Substrate processing apparatus and substrate processing method

Abstract

A substrate processing device comprises a processing tank having a wall partitioning an internal space for storing a processing liquid, a lifter for holding a substrate and immersing it in the processing liquid, a plurality of processing liquids each discharging a processing liquid into the internal space of the processing tank from a plurality of different locations within the processing tank, a heater having a plurality of heaters each heating a plurality of different regions of the wall, and a controller for individually controlling the discharge of the processing liquid from a plurality of processing liquid nozzles and also for individually controlling the output of the plurality of heaters. The controller may individually control the output of the plurality of heaters according to the discharge state of the processing liquid from the plurality of processing liquid nozzles.

Description

Technology Field

[0001] This application claims priority based on Japanese patent application No. 2024-031344 filed on March 1, 2024, and the entire contents of this application are incorporated herein by reference. Background Technology

[0002] The present invention relates to a substrate processing apparatus and a substrate processing method for performing processing on a substrate using a processing solution. Examples of substrates to be processed include semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices and organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic discs, substrates for optical magnetic discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.

[0003] A substrate processing device that processes multiple substrates by immersing them in a processing liquid stored in a processing tank has been in use for some time, and an example thereof is disclosed in Japanese Patent Publication No. 2014-103297. The substrate processing device of Japanese Patent Publication No. 2014-103297 has a processing tank having an overflow tank formed at the upper outer periphery of a storage tank with an open upper end, a processing liquid circulation unit, and a substrate conveying means. A processing liquid is stored in the storage tank, and multiple substrates are immersed in the processing liquid. A processing liquid inlet outlet is formed at the bottom of the storage tank, and a processing liquid outlet is formed at the bottom of the overflow tank. By the processing liquid circulation unit, the processing liquid is sucked from the processing liquid outlet of the overflow tank and supplied to the processing liquid inlet outlet of the storage tank, thereby circulating the processing liquid. The substrate conveying means is configured by horizontally mounting four substrate holders on the lower end of an arm that is free to move up and down, and holds multiple substrates in a vertical position with a predetermined spacing between them. By lowering the substrate holders by the conveying arm, multiple substrates can be immersed in the processing liquid stored in the reservoir, and by raising the substrate holders by the conveying arm, multiple substrates can be removed from the processing liquid. A rubber heater is attached to the wall of the reservoir. The rubber heater heats the wall of the reservoir, thereby heating the processing liquid inside the reservoir to a predetermined temperature. The problem to be solved

[0004] However, in the prior art of Japanese Patent Publication No. 2014-103297, the uniformity of the treatment within the main body of the substrate (e.g., uniformity of the amount of etching) is not necessarily sufficient and there is room for improvement.

[0005] Therefore, one embodiment of the present invention provides a substrate processing apparatus and a substrate processing method capable of improving the uniformity of processing within the main surface of a substrate. means of solving the problem

[0006] One embodiment of the present invention provides a substrate processing apparatus and a substrate processing method having the features exemplified below.

[0007] 1. A treatment tank having walls that partition an internal space for storing the treatment liquid, and

[0008] A lifter having a holding portion for holding a substrate, and immersing the substrate held in the holding portion into a processing liquid retained in the internal space, and

[0009] A plurality of processing liquid nozzles, each discharging a processing liquid into the internal space from a plurality of different locations within the processing tank, and

[0010] A heater having a plurality of heaters, each heating a different plurality of regions of the above wall, and

[0011] A substrate processing apparatus comprising a controller that individually controls the discharge of a processing liquid from the plurality of processing liquid nozzles and also individually controls the output of the plurality of heaters.

[0012] According to this configuration, the discharge of the processing liquid from multiple different locations is individually controlled, and the heating of multiple different areas of the wall of the processing tank is also individually controlled. As a result, it is possible to apply the processing liquid within the processing tank uniformly to each part of the main surface of the substrate, and accordingly, the uniformity of the processing within the main surface of the substrate can be improved.

[0013] 2. A substrate processing apparatus described in claim 1, wherein the controller individually controls the output of the plurality of heaters according to the discharge state of the processing liquid from the plurality of processing liquid nozzles.

[0014] According to this configuration, the heating state of multiple different regions of the wall of the treatment tank is controlled according to the discharge state of the treatment liquid from multiple different locations. By doing so, an appropriate heating state according to the discharge state of the treatment liquid can be realized, making it possible to uniformly apply the treatment liquid within the treatment tank to each part of the main surface of the substrate, and accordingly, the uniformity of the treatment within the main surface of the substrate can be improved.

