Packaging substrate and semiconductor package comprising the same

Abstract

A packaging substrate according to an embodiment includes a glass core and an insulating layer disposed on the glass core. The thickness of the glass core is 100 μm or more. The HEI value, which is the heat resistance elasticity index of the insulating layer in Equation 1 below, is 1.2 or more. [Equation 1] In the above Equation 1, Tg is the glass transition temperature (unit: °C), E is the elastic modulus measured at 23°C (unit: GPa), and CTE is the coefficient of thermal expansion (ppm / °C). In such cases, damage to the glass core that may occur during the process of forming the redistribution layer can be effectively suppressed.

Description

Technology Field

[0001] An embodiment relates to a packaging substrate and a semiconductor package including the same. Background Technology

[0003] In the production of electronic components, implementing circuits on a semiconductor wafer is called the front-end process (FE), and assembling the wafer into a state usable in an actual product is called the back-end process (BE), and the packaging process is included in the back-end process.

[0004] The four core technologies of the semiconductor industry that have enabled the rapid development of electronic products in recent years are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. While semiconductor technology is evolving into various forms, such as sub-micron and nano-scale linewidths, over ten million cells, high-speed operation, and significant heat dissipation, the technology to perfectly package these technologies has not yet been sufficiently supported. Consequently, the electrical performance of semiconductors is sometimes determined by packaging technology and the resulting electrical connections, rather than by the performance of the semiconductor technology itself.

[0005] Ceramic or resin is used as the material for packaging substrates. In the case of ceramic substrates, it is difficult to mount high-performance, high-frequency semiconductor devices due to high resistance or dielectric constant. While resin substrates allow for the mounting of relatively high-performance, high-frequency semiconductor devices, there are limitations in reducing the wiring pitch.

[0006] Recently, research is underway on applying silicon or glass as packaging substrates for high-end applications. By forming through-holes in silicon or glass substrates and applying conductive materials to these holes, the wiring length between the device and the motherboard can be shortened, and superior electrical characteristics can be achieved. Prior art literature

[0007] Korean Registered Patent No. 10-1396700 The problem to be solved

[0008] The objective of the embodiment is to provide a packaging substrate in which damage to the glass core that may occur during the process of forming a redistribution layer is effectively suppressed. means of solving the problem

[0010] A packaging substrate according to one embodiment of the present specification includes a glass core and an insulating layer disposed on the glass core.

[0011] The thickness of the above glass core is 100㎛ or more.

[0012] The HEI value, which is the heat resistance elasticity index of the above insulating layer in Equation 1 below, is 1.2 or higher.

[0013] [Equation 1]

[0014]

[0015] In the above Equation 1, Tg is the glass transition temperature (unit: °C), E is the elastic modulus measured at 23°C (unit: GPa), and CTE is the coefficient of thermal expansion (ppm / °C).

[0016] The HMI value, which is the heat resistance mechanical property index of the above insulating layer in Equation 2 below, may be 1.4 or higher.

[0017] [Equation 2]

[0018]

[0019] In the above Equation 2, Tg is the glass transition temperature (unit: °C), CTE is the coefficient of thermal expansion (ppm / °C), E is the elastic modulus of the insulating layer measured at 23°C (unit: GPa), T is the tensile strength of the insulating layer measured at 23°C (unit: MPa), and Eln is the elongation (%) of the insulating layer measured at 23°C.

[0020] The elastic modulus of the above insulating layer measured at 23°C may be 8 GPa or less.

[0021] The coefficient of thermal expansion of the above insulating layer may be 25 ppm / ℃ or less.

[0022] The glass transition temperature of the above insulating layer may be 160°C or higher.

[0023] The tensile strength of the above insulating layer measured at 23°C may be 80 MPa or less.

[0024] The above packaging substrate may include a first redistribution layer disposed on the glass core.

[0025] The first redistribution layer may include an electrically conductive layer and an insulating layer surrounding at least a portion of the electrically conductive layer.

[0026] The ratio of the thickness of the first redistribution layer to the thickness of the glass core may be 0.3 or more.

[0027] The above packaging substrate may further include a second redistribution layer disposed under the glass core.

[0028] The second redistribution layer may include the electrically conductive layer and the insulating layer surrounding at least a portion of the electrically conductive layer.

[0029] The ratio of the sum of the thickness of the first redistribution layer and the thickness of the second redistribution layer to the thickness of the glass core may be 0.5 or more.

[0030] The above insulating layer may include a curable resin and a filler.

[0031] The insulating layer may contain 65% by weight or more of the filler.

[0032] The above packaging substrate may include a first electrically conductive layer disposed in contact with the upper surface of the glass core.

[0033] The insulating layer may surround a portion of the first electrically conductive layer.

[0034] The ratio of the area occupied by the first electrically conductive layer on the upper surface of the glass core to the total area of ​​the upper surface of the glass core may be 80% or less. Effects of the invention

[0036] The packaging substrate of the embodiment can effectively suppress damage to the glass core that may occur during the process of forming the redistribution layer. Brief explanation of the drawing

[0038] Figure 1 is a conceptual diagram explaining the seware phenomenon. FIG. 2 is a cross-sectional view illustrating a packaging substrate according to one embodiment of the embodiment. FIG. 3 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the embodiment. Specific details for implementing the invention

[0039] Hereinafter, embodiments are described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Throughout the specification, similar parts are denoted by the same reference numerals.

[0040] Throughout this specification, the term “combination thereof” included in the Markush-type expression means one or more mixtures or combinations selected from the group consisting of the components described in the Markush-type expression, and means including one or more selected from the group consisting of said components.

