Defect inspection system and semiconductor fabrication apparatus inclduing a defect inspection apparatus using the same

Abstract

The present invention relates to a semiconductor manufacturing device equipped with a defect inspection system and a defect inspection device using the same. A semiconductor manufacturing device of one embodiment may include a first processing chamber, a second processing chamber; a load lock chamber configured to accommodate a plurality of substrates to be loaded into the first or second processing chamber; and a transfer chamber located between the first processing chamber, the processing chamber, and the load lock chamber, for continuously transferring the substrates to the first processing chamber, the second processing chamber, or the load lock chamber. Such semiconductor manufacturing device may include a defect inspection device provided within the transfer chamber that detects defects in the substrates based on image signals of the substrates being transferred within the transfer chamber.

Description

Technology Field

[0001] The present invention relates to semiconductor manufacturing technology, and more specifically, to a defect inspection system capable of shortening process time and semiconductor manufacturing equipment equipped with a defect inspection device using the same. Background Technology

[0002] Generally, during the semiconductor manufacturing process, various defects such as organic contaminants, metal impurities, scratches, cracks, chipping, and broken parts may occur on the resulting semiconductor substrate. These defects are inspected as a separate step after each manufacturing process using a dedicated macro inspection device or an in-line automatic optical inspection device. The problem to be solved

[0003] Embodiments of the present invention provide a semiconductor manufacturing equipment equipped with a defect inspection system capable of shortening defect inspection time and a defect inspection device using the same. means of solving the problem

[0004] A defect inspection system according to an embodiment of the present invention may include: an information collection module positioned above a transport member and continuously photographing the surface of a substrate being transported; and a defect inspection module that generates an image signal based on the substrate information provided by the information collection module and detects defects in the substrate by comparing the image signal with a reference.

[0005] The information collection module may include a light source unit that provides incident light to the substrate; and a detection unit that collects reflected light reflected from the substrate and generates an electrical signal for the reflected light.

[0006] The information collection module may further include an emission changing unit located between the substrate and the sensing unit, which changes the path of the reflected light so as to focus the reflected light, which is reflected in various directions, to the sensing unit.

[0007] The light source unit can adjust the angle of incidence of the incident light based on the defect location of the substrate.

[0008] The light source unit includes a plurality of sub-light sources, and at least one of the wavelength, angle of incidence, and lighting time of the plurality of sub-light sources may differ. Additionally, each of the plurality of sub-light sources may provide the incident light to a different substrate.

[0009] The defect inspection module comprises: an image signal generation unit that generates an image signal using the substrate information provided from the information collection module; a storage unit that stores the substrate information in a normal state and the defect information of the previous substrate as a reference; and a defect detection unit that generates a defect detection signal by comparing the image signal and the reference.

[0010] A semiconductor manufacturing apparatus according to one embodiment of the present invention comprises: a first processing chamber, a second processing chamber; a load lock chamber configured to accommodate a plurality of substrates to be loaded into the first or second processing chamber; and a transfer chamber positioned between the first processing chamber, the processing chamber and the load lock chamber to continuously transfer the substrates to the first processing chamber, the second processing chamber or the load lock chamber, and may include a defect inspection device provided within the transfer chamber to detect defects in the substrates based on an image signal of the substrates being transferred within the transfer chamber.

[0011] The defect inspection device may include at least one continuous shooting unit that continuously photographs at least a portion of the substrate and outputs a continuous image signal by accumulating the captured signals.

[0012] The above defect inspection device may further include a lighting unit that provides lighting light to the continuous shooting unit. Effects of the invention

[0013] According to the present embodiment, since the process is performed during substrate transfer, no separate inspection process time is required, and it can be performed for the entire semiconductor manufacturing process. Accordingly, not only can the manufacturing process time be shortened, but defects and contamination can also be checked in real time after each unit process. As a result, a rapid response to the occurrence of defects can be made for each process. Brief explanation of the drawing

[0014] FIG. 1 is a configuration diagram showing a real-time substrate defect inspection system according to one embodiment of the present invention. FIG. 2 is a schematic diagram illustrating a defect inspection method according to one embodiment of the present invention. FIGS. 3 and 4 are drawings for explaining the operation of an output changing unit according to an embodiment of the present invention. FIG. 5 is a schematic block diagram showing semiconductor manufacturing equipment according to one embodiment of the present invention. FIG. 6 is a side view showing a part of semiconductor manufacturing equipment according to one embodiment of the present invention. FIGS. 7A and FIGS. 7B are drawings illustrating an example of a defect inspection device according to an embodiment of the present invention. FIG. 8 is a drawing showing an example of a defect inspection device according to another embodiment of the present invention. FIG. 9 is a flowchart for explaining a substrate defect inspection method according to one embodiment of the present invention. Specific details for implementing the invention

[0015] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity of description. Throughout the specification, the same reference numerals refer to the same components.

