring (E) to the electrostatic chuck (104) is released.

[0128] Subsequently, the entire lifter (108) is raised, and an edge ring (E) is delivered from the upper surface (104b) of the periphery of the electrostatic chuck (104) to the first engagement portion (108a) of the lifter (108) that passes through the insertion hole (119) and the hole (Ta) of the return ring (T) (see FIG. 8 described later). After that, the entire lifter (108) continues to be raised, and a return ring (T) supporting an outer ring (D) is delivered from the upper surface (105a) of the support body (105) to the second engagement portion (108b) of the lifter (108). At this time, the lifting of the lifter (108) is carried out until the top portion of the second engagement portion (108b) reaches the aforementioned first predetermined height.

[0129] (Step S12: Export)

[0130] Next, the edge ring (E) and the outer ring (D) are removed from the plasma processing chamber (100) of the processing module (60).

[0131] Specifically, a return arm (71) is inserted into a depressurized plasma processing chamber (100) through an inlet / outlet port (not shown). Then, as shown in FIG. 7, the return arm (71) is moved between the upper surface (104a) of the central part of the electrostatic chuck (104), the return ring (T) supported by the second engagement part (108b) of the lifter (108), and the outer ring (D) supported by the return ring (T).

[0132] Subsequently, the lowering of the entire lifter (108) is performed, and as shown in FIG. 6, a return ring (T) supporting an outer ring (D) is transferred from the second engagement part (108b) of the lifter (108) to the return arm (71). After that, the lowering of the entire lifter (108) continues, and as shown in FIG. 5, an edge ring (E) is transferred from the first engagement part (108a) of the lifter (108) to the return ring (T) supported by the return arm (71).

[0133] Subsequently, the return arm (71) is ejected from the plasma processing chamber (100), and the return ring (T) supporting the outer ring (D) and the edge ring (E) is ejected from the processing module (60). The ejected return ring (T) supporting the outer ring (D) and the edge ring (E) is brought into the storage module (61).

[0134] With this, a series of processes for simultaneously removing the edge ring (E) and the outer ring (D) is completed.

[0135] Next, an example of the removal process of the edge ring (E) alone will be explained using FIG. 8. FIG. 8 is a drawing illustrating the surrounding state of the wafer support (101) during the above process.

[0136] (Step S21: Transmission of edge ring (E))

[0137] First, the edge ring (E) is transferred from the electrostatic chuck (104) to the lifter (108).

[0138] Specifically, first, when a DC voltage is applied to the electrode (111), the application is stopped and the adsorption holding of the electrostatic chuck (104) of the edge ring (E) is released.

[0139] Subsequently, the entire lifter (108) is lifted, and as shown in FIG. 8, an edge ring (E) is transferred from the upper surface (104b) of the periphery of the electrostatic chuck (104) to the first engagement portion (108a) of the lifter (108) which passes through the insertion hole (119) and the hole (Ta) of the return ring (T). At this time, the lifting of the lifter (108) is performed within a range where the return ring (T) is not transferred to the second engagement portion (108b), and is also performed until the top portion of the first engagement portion (108a) reaches a second predetermined height. The second predetermined height here is a height such that when the return arm (71) is inserted and removed between the outer ring (D) mounted on the support body (105) and the edge ring (E) supported by the first interlocking part (108a), the return arm (71) does not interfere with the edge ring (E) and the outer ring (D), etc.

[0140] (Step S22: Export)

[0141] Next, the edge ring (E) is removed from the plasma processing chamber (100) of the processing module (60).

[0142] Specifically, a return arm (71) is inserted into a depressurized plasma processing chamber (100) through an inlet / outlet port (not shown). Then, the return arm (71) is moved between an outer ring (D) mounted on a support (105) and an edge ring (E) supported by a first engagement part (108a) of a lifter (108).

[0143] Subsequently, the lowering of the entire lifter (108) is executed, and the edge ring (E) is transferred from the first engagement part (108a) of the lifter (108) to the return arm (71). Subsequently, the return arm (71) is ejected from the plasma processing chamber (100), and the edge ring (E) is ejected outside the processing module (60). The ejected edge ring (E) is brought into the storage module (61).

[0144] With this, the removal process of a series of edge rings (E) alone is completed.

[0145] Next, an example of a process for mounting an edge ring (E) alone will be described.

[0146] (Step S31: Inflow)

[0147] First, the edge ring (E) inside the storage module (61) is brought into the plasma processing chamber (100) of the processing module (60) to which the edge ring (E) is mounted by the transport device (70).