[0041] Throughout this specification, terms such as “first,” “second,” or “A,” “B” are used to distinguish identical terms from one another. Additionally, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0042] In this specification, the “~” system may mean that the compound contains a compound corresponding to “~” or a derivative of “~”.

[0043] In this specification, the meaning that B is located on A means that B is located in direct contact with A or that B is located on A with another layer located between them, and is not interpreted as being limited to B being located in contact with the surface of A.

[0044] In this specification, the meaning of being connected to B on A means that A and B are directly connected or connected through other components between A and B, and unless otherwise specifically stated, it is not interpreted as being limited to a direct connection between A and B.

[0045] In this specification, singular expressions are interpreted to include singular or plural forms as interpreted in context unless otherwise specified.

[0046] In this specification, the shapes, relative sizes, angles, etc., of each component in the drawings are exemplary and may be exaggerated for illustrative purposes, and the rights are not interpreted as being limited to the drawings.

[0047] In this specification, "A and B are adjacent" means that A and B are located in contact with each other, or that A and B are located close to each other even if they are not in contact. Unless otherwise specified, the expression "A and B are adjacent" in this specification is not interpreted as being limited to A and B being in contact with each other.

[0048] In this specification, the term "fine line" means a line having a width of 5 μm or less, unless otherwise described, and exemplarily means a line having a width of 1 to 4 μm or less.

[0049] Unless otherwise specified in this specification, the physical property values ​​of each component within the packaging substrate are interpreted as being measured at room temperature. Room temperature is 20°C to 25°C.

[0051] FIG. 1 is a conceptual diagram illustrating the seware phenomenon. Hereinafter, the problem to be solved by the embodiment is explained with reference to FIG. 1.

[0053] An insulating layer can be formed by curing a film or composition for forming an insulating layer placed on a glass substrate in a high-temperature atmosphere. The process of placing and curing a film on a glass substrate to form a multilayer insulating layer on the glass substrate can be repeated. At this time, significant tensile stress may be applied to the glass substrate due to the thermal expansion and contraction of the insulating layer, and such stress may cause a SeWaRe phenomenon that causes the insulating layer to peel off or splits the glass substrate in the in-plane direction during the insulating layer formation process or the substrate dicing process.

[0054] The inventors of the embodiment experimentally confirmed that damage to the glass core can be effectively suppressed through means such as controlling the thickness of the glass core included in the packaging substrate and the heat resistance elasticity index of the insulating layer, and completed the embodiment.

[0056] The following describes specific examples of implementation.

[0058] FIG. 2 is a cross-sectional view illustrating a packaging substrate according to one embodiment of the embodiment. Hereinafter, an embodiment will be described with reference to FIG. 2.

[0060] Glass core

[0061] A packaging substrate (100) according to an embodiment may include a glass core (10).

[0062] The glass core (10) may have the shape of a glass substrate. The glass core (10) may be, for example, an alkali borosilicate plate glass, an alkali-free borosilicate plate glass, an alkali-free alkaline earth borosilicate plate glass, etc., and any plate glass used as an electronic component may be used. The glass core (10) may be a glass substrate for electronic devices, and for example, may be manufactured by Schott, AGC, Corning, etc., but is not limited thereto.

[0063] The glass core (10) may include a through via (not shown) penetrating in the thickness direction of the glass core (10).

[0064] A through-via consists of an internal space (not shown) and a via inner diameter surface (not shown) surrounding the internal space. The internal space refers to an empty space, and the via inner diameter surface refers to the surface of a glass core (10) formed inside the through-via.

[0065] The through-via may have a diameter that varies in the thickness direction of the glass core (10). The through-via may have a diameter that is virtually uniform in the thickness direction of the glass core (10).

[0066] The surface of the glass core (10) may include an upper surface and a side surface formed in the thickness direction of the glass core (10) connected to the upper surface. The surface of the glass core (10) may include a lower surface facing the upper surface.

[0067] The statement that the above side is formed in the thickness direction of the glass core (10) is interpreted to mean that the above side is not only perpendicular to the upper surface of the glass core (10), but also includes at least a portion of the above side forming an angle other than 90 degrees (angle of inclination) with respect to the upper surface.

[0068] The above side may be a flat surface or a curved surface.

[0069] The glass core (10) may include a cavity (not shown), which is a space formed by indentation inside.

[0070] The cavity may be formed by indenting a portion of the upper / lower side of the glass core (10) in the thickness direction of the glass core (10), or it may be penetrated in the thickness direction of the glass core (10).

[0071] A component can be mounted in the cavity so that the packaging substrate (100) and the component can be electrically connected. The component may be not only a semiconductor component such as a CPU, GPU, or memory chip, but also a capacitor component, a transistor component, an impedance component, or other modules. In other words, any semiconductor component mounted on a semiconductor device can be applied without limitation.

[0073] Physical properties of the insulating layer, etc.

[0074] The packaging substrate (100) may include an insulating layer (20) disposed on a glass core (10). At least a portion of the insulating layer (20) may be disposed in contact with the upper surface of the glass core (10).

[0075] The embodiment can control the thickness of the glass core (10) and the HEI value, which is the heat resistance elasticity index of Equation 1 below, which is a physical property related to the heat resistance and elasticity of the insulating layer (20).

[0076] [Equation 1]

[0077]

[0078] In the above Equation 1, Tg is the glass transition temperature (unit: °C), E is the elastic modulus measured at 23°C (unit: Gpa), and CTE is the coefficient of thermal expansion (ppm / °C).

