Scanning probe microscope, sample observation processing system, and electrical property evaluation device

Abstract

The scanning probe microscope aims to improve the visibility of markers even during wide-area and high-speed observation by a magnifying observation processing device, and places markers around the center of the region of interest so as to match the observation field aspect ratio and observation angle of the magnifying observation processing device. In addition, the markers are formed, for example, by multiline scratch marks to emphasize edge contrast.

Description

Technology Field

[0001] The present invention relates to a scanning probe microscope device, a sample observation and processing system, and an electrical characteristic evaluation device, which are designed to observe or process a field of view identical to a region of interest measured using a scanning probe microscope in a magnified observation and processing device, and have a function of forming a marker around the region of interest. Background Technology

[0002] Scanning probe microscopes have been used to form markers, such as indentations or scratch marks, around a region of interest for the purpose of observing or processing the same field of view as the region of interest measured using the scanning probe microscope (SPM) in another magnified observation processing device. Generally, when forming markers around a region of interest measured using a scanning probe microscope, the markers are often formed at a distance to take into account the influence on the region of interest. In addition, as in Patent Document 1 and Patent Document 2, a high-precision electric stage or a special probe array was used to correct the positional misalignment between the marker and the region of interest caused by the positional misalignment during probe exchange in order to exchange a dedicated probe when forming the marker. Prior art literature

[0003] Japanese Patent Publication No. 2002-139414 Japanese Patent Publication No. 2017-201304 The problem to be solved

[0004] When the region of interest measured using a scanning probe microscope is a narrow region, the approximate location of the region of interest can be determined by using a marker. However, if one intends to precisely align the center position or field of view rotation angle of the region of interest using a magnifying processing device, it is necessary to align the region of interest while observing the surrounding area in a narrow region using the magnifying processing device, and there was a problem in that the region of interest was altered during the alignment process. Here, alteration refers collectively to deformation of the region of interest of the sample due to electron beam damage, adhesion of a carbon contaminant layer to the region of interest by observation using a scanning electron microscope (SEM), and charging.

[0005] Other problems and novel features will become clear from the description in this specification and the accompanying drawings. means of solving the problem

[0006] A brief overview of a representative invention is as follows.

[0007] A scanning probe microscope according to one embodiment of the present invention aims to improve the visibility of markers even during wide-area and high-speed observation by a magnifying observation processing device, and places markers around a region of interest so as to match the observation field aspect ratio and observation angle of the magnifying observation processing device. In addition, the markers are formed by multiline scratch marks, for example, to emphasize edge contrast. Effects of the invention

[0008] According to the present invention, the visibility of a marker can be improved even during wide-area and high-speed observation by a magnifying observation processing device. Accordingly, even between a scanning probe microscope that does not have a high-precision motorized stage and a magnifying observation processing device, the center position and field of view of the region of interest can be easily determined by wide-area observation by the magnifying observation processing device using a marker with high visibility, without the need for alignment by a high-precision motorized stage or probe array. Subsequently, the region of interest can be captured at high magnification in one go by the magnification zoom of the magnifying observation processing device, and observation or processing of the region of interest, or both, can be performed while minimizing the degradation of the region of interest by the magnifying observation processing device. Brief explanation of the drawing

[0009] FIG. 1 is an overall configuration diagram showing an example of the configuration of a sample scanning type scanning probe microscope according to an embodiment. FIG. 2 is an overall configuration diagram showing an example of the configuration of a probe scanning type scanning probe microscope according to an embodiment. FIG. 3 is a flowchart showing the sequence of observation or processing of the same location from the scanning probe microscope shown in FIG. 1 and FIG. 2 to the magnified observation processing device. FIG. 4 is a diagram illustrating Example 1 of the configuration of a sample observation processing system according to an embodiment. FIG. 5 is a diagram illustrating Example 2 of the configuration of a sample observation processing system according to an embodiment. FIG. 6 is a diagram illustrating Example 3 of the configuration of a sample observation processing system according to an embodiment. FIG. 7 is a drawing illustrating an example of marker placement according to an embodiment. FIG. 8 is a drawing illustrating an example of the shape of a marker according to an embodiment. FIG. 9 is a diagram illustrating the correction of positional misalignment before and after the replacement of the marking probe. FIG. 10 is a drawing showing configuration example 1 of a marking setting screen according to an embodiment. FIG. 11 is a drawing showing configuration example 2 of a marking setting screen according to an embodiment. Specific details for implementing the invention

[0010] The following describes embodiments with reference to the drawings. However, in the following description, the same reference numerals are assigned to identical components, and repetitive descriptions may be omitted. Additionally, the drawings may be schematically depicted relative to actual embodiments to make the explanation clearer, but this is merely an example and does not limit the interpretation of the present invention.

[0011] Examples

[0012] (Example of the overall configuration of a scanning probe microscope)

[0013] In this embodiment, a basic embodiment is described. FIG. 1 shows a configuration diagram of a sample scanning type scanning probe microscope (SPM) (101) of this embodiment.

[0014] The scanning probe microscope (101) shown in FIG. 1 is controlled by a control unit (127) for overall operation, and a laser light (103) emitted from a laser diode (106) is irradiated onto the back surface of a cantilever (108) via a laser side mirror (105), and a probe (114) attached to the tip of the surface of the cantilever (108) is brought close to the surface of a sample (109) placed on a sample stand (110) by driving a sample scanner Z piezo (111). The laser diode (106) is driven by a laser control circuit (120) to emit laser light (103). Due to the force acting between the probe (114) and the sample (109), the cantilever (108) bends, and the incident position of the laser light (103) incident on the photodetector (102) via the detector side mirror (104) changes. The change in the incident position is amplified by the signal amplification circuit (123), and the sample scanner Z piezo (111) is extended in the Z direction (up and down direction) by the Z feedback circuit (124) so ​​that the force acting between the probe (114) and the sample (109) is always maintained as a minute force, and the applied voltage of the sample scanner Z piezo (111) is converted into height information by the signal processing unit (125). The height information is stored in the memory unit (126).

