Method of cleaning contaminants of semiconductor equipment parts

Abstract

The present disclosure relates to a method for cleaning contaminants of semiconductor equipment components. The technical problem to be solved is to provide a method for cleaning contaminants that can improve cleaning performance by removing oil and contaminants from semiconductor equipment, components, accessories, etc. To this end, the present disclosure provides a method for cleaning contaminants of semiconductor equipment components, comprising the steps of: receiving semiconductor equipment components; and cleaning contaminants of the received semiconductor equipment components with saturated steam.

Description

Technology Field

[0001] The present disclosure relates to a method for cleaning contaminants of semiconductor equipment components, and more specifically, to a method for cleaning contaminants that can improve cleaning performance by using saturated steam to remove oil and contaminants from semiconductor equipment, components, accessories, etc. Background Technology

[0002] Generally, methods using solvents such as acetone and IPA (isopropyl alcohol) have been used to remove oil adsorbed on the surfaces and uneven areas of semiconductor processed products. Furthermore, in the case of products with photoresist and sticky substances on the surfaces of semiconductor equipment components, conventional methods have also involved removing them using solvents such as acetone and IPA, which are harmful to the human body. The solvents currently in use are toxic substances harmful to the human body, causing inflammation of the nose, throat, lungs, and eyes at low concentrations and paralyzing the central nervous system at high concentrations.

[0003] Hydrogen fluoride (fluorine compound), one of the essential gases in the semiconductor etching process, exists in a gaseous state at room temperature (25°C) due to its low boiling point. If the hydrogen fluoride (fluorine compound) used in the etching process remains on the coating surface, it affects the coating properties, leading to changes in the semiconductor process and the generation of fine particles, which in turn results in a decrease in wafer yield. Therefore, cleaning companies perform polishing to remove fluorine (F) ions that have penetrated into the coating layer by scraping off the surface of the coating. However, it is not easy to remove fluorine ions that have penetrated the coating surface without damaging the coating layer.

[0004] The information described above disclosed in the background technology of this invention is intended only to enhance understanding of the background of the present invention and may therefore include information that does not constitute prior art. The problem to be solved

[0005] The present disclosure provides a method for cleaning contaminants from semiconductor equipment components. For example, the present disclosure provides a method for cleaning contaminants that can improve cleaning performance by using saturated steam to remove oil and contaminants from semiconductor equipment, components, accessories, etc. means of solving the problem

[0006] An exemplary method for cleaning contaminants of a semiconductor equipment component according to the present disclosure may include the step of receiving a semiconductor equipment component; and the step of cleaning contaminants of the received semiconductor equipment component with saturated steam.

[0007] In some examples, the temperature of the saturated steam may be 80°C to 150°C.

[0008] In some examples, the pressure of the saturated steam may be 1 bar to 10 bar.

[0009] In some examples, the semiconductor equipment part may include semiconductor equipment, semiconductor parts, or semiconductor processed products.

[0010] In some examples, the distance between the semiconductor equipment component and the spray nozzle that sprays the saturated steam may be 1 cm to 30 cm.

[0011] In some examples, the saturated steam may include water or DIW (De-Ionized Water).

[0012] In some examples, the resistivity of the saturated steam may be 5 MΩ·cm to 18 MΩ·cm.

[0013] In some examples, the contaminant may include fluorine (F) ions, oil, or contaminants used in semiconductor processes.

[0014] In some examples, the fluorine (F) ions may include fluorine compounds such as NF3 or CF4 used during semiconductor processes.