[0079] The HEI value is a parameter that reflects the mechanical properties of the insulating layer (20) that can affect the heat resistance of the insulating layer (20) and the thermal stress of the glass core (10). When the heat resistance elasticity index of the insulating layer (20) is adjusted to within a preset range in the embodiment, even if the packaging substrate is repeatedly exposed to a high-temperature atmosphere, thermal stress below a certain level can be applied to the glass core (10), and the deterioration of the insulating layer (20) due to high temperature can be suppressed.

[0080] In addition, by controlling the thickness of the glass core (10), it is possible to suppress excessive concentration of tensile stress in a specific part of the glass core (10).

[0081] The glass transition temperature and coefficient of thermal expansion of the insulating layer (20) are measured using a thermomechanical analyzer (TMA) based on the standard JIS-C6481. When measuring, the tensile method is performed as specified in IPC-TM650, and the heating rate is applied at 10°C / min. The coefficient of thermal expansion is measured within the range of 25°C to 100°C.

[0082] The elastic modulus of the insulating layer (20) is measured in Pull mode at 23°C using a Universal Testing Machine (UTM). During measurement, the tensile speed was 1 mm / min and N=5 average conditions were used.

[0083] The HEI value of the insulating layer (20) may be 1.2 or higher. The HEI value may be 1.3 or higher. The HEI value may be 1.4 or higher. The HEI value may be 1.5 or higher. The HEI value may be 3 or lower.

[0084] The thickness of the glass core (10) may be 100 μm or more. The thickness may be 200 μm or more. The thickness may be 300 μm or more. The thickness may be 3000 μm or less. The thickness may be 2000 μm or less. The thickness may be 1000 μm or less.

[0085] In this case, the stress applied to the glass core (10) can be effectively reduced according to the change in ambient temperature, and the thermal deformation of the insulating layer (20) can be suppressed.

[0086] The HMI value, which is the heat resistance mechanical property index of Equation 2 below, of the insulating layer (20) may be 1.4 or higher.

[0087] [Equation 2]

[0088]

[0089] In the above Equation 2, Tg is the glass transition temperature (unit: °C), CTE is the coefficient of thermal expansion (ppm / °C), E is the elastic modulus (unit: Gpa) measured at 23°C of the insulating layer (20), T is the tensile strength (unit: Mpa) measured at 23°C of the insulating layer (20), and Eln is the elongation (%) measured at 23°C of the insulating layer (20).

[0090] The HMI value is a parameter that reflects the heat resistance and flexibility of the insulating layer (20). By controlling the HMI value of the insulating layer (20) within a preset range in the embodiment, the tensile stress acting on the glass core (10) due to the curing, thermal expansion, and thermal contraction of the insulating layer (20) can be stably reduced. In addition, the cured insulating layer (20) can maintain a stably cured state even if it is repeatedly exposed to a high-temperature environment.

[0091] The elongation of the insulating layer (20) is measured in Pull mode at 23°C using a Universal Testing Machine (UTM). During measurement, the tensile speed was measured at 1 mm / min and N=5 average conditions. The HMI value of the insulating layer (20) may be 1.4 or higher. The HMI value of the insulating layer (20) may be 1.5 or higher. The HMI value of the insulating layer (20) may be 1.6 or higher. The HMI value of the insulating layer (20) may be 3 or lower. In this case, the occurrence of a seware phenomenon in the glass core (10) during the process of forming the insulating layer (20) of a multilayer structure can be suppressed.

[0092] The elastic modulus of the insulating layer (20) measured at 23°C may be 8 GPa or less. The elastic modulus may be 7.5 GPa or less. The elastic modulus may be 7 GPa or less. The elastic modulus may be 4 GPa or more. In this case, even if the insulating layer (20) hardens or shrinks thermally, the stress acting on the glass core (10) can be reduced to a certain level or less.

[0093] The coefficient of thermal expansion of the insulating layer (20) may be 25 ppm / °C or less. The coefficient of thermal expansion may be 22 ppm / °C or less. The coefficient of thermal expansion may be 18 ppm / °C or less. The coefficient of thermal expansion may be 5 ppm / °C or more. In this case, the difference in thermal expansion and thermal contraction characteristics between the insulating layer (20) and the glass core (10) is controlled, thereby suppressing peeling of the insulating layer and damage to the glass core.

[0094] The glass transition temperature of the insulating layer (20) may be 160°C or higher. The glass transition temperature may be 163°C or higher. The glass transition temperature may be 165°C or higher. The glass transition temperature may be 167°C or higher. The glass transition temperature may be 170°C or higher. The glass transition temperature may be 200°C or lower. In this case, during the process of placing and curing a film for forming the insulating layer (20) on the insulating layer (20) after curing, the already cured insulating layer (20) may become rubberized, thereby preventing damage to the electrical connection.

[0095] The tensile strength of the insulating layer (20) measured at 23°C may be 80 MPa or less. The tensile strength may be 75 MPa or less. The tensile strength may be 70 MPa or less. The tensile strength may be 67 MPa or less. The tensile strength may be 40 MPa or more. In this case, the insulating layer (20) may have flexibility suitable for application on the glass core (10).

[0096] The dielectric constant of the insulating layer (20) at a frequency of 10 GHz may be 6 or less. The dielectric constant may be 5 or less. The dielectric constant may be 4 or less. The dielectric constant may be 0.5 or more.

