Method for Manufacturing a Photoelectronic Device with Multi-wavelengths and the Photoelectronic Device

Abstract

The present invention provides a method for manufacturing a photoelectric device having multiple wavelengths and the photoelectric device itself, characterized by forming a plurality of photoelectric device layers having different emission wavelengths on a substrate and forming a buffer layer between the photoelectric device layers, wherein the photoelectric device layers are formed to include a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, exposing the second type semiconductor layer above each photoelectric device layer and opening the first type semiconductor layer below each photoelectric device layer to form photoelectric device portions having different emission wavelengths in a horizontal direction relative to the substrate, forming a first electrode in a region on the opened first type semiconductor layer, and forming a second electrode on each photoelectric device portion.

Description

Technology Field

[0001] The present invention relates to a method for manufacturing a photovoltaic device and the photovoltaic device said, wherein the method involves forming a horizontally arranged photovoltaic device portion by applying a semiconductor layer having multiple wavelengths, thereby manufacturing a photovoltaic device having multiple wavelengths with excellent electrical characteristics and the photovoltaic device said. Background Technology

[0002] With the increasing integration and performance of electrical and electronic devices, various attempts are being made regarding manufacturing methods for micro-optical devices such as micro light-emitting diodes and nano light-emitting diodes.

[0003] Recently, high-quality thin film growth technology and device processing technology have improved, making it possible to fabricate optoelectronic devices of various sizes. In particular, research on full-color displays using red (R), green (G), and blue (B) micro light-emitting diodes of 100 µm or less is active.

[0004] Conventional methods for implementing full-color displays utilize blue micro-light-emitting diodes and quantum dots that emit green or red light on the blue micro-light-emitting diodes to realize RGB pixels; however, commercialization is constrained due to issues such as problems with controlling the particle size of quantum dots, reliability issues, and limitations in mass production.

[0005] In addition, green and red micro-LEDs have lower luminous efficiency compared to blue micro-LEDs, which reduces overall efficiency and makes it difficult to ensure uniformity in color distribution and color reproduction.

[0006] In addition, in a structure where conventional red, green, and blue micro light-emitting diodes are vertically stacked, there are issues with color mixing during light emission between the stacked RGB elements, as well as problems with high driving voltage and leakage current between the vertically stacked RGB elements.

[0007] Furthermore, conventionally, since there must be an area occupied by each micro light-emitting diode and the n-electrode and p-electrode for driving it, if a full-color pixel is constructed based on micro light-emitting diodes having independent n-electrodes and p-electrodes, it is not easy to fabricate the ultra-small light-emitting diodes required for realizing large-area, ultra-high-resolution displays. The problem to be solved

[0008] The present invention was derived from the above necessity and aims to provide a method for manufacturing a photovoltaic device having multiple wavelengths with excellent electrical characteristics and the photovoltaic device by forming a horizontally arranged optical device portion by applying a semiconductor layer having multiple wavelengths. means of solving the problem

[0009] The present invention, for achieving the above objective, has as its technical gist a method for manufacturing a photoelectric device having multiple wavelengths, characterized by forming a plurality of photoelectric device layers having different emission wavelengths on a substrate, forming a buffer layer between the photoelectric device layers, wherein the photoelectric device layers are formed to include a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, exposing the second type semiconductor layer above each photoelectric device layer and opening the first type semiconductor layer below each photoelectric device layer, thereby forming photoelectric device portions having different emission wavelengths in a horizontal direction relative to the substrate, forming a first electrode in a region on the opened first type semiconductor layer, and forming a second electrode on each photoelectric device portion.

[0010] In addition, the present invention provides another technical feature of a photoelectric device having multiple wavelengths, wherein a plurality of photoelectric device layers having different emission wavelengths are formed on a substrate, a buffer layer is formed between the photoelectric device layers, the photoelectric device layers are formed to include a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, the second type semiconductor layer is exposed above each photoelectric device layer, and the first type semiconductor layer is opened below each photoelectric device layer, so that photoelectric device portions having different emission wavelengths are formed in a horizontal direction relative to the substrate, a first electrode is formed in a region on the opened first type semiconductor layer, and a second electrode is formed on each photoelectric device portion.

[0011] In addition, the above optical elements may be formed to operate independently of each other.

[0012] In addition, the optical element may be formed to horizontally share one or more of the first type semiconductor layers so as to operate independently or in conjunction with each other.

[0013] In addition, the first type semiconductor layer may have an open shape formed in any one of polygonal, circular, elliptical, and bridge shapes, and the first electrode formed on the first type semiconductor layer may be arranged on the same horizontal line and connected to each other to form a common electrode.

[0014] In addition, a protective film with an open electrode region can be formed over the entire area of ​​the photoelectric device before or after the formation of the first electrode and the second electrode, and after the formation of the protective film, a common electrode can be formed by connecting the first electrode formed on the first type semiconductor layer.

[0015] In addition, the first electrode and the second electrode can be formed by adjusting their height so that their upper ends are located on the same plane.

[0016] In addition, the above material may be any one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass.

[0017] Additionally, a buffer layer may be further formed between the above-mentioned substrate and the lowest first-type semiconductor layer, and the buffer layer may be formed as a single layer of any one of GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or as a plurality of layers by combining two or more of these materials, or as a single layer by mixing two or more materials, or as a plurality of layers by combining two or more of these materials.

[0018] In addition, the first type semiconductor layer may be an n-type semiconductor layer or a p-type semiconductor layer, and the second type semiconductor layer may be a p-type semiconductor layer or an n-type semiconductor layer.

[0019] Here, the n-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb, n-AlGaInSb, and n-AlGaInSb, or is formed as a single layer or a plurality of layers combining two or more of these materials by mixing two or more materials, and the p-type semiconductor layer is formed as p-GaN, p-InGaN, p-AlGaN, Any one of p-InAlGaN, n-InAlGaP, p-GaAs, p-AlGaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaP, p-GaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, p-AlGaInSb, or p-AlGaInSb can be formed as a single layer or as multiple layers combining two or more of these materials, or as a single layer or as multiple layers combining two or more of these materials by mixing two or more of them.

[0020] In addition, the active layer may be formed by repeatedly depositing multiple layers combining two or more of the following: GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb.

[0021] In addition, the first type semiconductor layer or the second type semiconductor layer is each n ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++ -AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n ++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ - It may be any one or more of the AlGaAs layers or a p / n junction layer.

[0022] In addition, if the first type semiconductor layer is formed as a p-type semiconductor layer or the second type semiconductor layer is formed as a p-type semiconductor layer, a diffusion barrier layer or an electron blocking layer may be formed between each active layer and the p-type semiconductor layer.

[0023] In addition, the first electrode may be formed in any one of the shapes of a polygon, a circle, an ellipse, and a bridge, and the first electrode may be arranged on the same horizontal line and connected to each other to form a common electrode. Effects of the invention

[0024] Thus, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by forming a plurality of optical element layers vertically, including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and forming a buffer layer between them in an epitaxial structure, and forming an optical element portion horizontally arranged on a substrate by a selective etching and opening process.

[0025] In addition, by manufacturing the optical device part so that the first type semiconductor layer of the optical device layer formed in the middle is partially shared, the formation of a common electrode is easy, making it possible to compact the device structure, and since RGB-pixels can be implemented in the horizontal direction on a single substrate, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing an optical device with excellent electrical characteristics.

