Wafer processing unit

Abstract

A wafer processing device is provided capable of appropriately reducing load gas in exhaust gas by means of a reduction device. The wafer processing device comprises a wafer processing unit that supplies processing gas to a container and processes a wafer to be processed placed within the container, and is connected to a reduction device that performs reduction treatment to reduce load gas in exhaust gas discharged from the container, and a control device that controls the wafer processing unit and the reduction device. The reduction device has a function of operating by increasing or decreasing the amount of load gas reduced by reduction treatment according to a received command signal or a signal indicating a different amount of load gas. The control device transmits reduction operation information to the reduction device in advance to change the operating state of the reduction device to enable exhaust gas reduction treatment based on the wafer processing conditions in the wafer processing unit acquired in advance.

Description

Technology Field

[0001] The present disclosure relates to a wafer processing apparatus having at least one wafer processor for processing a substrate-shaped sample, such as a semiconductor wafer, placed in a processing chamber inside a container. More specifically, the invention relates to a wafer processing apparatus connected to a decontamination device having a function for reducing a certain gas that is included in the exhaust gas discharged from the wafer processor and has a large environmental burden. Background Technology

[0002] Representative examples of wafer processing devices for processing semiconductor wafers include, for instance, semiconductor manufacturing devices for manufacturing semiconductor devices. Semiconductor manufacturing devices may have at least one wafer processor for processing semiconductor wafers.

[0003] Each wafer processor is equipped with a vessel having a processing chamber in which a semiconductor wafer is placed. In each wafer processor, a processing gas is supplied to the semiconductor wafer in the processing chamber, said gas is excited or dissociated into a state such as plasma, and a film layer to be processed, which is pre-formed on the semiconductor wafer, is formed into a predetermined shape using a physical or chemical reaction.

[0004] In wafer processing equipment, such as semiconductor manufacturing devices, multiple types of gases suitable for processing the film layer to be processed are used. The gases used for processing are exhausted to the outside of the container by an exhaust device and are finally discharged to the outside of the building where the wafer processing equipment is installed.

[0005] However, exhaust gases emitted from wafer processing devices may contain certain gases, such as gases that pose a high burden on the human body or the environment, or harmful gases. Hereinafter, these certain gases containing gases that pose a high burden on the human body or the environment, or harmful gases, will also be referred to as "burden gases."

[0006] In this regard, it has been considered to connect a pollution control device equipped with the function of reducing or removing load gases contained in the exhaust gas to the wafer processing device. Accordingly, load gases contained in the exhaust gas discharged from the wafer processing device are discharged to the outside of the building after being reduced or removed by the pollution control device.

[0007] As for the technology of a decontamination device connected to a wafer processing device, for example, it is known to be described in Japanese Patent Publication No. 2016-080226 (Patent Document 1). Patent Document 1 describes burning exhaust gas using combustible fuel in an internal combustion chamber, heating it, and thermally decomposing it to render it harmless. In addition, Japanese Patent Publication No. 2003-120918 (Patent Document 2) discloses a technology in which a combustion gas (combustion gas) for burning the processing gas to be decontaminated is supplied to a decontamination device according to the amount of processing gas. Prior art literature

[0008] Japanese Patent Publication No. 2016-080226 and Japanese Patent Publication No. 2003-120918 The problem to be solved

[0009] In the processing of semiconductor wafers during semiconductor manufacturing, multiple processing steps are performed within a single wafer processing unit. In each process, the type or amount of gas used generally varies depending on the processing conditions. Therefore, the abatement device is required to combust the exhaust gas in such a way that the load gas, whose type or amount changes depending on factors such as time or duration, can be sufficiently reduced.

[0010] However, Patent Document 1 does not describe at all operation in accordance with fluctuations in the amount of exhaust gas supplied to the abatement device. Furthermore, although Patent Document 2 adjusts the supply amount of combustion gas according to the flow rate of the exhaust gas, which is the treatment gas, it does not describe means for controlling the operation of the abatement device to sufficiently reduce the load gas by following the change in the type or amount of load gas included in the exhaust gas.

[0011] Therefore, in the technology described in Patent Documents 1 and 2, when a process under different conditions is repeated in each of a plurality of wafer processors and the amount of load gas fluctuates over time, there is a concern that the load gas may not be sufficiently removed.

[0012] In addition, it is conceivable to solve the above problem by continuously applying an amount of thermal energy sufficient to sufficiently remove the maximum amount of load gas used for processing the assumed wafer to the exhaust gas for a predetermined period and burning it. However, in this case, a high amount of thermal energy is applied constantly for a predetermined period to burn the load gas, thereby increasing the operating cost of the wafer processing device.

[0013] The object of the present disclosure is to provide a wafer processing apparatus capable of appropriately reducing load gas in the exhaust gas by means of a removal device. means of solving the problem

[0014] A wafer processing device of the present disclosure comprises a wafer processing unit that supplies a processing gas to a container and processes a wafer to be processed placed within the container, a wafer processing unit connected to a decontamination device that performs decontamination treatment to reduce a load gas in the exhaust gas discharged from the container, and a control device that controls the wafer processing unit and the decontamination device. The decontamination device has a function of increasing or decreasing the amount of load gas reduced by the decontamination treatment according to a received command signal or a signal indicating a different amount of load gas. The control device transmits decontamination operation information directed toward the decontamination device in advance to change the operating state of the decontamination device to enable decontamination treatment of the exhaust gas based on the processing conditions of the wafer in the wafer processing unit acquired in advance. Effects of the invention

[0015] According to the present invention, a wafer processing device capable of more appropriately reducing load gas in exhaust gas can be provided. In addition, the operating cost of the wafer processing device can be reduced. Brief explanation of the drawing

[0016] FIG. 1 is a schematic diagram showing the overall configuration of a wafer processing device according to one embodiment. FIG. 2 is a cross-sectional view schematically showing an example of the configuration of a plasma etching device equipped with a wafer processor according to one embodiment. FIG. 3 is a block diagram showing the schematic configuration of a host computer, which is a control device according to one embodiment. Figure 4 is a graph showing the change in the amount of thermal energy required to remove load gas in the exhaust gas. Figure 5 is a graph showing another example of the change in the amount of thermal energy required to remove load gas in the exhaust gas. Figure 6 is a graph showing the total value of the required thermal energy amount and the change in the amount of input energy over time. Specific details for implementing the invention

[0017] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In addition, in principle, the same reference numerals are assigned to identical parts in the drawings, and repetitive descriptions are omitted. In the drawings, the representation of components may be schematically shown with respect to the width, thickness, shape, etc. of each part compared to the actual embodiment to facilitate understanding of the invention; however, this is merely an example and does not limit the interpretation of the present disclosure.

[0018] <Overall configuration of the wafer processing unit>

[0019] First, the overall configuration of the wafer processing device will be described. FIG. 1 is a schematic diagram showing the overall configuration of the wafer processing device according to the present embodiment.

[0020] As shown in FIG. 1, the wafer processing device (10) comprises a wafer processing unit (20) for processing wafers and a host computer (100) for controlling the operation of the wafer processing unit (20). Additionally, as an example, the wafer processing device (10) may have one wafer processing unit (20), but may also have multiple wafer processing units (20). In that case, the operation of multiple wafer processing units (20) may be controlled by a single host computer (100).

[0021] The wafer processing unit (20) is equipped with an atmosphere side block (30) and a vacuum side block (40). The atmosphere side block (30) is a part that transports a substrate-shaped sample, such as a semiconductor wafer, to be processed under atmospheric pressure, and determines a storage location. The vacuum side block (40) is a block that transports a substrate-shaped sample, such as a wafer, under pressure reduced from atmospheric pressure and performs processing within a predetermined vacuum processing chamber.

[0022] Waiting side block

[0023] The waiting side block (30) has a waiting return container (31), which is a roughly rectangular housing equipped with a waiting side return robot not shown, inside the waiting return room. Additionally, the waiting side block (30) has a plurality of FOUP stands (32) on the front side of the waiting return container (31). A FOUP (Front Opening Unify Pod) containing a substrate-shaped sample (hereinafter referred to as a wafer), such as a semiconductor wafer, to be processed or cleaned, is placed in the FOUP stand (32).

[0024] <Vacuum Side Block>

[0025] The vacuum side block (40) is a block that is connected to a container capable of maintaining a high vacuum pressure, and is a space in which the entire interior is maintained in a reduced pressure state. The vacuum side block (40) of the present disclosure is positioned behind the atmosphere side block (30) and is connected to the atmosphere side block (30). The vacuum side block (40) is provided with a plurality of vacuum transport containers (41A to 41C), each having a vacuum transport chamber inside which a wafer is transported. These plurality of vacuum transport containers (41A to 41C) may be collectively referred to as a vacuum transport container (41).