[0097] The loss tangent of the insulating layer (20) at a frequency of 10 GHz may be 0.03 or less. The loss tangent may be 0.025 or less. The loss tangent may be 0.02 or less. The loss tangent may be 0.005 or more.

[0098] In this case, the redistribution layer including the insulating layer (20) can efficiently transmit signals.

[0099] The dielectric constant and loss tangent of the insulating layer (20) are measured at room temperature using a dielectric constant meter.

[0100] The embodiment can control the energy absorption rate of the insulating layer (20) within a specific range. Through this, controlled hydrophilicity is imparted to the insulating layer (20), thereby stably maintaining the insulation reliability between the electrically conductive layers within the redistribution layer.

[0101] The boiling absorption rate of the insulating layer (20) is measured in the following manner. A test specimen is prepared by cutting the insulating layer (20) to a width of 30 mm, a length of 30 mm, and a thickness of 50 μm. The test specimen is dried at 130°C for 30 minutes, and then its mass is measured. Afterward, the test specimen is immersed in boiling ion-exchanged water for 1 hour and then removed, and then immersed in room-temperature ion-exchanged water for 1 minute and then removed. Afterward, the moisture on the surface of the test specimen is removed, and then the mass of the test specimen is measured. The amount of change in mass of the test specimen before and after immersion is calculated relative to the mass of the test specimen before immersion, and this is used as the boiling absorption rate.

[0102] The boiling absorption rate of the insulating layer (20) per hour may be 2 weight% or less. The boiling absorption rate may be 1.5 weight% or less. The boiling absorption rate may be 1 weight% or less. The boiling absorption rate may be 0.1 weight% or more. In this case, it may contribute to providing excellent electrical reliability to the packaging substrate (100).

[0104] Composition of the insulating layer

[0105] The insulating layer (20) may include epoxy resin and a filler. The insulating layer (20) may include cured epoxy resin and a filler.

[0106] The epoxy resin may be any one selected from the group consisting of bisphenol-type epoxy resin, novolak-type epoxy resin, biphenyl-type epoxy resin, arylalkylene-type epoxy resin, tetraphenylolethane-type epoxy resin, naphthalene-type epoxy resin, anthracene-type epoxy resin, phenoxy-type epoxy resin, dicyclopentadiene-type epoxy resin, norbornene-type epoxy resin, and combinations thereof.

[0107] The insulating layer (20) may contain 10% by weight or more of epoxy resin. The insulating layer (20) may contain 15% by weight or more of epoxy resin. The insulating layer (20) may contain 20% by weight or more of epoxy resin. The insulating layer (20) may contain 35% by weight or less of epoxy resin. The insulating layer (20) may contain 32% by weight or less of epoxy resin. The insulating layer (20) may contain 29% by weight or less of epoxy resin. The insulating layer (20) may contain 25% by weight or less of epoxy resin.

[0108] The insulating layer (20) may include a filler. The filler may include an inorganic filler. The inorganic filler may be any one selected from the group consisting of barium sulfate, silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, silicon nitride, aluminum nitride, titanium oxide, and combinations thereof.

[0109] The average diameter of the inorganic filler may be 5 μm or less. The average diameter may be 4 μm or less. The average diameter may be 3 μm or less. The average diameter may be 2 μm or less. The average diameter may be 0.5 μm or more.

[0110] The maximum diameter of the inorganic filler may be 20㎛ or less. The maximum diameter may be 17㎛ or less. The maximum diameter may be 15㎛ or less. The maximum diameter may be 12㎛ or less. The maximum diameter may be 10㎛ or less. The maximum diameter may be 5㎛ or more.

[0111] In this case, the electrical reliability of the packaging substrate (100) can be reliably secured by helping to precisely form a fine wiring layer on the insulating layer (20).

[0112] The filler may further include organic fillers. Within the insulating layer (20), organic fillers may exhibit characteristics of attracting each other through interaction. These characteristics may help reduce the degree of thermal expansion of the insulating layer (20) as the temperature rises.

[0113] The organic filler may have a fine fiber shape with a diameter of 100 nm or less. The organic filler may include fine cellulose powder. The organic filler may be fine cellulose powder. Fine cellulose powder can be obtained from natural plant fiber raw materials such as wood, hemp, bamboo, and cotton. Specifically, it can be obtained by breaking down the fine cellulose powder by crushing the natural plant fiber raw material, high-temperature and high-pressure steam treatment, acid treatment, oxidation treatment, etc.

[0114] The insulating layer (20) may contain at least 65% by weight of filler. The insulating layer (20) may contain at least 68% by weight of filler. The insulating layer (20) may contain at least 71% by weight of filler. The insulating layer (20) may contain at least 75% by weight of filler. The insulating layer (20) may contain at least 90% by weight of filler. In this case, it may help to impart a relatively low thermal expansion rate and high flexibility to the insulating layer (20).

[0115] The filler may contain 1% to 25% by weight of an organic filler. The filler may contain 5% or more by weight of an organic filler. The filler may contain 10% or more by weight of an organic filler. The filler may contain 20% or less by weight of an organic filler. In this case, it can contribute to stably controlling the thermal expansion characteristics of the insulating layer (20).

[0116] The insulating layer (20) may further include other additives in addition to the components described above. The additives are not limited to those commonly applied in the field of packaging substrates. Examples of additives include curing agents, coloring agents, defoaming agents, etc.

[0118] electrical conductive layer

[0119] FIG. 3 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the embodiment. Hereinafter, an embodiment will be described with reference to FIG. 3.

