Electronic devices including transfer layer, methods of manufacturing the same and electronic apparatuses including electronic device

Abstract

An electronic device comprising a transfer layer according to an exemplary embodiment, a method for manufacturing the same, and an electronic device comprising said electronic device are disclosed. The disclosed electronic device comprises a substrate having a thickness thinner than 0.7 mm, a first transfer layer comprising an organic material provided on a first surface of said substrate, and a first stack provided on said transfer layer. A second stack may be further provided on said first stack. The first and second stacks may include an actively controlled liquid crystal layer. The first and second stacks may include a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, and a device used as a component of a display device.

Description

Technology Field

[0001] The present disclosure relates to an electronic device and a method for manufacturing the same, and more specifically, to an electronic device comprising a transfer layer, a method for manufacturing the same, and an electronic device comprising said electronic device. Background Technology

[0002] Electronic devices may include components that perform various functions, such as semiconductor devices or optical devices. The manufacturing process of such electronic devices may include a material layer deposition process and a patterning process for the deposited material layer. Manufacturing equipment specialized for these processes is used.

[0003] Equipment used in the manufacturing of electronic devices can be affected by the thickness of the substrate on which the device is formed. For example, for substrates with a thickness below a specified level, the risk of cracking during the process may increase, making it difficult to reliably apply manufacturing equipment. Consequently, the thinning or slimming of electronic devices may be limited. The problem to be solved

[0004] An exemplary embodiment provides an electronic device having a thinner thickness than conventional devices.

[0005] An exemplary embodiment provides a method for manufacturing an electronic device having a thinner thickness.

[0006] An exemplary embodiment provides a method for manufacturing an electronic device free from substrate thickness limitations.

[0007] An exemplary embodiment provides an electronic device comprising such an electronic element. means of solving the problem

[0008] An electronic device including a transfer layer according to an exemplary embodiment comprises a substrate having a thickness thinner than 0.7 mm, a first transfer layer provided on a first surface of the substrate and comprising an organic material, and a first stack provided on the first transfer layer.

[0009] In one example, a second stack may be further provided on the first stack. In one example, the second stack may include an actively controlled liquid crystal layer.

[0010] In one example, the second stack may include a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a component used as a touch screen panel, a component used as a DID (Digital Information Display), and a component used as a display device.

[0011] In one example, another member may be further provided between the first and second stacks. In one example, the other member may include a polarization converter.

[0012] In one example, the first stack may include an actively controlled liquid crystal layer.

[0013] In one example, the first stack may include a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a component used as a touch screen panel, a component used as a DID, and a component used as a display device.

[0014] In one example, the electronic device may further include a second transfer layer provided on a second surface of the substrate and a second stack provided on the second transfer layer, wherein the second surface is located at a different position from the first surface. In one example, the second transfer layer may include an organic material.

[0015] In one example, the first stack may include a first electrode layer, and the second stack may include a second electrode layer.

[0016] In one example, the electronic device may further include first and second tracers provided on one side of the first stack, bonding regions provided at each end of the first and second tracers, and a transistor array provided between the first stack and the first and second tracers, and the transistor array may include a MUX TFT.

[0017] A method for manufacturing an electronic device according to an exemplary embodiment comprises the steps of forming a first transfer layer on a first substrate having a first thickness, forming a first stack on the first transfer layer, separating the first transfer layer on which the first stack is formed from the first substrate, and transferring the first transfer layer separated from the first substrate onto a first surface of a second substrate having a second thickness, wherein the second thickness is smaller than the first thickness.

[0018] In one example, the first transfer layer may include an organic material.

[0019] In one example, the process of transferring the first transfer layer onto the first surface of the second substrate may include the process of coating at least one surface corresponding to the first surface of the second substrate and the first surface of the first transfer layer with an adhesive before transferring the first transfer layer.

[0020] In one example, the process further includes transferring a second stack onto a first stack transferred onto a first surface of the second substrate, and may include another member between the first and second stacks. In one example, the process of transferring the second stack includes forming a second transfer layer on a third substrate having a third thickness greater than the second thickness, forming a portion of the material layers included in the second stack on the second transfer layer, separating the second transfer layer having a portion of the material layers included in the second stack from the third substrate, transferring the separated second transfer layer onto one surface of a fourth substrate having a fourth thickness, and transferring the fourth substrate on which the separated second transfer layer has been transferred onto the other member provided on the first stack, wherein the fourth thickness may be smaller than the first and third thicknesses.

[0021] In one example, the first and second stacks each include an actively controlled liquid crystal layer, and the other member may include a polarization converter that affects polarization.

[0022] In one example, the manufacturing method further includes the process of forming a second stack on a second transfer layer and the process of transferring (transferring) the second transfer layer on which the second stack is formed onto a second surface of the second substrate, wherein the second surface may be located at a different position from the first surface. In one example, the first and second stacks may include electrode layers.

[0023] An electronic device according to an exemplary embodiment comprises at least a light source and a beam deflector, and the beam deflector comprises an electronic element according to the exemplary embodiment. Effects of the invention

[0024] In the case of the disclosed electronic device, a transfer layer is formed on a separate substrate (mother substrate), a stack (a component of the electronic device excluding the substrate) having a layer structure (configuration) is formed on the transfer layer, and then the stack, together with the transfer layer, is transferred onto a transfer substrate that serves as the substrate of the electronic device.

[0025] In this way, since the layer structure formed on the substrate of the electronic device is formed on a separate substrate, the substrate to be transferred is freed from deposition processes, patterning processes, etc., for forming the layer structure. That is, it is not directly exposed to semiconductor manufacturing equipment that is used in the deposition and patterning processes, etc., and which has process limitations based on the thickness of the substrate when used in said processes.

[0026] Therefore, the above-mentioned transfer substrate can have a thickness thinner than the limit thickness of the substrate when using the above-mentioned semiconductor manufacturing equipment. In other words, the above-mentioned transfer substrate can be free from the above-mentioned limit thickness.

[0027] Therefore, the disclosed electronic device can have a thinner thickness than conventional electronic devices, so the electronic device itself can be made slimmer than conventional ones, and it can also help to make electronic devices using the disclosed electronic device as a component slimmer.

[0028] In addition, the transfer method using the above-mentioned mother substrate and transfer substrate can also help simplify the complex manufacturing process of devices or components. For example, when forming electrode layers on both sides of an insulating substrate, the electrode layers to be formed on both sides can be formed on separate substrates using a transfer layer, and then the formed electrode layers can be transferred to both sides of the insulating substrate. This method can be much simpler than the conventional method of applying deposition and patterning processes to both sides of the insulating substrate.

