Electronic component and fabricating method thereof

Abstract

An electronic component and a method for manufacturing the same are provided. The electronic component comprises a body including a plurality of internal electrodes disposed with respect to a plurality of stacked dielectric layers and corresponding dielectric layers, a microbody including an electrode layer disposed on an outer surface of the body and connected to some of the plurality of internal electrodes, and a sealing film, wherein the microbody includes an open microhole defined by at least some of the dielectric layer, internal electrodes, and electrode layer and opening through the surface of the microbody, and the sealing film includes an internal sealing film that at least partially fills the interior of the open microhole and closes the entrance of the open microhole.

Description

Technology Field

[0001] The present invention relates to electronic components and a method for manufacturing the same. Background Technology

[0002] Among electronic components, the Multi-Layered Ceramic Capacitor (MLCC) is a chip-type capacitor mounted on the printed circuit boards of various electronic products, such as video devices like Liquid Crystal Displays (LCDs), computers, smartphones, and mobile phones, that serves to charge or discharge electricity.

[0003] These multilayer capacitors can be used as components in various electronic devices due to their advantages of being compact, guaranteeing high capacitance, and being easy to mount. Recently, as electronic device components have become smaller, there is an increasing demand for miniaturization and higher capacitance of multilayer capacitors.

[0004] A multilayer capacitor comprises a plurality of dielectric layers, a plurality of internal electrodes alternately arranged between the dielectric layers, and external electrodes connected to the internal electrodes. While it is desirable for the dielectric layers, internal electrodes, and external electrodes to be tightly bonded to one another, defects may occur in some cases. Such defects can serve as pathways for fluid infiltration. Prior art literature

[65535] Republic of Korea Published Patent Application No. 10-2019-0121173 The problem to be solved

[0005] The problem that the present invention aims to solve is to provide an electronic component in which the path of fluid penetration into the interior is blocked.

[0006] Another problem that the present invention aims to solve is to provide a method for manufacturing an electronic component in which the internal fluid penetration path is blocked.

[0007] The technical problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0008] An electronic component according to one embodiment for solving the above problem comprises a body having a plurality of internal electrodes disposed with a plurality of stacked dielectric layers and a corresponding dielectric layer between them, a microbody having an electrode layer disposed on an outer surface of the body and connected to some of the plurality of internal electrodes, and a sealing film, wherein the microbody includes an open microhole defined by at least some of the dielectric layer, the internal electrodes, and the electrode layer and opening through the surface of the microbody, and the sealing film includes an internal sealing film that at least partially fills the interior of the open microhole and closes the entrance of the open microhole.

[0009] An electronic component according to another embodiment for solving the above problem comprises a body including a plurality of stacked dielectric layers and a plurality of internal electrodes disposed with the corresponding dielectric layers in between, an electrode layer disposed on the body and disposed to be electrically connected to the corresponding internal electrodes, an external electrode including a plating layer disposed on the electrode layer, and an external sealing film disposed on the interface between the end of the electrode layer and the body.

[0010] A method for manufacturing an electronic component according to one embodiment for solving the above other problems comprises the steps of: providing a microbody including a plurality of internal electrodes disposed with a plurality of stacked dielectric layers and a corresponding dielectric layer between them, and an electrode layer disposed on the outer surface of the body and connected to some of the plurality of internal electrodes; forming a sealing thin film on the microbody by a vapor deposition process; and removing the sealing thin film at least partially.

[0011] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0012] According to an electronic product and a method for manufacturing the same, the penetration of fluid into the interior can be effectively blocked. Therefore, defects caused by fluid exposure of internal components of the electronic product can be prevented.

[0013] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0014] FIG. 1 is a perspective view for explaining an electronic component according to the present embodiment. Figure 2 is an exploded perspective view to illustrate the electronic components of Figure 1. FIG. 3 is an exploded perspective view to explain the body of the electronic component shown in FIG. 1. Figure 4 is a cross-sectional view taken along the line IV-IV' of Figure 1. FIG. 5 is a partial cross-sectional view of a microbody before forming a sealing thin film according to one embodiment. Figure 6 is a schematic diagram showing a state in which a microbody containing open micro-holes is exposed to a fluid. Figure 7 is a schematic diagram showing a state in which a microbody containing closed micropores is exposed to a fluid. Figure 8 is a partial cross-sectional view showing a structure in which a sealing film is formed on the microbody of Figure 5. Figure 9 is a schematic diagram showing a state in which a microstructure with a sealing film formed inside an open micropore is exposed to a fluid. FIGS. 10, FIGS. 11, FIGS. 13, FIGS. 15 and FIGS. 16 are cross-sectional views illustrating process steps of a method for manufacturing an electronic component according to one embodiment. FIG. 12 is a schematic diagram showing a process for forming a sealing thin film of an electronic component according to one embodiment. Figure 14 is a partial cross-sectional view illustrating the growth direction of the sealing thin film. FIG. 17 is a cross-sectional view of an internal sealing thin film of an electronic component according to various embodiments. FIG. 18 is a cross-sectional view illustrating a method of forming a coating layer in an open micropore by a wet method. FIG. 19 is a cross-sectional view of an electronic component according to another embodiment. Specific details for implementing the invention

[0015] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0016] When elements or a layer are referred to as being "on" or "on" another element or layer, it includes not only being directly on top of the other element or layer but also cases where another layer or element is interposed in between. On the other hand, when an element is referred to as being "directly on" or "directly on," it indicates that no other element or layer is interposed in between.

[0017] Spatially relative terms such as "below," "beneath," "lower," "above," and "upper" may be used to facilitate the description of the relationship between one element or component and another, as illustrated in the drawings. Spatially relative terms should be understood as encompassing different orientations of the element during use or operation, in addition to the orientations illustrated in the drawings. For example, if an element illustrated in the drawings is flipped, the element described as "below" or "beneath" of another element may be placed "above" of that other element. Therefore, the exemplary term "below" may encompass both the lower and upper directions. Elements may also be oriented in other directions, and accordingly, spatially relative terms may be interpreted according to the orientation.

[0018] Although terms such as "first," "second," etc. are used to describe various elements, components, and / or sections, it goes without saying that these elements, components, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, component, or section from another. Accordingly, it goes without saying that the first element, first component, or first section mentioned below may be a second element, second component, or second section within the technical scope of the present invention.

[0019] Hereinafter, various embodiments will be described with reference to the attached drawings.

[0020] FIG. 1 is a perspective view for explaining an electronic component according to the present embodiment. FIG. 2 is an exploded perspective view for explaining the electronic component of FIG. 1. FIG. 3 is an exploded perspective view for explaining the body of the electronic component shown in FIG. 1. FIG. 4 is a cross-sectional view taken along the line IV-IV' of FIG. 1.

[0021] Referring to FIGS. 1 to 4, the electronic component (100) includes a first electrode and a second electrode separated from each other and a dielectric interposed between them. The first electrode and the second electrode are each multiple and can be stacked alternately. A dielectric is interposed between each electrode. The multiple first electrodes, second electrodes, and dielectrics form a stacked capacitor. The configuration of the electronic component will be described in detail below.

[0022] The electronic component (100) includes a body (or body) (110), a first external electrode (161), and a second external electrode (162).

[0023] The body (110) may be, for example, in the shape of a cuboid. Specifically, the body (110) may include six faces (M1, M2, F1, F2, C1, C2) as shown in FIG. 2. The first face (M1) and the second face (M2) face each other in the third direction (T) (or in the thickness direction of the body (110). When an electronic component (100) is mounted on a substrate, the first face (M1) or the second face (M2) may be the surface mounted on the substrate (i.e., the mounting surface). The third face (F1) and the fourth face (F2) face each other in the second direction (W) (or in the width direction of the body (110). The third face (F1) and the fourth face (F2) are connected to the first face (M1) and the second face (M2). The fifth surface (C1) and the sixth surface (C2) face each other in the first direction (L) (or in the longitudinal direction of the body (110). The fifth surface (C1) and the sixth surface (C2) are connected to the first surface (M1), the second surface (M2), the third surface (F1), and the fourth surface (F2).