[0026] Each vacuum transport container (41) is connected in the front-rear direction of the wafer processing unit (20) with the interiors of multiple intermediate chambers (42A, 42B) (two in this embodiment) in which wafers are stored, separated by a plurality of intermediate chambers. The plurality of intermediate chambers (42A, 42B) may be collectively referred to as intermediate chambers (42). Furthermore, the front-rear direction of the wafer processing unit (20) is the direction in which the plurality of vacuum transport containers (41) are arranged in parallel, and is indicated as the X direction in FIG. 1. Additionally, the side of the air-side block (30) is referred to as the front direction, and the side of the vacuum-side block (40) is referred to as the rear direction. Furthermore, the direction perpendicular to the front-rear direction of the wafer processing unit (20) is referred to as the left-right direction, and is indicated as the Y direction in FIG. 1.

[0027] A vacuum transport container (41) having a vacuum transport chamber inside is a box-shaped vacuum container having a planar shape that can be considered rectangular or approximately rectangular. On the side walls of the vacuum transport container (41) in the front-rear direction (X direction) and left-right direction (Y direction) of the wafer processing unit (20), in addition to the intermediate chamber (42), other vacuum containers, such as a lock chamber (43) or multiple wafer processors (44), are connected. In other words, for each of the multiple vacuum transport containers (41), multiple (two in this embodiment) wafer processors (44) are each connected to two sides where the lock chamber (43) or intermediate chamber (42) is not connected.

[0028] More specifically, two wafer processors (44A, 44B) are connected to the left and right side walls of the vacuum transport container (41A). Two wafer processors (44C, 44D) are connected to the left and right side walls of the vacuum transport container (41B). Additionally, wafer processors (44E, 44F) are connected to the left and right side walls of the vacuum transport container (41C). Furthermore, these multiple wafer processors (44A to 44E) may be collectively referred to as wafer processors (44). Each wafer processor (44) has a reduced internal pressure, and in this reduced internal pressure, it processes wafers brought in through the vacuum transport container (41).

[0029] Additionally, each vacuum transport container (41) is a unit comprising a vacuum container having a planar shape that is approximately rectangular. Each vacuum transport container (41) has a vacuum transport chamber disposed therein. Vacuum transport robots (45A to 45C) are disposed therein within the vacuum transport chambers of the vacuum transport containers (41A to 41C).

[0030] The vacuum transfer robots (45A~45C) hold the wafer within the vacuum transfer chamber of each vacuum transfer container (41A~41C) and transfer the held wafer to the wafer processor (44A~44E), etc. Additionally, these vacuum transfer robots (45A~45C) are collectively referred to as vacuum transfer robots (45).

[0031] The vacuum conveyor robot (45), more specifically, carries a wafer on the tip of its arm and performs the loading and unloading of the wafer between the vacuum conveyor room and any of the wafer processor (44), the lock room (43), or the intermediate room (42). Additionally, although not shown, between the wafer processor (44), the lock room (43), the intermediate room (42), and the vacuum conveyor container (41), there is a gate, which is a passage through which the wafer is conveyed while being carried and maintained on the tip of the arm of the vacuum conveyor robot (45), and a gate valve capable of hermetically closing and opening the opening of each passage.

[0032] The intermediate room (42) is equipped with the function of a relay room in which a wafer is temporarily stored when a wafer is transferred between adjacent vacuum transport containers (41). For example, a wafer placed in the lock room (43) is transported by a vacuum transport robot (45A) placed in the vacuum transport container (41A) and stored in the intermediate room (42A). The wafer stored in the intermediate room (42A) is removed from the intermediate room (42B) by a vacuum transport robot (45B) placed in the vacuum transport container (41B) and is transported to a wafer processor (44A, 44B) connected to the vacuum transport container (41B) or to the intermediate room (42B).

[0033] The lock seal (43) is positioned at the foremost side of the vacuum side block (40), that is, at the closest position to the air side block (30). More specifically, the lock seal (43) is a sealed vacuum container positioned between the vacuum return container (41A) and the air return container (31) of the air side block (30).

[0034] The lock chamber (43) enables the transfer of wafers by changing the pressure between atmospheric pressure and vacuum pressure while holding the wafer inside, between the inside of an atmospheric transport container (31) which is at approximately atmospheric pressure and the inside of a vacuum transport container (41A) which is depressurized to a predetermined degree of vacuum. Additionally, at least one lock chamber (43) may be installed, but multiple lock chambers may be installed as needed.

[0035] Each wafer processor (44) is configured to include, as an example, a vacuum vessel, an electric field and magnetic field generating mechanism on the outside surrounding the upper and surrounding parts of the vessel, and an exhaust mechanism including a vacuum pump that exhausts the depressurized processing chamber inside the vessel. Then, etching, ashing, or other processing is performed on the wafer in the processing chamber inside the vacuum vessel. In addition, each of these wafer processors (44) is connected to a host computer (100) equipped with a wafer processing device (10) so as to be able to communicate through a communication path (101).

[0036] <Example of a wafer processor>

[0037] Next, an example of the configuration of a wafer processor (44) will be described. FIG. 2 is a cross-sectional view schematically showing an example of the configuration of a plasma etching device equipped with a wafer processor.

[0038] As shown in FIG. 2, the wafer processor (44) according to the present embodiment is equipped with a plasma etching device (440). The plasma etching device (440) uses a microwave electric field as an electric field for forming plasma, generates an Electron Cyclotron Resonance (ECR) between the microwave electric field and the magnetic field to form plasma, and uses the plasma to etch a substrate-shaped sample such as a semiconductor wafer.

[0039] A plasma etching device (440) has a container, for example, a vacuum container (442), which has a processing chamber (441) inside where plasma is formed. The processing chamber (441), which has a cylindrical shape at its top, is blocked by a dielectric window (443), for example, a disc-shaped dielectric window made of quartz. That is, the dielectric window (443) is installed as a cover member that blocks the top of the processing chamber (441) and forms part of the vacuum container (442). A sealing member is placed between the vacuum container (442) and the dielectric window (443) so that the airtightness of the inside of the vacuum container (442) or the processing chamber (441) is ensured.

[0040] Additionally, a shower plate (444) forming a circular ceiling surface of the processing room (441) is provided below the dielectric window (443). The shower plate (444) has a circular shape with a plurality of gas introduction holes (444a) arranged through the center, and gas for etching treatment is introduced into the processing room (441) through the gas introduction holes (444a). The shower plate (444) is composed of a dielectric material such as quartz.

[0041] An exhaust port (445) leading to a processing chamber (441) is formed at the bottom of the vacuum vessel (442). Additionally, a vacuum pump (446), such as a turbo molecular pump, is installed at the bottom of the processing chamber (441) to exhaust gas within the processing chamber (441) and to reduce pressure, and an exhaust volume control valve (447) is installed to control the flow rate or speed of the exhaust by increasing or decreasing the area of ​​the flow path. The exhaust port (445) of the vacuum vessel (442) is connected to the inlet of the vacuum pump (446) through the exhaust volume control valve (447). The outlet of the vacuum pump (446) is connected to the end of the exhaust pipe (50) shown in FIG. 1. The exhaust gas discharged from the outlet of the vacuum pump (446) is supplied to a decontamination device (60) described later through the exhaust pipe (50).

[0042] Above the vacuum vessel (442), an electric field and magnetic field generating unit (448) for forming an electric field and a magnetic field to generate plasma within the processing chamber (441) is disposed. The electric field and magnetic field generating unit (448) is equipped with a waveguide (449) and an electric field generating power source (450), and a high-frequency electric field oscillated from the electric field generating power source (450) is transmitted through the interior of the waveguide (449) and introduced into the processing chamber (441). As an example, the electric field generating power source (450) is a microwave power source, and for example, a microwave with a frequency of 2.45 GHz for the electric field formed is used.

[0043] A magnetic field generating coil (451) is disposed around the lower portion of the waveguide (449) and around the vacuum vessel (442), respectively. The magnetic field generating coil (451) is composed of an electromagnet and a yoke to which a direct current is supplied to form a magnetic field.

[0044] In the processing chamber (441), a wafer placement electrode (460) is disposed below the space where plasma is formed. The wafer placement electrode (460) has a cylindrical protrusion in the upper central portion, the upper surface of which is higher than the outer periphery, and a placement surface (460a) on which a wafer (Wf), which is a sample (to be processed), is placed on the upper surface of the protrusion. The wafer placement electrode (460) is disposed such that the placement surface (460a) faces the shower plate (444) or the dielectric window (443).

[0045] As an example, the wafer mounting electrode (460) comprises an electrode substrate (461), a dielectric film (462) installed on the electrode substrate (461), and a susceptor ring (463). The electrode substrate (461) has a protrusion (461a) and a concave portion (461b) surrounding it in the upper central portion. Although not illustrated, the protrusion (461a) of the electrode substrate (461) has a circular shape when viewed from a planar view and is located in the central portion of the electrode substrate (461). The concave portion (461b) is formed in a ring shape around the protrusion (461a) when viewed from a planar view. The upper surface of this protrusion (461a) constitutes the mounting surface (460a) of the wafer mounting electrode (460). Additionally, the surface of the protrusion (461a) is covered by a dielectric film (462).

[0046] Inside the dielectric film (462), a conductive film (464), which is a plurality of conductive films, is disposed. The conductive film (464) is connected to a DC power source (466) through a high-frequency filter (465). When DC power is supplied to the conductive film (464), a wafer (Wf) is adsorbed onto the mounting surface (460a) through the dielectric film (462) on the conductive film (464). The conductive film (464) is an electrode for electrostatic adsorption.

