Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of improving the thickness and doping uniformity of a film on a substrate by reducing temperature variations in the substrate, thereby enabling temperature correction in areas where temperature variations occur, by heating the substrate not only at the bottom but also at the top when depositing a silicon carbide (SiC) film or the like on a substrate, and further heating the processing space in which the substrate is placed.

Description

Technology Field

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of improving the thickness and doping uniformity of a film on a substrate by reducing temperature variations in the substrate, thereby enabling temperature correction in areas where temperature variations occur, by heating the substrate not only at the bottom but also at the top when depositing a silicon carbide (SiC) film or the like on a substrate, and further heating the processing space in which the substrate is placed. Background Technology

[0002] Recently, demand for SiC power devices has surged, and the related market is expected to continue rising.

[0003] Such SiC power semiconductor devices can be fabricated by placing a substrate in a reaction chamber and growing a silicon carbide (SiC) single crystal on a substrate placed on a susceptor by supplying a mixture of process gas and carrier gas into the reaction chamber and thermally decomposing it.

[0004] In the case of chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted in which a heater is provided only at the bottom of the substrate. In this case, it takes a long time to heat the substrate to the required process temperature, and it is also difficult to precisely control the process temperature.

[0005] Accordingly, there was a need to develop a chemical vapor deposition apparatus capable of reducing the time required to heat the substrate to the process temperature and, furthermore, enabling temperature correction in areas where temperature deviations occur, thereby reducing the temperature variation of the substrate. The problem to be solved

[0006] The present invention aims to provide a chemical vapor deposition apparatus capable of temperature correction in areas where temperature deviations occur on a substrate by placing heaters not only on the bottom but also on the top of the substrate to solve the above-mentioned problems. means of solving the problem

[0007] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber, a susceptor provided inside the chamber on which a substrate is placed, a lower heater provided below the susceptor to heat the susceptor, and an upper heater provided above the susceptor.

[0008] Here, the lower heater and the upper heater may have different heating methods. For example, the lower heater may be composed of an induction heater, and the upper heater may be composed of a resistance heater.

[0009] In addition, a power supply unit that supplies power to the resistance heating heater is further provided, and a noise filter may be connected to the power supply unit.

[0010] Meanwhile, a lower plate is provided between the susceptor and the lower heater and on which the susceptor is positioned, and an upper plate is provided between the susceptor and the upper heater, and the space between the lower plate and the upper plate can form a processing space where the substrate is processed.

[0011] Furthermore, a gas supply unit that supplies process gas to the processing space from one side of the processing space may be further provided.

[0012] In addition, the upper heater may be composed of multiple zone heaters capable of individual temperature control. In this case, the multiple zone heaters may be arranged along the flow direction of the process gas.

[0013] Meanwhile, a heat-blocking member may be further provided inside the chamber to surround the susceptor, the upper heater, and the lower heater.

[0014] In this case, the heat-insulating member may be composed of carbon felt or graphite felt.

[0015] Meanwhile, the objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber, an inner chamber provided inside the chamber, a susceptor provided inside the inner chamber on which a substrate is placed, a lower heater provided below the susceptor to heat the susceptor, and an upper heater provided above the susceptor.

[0016] Here, the lower heater may be composed of an induction heater, and the upper heater may be composed of a resistance heater.

[0017] In addition, the upper heater may be composed of multiple zone heaters that can be individually temperature controlled.

[0018] Meanwhile, a lower plate is provided between the susceptor and the lower heater and on which the susceptor is positioned, and an upper plate is provided between the susceptor and the upper heater, and the space between the lower plate and the upper plate can form a processing space where the substrate is processed.

