Film forming apparatus and method for manufacturing part having film containing silicon

Abstract

[Task] To inhibit oxidation and form a tabernacle. [Solution] The exhaust unit reduces the pressure inside the chamber to a predetermined vacuum level. The holding unit is disposed inside the chamber and holds the film target member. The supply unit supplies a film-forming material containing silicon to the surface of the film target member. The heat source is capable of heating to a predetermined vacuum level and melts the supplied film-forming material.

Description

Technology Field

[0001] The present disclosure relates to a film forming apparatus and a method for manufacturing a part having a film comprising silicon. Background Technology

[0002] Patent Document 1 discloses a method for manufacturing a silicon film by spraying a slurry containing silicon particles by a high-speed frame spraying method. Prior art literature

[0003] Japanese Patent Publication No. 2018-48378 The problem to be solved

[0004] The present disclosure provides a technique for forming a film by inhibiting oxidation. means of solving the problem

[0005] A film-forming apparatus according to one aspect of the present disclosure comprises a chamber, an exhaust section, a holding section, a supply section, and a heat source. The exhaust section reduces the pressure inside the chamber to a predetermined vacuum level. The holding section is disposed inside the chamber and holds a film-forming member. The supply section supplies a film-forming material containing silicon to the surface of the film-forming member. The heat source is capable of heating at a predetermined vacuum level and melts the supplied film-forming material. Effects of the invention

[0006] According to the present disclosure, a film can be formed by inhibiting oxidation. Brief explanation of the drawing

[0007] FIG. 1 is a drawing illustrating an example of a schematic configuration of a membrane device according to a first embodiment. FIG. 2 is a diagram illustrating an overview of a membrane formed by a membrane forming device according to a first embodiment. FIG. 3 is a drawing illustrating an example of the film formation result of a silicon film according to an embodiment. FIG. 4 is a drawing illustrating an example of the schematic configuration of a membrane device according to a second embodiment. FIG. 5 is a diagram illustrating an overview of a membrane formed by a membrane forming device according to a second embodiment. FIG. 6 is a drawing illustrating an example of the schematic configuration of a membrane device according to a third embodiment. FIG. 7 is a diagram illustrating an overview of a membrane formed by a membrane forming device according to a third embodiment. FIG. 8 is a drawing illustrating an example of a schematic configuration of a membrane device according to a fourth embodiment. FIG. 9 is a diagram illustrating an overview of a membrane formed by a membrane forming device according to a fourth embodiment. FIG. 10 is a drawing illustrating another example of the schematic configuration of a membrane device according to the first embodiment. FIG. 11 is a drawing illustrating another example of the schematic configuration of a membrane device according to a second embodiment. FIG. 12 is a drawing illustrating another example of the schematic configuration of a membrane device according to a third embodiment. FIG. 13 is a drawing illustrating another example of the schematic configuration of a membrane device according to the fourth embodiment. Specific details for implementing the invention

[0008] Hereinafter, with reference to the drawings, embodiments of the film-forming apparatus and the method for manufacturing a part having a film including silicon disclosed in the present invention will be described in detail. Furthermore, the film-forming apparatus and the method for manufacturing a part having a film including silicon disclosed in the present invention are not limited by the present embodiments.

[0009] However, silicon (Si) is used as a surface coating material for components within chambers in semiconductor manufacturing equipment. When this silicon film is deposited in a non-vacuum state, the surface of the silicon particles oxidizes during deposition, forming oxidized regions within the silicon film that have weak adhesion. Due to these oxidized regions, silicon particles become prone to peeling off from the silicon film; these peeled silicon particles turn into particles, causing contamination and potentially impairing the functionality of the manufactured semiconductor.

[0010] Therefore, a new technology for forming a membrane by inhibiting oxidation is anticipated.

[0011] [First Embodiment]

[0012] [Device Configuration]

[0013] A first embodiment is described. FIG. 1 is a drawing illustrating an example of the schematic configuration of a film forming device (1) according to the first embodiment. The film forming device (1) according to the first embodiment has a chamber (10), a mounting platform (20), a supply unit (30), a heat source (40), and an exhaust unit (50). In addition, the film forming device (1) further has a control unit (51).

[0014] The chamber (10) is constructed to be airtight and the interior is capable of depressurization. For example, the chamber (10) is constructed of a material such as aluminum and is formed in a rectangular box shape.

[0015] A mounting platform (20) is positioned in the lower region of the chamber (10). The mounting platform (20) is provided with a holding portion (21) that holds the film-forming member. In the following embodiment, the film-forming member is made of a plate-shaped member (P), and a film is formed on the surface of the member (P). The holding portion (21) is configured to fix the member (P). For example, the holding portion (21) is provided with an interlocking portion (22) on the outer side of the member (P), and the position of the member (P) is fixed and held by placing the side of the member (P) from the outside through the interlocking portion (22).