[0120] The packaging substrate (100) includes a glass core (10) and an insulating layer (20) disposed on the glass core (10). The components of the packaging substrate (100) described in FIG. 1 above are applied as they are. The following description focuses on the parts that differ.

[0122] The packaging substrate (100) may include a first redistribution layer (40) disposed on a glass core (10). The first redistribution layer (40) may include an electrically conductive layer (30) and an insulating layer (20) surrounding at least a portion of the electrically conductive layer (30).

[0123] The electrically conductive layer (30) is a conductor that transmits an electrical signal. The electrically conductive layer (30) may include an electrically conductive material. For example, the electrically conductive layer (30) may include at least one of copper, nickel, aluminum, gold, or silver. Copper, etc., may be applied as the material of the electrically conductive layer (30).

[0124] The description of the physical properties and composition of the insulating layer (20) is omitted as it overlaps with the previous content.

[0125] The first redistribution layer (40) may be placed in contact with the upper surface of the glass core (10). Other components may be placed between the first redistribution layer (40) and the upper surface of the glass core (10).

[0126] In the first redistribution layer (40), an insulating layer (20) and an electrically conductive layer (30) may be arranged in a mixed manner. The first redistribution layer (40) may be formed in a form in which an electrically conductive layer (30) having a predetermined position and shape is embedded within the insulating layer (20). The electrically conductive layer (30) may be formed as fine wires in at least a part of the first redistribution layer (40). The first redistribution layer (40) may be electrically connected to terminals and elements, etc., located on the upper part of the packaging substrate (100).

[0127] The electrically conductive layer (30) may include a first electrically conductive layer (31) disposed in contact with the upper surface of the glass core (10). An insulating layer (20) may surround a portion of the first electrically conductive layer (31). The insulating layer (20) may surround at least a portion of the upper surface of the first electrically conductive layer (31). The insulating layer (20) may surround at least a portion of the side surface of the first electrically conductive layer (31).

[0128] The electrically conductive layer (30) may include a second electrically conductive layer (32) disposed on the glass core (10) without contacting the upper surface of the glass core (10). The insulating layer (20) may surround at least a portion of the second electrically conductive layer (32). The insulating layer (20) may surround the entire second electrically conductive layer (32).

[0129] The ratio of the area occupied by the first electrically conductive layer (31) on the upper surface of the glass core (10) to the total area of ​​the upper surface of the glass core (10) may be 80% or less.

[0130] During the formation process of the insulating layer (20), the glass core (10) and the first electrically conductive layer (31) may also be repeatedly exposed to a high-temperature atmosphere. The glass core (10) and the first electrically conductive layer (31) may exhibit different thermal expansion characteristics. This difference in characteristics may be one of the causes of cracking in the glass core (10) with high hardness during the process of thermal expansion and contraction of the glass core (10) and the first electrically conductive layer (31) together.

[0131] In this embodiment, by controlling the area occupied by the first electrically conductive layer (31) on the upper surface of the entire glass core (10), the stress of the glass core (10) caused by thermal expansion and contraction of the first electrically conductive layer (31) can be stably controlled.

[0132] The ratio of the area occupied by the first electrically conductive layer (31) on the upper surface of the glass core (10) to the total area of ​​the upper surface of the glass core (10) may be 80% or less. The ratio may be 75% or less. The ratio may be 70% or less. The ratio may be 30% or more. In this case, the frequency of cracks occurring in the glass core (10) can be effectively reduced.

[0133] The electrically conductive layer (30) may be disposed on the insulating layer (20). The electrically conductive layer (30) may be disposed in contact with the upper surface of the insulating layer (20).

[0134] The peel strength of the electrically conductive layer (30) on the upper surface of the insulating layer (20) may be 3 N / cm or more. The peel strength may be 3.5 N / cm or more. The peel strength may be 4 N / cm or more. The peel strength may be 10 N / cm or less. In this case, the insulating layer (20) can stably support, protect, and insulate the electrically conductive layer (30).

[0135] The peel strength of the electrically conductive layer (30) against the insulating layer (20) is measured using a bond tester according to the 180° peel test. The measurement speed (peeling speed) is set to 10 mm / s, the measurement distance (peeling distance) to 70 mm, and the measurement area is set to the area where no through vias are formed on the upper or lower surface of the glass core (10). For example, the peel strength value can be measured using a Condor Sigma bond tester from XYZ TEC.

[0136] The ratio of the thickness of the first redistribution layer (40) to the thickness of the glass core (10) may be 0.3 or more.

[0137] As the thickness increases as the first redistribution layer (40) has more layers, the stress on the glass core (10) due to the formation of the first redistribution layer (40) may increase. The packaging substrate (100) of the embodiment can suppress damage to the glass core (10) and provide a more highly integrated packaging substrate (100) by applying an insulating layer (20) in which heat resistance characteristics and mechanical properties are controlled within a range preset in the embodiment.

[0138] The ratio of the thickness of the first redistribution layer (40) to the thickness of the glass core (10) may be 0.3 or higher. The thickness ratio may be 0.4 or higher. The thickness ratio may be 0.5 or higher. The thickness ratio may be 0.6 or higher. The thickness ratio may be 1 or lower. In this case, a packaging substrate (100) having a high integration density of a multilayer structure can be provided.

[0139] The packaging substrate (100) may further include a second redistribution layer (not shown) disposed under the glass core (10).

[0140] The second redistribution layer may include an electrically conductive layer and an insulating layer surrounding at least a portion of the electrically conductive layer. The description of the electrically conductive layer and the insulating layer is omitted as it overlaps with the preceding content.