[0024] As illustrated in FIG. 3, the body (110) includes a plurality of dielectric layers (111), a plurality of first internal electrodes (121), and a plurality of second internal electrodes (122). Specifically, a plurality of dielectric layers (111) are stacked, and a plurality of first internal electrodes (121) and a plurality of second internal electrodes (122) are alternately arranged with the dielectric layers (111) in between.

[0025] A plurality of dielectric layers (111) are in a sintered state and may be integrated to such an extent that the boundary between adjacent dielectric layers cannot be identified.

[0026] The dielectric layer (111) may include a ceramic material having a high dielectric constant. For example, the dielectric layer (111) may include barium titanate (BaTiO3) or strontium titanate (SrTiO3) powder, but is not limited thereto. That is, any material capable of obtaining sufficient capacitance can be applied as the material of the dielectric layer (111). Along with the ceramic powder, ceramic additives, organic solvents, organic binders, plasticizers, binders, and dispersants may be optionally added to the dielectric layer (111). Examples of ceramic additives include transition metal oxides or carbides, rare earth elements, magnesium (Mg), or aluminum (Al), but examples of ceramic additives are not limited thereto.

[0027] A plurality of first internal electrodes (121) and a plurality of second internal electrodes (122) overlap in a third direction (T) (or in the thickness direction of the body (110), and the overlapping area is related to the capacitance formation of the capacitor.

[0028] The first internal electrode (121) and the second internal electrode (122) may include nickel (Ni). The first internal electrode (121) and the second internal electrode (122) may have nickel as the main component, but may also include additional additives. For example, to increase the conductivity of the internal electrodes (121, 122) by reducing the formation of nickel oxide (NiO), at least one material selected from the group including Li, Na, and K may be used as the additive. Additionally, to improve the reliability of the internal electrodes (121, 122), at least one material selected from the group including Sn, Cu, Ag, Pb, Pt, Rh, Ir, Ru, Os, In, Ga, Zn, Bi, and Pb may be used as the additive. Furthermore, to make the interface composition of the internal electrodes (121, 122) uniform, at least one material selected from the group including Ba, Mg, Dy, and Ti may be used as the additive.

[0029] As illustrated in FIG. 4, a plurality of first internal electrodes (121) are exposed to the fifth surface (C1) and are electrically connected to the first external electrode (161). A plurality of second internal electrodes (122) are exposed to the sixth surface (C2) and are electrically connected to the second external electrode (162). When voltage is applied to the first external electrode (161) and the second external electrode (162), charge can be accumulated between the first internal electrode (121) and the second internal electrode (122) facing each other.

[0030] The body (110) may additionally include a lower cover layer (111L) located below the lowest internal electrode among a plurality of first internal electrodes (121) and a plurality of second internal electrodes (122). Additionally, the body (110) may additionally include an upper cover layer (111H) located above the uppermost internal electrode among a plurality of first internal electrodes (121) and a plurality of second internal electrodes (122). The lower cover layer (111L) and the upper cover layer (111H) are sintered together with a plurality of dielectric layers (111) and may be integrated to such an extent that the boundary between adjacent layers cannot be identified.

[0031] The lower cover layer (111L) and the upper cover layer (111H) may be formed by stacking a single dielectric layer or two or more dielectric layers in a third direction (T) (e.g., in the thickness direction of the body (110)). The lower cover layer (111L) and the upper cover layer (111H) serve to prevent damage to the first internal electrode (121) and the second internal electrode (122) from physical / chemical stress. Additionally, to eliminate mounting directionality, the thickness (TL) of the lower cover layer (111L) and the thickness (TH) of the upper cover layer (111H) may be formed to be the same, but are not limited thereto. The lower cover layer (111L) or the upper cover layer (111H) may have the same material and composition as the dielectric layer (111), but are not limited thereto.

[0032] The shape, dimensions, number of layers of the dielectric layer (111), number of layers of the first internal electrode (121) / second internal electrode (122), and thickness (TL, TH) of the lower / upper cover layer (111L, 111H) may vary depending on the design and are not limited to those illustrated.

[0033] The first external electrode (161) may include a first connection portion (161a), a first mounting portion (161b), and a first side portion (161c).

[0034] The first connection part (161a) is positioned on the fifth surface (C1) of the body (110) and is connected to a plurality of first internal electrodes (121) exposed to the fifth surface (C1). The first connection part (161a) can cover the entire fifth surface (C1) of the body (110).

[0035] The first mounting portion (161b) may extend from the first connecting portion (161a) to the first surface (M1) and the second surface (M2) of the body (110). The first mounting portion (161b) may partially cover the first surface (M1) and the second surface (M2) of the body (110).

[0036] The first side portion (161c) may extend from the first connection portion (161a) to the third side (F1) and the fourth side (F2) of the body (110). The first side portion (161c) may partially cover the third side (F1) and the fourth side (F2) of the body (110).

[0037] The first mounting portion (161b) may be parallel to the plane formed by the first internal electrode (121), and the first side portion (161c) may be perpendicular to the plane formed by the first internal electrode (121).

[0038] The first mounting portion (161b) disposed on the first surface (M1) of the body (110) and the first mounting portion (161b) disposed on the second surface (M2) of the body (110) may be symmetrical to each other in the third direction (T) with respect to the body (110). For example, the length in the first direction (L) (or second direction (W)) of the first mounting portion (161b) disposed on the first surface (M1) of the body (110) and the length in the first direction (L) (or second direction (W)) of the first mounting portion (161b) disposed on the second surface (M2) of the body (110) may be the same as each other.

[0039] Similarly, the first side portion (161c) positioned on the third side (F1) of the body (110) and the first side portion (161c) positioned on the fourth side (F2) of the body (110) may be symmetrical to each other in the second direction (W) with respect to the body (110). That is, the length in the first direction (L) (or third direction (T)) of the first side portion (161c) positioned on the third side (F1) of the body (110) and the length in the first direction (L) (or third direction (T)) of the first side portion (161c) positioned on the fourth side (F2) of the body (110) may be the same as each other.

[0040] Similar to the first external electrode (161), the second external electrode (162) may include a second connection portion (162a), a second mounting portion (162b), and a second side portion (162c).

[0041] The second connection part (162a) is positioned on the sixth surface (C2) of the body (110) and is connected to a plurality of second internal electrodes (122) exposed to the sixth surface (C2). The second connection part (162a) can cover the entire sixth surface (C2) of the body (110).

[0042] The second mounting portion (162b) may extend from the second connecting portion (162a) to the first surface (M1) and the second surface (M2) of the body (110). The second mounting portion (162b) may partially cover the first surface (M1) and the second surface (M2) of the body (110).

[0043] The second side portion (162c) may extend from the second connection portion (162a) to the third side (F1) and the fourth side (F2) of the body (110). The second side portion (162c) may partially cover the third side (F1) and the fourth side (F2) of the body (110).

[0044] The second mounting portion (162b) may be parallel to the plane formed by the second internal electrode (122), and the second side portion (162c) may be perpendicular to the plane formed by the second internal electrode (122).

[0045] The second mounting portion (162b) positioned on the first surface (M1) of the body (110) and the second mounting portion (162b) positioned on the second surface (M2) of the body (110) may be symmetrical to each other in the third direction (T) with respect to the body (110). The second side portion (162c) positioned on the third surface (F1) of the body (110) and the second side portion (162c) positioned on the fourth surface (F2) of the body (110) may be symmetrical to each other in the second direction (W) with respect to the body (110).

[0046] As described above, the first mounting portion (161b) / second mounting portion (162b) formed on the first surface (M1) of the body (110) and the first mounting portion (161b) / second mounting portion (162b) formed on the second surface (M2) of the body (110) have symmetry, and the thickness (TL) of the lower cover layer (111L) and the thickness (TH) of the upper cover layer (111H) can be formed to be the same. By doing so, mounting directionality can be eliminated when mounting the electronic component (100) on the substrate. That is, the first surface (M1) of the body (110) may be mounted so that it faces the substrate, and the second surface (M2) of the body (110) may be mounted so that it faces the substrate.