[0015] In some examples, after the cleaning step with the saturated steam, the method may further include a step of cleaning the semiconductor equipment part with ultrasound; and a step of drying the semiconductor equipment part. Effects of the invention

[0016] The present disclosure provides a method for cleaning contaminants from semiconductor equipment components. For example, the present disclosure provides a method for cleaning contaminants that can improve cleaning performance by using saturated steam to remove oil and contaminants from semiconductor equipment, components, accessories, etc. Brief explanation of the drawing

[0017] Figure 1 is a diagram illustrating a method for cleaning contaminants from a conventional semiconductor equipment component. FIG. 2 is a drawing illustrating a method for cleaning contaminants of an exemplary semiconductor equipment component according to the present disclosure. FIG. 3 is a diagram illustrating the results of evaluating oil removal characteristics according to the conventional technology and the exemplary method for cleaning contaminants of semiconductor equipment parts according to the present disclosure. FIG. 4 is a drawing showing an image of the results of evaluating oil removal characteristics according to an exemplary method for cleaning contaminants of semiconductor equipment parts according to the present disclosure. FIG. 5 is a diagram illustrating the heat quantity relationship of saturated steam at different temperatures to explain an exemplary method for cleaning contaminants of semiconductor equipment parts according to the present disclosure. FIG. 6 is a flowchart illustrating a method for cleaning contaminants from an exemplary semiconductor equipment component according to the present disclosure. Specific details for implementing the invention

[0018] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0019] The present disclosures are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art.

[0020] Additionally, in the drawings below, the thickness or size of each layer is exaggerated for convenience and clarity of explanation, and like reference numerals in the drawings refer to like elements. As used herein, the term "and / or" includes any one of the listed items and all combinations of one or more thereof. Furthermore, in this specification, the meaning of "connected" refers not only to cases where Member A and Member B are directly connected, but also to cases where Member C is interposed between Member A and Member B so that Member A and Member B are indirectly connected.

[0021] The terms used herein are for describing specific embodiments and are not intended to limit the invention. As used herein, the singular form may include the plural form unless the context clearly indicates otherwise. Additionally, as used herein, "comprise, include" and / or "comprising, including" specify the presence of the mentioned features, numbers, steps, actions, parts, elements, and / or groups thereof, and do not exclude the presence or addition of one or more other features, numbers, actions, parts, elements, and / or groups.

[0022] Although terms such as "first," "second," etc. are used in this specification to describe various components, parts, regions, layers, and / or parts, it is obvious that these components, parts, regions, layers, and / or parts should not be limited by these terms. These terms are used solely to distinguish one component, part, region, layer, or part from another region, layer, or part. Accordingly, the first component, part, region, layer, or part described below may refer to the second component, part, region, layer, or part without departing from the teachings of the present invention.

[0023] Spatial terms such as "beneath," "below," "lower," "above," and "upper" may be used to facilitate understanding of one element or feature depicted in the drawings and another element or feature. These spatial terms are intended to facilitate understanding of the invention according to various process or usage conditions of the invention and are not intended to limit the invention. For example, if an element or feature in the drawings is inverted, an element or feature described as "beneath" or "below" becomes "upper" or "on top." Therefore, "beneath" is a concept that encompasses "upper" or "below."

[0025] FIG. 1 is a diagram illustrating a method for cleaning contaminants from a conventional semiconductor equipment component. As shown in FIG. 1, generally, to clean contaminants (e.g., fluoride ions) from a semiconductor equipment component, the surface of a ceramic coating layer provided on a substrate can be polished. Accordingly, contaminants present on the surface of the coating layer were removed, but a problem occurred in which the thickness of the coating layer was reduced.

[0027] FIG. 2 is a drawing illustrating a method for cleaning contaminants of an exemplary semiconductor equipment component according to the present disclosure. As shown in FIG. 2, according to the present disclosure, saturated vapor was sprayed onto the surface of a ceramic coating layer provided on a base material to clean contaminants (e.g., fluoride ions) of a semiconductor equipment component. Accordingly, contaminants present on the surface of the coating layer were removed, while the thickness of the coating layer was not reduced. That is, after cleaning the contaminants, the coating layer returned to its original state, making an additional coating layer regeneration process unnecessary or minimized.

[0028] In the present disclosure, semiconductor equipment is cleaned with saturated steam, making it possible to effectively remove oil from the product in a shorter time than conventional cleaning methods.

