Transmissive EUV lithography device with stage control function

Abstract

The present invention relates to a transmission type EUV lithography apparatus with a stage control function, wherein the lithography apparatus comprises: an EUV light source; a first membrane-type diffractive optical element that transmits EUV light output from the EUV light source to provide illumination light; a transmission type EUV mask that generates pattern light patterned on a wafer using EUV light transmitted through the first membrane-type diffractive optical element; a second membrane-type diffractive optical element for exposing the pattern light generated from the transmission type EUV mask to the wafer; and a stage unit for irradiating the pattern light while moving along each region of the wafer.

Description

Technology Field

[0001] The present invention relates to a transmissive EUV lithography apparatus with a stage control function, and more specifically, to a transmissive EUV lithography apparatus with a stage control function capable of controlling pattern light to be irradiated onto a wafer in a transmissive lithography apparatus. Background Technology

[0002] An illumination system for EUV lithography is disclosed in US 5,361,292, DE 103 17 667 A1, US 2010 / 0231882 A1, and US 6 507 440B1, etc.

[0003] A facet mirror positioned such that the partial beam of each facet is projected onto the object field in such a way that it overlaps with the object field, that is, the spatial position of the facet mirror of the facet mirror of the facet mirror, predefines the direction of illumination, and at the same time the edge contour of the collision of the facet mirror predefines the field shape of the object field, is known as a so-called specular reflector, for example, in DE 103 17 667 A1 and US 2010 / 0231882 A1.

[0004] Hereinafter, such facet mirrors are referred to as specular facet mirrors, and individual facets of such facet mirrors are also referred to as specular facets. In the case of specular reflectors according to DE 103 17 667 A1 and US 2010 / 0231882 A1, each individual facet is also composed of a plurality of individual micromirrors.

[0005] Recently, EUV lithography machines for fabricating semiconductor devices using EUV light with a wavelength of 13.5 nm are being introduced into the semiconductor manufacturing process in earnest. EUV lithography machines are advantageous for device miniaturization because they use shorter wavelengths compared to existing 193 nm ArF lithography machines.

[0006] In the future, it is expected that EUV lithography machines with a numeric aperture of 0.55, which is larger than the current 0.33 NA, will be introduced, enabling the formation of even smaller miniaturized patterns.

[0007] EUV lithography machines currently used in industry consist of an optical system composed of an EUV light source generated from a laser plasma and mirrors with multilayer films that reflect the EUV light. Additionally, an EUV mask is used as a base mask to form fine patterns.

[0008] EUV masks have a different structure from conventional ArF lithography machines. The most significant difference is the change from a transmissive structure to a reflective structure. As both the EUV optical system and the EUV mask in the EUV lithography machine have been changed to reflective types, they have the disadvantage of significant light loss due to limited reflectivity.

[0009] Each mirror and EUV mask constituting EUV optics has a theoretical maximum reflectance of 70%, which means that at least 30% of light loss is caused by each mirror.

[0010] It is reported that the EUV mirrors currently applied to EUV lithography machines have a reflectivity of approximately 64–68%. In a minimum lithography machine, five mirrors are used in the illumination system and six mirrors are applied for projection, resulting in a total of 12 EUV mirrors including the EUV mask. This means that the optical efficiency of the EUV optical system is 0.68^12 to 1% or less, and only about 1% of the generated light is used to transfer patterns onto the wafer. This is significantly inefficient, leading to a situation where the productivity of the EUV lithography equipment is determined by the output of the light source.

[0011] Therefore, there is a continuous demand in the semiconductor industry for the technological development of EUV lithography machines and lithography methods capable of improving EUV light efficiency.

[0012] The maximum transmittance of conventional projection optics is 12%, which is significantly lower compared to the 38% efficiency of zone plate lenses. The specific problems of existing reflective EUV systems are, first, that reflective EUV mirrors and masks do not exceed a theoretical maximum reflectance of 70%, resulting in significant light loss, and second, that a system including four lighting mirrors has a theoretical maximum transmittance of only 25%.

