apparatus for manufacturing Semiconductor device

Abstract

An embodiment comprises a skeletal portion; and an open pore disposed within the skeletal portion, wherein the skeletal portion comprises a core portion having an extended shape; and a coating portion disposed around the core portion.

Description

Technology Field

[0001] The embodiment relates to a semiconductor device manufacturing apparatus. Background Technology

[0002] Generally, depending on the characteristics of the process, semiconductor equipment includes single-wafer processing equipment in which wafers are processed one by one, and batch processing equipment in which multiple wafers are processed simultaneously in units of 20, 50, etc.

[0003] In the case of the above batch processing equipment, a boat is provided to insert multiple wafers loaded into the process chamber so that the process can be carried out.

[0004] Therefore, the boats introduced into the semiconductor device manufacturing facility where the process is carried out form part of the process environment and are affected by high temperature or high vacuum process environments.

[0005] For example, in a chemical vapor deposition process, a wafer loaded in a boat is introduced into a process chamber where a reaction gas is supplied, and a tungsten silicide (WSi2) film is formed on the wafer under high temperature and high vacuum conditions.

[0006] Therefore, typically, the material of the above boat can be quartz, which has high heat resistance and generates few particles.

[0007] In relation to such a semiconductor device manufacturing apparatus, related technology is disclosed in Korean Registered Patent No. 10-0274934, etc. The problem to be solved

[0008] The embodiments aim to provide a semiconductor device manufacturing apparatus and a method for manufacturing the same that can prevent defects in semiconductor devices and process a semiconductor substrate uniformly throughout. means of solving the problem

[0009] A semiconductor device manufacturing apparatus according to one embodiment includes a skeleton portion; and an open pore disposed within the skeleton portion, wherein the skeleton portion includes a core portion having an extended shape; and a coating portion disposed around the core portion.

[0010] In a semiconductor device manufacturing apparatus according to one embodiment, the core portion may include carbon, and the coating portion may include silicon carbide.

[0011] In a semiconductor device manufacturing apparatus according to one embodiment, the core portion may include a transition metal in an amount of 0.1 ppm to 50 ppm.

[0012] In a semiconductor device manufacturing apparatus according to one embodiment, the skeletal portion may include a fiber having a diameter of 100 μm to 2000 μm.

[0013] A semiconductor device manufacturing apparatus according to an embodiment comprises: a first frame; a second frame facing the first frame; a column portion extending from the first frame to the second frame and coupled to the first frame and the second frame; and a support portion extending from the column portion, wherein at least one of the first frame, the second frame, the column portion, or the support portion comprises an open pore, and at least one of the first frame, the second frame, the column portion, or the support portion has a porosity exceeding 10 vol%.

[0014] In a semiconductor device manufacturing apparatus according to one embodiment, the pillar portion has a first porosity, the support portion has a second porosity, and the second porosity may be 1 vol% to 30 vol% larger than the first porosity.

[0015] A semiconductor device manufacturing apparatus according to an embodiment comprises: a first frame; a second frame facing the first frame; a pillar portion extending from the first frame to the second frame and coupled to the first frame and the second frame; and a support portion extending from the pillar portion, wherein the support portion includes a first flow path through which a process gas can pass.

[0016] In a semiconductor device manufacturing apparatus according to one embodiment, the pillar portion may include a second flow path through which the gas can pass.

[0017] In a semiconductor device manufacturing apparatus according to one embodiment, the first flow path may be extended in a direction corresponding to the direction in which the pillar portion is extended.

[0018] In a semiconductor device manufacturing apparatus according to one embodiment, the first flow path may be inclined with respect to the direction in which the support member is extended.

[0019] In a semiconductor device manufacturing apparatus according to one embodiment, the first flow path penetrates the support member, and the second flow path can penetrate the pillar member.

[0020] In a semiconductor device manufacturing apparatus according to one embodiment, the first frame may include a third flow path through which the gas can pass.

[0021] In a semiconductor device manufacturing apparatus according to one embodiment, the second frame may include a fourth flow path through which the gas can pass. Effects of the invention

[0022] A semiconductor device manufacturing apparatus according to an embodiment includes open pores and a skeletal portion. The skeletal portion has a wire shape, and the open pores may be disposed between the skeletal portions.

[0023] Accordingly, the process gas can flow smoothly through the open pores. That is, the process gas can flow smoothly through the open pores.

[0024] In particular, the above-mentioned open pores and the above-mentioned skeletal portion may be included in a support portion for supporting a semiconductor substrate such as a wafer. Accordingly, a process gas can be easily supplied to the semiconductor substrate through the above-mentioned open pores.

[0025] In addition, since the semiconductor device manufacturing apparatus according to the embodiment includes the open pores, the process gas can flow smoothly throughout, and the temperature inside the chamber can be uniform.

[0026] In particular, the support member can support the edge portion of the semiconductor substrate. At this time, since the support member includes the open pore, the temperature of the edge portion of the semiconductor substrate can be made uniform. Accordingly, the semiconductor device manufacturing apparatus according to the embodiment can effectively process the edge portion of the semiconductor substrate.

[0027] Accordingly, the semiconductor device manufacturing apparatus according to the embodiment can uniformly process the entire surface of the semiconductor substrate.