[0015] Additionally, the sample (109) is scanned in the X direction (left-right direction) and the Y direction (front-back direction) by the sample scanner X piezo (112) and sample scanner Y piezo (113), which are driven by the XY piezo driving circuit (122), and is converted into three-dimensional information by the signal processing unit (125) along with the applied voltage of the sample scanner Z piezo (111). The three-dimensional information is displayed on the monitor display unit (128) as an image of the measurement field of view measured using the scanning probe microscope (101). In addition, for the purpose of suppressing wear on the tip of the probe (114), an alternating current signal is applied to the bimorph piezo (107) from the bimorph piezo driving circuit (121) to scan the sample (109) while vibrating the cantilever (108).

[0016] Additionally, there may be a coarse movement mechanism that allows either the cantilever (108) or the sample stand (110) to be moved manually or electrically so as to change the relative position of the probe (114) and the sample (109), and the relative position is adjusted using an optical microscope (115) positioned directly above the cantilever (108).

[0017] FIG. 2 shows a configuration diagram of a probe scanning type scanning probe microscope (201) of the present embodiment. Unlike the sample scanning type scanning probe microscope (101), the probe scanning type scanning probe microscope (hereinafter abbreviated as SPM) (201) has a probe scanning Z piezo (211), a probe scanning X piezo (212), and a probe scanning Y piezo (213) attached to the cantilever (108) side, and acquires data by scanning a probe (114). Other configurations and functions of the probe scanning type scanning probe microscope (201) are identical to those of the sample scanning type scanning probe microscope (101), and redundant descriptions are omitted.

[0018] In this case, a method is used to simultaneously scan all or part of the laser diode (106), laser side mirror (105), detector side mirror (104), and photodetector (102), and to synchronize the laser light (103) with the scanning operation of the cantilever (108). Additionally, the sample stage (214) can be driven manually or by the sample stage driving circuit (215).

[0019] (Flowchart)

[0020] FIG. 3 is a flowchart illustrating the procedure for observing or processing the same location from the scanning probe microscope shown in FIG. 1 and FIG. 2 to the magnified observation processing device, or both. A method for carrying out the present invention will be described with reference to the flowchart of FIG. 3.

[0021] This flowchart is initiated by Step 301. In Step 302, a measurement of the region of interest is performed using a scanning probe microscope (101, or 102). Next, in Step 303, a determination is made as to whether to replace the measurement probe, which has an observation probe of the scanning probe microscope, with a marking probe, which has a marking probe. If, in Step 303, the measurement probe is replaced (Yes), the process proceeds to Step 304. If, in Step 303, the measurement probe is used in combination with the marking probe, that is, if the measurement probe is used as a marking probe (No), the process proceeds to Step 306.

[0022] When performing marking, there are cases where the probe is replaced with a marking probe in order to perform marking with high visibility. At that time, since the probe position may be misaligned after the probe replacement, the misalignment of the probe position is corrected by comparing the optical microscope image or the scanned sample surface data as shown in Step 305. That is, the scanning probe microscope (101, or 102) has means for correcting the misalignment of the observation probe of the measurement probe and the marking probe of the marking probe when the measurement probe is replaced with a marking probe.

[0023] Next, using FIG. 9, a method for correcting positional misalignment is explained. FIG. 9 is a diagram illustrating the correction of positional misalignment before and after the exchange of a marking probe. FIG. 9 shows an example of correction of positional misalignment using an optical microscope image. FIG. 9 (a), (b), and (c) all show optical microscope images of an optical microscope (115) placed directly above the cantilever (108) of a scanning probe microscope (101, or 102). FIG. 9 (a) shows an optical microscope image immediately after measuring a region of interest using a measuring probe (902). FIG. 9 (b) shows an optical microscope image immediately after exchanging to a marking probe (903). FIG. 9 (c) shows an optical microscope image when the measuring probe probe position (901) and the marking probe probe position (904) are aligned.

[0024] First, as shown in FIG. 9 (a), immediately after measuring the region of interest using the measuring probe (902), the measuring probe position (901) is clicked on the optical microscope image with a pointing device such as a mouse, and the measuring probe position (901) is stored in the memory unit (126). Next, as shown in FIG. 9 (b), immediately after replacing with the marking probe (903), the marking probe position (904) is clicked on the optical microscope image with a pointing device, and the marking probe position misalignment distance (905), which is the distance between the measuring probe position (901) and the marking probe position (904), is measured. Finally, the relative position of the marking probe (903) and the sample (109) is moved to correct this distance (905), that is, so that the measurement probe probe position (901) and the marking probe probe position (904) coincide and this distance (905) becomes nearly zero. In this method, the marking probe (903) side and the sample (109) side are moved, and in FIG. 9 (c), the marking probe (903) side is shown being moved in the direction of the left diagonal downward as indicated by the arrow so that the probe position (904) on the marking probe (903) side overlaps with the recorded measurement probe probe position (901). Here, 906 represents the marking probe after position misalignment correction.

[0025] Next, in step 306 of FIG. 3, a scanning probe microscope (101, or 102) is used to mark around the region of interest. An example of marker placement is shown in FIG. 7. FIG. 7 is a diagram illustrating an example of marker placement by a scanning probe microscope (SPM) according to an embodiment. Each marker shown in FIG. 7 is provided for the purpose of easily identifying the location of the region of interest while maintaining the state of wide-area observation of the magnifying observation processing device, in order to suppress the deterioration of the region of interest caused by narrow-area observation of the magnifying observation processing device. Below, examples of placement of each marker shown in FIG. 7 (a) to (j) will be described. Here, the region of interest corresponds to the outer edge of the area of ​​the observation field (703) during the marking search of the magnifying observation processing device.

