Photoelectronic Device with Multi-wavelengths

Abstract

The present invention comprises the steps of: forming a lower semiconductor layer, a first active layer, and a first common semiconductor layer on a substrate to realize a first optical element layer; forming a second active layer and a second common semiconductor layer on the first common semiconductor layer to realize a second optical element layer; forming a third active layer and an upper semiconductor layer on the second common semiconductor layer to realize a third optical element layer; sequentially opening a portion of the second common semiconductor layer, the first common semiconductor layer, and the lower semiconductor layer to horizontally form a first optical element part, a second optical element part, and a third optical element part having the same or different emission wavelengths; forming a first electrode on the lower semiconductor layer and forming a second electrode on each of the first optical element part, the second optical element part, and the third optical element part, or on a portion of the opened lower semiconductor layer, the first common semiconductor layer, and the second common semiconductor layer The technical gist of the invention is a photoelectric device having multiple wavelengths, comprising the step of forming a first electrode and forming a second electrode on each of the first photoelectric element part, the second photoelectric element part, and the third photoelectric element part.

Description

Technology Field

[0001] The present invention relates to a photovoltaic device, wherein photovoltaic parts horizontally arranged on a substrate share a common semiconductor layer, thereby enabling the compactness of the device structure and providing a multi-wavelength photovoltaic device with excellent electrical characteristics. Background Technology

[0002] With the increasing integration and performance of electrical and electronic devices, various attempts are being made regarding manufacturing methods for micro-optical devices such as micro light-emitting diodes and nano light-emitting diodes.

[0003] Recently, high-quality thin film growth technology and device processing technology have improved, making it possible to fabricate optoelectronic devices of various sizes. In particular, research on full-color displays using red (R), green (G), and blue (B) micro light-emitting diodes of 100 µm or less is active.

[0004] Conventional methods for implementing full-color displays utilize blue micro-light-emitting diodes and quantum dots that emit green or red light on the blue micro-light-emitting diodes to realize RGB pixels; however, commercialization is constrained due to issues such as problems with controlling the particle size of quantum dots, reliability issues, and limitations in mass production.

[0005] In addition, green and red micro-LEDs have lower luminous efficiency compared to blue micro-LEDs, which reduces overall efficiency and makes it difficult to ensure uniformity in color distribution and color reproduction.

[0006] In addition, in a structure where conventional red, green, and blue micro light-emitting diodes are vertically stacked, there are issues with color mixing during light emission between the stacked RGB elements, as well as problems with high driving voltage and leakage current between the vertically stacked RGB elements.

[0007] Furthermore, conventionally, since there must be an area occupied by each micro light-emitting diode and the n-electrode and p-electrode for driving it, if a full-color pixel is constructed based on micro light-emitting diodes having independent n-electrodes and p-electrodes, it is not easy to fabricate the ultra-small light-emitting diodes required for realizing large-area, ultra-high-resolution displays. The problem to be solved

[0008] The present invention was derived from the above necessity and aims to provide a multi-wavelength optoelectronic device with excellent electrical characteristics, in which optical element parts horizontally arranged on a substrate share a common semiconductor layer, thereby enabling the device structure to be compact. means of solving the problem

[0009] The present invention for achieving the above objective comprises: a first optical element layer implemented by forming a lower semiconductor layer, a first active layer, and a first common semiconductor layer on a substrate; a second optical element layer implemented by forming a second active layer and a second common semiconductor layer on the first common semiconductor layer; a third optical element layer implemented by forming a third active layer and an upper semiconductor layer on the second common semiconductor layer; a first optical element part, a second optical element part, and a third optical element part having the same or different emission wavelengths formed horizontally by sequentially opening a portion of the second common semiconductor layer, the first common semiconductor layer, and the lower semiconductor layer; a first electrode formed on the lower semiconductor layer; a second electrode formed respectively on the first optical element part, the second optical element part, and the third optical element part; or formed in a portion of the opened lower semiconductor layer, the first common semiconductor layer, and the second common semiconductor layer. The technical gist of the invention is a photoelectric device having multiple wavelengths, comprising: a first electrode and a second electrode formed respectively on the first optical element part, the second optical element part, and the third optical element part.

[0010] In addition, the first optical element part, the second optical element part, and the third optical element part may be formed to operate independently of each other, and in addition, the second optical element part and the third optical element part may be formed to operate independently or in conjunction with each other by horizontally sharing one or more of the first common semiconductor layer and the second common semiconductor layer.

[0011] In addition, the step of forming the second optical element layer may form a plurality of second optical element layers by repeatedly performing the process of forming an active layer between common semiconductor layers.

[0012] In addition, the second common semiconductor layer and the first common semiconductor layer may have an open shape formed in any one of polygonal, circular, elliptical, and bridge shapes.

[0013] Here, it is preferable that the first electrode formed on the second common semiconductor layer, the first common semiconductor layer, and the lower semiconductor layer is arranged on the same horizontal line and connected to form a common electrode.

[0014] In addition, it is preferable to form a protective film with an open electrode region over the entire area of ​​the photoelectric device before or after the formation of the first and second electrodes. Furthermore, after the formation of the protective film, it is preferable to form a common electrode by connecting the first electrode formed on the lower semiconductor layer and the first electrode formed in a region on the first common semiconductor layer and the second common semiconductor layer.

[0015] In addition, it is preferable to form the first electrode and the second electrode by adjusting their height so that their upper ends are located on the same plane.

[0016] In addition, the above material is preferably one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass.

[0017] Additionally, a buffer layer may be further formed between the above substrate and the above lower semiconductor layer, and the buffer layer may be formed as a single layer or as multiple layers by combining two or more of any one of the following materials: GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or formed as a single layer or multiple layers by combining two or more of these materials.

[0018] Additionally, the lower semiconductor layer may be an n-type semiconductor layer or a p-type semiconductor layer, and the upper semiconductor layer may be a p-type semiconductor layer or an n-type semiconductor layer. The n-type semiconductor layer may be formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb, n-AlGaInSb, n-AlGaInSb, n-AlGaInSb, n-AlGaInSb, or n-AlGaInSb. Alternatively, it may be formed as a single layer or a plurality of layers combining two or more of these materials. The p-type semiconductor layer is formed by combining multiple layers, and the p-type semiconductor layer may be formed as a single layer or as multiple layers combining two or more of any one of p-GaN, p-InGaN, p-AlGaN, p-InAlGaN, p-InAlGaP, p-GaAs, p-AlGaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb, or may be formed as a single layer or as multiple layers combining two or more of the same by mixing two or more of the same.

[0019] In addition, the first active layer, the second active layer, and the third active layer can each be formed by repeatedly depositing multiple layers that are combinations of two or more of GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb.

[0020] Additionally, the first common semiconductor layer and the second common semiconductor layer may each include a tunnel junction layer, and the first common semiconductor layer and the second common semiconductor layer may each have an n-type semiconductor layer and a p-type semiconductor layer formed above and below the tunnel junction layer, respectively. Furthermore, a diffusion barrier layer and an electron blocking layer may each be formed between the p-type semiconductor layer and the first active layer, between the p-type semiconductor layer and the second active layer, and between the upper semiconductor layer if it is a p-type semiconductor layer.

