Apparatus and Method for treating substrate

Abstract

The present invention aims to provide a substrate processing apparatus comprising: a cup providing a processing space inside; a support unit supporting a substrate in the processing space and rotating the substrate; a nozzle supplying a processing liquid to the substrate; and a liquid supply unit supplying the processing liquid to the nozzle; wherein the liquid supply unit includes a tank storing the processing liquid; the tank includes a housing having a space for storing the processing liquid inside; and a silicon supply unit supplying silicon to the housing; and wherein the silicon supply unit includes a silicon supply line supplying silicon to the housing; and a cleaning fluid supply unit supplying a cleaning fluid to remove the silicon remaining in the silicon supply line. According to the present invention as described above, there is an effect of efficiently removing residual silicon within the silicon supply line.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus comprising a liquid supply unit that supplies a processing liquid to a substrate. Background Technology

[0002] Semiconductor processes include cleaning processes for thin films, foreign substances, particles, etc., on a substrate. These processes are carried out by placing the substrate on a spin head with the pattern surface facing up or down, supplying a processing solution onto the substrate while the spin head is rotating, and subsequently drying the wafer.

[0003] Recently, high-temperature liquids such as aqueous phosphoric acid solutions are used as processing liquids. For example, an aqueous phosphoric acid solution contains phosphoric acid and water. A liquid supply unit has a supply tank, a liquid supply line, and a nozzle. The supply tank is controlled so that the temperature of the aqueous phosphoric acid solution and the concentration of phosphoric acid are adjusted to suit process conditions. For example, the temperature of the aqueous phosphoric acid solution supplied to the substrate may be about 150°C to 180°C, and the concentration of phosphoric acid in the aqueous phosphoric acid solution may be about 85% to 95%. The aqueous phosphoric acid solution with controlled concentration and temperature is supplied from the supply tank to the nozzle through the liquid supply line.

[0004] FIG. 1 is a schematic diagram showing an example of a supply tank. Referring to FIG. 1, the supply tank (900) has a housing (910) and a circulation line (940). Additionally, the housing (910) is connected to a phosphoric acid supply line (920) through which phosphoric acid is supplied from the outside to the housing (910), a water supply line (930) through which water is supplied, a waste liquid discharge line (950) through which waste liquid is discharged from the housing (910), a liquid supply line (980) through which liquid is supplied to a substrate, and a vent line (970) through which water vapor evaporated from the housing (910) is exhausted.

[0005] A pump (942) and a heater (944) are installed in the circulation line (940). An aqueous phosphoric acid solution within the housing (910) flows along the circulation line (940) and is heated by the heater (944). The temperature of the aqueous phosphoric acid solution is controlled to a set temperature by heating with the heater (944). Additionally, the concentration of phosphoric acid in the aqueous phosphoric acid solution is controlled by the evaporation of water caused by heating with the heater (944).

[0006] A silicon supply line (960) may be connected to the housing (910) to contain silicon in an aqueous phosphoric acid solution in order to selectively etch the silicon nitride film on a substrate in which the silicon oxide film and the silicon nitride film are exposed. Generally, the amount of silicon contained in the aqueous phosphoric acid solution is very low.

[0007] However, after silicon is supplied to the housing (910), silicon remains in the silicon supply line (950) and precipitates in a solid state, causing the pipe to become clogged or further diluted in the phosphoric acid solution. Prior art literature

[65535] Published Patent Application No. 10-2018-0041725 (Published April 24, 2018) Japanese Published Patent Application No. JP 2015-135943 (Published July 27, 2015) The problem to be solved

[0008] One objective of the present invention is to provide a substrate processing apparatus and method capable of removing silicon remaining in a silicon supply line.

[0009] In addition, one objective is to provide a substrate processing apparatus and method that prevent silicon from precipitating in a silicon supply line.

[0010] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0011] One objective of the present invention is to provide a substrate processing apparatus and method capable of removing silicon remaining in a silicon supply line.

[0012] In addition, one objective is to provide a substrate processing apparatus and method that prevent silicon from precipitating in a silicon supply line.

[0013] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by a person skilled in the art from the description below.

[0014] A substrate processing device according to one embodiment of the present invention comprises a cup providing a processing space inside, a support unit that supports a substrate in the processing space and rotates the substrate, a nozzle that supplies a processing liquid to the substrate, and a liquid supply unit that supplies the processing liquid to the nozzle, wherein the liquid supply unit includes a tank that stores the processing liquid, and the tank includes a housing having a space for storing the processing liquid inside and a silicon supply unit that supplies silicon to the housing, and the silicon supply unit may include a silicon supply line that supplies the silicon to the housing and a cleaning fluid supply unit that supplies a cleaning fluid to remove the silicon remaining in the silicon supply line.

[0015] According to one embodiment, the cleaning fluid supply unit may include a liquid supply unit that supplies a cleaning liquid to the silicone supply unit.

[0016] According to one embodiment, the cleaning fluid supply unit may further include a first gas supply unit that supplies gas to the silicon supply unit.

[0017] According to one embodiment, the cleaning fluid supply unit may further include a second gas supply unit that supplies a gas with a higher pressure than the gas supplied from the first gas supply unit to the silicon supply unit.

[0018] According to one embodiment, the silicone supply unit further includes a metering supply tube provided in the silicone supply line, and the silicone supply line is composed of a first silicone supply line that supplies the silicone to the metering supply tube and a second silicone supply line that connects the metering supply tube and the housing, and the cleaning fluid supply unit may be connected to the metering supply tube.

[0019] A substrate processing method according to one embodiment of the present invention comprises a concentration control step of controlling the concentration of silicon by supplying silicon from a silicon supply unit into a housing in which a silicon-containing aqueous phosphoric acid solution is stored, and a silicon supply unit cleaning step of removing silicon remaining in the silicon supply unit after the concentration control step, wherein the silicon supply unit cleaning step may include a cleaning liquid supply step of supplying a cleaning liquid to a silicon supply line included in the silicon supply unit and a cleaning gas supply step of supplying a cleaning gas to the silicon supply line.