[0019] In addition, the inner chamber may be composed of carbon felt or graphite felt. Effects of the invention

[0020] According to the present invention having the above-described configuration, by placing heaters not only on the bottom but also on the top of the substrate, it is possible to correct the temperature in the region where a temperature deviation of the substrate occurs, thereby reducing the temperature deviation of the substrate and improving the thickness and doping uniformity of the film on the substrate. Brief explanation of the drawing

[0021] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention, FIG. 2 is a partial perspective view illustrating an upper heater and a lower heater, FIG. 3 is an enlarged view of the upper heater, lower heater, upper plate, and lower plate. FIG. 4 is a graph showing the temperature of the upper plate in the configuration according to FIG. 1 and FIG. 2. FIG. 5 is a side view illustrating another embodiment of the upper heater, FIG. 6 is a side view illustrating another embodiment of the upper heater, FIG. 7 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to another embodiment of the present invention. Specific details for implementing the invention

[0022] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0023] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0024] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may comprise a chamber (100), a susceptor (324) provided inside the chamber (100) on which a substrate (W) is placed, a lower heater (340) provided below the susceptor (324) to heat the susceptor (324), and an upper heater (330) provided above the susceptor (324).

[0025] A receiving space (110) is provided inside the chamber (100), and various components may be provided.

[0026] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may supply various process gases and purge gases toward the processing space (312).

[0027] Here, a lower plate (320) on which a susceptor (324) is disposed to be placed between the susceptor (324) and the lower heater (340) and on which the substrate (W) is placed, and an upper plate (310) between the susceptor (324) and the upper heater (330) are provided, and the processing space (312) can be defined as the space between the lower plate (320) and the upper plate (310).

[0028] Meanwhile, the gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) for supplying gas may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0029] The chemical vapor deposition apparatus (1000) according to the present invention is an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and can grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W) by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312).

[0030] Meanwhile, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature corresponds to a high temperature of approximately 1600 degrees or higher. Therefore, the upper plate (310) and lower plate (320) that partition the processing space (312) can use graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material produced by CVD sintering to increase thermal stability and thermal conductivity, thereby efficiently heating the substrate and reducing power consumption.

[0031] In this case, the lower plate (320) may be provided with a susceptor (324) on which the substrate (W) is placed.

[0032] For example, a concave portion (322) may be formed in the lower plate (320), and the susceptor (324) may be inserted and placed in the concave portion (322).

[0033] Meanwhile, the susceptor (324) may be rotatably provided on the lower plate (320). That is, the susceptor (324) may be rotated by providing a nozzle (not shown) in the concave portion (322) to supply floating gas, etc. toward the lower surface of the susceptor (324). During the process on the substrate (W), the substrate (W) may be rotated by the rotation of the susceptor (324) so ​​that the process gas, etc. supplied from the side may react uniformly across the entire surface of the substrate (W).

[0034] A gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the processing space (312). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0035] Meanwhile, the chemical vapor deposition apparatus (1000) may be equipped with an upper heater (330) and a lower heater (340) for heating the substrate (W) and the processing space (312) to a process temperature.

[0036] The lower heater (340) may be provided at the bottom of the lower plate (320), and the upper heater (330) may be provided at the top of the upper plate (310).

[0037] In the case of a chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted in which a heater is provided only at the bottom of the lower plate (320). In this case, it takes a long time to heat the substrate (W) and the processing space (312) to the process temperature, and it is also difficult to precisely control the process temperature.

[0038] In the case of the chemical vapor deposition apparatus according to the present invention, by providing heaters at both the upper and lower parts of the processing space, the time required to heat the substrate and the processing space to the process temperature is reduced, and furthermore, the temperature of the substrate and the processing space can be precisely controlled.

[0039] In this case, the lower heater (340) and the upper heater (330) may be composed of heaters with different heating methods. For example, the aforementioned lower heater (340) may be composed of an induction heater, and the upper heater (330) may be composed of a resistance heater.

[0040] In the above configuration, the temperature of the substrate (W) and the processing space (312) can be heated to a temperature similar to the process temperature by the lower heater (340) composed of an induction heater, and then the temperature of the substrate (W) and the processing space (312) can be precisely adjusted to correspond to the process temperature by the upper heater (330) composed of a resistance heater.