[0021] In addition, the first electrode may be formed in any one of the shapes of a polygon, a circle, an ellipse, and a bridge, and it is also preferable that the first electrodes be arranged on the same horizontal line and connected to each other to form a common electrode. Effects of the invention

[0022] As such, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming a plurality of optical element layers including an active layer and a common semiconductor layer, and forming optical element parts horizontally arranged on a substrate through a selective etching and opening process.

[0023] In addition, by manufacturing the optical device part such that the optical device layer formed in the middle shares a common semiconductor layer with the optical device layers formed on the top and bottom, the device structure can be made compact, and since RGB pixels can be implemented in the horizontal direction on a single substrate, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing an optical device with excellent electrical characteristics.

[0024] In addition, a photoelectric device according to one embodiment of the present invention provides a structure that can implement a common electrode by connecting the first electrodes to each other, or can adjust the area of ​​the first electrode to improve electron spreading and thereby provide a photoelectric device that improves luminous efficiency.

[0025] In addition, due to the selective sharing structure of the common semiconductor layer in the optical device section, each optical device section can operate independently or in conjunction with one another, and as needed, the operation of a single or multiple optical device sections according to the emission wavelength can be easily implemented, thereby facilitating the control of the emission area and improving the uniformity of color distribution and color reproduction by reinforcing optical device sections with low emission efficiency. Brief explanation of the drawing

[0026] FIG. 1 - Schematic diagram of a method for manufacturing a photoelectric device according to an embodiment of the present invention. FIGS. 2 to 7 - Schematic diagrams of photoelectric devices according to various embodiments of the present invention. FIGS. 8 to 12 - Figures showing example photographs of actual implementation of a photovoltaic device according to an embodiment of the present invention. Specific details for implementing the invention

[0027] The present invention designs the shape and structure of the optical element part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0028] In particular, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming a plurality of optical element layers including an active layer and a common semiconductor layer, and forming optical element parts horizontally arranged on a substrate through a selective etching and opening process.

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. FIG. 1 is a schematic diagram of a method for manufacturing a photovoltaic device according to an embodiment of the present invention, FIG. 2 to 7 are schematic diagrams of photovoltaic devices according to various embodiments of the present invention, and FIG. 8 to 12 are drawings showing examples of actual implementation of a photovoltaic device according to an embodiment of the present invention.

[0031] As illustrated in FIG. 1, a photoelectric device having multiple wavelengths according to an embodiment of the present invention comprises: a first photoelectric device layer (210) implemented by forming a lower semiconductor layer (110), a first active layer (120), and a first common semiconductor layer (130) on a substrate (10); a second photoelectric device layer (220) implemented by forming a second active layer (140) and a second common semiconductor layer (150) on the first common semiconductor layer (130); a third photoelectric device layer (230) implemented by forming a third active layer (160) and an upper semiconductor layer (170) on the second common semiconductor layer (150); and a horizontally formed portion of the second common semiconductor layer (150), the first common semiconductor layer (130), and the lower semiconductor layer (110) having the same or different emission wavelengths. It is characterized by including a first optical element section (310), a second optical element section (320), and a third optical element section (330), a first electrode (510) formed on the lower semiconductor layer (110), and a second electrode (520) formed respectively on the first optical element section (310), the second optical element section (320), and the third optical element section (330), or a first electrode (510) formed in a region on the open lower semiconductor layer (110), the first common semiconductor layer (130), and the second common semiconductor layer (150), and a second electrode (520) formed respectively on the first optical element section (310), the second optical element section (320), and the third optical element section (330).

[0032] The light-emitting device according to the present invention can be applied to light-emitting diodes (LEDs), micro-LEDs, nano-LEDs, ultraviolet LEDs, infrared LEDs, laser diodes (LDs), photodiodes (PDs), avalanche photodiodes (APDs), etc. by using III-V, II-VI, and IV-IV compound semiconductors, or compound semiconductors mixed therewith.

[0033] As such, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming multiple optical element layers including an active layer and a common semiconductor layer, and forming optical element parts horizontally arranged on a substrate through a selective etching and opening process.

[0035] According to one embodiment of the present invention, a lower semiconductor layer (110), a first active layer (120), and a first common semiconductor layer (130) are first formed on a substrate (10) to form a first optical element layer (210), a second active layer (140) and a second common semiconductor layer (150) are formed on the first common semiconductor layer (130) to form a second optical element layer (220), and a third active layer (160) and an upper semiconductor layer (170) are formed on the second common semiconductor layer (150) to form a third optical element layer (230) (Fig. 1(a)).

[0036] Additionally, the step of forming the second optical element layer (220) may involve repeatedly performing the process of forming an active layer between common semiconductor layers to form a plurality of second optical element layers (220). Here, the plurality of second optical element layers (220) may have the same or different emission wavelengths.

[0037] The above-mentioned substrate (10) includes a substrate used in the manufacturing process of a semiconductor device or a thin film formed on the substrate, and uses any one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass.

[0038] The lower semiconductor layer (110) and the upper semiconductor layer (170) may be an n-type semiconductor layer or a p-type semiconductor layer, or the upper semiconductor layer (170) may be a p-type semiconductor layer or an n-type semiconductor layer.

[0039] Here, the n-type semiconductor layer may be formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb. Alternatively, it may be formed as a single layer or a plurality of layers combining two or more of the following materials by mixing two or more materials.

[0040] In addition, the p-type semiconductor layer may be formed as a single layer or a plurality of layers combining two or more of any one of p-GaN, p-InGaN, p-AlGaN, p-InAlGaN, p-InAlGaP, p-GaAs, p-AlGaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb, or may be formed as a single layer or a plurality of layers combining two or more of the same by mixing two or more of the materials.

[0041] Additionally, if necessary, the lower semiconductor layer (110) and the upper semiconductor layer (170) may form a single or multiple tunnel junction layer. Accordingly, the polarity (n-type or p-type) of the uppermost electrode formed on each optical element can be formed differently.

[0042] Additionally, a buffer layer (20) may be further formed between the substrate (10) and the lower semiconductor layer (110). The buffer layer (20) is intended to buffer lattice mismatch between the substrate (10) and the semiconductor layer, and may be formed optionally. According to one embodiment of the present invention, the buffer layer (20) is formed as a single layer or a plurality of layers by combining two or more of the materials selected from GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or is used by mixing two or more materials to form a single layer or a plurality of layers by combining two or more of the materials. The above buffer layer (20) may be a single layer depending on the type of substrate and lower semiconductor layer (110), or the material may be stacked in multiple layers. The above buffer layer (20) may be formed by a known physical or chemical deposition method.

[0043] In addition, the first active layer (120), the second active layer (140), and the third active layer (160) according to one embodiment of the present invention may be formed by repeatedly depositing a plurality of layers combining two or more of GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb. By combining these materials, the active layers may be formed such that they have the same emission wavelength, or that one or a part of the active layer has a different emission wavelength from the remaining active layer.

[0044] According to one embodiment of the present invention, to implement an optical device having red (R), green (G), and blue (B) emission wavelengths, an active layer having at least three different emission wavelengths is formed. Generally, the band gap can be controlled by controlling the elements doped in the material. Generally, for red, a non-nitride material such as GaAs is used, and for green, a GaP series or a non-nitride material or a nitride material can be used by controlling doping elements such as Al and In.

[0045] In one embodiment of the present invention, a buffer layer (20) is formed on a substrate (10), and above it, a first active layer (120) having a blue light emission wavelength, a second active layer (140) having a green light emission wavelength, and a third active layer (160) having a red light emission wavelength are formed in that order. Generally, in a device having such a structure, the light emission direction is the direction toward the substrate, and a CMOS backplane, which is the driving substrate of the light-emitting device, is located in the opposite direction.