[0020] According to one embodiment, the cleaning gas supply step may be performed before the cleaning liquid supply step.

[0021] According to one embodiment, the silicon supply line cleaning step may further include a high-pressure gas supply step after the cleaning liquid supply step, which supplies a gas with a higher pressure than the cleaning gas supply step to the silicon supply line.

[0022] According to one embodiment, the silicon supply unit may further include a quantitative supply tube that receives a quantitative amount of silicon supplied to the housing, and a cleaning fluid supply line that supplies the cleaning liquid and the cleaning gas to the silicon supply line.

[0023] According to one embodiment, the concentration control step may include a flow rate control step of filling a quantitative supply tube with the silicon supplied to the housing and a supply step of supplying the silicon filled in the quantitative supply tube to the housing. Effects of the invention

[0024] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0025] In addition, according to one embodiment of the present invention, there is an effect of efficiently removing silicon remaining in the silicon supply line.

[0026] In addition, according to one embodiment of the present invention, there is an effect of preventing silicon precipitation within the silicon supply line.

[0027] In addition, according to one embodiment of the present invention, there is an effect of preventing silicon from being supplied to the liquid supply unit in excess of what is necessary.

[0028] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the accompanying drawings. Brief explanation of the drawing

[0029] Figure 1 is a diagram schematically showing the structure of a typical liquid supply unit. FIG. 2 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention. Figure 3 is a schematic diagram showing one embodiment of the liquid treatment chamber of Figure 2. FIG. 4 is a schematic diagram showing a liquid supply unit according to one embodiment of the present invention. Figure 5 is a drawing showing an example of the silicon supply unit of Figure 4. Figure 6 is a drawing showing another example of the silicon supply unit of Figure 4. Figure 7 is a drawing showing another example of the silicon supply unit of Figure 4. Figure 8 is a schematic diagram showing an example of the heater unit of Figure 4. FIG. 9 is a flowchart showing a substrate processing method using a substrate processing apparatus according to an embodiment of the present invention. FIGS. 10 to 14 are drawings showing the process of operation of the silicon supply unit of FIG. 5. Figures 15 and 16 are drawings showing examples of variations of a substrate processing device, respectively. FIG. 17 is a schematic diagram showing a liquid supply unit according to another embodiment of the present invention. Specific details for implementing the invention

[0030] Embodiments of the present invention are described below with reference to the attached drawings so that those skilled in the art can easily implement them. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in describing preferred embodiments of the present invention in detail, specific descriptions of related known functions or configurations are omitted if it is determined that such detailed descriptions would unnecessarily obscure the essence of the present invention. Additionally, the same reference numerals are used throughout the drawings for parts having similar functions and operations.

[0031] The term 'comprising' a component means that, unless specifically stated otherwise, it does not exclude other components but rather allows for the inclusion of additional components. Specifically, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0032] Singular expressions include plural expressions unless the context clearly indicates otherwise. Additionally, the shapes and sizes of elements in drawings may be exaggerated for clearer explanation.

[0033] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms may be used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component.

[0034] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. Conversely, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between. Other expressions describing the relationships between components, such as "between" and "exactly between," or "adjacent to" and "directly adjacent to," should be interpreted in the same way.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0036] FIG. 2 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention.

[0037] Referring to FIG. 2, the substrate processing device includes an index module (10) and a processing module (20). According to one embodiment, the index module (10) and the processing module (20) are arranged along one direction. Hereinafter, the direction in which the index module (10) and the processing module (20) are arranged is referred to as the first direction (92), the direction perpendicular to the first direction (92) when viewed from above is referred to as the second direction (94), and the direction perpendicular to both the first direction (92) and the second direction (94) is referred to as the third direction (96).

[0038] The index module (10) returns the substrate (W) from the container (80) containing the substrate (W) to the processing module (20), and receives the substrate (W) that has been processed in the processing module (20) back into the container (80). The longitudinal direction of the index module (10) is provided as a second direction (94). The index module (10) has a load port (12) and an index frame (14). The load port (12) is located on the opposite side of the processing module (20) relative to the index frame (14). The container (80) containing the substrates (W) is placed in the load port (12). Multiple load ports (12) may be provided, and multiple load ports (12) may be arranged along the second direction (94).

[0039] As the container (80), a sealed container such as a Front Open Unified Pod (FOUP) may be used. The container (80) may be placed at the load port (12) by a transport means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by a worker.

[0040] An index robot (120) is provided in the index frame (14). A guide rail (140) is provided within the index frame (14) with a longitudinal direction in the second direction (94), and the index robot (120) can be provided to be movable on the guide rail (140). The index robot (120) includes a hand (122) on which a substrate (W) is placed, and the hand (122) can be provided to move forward and backward, rotate about the third direction (96) as an axis, and move along the third direction (96). A plurality of hands (122) are provided spaced apart in the vertical direction, and the hands (122) can move forward and backward independently of each other.

[0041] The processing module (20) includes a buffer unit (200), a return chamber (300), and a processing chamber (400). The buffer unit (200) provides a space where a substrate (W) introduced into the processing module (20) and a substrate (W) removed from the processing module (20) temporarily stay. The processing chamber (400) performs a processing process to liquid-treat the substrate (W) by supplying liquid onto the substrate (W). The return chamber (300) returns the substrate (W) between the buffer unit (200) and the liquid-treating chamber (400).

[0042] The return chamber (300) may be provided with its length direction in the first direction (92). The buffer unit (200) may be positioned between the index module (10) and the return chamber (300). A plurality of liquid processing chambers (400) may be provided and may be positioned on the side of the return chamber (300). The liquid processing chamber (400) and the return chamber (300) may be positioned along the second direction (94). The buffer unit (200) may be located at one end of the return chamber (300).