[0013] In addition, conventional EUV lithography systems are implemented with ring-field illumination on a reflective EUV mask. An exposure device applying such ring-field illumination (oblique incidence) is configured such that the main light axis is incident at 6 degrees due to the reflective EUV mask and rotates by + / - 25 degrees depending on the mask position, so that the illumination field shape has a ring shape that is arc-shaped.

[0014] However, conventional EUV lithography devices suffer from shadowing effects due to oblique incidence structures and complex equipment control issues resulting from the requirement for pattern correction when using reflective EUV masks.

[0015] In order to resolve the aforementioned conventional problems, a lithography device with a transmissive structure is provided, and continuous technical development is required for the components of the lithography system required therein. Prior art literature

[0016] KR Registered Patent No. 10-0582814 KR Registered Patent No. 10-2056795 EP Published Patent No. 0969325 US Published Patent No. 08 / 824625 KR Published Patent No. 10-1999-0078346 EP Published Patent No. 1999-302441 US Published Patent No. 2024-011122 KR Registered Patent No. 10-2413001 US Registered Patent No. 9,581,910 The problem to be solved

[0017] The present invention aims to provide a transmission type EUV lithography device with a stage control function to solve the above-mentioned problems.

[0018] The main technical objective of the present invention is to simplify the control of the EUV lithography device by eliminating the occurrence of a shadowing effect and the need for pattern correction.

[0019] In addition, another technical objective of the present invention is to provide a high-efficiency EUV lithography apparatus that applies a membrane-type diffractive optical element.

[0020] In addition, another technical objective of the present invention is to develop an exposure technology with a 1:1 ratio between the EUV Mask and the wafer pattern by applying a transmissive EUV Mask, thereby providing high-performance EUV exposure technology with high productivity.

[0021] In addition, the present invention aims to provide a lithography device capable of appropriately resolving the problem of the optical mechanism resulting from the application of diffractive optical elements due to the characteristics of a transmission type lithography device. means of solving the problem

[0022] The present invention, for achieving the above-mentioned purpose, comprises a lithography apparatus including: an EUV light source; a first membrane-type diffractive optical element that transmits EUV light output from the EUV light source to provide illumination light; a transmission-type EUV mask that generates pattern light patterned on a wafer using EUV light transmitted through the first membrane-type diffractive optical element; a second membrane-type diffractive optical element for exposing the pattern light generated by the transmission-type EUV mask to the wafer; and a stage portion for irradiating the pattern light while moving along each region of the wafer.

[0023] In addition, the stage portion is composed of a first stage for driving the transmission type EUV mask and a second stage for driving the wafer.

[0024] In addition, the first stage is configured to include an open frame portion that is open in the center to allow illumination light passing through the transmissive EUV mask to pass through, and in which the transmissive EUV mask can be fixedly installed in the open center.

[0025] In addition, during the process of irradiating the wafer with the pattern light, the first stage and the second stage are driven by a drive control that moves in opposite directions.

[0026] In addition, the first stage and the second stage are driven by control to move to the -x axis with respect to the x axis or to the -y axis with respect to the y axis, respectively.

[0027] In addition, the EUV light passing through the above-mentioned transmissive EUV mask has a rectangular or square shape.

[0028] In addition, the above EUV light source is composed of an EUV light source with a wavelength of 12 nm to 14 nm generated by a plasma reaction through a lithium or lithium alloy target.

[0029] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are composed of zone-plate lenses.

[0030] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are composed of a single zone-plate lens array in which a plurality of zone-plate lenses are formed.

[0031] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are configured to have a thickness of 1 μm or less.

[0032] In addition, the second membrane-type diffraction optical element irradiates pattern light so that the transmission type EUV mask pattern is exposed to the wafer at a 1:1 ratio.

[0033] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are characterized by having zone plate lenses constituting the zone plate lens array matched in a 1:1 ratio, so that the number and position of the array are identical.

