Apparatus for analyzing contamination on wafer surface and method of analysis using the same

Abstract

An extraction and analysis device for wafer surface contaminants according to an embodiment of the present invention comprises: an extraction device for extracting contaminants on the surface of a wafer by supplying steam and purge gas to the wafer; a collection device connected to the extraction device for collecting condensed gas containing the contaminants; and an analysis device for analyzing the condensed gas collected by the collection device. The extraction device may include: a chamber having an internal space; a chuck disposed in the internal space to support a wafer; a heater disposed inside the chuck to heat the chuck to a preset temperature; a steam injection nozzle disposed on the upper part of the chuck to spray steam toward the wafer; a gas injection nozzle disposed on the inner wall of the chamber to spray purge gas toward the wafer; and a recovery unit disposed spaced apart from the chuck to recover condensed gas containing contaminants that escape from the wafer.

Description

Technology Field

[0001] The present invention relates to a non-destructive extraction and analysis apparatus for wafer surface contaminants using alternating steam and nitrogen pulses, and an analysis method using the same. Background Technology

[0003] [Research and development projects that supported this invention]

[0004] [Project ID] D2505031

[0005] [Ministry Name] Gyeonggi-do

[0006] [Specialized Research Management Agency] Gyeonggi Economic & Science Promotion Agency

[0007] [Research Project Name] Enterprise-led (City / County_Icheon City)

[0008] [Research Project Title] Development of Real-time Monitoring Equipment for Ultra-Trace Levels of Hazardous Heavy Metals in the Semiconductor Field

[0009] [Principal Research Institution] HiSM Co., Ltd.

[0010] [Research Period] 2025.08.01 ~ 2026.07.31

[0011] In the semiconductor manufacturing process, the wafer surface undergoes various process steps, such as etching, deposition, and cleaning. During this process, contaminants, including metal ions, halogen compounds (F, Cl, etc.), ammonium ions (NH₄⁺), and organic substances, remain on the wafer surface at ppt to ppb levels. These contaminants can cause defects in subsequent processes, poor thin film adhesion, and degradation of electrical properties, thereby severely impacting product yield. Therefore, technology capable of accurately and rapidly detecting and quantitatively analyzing contaminants present on the wafer surface is essential.

[0012] Conventionally, bag-based distillation extraction or spin-cleaning followed by analysis of treated water has been used to analyze these contaminants. While bag extraction can secure a relatively high recovery rate, it involves the destruction of the target sample; furthermore, the process is complex, and sample preparation and analysis are conducted offline, resulting in a long processing time. Although spin-cleaning analysis features a simple device structure and fast processing speed, it has limitations such as reduced sensitivity and insufficient reproducibility, with a recovery rate remaining at approximately 10%. Additionally, these methods carry the risk of wafer pattern tilting or watermarking.

[0013] Accordingly, there is a need to develop technology that extracts contaminants from the wafer surface and analyzes them in real time without causing physical damage or residual contamination to the wafer. It is believed that applying such real-time pretreatment and measurement technology will contribute significantly to preventing process accidents and improving yield through real-time process monitoring.

[0014] The present invention can improve the extraction efficiency of contaminants on a wafer surface and enable qualitative and quantitative analysis in conjunction with a detector by driving steam and purge gas with alternating pulses to repeatedly form a thin water film and vaporize contaminants.

[0015] delete Prior art literature

[65535] Registered Patent No. 10-2178593 (2020.11.16.) The problem to be solved

[0016] The present invention aims to provide a wafer surface contaminant extraction and analysis device that extracts contaminants from the wafer surface without physical damage to the wafer and analyzes them in real time by providing steam and purge gas, and an extraction and analysis method using the same.

[0017] In addition, the present invention aims to provide an apparatus for extracting and analyzing wafer surface contaminants with a high recovery rate by alternately supplying steam and purge gas multiple times, and an extraction and analysis method using the same. means of solving the problem

[0019] An extraction and analysis device for wafer surface contaminants according to an embodiment of the present invention comprises: an extraction device for extracting contaminants on the surface of a wafer by supplying steam and purge gas to the wafer; a collection device connected to the extraction device for collecting condensed gas containing the contaminants; and an analysis device for detecting the condensed gas collected by the collection device. The extraction device may include: a chamber having an internal space; a chuck disposed in the internal space to support a wafer; a heater disposed inside the chuck to heat the chuck to a preset temperature; a steam injection nozzle disposed on the upper part of the chuck to spray steam toward the wafer; a gas injection nozzle disposed on the inner wall of the chamber to spray purge gas toward the wafer; and a recovery unit disposed spaced apart from the chuck to recover condensed gas containing contaminants that escape from the wafer.