[0043] According to one example, liquid treatment chambers (400) are each placed on both sides of the return chamber (300). On each side of the return chamber (300), the liquid treatment chambers (400) may be provided in an AXB arrangement (where A and B are each 1 or a natural number greater than 1) along the first direction (92) and the third direction (96).

[0044] The return chamber (300) has a return robot (320). A guide rail (340) is provided within the return chamber (300) in a longitudinal direction in the first direction (92), and the return robot (320) can be provided to be movable on the guide rail (340). The return robot (320) includes a hand (322) on which a substrate (W) is placed, and the hand (322) can be provided to move forward and backward, rotate about the third direction (96) as an axis, and move along the third direction (96). A plurality of hands (322) are provided spaced apart in the vertical direction, and the hands (322) can move forward and backward independently of each other.

[0045] The buffer unit (200) is provided with a plurality of buffers (220) on which a substrate (W) is placed. The buffers (220) may be spaced apart from each other along a third direction (96). The front face and rear face of the buffer unit (200) are open. The front face is the side facing the index module (10), and the rear face is the side facing the return chamber (300). The index robot (120) can access the buffer unit (200) through the front face, and the return robot (320) can access the buffer unit (200) through the rear face.

[0046] FIG. 3 is a schematic diagram showing one embodiment of the liquid treatment chamber (400) of FIG. 2. Referring to FIG. 3, the liquid treatment chamber (400) has a housing (410), a cup (420), a support unit (440), a nozzle unit (460), a lifting unit (480), a liquid supply unit (1000), and a controller.

[0047] The housing (410) is provided in a generally rectangular shape. The cup (420), support unit (440), and nozzle unit (460) are placed within the housing (410).

[0048] The cup (420) has a processing space with an open top, and the substrate (W) is liquid-processed within the processing space. The support unit (440) supports the substrate (W) within the processing space. The nozzle unit (460) supplies liquid onto the substrate (W) supported by the support unit (440). The liquid is provided in multiple types and can be supplied sequentially onto the substrate (W). The lifting unit (480) adjusts the relative height between the cup (420) and the support unit (440).

[0049] According to one example, the cup (420) has a plurality of recovery containers (422, 424, 426). Each of the recovery containers (422, 424, 426) has a recovery space for recovering the liquid used in the substrate processing. Each of the recovery containers (422, 424, 426) is provided in a ring shape that surrounds the support unit (440). When the liquid processing process is performed, the processing liquid scattered by the rotation of the substrate (W) flows into the recovery space through the inlets (422a, 424a, 426a) of each recovery container (422, 424, 426). According to one example, the cup (420) has a first recovery container (422), a second recovery container (424), and a third recovery container (426). The first recovery container (422) is positioned to surround the support unit (440), the second recovery container (424) is positioned to surround the first recovery container (422), and the third recovery container (426) is positioned to surround the second recovery container (424). The second inlet (424a) for introducing liquid into the second recovery container (424) is located above the first inlet (422a) for introducing liquid into the first recovery container (422), and the third inlet (426a) for introducing liquid into the third recovery container (426) may be located above the second inlet (424a).

[0050] The support unit (440) has a support plate (442) and a drive shaft (444). The upper surface of the support plate (442) is generally provided in a circular shape and may have a diameter larger than that of the substrate (W). A support pin (442a) is provided in the central part of the support plate (442) to support the rear surface of the substrate (W), and the upper end of the support pin (442a) is provided to protrude from the support plate (442) so that the substrate (W) is spaced a certain distance from the support plate (442). A chuck pin (442b) is provided at the edge of the support plate (442). The chuck pin (442b) is provided to protrude upward from the support plate (442) and supports the side of the substrate (W) so that the substrate (W) does not detach from the support unit (440) when the substrate (W) is rotated. The drive shaft (444) is driven by the drive unit (446) and is connected to the center of the bottom surface of the substrate (W), and rotates the support plate (442) around its center axis.

[0051] The nozzle unit (460) has a first nozzle (462) and a second nozzle (464). The first nozzle (462) supplies a treatment solution onto the substrate (W). The treatment solution may be a liquid at a temperature higher than room temperature. In one example, the treatment solution may be an aqueous phosphoric acid solution. The aqueous phosphoric acid solution may be a mixture of phosphoric acid and water. Optionally, the aqueous phosphoric acid solution may contain other substances. For example, the other substances may be silicon. The second nozzle (464) supplies water onto the substrate (W). The water may be pure water or deionized water.

[0052] The first nozzle (462) and the second nozzle (464) are each supported on different arms (461), and these arms (461) can be moved independently. Optionally, the first nozzle (462) and the second nozzle (464) can be mounted on the same arm and moved simultaneously.

[0053] Optionally, the liquid supply unit may be equipped with one or more additional nozzles in addition to the first nozzle (462) and the second nozzle (464). The additional nozzles may supply a different type of processing liquid to the substrate. For example, the different type of processing liquid may be an acid solution or a base solution for removing foreign matter from the substrate. Additionally, the different type of processing liquid may be an alcohol with a surface tension lower than that of water. For example, the alcohol may be isopropyl alcohol.

[0054] The lifting unit (480) moves the cup (420) in an up-and-down direction. The relative height between the cup (420) and the substrate (W) is changed by the up-and-down movement of the cup (420). As a result, the recovery containers (422, 424, 426) that recover the processing liquid are changed according to the type of liquid supplied to the substrate (W), so that the liquids can be separated and recovered. Unlike the above, the cup (420) is fixedly installed, and the lifting unit (480) can move the support unit (440) in an up-and-down direction.

[0055] The liquid supply unit (1000) supplies the treatment liquid to the first nozzle (462). Below, the case where the treatment liquid is an aqueous phosphoric acid solution is explained as an example.

[0056] FIG. 4 is a schematic diagram showing an example of a liquid supply unit according to an embodiment of the present invention. Referring to FIG. 4, the liquid supply unit (1000) has a tank (1200). The tank (1200) stores an aqueous phosphoric acid solution. The tank (1200) has a housing (1220), a circulation line (1240), a temperature measuring unit (1260), a concentration measuring unit (1280), and a controller (1900).