[0028] In addition, the above-mentioned open pores can relieve stress caused by heat. Accordingly, since the semiconductor device manufacturing apparatus according to the embodiment includes the above-mentioned open pores, thermal deformation can be minimized even at high temperatures. Brief explanation of the drawing

[0029] FIG. 1 is a perspective view illustrating a wafer boat according to an embodiment. FIG. 2 is a perspective view showing a part of the column and support sections. Figure 3 is a drawing showing an enlarged view of the interior of the support member. Figure 4 is a drawing showing a cross-section of a skeletal section cut along the longitudinal direction. Figure 5 is a drawing showing a cross-section of the skeletal part cut along the width direction. FIGS. 6 to 12 are drawings illustrating the process of manufacturing a wafer boat according to an embodiment. FIG. 13 is a cross-sectional view illustrating one cross section of a wafer boat according to another embodiment. FIG. 14 is a cross-sectional view illustrating one cross section of a wafer boat according to another embodiment. FIG. 15 is a cross-sectional view illustrating one cross section of a wafer boat according to another embodiment. FIG. 16 is a cross-sectional view illustrating one cross section of a wafer boat according to another embodiment. FIG. 17 is a cross-sectional view illustrating one cross section of a wafer boat according to another embodiment. Specific details for implementing the invention

[0030] In the description of the embodiments, where each part, surface, layer, or substrate, etc. is described as being formed "on" or "under" each part, surface, layer, or substrate, etc., "on" and "under" include both being formed "directly" and "indirectly" through other components. Furthermore, the reference for the "on" or "under" of each component is explained based on the drawings. The size of each component in the drawings may be exaggerated for illustrative purposes and does not represent the actual size applied.

[0031] FIG. 1 is a perspective view illustrating a wafer boat according to an embodiment. FIG. 2 is a perspective view illustrating a part of a column section and a support section. FIG. 3 is an enlarged view illustrating the interior of a support section. FIG. 4 is a cross-sectional view illustrating a section of a frame section cut along the longitudinal direction. FIG. 5 is a cross-sectional view illustrating a section of a frame section cut along the width direction. FIG. 6 to 12 are drawings illustrating the process of manufacturing a wafer boat according to an embodiment. FIG. 13 is a cross-sectional view illustrating a section of a wafer boat according to another embodiment. FIG. 14 is a cross-sectional view illustrating a section of a wafer boat according to yet another embodiment. FIG. 15 is a cross-sectional view illustrating a section of a wafer boat according to yet another embodiment. FIG. 16 is a cross-sectional view illustrating a section of a wafer boat according to yet another embodiment. FIG. 17 is a cross-sectional view illustrating a section of a wafer boat according to yet another embodiment.

[0032] A wafer boat according to an embodiment may be a device for supporting semiconductor substrates including silicon wafers. A wafer boat according to an embodiment may load a plurality of semiconductor substrates and be placed in a process chamber together with said semiconductor substrates. Subsequently, various semiconductor processes such as a chemical vapor deposition process, a physical vapor deposition process, a heat treatment process, and / or a cleaning process may be performed in said process chamber.

[0033] Accordingly, the wafer boat according to the embodiment may be a device applied to a process for manufacturing semiconductor devices that accommodates, transports, or applies the semiconductor substrates to a semiconductor process. That is, the wafer boat according to the embodiment may be a semiconductor device manufacturing device used in a process for manufacturing semiconductor devices.

[0034] A wafer boat according to an embodiment can support and accommodate the semiconductor substrates. A wafer boat according to an embodiment can support the outer portions of the semiconductor substrates and stack the semiconductor substrates spaced apart from each other. That is, the semiconductor substrates can be stacked at a constant distance from each other by the wafer boat according to an embodiment.

[0035] Referring to FIGS. 1 to 4, in the embodiment, the wafer boat includes a first frame (100), a second frame (200), a first pillar section (310), a second pillar section (320), a third pillar section (330), and a plurality of support sections.

[0036] The first frame (100) is positioned at the bottom. The first frame (100) may be a lower frame. The first frame (100) may support the second frame (200), the first column part (310), the second column part (320), the third column part (330), and the support parts.

[0037] The first frame (100) may have a plate shape. The first frame (100) may be a plate having a circular shape. The first frame (100) may be a plate having a ring shape. The diameter of the first frame (100) may be about 1.1 times to about 2 times the diameter of the semiconductor substrates.

[0038] The second frame (200) is positioned on the upper side. The second frame (200) may be an upper frame. The second frame (200) may be positioned opposite the first frame (100). The second frame (200) may be positioned on the first frame (100) and may be spaced apart from the first frame (100) by a predetermined distance. The second frame (200) may be spaced apart by a distance equal to the length of the first column portion (310). Additionally, the second frame (200) may be substantially parallel to the first frame (100). The second frame (200) and the first frame (100) may overlap each other when viewed from above.

[0039] The second frame (200) may have a plate shape. The second frame (200) may be a plate having a circular or ring shape. The diameter of the first frame (100) may be about 1.1 times to about 2 times the diameter of the semiconductor substrates (W).

[0040] In addition, the first frame (100) and the second frame (200) may have corresponding shapes. In addition, the first frame (100) and the second frame (200) may have corresponding sizes.

[0041] The first column portion (310) may extend from the first frame (100) to the second frame (200). The first column portion (310) may be connected to the first frame (100) and the second frame (200). One end of the first column portion (310) may be connected to the first frame (100), and the other end of the first column portion (310) may be connected to the second frame (200). One end of the first column portion (310) may be connected to the first frame (100), and the other end of the first column portion (310) may be connected to the second frame (200). The first column portion (310) may be fastened to the first frame (100) and the second frame (200).