[0020] The above steam injection nozzle and the above gas injection nozzle can alternately inject the steam and the purge gas multiple times.

[0021] The above extraction device may be provided in multiple units to process multiple wafers simultaneously. In this case, the multiple extraction devices may utilize multiple collection devices to accelerate the extraction and analysis speeds. If necessary, the collection device may be installed in conjunction with a direct detector. Additionally, the collection device may be heated to maintain a temperature of 40 to 60 degrees to prevent condensation.

[0022] The above gas injection nozzle can be positioned to have a preset angle with respect to the wafer surface.

[0023] The steam injection nozzle is arranged coaxially with the central axis of the wafer and has a circular ring shape with a diameter value smaller than the diameter of the wafer, and the extraction device may further include a gas curtain nozzle arranged coaxially with the central axis of the wafer and has a circular ring shape with a diameter value larger than the diameter of the wafer.

[0024] The above analysis device may include a real-time detection module that analyzes the condensed gas in real time using a laser method.

[0025] The extraction device may further include a motor positioned at the bottom of the chuck to rotate the chuck.

[0026] A method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention comprises the steps of: heating a chuck supporting a wafer by a heater; spraying steam onto the wafer by a steam injection nozzle; spraying purge gas onto the wafer by a gas injection nozzle; recovering condensed gas containing contaminants on the wafer surface by a recovery unit; collecting the condensed gas by a collection device; and analyzing the condensed gas by an analysis device, wherein the step of spraying steam and the step of spraying purge gas may be performed alternately multiple times.

[0027] In addition, the method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention may further include the step of rotating the chuck by a motor. Effects of the invention

[0029] According to an embodiment of the present invention, a wafer surface contaminant extraction and analysis device and an analysis method using the same can be provided, which extracts contaminants from the wafer surface without physical damage to the wafer by providing steam and purge gas and analyzes them in real time.

[0030] In addition, according to an embodiment of the present invention, a wafer surface contaminant extraction analysis device and an analysis method using the same can be provided, which extract contaminants on the wafer surface with a high recovery rate by alternately supplying steam and purge gas multiple times.

[0031] Meanwhile, the effects obtainable from the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art to which the present invention belongs from the description below. Brief explanation of the drawing

[0033] FIG. 1 is a block diagram of an extraction and analysis apparatus for wafer surface contaminants according to an embodiment of the present invention. FIG. 2 is a front view of an extraction device and a collection device according to an embodiment of the present invention. FIG. 3 is a top view of an extraction device according to an embodiment of the present invention. FIG. 4 is an exemplary diagram showing the sequence of wafer surface contamination extraction according to an embodiment of the present invention. FIG. 5 is a flowchart of a method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention. FIG. 6 is an exemplary diagram of a method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention. Specific details for implementing the invention

[0034] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the embodiments below. These embodiments are provided to more fully explain the present invention to those with average knowledge in the art. Accordingly, the shapes of elements in the drawings may be exaggerated to emphasize clearer explanations.

[0035] The configuration of the invention to clarify the solution to the problem to be solved by the present invention is described in detail with reference to the attached drawings based on preferred embodiments of the present invention. In assigning reference numbers to the components of the drawings, the same reference number is assigned to identical components even if they are located in different drawings, and components of other drawings may be cited if necessary when describing the drawings.

[0036] FIG. 1 is a block diagram of a wafer surface contaminant extraction and analysis apparatus according to an embodiment of the present invention.

[0037] Referring to FIG. 1, a wafer surface contaminant extraction and analysis device according to an embodiment of the present invention may include an extraction device (1000), a collection device (2000), and an analysis device (3000).