[0029] In addition, the main layers included in the disclosed electronic device are formed on a transfer layer of organic material formed on a separate substrate. The main layers can be formed in a low-temperature process in which the transfer layer is not damaged, and to this end, the material of the main layers can be a material suitable for the low-temperature process. Consequently, by following the method for manufacturing the disclosed electronic device, a high-temperature process can be avoided. Brief explanation of the drawing

[0030] FIG. 1 is a cross-sectional view showing an electronic device including a transfer layer according to an exemplary embodiment. FIGS. 2 to 8 are cross-sectional views showing, in steps, a method for manufacturing an electronic device including a transfer layer according to an exemplary embodiment. FIG. 9 is a schematic perspective view showing an example of the electronic element of FIG. 1 when it is a beam deflector. FIG. 10 is a cross-sectional view showing a specific embodiment of the beam deflector of FIG. 9. FIG. 11 is a cross-sectional view showing a holographic stereoscopic image display device including an electronic element (beam deflector) according to an exemplary embodiment. FIG. 12 is a plan view showing an electronic device according to an exemplary embodiment. FIG. 13 is a cross-sectional view showing, in steps, a method of forming electrode layers on both sides of a substrate according to an exemplary embodiment. Specific details for implementing the invention

[0031] Hereinafter, an electronic device including a transfer layer according to an exemplary embodiment, a method for manufacturing the same, and an electronic device including said electronic device will be described in detail with reference to the attached drawings. In the following description, the thickness of the layers or regions depicted in the drawings may be somewhat exaggerated for the clarity of the specification. Furthermore, the embodiments described below are merely exemplary, and various modifications are possible from these embodiments. Also, in the layer structures described below, expressions such as "top" or "top" may include not only those that are in contact and directly above, but also those that are in non-contact and above. In the following description, the same reference numeral in each drawing indicates the same component.

[0032] First, an electronic device including a transfer layer according to an exemplary embodiment will be described.

[0033] FIG. 1 shows a first electronic device (100) including a transfer layer according to an exemplary embodiment.

[0034] Referring to FIG. 1, the first electronic device (100) includes a substrate (110), a transfer layer (120), and a first stack (130). The substrate (110), the transfer layer (120), and the first stack (130) are stacked sequentially in the order described, but are not limited to such stacking. In one example, the substrate (110) may be a semiconductor substrate or a glass substrate, but is not limited thereto. In one example, the semiconductor substrate may be a silicon substrate, but is not limited thereto. In one example, the substrate (110) may be an insulating substrate, or a substrate in which the surface in contact with the transfer layer (120) is an insulating layer. In one example, the thickness of the substrate (110) may be 0.7 mm or less, 0.5 mm or less, or approximately 0.1 mm to 0.6 mm, or 0.7 mm or more, but is not limited thereto.

[0035] The transfer layer (120) is a material layer used to transfer the first stack (130) onto the substrate (110). In one example, the transfer layer (120) may be an organic material (layer) or may include an organic material (layer). In one example, the organic material may include a polymer. In one example, the transfer layer (120) may be formed as a varnish type or a film type. In one example, the material of the varnish type or film type transfer layer may include any one of polysilicon-based, polyimide-based, and polyurethane-based materials. For example, the transfer layer (120) may comprise any one selected from the group consisting of polyimide, polyvinyl alcohol, polyamic acid, polyamide, polyethylene, polystylene, polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, polyarylate, cinnamate-based polymer, coumarin-based polymer, phthalimidine-based polymer, chalcone-based polymer and aromatic acetylene-based polymer material, or at least one selected from the group consisting of polyimide, polyvinyl alcohol, polyamic acid, polyamide, polyamide, polyethylene, polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, polyarylate, cinnamate-based polymer, coumarin-based polymer, phthalimidine-based polymer, chalcone-based polymer and aromatic acetylene-based polymer material. The transfer layer (120) is provided on one side of the substrate (110). The transfer layer (120) may cover the entire surface of the substrate (110). In one example, the surface of the substrate (110) may be a flat plane. In one example, the surface of the substrate (110) may be the top surface of the substrate (110), but depending on the viewpoint, it may be the bottom surface or the side surface.

[0036] In one example, the thickness of the transfer layer (120) may be about 1 μm to 3 μm, but is not limited to this.

[0037] The first stack (130) may include a layer structure composed of a plurality of layers. The plurality of layers of the first stack (130) may be stacked sequentially. In one example, the composition, material, thickness, physical properties, planar shape, cross-sectional shape, etc. of each layer in the plurality of layers may differ from or be the same from each other among at least some layers. In one example, some layers in the plurality of layers may be single layers, and others may not be. In one example, some layers in the plurality of layers may include a single pattern in a single layer, and other layers may be single layers but include a plurality of patterns spaced apart from each other. In one example, the plurality of layers may include a plurality of single layers stacked sequentially, and at least the physical properties (e.g., insulation, conductivity, material state, etc.) of the plurality of single layers may differ from each other. For example, some of the plurality of single layers may be solid material layers, and the remainder or other parts may be non-solid material layers. In one example, the non-solid material layer may include a liquid crystal layer. In one example, the thickness of the first stack (130) may be thicker than the transfer layer (120) and may be the same as or different from the thickness of the substrate (110). In one example, the first stack (130) may be a single stack, but may include a lower stack (130a) and an upper stack (130b) stacked sequentially. In one example, the layer structure and / or layer configuration of the lower stack (130a) and the upper stack (130b) may be the same as or different from each other. In one example, another member (layer) may be further provided between the lower stack (130a) and the upper stack (130b). In one example, the configuration of the lower stack (130a) and the configuration of the upper stack (130b) may be the same as or different from each other. In one example, the thickness (t1) of the lower stack (130a) and the thickness (t2) of the upper stack (130b) may be the same as or different from each other.In one example, the first electronic device (100) may be a beam deflector (BD), a beam deflector lens (BDL), one of sensors, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, or a device used as a component of a display device (e.g., TV, LED display), or may include such a device, but is not limited thereto. In one example, the lower stack (130a) may be a BD or a BDL, or may include a part of the layer structure forming the BD or a BDL. In one example, the upper stack (130b) may be a BD or a BDL, or may correspond to a part of the layer structure forming the BD or a BDL.

[0038] Next, with reference to FIGS. 2 to 8, a method for manufacturing an electronic device including a transfer layer according to an exemplary embodiment will be examined. In the following description, reference numbers identical to those mentioned above indicate identical components, and descriptions thereof are omitted.

[0039] Referring to FIG. 2, a transfer layer (120) is formed on a first substrate (210). In one example, the first substrate (210) may be a semiconductor substrate or a glass substrate. In one example, the semiconductor substrate may be a silicon substrate, but is not limited thereto. The thickness (2t) of the first substrate (210) may be thicker than that of the substrate (110) of FIG. 1. In one example, the transfer layer (120) may be formed using a spin coating method, a roll coating method, a dip coating method, a spray coating method, a screen coating method, or a slot die coating method.