[0042] The second column portion (320) may extend from the first frame (100) to the second frame (200). The second column portion (320) may be connected to the first frame (100) and the second frame (200). One end of the second column portion (320) may be connected to the first frame (100), and the other end of the second column portion (320) may be connected to the second frame (200). One end of the second column portion (320) may be connected to the first frame (100), and the other end of the second column portion (320) may be connected to the second frame (200). The second column portion (320) may be fastened to the first frame (100) and the second frame (200).

[0043] The third column portion (330) may extend from the first frame (100) to the second frame (200). The third column portion (330) may be connected to the first frame (100) and the second frame (200). One end of the third column portion (330) may be connected to the first frame (100), and the other end of the third column portion (330) may be connected to the second frame (200). One end of the third column portion (330) may be connected to the first frame (100), and the other end of the third column portion (330) may be connected to the second frame (200). The third column portion (330) may be fastened to the first frame (100) and the second frame (200).

[0044] The first column section (310), the second column section (320), and the third column section (330) may be extended side by side. The first column section (310), the second column section (320), and the third column section (330) may be substantially parallel to each other.

[0045] The support members may extend from the first column member (310), the second column member (320), and the third column member (330). The support members may extend laterally from the first column member (310), the second column member (320), and the third column member (330). The support members may extend inwardly from the first column member (310), the second column member (320), and the third column member (330).

[0046] The above support members include a plurality of first support members (410), a plurality of second support members, and a plurality of third support members.

[0047] The first support members (410) may be formed integrally with the first column member (310). The first support members (410) may be spaced apart from each other at a constant interval. First slots (510) may be formed by the area between the first support members (410) and the first column member (310).

[0048] The height of the first slots (510) may be about 1.1 to about 3 times the thickness of the semiconductor substrate (W).

[0049] Additionally, the second support members may be formed integrally with the second column member (320). The second support members may be spaced apart from each other at a constant interval. Second slots may be formed by the area between the second support members and the second column member (320).

[0050] The height of the second slots may be about 1.1 to about 3 times the thickness of the semiconductor substrate (W).

[0051] Additionally, the third support members may be formed integrally with the third column member (330). The third support members may be spaced apart from each other at a constant interval. Third slots may be formed by the area between the third support members and the third column member (330).

[0052] The height of the third slots may be about 1.1 to about 3 times the thickness of the semiconductor substrate (W).

[0053] The first slots (510), the second slots, and the third slots may be formed at positions corresponding to each other. That is, each of the first slots (510), the second slots, and the third slots may be located on the same plane, and each plane may be parallel to the first frame (100) and the second frame (200).

[0054] The first slots (510), the second slots, and the third slots may be opened toward a space for accommodating the semiconductor substrates (W). The space for accommodating the semiconductor substrates (W) may be surrounded by the first frame (100), the second frame (200), the first pillar (310), the second pillar (320), and the third pillar (330).

[0055] As illustrated in FIGS. 3 to 5, a wafer boat according to an embodiment includes a skeletal section (10) and an open pore (20). The support section (410, etc.) and the column section (310, 320, 330) may include the skeletal section (10) and the open pore (20). The support section may include the skeletal section (10) and the open pore (20). The first frame (100) and the second frame (200) may include the skeletal section (10) and the open pore (20).

[0056] The above skeletal part (10) can support the above support part and the above column part (310, 320, 330). The above skeletal part (10) can form the overall shape of the above support part and the above column part (310, 320, 330). The above skeletal part (10) can perform a mechanical function of receiving and supporting the semiconductor substrate in the above support part and the above column part (310, 320, 330). In addition, the above skeletal part (10) can perform a mechanical function of supporting and fixing the first frame (100) and the second frame (200) in the above column part (310, 320, 330).

[0057] The above-mentioned skeletal part (10) may have a fiber shape. The above-mentioned skeletal part (10) may have a fabric shape. The above-mentioned skeletal part (10) may have a non-woven fabric shape. The above-mentioned skeletal part (10) may have a wire shape. The above-mentioned skeletal part (10) may include a plurality of wires that are joined by crossing each other.

[0058] The wires may extend in different directions. The wires may extend in random directions relative to each other. The wires may extend while bending.

[0059] As illustrated in FIGS. 4 and 5, the skeletal part (10) may include a core part (11) and a coating part (12).

[0060] The core portion (11) may have an extended shape. The core portion (11) may have a fiber shape. The core portion (11) may have a fabric shape. The core portion (11) may have a non-woven fabric shape. The core portion (11) may have a wire shape. The core portion (11) may be formed by wires crossing and joining together.

[0061] The core portion (11) may contain carbon. The core portion (11) may contain glass-like carbon. The core portion (11) may contain the glass-like carbon in an amount exceeding about 90% based on the total weight of the core portion (11). The core portion (11) may contain the glass-like carbon in an amount exceeding about 95% based on the total weight of the core portion (11). The core portion (11) may contain the glass-like carbon in an amount exceeding about 97% based on the total weight of the core portion (11).

[0062] The above glassy carbon may simultaneously possess glassy and ceramic properties. The above glassy carbon may have a state in which further graphitization is impossible. The above glassy carbon may have high thermal stability and high thermal conductivity. In addition, the above glassy carbon may have a Mohs hardness of 6 or higher.