[0046] In addition, according to one embodiment of the present invention, the first common semiconductor layer (130) and the second common semiconductor layer (150) each include a tunnel junction layer, and are generally formed by joining a high-concentration p-type semiconductor layer and a high-concentration n-type semiconductor layer. In one embodiment of the present invention, the doping concentration of the tunnel junction layer is 1 × 10⁻⁶ each. 18 ~ 1 × 10 21 cm -3 It is formed to that extent.

[0047] According to one embodiment of the present invention, the tunnel joint layer is n ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++ -AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ - Among the AlGaAs layers, a p / n junction can be selected, and such tunnel junction layers may be formed as multiple layers.

[0048] The tunnel junction layer in the present invention is formed with a high concentration of n-type (n++) semiconductor layers and a high concentration of p-type (p++) semiconductor layers to enhance electron-hole recombination in the active layer, and since it is implemented with a high concentration of n-type or p-type semiconductor layers and can also perform the role of an electrode layer of the optical device, the shape and structure of the tunnel junction layer (common semiconductor layer) can be designed by considering the arrangement of electrodes.

[0049] In addition, according to one embodiment of the present invention, the first common semiconductor layer (130) and the second common semiconductor layer (150) may each have an n-type semiconductor layer and a p-type semiconductor layer formed on the upper and lower portions of the tunnel junction layer, respectively, and specific examples of the n-type semiconductor layer and the p-type semiconductor layer are as described above.

[0050] In addition, according to one embodiment of the present invention, a diffusion barrier layer or an electron blocking layer is formed between the p-type semiconductor layer and the first active layer (120), between the p-type semiconductor layer and the second active layer (140), and between the upper semiconductor layer (170) if the upper semiconductor layer is a p-type semiconductor layer, thereby improving the electron-hole coupling efficiency. Here, the diffusion barrier layer or the electron blocking layer may use one or more of the above-mentioned p-type semiconductor layer materials.

[0051] For example, in one embodiment of the present invention, a buffer layer (20), an n-type lower semiconductor layer (110), a first active layer (blue light-emitting material) (120), and a first common semiconductor layer (n ++ -GaN layer / p ++ -GaN layer or n-type semiconductor layer / n ++ -GaN layer / p ++ -GaN layer / p-type semiconductor layer or n-type semiconductor layer / n ++-GaN layer / p ++ - A first optical device layer (210) is implemented by forming a GaN layer / p-type semiconductor layer / diffusion barrier layer or electron blocking layer) (130), and a second active layer (green light-emitting material) (140) and a second common semiconductor layer (n ++ -GaN layer / p ++ -GaN layer or n-type semiconductor layer / n ++ -GaN layer / p ++ -GaN layer / p-type semiconductor layer or n-type semiconductor layer / n ++ -GaN layer / p ++ - A second optical device layer (220) is implemented by forming a GaN layer / p-type semiconductor layer / diffusion prevention layer or electron blocking layer) (150), and a second common semiconductor layer (n ++ -GaN layer / p ++ -GaN layer or n-type semiconductor layer / n ++ -GaN layer / p ++ -GaN layer / p-type semiconductor layer or n-type semiconductor layer / n ++ -GaN layer / p ++ A third active layer (red light-emitting material) (160) and a p-type upper semiconductor layer (170) are formed on a GaN layer / p-type semiconductor layer / diffusion barrier layer or electron blocking layer (150) to realize a third optical element layer (230). In other embodiments, the p-type and n-type may be formed interchangeably, and depending on the type of common electrode (n-type or p-type), the n-type and p-type may be selected and formed in each layer.

[0052] Here, as described above, the second optical element layer (220) may be formed in multiple numbers by repeatedly performing the process of forming an active layer between common semiconductor layers. This allows for the repeated formation of an active layer of an optical element part with low luminous efficiency as needed, or for improving the uniformity of color distribution and color reproduction due to color mixing.

[0053] Accordingly, the intermediate optical element layers formed according to one embodiment of the present invention share a common semiconductor layer between them, and this not only acts as an n-type semiconductor layer or a p-type semiconductor layer in the active layer formed above and below the common semiconductor layer to provide electrons and holes to the active layer, but can also be implemented as a high-concentration n-type semiconductor layer or a p-type semiconductor layer to perform the role of an electrode layer.

[0054] By having these optical device layers share a common semiconductor layer and appropriately forming and arranging the structure of the optical device part and the electrode structure realized thereby, it is possible to compact the overall device structure, thereby enabling the manufacture of micro or nano light-emitting diodes suitable for large-area, high-resolution displays.

[0056] Then, a portion of the second common semiconductor layer (150), the first common semiconductor layer (130), and the lower semiconductor layer (110) is sequentially opened to form a first optical element part (310), a second optical element part (320), and a third optical element part (330) having the same or different light emission wavelengths horizontally on the substrate (10) (Fig. 1(b), (c), (d)).

[0057] According to an embodiment of the present invention, a buffer layer (20), a lower semiconductor layer (110), a first active layer (120) with a blue emission wavelength, a first common semiconductor layer (130), a second active layer (140) with a green emission wavelength, a second common semiconductor layer (150), a third active layer (160) with a red emission wavelength, and an upper semiconductor layer are formed on a substrate (10), and then a portion of the second common semiconductor layer (150), the first common semiconductor layer (130), and the lower semiconductor layer (110) are opened sequentially to form an optical device part including each active layer.

[0058] First, a portion of the second common semiconductor layer (150) is opened to form a third optical element part (330) implemented with an upper semiconductor layer (170), a third active layer (160) having a red emission wavelength, and the second common semiconductor layer (150) (Fig. 1(b)). This allows the third optical element part (330) to be implemented while opening a portion of the second common semiconductor layer (150) by masking the third optical element part area and etching the remaining area. If necessary, the open area of ​​the second common semiconductor layer (150) can be adjusted by controlling the masking area.

[0059] Then, a portion of the first common semiconductor layer (130) is opened to form a second optical element part (320) implemented with a second common semiconductor layer (150), a second active layer (140) having a green light emission wavelength, and the first common semiconductor layer (130) (Fig. 1(c). This allows a portion of the first common semiconductor layer (130) to be opened by masking the third optical element part (330) and the second optical element part area, and etching the remaining area. The open area of ​​the first common semiconductor layer (130) can be controlled by adjusting the masking area as needed.

[0060] Then, a portion of the lower semiconductor layer (110) is opened to form a first optical element part (310) implemented with a first common semiconductor layer (130), a first active layer (120) having a blue light emission wavelength, and the lower semiconductor layer (110) (Fig. 1(d)). This is achieved by masking the regions of the first optical element part (310), the second optical element part (320), and the third optical element part, and etching the remaining region so that a portion of the lower semiconductor layer (110) is opened.

[0061] Here, the number of photoluminescent elements in the horizontal direction can be controlled by adjusting the masking area and the open area of ​​each semiconductor layer as needed. That is, light emission can be enabled in combinations such as RRGB, RRGGB, and RGGB as needed, thereby reinforcing photoluminescent elements with low luminous efficiency depending on the material itself or the height and position of the element to ensure uniformity of color distribution and color reproduction.