[0016] The mounting base (20) is provided with a driving unit (23) that drives the support member (21). The driving unit (23) is configured to allow the support member (21) to move within the upper surface of the mounting base (20). For example, on the upper surface of the mounting base (20), a pair of guide rails (24a) and ball screws (27a) are provided parallel to each other in a horizontal direction (a direction perpendicular to the plane of FIG. 1). A movable base (26) is provided on the guide rail (24a). A nut (26a) engaged with the ball screw (27a) is fixed to the movable base (26). A driving mechanism, such as a motor or gear, that rotates the ball screw (27a) is provided at the end of the ball screw (27a). The movable base (26) is made movable along the guide rail (24a) by rotating the ball screw (27a) by the driving force of the motor. In the movable base (26), a pair of guide rails (24b) and ball screws (not shown) are provided parallel to each other in the direction of intersection (left and right directions in FIG. 1) that intersects with the one direction. A support member (21) is provided on the guide rail (24b). A nut engaged with the ball screw is fixed to the support member (21). A driving mechanism, such as a motor or gear, that rotates the ball screw is provided at the end of the ball screw. The support member (21) is made movable along the guide rail (24b) in a horizontal direction of intersection by rotating the ball screw by the driving force of the motor. In this way, as the movable base (26) on which the support member (21) is mounted moves in one direction and the support member (21) moves in the direction of intersection, the support member (21) is made movable in two directions within the upper surface of the mounting base (20). Furthermore, the configuration of the driving member (23) is not limited to this. The driving unit (23) may be any configuration as long as it allows the supporting unit (21) to move within the upper surface of the mounting base (20).

[0017] A supply unit (30) is positioned above the mounting base (20). The supply unit (30) is hermetically provided in the ceiling of the chamber (10). The supply unit (30) is provided with a receiving unit (31) for receiving a film-forming material. In the following embodiment, a case is described in which the film-forming material is silicone and a silicone film is formed on a member (P). Powdered silicone is stored in the receiving unit (31) as the film-forming material. A tube (32) is connected to the lower part of the receiving unit (31). The tube (32) communicates with the receiving unit (31), and its lower end is a supply port (32a). The powdered silicone contained in the receiving unit (31) is supplied into the chamber (10) through the tube (32) and falls onto the member (P) from the supply port (32a).

[0018] A heat source (40) for heating and melting a film material is disposed within the chamber (10). The heat source (40) is configured to be capable of heating the film material even in a vacuum. Examples of heat sources capable of heating the film material even in a vacuum include an electron beam and a laser light. The heat source (40) emits an electron beam or a laser light. In the following embodiments, the heat source (40) emits an electron beam (40a), but the heat source (40) may emit a laser light. The heat source (40) is positioned so that the emitted electron beam (40a) hits the location where the film material is supplied from the supply section (30) on the surface of the member (P). That is, in the first embodiment, the heat source (40) is positioned so that the electron beam (40a) hits the location on the surface of the member (P) below the supply port (32a). In addition, in FIG. 1, a heat source (40) is placed inside the chamber (10), but the configuration is not limited to this. A heat source that outputs an electron beam or laser light may be placed outside the chamber (10), and the electron beam or laser light output from the heat source may be guided into the chamber (10) by a light-guiding member such as a mirror, lens, a transparent window, or an optical fiber to irradiate the member (P).

[0019] The exhaust section (50) may be connected, for example, to an exhaust port (10e) provided at the bottom of the chamber (10). The exhaust section (50) may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0020] An opening (10a) for bringing in or taking out a member (P) is provided in the side wall of the chamber (10). The opening (10a) can be opened and closed by a gate valve (10b).

[0021] The control unit (51) processes computer-executable commands to execute various processes described in the present disclosure on the film-forming device (1). The control unit (51) may be configured to control each element of the film-forming device (1) to execute various processes described herein. The control unit (51) may be configured to include, for example, a computer.

[0022] However, as mentioned above, silicon is used as a surface coating material for components within chambers in semiconductor manufacturing equipment. Yet, when a material like silicon, which is inherently prone to oxidation, is deposited using a non-vacuum process such as thermal spraying, it is difficult to prevent oxidation of the silicon particle surface when the silicon is melted. Consequently, oxidized regions with weak adhesion form within the deposited silicon film. These oxidized regions can peel off, and the exfoliated silicon particles can become particles, causing contamination and potentially impairing the functionality of the manufactured semiconductor.

[0023] Conventionally, even in thermal spraying, oxidation prevention is attempted through methods such as reduced pressure or inert gas exchange; however, the oxygen concentration in the atmosphere is not reduced to a value where silicon does not oxidize, and the technical challenge of forming a film while suppressing oxidation still remains.

[0024] So, the membrane device (1) forms a silicon membrane by the membrane formation method described below.

[0025] The member (P) to be formed is transported into the chamber (10) from the opening (10a) and mounted on the holding portion (21). The forming device (1) holds the mounted member (P) in the holding portion (21). The forming device (1) closes the gate valve (10b) and drives the exhaust portion (50) to reduce the pressure inside the chamber (10) to a predetermined vacuum level. For example, the forming device (1) 10 inside the chamber (10) -6 Torr or more 10 -2 Less than Torr, more preferably, 10 -5 Torr or more 10 -3 The pressure is reduced to less than Torr. In addition, if oxidation can be prevented by introducing a reducing gas, etc. into the chamber (10) after or while reducing the pressure inside the chamber (10) and forming a film under a reducing gas atmosphere, then 10 -3It may be greater than Torr. FIG. 10 is a drawing illustrating another example of the schematic configuration of a film forming device (1) according to the first embodiment. FIG. 10 illustrates a case in which a gas supply system (90) is provided to supply reducing gas and diluting gas to the film forming device (1) illustrated in FIG. 1. The gas supply system (90) has a reducing gas supply source (91) and a diluting gas supply source (92) that supplies diluting gas. The chamber (10) is provided with gas inlets (10c, 10d). The reducing gas supply source (91) is configured to supply reducing gas to the gas inlet (10c) via a flow rate controller (93), and to introduce reducing gas into the chamber (10) from the gas inlet (10c). The dilution gas supply source (92) is configured to supply dilution gas to the gas inlet port (10d) via the flow controller (94) and to introduce dilution gas into the chamber (10) from the gas inlet port (10d). The film forming device (1) may supply reducing gas from at least the reducing gas supply source (91) and introduce it into the chamber (10) while depressurizing the chamber (10) or while depressurizing it, and may perform the following film forming under a reducing gas atmosphere. The reducing gas may be, for example, CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 It is a gas comprising at least one gas selected from gases, etc. Additionally, a noble gas such as Ar gas, which is a diluent gas, may be supplied to a reducing gas from a diluent gas supply source (92) and introduced into a chamber (10), and a gas combining the reducing gas and the noble gas may be introduced into the chamber (10) to perform the following film formation.