[0016] FIG. 1 is a configuration diagram showing a real-time substrate defect inspection system according to one embodiment of the present invention. FIG. 2 is a schematic diagram for explaining a defect inspection method according to one embodiment of the present invention.

[0017] Referring to FIGS. 1 and 2, a real-time substrate defect inspection system (10) according to one embodiment of the present invention may include an information collection module (100), an interface (180), a defect inspection module (200), a power supply module (300), and a control module (400).

[0018] The above information collection module (100) may include a light source unit (110), a detection unit (130), and an emission change unit (150).

[0019] The light source unit (110) can irradiate incident light (L1) onto a substrate (W) for inspection. In this embodiment, the term "substrate (W)" may refer to a bare wafer as well as a substrate product having at least one device layer. The incident light (L1) may be irradiated onto the surface of the substrate (W) at a predetermined angle of incidence (θ) and then reflected. "L2" in the drawing may indicate reflected light reflected from the surface of the substrate (W). Such a light source unit (110) may be provided, for example, in a semiconductor manufacturing device (not shown) located in the direction of transport of the substrate (W), or in a semiconductor manufacturing device where a subsequent process is to be performed.

[0020] The light source unit (110) may include a line light source, a laser light source, a light emitting diode (LED) light source, a mixed light source including a plurality of different characteristic beams, or a combination thereof.

[0021] For example, when incident light (L1) is irradiated in a line shape (or stripe shape), the incident light (L1) can be concentrated on the inspection area of ​​the substrate (W). Accordingly, unnecessary noise can be reduced during the inspection process.

[0022] Additionally, the light source unit (110) may irradiate incident light (L1) using a known line scan method. Additionally, the light source unit (110) may irradiate incident light (L1) having at least one wavelength. In one embodiment, incident light (L1) of different wavelengths may be irradiated depending on the physical properties of the upper surface of the substrate (L1), for example, the inspection target layer (not shown) formed on the upper surface of the substrate. As an example, the light source unit (110) may include multiple sub-light sources (not shown) having multiple wavelengths to irradiate incident light (L1) of various wavelengths. At this time, the multiple sub-light sources may be driven selectively, or at least one sub-light source may be driven simultaneously. As an example, when the inspection target layer is a metal layer, the light source unit (110) may irradiate incident light (L1) of a wavelength of 680 to 780 nm. In addition, if the inspection target layer is a silicon nitride film, incident light (L1) with a wavelength of 480 to 580 nm can be irradiated. In addition, if the inspection target layer is a silicon oxide film, incident light (L1) with a wavelength of 380 to 480 nm can be irradiated. That is, the light source unit (110) of the present embodiment can select a sub-light source of an appropriate wavelength according to the type of thin film and its thickness generated in the previous step, and irradiate incident light (L1) using the selected sub-light source.

[0023] Additionally, the light source unit (110) of the present embodiment may include a white light source, a blue light source, and a yellow light source, and a light source of an appropriate color may be selected according to the previous process step. As an example, if the previous process is a photolithography process, a yellow light source may be selected, and if the previous process is a diffusion process, a blue light source may be selected. However, it is not limited thereto, and at least one light source of various wavelengths and colors may be selected.

[0024] In addition, the light source unit (110) of the present embodiment can adjust the angle of incidence of the incident light to between 0 and 90° with respect to the surface of the substrate (W). As described above, when the light source unit (110) includes a plurality of sub-light sources, each sub-light source can irradiate incident light at the same angle of incidence or irradiate incident light at different angles of incidence.

[0025] Additionally, the light source unit (110) can irradiate incident light (L1) onto a plurality of substrates (W) that are supplied continuously. For example, if the light source unit (110) includes a first and a second sub-light source, the first sub-light source can irradiate incident light (L1) onto the first substrate with a first angle of incidence, and the second sub-light source can irradiate incident light (L1) onto the second substrate that is transferred after the first substrate with a second angle of incidence. The first angle of incidence and the second angle of incidence may be the same or different. As an example, based on the defect location of the first substrate and the first angle of incidence of the first sub-light source, the second angle of incidence of the second sub-light source irradiating incident light (L1) onto the subsequent second substrate may be adjusted. The irradiation time of the incident light (L1) of the first sub-light source and the second sub-light source may be the same or different. For example, based on the degree of defects in the preceding first substrate, the incident light irradiation time of the subsequent second substrate may be varied.