[0029] For example, to remove fluoride ions, a method was devised to effectively remove fluoride ions in a shorter time than the conventional surface polishing method, and it was confirmed that when cleaned using saturated steam, the fluoride ions were reduced similarly to the conventional method. In addition, while the surface of the coating layer was removed in the conventional cleaning method, the saturated steam cleaning method according to the present disclosure did not remove the surface of the coating layer, and only the fluoride ions were removed.

[0030] In addition, the removal of sticky substances on the surface of semiconductor products using saturated steam (e.g., internal adhesive substances of electrostatic chucks (including polyester, polyimide, acrylic resin, and silicone resin, etc.) or bonding agents and photoresist residue layers used during the semiconductor manufacturing process) was applied to electrostatic chuck products, which are one of the key components in current semiconductor processes, and showed excellent effects compared to existing cleaning methods.

[0032] FIG. 3 is a diagram illustrating the results of evaluating oil removal characteristics according to the conventional technology and the exemplary method for cleaning contaminants of semiconductor equipment parts according to the present disclosure. As shown in FIG. 3, the average contact angle between the base material and water before cleaning (e.g., before testing) was approximately 102°, but after cleaning with the method according to the present disclosure (e.g., after testing), the average contact angle between the base material and water was found to be 68°. That is, it was confirmed that the contact angle was lowered as the surface of the product changed to hydrophilic after cleaning with saturated steam.

[0033] Meanwhile, Table 1 below summarizes the evaluation of fluoride ion removal characteristics using saturated steam according to the present disclosure.

[0034] As shown in Table 1, cleaning was performed for approximately 10 minutes using saturated steam, and ion chromatography (IC) analysis results showed that fluoride ions decreased by approximately 62%, and it was confirmed that there was no change in thickness before and after cleaning.

[0035] In the case of E-Cascade (hot water spray after powder spraying), cleaning was performed for approximately 18 minutes, during which fluoride ions decreased by approximately 60%, but the thickness of the coating layer decreased by approximately 12㎛. Additionally, in the case of E+CO2 (carbon dioxide cooling powder spraying), cleaning was performed for approximately 15 minutes, during which fluoride ions decreased by approximately 60%, but the thickness of the coating layer decreased by approximately 4㎛. Furthermore, in the case of Polishing+E (polishing), cleaning (polishing) was performed for approximately 30 minutes, during which fluoride ions decreased by approximately 62%, but the thickness of the coating layer decreased by approximately 16㎛.

[0036] [Table 1]

[0037]

[0038] In this way, when a cleaning operation was performed using saturated steam according to the present disclosure, a similar reduction in fluoride ions was confirmed in a shorter time than other cleaning methods according to the applicant, and it was also confirmed that there was no reduction in the thickness of the coating layer after cleaning.

[0040] FIG. 4 is a diagram illustrating an image of the results of an evaluation of oil removal characteristics according to an exemplary cleaning method for contaminants of semiconductor equipment parts according to the present disclosure. As shown in FIG. 4, as a result of carrying out the cleaning method using high temperature and high pressure saturated steam according to the present disclosure, it was confirmed that sticky substances were completely removed in a shorter time than other cleaning methods of the applicant.

[0042] FIG. 5 is a diagram illustrating the heat quantity relationship of saturated steam at different temperatures to explain an exemplary method for cleaning contaminants of semiconductor equipment parts according to the present disclosure.

[0043] Saturated vapor is a gaseous state in equilibrium where the number of gas molecules entering a liquid or solid equals the number of molecules evaporating, resulting in no apparent change. Saturated vapor does not decrease in temperature even when cooled; instead, it releases heat in the form of heat of condensation or heat of solidification as it condenses or solidifies. Vapor that has a temperature higher than the saturation temperature is called superheated vapor. When a single component's gaseous and liquid phases coexist in equilibrium, the liquid is a saturated liquid, and the vapor is a saturated vapor.