[0026] As shown in FIG. 7(i), a marker (705) is created to indicate at least a portion of the outer edge of the area of ​​the observation field (703) during the marking search of a pre-specified magnifying observation processing device, so that the area of ​​interest (702) is positioned at the center of the magnification / reduction when the area of ​​interest (702) is observed in the magnifying observation processing device. At this time, in FIG. 7(i), the aspect ratio of the observation field (703) of the magnifying observation processing device is assumed to be 4:3. Additionally, a single quotation mark (L-shaped) marker (705) is created to indicate at least one corner of a rectangle that is a rectangle that matches or is similar to the observation field (703) during the marker search of the magnifying observation processing device. As with this single quotation mark-shaped marker (705), when the center of the area of ​​interest (702) is set as the center of rotation, by placing the marker at a position that is not rotationally symmetric (a non-rotational target position), the angle between the area of ​​interest (702) and the observation field of view (703) of the magnification observation processing device can be aligned.

[0027] Even if the viewing field (703) for marker search of the magnified observation processing device is not predetermined, to specify the size of the viewing field (703), the arrangement of (g) (where cross markers (701) are placed at two points on the left side corner of the short side) and (h) (where cross markers (701) are placed at two points on the lower side corner of the long side) of FIG. 7, as shown by the cross markers (701) representing two corners, the arrangement of (l) of FIG. 7 using a short side marker (709) representing one side of the left side of the viewing field (703) for marking search of the magnified observation processing device, the arrangement of (k) of FIG. 7 using a long side marker (710) representing one side of the lower side, and the arrangement of (j) of FIG. 7 using a short side long side integrated marker (711) representing both the left side short side and the lower side long side are also effective. In addition, the three corners of the observation field (703) during marker search of the magnified observation processing device may be represented by cross-shaped markers (701) as in FIG. 7 (a), by cross-shaped (X-shaped) markers (704) as in FIG. 7 (b), or by single-angle markers (705) as in FIG. 7 (c).

[0028] In addition, it is desirable to allow the arrangement of markings to be arbitrarily set according to the aspect ratio of the observation field of the magnified observation processing device, such as the arrangement of (d) in FIG. 7 when the magnified observation processing device has an observation field (706) with a 1:1 aspect ratio, the arrangement of (e) in FIG. 7 when the magnified observation processing device has an observation field (707) with a 16:9 aspect ratio, and the arrangement of (f) in FIG. 7 when the magnified observation processing device has an observation field (708) with a 3:4 aspect ratio.

[0029] Here, the scanning probe microscope (101, 102) can be summarized as follows. The scanning probe microscope (101, 102) has a scanning section (e.g., 111 to 113, 211 to 213, etc.) for scanning the sample (109) and the probe (114) relative to each other, and observes the sample (109) by scanning the sample (109) and the probe (114). The scanning probe microscope (101, 102) is equipped with a control section (127). The control unit (127) is a magnifying observation and processing device for further observing or processing or both, after acquiring the region of interest (702) obtained as a result of scanning, and is based on information regarding the magnifying observation and processing device separate from the scanning probe microscope (101, 102) (e.g., field size of the observation field (703), field aspect ratio, field magnification, observation angle, etc.), wherein the area to be observed or processed by the magnifying observation and processing device (area of ​​the observation field (703)) is an area containing the region of interest (702), and furthermore, the region of interest (702) is located at the center of the magnification and reduction when the area (area of ​​the observation field (703)) is observed by the magnifying observation and processing device, and by interacting the probe (114) with the sample (109), the outer edge of the area to be observed or processed (observation field (703)) (e.g., Control is performed to form a marker representing at least a part of the edge, short side, long side, etc.

[0030] Since the purpose is to suppress the deterioration of the region of interest caused by narrow-area observation of the magnifying observation processing device and to easily determine the location of the region of interest while maintaining the state of wide-area observation of the magnifying observation processing device, high visibility of the marker itself within the magnifying observation processing device is also important. FIG. 8 is a diagram illustrating an example of the shape of a marker formed by a scanning probe microscope according to an embodiment. FIG. 8 describes an example of the shape of a cross-shaped (X-shaped) marker (704) as a representative example, but it is applicable to the shapes of other markers (701, 705, 709, 710, 711). An example of a marker shape is described using FIG. 8 (a) to (i).

[0031] FIG. 8(a) shows a single-line marker (single-line scratch mark) (801) formed on a sample (109) by a scratch mark of the probe (114) of a scanning probe microscope (101, or 102). If the visibility of the single-line marker (801) shown in FIG. 8(a) is insufficient, it is also possible to increase the visibility of the marker by forming a multi-line scratch mark by increasing the number of lines, such as a four-line marker (802) as shown in FIG. 8(b), and an eight-line marker (803) as shown in FIG. 8(c). FIG. 8(d) shows a weak contact pressure marker (811) when a scratch mark of the probe (114) of a scanning probe microscope (101, or 102) is applied to the sample (109) with weak pressure. In the case of the weak pressure marker (811) as shown in FIG. 8 (d), the line itself is thin, and even if there are many of them, there may be cases where the visibility is insufficient. In such cases, the scanning speed of the probe (114) on the sample (109) can be adjusted, or a strong pressure marker (812) can be set by the scratch mark when the amount of indentation of the probe (114) on the sample (109) is increased as shown in FIG. 8 (e). Additionally, as shown in FIG. 8 (f), to make the scratch mark deeper or thicker, the probe (114) makes scratches at the same location multiple times to form a deep scratch mark, such as a multiple overlapping marker (813), and an arbitrary number of overlapping times (e.g., 3 times) can be set. In addition, as shown in FIG. 8 (g), a rice-shaped (asterisk-shaped) marker (821) with an increased number of scratches can also be set. Furthermore, regarding the size of the marker itself, it can be set to any size depending on the situation, such as the small-size marker (831) shown in FIG. 8 (h) or the large-size marker (832) shown in FIG. 8 (i).