[0015] 3. A substrate processing apparatus described in claim 1 or 2, wherein the controller individually controls the output of the plurality of heaters to heat the processing liquid in the discharge area of ​​the processing liquid nozzle that has stopped discharging the processing liquid among the plurality of processing liquid nozzles (specifically, an area near the discharge port of the processing liquid nozzle).

[0016] According to this configuration, the processing liquid in the discharge area of ​​the processing liquid nozzle, which is stopped from discharge, can be heated, so the temperature of the processing liquid can be locally controlled by a heater in an area where temperature control by the supply of processing liquid is difficult. By doing so, temperature non-uniformity of the processing liquid within the processing tank can be suppressed, thereby improving the uniformity of the processing within the main surface of the substrate.

[0017] 4. A substrate processing apparatus described in any one of claims 1 to 3, wherein the controller individually controls the discharge / stop of a processing liquid by the plurality of processing liquid nozzles, and individually controls the output of the plurality of heaters such that the amount of heat generated by the heater closest to the processing liquid nozzle that is discharging the processing liquid is small (e.g., power off), and the amount of heat generated by the heater closest to the processing liquid nozzle that is not discharging the processing liquid is large (e.g., power on).

[0018] With this configuration, heating by the heater is weak near the processing liquid nozzle that is discharging the processing liquid, and heating by the heater is strong near the processing liquid nozzle that is not discharging the processing liquid. As a result, localized heating by the heater can be appropriately controlled according to the degree of temperature control by the supply of the processing liquid, and as a result, temperature non-uniformity within the processing tank can be suppressed. This allows for the improvement of uniformity of processing within the main surface of the substrate.

[0019] 5. The above wall includes a first side wall and a second side wall facing each other, and a bottom wall, and

[0020] The plurality of heaters includes a first sidewall heater for heating the first sidewall, a second sidewall heater for heating the second sidewall, and a bottom wall heater for heating the bottom wall.

[0021] The plurality of processing liquid nozzles comprises a first sidewall nozzle that discharges a processing liquid from the first sidewall toward the inside of the internal space, a second sidewall nozzle that discharges a processing liquid from the second sidewall toward the inside of the internal space, and a bottom wall nozzle that discharges a processing liquid from the bottom wall toward the inside of the internal space.

[0022] The above controller is,

[0023] A first sidewall discharge control that discharges a processing liquid from the first sidewall nozzle and also stops the output of the first sidewall heater,

[0024] A second sidewall discharge control that discharges a processing liquid from the second sidewall nozzle and also stops the output of the second sidewall heater, and

[0025] A substrate processing apparatus described in any one of claims 1 to 4, which performs at least one of a bottom wall discharge control that discharges a processing liquid from the bottom wall nozzle and stops the output of the bottom wall heater.

[0026] In the first sidewall discharge control, the output of the first sidewall heater is stopped because the temperature is controlled by the processing liquid discharged from the first sidewall nozzle in the vicinity of the first sidewall nozzle. Also, in the second sidewall discharge control, the output of the second sidewall heater is stopped because the temperature is controlled by the processing liquid discharged from the second sidewall nozzle in the vicinity of the second sidewall nozzle. Likewise, in the bottom wall discharge control, the output of the bottom wall heater is stopped because the temperature is controlled by the processing liquid discharged from the bottom wall nozzle in the vicinity of the bottom wall nozzle. In this way, the output of the heater can be appropriately controlled according to the discharge of the processing liquid, and accordingly, the uniformity of the processing within the main surface of the substrate can be improved.

[0027] 6. A substrate processing apparatus described in claim 5, wherein the controller stops the discharge of the processing liquid from the second sidewall nozzle and also makes the second sidewall heater a heating state when simultaneously executing the first sidewall discharge control and the bottom wall discharge control.

[0028] According to this configuration, the area near the second sidewall nozzle where the processing liquid is not discharged is heated by the second sidewall heater. By doing so, temperature non-uniformity of the processing liquid within the processing tank can be suppressed, thereby improving the uniformity of the processing within the main surface of the substrate.