[0044] Generally, by cleaning semiconductor equipment using saturated steam at a high temperature (e.g., 130°C or higher) and high pressure (e.g., 8 bar), surface oil can be rapidly removed, and fluoride ions remaining inside the coating product, which determines the semiconductor yield, can be removed.

[0045] In some examples, when saturated steam has a temperature of at least 80°C and a temperature of at least 1 bar, energy capable of cleaning is generated while satisfying the conditions of saturated steam.

[0046] Table 2 below is a table measuring the amount of energy generated according to pressure and temperature.

[0047] Total heat is the sum of sensible heat and latent heat, and since it has a maximum energy value between 100°C and 170°C and between 1 bar and 7 bar, it is suitable for cleaning.

[0048] [Table 2]

[0049]

[0050] Meanwhile, DIW (Deionized Water) refers to a state in which ionic components in water have been removed. Therefore, it refers to ultrapure water in a broad sense. Since cations and anions exist in water, DIW must be used for semiconductor cleaning because these cations and anions in the water can affect the semiconductor process. The resistivity of commonly used DIW is between 5 MΩ·cm and 18 MΩ·cm; resistivity of 5 MΩ·cm or less is classified as ordinary water, and resistivity of 18 MΩ·cm or more is classified as ultrapure water.

[0051] In this way, the present disclosure cleans semiconductor equipment using saturated steam to rapidly remove processing oil from the surface of the product without harming the human body. In addition, fluoride ions generated during the semiconductor etching process enter the interior of the coating layer and weaken the bonding of the coating layer, causing particles; however, by using saturated steam, the fluoride ions are allowed to escape from the coating layer without affecting the coating layer. Furthermore, sticky substances on the surface of the semiconductor equipment can be rapidly removed without damaging the base material.

[0052] FIG. 6 is a flowchart illustrating a method for cleaning contaminants of an exemplary semiconductor equipment component according to the present disclosure. As shown in FIG. 6, the method for cleaning contaminants of an exemplary semiconductor equipment component according to the present disclosure may include an receiving step (S1) and a saturated vapor cleaning step (S2).

[0053] In some examples, the contaminant cleaning method according to the present disclosure may further include an ultrasonic cleaning step (S3), a drying step (S4), and a packing step (S5).

[0054] In the receiving stage (S21), various semiconductor equipment parts may be received. In some examples, the semiconductor equipment parts may include semiconductor equipment, semiconductor parts, or semiconductor processed products.

[0055] In some examples, semiconductor equipment components include an electrostatic chuck, heater, chamber liner, shower head, CVD (Chemical Vapor Deposition) boat, focus ring, wall liner, shield, cold pad, source head, outer liner, middle liner, deposition shield, upper liner, heated liner, isolate ring, liner outer, upper ground ring, exhaust plate, edge ring, mask frame, shutter, window, viewport, blank, plate, gas injector, baffle, cover, block, nozzle, It may include an electrode and a cathode.

[0056] In the saturated steam cleaning step (S2), contaminants on the incoming semiconductor equipment parts can be cleaned with saturated steam.

[0057] In some examples, the temperature of the saturated steam may be approximately 80°C to approximately 150°C.

[0058] If the temperature of the saturated steam is approximately 80°C or lower, it is difficult to secure satisfactory cleaning power because it is lower than the desired heat amount, and if it is approximately 150°C or higher, the cleaning power decreases because the moisture in the saturated steam evaporates and turns into dry steam, and there may be a problem where the worker is exposed to the risk of burns.

[0059] In some examples, the pressure of saturated steam can be approximately 1 bar to approximately 10 bar.

[0060] If the pressure of the saturated steam is approximately 1 bar or less, it cannot reach the product to be cleaned and thus cannot be cleaned, and if it is approximately 10 bar or more, the pressure is too strong and may cause damage to the product, and if the base material is weak, it may break or crack.

[0061] In some examples, the distance between the semiconductor equipment component and the spray nozzle spraying saturated steam may be approximately 1 cm to approximately 30 cm.