[0032] When the scanner (111-113, or 211-213) of the scanning probe microscope (101, or 102) is composed of a piezoelectric element, there may be a deformation of the marker shape due to the characteristics of the piezoelectric element. In such cases, when marking is performed by the probe (114), it is preferable to scan the probe (114) multiple times by the scanner (111-113, or 211-213) under conditions such that the probe (114) is not marked in the air or on the sample (109) (conditions such that a marker is not formed on the sample (109) by the probe (114), and after performing multiple scans of the probe (114), to perform a predetermined marking on the sample (109) by the probe (114). By doing so, the deformation of the marker shape can be reduced. In addition, it is also possible to set the marker shape to reduce deformation in this way.

[0033] Next, a marking setting screen is described using FIG. 10. FIG. 10 is a diagram showing a configuration example 1 of a marking setting screen provided in a scanning probe microscope (SPM) according to an embodiment. FIG. 10 describes a case where markers are formed at three corners of the observation field (703) as a representative example (e.g., see FIG. 7 (a)), but it is applicable to other arrangement examples ( FIG. 7 (g), (h), (i), (l), (k), (j)).

[0034] After the user uses the SPM (101, or 102) to specify an area of ​​interest and acquires an observation image, a marking setting screen (1001) is displayed on the monitor display (128). The marking setting screen (1001) has a scanner operating range display (1002) and a marking condition display (1003) of the SPM. The observation field of view (1022) and the area of ​​interest (1024) of the SPM are displayed within the scanner operating range display (1002), and the scanner coordinates of the area of ​​interest (1024) are displayed at the area of ​​interest location (1012).

[0035] The user selects the type of magnification observation processing device within the marking condition display unit (1003). In this example, as a magnification observation processing device, one device is selected from three devices: a first scanning electron microscope (SEM1), a second scanning electron microscope (SEM2), and a focused ion beam device (FIB1). FIG. 10 shows the state in which the first scanning electron microscope (SEM1) is selected (black circle ● mark). Although not particularly limited, the first scanning electron microscope (SEM1) may be a device with a magnification of the observation field of view that is the same, higher, or lower compared to the second scanning electron microscope (SEM2).

[0036] When a type of magnified observation processing device is selected, the user registers the observation field setting button (1004) in advance, or reads the observation field (703) and the aspect ratio of the observation field (703) when the magnified observation processing device (here, the selected first scanning electron microscope (SEM1)) acquired by communication searches for a marker, and determines a marking position (condition for the placement position of the marker) that matches the field size of the observation field (703) as shown in FIG. 7 (a) to FIG. 7 (j). The user can specify a marker shape as shown in FIG. 8 (g) to FIG. 8 (i) by selecting or numerically entering the spacing for placing the marker from the marker spacing list box (1007), selecting or numerically entering the marker shape from the marker shape list box (1005), and selecting or numerically entering the size of the marker from the marker size list box (1006). When these conditions are set within the marking condition display unit (1003), the marking location (1021) based on the specified marking conditions and the observation field (1023) of the first scanning electron microscope (SEM1), which is a magnified observation processing device, are displayed within the scanner operating range display unit (1002), for example, as a dotted rectangle. After checking the scanner operating range display unit (1002), the user clicks the marking start button to start marking. If the setting save button is clicked, the marking conditions set in the marking condition display unit (1003) or the display image of the scanner operating range display unit (1002) can be saved, for example, in the memory unit (126). If the end button is clicked, the display of the marking setting screen (1001) ends.

[0037] Additionally, before initiating marking, each of the conditions described below may be set within the marking condition display unit (1003). The user may select or input a number of marker lines from the marker number list box (1008) and specify the number of marker lines as shown in FIG. 8 (a) to FIG. 8 (c). Additionally, the user may select or input a numerical value for the indentation amount of the cantilever (108) (or probe (114)) during marker drawing from the drawing indentation amount list box (1009), select or input a numerical value for the marker drawing speed (movement speed of the cantilever (108) (or probe (114))) from the drawing speed list box (1010), select or input a numerical value for the number of times the marker is overwritten from the number of times the marker is overwritten from the overwriting count list box (1011), and set conditions for optimizing the visibility of the marker in the magnified observation processing device as shown in FIG. 8 (d) to FIG. 8 (f). By doing so, the visibility of the marker can be optimized, and thus the visibility of the marker can be improved. Additionally, although an example configuration has been shown in which list boxes (1005 to 1011) for setting conditions for forming the marker are provided in the marking condition display unit (1003), it is not limited thereto. In the marking condition display unit (1003), marker formation conditions that can improve the visibility of the marker can be input or set.

[0038] Next, using FIG. 4, an example configuration of a sample observation processing system is described. FIG. 4 is a diagram illustrating Example 1 configuration of a sample observation processing system according to an embodiment. The sample observation processing system (400) includes a scanning probe microscope (SPM) and a magnification observation processing device of FIG. 1 or FIG. 2. FIG. 4 shows a sample observation processing system (400) in which the magnification observation processing device is a scanning electron microscope (SEM).

[0039] FIG. 4(a) shows the measurement field of view (406) of an SPM immediately after forming three markers (404) around a region of interest (405) measured on the surface of a sample (402) installed on a sample stand (403) using a marking probe (401) of a scanning probe microscope (SPM) (step 306 of FIG. 3).