[0026] The above-described detection unit (130) can collect reflected light (L2) reflected from the substrate (W). In one embodiment, the detection unit (130) may include at least one detection element such as a Charge Coupled Device (CCD), a CMOS Image Sensor (CIS), a photomultiplier tube, an avalanche detector, a photodiode detector, a streak camera, a silicon detector, an area scan camera, and a line scan camera. The CIS may include a photosensitive time delay integration (TDI) pixel array and a CCD pixel array for area detection. The area scan camera can detect colored defects or colored defects on the substrate with high sensitivity. The line scan camera can detect fine defects of several micrometers in size with high sensitivity. Additionally, the line scan camera of this embodiment can collect reflected light (L2) using a time delay integration (TDI) scanning method. A line scan camera of this type will be referred to as a TDI camera below. A TDI camera can capture an inspection area of ​​a substrate (W) multiple times and superimpose the captured image information to generate a superimposed signal. For example, a TDI camera can continuously capture images from the first capture point to the last capture point of a substrate (W) being transported at a constant speed, and accumulate the signals collected through the capture to collect high-resolution image information, thereby enabling the identification of microscopic defects of several micrometers in size. Such a TDI camera may include at least one optical element, such as a lens.

[0027] In one embodiment, the sensing unit (130) may be composed of a combination of a plurality of image sensors, a TDI camera, and an area scan camera.

[0028] The sensing unit (130) of the present embodiment may include any device that generates an electrical signal corresponding to the reflected light (L2) based on the intensity of the reflected light (L2). That is, the sensing unit (130) can receive the reflected light reflected from the substrate being transported as an analog signal and convert the received analog signal into an electrical signal.

[0029] In addition, the sensing unit (130) of the present embodiment can receive reflected light (L2) continuously from a plurality of substrates (W) that are continuously transported, and then generate an electrical signal for the reflected light (L2) reflected from each substrate (W) and transmit it to the defect inspection module (200).

[0030] A sensing unit (130) according to one embodiment may be positioned at a predetermined distance from the surface of the substrate (W). The sensing unit (130) may be fixed or driven parallel to the direction of transport of the substrate (W).

[0031] The above-described sensing unit (130) may include a plurality of sensing elements to continuously receive reflected light (L2) from a plurality of substrates (W). Additionally, the above-described sensing unit (130) may output a sensing signal having a binary code based on the reflected light (L2).

[0032] The above-mentioned emission change unit (150) may be positioned between the detection unit (130) and the substrate (W) to be inspected. The emission change unit (150) may change the path of reflected light (L2). The emission change unit (150) may focus reflected light (L2) from various directions reflected from the substrate (W) into one direction and transmit it to the detection unit (130). As an example, the emission change unit (150) may refract or reflect reflected light (L2) traveling in various diagonal directions on the surface of the substrate (W) toward the receiving unit of the detection unit (130). As an example, the emission change unit (150) of the present embodiment may include a prism. "A" in FIG. 2 may represent the angle of inclination between the average value of the incident light (L1) and the reflected light (L2). For example, when the inclination angle (A) is in the range of 45 to 135°, the intensity of the reflected light (L2) can reach a maximum value, and the correction of the inclination angle (A) can be achieved by driving the output change unit (150).

[0033] FIGS. 3 and 4 are drawings for explaining the operation of an output changing unit according to an embodiment of the present invention.

[0034] Referring to FIG. 3, the emission changing unit (150) may include a plurality of optical surfaces (151a to 151d). As an example, the emission changing unit (150) may include an incident surface (151a), an emission surface (151b), a reflective surface (151c), and a side surface (151d) that contacts the incident surface (151a), the emission surface (151b), and the reflective surface (151c). The emission changing unit (150) of the present embodiment can adjust the inclination angle (A) by changing the positions of the incident surface (151a), the emission surface (151b), the reflective surface (151c), and the side surface (151d) through positional movement such as rotation.

[0035] The above incident surface (151a), exit surface (151b), and reflection surface (151c) may have a rectangular structure of different sizes, and the above side surface (151d) may have a trapezoidal shape. Additionally, the emitted light from the exit changing part (150) may proceed in a direction (C2) perpendicular to the surface of the exit surface (151b).