[0029] 7. A substrate processing apparatus described in claim 5 or 6, wherein the controller stops the discharge of the processing liquid from the first sidewall nozzle and the second sidewall nozzle when performing the bottom wall discharge control, and also causes the first sidewall heater and the second sidewall heater to be in a heating state.

[0030] According to this configuration, the areas near the first sidewall nozzle and the second sidewall nozzle, respectively, where the processing liquid is not discharged, are heated by the first sidewall heater and the second sidewall heater, respectively. By doing so, temperature non-uniformity of the processing liquid within the processing tank can be suppressed, thereby improving the uniformity of the processing within the main surface of the substrate.

[0031] 8. The wall comprises a pair of end walls facing an arrangement direction which is a predetermined horizontal direction, a pair of side walls coupled to the pair of end walls facing an intersection direction which is a horizontal direction that intersects (typically orthogonal) the arrangement direction, and a bottom wall coupled to the pair of end walls and the pair of side walls.

[0032] The above-mentioned holding member maintains a plurality of substrates in an upright position and arranges them in the above-mentioned arrangement direction, and

[0033] The lifter has a back portion connected to the retaining portion, and immerses the plurality of substrates in a processing liquid within the processing tank while the back portion is interposed between the plurality of substrates and a first end wall, which is one of the pair of end walls.

[0034] The plurality of heaters comprises a single-wall heater disposed on the first single-wall and a plurality of zone heaters disposed on at least one of the pair of side walls and the bottom wall in each of the plurality of regions divided with respect to the arrangement direction, and the heater does not have a heater disposed on the second single-wall, which is the other of the pair of single-walls,

[0035] The above controller is a substrate processing device described in any one of claims 1 to 7, which individually controls the output of the plurality of zone heaters.

[0036] According to this configuration, the treatment tank has a pair of end walls, a pair of side walls, and a bottom wall, and a treatment liquid is stored in the internal space partitioned by these. Then, by immersing a plurality of substrates held by a lifter into the treatment liquid stored in the treatment tank, treatment with the treatment liquid can be performed on a plurality of substrates collectively. While the plurality of substrates are immersed in the treatment liquid, the back portion of the lifter is interposed between the plurality of substrates and the first end wall. More specifically, the back portion of the lifter is interposed between the substrate closest to the first end wall among the plurality of substrates and the first end wall.

[0037] In the treatment tank, a heater is installed to heat the treatment liquid contained therein by heating the walls constituting the treatment tank. Specifically, a first wall heater is installed on one of the first walls facing the arrangement direction, and this wall heater heats the first wall. In addition, a plurality of zone heaters are each disposed in a plurality of regions divided with respect to the arrangement direction, and each zone heater heats the wall where the zone heater is disposed, that is, at least one of a pair of side walls and bottom walls. While a wall heater is disposed on the first wall, no heater is disposed on the second wall. Therefore, the second wall is not subjected to direct heating by the heater. Consequently, there is a possibility that a temperature distribution with a gradient with respect to the arrangement direction may occur in the treatment liquid contained in the treatment tank.

[0038] Therefore, the zone heater heats at least one of a pair of side walls and bottom walls in each of the plurality of regions divided with respect to the arrangement direction, and they are also individually controlled by a controller. Thus, since heating for the plurality of regions divided with respect to the arrangement direction can be individually controlled, the processing liquid in the processing tank can be appropriately heated in the region near the first end wall and the region near the second end wall, respectively. Specifically, a uniform temperature distribution with a small gradient with respect to the arrangement direction can be achieved. In this way, the uniformity of processing for a plurality of substrates can be improved.

[0039] In addition, the above standing posture is typically a vertical posture in which the main surface of the substrate follows the vertical direction. Also, the holding portion of the lifter typically holds a plurality of substrates in parallel so that the main surfaces of adjacent substrates face each other. Typically, the normal direction of the main surface of the substrate follows the arrangement direction.

[0040] Additionally, the controller may additionally control the single-wall heaters individually. Also, the single-wall heater is typically disposed on the outer surface of the first single wall. Likewise, the zone heater is typically disposed on the outer surface of at least one of the pair of side walls and the bottom wall. And, no heater is disposed on the outer surface of the second single wall.

[0041] The number of divisions in the area regarding the above arrangement direction is at least 2, and preferably 3 or more. By placing zone heaters in each of the areas divided into 3 or more and controlling them individually, the temperature distribution of the processing liquid regarding the arrangement direction can be made more uniform. That is, in the area near the first end wall which is heated by the end wall heater and also has a lifter interposed between it and the substrate, the area near the second end wall which is not heated by the heater, and the intermediate area between them, the walls constituting the processing tank can be appropriately heated individually.