[0038] The extraction device (1000) can extract contaminants from the wafer surface by supplying steam and purge gas to the wafer (W). At this time, the contaminants on the wafer surface may be at least one of metal ions, halogen compounds (F, Cl, etc.), ammonium ions (NH₄₀), and organic materials generated after the semiconductor manufacturing process. Additionally, the extraction device (1000) may be provided in multiple units. By doing so, contaminants can be extracted from multiple wafers (W) simultaneously.

[0039] The collection device (2000) can be connected to the extraction device (1000). Specifically, the collection device (2000) can receive condensed gas containing contaminants extracted from the extraction device (1000). Accordingly, the collection device (2000) can collect condensed gas.

[0040] The collection device (2000) may include a chamber prior to supplying to a detector for measuring contaminants. Additionally, the collection device (2000) may include a temperature maintenance function to maintain the condensed gas containing contaminants in a gaseous state.

[0041] The analysis device (3000) can analyze the condensed gas collected by the collection device (2000). Specifically, the analysis device (3000) may include at least one of a real-time detection module (3001), an ion chromatography detection module (3002), and an impinger (3003).

[0042] The real-time detection module (3001) can analyze condensed gas in real time using a laser. The real-time detection module (3001) can use a laser-based measuring instrument. For example, the real-time detection module (3001) may be a detector of the CRDS (Cavity Ring-Down Spectroscopy) type. Specifically, CRDS refers to a method of analyzing the concentration or components of gaseous contaminants extracted from the wafer surface by analyzing the change in decay time when light interacts with an absorbing gas.

[0043] The ion chromatography detection module (3002) can separate and quantitatively analyze ionic contaminants contained in the condensed gas. The ion chromatography detection module (3002) can also operate in an online detection manner and can analyze the condensed gas continuously supplied from the collection device (2000) in real time. At this time, the ion chromatography detection module (3002) may include a pretreatment device and an ion chromatography analyzer. The pretreatment device may be placed upstream of the equipment to introduce the condensed gas into the ion chromatography analyzer. The pretreatment device (e.g., diffusion scrubber) can continuously perform a pretreatment process of the condensed gas.

[0044] The impinger (3003) refers to a container for collecting and storing condensed gas. The condensed gas collected in the impinger (3003) can be transferred to an offline analysis device for analysis.

[0045] FIG. 2 is a front view of an extraction device and a collection device according to an embodiment of the present invention.

[0046] Referring to FIG. 2, an extraction device (1000) according to an embodiment of the present invention may include a chamber (1100), a chuck (1200), a heater (1300), a steam injection nozzle (1400), a gas injection nozzle (1500), a recovery unit (1600), and a motor (1700).

[0047] The chamber (1100) may have an internal space (1101). The chamber (1100) may provide a sealed space where surface contaminant extraction of the wafer (W) is performed. The chamber (1100) may be formed to a size capable of accommodating components such as a chuck (1200), a steam injection nozzle (1400), and a gas injection nozzle (1500).

[0048] Additionally, a door that can be opened and closed may be formed on the side of the chamber (1100) for the loading and unloading of a wafer (W). For example, the door may be opened and closed by a pneumatic cylinder, a motor, or a manual method.

[0049] The chuck (1200) can be placed in the internal space (1101) of the chamber (1100). The chuck (1200) can support the wafer (W). The chuck (1200) can be formed in the shape of a circular plate corresponding to the size and shape of the wafer (W).

[0050] Additionally, the chuck (1200) can stably fix the wafer (W). For example, the chuck (1200) can be configured as a vacuum chuck. In this case, the wafer (W) can be fixed by adsorption through a plurality of vacuum holes formed on the upper surface of the chuck (1200).

[0051] As another example, the chuck (1200) can be configured as an electrostatic chuck. In this case, the chuck (1200) can fix the wafer (W) by adsorbing it with electrostatic force by applying voltage to an electrode embedded inside. By doing so, the chuck (1200) can maintain the position of the wafer (W) during the process of extracting contaminants from the surface of the wafer (W).

[0052] Additionally, the chuck (1200) may be made of a material with excellent thermal conductivity. For example, the chuck (1200) may be made of aluminum alloy, copper, stainless steel, ceramic, etc. Accordingly, the chuck (1200) can uniformly transfer heat generated by the heater (1300) described later to the wafer (W). For example, an acid-resistant coating may be applied to the surface of the chuck (1200) if necessary, depending on the chuck material, to protect the chuck surface and prevent contamination.