[0041] The shape of the induction heating coil constituting the lower heater (340) may be a so-called 'pancake type' circular or rectangular shape. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0042] Meanwhile, as described above, when the lower heater (340) is configured as an induction heater and the upper heater (330) is configured as a resistance heater, noise may be generated by magnetic field interference caused by the AC power supplied to the lower heater (340) and the DC power supplied to the upper heater (330). To eliminate such noise, a noise filter (not shown) may be connected to the upper heater (330). For example, a power supply unit (not shown) that supplies power to the upper heater (330) may be further provided, and a noise filter may be connected to the power supply unit.

[0043] The upper heater (330) and lower heater (340) may be installed inside the chamber (100) by means of a support not shown in the drawing, or may be mounted by being connected to the upper plate (310) and lower plate (320). The installation structure of the upper heater (330) and lower heater (340) is not specifically limited.

[0044] Meanwhile, the upper heater (330) may be divided into a plurality of zone heaters (332, 334, 336) that can be individually controlled in order to heat the substrate (W) and the processing space (312) more efficiently and further control the process temperature more precisely.

[0045] FIG. 2 is a partial perspective view showing the upper heater (330) and lower heater (340), and FIG. 3 is an enlarged view showing the upper heater (330), lower heater (340), upper plate (310) and lower plate (320).

[0046] Referring to FIGS. 1 to 3, the plurality of zone heaters (332, 334, 336) may be provided on the upper plate (310). In this case, the plurality of zone heaters (332, 334, 336) are mounted on the upper plate (310) and can be moved according to the arrangement of the upper plate (310). As a result, there are no interfering parts when performing maintenance on the various components of the chamber (100), thereby contributing to an improvement in throughput by reducing working time.

[0047] For example, the plurality of zone heaters (332, 334, 336) may be divided into a first zone heater (332), a second zone heater (334), and a third zone heater (336). Here, the number of zone heaters (332, 334, 336) is described as an example, and the upper heater (330) may be composed of a single member, and furthermore, it is possible to be composed of two zone heaters or four or more zone heaters.

[0048] As described above, when three zone heaters (332, 334, 336) are provided, the first heating space (S1) corresponding to the first zone heater (332) may correspond to the front end of the processing space (312), that is, the area where the process gas flows into the processing space (312). In this case, the first zone heater (332) may be positioned corresponding to the area from the starting end (D0) of the processing space (312) to the first point (D1). The first point (D1) may be located in front of the front end (A1) of the susceptor (324) or at the front end (A1) of the susceptor (324) along the flow of the process gas in the processing space (312).

[0049] Additionally, the second heating space (S2) corresponding to the second zone heater (334) may correspond to the area corresponding to the susceptor (324). The second zone heater (334) may be positioned between the first point (D1) and the second point (D2) along the processing space (312). Here, the first point (D1) may be located at the front end (A1) of the susceptor (324) or in front of the front end (A1) along the flow of the process gas in the processing space (312), and the second point (D2) may be located at the rear end (A2) of the susceptor (324) or in rear of the rear end (A2) along the flow of the process gas in the processing space (312).

[0050] Accordingly, the substrate (W) can be properly heated by the second zone heater (334), and the second zone heater (334) can be positioned to completely cover the substrate (W) or the susceptor (324) from above. That is, since it is important to maintain the temperature of the substrate (W) at the process temperature during the process for the substrate (W), it is necessary to control the temperature of the substrate (W) by positioning the second zone heater (334), which corresponds to the substrate (W) and the susceptor (324), to completely cover the substrate (W) or the susceptor (324) from above.

[0051] Furthermore, the third heating space (S3) corresponding to the third zone heater (336) may correspond to the rear end of the processing space (312), or the area of ​​the rear end where gas, etc. is discharged from the processing space (312). In this case, the third zone heater (336) may be positioned in the area from the second point (D2) behind the susceptor (324) to the end (D3) of the processing space (312).

[0052] Meanwhile, in the above configuration, the process gas supplied from the side of the processing space (312) by the gas supply unit (200) can be introduced into the front end of the processing space (312), pass through the area where the substrate (W) is placed, and be discharged through the gas exhaust pipe (400) through the rear end of the processing space (312).