[0040] Next, as illustrated in FIG. 3, a first stack (130) is formed on the transfer layer (120). Depending on the layer configuration of the first stack (130), a deposition process, a photolithography process, a cleaning process, a drying process, etc., may be applied during the process of forming the first stack (130). Since the first stack (130) is formed on the transfer layer (120), the conditions for carrying out the processes included in the process of forming the first stack (130) may satisfy a range that does not degrade or damage the transfer layer (120). The first stack (130) may be formed as a single-layer stack, but as illustrated in FIG. 1, it may also be formed by sequentially stacking a lower stack (130a) and an upper stack (130b).

[0041] Next, as illustrated in FIG. 4, the transfer layer (120) is separated from the first substrate (210). In other words, the first substrate (210) is separated (removed) from the result of FIG. 3. The separation of the first substrate (210) and the transfer layer (120) can be performed by irradiating light of a given wavelength between the first substrate (210) and the transfer layer (120), for example, ultraviolet light can be irradiated between the first substrate (210) and the transfer layer (120). For this separation, a material that can easily decompose in response to the given wavelength may be coated between the first substrate (210) and the transfer layer (120) during the step of forming the transfer layer (120). This material may be coated on the surface of the first substrate (210) where the transfer layer (120) is formed, on the surface of the transfer layer (120) that contacts the first substrate (210), or on both surfaces.

[0042] Next, the result of FIG. 4, which is the result of removing the first substrate (210), namely the sequentially stacked transfer layer (120) and the first stack (130), is aligned on the second substrate (510) as shown in FIG. 5, and the transfer layer (120) and the first stack (130) are lowered onto the second substrate (510) in an aligned state to attach the transfer layer (120) and the second substrate (510). In this way, the first stack (130) is transferred onto the second substrate (510). The transfer layer (120) is literally a material layer used to transfer the first stack (130) formed on the transfer layer (120) from the first substrate (110) to the second substrate (510). This transfer method using the transfer layer (120) can be applied not only to the transfer of BD or BDL but also to the formation of various basic electronic devices, basic semiconductor devices, or various devices used as components in semiconductor devices or electronic devices. The material of the second substrate (510) may be the same as that of the first substrate (210), but may also be different. Since the second substrate (510) is a substrate to be transferred, which simply receives a device or layer structure already formed on the transfer layer (120), it may not undergo processes such as deposition or patterning. Therefore, the thickness (5t) of the second substrate (510) may be thinner than the thickness (2t) of the first substrate (210), and may be thinner than the limit thickness (e.g., 7mm) of the substrate included in the existing electronic device. In one example, the second substrate (510) may have a thickness corresponding to that of the substrate (110) of FIG. 1.

[0043] In this way, the thickness (5t) of the second substrate (510) can be formed thinner than the limit thickness of the substrate of the existing electronic device, thereby allowing the thickness of the electronic device to be reduced (slimming down the electronic device), and furthermore, it can help to slim down the device that uses the electronic device as a component.

[0044] Before transferring the transfer layer (120) onto one side (transfer surface) of the second substrate (510), the corresponding side of the second substrate (510) may be coated with an adhesive (515) or an adhesive. Since the adhesive (515) forms a layer, it may be described as an adhesive layer or an adhesive layer. Due to this adhesive (515), the transfer layer (120) and the second substrate (510) can adhere to each other. In one example, the adhesive (515) may be an Optically Clear Adhesive (OCA) or an Optically Clear Resin (OCR), or may include the same, but is not limited thereto. In one example, the adhesive (515) may include any one of polyester, polyether, epoxy, silicone, and acrylic.

[0045] In one example, the width (5w1) of the second substrate (510) and the width (5w2) of the transfer layer (120) may be the same as each other, but may also be different. For example, the width (5w1) of the second substrate (510) may be larger than the width (5w2) of the transfer layer (210).

[0046] In one example, the adhesive (515) may be provided on the surface of the transfer layer (120) facing the second substrate (510) instead of being provided on the second substrate (510) as shown in FIG. 6.

[0047] In one example, as illustrated in FIG. 7, a first adhesive (715) may be provided on one side of the second substrate (510), and a second adhesive (717) may be provided on the side of the transfer layer (120) facing the second substrate (510). FIG. 7 may be the result of combining FIG. 5 and FIG. 6.

[0048] FIG. 8 shows the result of the transfer layer (120) being transferred onto the second substrate (510).

[0049] Referring to FIG. 8, the transfer layer (120) is transferred onto the second substrate (510), thereby forming the transfer layer (120) and the first stack (130) sequentially stacked on the second substrate (510). In this way, an electronic device including the transfer layer is formed. Depending on the layer configuration of the first stack (130), the electronic device of FIG. 8 can be various electronic devices. For example, if the layer configuration of the first stack (130) includes a layer configuration of BD, the electronic device of FIG. 8 can be BD, and if the layer configuration of the first stack (130) includes a layer structure of a TFT, LED, or optical device (e.g., photodiode), the electronic device of FIG. 8 can be a TFT, LED, or optical device.

[0050] FIG. 9 schematically shows an example where the first electronic element (100) of FIG. 1 is a beam deflector.

[0051] Figure 10 illustrates an exemplary specific structure for the beam deflector schematically shown in Figure 9.

[0052] Referring to FIGS. 9 and 10, the beam deflector (9BD) includes a first beam deflector (900), a polarization converter (990), and a second beam deflector (1000) that are sequentially stacked.

[0053] The polarization converter (990) converts the polarization of light incident on the second beam deflector (1000) so that light deflected in the first direction of movement (D1) by the first beam deflector (900) is deflected in the second direction of movement (D2) by the second beam deflector (1000).

[0054] The first beam deflector (900) has a transfer layer (915) on one side of the first substrate (910). The one side of the first substrate (910) may be an upper surface, but may be expressed differently depending on the perspective. The first substrate (910) may be a substrate to which the transfer layer (915) and a layer structure (configuration) provided on the transfer layer (915) are transferred on the one side. The transfer layer (915) may be in direct contact with the one side of the first substrate (910) and may cover the entire one side. In one example, the material of the first substrate (910) may be the same as the substrate (110) of FIG. 1, but may be different. The first substrate (910) may have the same thickness as the substrate (110) of FIG. 1.

[0055] In the first beam deflector (900), a first electrode layer (920) comprising a plurality of first pattern electrodes (921) exists on the transfer layer (915). The plurality of first pattern electrodes (921) may be spaced apart from each other. The plurality of first pattern electrodes (921) are aligned in a given shape. The first beam deflector (900) includes a second substrate (960) positioned facing the first substrate (910) and the transfer layer (915). A second electrode layer (970) used as a common electrode is provided on one surface of the second substrate (960) facing the first substrate (910). The said one surface of the second substrate (960) may be the bottom surface of the second substrate (960), but may be expressed differently depending on the perspective. The first substrate (910) and the second substrate (960) may be of the same material or different materials.