[0026] The film forming device (1) supplies a film forming material to the surface of a member (P) from a supply unit (30) and melts the supplied film forming material by a heat source (40) to form a film. FIG. 2 is a diagram illustrating an overview of film forming by the film forming device (1) according to the first embodiment. FIG. 2 shows a receiving unit (31) and a tube (32) constituting the supply unit (30). The receiving unit (31) is formed in a conical shape with an internal space that receives the silicon (S1) powder, with the width gradually narrowing toward the lower side, and the silicon (S1) powder is received therein. A tube (32) communicating with the internal space is connected to the lower part of the receiving unit (31). An aperture mechanism (33) capable of changing the size of the opening is provided at the connection part between the receiving unit (31) and the tube (32). The supply unit (30) is configured to adjust the amount of powder flowing from the receiving unit (31) to the container (32) by changing the size of the opening by the aperture mechanism (33). Additionally, the supply unit (30) may be configured to reduce pressure in the receiving unit (31) so that the amount of powder supplied is not affected by pressure.

[0027] The silicon (S1) flowing into the container (32) is supplied to the surface of the member (P) by free fall from the supply port (32a). The heat source (40) irradiates an electron beam (40a) at a position on the surface of the member (P) below the supply port (32a). As a result, the silicon (S1) falling from the supply port (32a) is heated and melted by the electron beam (40a) emitted from the heat source (40), and a silicon film is formed.

[0028] The member (P) is configured to be movable within the upper surface of the mounting base (20) by means of a driving unit (23). The film forming device (1) moves the location where the silicon film is to be formed on the member (P) by moving the holding unit (21) that holds the member (P) by means of the driving unit (23), thereby forming a silicon film on the surface of the member (P).

[0029] In this way, the film forming device (1) according to the first embodiment can form a silicon film by suppressing the oxidation of silicon by forming a silicon film in a reduced pressure chamber (10). By doing so, the film forming device (1) can suppress the oxidation of silicon and manufacture a part having a film containing silicon.

[0030] FIG. 3 is a diagram illustrating an example of the film formation result of a silicon film according to an embodiment. In FIG. 3, the inside of the chamber (10) is 10 by the film formation device (1). -4 A silicon film formed by reducing the pressure to Torr is shown as being in a "high vacuum state." Additionally, as a reference example, a silicon film formed by inert gas displacement is shown in FIG. 3 as being in an "inert gas displacement" state. In FIG. 3, the oxidized portion of the silicon film is shown in black. The oxidized portion of the silicon film was investigated by mapping oxygen atoms using energy dispersive X-ray analysis (EDX analysis). As shown in FIG. 3, the silicon film in the "high vacuum state" has fewer black oxidized portions compared to the silicon film in the "inert gas displacement" state. In this way, the film formation device (1) can form a silicon film while suppressing oxidation. Accordingly, for example, by using the film formation device (1) to coat a silicon film on the surface of a component inside the chamber of a semiconductor manufacturing device, the occurrence of contamination in the semiconductor manufacturing device can be suppressed.

[0031] Here, as a method for forming a silicon film in a reduced-pressure chamber (10), there are Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD). Since PVD and CVD are vacuum processes, they are useful as methods for forming a film while preventing oxidation. However, PVD and CVD make it difficult to form a film of 10 μm or more, making it difficult to form a thick film, which is highly desired as a coating for consumable parts.

[0032] Meanwhile, the film deposition device (1) can deposit a film of several hundred micrometers or more without oxidizing a material that is itself prone to oxidation, such as silicon. The component (P) that serves as the film deposition target is, for example, a consumable part such as a component inside a chamber of a semiconductor manufacturing device. Examples of such consumable parts include an edge ring, an upper electrode, an exhaust ring, a depot shield, etc. Accordingly, the film deposition device (1) according to the embodiment can deposit a thick silicon film on a consumable part such as a component inside a chamber of a semiconductor manufacturing device.

[0033] As described above, the film-forming device (1) according to the first embodiment has a chamber (10), an exhaust unit (50), a holding unit (21), a supply unit (30), and a heat source (40). The exhaust unit (50) reduces the pressure inside the chamber (10) to a predetermined vacuum level. The holding unit (21) is placed inside the chamber (10) and holds a film-forming target member (member (P)). The supply unit (30) supplies a film-forming material (silicon (S1)) containing silicon to the surface of the film-forming target member. The heat source (40) is capable of heating at a predetermined vacuum level and melts the supplied film-forming material. By doing so, the film-forming device (1) can form a film while suppressing oxidation. Additionally, the film-forming device (1) can form a thick film of the film-forming material.