[0036] When the angle of incidence of the incident light (L1) irradiated onto the substrate (W) is 45 to 60°, the position of the emission changing part (150) can be adjusted so that the angle of inclination (A) between the normal (C1) perpendicular to the incident plane of the incident light (L1) and the surface of the substrate (W) and the direction of propagation (C2) of the emitted light is maintained at 75 to 135°. Accordingly, the reflected light (L2) can be efficiently focused within the detection part (130).

[0037] In addition, when the angle of incidence of the incident light (L1) is 35 to 55°, the position of the emission change part (150) can be adjusted so that the angle of inclination (A) between the normal (C1) and the direction of travel (C2) of the emission light is maintained at 45 to 105°.

[0038] Although not shown in the drawing, the detection unit (130) may further include an intensity measuring unit for reflected light (L2). The intensity measuring unit may detect the maximum intensity range of the reflected light (L2). The control module (400) may receive incident light (L1) information from the light source unit (110) and maximum intensity information of the reflected light (L2) provided by the intensity measuring unit of the detection unit (130). Based on the incident light (L1) information and the maximum intensity information of the reflected light (L2), the control module (400) may change or fix the position of the emission change unit (150).

[0039] The position change, i.e., rotational movement of the above-mentioned output changer (150) can be performed by a first drive unit (153) and a second drive unit (155). The first drive unit (153) and the second drive unit (155) may be provided to face each other on the side (151d) of the above-mentioned output changer (150). Such first drive unit (153) and second drive unit (155) may each include an N-pole magnet and a S-pole magnet. For example, the first drive unit (153) may have a structure in which an N-pole magnet and a S-pole magnet are stacked. The second drive unit (155) may have an N-pole magnet and a S-pole magnet arranged side by side in the transverse direction. The output changer (150) can be rotated in the A1 direction by driving at least one of the first and second drive units (153, 155).

[0040] “P” in the drawing represents patterns formed on the upper surface of the substrate (W). For example, when the extension direction of the pattern (P) is parallel to the emission surface (151b) of the emission change part (150), defect information of the pattern (P) can be easily obtained.

[0041] Meanwhile, the patterns (P) formed on the upper surface of the substrate (W) may include a plurality of patterns (not shown) that extend in various forms in addition to the patterns (P) that are parallel in one direction as shown in FIG. 3 and FIG. 4, and in some cases, as shown in FIG. 4, the substrate (W) may be transported in a tilted state in the D1 direction. When the extension directions of the patterns (P) are varied or the substrate (W) enters in a tilted state, the position of the output surface (151b) can be adjusted by considering the tilt angle of the substrate (W), the extension direction of the patterns located at the top, or the extension direction of the plurality of patterns. When considering such various variables, the first and second driving units (153, 155) can be driven simultaneously to change the position of the output changing unit (150) in the A1 and A2 directions of the drawing. At this time, the first and second driving units (153, 155) can be driven based on a control signal provided by the control module (400). As an example, the control signal can be transmitted to the first and second driving units (153, 155) through the interface (180).

[0042] Optical information of the substrate (W) collected through the information collection module (100) can be transmitted to the defect inspection module (200) and the control module (400) through the interface (180) as described above. The interface (180) is connected between the information collection module (100), the inspection module (200), the power supply module (300), and the control module (400), so that appropriate signals can be transmitted between each module.

[0043] The defect inspection module (200) can determine whether there is a defect in the substrate (W) based on the optical information provided by the information collection module (100).

[0044] The defect inspection module (200) may include an image generation unit (210), a storage unit (230), and a defect detection unit (250). Additionally, the defect inspection module (200) may further include a preprocessing unit (270) and a display unit (290).

[0045] The image generation unit (210) can generate an image signal by processing optical information transmitted through the interface (180). The image generation unit (210) can receive an electrical signal, i.e., a digital signal, collected from the information collection module (100), amplify it, and output it as an image signal of the substrate (W). The image signal can be generated, for example, based on the pixel-by-pixel electrical signal of the CIS.

[0046] The storage unit (230) can store optical information of the substrate (W) collected by the information collection module (100) and an image signal generated by the image generation unit (210) based on the optical information. Additionally, the storage unit (230) can store optical information of a defect-free substrate (W) and an image signal generated based on the optical information.

[0047] Accordingly, the storage unit (230) can provide optical information and image signals of a defect-free substrate (W) as a reference, or provide optical information and image signals of a substrate (W) transferred previously as a reference.