[0141] In the second redistribution layer, an insulating layer and an electrically conductive layer may be arranged in a mixed manner. The second redistribution layer may be formed in such a way that an electrically conductive layer having a predetermined position and shape is embedded within the insulating layer. The second redistribution layer may be electrically connected to terminals and a main board, etc., located at the bottom of the packaging substrate (100).

[0142] The ratio of the sum of the thickness of the first redistribution layer and the thickness of the second redistribution layer to the thickness of the glass core (10) may be 0.5 or more. The thickness ratio may be 0.6 or more. The thickness ratio may be 0.7 or more. The thickness ratio may be 0.8 or more. The thickness ratio may be 1 or more. The thickness ratio may be 3 or less. In this case, a pattern with high integration density can be implemented on the upper and lower sides of the glass core (10).

[0143] The packaging substrate (100) may further include a bump (not shown) disposed below the second redistribution layer.

[0144] The bump can be placed in a predetermined shape under the glass core (10). For example, the bump can be placed on a part of the packaging substrate (100) so as to come into contact with the main board, etc.

[0146] semiconductor package

[0147] A semiconductor package according to another embodiment of the example includes a packaging substrate and a device electrically connected to the packaging substrate.

[0148] The packaging substrate can be mounted on the main board and electrically connected to the main board.

[0149] The description of the packaging substrate and components is omitted as it overlaps with the preceding content.

[0151] Method for manufacturing a packaging substrate

[0152] A method for manufacturing a packaging substrate according to another embodiment of the embodiment is a method for manufacturing a packaging substrate including an insulating layer forming process of forming an insulating layer on a glass core.

[0153] The explanation of the glass core is omitted as it overlaps with the previous content.

[0154] If necessary, a glass core with an electrically conductive layer formed on the upper surface can be provided.

[0155] The insulating layer can be prepared by laminating a film for forming an insulating layer onto a glass core and then curing it, or by applying a composition for forming an insulating layer onto a glass core and then curing it.

[0156] The film for forming an insulating layer may include an epoxy resin and a filler. The film for forming an insulating layer may include an epoxy resin and a filler before curing.

[0157] The film for forming an insulating layer may contain 10% by weight or more of epoxy resin. The film for forming an insulating layer may contain 15% by weight or more of epoxy resin. The film for forming an insulating layer may contain 20% by weight or more of epoxy resin. The film for forming an insulating layer may contain 35% by weight or less of epoxy resin. The film for forming an insulating layer may contain 32% by weight or less of epoxy resin. The film for forming an insulating layer may contain 29% by weight or less of epoxy resin. The film for forming an insulating layer may contain 25% by weight or less of epoxy resin.

[0158] The description of epoxy resin and filler is omitted as it overlaps with the preceding content.

[0159] The film for forming the insulating layer may further include additives commonly applied in the field of build-up films. Examples of such additives include curing agents, colorants, and defoaming agents.

[0160] An insulating layer can be formed by curing a film for forming an insulating layer laminated on a glass core. At least a portion of the film for forming an insulating layer may be disposed in contact with the upper surface of the glass core. At least a portion of the film for forming an insulating layer may be disposed in contact with the upper surface of an electrically conductive layer disposed on the glass core.

[0161] Curing can proceed in two or more processes including a lamination process and a curing process.

[0162] In the lamination process, an exhaust atmosphere is formed, and a film for forming an insulating layer is placed in an area to be formed with an insulating layer, and then pressure is applied to the film to perform lamination.

[0163] During the lamination process, the vacuum pressure may be 2 hPa or higher. The vacuum pressure may be 3 hPa or higher. The vacuum pressure may be 10 hPa or lower.

[0164] The atmosphere temperature of the lamination process may be 50°C or higher. The atmosphere temperature may be 60°C or higher. The atmosphere temperature may be 100°C or lower. The atmosphere temperature may be 90°C or lower.

[0165] The pressure applied when laminating the film for forming an insulating layer may be 0.2 MPa or higher. The pressure may be 0.3 MPa or higher. The pressure may be 1 MPa or lower.

[0166] The time for applying pressure during lamination of the insulating layer forming film may be 10 seconds or more. The said time may be 20 seconds or more. The said time may be 90 seconds or less. During the lamination process, the laminated insulating layer forming film may be further pressed.

[0167] When pressing a film for forming a laminated insulating layer, the applied pressure may be 0.2 MPa or higher. The pressure may be 0.3 MPa or higher. The pressure may be 1 MPa or lower.

[0168] The time for applying pressure during lamination of the film for forming an insulating layer may be 10 seconds or more. The said time may be 20 seconds or more. The said time may be 90 seconds or less.

[0169] An insulating layer can be formed by curing a laminated insulating layer forming film during the curing process. The curing process may include two or more curing processes.

[0170] The atmosphere temperature of the first curing process may be 85°C or higher. The atmosphere temperature may be 90°C or higher. The atmosphere temperature may be 95°C or higher. The atmosphere temperature may be 150°C or lower.

[0171] The atmosphere temperature of the second curing process may be 120°C or higher. The atmosphere temperature may be 140°C or higher. The atmosphere temperature may be 160°C or higher. The atmosphere temperature may be 250°C or lower.

[0172] The first curing process may be performed for 10 minutes or more. The first curing process may be performed for 15 minutes or more. The first curing process may be performed for 20 minutes or more. The first curing process may be performed for 60 minutes or less.

[0173] The second curing process may be performed for 1 minute or more. The second curing process may be performed for 3 minutes or more. The second curing process may be performed for 20 minutes or less.