[0034] Additionally, the film-forming device (1) according to the first embodiment further has a driving unit (23). A heat source (40) heats the location where the film-forming material is supplied from the supply unit (30) to the surface of the film-forming target member. The driving unit (23) drives the holding unit (21) so that the location where the film-forming material is supplied moves on the surface of the film-forming target member. By doing so, the film-forming device (1) can form a film on the surface of the film-forming target member while suppressing oxidation.

[0035] In addition, the exhaust section (50) 10 inside the chamber (10) -6 Torr or more 10 -2 Less than Torr, more preferably, 10-5 Torr or more 10 -3 The pressure is reduced to less than Torr. By doing so, the film forming device (1) can form a film while suppressing oxidation. Additionally, by introducing a reducing gas, etc., into the chamber (10) from the gas inlet port (10c, 10d) while reducing the pressure inside the chamber (10) or while reducing the pressure, and melting the film forming material under the atmosphere of the reducing gas to form a film, the silicon film can be formed while suppressing oxidation of silicon.

[0036] Additionally, the heat source (40) outputs an electron beam or a laser to melt the film-forming material. Accordingly, the film-forming device (1) has a chamber (10) inside, 10 -6 Torr or more 10 -2 Even in a vacuum state of less than Torr, the film material can be melted, so that the film material can be deposited on the film target member.

[0037] In addition, the film material is silicon. Accordingly, the film forming device (1) can form a silicon film with high resistance to plasma on the surface of the film target member.

[0038] Additionally, the supply unit (30) supplies a film-forming material in powder form. The supply unit (30) is positioned above the holding unit (21) and receives the film-forming material in a receiving unit (31) that is formed with a width that gradually narrows toward the lower side, and supplies the film-forming material from a supply port (32a) that is provided below the receiving unit (31) and communicates with the receiving unit (31). By doing so, the film-forming device (1) can form a film-forming material by suppressing oxidation on the surface of the film-forming target member, even when using a film-forming material in powder form.

[0039] [Second Embodiment]

[0040] Next, a second embodiment will be described. FIG. 4 is a drawing illustrating an example of the schematic configuration of a film-forming device (1) according to a second embodiment. Since the film-forming device (1) according to the second embodiment has a configuration that is partially similar to the film-forming device (1) according to the first embodiment shown in FIG. 1, the same reference numerals are assigned to the same parts, so the description is omitted and the different parts are mainly described. The film-forming device (1) according to the second embodiment has a supply unit (60) that supplies film-forming material.

[0041] The film forming device (1) according to the second embodiment has a plurality of robot arms as a supply unit (60). In the example of FIG. 4, two robot arms (61a, 61b) are provided within the chamber (10) as the supply unit (60). In this embodiment, the film forming material is formed in a rod shape. The supply unit (60) supplies the rod-shaped film forming material. For example, the robot arms (61a, 61b) hold the rod-shaped silicone and bring the rod-shaped silicone into contact with the surface of the member (P).

[0042] The heat source (40) is positioned so that the emitted electron beam (40a) hits the point where a rod-shaped film material is supplied from the supply unit (60) on the surface of the member (P). For example, the heat source (40) is positioned so that the electron beam (40a) hits the contact point where the rod-shaped silicon contacts the surface of the member (P), and the electron beam (40a) is irradiated at the contact point.

[0043] Additionally, the supply unit (60) may bring the rod-shaped silicone into contact with the surface of the member (P), or it may supply the silicone so that it is positioned near the surface of the member (P) without bringing it into contact with the surface of the member (P). In the case where it does not come into contact with the surface of the member (P), an electron beam (40a) may be directed at the tip of the rod-shaped silicone so that the molten silicone falls onto the member (P) and forms a film.

[0044] When a silicon film is formed on a member (P) to be formed by the film forming device (1) according to the second embodiment, the member (P) is transported from the opening (10a) into the chamber (10) and mounted on the holding part (21). The film forming device (1) holds the mounted member (P) in the holding part (21). The film forming device (1) closes the gate valve (10b) and drives the exhaust part (50) to reduce the pressure inside the chamber (10) to a predetermined vacuum level. For example, the film forming device (1) reduces the pressure inside the chamber (10) to 10 -6 Torr or more 10 -2 Less than Torr, more preferably, 10 -5 Torr or more 10 -3 The pressure is reduced to less than Torr. In addition, if oxidation can be prevented by introducing a reducing gas, etc. into the chamber (10) after or while reducing the pressure inside the chamber (10) and forming a film under a reducing gas atmosphere, then 10 -3It may be greater than Torr. FIG. 11 is a drawing illustrating another example of the schematic configuration of a film-forming device (1) according to a second embodiment. FIG. 11 illustrates a case in which a gas supply system (90) with the same configuration as FIG. 10 is provided in the film-forming device (1) illustrated in FIG. 4. The reducing gas supply source (91) is configured to supply reducing gas to the gas inlet port (10c) via a flow controller (93), thereby enabling the introduction of reducing gas into the chamber (10) from the gas inlet port (10c). The diluting gas supply source (92) is configured to supply diluting gas to the gas inlet port (10d) via a flow controller (94), thereby enabling the introduction of diluting gas into the chamber (10) from the gas inlet port (10d). The film forming device (1) may supply a reducing gas from at least a reducing gas source (91) while depressurizing or depressurizing the inside of the chamber (10), and introduce it into the chamber (10) to perform the following film forming under a reducing gas atmosphere. The reducing gas is, for example, CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 It is a gas containing at least one gas selected from gases, etc. Additionally, a noble gas such as Ar gas, which is a diluent gas, is supplied to the reducing gas from a diluent gas supply source (92) and introduced into the chamber (10), and a gas such as a combination of the reducing gas and the noble gas is introduced into the chamber (10) to perform the following film formation.