[0047] One side of the body (110) may be placed in the first internal space (IS1), and the other side of the body (110) may be placed in the second internal space (IS2).

[0048] The first external electrode (161) defines the first internal space (IS1). The first internal space (IS1) is determined by the first connection part (161a), the first mounting part (161b) and the first side part (161c) that are bent from the first connection part (161a). The space enclosed by the first connection part (161a), the first mounting part (161b), and the first side part (161c) becomes the first internal space (IS1). Specifically, the first connection part (161a) is rectangular in shape, and the first mounting part (161b) / first side part (161c) can be bent vertically from each side of the first connection part (161a), which is rectangular in shape, and extended long toward the second external electrode (162).

[0049] The second external electrode (162) defines the second internal space (IS2). The second internal space (IS2) is determined by the second connection part (162a), the second mounting part (162b) and the second side part (162c) that are bent from the second connection part (162a). The space enclosed by the second connection part (162a), the second mounting part (162b), and the second side part (162c) becomes the second internal space (IS2). Specifically, the second connection part (162a) is rectangular in shape, and the second mounting part (162b) / second side part (162c) can be bent vertically from each side of the second connection part (162a), which is rectangular in shape, and extended long toward the first external electrode (161).

[0050] Additionally, the first external electrode (161) and the second external electrode (162) may have a symmetrical shape with respect to the central part of the body (110).

[0051] For example, the first mounting portion (161b) of the first external electrode (161) disposed on the first surface (M1) of the body (110) and the second mounting portion (162b) of the second external electrode (162) disposed on the first surface (M1) of the body (110) may be symmetrical in the first direction (L) with respect to the body (110). Additionally, the first side portion (161c) of the first external electrode (161) disposed on the third surface (F1) of the body (110) and the second side portion (162c) of the second external electrode (162) disposed on the third surface (F1) of the body (110) may be symmetrical in the first direction (L) with respect to the body (110). Additionally, the first connection portion (161a) of the first external electrode (161) disposed on the fifth surface (C1) of the body (110) and the second connection portion (162a) of the second external electrode (162) disposed on the sixth surface (C2) of the body (110) may be symmetrical in the first direction (L) with respect to the body (110).

[0052] By the first and second external electrodes (161, 162), the fifth side (C1) and the sixth side (C2) of the body (110) are fully covered, but the first side (M1), the second side (M2), the third side (F1), and the fourth side (F2) of the body (110) may be partially exposed.

[0053] The first external electrode (161) and the second external electrode (162) may each include an electrode layer and a plating layer that are sequentially stacked.

[0054] The electrode layer (131) of the first external electrode (161) may be placed directly over the entire fifth surface (C1) of the body (110), the first surface (M1), the second surface (M2), the third surface (F1), and a portion of the fourth surface (F2) of the body (110). The electrode layer (132) of the second external electrode (162) may be placed directly over the entire sixth surface (C2) of the body (110), the first surface (M1), the second surface (M2), the third surface (F1), and a portion of the fourth surface (F2) of the body (110). The electrode layer (131) of the first external electrode (161) and the electrode layer (132) of the second external electrode (162) may be formed of substantially the same material and structure. The electrode layers (131, 132) may include at least one material of a conductive metal, for example, copper (Cu), nickel, gold, silver, platinum, and palladium, or an alloy thereof, but are not limited thereto. Additionally, the electrode layers (131, 132) may further include glass as an auxiliary material. The conductive metal ensures chip sealing and electrical connectivity with the chip, and the glass fills the empty space during the firing shrinkage of the conductive metal while simultaneously providing bonding strength between the first external electrode (161) and the body (110).

[0055] A plating layer (151) is disposed on the electrode layer (131) of the first external electrode (161), and a plating layer (152) is disposed on the electrode layer (132) of the second external electrode (162). The plating layers (151, 152) can be formed by electrolytic plating based on the electrode layers (131, 132) below them. As a result, the plating layers (151, 152) can have substantially the same pattern shape as the electrode layers (131, 132) below them.

[0056] The plating layer (151) of the first external electrode (161) and the plating layer (152) of the second external electrode (162) may be formed of substantially the same material and structure. The plating layer (151, 152) may include a nickel (Ni) plating layer and / or a tin (Sn) plating layer. The plating layer (151, 152) may include a nickel / tin alloy. In some embodiments, the plating layer (151, 152) may include two or more layers. For example, the plating layer (151, 152) may include a first plating layer formed on the electrode layer (131, 132) and containing nickel, and a second plating layer formed on the first plating layer and containing tin.

[0057] The electronic component (100) may include a sealing film (ST: ST_I, ST_O). The sealing film (ST) is placed on the surface or inside of a structure composed of a body (110) and an electrode layer (131) to prevent fluid from penetrating into the interior. For convenience of explanation, if the structure in which the electrode layer (131, 132) is formed on the body (110), that is, the structure excluding the plating layer (151, 152) in the electronic component (100), is defined as a microbody, the sealing film (ST) is placed on the surface and / or inside the microbody. The sealing film (ST) may include an external sealing film (ST_O) placed on the surface of the microbody and an internal sealing film (ST_I) placed inside the microbody.

[0058] An external sealing film (ST_O) may be placed on a step portion (STP) formed by the end of the electrode layer (131, 132) placed on the body (110) and the body (110). The external sealing film (ST_O) may be placed on the interface between the end of the electrode layer (131, 132) and the body (110) to cover the interface. The external sealing film (ST_O) may be placed on the first surface (M1), third surface (F1), second surface (M2), and fourth surface (F2) of the microbody where the end of the electrode layer (131, 132) is located. The external sealing film (ST_O) may be placed continuously to completely surround the interface between the end of the electrode layer (131, 132) and the body (110), but is not limited thereto and may be placed intermittently. The thickness of the outer sealing film (ST_O) (maximum height measured in the vertical direction from the interface with the electrode layer (131) or body (110)) may be 20 nm to 200 nm, but is not limited thereto.

[0059] When a microstructure includes micro-holes (OP: OP_H, OP_C) disposed therein, an internal sealing film (ST_I) may be disposed inside the micro-holes (OP). Below, the sealing film (ST) and the micro-holes (OP) of the microstructure will be described in more detail.

[0060] FIG. 5 is a partial cross-sectional view of a microstructure before the formation of a sealing film according to one embodiment. In FIG. 5, the size and arrangement of the micro-holes (OP) are depicted somewhat exaggerated for convenience of explanation. Additionally, FIG. 5 shows the portion where the electrode layer (131) of the first external electrode (161) is arranged, but it is obvious that the illustrated shapes can also be applied to the portion where the electrode layer (132) of the second external electrode (162) is arranged or to other portions.

[0061] Referring to FIGS. 4 and 5, the microbody of the electronic component (100) may include micro-holes (OP) inside. Micro-holes (OP) may be defined as a specific space formed by the failure of adjacent materials to form a complete bond. The materials constituting the microbody are separated from one another based on the micro-holes (OP). That is, micro-holes (OP) may form discontinuous sections of the materials.

[0062] Micropores (OPs) are empty spaces not occupied by solid material that can provide a space for fluids to reside or move. For example, some micropores (OPs) are large enough to provide a space through which liquids, such as plating solutions, can pass. Other micropores (OPs) are relatively very small, so liquids cannot pass through them but can provide a space through which gases can pass.

[0063] Micro-holes (OP) may be formed during the manufacturing process of the microbody. Micro-holes (OP) may be formed intentionally for a specific purpose, but they may also be formed unintentionally. For example, in manufacturing processes such as sintering or firing, it is intended that the material constituting the layer or electrode completely fills the space and solidifies or hardens; however, due to various variables of process conditions or limitations of the adopted process conditions, defects may occur where the constituent material fails to fill some of the space. Such defects may be placed inside the electronic component (100) in the form of micro-holes (OP). In addition, micro-holes (OP) may also be formed by cracks occurring during the manufacturing or handling process of the microbody, or by cracks caused by external impact.