[0042] 9. The plurality of zone heaters comprises a first zone heater disposed in the region closest to the first end wall among the plurality of regions, and a second zone heater disposed in the region closest to the second end wall among the plurality of regions.

[0043] A substrate processing apparatus described in claim 8, wherein the controller controls the output of the plurality of zone heaters such that the second zone heater has a greater amount of heat generation (more specifically, a amount of heat generation per unit length in the arrangement direction) than the first zone heater.

[0044] According to this configuration, a large amount of heat can be supplied to the treatment liquid in the treatment tank in the area closer to the second wall where the short wall heater is not installed, compared to the area closer to the first short wall where the short wall heater is installed. By doing so, the temperature distribution of the treatment liquid with respect to the arrangement direction can be made uniform.

[0045] 10. A substrate processing apparatus described in claim 8 or 9, further comprising an outer tank having a storage space for receiving a processing liquid overflowing from the processing tank, wherein the storage space has an end space with a depth greater than or equal to the depth of the inner space of the processing tank in an area facing the outer surface of the second end wall.

[0046] According to this configuration, by overflowing the processing liquid from the processing tank to the outer tank, the processing liquid is supplied to the processing tank, and the processing liquid within the processing tank is circulated and replaced, thereby allowing processing of multiple substrates to be performed. The storage space of the outer tank has an end space in the area facing the outer surface of the second end wall that is substantially equal to or deeper than the depth of the internal space of the processing tank. This end space may, for example, overlap with the entire second end wall when viewed in the arrangement direction. Such a deep end space has the advantage of increasing the circulation flow rate when, for example, the processing liquid is pumped out from the outer tank and circulated to the processing tank through a circulation path.

[0047] Typically, a pump is installed in the circulation path. If the inlet end of the circulation path is positioned deep within the storage space of the outer tank—that is, near the bottom of the end space—it is possible to avoid the inlet end of the circulation path being exposed to the air and resulting in a liquid interruption, even when a high-capacity pump is used to increase the circulation flow rate.

[0048] 11. Additionally includes a cover for opening and closing the opening of the above-mentioned treatment tank, and

[0049] The above heater is a substrate processing device described in any one of claims 8 to 10, further comprising a cover heater disposed on the cover.

[0050] The opening of the processing tank is typically partitioned by the upper edge of the pair of end walls and the pair of side walls, and the plurality of substrates are moved in and out of the internal space of the processing tank by the lifter through this opening. According to the above configuration, the cover is heated by a cover heater disposed on the cover of the processing tank, so the processing liquid can be heated from above. This allows the cooling of the processing liquid to be suppressed and the temperature distribution of the processing liquid to be further uniform.

[0051] 12. At least one of the plurality of zone heaters has a plurality of heater portions divided with respect to the vertical direction, and the controller controls the plurality of heater portions individually, a substrate processing apparatus described in any one of claims 8 to 11.

[0052] According to this configuration, the amount of heat generated by multiple heater sections divided in the vertical direction of the zone heater can be individually controlled. By doing so, the temperature distribution of the processing liquid in the vertical direction can also be made uniform. This allows for the uniformity of processing within the main surface of each substrate.

[0053] 13. A step of immersing a substrate in a processing liquid stored in a processing tank having a wall partitioning an internal space for storing the processing liquid, and

[0054] A discharge control step for individually controlling the discharge of a processing liquid into the internal space from multiple different locations within the processing tank by a controller, and

[0055] A substrate processing method comprising a heating control step in which a plurality of heaters, each heating a different plurality of regions of the wall, are individually controlled by the controller.