[0062] At this time, if necessary, the first optical element part (310), the second optical element part (320), and the third optical element part (330) can be completely separated except for the substrate (10), and this can be implemented by an isolation process, etc. This allows each optical element part to operate independently of each other, and the optical element parts are formed horizontally on the substrate (10), so that RGB-pixels can be implemented through independent operation without color mixing between them.

[0063] Additionally, the second optical element part (320) and the third optical element part (330) formed horizontally on the substrate (10) may be formed to operate independently or in conjunction with each other by sharing one or more of the first common semiconductor layer (130) and the second common semiconductor layer (150) horizontally. Depending on the need, various optical element parts that emit light simultaneously, such as RG, RGB, and GB, can be attempted.

[0064] Additionally, a current spreading layer (410) may be optionally formed on each optical element or an activation process may be optionally performed to further increase the luminous efficiency (Fig. 1(e)). The activation process may be performed by heat treatment in the range of 200°C to 900°C for 30 seconds to 2 hours and may be performed in one or more atmospheres of Air, O2, N2, Ar, or a vacuum atmosphere. Additionally, the heat treatment may be performed in the range of 200°C to 900°C for 30 seconds to 2 hours before forming the current spreading layer (410), and the current spreading layer (410) may be formed and the heat treatment process repeated after performing the activation process in one or more atmospheres of Air, O2, N2, Ar, or a vacuum atmosphere.

[0066] Then, a first electrode (510) is formed on the lower semiconductor layer (110), and a second electrode (520) is formed on each of the first optical element part (310), the second optical element part (320), and the third optical element part (330), or a first electrode (510) is formed in a region on the open lower semiconductor layer (110), the first common semiconductor layer (130), and the second common semiconductor layer (150), and a second electrode (520) is formed on each of the first optical element part (310), the second optical element part (320), and the third optical element part (330) (Fig. 1(f)).

[0067] Additionally, by adjusting the degree of open area of ​​the second common semiconductor layer (150) and the first common semiconductor layer (130) to form a first electrode (510) on top thereof, the second common semiconductor layer (150) and the first common semiconductor layer (130) are made to perform the role of the first electrode (e.g., n electrode) (510) of the third optical element part (330) and the second optical element part (320). Here, the second common semiconductor layer (150) and the first common semiconductor layer (130) that are bonded to the first electrode (510) are formed as a highly doped n++ semiconductor layer (e.g., n++-GaN layer) in the tunnel junction layer, so that they can perform the role of an electrode layer.

[0068] Here, the tunnel junction layer serves to provide electrons and holes from the upper and lower parts of the active layer as described above, and also functions as an electrode layer for the optoelectronic device formed in the upper region by high-concentration doping.

[0069] Additionally, the second common semiconductor layer (150) and the first common semiconductor layer (130) may have an open shape formed in any one of polygonal, circular, elliptical, and bridge shapes, but are not limited thereto.

[0070] In one embodiment of the present invention, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is shown to be formed as a square (see FIG. 3, FIG. 4, FIG. 5, FIG. 6, FIG. 7) or a bridge shape (see FIG. 2), and a second electrode (520) is formed on each optical element area, and a first electrode (510) is formed in the open area to realize an optical element.

[0071] Here, the first electrode (510) formed on the second common semiconductor layer (150), the first common semiconductor layer (130), and the lower semiconductor layer (110) may be arranged on the same line and connected to each other to form a common electrode (512) (see FIG. 2, FIG. 3, FIG. 4, FIG. 5, FIG. 7).

[0072] Additionally, the first electrode (510) may be formed in any one of a polygonal, circular, elliptical, or bridge shape depending on the shape and structure of the optical element part, and a common electrode (512) may be formed by designing the ends of the first electrode (510) to be placed on the same line. In one embodiment of the present invention, the first electrode (510) is shown to be formed in a square or bridge shape.

[0073] Additionally, after forming the first electrode (510) and the second electrode (520), a passivation (610) with an open electrode area may be formed over the entire area of ​​the photovoltaic device, or a passivation (610) may be formed over the entire area of ​​the photovoltaic device first, and then a part of the passivation (610) may be opened and the first electrode (510) and the second electrode (520) may be formed in the opened part area (Fig. 1(g)).

[0074] Here, the protective film (610) is SiO2, SiO x , SiN x One or more of the following materials are used: Si3N4, Al2O3, AlN, BN, TaN, TiN, ZrN, WN, VN, NbN, YN, and HfN, and the thickness of the protective film is formed in the range of 25 nm to 2 µm.

[0076] After the formation of the protective film (610), the first electrode (510), and the second electrode (520), a common electrode (512) can be formed by connecting the first electrode (510) formed on the lower semiconductor layer (110) and the first electrode (510) formed in a region on the first common semiconductor layer (130) and the second common semiconductor layer (150) to each other (Fig. 1(h)). As described above, the common semiconductor layer and the first electrode (510) may be designed in a bridge type to facilitate connection to the common electrode (512).

[0077] In addition, the first electrode (510) and the second electrode (520) can be formed by adjusting their height so that their upper ends are positioned on the same plane. This facilitates the bonding of the photoelectric device with a PCB or CMOS backplane.

[0078] Thus, the photoelectric device according to one embodiment of the present invention designs the shape and structure of the photoelectric device part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0080] Hereinafter, various embodiments of the present invention will be described in more detail with reference to the attached drawings.

[0081] According to Embodiment 1 of the present invention as illustrated in FIG. 2, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element (310) for blue light emission, a second light-emitting element (320) for green light emission, and a third light-emitting element (330) for red light emission are formed horizontally on the substrate (10).

[0082] In the epitaxial structure of the vertically stacked buffer layer and optical element layer, the third optical element region is masked and the remaining region is etched so that a portion of the second common semiconductor layer (150) is opened to form the third optical element region (330).

[0083] Then, the third optical element region and the second optical element region are masked, and the remaining region is etched, but the second common semiconductor layer (150) is etched in a bridge shape and the first common semiconductor layer (130) is left open, so that the second optical element region (320) is formed between the bridges of the second common semiconductor layer (150) that were etched in a bridge shape.

[0084] Then, the third optical element region, the second optical element region, and the first optical element region are masked, and the remaining region is etched, but the first common semiconductor layer (130) is etched in a bridge shape and the lower semiconductor layer (110) is opened so that the first optical element region (310) is formed between the bridges of the first common semiconductor layer (130) that was etched in a bridge shape.

[0085] In this embodiment, a second electrode (520) is formed on each optical element, and the bridge of the second common semiconductor layer (150) and the bridge of the first common semiconductor layer (130) are formed horizontally on the substrate (10), and a first electrode (510) is formed on the lower semiconductor layer (110) which is open between one side of each bridge and the bridge, so that the first electrode (510) is positioned on the same line on one side of the optical element, making it easy to form the common electrode (512) and allowing the spatial arrangement of the electrodes to be done efficiently.

[0086] It is preferable to form the common electrode (512) after forming a protective film (610) that opens the electrode region over the entire area of ​​the photoelectric device. Additionally, depending on the case, the protective film (610) may be formed before forming the electrode, the electrode may be formed in the open electrode region, and then connected to the common electrode.

[0087] FIG. 2(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element, a first electrode (510) of a third optical element (330) formed on a bridge of a second common semiconductor layer (150), a first electrode (510) of a second optical element (320) formed on a bridge of a first common semiconductor layer (130), and a first electrode (510) of a first optical element (310) formed on a lower semiconductor layer (110). FIG. 2(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 2(a), and FIG. 2(e) is a cross-sectional schematic diagram in the BB' direction.