[0148] Specifically, the edge ring (E) inside the storage module (61) is held by the return arm (71) of the return device (70). Subsequently, the return arm (71) holding the edge ring (E) is inserted into the plasma processing chamber (100) of the processing module (60) to be mounted, via an inlet / outlet port (not shown). At this time, the plasma processing chamber (100) may be depressurized. Then, the edge ring (E) is returned by the return arm (71) to the upper surface (104b) of the periphery of the electrostatic chuck (104). At this time, the return ring (T) and the outer ring (D) are mounted on the upper surface (105a) of the support body (105).

[0149] (Stage S32: Mounted)

[0150] Next, the edge ring (E) is mounted from the conveying device (70) to the electrostatic chuck (104).

[0151] Specifically, the lifting of the entire lifter (108) is executed, and the edge ring (E) is transferred from the return arm (71) to the first engagement part (108a) of the lifter (108) that passes through the hole (Ta) of the return ring (T). At this time, the lifting of the lifter (108) is executed until the top part of the first engagement part (108a) reaches the aforementioned second predetermined height.

[0152] Next, the return arm (71) is ejected from the plasma processing chamber (100). Additionally, the lifter (108) is lowered. By doing so, the edge ring (E) is mounted on the upper surface (104b) of the periphery of the electrostatic chuck (104).

[0153] With this, the mounting process of a series of edge rings (E) alone is completed.

[0154] Next, an example of the removal process of the outer ring (D) with the edge ring (E) removed is explained using FIG. 9. FIG. 9 is a drawing illustrating the state around the wafer support (101) during the above process.

[0155] (Step S41: Transfer of the outer ring (D))

[0156] First, the return ring (T) supporting the outer ring (D) is transferred from the electrostatic chuck (104) to the lifter (108).

[0157] Specifically, first, the entire lifter (108) is lifted, and as shown in FIG. 9, an edge ring (E) is delivered from the upper surface (105a) of the support (105) to the second engagement part (108b) of the lifter (108) which passes through the insertion hole (119) and the hole (Ta) of the return ring (T). At this time, the lifter (108) is lifted until the top part of the second engagement part (108b) reaches the aforementioned first predetermined height.

[0158] (Step S42: Export)

[0159] Next, the return ring (T) supporting the outer ring (D) is removed from the plasma processing chamber (100) of the processing module (60).

[0160] Specifically, a return arm (71) is inserted into a depressurized plasma processing chamber (100) through an inlet / outlet port (not shown). Then, the return arm (71) is moved between the upper surface (104a) of the central part of the electrostatic chuck (104), the return ring (T) supported by the second engagement part (108b) of the lifter (108), and the outer ring (D) supported by the return ring (T).

[0161] Subsequently, the lowering of the entire lifter (108) is executed, and a return ring (T) supporting an outer ring (D) is transferred from the second engagement part (108b) of the lifter (108) to the return arm (71). Subsequently, the return arm (71) is ejected from the plasma processing chamber (100), and the return ring (T) supporting the outer ring (D) is ejected outside the processing module (60). The ejected return ring (T) supporting the outer ring (D) is brought into the storage module (61).

[0162] With this, the removal process of the outer ring (D) is completed with the series of edge rings (E) removed.

[0163] Next, an example of the mounting process of the outer ring (D) alone will be described.

[0164] (Step S51: Inflow)

[0165] First, a return ring (T) that supports only the outer ring (D) inside the storage module (61) is brought into the plasma processing chamber (100) of the processing module (60) to which the outer ring (D) is mounted by the return device (70).

[0166] Specifically, a return ring (T) that supports only the outer ring within the storage module (61) is held by a return arm (71) of a return device (70). Subsequently, the return arm (71) holding the return ring (T) is inserted into the plasma processing chamber (100) of the processing module (60) to be mounted, via an inlet / outlet port (not shown). At this time, the plasma processing chamber (100) may be depressurized. Then, the return ring (T) is returned by the return arm (71) to the upper surface (105a) of the support body (105).

[0167] (Stage S52: Mounted)

[0168] Next, the edge ring (E) is mounted from the conveying device (70) to the electrostatic chuck (104).

[0169] Specifically, the entire lifter (108) is lifted, and the return ring (T), which supports only the outer ring (D), is transferred from the return arm (71) to the second engagement part (108b) of the lifter (108) that passes through the hole (Ta) of the return ring (T). At this time, the lifter (108) is lifted until the top part of the second engagement part (108b) reaches the first predetermined height mentioned above.

[0170] Next, the return arm (71) is ejected from the plasma processing chamber (100). Additionally, the lifter (108) is lowered. By doing so, the outer ring (D) and the return ring (T) are mounted on the upper surface (105a) of the support (105).