[0062] If the distance between the saturated steam spray nozzle and the equipment parts is approximately 1 cm or less, it may damage the product, and if the distance between the product and the saturated steam nozzle is approximately 30 cm or more, the optimal temperature and pressure of the saturated steam may change, so a distance between approximately 1 cm and approximately 30 cm must be maintained to maintain optimal cleaning power.

[0063] In some examples, saturated steam may contain water or DIW (De-Ionized Water). In some examples, the resistivity of saturated steam may be approximately 5 MΩ·cm to approximately 18 MΩ·cm.

[0064] When cleaning semiconductor equipment, DIW is used to minimize contamination of the product surface with impurity ions. If the resistivity of the water used in the saturated steam is approximately 5 MΩ·cm or less, it is classified as ordinary water, raising concerns about back-contamination of the product surface by ions present in the water during cleaning. If the resistivity is approximately 18 MΩ·cm or more, it is classified as ultrapure water. Using ultrapure water incurs excessive costs because the interior of the saturated steam unit must be modified to accommodate it.

[0065] In some examples, the contaminant may include fluoride (F) ions, oil, or contaminants used in semiconductor processes. In some examples, the fluoride (F) ions may include fluoride compounds such as NF3 or CF4 used in semiconductor processes.

[0066] In the above ultrasonic cleaning step (S3), semiconductor equipment parts are placed in the DIW and ultrasonic waves are applied to separate various particles that may remain on the surface of the coating layer.

[0067] In the above drying step (S4), the semiconductor equipment part is placed in a clean oven, for example, to remove all moisture that may remain on the surface of the semiconductor equipment part.

[0068] In the packing step (S5) above, semiconductor equipment parts are packaged and returned to the company that requested cleaning.

[0069] In this way, the present disclosure can provide a method for cleaning contaminants of semiconductor equipment parts. For example, the present disclosure can provide a method for cleaning contaminants that improves cleaning performance by using saturated steam to remove oil and contaminants from semiconductor equipment, parts, accessories, etc.

[0071] The above description is merely one embodiment for implementing a method for cleaning contaminants from an exemplary semiconductor equipment component according to the present disclosure. The present invention is not limited to the above-described embodiment, and the technical spirit of the present invention extends to the scope in which various modifications can be made by anyone with ordinary knowledge in the field to which the invention belongs, without departing from the gist of the invention as claimed in the following claims.

Claims

Claim 1 A method for cleaning contaminants on semiconductor equipment parts, comprising: a step of receiving semiconductor equipment parts; a step of cleaning contaminants on the received semiconductor equipment parts with saturated steam; and an ultrasonic cleaning step of placing the semiconductor equipment parts in DIW (De-Ionized Water) and applying ultrasound, wherein the temperature of the saturated steam is 100°C to 150°C and the pressure of the saturated steam is 1 bar to 7 bar. Claim 2 delete Claim 3 delete Claim 4 A method for cleaning contaminants of a semiconductor equipment part according to claim 1, wherein the semiconductor equipment part includes semiconductor equipment, a semiconductor part, or a semiconductor processed product. Claim 5 A method for cleaning contaminants of a semiconductor equipment part according to claim 1, wherein the distance between the semiconductor equipment part and the spray nozzle spraying the saturated vapor is 1 cm to 30 cm. Claim 6 A method for cleaning contaminants of semiconductor equipment parts according to claim 1, wherein the saturated steam comprises water or DIW (De-Ionized Water). Claim 7 A method for cleaning contaminants from semiconductor equipment components according to claim 1, wherein the resistivity of the saturated vapor is 5 MΩ·cm to 18 MΩ·cm. Claim 8 A method for cleaning contaminants of semiconductor equipment parts according to claim 1, wherein the contaminant comprises fluorine (F) ions, oil, or contaminants used in semiconductor processes. Claim 9 A method for cleaning contaminants of semiconductor equipment parts according to claim 8, wherein fluorine (F) ions are contained in fluorine compounds of NF3 or CF4 used during a semiconductor process.

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