[0026] In addition, a photoelectric device according to one embodiment of the present invention provides a structure that can implement a common electrode by connecting the first electrodes to each other, or can adjust the area of ​​the first electrode to improve electron spreading and thereby provide a photoelectric device that improves luminous efficiency.

[0027] In addition, due to the selective sharing structure of some first-type semiconductor layers in the optical device section, each optical device section can operate independently or in conjunction with one another, and as needed, the operation of a single or multiple optical device sections according to the emission wavelength can be easily implemented, thereby facilitating the control of the emission area and reinforcing the optical device section with low emission efficiency to improve the uniformity of color distribution and color reproduction. Brief explanation of the drawing

[0028] FIG. 1 - Schematic diagram of a method for manufacturing a photoelectric device according to an embodiment of the present invention. FIGS. 2 to 6 - Schematic diagrams of photoelectric devices according to various embodiments of the present invention. Specific details for implementing the invention

[0029] The present invention designs the shape and structure of the optical element part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0030] In particular, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming a plurality of optical element layers including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and forming an optical element portion horizontally arranged on a substrate by a selective etching and opening process.

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. FIG. 1 is a schematic diagram of a method for manufacturing a photoelectric device according to an embodiment of the present invention, and FIGS. 2 to 6 are schematic diagrams of photoelectric devices according to various embodiments of the present invention.

[0032] As illustrated in FIG. 1, a method for manufacturing a photoelectric device having multiple wavelengths according to an embodiment of the present invention comprises forming a plurality of photoelectric device layers (150), (250), (350) having different emission wavelengths on a substrate (10), forming buffer layers (210), (310) between the photoelectric device layers (150), (250), (350), wherein the photoelectric device layers (150), (250), (350) are formed to include a first type semiconductor layer (120), (220), (320), an active layer (130), (230), (330), and a second type semiconductor layer (140), (240), (340) from the substrate (10), and the second type semiconductor layer (140), (240), (340) is exposed above each photoelectric device layer (150), (250), (350), and each The first type semiconductor layer (120), (220), (320) is opened below the optical element layer (150), (250), (350) to form optical element parts (410), (420), (430) having different emission wavelengths in a horizontal direction relative to the substrate (10), a first electrode (610) is formed in a region on the opened first type semiconductor layer (120), (220), (320), and a second electrode (620) is formed on each optical element part (410), (420), (430).

[0033] The photoelectric device having multiple wavelengths manufactured by this is formed such that a plurality of photoelectric device layers (150), (250), (350) having different emission wavelengths are formed on a substrate (10), and a buffer layer (210), (310) is formed between the photoelectric device layers (150), (250), (350). The photoelectric device layers (150), (250), (350) are formed to include a first type semiconductor layer (120), (220), (320), an active layer (130), (230), (330), and a second type semiconductor layer (140), (240), (340) from the substrate (10), and the second type semiconductor layer (140), (240), (340) is exposed above each photoelectric device layer (150), (250), (350). The first type semiconductor layer (120), (220), (320) is opened below the optical element layer (150), (250), (350) so that optical element parts (410), (420), (430) having different emission wavelengths are formed in a horizontal direction relative to the substrate (10), and a first electrode (610) is formed in a region on the opened first type semiconductor layer (120), (220), (320), and a second electrode (620) is formed on each optical element part (410), (420), (430).

[0034] The light-emitting device according to the present invention can be applied to light-emitting diodes (LEDs), micro-LEDs, nano-LEDs, ultraviolet LEDs, infrared LEDs, laser diodes (LDs), photodiodes (PDs), avalanche photodiodes (APDs), etc. by using III-V, II-VI, and IV-IV compound semiconductors, or compound semiconductors mixed therewith.

[0035] Thus, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by vertically forming a plurality of optical element layers including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and forming an optical element portion horizontally arranged on a substrate through a selective etching and opening process.

[0036] According to an embodiment of the present invention, first, a plurality of optical element layers (150), (250), (350) are formed vertically on a substrate (10), each including a first type semiconductor layer (120), (220), (320), an active layer (130), (230), (330), and a second type semiconductor layer (140), (240), (340). A buffer layer (210), (310) is formed between each optical element layer (150), (250), (350) to form an epitaxial element layer overall.

[0037] In one embodiment of the present invention, the optical element layer (150), (250), (350) and the buffer layer (110), (210), (310) are included, wherein the first type semiconductor layer (120), (220), (320) is an n-type semiconductor layer and the second type semiconductor layer (140), (240), (340) is a p-type semiconductor layer, so that the second type semiconductor layer (140), (240), (340) is a p-type semiconductor layer on top of the active layer (130), (230), (330), and the first type semiconductor layer (120), (220), (320) is an n-type semiconductor layer formed on the bottom of the active layer (130), (230), (330) (Fig. 1(a)).

[0038] For example, a buffer layer (110) is formed on a substrate (10), a first optical element layer (150) including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer and a buffer layer (210) are formed, a second optical element layer (250) including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer and a buffer layer (310) are formed, and a third optical element layer (350) including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer is formed.

[0039] Here, the plurality of optical element layers have different emission wavelengths, and the first optical element layer (150) is formed as an active layer having a blue emission wavelength, the second optical element layer (250) as a green emission wavelength, and the third optical element layer (350) as a red emission wavelength.

[0040] A substrate (10) according to one embodiment of the present invention includes a substrate used in a semiconductor device manufacturing process or a thin film formed on the substrate (10), and uses any one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass.

[0041] As described above, the first type semiconductor layer (120), (220), (320) may be an n-type semiconductor layer or a p-type semiconductor layer, and the second type semiconductor layer (140), (240), (340) may be a p-type semiconductor layer or an n-type semiconductor layer.

[0042] Here, the n-type semiconductor layer may be formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb. Alternatively, it may be formed as a single layer or a plurality of layers combining two or more of the following materials by mixing two or more materials.

[0043] Additionally, the p-type semiconductor layer may be formed as a single layer or a plurality of layers combining two or more of any one of the following materials: p-GaN, p-InGaN, p-AlGaN, p-InAlGaN, p-InAlGaP, p-GaAs, p-AlGaAs, n-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb. Alternatively, it may be formed as a single layer or a plurality of layers combining two or more of the same by mixing two or more materials.

[0044] Additionally, a buffer layer (110) may be further formed between the substrate (10) and the first type semiconductor layer (120). The buffer layer (110) is intended to buffer lattice mismatch between the substrate (10) and the semiconductor layer and may be formed optionally. Additionally, buffer layers (210) and (310) may be formed between each optical element layer.

[0045] According to one embodiment of the present invention, the buffer layers (110), (210), and (310) are formed as a single layer or as multiple layers by combining two or more of the materials selected from GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or are used by mixing two or more materials to form a single layer or as multiple layers by combining two or more of the materials. The buffer layers (110), (210), and (310) may be a single layer depending on the type of substrate (10) or the first type semiconductor layer (120), (220), and (320), and the materials may be stacked in multiple layers. The above buffer layers (110), (210), and (310) can be formed by known physical or chemical deposition methods.