[0045] The film-forming device (1) supplies a film-forming material to the surface of a member (P) from a supply unit (60) and melts the supplied film-forming material by a heat source (40) to form a film. FIG. 5 is a diagram illustrating an overview of film formation by the film-forming device (1) according to a second embodiment. FIG. 5 shows two robot arms (61a, 61b) constituting the supply unit (60). The robot arms (61a, 61b) hold a silicone rod (S2) formed in a rod shape and bring the silicone rod (S2) into contact with the surface of the member (P). The robot arms (61a, 61b) alternately bring the silicone rod (S2) into contact with the surface of the member (P) so that the supply of silicone is not interrupted. For example, one of the robot arms (61a, 61b) brings the silicone rod (S2) into contact with the surface of the member (P) to supply silicone. Then, when the length of the silicone rod (S2) supplied by one robot arm becomes less than a predetermined length, the other robot arm contacts the silicone rod (S2) with the surface of the member (P) to supply silicone. The one robot arm replaces the silicone rod (S2) that has become less than a predetermined length with a new silicone rod (S2). The length of the silicone rod (S2) is detected, for example, from the position of the tip of the robot arm holding the silicone rod (S2). In the film formation device (1) according to the second embodiment, a plurality of silicone rods (S2) are pre-arranged in the chamber (10) for replacement.

[0046] The silicon rod (S2) is supplied to the surface of the member (P) by the robot arm (61a, 61b). The heat source (40) irradiates an electron beam (40a) at the location where the silicon rod (S2) contacts the surface of the member (P). By doing so, the silicon rod (S2) is heated and melted by the electron beam (40a) emitted from the heat source (40), and a silicon film is formed.

[0047] The member (P) is configured to be movable within the upper surface of the mounting base (20) by means of a driving unit (23). The film forming device (1) moves the location where the silicon film is to be formed on the member (P) by moving the holding unit (21) that holds the member (P) by means of the driving unit (23), thereby forming a silicon film on the surface of the member (P).

[0048] In this way, the film forming device (1) according to the second embodiment can form a silicon film by suppressing the oxidation of silicon by forming a silicon film in a chamber (10) that has been depressurized. In addition, a silicon film can be formed by suppressing the oxidation of silicon by introducing a reducing gas, etc., into the chamber (10) from a gas inlet port (10c, 10d) while depressurizing the chamber (10) or while depressurizing it, and melting the film forming material under an atmosphere of the reducing gas.

[0049] As described above, the supply unit (60) supplies a rod-shaped film material (silicon rod (S2)). The supply unit (60) supplies the film material from one or more directions. The supply unit (60) grips and supplies the rod-shaped film material by means of a plurality of robot arms (61a, 61b). Accordingly, the film device (1) can form a film material by suppressing oxidation on the surface of the film target member even when using a rod-shaped film material.

[0050] [Third Embodiment]

[0051] Next, a third embodiment will be described. FIG. 6 is a drawing illustrating an example of the schematic configuration of a film-forming device (1) according to the third embodiment. Since the film-forming device (1) according to the third embodiment has a configuration that is partially identical to the film-forming device (1) according to the first and second embodiments shown in FIG. 1 and FIG. 4, the same reference numerals are assigned to identical parts, so the description is omitted and the different parts are mainly described. The film-forming device (1) according to the third embodiment has a supply unit (70) that supplies film-forming material.

[0052] The supply unit (70) is provided with a cartridge (71) that contains multiple rod-shaped membrane materials. A straight tube (72) is connected to the cartridge (71). The tube (72) is formed, for example, by quartz. The tube (72) communicates with the cartridge (71), and its lower end is a supply port (72a). The cartridge (71) contains rod-shaped silicone. The rod-shaped silicone contained in the cartridge (71) is supplied sequentially to the tube (72).

[0053] The heat source (40) is positioned so that the emitted electron beam (40a) meets the location where a rod-shaped film material is supplied from the supply unit (70) on the surface of the member (P).

[0054] When a silicon film is formed on a member (P) to be formed by the film forming device (1) according to the third embodiment, the member (P) is transported from the opening (10a) into the chamber (10) and mounted on the holding part (21). The film forming device (1) holds the mounted member (P) in the holding part (21). The film forming device (1) closes the gate valve (10b) and drives the exhaust part (50) to reduce the pressure inside the chamber (10) to a predetermined vacuum level. For example, the film forming device (1) reduces the pressure inside the chamber (10) to 10 -6 Torr or more 10 -2 Less than Torr, more preferably, 10 -5 Torr or more 10 -3 The pressure is reduced to less than Torr. In addition, if oxidation can be prevented by introducing a reducing gas, etc. into the chamber (10) after or while reducing the pressure inside the chamber (10) and forming a film under a reducing gas atmosphere, then 10 -3It may be greater than Torr. FIG. 12 is a drawing illustrating another example of the schematic configuration of a film forming device (1) according to the third embodiment. FIG. 12 illustrates a case in which a gas supply system (90) with the same configuration as FIG. 10 is provided in the film forming device (1) illustrated in FIG. 6. The reducing gas supply source (91) is configured to supply reducing gas to the gas inlet port (10c) via a flow rate controller (93) and to introduce reducing gas into the chamber (10) from the gas inlet port (10c). The diluting gas supply source (92) is configured to supply diluting gas to the gas inlet port (10d) via a flow rate controller (94) and to introduce diluting gas into the chamber (10) from the gas inlet port (10d). The film forming device (1) may supply a reducing gas from at least a reducing gas source (91) while depressurizing or depressurizing the inside of the chamber (10), and introduce it into the chamber (10) to perform the following film forming under a reducing gas atmosphere. The reducing gas is, for example, CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 It is a gas comprising at least one gas selected from gases, etc. Additionally, a noble gas such as Ar gas, which is a diluent gas, may be supplied to the reducing gas from a diluent gas supply source (92) and introduced into the chamber (10), and a gas such as a combination of the reducing gas and the noble gas may be introduced into the chamber (10) to perform the following film formation.