[0034] In addition, an order sorting aperture is further included between the first membrane-type diffraction optical element and the transmission-type EUV mask, and between the transmission-type EUV mask and the second membrane-type diffraction optical element, respectively.

[0035] In addition, the above-mentioned transmissive EUV mask corresponds to a membrane-type mask having a transmittance of 70% or more.

[0036] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are composed of a membrane having a transmittance of 38% or more. Effects of the invention

[0037] The present invention, configured and operated as described above, can achieve high transmittance in an EUV lithography device.

[0038] In particular, the present invention can optimize the performance of a lithography device because it does not generate a shadow effector and does not require pattern correction due to the absence of main optical axis rotation.

[0039] In addition, there is an advantage of overcoming the spherical aberration of the zone-plate lens configured in the zone-plate lens array used as a diffractive optical element in the EUV lithography device according to the present invention and securing a wide field of view (FOV).

[0040] In addition, the present invention has the advantage of enabling continuous exposure while moving the wafer between each lens, and by exposing the pattern of the transmissive EUV mask and the wafer at a 1:1 ratio, the wafer patterning area can be increased fourfold compared to the existing 4:1 exposure technology. Brief explanation of the drawing

[0041] FIG. 1 is a basic configuration diagram of a transmission type EUV lithography device with a stage control function applied according to the present invention. FIG. 2 is a configuration diagram of an EUV light source according to an embodiment of a transmission type EUV lithography device to which a stage control function according to the present invention is applied. FIG. 3 is a detailed configuration diagram of a transmission type EUV lithography device with a stage control function applied according to the present invention. FIG. 4 is a configuration diagram of a diffraction optical element of a transmission type EUV lithography device with a stage control function according to the present invention. FIG. 5 is a configuration diagram according to an embodiment of a transmission type EUV lithography device with a stage control function according to the present invention. FIG. 6 is an embodiment of a transmission type EUV lithography device with a stage control function applied according to the present invention. FIG. 7 is an exemplary embodiment showing the stage driving state of a transmission type EUV lithography device to which a stage control function according to the present invention is applied. FIG. 8 is a detailed embodiment of the stage driving of a transmission type EUV lithography device to which a stage control function according to the present invention is applied, FIG. 9 is a configuration diagram showing the first stage of a transmission type EUV lithography device to which a stage control function according to the present invention is applied. Specific details for implementing the invention

[0042] Hereinafter, a transmission type EUV lithography device with a stage control function according to the present invention will be described in detail with reference to the attached drawings.

[0043] A transmissive EUV lithography apparatus with a stage control function according to the present invention comprises, in the lithography apparatus: an EUV light source; a first membrane-type diffractive optical element that transmits EUV light output from the EUV light source to provide illumination light; a transmissive EUV mask that generates pattern light patterned on a wafer using EUV light transmitted through the first membrane-type diffractive optical element; a second membrane-type diffractive optical element for exposing the pattern light generated from the transmissive EUV mask to the wafer; and a stage portion for irradiating the pattern light while moving along each region of the wafer.

[0044] The transmissive EUV lithography device with a stage control function according to the present invention can improve the performance of the lithography device by implementing perpendicular incidence of the main optical axis, as the lithography device does not generate a shadow effector and does not require pattern correction because the main optical axis does not need to be rotated according to the mask position.

[0045] In addition, the purpose is to implement an exposure device capable of resolving the inverted real image phenomenon due to the characteristics of the transmission type lithography device according to the present invention.

[0046] First, a transmission type EUV lithography apparatus will be described in detail through FIGS. 1 to 5.

[0047] FIG. 1 is an overall configuration diagram of a transmission type EUV lithography device with a stage control function applied according to the present invention.

[0048] To achieve the above technical problem, the present invention provides a transmission type EUV lithography device (10) with a stage control function applied.