[0048] Such a storage unit (230) may include various non-transitory computer-readable media. The storage unit (230) may transmit stored information to a management server (not shown) or a manager terminal. The non-transitory computer-readable media may be, for example, a medium that stores data semi-permanently and is readable by a device. As an example, the non-transitory computer-readable media may include CDs, DVDs, hard disks, Blu-ray discs, USBs, memory cards, ROMs, etc.

[0049] The defect detection unit (250) can determine whether there is a defect in the substrate (W) to be inspected by comparing the reference and the image signal. As an example, the optical information and the image signal may be separated into pixel units. Accordingly, the defect detection unit (250) can detect whether there is a defect in a specific pixel area by comparing the pixel-unit image signal (or optical information) corresponding to the reference with the pixel-unit image signal (or optical information) of the substrate (W) to be inspected. In addition, the defect detection unit (250) can output a defect detection signal by additionally considering other environmental factors other than defects, such as lighting intensity.

[0050] The defect detection unit (250) can detect defects at the pixel level using a known line profile method. A line profile method is a method of representing the characteristics of an image as lines. A line profile method can analyze the entire image or a certain section of the image. By analyzing the lines representing these image characteristics, the defect detection unit (250) can recognize the starting coordinates of each unit pixel, but is not limited thereto. The defect detection unit (250) can determine various types of defects, such as contamination, impurities, scratches, cracks, chipping, and damage, based on the intensity, color, size, luminance, and brightness of the image signal. As an example, the angle of incidence of the incident light ( When ) is 45 to 60°, if a defect is detected, the angle of incidence ( If the angle is adjusted to 35 to 55° and the distortion of the reflected light (L2) becomes more severe, it can be determined as a protruding defect, such as contamination. On the other hand, if the reflected light (L2) differs from the reference but is not distorted, it can be determined as a defect inside the substrate, such as a crack defect.

[0051] The defect detection signal generated by the defect detection unit (250) is transmitted to the control module (400) so that the location and type of the defect can be determined. The control module (400) can determine the subsequent processing of the substrate (W) to be inspected and the inspection conditions of the subsequent substrate (W) (e.g., driving conditions of the light source unit (110), the detection unit (130), and the output change unit (150).

[0052] The above preprocessing unit (270) can analyze defects more accurately by self-correcting distorted or warped information, such as noise components that do not affect defect detection, of the reference image signal and the image signal of the substrate (W) to be inspected. In addition, the above preprocessing unit (270) can match the image direction so that the scan direction of the substrate (W) to be inspected and the scan direction of the reference are aligned.

[0053] The above display unit (290) can display a defect detection result based on a defect detection signal. The defect detection result can be displayed (output) as a UI (User Interface) or GUI (Graphic User Interface), etc.

[0054] The above power supply module (300) can provide power to each module (100, 180, 200, 400) constituting the system (10) so that it operates.

[0055] The control module (400) can control each module (100, 180, 200, 300) constituting each of the system (10). In one embodiment, the control module (400) receives a defect detection signal from the defect inspection module (200), determines the location of the defect, the size of the defect, the type and number of defects, and synthesizes them to generate a defect detection result and transmit it to the display unit (290). In addition to the defect information mentioned above, the defect detection result may determine whether to proceed with subsequent work on the inspection target substrate, including whether to rework or discard it.

[0056] Additionally, the control module (400) can adjust the driving conditions of the light source unit (110), the detection unit (130), and the emission change unit (150) in order to more closely determine whether a defect of the same reason has occurred in a subsequent substrate (W) based on the defect detection result of the substrate (W) to be inspected.

[0057] The control module (400) may include, for example, a microprocessor and may be connected wirelessly or via a wired connection. Based on the fault detection results, the control module (400) may further generate a fault detection collection (FDC) interlock signal. Accordingly, if a serious defect occurs in the substrate (W), the subsequent process may be interlocked to prevent further progress.

[0058] FIG. 5 is a schematic block diagram showing semiconductor manufacturing equipment according to one embodiment of the present invention. FIG. 6 is a side view showing a part of semiconductor manufacturing equipment according to one embodiment of the present invention.

[0059] Referring to FIGS. 5 and 6, the semiconductor manufacturing equipment (20) of the present embodiment may include a first processing chamber (CH1), a second processing chamber (CH2), a transfer chamber (TC), a loadrock chamber (LC), and a defect inspection device (50).

[0060] The first processing chamber (CH1) and the second processing chamber (CH2) may perform the same process or different processes.

[0061] The load lock chamber (LC) may include a plurality of substrates (W) to be processed or a plurality of processed substrates (W). The plurality of substrates (W) may be accommodated in a FOUP (Front Opening Unified Pod :F).