[0056] 14. With respect to this substrate processing method, one or more of the features described above with respect to the substrate processing apparatus may be combined. Effects of the invention

[0057] The above-described or other objects, features, and effects of the present invention will become clear from the description of the embodiments described below with reference to the accompanying drawings. Brief explanation of the drawing

[0058] FIG. 1 is a conceptual diagram for explaining an example of the configuration of a substrate processing device related to one embodiment of the present invention. FIG. 2 is a perspective view for explaining an example of the configuration of a lifter. FIG. 3 is a perspective view illustrating an example of the configuration of a treatment tank. FIG. 4 is a block diagram illustrating the control system of a single wall heater, a first side wall heater, a second side wall heater, and a bottom wall heater. Figures 5A to 5D are drawings for explaining an example of the relationship between the discharge control of the processing liquid from the processing liquid nozzle and the control of the heater (heating control). Figure 6A is a flowchart illustrating an example of processing. Figure 6B is a flowchart illustrating another example of processing. FIG. 7 is a drawing for explaining a second embodiment of the present invention. FIG. 8 is a drawing for explaining a third embodiment of the present invention. FIG. 9 is a drawing for explaining a fourth embodiment of the present invention. Specific details for implementing the invention

[0059] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a substrate processing apparatus related to one embodiment of the present invention. The substrate processing apparatus (1) is a batch-type apparatus capable of processing a plurality of substrates (W) (e.g., one lot of substrates consisting of 25 or 50 sheets) in a batch with a processing solution. In this embodiment, the substrate (W) is substantially circular. One typical example of a substantially circular substrate (W) is a semiconductor wafer.

[0060] A substrate processing device (1) comprises a processing tank (2) in which a processing liquid for immersing a plurality of substrates (W) is stored in an internal space, a lifter (3) that supports a plurality of substrates (W) arranged in a predetermined arrangement direction (R1) within the processing tank (2), a plurality of processing liquid nozzles (4) that supply (more specifically discharge) the processing liquid into the processing tank (2), and a processing liquid supply mechanism (5) that supplies the processing liquid to the plurality of processing liquid nozzles (4). The substrate processing device (1) further comprises an outer tank (7) (overflow tank) that receives the processing liquid overflowing from the processing tank (2). The substrate processing device (1) further comprises a lifter driving mechanism (6) that moves the lifter (3) up and down, immerses a plurality of substrates (W) supported by the lifter (3) in the processing liquid stored in the processing tank (2), or pulls up a plurality of substrates (W) from the processing liquid. Additionally, the substrate processing device (1) is equipped with a controller (10) for controlling a processing fluid supply mechanism (5), a lifter driving mechanism (6), etc. The controller (10) includes a processor (CPU) and a memory device, and is configured or programmed to execute various control processes described below by having the processor execute a program stored in the memory device.

[0061] The treatment liquid supply mechanism (5) includes a fresh liquid supply pipe (12) that supplies unused treatment liquid from a treatment liquid source (11) to a treatment tank (2), and a circulation pipe (13) that forms a circulation path through the treatment tank (2). An opening / closing valve (18) is installed in the fresh liquid supply pipe (12), and this opening / closing valve (18) is controlled to open / close by a controller (10). One end of the circulation pipe (13) is connected to the bottom of the outer tank (7) and is branched into a plurality of branch pipe sections (14) corresponding to a plurality of treatment liquid nozzles (4), and the branch pipe sections (14) are each connected to a plurality of treatment liquid nozzles (4).

[0062] In the circulation pipe (13), a pump (15), an inline heater (16), and a filter (17) are interposed between the outer tank (7) and the branching position to the branch pipe section (14), and in this embodiment, they are arranged in the order described above, in the direction from the outer tank (7) toward the processing liquid nozzle (4). The pump (15) and the inline heater (16) are controlled by a controller (10). The pump (15) discharges the processing liquid from the outer tank (7) toward the processing liquid nozzle (4). The inline heater (16) is an example of a temperature controller that regulates the processing liquid passing through the circulation pipe (13) to an appropriate temperature. The filter (17) removes foreign substances from the processing liquid passing through the circulation pipe (13).

[0063] A flow rate adjustment unit (20) is interposed and mounted in each of the multiple branch pipe sections (14) each connected to the multiple processing liquid nozzles (4). Each flow rate adjustment unit (20) includes at least an opening / closing valve and, if necessary, additionally includes a flow meter, a flow rate adjustment valve, etc. The controller (10) controls the opening / closing valve of the flow rate adjustment unit (20) to turn on / off, thereby controlling the discharge / stopping of the processing liquid from the processing liquid nozzles (4). In addition, the controller (10) may remove the opening of the flow rate adjustment valve provided in the flow rate adjustment unit (20) according to the flow rate measured by the flow meter provided in the flow rate adjustment unit (20), and thereby control the flow rate of the processing liquid supplied to the processing liquid nozzles (4).