[0174] After forming an electrically conductive layer on an insulating layer formed as needed, another insulating layer can be formed on the electrically conductive layer to surround the electrically conductive layer to form a first redistribution layer.

[0175] The description of the electrical conductive layer and the first redistribution layer is omitted as it overlaps with the preceding content.

[0176] The electrically conductive layer can be formed using a dry method or a wet method.

[0177] The dry method is a method in which a seed layer is formed by sputtering in an area where an electrically conductive layer is to be placed, and an electrically conductive layer is formed by plating in an area where the seed layer is formed. When forming the seed layer, metals such as titanium, chromium, and nickel can be sputtered, and copper can be applied together with the above metals. Through sputtering, an anchoring effect occurs in which metal particles interact with the surface of the glass core or insulating layer, thereby improving the adhesion of the electrically conductive layer.

[0178] The wet method is a method in which a primer is applied to a portion where an electrically conductive layer is required, and then metal plating is performed. The primer may include a compound having functional groups such as amines. Depending on the degree of intended adhesion, the primer may include both a compound having functional groups such as amines and a silane coupling agent. When a silane coupling agent is applied, a primer layer can be formed by pre-treating the surface to be treated with the silane coupling agent and then applying a compound having amine groups to the pre-treated area.

[0179] After forming a seed layer or a primer layer, an electrically conductive layer can be formed by plating a metal. Copper plating may be applied when forming the electrically conductive layer, but is not limited thereto. Before metal plating, parts within the seed layer or primer layer where the formation of an electrically conductive layer is not required may be deactivated, or parts where the formation of an electrically conductive layer is required may be activated before plating. Methods for activation or deactivation may include light irradiation treatment using a laser of a specific wavelength, chemical treatment, etc. However, metal plating may be performed without applying activation or deactivation treatment, and then the electrically conductive layer may be patterned by etching according to a pre-designed shape.

[0180] After forming the electrically conductive layer, an insulating layer surrounding the electrically conductive layer can be formed. The insulating layer formed on the electrically conductive layer can be formed in the same way as the method described above.

[0181] If necessary, a second redistribution layer can be formed using the method applied to the formation of the first redistribution layer under the glass core.

[0182] The method for manufacturing a packaging substrate of an embodiment may further include a process of forming a connection terminal, a bump, a cover layer, etc., on the upper surface and / or lower surface of the packaging substrate, or mounting a device on the substrate.

[0184] The embodiments are described in more detail below through specific examples. The following examples are merely illustrative to aid in understanding the embodiments, and the scope of the embodiments is not limited thereto.

[0186] Manufacturing Example: Manufacturing of a packaging substrate

[0187] Example 1: CELLFIL MD200, a build-up film from Taiyo, was laminated on a glass substrate with a thickness of 400 μm. The build-up film contained 78 wt% silica, and the average particle size of the silica was controlled to 1.5 μm, and the maximum particle size of the silica was controlled to 8 μm.

[0188] After completing the first curing process by heat-treating the substrate with the build-up film laminated thereon at 100°C for 30 minutes, the substrate was heat-treated at 180°C for 5 minutes to complete the second curing process, and an insulating layer was prepared.

[0189] In the same way, an additional 7 insulating layers were formed on the insulating layer, and a total of 8 insulating layers were formed under the glass substrate. The thickness of the insulating layer formed on the glass core and the thickness of the insulating layer formed under the glass core were both measured to be 260 μm.

[0190] Subsequently, a packaging substrate was prepared by dicing a glass substrate with insulating layers formed on the top and bottom.

[0191] Comparative Example 1: A packaging substrate was prepared under the same conditions as Example 1, except that Ajinomoto’s New LE model was used as the build-up film.

[0192] Comparative Example 2: A packaging substrate was prepared under the same conditions as Example 1, except that Ajinomoto’s New 2 model was used as the build-up film.

[0193] Comparative Example 3: A packaging substrate was prepared under the same conditions as Example 1, except that the GX31 model of Ajinomoto was used as the build-up film.

[0194] Comparative Example 4: A packaging substrate was prepared under the same conditions as Example 1, except that the GXT62 model of Ajinomoto Corporation was used as the build-up film.

[0196] Evaluation Example: Measurement of physical properties of the insulating layer

[0197] The insulating layer from the packaging substrate for each example and comparative example was cut and used as a test specimen. The elastic modulus, tensile strength, and elongation of the insulating layer for each example and comparative example were measured using a universal test system. The ambient temperature was set to 23℃ when measuring the elastic modulus, tensile strength, and elongation.

[0198] The glass transition temperature of the insulating layer in the range of 20°C to 150°C for each example and comparative example was measured using a differential scanning calorimeter. In addition, the coefficient of thermal expansion of the insulating layer at 23°C for each example and comparative example was measured using a dynamic mechanical analysis method.

[0199] In addition, test specimens were prepared by cutting the insulating layer of each example and comparative example to a width of 30 mm, a length of 30 mm, and a thickness of 50 μm. The mass of the test specimen was measured after drying it at 130°C for 30 minutes. Subsequently, the test specimen was immersed in boiling ion-exchanged water for 1 hour and then removed, and then immersed in room-temperature ion-exchanged water for 1 minute and then removed. Afterward, the moisture on the surface of the test specimen was removed, and the mass of the test specimen was measured. The change in mass of the test specimen before and after immersion was calculated relative to the mass of the test specimen before immersion and was defined as the boiling absorption rate.