[0062] The transfer chamber (TC) may be located between the first processing chamber (CH1), the second processing chamber (CH2), and the load lock chamber (LC). The transfer chamber (TC) may include a transfer member (30), such as a robot arm or a conveyor belt, inside. For example, the transfer member (30) may sequentially transfer a semiconductor substrate (W) on which a first process has been performed in the first processing chamber (CH1) to the FOUP (F) of the load lock chamber (LC). Additionally, the transfer member (30) may sequentially transfer a semiconductor substrate (W) contained in the FOUP (F) of the load lock chamber (LC) to the first processing chamber (CH1) or the second processing chamber (CH2). The transfer chamber (TC) and the first processing chamber (CH1), and the transfer chamber (TC) and the second processing chamber (CH1) are separated by chamber walls (CW), and each chamber wall (CW) is provided with a gate (G), so that a substrate (W) can be transferred through the gate (G).

[0063] The defect inspection device (50) may be provided within the transfer chamber (TC). The defect inspection device (50) may include a part of the defect inspection system (10) of FIG. 1. The defect inspection device (50) may be provided at a position spaced a certain distance from the surface of the substrate (W) to be inspected. The defect inspection device (50) may be positioned at the leading edge of the substrate being transferred so that line scanning of the front surface of the substrate (W) can be performed during the transfer of the substrate (W).

[0064] The defect inspection device (50) may include a continuous shooting unit (55). The continuous shooting unit (55) may continuously shoot a substrate (w) in a line shape, accumulate the captured signals, and output a continuous image signal. This continuous shooting unit (55) may include the configuration of the detection unit (130) of FIG. 1 and the configuration of the image signal generation unit (210). The continuous shooting unit (55) of the present embodiment may include, for example, a TDI camera. In some cases, the TDI camera may have at least one optical lens at its tip.

[0065] The defect inspection device (50) may further include a lighting unit (52) so that the continuous shooting unit (55) can output a high-resolution image signal. The lighting unit (52) may correspond to the light source unit (110) of FIG. 1 described above. The lighting unit (52) can improve the focusing characteristics of the continuous shooting unit (55) by providing lighting light to the shooting position of the continuous shooting unit (55). The lighting unit (52) can adjust the incident angle of the lighting light. In addition, the lighting unit (52) may include a plurality of sub-light sources (52a, 52b). Each sub-light source (52a, 52b) may differ in at least one of the incident angle, illuminance, and wavelength of the lighting light. In addition, the sub-light sources (52a, 52b) may be selectively turned on according to the above differences. In addition, the flashing times of the sub-light sources (52a, 52b) may differ from each other.

[0066] FIGS. 7A and FIGS. 7B are drawings illustrating an example of a defect inspection device according to an embodiment of the present invention.

[0067] As illustrated in FIG. 7a, the continuous shooting unit (55) and the lighting unit (52) of the defect inspection device (50) may be provided at a position forming a predetermined angle on the surface of the substrate (W). The continuous shooting unit (55) is configured to be movable so as to be able to photograph the substrate (W) at various positions.

[0068] As illustrated in FIG. 7b, the defect inspection device (50) may include first and second continuous shooting units (55a, 55b) and an illumination unit (52). For example, the first continuous shooting unit (55a) may be positioned in a direction perpendicular to the surface of the substrate (W), and the second continuous shooting unit (55b) may be positioned in a direction inclined to the surface of the substrate (W). The first and second continuous shooting units (55a, 55b) may be provided at different locations to detect different areas of the substrate (W).

[0069] In this way, by changing the position of the continuous shooting unit (55, 55a, 55b), various sides of the substrate (W) can be photographed, and various types of defects can be measured.

[0070] Referring again to FIG. 6, the defect inspection device (50) may further include an emission changing unit (150) that changes the path of light emitted from the substrate (W) and focuses it to a continuous shooting unit (55). The emission changing unit (150) may be identical to the configuration of FIG. 1.

[0071] FIG. 8 is a drawing showing an example of a defect inspection device according to another embodiment of the present invention.

[0072] Referring to FIG. 8, the continuous shooting unit (55) may be positioned to face the emission surface (151b) of the emission change unit (150), the first sub-light source (52a) may be positioned on the first side (151d) of the emission change unit (150), and the second sub-light source (52b) may be positioned on the second side (151d) of the emission change unit (150). In this way, the plurality of sub-light sources (52a, 52b) may be provided at different positions for each substrate (W) and illuminated simultaneously to improve the resolution of the continuous shooting unit (55).