[0046] In addition, the active layers (130), (230), and (330) according to one embodiment of the present invention may be formed by repeatedly depositing a plurality of layers combining two or more of GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb. By combining these materials, the active layers (130), (230), and (330) may be formed such that they have the same emission wavelength, or that any one or part of the active layers (130), (230), and (330) have a different emission wavelength from the remaining active layers.

[0047] According to one embodiment of the present invention, to implement an optical device having red (R), green (G), and blue (B) emission wavelengths, an active layer having at least three different emission wavelengths is formed. Generally, the band gap can be controlled by controlling the elements doped in the material. Generally, for red, a non-nitride material such as GaAs is used, and for green, a GaP series or a non-nitride material or a nitride material can be used by controlling doping elements such as Al and In.

[0048] In one embodiment of the present invention, a buffer layer (110) is formed on a substrate (10), and above it, a first active layer (130) having a blue light emission wavelength, a second active layer (230) having a green light emission wavelength, and a third active layer (330) having a red light emission wavelength are formed in that order. In a device having such a structure, the light emission direction is the direction toward the substrate, and a CMOS backplane, which is a driving substrate for the light-emitting device, is located in the opposite direction.

[0049] In addition, according to one embodiment of the present invention, the first type semiconductor layer (120), (220), (320) or the second type semiconductor layer (140), (240), (340) is formed as a high-concentration p-type semiconductor layer or a high-concentration n-type semiconductor layer, or is formed by joining the same. In one embodiment of the present invention, the doping concentration of the first type semiconductor layer (120), (220), (320) or the second type semiconductor layer (140), (240), (340) is 1 × 10⁻¹⁰, respectively. 18 ~ 1 × 10 21 cm -3 It is formed to that extent.

[0050] According to one embodiment of the present invention, the first type semiconductor layer (120), (220), (320) or the second type semiconductor layer (140), (240), (340) are each n ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++-AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n ++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ - It may be any one or more of the AlGaAs layers or a p / n junction layer.

[0051] In the present invention, the first type semiconductor layer (120), (220), (320) or the second type semiconductor layer (140), (240), (340) is formed as a high-concentration n-type (n++) semiconductor layer and a high-concentration p-type (p++) semiconductor layer to increase electron-hole recombination in the active layer (130), (230), (330), and is also implemented as a high-concentration n-type semiconductor layer or p-type semiconductor layer to perform the role of an electrode layer of the optical device part (410), (420), (430), so the shape and structure of the first type semiconductor layer (120), (220), (320) or the second type semiconductor layer (140), (240), (340) can be designed by considering the arrangement of the electrodes.

[0052] In addition, according to one embodiment of the present invention, when the first type semiconductor layer (120), (220), (320) is formed as a p-type semiconductor layer, or when the second type semiconductor layer (140), (240), (340) is formed as a p-type semiconductor layer, a diffusion barrier layer or an electron blocking layer is formed between each active layer (130), (230), (330) and the p-type semiconductor layer, respectively, so as to improve the electron-hole coupling efficiency. Here, the diffusion barrier layer or the electron blocking layer may use one or more of the above-mentioned p-type semiconductor layer materials.

[0053] For example, in one embodiment of the present invention, a buffer layer (110) and an n-type semiconductor layer (n ++ -GaN layer), first active layer (blue light-emitting material) (130), p-type semiconductor layer (p ++- A first optical device layer (150) is implemented by forming a GaN layer, and a buffer layer (210) is formed, and an n-type semiconductor layer (n ++ -GaN layer), second active layer (green light-emitting material) (230), p-type semiconductor layer (p ++ - A second optical device layer (250) is implemented by forming a GaN layer, and a buffer layer (310) is formed, and an n-type semiconductor layer (n ++ -GaN layer), third active layer (red light-emitting material) (330), p-type semiconductor layer (p ++ - A third optical element layer (350) is realized by forming a GaN layer. In this embodiment, the p-type and n-type may be formed interchangeably, and depending on the type of common electrode (n-type or p-type), the n-type and p-type are selected and formed in each layer.

[0054] Here, as described above, the photonic element layer may be formed in multiple layers, which allows for the repeated formation of the active layer of the photonic element part with low luminous efficiency as needed, or for improving the uniformity of color distribution and color reproduction due to color mixing.

[0055] Accordingly, the optical element layers formed according to an embodiment of the present invention have buffer layers (210) and (310) in between, and the first type semiconductor layers (120), (220), and (320) each act as n-type semiconductor layers or p-type semiconductor layers to the active layers (130), (230), and (330), respectively, to provide electrons or holes to the active layers (130), (230), and (330), and can also perform the role of an electrode layer by being implemented as a high-concentration n-type semiconductor layer or p-type semiconductor layer. In particular, according to an embodiment of the present invention, the n-type semiconductor layer, which is the first type semiconductor layer formed below the active layers (130), (230), and (330), can perform the role of an n-type electrode layer.

[0056] Each of these optical device layers includes a first-type semiconductor layer and a second-type semiconductor layer, and by appropriately forming and arranging the structure of the optical device part and the structure of the electrode implemented thereby, it is possible to compact the overall device structure, thereby enabling the manufacture of micro or nano light-emitting diodes suitable for large-area, high-resolution displays.

[0058] Then, a second type semiconductor layer (140), (240), (340) is exposed above each optical element layer, and a first type semiconductor layer (120), (220), (320) is opened below each optical element layer, thereby forming an optical element section having different emission wavelengths in a horizontal direction relative to the substrate (10) (Fig. 1(b), (c), (d), (e)). This involves sequentially opening a portion of each semiconductor layer to form a first optical element section (410), a second optical element section (420), and a third optical element section (430) having different emission wavelengths horizontally on the substrate (10).

[0059] First, to form a third optical element part (430), a portion of the second type semiconductor layer (340) of the third optical element layer (350) is exposed, and the first type semiconductor layer (320) of the third optical element layer (350) is opened to form a third optical element part (430) implemented with the second type semiconductor layer (340), a third active layer (330) having a red emission wavelength, and the first type semiconductor layer (320) (Fig. 1(b), (c)). This allows the third optical element part (430) to be implemented by masking the third optical element part area and etching the remaining area so that a portion of the first type semiconductor layer (320) is opened. If necessary, the masking area can be adjusted to control the open area of ​​the first type semiconductor layer. In addition, to form a structurally stable third optical element part (430), a buffer layer (310) and a portion of the second type semiconductor layer (240) of the second optical element layer (250) can be etched below the open first type semiconductor layer (320) to form the second type semiconductor layer (240) of the second optical element layer (250) with a portion of the second type semiconductor layer (240) open.

[0060] Then, with the second type semiconductor layer (240) of the second optical element layer (250) open, a portion of the second type semiconductor layer (240) of the second optical element layer (250) is exposed, and the first type semiconductor layer (220) of the second optical element layer (250) is opened to form a second optical element part (420) implemented with the second type semiconductor layer (240), a second active layer (230) having a green emission wavelength, and the first type semiconductor layer (220) (Fig. 1(d), (e)). This allows the second optical element part (420) to be implemented by masking the third optical element part area and the second optical element part area, and etching the remaining area so that a portion of the first type semiconductor layer (220) is opened. If necessary, the open area of ​​the first type semiconductor layer can be controlled by adjusting the masking area. In addition, to form a structurally stable second optical element part (420), a buffer layer (210) and a portion of the second type semiconductor layer (140) of the first optical element layer (150) can be etched below the open first type semiconductor layer (220) to form the second type semiconductor layer (140) of the first optical element layer (150) with a portion of it open.