[0049] The EUV lithography apparatus to which the transmission type EUV mask according to the present invention is applied is largely composed of five parts, each of which consists of an EUV light source (100), a first membrane-type diffractive optical element (200) for providing illumination light, a transmission type EUV mask (300), a second membrane-type diffractive optical element (400) for providing pattern light for exposure, and a wafer (wafer; 500) coated with EUV resist.

[0050] A transmissive EUV lithography device having a stage control function according to the present invention includes a stage for an EUV mask and a stage for a wafer for exposing a pattern on the front surface of an EUV mask (300) and exposing a large number of mask patterns on a wafer.

[0051] Accordingly, the present invention is composed of an exposure device having a transmissive structure and in order to implement EUV exposure, an EUV light source (100), a first membrane-type diffractive optical element (200), a transmissive EUV mask (300), a second membrane-type diffractive optical element (400), and a wafer are sequentially arranged.

[0052] At this time, each of the aforementioned optical components is arranged sequentially so that the principal optical axis of the EUV light output from the EUV light source is incident perpendicularly, and is configured to allow the EUV light to pass through. Accordingly, since no rotation of the principal optical axis is required, system control is very easy and precision can be improved.

[0053] This invention is made possible because it applies a transmissive EUV mask according to a transmissive structure type lithography device, rather than using a reflective EUV mask applied in an EUV lithography device.

[0054] FIG. 2 is a detailed configuration diagram of a transmission type EUV lithography device with a stage control function applied according to the present invention.

[0055] The EUV light source (100) according to the present invention is preferably composed of a wavelength of 12 nm to 14 nm generated by a plasma reaction through a lithium or lithium alloy target. More preferably, the wavelength of the EUV light source may be 13.5 nm.

[0056] The advantage of applying a Li LPP or Li Alloy LPP light source instead of a conventional Sn LPP light source is that the EUV light source generated from Sn LPP produces a relatively broad spectrum around 13.5 nm. In contrast, the EUV light source generated from Li or Li Alloy LPP has a center wavelength of 13.5 nm and a very narrow linewidth with a bandwidth between 0.0045 nm and 0.00675 nm.

[0057] EUV light generated from Sn LPP light sources is collected by an EUV mirror coated with a multilayer film, and is selected as a light source with a linewidth between 0.3 nm and 0.5 nm based on the reflection spectrum of the multilayer film coating used at this time. However, since Li LPP light sources have a narrower linewidth than this, when using diffraction elements such as zoneplate lenses that cause chromatic aberration as optical elements, the light has the advantage of being able to be applied directly without another device for linewidth improvement because the linewidth is narrow.

[0058] Ultimately, the narrow linewidth makes it highly advantageous for application in diffraction optical systems.

[0059] The linewidth of 2.00045 to 0.00675 nm is such that the lambda / delta lambda is at the level of 2,000 to 3,000. If one attempts to create light with such a narrow linewidth using an Sn LPP light source and a monochromator, the light output decreases sharply because the proportion of light within the ldmaba / delta lambda range of 2,000 to 3,000 is small within the broad light spectrum around the 13.5 nm wavelength. Basically, it becomes a high spectral brightness light source with high light output within the narrow linewidth, and the application of a monochromator to reduce the linewidth is unnecessary.

[0060] Light sources that are advantageous for application to diffractive optical systems such as the above-mentioned zone plate lens are very effective light sources with high spectral brightness (high output within a narrow linewidth), such as Li LPP.

[0061] In addition, the present invention further includes a collector mirror (110) to enable high light intensity to be captured when generating EUV light through a lithium or lithium alloy target (120). This is because a laser beam is irradiated onto a lithium or lithium alloy target, and EUV light of a wavelength of 13.5 nm is generated from the lithium plasma produced from the target.

[0062] The EUV light generated here can be collected by the collector mirror (110) having a multilayer mirror that reflects light of the EUV wavelength, or the structure can have a structure in which the EUV light generated in the plasma is transmitted directly to the illuminator without passing through the collector mirror.

[0063] As such, the EUV light generated from the lithium or lithium alloy target used in the present invention is used as EUV light with high spectral brightness.