[0047] The electrode substrate (461) is connected to a high-frequency power source (468) through a matching device (467). These high-frequency power sources (468) and the matching device (467) are positioned closer than the distance between the high-frequency filter (465) and the conductive film (464). Additionally, the high-frequency power source (RF power source) (468) is grounded.

[0048] During the processing of the wafer (Wf), high-frequency power of a predetermined frequency is supplied to the electrode substrate (461) (i.e., sample base) from at least one high-frequency power source (RF power source) (468) or a plurality of high-frequency power sources (468). Then, a bias potential is formed above the wafer (Wf) that is adsorbed and maintained on the mounting surface (460a) through the dielectric film (462), having a distribution according to the difference between the potential of the plasma and the potential of the electrode substrate (461).

[0049] Additionally, the interior of the electrode substrate (461) is provided with multiple refrigerant flow paths arranged in a spiral or concentric shape around the central axis in the vertical direction of the electrode substrate (461) to cool the wafer mounting electrode (460), although the illustration is omitted. The inlet and outlet of the refrigerant flow paths provided by the electrode substrate (461) are connected by a temperature controller that adjusts the temperature of the refrigerant and a conduit. The refrigerant, whose temperature has changed by heat exchange while flowing through the refrigerant flow path provided by the electrode substrate (461), reaches a predetermined temperature range through the flow path inside the temperature controller and is then supplied back to the refrigerant flow path of the electrode substrate (461).

[0050] A ring-shaped susceptor ring (463) surrounding a protrusion (461a) is provided in the concave portion (461b) of the electrode substrate (461). The susceptor ring (463) is composed of at least one member made of a dielectric material, such as ceramics, such as quartz or alumina. Since the side surface of the protrusion (461a) and the bottom surface of the concave portion (461b) of the electrode substrate (461) are covered by at least the susceptor ring (463), the electrode substrate (461) can be prevented from being damaged by plasma.

[0051] In a plasma etching apparatus (440) of this configuration, a processing gas is introduced into the processing chamber (441) through the gas introduction hole (444a) of the shower plate (444), and microwaves are generated from a power source (450) for generating an electric field. The electric field of the microwaves passes through the dielectric window (443) and the shower plate (444) and is supplied to the processing chamber (441) from the top downward. Additionally, a magnetic field generated by a direct current supplied to a magnetic field generating coil (451) is supplied into the processing chamber (441) and interacts with the electric field of the microwaves to generate Electron Cyclotron Resonance (ECR). Due to the ECR, atoms or molecules of the processing gas are excited, dissociated, or ionized, and a high-density plasma is generated within the processing chamber (441).

[0052] Additionally, the processing gas is supplied to the plasma etching device (440) through a pipe (470) from a gas supply source located below the floor surface of the building where the plasma etching device (440) is installed. A gas supply source is installed for each type of gas. A pipe (470) extends from the gas supply source for each type of gas. An integrated gas box (471) is arranged in the middle of the pipe (470). Inside the integrated gas box (471), a plurality of pipes (470) and a mass flow controller (MFC) (472) that controls the flow rate or speed of each type of gas are arranged. The plurality of pipes (470) are integrated into a plurality of gas supply pipes (474) inside the integrated gas box (471) and extend to the outside of the integrated gas box (471).

[0053] And, the processing gas is introduced through this gas supply pipe (474) (piping (470)) into the gap between the dielectric window (443) and the shower plate (444) and diffused into the processing chamber (441). The flow of the processing gas supplied into the processing chamber (441) through the gas introduction hole (444a) is controlled by an opening / closing valve (475) placed in the gas supply pipe (474).

[0054] In addition, as a processing gas, for example, a reactive gas having reactivity with the film to be processed on the upper surface of the wafer, or a reactive gas that has reactivity generated inside the plasma is used. In addition, as a processing gas, for example, a mixed gas including such a reactive gas and an inert gas that dilutes the reactive gas is used. The processing of the wafer in each wafer processor (44) including the plasma etching device (440) has multiple processes in which the processing gas is used under different conditions. And among the processing gases used in each process, a load gas is included as described above.

[0055] Additionally, the wafer processor (44) is equipped with a controller (480) for controlling the plasma etching device (440). As shown in FIG. 2, a plurality of devices constituting the plasma etching device (440), such as a power source for generating an electric field (450), a magnetic field generating coil (451), a high-frequency power source (468), a high-frequency filter (465), a DC power source (466), and a matching device (467), are connected to the controller (480) so as to communicate via wired or wireless means. The operation of each device constituting the plasma etching device (440) is appropriately controlled through the controller (480).

[0056] The controller (480) has an interface between a memory unit having a CPU or similar processing unit, an HDD, and memory, and an external communication means via wired or wireless connection, and has a configuration in which they are connected to communicate via wired or wireless connection. The controller (480) is connected to a host computer (100) equipped with a wafer processing device (10) via a communication path (101) to communicate with the host computer (100), and transmits operation status information indicating the operation status of each device constituting the plasma etching device (440) to the host computer (100). In other words, the wafer processor (44) transmits operation status information indicating the operation status of each device of the wafer processor (44), such as operation or the presence or absence of an error, to the host computer (100).

[0057] Additionally, as will be described in detail later, the host computer (100) transmits processing information (processing recipe) including processing conditions for the wafer and command signals, etc., to the wafer processor (44) (controller (480)). The controller (480) receives the processing information and commands and appropriately controls the operation of each device of the plasma etching device (440) based on the processing information and commands. In other words, each device of each wafer processor (44) is appropriately controlled according to the processing information or commands transmitted from the host computer (100), for example.

[0058] <Disaster Prevention Device and Exhaust Pipe>

[0059] Each wafer processor (44) equipped in the wafer processing unit (20) is connected to the exhaust device (60) through the exhaust pipe (50) as described above (see FIG. 1). As an example, the wafer processor (44) is equipped with a plasma etching device (440), and the exhaust pipe (50) is connected to the exhaust mechanism of the plasma etching device (440). More specifically, the exhaust pipe (50) is connected to the outlet of a vacuum pump (446) positioned at the bottom of the plasma etching device (440) and forms the exhaust path of the wafer processing unit (20).

[0060] The exhaust gas exhausted from the plasma etching device (440) is transported to the outside of the wafer processing unit (20) through the inside of the exhaust pipe (50). The exhaust gas includes processing gas supplied to the processing chamber (441) of the vacuum vessel (442) of the plasma etching device (440) and used for processing the wafer, or waste gas that is exhausted without being supplied to the processing chamber.

[0061] In this embodiment, the downstream end of the exhaust pipe (50) in the direction of exhaust gas flow is connected to a decontamination device (60). Exhaust gas discharged from the wafer processing unit (20) is supplied to the decontamination device (60) through the exhaust pipe (50). The decontamination device (60) has the function of heating the load gas contained in the exhaust gas, applying thermal energy, and decomposing it to reduce or eliminate the load or harmfulness to the environment.

[0062] In the wafer processing device (10) of the present example, a plurality of exhaust pipes (50) connected to each exhaust mechanism of a plurality (six in FIG. 1) of wafer processing units (20) have their downstream ends in the direction of flow of exhaust gas flowing inside them connected to the downstream ends of other exhaust pipes (50) and connected to a single exhaust pipe (50') formed by the assembly of the plurality of exhaust pipes (50). The lower end of the downstream end of this exhaust pipe (50') is connected to a decontamination device (60). With this configuration, the exhaust gas flowing through each exhaust pipe (50) is combined and supplied to the decontamination device (60).

[0063] As an example, the extinguishing device (60) is provided with a combustion vessel inside and introduces exhaust gas containing a load gas into a combustion chamber within the combustion vessel to ignite it, or introduces a combustible gas together with the exhaust gas into the combustion chamber to ignite it. In addition, the load gas refers to a specific type of gas among the types of gases included in the exhaust gas that has a high load on the environment, or is considered to be harmful to the human body or the environment, as described above.

[0064] In this way, as the load gas is heated and decomposed, the amount of load gas in the exhaust gas is reduced. In other words, as the load gas is heated and decomposed, the load or harmfulness of the exhaust gas is reduced. Furthermore, the process of decomposing the load gas in the exhaust gas to the extent that the load on the environment or the harmfulness to the human body or the environment is sufficiently reduced is called decomposition treatment. In addition, the operation of the decomposition device (60) that performs decomposition treatment is called decomposition operation.

[0065] The exhaust pipe (50) and the exhaust pipe (50') are positioned below the floor surface of the building where the wafer processing unit (20) is installed, one end of which is connected to the exhaust mechanism of the plasma etching device (440), and the other end of which is connected to the decontamination device (60). The decontamination device (60) is positioned in another space below the floor surface of the building where the wafer processing unit (20) is installed. Then, the exhaust gas discharged from the wafer processing unit (20) is supplied to the decontamination device (60) through the exhaust pipe (50), the load gas is heated and decomposed within the combustion vessel, and is exhausted to the outside of the building through an exhaust path not shown.