[0064] The treatment liquid stored in the treatment tank (2) is a chemical solution or rinse solution, typically a chemical solution such as an etching solution. Examples of chemical solutions include dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydronitrate (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide, organic acid (e.g., citric acid, oxalic acid), organic alkali (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid and hydrogen peroxide mixture (SPM), ammonia and hydrogen peroxide mixture (SC1), hydrochloric acid and hydrogen peroxide mixture (SC2), isopropyl alcohol (IPA), surfactants, corrosion inhibitors, and hydrophobic agents. The substrate treatment using the chemical solution may be an etching treatment or a cleaning treatment. As an example, the nitride film (silicon nitride film) formed on the main surface of the substrate (W) may be etched by phosphoric acid using a substrate treatment device (1).

[0065] FIG. 2 is a perspective view for explaining an example configuration of a lifter (3). The lifter (3) is raised by a lifter driving mechanism (6) between the processing position shown in FIG. 1 and FIG. 2 and the waiting position above the processing tank (2). The processing position is a position where a plurality of substrates (W) supported by the lifter (3) are located in the internal space of the processing tank (2) and thus are immersed in the processing liquid stored in the processing tank (2). The waiting position is a position where a plurality of substrates (W) supported by the lifter (3) are located outside the processing tank (2) and thus are lifted upward from the processing liquid stored in the processing tank (2).

[0066] In this embodiment, the lifter (3) has a back plate (31) (back portion), a central support portion (32), and a pair of side support portions (33). The back plate (31) is a plate-shaped member extending in the depth direction of the processing tank (2), and in this embodiment, it extends vertically along the inner surface of one wall (short wall (51)) constituting the rectangular processing tank (2). The central support portion (32) and the pair of side support portions (33) are examples of support portions that support a plurality of substrates (W).

[0067] The central support member (32) and the pair of side support members (33) are connected to the back plate (31) and extend horizontally from the bottom of the back plate (31) respectively, and extend parallel to each other. The central support member (32) and the pair of side support members (33) are configured to support a plurality of substrates (W) by aligning them in a predetermined arrangement direction (R1) so that the main surfaces of adjacent substrates (W) face each other with a gap. In this embodiment, the arrangement direction (R1) is the horizontal direction in which the central support member (32) and the pair of side support members (33) extend. In this embodiment, the central support member (32) and the pair of side support members (33) are configured to support a plurality of substrates (W) at equal intervals along the arrangement direction (R1). When viewed in the arrangement direction (R1), a pair of side support members (33) are arranged on both sides with the central support member (32) in between. The central support member (32) supports the central lower edge of the substrate (W), and the pair of side support members (33) support the lower edges of the left and right sides of the substrate (W). Thus, each substrate (W) is supported in an upright position (more specifically, an upright position in which the main surface follows the vertical direction). Multiple substrates (W) are supported on the lifter (3) in an upright position in which the main surfaces are parallel to each other. In this embodiment, each main surface of the substrate (W) is substantially perpendicular to the arrangement direction (R1). Therefore, multiple substrates (W) are supported in a parallel upright position, and the normal direction of the main surface of each substrate (W) follows the arrangement direction (R1).

[0068] As shown in FIG. 2, in this embodiment, six treatment liquid nozzles (4) are formed. Specifically, the plurality of treatment liquid nozzles (4) include two treatment liquid nozzles that extend in the arrangement direction (R1) along the bottom surface of the treatment tank (2), namely, a first bottom wall nozzle (B1) and a second bottom wall nozzle (B2). The first bottom wall nozzle (B1) and the second bottom wall nozzle (B2) are spaced apart and arranged parallel to each other in a horizontal direction perpendicular to the arrangement direction (R1). In addition, the plurality of treatment liquid nozzles (4) include two treatment liquid nozzles (4) that extend in the arrangement direction (R1) along one side wall (61) of the treatment tank (2), namely, a first side wall upper nozzle (T1) and a first side wall lower nozzle (M1). The first sidewall upper nozzle (T1) and the first sidewall lower nozzle (M1) are arranged parallel to each other with a gap in the vertical direction. Additionally, the plurality of treatment liquid nozzles (4) include two treatment liquid nozzles (4) that extend in the arrangement direction (R1) along the other sidewall (62) of the treatment tank (2), namely the second sidewall upper nozzle (T2) and the second sidewall lower nozzle (M2). The second sidewall upper nozzle (T2) and the second sidewall lower nozzle (M2) are arranged parallel to each other with a gap in the vertical direction.