[0053] In this case, the aforementioned multiple zone heaters (332, 334, 336) can be individually configured to control the temperature in order to heat the process gas and the processing space (312). By doing so, it is possible to correct the temperature in the region where a temperature deviation occurs on the substrate (W), thereby reducing the temperature deviation of the substrate (W) and improving the thickness and doping uniformity of the film on the substrate (W).

[0054] Meanwhile, the process gas flowing into the front end of the processing space (312) may have a temperature lower than the process temperature of the substrate (W). Accordingly, the first zone heater (332) placed in the front end of the processing space (312) can heat the first heating space (S1) and the process gas to a predetermined first temperature (T1).

[0055] In addition, the second zone heater (334) corresponding to the area where the substrate (W) is placed heats the substrate (W) and the process gas to a predetermined second temperature (T2) and can maintain the temperature of the second heating space (S2) at the process temperature.

[0056] Furthermore, the third zone heater (336) positioned at the rear end of the processing space (312) can heat the third heating space (S3) to a predetermined third temperature (T3). In this case, the third zone heater (336) serves to assist in preventing the temperature of the second heating space (S2), where the substrate (W) is placed, from dropping below the process temperature.

[0057] Meanwhile, FIG. 4 is a graph showing the temperature distribution of the upper plate (310) in the configuration according to FIG. 1 to 3 described above, when the upper heater (330) is not operated and heating is performed only by the lower heater (340). The temperature of the processing space (312) can be indirectly checked by the temperature distribution of the upper plate (310).

[0058] In FIG. 4, the vertical axis represents the temperature, and the horizontal axis represents the distance from the starting end (D0) to the end end (D3) of the upper plate (310) according to the flow of the process gas. Additionally, although not shown in FIG. 1 and FIG. 2, a view port, etc., may be formed on the upper part of the second chamber (300) to measure the temperature of the processing space (312) through a non-contact sensor such as a laser sensor.

[0059] Referring to FIGS. 3 and 4, the temperature of the upper plate (310) corresponding to the first heating space (S1) in the space from the starting end (D0) of the processing space (312) to the first point (D1), that is, the front end of the processing space (312), is gradually increased by heating with the lower heater (340).

[0060] Subsequently, the temperature of the upper plate (310) corresponding to the second heating space (S2) from the first point (D1) to the second point (D2) of the processing space (312), that is, the second heating space (S2) where the substrate (W) is placed, is heated by the lower heater (340) to approximately the process temperature (T PIt can maintain a temperature similar to ).

[0061] Meanwhile, the temperature of the upper plate (310) corresponding to the third heating space (S3) after the second point (D2) of the processing space (312), that is, the rear end of the processing space (312), is the process temperature (T P It gradually descends from ).

[0062] That is, when only the lower heater (340) is operated, the temperature of the first heating space (S1), which corresponds to the front end of the processing space (312), is the lowest, the temperature of the second heating space (S2), where the substrate (W) is placed, is the highest, and the temperature of the third heating space (S3), which corresponds to the rear end of the processing space (312), may be in the middle of the first heating space (S1) and the second heating space (S2).

[0063] Accordingly, the heating temperature of the plurality of zone heaters (332, 334, 336) can be determined according to the temperature of the heating space. For example, the first temperature (T1) of the first zone heater (332) may be the highest, the second temperature (T2) of the second zone heater (334) may be the lowest, and the third temperature (T3) of the third zone heater (336) may be higher than the first temperature (T1) and lower than the second temperature (T2).

[0064] Meanwhile, FIG. 5 is a side view illustrating another embodiment of the upper heater (430). In FIG. 5, the upper heater (330), lower heater (340), upper plate (310), and lower plate (320) are shown in enlarged view, and the same components as in the previously described embodiment are given the same reference numerals.

[0065] Referring to FIG. 5, the upper heater (430) may be composed of two zone heaters, for example, a first zone heater (432) and a second zone heater (434). Since the first zone heater (432) and the first heating space (S1) are similar to the previously described embodiment, a repetitive description is omitted.