[0057] The housing (1220) is provided in a rectangular or cylindrical shape. The housing (1220) has a space for storing an aqueous phosphoric acid solution inside. An inlet line (1420) and an outlet line (1440) are connected to the housing (1220). A valve (not shown) is installed on each of the inlet line (1420) and the outlet line (1440).

[0058] An inlet line (1420) is provided as a line to replenish the phosphoric acid aqueous solution in the housing (1220). The phosphoric acid aqueous solution is introduced into the housing (1220) through the inlet line (1420). The phosphoric acid aqueous solution may be introduced into the housing (1220) through the inlet line (1420) at a temperature lower than the set temperature used for substrate processing. Additionally, the phosphoric acid aqueous solution may be introduced into the housing (1220) through the inlet line (1420) at a concentration lower than the set concentration of phosphoric acid used for substrate processing. The set concentration may be the concentration of phosphoric acid in the process of processing the substrate.

[0059] The discharge line (1440) is provided as a line for discharging a phosphoric acid aqueous solution with controlled temperature and concentration to a nozzle unit (46). One end of the discharge line (1440) is connected to a housing (1220) and the other end is connected to a nozzle unit (460). In the example described above, the discharge line (1440) is described as being connected to the housing (1220), but it may be connected to a circulation line (1240).

[0060] A waste liquid line (1460) is connected to the housing (1220). A valve (not shown) is installed in the waste liquid line (1460). When the phosphoric acid aqueous solution is disposed of after being reused a certain number of times or for a certain period, the phosphoric acid aqueous solution inside the housing (1220) is discharged outside the housing (1220) through the waste liquid line (1460). In the example described above, the waste liquid line (1460) is described as being connected to the housing (1220), but it may be connected to the circulation line (1240).

[0061] An exhaust line (1490) is connected to the housing (1220). The exhaust line (1490) exhausts water vapor evaporated from the phosphoric acid solution stored in the housing (1220) to the outside of the housing (1220). A valve (not shown) is installed in the exhaust line (1490). The exhaust line (1490) is connected to the upper surface of the housing (1220). When the pressure inside the housing (1220) exceeds a predetermined pressure, the gas inside the housing (1220) can be discharged through the exhaust line (1490).

[0062] A phosphoric acid replenishment unit (1482) and a water replenishment unit (1484) may be connected to the housing (1220). A valve (not shown) is installed in each of the phosphoric acid replenishment unit (1482) and the water replenishment unit (1484). The phosphoric acid replenishment unit (1482) may replenish phosphoric acid to the phosphoric acid aqueous solution introduced into the housing (1220), and the water replenishment unit (1484) may replenish water to the phosphoric acid aqueous solution introduced into the housing (1220). The water may be pure water or deionized water. Replenishment of phosphoric acid and water may be based on the level of the phosphoric acid aqueous solution measured by a water level sensor (1222) provided within the housing (1220). Optionally, phosphoric acid and water may be replenished after the phosphoric acid aqueous solution is reused a certain number of times or for a certain period and then discharged from the housing (1220).

[0063] If the phosphoric acid solution contains silicon, a silicon supply unit (1500) may be additionally connected to the housing (1220). The silicon supply unit (1500) can replenish silicon in the phosphoric acid solution introduced into the housing (1220). The phosphoric acid replenishment unit (1482), the water replenishment unit (1484), and the silicon supply unit (1500) may be connected to a plurality of tanks (1200).

[0064] FIG. 5 is a drawing showing an example of the silicon supply unit of FIG. 4. Referring to FIG. 5, the silicon supply unit (1500) adjusts the silicon concentration of the phosphoric acid aqueous solution by replenishing silicon to the phosphoric acid aqueous solution within the housing (1220). The silicon supply unit (1500) is connected to the housing (1220) by a silicon supply line (1502). The silicon supply unit (1500) includes a silicon source (1520), a metering supply tube (1540), a cleaning fluid supply unit (1560), and a controller (1900).

[0065] The silicone supply line (1502) is equipped with a quantitative supply tube (1540). The silicone supply line (1502) may be provided with a silicone filling line (1502a) for filling silicone into the quantitative supply tube (1540) based on the quantitative supply tube (1540), and a silicone replenishment line (1502b) for replenishing the silicone filled in the quantitative supply tube (1540) to the housing (1220).

[0066] The silicone filling line (1502a) is equipped with a filter (1522), a temperature sensor (1524), and a needle valve (1526).

[0067] The filter (1522) blocks contaminants and precipitated silicon from entering the quantitative supply tube (1540). The filter (1522) can block foreign substances larger than 1 μm. The temperature sensor (1524) measures the temperature of the silicon flowing into the quantitative supply tube (1540). When the silicon is 50°C or higher, a phenomenon of precipitation occurs. If the supplied silicon is above a set temperature, the temperature sensor (1524) sends a signal to the controller (1900) to block the supply of silicon. The needle valve (1526) controls the supply speed of silicon filled from the silicon supply unit (1500) into the quantitative supply tube (1540). The silicon filling line (1502a) is equipped with a valve (V4).

[0068] The silicone replenishment line (1502b) is a line through which silicone filled in the quantitative supply tube (1540) moves to the housing (1220). The silicone replenishment line (1502b) is equipped with a valve (V5). The silicone replenishment line (1502b) is connected to a drain line (1504) for discharging silicone remaining inside the housing (1220) after silicone replenishment is completed. The drain line (1504) is equipped with a valve (V9).

[0069] In the example described above, the silicone filling line (1502a) and the silicone replenishment line (1502b) are described as being connected as one, but the silicone filling line (1502a) and the silicone replenishment line (1502b) can each be connected to a quantitative supply tube (1540).