[0061] Then, with the second type semiconductor layer (140) of the first optical element layer (150) open, a portion of the second type semiconductor layer (140) of the first optical element layer (150) is exposed, and the first type semiconductor layer (120) of the first optical element layer (150) is opened to form a first optical element part (410) implemented with the second type semiconductor layer (140), a first active layer (130) having a blue emission wavelength, and the first type semiconductor layer (120) (Fig. 1(f)). This allows the first optical element part (410) to be implemented by masking the third optical element part area, the second optical element part area, and the first optical element part area, and etching the remaining area so that a portion of the first type semiconductor layer (120) is opened. If necessary, the open area of ​​the first type semiconductor layer can be controlled by adjusting the masking area.

[0062] Here, the number of photoluminescent elements in the horizontal direction can be controlled by adjusting the masking area and the open area of ​​each semiconductor layer as needed. That is, light emission can be enabled in combinations such as RRGB, RRGGB, and RGGB as needed, thereby reinforcing photoluminescent elements with low luminous efficiency depending on the material itself or the height and position of the element to ensure uniformity of color distribution and color reproduction.

[0063] At this time, if necessary, the first optical element part (410), the second optical element part (420), and the third optical element part (430) can be completely separated except for the substrate (10), and this can be implemented by an isolation process, etc. This allows each optical element part to operate independently of each other, and the optical element parts are formed horizontally on the substrate (10), so that RGB-pixels can be implemented through independent operation without color mixing between them.

[0064] Additionally, the second optical element part (420) and the third optical element part (430) formed horizontally on the substrate (10) may be formed to operate independently or in conjunction with each other by sharing the first type semiconductor layer (220) horizontally. Depending on the needs, various optical element parts that emit light simultaneously, such as RG, RGB, and GB, can be attempted.

[0065] Additionally, a current spreading layer (510) may be optionally formed on each optical element or an activation process may be optionally performed to further increase the luminous efficiency (Fig. 1(g)). The activation process may be performed by heat treatment in the range of 200°C to 900°C for 30 seconds to 2 hours and may be performed in one or more atmospheres of Air, O2, N2, Ar, or a vacuum atmosphere. Additionally, the current spreading layer (510) may be formed by heat treatment in the range of 200°C to 900°C for 30 seconds to 2 hours before forming the current spreading layer (510), and the current spreading layer (510) may be formed and the heat treatment process repeated after the activation process is performed in one or more atmospheres of Air, O2, N2, Ar, or a vacuum atmosphere.

[0066] Then, a first electrode (610) is formed in a region on the open first type semiconductor layer (120), (220), (320), and a second electrode (620) is formed on each optical element part (Fig. 1(h)).

[0067] Additionally, by adjusting the degree of open area of ​​the first type semiconductor layer (220), (320) to form a first electrode (610) on top thereof, the first type semiconductor layer (220), (320) can each perform the role of the first electrode (610) (e.g., n-electrode) of the third optical element part (430) and the second optical element part (420), respectively. Here, the first type semiconductor layer (220), (320) that is bonded to the first electrode (610) is formed as a highly doped n++ semiconductor layer (e.g., n++-GaN layer) so that it can perform the role of an electrode layer. Furthermore, the first type semiconductor layer (120) of the first optical element part (410) can also be highly doped to form the first electrode (610) and perform the role of an electrode layer.

[0068] In this embodiment of the present invention, the first type semiconductor layer (120), (220), (320) serves to provide electrons from the lower part of the active layer (130), (230), (330) as described above, and also serves as an electrode layer of the optical device by forming a first electrode (610) in an open region that is doped at a high concentration.

[0069] Additionally, the first type semiconductor layer (120), (220), and (320) may be formed with an open shape that is polygonal (see FIG. 3, 4, 5, and 6), bridge-shaped (see FIG. 2), circular, or elliptical, and a second electrode (620) is formed on each optical device area, and a first electrode (610) is formed in the open area to realize the optical device.

[0070] Here, the first electrode (610) formed on the first type semiconductor layer (120), (220), (320) of each optical element may be arranged on the same line and connected to each other to form a common electrode.

[0071] Additionally, the first electrode (610) may be formed in any one of the shapes of a polygon, a circle, an ellipse, and a bridge shape depending on the shape and structure of the optical element part, and a common electrode may be formed by designing the ends of the first electrode (610) to be placed on the same line.

[0072] Additionally, after forming the first electrode (610) and the second electrode (620), a passivation (710) with an open electrode area may be formed over the entire area of ​​the photovoltaic device, or a passivation (710) may be formed over the entire area of ​​the photovoltaic device first, and then a part of the passivation (710) may be opened and the first electrode (610) and the second electrode (620) may be formed in the opened part area (Fig. 1(i)).

[0073] Here, the protective film (710) is SiO2, SiO x , SiN xOne or more of the following materials are used: Si3N4, Al2O3, AlN, BN, TaN, TiN, ZrN, WN, VN, NbN, YN, and HfN, and the thickness of the protective film (710) is formed in the range of 25 nm to 2 µm.

[0074] After the formation of the protective film (710), the first electrode (610), and the second electrode (620), the first electrode (610) formed in one region on the first type semiconductor layer (120), (220), (320) can be connected to form a common electrode (Fig. 1(j)). As described above, the first electrode (610) may be designed as a bridge type to facilitate connection to the common electrode.

[0075] In addition, the first electrode (610) and the second electrode (620) can be formed by adjusting their height so that their upper ends are positioned on the same plane. This facilitates the bonding of the photoelectric device with a PCB or CMOS backplane.

[0076] Thus, the photoelectric device according to one embodiment of the present invention designs the shape and structure of the photoelectric device part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0077] Hereinafter, various embodiments of the present invention will be described in more detail with reference to the attached drawings.

[0078] According to Embodiment 1 of the present invention as illustrated in FIG. 2, a buffer layer (110) is formed on a substrate (10), and a first light-emitting element (410) for blue light emission, a second light-emitting element (420) for green light emission, and a third light-emitting element (430) for red light emission are formed horizontally on the substrate (10).

[0079] In the epitaxial structure of the vertically stacked buffer layer and optical element layer, the third optical element portion (430) is formed by masking the third optical element portion region and etching the remaining region so that a portion of the first type semiconductor layer (320) of the third optical element layer (350) is opened.

[0080] Then, the third optical element region and the second optical element region are masked, and the remaining region is etched, but the first type semiconductor layer (320) of the third optical element layer (350) is etched in a bridge shape and the first type semiconductor layer (220) of the second optical element layer (250) is opened so that the second optical element region (420) is formed between the bridges of the first type semiconductor layer (320) of the third optical element layer (350) that were etched in a bridge shape.

[0081] Then, the third optical element region, the second optical element region, and the first optical element region are masked, and the remaining region is etched, but the first type semiconductor layer (220) of the second optical element layer (250) is etched in a bridge shape and the first type semiconductor layer (120) of the first optical element layer (150) is opened so that the first optical element region (410) is formed between the bridges of the first type semiconductor layer (220) of the second optical element layer (250) that were etched in a bridge shape.