[0063] The glassy carbon may include sp2-bonded carbon. The glassy carbon may include sp2-bonded carbon in an amount greater than about 90 atoms. The glassy carbon may include sp2-bonded carbon in an amount greater than about 95 atoms. The glassy carbon may include sp2-bonded carbon in an amount greater than about 99 atoms.

[0064] The core portion (11) may include a metal. The core portion (11) may include the metal in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may include the metal in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may include the metal in an amount of about 1 ppm to about 50 ppm based on the total weight of the core portion (11).

[0065] The core portion (11) may contain iron in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may contain iron in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may contain iron in an amount of about 1 ppm to about 50 ppm based on the total weight of the core portion (11).

[0066] The core portion (11) may contain aluminum in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may contain aluminum in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the core portion (11). The core portion (11) may contain aluminum in an amount of about 1 ppm to about 50 ppm based on the total weight of the core portion (11).

[0067] The core portion (11) may contain nickel or copper in an amount of less than about 10 ppm based on the total weight of the core portion (11). The core portion (11) may contain nickel or copper in an amount of less than about 1 ppm based on the total weight of the core portion (11). The core portion (11) may contain nickel or copper in an amount of less than about 0.5 ppm based on the total weight of the core portion (11).

[0068] Since the core part (11) contains the metal with the above content, the skeleton part (10) can have appropriate electrical and mechanical properties.

[0069] The coating portion (12) is positioned around the core portion (11). The coating portion (12) may be positioned on the outer surface of the core portion (11). The coating portion (12) may be positioned directly on the outer surface of the core portion (11). The coating portion (12) may surround the core portion (11). The coating portion (12) may coat the outer surface of the core portion (11). The coating portion (12) may cover the outer surface of the core portion (11). The coating portion (12) may cover the entire core portion (11).

[0070] The coating portion (12) may include silicon carbide. The coating portion (12) may include β-SiC. Additionally, the coating portion (12) may include α-SiC and β-SiC. Additionally, the coating portion (12) may include amorphous silicon carbide.

[0071] The coating portion (12) may contain silicon carbide in an amount exceeding approximately 85 wt% based on the total weight of the coating portion (12). The coating portion (12) may contain silicon carbide in an amount exceeding approximately 90 wt% based on the total weight of the coating portion (12). The coating portion (12) may contain silicon carbide in an amount exceeding approximately 95 wt% based on the total weight of the coating portion (12).

[0072] The coating portion (12) can be formed by a chemical vapor deposition process. That is, the coating portion (12) may include CVD-SiC.

[0073] The coating portion (12) may include a metal. The coating portion (12) may include the metal in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may include the metal in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may include the metal in an amount of about 1 ppm to about 50 ppm based on the total weight of the coating portion (12).

[0074] The coating portion (12) may contain iron in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain iron in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain iron in an amount of about 1 ppm to about 50 ppm based on the total weight of the coating portion (12).

[0075] The coating portion (12) may contain aluminum in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain aluminum in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain aluminum in an amount of about 1 ppm to about 50 ppm based on the total weight of the coating portion (12).

[0076] The coating portion (12) may contain nickel or copper in an amount of less than about 10 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain nickel or copper in an amount of less than about 1 ppm based on the total weight of the coating portion (12). The coating portion (12) may contain nickel or copper in an amount of less than about 0.5 ppm based on the total weight of the coating portion (12).

[0077] The diameter of the core part (11) may be about 1 µm to about 1000 µm. The diameter of the core part (11) may be about 1 µm to about 500 µm. The diameter of the core part (11) may be about 10 µm to about 1000 µm. The diameter of the core part (11) may be about 100 µm to about 1000 µm. The diameter of the core part (11) may be about 50 µm to about 500 µm. The diameter of the core part (11) may be about 10 µm to about 300 µm. The diameter of the core part (11) may be about 100 µm to about 500 µm.

[0078] The diameter of the core portion (11) can be measured based on a cross-section cut in a direction perpendicular to the direction in which the core portion (11) extends. The diameter of the core portion (11) can be derived based on the area of ​​the cross-section. The diameter of a circle having an area corresponding to the area of ​​the cross-section may be the diameter of the core portion (11).

[0079] Since the core portion (11) has a diameter as described above, the skeletal portion (10) can have appropriate electrical and mechanical properties. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively protect the semiconductor substrate during the process of receiving and transporting the semiconductor substrate.

[0080] The thickness of the coating portion (12) may be about 1 µm to about 2000 µm. The thickness of the coating portion (12) may be about 1 µm to about 1000 µm. The thickness of the coating portion (12) may be about 1 µm to about 500 µm. The thickness of the coating portion (12) may be about 1 µm to about 200 µm. The thickness of the coating portion (12) may be about 1 µm to about 100 µm. The thickness of the coating portion (12) may be about 100 µm to about 2000 µm. The thickness of the coating portion (12) may be about 100 µm to about 1000 µm. The thickness of the coating portion (12) may be about 100 µm to about 500 µm. The thickness of the coating portion (12) may be about 50 µm to about 500 µm. The thickness of the coating portion (12) may be about 50㎛ to about 200㎛.

[0081] Since the coating portion (12) has the thickness as described above, the skeletal portion (10) can have appropriate electrical and mechanical properties. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively protect the semiconductor substrate during the process of receiving and transporting the semiconductor substrate.