[0070] Since the concentration of silicon in the phosphoric acid aqueous solution within the housing (1220) is set to be very low, ranging from tens of ppm to hundreds of ppm, the flow rate of silicon supplied at one time is very small. Accordingly, a quantitative supply tube (1540) is provided to accurately supply a small amount of silicon. The quantitative supply tube (1540) can be provided to supply only a preset amount of silicon to the phosphoric acid aqueous solution within the housing (1220). The quantitative supply tube (1540) can be provided in a cylindrical shape. The quantitative supply tube (1540) forms an internal space into which silicon is filled. The quantitative supply tube (1540) can be installed with its longitudinal direction perpendicular to the ground. At this time, a silicon supply line (1502) can be connected to the lower side of the quantitative supply tube. The quantitative supply tube (1540) is equipped with a level sensor (1542) that measures the amount of silicon filled in the internal space. Multiple level sensors (1542) can be provided. Level sensors (1542) can be classified into a low level sensor (1542a), a mid level sensor (1542b), a high level sensor (1542c), and an overflow sensor (1542d) depending on the height at which they are installed in the metering supply tube (1540). The level sensor (1542) transmits information about the amount of silicon filled in the metering supply tube (1540) to the controller (1900). The metering supply tube (1540) is connected to a first gas supply unit (1544) that moves the filled silicon to the housing (1220).

[0071] The first gas supply unit (1544) supplies gas to the metering supply tube (1540). The first gas supply unit (1544) includes a first gas supply source (1544a) and a first gas supply line (1544b). The first gas supply source (1544a) is connected to the metering supply tube (1540) via the first gas supply line (1544b). The first gas supply line (1544b) is connected to the upper side of the metering supply tube (1540). The gas supplied from the first gas supply source (1544a) is supplied to the metering supply tube (1540) through the first gas supply line (1544b). The gas may be air or nitrogen (N2). The first gas supply unit (1544) injects gas at a constant pressure into the metering supply tube (1540) while silicone is being filled into the metering supply tube (1540). Additionally, the first gas supply unit (1544) moves the silicone filled in the metering supply tube (1540) to the housing (1220) by supplying gas to the metering supply tube (1540). The first gas supply unit (1544) can continuously supply gas at a constant pressure to the metering supply tube (1540). The first gas supply line (1544b) is equipped with a valve (V6). The valve (V6) may be provided as a variable pressure valve (V6). The controller (1900) adjusts the pressure of the first gas supplied to the metering supply tube using the variable pressure valve (V6). A drain line (1546) for discharging excess silicon supplied from the metering supply tube (1540) may be formed in the first gas supply line (1544b). A valve (V10) is provided in the drain line (1546).

[0072] The cleaning fluid supply unit (1560) supplies a cleaning fluid to remove residual silicon in the silicon supply line (1502) and the metering supply tube (1540). The cleaning fluid supply unit (1560) may be connected to the upper side of the metering supply tube. The cleaning fluid supply unit (1560) includes a cleaning gas supply unit (1562), a cleaning liquid supply unit (1564), and a second gas supply unit (1566).

[0073] The cleaning gas supply unit (1562) supplies a cleaning gas to clean the silicone supply line (1502) and the metering supply tube (1540). The cleaning gas may be air or nitrogen (N2). The cleaning gas supply unit (1562) includes a cleaning gas source (1562a) and a cleaning gas supply line (1562b). The cleaning gas of the cleaning gas supply unit (1562) and the first gas of the first gas supply unit (1544) may be the same gas. If the cleaning gas and the first gas for silicone replenishment are the same, the first gas supply unit (1544) may supply the cleaning gas to the silicone supply line (1502) and the metering supply tube (1540) instead of the cleaning gas supply unit (1562). Optionally, a first gas supply unit (1544) for pushing silicone inside the metering supply tube (1540) into the housing (1220) and a cleaning gas supply unit (1562) for cleaning the internal space of the metering supply tube (1540) may each be provided.

[0074] Alternatively, as illustrated in FIG. 6, a first gas supply unit (1544) and a cleaning gas supply unit (1562) may each be provided. A cleaning gas supply line (1562b) is connected to the first gas supply line (1544b). A valve (V7) is provided in the cleaning gas supply line (1562b).

[0075] The cleaning liquid supply unit (1564) supplies a cleaning liquid to the metering supply tube (1540). The cleaning liquid may be water. The water may be pure water or deionized water. The cleaning liquid supply unit (1564) includes a cleaning liquid source (1564a) and a cleaning liquid supply line (1564b). The cleaning liquid source (1564a) is connected to the metering supply tube (1540) via the cleaning liquid supply line (1564a). The cleaning liquid supply line (1564b) may be connected to the first gas supply line (1544b) or the cleaning gas supply line (1562b). The cleaning liquid supply line (1564a) is connected to the upper side of the metering supply tube (1540). The cleaning liquid supply line (1564a) may be connected to the first gas supply line (1544b). The cleaning fluid supply line (1564a) is equipped with a valve (V8).

[0076] The second gas supply unit (1566) supplies a second gas to the silicon supply line (1502) and the metering supply tube (1540). The second gas can remove silicon and cleaning liquid remaining in the silicon supply line (1502) and the metering supply tube (1540). The second gas supply unit (1566) can spray gas at a higher pressure than the first gas supply unit (1544). The second gas may be air or nitrogen (N2). The second gas may be the same gas as the first gas and the cleaning gas. If the second gas is the same as the first gas and the cleaning gas, the first gas supply unit (1544) can perform the function of the second gas supply unit (1566). In this case, the first gas supply unit (1544) is equipped with a pressure regulating valve to change the pressure of the supplied gas.

[0077] Alternatively, as illustrated in FIG. 6, the second gas supply unit (1566) may be provided separately from the first gas supply unit (1544) and the cleaning gas supply unit (1562). The second gas supply unit (1566) has a second gas supply source (1566a) and a second gas supply line (1566b). The second gas supply source (1566a) is connected to the metering supply tube (1540) via the second gas supply line (1566b). The second gas supply line (1566b) is connected to the upper side of the metering supply tube (1540). The second gas supply line (1566b) may be connected to the cleaning gas supply line (1562a). The second gas supply line (1566b) is equipped with a valve (V9).