[0171] With this, the mounting process of the series of outer rings (D) alone is completed.

[0172] <Effects, etc.>

[0173] As described above, according to the present embodiment, the two types of rings, the edge ring (E) and the outer ring (D), provided by the wafer support (101), can be exchanged with a common lifter (108).

[0174] In addition, according to the present embodiment, simultaneous replacement of the edge ring (E) and the outer ring (D) and replacement of the edge ring (E) alone can be selectively performed. Therefore, when the edge ring (E) is worn out more than the outer ring (D), both the edge ring (E) and the outer ring (D) can be replaced at an appropriate timing, and as a result, the lifespan of both can be extended.

[0175] In addition, according to the present embodiment, the edge ring (E) and the outer ring (D) can be exchanged simultaneously, so the time required for their exchange can be reduced. Also, since the lifter (108) is common to both the edge ring (E) and the outer ring (D), costs can be lowered and space can be saved.

[0176] In addition, as described above, SiC or ceramic materials may be used as the material for the return ring (T). By using SiC or ceramic materials, the resistance of the return ring (T) to plasma can be increased compared to the case where SiO2 is used.

[0177] In addition, when replacing both the edge ring (E) and the outer ring (D), the edge ring (E) and the outer ring (D) may be removed simultaneously, and after mounting the outer ring (D) using the return ring (T), the edge ring (E) may be mounted individually without using the return ring (T). By doing so, both the outer ring (D) and the edge ring (E) can be mounted in a more appropriate position.

[0178] <Examples of variations of the outer ring and return ring>

[0179] Figure 10 is a drawing illustrating another example of an outer ring and a return ring.

[0180] In order to prevent positional misalignment between the outer ring and the return ring along the radial direction, a protrusion may be provided on one side and a recess that engages with the protrusion may be provided on the other side. Specifically, as shown in FIG. 10, a recess (hereinafter referred to as an "annular recess") (D1b) that is concave upward along the entire circumference along the curvature of the outer ring (D1) may be formed on the lower surface of the inner circumference of the outer ring (D1). Additionally, a convex portion (hereinafter referred to as an "annular convex portion") (T1b) that protrudes upward along the entire circumference along the curvature of the return ring (T1) may be formed at a position corresponding to the annular recess (D1b) on the upper surface of the outer circumference of the return ring (T1). By interlocking the annular concave portion (D1b) and the annular convex portion (T1b), positional misalignment along the radial direction of the outer ring (D1) and the return ring (T1) can be suppressed.

[0181] Instead of the example described above, a convex portion may be formed on the lower surface of the inner circumference of the outer ring (D1), and a concave portion with a shape corresponding to the convex portion of the outer ring (D1) may be formed on the upper surface of the outer circumference of the return ring (T1). By doing so, the misalignment between the outer ring (D1) and the return ring (T1) can also be suppressed.

[0182] <Example of a variation in the positioning shape of the outer ring and return ring>

[0183] FIG. 11 is a drawing illustrating another example of the positioning form of the outer ring and the return ring.

[0184] As illustrated in FIG. 11, positioning along the radial direction of the outer ring (D2) and the return ring (T2) may be performed using positioning pins (P) that are fitted on both the lower surface of the inner circumference of the outer ring (D2) and the upper surface of the outer circumference of the return ring (T2). The positioning pins (P) are members in the shape of a column (specifically, a cylinder) that extend in the vertical direction. In addition, three or more positioning pins (P) are provided spaced apart from each other along the circumferential direction of the outer ring (D2) and the return ring (T2).

[0185] In addition, positioning of the outer ring and the return ring according to the radial direction may be performed by fitting the inner circumference of the outer ring and the outer circumference of the return ring when the outer ring has a lower coefficient of thermal expansion than the return ring. Specifically, for example, a portion of the outer ring into which the return ring is fitted may be provided, and the positioning may be performed thereby. If the outer ring has a lower coefficient of thermal expansion than the return ring, even if positioning is performed by fitting as described above, neither the return ring nor the outer ring will be damaged when both the return ring and the outer ring undergo thermal expansion.

[0186] The return ring is formed of a material with a higher electrical resistivity than the outer ring. That is, the outer ring and the return ring are formed of different materials. By integrating the outer ring and the return ring, which are formed of different materials in this way, through welding or the like, positioning according to the radial direction of the outer ring and the return ring may be performed.