[0082] The diameter of the skeletal part (10) may be approximately 3 µm to approximately 3000 µm. The diameter of the skeletal part (10) may be approximately 3 µm to approximately 1500 µm. The diameter of the skeletal part (10) may be approximately 30 µm to approximately 3000 µm. The diameter of the skeletal part (10) may be approximately 300 µm to approximately 3000 µm. The diameter of the skeletal part (10) may be approximately 150 µm to approximately 1500 µm. The diameter of the skeletal part (10) may be approximately 30 µm to approximately 900 µm. The diameter of the skeletal part (10) may be approximately 300 µm to approximately 1500 µm. The diameter of the skeletal part (10) may be approximately 100 µm to approximately 1000 µm. The diameter of the skeletal part (10) may be approximately 100 µm to approximately 2000 µm.

[0083] The diameter of the above-mentioned skeletal part (10) may be the diameter of the wire constituting the above-mentioned skeletal part (10). The diameter of the above-mentioned skeletal part (10) may be the diameter of the skeletal part (10) disposed between the above-mentioned open holes (20).

[0084] The diameter of the skeletal part (10) can be measured based on a cross-section cut in a direction perpendicular to the direction in which the skeletal part (10) extends. The diameter of the skeletal part (10) can be derived based on the area of ​​the cross-section. The diameter of a circle having an area corresponding to the area of ​​the cross-section may be the diameter of the skeletal part (10).

[0085] Since the above-mentioned skeletal portion (10) has a thickness as described above, the above-mentioned skeletal portion (10) can have appropriate electrical and mechanical properties. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively protect the semiconductor substrate during the process of receiving and transporting the semiconductor substrate.

[0086] The skeletal part (10) may include metal. The skeletal part (10) may include the metal in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may include the metal in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may include the metal in an amount of about 1 ppm to about 50 ppm based on the total weight of the skeletal part (10).

[0087] The skeletal part (10) may contain iron in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain iron in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain iron in an amount of about 1 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain iron in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0088] The skeletal part (10) may contain aluminum in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain aluminum in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain aluminum in an amount of about 1 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain aluminum in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0089] The skeletal part (10) may contain nickel or copper in an amount of less than about 10 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain nickel or copper in an amount of less than about 1 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain nickel or copper in an amount of less than about 0.5 ppm based on the total weight of the skeletal part (10).

[0090] The skeletal part (10) may contain magnesium in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain magnesium in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain magnesium in an amount of about 0.5 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain magnesium in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0091] The skeletal part (10) may contain calcium in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain calcium in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain calcium in an amount of about 0.5 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain calcium in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0092] The skeletal part (10) may contain titanium in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain titanium in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain titanium in an amount of about 0.5 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain titanium in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0093] The skeletal part (10) may contain zinc in an amount of about 0.01 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain zinc in an amount of about 0.1 ppm to about 100 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain zinc in an amount of about 0.5 ppm to about 50 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain zinc in an amount of about 0.5 ppm to about 10 ppm based on the total weight of the skeletal part (10).

[0094] Since the above-mentioned skeletal portion (10) contains the metal in the above-mentioned amount, it can have appropriate electrical properties and appropriate mechanical properties. Accordingly, the above-mentioned skeletal portion (10) can efficiently process the semiconductor substrate and prevent defects in the semiconductor manufacturing process.

[0095] The skeletal part (10) may contain sulfur or chlorine in an amount of less than about 20 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain sulfur or chlorine in an amount of less than about 10 ppm based on the total weight of the skeletal part (10). The skeletal part (10) may contain sulfur or chlorine in an amount of less than about 5 ppm based on the total weight of the skeletal part (10).

[0096] Since the above-mentioned skeletal portion (10) contains sulfur or chlorine in the same amount as above, the wafer boat according to the embodiment can prevent defects caused by the sulfur or chlorine in the semiconductor device manufacturing process.

[0097] The open pore (20) is disposed within the skeletal part (10). The open pore (20) may be disposed adjacent to the skeletal part (10). The open pore (20) may be disposed adjacent to a wire included in the skeletal part (10). The open pore (20) may surround the wire included in the skeletal part (10).

[0098] The open pores (20) can be connected to each other. The open pores (20) can be exposed to the outside from the support member. Accordingly, a flow path can be formed from one side of the support member to the other side of the support member by the open pores (20). That is, the open pores (20) can be connected to each other to form a flow path from one side of the support member to the other side of the support member.

[0099] The above open pore (20) can form the flow path between different faces in the support portion to allow process gas used in the semiconductor device manufacturing process to flow.

[0100] The diameter of the open pores (20) may be approximately 50 μm to approximately 2000 μm. The open pores (20) may not be separated from each other and may be connected continuously.

[0101] When the support member is composed of the skeletal member (10) and the open pore (20), the porosity of the support member may be about 1 ppi to about 100 ppi. The porosity may mean the number of pores per inch.

[0102] Additionally, when the support member is composed of the skeletal part (10) and the open pore (20), the porosity of the support member may be about 20 vol% to about 70 vol%. When the support member is composed of the skeletal part (10) and the open pore (20), the porosity of the support member may be about 20 vol% to about 60 vol%. When the support member is composed of the skeletal part (10) and the open pore (20), the porosity of the support member may be about 20 vol% to about 55 vol%. When the support member is composed of the skeletal part (10) and the open pore (20), the porosity of the support member may be about 30 vol% to about 70 vol%. When the support member is composed of the skeletal part (10) and the open pore (20), the porosity of the support member may be about 40 vol% to about 70 vol%. The porosity of the porcelain support may exceed about 10 vol%.