[0056] The first beam deflector (900) includes a liquid crystal layer (950) between the first substrate (910) and the second substrate (960). The liquid crystal layer (950) includes a liquid crystal (952). The liquid crystal (952) can be oriented such that its long axis is parallel to the first direction of movement (D1) when no electric field is applied.

[0057] In one example, the first substrate (910) and the second substrate (960) may be insulating substrates, and may be glass or transparent plastic substrates.

[0058] In one example, the first pattern electrode (921) is arranged in a first movement direction (D1) that forms a predetermined angle, for example, 45° or less with respect to the horizontal direction (x-axis direction), and may have a stripe shape that extends in a direction crossing the first movement direction (D1). The first pattern electrodes (921) may be made of a transparent conductive material. For example, the first pattern electrodes (921) may include ITO (indium-tin-oxide), IZO (indium-zinc-oxide), ITZO (indium-tin-zinc-oxide), AgNW (silver nano wire), polypyrrole, polyaniline, and PEDOT.

[0059] In one example, the second electrode layer (970) may be a flat-type common electrode. In one example, the second electrode layer (970) may be composed of a plurality of patterned electrodes such as the first electrode layer (920). In this case, the same voltage may be applied to the patterned electrodes of the second electrode layer (970). The second electrode layer (970) may be composed of the same transparent conductive material as the first electrode layer (920).

[0060] A first alignment layer (930) covering a first electrode layer (920) on a first substrate (910) in a first beam deflector (900) may be provided. The first alignment layer (930) may be provided between the first electrode layer (920) and the liquid crystal layer (950). A second alignment layer (980) is provided between the second electrode layer (970) and the liquid crystal layer (950). The surface of the second electrode layer (970) facing the second alignment layer (980) may be covered by the second alignment layer (980). The second alignment layer (980) and the second electrode layer (970) may be in contact with each other. The first and second alignment layers (930, 980) may be provided so that the liquid crystal (952) is oriented in a given direction when no electric field is applied. Soon, when no electric field is applied, the liquid crystal (952) is oriented in the given direction by the first and second orientation layers (930, 980). In one example, the given direction may be a direction in which the major axis of the liquid crystal (952) is parallel to the first direction of movement (D1). In one example, the first and second orientation layers (930, 980) may be polyimide layers or may include polyimide.

[0061] In one example, a plurality of spacers (not shown) made of a polymer material may be further provided between the first substrate (910) and the second substrate (960). The spacers may have a diameter of, for example, 2.5 μm to 3 μm. The spacing between the first and second substrates (910, 960) may be maintained by these spacers.

[0062] The liquid crystal layer (950) can be formed by injecting liquid crystal (952) into the space between the first and second substrates (910, 960). At this time, when no electric field is applied, the liquid crystal (952) can be arranged such that its long axis is parallel to the arrangement direction of a plurality of first pattern electrodes (921). In this way, as the liquid crystal (952) is oriented, when a voltage is applied between the first pattern electrode (921) of the first electrode layer (920) and the second electrode layer (970), the arrangement of the liquid crystal (952) changes, and accordingly, the incident light can be phase-modulated and the incident light can be deflected.

[0063] The entire stack (921+930+950+980+970+960) formed on the transfer layer (915) in the first beam deflector (900) can be a single layer structure (configuration). This layer structure may also be represented as a single stack formed on the transfer layer (915).

[0064] The second beam deflector (1000) includes a transfer layer (940) on one side of the first substrate (1210). The one side of the first substrate (1210) may be an upper surface, but may be expressed differently depending on the perspective. The material of the first substrate (1210) may be the same as or different from the material of the first substrate (910) of the first beam deflector (900). The thickness of the first substrate (1210) may be the same as or different from the thickness of the first substrate (910) of the first beam deflector (900). The first substrate (1210) may be a transfer substrate on which the transfer layer (940) and the layer structure (configuration) provided on the transfer layer (940) are transferred. The transfer layer (940) and the layer structure (1220+1230+1250+1280+1270+1260) formed thereon can be transferred onto the first substrate (1210) according to the transfer method described in FIGS. 2 to 8.

[0065] In the second beam deflector (1000), a first electrode layer (1220) comprising a plurality of second pattern electrodes (1221) is provided on the first substrate (1210). The plurality of second pattern electrodes (1221) may be spaced apart from each other and may have a shape aligned in a given direction. In the second beam deflector (1000), a second substrate (1260) is disposed at a position facing the first substrate (1210) and the transfer layer (940). The second substrate (1260) may be materially identical to or different from the first substrate (1210).

[0066] The second beam deflector (1000) includes a second electrode layer (1270) used as a common electrode on one surface of the second substrate (1260). The one surface of the second substrate (1260) may be a surface facing the first substrate (1210) and may be a bottom surface of the second substrate (1260), but may be expressed differently depending on the perspective. Additionally, the second beam deflector (1000) includes a liquid crystal layer (1250) between the first substrate (1210) and the second substrate (1260). The liquid crystal layer (1250) includes a liquid crystal (1252) that is oriented in a given direction when no electric field is applied. In one example, when no electric field is applied, the liquid crystal (1252) may be oriented in a direction in which the long axis is parallel to the second direction of movement (D2).

[0067] In the second beam deflector (1000), the first substrate (1210) and the second substrate (1260) may be insulating substrates, glass or transparent plastic substrates.

[0068] The second pattern electrode (1221) is arranged in a second movement direction (D2) that forms a predetermined angle, for example, 45° or less with respect to the vertical direction (y-axis direction), and may have a stripe shape that extends in a direction that crosses the second movement direction (D2).

[0069] The second pattern electrodes (1221) may be made of a transparent conductive material. For example, the second pattern electrodes (1221) may include ITO, IZO, and ITZO.

[0070] In one example, the second electrode layer (1270) may be a flat-type common electrode. In one example, the second electrode layer (1270) may be composed of a plurality of patterned electrodes such as the first electrode layer (1220). In this case, the same voltage may be applied to the patterned electrodes of the second electrode layer (1270). The second electrode layer (1270) may be composed of the same transparent conductive material as the first electrode layer (1220).

[0071] The second beam deflector (1000) includes a first alignment layer (1230) covering a first electrode layer (1220) on a first substrate (1210). The first alignment layer (1230) may be provided between the first electrode layer (1220) and the liquid crystal layer (1250). The first alignment layer (1230) may be in contact with the liquid crystal layer (1250).

[0072] A second alignment layer (1280) is provided between the second electrode layer (1270) and the liquid crystal layer (1250) in the second beam deflector (1000). The second alignment layer (1280) may be in contact with the liquid crystal layer (1250). The second electrode layer (1270) may be covered by the second alignment layer (1280).