[0066] In addition, in this embodiment, an exhaust gas sensor (61) is positioned on the exhaust pipe (50'). The exhaust gas sensor (61) operates during a period when at least one of the wafer processing units (20) of the wafer processing device (10) is in operation, or at least during a period when it is determined that exhaust gas containing load gas is flowing inside the exhaust pipe (50'), to detect the exhaust gas and detect the type, component, ratio, concentration, etc. of the gas contained in the exhaust gas. In addition, in this example, the exhaust gas sensor (61) is positioned to detect the exhaust gas along the path of the exhaust pipe (50').

[0067] The exhaust gas sensor (61) may be positioned upstream of the exhaust mechanism of the wafer processing unit (20) to which the exhaust pipe (50) is connected, or on the exhaust mechanism of each wafer processing unit (20), with respect to the direction of flow of exhaust gas from the connection (combination) of another exhaust pipe of any exhaust pipe (50). In this case, the exhaust gas containing load gas discharged from each wafer processing unit (20) flows through the exhaust mechanism or exhaust pipe (50) connected to each, and is detected by the gas sensor (61) configured to detect the exhaust gas within the path or within the path, and information such as the type, component, and composition of the gas is detected.

[0068] Here, the abatement device (60) according to the present embodiment has a function of increasing or decreasing the amount of load gas in the exhaust gas by abatement treatment according to a received command signal or a signal indicating a different amount of load gas. More specifically, the abatement device (60) has the following functions according to a received command signal or a signal indicating a different amount of load gas.

[0069] The exhaust gas removal device (60) is operated by increasing the amount of exhaust gas reduced by the removal process so that the exhaust gas can be removed when the amount of load gas in the exhaust gas increases in accordance with changes in the processing conditions of the wafer in each wafer processor (44). Specifically, the exhaust gas removal device (60) is operated by increasing the amount of thermal energy (heating amount) applied to the load gas compared to the current state. In other words, the exhaust gas removal device (60) changes the operating state to a state where the heating or amount of thermal energy applied to the load gas is increased compared to the current state.

[0070] Meanwhile, when the amount of load gas in the exhaust gas decreases in accordance with changes in the processing conditions of the wafer in each wafer processor (44), the abatement device (60) reduces the amount of load gas in the exhaust gas by abatement treatment so that the exhaust gas can be abatement treated. As an example, the abatement device (60) operates by reducing the amount of thermal energy (heating amount) applied to the load gas compared to the current state. In other words, the abatement device (60) changes the operating state to a state in which the amount of thermal energy applied to the load gas is reduced within a range where the exhaust gas can be abatement treated.

[0071] In this way, the abatement device (60) is equipped with a function to increase or decrease the amount of load gas in the exhaust gas that is reduced by abatement treatment. Accordingly, the operating state of the abatement device (60) is appropriately changed according to the amount of load gas. Therefore, the load gas in the exhaust gas can be sufficiently reduced by abatement treatment, and the operating cost of the abatement device (60) can be reduced. As a result, the operating cost of the wafer processing device (10) can be reduced. Furthermore, as will be described in detail later, the control of the operating state of the abatement device (60) is performed based on abatement operation information (also called a signal indicating abatement operation information) transmitted from a host computer (100), which is a control device, as an example.

[0072] Host Computer

[0073] As described above, the wafer processing device (10) is equipped with a host computer (100), which is a control device for controlling the operation of each device of the wafer processing unit (20). FIG. 3 is a block diagram showing the schematic configuration of the host computer, which is a control device according to the present embodiment. As shown in FIG. 3, the host computer (100) is connected to each part of the wafer processing unit (20), which includes, for example, each wafer processor (44) and each device constituting the same, so as to be able to transmit and receive data or signals maintained by each through a communication path (101). The plasma etching device (440) equipped by each wafer processor (44) is controlled based on command signals transmitted from the host computer (100).

[0074] Additionally, the host computer (100) is also connected to the dismantling device (60) via a communication path (101). The host computer (100) is configured to enable the exchange of data or signals maintained by each through the communication path (101) between the wafer processing unit (20) and the dismantling device (60). The operation of the dismantling device (60) is also controlled based on command signals transmitted from the host computer (100).

[0075] The exhaust gas sensor (61) described above has the function of communicating with a host computer (100), and the exhaust gas sensor (61) can transmit data such as the components and concentration of the exhaust gas, including the load gas detected from the result of detecting the exhaust gas, to the host computer (100). In addition, it may be equipped with the function of calculating information (operation information) necessary for operation to reduce or remove the load gas of the exhaust gas removal device (60) using the information detected regarding the exhaust gas, and transmitting said operation information to the host computer (100).

[0076] Alternatively, a signal as a result of the exhaust gas sensor (61) detecting the exhaust gas is transmitted to the host computer (100), and the receiving host computer (100) is configured to detect information such as the type of gas, components, ratios, and concentrations of the load gas, or furthermore, the operating information of the exhaust gas removal device (60) may be detected by the host computer (100) from said information. Alternatively, the operating information detected by the exhaust gas sensor (61) or the detection result of the exhaust gas including the load gas may be transmitted from the exhaust gas sensor (61) to the exhaust gas removal device (60).

[0077] The host computer (100) has a wafer processing control unit (110) and a wafer processing control unit (120). The wafer processing control unit (110) controls the operation of each device of the wafer processing unit (20). More specifically, it acquires processing information (processing recipe) including processing conditions of a wafer in the wafer processing unit (20) or operating conditions of each device constituting the wafer processing unit (20), and transmits this processing information to the wafer processing unit (20). In addition, the wafer processing control unit (110) receives information indicating the operating status, such as the presence or absence of operation or errors, transmitted from each device of the wafer processing unit (20). In addition, the wafer processing control unit (110) transmits command signals, etc., to the wafer processing unit (20) as needed to adjust processing conditions or operating conditions.

[0078] The wafer processing control unit (110) acquires the processing information stored in advance in the host computer (100), as an example, and transmits the acquired processing information and the command signal to the controller (480) of each plasma etching device (440) equipped by each wafer processor (44). The controller (480) appropriately controls the operation of the plasma etching device (440) based on the received processing information or command signal.

[0079] Here, the processing information may include information on the processing gas and waste gas supplied to the processing chamber (441) of the plasma etching device (440) (hereinafter also referred to as gas information). In addition, the gas information may include information such as the flow rate per unit time of the processing gas or waste gas supplied to the processing chamber (441) during the wafer processing performed in the plasma etching device (440), or the supply amount throughout the entire wafer processing process. In addition, the gas information may include physical information of the load gas, such as the flow rate per unit time of the load gas in the exhaust gas, the composition of the load gas, the molecular weight and density of the components, and the activation energy or reaction heat for each component of the load gas.

[0080] In addition, the above processing information may include condition information for aeration operation based on gas information. As for condition information for aeration operation, for example, the amount of thermal energy required to be applied to the exhaust gas for the aeration device (60) to realize aeration treatment of the load gas. In addition, as for condition information for aeration treatment, for example, the time of aeration operation, or the ratio of the value of the amount of thermal energy input by aeration treatment to the maximum value of the amount of thermal energy that can be input by the aeration device (60).

[0081] Meanwhile, the decontamination processing control unit (120) controls the operating state of the decontamination device (60). As an example, the decontamination processing control unit (120) transmits decontamination operation information, including conditions for decontamination processing to be performed during a predetermined period from a predetermined time, to the decontamination device (60) at a predetermined timing.

[0082] More specifically, the waste treatment control unit (120) can acquire the processing information, including the processing conditions of the wafer in each wafer processor (44), in advance before the processing under those conditions begins. Additionally, the waste treatment control unit (120) can detect, based on the signal output from the exhaust gas sensor (61), information on the exhaust gas, such as the type of gas, components, or ratio thereof, of the exhaust gas including the load gas discharged by each wafer processor (44) during the processing of the wafer, and whether there is a change, such as an increase or decrease, in the parameters appearing in this information.

[0083] Alternatively, the abatement control unit (120) may calculate abatement operation information including conditions for abatement treatment from the treatment information and exhaust gas information related to the load gas, and transmit it to the abatement device (60) for a predetermined amount of time before the exhaust gas with the change reaches the abatement device (60). In addition, the gas information may be acquired separately from the treatment information, or it may be included in the treatment information as described above.

[0084] Information and data regarding exhaust gas, such as the type and composition of the exhaust gas, detected by an exhaust gas sensor (61) placed on an exhaust device or an exhaust pipe (50) connected thereto, may be transmitted to a decontamination processing control unit (120), but may also be transmitted to a host computer (100) for data and information output from the received exhaust gas sensor (61). In addition, decontamination operation information of a decontamination device (60) calculated using the information and data may also be transmitted to a host computer (100) or a decontamination device (60).

[0085] And, the abatement control unit (120) transmits the calculated abatement operation information to the abatement device (60) at a predetermined time or timing. In addition, abatement operation information refers to information for the abatement device (60) to realize abatement treatment that sufficiently removes load gas in the exhaust gas, or information that contributes to the execution of abatement treatment.