[0040] In step 307 of FIG. 3, a sample installed in a scanning probe microscope (SPM) is moved to an observation position of a magnified observation processing device, and the state immediately thereafter is shown in FIG. 4 (b). Incident electrons irradiated from the column (411) of the scanning electron microscope (SEM) are irradiated onto a sample (413) fixed on the sample stage (412) of the SEM, and secondary electrons or reflected electrons generated near the irradiation area are detected by the detector (414) of the SEM and processed by the signal processing unit (415) of the SEM, and the observation field (416) of the SEM is displayed on the monitor.

[0041] Next, in step 308 of FIG. 3, the field of view position and angle of the scanning electron microscope (SEM) are adjusted to match the marker, and the appearance after adjustment is shown in FIG. 4 (c). By driving the sample stage (412) of the SEM or adjusting the scanning angle, the marker (404) is positioned in the field of view as shown in the observation field of view (417) of the SEM after the field of view position and angle adjustment.

[0042] Next, in step 309 of FIG. 3, the field of view of the scanning electron microscope (SEM) is increased to enlarge the field of view (418), and the field of view (418) of the SEM after enlargement in FIG. 4 (d) can be displayed with a size equal to the measurement field of view (406) of the scanning probe microscope (SPM).

[0043] Afterwards, in Step 310 of FIG. 3, observation or processing of the region of interest (405), or both, is performed. If another region of interest exists (in the case of Yes in Step 311 of FIG. 3), the field of view of the scanning electron microscope (SEM) may be moved to the location of a marker provided around the next region of interest, as shown in Step 311 of FIG. 3, and the observation of the next region of interest may be repeated. When the observation of all regions of interest is finished (in the case of No in Step 311 of FIG. 3), the process proceeds to Step 312 of FIG. 3, and the flowchart of FIG. 3 ends.

[0044] Next, another configuration example of a sample observation and processing system is described using FIG. 5. FIG. 5 is a diagram illustrating Configuration Example 2 of a sample observation and processing system according to an embodiment. The sample observation and processing system (500) includes a scanning probe microscope (SPM) and a magnification observation and processing device of FIG. 1 or FIG. 2. FIG. 5 shows a sample observation and processing system (500) in which the magnification observation and processing device is a scanning electron microscope / focused ion beam combined scanner (FIB-SEM). FIG. 5 shows a case where a sample is moved from a scanning probe microscope (SPM) to a scanning electron microscope / focused ion beam combined scanner (FIB-SEM) and observation or processing, or both, of the same location in the region of interest is performed.

[0045] As shown in FIG. 5(a), a region of interest (405) in a scanning probe microscope (SPM) is identified, and three markers (404) are formed around the region of interest (405). After the three markers (404) are formed, as shown in FIG. 5(b), a sample (513) with the three markers (404) formed is placed on the sample stage (512) of the FIB-SEM. Incident electrons irradiated from the column (511) of the scanning electron microscope (SEM) are irradiated onto the sample (513) fixed on the sample stage (512) of the FIB-SEM, and secondary electrons or reflected electrons generated near the irradiation area are detected by the detector (514) of the FIB-SEM and processed by the signal processing unit (515) of the FIB-SEM, and the observation field (516) of the FIB-SEM is displayed on the monitor.

[0046] Next, the appearance after adjusting the viewing position and angle to match the marker is shown in FIG. 5(c). By driving the sample stage (512) of the FIB-SEM or adjusting the scanning angle, the marker (405) is positioned in the viewing angle, as shown in the FIB-SEM observation field (518) after adjusting the viewing position and angle. Next, the FIB-SEM observation field (518) can be enlarged to display the same size as the SPM measurement field (406), as shown in FIG. 5(d) after enlargement of the FIB-SEM observation field (519). After that, the region of interest (405) can be observed, processed, or both can be performed by the ion beam irradiated from the column (517) of the focused ion beam device (FIB).

[0047] Next, another configuration example of a sample observation processing system is described using FIG. 6. FIG. 6 is a diagram illustrating Configuration Example 3 of a sample observation processing system according to an embodiment. The sample observation processing system (600) includes a scanning probe microscope and a magnification processing device. FIG. 6 shows a sample observation processing system (600) in which the scanning probe microscope becomes a scanning probe microscope / scanning electron microscope (SPM-SEM) combination device and the magnification processing device becomes a scanning electron microscope / focused ion beam (FIB-SEM) combination device.

[0048] FIG. 6 illustrates a case where a sample is transferred from a scanning probe microscope / scanning electron microscope (SPM-SEM) complex, in which one or more scanning probe microscopes are installed within a charged particle beam device (in this example, a scanning electron microscope), to a scanning electron microscope / focused ion beam (FIB-SEM) complex, and the same location in the region of interest is observed, processed, or both. In the sample chamber of the scanning probe microscope / scanning electron microscope (SPM-SEM) complex, one or more conductive probes (607) and a marking probe (603) for the scanning probe microscope (SPM) are arranged around the sample (402). The conductive probes (607) are installed for the purpose of electrical measurement. The scanning probe microscope / scanning electron microscope (SPM-SEM) combination device has the function of scanning a sample (402) using these probes (607, 603), evaluating the electrical characteristics of a micro semiconductor device formed on the sample (402) using an ammeter (608) or a constant voltage source (609) while fixed at a specific position, or forming a marker (404) around a region of interest (405). That is, the scanning probe microscope / scanning electron microscope (SPM-SEM) combination device includes a micro semiconductor device characteristic evaluation device.