[0073] Due to the first and second alignment layers (1230, 1280), the liquid crystal (1252) can be oriented in a given direction when no electric field is applied. In one example, when no electric field is applied, the liquid crystal (1252) can be oriented by the first and second alignment layers (1230, 1280) in a direction in which the long axis is parallel to the second direction of movement (D2). In one example, the first and second alignment layers (1230, 1280) may be polyimide layers or may include polyimide.

[0074] In one example, a plurality of spacers (not shown) made of a polymer material may be further provided between the first substrate (1210) and the second substrate (1260). The spacers may have a diameter of, for example, 2.5 μm to 3 μm. The spacing between the first and second substrates (1210, 1260) may be maintained by these spacers.

[0075] The liquid crystal layer (1250) can be formed by injecting liquid crystal (1252) into the space between the first and second substrates (1210, 1260). At this time, when no electric field is applied, the liquid crystal (1252) can be arranged such that its long axis is parallel to the arrangement direction of a plurality of second pattern electrodes (1221). In this way, as the liquid crystal (1252) is oriented, when a voltage is applied between the second pattern electrode (1221) of the first electrode layer (1220) and the second electrode layer (1270), the arrangement of the liquid crystal (1252) changes, and accordingly, the incident light can be phase-modulated and deflected.

[0076] In this way, in the first beam deflector (900) and the second beam deflector (1000), when an electric field is not applied to the liquid crystal (952, 1252), the long axis arrangement of the liquid crystal (952, 1252) is arranged perpendicularly to the stripe pattern of the plurality of first pattern electrodes (921) and second pattern electrodes (1221), and thus the incident light also enters perpendicularly to the stripe pattern and simultaneously parallel to the long axis of the liquid crystal (952, 1252). Therefore, when an electric field is not applied, the long axis of the liquid crystal (952, 1252) is oriented parallel to the first movement direction (D1) and the second movement direction (D2).

[0077] Meanwhile, in the first and second beam deflectors (900, 1000), the first and second pattern electrodes (921, 1221) may be arranged at a constant pitch (P) in the first movement direction (D1) and the second movement direction (D2). For example, the pitch (P) of the first and second pattern electrodes (921, 1221) may be approximately 2 μm. Since the pattern pitch (P) is formed narrowly, the deflection angle of light of the first and second beam deflectors (900, 1000) may be increased. The first and second pattern electrodes (921, 1221) may have the same width. The width of the first and second pattern electrodes (921, 1221) may be approximately 1.5 μm, and the length may be approximately 14 mm. The first and second electrode layers (920, 1220) may each include, for example, 7,200 first pattern electrodes (921) and second pattern electrodes (1221).

[0078] The entire stack (1220+1230+1250+1280+1270+1260) formed on the transfer layer (940) in the second beam deflector (1000) can be regarded as a single layer structure (configuration) and can also be viewed as transferred onto the first substrate (1210) together with the transfer layer (940). This layer structure may also be represented as a single stack formed on the transfer layer (940).

[0079] In one example, if a transfer layer is provided only on the first beam deflector (900) of the beam deflector (9BD) and not on the second beam deflector (1000), the entire plurality of layers (stacks) stacked on the transfer layer (915) in the beam deflector (9BD) (from the first electrode layer (920) to the second substrate (1260)) can be considered as a single layer structure and can be seen as transferred onto the first substrate (910) together with the transfer layer (915). In this case as well, the single layer structure can be represented as a single stack.

[0080] FIG. 11 schematically shows the main configuration of a holographic stereoscopic image display device (1100) having a backlight unit (1120) to which the beam deflector (9BD) shown in FIG. 9 and FIG. 10 is applied.

[0081] Referring to FIG. 11, a holographic stereoscopic image display device (1100) includes a backlight unit (1120) and a spatial light modulator (1180) that modulates light provided by the backlight unit (1120) to form a holographic pattern for reproducing a holographic image. The holographic pattern formed by the spatial light modulator (1180) is formed into a holographic image in space by focusing of a lens (1160). The lens (1160) may be positioned between the backlight unit (1120) and the spatial light modulator (1180). Additionally, the lens (1160) may be positioned in front of the spatial light modulator (1180).

[0082] The spatial light modulator (1180) can form a holographic pattern for modulating incident light by diffracting it according to a holographic signal provided from an image signal processing unit (not shown). This spatial light modulator (1180) may use a phase modulator capable of performing only phase modulation, an amplitude modulator capable of performing only amplitude modulation, and a composite modulator capable of performing both phase modulation and amplitude modulation. Although FIG. 11 illustrates the spatial light modulator (1180) as a transmissive spatial light modulator, it is also possible to use a reflective spatial light modulator. In the case of a transmissive type, the spatial light modulator (1180) may use a semiconductor modulator based on a compound semiconductor such as GaAs, for example, or a liquid crystal device (LCD). In the case of a reflective type, the spatial light modulator (1180) may use a digital micromirror device (DMD), a liquid crystal on silicon (LCoS), or a semiconductor modulator.

[0083] Meanwhile, since the spatial light modulator (1180) is composed of an array of multiple pixels, the array of multiple pixels acts as a pixel grid. Therefore, light incident on the spatial light modulator (1180) is diffracted and interfered not only by the hologram pattern formed in the spatial light modulator (1180) but also by the pixel grid composed of the array of pixels of the spatial light modulator (1180). In addition, some of the incident light is not diffracted by the hologram pattern and passes through the spatial light modulator (1180) as is. As a result, on the focal plane of the lens (1160) where the hologram image is gathered into a point, not only the hologram image (DC signal) but also multiple lattice spots appear together. These multiple lattice spots can be seen by the observer's eye and may act as image noise that degrades the quality of the hologram image and makes viewing the hologram image uncomfortable.

[0084] Such image noise can be diverted from the observer's eyes by a beam deflector (1130) applied to a backlight unit (1120) to send the holographic image to both eyes to display a three-dimensional image. Accordingly, the observer can view only the holographic image. In one example, the beam deflector (1130) may be a beam deflector (9BD) according to the exemplary embodiment described in FIGS. 9 and 10, or may include the same.

[0085] The backlight unit (1120) may include a light source (1111) that generates illumination light, a beam deflector (1130) that deflects the illumination light in two stages to send a holographic image to both eyes to display a three-dimensional image while keeping image noise out of the observer's eyes, and a light guide plate (1150) that directs the illumination light incident from the beam deflector (1130) through the light input surface inward and directs it outward through the light output surface. Additionally, the backlight unit (1120) may further include an input coupler (1151) that directs the illumination light incident through the light input surface of the light guide plate (1150) into the interior of the light guide plate (1150), and an output coupler (1155) that directs the illumination light outward through the light output surface of the light guide plate (1150). Additionally, the backlight unit (1120) may further include a collimating lens (not shown) that converts the illumination light emitted from the light source (1111) and incident on the input coupler (1151) into parallel light. However, if the light source (1111) generates the collimated illumination light itself, the collimating lens may be omitted.