[0086] When the abatement operation information transmitted from the abatement processing control unit (120) is received by the abatement device (60), for example, a controller equipped in the abatement device (60) calculates an operation command (a signal indicating an operation command) based on the abatement operation information and outputs this operation command to each device of the abatement device (60). By doing so, the state of the abatement operation (i.e., the operating state) of the abatement device (60) is appropriately adjusted so that the load gas in the exhaust gas can be sufficiently reduced. In other words, the controller equipped in the abatement device (60) appropriately controls the operating state of the abatement device (60) based on the abatement operation information so that the load gas in the exhaust gas can be sufficiently reduced.

[0087] In addition, in this embodiment, the case where the processing information is stored in advance in the host computer (100) is described, but the processing information may be stored in advance in, for example, the wafer processing unit (20).

[0088] In this case, the decompression processing control unit (120) receives the processing information transmitted from the wafer processing unit (20) or the exhaust gas sensor (61) and calculates decompression operation information based on this processing information. After that, the decompression processing control unit (120) transmits the decompression operation information to the decompression device (60) at a predetermined time or timing. Alternatively, the decompression processing control unit (120) may transmit decompression operation information at a target time based on data or information maintained or stored internally to the decompression device (60) when it receives a permission command (a signal indicating a permission command), etc., transmitted from the wafer processing unit (20) at a predetermined time or timing during the operation period in which the wafer processing device (10) operates to manufacture a semiconductor device.

[0089] Additionally, the wafer processing unit (20) may directly transmit the processing information to the abatement device (60), and a controller including a calculator provided by the abatement device (60) may calculate abatement operation information based on this processing information and adjust the operation state of the abatement device (60).

[0090] Additionally, the wafer processing unit (20) may use a controller including a computational unit provided within itself to calculate exhaust gas operation information based on exhaust gas information or processing information from the exhaust gas sensor (61) and directly transmit this exhaust gas operation information to the exhaust device (60). In this case, the controller (480) provided by each wafer processor (44) may calculate the exhaust gas operation information, but for example, the wafer processing unit (20) may be provided with an overall controller that is communically connected to a plurality of wafer processors (44) (controller (480)). And, this overall controller may calculate the exhaust gas operation information based on processing information as described above and transmit the exhaust gas processing information to the exhaust device (60).

[0091] In addition, when the controller of the wafer processing unit (20) calculates the operation information for the operation of

[0092] Additionally, when the wafer processing unit (20) transmits control operation information to the host computer (100), the control processing control unit (120) of the host computer (100) may calculate an operation command (command signal) indicating the conditions for the control operation of the control device (60) based on the control operation information, and transmit the calculated operation command to the control device (60). The operation command is calculated according to a predetermined algorithm based on the control operation information. In this case, the operation command calculated by the control processing control unit (120) is included in one of the control operation information. Additionally, the processing information used to calculate the operation command is also included in one of the control operation information.

[0093] For example, the abatement operation information includes information regarding the amount of load gas that increases or decreases, or an operation command to change the operating state of the abatement device (60) to allow the abatement of an increased or decreased amount of load gas. In addition, in this case, the abatement processing control unit (120) transmits abatement operation information toward the abatement device (60) so that the operating state of the abatement device (60) is changed before the processing of the wafer performed under the processing conditions obtained in advance. In addition, when changing the operating state of the abatement processing based on exhaust gas information obtained from the exhaust gas sensor (61), abatement operation information toward the abatement device (60) is transmitted so that the operating state of the abatement device (60) is changed before the exhaust gas related to the exhaust gas information reaches the abatement device (60).

[0094] <Operation of the Wafer Processing Unit during Wafer Processing>

[0095] Here, the operation of the wafer processing unit (20) during wafer processing is described. The wafer processing unit (20) receives the processing information, etc. described above from the wafer processing control unit (110) of the host computer (100), and upon receiving this processing information, etc., it starts processing the wafer.

[0096] When the processing of the wafer begins, first, the wafer contained within the FOUP mounted on the FOUP stand (32) shown in FIG. 1 is removed by an unillustrated stand-side transport robot, and the removed wafer is transported to the lock room (43).

[0097] In the lock room (43) where the wafer is returned and stored, the valve is closed and sealed while the returned wafer is contained, and the pressure is reduced to a predetermined pressure. After that, the valve on the side of the lock room (43) facing the vacuum return container (41A) is opened, and the lock room (43) and the vacuum return container (41A) are connected.

[0098] The vacuum transport robot (45A) extends its arm into the lock chamber (43), receives the wafer inside the lock chamber (43) onto the wafer support at the tip of the arm, and transports it into the vacuum transport container (41A). Additionally, the vacuum transport robot (45A) transports the wafer loaded on its arm along a predetermined transport path to either a wafer processor (44A, 44B) or an intermediate chamber (42A) connected to the vacuum transport container (41A).

[0099] For example, a wafer brought into the intermediate room (42A) is then transferred from the intermediate room (42A) to the vacuum transfer container (41B) by a vacuum transfer robot (45B) equipped in the vacuum transfer container (41B), and is brought into either the wafer processor (44C, 44D) or the intermediate room (42B) along a predetermined transfer path.

[0100] Additionally, for example, a wafer brought into the intermediate chamber (42B) is then transferred from the intermediate chamber (42B) to the vacuum transfer container (41C) by a vacuum transfer robot (45C) equipped in the vacuum transfer container (41C), and is brought into either the wafer processor (44E) or the wafer processor (44E) along a predetermined transfer path. As an example, the wafer being transferred to each wafer processor (44) is brought into the vacuum container (442) (processing chamber (441)) of the plasma etching device (440).

[0101] Additionally, in this embodiment, each of the above valves is opened and closed exclusively. For example, when a wafer is brought into the intermediate chamber (42B), the intermediate chamber (42B) is sealed by closing the valve that opens and closes between the intermediate chamber (42B) and the vacuum transport container (41B). Then, the valve that opens and closes between the intermediate chamber (42B) and the vacuum transport container (41C) is opened, and the vacuum transport robot (45C) equipped in the vacuum transport container (41C) is extended to transport the wafer into the vacuum transport container (41C). The vacuum transport robot (45C) transports the wafer loaded on its arm to either a predetermined wafer processor (44E) or a wafer processor (44F).

[0102] Additionally, for example, when a wafer is returned to the wafer processor (44E), a valve that opens and closes between the wafer processor (44E) and the vacuum return container (41C) is closed, and the wafer processor (44E) is sealed. Then, a processing gas is introduced into the wafer processor (44E), in this embodiment, into the processing chamber (441) of the plasma etching device (440), and the pressure inside the processing chamber (441) is adjusted to a pressure suitable for processing. Then, an electric field or a magnetic field is supplied to the processing chamber (441), thereby exciting the processing gas to form plasma inside the processing chamber (441), and the wafer is processed under predetermined processing conditions.

[0103] In this way, when a wafer is processed by a plasma etching device (440) constituting a wafer processor (44), exhaust gas is supplied from the processing room (441) to a decontamination device (60) through an exhaust pipe (50). As will be described in detail later, decontamination of this exhaust gas is performed by the decontamination device (60). In other words, when exhaust gas is supplied through the exhaust pipe (50), the decontamination device (60) performs a decontamination operation to decontaminate the exhaust gas.

[0104] When the processing of the wafer is finished, the vacuum transport robot (45C) takes the processed wafer into the vacuum transport container (41C) and transports the wafer to the lock room (43) via a transport path that is reversed from when the wafer was brought into the wafer processor (44E). After that, the wafer is transported from the lock room (43) back into the original FOUP by an air-side transport robot not shown.

[0105] Regarding disaster relief

[0106] Next, a specific example of exhaust gas removal treatment by a removal device (60) connected to a wafer processing device according to the present embodiment, in particular, a change in the setting of the amount of thermal energy, will be described.

[0107] As described above, the abatement device (60) performs abatement of exhaust gas supplied through the exhaust pipe (50) when the wafer is processed by the plasma etching device (440). The abatement device (60) is equipped with a function to increase or decrease the amount of load gas reduced by abatement based on abatement operation information. In other words, the abatement device (60) is equipped with a function to change the operating state according to the change in the amount of load gas in the exhaust gas based on abatement operation information, for example, a function to change the conditions of abatement treatment. The amount of load gas in the exhaust gas is calculated, for example, based on the above processing information.

[0108] In this embodiment, the change in the operating state of the abatement device (60) is controlled based on abatement operation information transmitted from the abatement processing control unit (120) of the host computer (100).

[0109] More specifically, the abatement control unit (120) transmits abatement operation information to the abatement device (60) in advance to change the operating state of the abatement device (60) to enable abatement of exhaust gas, based on the processing information obtained in advance or exhaust gas information obtained from the output of the exhaust gas sensor (61). Furthermore, transmitting the abatement operation information to the abatement device (60) in advance means, for example, transmitting the abatement operation information to the abatement device (60) before the processing of the wafer under the processing conditions in the wafer processing unit (20) begins, or transmitting it for a predetermined amount of time before the exhaust gas related to the exhaust gas information obtained by the exhaust gas sensor (61) reaches the abatement device (60).