[0078] In the example described above, a quantitative supply tube (1540) is provided in the silicon supply line (1502), but as shown in FIG. 7, the silicon supply line (1502) may be provided with a flow meter (1528) for measuring the flow rate of silicon supplied to the supply housing (1220).

[0079] A circulation line (1240) is connected to the housing (1220). In one example, one end of the circulation line (1240) functions as an inlet (1240a) and is connected to the bottom surface of the housing (1220). The other end of the circulation line (1240) functions as an outlet (1240b) and is immersed in an aqueous phosphoric acid solution within the housing (1220). Optionally, the other end of the circulation line (1240) may be positioned higher than the surface (1224) of the aqueous phosphoric acid solution stored within the housing (1220). The circulation line (1240) has a pump unit (1300), a heater unit (1600), a temperature measuring unit (1250), and a concentration measuring unit (1260).

[0080] The pump unit (1300) provides a flow pressure that causes the phosphoric acid aqueous solution in the housing (1220) to flow through the circulation line (1240). The heater unit (1600) heats the phosphoric acid aqueous solution flowing through the circulation line (1240). In one example, the heater unit (1600) is controlled so that the phosphoric acid aqueous solution is heated to a set temperature. In one example, the set temperature may be approximately 140°C to 170°C. The set temperature may be set differently depending on the concentration of phosphoric acid in the phosphoric acid aqueous solution. An inlet valve (V1) and an outlet valve (V2) may be installed in the circulation line (1240). The portion of the circulation line (1240) that protrudes into the housing (1220) is called the injection pipe (1700). The injection pipe (1700) injects the heated phosphoric acid aqueous solution into the interior of the housing (1220).

[0081] FIG. 8 is a schematic diagram showing an example of a heater unit of FIG. 4. Referring to FIG. 8, the heater unit (1600) has a body (1620) and a heater (1640). The heater (1640) is located inside the body (1620). The body (1620) is provided with a first port (1622) and a second port (1624). An aqueous phosphoric acid solution flows into the interior of the heater unit (1600) through the first port (1622) and flows out of the heater unit (1600) through the second port (1624). A flow path (1660) through which the aqueous phosphoric acid solution flows is formed inside the body (1620). The flow path (1660) is connected to the first port (1622) and the second port (1624). According to one example, the Euro (1660) may consist of an inlet (1662), an outlet (1664), and a connecting path (1666). A first port (1622) is located at one end of the inlet (1662), and a second port (1624) is located at one end of the outlet (1664). The connecting path (1666) connects the inlet (1662) and the outlet (1664). The inlet (1662) and the outlet (1664) may be provided facing each other. The inlet (1662) and the outlet (1664) may be located parallel to each other and spaced apart by a certain distance. A heater (1640) may be located in the space enclosed by the inlet (1662), the outlet (1664), and the connecting path (1666). The structure of the heater unit (1600) is not limited thereto and may be varied.

[0082] The concentration measuring unit (1260) measures the concentration of phosphoric acid contained in the phosphoric acid aqueous solution flowing in the circulation line (1240). The concentration measuring unit (1260) may be provided in the first line (1242) or the second line (1244). The concentration measuring unit (1260) transmits the measured phosphoric acid concentration information to the controller (1900).

[0083] A gas supply line (1800) is connected to the housing (1220). Gas is injected into the interior of the housing (1220) through the gas supply line (1800). A gas valve (V3) is installed in the gas supply line (1800). The gas promotes the evaporation of water contained in the phosphoric acid solution within the housing (1220). The gas may be provided as a low-humidity gas. The gas may be either nitrogen (N2) or air. Optionally, the gas may contain additional gases. The temperature of the supplied gas may be provided at a temperature higher than the temperature at which water can evaporate. As another example, it may be provided at a temperature equal to or higher than the temperature of the phosphoric acid solution heated in the circulation line (1240). The discharge end of the gas supply line (1800) may be located inside the housing (1220).

[0084] In the example described above, the temperature measuring unit (1250) and the concentration measuring unit (1260) are described as being provided in the circulation line (1240), but alternatively, the temperature measuring unit (1250) and the concentration measuring unit (1260) may be installed in the housing (1220).

[0085] The controller (1900) controls the pump unit (1300) and the heater unit (1600). The controller (1900) controls the pump unit (1300) so that the phosphoric acid aqueous solution stored in the housing (1220) circulates through the circulation line (1240). The controller (1900) controls the heater unit (1600) so that the phosphoric acid aqueous solution circulating through the circulation line (1240) is heated. The controller (1900) controls the valves (V1, V2, V3) installed in the liquid supply unit (1000). Additionally, the controller (1900) controls the valves (V4, V5, V6, V7, V8, V9, V10, V11) installed in the silicon supply unit (1500).

[0086] Hereinafter, a substrate processing method according to an embodiment of the present invention is described using a silicon supply unit (1500).

[0087] FIG. 9 is a flowchart showing a substrate processing method using a substrate processing device according to an embodiment of the present invention. FIGS. 10 to 14 are drawings showing the process of operation of the silicon supply unit of FIG. 5. In FIGS. 10 to 14, the valve in the open state is shown as having an empty interior (white), and the valve in the closed state is shown as having a filled interior (black). Hereinafter, the first gas supply unit (1544) is described as performing the functions of the cleaning gas supply unit (1562) and the second gas supply unit (1566) as an example. Referring to FIGS. 9 to 14, the substrate processing method is a method of processing a substrate with a phosphoric acid aqueous solution by supplying silicon to the phosphoric acid aqueous solution to adjust the concentration. The substrate processing method includes a concentration adjustment step (S10) and a silicon supply line cleaning step (S20). For example, the controller (1900) controls the silicon supply unit (1500) and the cleaning fluid supply unit (1560) so that the concentration control step (S10) and the silicon supply line cleaning step (S20) are performed sequentially. Additionally, the controller (1900) controls the ON / OFF status of the valves (V4, V5, V6, V7, V8, V9, V10, V11) installed in the silicon supply unit (1500) according to the process sequence.