[0082] In this embodiment, a first electrode (610) is formed on each optical element part, and the bridge of the first type semiconductor layer (220) of the second optical element part (420) and the bridge of the first type semiconductor layer (320) of the third optical element part (430) are formed horizontally extended on the substrate (10), and the first electrode (610) is formed on the first type semiconductor layer (120) of the first optical element part (410) which is open between one side of each bridge and the bridge, so that the first electrode (610) is arranged on the same line on one side of the photoelectric element, making it easy to form a common electrode and allowing the spatial arrangement of the electrodes to be efficiently achieved.

[0083] It is preferable to form the common electrode after forming a protective film (710) that opens the electrode region over the entire area of ​​the photoelectric device. Additionally, depending on the case, the protective film (710) may be formed before forming the electrode, the electrode may be formed in the open electrode region, and then connected to the common electrode.

[0084] FIG. 2(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a first electrode (610) formed in each optical element, a first electrode (610) formed on a bridge of a first type semiconductor layer (320) of a third optical element (430), a first electrode (610) formed on a bridge of a first type semiconductor layer (220) of a second optical element (420), and a first electrode (610) formed on a first type semiconductor layer (120) of a first optical element (410). FIG. 2(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 2(a), and FIG. 2(e) is a cross-sectional schematic diagram in the BB' direction.

[0085] FIG. 2(b) is a planar schematic diagram showing a common electrode formed for the protective film (710) and the first electrode (610), FIG. 2(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 2(f) is a cross-sectional schematic diagram in the DD' direction.

[0086] In this way, by manufacturing the third optical element (430) and the second optical element (420) so that the optical element is horizontally arranged on the substrate (10) and the third optical element (430) and the second optical element (420) share the first type semiconductor layer of the second optical element (420) in a partially horizontal manner, the device structure can be made compact, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing an optical device with excellent electrical characteristics.

[0087] In addition, the first type semiconductor layer (320), (220) is manufactured in a bridge type and the first electrode (610) is placed on one side, thereby forming the first electrode (610) so that it is easy to connect to a common electrode, thereby improving the efficiency of the spatial arrangement of the electrodes and enabling the miniaturization of RGB pixels, making it easy to apply to large-area, high-resolution full-color displays.

[0088] According to Embodiment 2 of the present invention as illustrated in FIG. 3, a buffer layer (110) is formed on a substrate (10), and a first light-emitting element (410) emitting blue light, a second light-emitting element (420) emitting green light, and a third light-emitting element (430) emitting red light are formed horizontally on the substrate (10). Similar to Embodiment 1, each light-emitting element is formed by setting an open area through masking and etching. In particular, in this embodiment, each light-emitting element can be formed completely separated from the substrate (10) and can be implemented by an isolation process, etc.

[0089] In this embodiment, the open shape of the first type semiconductor layer (320) and (220) of the third optical element part (430) and the second optical element part (420) is formed as a rectangle, and naturally, the open shape of the first type semiconductor layer (120) of the first optical element part (410) is also formed as a rectangle. In this embodiment, the open area of ​​the first type semiconductor layer (120), (220), and (320) is formed as a rectangle that is extended in the vertical direction with respect to the arrangement direction of the optical element part.

[0090] A first electrode (610) is formed on each optical element, and the first electrode (610) is formed in an extended area on a first type semiconductor layer (120), (220), (320) that is open in a square shape, so that the first electrode (610) is placed on one side of all RGB pixels, thereby facilitating the formation of a common electrode and enabling efficient spatial arrangement of the electrodes.

[0091] FIG. 3(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a first electrode (610) formed in each optical element, a first electrode (610) formed on a first type semiconductor layer (320) of a third optical element (430), a first electrode (610) formed on a first type semiconductor layer (220) of a second optical element (420), and a first electrode (610) formed on a first type semiconductor layer (120) of a first optical element (410). FIG. 3(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 3(a), and FIG. 3(e) is a cross-sectional schematic diagram in the BB' direction.

[0092] FIG. 3(b) is a planar schematic diagram showing the formation of a common electrode for the protective film (710) and the first electrode (610), FIG. 3(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 3(f) is a cross-sectional schematic diagram in the DD' direction.

[0093] FIG. 3(f) is formed by adjusting the height so that the first electrode (610) and the second electrode (620) are positioned on the same plane, making it easy to bond with a PCB or CMOS backplane.

[0094] In this way, the optical element part is horizontally arranged on the substrate (10), and the formation of a common electrode is easy, making it possible to compact the device structure, while minimizing the problem of color mixing and improving the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0095] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (610) at one end to facilitate connection to the common electrode, the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0096] According to Embodiment 3 of the present invention as illustrated in FIG. 4, a buffer layer (110) is formed on a substrate (10), and a first light-emitting element (410) for blue light emission, a second light-emitting element (420) for green light emission, and a third light-emitting element (430) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element is formed by setting an open area and an exposed area through masking and etching.

[0097] In particular, in this embodiment, the second optical element part (420) and the third optical element part (430) share the first type semiconductor layer (220) of the second optical element part (420) horizontally, and the open areas of the first type semiconductor layers (120), (220), and (320) are extended vertically in the direction of arrangement of the optical element part to form a rectangular shape.

[0098] In this embodiment, the open shape of the first type semiconductor layer (320) and (220) of the third optical element part (430) and the second optical element part (420) is formed as a rectangle, and naturally, the open shape of the first type semiconductor layer (120) of the first optical element part (410) is also formed as a rectangle.

[0099] A first electrode (610) is formed on each optical element, and the first electrode (610) is formed on the first type semiconductor layer (120), (220), (320) on the open area that is extended perpendicularly to the arrangement direction of the optical element, so that the first electrode (610) is arranged on one side of the RGB pixel, thereby facilitating the formation of a common electrode and enabling efficient spatial arrangement of the electrodes.

[0100] FIG. 4(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a first electrode (610) formed in each optical element, a first electrode (610) formed on a first type semiconductor layer (320) of a third optical element (430), a first electrode (610) formed on a first type semiconductor layer (220) of a second optical element (420), and a first electrode (610) formed on a first type semiconductor layer (120) of a first optical element (410). FIG. 4(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 4(a), and FIG. 4(e) is a cross-sectional schematic diagram in the BB' direction.

[0101] FIG. 4(b) is a planar schematic diagram showing the formation of a common electrode for the protective film (710) and the first electrode (610), FIG. 4(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 4(f) is a cross-sectional schematic diagram in the DD' direction.

[0102] FIG. 4(f) is formed by adjusting the height so that the first electrode (610) and the second electrode (620) are positioned on the same plane, making it easy to bond with a PCB or CMOS backplane.

[0103] In this way, by manufacturing the third optical element (430) and the second optical element (420) so that the optical element part is horizontally arranged on the substrate (10) and the first type semiconductor layer (220) of the second optical element part (420) is horizontally shared, the formation of a common electrode is easy, making it possible to compact the device structure, while minimizing the problem of color mixing and improving the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0104] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (610) at one end to facilitate connection to the common electrode, the spatial arrangement of the electrodes is made efficient, thereby enabling miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0105] According to Embodiment 4 of the present invention as illustrated in FIG. 5, a buffer layer is formed on a substrate (10), and a first light-emitting element (410) for blue light emission, a second light-emitting element (420) for green light emission, and a third light-emitting element (430) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element is formed by setting an open area and an exposed area through masking and etching.