[0110] When the abatement device (60) receives abatement operation information transmitted by the abatement processing control unit (120), it changes the operating state based on this abatement operation information to abatement operation according to the change (increase or decrease) in the amount of load gas in the exhaust gas. In other words, when the abatement device (60) receives abatement operation information, it performs a setting change to increase or decrease the amount of thermal energy applied to the load gas in the exhaust gas during abatement processing according to the change in the amount of load gas in the exhaust gas over time.

[0111] Here, the change in the amount of thermal energy required to remove load gas in the exhaust gas is explained with reference to Fig. 4. Fig. 4 is a graph showing the change in the amount of thermal energy required to remove load gas in the exhaust gas, where the vertical axis represents the amount of thermal energy and the horizontal axis represents time.

[0112] In addition, the amount of thermal energy required to be applied to the load gas in the exhaust gas for waste treatment shows a similar change in accordance with the change in the flow rate of the load gas. That is, the graph in Fig. 4 can be said to be a graph showing the trend of the change in the flow rate of the load gas.

[0113] FIG. 4 shows the amount of thermal energy required for the removal process when exhaust gas is supplied from a plasma etching device (440) constituting three wafer processors (44) to a removal device (60). More specifically, FIG. 4 shows the values ​​of the amount of thermal energy (heating amount) required to remove the load gas contained in the exhaust gas of each of the three plasma etching devices (440) as three types of lines, namely a first value (501), a second value (502), and a third value (503). Specifically, the first value (501) is represented by a relatively thick dotted line, the second value (502) by a relatively thick dashed line, and the third value (503) by a dotted line. Additionally, the sum of these first value (501), second value (502), and third value (503) is represented as a fourth value (504) by a solid line in the drawing.

[0114] Depending on the processing of the wafer performed in each wafer processor (44) (plasma etching device (440)), processing conditions such as the type of processing gas used, flow rate, and usage period change. In the case of the present example, the amount of load gas in the exhaust gas of each wafer processor (44) changes in a step-like manner. In other words, the amount of load gas in the exhaust gas repeats fluctuations such as, for example, becoming a constant value for a certain period, then becoming a different constant value for another period, or returning to a value of 0.

[0115] For this reason, the trajectory of the value of the amount of thermal energy required to remove the load gas in the exhaust gas discharged from each plasma etching device (440) (hereinafter also referred to as the required amount of thermal energy value), that is, the trajectory of the first value (501), the second value (502), and the third value (503), also fluctuates in the same way over time. Naturally, the fourth value (504), which is the value of the amount of thermal energy required to remove the sum (total) of the load gas in the exhaust gas of the plasma etching device (440) (hereinafter also referred to as the required amount of thermal energy total value), also shows a fluctuation similar to that of the value of the sum (total) of the load gas included in the exhaust gas discharged from each plasma etching device (440).

[0116] More specifically, the fourth value (504), which is the total value of thermal energy shown as a solid line in FIG. 4, is the trajectory of the total value of thermal energy during any period of processing, and like the first value (501), second value (502), and third value (503), which are the required value of thermal energy, it fluctuates in a step shape with the passage of time (horizontal axis). The fourth value (504) at each time point almost corresponds to the sum of the first value (501), second value (502), and third value (503) at each time point.

[0117] Then, when the abatement device (60) receives abatement operation information, it appropriately sets the value of the amount of thermal energy applied to and supplied to the load gas in the exhaust gas during abatement treatment (hereinafter also referred to as the input energy amount value) based on the received abatement operation information. In FIG. 4, this input energy amount value is shown as a fifth value (505) with a relatively thin dashed line. The abatement device (60) sets this input energy amount value, the fifth value (505), to a value that allows the load gas in the exhaust gas to be treated by abatement, ranging from a value of 0 to a sixth value (506) (shown as a relatively thin dashed line in FIG. 4), which is the maximum value of thermal energy that the abatement device (60) can input. In other words, the abatement device (60), based on abatement operation information, sets the fifth value (505), which is the input energy amount value, to be greater than or equal to the fourth value (504) during a predetermined period (△T), and to be a value smaller than or equal to the sixth value (506).

[0118] In this embodiment, during a predetermined period (△T) in the wafer processing unit (20) for wafer processing, the input energy amount value of the abatement device (60) is set so that the operating load rate is less than 100%. The operating load rate referred to here is the ratio of the input energy amount value (5th value (505)) that is set to be changed to the maximum value of the thermal energy amount (6th value (506)) that the abatement device (60) can input.

[0119] In addition, in this embodiment, the abatement device (60) sets a value as an input energy amount value (5th value (505)) during a predetermined period (△T) based on abatement operation information, by adding a thermal energy amount (△Eg) as a safety margin to the total value of the required thermal energy amount (4th value (504)) during a predetermined period (△T).

[0120] More specifically, as shown in FIG. 4, the fourth value (504), which is the total value of thermal energy during a predetermined period (△T) in the process of decomposition, increases and decreases in a step shape including multiple stages. Then, the decomposition device (60) sets the fifth value (505), which is the value of input energy during a predetermined period (△T), by adding a thermal energy amount (△Eg) as a margin to the maximum value (504a) of the fourth value (504), which is the total value of required thermal energy during a predetermined period (△T).

[0121] In other words, the decontamination device (60) maintains the input energy amount value during a predetermined period (△T) at a constant value of the maximum value (+α) among the total thermal energy amounts. This "+α" corresponds to the energy amount (△Eg) as a margin for safety. This energy amount (△Eg) can be appropriately set according to the necessary sufficient margin.

[0122] In this way, in the wafer processing device (10) according to the present embodiment, the waste treatment control unit (120) transmits waste operation information to the waste treatment device (60) in advance, and the waste treatment device (60) appropriately sets the amount of thermal energy (input energy amount) to be applied to the load gas in the exhaust gas based on the received waste operation information. Accordingly, even if there is an unintended change in the operation of the waste treatment device (60) or the wafer processing unit (20), the waste treatment device (60) can appropriately perform waste treatment operation to suppress or reduce the harmfulness and environmental load by removing the load gas.

[0123] In addition, the abatement device (60) is set to a value that takes into account a safety margin in the amount of input energy required to abatement of load gas in the exhaust gas, as well as switching between on / off operating states, such as whether the operating load rate is maximum or zero, during wafer processing in the wafer processing unit (20). Because of this, the abatement device (60) being operated at an excessively high load rate is reduced, and the operating cost of the abatement device (60) is reduced.

[0124] Other examples of disaster treatment

[0125] FIG. 5 is a graph showing another example of a change in the value of the required heat energy amount. Similar to the graph in FIG. 4, the vertical axis represents the amount of heat energy, and the horizontal axis represents time. In the example shown in FIG. 4, the fifth value (505), which is the value of the input energy amount, was set to a constant value during a predetermined period (△T). In contrast, in the example shown in FIG. 5, the value of the input energy amount is varied in accordance with the fluctuation of the value of the required heat energy amount during a predetermined period (△T). In other words, in the example shown in FIG. 5, the period during which the fifth value (505), which is the value of the input energy amount, is constant is set to a shorter period than the predetermined period (△T). That is, during the predetermined period (△T), the value of the fifth value (505), which is the value of the input energy amount, is set by adding the amount of heat energy (△Eg) to the fourth value (504), which is the total value of the required heat energy amount that fluctuates with the passage of time.

[0126] To rephrase further, in this example, the fifth value (505), which is the input energy amount value, is increased or decreased more finely than in the example of FIG. 4 with respect to the fourth value (504), which is the total value of the required heat energy amount that fluctuates with time.

[0127] As a result, excessive thermal energy input to the exhaust gas can be suppressed, thereby further reducing the operating cost of the abatement device (60). Consequently, the operating cost of the wafer processing device (10) is reduced. Additionally, it is desirable that the interval for changing the input energy amount value be extremely short. In other words, it is desirable that the interval for the abatement device (60) to acquire abatement operation information be extremely short. In particular, it is desirable that the interval for changing the input energy amount value be the smallest value that can be set in the wafer processing unit (20) or the abatement device (60).

[0128] <Flow of Disaster Control Operation in Disaster Control Devices>

[0129] Next, using FIG. 6, the flow of the abatement operation in the abatement device (60) will be described. FIG. 6 is a graph showing the change over time of the total value of the required thermal energy amount and the value of the input energy amount.

[0130] When a dissolution operation is performed in the dissolution device (60), first, during the period when the wafer processing unit (20) is in operation, the dissolution processing control unit (120) obtains processing information (so-called processing recipe). More specifically, the dissolution processing control unit (120) obtains processing information (so-called processing recipe) for a predetermined period (△T) from a time during the operation period (hereinafter referred to as the target time) that is a specific time after each of the plurality of sampling times set by a predetermined sampling period (δt). As an example, as shown in FIG. 6, the dissolution processing control unit (120) obtains processing information for a predetermined period (△T) from a target time (t1) that is a specific time (△TL) after the time t0 at any time t0 set by the sampling period (δt).

[0131] In addition, a specific time (△TL) and a predetermined period (△T) are arbitrary periods that are set in advance, and are set as desirable periods based on, for example, the process of wafer processing or the number of processing steps performed in the wafer processor (44).