[0049] Figure 6(a) shows a configuration diagram of an SPM-SEM combined machine. Incident electrons irradiated from the column (602) of the scanning electron microscope (SEM) of the SPM-SEM combined machine are irradiated onto a sample (402) fixed on the sample stage (604) of the SPM-SEM combined machine, and secondary electrons or reflected electrons generated near the irradiation unit are detected by the detector (605) of the SPM-SEM combined machine and processed by the signal processing unit (606) of the SPM-SEM combined machine, so that the observation field (601) of the SPM-SEM combined machine is displayed on the monitor. In the observation field (601) of the SPM-SEM combined machine, the location of the region of interest (405) or the marker (404), and the movement or fixed position of the conductive probe (607) or the marking probe (603) are displayed. A marker (404) is formed around a specific region of interest (405) of a sample (402) using a marking probe (603) installed inside an SPM-SEM complex, and then the sample (402) with the marker (404) formed is moved to a sample stage (512) of an FIB-SEM complex to perform observation or processing of the region of interest (405), or both. Since FIGS. 6 (b), (c), and (d) are identical to FIGS. 5 (b), (c), and (d), redundant descriptions are omitted. As shown in FIGS. 6, it is also possible to construct a sample observation and processing system (600).

[0050] Further details regarding the scanning probe microscope / scanning electron microscope (SPM-SEM) combination device are provided. As previously described, the scanning probe microscope / scanning electron microscope (SPM-SEM) combination device incorporates the function of an electrical characteristic evaluation device for evaluating the electrical characteristics of a sample (402). The conductive probe (607) can be described as a conductive probe. Additionally, the scanning probe microscope / scanning electron microscope (SPM-SEM) combination device is equipped with a driving unit (111-113, or 211-213) that changes the relative positional relationship between the sample (402) and the probe (607) as described in FIGS. 1 and 2, an electrical characteristic evaluation unit (608, 609) connected to the probe (607) and evaluating the electrical characteristics of the sample (402), and a charged particle beam irradiation unit (602) that irradiates a charged particle beam toward the sample (402).

[0051] A scanning probe microscope / scanning electron microscope (SPM-SEM) combined device evaluates the electrical characteristics of a sample (402) by irradiating a charged particle beam onto the sample (402) while contacting a probe (607) with the sample (402). Alternatively, the probe (607) of the scanning probe microscope / scanning electron microscope (SPM-SEM) combined device can contact the sample (402) within the field of view of the charged particle beam irradiation unit (602), and evaluates the electrical characteristics of the sample (402) by irradiating a charged particle beam onto the sample (402) while contacting the probe (607) with the sample (402). For example, the electrical characteristics of the sample (402) are evaluated by measuring the current or voltage, or both, generated in the semiconductor device or wiring formed on the sample (402) by irradiating a charged particle beam through the probe (607).

[0052] And, the scanning probe microscope / scanning electron microscope (SPM-SEM) combination device identifies a region of interest (405) of the sample (402) based on the results of the evaluation of electrical characteristics. The region of interest (405) may be, for example, a region including a broken part of the wiring, a region including a faulty part of the semiconductor device or wiring, a region including a foreign part on the sample (402), a region satisfying a predetermined condition or a region not satisfying it, etc. The scanning probe microscope / scanning electron microscope (SPM-SEM) combination device identifies an area to be observed or processed that contains the region of interest (405) and also has the region of interest (402) located at the center of the magnification / reduction when the area is observed by a magnification observation processing device (FIB-SEM), and forms a marker (404) indicating at least a part of the outer edge of the area to be observed or processed by interacting the probe (607) with the sample (402).

[0053] Next, using FIG. 11, a modified example of a marking setting screen is described. FIG. 11 is a diagram showing configuration example 2 of a marking setting screen according to an embodiment. FIG. 11 differs from FIG. 10 in that an observation field setting area (1104) is provided in the marking condition display unit (1003) as a substitute for an observation field setting button (1004), a selectable marking location designation unit (1121) for designating a marking location is displayed within the scanner operating range display unit (1002), and the observation field (1123) of the magnified observation processing device set in the observation field setting area (1104) and the marking location designation unit (1121) are superimposed on the image (1110) obtained by the scanning probe microscope (SPM) of FIG. 1 or FIG. 2 and displayed within the scanner operating range display unit (1002). Since other configurations and functions of FIG. 11 are identical to other configurations and functions of FIG. 10, redundant descriptions are omitted.

[0054] First, an example of the configuration of the observation field setting area (1104) will be explained. As shown in FIG. 11, the observation field setting area (1104) is provided with Manual and Template options available for selecting a setting method. FIG. 11 shows the state where Template is selected (black circle ● mark). When Template is selected, the detailed selection area (1105) is displayed. The detailed selection area (1105) is configured to display options regarding the field magnification of the magnification processing device (here, the first scanning electron microscope (SEM1)) selected from the moving observation device. In this example, for the first scanning electron microscope (SEM1), a template item with a magnification of x10k and a template item with a magnification of x5k are shown as representative examples, and the state where the template item with a magnification of x10k is selected (mark レ mark) is shown. When these template items are selected, the observation field (1123) of the first scanning electron microscope (SEM1) corresponding to the aspect ratio of the observation field of the first scanning electron microscope (SEM1) is displayed within the scanner operating range display (1002). In addition, in this example, marking location designation sections (1121) are displayed at the four corners of the observation field (1123). These marking location designation sections (1121) are configured to be selectable. In FIG. 11, as a representative example, the marking location designation sections (1121) at three corners are in a selected state (marked at the corner). By doing so, for example, as shown in FIG. 7 (a), the placement positions of the markers can be specified at the three corners surrounding the region of interest (1024). Settings such as the marker shape are made by setting the list boxes (1005 to 1011) for setting conditions.After setting the template item, selecting the marking location designation part (1121), and setting the list box (1005~1011) for setting conditions, clicking the marking start button can automatically form highly visible markers on three corners around the area of ​​interest (1024).