[0086] The light source (1111) may be a coherent light source that emits coherent light. For example, a laser diode (LD) may be used as the light source (1111) to provide light having high coherence. However, since light can be sufficiently diffracted and modulated by a spatial light modulator (1180) as long as it has some degree of spatial coherence, it is also possible to use a light emitting diode (LED), for example, as the light source (1111). In addition to the light emitting diode, any other light source that emits light having spatial coherence may be used. Also, although the light source (1111) is shown as only one block for convenience in FIG. 11, the light source (1111) may include a plurality of point light sources forming an array. For example, the light source (1111) may include a plurality of red emitting lasers, a plurality of green emitting lasers, and a plurality of blue emitting lasers.

[0087] In one example, the light guide plate (1150) may be made of transparent glass or transparent plastic. For example, PMMA (Polymethyl MethAcrylate) may be used as the material for the light guide plate (1150). The light guide plate (1150) may have a flat rectangular shape so that it can serve as an optical waveguide to transmit light. Light incident on one end of the light guide plate (1150) can be transmitted to the opposite end without light loss through internal total reflection.

[0088] The input coupler (1151) serves to diffract light and cause it to travel obliquely into the interior of the light guide plate (1150). To diffract the light, the input coupler (1151) may have a lattice structure. For example, light incident on the input coupler (1151) is diffracted by the input coupler (1151) and then travels obliquely into the interior of the light guide plate (1150) at an angle greater than the critical angle. Then, the light can travel into the interior of the light guide plate (1150) by being repeatedly totally reflected from the upper surface (1150b) and the lower surface (1150a) of the light guide plate (1150).

[0089] The output coupler (1155) serves to diffract light and emit light to the outside of the light guide plate (1150). To diffract light, the output coupler (1155) may have a grating structure. For example, the output coupler (1155) diffracts a portion of the light incident obliquely on the output coupler (1155) and outputs it. In this way, light traveling inside the light guide plate (1150) can be homogeneously emitted to the outside of the light guide plate (1150) through the light-emitting surface of the light guide plate (1150) by the output coupler (1155).

[0090] As illustrated in FIG. 11, the light input surface may be located in one edge area of ​​the upper surface (1150b) of the light guide plate (1150), and the light output surface may be located in the remaining area of ​​the upper surface (1150b) of the light guide plate (1150). The light source (1111) and the beam deflector (1130) may be positioned on the lower side of the light guide plate (1150) corresponding to the light input surface of the light guide plate (1150). Additionally, the input coupler (1151) may be positioned in one edge area of ​​the upper surface (1150b) of the light guide plate (1150) so as to face the light input surface of the light guide plate (1150). The output coupler (1155) may be positioned adjacent to the input coupler (1151) on the upper surface (1150b) of the light guide plate (1150) so as to face the light output surface of the light guide plate (1150).

[0091] The illumination light can pass through the lower surface (1150a) of the light guide plate (1150) and be incident on the input coupler (1151) located on the upper surface (1150b) of the light guide plate (1150). The incident illumination light is diffracted by the input coupler (1151) and travels toward the lower surface (1150a) of the light guide plate (1150) in an inclined direction. Then, the illumination light is totally reflected from the lower surface (1150a) of the light guide plate (1150) and travels obliquely toward the upper surface (1150b) of the light guide plate (1150). A portion of the illumination light from the upper surface (1150b) of the light guide plate (1150) is totally reflected again toward the lower surface (1150a) of the light guide plate (1150), and another portion of the illumination light is diffracted by the output coupler (1155) and exits from the light guide plate (1150) to the outside. In this way, the illumination light emitted from the light guide plate (1150) can be supplied to the spatial light modulator (1180).

[0092] The transfer method using the transfer layer described above can be used to form various devices or layer structures (configurations). For example, the transfer method described above can be used when forming electrode layers on both sides of a substrate. Here, the substrate may be an insulating substrate, and the two sides of the substrate may be opposite sides; for example, one of the two sides may be the upper surface of the substrate, and the other side may be the lower surface of the substrate opposite to the upper surface.

[0093] FIG. 12 shows a second electronic device (1200) according to an exemplary embodiment. FIG. 12 is a plan view showing an example of a BDL.

[0094] Referring to FIG. 12, the second electronic device (1200) may include a substrate layer (1215), an active region (1217) occupying a portion of the substrate layer (1215), first and second tracers (1235, 1245), first and second bonding regions (1235, 1245), and a transistor array (1225), and may further include other components. In one example, the material of the substrate layer (1215) may be the same as the substrate included in the beam deflector (9BD) of FIG. 10, such as the first substrate (910), but is not limited thereto. In one example, the active region (1217) may be covered with a transparent electrode. The active region (1217) may be provided with a second stack containing components that cause beam deflection operation for incident light, and the second stack may be the first stack (130) of FIG. 1 or may include the first stack (130). For example, the second stack may include at least one of the first and second beam deflectors (900, 1000) of the beam deflector (9BD) of FIG. 10.

[0095] The first and second tracers (1219, 1221) may be provided side by side on a substrate layer (1215) on one side of the active region (1217). The first and second tracers (1219, 1221) may be provided side by side in a direction perpendicular to the said side of the active region (1217). The first and second tracers (1219, 1221) may be provided to have a configuration connected to the active region (1217). The first and second tracers (1219, 1221) may each be provided to have a configuration in which the width narrows in a direction away from the active region (1217).

[0096] The first bonding area (1235) may be provided at the end of the first tracer (1219) and may be in contact with said end. The first bonding area (1235) may be a metal bonding pad or may include a metal bonding pad. The second bonding area (1245) may be provided at the end of the second tracer (1221) and may be in contact with the end of the second tracer (1221). The second bonding area (1245) may be a metal bonding pad or may include a metal bonding pad. The materials of the metal bonding pads forming the first and second bonding areas (1235, 1245) may be the same or different from each other.

[0097] The planar shape and / or size of the first and second tracers (1219, 1221) placed between the active area (1217) and the first and second bonding areas (1235, 1245) may be the same as each other, but may also be different.

[0098] A transistor array (1225) may be provided between the active region (1217) and the first and second tracers (1219, 1221), but is not limited thereto. In one example, the transistor array (1225) may include a plurality of thin film transistors (TFTs). In one example, the TFTs may be multiplexer TFTs (MUX TFTs). The transistor array (1225) may be connected to the second stack provided in the active region (1217) and may also be connected to the first and second tracers (1219, 1221).