[0064] FIG. 3 is a configuration diagram of an EUV light source according to an embodiment of a transmission type EUV lithography device with a stage control function according to the present invention, and FIG. 4 is a configuration diagram of a diffraction optical element of a transmission type EUV lithography device with a stage control function according to the present invention.

[0065] The first membrane-type diffraction optical element (200) and the second membrane-type diffraction optical element (400) according to the present invention correspond to diffraction optical elements having a zone-plate lens array.

[0066] In addition, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are configured to have a thickness of 1 µm or less to satisfy transmission characteristics.

[0067] Specifically, the first membrane-type diffraction optical element (200) has a fine pattern formed of any one of Si, Si3N4, SiC, and Mo_xSi_y. The second membrane-type diffraction optical element (400) has a fine pattern formed of Mo, a Mo_xSi_y multilayer structure, or Ru.

[0068] Preferably, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are composed of a membrane having a transmittance of 38% or more.

[0069] In addition, the above-mentioned transmissive EUV mask is composed of a mask having a fine pattern formed on the membrane surface using an absorber material. As a preferred example, the material used as the absorber may be a composite material such as Ru, Ta, Ti, or Mo, which are metal-based.

[0070] Preferably, the EUV mask corresponds to a membrane-type mask having a transmittance of 90% or more.

[0071] The transmissive EUV exposure system proposed in the present invention has the following features.

[0072] Transmissive EUV masks made using membrane technology for patterning on wafers can theoretically achieve a high transmittance of 90%.

[0073] A zone-plate lens array used as a diffractive optical element has a diffraction efficiency of up to 38% and provides a monochromatic light source using a Li LPP light source. At this time, the zone-plate lens array can overcome the spherical aberration of the zone-plate lens and secure a wide field of view (FOV).

[0074] Specifically, the structural advantages of the above zone plate lens array are, first, that the illumination and exposure zone plate lenses each combine the mask pattern and the illumination area and transfer it to the wafer, and each lens is positioned at the same location along the vertical axis.

[0075] Secondly, this structure has the advantage of enabling continuous exposure while moving the wafer between each lens.

[0076] Therefore, the present invention can increase the wafer patterning area by four times compared to the existing 4:1 exposure technology by exposing the pattern of the EUV mask and the wafer at a 1:1 ratio, and secondly, can significantly increase the number of transistors required for AI chip fabrication, so it is expected to provide a great advantage in future AI technology development.

[0077] The high efficiency of the transmissive EUV lithography system can be explained in detail as follows.

[0078] First, the above-mentioned transmissive EUV mask (300) made through membrane technology can theoretically achieve a high transmittance of 90%.

[0079] In addition, the above-mentioned zone plate lens array has a diffraction efficiency of up to 38% and can be used as a monochromatic light source using a Li LPP light source.

[0080] In addition, the above-mentioned zone plate lens array can overcome the spherical aberration of zone plate lenses and secure a wide field of view (FOV).

[0081] In addition, conventional EUV lithography systems composed of Sn LPP light sources and mirror combinations use five EUV mirrors for illumination and six EUV mirrors for exposure. Additionally, since reflective EUV masks are used as masks, a total of 12 EUV mirrors are used.

[0082] Assuming the reflectance of each mirror is 70%, which is close to the theoretical value (actually at a maximum of 68% to 69%), the total system's light transmittance is 0.7^12 to 0.22 (%).

[0083] The transmittances of the illumination and transmission type EUV mask and the exposure type zone-plate lens array, which are composed of a zone-plate lens array constituting a diffractive optical element according to the present invention, correspond to 38%, 90%, and 38%, respectively. This results in a total system light transmittance of approximately 13%, which is about 59 times higher than that of a conventional reflective system composed of EUV mirrors (13 / 0.22 = 59). This means that the light efficiency is 59 times higher than that of the conventional system, which has the advantage of allowing the required EUV light output to be reduced to 1 / 59 or the exposure speed to be increased by 59 times.