[0106] In particular, in this embodiment, the second optical element part (420) and the third optical element part (430) share the first type semiconductor layer (220) of the second optical element part (420) horizontally, and share the first type semiconductor layer (120) with the first optical element part (410), and the first electrode (610) is formed on the first type semiconductor layers (120), (220), and (320) which are open parallel to the arrangement direction of the optical element part. In this embodiment, the first electrode (610) becomes the common electrode.

[0107] In this embodiment, the open shape of the first type semiconductor layer (320) and (220) of the third optical element part (430) and the second optical element part (420) is formed as a rectangle, and naturally, the open shape of the first type semiconductor layer (120) of the first optical element part (410) is also formed as a rectangle.

[0108] A first electrode (610) is formed on each optical element, and a first electrode (610) is formed on a first type semiconductor layer (120), (220), (320) that is open parallel to the arrangement direction of the optical element.

[0109] FIG. 5(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a first electrode (610) formed in each optical element and the first electrode (610) formed on the first type semiconductor layers (120), (220), (320). FIG. 5(c) is a cross-sectional schematic diagram in the AA' direction of FIG. 5(a).

[0110] FIG. 5(b) is a planar schematic diagram showing a protective film (710) and a first electrode (610) which is a common electrode, FIG. 5(d) is a cross-sectional schematic diagram in the BB' direction, and the first electrode (610) and the second electrode (620) are formed by adjusting their height so that their upper ends are positioned on the same plane, thereby facilitating bonding with a PCB or CMOS backplane.

[0111] In this way, by manufacturing the second optical element (420) and the third optical element (430) to share the first type semiconductor layer (220) of the second optical element (420) horizontally and the first optical element (410) to share the first type semiconductor layer (120) of the first optical element (410) horizontally, the formation of a common electrode is easy, thereby enabling the compactness of the device structure, while minimizing the problem of color mixing and improving the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0112] In addition, by manufacturing the optical element part in a square shape and placing the first electrode (610) on one side to facilitate connection to the common electrode, the spatial arrangement of the electrodes is made more efficient, thereby enabling the miniaturization of the RGB pixels and making it easy to apply to large-area, high-resolution full-color displays.

[0113] In addition, in this embodiment, the second optical element part (420) and the third optical element part (430) can be formed so that each optical element part operates independently or in conjunction with each other by horizontally sharing the first type semiconductor layer (220) of the second optical element part (420) and the first type semiconductor layer (120) of the first optical element part (410). This is to improve the uniformity of color distribution and color reproduction by reinforcing the optical element part with low light emission efficiency by forming a large area of ​​the optical element part located far from the light-emitting surface, as needed. For example, in the embodiment of the present invention, the area of ​​the green light-emitting optical element part with low light emission efficiency is formed large to attempt an effect similar to implementing RGGB, RGBBB, or RGGBBB-pixel.

[0114] That is, in the present embodiment 4, each optical element shares the first type semiconductor layer (120), (220) and the active layer (130), (230) horizontally with each other, so that the third optical element (430) emits light with the active layer region limited to the third optical element region, the second optical element (420) emits light in the third optical element region and the second optical element region with the active layer (230) extended to the third optical element region, and the first optical element (410) emits light in the third optical element region, the second optical element region, and the first optical element region with the active layer (130) extended to the second optical element region and the third optical element region.

[0115] As such, the present invention has the advantage of easily expanding the light-emitting region according to a structure in which each optical element part horizontally shares a portion of the first type semiconductor layer and the active layer.

[0116] According to Embodiment 5 of the present invention as illustrated in FIG. 6, a buffer layer (110) is formed on a substrate (10), and a first light-emitting element part (410) for blue light emission, a second light-emitting element part (420) for green light emission, and a third light-emitting element part (430) for red light emission are formed horizontally on the substrate (10). Similar to Embodiments 1 and 2, each light-emitting element part is formed by setting an open area and an exposed area through masking and etching.

[0117] In particular, in this embodiment, the second optical element part (420) and the third optical element part (430) share the first type semiconductor layer (220) of the second optical element part (420) horizontally, wherein the open area of ​​the first type semiconductor layer (320) of the third optical element part (430) forms a rectangular shape extended in a direction parallel to the arrangement direction of the optical element part, and the open area of ​​the first type semiconductor layer (220) of the second optical element part (420) forms a rectangular shape extended to both sides of the optical element part in a direction perpendicular to the arrangement direction of the optical element part.

[0118] In this embodiment, the open shape of the first type semiconductor layer (320) and (220) of the third optical element part (430) and the second optical element part (420) is formed as a rectangle, and naturally, the open shape of the first type semiconductor layer (120) of the first optical element part (410) is also formed as a rectangle.

[0119] A first electrode (610) is formed on each optical element part, and a first electrode (610) is formed on the first type semiconductor layer (320) of a third optical element part (430) on an open area that extends in a direction parallel to the arrangement direction of the optical element part, and a first electrode (610) is formed in a bridge shape on the first type semiconductor layer (220) of a second optical element part (420) on an open area that extends on both sides of the optical element part in a direction perpendicular to the arrangement direction of the optical element part, and the first electrode (610) formed on the first type semiconductor layer (320) of the third optical element part (430) is also formed in a bridge shape towards the outer side at a position adjacent to the first optical element part (410).

[0120] Accordingly, the first electrode (610) of the third optical element part (430), the bridge-type first electrode (610) of the second optical element part (420), and the bridge-type first electrode (610) of the first optical element part (410) are arranged such that one end is placed on one side of the element, and by forming a common electrode, the spatial arrangement of the electrodes is made efficient.

[0121] FIG. 6(a) is a planar schematic diagram showing the shape and structure of each optical element and the arrangement of electrodes, illustrating a second electrode (620) formed in each optical element, a first electrode (610) formed on a first type semiconductor layer (320) of a third optical element (430), a first electrode (610) formed in a bridge shape on a first type semiconductor layer (220) of a second optical element (420), and a first electrode (610) formed in a bridge shape on a first type semiconductor layer (120) of a first optical element (410).

[0122] Figure 6(c) shows a schematic cross-sectional view in the AA' direction of Figure 6(a), and Figure 6(e) shows a schematic cross-sectional view in the BB' direction.

[0123] FIG. 6(b) is a planar schematic diagram showing a common electrode formed for a protective film (710) and a first electrode (610), FIG. 6(d) is a cross-sectional schematic diagram in the CC' direction, and FIG. 6(f) is a cross-sectional schematic diagram in the DD' direction. FIG. 6(f) is formed by adjusting the height so that the first electrode (610) and the second electrode (620) are positioned on the same plane at their upper ends, thereby facilitating bonding with a PCB or CMOS backplane.

[0124] In this way, by manufacturing the third optical element (430) and the second optical element (420) so that the optical element part is horizontally arranged on the substrate (10) and the first type semiconductor layer (220) of the second optical element part (420) is horizontally shared, the formation of a common electrode is easy, making it possible to compact the device structure, while minimizing the problem of color mixing and improving the problem of high driving voltage and leakage current, thereby providing an optical device with excellent electrical characteristics.