[0053] A heater (1300) may be placed inside the chuck (1200). For example, the heater (1300) may be an electric resistance type heating element. The heater (1300) can heat the chuck (1200) by converting power supplied by an external power source into thermal energy. By doing so, the heater (1300) can heat the chuck (1200) to a preset temperature.

[0054] For example, the preset temperature can be set within the dew point temperature range (55°C or higher and 65°C or lower). Accordingly, the heater (1300) can prevent water droplets from forming on the surface of the wafer (W) and causing watermarks to form during the wafer (W) surface contaminant extraction process by heating the chuck (1200).

[0055] As another example, the preset temperature may be set to exceed the dew point temperature range (exceeding 65°C). Accordingly, the heater (1300) can perform cleaning of the chuck and chamber according to the user's needs (e.g., during long-term use) by heating the chuck (1200). By doing so, the internal space (1001) of the chamber (1000) of the present invention can be maintained in a cleaner state, thereby improving the efficiency of extraction.

[0056] A steam injection nozzle (1400) is positioned inside the chamber (1100) and above the chuck (1200) to inject steam toward the wafer (W). The steam injection nozzle (1400) may be connected to a steam source. The steam source may generate steam and supply it to the steam injection nozzle (1400). At this time, the steam may be water vapor generated by heating ultra-pure water (UPW). Ultra-pure water refers to high-purity water from which impurities have been extremely removed, used to prevent contamination of the wafer (W) in a semiconductor process.

[0057] For example, the temperature of the steam sprayed from the steam injection nozzle (1400) may be less than 105°C, and preferably maintained at 95°C or higher and less than 105°C. By doing so, when the steam reaches the surface of the wafer (W), it maintains an appropriate condensation state, thereby maximizing the efficiency of contaminant extraction.

[0058] As another example, the temperature of the steam sprayed from the steam injection nozzle (1400) may be 80°C or higher and 120°C or lower, and the optimal temperature for dissolving wafer surface contaminants may preferably be maintained at 85°C or higher and less than 105°C. At this time, the optimal state for dissolving a water film is near saturated steam conditions, and the micro-water film can be instantaneously evaporated to increase the gas phase transfer efficiency and prevent condensation residue. In the case of high temperature (105°C or higher and 120°C or lower) injection, the steam sprayed from the steam injection nozzle (1400) can clean the steam line formed between the steam source and the steam injection nozzle and the inside of the chamber. By doing so, the steam sprayed from the steam injection nozzle (1400) can be maintained in a clean state (ultra-pure).

[0059] For example, the steam injection nozzle (1400) may be in the form of a showerhead. A showerhead-shaped steam injection nozzle (1400) refers to a structure in which a plurality of fine nozzles are distributed on a flat body. Accordingly, the steam injection nozzle (1400) can uniformly spray steam over the entire surface of the wafer (W).

[0060] As another example, the steam injection nozzle (1400) may be ring-shaped. The ring-shaped steam injection nozzle (1400) has a circular ring-shaped body and refers to a structure in which a plurality of injection ports are formed along the inner or lower surface of the ring. The ring-shaped steam injection nozzle (1400) is positioned coaxially with the central axis of the wafer (W) and may have a diameter value smaller than the diameter of the wafer (W). In this case, the steam injection nozzle (1400) can radially inject steam from the center of the wafer (W) toward the outer part, thereby injecting steam at an angle inclined with respect to the surface of the wafer (W). Thus, the steam injection nozzle (1400) can ensure that steam reaches the entire wafer (W) uniformly.

[0061] A gas injection nozzle (1500) is positioned on the inner wall of the chamber (1100) and can inject purge gas toward the wafer (W). At this time, the purge gas may be an inert gas. For example, the purge gas may be nitrogen (N2), argon (Ar), helium (He), or a mixture thereof.

[0062] The nozzle of the gas injection nozzle (1500) may have a circular or slit shape. The gas injection nozzle (1500) can remove condensed gas formed on the surface of the wafer (W) by the steam injection nozzle (1400) from the wafer (W). Specifically, the gas injection nozzle (1500) can separate condensed gas containing contaminants from the surface of the wafer (W) by injecting purge gas at high speed. Preferably, the gas injection nozzle (1500) can inject purge gas at a speed of 20 m / s or more and 30 m / s or less.