[0066] Meanwhile, the second heating space (S2') corresponding to the second zone heater (434) may be extended from the substrate (W) and the susceptor (324) to the rear end of the processing space (312). That is, the second zone heater (434) may be extended by a predetermined length from the rear end (A2) of the susceptor (324).

[0067] In contrast to the second heating space (S2) of the embodiment of FIG. 1 described above having an area corresponding to the susceptor (324), in this embodiment, the second heating space (S2') may extend past the susceptor (324) to the rear end of the processing space (312). In this case, the end portion (D2') of the second zone heater (434) may be positioned so as not to reach the end portion (D3) of the processing space (312).

[0068] If the end portion (D2') of the second zone heater (434) is positioned only up to the rear portion (A2) of the susceptor (324), it may not be easy to heat the substrate (W) to the process temperature. Additionally, if the second zone heater (434) is extended to the end portion (D3) of the processing space (312), the temperature of the process gas discharged from the processing space (312) is approximately similar to the process temperature, which may cause deposition or the like in the gas exhaust pipe (400) or exhaust passage (130), thereby inducing particles.

[0069] Accordingly, the end portion (D2') of the second zone heater (434) is positioned between the rear portion (A2) of the susceptor (324) and the end portion (D3) of the processing space (312), and preferably, the end portion (D2') of the second zone heater (334) can be located in the middle between the rear portion (A2) of the susceptor (324) and the end portion (D3) of the processing space (312).

[0070] Meanwhile, FIG. 6 is a side view illustrating another embodiment of the upper heater (530). In FIG. 6, the upper heater (330), lower heater (340), upper plate (310), and lower plate (320) are shown in enlarged view, and the same components as in the aforementioned embodiment are given the same reference numerals.

[0071] Referring to FIG. 6, the upper heater (530) may be composed of one zone heater (532), for example, a first zone heater (532).

[0072] Meanwhile, the first heating space (S1') corresponding to the first zone heater (532) may be extended from the starting end (D0) of the processing space (312) to the rear end of the processing space (312). That is, the first zone heater (532) may be positioned to be extended by a predetermined length from the rear end (A2) of the susceptor (324).

[0073] Additionally, the end portion (D1') of the first zone heater (332) is positioned between the rear portion (A2) of the susceptor (324) and the end portion (D3) of the processing space (312), and preferably, the end portion (D1') of the first zone heater (332) may be located in the middle between the rear portion (A2) of the susceptor (324) and the end portion (D3) of the processing space (312).

[0074] By doing so, the process gas flowing into the processing space (312) can be effectively heated to the process temperature, and furthermore, the temperature of the process gas discharged from the processing space (312) can be lowered below the process temperature to prevent deposition from occurring in the gas exhaust pipe (400) or exhaust passage (130).

[0075] Meanwhile, FIG. 7 is a side cross-sectional view illustrating a chemical vapor deposition apparatus (2000) according to another embodiment of the present invention. In FIG. 7, the same reference numerals are used for components identical to those in the previously described embodiment.

[0076] Referring to FIG. 7, the chemical vapor deposition apparatus (2000) may adopt a so-called double chamber structure. That is, an inner chamber (300) may be further provided inside the chamber (100) described above, and the susceptor (324), lower heater (340), and upper heater (330) described above may be provided inside the inner chamber (300).

[0077] In addition, the upper plate (310) and lower plate (320) may be provided on the inner side of the inner chamber (300).

[0078] By adopting the so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.

[0079] The aforementioned gas inlet pipe (220) may pass through the inner chamber (300) and be connected to the processing space (312). Additionally, the gas exhaust pipe (400) may pass through the inner chamber (300) at the rear end of the processing space (312) and extend to the outside of the chamber (100).

[0080] In this embodiment, the inner chamber (300) can serve as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor (324), the upper heater (330), and the lower heater (340), and may be composed of carbon felt or graphite felt, etc. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.