[0073] The storage unit (230) and defect detection unit (250) constituting the defect inspection module (200) of FIG. 1 may be provided within the control module (400). Accordingly, the control module (400) having the storage unit (230) and defect detection unit (250) can generate a defect detection signal by comparing an image signal received through the continuous shooting unit (55) with a reference image signal stored in the storage unit (230).

[0074] FIG. 9 is a flowchart for explaining a substrate defect inspection method according to one embodiment of the present invention.

[0075] Referring to FIG. 9, a first image signal of the surface of a substrate (W) can be generated (S1). The step of generating the first image signal (S1) can be performed within the transfer chamber (TC) while the substrate is being transferred from the load lock chamber (LC) to the first processing chamber (CH1). The first image signal may be, for example, an image signal of the substrate (W) before processing. The first image signal may be generated by the operation of the information collection module (100) and the defect inspection module (200) of FIG. 1. Additionally, the first image signal may be generated by the defect inspection device (50) of FIG. 6.

[0076] After that, a first process can be performed on the substrate (W) (S2). The first process can be performed, for example, in a first processing chamber (CH1).

[0077] A second image signal of the substrate (W) on which the first process has been performed is generated (S3). An information collection module (100) and a defect inspection module (200) or a defect inspection device (50) provided in the transfer chamber (TC) can generate a second image signal by photographing the surface of the substrate (W) on which the first process has been performed.

[0078] Based on the second image signal, a defect detection signal is generated (S4). The defect detection signal may be generated in a control module (400) including a defect inspection module (200) or a defect detection unit (250). The defect detection signal may output a defect detection signal if an image difference greater than a threshold occurs by comparing the first and second image signals. Additionally, the defect detection signal may output a defect detection signal if an image difference greater than a threshold occurs by comparing the reference image signal and the second image signal.

[0079] Based on the defect detection signal, it is determined whether to perform the second process (S5).

[0080] Based on the defect detection signal, if the defect is not critical or can be repaired through additional processes such as cleaning, a second process may be performed (S6). On the other hand, if an incurable defect occurs on the substrate (W) based on the defect detection signal, the substrate may be discarded (S7).

[0081] In the above S6 step, if a recovery process is performed before the second process, a defect inspection can be further performed through an image signal between the recovery process and the second process.

[0082] At this time, the threshold, i.e., the defect detection index, which determines whether to perform the second process, the repair process, or discard, may include the number of defects, the size of the defects, and the type of defects. Distortion caused by defects can be measured by the mean square error (MSE) between the reference image signal and the inspection image signal.

[0083] The number of defects above refers to independently detected defects, and a defect caused by a single factor in at least one pixel of an image signal can be set as one. The size of the defect may be based on the number of pixels containing the defect. The type of defect may be determined from the shape of the distorted reflected light.

[0084] Since the defect inspection method of the present embodiment is performed during substrate transfer, no separate inspection process time is required, and it can be performed throughout the entire semiconductor manufacturing process. Accordingly, not only can the manufacturing process time be shortened, but defects and contamination can also be checked in real time after each unit process. As a result, a rapid response to the occurrence of defects can be made for each process.

[0085] As described above, the detailed description of the preferred embodiments of the present invention disclosed is provided to enable those skilled in the art to implement and practice the present invention. Although the present invention has been described with reference to preferred embodiments, those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the scope of the invention. For example, those skilled in the art may utilize each configuration described in the embodiments described above in combination with one another. Accordingly, the present invention is not intended to be limited to the embodiments shown herein, but to be given the broadest scope consistent with the principles and novel features disclosed herein. Explanation of the symbols

[0086] 10: Defect Inspection System 20: Semiconductor Manufacturing Equipment 30: Transfer member 50: Defect inspection device 52: Lighting Unit 55: Continuous Shooting Unit 100: Information gathering module 110: Light source unit 130 : Detector 150 : Ejection changer 200: Defect inspection module 210: Image generation unit 230: Storage unit 250: Defect detection unit 270 : Preprocessing unit 290 : Display unit 300: Power supply module 400: Control module