[0201] Then, the dielectric constant and loss tangent of the insulating layers of Example 1 and Comparative Example 3 were measured at room temperature using a dielectric constant meter.

[0203] The measured values ​​of the insulating layer for each example and comparative example, and the HEI values ​​of Equation 1 and HMI values ​​of Equation 2 calculated from the measured values ​​are listed in Tables 1 and 2 below.

[0204] [Equation 1]

[0205]

[0206] In the above Equation 1, Tg is the glass transition temperature (unit: °C), E is the elastic modulus measured at 23°C (unit: GPa), and CTE is the coefficient of thermal expansion (ppm / °C).

[0207] [Equation 2]

[0208]

[0209] In the above Equation 2,

[0210] The above Tg is the glass transition temperature (unit: °C), the above CTE is the coefficient of thermal expansion (ppm / °C), the above E is the elastic modulus of the insulating layer measured at 23°C (unit: GPa), the above T is the tensile strength of the insulating layer measured at 23°C (unit: MPa), and the above Eln is the elongation (%) of the insulating layer measured at 23°C.

[0212] Evaluation Example: Evaluation of whether the Seware phenomenon occurs

[0213] In the packaging substrate for each example and comparative example, whether the seware phenomenon, in which the glass core splits vertically, occurred was visually checked.

[0214] Upon verification, it was evaluated as Pass if no defects occurred and Fail if defects occurred.

[0216] The evaluation results for each example and comparative example are listed in Table 2 below.

[0218] HEI HMI Glass transition temperature (°C) Coefficient of thermal expansion (ppm / ℃) Elastic modulus (GPa) Tensile strength (MPa) Growth Rate (%) Example 1 1.83 1.90 172.5 14 6.75 62.5 2 Comparative Example 1 1.09 0.65 152 14 10 84 1.1 Comparative Example 2 0.72 0.80 152 15 14 112 2 Comparative Example 3 0.89 0.90 154 23 7.5 104 2.4 Comparative Example 4 0.56 1.14 156 37 7.5 125 5.4

[0219] Water absorption rate (weight%) genetic constant Loss tangent Evaluation of whether the Seware phenomenon occurs Example 1 Less than 1 3.5 0.014 Pass Comparative Example 1 0.4 - - Fail Comparative Example 2 0.2 - - Fail Comparative Example 3 0.6 3.1 0.013 Fail Comparative Example 4 - - - Fail

[0220] In Table 2 above, it was observed that in the case of Example 1, no damage occurred to the glass core, but in the cases of Comparative Examples 1 to 4, the Seware phenomenon occurred in all of them.

[0222] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0224] 100: Packaging substrate 10: Glass core 20: Insulating layer 30: Electrical conductive layer 31: First electrical conductive layer 32: Second electrical conductive layer 40: First cultivation layer 101: Prior art packaging substrate 11: Conventional glass substrate 21: Insulating layer of the prior art

Claims

Claim 1 A packaging substrate comprising a glass core and an insulating layer disposed on the glass core, wherein the thickness of the glass core is 100 μm or more, and the HEI value, which is the heat resistance elasticity index of the insulating layer according to Equation 1 below, is 1.2 or more, and comprises a first redistribution layer disposed on the glass core, wherein the first redistribution layer comprises an electrically conductive layer and the insulating layer surrounding at least a portion of the electrically conductive layer, the ratio of the thickness of the first redistribution layer to the thickness of the glass core is 0.3 or more, further comprising a second redistribution layer disposed under the glass core, wherein the second redistribution layer comprises the electrically conductive layer and the insulating layer surrounding at least a portion of the electrically conductive layer, and the ratio of the sum of the thickness of the first redistribution layer and the thickness of the second redistribution layer to the thickness of the glass core is 0.5 or more; [Equation 1] In the above Equation 1, Tg is the glass transition temperature (unit: °C), E is the elastic modulus measured at 23°C (unit: GPa), and CTE is the coefficient of thermal expansion (ppm / °C). Claim 2 In claim 1, a packaging substrate having an HMI value, which is a heat-resistant mechanical property index of the insulating layer in Equation 2 below, of 1.4 or higher; [Equation 2] In the above Equation 2, Tg is the glass transition temperature (unit: °C), CTE is the coefficient of thermal expansion (ppm / °C), E is the elastic modulus of the insulating layer measured at 23°C (unit: GPa), T is the tensile strength of the insulating layer measured at 23°C (unit: MPa), and Eln is the elongation (%) of the insulating layer measured at 23°C. Claim 3 A packaging substrate according to claim 1, wherein the elastic modulus of the insulating layer measured at 23°C is 8 GPa or less. Claim 4 A packaging substrate according to claim 1, wherein the coefficient of thermal expansion of the insulating layer is 25 ppm / ℃ or less. Claim 5 A packaging substrate according to claim 1, wherein the glass transition temperature of the insulating layer is 160°C or higher. Claim 6 A packaging substrate according to claim 1, wherein the tensile strength of the insulating layer measured at 23°C is 80 MPa or less. Claim 7 delete Claim 8 delete Claim 9 A packaging substrate according to claim 1, wherein the insulating layer comprises a curable resin and a filler, and the insulating layer comprises 65% by weight or more of the filler. Claim 10 A packaging substrate according to claim 1, comprising a first electrically conductive layer disposed in contact with the upper surface of the glass core, wherein the insulating layer surrounds a portion of the first electrically conductive layer, and the ratio of the area occupied by the first electrically conductive layer on the upper surface of the glass core to the total area of ​​the upper surface of the glass core is 80% or less.

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