[0055] The film forming device (1) supplies a film forming material to the surface of a member (P) from a supply unit (70) and melts the supplied film forming material by a heat source (40) to form a film. FIG. 7 is a diagram illustrating an overview of film forming by the film forming device (1) according to the third embodiment. FIG. 7 shows a cartridge (71) constituting the supply unit (70). A plurality of silicone rods (S2) formed in a rod shape are accommodated in the cartridge (71). A straight tube (72) is connected to the cartridge (71). Silicone rods (S2) are supplied sequentially and continuously from the cartridge (71) to the tube (72). A coil (73) is arranged on the outer circumference of the middle part of the tube (72) while it reaches the supply port (72a). High-frequency power is supplied to the coil (73) from a high-frequency power source not shown when the end of the silicone rod (S2) passes through the portion of the tube (72) wound by the coil (73). The ends of the continuously supplied silicone rods (S2) are heated and melted by high-frequency induction caused by the high-frequency power flowing through the coil (73), and the ends of adjacent silicone rods (S2) are connected to each other. That is, each silicone rod (S2) becomes continuous within the tube (72). The connected silicone rods (S2) are output from the supply port (72a). The supply unit (70) is provided with a pair of conveying rollers (74) at the end of the supply port (72a). The pair of conveying rollers (74) are positioned between the silicone rods (S2) and are capable of controlling rotation by a motor not shown. The supply unit (70) is capable of adjusting the supply amount of silicone rods (S2) by changing the rotation speed of the conveying rollers (74).

[0056] The silicon rod (S2) ejected by the return roller (74) is supplied to the surface of the member (P). The heat source (40) irradiates an electron beam (40a) at the location where the silicon rod (S2) contacts the surface of the member (P). As a result, the silicon rod (S2) is heated and melted by the electron beam (40a) emitted from the heat source (40), and a silicon film is formed.

[0057] The member (P) is configured to be movable within the upper surface of the mounting base (20) by means of a driving unit (23). The film forming device (1) moves the location where the silicon film is to be formed on the member (P) by moving the holding unit (21) that holds the member (P) by means of the driving unit (23), thereby forming a silicon film on the surface of the member (P).

[0058] In this way, the film-forming device (1) according to the third embodiment can form a silicon film by suppressing the oxidation of silicon by forming a silicon film within a depressurized chamber (10). Additionally, a silicon film can be formed by suppressing the oxidation of silicon by introducing a reducing gas, etc., into the chamber (10) from a gas inlet port (10c, 10d) while depressurizing the chamber (10) or while depressurizing it, and melting and forming the film-forming material under an atmosphere of the reducing gas.

[0059] As described above, the supply unit (70) supplies a rod-shaped film material (silicon rod (S2)). The supply unit (70) supplies the film material from one or more directions. The supply unit (70) supplies the film material by means of a roller (conveyor roller (74)). Accordingly, the film device (1) can form a film material by suppressing oxidation on the surface of the film target member even when using a rod-shaped film material.

[0060] Additionally, the supply unit (70) supplies a plurality of rod-shaped film materials to the tube (72) in sequence, and heats the ends of each film material by means of a heating device provided in the tube (72) to join and supply the ends of each film material. By doing so, the film device (1) can safely and stably supply the film materials without interruption, even when supplying the film materials in a rod shape.

[0061] [Fourth Embodiment]

[0062] Next, a fourth embodiment will be described. FIG. 8 is a drawing illustrating an example of the schematic configuration of a film-forming device (1) according to the fourth embodiment. Since the film-forming device (1) according to the fourth embodiment has a configuration that is partially identical to the film-forming devices (1) according to the first to third embodiments shown in FIG. 1, FIG. 4, and FIG. 6, the same reference numerals are assigned to identical parts to omit description, and the description will mainly focus on the different parts. The film-forming device (1) according to the fourth embodiment has a supply unit (80) that supplies film-forming material.

[0063] The supply unit (80) is positioned above the mounting base (20). The supply unit (80) is hermetically provided in the ceiling portion of the chamber (10). The supply unit (80) is provided with a heating vessel (81) that receives a film-forming material. By heating, the heating vessel (81) receives silicon in a liquid state as a film-forming material. A straight nozzle (82) is connected to the lower part of the heating vessel (81). The nozzle (82) is formed, for example, by quartz. The nozzle (82) communicates with the heating vessel (81), and its lower end is a supply port (82a). The liquid silicon received in the heating vessel (81) is cooled by the nozzle (82) and solidified into a rod shape, and is supplied into the chamber (10) through the nozzle (82).

[0064] The heat source (40) is positioned so that the electron beam (40a) emitted from the supply unit (80) on the surface of the member (P) meets the location where the rod-shaped film material is supplied.