[0088] FIG. 2(b) is a planar schematic diagram showing the formation of a common electrode (512) for a protective film (610) and a first electrode (510), FIG. 2(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 2(f) is a cross-sectional schematic diagram in the DD' direction.

[0089] In this way, by manufacturing the third optical element part (330) and the second optical element part (320) such that the optical element part is horizontally arranged on the substrate (10) and the optical element layer shares the common semiconductor layer vertically and the first common semiconductor layer (130) horizontally, it is possible to compact the device structure, minimize the problem of color mixing, and improve the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0090] In addition, by manufacturing the common semiconductor layer in a bridge shape and arranging the first electrode (510) on one side to facilitate connection to the common electrode (512), the spatial arrangement of the electrodes is made efficient, thereby enabling the miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0092] According to Embodiment 2 of the present invention as illustrated in FIG. 3, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element (310) for blue light emission, a second light-emitting element (320) for green light emission, and a third light-emitting element (330) for red light emission are formed horizontally on the substrate (10). Similar to Embodiment 1, each light-emitting element is formed by setting an open area through masking and etching. In particular, in this embodiment, each light-emitting element can be formed completely separated from the substrate (10) and can be implemented by an isolation process, etc.

[0093] In this embodiment, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is formed as a rectangle, and naturally, the open shape of the lower semiconductor layer (110) is also formed as a rectangle. In this embodiment, the open areas of the first common semiconductor layer (130), the second common semiconductor layer (150), and the lower semiconductor layer (110) are formed as a rectangle that is extended in the vertical direction with respect to the arrangement direction of the optical element part.

[0094] By forming a second electrode (520) on each optical element and forming a first electrode (510) in an extended area on the second common semiconductor layer (150), the first common semiconductor layer (130), and the lower semiconductor layer (110) which are open in a square shape, the first electrode (510) is positioned on one side of the RGB-pixel so that the formation of the common electrode (512) is easy and the spatial arrangement of the electrodes is efficiently achieved.

[0095] FIG. 3(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element, a first electrode (510) of a third optical element (330) formed on a second common semiconductor layer (150), a first electrode (510) of a second optical element (320) formed on a first common semiconductor layer (130), and a first electrode (510) of a first optical element (310) formed on a lower semiconductor layer (110). FIG. 3(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 3(a), and FIG. 3(e) is a cross-sectional schematic diagram in the BB' direction.

[0096] FIG. 3(b) is a planar schematic diagram showing the formation of a common electrode (512) for a protective film (610) and a first electrode (510), FIG. 3(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 3(f) is a cross-sectional schematic diagram in the DD' direction.

[0097] FIG. 3(f) is formed by adjusting the height so that the first electrode (510) and the second electrode (520) are positioned on the same plane, making it easy to bond with a PCB or CMOS backplane.

[0098] In this way, by manufacturing the third optical element part (330) and the second optical element part (320) by horizontally arranging the optical element part on the substrate (10) and vertically sharing the common semiconductor layer, a common electrode is formed, making it possible to compact the device structure, minimize the problem of color mixing, and improve the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0099] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (510) at one end to facilitate connection to the common electrode (512), the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0101] According to Embodiment 3 of the present invention as illustrated in FIG. 4, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element part (310) for blue light emission, a second light-emitting element part (320) for green light emission, and a third light-emitting element part (330) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element part is formed by setting an open area through masking and etching.

[0102] In particular, in this embodiment, the second optical element part (320) and the third optical element part (330) share the first common semiconductor layer (130) horizontally, and the open areas of the first common semiconductor layer (130), the second common semiconductor layer (150), and the lower semiconductor layer (110) are extended vertically to form a rectangular shape with respect to the arrangement direction of the optical element part.

[0103] In this embodiment, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is formed as a rectangle, and naturally, the open shape of the lower semiconductor layer (110) is also formed as a rectangle.

[0104] By forming a second electrode (520) on each optical element part and forming a first electrode (510) on a second common semiconductor layer (150), a first common semiconductor layer (130), and a lower semiconductor layer (110) on an open area that is extended perpendicularly to the arrangement direction of the optical element part, the first electrode (510) is arranged on one side of the RGB-pixel so that the formation of the common electrode (512) is easy and the spatial arrangement of the electrodes is efficiently achieved.

[0105] FIG. 4(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element, a first electrode (510) of a third optical element (330) formed on a second common semiconductor layer (150), a first electrode (510) of a second optical element (320) formed on a first common semiconductor layer (130), and a first electrode (510) of a first optical element (310) formed on a lower semiconductor layer (110). FIG. 4(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 4(a), and FIG. 4(e) is a cross-sectional schematic diagram in the BB' direction.

[0106] FIG. 4(b) is a planar schematic diagram showing the formation of a common electrode (512) for a protective film (610) and a first electrode (510), FIG. 4(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 4(f) is a cross-sectional schematic diagram in the DD' direction.

[0107] FIG. 4(f) is formed by adjusting the height so that the first electrode (510) and the second electrode (520) are positioned on the same plane, making it easy to bond with a PCB or CMOS backplane.

[0108] In this way, by manufacturing the third optical element part (330) and the second optical element part (320) so that the optical element part is horizontally arranged on the substrate (10) and the optical element layer shares the common semiconductor layer vertically and shares the first common semiconductor layer (130) horizontally, it is possible to make the device structure compact, minimize the problem of color mixing, and improve the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0109] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (510) at one end to facilitate connection to the common electrode (512), the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0111] According to Embodiment 4 of the present invention as illustrated in FIG. 5, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element (310) for blue light emission, a second light-emitting element (320) for green light emission, and a third light-emitting element (330) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element is formed by setting an open area through masking and etching.

[0112] In particular, in this embodiment, the second optical element part (320) and the third optical element part (330) share the first common semiconductor layer (130) horizontally, and the open areas of the first common semiconductor layer (130), the second common semiconductor layer (150), and the lower semiconductor layer (110) are extended in parallel directions with respect to the arrangement direction of the optical element part to form a rectangular shape.

[0113] In this embodiment, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is formed as a rectangle, and naturally, the open shape of the lower semiconductor layer (110) is also formed as a rectangle.

[0114] By forming a second electrode (520) on each optical element part and forming a first electrode (510) on a second common semiconductor layer (150), a first common semiconductor layer (130), and a lower semiconductor layer (110) on an area that is extended and open with respect to the arrangement direction of the optical element part, the first electrode (510) is arranged on one side of the RGB-pixel so that the formation of the common electrode (512) is easy and the spatial arrangement of the electrodes is efficiently achieved.

[0115] FIG. 5(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element, a first electrode (510) of a third optical element (330) formed on a second common semiconductor layer (150), a first electrode (510) of a second optical element (320) formed on a first common semiconductor layer (130), and a first electrode (510) of a first optical element (310) formed on a lower semiconductor layer (110). FIG. 5(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 5(a).

[0116] FIG. 5(b) is a planar schematic diagram showing a common electrode (512) formed for a protective film (610) and a first electrode (510), FIG. 5(d) is a cross-sectional schematic diagram in the BB' direction, and the first electrode (510) and the second electrode (520) are formed by adjusting the height so that their upper ends are positioned on the same plane, thereby facilitating bonding with a PCB or CMOS backplane.