[0055] The template item is a template item for magnification, but it may also be an aspect ratio of the viewing field. The detailed selection area (1105) can be configured to allow input of the viewing field magnification or viewing field aspect ratio when searching for markers of the magnified viewing processing device.

[0056] In this way, the placement position of the marker can be specified while visually observing and confirming the image (1110) displayed within the scanner operating range display (1002) and the marking location designation part (1121), thereby providing an interface with improved convenience for the user.

[0057] In FIG. 11, the observation field (1124) indicated within the scanner operating range display (1002) is an exemplary view of the observation field of the second scanning electron microscope (SEM2). The image (1110) may be an image obtained by the optical microscope (115) of the scanning probe microscope (SPM) of FIG. 1 or FIG. 2.

[0058] When a manual is selected, it is configured to input predetermined items, such as inputting the field of view magnification of the field of view or inputting the aspect ratio of the field of view. The control unit (127) can perform calculations based on the values ​​input to the predetermined items and display a display similar to that of FIG. 11 on the scanner operating range display unit (1002).

[0059] Additionally, it is possible to rephrase that the marking location designation part (1121) indicates the location where the marker is to be formed, and the observation field (1123) indicates the observation field that will be the observation field of the first scanning electron microscope (SEM1).

[0060] In addition, in FIG. 11, it is also possible to configure the sides between the marking location designation parts (1121) to be selectable. By doing so, the markers of the sides (709, 710, 711) shown in (i), (k), and (j) of FIG. 7 can be formed in a shape that improves visibility.

[0061] Although the invention made by the inventor has been specifically described above based on examples, the invention is not limited to the above embodiments and examples, and it is obvious that various modifications are possible. Explanation of the symbols

[0062] 101: Sample Scanning Probe Microscope (SPM), 102: Photodetector, 103: Laser Light, 104: Detector-side Mirror, 105: Laser-side Mirror, 106: Laser Diode, 107: Bimorphic Piezo, 108: Cantilever, 109: Sample, 110: Sample Stage, 111: Sample Scanner Z Piezo, 112: Sample Scanner X Piezo, 113: Sample Scanner Y Piezo, 114: Probe, 115: Optical Microscope, 120: Laser Control Circuit, 121: Bimorphic Driving Circuit, 122: XY Piezo Driving Circuit, 123: Signal Amplification Circuit, 124: Z Feedback Circuit, 125: Signal Processing Unit, 126: Memory Unit, 127: Control Unit, 128: Monitor display, 201: Scanning Probe Microscope (SPM), 211: Probe Scanner Z Piezo, 212: Probe Scanner X Piezo, 213: Probe Scanner Y Piezo, 214: Sample stage, 215: Sample stage driving circuit, 401: Marking probe, 402: Sample, 403: Sample holder, 404: Marker, 405: Region of interest, 406: Measurement field of view, 411: Column, 412: Sample stage, 413: Sample, 414: Detector, 415: Signal processing unit, 416: Observation field of view, 417: Observation field of view after adjusting field of view position and angle, 418: Observation field of view after magnification, 511: Column, 512: Sample stage, 513: Sample, 514: Detector, 515: Signal processing unit, 516: Observation field, 517: Column, 518: Observation field after alignment, 519: Observation field after magnification, 601: Measurement field, 602: Column, 603: Marking probe, 604: Sample stage, 605: Detector, 606: Signal processing unit, 607: Electrical measurement probe, 608: Ammeter, 609: Constant voltage source, 701: Cross marker, 702: Region of interest, 703: Observation field during marking search, 704: Scissor mark (X-shaped) marker, 705: Single slash mark (L-shaped) marker, 706: Observation field with 1:1 aspect ratio, 707: Observation field with 16:9 aspect ratio, 708:3:4 aspect ratio field of view, 709: short deformation marker, 710: long deformation marker,711: Integrated short / long side marker, 801: 1-groove marker, 802: 4-groove marker, 803: 8-groove marker, 811: Light contact pressure marker, 812: High contact pressure marker, 813: Multiple overlay marker, 821: Rice-shaped (asterisk-shaped) marker, 831: Small size marker, 832: Large size marker, 901: Measurement probe tip position, 902: Measurement probe, 903: Marking probe, 904: Marking probe tip position, 905: Marking probe tip position misalignment distance, 906: Marking probe after position misalignment correction, 1001: Marking setting screen, 1002: Scanner operating range display, 1003: Marking condition display, 1004: Observation field of view setting button, 1005: Marker shape list box, 1005: Marker shape list box, 1006: Marker size list box, 1007: Marker spacing list box, 1008: Marker count list box, 1009: Drawing indentation amount list box, 1010: Drawing speed list box, 1011: Overwriting count list box, 1012: Area of ​​interest location display section, 1021: Marking location, 1022: Observation field, 1023: Observation field, 1024: Area of ​​interest, 1110: SPM observation image display section, 1104: Observation field setting area, 1105: Detailed selection area, 1121: Marking location designation section, 1123: Observation field, 1124: Observation field,