Claims

Claim 1 A defect inspection system comprising: an information collection module positioned above a transfer member and continuously capturing the surface of at least one substrate moving between at least two devices while moving together with the transfer member; and a defect inspection module that generates an image signal based on information of the substrate provided by the information collection module and detects defects in the substrate by comparing the image signal with a reference, wherein the information collection module comprises: a light source unit that provides incident light to the substrate; and a detection unit configured to collect reflected light reflected from the substrate, generate an electrical signal for the reflected light, and move along the direction of movement of the substrate. Claim 2 delete Claim 3 A defect inspection system according to claim 1, further comprising an emission changing unit positioned between the substrate and the sensing unit, which changes the path of the reflected light so as to focus the reflected light, which is reflected in various directions, to the sensing unit. Claim 4 In claim 3, the above-mentioned emission changing part is a prism in the defect inspection system. Claim 5 A defect inspection system according to claim 4, wherein the prism includes an incident surface and an exit surface, and the position of the exit surface is changed so as to adjust the angle of inclination between the incident light and the reflected light. Claim 6 A defect inspection system according to claim 1, wherein the light source is configured to adjust the angle of incidence of the incident light based on the defect location of the substrate. Claim 7 In claim 1, the light source unit includes a plurality of sub-light sources, and the plurality of sub-light sources have at least one of wavelength, angle of incidence, and lighting time different in the defect inspection system. Claim 8 In claim 7, the defect inspection system comprising a light source unit that irradiates a first light onto a first substrate that moves preferentially, and a second sub-light source that irradiates a second light onto a second substrate that moves subsequently to the first substrate. Claim 9 In claim 1, the detection unit comprises at least one of a CIS (CMOS image sensor), a line scan camera, and an area scan camera, in a defect inspection system. Claim 10 A defect inspection system according to claim 1, wherein the sensing unit includes a line scan camera, and the line scan camera includes a TDI (time delay integration) camera that captures at least one part of the substrate multiple times in a scanning manner and generates an image signal by superimposing the captured images. Claim 11 In claim 1, the defect inspection module comprises: an image signal generation unit that generates the image signal using information of the substrate provided from the information collection module; a storage unit that stores information of the substrate in a normal state and defect information of the previous substrate as the reference; and a defect detection unit that generates a defect detection signal by comparing the image signal and the reference. Claim 12 A semiconductor manufacturing apparatus comprising: a first processing chamber; a second processing chamber; a load lock chamber for receiving a plurality of substrates to be loaded into the first or the second processing chamber; and a transfer chamber positioned between the first processing chamber, the second processing chamber, and the load lock chamber for transferring at least one of the plurality of substrates to be processed to the first processing chamber, the second processing chamber, or the load lock chamber, wherein the semiconductor manufacturing apparatus comprises a defect inspection device provided within the transfer chamber for detecting defects in the substrates based on an image signal of the substrates being transferred within the transfer chamber, and wherein the defect inspection device comprises a light source unit for providing incident light to the substrates; and an information collection module comprising a sensing unit configured to collect reflected light reflected from the substrates, generate an electrical signal for the reflected light, and move along the direction of movement of the substrates. Claim 13 In claim 12, the defect inspection device comprises at least one continuous shooting unit that continuously photographs at least a portion of the substrate and accumulates the captured signals to output a continuous image signal, thereby forming a semiconductor manufacturing device. Claim 14 In claim 13, the continuous shooting unit is a semiconductor manufacturing equipment positioned at different angles with respect to the substrate surface. Claim 15 In claim 13, the defect inspection device further comprises a lighting unit that provides illumination light to the continuous shooting unit, semiconductor manufacturing equipment. Claim 16 In claim 15, the lighting unit comprises a plurality of sub-light sources in which at least one of the incident angle, illuminance, and wavelength of the lighting light is different, in a semiconductor manufacturing equipment. Claim 17 In claim 16, the semiconductor manufacturing equipment wherein the plurality of sub-light sources are each provided at different locations and simultaneously provide the illumination light to the selected substrate. Claim 18 In claim 16, the semiconductor manufacturing equipment comprises a plurality of sub-light sources, a first sub-light source that irradiates a first light onto a first substrate that moves preferentially, and a second sub-light source that irradiates a second light onto a second substrate that moves subsequently to the first substrate. Claim 19 In claim 13, the defect inspection device further comprises an emission changing unit that changes the path of light emitted from the substrate and focuses it to the continuous shooting unit. Claim 20 A semiconductor manufacturing equipment comprising a first processing chamber, a second processing chamber, a load lock chamber, and a transfer chamber, wherein the transfer chamber includes a transfer member for transferring a substrate between the first processing chamber, the second processing chamber, and the transfer chamber, and a defect inspection device configured to detect defects in the substrate, wherein the defect inspection device includes a light source unit that provides incident light to the substrate; and an information collection module comprising a sensing unit configured to collect reflected light reflected from the substrate, generate an electrical signal for the reflected light, and move along the direction of movement of the substrate.

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