[0064] Micropores (OPs) can have various shapes. For example, micropores (OPs) can have shapes such as gaps, tunnels, pores, or pits with uniform or non-uniform widths, and can also take the form of inter-interface excitations. Additionally, they can have island shapes such as spherical, elliptical, or amorphous, and can have straight, curved, or connected line shapes such as branches or roads. Micropores (OPs) can be observed through FE-SEM images, etc.

[0065] Micropores (OPs) can be placed at various locations within the microbody.

[0066] For example, micro-holes (OP) may be placed inside a specific component, such as the dielectric layer (111) of the body (110), the interior of the internal electrodes (121, 122), or the interior of the electrode layer (131). Specifically, components such as the dielectric layer (111), the internal electrodes (121, 122), and the electrode layer (131) may each be provided in a paste state and then solidified or hardened through sintering and / or firing. While the paste undergoes sintering and / or firing, it bonds together and becomes integrated in most areas, but in some cases, bonding does not occur in some areas, or it may be separated again after bonding. These unbonded areas may form micro-holes (OP).

[0067] As another example, micro-holes (OP) may be placed at the interface of heterogeneous materials, such as the interface between the dielectric layer (111) and the internal electrode (121, 122), the interface between the dielectric layer (111) and the electrode layer (131), and the interface between the internal electrode (121) and the electrode layer (131). Additionally, micro-holes (OP) may be placed at the interface of homogeneous materials, such as the interface between each unit dielectric layer (111) derived from a ceramic sheet. During the manufacturing process of the microbody, different materials solidify in close contact, and at most interfaces, the materials bond with each other and do not create empty spaces between them. However, if the materials fail to bond at some interfaces, that is, if a specific layer separates from another layer, the space may form micro-holes (OP).

[0068] Micro-holes (OPs) of the electronic component (100) may be placed at one or more locations selected from the various locations listed above. Additionally, a single micro-hole (OP) with connected spaces may be placed across two or more locations listed above. For example, some micro-holes (OPs) may extend from the interface between the dielectric layer (111) and the internal electrode (121, 122) through the dielectric layer (111) to the interface between the dielectric layer (111) and the electrode layer (131), and further penetrate the interior of the electrode layer (131) to open on the outer surface of the electrode layer (131).

[0069] Micro-holes (OP) can be distinguished based on whether they are open to the surface of the micro-body. Here, the surface of the micro-body includes the surface of the electrode layer (131) and the surface of the body (110), wherein in the region where the surface of the body (110) is covered by the electrode layer (131), the surface of the electrode layer (131) becomes the surface of the micro-body.

[0070] Micro-holes (OP) may include open micro-holes (OP_H) in which one spatially connected micro-hole (OP) opens to the surface of the microbody, and closed micro-holes (OP_C) in which one spatially connected micro-hole (OP) does not open through the surface of the microbody and the entire space is closed. Here, the distinction between closed and open types is based on the micro-hole (OP) itself defined by the microbody. That is, the micro-hole (OP) is defined by at least some of the constituent materials of the body (110), such as the dielectric layer (111) or internal electrodes (121, 122), and the constituent materials of the electrode layer (131). For example, when a micro-hole (OP) made of a dielectric layer (111), internal electrode (121, 122), electrode layer (131), etc., is opened on the surface of the body (110) or electrode layer (131), even if the opening entrance is blocked by a thin film or coating material, it corresponds to a surface opening (EN) when viewed as the micro-hole (OP) itself, so it is referred to as an open micro-hole (OP).

[0071] FIG. 6 is a schematic diagram showing a state in which a microbody containing open micro-holes is exposed to a fluid, and FIG. 7 is a schematic diagram showing a state in which a microbody containing closed micro-holes is exposed to a fluid.

[0072] Referring to FIGS. 6 and 7, intermediate structures (e.g., microstructures) of an electronic component (100) during the manufacturing process or the surface of a finished electronic component (100) may occasionally be exposed to a fluid. For example, the plating layer (151) of the electronic component (100) may be formed by an electrolytic plating method in which an electrode layer (131) is formed on a body (110) and then immersed in a plating solution, though not limited thereto. In this case, the microstructure, which is an intermediate structure of the electronic component (100), may be exposed to a liquid plating solution. In addition to being actively immersed in a liquid in this manner, the electronic component (100) or the microstructure may be exposed to moisture or other gases in the atmosphere.

[0073] In the case of a closed micro-hole (OP_C), as shown in FIG. 7, fluid penetration into the closed micro-hole (OP_C) can be fundamentally prevented because it is not spatially connected to the surface of the micro-body. On the other hand, in the case of an open micro-hole (OP_H), as shown in FIG. 6, there is room for fluid to penetrate into the open micro-hole (OP_H) through a surface opening (EN). Once fluid has penetrated into the micro-hole (OP) by any means, it can enter the interior along the extension direction of the micro-hole (OP). The penetrating fluid may come into contact with the dielectric layer (111), internal electrodes (121, 122), and / or electrode layer (131) around the micro-hole (OP), and may affect the contacted member. For example, if the penetrating fluid is a plating solution, it may electrochemically react with the internal electrodes (121, 122) or electrode layer (131) to change the properties of the electrodes. In addition, by-products such as hydrogen gas generated by the reaction can cause cracks inside the microbody as they expand in volume. Furthermore, there is a possibility that the penetrating fluid may react with the dielectric to lower the dielectric constant or generate by-products. As such, when the fluid comes into contact with the component inside the microbody, defects such as a decrease in the characteristics (e.g., breakdown voltage) of the electronic component (100) or the occurrence of cracks may occur. These defects can occur not only due to the plating solution but also due to moisture (e.g., water vapor or humidity) or other gases penetrating into the micro-hole (OP).

[0074] The possibility of fluid intrusion through such open micro-holes (OP_H) can be effectively blocked by filling the inside of the open micro-holes (OP_H) with a sealing film (ST) to close the fluid movement path.

[0075] FIG. 8 is a partial cross-sectional view showing the structure of the microbody of FIG. 5 in which a sealing film is formed. FIG. 9 is a schematic diagram showing the state in which a microbody in which a sealing film is formed inside an open micro-hole is exposed to a fluid.

[0076] Referring to FIG. 8, the electronic component (100) may include an internal sealing film (ST_I) and / or an external sealing film (ST_O). FIG. 8 illustrates an example in which both the internal sealing film (ST_I) and the external sealing film (ST_O) are formed, but the sealing film (ST) may include only the internal sealing film (ST_I) or only the external sealing film (ST_O). Whether the internal sealing film (ST_I) is formed in the electronic component (100) after the sealing film (ST) formation process is completed may be determined by whether the microstructure contains an open micro-hole (OP_H). The external sealing film (ST_O) may have a residual thickness and thickness determined by variables of the deposition thickness of the sealing film (ST_) and the surface removal process.

[0077] The internal sealing film (ST_I) is placed inside the open micropore (OP_H) among the micropores (OP). The internal sealing film (ST_I) fills at least partially the internal space of the open micropore (OP_H). For example, the internal sealing film (ST_I) can completely fill the internal space of the open micropore (OP_H). If the internal sealing film (ST_I) completely fills the internal space of the open micropore (OP_H), the empty space itself disappears, thereby fundamentally blocking the fluid passage.

[0078] The internal sealing film (ST_I) may fill only a portion of the internal space of the open micro-hole (OP_H). As shown in FIG. 9, even if the internal sealing film (ST_I) does not completely fill the internal space of the open micro-hole (OP_H) and defines a void that is an empty space (RM), if the entrance of the open micro-hole (OP_H) adjacent to the surface is closed to the extent that fluid movement is impossible, it becomes substantially the same as the closed micro-hole (OP_C) in terms of fluid movement path, thus blocking fluid from entering the open micro-hole (OP_H) from the surface.

[0079] An external sealing film (ST_O) may be placed on the interface between the end of the electrode layer (131) and the body (110). The external sealing film (ST_O) can perform the function of sealing the interface between the end of the electrode layer (131) and the body (110) to completely block the fluid passage. If the open micro-hole (OP_H) extends to the interface between the body (110) and the electrode layer (131), the sealing film (ST) may grow into the interior of the open micro-hole (OP_H). In this case, the external sealing film (ST_O) and the internal sealing film (ST_I) may have an interconnected structure.