[0103] Since the above support has the porosity and / or porosity as described above, the support can effectively flow process gas while having appropriate mechanical strength.

[0104] Additionally, when the column portions (310, 320, 330) are composed of the skeletal portion (10) and the open pores (20), the porosity of the support portion may be about 1 ppi to about 100 ppi. The porosity may refer to the number of pores per inch.

[0105] Additionally, when the column portion (310, 320, 330) is composed of the skeletal portion (10) and the open pore (20), the porosity of the column portion (310, 320, 330) may be about 10 vol% to about 60 vol%. When the column portion is composed of the skeletal portion (10) and the open pore (20), the porosity of the column portion may be about 10 vol% to about 50 vol%. When the column portion is composed of the skeletal portion (10) and the open pore (20), the porosity of the column portion may be about 10 vol% to about 50 vol%. When the column portion is composed of the skeletal portion (10) and the open pore (20), the porosity of the column portion may be about 20 vol% to about 60 vol%. When the above column portion is composed of the above skeletal portion (10) and the above open pore (20), the porosity of the above column portion may be about 30 vol% to about 60 vol%. When the above column portion (310, 320, 330) is composed of the above skeletal portion (10) and the above open pore (20), the porosity of the above column portion (310, 320, 330) may exceed about 10 vol%.

[0106] Since the above-mentioned column portion has the porosity and / or porosity as described above, the column portion can effectively flow process gas while having appropriate mechanical strength.

[0107] The porosity of the support portion may be greater than the porosity of the column portion. The porosity of the support portion may be greater than the porosity of the column portion by about 5 vol% to about 30 vol%. The porosity of the support portion may be greater than the porosity of the column portion by about 10 vol% to about 30 vol%. The porosity of the support portion may be greater than the porosity of the column portion by about 1 vol% to about 30 vol%.

[0108] Additionally, when the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the support part may be about 1 ppi to about 100 ppi. The porosity may mean the number of pores per inch.

[0109] Additionally, when the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may be about 10 vol% to about 60 vol%. When the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may be about 10 vol% to about 50 vol%. When the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may be about 10 vol% to about 50 vol%. When the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may be about 20 vol% to about 60 vol%. When the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may be about 30 vol% to about 60 vol%. When the first frame (100) and the second frame (200) are composed of the skeletal part (10) and the open pore (20), the porosity of the first frame (100) and the second frame (200) may exceed about 10 vol%.

[0110] Since the first frame (100) and the second frame (200) have the same porosity and / or porosity as above, the first frame (100) and the second frame (200) can effectively flow process gas while having appropriate mechanical strength.

[0111] The porosity of the first frame (100) and the second frame (200) may be lower than the porosity of the support portion. The porosity of the first frame (100) and the second frame (200) may be lower than the porosity of the support portion by about 5 vol% to about 30 vol%. The porosity of the first frame (100) and the second frame (200) may be lower than the porosity of the support portion by about 10 vol% to about 30 vol%.

[0112] A wafer boat according to an embodiment includes the open pore (20) and the skeletal portion (10). The skeletal portion (10) has a wire shape, and the open pore (20) can be disposed between the skeletal portions (10).

[0113] Accordingly, the process gas can flow smoothly through the open pores (20). That is, the process gas can flow smoothly through the open pores (20).

[0114] In particular, the open pore (20) and the skeletal portion (10) may be included in a support portion for supporting the semiconductor substrate. Accordingly, process gas can be easily supplied to the semiconductor substrate through the open pore (20).

[0115] In addition, since the wafer boat according to the embodiment includes the open pore (20), the process gas can flow smoothly throughout, and the temperature inside the chamber can be uniform.

[0116] In particular, the support member can support the edge portion of the semiconductor substrate. At this time, since the support member includes the open pore (20), the temperature of the edge portion of the semiconductor substrate can be made uniform. Accordingly, the wafer boat according to the embodiment can effectively process the edge portion of the semiconductor substrate.

[0117] Accordingly, the wafer boat according to the embodiment can uniformly process the entire surface of the semiconductor substrate.

[0118] In addition, the open pores (20) can relieve stress caused by heat. Accordingly, since the wafer boat according to the embodiment includes the open pores (20), thermal deformation can be minimized even at high temperatures.

[0119] Referring to FIGS. 6 to 12, a wafer boat according to an embodiment can be manufactured by the following process.

[0120] As illustrated in FIG. 6, a polymer precursor (13) is prepared. The polymer precursor (13) may include polymer fibers. The polymer precursor (13) may include a porous polymer matrix. The polymer precursor (13) may include a polymer nonwoven fabric.

[0121] The polymer precursor (13) may include a resin selected from the group consisting of polyurethane, polyethylene, polypropylene, polyester, cellulose, polyvinyl chloride, or polyvinyl acetate.

[0122] The diameter of the fiber included in the polymer precursor (13) may be about 3 µm to about 1000 µm. The diameter of the fiber included in the polymer precursor (13) may be about 3 µm to about 500 µm. The diameter of the fiber included in the polymer precursor (13) may be about 30 µm to about 300 µm.