[0084] The exposure magnification of the lithography device of the present invention configured as described above is 1X, whereas conventional reflective exposure devices apply an exposure magnification of 4:1, which reduces the size of the mask pattern to ¼ of the wafer. Due to the physical mask size of 6 inches, the maximum chip size that can be formed on a wafer is limited to 6 / 4 inch. In reality, since the entire 6-inch mask surface cannot be used, the maximum chip size formed on the wafer corresponds to 26 mm x 33 mm.

[0085] However, the lithography device having a 1X magnification according to the present invention can increase the maximum chip size by four times compared to the existing one by exposing the pattern of a transmission mask to a wafer at a 1:1 ratio, and as a result, the chip area can be increased by 16 times compared to the existing one. Since this means that the number of transistors included in the large chip can be increased by 16 times, this has excellent advantages for manufacturing future semiconductors that require a large number of transistors, such as AI chips.

[0086] FIG. 5 is a configuration diagram according to an embodiment of a transmission type EUV lithography device to which a stage control function according to the present invention is applied.

[0087] EUV lithography devices with a transmissive structure can significantly simplify the structure and eliminate the structural complexity of conventional reflective exposure devices, while greatly improving the exposure area and exposure speed, thereby providing excellent lithography devices for next-generation semiconductor processes.

[0088] Meanwhile, in another embodiment according to the present invention, an order-shortening aperture (OSA; 450) may be further included between the second membrane-type diffraction optical element and the wafer.

[0089] The above order sorting apertures (450A, 450B) may each be installed after the lighting zoneplate lens and the exposure zoneplate lens to block light other than the primary light generated from the zoneplate lens array that provides the lighting light and pattern light for exposure.

[0090] The present invention, configured in this manner, can achieve high transmittance in an EUV lithography device.

[0091] In particular, the present invention can optimize the performance of a lithography device because it does not generate a shadowing effect and does not require pattern correction due to the absence of rotation of the main optical axis.

[0092] FIG. 6 is an example of a transmission type EUV lithography device with a stage control function according to the present invention.

[0093] The lithography device of the transmission type structure according to the present invention comprises a stage for irradiating pattern light onto a wafer, and since an inverted real image phenomenon occurs depending on the optical characteristics of the transmission type lithography device, it is configured to include a first stage (310) for moving a transmission type mask (300) and a second stage (510) for moving a wafer (500) in order to resolve this.

[0094] At this time, due to the problem of the inverted actual phenomenon, the first stage (310) and the second stage (510) are controlled to have a driving mechanism that drives in opposite directions.

[0095] FIG. 7 is an exemplary diagram showing the stage driving state of a transmission type EUV lithography device to which a stage control function according to the present invention is applied. As shown, the first stage (310) and the second stage (510) according to time t drive in opposite directions and irradiate pattern light to expose the wafer.

[0096] At this time, each of the first stage (310) and second stage (320) irradiates pattern light onto the wafer while moving along the x,y axis and the -x,-y axis.

[0097] FIG. 8 is a detailed embodiment of the stage driving of a transmission type EUV lithography device to which a stage control function according to the present invention is applied. As shown, (A) shows the side view (a) and top view (b) of the first stage and the second stage when driven in the x-axis and -x-axis, and (B) shows the side view (a) and top view (b) of the first stage and the second stage when driven in the y-axis and -y-axis.

[0098] As such, the present invention comprises a first stage (310) for driving a transmission mask (300) and a second stage (510) for driving a wafer, respectively, and the mask stage and the wafer stage are driven in opposite directions to eliminate the inverted real image phenomenon while irradiating pattern light onto the wafer.

[0099] FIG. 9 is a configuration diagram showing the first stage of a transmission type EUV lithography device to which a stage control function according to the present invention is applied.

[0100] Unlike conventional lithography devices with a reflective structure, the lithography device according to the present invention has a transmissive structure, so a membrane-type transmissive mask is used.