[0080] The sealing thin film (ST) is deposited on surrounding members (dielectric layer (111), internal electrodes (121, 122), electrode layer (131)) by a vapor deposition process and can be bonded at least partially with the surrounding members. The bonding may include chemical bonding. Such chemical bonding can provide a stronger bonding force with the surrounding members than an organic coating layer formed through a coating and curing process.

[0081] The sealing film (ST) may be crystalline. Specifically, the sealing film (ST) may be wholly or at least partially crystallized during the deposition process. The crystallized sealing film (ST) forms a mechanically more robust film than the organic coating layer formed through the coating and curing process, and because it has superior encapsulation capabilities, it can effectively block fluid penetration.

[0082] The sealing film (ST) may include a water-repellent material. The contact angle of the sealing film (ST) may be, for example, 90° to 110°, but is not limited thereto. If the sealing film (ST) is water-repellent, it can more effectively prevent fluids such as plating solution or moisture from penetrating into the microbody.

[0083] In one embodiment, the sealing film (ST) may contain fluorine. Specifically, the sealing film (ST) may contain a fluorine-based organic material such as CxFy. The average thickness of the sealing film (ST) may vary depending on the location, but can be controlled within a range where the maximum thickness is 20 nm to 200 nm.

[0084] Below, the sealing thin film (ST) is described in more detail while explaining the manufacturing method of an exemplary electronic component (100).

[0085] FIGS. 10, FIGS. 11, FIGS. 13, FIGS. 15 and FIGS. 16 are cross-sectional views illustrating process steps of a method for manufacturing an electronic component according to one embodiment.

[0086] Referring to FIG. 10, first, a microbody comprising a body (110) and an electrode layer (131) is provided. The microbody can be manufactured by forming the body (110) and then forming the electrode layer (131) on the body (110).

[0087] The body (110) can be formed by various known methods. For example, a plurality of ceramic green sheets are prepared, and a conductive paste is applied to each ceramic green sheet using a printing method such as screen printing or gravure printing. Then, a plurality of ceramic green sheets are stacked, and the stacked ceramic green sheets and the conductive paste for internal electrodes (121, 122) are pressed together by applying pressure in the stacking direction. Then, the stacked bodies are cut at each region corresponding to the body (110) of a stacked capacitor to complete the body in an unsintered state. Then, the body is heat-treated to burn off the binder, and by firing in a reducing atmosphere, a sintered and / or fired body (110) can be obtained.

[0088] Next, an electrode layer (131) is formed on the body (110). The electrode layer (131) can be formed by applying a conductive paste or a conductive epoxy resin containing glass powder and a conductive material powder, such as at least one material among copper (Cu), nickel, gold, silver, platinum, and palladium or an alloy thereof, onto the body (110), and then firing it by high-temperature heat treatment to impart electrical properties.

[0089] The microbody, having completed the sintering and / or firing of the body (110) and the electrode layer (131), may contain micro-holes (OP) inside as described above. When manufacturing a plurality of microbodyes, some microbodyes may contain micro-holes (OP), while others may not contain micro-holes (OP). Some microbodyes containing micro-holes (OP) may contain only closed micro-holes (OP_C) without open micro-holes (OP_H), some microbodyes may contain only open micro-holes (OP_H) without closed micro-holes (OP_C), and the remaining microbodyes may contain both open micro-holes (OP_H) and closed micro-holes (OP_C).

[0090] In the case of a microbody that has no micropores (OP) or contains only closed micropores (OP_C) without open micropores (OP_H), since the plating solution does not penetrate or enter the interior of the microbody even when immersed in the plating solution during a subsequent plating process, a process for forming a sealing film (ST) to prevent fluid entry may be unnecessary. On the other hand, in the case of a microbody containing open micropores (OP_H), a process for forming a sealing film (ST) to prevent fluid entry may be preferably adopted.

[0091] If it is possible to determine whether open micro-holes (OP_H) are present through an inspection process after manufacturing micro-body, it would be efficient to select only the micro-body containing open micro-holes (OP_H) and proceed with the sealing film (ST) formation process. However, since micro-body has a very small size, it is not easy to inspect for the presence of open micro-holes (OP_H), and the process cost may be high. Furthermore, even if micro-body containing open micro-holes (OP_H) is identified, selectively selecting them from multiple micro-bodys may also be inefficient from a process perspective. Rather, proceeding with the sealing film (ST) formation process on all manufactured micro-body without an inspection or selection process for the presence of open micro-holes (OP_H) can reduce the overall process defect rate and improve process efficiency. When a sealing film (ST) formation process is performed on a microbody without open micro-holes (OP_H), only an external sealing film (ST_O) is formed without an internal sealing film (ST_I). Since the external sealing film (ST_O) performs the function of preventing fluid inflow between the body (110) and the electrode layer (131) in the finished electronic component (100) as well as the plating process, the advantage of increasing the reliability of the electronic component (100) without any side effects can be added.

[0092] In the above view, a method for manufacturing an electronic component (100) according to one embodiment may include a sealing thin film (ST_) formation process that proceeds without an inspection process for whether there is an open micro-hole (OP_H) on a microbody that has finished firing.

[0093] Referring to FIG. 11, the process for forming a sealing thin film (ST) can be carried out by vapor deposition processes such as CVD, PECVD (or plasma deposition apparatus), PVD, ALD, etc. To explain the case where the sealing thin film (ST) formation process is carried out by PECVD as an example, first, a microstructure is placed inside a PECVD apparatus. As a source gas, a CxFy gas such as C3F6, for example, can be used. When a plasma is generated inside the PECVD apparatus and the deposition process is carried out, a CxFy material can be deposited on the surface of the microstructure.

[0094] The thickness of the sealing film (ST) may be related to the deposition direction. Generally, if the deposition surface faces the electric field direction of the shower head of the PECVD equipment and the plasma generating device, the sealing film (ST) may be deposited more thickly. The microbody has a rectangular shape, for example, if the second surface (M2) faces the shower head of the PECVD equipment and the opposite surface, the first surface (M1), faces the bottom, the second surface (M2) facing the shower head may have a sealing film (ST) of sufficient thickness deposited, whereas the third to sixth surfaces (F1, F2, C1, C2) perpendicular to the second surface (M2) may have a sealing film (ST) of smaller thickness formed thereon. If the first surface (M1) is in contact with a member such as a support or a mounting part of the PECVD equipment, almost no sealing film (ST) may be formed on the first surface (M1).

[0095] In a state where it is not known which side of the microbody the open microhole (OP_H) will open, it would be desirable to form a film of uniform thickness on all sides of the microbody for stable sealing of the open microhole (OP_H). As one method for such uniform film formation, a method may be adopted in which the deposition process is performed while changing the position of each side without fixing the face of the microbody opposite to the showerhead, etc.

[0096] An exemplary method of changing the deposition surface is illustrated in FIG. 12. FIG. 12 is a schematic diagram illustrating a process for forming a sealing thin film of an electronic component according to one embodiment. FIG. 12 illustrates a rotary deposition process in which a plurality of micro-body units rotate and perform a deposition process within a barrel-type PECVD equipment (200). As illustrated in FIG. 12, when micro-body units are placed inside a barrel and the deposition process is performed while rotating the barrel, each face of the micro-body unit rotates regularly or randomly, so that generally uniform deposition can be achieved on all faces of the micro-body unit.

[0097] Referring to FIG. 13, a deposition material (CxFy) within a PECVD apparatus can be deposited and bonded onto a microbody, and then formed into a sealing film (ST_W) as it grows in the thickness direction. The sealing film (ST_W) is formed on the entire surface of the microbody. That is, the sealing film (ST_W) can be formed on the exposed portion of the electrode layer (131) and the body (110) that is not covered by the electrode layer (131). The sealing film (ST_W) can be formed to cover the entire surface (outer surface) of the exposed dielectric layer (111) of the body (110) as well as the exposed surface (outer surface) of the electrode layer (131). A step portion (STP) corresponding to the thickness of the electrode layer (131) is defined between the end of the electrode layer (131) and the body (110), and the sealing film (ST_W) can be formed conformally along the step portion (STP).