Claims

Claim 1 A scanning probe microscope having a scanning unit for scanning a sample and a probe relative to each other, and observing the sample by scanning the sample and the probe, comprising a control unit, wherein the control unit, after acquiring a region of interest obtained as a result of the scanning, further performs observation or processing or both, and, based on information regarding the magnifying observation processing device separate from the scanning probe microscope, specifies an observation or processing area in which the area observed or processed by the magnifying observation processing device contains the region of interest, and further specifies an observation or processing area in which the region of interest is located at the center of the magnification / reduction when the area is observed by the magnifying observation processing device, and performs control to form a marker indicating at least a part of the outer edge of the observation or processing area by interacting the probe and the sample, wherein when the marker is composed of a line, one or more conditions such as the direction of the marker line, the length of the marker line, the thickness of the marker line, the number of times the marker line is overlaid, the depth or height of the marker line, and the drawing speed of the marker line can be changed. Scanning probe microscope. Claim 2 A scanning probe microscope having a scanning unit for scanning a sample and a probe relative to each other, and observing the sample by scanning the sample and the probe, comprising a control unit, wherein the control unit, after acquiring a region of interest obtained as a result of the scanning, further performs observation or processing or both, and, based on information regarding the magnifying observation processing device separate from the scanning probe microscope, specifies an observation or processing area in which the area observed or processed by the magnifying observation processing device contains the region of interest, and further specifies an observation or processing area in which the region of interest is located at the center of the magnification / reduction when the area is observed by the magnifying observation processing device, and performs control to form a marker indicating at least a part of the outer edge of the observation or processing area by interacting the probe and the sample, wherein the scanning unit is composed of a piezoelectric element, and when forming the marker, a predetermined marker is formed after performing multiple scans in the air or under conditions such that the marker is not formed on the sample by the probe. Claim 3 A scanning probe microscope having a scanning unit for scanning a sample and a probe relative to each other, and observing the sample by scanning the sample and the probe, comprising a control unit, wherein the control unit, after acquiring a region of interest obtained as a result of the scanning, further performs observation or processing or both, and, based on information regarding the magnifying observation processing device separate from the scanning probe microscope, specifies an area to be observed or processed by the magnifying observation processing device such that the area to be observed or processed by the magnifying observation processing device contains the region of interest, and further specifies an area to be observed or processed such that the region of interest is located at the center of the magnification / reduction when the area is observed by the magnifying observation processing device, and performs control to form a marker indicating at least a part of the outer edge of the area to be observed or processed by interacting the probe and the sample, and comprises a monitor display unit, wherein the monitor display unit displays a marking setting screen including a scanner operating range display unit and a marking condition display unit, wherein the marking setting screen is configured to allow input of a field of view magnification or field of view aspect ratio when searching for a marker by the magnifying observation processing device, and the field of view A scanning probe microscope in which, based on the magnification or the field of view aspect ratio being input into the marking condition display unit, the scanner operating range display unit displays a rectangle that matches or corresponds to the field of view size when the magnified observation processing device searches for the marker, and also displays a selectable marking location designation unit at the corner of the rectangle, and the marker is formed on the sample based on the selection state of the marking location designation unit. Claim 4 A sample observation and processing system comprising a scanning probe microscope described in claim 1 and a magnifying observation and processing device for further observing or processing or both of the sample having a specified region of interest, wherein the sample observation and processing system uses a marker generated by the scanning probe microscope to align the angle between the region of interest of the scanning probe microscope and the region to be observed or processed by the magnifying observation and processing device with one or more corners of the field of view of the magnifying observation and processing device, and then increases the magnification of the magnifying observation and processing device to perform observation or processing or both of the region of interest. Claim 5 A scanning probe microscope capable of changing one or more conditions of the direction of the marker line, the length of the marker line, the thickness of the marker line, the number of times the marker line is overlaid, the depth or height of the marker line, and the drawing speed of the marker line, in accordance with claim 2 or 3, when the marker is composed of a line. Claim 6 A sample observation and processing system comprising a scanning probe microscope described in paragraph 2 or 3 and a magnifying observation and processing device for further observing or processing or both of the sample having a specified region of interest, wherein the sample observation and processing system uses the marker generated by the scanning probe microscope to align the angle between the region of interest of the scanning probe microscope and the region to be observed or processed by the magnifying observation and processing device with one or more corners of the field of view of the magnifying observation and processing device, and then increases the magnification of the magnifying observation and processing device to perform observation or processing or both of the region of interest. Claim 7 An electrical characteristic evaluation device for evaluating the electrical characteristics of a sample, comprising a conductive probe, a driving unit for changing the relative positional relationship between the sample and the probe, an electrical characteristic evaluation unit connected to the probe and evaluating the electrical characteristics of the sample, and a charged particle beam irradiation unit for irradiating a charged particle beam toward the sample, evaluating the electrical characteristics of the sample by irradiating the charged particle beam toward the sample while contacting the probe with the sample, specifying a region of interest based on the result of the evaluation, specifying an area to be observed or processed which is a region containing the region of interest and also has the region of interest located at the center of the magnification / reduction when the region is observed by a magnification / observation / processing device, and forming a marker indicating at least a part of the outer edge of the area to be observed or processed by interacting the probe and the sample. Claim 8 An electrical characteristic evaluation device for evaluating the electrical characteristics of a sample, comprising: a conductive probe; a driving unit for changing the relative positional relationship between the sample and the probe; an electrical characteristic evaluation unit connected to the probe and evaluating the electrical characteristics of the sample; and a charged particle beam irradiation unit for irradiating a charged particle beam toward the sample; wherein the probe is capable of contacting the sample within the field of view of the charged particle beam irradiation unit, and the electrical characteristics of the sample are evaluated by irradiating the charged particle beam toward the sample while contacting the probe with the sample, and a region of interest is specified based on the result of the evaluation, and a region to be observed or processed is specified, which is a region containing the region of interest and also has the region of interest located at the center of the magnification / reduction when the region is observed by a magnification / observation / processing device, and a marker is formed indicating at least a part of the outer edge of the region to be observed or processed by interacting the probe and the sample. Claim 9 A sample observation and processing system comprising an electrical characteristic evaluation device described in claim 7 or 8, and an enlarged observation and processing device for observing or processing, or both, the region of interest of the sample whose electrical characteristics are evaluated by the electrical characteristic evaluation device. Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 delete

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