[0123] The porosity of the polymer precursor (13) may be about 40 vol% to about 90 vol%. The porosity of the polymer precursor (13) may be about 50 vol% to about 90 vol%. The porosity of the polymer precursor (13) may be about 60 vol% to about 90 vol%.

[0124] Subsequently, as illustrated in FIGS. 7 and 8, the polymer precursor (13) is impregnated into a curable resin composition. Accordingly, a curable resin layer (14) can be formed. The curable resin layer (14) can be formed within the polymer precursor (13).

[0125] The above-mentioned curable resin layer (14) can surround the fibers included in the polymer precursor (13). The above-mentioned curable resin layer (14) can be coated on the outer surface of the fibers included in the polymer precursor (13). That is, the above-mentioned curable resin composition can be coated on the inside of the polymer precursor (13) and cured to form the above-mentioned curable resin layer (14). The above-mentioned curable resin composition can be coated on the outer surface of the fibers included in the polymer precursor (13).

[0126] The above curable resin composition may include at least one thermosetting resin selected from the group consisting of furfuryl alcohol resin, epoxy resin, or phenol resin. Additionally, the above curable resin composition may include an organic solvent.

[0127] Afterward, the coated curable resin composition can be cured. By the curing process, the curable resin layer (14) can be formed. The curing process can be carried out at a temperature of about 150°C to about 200°C for about 5 minutes to about 60 minutes.

[0128] The thickness of the curable resin layer (14) may be about 3 µm to about 1000 µm. The thickness of the curable resin layer (14) may be about 3 µm to about 500 µm. The thickness of the curable resin layer (14) may be about 30 µm to about 300 µm.

[0129] As shown in FIGS. 9 and 10, the polymer precursor (13) on which the curable resin layer (14) is formed undergoes a carbonization process and a vitrification process. Accordingly, the core portion (11) can be formed.

[0130] The carbonization process may be carried out in an inert gas atmosphere such as argon or nitrogen gas. The polymer precursor (13) having the curable resin layer (14) formed thereon is placed in a chamber, and the carbonization process may be carried out in the inert gas atmosphere at a temperature of about 800°C to about 1000°C for about 5 minutes to about 180 minutes.

[0131] Afterward, the carbonized polymer precursor (13) may undergo the vitrification process. The vitrification process may be carried out in an inert gas atmosphere. The carbonized polymer precursor (13) is placed in a chamber, and the vitrification process may be carried out in the inert atmosphere at a temperature of about 1800°C to about 2000°C for about 5 minutes to about 180 minutes.

[0132] As shown in FIGS. 11 and 12, the coating layer is formed on the core portion (11). The coating layer can be formed by a chemical vapor deposition process.

[0133] In order for the coating layer to be formed, the core part (11) is placed in the reaction chamber. Subsequently, a silicon-based precursor and a carbon-based precursor are introduced into the reaction chamber.

[0134] The silicon-based precursor may include a silane-based compound. The silane-based compound may be selected from at least one of the group consisting of silane (SiH4), monochlorosilane (SiH3Cl), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), or tetrachlorosilane (SiCl4).

[0135] The above carbon-based precursor may be selected from at least one group consisting of methane (CH4), propane (C3H8), or acetylene (C2H2).

[0136] The carrier gas for supplying the silicon-based precursor and the carbon-based precursor to the reaction chamber may be argon or hydrogen gas.

[0137] In the above chemical vapor deposition process, the process temperature may be about 1000°C to about 1200°C.

[0138] In addition, the coating portion (12) formed by the chemical vapor deposition process can be heat-treated. The heat treatment process can be carried out at a temperature of about 1300°C to about 1800°C. Accordingly, the coating portion (12) can be formed.

[0139] The support member, the column member, the first frame (100), and the second frame (200) can be formed by the process of FIGS. 6 to 12 as described above. Subsequently, the support member, the column member, the first frame (100), and the second frame (200) can be fastened to each other or joined to each other by adhesive.

[0140] In addition, at least two of the support member, the column member (310, 320, 330), the first frame (100), and the second frame (200) can be formed integrally with each other as described above by the process of FIGS. 6 to 12.

[0141] That is, at least one of the above support member, the above column member, the above first frame (100) and the above second frame (200) is manufactured by the above process and may have a structure including the above skeletal member (10) and the above open pore (20).

[0142] In addition, in the support member, the surface in direct contact with the semiconductor substrate may be sandblasted.

[0143] In addition, the support member may be oxidized heat treated at a temperature of about 1000°C to about 1400°C.

[0144] In addition, the support member may be surface-treated with an etching solution. The etching solution may include K3Fe(CN)6 and KOH.

[0145] Referring to FIG. 13, a wafer boat according to another embodiment may include a first Euro (401).

[0146] The support member (400) may include the first fluid path (401). The first fluid path (401) may penetrate the support member (400). The first fluid path (401) may penetrate the support member (400) in an up-and-down direction.

[0147] The diameter of the first flow path (401) may be about 1 mm to about 10 mm. The diameter of the first flow path (401) may be about 10 mm to about 20 mm. The diameter of the first flow path (401) may be about 5 mm to about 15 mm.

[0148] Additionally, the column portion (310) may include a second flow path (301). The second flow path (301) may extend in a horizontal direction. The second flow path (301) may extend into a slot (500) between the support portions (400).