[0063] Additionally, the gas injection nozzles (1500) may be arranged in multiple numbers along the inner wall of the chamber (1100). For example, the gas injection nozzles (1500) may be arranged at equal intervals along the circumferential direction of the chamber (1100). By doing so, the gas injection nozzles (1500) can uniformly spray purge gas onto the surface of the wafer (W). Thus, the efficiency of condensed gas escape can be increased, and the contaminant recovery rate can be improved.

[0064] The gas injection nozzle (1500) can be positioned to have a preset angle relative to the surface of the wafer (W). The preset angle may be 10 degrees or more and 15 degrees or less, but preferably 12 degrees. By doing so, the gas injection nozzle (1500) can cause the purge gas to effectively collide with the surface of the wafer (W) and guide the condensed gas toward the outer direction of the wafer (W).

[0065] The recovery unit (1600) is positioned spaced apart from the chuck (1200) to recover condensed gas containing contaminants that escape from the wafer (W). The recovery unit (1600) is positioned on the inner wall of the chamber (1100) and may be positioned above the chuck (1200). Specifically, the recovery unit (1600) may be positioned above the headspace of the chamber (1100). At this time, the headspace of the chamber (1100) is the space between the upper part of the chuck (1200) and the upper inner wall of the chamber inside the chamber (1100), and refers to an area where volatile substances or condensed gas generated during the process exist.

[0066] The recovery unit (1600) may include a plurality of recovery tubes (1610) to effectively collect condensed gas on the upper surface of the wafer (W). The plurality of recovery tubes (1610) may be arranged radially with respect to the center of the wafer (W). For example, three recovery tubes (1610) may be arranged at 120-degree intervals at a position 110 mm to 130 mm from the center of the wafer (W) toward the outer surface. By doing so, the recovery tubes (1610) can uniformly recover condensed gas containing contaminants. The condensed gas recovered by the recovery unit (1600) may be transferred to a collection device (2000). A detailed explanation of this will be provided in the collection device (2000) described later.

[0067] The motor (1700) can rotate the chuck (1200). Specifically, the motor (1700) may be positioned at the bottom of the chuck (1200). A shaft connected to the rotation axis of the motor (1700) may be formed on the lower surface of the chuck (1200). By rotating the chuck, the motor (1700) can cause steam and purge gas to effectively collide with the surface of the wafer (W). It is preferable for the motor (1700) to rotate the chuck (1200) at 90 rpm, but it is not necessarily limited thereto.

[0068] The collection device (2000) may include a connecting pipe (2100), a heating cable (2200), a check valve (2300), an orifice (2400), and a pump (2500). The connecting pipe (2100) may be connected to a recovery unit (1600). Thus, condensed gas recovered through a plurality of recovery pipes (1610) can be collected in the connecting pipe (2100).

[0069] A heating cable (2200) can be provided on the inner wall of the connecting pipe (2100). The heating cable (2200) can heat the inside of the connecting pipe (2100). Thus, the heating cable (2200) can prevent condensed gas from liquefying and becoming condensed water.

[0070] A check valve (2300) may be placed at the end of the connecting pipe (2100) that is closer to the recovery unit (1600). Thus, the check valve (2300) can prevent the condensed gas collected in the connecting pipe (2100) from flowing back and backflowing.

[0071] The orifice (2400) can be placed inside the connecting pipe (2100). The orifice (2400) can control the flow rate of the connecting pipe (2100). For example, the diameter of the orifice can be formed to be 0.5 mm to 0.8 mm. By doing so, the flow rate of the condensed gas can be secured to be 200 sccm to 300 sccm.

[0072] A pump (2500) can be connected to a connecting pipe (2100). The pump (2500) can provide suction power to enable the recovery unit (2100) to suck in condensed gas inside the chamber (1100). Additionally, a distribution manifold can be connected to the pump (2500). Thus, the recovered condensed gas can be distributed to a plurality of analysis devices (3000) through the distribution manifold. At this time, the analysis device (3000) may include at least one of a real-time detection module (3001), an ion chromatography detection module (3002), and an impinger (3003).