[0132] In FIG. 6, a first predetermined period (△Ta) and a second predetermined period (△Tb) are shown as examples of a predetermined period (△T). The first predetermined period (△Ta) is an example of a predetermined period (△T) that includes multiple stages (two or more stages) of the total value of the required thermal energy amount (fourth value (504)) that varies in a step shape, and corresponds to the predetermined period (△T) shown in FIG. 5 described above. Meanwhile, the second predetermined period (△Tb) is an example of a predetermined period (△T) that is equivalent to or shorter than one stage of the total value of the required thermal energy amount (fourth value (504)). In addition, the second predetermined period (△Tb) is, in other words, an example of a predetermined period (△T) that is equivalent to or shorter than the length of one processing process among a plurality of wafer processing processes.

[0133] Alternatively, the exhaust gas processing control unit (120) receives a signal output from the exhaust gas sensor (61) at each of a plurality of sampling times set with a predetermined sampling period (δt) and obtains exhaust gas information, which is data representing values ​​such as the type of gas, component, composition, or concentration of the exhaust gas including the load gas. When calculating exhaust gas operation information using only exhaust gas information, the target time (t1) is set to be the same as or earlier than the current sampling time, and exhaust gas information for a period of length △T past by a predetermined value (△T) from the earlier time or the current sampling time can be obtained.

[0134] Additionally, the decompression processing control unit (120) calculates the maximum value of the total required thermal energy amount over a predetermined period (△T) from the target time (t1) using the processing information. That is, the decompression processing control unit (120) calculates the maximum value of the fourth value (504) shown in FIG. 6. Next, the decompression processing control unit (120) calculates the input energy amount value by adding a value (△Eg) added as a margin for safety to the maximum value of the total required thermal energy amount value, and stores this input energy amount value in a memory device within the host computer (100) as the input energy amount value set for the decompression device (60) at, for example, the target time (t1).

[0135] In addition, the waste treatment control unit (120) stores, for example, processing information (recipe information) or exhaust gas information obtained during a predetermined period (△T) from a target time (t1) as time-series data in a memory device at a predetermined period. This processing information includes information such as the start time and end time of wafer processing performed by each wafer processor (44), or values ​​such as the type, component, composition, or concentration of load gas included in the exhaust gas. In addition, the maximum value of the total amount of required thermal energy calculated at each predetermined period (△T) from time t1 is also stored as time-series data.

[0136] In this embodiment, a predetermined period in which each time series data is correspondingly stored during a predetermined period (△T) from the target time (t1) is set as necessary. The predetermined period is, for example, a value equivalent to the aforementioned predetermined sampling period (δt). That is, at multiple times for each sampling period (δt) during the predetermined period (△T) from the target time (t1), the required thermal energy amount value is stored as time series data. In this example, at multiple times for each sampling period (δt) during the abatement operation, the total value of the required thermal energy amount at the target time (t1) after a specific time (△TL) from that time is calculated and stored.

[0137] In addition, the maximum value of the total amount of required thermal energy over a predetermined period (△T) from the target time (t1), and the value of the amount of input energy calculated according to the said maximum value are stored as time series data corresponding to the target time (t1).

[0138] In this way, in the present example, as shown in FIG. 6, at time t0, which is a specific time (△TL) earlier than the target time (t1), the input energy amount value at time t1 is calculated and stored in the host computer (100) by using processing information or exhaust gas information including a processing recipe for processing scheduled to be performed at the target time (t1) and physical information of the load gas.

[0139] In addition, the total value of the required thermal energy amount may be calculated at every sampling period (δt) during a predetermined period (△T) from any target time, but it is not necessarily calculated at every sampling period (δt). For example, the total value of the required thermal energy amount at the target time (t1) may be stored as time series data at a target time prior to the target time (t1).

[0140] However, for example, at any time t0, processing information including processing information for a predetermined period (△T) from the target time (t1) is obtained, and a new total value of required thermal energy is calculated and stored as time series data corresponding to a predetermined period (△T) from the target time (t1). Consequently, using the newly calculated time series data, the maximum value of the total value of required thermal energy at the target time (t1) and the setting value of the input energy value of the decompression device (60) are calculated and stored corresponding to the target time (t1).

[0141] In addition, when calculating the total value of the required thermal energy amount using exhaust gas information, the total value of the required thermal energy in the corresponding period may be calculated based on exhaust gas information from a period prior to the current sampling time by a value of a predetermined period (△T), and may be stored in correspondence with the target time (t1).

[0142] In this way, the input energy amount value to be set in the abatement device (60) is calculated by corresponding to each of the multiple target times that change with the passage of time at each sampling time (δt). The calculated input energy amount value is transmitted to the abatement device (60) by corresponding to the target time, as a value that must be set and realized at the said target time before the time during abatement operation becomes the target time.

[0143] In the present example, the input energy amount value (set value) is transmitted from the host computer (100) to the abatement device (60) at a predetermined time prior to the actual target time as abatement operation information. That is, abatement operation information including the input energy amount value is transmitted from the host computer (100) to the abatement device (60) in advance. Accordingly, the abatement processing control unit (120) calculates and stores time series data of the input energy amount value during abatement operation by the abatement device (60) before the actual time reaches the target time.

[0144] In addition, a signal indicating the input energy amount value set in the abatement device (60) at any target time, that is, a signal indicating abatement operation information, must be received by the abatement device (60) before the target time is reached. After the abatement device (60) receives the signal indicating abatement operation information, it requires a certain amount of time from the start of the change in the input energy amount value setting until it is finished. Furthermore, there is a time lag between the transmission of the signal indicating abatement operation information and the completion of the change in the setting by the abatement device (60), such as the time required from when the abatement processing control unit (120) transmits the signal indicating abatement operation information until it is actually received by the abatement device (60). In other words, the abatement device (60) requires a predetermined transition time from when it starts the change in the operating state until it completes the change in the operating state.

[0145] Considering this implementation time (time difference), it is preferable that a signal indicating decontamination operation information be transmitted from the decontamination processing control unit (120) to the decontamination device (60) in advance, that is, before the target time. It is preferable that the decontamination operation control unit (120) transmit decontamination operation information toward the decontamination device (60) so that the operating state of the decontamination device (60) is changed before the processing of the wafer performed under the processing conditions obtained in advance, for example.

[0146] For example, the time from when the abatement device (60) receives a signal indicating abatement operation information including an input energy amount value until it completes the setting change of the input energy amount value is set as period △L. When such a transition time (time difference) of period △L occurs, it is preferable for the abatement processing control unit (120) to transmit the abatement operation information to the abatement device (60) at the following timing.

[0147] As shown in FIG. 6, aquatic operation information including an input energy amount value set in the aquatic device (60) at a target time (t1) is transmitted from the aquatic treatment control unit (120) to the aquatic device (60) at a time that is at least a first period (△L) earlier than the target time (t1), preferably at a time that is a second period (△L+α) earlier than the first period (△L). In other words, the aquatic operation information is transmitted by the aquatic treatment control unit (120) to the aquatic device (60) until a time (t1-(△L+α)) that is at least a first period (△L) earlier than the target time (t1).

[0148] Additionally, it is preferable that the length of the second period (△L+α) be greater than the maximum value of the exhaust gas arrival time. It takes a certain amount of time for the exhaust gas to reach the exhaust device (60) from each wafer processor (44) or from a location detected by the exhaust gas sensor (61) on the exhaust mechanism or exhaust pipe (50). The arrival time of the exhaust gas varies depending on the speed of the exhaust gas flow or the length of the exhaust pipe (50). That is, the arrival time of the exhaust gas may differ for each wafer processor (44). In this case, the arrival time of the exhaust gas is represented by the longest time (maximum value) among the plurality of wafer processors (44).

[0149] However, during the period of aeration operation, the input energy amount value in the aeration device (60) is changed at any timing. The input energy amount value is changed in accordance with the required thermal energy amount value, which increases or decreases with time. At this time, it is necessary to suppress a shortage of the input energy amount value. That is, it is necessary to suppress the occurrence of a condition in which exhaust gas is not sufficiently aerated and load gas remains due to the change in the input energy amount value setting. In other words, the operating state of the aeration device (60) needs to be changed to enable exhaust gas aeration processing based on the aeration operation information.

[0150] Accordingly, during the abatement operation, the total value of the required thermal energy amount, or the value of the input energy amount that is set and changed in the abatement device (60), is determined at a plurality of timings of a predetermined cycle. And, for example, if the input energy amount value, etc., in the determination of any first timing is increased compared to the value determined in the second timing one time prior to the first timing, the change of the input energy amount value is terminated before the time when the exhaust gas, which has increased the amount of load gas that is the cause of the increase in the input energy amount value, etc., reaches the abatement device (60). In particular, it is preferable to terminate the increase in the amount of thermal energy actually input by changing the input energy amount value just before the exhaust gas reaches the abatement device (60).

[0151] Meanwhile, for example, if the input energy amount value in the first timing determination is reduced compared to the second timing determination one time prior to the first timing, the change in the input energy amount value is initiated after the time when the exhaust gas, in which the amount of load gas that is the cause of the reduction in the input energy amount has been reduced, reaches the abatement device (60). In particular, it is preferable to change the input energy amount value immediately after the exhaust gas reaches the abatement device (60) to terminate the reduction of the heating amount.