[0088] In the concentration control step (S10), silicon is supplied to the housing (1220) from the silicon source (1520) through the silicon supply line (1502). First, the concentration control step (S10) is described as follows: the concentration control step (S10) includes a silicon filling step (S110) and a silicon replenishment step (S120).

[0089] The silicone filling step (S110) is a step in which silicone is filled from a silicone source (1520) into a quantitative supply tube (1540). First, the valve (V4) of the silicone filling line (1502a) is opened. Silicone is filled from the silicone source (1520) into the quantitative supply tube (1540). A level sensor (1542) detects the amount of silicone being filled into the quantitative supply tube (1540). When the silicone reaches the level sensor (1542c), the filling of silicone is stopped. If the silicone reaches a height where an overflow sensor (1542d) is installed within the quantitative supply tube (1540), the valve (V10) of the drain line (1546) is opened. The silicone that is overfilled in the quantitative supply tube (1540) is discharged through the drain line (1546). In the silicone filling step (S110), the valve (V6) of the first gas supply unit (1544) can be opened to supply a first gas at a constant pressure so that silicone is filled into the quantitative supply tube (1540) at a constant rate. The valve (V6) of the first gas supply unit (1544) may always be open.

[0090] The silicone replenishment step (S120) is a step of replenishing the silicone filled in the quantitative supply tube (1540) into the housing (1220). The valve (V4) of the silicone filling line (1502a) and the valve (V10) of the drain line (1546) are closed, and the valve (V6) of the first gas supply unit (1544) and the valve (V5) of the silicone replenishment line (1502b) are opened. The first gas moves the silicone inside the quantitative supply tube (1540) into the housing (1220). At this time, the pressure of the first gas supplied by the first gas supply unit (1544) can be set higher than the pressure in the silicone filling step (S110).

[0091] The silicon filling step (S110) and the silicon replenishment step (S120) can be repeated until the silicon in the phosphoric acid aqueous solution in the housing (1220) reaches a preset concentration.

[0092] Next, the silicon supply line cleaning step (S20) is described. In the silicon supply line cleaning step (S20), a cleaning fluid is supplied to the quantitative supply tube (1540) and the silicon replenishment line (1502b) to remove residual silicon inside. The silicon supply line cleaning step (S20) is executed immediately after the silicon supply step (S10) is completed. The silicon supply line cleaning step (S20) includes a cleaning gas supply step (S210), a cleaning liquid supply step (S220), and a second gas supply step (S230). The silicon supply line cleaning step (S20) concentration control step (S10) is performed after the silicon supply is completed once. Optionally, it may be performed after the concentration control step (S10) is repeated multiple times.

[0093] The cleaning gas supply step (S210) is a step in which the first gas supply unit (1544) or the cleaning gas supply unit (1562) supplies cleaning gas to the metering supply tube (1540) and the silicone replenishment line (1502b) where silicone remains. The valve (V5) of the line (1502b) is closed, and the valve (11) of the drain line (1504) is opened. The first gas supply unit (1544) sprays gas to discharge the silicone remaining in the metering supply tube (1540) and the silicone replenishment line (1502b) into the drain line (1504). The sprayed gas may be supplied at a pressure stronger than the spray pressure of the silicone filling step (S110).

[0094] The cleaning solution supply step (S220) is a step for removing silicone that was not removed in the cleaning gas supply step (S210). The valve (V6) of the first gas supply unit (1544) is closed, and the valve (V8) of the cleaning solution supply unit (1564) is opened. The cleaning solution discharges the silicone remaining in the silicone supply line (1502) and the metering supply tube (1540) into the drain line (1504).

[0095] The second gas supply step (S230) is a step for removing the cleaning solution remaining in the metering supply tube (1540) and the silicone replenishment line (1502b) after the cleaning solution supply step (S220). The valve (V8) of the cleaning solution supply unit (1564) is closed, and the valve (V6) of the first gas supply unit (1566) is opened. The first gas supply unit (1544) sprays gas to discharge the silicone remaining in the metering supply tube (1540) and the silicone replenishment line (1502b) to the drain line (1504). The sprayed gas may be supplied at a pressure stronger than the spray pressure of the cleaning gas supply step (S210).

[0096] When the silicone supply line cleaning step (S20) is completed, a silicone replenishment line cleaning step (S30) is performed to clean the part of the silicone replenishment line (1502b) connected to the housing (1220).

[0097] The silicone replenishment line cleaning step (S30) can be performed in the same order as the silicone supply line cleaning step (S20). In the silicone replenishment line cleaning step (S30), the valve (V11) of the drain line (1504) is closed and the valve (V5) of the silicone replenishment line (1502b) is opened.

[0098] In the silicone supply line cleaning step (S20) and the silicone replenishment line cleaning step (S30), if cleaning is performed using only cleaning gas, there is a problem where silicone remains in the quantitative supply tube (1540) and the silicone supply line (1502b). Conversely, if cleaning is performed using only cleaning liquid, the cleaning effect is high, but the cleaning liquid is supplied excessively into the housing (1220), which affects the concentration of the phosphoric acid aqueous solution. Therefore, the change in the concentration of the phosphoric acid aqueous solution can be minimized by first cleaning the silicone supply line (1502) with cleaning gas and then supplying as little cleaning liquid as possible.

[0099] Figures 15 and 16 are drawings showing examples of variations of a substrate processing device, respectively.