[0149] The diameter of the second flow path (301) may be about 1 mm to about 10 mm. The diameter of the second flow path (301) may be about 10 mm to about 20 mm. The diameter of the second flow path (301) may be about 5 mm to about 15 mm.

[0150] Since the wafer boat according to the embodiment includes the first flow path (401) and the second flow path (301), the process gas can flow smoothly. That is, the process gas can flow smoothly through the first flow path (401) and the second flow path (301).

[0151] In particular, the first Euro (401) may be included in the support member (400). Accordingly, the process gas can be easily supplied to the semiconductor substrate through the first Euro (401).

[0152] In addition, since the semiconductor device manufacturing device according to the embodiment includes the open pore (20), the process gas can flow smoothly throughout, and the temperature inside the chamber can be uniform.

[0153] At this time, since the support member includes the first Euro (401), the temperature of the edge portion of the semiconductor substrate can be made uniform. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively process the edge portion of the semiconductor substrate.

[0154] Accordingly, the semiconductor device manufacturing apparatus according to the embodiment can uniformly process the entire surface of the semiconductor substrate.

[0155] Referring to FIG. 14, the first Euro (402) may be extended in a direction inclined with respect to the direction in which the support member (400) is extended. That is, the first Euro (402) may be inclined with respect to the horizontal direction.

[0156] The angle (θ) between the direction in which the first Euro (402) extends and the direction in which the support member extends may be approximately 45° to approximately 80°. The angle (θ) between the direction in which the first Euro (402) extends and the direction in which the support member (400) extends may be approximately 55° to approximately 75°.

[0157] Since the first Euro (402) is inclined as described above, the process gas at the edge portion of the semiconductor substrate can be circulated more smoothly.

[0158] Referring to FIG. 15, the first frame (100) may include a third flow path (101). The third flow path (101) may penetrate the first frame (100). The third flow path (101) may penetrate the first frame (100) in an up-and-down direction. The third flow path (101) may extend from the upper surface of the first frame (100) to the lower surface.

[0159] Referring to FIG. 16, the second frame (200) may include a fourth channel (201). The fourth channel (201) may penetrate the second frame (200). The fourth channel (201) may penetrate the second frame (200) in an up-and-down direction. The fourth channel (201) may extend from the upper surface of the second frame (200) to the lower surface.

[0160] Since the first frame (100) includes the first Euro (401), it can uniformly process the semiconductor substrate placed at the very bottom.

[0161] Since the second frame (200) includes the second Euro (301), the semiconductor substrate placed on top can be processed uniformly.

[0162] Additionally, at least one of the support member (400), the column member (310), the first frame (100), and the second frame (200) may include silicon carbide powder and a binder. That is, at least one of the support member, the column member, the first frame (100), and the second frame (200) may be composed of silicon carbide powder and a binder.

[0163] The silicon carbide powder may contain silicon carbide as a main component. The silicon carbide powder may contain α-SiC and / or β-SiC.

[0164] The silicon carbide powder may contain silicon carbide in an amount of about 90 wt% or more based on the total weight. The silicon carbide powder may contain silicon carbide in an amount of about 95 wt% or more based on the total weight. The silicon carbide powder may contain silicon carbide in an amount of about 99 wt% or more based on the total weight.

[0165] The silicon carbide powder may have an average diameter (D50) of about 0.5 μm to about 150 μm. The silicon carbide powder may have an average diameter (D50) of about 1 μm to about 100 μm. The silicon carbide powder may have an average diameter (D50) of about 5 μm to about 100 μm.

[0166] The above binder can bind the silicon carbide powders together. The binder is placed between the silicon carbide powders. The binder can be inserted between the silicon carbide powders. The binder can bond the silicon carbide powders together. The binder and the silicon carbide powders can be integrated together.

[0167] The above binder may include silicon carbide. The above binder may include α-SiC and / or β-SiC. The above binder may be formed by the reaction of a carbon-based binder and molten silicon. Additionally, the above binder may include residual carbon and / or residual silicon.

[0168] Furthermore, the features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Moreover, the features, structures, effects, etc. exemplified in each embodiment may be combined or modified and implemented in other embodiments by a person skilled in the art to which the embodiments belong. Therefore, details regarding such combinations and modifications should be interpreted as being included within the scope of the present invention.

[0169] Although the invention has been described above with reference to embodiments, this is merely illustrative and does not limit the invention. Those skilled in the art will understand that various modifications and applications not exemplified above are possible within the scope of the essential characteristics of the embodiments. For example, each component specifically shown in the embodiments may be modified and implemented. Furthermore, differences related to such modifications and applications should be interpreted as being included within the scope of the invention as defined in the appended claims. Explanation of the symbols

[0170] First frame (100) 2nd frame (200) First column section (310) Second column section (320) Third column section (330) First support member (410) Skeletal part (10) Open construction (20)

Claims

Claim 1 A semiconductor device manufacturing apparatus comprising: a skeleton portion; and an open pore disposed within the skeleton portion, wherein the skeleton portion comprises a core portion having an extended shape; and a coating portion disposed around the core portion, wherein the core portion comprises carbon, the coating portion comprises silicon carbide, and the skeleton portion comprises a fiber having a diameter of 100 μm to 2000 μm. Claim 2 delete Claim 3 A semiconductor device manufacturing apparatus according to claim 1, wherein the core portion comprises a transition metal in an amount of 0.1 ppm to 50 ppm. Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 delete

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