[0098] The sealing film (ST_W) can have a uniform thickness over the entire surface of the microbody. The thickness of the deposited sealing film (ST_W) can be controlled through process time or condition control. The average thickness of the sealing film (ST_W) deposited on the microbody can be determined within a range sufficient to sufficiently close the entrance of the open microhole (OP_H). Although the thickness of the sealing film (ST_W) satisfying the above conditions may vary depending on the size of the open microhole (OP_H), experimentally confirmed on a number of microbodys formed under general process conditions showed that when the average thickness of the sealing film (ST_W) was set in the range of 20 nm to 200 nm, the degradation of the electronic component (100) due to fluid penetration was significantly reduced.

[0099] FIG. 14 is a partial cross-sectional view illustrating the growth direction of a sealing thin film. Referring to FIG. 14, a microbody is exposed to a vapor-phase deposition material within a PECVD deposition apparatus. When the deposition material comes into contact with the surface of the microbody, it can bond to the surface of the microbody. The vapor-phase deposition material can bond by contacting the outer surface of the microbody exposed to the outside. In addition, since the vapor-phase deposition material can penetrate and enter the interior of the open microhole (OP_H), it can also bond by contacting the inner wall of the open microhole (OP_H).

[0100] As the deposition process continues, the vapor deposition material may come into contact with and bond to the deposition material already bonded to the microbody. Through this process, the sealing thin film (ST_) is grown. The main growth direction of the sealing thin film (ST_) may be generally perpendicular to the deposition surface, as shown in FIG. 14.

[0101] On the outer surface of the microbody, the sealing film (ST_W) grows in an outward direction. Since there are no structures on the outer surface of the microbody that hinder growth, the sealing film (ST_W) can generally grow to a thickness corresponding to a preset thickness.

[0102] In the case of an open microhole (OP_H), a sealing film (ST_W) grows in a vertical direction from the inner wall. The sealing film (ST_W) can grow from the entire inner circumference of the inner wall of the open microhole (OP_H) toward the center.

[0103] As the sealing film (ST_t) grows inside the open micropore (OP_H), the void space (RM) within the open micropore (OP_H) gradually decreases. Even if the size of the void space (RM) decreases, as long as the void space (RM) remains, the vapor phase deposition material can communicate with the inside and outside of the open micropore (OP_H) through that space. Therefore, additional film deposition is possible even in the inner space of the region where the film has already been deposited.

[0104] As the sealing film (ST_W) grows further inside the open microhole (OP_H), it may come into contact with the sealing film (ST_) growing opposite it. During the deposition process, the conditions under which sealing films (ST_W) growing in different directions on the inner wall of the open microhole (OP_H) can come into contact with each other are related to the set film thickness (thickness relative to the outer surface) and the minimum inner diameter of the open microhole (OP_H). For example, assuming that the film deposition rate on the outer surface of the microbody and inside the open microhole (OP_H) are the same, sealing films (ST_W) growing in different directions on the inner wall of the microhole (OP) will be able to come into contact with each other when the inner diameter of the open microhole (OP_H) is less than or equal to half of the set film thickness. If the film deposition rate inside the open micro-hole (OP_H) is on average 1 / 2 compared to the outer surface, then the inner diameter of the open micro-hole (OP_H) being less than or equal to the set film deposition thickness will be a necessary condition for the sealing films (ST_W) to come into contact at the center inside the open micro-hole (OP_H). In other words, the film deposition thickness of the sealing film (ST_W) can be set to a level that can close the open micro-hole (OP_H) at least through the deposition process, taking into account the size of the open micro-hole (OP_H) and the film deposition rate inside it.

[0105] Sealing thin films (ST_W) that are in contact with each other can bond together at the junction. When the sealing thin films (ST_W) growing facing each other are completely bonded without gaps, space closure can occur in that region. Therefore, from that point on, even if the deposition material in the gas phase cannot enter the interior of the closed region, so film formation inside it does not proceed further. If a void space (RM) remains inside the closed region at the time of closure, the void space (RM) inside may remain even if the deposition process continues thereafter. On the other hand, if a void space (RM) connected to the opening of an open micro-hole (OP_H) remains outside the closed region at the time of closure, film formation can continue unless additional entrance closure occurs.

[0106] Referring to FIG. 15, a process for removing the sealing film (ST_W) follows the process for forming the sealing film (ST_W). The process for removing the sealing film (ST_W) may be a process for removing the sealing film (ST_W) at least partially. The process for removing the sealing film (ST_W) is performed to remove the sealing film (ST_W) placed on the electrode layer (131). A plating layer (151) is formed on the electrode layer (131), and if the electrode layer (131) is covered by the sealing film (ST_W), it is difficult to perform the plating process smoothly. In addition, if the sealing film (ST_W) remains on the electrode layer (131), the electrical resistance between the plating layer (151) placed thereon and the electrode layer (131) may increase. Therefore, by removing the sealing film (ST_W) covering the electrode layer (131) through this process, the subsequent plating process can be facilitated and the increase in electrical resistance between the electrode layer (131) and the plating layer (151) can be prevented.

[0107] The sealing film (ST_W) removal process is performed under conditions that leave the sealing film (ST_W) formed inside the open micro-hole (OP_H) intact. Since removing the sealing film (ST_W) formed inside the open micro-hole (OP_H) together would prevent the prevention of plating solution penetration during the subsequent plating process, it is desirable to select a removal process that removes the sealing film (ST_W) formed on the outer surface of the microbody while simultaneously leaving the sealing film (ST_W) formed inside the open micro-hole (OP_H) intact.

[0108] Dry polishing can be cited as an example of a process for removing the sealing film (ST_W) that satisfies the above conditions. An example of dry polishing is mechanical (or physical) polishing. The mechanical polishing process can be carried out by physically separating the sealing film (ST_W) by colliding abrasive particles (ABR) with a microbody on which the sealing film (ST_W) is formed.

[0109] The mechanical polishing process can be carried out inside a barrel. That is, a plurality of micro-bodies having a sealing film (ST_) formed thereon can be placed inside a barrel, and the process can proceed by rotating the barrel to rotate the micro-bodies while striking the micro-bodies with abrasive particles (ABR) (or abrasives). In the case of such a barrel polishing method, not only is uniform polishing of all surfaces of the micro-bodies possible, but polishing of multiple micro-bodies can also be performed simultaneously, thereby improving process efficiency. In addition to barrel polishing, various mechanical polishing processes known in the art, such as sandblasting, can be applied for the partial removal of the sealing film (ST_W).

[0110] Abrasive particles (ABR) can be composed of inorganic materials such as sand, glass, and metal, or resins such as silicon, but are not limited thereto, and abrasive particles (ABR) of various materials used in mechanical polishing can be applied.

[0111] The shape of the abrasive particles (ABR) can be spherical, elliptical, etc., but is not limited thereto, and various shapes such as amorphous can be applied as the shape of the abrasive particles (ABR).

[0112] The size of the abrasive particles (ABR) may be 1 mm or less, although not limited thereto. In some embodiments, the diameter of the abrasive particles (ABR) may be in the range of 0.5 mm to 0.8 mm. For example, abrasive particles (ABR) with an average diameter of 0.7 mm may be used in the mechanical polishing process, or abrasive particles (ABR) of 0.6 mm may be used.

[0113] Polishing conditions, including polishing time, can be set and performed such that the sealing film (ST_W) formed on the metal layer is completely removed and the electrode layer (131) is exposed to the outside.

[0114] Figure 16 is a cross-sectional view of a microbody after the partial removal process of the sealing thin film is completed.

[0115] Referring to FIG. 16, most of the sealing film formed on the outer surface of the microbody is removed through a sealing film removal process, and the outer surface of the microbody is exposed. The sealing film formed inside the open microhole (OP_H) may remain unremoved because it is not directly struck by the abrasive particles (ABR). The sealing film remaining inside the open microhole (OP_H) becomes the internal sealing film (ST_I) described above.