[0099] In one example, the electronic device described above may include an insulating layer and / or a passivation layer, and the insulating layer and / or passivation layer may include PGMEA (Propylene glycol monomethyl ether acetate), MEDG (Diethylene Glycol Methyl Ethyl Ester), MB (3-Methoxy-1-butanol), resin, and additives.

[0100] FIG. 13 shows an exemplary embodiment of a method for forming electrode layers on both sides of a substrate using a transfer method utilizing the transfer layer described above.

[0101] First, as illustrated in FIG. 13 (a), a first transfer layer (1320) is formed on a first substrate (1310) having a first thickness (13t1). The first substrate (1310) may be an insulating substrate. In one example, the first substrate (1310) may be a multilayer substrate, and at least one of the top surface and bottom surface of the first substrate (1310) may be an insulating layer. The surface of the first substrate (1310) on which the first transfer layer (1320) is formed may be entirely flat. The first transfer layer (1320) may be the transfer layer (120) described in FIG. 1 or may include it, but is not limited thereto. In one example, at least one of the material and thickness of the first transfer layer (1320) may be different from the transfer layer (120) described in FIG. 1. A first electrode layer (1330) is formed on the first transfer layer (1320). The first electrode layer (1330) may include a plurality of electrodes (1330a) spaced apart from each other. The plurality of electrodes (1330a) may be aligned to have a given shape. That is, the plurality of electrodes (1330a) may form an array. For example, the plurality of electrodes (1330a) may be aligned parallel to each other in a given direction in a stripe shape. The thickness of the plurality of electrodes (1330a) may be the same or substantially the same, and the width may also be the same. The expression "substantially the same" implies that they may be the same within the error or tolerance that may occur during the process of forming the plurality of electrodes (1330a). The thickness of the plurality of electrodes (1330a) may be the same or different from that of the first transfer layer (1320). In one example, the thickness of the plurality of electrodes (1330a) may be thinner than that of the first transfer layer (1320). The thickness of the first transfer layer (1320) and the first electrode layer (1330) may both be thinner than the first thickness (13t1) of the first substrate (1310), but is not limited thereto. The plurality of electrodes (1330a) may be represented as a plurality of pattern electrodes.

[0102] In one example, the material of the first electrode layer (1330), that is, the material of the plurality of electrodes (1330a), may be ITO, IZO, ITZO, AgNW, polypyrrole, polyaniline, or pidot, or may include the same.

[0103] Next, as shown in (b) of FIG. 13, the first substrate (1310) is separated from the result of (a), leaving only the first transfer layer (1320) and the first electrode layer (1330) formed thereon.

[0104] Separation of the first substrate (1310) and the first transfer layer (1320) may be achieved by using an interface separation method in which ultraviolet light is irradiated between the first substrate (1310) and the first transfer layer (1320). To this end, an interface separation layer (not shown) that responds to ultraviolet irradiation may be formed between the first substrate (1310) and the first transfer layer (1320). In one example, the interface separation layer may be formed on the surface of the first substrate (1310) where the first transfer layer (1320) is formed, or on the surface of the first transfer layer (1320) that contacts the first substrate (1310), but is not limited thereto.

[0105] Next, the first substrate (1310) is separated, and the remaining first transfer layer (1320) and first electrode layer (1330) are transferred onto the first surface (13S1) of the second substrate (1350) having a second thickness (13t2), as shown in FIG. 13 (c). The second thickness (13t2) is smaller than the first thickness (13t1). In one example, the second thickness (13t2) may be the same as or different from the thickness of the substrate (110) of FIG. 1. In one example, the first surface (13S1) of the second substrate (1350) is the surface on which the first transfer layer (1320) of the second substrate (1350) is transferred, and in FIG. 13 (c), it may be considered as the top surface, but depending on the perspective, the first surface (13S1) may be expressed in various ways, such as the bottom surface, bottom surface, or side surface. The second substrate (1350) is a substrate on which a transfer layer is transferred on both sides, and can be described as a transfer substrate. Before the first transfer layer (1320) is transferred, the first surface (13S1) of the second substrate (1350) may be coated with the aforementioned adhesive or adhesive. Such adhesive or adhesive may also be coated on the surface of the first transfer layer (1320) that is bonded to the first surface (13S1) of the second substrate (1350). Such adhesive or adhesive may also be coated on both the second substrate (1350) and the first transfer layer (1320) as illustrated in FIG. 7.

[0106] The second substrate (1350) may be a single-layer insulating substrate, but may also be a multi-layer or multi-layer insulating substrate. For example, the second substrate (1350) may be a single-layer substrate in which the entire structure is an insulating layer, and the first surface (13S1) on which the first transfer layer (1320) is transferred and the second surface (13S2) on which another transfer layer is transferred in a subsequent process may be an insulating layer or an insulating surface, and a conductive layer may be provided between the first surface (13S1) and the first surface (13S2), but is not limited thereto. The first and second surfaces (13S1, 13S2) face each other and are on opposite sides.

[0107] Next, as illustrated in FIG. 13 (d), a second transfer layer (1370) is formed on a third substrate (1360) having a third thickness (13t3). The material and specifications of the third substrate (1360) may be the same as or different from the first substrate (1310). The third thickness (13t3) may be the same as or different from the first thickness (13t1) and may be greater than the second thickness (13t2). The material and specifications of the second transfer layer (1370) may be the same as the first transfer layer (1320), but may also be different from each other.

[0108] After forming a second transfer layer (1370), a second electrode layer (1380) is formed on the second transfer layer (1370). The second electrode layer (1380) includes a plurality of electrodes (1380a). The plurality of electrodes (1380a) are spaced apart from each other and can form an array of a given shape. The material, specifications, and alignment shape of the plurality of electrodes (1380a) may be the same as the plurality of electrodes (1330a) of the first electrode layer (1330), but may also be different.

[0109] Next, as illustrated in (e) of FIG. 13, the third substrate (1360) is separated (removed) from the result of (d). In other words, the third substrate (1360) and the second transfer layer (1370) are separated. The third substrate (1360) and the second transfer layer (1370) can be separated in the same way as the separation method of the first substrate (1310) and the first transfer layer (1320), but they may also be separated in a different way.

[0110] Next, the result remaining after the third substrate (1360) is separated, namely the second transfer layer (1370) and the second electrode layer (1380) formed thereon, is transferred onto the second surface (13S2) of the second substrate (1350) as shown in (f) of FIG. 13.

[0111] Before transferring the second transfer layer (1370), the second substrate (1350) may be rotated or flipped so that the second surface (13S2) of the second substrate (1350) is positioned on top. Additionally, before transferring the second transfer layer (1370), the second surface (13S2) of the second substrate (1350) may be coated with an adhesive or glue. Such an adhesive or glue may be coated on the surface of the second transfer layer (1370) that is bonded to the second surface (13S2) of the second substrate (1350). Such an adhesive or glue may be coated on both the second substrate (1350) and the second transfer layer (1370) as illustrated in FIG. 7.