[0152] Based on the time series data described above, if the set value of the amount of energy input to the abatement device (60) at the target time (t1) increases compared to the amount of energy input at the sampling time one year prior to the target time (t1), the abatement processing control unit (120) preferably transmits abatement operation information including the amount of energy input at the target time (t1) to the abatement device (60) immediately before or prior to the time (t1-(△L+α)).

[0153] In other words, it is preferable for the waste treatment control unit (120) to transmit waste treatment operation information toward the waste treatment device (60) so that when it determines that the amount of load gas at the target time (t1) increases based on processing information including wafer processing conditions or exhaust gas information, the change in the operating state of the waste treatment device (60) is completed until the amount of load gas actually begins to increase. As an example, when the waste treatment control unit (120) determines that the amount of load gas at the target time (t1) increases based on processing information including wafer processing conditions, it transmits waste treatment operation information toward the waste treatment device (60) so that the change in the operating state of the waste treatment device (60) is completed by the target time (t1).

[0154] In particular, when the waste treatment control unit (120) determines that the amount of load gas increases based on treatment information or exhaust gas information, it is preferable to transmit waste treatment operation information toward the waste treatment device (60) immediately after acquiring said information.

[0155] Meanwhile, if the value of the input energy amount of the abatement device (60) at the target time (t1) decreases compared to the value of the input energy amount at the sampling time one year prior to the target time (t1), it is preferable for the abatement processing control unit (120) to transmit abatement operation information toward the abatement device (60) after a second time that is earlier by a transition time (△T) than the first time when the load gas in the exhaust gas begins to decrease. As an example, if the abatement processing control unit (120) determines that the amount of load gas decreases based on processing information or exhaust gas information, it is preferable for the abatement operation information toward the abatement device (60) to transmit abatement operation information after a second time that is earlier by a period △L corresponding to the transition time than the target time (t1) corresponding to the first time.

[0156] In other words, it is preferable for the abatement processing control unit (120) to transmit abatement operation information toward the abatement device (60) so that when it determines that the amount of load gas at the target time (t1) decreases based on processing information including wafer processing conditions or exhaust gas information, the change in the operating state of the abatement device (60) begins after the amount of load gas actually starts to decrease. As an example, it is preferable for the abatement processing control unit (120) to transmit abatement operation information toward the abatement device (60) so that when it determines that the amount of load gas at the target time (t1) decreases based on processing information including wafer processing conditions, the change in the operating state of the abatement device (60) begins after the target time (t1). Additionally, if it is determined based on exhaust gas information that the amount of load gas decreases after the target time (t1) or the current sampling time, it is preferable to transmit exhaust gas operation information toward the exhaust gas device (60) so that a change in the operating state of the exhaust gas device (60) is initiated after the time required for exhaust gas to flow from the exhaust gas sensor (61) to the exhaust gas device (60) has elapsed from the target time (t1) or the current sampling time.

[0157] Additionally, the waste treatment control unit (120) periodically acquires treatment information as described above. Then, the waste treatment control unit (120) determines whether the amount of load gas at a target time or the current sampling time increases or decreases by comparing the treatment information acquired at any timing with the treatment information acquired at a timing one step prior to any timing, or by comparing the exhaust gas information acquired at any timing with the exhaust gas information acquired at a timing one step prior to any timing. Of course, the method of determining whether the amount of load gas increases or decreases by the waste treatment control unit (120) is not particularly limited.

[0158] In this example, when the input energy value of the abatement device (60) increases at any target time, operation with the increased input energy value is initiated in the abatement device (60) before the exhaust gas with increased load gas reaches the abatement device (60). On the other hand, when the input energy value of the abatement device (60) decreases at any target time, operation with the reduced input energy value is initiated in the abatement device (60) after the exhaust gas with reduced load gas reaches the abatement device (60).

[0159] By this, the amount of thermal energy (input energy) applied by the abatement device (60) to the load gas in the exhaust gas is reduced to a level below the amount of thermal energy required to abatement the load gas, thereby preventing the exhaust gas from being sufficiently abatement and the load gas from remaining. As a result, the safety of the operation of the abatement device (60) and the wafer processing device (10) can be prevented from being compromised.

[0160] In addition, according to the wafer processing device (10) of the present disclosure, when the load gas in the exhaust gas increases or decreases over time, the load gas can be treated by the load gas removal device (60) while ensuring a safety factor by responding to the increase or decrease in the load gas. Accordingly, the load and harmfulness to the environment during the operation of the wafer processing device (10) are reduced. In addition, the operating cost of the wafer processing device (10) is also reduced.

[0161] Although embodiments and representative variations have been described above, the above-described technology is applicable to various variations other than those exemplified. For example, the above-described variations may be combined with each other.

[0162] [Industrial Applicability]

[0163] The present invention can be widely used in wafer processing devices. Explanation of the symbols

[0164] 10… Wafer processing device, 20… Wafer processing unit, 30… Atmosphere side block, 31… Atmosphere transfer vessel, 32… FOUP stand, 40… Vacuum side block, 41(41A~41C)… Vacuum transfer vessel, 42(42A, 42B)… Intermediate room, 43… Lock room, 44(44A~44F)… Wafer processor, 45(45A~45C)… Vacuum transfer robot, 50… Exhaust pipe, 60… Disposal device, 100… Host computer (control unit), 101… Communication path, 110… Wafer processing control unit, 120… Disposal processing control unit, 440… Plasma etching device, 441… Processing room, 442… Vacuum vessel, 443… Dielectric window, 444… Shower plate, 444a… Gas inlet hole, 445… Exhaust port, 446… Vacuum pump, 447… Exhaust volume control valve, 448… Electric / magnetic field forming unit, 449… Waveguide, 450… Power supply for electric field generation, 451… Magnetic field generating coil, 460… Electrode for wafer placement, 461a… Protrusion, 461b… Recess, 462… Dielectric film, 463… Susceptor ring, 464… Conductive film, 465… High-frequency filter, 466… DC power supply, 467… Matching unit, 468… High-frequency power supply (RF power supply), 470… Piping, 471… Integrated gas box, 472… Mass flow controller (MFC), 474… Gas supply pipe, 475… Shut-off valve, 480… Controller

Claims

Claim 1 A wafer processing unit that supplies processing gas to a container and processes a wafer to be processed placed within the container, and is connected to a decontamination device that performs decontamination treatment to reduce load gas in exhaust gas discharged from the container, and a control device that controls the wafer processing unit and the decontamination device, wherein the decontamination device has a function of increasing or decreasing the amount of load gas reduced by the decontamination treatment according to a received command signal or a signal indicating a different amount of load gas, and wherein the control device transmits decontamination operation information toward the decontamination device in advance to change the operating state of the decontamination device to enable decontamination treatment of the exhaust gas based on the processing conditions of the wafer in the wafer processing unit acquired in advance, and acquires the processing conditions of the wafer processing unit for a predetermined period from an arbitrarily set target time before the target time, and if it is determined based on the processing conditions that the amount of load gas at the target time increases, the operation of the decontamination device before the amount of load gas begins to increase A wafer processing device that transmits the abatement operation information toward the abatement device to complete a change in state, and transmits the abatement operation information toward the abatement device such that, when it is determined based on the processing conditions that the amount of the load gas at the target time decreases, a change in the operating state of the abatement device begins after the amount of the load gas starts to decrease. Claim 2 A wafer processing device according to claim 1, wherein the above-mentioned abatement operation information includes information regarding the amount of the load gas that increases or decreases, or an operation command to change the operating state of the abatement device to enable abatement processing of the increased or decreased amount of the load gas, and the control device transmits the abatement operation information toward the abatement device so that the operating state of the abatement device is changed before processing of the wafer performed under the processing conditions obtained in advance. Claim 3 A wafer processing device according to claim 1 or 2, wherein the control device transmits the abatement operation information toward the abatement device to change the operating state of the abatement device at the target time to enable the abatement of the exhaust gas, based on the acquired processing conditions. Claim 4 A wafer processing device according to claim 1 or 2, wherein the control device transmits the abatement operation information toward the abatement device, including the amount of energy required for the abatement treatment, based on the processing conditions of the wafer processing unit. Claim 5 A wafer processing apparatus according to claim 1 or 2, wherein the control device requires a predetermined execution time from the time of initiating a change in the operating state until the change in the operating state is completed. Claim 6 delete Claim 7 A wafer processing device according to claim 1, wherein the control device requires a predetermined transition time from the time it starts changing the operating state until it completes changing the operating state, and the control device transmits the control operation information toward the control device immediately after acquiring the processing condition when it determines that the amount of the load gas increases based on the processing condition, and transmits the control operation information toward the control device after a second time that is faster than the transition time than the first time when the amount of the load gas in the exhaust gas begins to decrease based on the processing condition. Claim 8 A wafer processing apparatus according to claim 1 or 2, wherein the control device periodically acquires the processing condition and compares the processing condition acquired at any timing with the processing condition acquired at a timing one prior to the any timing to determine whether the amount of the load gas increases or the amount of the load gas decreases.

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