[0117] In this way, by manufacturing the third optical element part (330) and the second optical element part (320) so that the optical element part is horizontally arranged on the substrate (10) and the optical element layer shares the common semiconductor layer vertically and shares the first common semiconductor layer (130) horizontally, it is possible to make the device structure compact, minimize the problem of color mixing, and improve the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0118] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (510) at one end to facilitate connection to the common electrode (512), the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0120] According to Embodiment 5 of the present invention as illustrated in FIG. 6, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element (310) for blue light emission, a second light-emitting element (320) for green light emission, and a third light-emitting element (330) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element is formed by setting an open area through masking and etching.

[0121] In particular, in this embodiment, the second optical element part (320) and the third optical element part (330) share the first common semiconductor layer (130) and the second common semiconductor layer (150) horizontally, and the first common semiconductor layer (130) is shared with the first optical element part (310), and the first electrode (510) is formed on the lower semiconductor that is open parallel to the arrangement direction of the optical element part. In this embodiment, the first electrode (510) becomes the common electrode (512).

[0122] In this embodiment, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is formed as a rectangle, and naturally, the open shape of the lower semiconductor layer (110) is also formed as a rectangle.

[0123] A second electrode (520) is formed on each optical element, and a first electrode (510) is formed on a lower semiconductor that is open parallel to the arrangement direction of the optical element.

[0124] FIG. 6(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element and a first electrode (510) formed on a lower semiconductor layer (110). FIG. 6(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 6(a).

[0125] FIG. 6(b) is a planar schematic diagram showing a first electrode (510) which is a protective film (610) and a common electrode (512), FIG. 6(d) is a cross-sectional schematic diagram in the BB' direction, and the first electrode (510) and the second electrode (520) are formed by adjusting their height so that their upper ends are positioned on the same plane, thereby facilitating bonding with a PCB or CMOS backplane.

[0126] In this way, the optical element part is arranged horizontally on the substrate (10) and the optical element layer shares the common semiconductor layer vertically, and the second optical element part (320) and the third optical element part (330) share the first common semiconductor layer (130) and the second common semiconductor layer (150) horizontally, and the first optical element part (310) shares the first common semiconductor layer (130) horizontally, thereby enabling the compactness of the device structure, minimizing the problem of color mixing, and improving the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0127] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (510) on one side to facilitate connection to the common electrode (512), the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0128] In addition, in this embodiment, the second optical element part (320) and the third optical element part (330) can be formed to operate independently or in conjunction with each other by horizontally sharing the first common semiconductor layer (130) and the second common semiconductor layer (150). This is to improve the uniformity of color distribution and color reproduction by reinforcing the optical element part with low light-emitting efficiency by forming a large area of ​​the optical element part located far from the light-emitting surface, as needed, where the light-emitting efficiency is low. For example, in an embodiment of the present invention, the area of ​​the green light-emitting optical element part with low light-emitting efficiency is formed large to attempt an effect similar to implementing RGGB, RGBBB, or RGGBBB-pixel.

[0129] That is, in the present embodiment 5, each optical element shares a common semiconductor and an active layer horizontally with each other, so that the third optical element (330) emits light with the active layer region limited to the third optical element region, the second optical element (320) emits light with the active layer extended to the third optical element region and the third optical element region and the second optical element region, and the third optical element (330) emits light with the active layer extended to the second optical element (320) and the third optical element region, so that light is emitted in the third optical element region, the second optical element region and the first optical element region.

[0130] As such, the present invention has the advantage of easily expanding the light-emitting region according to a structure in which each optical element shares a common semiconductor and an active layer horizontally.

[0132] According to Embodiment 6 of the present invention as illustrated in FIG. 7, a buffer layer (20) is formed on a substrate (10), and a first light-emitting element (310) for blue light emission, a second light-emitting element (320) for green light emission, and a third light-emitting element (330) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element is formed by setting an area opened by masking and etching.

[0133] In particular, in this embodiment, the second optical element part (320) and the third optical element part (330) share the first common semiconductor layer (130) horizontally, wherein the open area of ​​the second common semiconductor layer (150) forms a rectangular shape extended in a direction parallel to the arrangement direction of the optical element part, and the open area of ​​the first common semiconductor layer (130) forms a rectangular shape extended to both sides of the optical element part in a direction perpendicular to the arrangement direction of the optical element part.

[0134] In this embodiment, the open shape of the second common semiconductor layer (150) and the first common semiconductor layer (130) is formed as a rectangle, and naturally, the open shape of the lower semiconductor layer (110) is also formed as a rectangle.

[0135] A second electrode (520) is formed on each optical element part, a first electrode (510) is formed on a second common semiconductor layer (150) on an open area that extends in a direction parallel to the arrangement direction of the optical element part, and a first electrode (510) is formed in a bridge shape on a first common semiconductor layer (130) on an open area that extends on both sides of the optical element part in a direction perpendicular to the arrangement direction of the optical element part, and the first electrode (510) of the first optical element part (310) on the lower semiconductor is also formed in a bridge shape towards the outer side at a position adjacent to the first optical element part (310).

[0136] Accordingly, the first electrode (510) of the third optical element part (330), the bridge-type first electrode (510) of the second optical element part (320), and the bridge-type first electrode (510) of the first optical element part (310) are arranged such that one end is placed on one side of the element, and a common electrode (512) is formed, thereby allowing the spatial arrangement of the electrodes to be efficiently achieved.

[0137] FIG. 7(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (520) formed in each optical element, a first electrode (510) of a third optical element (330) formed on a second common semiconductor layer (150), a first electrode (510) of a second optical element (320) formed in a bridge shape on a first common semiconductor layer (130), and a first electrode (510) of a first optical element (310) formed in a bridge shape on a lower semiconductor layer (110).

[0138] Figure 7(c) shows a schematic cross-sectional view in the AA' direction of Figure 7(a), and Figure 7(e) shows a schematic cross-sectional view in the BB' direction.

[0139] FIG. 7(b) is a planar schematic diagram showing the formation of a common electrode (512) for a protective film (610) and a first electrode (510), FIG. 7(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 7(f) is a cross-sectional schematic diagram in the DD' direction. FIG. 7(f) is formed by adjusting the height so that the first electrode (510) and the second electrode (520) are positioned on the same plane at their upper ends, thereby facilitating bonding with a PCB or CMOS backplane.

[0140] In this way, by manufacturing the third optical element part (330) and the second optical element part (320) so that the optical element part is horizontally arranged on the substrate (10) and the optical element layer shares the common semiconductor layer vertically and shares the first common semiconductor layer (130) horizontally, it is possible to make the device structure compact, minimize the problem of color mixing, and improve the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0141] In addition, the optical element part is manufactured in a square shape, and the electrodes are arranged in a bridge shape and a square shape so that the common electrode (512) by the first electrode (510) can be implemented on one side, thereby facilitating connection to the common electrode (512), thus promoting efficiency in the spatial arrangement of the electrodes, enabling miniaturization of the RGB-pixel, and making it easy to apply to a large-area, high-resolution full-color display.

[0142] In addition, by implementing a bridge-type first electrode (510), the electrode area is expanded to improve the spreading effect of carriers (e.g., electrons), thereby further improving the luminous efficiency.

[0144] The following shows a photograph of an actual implementation example of a photoelectric device according to an embodiment of the present invention. The materials used in the specific embodiment of the present invention are as follows.