[0101] At this time, a stage with a differentiated structure is used to apply the first stage while satisfying the transmission structure of the above-mentioned transmission type EUV mask. A frame part (311) is configured having an opening (312) with an open front so that the transmission type EUV mask (300) can be stably fixed and driven. After fixing the transmission type EUV mask (300) toward the opening (312) of the frame part (311), the frame part (311) is fixed and installed again on the first stage (310).

[0102] In addition, there is an advantage of overcoming the spherical aberration of the zone-plate lens configured in the zone-plate lens array used as a diffractive optical element in the EUV lithography device according to the present invention and securing a wide field of view (FOV).

[0103] In addition, the present invention has the advantage of enabling continuous exposure while moving the wafer between each lens, and by exposing the pattern of the EUV mask and the wafer at a 1:1 ratio, the wafer patterning area can be increased fourfold compared to the existing 4:1 exposure technology.

[0104] Although preferred embodiments have been described and illustrated to illustrate the principles of the present invention, the present invention is not limited to the configuration and operation as depicted and described. Rather, those skilled in the art will understand that numerous changes and modifications to the present invention are possible without departing from the spirit and scope of the appended claims. Accordingly, all such appropriate changes and modifications and equivalents should be deemed to be within the scope of the present invention. Explanation of the symbols

[0105] 100 : EUV light source 200: First membrane-type diffractive optical element 210: Zone Plate Lens Array 220 : Zone plate lens 300 : Transmissive EUV Mask 310 : Stage 1 311 : Frame section 312 : Open 400: Second membrane-type diffraction optical element 410: Zone Plate Lens Array 420 : Zone plate lens 450: OSA (order sorting aperture) 500 : Wafer 510 : Stage 2

Claims

Claim 1 A lithography apparatus comprising: an EUV light source; a first membrane-type diffractive optical element that transmits EUV light output from the EUV light source to provide illumination light; a transmissive EUV mask that generates pattern light patterned on a wafer using EUV light transmitted through the first membrane-type diffractive optical element; a second membrane-type diffractive optical element for exposing the pattern light generated from the transmissive EUV mask to the wafer; and a stage portion for irradiating the pattern light while moving along each region of the wafer; wherein the stage portion comprises a first stage for driving the transmissive EUV mask and a second stage for driving the wafer, and a stage control function applied thereto. Claim 2 delete Claim 3 A transmissive EUV lithography device with a stage control function applied, wherein the first stage comprises an open frame portion that is open in the center to allow illumination light passing through the transmissive EUV mask to pass through, and wherein the transmissive EUV mask can be fixedly installed in the open center. Claim 4 A transmission-type EUV lithography apparatus according to claim 1, wherein the first stage and the second stage are driven by a drive control that moves in opposite directions during the process of irradiating the pattern light onto the wafer. Claim 5 In claim 4, the above-mentioned first stage and second stage are each driven and controlled to move to the -x axis with respect to the x-axis or to the -y axis with respect to the y-axis, respectively, in a transmission type EUV lithography device. Claim 6 In claim 1, the EUV light passing through the transmission type EUV mask is a transmission type EUV lithography device having a rectangular or square shape and a stage control function applied thereto. Claim 7 In claim 1, the EUV light source is a transmission type EUV lithography apparatus with a stage control function, comprising an EUV light source of a wavelength of 12 nm to 14 nm generated by a plasma reaction through a lithium or lithium alloy target. Claim 8 In claim 1, the first membrane-type diffractive optical element and the second membrane-type diffractive optical element are a transmission type EUV lithography apparatus with a stage control function applied, wherein the zone-plate lens is configured. Claim 9 In claim 1 or 8, the first membrane-type diffractive optical element and the second membrane-type diffractive optical element are a transmission type EUV lithography apparatus with a stage control function applied, wherein the zone-plate lens array is composed of a plurality of zone-plate lenses. Claim 10 In claim 9, the first membrane-type diffraction optical element and the second membrane-type diffraction optical element are configured to have a thickness of 1 µm or less, and the transmission type EUV lithography apparatus with a stage control function applied.

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