[0116] Meanwhile, at the step portion (STP) between the end of the electrode layer (131) and the body (110), the side of the electrode layer (131) can act as a shadow for the abrasive particles (ABR). Additionally, since the abrasive particles (ABR) have a predetermined size, the inner corner portion of the step portion (STP), which has a relatively narrow width, may not be exposed to physical impact by the abrasive particles (ABR). As a result, the sealing film placed on the interface between the end of the electrode layer (131) and the body (110) may not be removed despite mechanical polishing, and at least a portion may remain. The sealing film (ST_) remaining on the interface between the end of the electrode layer (131) and the body (110) becomes the external sealing film (ST_O) described above. The maximum thickness of the external sealing film (ST_O) may be substantially the same as the formation thickness of the sealing film (ST_W).

[0117] After the sealing film removal process, a plating layer (151) is formed on the electrode layer (131) to form an electronic component (100) as shown in FIG. 4. The plating layer (151) can be formed through a plating process in which a microbody is immersed in a plating solution. Through the sealing film removal process, the sealing film on the outer surface of the electrode layer (131) is removed and the outer surface of the electrode layer (131) is exposed, so the formation of the plating layer (151) can be carried out smoothly. In addition, since the open micro-holes (OP_H) of the microbody are closed by the internal sealing film (ST_I), the plating solution can be blocked from entering the interior of the microbody through the open micro-holes (OP_H). Also, since an external sealing film (ST_O) is formed on the interface between the end of the electrode layer (131) and the body (110), the penetration of the plating solution into the interior through the interface can be prevented at the source.

[0118] The internal sealing film (ST_I) described above can be placed inside the open micro-hole (OP_H) in various forms depending on the shape and size of the open micro-hole (OP_H), and the process conditions during the formation of the sealing film. Several exemplary forms of the internal sealing film (ST_I) are shown in FIG. 17.

[0119] FIG. 17 is a cross-sectional view of an internal sealing thin film of an electronic component according to various embodiments.

[0120] FIG. 17(a) illustrates a form in which the interior of an open micro-hole (OP_H) is completely filled by an internal sealing film (ST_I). When the deposition material is evenly spread into the interior of the open micro-hole (OP_H) during the formation process of the sealing film (ST_), and growth occurs sequentially starting from the inside, it can be formed in a form as shown in FIG. 17(a). In this way, when the interior of the open micro-hole (OP_H) is completely filled by an internal sealing film (ST_I), the internal sealing film (ST_I) can have high mechanical strength.

[0121] FIG. 17(b) illustrates a case where a certain section from the surface opening (EN) of an open microhole (OP_H) is completely filled by an internal sealing film (ST_I) to define a closed region, but a void, which is an empty space (RM), remains inside the closed point. When the entrance is closed before the deposited material completely fills the internal space of the open microhole (OP_H), an internal sealing film (ST_I) of the form shown in FIG. 17(b) can be formed.

[0122] FIG. 17(c) illustrates a case where two or more closed regions are formed, leaving two or more mutually separated voids (RM) within the open micropore (OP_H). If primary closure occurs at a relatively deep location, followed by secondary and tertiary closures sequentially at a shallower location, an internal sealing film (ST_I) of the form shown in FIG. 17(c) can be formed.

[0123] As shown in FIG. 17(a), the inside of the open micro-hole (OP_H) is completely filled with an internal sealing film (ST_I), but as shown in FIG. 17(b) and FIG. 17(c), a void (RM) is formed inside the open micro-hole (OP_H). Since the entrance of the open micro-hole (OP_H) is closed, fluid penetration such as plating solution can be prevented. In addition, the void included in FIG. 17(b) and FIG. 17(c), together with the closed micro-hole (OP_C), can serve to relieve stress applied by external impact or expansion of the electronic component (100).

[0124] Since the above-described embodiments utilize a vapor deposition method to form an internal sealing thin film (ST_I), the entrance of the open micro-hole (OP_H) can be effectively closed, thereby completely blocking fluid infiltration. This vapor deposition method offers advantages over the wet method of forming a coating layer in terms of the reliability of blocking the entrance of the open micro-hole (OP_H). This will be explained in detail below.

[0125] FIG. 18 is a cross-sectional view illustrating a method of forming a coating layer in an open micropore by a wet method. The method of forming a coating layer by a wet method may include the step of filling an organic composition (ORL) into an open micropore (OP_H) (see FIG. 18(a)) and the step of drying and / or curing the organic composition (ORL) (see FIG. 18(b)).

[0126] The organic composition (ORL) is provided in a liquid state. The step of filling the organic composition (ORL) into the open micropore (OP_H) can be carried out by immersing the microbody in the liquid organic composition (ORL). A drying and / or curing process is required for the organic composition (ORL) to remain as an organic coating layer (ORC). The liquid component of the organic composition (ORL) evaporates or volatilizes through the drying and / or curing process, leaving the solid component to form the coating layer (ORC). As the volume of the organic composition (ORL) decreases through the above process, the solid component may not remain at the entrance of the open micropore (OP_H), which serves as a passage for the liquid component to evaporate, as illustrated in FIG. 18(b). In this case, the inner core of the open micropore (OP_H) may be filled by the coating layer (ORC), but the surface opening (EN) may still remain open. Therefore, even after the formation of the coating layer (ORC), the fluid penetration pathways inside the microbody may not be completely blocked.

[0127] On the other hand, in the case of the internal sealing thin films (ST_I) shown in FIG. 17, even though they form a void space (RM) inside the open micro-hole (OP_H), at least the surface opening (EN) of the open micro-hole (OP_H) can be reliably closed. Therefore, higher sealing reliability can be achieved.

[0128] FIG. 19 is a cross-sectional view of an electronic component according to another embodiment.

[0129] Referring to FIG. 19, the electronic component (101) according to the present embodiment differs from the embodiment of FIG. 4 in that it has no external sealing film (ST_O) and the internal sealing film (ST_I) is positioned at a predetermined distance from the surface opening (EN) of the open micro-hole (OP_H). The end of the internal sealing film (ST_I) is positioned at a predetermined depth from the surface opening (EN) of the open micro-hole (OP_H), but forms a closed section in at least the positioned area. Thus, fluid can penetrate up to the groove defined by the open micro-hole (OP_H) and the internal sealing film (ST_I), but further entry into the interior can be prevented. The distance at which the internal sealing film (ST_I) is positioned at the surface opening (EN) of the open micro-hole (OP_H) may be 100 nm or less, but is not limited thereto. When the surface opening (EN) of the open micro-hole (OP_H) is located in the electrode layer (131), the plating layer (151) can fill the space where the internal sealing thin film (ST_I) has receded.

[0130] The electronic component (101) illustrated in FIG. 19 can be manufactured by performing the sealing thin film formation process in the same manner as in the previous embodiment, but by performing the sealing thin film removal process using methods such as dry etching or wet etching instead of dry polishing.

[0131] To explain the wet etching process as an example, the sealing film (ST_W) is etched through all sides of the microbody by immersing the resulting object of FIG. 13 in an etching solution or spraying the etching solution. The thickness of the sealing film (ST_W) etched will generally be proportional to the exposure time to the etching solution, that is, the etching time. The etching time is set with the goal of removing all of the sealing film (ST_W) on the electrode layer (131). When all of the sealing film (ST_W) on the electrode layer (131) is removed, the sealing film (ST_W) placed on other sides of the microbody having a similar thickness may also be removed together. Additionally, the sealing film (ST_W) placed on the step portion (STP) between the end of the electrode layer (131) and the body (110) may also be removed by the etching solution.

[0132] Meanwhile, even in the area where the open micro-hole (OP_H) is formed, the sealing film (ST_) is laminated with a uniform thickness in the direction of the outer surface, so the end of the inner sealing film (ST_I) may be exposed when the sealing film (ST_W) on the electrode layer (131) is removed. If the etching process is stopped at this point, the inner sealing film (ST_I) can remain without receding from the surface opening (EN) of the open micro-hole (OP_H) as in the embodiment of FIG. 16.