[0146] p-GaN (upper semiconductor layer) / Active layer having a red emission wavelength (third active layer) / n ++ -GaN layer / p ++ -GaN (for the second common semiconductor layer, n-electrode for the red photodetector and p-electrode for the green photodetector) / active layer having a green emission wavelength (second active layer) / n ++ -GaN layer / p ++ -GaN (for the first common semiconductor layer, n-electrode for the green photovoltaic part and p-electrode for the blue photovoltaic part) / active layer having a blue emission wavelength (first active layer) / n-GaN (underlying semiconductor layer) / buffer layer / substrate

[0148] FIG. 8 is a photograph of an actual implementation example of a photovoltaic device according to Example 2, FIG. 8(a) is a schematic diagram showing connecting electrodes formed on the first electrode (510) and the second electrode (520), respectively, for driving the photovoltaic device according to Example 2, and FIG. 8(b) shows a multi-wavelength photovoltaic device actually fabricated according to FIG. 8(a).

[0149] As shown in FIG. 8(b), when a positive voltage is applied to electrode ② of FIG. 8(a) and a negative voltage is applied to electrode ④, red light is emitted (Fig. 8(c)), and when a positive voltage is applied to electrode ③ of FIG. 8(a) and a negative voltage is applied to electrode ④, green light is emitted (Fig. 8(d)). In addition, when a positive voltage is applied to electrode ① of FIG. 8(a) and a negative voltage is applied to electrode ④, blue light is emitted (Fig. 8(e)).

[0150] That is, according to an embodiment of the present invention, by applying four electrodes (electrodes ①, ②, ③, and ④) to independently emit red, green, and blue light, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing a photovoltaic device with excellent electrical characteristics and a photovoltaic device having multiple wavelengths capable of realizing a full-color RGB-pixel.

[0152] FIG. 9 is a photograph of an actual implementation example of a photovoltaic device according to Example 3, FIG. 9(a) is a schematic diagram showing connecting electrodes formed on the first electrode (510) and the second electrode (520), respectively, for driving the photovoltaic device according to Example 3, and FIG. 9(b) shows a multi-wavelength photovoltaic device actually fabricated according to FIG. 9(a).

[0153] As shown in FIG. 9(b), when a positive voltage is applied to electrode ② of FIG. 9(a) and a negative voltage is applied to electrode ④, red light is emitted (Fig. 9(c)), and when a positive voltage is applied to electrode ③ of FIG. 9(a) and a negative voltage is applied to electrode ④, green light is emitted (Fig. 9(d)). In addition, when a positive voltage is applied to electrode ① of FIG. 9(a) and a negative voltage is applied to electrode ④, blue light is emitted (Fig. 9(e)).

[0154] That is, according to an embodiment of the present invention, by applying four electrodes (electrodes ①, ②, ③, and ④) to independently emit red, green, and blue light, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing a photovoltaic device with excellent electrical characteristics and a photovoltaic device having multiple wavelengths capable of realizing a full-color RGB-pixel.

[0156] FIG. 10 is a photograph of an actual implementation example of a photovoltaic device according to Example 4, FIG. 10(a) is a schematic diagram showing connecting electrodes formed on the first electrode (510) and the second electrode (520), respectively, for driving the photovoltaic device according to Example 4, and FIG. 10(b) shows a multi-wavelength photovoltaic device actually fabricated according to FIG. 10(a).

[0157] As shown in FIG. 10(b), when a positive voltage is applied to electrode ② of FIG. 10(a) and a negative voltage is applied to electrode ④, red light is emitted (Fig. 10(c)), and when a positive voltage is applied to electrode ③ of FIG. 10(a) and a negative voltage is applied to electrode ④, green light is emitted (Fig. 10(d)). In addition, when a positive voltage is applied to electrode ① of FIG. 10(a) and a negative voltage is applied to electrode ④, blue light is emitted (Fig. 10(e)).

[0158] That is, according to an embodiment of the present invention, by applying four electrodes (electrodes ①, ②, ③, and ④) to independently emit red, green, and blue light, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing a photovoltaic device with excellent electrical characteristics and a photovoltaic device having multiple wavelengths capable of realizing a full-color RGB-pixel.

[0160] Figure 11 is a photograph of an actual implementation example according to the voltage applied to the electrode in Example 4. As shown in Figure 11(b), when a low voltage (+5 V) is applied to the electrode ③ in Figure 11(a), green light is emitted from the lower side of the electrode ③ (Figure 11(c)), and when a high voltage (+10 V) is applied to the electrode ③, green light and blue light at the bottom of the electrode ③ are emitted simultaneously, and it can be confirmed that cyan light is emitted.

[0161] In addition, it was confirmed that when a low voltage (+5 V) is applied to electrode ② in Fig. 11(a), red light is emitted from the lower side of electrode ② (Fig. 11(e)), and when a high voltage (+10 V) is applied to electrode ②, red light and green light from the lower side of electrode ② are emitted simultaneously, resulting in yellow light emission (Fig. 11(f)).

[0162] That is, Embodiment 4 of the present invention enables monochromatic or mixed-color light emission depending on the magnitude of the voltage applied to the electrodes of each optical element, thereby providing a photoelectric element having multiple wavelengths.

[0164] FIG. 12 is a photograph of an actual implementation example of a photovoltaic device according to Example 5, FIG. 12(a) is a schematic diagram showing connecting electrodes formed on the first electrode (510) and the second electrode (520), respectively, for driving the photovoltaic device according to Example 5, and FIG. 12(b) shows a multi-wavelength photovoltaic device actually fabricated according to FIG. 12(a).

[0165] As shown in FIG. 12(b), when a positive voltage is applied to electrode ② of FIG. 12(a) and a negative voltage is applied to electrode ④, red light is emitted (Fig. 12(c)), and when a positive voltage is applied to electrode ③ of FIG. 12(a) and a negative voltage is applied to electrode ④, green light is emitted (Fig. 12(d)). In addition, when a positive voltage is applied to electrode ① of FIG. 12(a) and a negative voltage is applied to electrode ④, blue light is emitted (Fig. 12(e)).

[0166] That is, according to an embodiment of the present invention, by applying four electrodes (electrodes ①, ②, ③, and ④) to independently emit red, green, and blue light, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing a photovoltaic device with excellent electrical characteristics and a photovoltaic device having multiple wavelengths capable of realizing a full-color RGB-pixel.

[0167] In addition, in this embodiment 5, the third light element part (330) of red light and the second light element part (320) of green light share the second common semiconductor layer (150) and the first semiconductor layer in the horizontal direction, and the first light element part (310) of blue light shares the first common semiconductor layer (130) and the second common semiconductor layer (150) with other light element parts in the horizontal direction. That is, each optical element shares a common semiconductor layer and an active layer horizontally with each other, so that the third optical element (330) emits light with the active layer region limited to the third optical element region, the second optical element (320) emits light with the active layer extended to the third optical element region and the third optical element region and the second optical element region, and the first optical element (310) emits light with the active layer extended to the second optical element (320) and the third optical element region, and the third optical element region, the second optical element region and the first optical element region all emit light.

[0168] As such, the present invention has the advantage of facilitating the expansion of the light-emitting region according to a structure in which each optical element shares a common semiconductor and an active layer horizontally. Additionally, if necessary, the area of ​​the optical element located at a distance from the light-emitting surface or with low light-emitting efficiency is formed wider to reinforce the optical element with low light-emitting efficiency, thereby improving the uniformity of color distribution and color reproduction.