[0187] Although various exemplary embodiments have been described above, the invention is not limited to the aforementioned exemplary embodiments and various additions, omissions, substitutions, and changes may be made. Furthermore, it is possible to form other embodiments by combining elements from different embodiments. Explanation of the symbols

[0188] 101: Wafer support 104: Power outage check 108: Lifter 108a: First interlocking part 108b: Second interlocking part 116: Actuator D, D1, D2: Outer ring E: Edge ring T, T1, T2: Return ring Ta: Hole W: Wafer

Claims

Claim 1 A substrate support comprising: a substrate mounting portion; a first ring arranged to surround the substrate mounting portion; a second ring arranged to surround the first ring and not overlap with the first ring when viewed in a planar view; a third ring arranged below the first ring and the second ring such that its inner portion overlaps with the first ring when viewed in a planar view and its outer portion overlaps with the second ring when viewed in a planar view, and having a hole in its inner portion; a lifter having a first engagement portion protruding upward from the hole of the third ring and engaging with the first ring, and a second engagement portion located below the first engagement portion and engaging with the third ring; and an actuator for raising and lowering the lifter. Claim 2 In claim 1, the actuator raises the lifter, which is engaged with the third ring in the second engagement portion, and raises the second ring engaged with the third ring, thereby forming a substrate support. Claim 3 In claim 1, the third ring is a substrate support formed of an insulating material or a conductive material having a higher electrical resistivity than the material of the first ring. Claim 4 In claim 1, the first ring is a substrate support formed of a conductive material. Claim 5 In claim 1, the first ring is an edge ring, which is a substrate support. Claim 6 In claim 1, the second ring is a substrate support formed of a conductive material. Claim 7 A substrate support according to claim 1, wherein the second engaging portion is connected to the first engaging portion along the axial direction of the lifter and has a protrusion protruding from the outer circumference of the first engaging portion. Claim 8 In claim 1, the actuator raises the lifter, to which the first ring is engaged with the first engagement portion, thereby raising the first ring, and the substrate support. Claim 9 In claim 1, the actuator is a substrate support that raises the lifter until the top part of the first engaging part reaches a predetermined height when the first ring is conveyed. Claim 10 In claim 1, the actuator is a substrate support that raises the lifter until the top part of the second engagement part reaches a predetermined height when the third ring engaged with the second ring is returned. Claim 11 In claim 1, the actuator is a substrate support that raises the lifter until the top portion of the first engagement part reaches a predetermined height when the third ring, which is engaged with the first ring and the second ring, is returned. Claim 12 A substrate support according to any one of claims 1 to 11, further comprising a support member provided on the outer periphery of a substrate mounting portion, wherein the second ring and the third ring are mounted on the ring mounting surface of the support member. Claim 13 In claim 12, the first ring is a substrate support mounted on a separate ring mounting surface between the ring mounting surface on which the second ring and the third ring are mounted and the substrate mounting portion. Claim 14 A substrate support according to claim 13, further comprising an electrode that electrostatically adsorbs the first ring to the separate ring mounting surface, and a gas supply mechanism that supplies electric heating gas between the separate ring mounting surface and the lower surface of the first ring. Claim 15 In any one of claims 1 to 11, the actuator is a substrate support that raises and lowers the lifter, which is selectively engaged only with the first ring among the first ring, the second ring, and the third ring. Claim 16 A substrate support comprising: a substrate mounting portion; an outer ring provided to surround the substrate mounting portion; an inner ring provided below the outer ring such that the outer portion overlaps with the outer ring when viewed in a planar view and the convex portion protrudes upward from the inner ring into the concave portion of the outer ring; a lifter provided with an engaging portion that engages with the inner portion of the inner ring so that the lifter does not overlap with the outer ring when viewed in a planar view; and an actuator for raising and lowering the lifter, wherein the actuator raises the lifter in which the inner ring is engaged with the engaging portion, thereby raising the outer ring engaged with the inner ring. Claim 17 A plasma processing apparatus comprising a substrate support described in any one of claims 1 to 11 and 16, and a processing vessel configured to allow for reduced pressure, wherein the substrate support is provided inside. Claim 18 A method for exchanging rings of a substrate support, wherein the substrate support comprises: a substrate mounting portion; a first ring arranged to surround the substrate mounting portion; a second ring arranged to surround the first ring and not overlap with the first ring when viewed in a planar view; a third ring arranged below the first ring and the second ring such that its inner portion overlaps with the first ring when viewed in a planar view and its outer portion overlaps with the second ring when viewed in a planar view, and the third ring having a hole in its inner portion; and a lifter, wherein the first ring is supported by a first engagement portion of the lifter protruding upward from the hole of the third ring to return the first ring, and the third ring is supported by a second engagement portion of the lifter located below the first engagement portion to return the third ring together with the second ring.

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