[0125] In addition, the optical element part is manufactured in a square shape, and the electrodes are arranged in a bridge shape and a square shape so that a common electrode can be implemented by the first electrode (610) on one side, thereby facilitating connection to the common electrode, thus improving the efficiency of the spatial arrangement of the electrodes, which enables miniaturization of the RGB pixels and makes it easy to apply to a large-area, high-resolution full-color display.

[0126] In addition, by implementing a bridge-type first electrode (610), the electrode area is expanded to improve the spreading effect of carriers (e.g., electrons), thereby further improving the luminous efficiency.

[0127] Thus, the photoelectric device according to the embodiment of the present invention designs the shape and structure of the photoelectric device part, adjusts the open area to improve spatial arrangement efficiency of the electrodes, and designs an optimal structure capable of further increasing luminous efficiency.

[0128] In addition, the present invention enables the realization of a full-color RGB-pixel capable of mass production with excellent large-area reproducibility by forming a plurality of optical element layers vertically, including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and forming a buffer layer between them in an epitaxial structure, and forming an optical element portion horizontally arranged on a substrate by a selective etching and opening process.

[0129] In addition, by manufacturing the optical device part so that the first type semiconductor layer of the optical device layer formed in the middle is partially shared, the formation of a common electrode is easy, making it possible to compact the device structure, and since RGB-pixels can be implemented in the horizontal direction on a single substrate, the problem of color mixing is minimized, and the problem of high driving voltage and leakage current is improved, thereby providing an optical device with excellent electrical characteristics.

[0130] In addition, the photoelectric device according to one embodiment of the present invention provides a structure that can implement a common electrode by connecting the first electrodes (610) to each other, or can adjust the area of ​​the first electrode to improve the electron spreading effect and thus provide a photoelectric device that improves luminous efficiency.

[0131] In addition, due to the selective sharing structure of some first-type semiconductor layers in the optical device section, each optical device section can operate independently or in conjunction with one another, and as needed, the operation of a single or multiple optical device sections according to the emission wavelength can be easily implemented, thereby facilitating the control of the emission area and reinforcing the optical device section with low emission efficiency to improve the uniformity of color distribution and color reproduction.

[0132] In addition, the light-emitting area of ​​each optical element can be easily expanded according to a structure in which each optical element shares a portion of the first type semiconductor layer and the active layer horizontally. Explanation of the symbols

[0133] 10 : Entry 110, 210, 310 : Buffer layer 120, 220, 320: Type 1 semiconductor layer 130, 230, 330: Active layer 140, 240, 340: Type 2 semiconductor layer 150: First optical device layer 250 : Second optical layer 350 : Third optical layer 410 : 1st optical element section 420 : 2nd optical element section 430: Third optoelectronic element 510: Current spreading layer 610: First electrode 612: Common electrode 620 : Second electrode 710 : Protective shield