[0170] Thus, the photoelectric device according to the embodiment of the present invention designs the shape and structure of the photoelectric device part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0171] In addition, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming a plurality of optical element layers including an active layer and a common semiconductor layer, and forming optical element parts horizontally arranged on a substrate through a selective etching and opening process.

[0172] In addition, by manufacturing the optical device part such that the optical device layer formed in the middle shares a common semiconductor layer with the optical device layers formed on the top and bottom, the device structure can be made compact, and since RGB pixels can be implemented in the horizontal direction on a single substrate, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing an optical device with excellent electrical characteristics.

[0173] In addition, a photovoltaic device according to one embodiment of the present invention provides a structure that can implement a common electrode by connecting the first electrodes to each other, or can adjust the area of ​​the first electrode to improve the electron spreading effect and thereby provide a photovoltaic device that improves luminous efficiency.

[0174] In addition, due to the selective sharing structure of the common semiconductor layer in the optical device section, each optical device section can operate independently or in conjunction with one another, and as needed, the operation of a single or multiple optical device sections according to the emission wavelength can be easily implemented, thereby facilitating the control of the emission area and improving the uniformity of color distribution and color reproduction by reinforcing optical device sections with low emission efficiency.

[0175] In addition, the light-emitting area of ​​each optical element can be easily expanded according to a structure in which each optical element shares a portion of the common semiconductor layer and the active layer horizontally. Explanation of the symbols

[0176] 10 : Material 20 : Buffer layer 110: Lower semiconductor layer 120: First active layer 130: First common semiconductor layer 140: Second active layer 150: Second common semiconductor layer 160: Third active layer 170: Upper semiconductor layer 210: First optical device layer 220 : Second optical layer 230 : Third optical layer 310: 1st optical element section 320: 2nd optical element section 330: Third optoelectronic element 410: Current spreading layer 510: First electrode 512: Common electrode 520 : Second electrode 610 : Protective layer

Claims

Claim 1 A first optical element layer implemented by forming a lower semiconductor layer, a first active layer, and a first common semiconductor layer on a substrate; a second optical element layer implemented by forming a second active layer and a second common semiconductor layer on the first common semiconductor layer; and a third optical element layer implemented by forming a third active layer and an upper semiconductor layer on the second common semiconductor layer; and a first optical element part, a second optical element part, and a third optical element part having the same or different emission wavelengths, formed horizontally by sequentially opening a portion of the second common semiconductor layer, the first common semiconductor layer, and the lower semiconductor layer. and a first electrode formed on the lower semiconductor layer, and a second electrode formed respectively on the first optical element part, the second optical element part, and the third optical element part, comprising or including a first electrode formed in a region on the open lower semiconductor layer, the first common semiconductor layer, and the second common semiconductor layer, and a second electrode formed respectively on the first optical element part, the second optical element part, and the third optical element part;The first electrode is positioned outside the region between the front second electrode and the rear second electrode in the arrangement direction of the optical element when counted sequentially from the front second electrode to the rear second electrode along the arrangement direction of the optical element; the second electrode is not positioned in the region between two adjacent optical elements forming a step along the arrangement direction of the optical element; when counted sequentially from the front second electrode to the rear second electrode along the arrangement direction of the optical element, it faces the first electrode in a straight line located around the front or rear second electrode outside the region between the front second electrode and the rear second electrode in the arrangement direction of the optical element, or faces the first electrode in a straight line every time the second electrode appears in a direction perpendicular to the arrangement direction of the optical element; and the upper semiconductor layer located below the second electrode in the third optical element is a second common semiconductor layer located below the second electrode in the second optical element and the first A first common semiconductor layer located below a second electrode in the optical device part has a greater thickness than the first common semiconductor layer, and each of the first common semiconductor layer and the second common semiconductor layer is composed of at least one tunnel junction layer, and the tunnel junction layer, at the upper and lower portions of the tunnel junction layer, n; ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++ -AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n ++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ - A photovoltaic device having multiple wavelengths, wherein a p / n junction is formed among the AlGaAs layers, and the first active layer or the third active layer is surrounded by an even number of layers having the same conductivity type between the lower semiconductor layer and the first common semiconductor layer or the second common semiconductor layer and the upper semiconductor layer. Claim 2 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, the first optical element part, the second optical element part, and the third optical element part are formed to operate independently of each other. Claim 3 A photoelectric device having multiple wavelengths according to claim 1, wherein the second optical element part and the third optical element part are formed to operate independently or in conjunction with each other by sharing one or more of the first common semiconductor layer and the second common semiconductor layer. Claim 4 In claim 1, the second optical element layer is characterized by being formed in multiple numbers by repeatedly forming active layers between common semiconductor layers, thus forming a multi-wavelength optoelectronic device. Claim 5 A photoelectric device having multiple wavelengths according to claim 1, wherein the second common semiconductor layer and the first common semiconductor layer are characterized in that the open shape is formed in any one of a polygonal, circular, elliptical, and bridge shape. Claim 6 delete Claim 7 A multi-wavelength photovoltaic device according to claim 1, characterized in that a protective film with an open electrode region is formed over the entire region of the photovoltaic device. Claim 8 A photoelectric device having multiple wavelengths, characterized in that, in claim 7, a first electrode formed on the lower semiconductor layer and a first electrode formed in a region on the first common semiconductor layer and the second common semiconductor layer are connected to each other to form a common electrode. Claim 9 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, the first electrode and the second electrode have their heights adjusted so that their upper ends are positioned on the same plane. Claim 10 A photoelectric device having multiple wavelengths according to claim 1, wherein the above-mentioned material is one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass. Claim 11 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, a buffer layer is further formed between the above-mentioned substrate and the above-mentioned lower semiconductor layer. Claim 12 In claim 11, the buffer layer is characterized by being formed as a single layer or multiple layers by combining two or more of the following materials: GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or by mixing two or more materials to form a single layer or multiple layers by combining two or more of the same. Claim 13 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, the lower semiconductor layer is an n-type semiconductor layer or a p-type semiconductor layer, and the upper semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer. Claim 14 In claim 13, the n-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb. The p-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of the following materials, or is formed as a single layer or a plurality of layers combining two or more of the same materials by mixing two or more materials, and the p-type semiconductor layer is formed as p-GaN, p-InGaN, A photoelectric device having multiple wavelengths, characterized by being formed as a single layer or a plurality of layers combining two or more of any one of p-AlGaN, p-InAlGaN, p-InAlGaP, p-GaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb, or formed as a single layer or a plurality of layers combining two or more of the same by mixing two or more of the same. Claim 15 The photoelectric device having multiple wavelengths according to claim 1, wherein the first active layer, the second active layer, and the third active layer are formed by repeatedly depositing a plurality of layers that are combinations of two or more of GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb. Claim 16 delete Claim 17 delete Claim 18 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, a diffusion blocking layer or an electron blocking layer is formed between a p-type semiconductor layer and a first active layer, between a p-type semiconductor layer and a second active layer, and if the upper semiconductor layer is a p-type semiconductor layer, between them. Claim 19 A photoelectric device having multiple wavelengths, characterized in that, in claim 1, the first electrode is formed in any one of the shapes of a polygon, a circle, an ellipse, and a bridge. Claim 20 A photoelectric device having multiple wavelengths according to claim 19, characterized in that the first electrodes are arranged on the same horizontal line and connected to each other to form a common electrode.

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