[0073] FIG. 3 is a top view of an extraction device according to an embodiment of the present invention.

[0074] Referring to FIG. 3, the extraction device (1000) according to an embodiment of the present invention may further include a gas curtain nozzle (1800).

[0075] The gas curtain nozzle (1800) is a circular ring shape positioned coaxially with the central axis of the wafer (W), and may have a diameter value larger than the diameter of the wafer (W). The gas curtain nozzle can spray inert gas along the outer surface of the wafer (W). For example, the inert gas may be nitrogen (N2), argon (Ar), helium (He), or a mixture thereof.

[0076] The gas curtain nozzle (1800) can prevent contaminants inside the chamber from reattaching to the surface of the wafer (W). Thus, the efficiency of contaminant extraction can be maximized. The velocity of the inert gas sprayed from the gas curtain nozzle (1800) may have a lower value than the velocity of the purge gas sprayed from the gas injection nozzle. The velocity of the inert gas is preferably 15 m / s or more and 25 m / s or less, but is not necessarily limited thereto.

[0077] FIG. 4 is an exemplary diagram showing the sequence of wafer surface contamination extraction according to an embodiment of the present invention.

[0078] Referring to FIG. 4, the steam injection nozzle (1400) and the gas injection nozzle (1500) can alternately inject steam and purge gas multiple times. Specifically, the process of the steam injection nozzle (1400) injecting steam to form a condensed gas in which contaminants and steam are combined on the surface of the wafer (W), and then the gas injection nozzle (1500) injecting purge gas to remove the condensed gas, can be repeated multiple times.

[0079] Accordingly, the condensed gas formed by the combination of steam and contaminants on the surface of the wafer (W) can have a thin thickness. Therefore, the present invention can further improve the recovery rate of contaminants on the surface of the wafer (W) by repeatedly forming a thin condensed gas on the surface of the wafer (W).

[0080] FIG. 5 is a flowchart of a method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention.

[0081] Since the method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention is performed using the wafer surface contaminant extraction and analysis device described above, detailed descriptions of redundant components are omitted for a clearer explanation.

[0082] A method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention may include a heating step (S10), a steam injection step (S30), a purge gas injection step (S50), a collection step (S70), and an analysis step (S90).

[0083] In the heating step (S10), the chuck (1200) supporting the wafer (W) can be heated by the heater (1300). The heater (1300) can be placed inside the chuck (1200). Thermal energy generated by the heater (1300) can be transferred to the wafer (W) through the chuck (1200).

[0084] In the steam injection step (S30), steam can be injected onto the wafer (W) by means of a steam injection nozzle (1400). Here, the steam can be generated by heating ultrapure water. It is preferable that the steam be injected for 5 seconds or more and 10 seconds or less, but it is not necessarily limited thereto.

[0085] In the purge gas injection step (S50), purge gas can be injected onto the wafer (W) by means of a gas injection nozzle (1500). Here, the purge gas refers to an inert gas. It is preferable that the purge gas be injected for 2 seconds or more and 5 seconds or less, but it is not necessarily limited thereto.

[0086] At this time, the steam injection step (S20) and the purge gas injection step (S30) can be performed alternately and repeatedly multiple times. Specifically, the process of the steam injection nozzle (1400) injecting steam to form a condensed gas film on the surface of the wafer (W) and the gas injection nozzle (1500) injecting purge gas to remove the condensed gas can be repeated multiple times.

[0087] Accordingly, the condensed gas formed by the combination of steam and contaminants on the surface of the wafer (W) can have a thin thickness. Therefore, the present invention can further improve the recovery rate of contaminants on the surface of the wafer (W) by repeatedly forming a thin condensed gas on the surface of the wafer (W).

[0088] In the recovery step (S50), condensed gas containing contaminants on the wafer surface can be recovered by the recovery unit (1600). The recovery unit (1600) may be positioned on the upper part of the chuck (1200) and may include a plurality of recovery pipes (1610). The condensed gas collected through the plurality of recovery pipes (1610) can be delivered to the collection device (2000).

[0089] In the collection step (S70), condensed gas can be collected by the collection device (2000). The collection device (2000) can be connected to the extraction device (1000). Specifically, the collection device (2000) can collect condensed gas containing contaminants extracted from the extraction device (1000).