[0112] In this way, electrode layers (1330, 1380) are formed on each of the two separated sides (13S1, 13S2) of the second substrate (1350). This layer structure, in which electrode layers (1330, 1380) are formed on each of the two sides (13S1, 13S2) of the substrate (1350), can be used as a component of an electronic element or a component of an electronic device.

[0113] An electrode layer formed on either of the first and second surfaces (13S1, 13S2) of the second substrate (1350) may be represented as the first stack, and an electrode layer formed on the other surface may be represented as the second stack.

[0114] Each electrode layer (1330, 1380) is illustrated as having three electrodes, but this is exemplary, and each electrode layer (1330, 1380) may have one electrode or more than three electrodes.

[0115] Although many details are described in detail in the foregoing description, they should be interpreted as examples of preferred embodiments rather than as limiting the scope of the invention. Therefore, the scope of the invention should not be determined by the described embodiments, but by the technical concept described in the patent claims. Explanation of the symbols

[0116] 5t: Substrate thickness 5w1: Substrate width 5w2: Transfer layer width 9BD: Beam deflector 13t1-13t3: First to third thicknesses 13S1, 13S2: First and second surfaces 100: First electronic component 110: Substrate 120: Warrior Layer 130: 1st Stack 130a, 130b: Lower and upper stacks 210, 510: First and second substrates 515: Adhesive (Adhesive) 715, 717: First and second adhesives 900, 1000: 1st and 2nd beam deflectors 910, 960: 1st and 2nd substrates 915, 940: Transfer layer 920, 970: First and second electrode layers 921, 1221: First and second pattern electrodes 930, 980: First and second orientation layers 950, 1250: Liquid crystal layer 952, 1252: Liquid crystal 990: Polarization converter 1100: Holographic stereoscopic display device 1111: Light source 1120: Backlight unit 1130: Beam deflector 1150: Light guide plate 1150a: Lower surface 1150b: Upper surface 1151:Input coupler 1155:Output coupler 1160: Lens 1180: Spatial light modulator 1200: Second electronic device 1210, 1260: First and second substrates 1215: Substrate layer 1217: Active region 1219: First tracer 1220, 1270: First and second electrode layers 1221: Second tracer 1225: Transistor array 1230, 1280: 1st and 2nd orientation layers 1235: 1st bonding region 1245: Second bonding area 1310, 1350, 1360: First to third substrates 1320, 1370: 1st and 2nd transfer layers 1330, 1380: 1st and 2nd electrode layers 1330a, 1380a: Multiple electrodes t1: Lower stack thickness t2: Upper stack thickness

Claims

Claim 1 An electronic device comprising: a substrate having a thickness thinner than 0.7 mm; a first transfer layer provided on a first surface of the substrate and comprising an organic material; a first stack provided on the first transfer layer; a second transfer layer provided on a second surface of the substrate; and a second stack provided on the second transfer layer; wherein the second surface is positioned facing the first surface. Claim 2 An electronic device according to claim 1, wherein a second stack is further provided on the first stack. Claim 3 In claim 2, the second stack is an electronic device comprising an actively controlled liquid crystal layer. Claim 4 In claim 2, the second stack is an electronic device comprising a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, and a device used as a component of a display device. Claim 5 In claim 2, an electronic device further comprising another member between the first and second stacks. Claim 6 In claim 5, the other member is an electronic device comprising a polarization converter. Claim 7 In claim 1 or 3, the first stack is an electronic device comprising an actively controlled liquid crystal layer. Claim 8 In claim 1, the first stack is an electronic device comprising a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, and a device used as a component of a display device. Claim 9 delete Claim 10 In claim 1, the second transfer layer is an electronic device comprising an organic material. Claim 11 In claim 1, the first stack is an electronic device comprising a first electrode layer. Claim 12 In claim 1 or 11, the second stack is an electronic device comprising a second electrode layer. Claim 13 An electronic device according to claim 1, further comprising: first and second tracers provided on one side of the first stack; bonding regions provided at each end of the first and second tracers; and a transistor array provided between the first stack and the first and second tracers, wherein the transistor array includes a MUX TFT. Claim 14 A method for manufacturing an electronic device comprising: a step of forming a first transfer layer on a first substrate having a first thickness; a step of forming a first stack on the first transfer layer; a step of separating the first transfer layer on which the first stack is formed from the first substrate; a step of transferring (transferring) the first transfer layer separated from the first substrate onto a first surface of a second substrate having a second thickness; a step of forming a second stack on a second transfer layer; and a step of transferring (transferring) the second transfer layer on which the second stack is formed onto a second surface of the second substrate; wherein the second surface is located facing the first surface, and the second thickness is smaller than the first thickness. Claim 15 In claim 14, the first transfer layer comprises an organic material. A method for manufacturing an electronic device. Claim 16 A method for manufacturing an electronic device according to claim 14, wherein the step of transferring the first transfer layer onto the first surface of the second substrate comprises the step of coating at least one surface corresponding to the first surface of the second substrate and the first surface of the first transfer layer with an adhesive before transferring the first transfer layer. Claim 17 A method for manufacturing an electronic device according to claim 14, further comprising the step of transferring a second stack onto a first stack transferred on the first surface of the second substrate, and having another member between the first and second stacks. Claim 18 In claim 17, the step of transferring the second stack comprises: forming a second transfer layer on a third substrate having a third thickness greater than the second thickness; forming a portion of the material layers included in the second stack on the second transfer layer; separating the second transfer layer having a portion of the material layers included in the second stack formed thereon from the third substrate; transferring the separated second transfer layer onto one side of a fourth substrate having a fourth thickness; and transferring the fourth substrate on which the separated second transfer layer has been transferred onto another member provided on the first stack; wherein the fourth thickness is smaller than the first and third thicknesses. Claim 19 A method for manufacturing an electronic device according to claim 17, wherein the first and second stacks each include an actively controlled liquid crystal layer, and the other member includes a polarization converter that affects polarization. Claim 20 A method for manufacturing an electronic device according to claim 14 or 17, wherein the first stack comprises a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, and a device used as a component of a display device. Claim 21 A method for manufacturing an electronic device according to claim 17, wherein the second stack comprises a layer structure included in any one selected from a beam deflector, a beam deflector lens, a sensor, a TFT, a micro LED, a device used as a component of a touch screen panel, a device used as a component of a DID, and a device used as a component of a display device. Claim 22 delete Claim 23 In claim 14, the first and second stacks are a method for manufacturing an electronic device comprising electrode layers. Claim 24 An electronic device comprising at least a light source and a beam deflector, wherein the beam deflector comprises the electronic element of claim 1.

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