[0081] In this way, when the inner chamber (300) or the heat-blocking member is provided, the heat generated by the upper heater (330) and the lower heater (340) is not radiated to the outside of the inner chamber (300), thereby allowing the processing space (312) to be heated more effectively.

[0082] The description of the upper heater (330), the upper plate (310), the lower plate (320), and the lower heater (340) is similar to the previously described embodiment, so a repetitive description is omitted.

[0083] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention. Explanation of the symbols

[0084] 100 : Chamber 110 : Accommodation space 200 : Gas supply unit 220: Gas inlet pipe 300 : Internal chamber 310 : Upper plate 312 : Processing space 320 : Bottom plate 330 : Upper heater 340 : Bottom heater 400 : Gas exhaust pipe 1000 : Chemical Vapor Deposition Equipment

Claims

Claim 1 A chemical vapor deposition apparatus comprising: a chamber; a susceptor provided inside the chamber on which a substrate is placed; a lower heater provided below the susceptor to heat the susceptor; and an upper heater provided above the susceptor; wherein the upper heater is composed of a first zone heater, a second zone heater, and a third zone heater that can be individually temperature-controlled, wherein a first heating space corresponding to the first zone heater corresponds to the front end of a processing space where the substrate is processed, a second heating space corresponding to the second zone heater corresponds to an area corresponding to the susceptor, and a third heating space corresponding to the third zone heater corresponds to the rear end of the processing space. Claim 2 A chemical vapor deposition apparatus according to claim 1, characterized in that the lower heater and the upper heater have different heating methods. Claim 3 A chemical vapor deposition apparatus according to claim 1, characterized in that the lower heater is composed of an induction heating heater and the upper heater is composed of a resistance heating heater. Claim 4 A chemical vapor deposition apparatus according to paragraph 3, further comprising a power supply unit that supplies power to the resistance heating heater, and wherein a noise filter is connected to the power supply unit. Claim 5 A chemical vapor deposition apparatus according to claim 1, characterized in that it comprises a lower plate provided between the susceptor and the lower heater and on which the susceptor is positioned, and an upper plate provided between the susceptor and the upper heater, wherein the space between the lower plate and the upper plate forms a processing space on which the substrate is processed. Claim 6 A chemical vapor deposition apparatus according to claim 5, further comprising a gas supply unit that supplies process gas to the processing space from one side of the processing space. Claim 7 delete Claim 8 A chemical vapor deposition apparatus according to claim 1, characterized in that the plurality of zone heaters are arranged along the flow direction of the process gas. Claim 9 A chemical vapor deposition apparatus according to claim 1, further comprising a heat-blocking member provided inside the chamber and surrounding the susceptor, the upper heater, and the lower heater. Claim 10 A chemical vapor deposition apparatus according to claim 9, characterized in that the heat-blocking member is composed of carbon felt or graphite felt. Claim 11 A chamber; an inner chamber provided inside the chamber and providing a processing space for a substrate; a susceptor provided inside the inner chamber on which the substrate is placed; a lower heater provided below the susceptor to heat the susceptor; and an upper heater provided above the susceptor; wherein the upper heater is composed of a first zone heater and a second zone heater capable of individually controlling the temperature, the first zone heater is placed at the front end of the processing space where the susceptor is not placed, and the second zone heater is placed at the front end of the susceptor or in front of the front end. A chemical vapor deposition apparatus characterized by being positioned between the rear end of the above-mentioned susceptor and the end of the above-mentioned processing space. Claim 12 A chemical vapor deposition apparatus according to claim 11, characterized in that the lower heater is composed of an induction heating heater and the upper heater is composed of a resistance heating heater. Claim 13 delete Claim 14 A chemical vapor deposition apparatus according to claim 11, characterized in that it comprises a lower plate provided between the susceptor and the lower heater on which the susceptor is positioned, and an upper plate provided between the susceptor and the upper heater, wherein the space between the lower plate and the upper plate forms a processing space on which the substrate is processed. Claim 15 A chemical vapor deposition apparatus according to claim 11, characterized in that the inner chamber is composed of carbon felt or graphite felt.

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