Claims

Claim 1 A plurality of photodetector layers having different emission wavelengths are formed on a substrate, and a buffer layer is formed between the substrate and the lowest photodetector layer and between two adjacent photodetector layers. Each photodetector layer is formed to include a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate. A second type semiconductor layer is exposed above each photodetector layer, and a first type semiconductor layer is opened below each photodetector layer. Photodetector portions having different emission wavelengths are formed horizontally with respect to the substrate. A first electrode is formed in a region on the opened first type semiconductor layer, and a second electrode is formed on each photodetector portion. The photodetector portion has a size greater than the thickness of the second type semiconductor layer in the remaining photodetector portion at the thickness of the second type semiconductor layer in the uppermost photodetector portion. The first electrodes are electrically connected to each other through a straight common electrode on the opened first type semiconductor layer of each photodetector portion, and form a step below the common electrode from the foremost first electrode A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that when counted sequentially toward the rearmost first electrode, the second electrode formed on the exposed second type semiconductor layer is compared with the second electrode, and the second electrode is not positioned in the region between two adjacent photovoltaic parts while forming a step along the arrangement direction of the photovoltaic parts, and when counted sequentially from the frontmost second electrode toward the rearmost second electrode along the arrangement direction of the photovoltaic parts, the second electrode is positioned around the frontmost or rearmost second electrode outside the region between the frontmost second electrode and the rearmost second electrode in the arrangement direction of the photovoltaic parts and faces the first electrode in a straight line, or faces the first electrode in a straight line every time the second electrode appears in a direction perpendicular to the arrangement direction of the photovoltaic parts. Claim 2 A method for manufacturing a photoelectric device having multiple wavelengths, wherein, in claim 1, the optical element part is formed to operate independently of each other. Claim 3 A method for manufacturing a photoelectric device having multiple wavelengths, wherein, in claim 1, the optical element part is formed to horizontally share one or more of the first type semiconductor layers and operate independently or in conjunction with each other. Claim 4 A method for manufacturing a photovoltaic device having multiple wavelengths, wherein, in claim 1, the first type semiconductor layer is characterized in that the open shape is formed in any one of a polygonal, circular, elliptical, and bridge shape. Claim 5 delete Claim 6 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in claim 1, a protective film with an open electrode region is formed over the entire region of the photovoltaic device before or after the formation of the first electrode and the second electrode. Claim 7 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in claim 6, after the formation of the protective film, the first electrodes formed on the first type semiconductor layer are connected to each other to form a common electrode. Claim 8 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in claim 1, the first electrode and the second electrode are formed by adjusting their height so that their upper ends are located on the same plane. Claim 9 A method for manufacturing a photovoltaic device having multiple wavelengths according to claim 1, wherein the above material is one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass. Claim 10 delete Claim 11 A method for manufacturing a photovoltaic device having multiple wavelengths according to claim 1, wherein the buffer layer is formed as a single layer or a plurality of layers by combining two or more of the following materials: GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb; or formed as a single layer or a plurality of layers by combining two or more of the following materials. Claim 12 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in claim 1, the first type semiconductor layer is an n-type semiconductor layer or a p-type semiconductor layer, and the second type semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer. Claim 13 In claim 12, the n-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb. The p-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of these materials, or is formed as a single layer or a plurality of layers combining two or more of two or more of these materials by mixing two or more materials, and the p-type semiconductor layer is formed as p-GaN, p-InGaN, A method for manufacturing a photovoltaic device having multiple wavelengths, characterized by forming a single layer or multiple layers combining two or more of the materials selected from p-AlGaN, p-InAlGaN, n-InAlGaP, p-GaAs, p-AlGaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb, or forming a single layer or multiple layers combining two or more of the materials selected from p-AlGaInSb. Claim 14 A method for manufacturing a photovoltaic device having multiple wavelengths, wherein the active layer is formed by repeatedly depositing a plurality of layers combining two or more of the following: GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb. Claim 15 In claim 1, the first type semiconductor layer or the second type semiconductor layer is each n ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++ -AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n ++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ A method for manufacturing a photovoltaic device having multiple wavelengths, characterized by having one or more layers of AlGaAs or a p / n junction layer. Claim 16 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in the case where the first type semiconductor layer is formed as a p-type semiconductor layer or the second type semiconductor layer is formed as a p-type semiconductor layer, a diffusion blocking layer or an electron blocking layer is formed between each active layer and the p-type semiconductor layer. Claim 17 A method for manufacturing a photovoltaic device having multiple wavelengths, wherein, in claim 1, the first electrode is formed in any one of the shapes of a polygon, a circle, an ellipse, and a bridge. Claim 18 A method for manufacturing a photovoltaic device having multiple wavelengths, characterized in that, in claim 17, the first electrodes are arranged on the same horizontal line and connected to each other to form a common electrode. Claim 19 A plurality of photodetector layers having different emission wavelengths are formed on a substrate, a buffer layer is formed between the substrate and the lowest photodetector layer and between two adjacent photodetector layers, and each individual photodetector layer is formed to include a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, the second type semiconductor layer is exposed above each photodetector layer and the first type semiconductor layer is opened below each photodetector layer, so that photodetector portions having different emission wavelengths are formed horizontally with respect to the substrate, a first electrode is formed in a region on the opened first type semiconductor layer, and a second electrode is formed on each photodetector portion, and the photodetector portion has a size that is larger than the thickness of the second type semiconductor layer in the remaining photodetector portion at the thickness of the second type semiconductor layer in the uppermost photodetector portion, and the first electrodes are electrically connected to each other through a straight common electrode on the opened first type semiconductor layer of each photodetector portion, and from the foremost first electrode, forming a step below the common electrode A photoelectric device having multiple wavelengths, characterized in that when counted sequentially toward the rearmost first electrode, the second electrode formed on the exposed second type semiconductor layer is compared with the second electrode, the second electrode is not located in the region between two adjacent photoelectric device parts while forming a step along the arrangement direction of the photoelectric device part, and when counted sequentially from the frontmost second electrode toward the rearmost second electrode along the arrangement direction of the photoelectric device part, the second electrode is located outside the region between the frontmost second electrode and the rearmost second electrode in the arrangement direction of the photoelectric device part and faces the first electrode in a straight line, or faces the first electrode in a straight line every time the second electrode appears in a direction perpendicular to the arrangement direction of the photoelectric device part. Claim 20 In claim 19, the photoelectric device having multiple wavelengths is characterized in that the photoelectric device portions are formed to operate independently of each other. Claim 21 In claim 19, the photoelectric device having multiple wavelengths is characterized in that the photoelectric device part is formed to operate independently or in conjunction with one or more of the first type semiconductor layers by sharing them horizontally. Claim 22 In claim 19, the above-mentioned first-type semiconductor layer is characterized in that the open shape is formed in any one of a polygonal, circular, elliptical, and bridge shape, forming a multi-wavelength optoelectronic device. Claim 23 delete Claim 24 A photovoltaic device having multiple wavelengths, characterized in that, in claim 19, a protective film with an open electrode region is formed over the entire region of the photovoltaic device before or after the formation of the first electrode and the second electrode. Claim 25 A photoelectric device having multiple wavelengths according to claim 24, characterized in that, after the formation of the protective film, the first electrodes formed on the first type semiconductor layer are connected to each other to form a common electrode. Claim 26 In claim 19, the photoelectric device having multiple wavelengths is characterized in that the first electrode and the second electrode are formed by adjusting their height so that their upper ends are located on the same plane. Claim 27 In claim 19, the above description is characterized as being any one of silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), boron nitride (BN), SiC, GaN, ZnO, MgO, InP, Ge, InAs, GaSb, sapphire, quartz, and glass, forming a photoelectric device having multiple wavelengths. Claim 28 delete Claim 29 In claim 19, the buffer layer is characterized by being formed as a single layer or multiple layers by combining two or more of the following materials: GaAs, Un-GaN, AlN, AlGaN, InAlGaN, SiN, MgN, InN, InAs, AlAs, AlGaAs, InAlGaAs, GaP, InGaAsSb, InGaAsP, AlGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb, or by mixing two or more materials to form a single layer or multiple layers by combining two or more of the same. Claim 30 A photoelectric device having multiple wavelengths, characterized in that, in claim 19, the first type semiconductor layer is an n-type semiconductor layer or a p-type semiconductor layer, and the second type semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer. Claim 31 In claim 30, the n-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of any one of the following materials: n-GaN, n-InGaN, n-AlGaN, n-InAlGaN, n-InAlGaP, n-GaAs, n-AlGaAs, n-InAlGaAs, n-AlGaAsP, n-InGaAsP, n-GaInP, n-AlGaInP, n-InGaP, n-InGaAsSb, n-InGaAsP, n-InGaAlAs, n-GaSb, n-AlSb, n-InAs, n-InSb, n-AlGaSb, n-AlInSb, n-GaInSb, n-GaInAsSb, n-AlGaInSb. The p-type semiconductor layer is formed as a single layer or a plurality of layers combining two or more of these materials, or a single layer or a plurality of layers combining two or more of two or more of these materials, by mixing two or more materials, and the p-type semiconductor layer is formed as p-GaN, p-InGaN, A photoelectric device having multiple wavelengths, characterized by being formed as a single layer or a plurality of layers combining two or more of any one of p-AlGaN, p-InAlGaN, n-InAlGaP, p-GaAs, p-InAlGaAs, p-InAlGaAs, p-AlGaAsP, p-InGaAsP, p-GaInP, p-AlGaInP, p-InGaP, p-InGaAsSb, p-InGaAsP, p-InGaAlAs, p-GaSb, p-AlSb, p-InAs, p-InSb, p-AlGaSb, p-AlInSb, p-GaInSb, p-GaInAsSb, and p-AlGaInSb, or formed as a single layer or a plurality of layers combining two or more of the same by mixing two or more of the same. Claim 32 In claim 19, the photovoltaic device having multiple wavelengths is characterized in that the active layer is formed by repeatedly depositing a plurality of layers combining two or more of GaN, InGaN, AlGaN, InAlGaN, InAlGaP, GaAs, AlGaAs, InAlGaAs, AlGaAsP, InGaAsP, GaP, GaAsP, GaInP, AlGaInP, InGaP, InGaAsSb, InGaAsP, InGaAlAs, GaSb, AlSb, InAs, InSb, AlGaSb, AlInSb, GaInSb, GaInAsSb, and AlGaInSb. Claim 33 In claim 19, the above-mentioned Type 1 semiconductor layer or Type 2 semiconductor layer is, respectively, n ++ -GaN layer, p ++ -GaN layer, n ++ -InGaN layer, p ++ -InGaN layer, n ++ -AlGaN layer, p ++ -AlGaN layer, n ++ -GaAs layer, p ++ -GaAs layer, n ++ -InGaAs layer, p ++ -InGaAs layer, n ++ -AlGaAs layer, p ++ - A photovoltaic device having multiple wavelengths, characterized by being one or more of the AlGaAs layers or a p / n junction layer. Claim 34 A photoelectric device having multiple wavelengths, characterized in that, in the case where the first type semiconductor layer is formed as a p-type semiconductor layer or the second type semiconductor layer is formed as a p-type semiconductor layer, a diffusion blocking layer or an electron blocking layer is formed between each active layer and the p-type semiconductor layer. Claim 35 In claim 19, the photoelectric device having multiple wavelengths is characterized in that the first electrode is formed in any one of a polygonal, circular, elliptical, and bridge shape. Claim 36 A photoelectric device having multiple wavelengths according to claim 35, characterized in that the first electrodes are arranged on the same horizontal line and connected to each other to form a common electrode.

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