[0100] As illustrated in FIG. 15, an inlet line (1420) connected to the housing (1220) of the tank (1200) can be directly connected to the liquid treatment chamber (400). In this case, the treatment liquid used for substrate treatment in the liquid treatment chamber (400) is directly recovered to the housing (1220) of the tank (1200). Additionally, an outlet line (1440) can be directly connected to the nozzle of the liquid treatment chamber (400). In this case, an aqueous phosphoric acid solution with controlled temperature and concentration from the tank (1200) can be supplied to the nozzle through the outlet line (1440).

[0101] Additionally, as illustrated in FIG. 16, the processing liquid used for substrate processing in the liquid processing chamber (400) is directly recovered to the condensation tank (5001), and subsequently, the processing liquid can be introduced from the condensation tank (5001) to the tank (1200) through the inflow line (1420). Additionally, the phosphoric acid aqueous solution with controlled temperature and concentration in the tank (1200) is supplied to the buffer tank (5002) through the outflow line (1440), and subsequently, the phosphoric acid aqueous solution can be supplied from the buffer tank (5002) to the nozzle. Either the condensation tank (5001) or the buffer tank (5002), or the condensation tank (5001) and the buffer tank (5002), may be provided with a structure identical or similar to that of the tank (1200). The phosphoric acid aqueous solution with controlled concentration is directly supplied to the nozzle of the liquid processing chamber (400).

[0102] In the example described above, the liquid processing chamber (400) was described as a single-wafer type that liquid processes individual substrates (W), but as shown in FIG. 17, it can be provided as a batch type liquid processing chamber (500) that liquid processes multiple substrates (W) simultaneously.

[0103] As described above, according to one embodiment of the present invention, by supplying a cleaning gas to the silicon supply line followed by supplying a cleaning solution, the concentration of the aqueous phosphoric acid solution can be changed to a minimum. In addition, there is an effect of preventing silicon precipitation within the silicon supply line.

[0104] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the disclosed content, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required for specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Additionally, the appended claims should be interpreted as including other embodiments. Explanation of the symbols

[0105] 1500 : Silicon supply unit 1502: Silicone supply line 1502a : Silicone filling line 1502b : Silicone supplement line 1504 : Drain line 1520 : Silicon source 1522 : Filter 1524 : Temperature sensor 1526 : Needle valve 1540: Metered supply tube 1542 : Level sensor 1544: 1st Gas Supply Unit 1546 : Drain line 1560: Cleaning fluid supply unit 1562: Cleaning gas supply unit 1564: Cleaning solution supply unit 1566: 2nd Gas Supply Unit V4: Valve V5: Valve V6: Valve V7: Valve V8: Valve V9: Valve V10: Valve V11 : Valve

Claims

Claim 1 A substrate processing device comprising: a cup providing a processing space inside; a support unit that supports the substrate in the processing space and rotates the substrate; a nozzle that supplies a processing liquid to the substrate; and a liquid supply unit that supplies the processing liquid to the nozzle; wherein the liquid supply unit comprises a tank that stores the processing liquid; and the tank comprises a housing having a space in which the processing liquid is stored inside; and a silicon supply unit that supplies silicon to the housing; wherein the silicon supply unit comprises a silicon supply line that supplies the silicon to the housing; and a cleaning fluid supply unit that supplies a cleaning fluid to remove the silicon remaining in the silicon supply line; and wherein the cleaning fluid supply unit comprises a first gas supply unit that supplies gas to the silicon supply unit. Claim 2 In claim 1, the substrate processing apparatus further comprises: a liquid supply unit that supplies a cleaning fluid to the silicon supply unit. Claim 3 delete Claim 4 A substrate processing apparatus according to claim 1, wherein the cleaning fluid supply unit further comprises a second gas supply unit that supplies a gas with a higher pressure than the gas supplied from the first gas supply unit to the silicon supply unit. Claim 5 A substrate processing device comprising: a cup providing a processing space inside; a support unit that supports the substrate in the processing space and rotates the substrate; a nozzle that supplies a processing liquid to the substrate; and a liquid supply unit that supplies the processing liquid to the nozzle; wherein the liquid supply unit comprises a tank that stores the processing liquid; and the tank comprises a housing having a space in which the processing liquid is stored inside; and a silicon supply unit that supplies silicon to the housing. The silicon supply unit comprises a silicon supply line that supplies the silicon to the housing; a cleaning fluid supply unit that supplies a cleaning fluid to remove the silicon remaining in the silicon supply line; and a quantitative supply tube provided in the silicon supply line. The cleaning fluid supply unit is connected to the quantitative supply tube, and the silicon supply line comprises a first silicon supply line that supplies the silicon to the quantitative supply tube; and a second silicon supply line that connects the quantitative supply tube and the housing. Claim 6 A substrate processing method comprising: a concentration control step for controlling the concentration of silicon by supplying silicon from a silicon supply unit into a housing in which a silicon-containing phosphoric acid aqueous solution is stored; and a silicon supply unit cleaning step for removing silicon remaining in the silicon supply unit after the concentration control step, wherein the silicon supply unit cleaning step comprises: a cleaning liquid supply step for supplying a cleaning liquid to a silicon supply line included in the silicon supply unit; and a cleaning gas supply step for supplying a cleaning gas to the silicon supply line. Claim 7 In claim 6, the cleaning gas supply step is performed before the cleaning liquid supply step in a substrate processing method. Claim 8 In claim 7, the silicon supply line cleaning step further comprises a high-pressure gas supply step, which supplies a gas with a higher pressure than the cleaning gas supply step to the silicon supply line after the cleaning liquid supply step; a substrate processing method. Claim 9 In claim 6, the silicon supply unit further comprises: a quantitative supply tube that receives a quantitative amount of the silicon supplied to the housing; and a cleaning fluid supply line that supplies the cleaning liquid and the cleaning gas to the silicon supply line; a substrate processing method. Claim 10 In claim 9, the concentration control step comprises: a flow rate control step of filling a quantitative supply tube with the silicon supplied to the housing; and a supply step of supplying the silicon filled in the quantitative supply tube to the housing; a substrate processing method.

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