[0065] When a silicon film is formed on a member (P) to be formed by the film forming device (1) according to the fourth embodiment, the member (P) is transported from the opening (10a) into the chamber (10) and mounted on the holding part (21). The film forming device (1) holds the mounted member (P) in the holding part (21). The film forming device (1) closes the gate valve (10b) and drives the exhaust part (50) to reduce the pressure inside the chamber (10) to a predetermined vacuum level. For example, the film forming device (1) reduces the pressure inside the chamber (10) to 10 -6 Torr or more 10 -2 Less than Torr, more preferably, 10 -5 Torr or more 10 -3 The pressure is reduced to less than Torr. In addition, if oxidation can be prevented by introducing a reducing gas, etc. into the chamber (10) after or while reducing the pressure, and forming a film under a reducing gas atmosphere, then 10 -3It may be greater than Torr. FIG. 13 is a drawing illustrating another example of the schematic configuration of a film forming device (1) according to the fourth embodiment. The film forming device (1) shown in FIG. 13 illustrates a case where a gas supply system (90) with the same configuration as FIG. 10 is provided in the film forming device (1) shown in FIG. 8. The reducing gas supply source (91) is configured to supply reducing gas to the gas inlet port (10c) via the flow rate controller (93) and to introduce reducing gas into the chamber (10) from the gas inlet port (10c). The diluting gas supply source (92) is configured to supply diluting gas to the gas inlet port (10d) via the flow rate controller (94) and to introduce diluting gas into the chamber (10) from the gas inlet port (10d). The film forming device (1) may supply a reducing gas from at least a reducing gas source (91) while depressurizing or depressurizing the inside of the chamber (10), and introduce it into the chamber (10) to perform the following film forming under a reducing gas atmosphere. The reducing gas is, for example, CO gas, H2 gas, CH4 gas, C3H8 gas, C4H 10 It is a gas comprising at least one gas selected from gases, etc. Additionally, a noble gas such as Ar gas, which is a diluent gas, may be supplied to the reducing gas from a diluent gas supply source (92) and introduced into the chamber (10), and the following film formation may be performed by introducing a gas combining the reducing gas and the noble gas into the chamber (10).

[0066] The film forming device (1) supplies a film forming material to the surface of a member (P) from a supply unit (80) and melts the supplied film forming material by a heat source (40) to form a film. FIG. 9 is a diagram illustrating an overview of film forming by the film forming device (1) according to the fourth embodiment. FIG. 9 shows a heating vessel (81) and a nozzle (82) constituting the supply unit (80). The heating vessel (81) contains silicon (S3) inside the vessel, and a coil (83) is provided along the circumference of the vessel. High-frequency power is supplied to the coil (83) from a high-frequency power source not shown. The heating vessel (81) heats the silicon (S3) by high-frequency induction caused by the high-frequency power flowing through the coil (83) and contains the silicon (S3) in a liquid state.

[0067] A nozzle (82) is connected to a heating vessel (81). For example, a water cooling pipe (84) is arranged on the outer circumference of the middle section of the nozzle (82) as it reaches the supply port (82a), so that the middle section is cooled. The liquid silicone (S3) flowing through the nozzle (82) is cooled in the middle section to become a solid, and is output from the supply port (82a) in a rod shape. A supply unit (80) is provided with a pair of conveying rollers (85) at the end of the supply port (82a). The pair of conveying rollers (85) are positioned between the rod-shaped silicone (S3) and are capable of controlling rotation by a motor not shown. The supply unit (80) is capable of adjusting the supply amount of silicone (S3) by changing the rotation speed of the conveying rollers (85).

[0068] Silicon (S3) ejected by the return roller (85) is supplied to the surface of the member (P). The heat source (40) irradiates an electron beam (40a) at a location where the silicon (S3) comes into contact with the surface of the member (P). As a result, the silicon (S3) is heated and melted by the electron beam (40a) emitted from the heat source (40), and a silicon film is formed.

[0069] The member (P) is configured to be movable within the upper surface of the mounting base (20) by means of a driving unit (23). The film forming device (1) moves the location where the silicon film is to be formed on the member (P) by moving the holding unit (21) that holds the member (P) by means of the driving unit (23), thereby forming a silicon film on the surface of the member (P).

[0070] In this way, the film forming device (1) according to the fourth embodiment can form a silicon film by suppressing the oxidation of silicon by forming a silicon film in a chamber (10) that has been depressurized. In addition, a silicon film can be formed by suppressing the oxidation of silicon by introducing a reducing gas, etc., into the chamber (10) from a gas inlet port (10c, 10d) while depressurizing the chamber (10) or while depressurizing it, and melting the film forming material under an atmosphere of the reducing gas.

[0071] As described above, the supply unit (80) melts the film material in a heating vessel (81) and flows the molten film material through a nozzle (82) to form it into a rod shape and supply it. By doing so, the film device (1) can stably supply the film material without interruption.

[0072] Although embodiments have been described above, the embodiments disclosed herein should be considered as illustrative in all respects and not restrictive. In practice, the embodiments described above may be implemented in various forms. Furthermore, the embodiments described above may be omitted, substituted, or modified in various forms without departing from the scope and intent of the claims.

[0073] For example, in each of the above embodiments, the case in which the film is formed by driving the holding member (21) within the upper surface of the mounting platform (20) by the driving member (23) was described as an example. However, the disclosed technology is not limited to this. The film forming device (1) may form the film while the driving member (23) drives the supply member (30, 60, 70, 80) and the heat source (40) to move relative to the mounting platform (20).