[0133] In order to ensure the complete removal of the sealing film (ST_W) on the electrode layer (131), an over-etching process may be performed for a predetermined additional time, in which case the internal sealing film (ST_I) may be exposed to the etching solution during the over-etching and further etched. Accordingly, as shown in FIG. 19, the internal sealing film (ST_I) may remain in a position positioned at a predetermined depth retracted from the surface opening (EN) of the open micro-hole (OP_H).

[0134] If over-etching is performed for too long, the internal sealing thin film (ST_I) may be excessively etched and completely removed, or the entrance of the open micro-hole (OP_H) may not be closed as shown in FIG. 18(c); therefore, the over-etching time can be adjusted so that the internal sealing thin film (ST_I) has a retraction distance within an appropriate range (e.g., 100 nm or less).

[0135] The examples are described in more detail below through manufacturing examples and experimental examples.

[0136] <Preparation Example 1>

[0137] A microbody including a body and an electrode layer was prepared by the method described with reference to FIG. 10. A specimen was prepared from the microbody prepared using a scanning ion beam (FIB).

[0138] <Preparation Example 2>

[0139] Electronic components were manufactured using the method described with reference to FIGS. 10, 11, 13, 15, and 16. The sealing thin film formation process was carried out in a barrel-type PECVD apparatus using C3F6 as the source gas. Process conditions were set so that the average deposition thickness of the deposited material was 100 nm. The sealing thin film removal process was carried out in a barrel-type mechanical polishing device. The average size of the polishing particles used was 0.7 mm. After completing the sealing thin film removal process, a plating layer was formed to complete the electronic components.

[0140] A specimen was prepared from an electronic component manufactured using a scanning ion beam (FIB).

[0141] <Preparation Examples 3 to 5>

[0142] Electronic components were manufactured in the same manner as in Example 2, except that the average deposition thickness of the deposition material was changed to 15 nm (Example 3), 60 nm (Example 4), and 300 nm (Example 5).

[0143] <Preparation Example 6>

[0144] Electronic components were manufactured by directly forming a plating layer on a microbody without a sealing thin film formation process and a sealing thin film removal process.

[0145] <Experimental Example>

[0146] Break Down Voltage (BDV) was investigated for multiple samples according to Preparation Example 1, and the results are shown in Table 1 below.

[0147] division Preparation Example 1 Preparation Example 2 Preparation Example 3 Preparation Example 4 Preparation Example 5 Preparation Example 6 min (V) 38 22 6 9 24 2 avg (V) 89 90 89 89 89 89 Occupancy rate (ppm) below 38V - 7,732 24,169 20,619 7,692 23,936

[0148] In Table 1 above, "min" represents the minimum BDV value measured in the corresponding manufacturing example, and "avg" represents the average BDV value of the corresponding manufacturing examples. Referring to Table 1, Manufacturing Example 1, which was not exposed to the plating process, showed a relatively higher minimum BDV value compared to Manufacturing Examples 2 to 6, which underwent the plating process. The "share of 38V or less" in Table 1 represents the proportion of samples in each manufacturing example that exhibited BDV characteristics less than or equal to 38V, which is the minimum BDV value of Manufacturing Example 1. A smaller "share of 38V or less" indicates superior BDV characteristics. Referring to Table 1, among the manufacturing examples that underwent the plating process, Manufacturing Example 6, which omitted the sealing thin film formation process, and Manufacturing Example 3, in which the average deposition thickness of the sealing thin film was less than 20 nm, showed a relatively large "share of 38V or less" of approximately 24,000 ppm. On the other hand, Preparation Examples 2, 4, and 5, in which the average deposition thickness of the sealing thin film was 20 nm or more, showed a relatively small "occupancy rate of 38 V or less," indicating generally better BDV characteristics. Although Preparation Example 5, in which the average deposition thickness of the deposition material was 300 nm, required approximately three times more processing time than Preparation Example 2, in which the average deposition thickness of the deposition material was 100 nm, the "occupancy rate of 38 V or less" was similar to that of Preparation Example 2.

[0149] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the above embodiments and can be manufactured in various different forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical concept or essential features of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0150] 100: Electronic components 110: Body 111: Dielectric layer 111H: Upper cover layer 111L: Lower cover layer 121: First internal electrode 122: Second internal electrode 131, 132 electrode layers 151, 152: Plating layer 161: First external electrode 162: Second external electrode ST: Sealing film OP: Micro-holes

Claims

Claim 1 An electronic component comprising: a body including a plurality of internal electrodes disposed with a plurality of stacked dielectric layers and a corresponding dielectric layer between them, and an electrode layer disposed on the outer surface of the body and connected to some of the plurality of internal electrodes; and a sealing film, wherein the microbody includes an open microhole defined by at least some of the dielectric layer, the internal electrode, and the electrode layer and opening through the surface of the microbody, and a closed microhole defined by at least some of the dielectric layer, the internal electrode, and the electrode layer and not opening through the surface of the microbody, and the sealing film includes an internal sealing film that at least partially fills the interior of the open microhole and closes the entrance of the open microhole. Claim 2 In claim 1, the internal sealing film is an electronic component that completely fills the interior of the open micro-hole. Claim 3 An electronic component according to claim 1, wherein the open micro-hole includes an empty space that is not filled by the internal sealing film, and the empty space is located inside the area closed by the internal sealing film. Claim 4 delete Claim 5 In claim 1, the internal sealing film is an electronic component not disposed within the closed micro-hole. Claim 6 An electronic component according to claim 1, wherein the sealing thin film further comprises an external sealing thin film disposed on the interface between the end of the electrode layer and the body. Claim 7 In claim 6, the electronic component wherein the outer sealing film is made of the same material as the inner sealing film. Claim 8 In claim 7, the inner sealing film and the outer sealing film are electronic components containing fluorine. Claim 9 In claim 7, the electronic component wherein the inner sealing film and the outer sealing film are at least partially crystallized. Claim 10 An electronic component according to claim 1, further comprising a plating layer disposed on the electrode layer, wherein the sealing thin film is not disposed between the electrode layer and the plating layer. Claim 11 In claim 1, the internal sealing film is an electronic component positioned in the depth direction retracted from the surface opening of the open micro-hole. Claim 12 In claim 11, the sealing thin film is an electronic component that is not disposed on the outer surface of the microbody. Claim 13 An electronic component comprising: a body including a plurality of stacked dielectric layers and a plurality of internal electrodes disposed with the corresponding dielectric layers in between; an external electrode including an electrode layer disposed on the body and disposed to be electrically connected to the corresponding internal electrodes, and a plating layer disposed on the electrode layer; wherein micro-holes exist on the outer surface of at least a portion of the body and the electrode layers, an internal sealing film is disposed inside the micro-holes, and an external sealing film is disposed on the interface between the end of the electrode layer and the body, and the internal sealing film and the external sealing film contain fluorine. Claim 14 delete Claim 15 In claim 13, the external sealing film is an electronic component that is at least partially crystallized. Claim 16 An electronic component according to claim 13, wherein the maximum thickness of the outer sealing thin film is 20 nm to 200 nm. Claim 17 A method for manufacturing an electronic component comprising: a step of providing a microbody including a plurality of internal electrodes disposed between a plurality of stacked dielectric layers and a corresponding dielectric layer, and an electrode layer disposed on the outer surface of the body and connected to some of the plurality of internal electrodes; a step of forming a sealing thin film containing fluorine on the microbody by a vapor deposition process; and a step of removing the sealing thin film at least partially, wherein the step of forming the sealing thin film is performed in a barrel-type plasma deposition apparatus using CxFy as a source gas, and the vapor deposition process is performed while rotating the barrel-type plasma deposition apparatus into which the microbody is introduced. Claim 18 delete Claim 19 In claim 17, the step of at least partially removing the sealing thin film comprises a dry polishing process, in a method for manufacturing an electronic component. Claim 20 A method for manufacturing an electronic component according to claim 17, further comprising the step of forming a plating layer on the electrode layer after at least partially removing the sealing thin film.

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