[0090] In the analysis step (S90), the condensed gas can be analyzed by the analysis device (3000). At this time, the analysis device (3000) may include at least one of a real-time detection module (3001), an ion chromatography detection module (3002), and an impinger (3003).

[0091] FIG. 6 is an exemplary diagram of a method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention.

[0092] The method for extracting and analyzing wafer surface contaminants according to an embodiment of the present invention may further include a rotation step (S20). In the rotation step (S20), the chuck (1200) may be rotated by a motor. Accordingly, the steam injection step (S20) and the purge gas injection step (S30) described above may be performed while the chuck (1200) is rotating. At this time, the rotation speed of the chuck (1200) is preferably 90 rpm, but is not necessarily limited thereto.

[0093] Accordingly, by rotating the chuck (1200) by the motor (1700), steam and purge gas can be effectively collided with the surface of the wafer (W). By doing so, the extraction efficiency of the condensed gas can be improved.

[0094] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the disclosed content, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required for specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Additionally, the appended claims should be interpreted as including other embodiments. Explanation of the symbols

[0096] 1000: Extraction device 1100: Chamber 1200: Chuck 1300: Heater 1400: Steam spray nozzle 1500: Gas injection nozzle 1600: Recovery Unit 1700: Motor 1800: Gas curtain nozzle 2000: Collection device 2100: Connector 2200: Heating cable 2300: Check valve 2400: Orifice 2500: Pump 3000: Analysis device S10: Heating step S30: Steam injection stage S50: Purge gas injection stage S70: Collection stage S90: Analysis phase

Claims

Claim 1 An extraction device for extracting contaminants on the surface of a wafer by supplying steam and purge gas to the wafer; a collection device connected to the extraction device for collecting condensed gas containing the contaminants; and an analysis device for analyzing the condensed gas collected by the collection device, wherein the extraction device comprises: a chamber having an internal space; a chuck disposed in the internal space to support the wafer; a heater disposed inside the chuck to heat the chuck to a preset temperature; a steam injection nozzle disposed above the chuck to spray steam toward the wafer; a gas injection nozzle disposed on the inner wall of the chamber to spray purge gas toward the wafer; and a recovery unit disposed spaced apart from the chuck to recover condensed gas containing contaminants escaping from the wafer at the top of the headspace of the chamber, wherein the steam injection nozzle and the gas injection nozzle alternately spray the steam and the purge gas multiple times. Claim 2 In claim 1, the extraction device is a wafer surface contaminant extraction and analysis device provided in a plurality of units to process a plurality of wafers simultaneously. Claim 3 In claim 2, the gas injection nozzle is positioned to have a preset angle with respect to the wafer surface, forming a wafer surface contaminant extraction and analysis device. Claim 4 A wafer surface contaminant extraction and analysis device according to claim 3, wherein the steam injection nozzle is arranged coaxially with the central axis of the wafer and is in the shape of a circular ring having a diameter value smaller than the diameter of the wafer, and the extraction device further comprises a gas curtain nozzle arranged coaxially with the central axis of the wafer and having a diameter value larger than the diameter of the wafer. Claim 5 In claim 3, the analysis device comprises a real-time detection module that analyzes the condensed gas in real time using a laser, forming a wafer surface contaminant extraction and analysis device. Claim 6 In claim 3, the extraction and analysis device for wafer surface contaminants further comprises a motor disposed at the lower part of the chuck to rotate the chuck. Claim 7 A method for extracting and analyzing wafer surface contaminants, comprising the steps of: heating a chuck supporting a wafer by a heater; spraying steam onto the wafer by a steam injection nozzle; spraying purge gas onto the wafer by a gas injection nozzle; recovering condensed gas containing contaminants on the wafer surface by a recovery unit; collecting the condensed gas by a collection device; and analyzing the condensed gas by an analysis device, wherein the steps of spraying steam and spraying purge gas are performed alternately and repeatedly multiple times to improve the recovery efficiency of the condensed gas containing contaminants on the wafer surface. Claim 8 A method for extracting and analyzing wafer surface contaminants according to claim 7, further comprising the step of rotating the chuck by a motor.

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