[0074] In addition, the second embodiment was described as an example in which a rod-shaped film material is grasped and supplied by two robot arms (61a, 61b). However, the disclosed technology is not limited to this. The film device (1) may also grasp and supply a rod-shaped film material by three robot arms.

[0075] In addition, in the film-forming device (1) of the above-described embodiment, sufficient preheating may be performed to control the temperature after film formation. For example, the film-forming device (1) may provide a heater in the area that contacts the member (P) of the retaining part (21), and control the temperature after film formation by means of the heater. For example, the temperature is controlled by determining, through experiments or the like, a temperature rate at which no crack occurs in the formed silicon film, and controlling the temperature to be lowered at the determined temperature rate. By doing so, cracks in the formed silicon film can be prevented.

[0076] Furthermore, the embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In practice, the above-described embodiments may be implemented in various forms. Additionally, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and intent of the appended claims. Explanation of the symbols

[0077] 1: Tabernacle apparatus 10: Chamber 10c, 10d: Gas inlet 20: Mounting stand 21: Vagina part 23: Driving part 30: Supply unit 40: Heat source 50: Exhaust section 60: Supply section 61a, 61b: Robot arm 70: Supply unit 71: Cartridge 72: Tube 73: Coil 74: Return roller 80: Supply unit 81: Heating vessel 82: Nozzle 85: Return roller 84: Water cooling pipe 83: Coil 90: Gas supply system 91: Reducing gas source 92: Dilution gas source P: Absence S1, S3: Silicone S2: Silicone rod

Claims

Claim 1 A film forming apparatus comprising: a chamber; an exhaust unit for depressurizing the inside of the chamber to a predetermined vacuum level; a holding unit disposed within the chamber and holding a film-forming member to be formed; a supply unit for supplying a film-forming material including silicon to the surface of the film-forming member to be formed; and a heat source capable of heating at the predetermined vacuum level and melting the supplied film-forming material. Claim 2 A film forming device according to claim 1, wherein the heat source further comprises a driving unit that heats a location where the film forming material is supplied from the supply unit to the surface of the film forming target member and drives the holding unit so that the location moves on the surface of the film forming target member. Claim 3 In claim 1, the exhaust unit occupies the inside of the chamber 10 -6 Torr or more 10 -2 A membrane forming device that reduces pressure to less than Torr. Claim 4 In claim 3, the exhaust unit occupies the inside of the chamber 10 -5 Torr or more 10 -3 A membrane forming device that reduces pressure to less than Torr. Claim 5 In claim 1, the heat source outputs an electron beam or a laser to melt the film material. Claim 6 A film forming device according to any one of claims 1 to 5, wherein the supply unit supplies the film forming material in the form of powder. Claim 7 A film forming device according to claim 6, wherein the supply portion is positioned above the retaining portion and receives the film forming material in powder form in a receiving portion that gradually narrows in width toward the lower portion, and supplies the film forming material from a supply port provided below the receiving portion and communicating with the receiving portion. Claim 8 A film forming device according to any one of claims 1 to 5, wherein the supply unit supplies the film forming material in the shape of a rod. Claim 9 In claim 8, the supply unit is a film forming device that supplies the film forming material from one or more directions. Claim 10 In claim 8, the above-mentioned supply unit is a film forming device that grips and supplies the rod-shaped film forming material by means of a plurality of robot arms. Claim 11 In claim 8, the supply unit is a film forming device that supplies the film forming material by means of rollers. Claim 12 A film forming device according to claim 8, wherein the supply unit supplies a plurality of rod-shaped film forming materials to a tube in sequence, heats each end of the rod-shaped film forming materials by a heating mechanism provided in the tube, and supplies the rod-shaped film forming materials by joining the ends of the rod-shaped film forming materials. Claim 13 In claim 8, the supply unit melts the film-forming material in a heating vessel and flows the molten film-forming material through a nozzle to form it into a rod shape and supplies it; a film-forming device. Claim 14 A film forming apparatus according to any one of claims 1 to 5, having a gas inlet for introducing a reducing gas into the chamber. Claim 15 A method for manufacturing a part having a film containing silicon, comprising: a process of holding a film-forming member to be formed in a holding portion disposed within a chamber; a process of depressurizing the chamber to a predetermined vacuum level; a process of supplying a film-forming material containing silicon from a supply portion to the surface of the film-forming member to be formed; and a process of melting the supplied film-forming material by a heat source capable of heating at the predetermined vacuum level. Claim 16 A method for manufacturing a part having a film comprising silicon, wherein the melting process further comprises a process of heating by the heat source a location on the surface of the film-forming member where the film-forming material is supplied, and driving the retaining member so that the location moves on the surface of the film-forming member. Claim 17 In claim 15, the depressurizing process comprises 10 inside the chamber -6 Torr or more 10 -2 A method for manufacturing a part having a film containing silicon that reduces pressure to less than Torr. Claim 18 In claim 17, the depressurizing process comprises 10 inside the chamber -5 Torr or more 10 -3 A method for manufacturing a part having a film containing silicon that reduces pressure to less than Torr. Claim 19 In claim 15, the heat source outputs an electron beam or a laser to melt the film material, a method for manufacturing a part having a film containing silicon. Claim 20 A method for manufacturing a part having a silicon-containing film, wherein, in any one of claims 15 to 19, the process further comprises introducing a reducing gas into the chamber from a gas inlet while depressurizing the chamber after or while depressurizing it, and the melting process melts the film material supplied under a reducing gas atmosphere.

Images