[0069] Each treatment liquid nozzle (4) is composed of a discharge pipe extending parallel to the arrangement direction (R1), and its tip is closed, and its base is connected to the tip of the branch pipe section (14) of the circulation pipe (13). In this embodiment, the closed tip of the treatment liquid nozzle (4) is positioned on the side of the back plate (31) of the lifter (3), and the base connected to the branch pipe section (14) is positioned on the side opposite to the back plate (31).

[0070] The processing liquid nozzle (4) has a plurality of discharge ports (41) that are spaced apart in the arrangement direction (R1). The plurality of discharge ports (41) are aligned along the arrangement direction (R1). In this embodiment, the main discharge direction of the processing liquid from each discharge port (41) is directed toward the substrate (W), that is, toward the inside of the internal space of the processing tank (2). The main discharge direction of the processing liquid from each discharge port (41) is typically a direction parallel to the main surface of the substrate (W), that is, a direction that intersects (more specifically, orthogonally) the arrangement direction (R1).

[0071] FIG. 3 is a perspective view for explaining an example configuration of a treatment tank (2). The treatment tank (2) has a pair of end walls (51, 52) facing the arrangement direction (R1), a pair of side walls (61, 62) each connected to the two edges of the pair of end walls (51, 52) facing the intersection direction, which is a horizontal direction that intersects (orthogonal in this embodiment) the arrangement direction (R1), and a bottom wall (53) connected to the lower edges of the pair of end walls (51, 52) and the pair of side walls (61, 62). Thus, the treatment tank (2) forms a container, for example, in the shape of a rectangular body, having an opening (54) that opens upward, and partitions an internal space for storing a treatment liquid inside. Around the treatment tank (2), an outer tank (7) is formed to receive the treatment liquid overflowing from the treatment tank (2). In this embodiment, the treatment tank (2) and the outer tank (7) are formed integrally and are made of, for example, quartz.

[0072] Of the pair of end walls (51, 52), the end wall closer to the back plate (31) of the lifter (3) (see FIG. 2) is called the first end wall (51), and the other end is called the second end wall (52). Also, of the pair of side walls (61, 62), one end wall is called the first side wall (61), and the other end is called the second side wall (62). An upwardly open opening (54) is partitioned by the upper edges of the first end wall (51), the second end wall (52), the first side wall (61), and the second side wall (62). Through this opening (54), the lifter (3) takes a plurality of substrates (W) into and out of the processing tank (2), thereby immersing the substrates (W) in the processing liquid in the processing tank (2) or lifting the substrates (W) out of the processing liquid.

[0073] The outer tank (7) partitions the outer side of the treatment tank (2) into a ring-shaped storage space (70) that surrounds the entire perimeter of the treatment tank (2) when viewed in plan. This storage space (70) has a first end space (71), a second end space (72), a first side space (73), and a second side space (74) that are respectively opposite to the first end wall (51), the second end wall (52), the first side wall (61), and the second side wall (62).

[0074] The first end space (71) overlaps with the upper part of the internal space of the treatment tank (2) when viewed in the arrangement direction (R1), but does not overlap with the lower part of the internal space of the treatment tank (2). Likewise, the first side space (73) and the second side space (74) overlap with the upper part of the internal space of the treatment tank (2) when viewed in the horizontal direction orthogonal to the arrangement direction (R1), but do not overlap with the lower part of the internal space of the treatment tank (2). In short, the bottom wall (7a) of the outer tank (7) is located above the bottom wall (53) of the treatment tank (2) in the portion dividing the first end space (71), the first side space (73), and the second side space (74), and the first end space (71), the first side space (73), and the second side space (74) are shallower than the inner space of the treatment tank (2).

[0075] Meanwhile, the second end space (72) overlaps with the entire internal space of the treatment tank (2) when viewed in the arrangement direction (R1). In short, the bottom wall (7a) of the outer tank (7) is located at the same height as or lower than the bottom wall (53) of the treatment tank (2) in the part that partitions the second end space (72), and the depth of the second end space (72) is substantially equal to or greater than the depth of the internal space of the treatment tank (2). Thus, the storage space (70) of the outer tank (7) has a large volume in the second end space (72). Accordingly, the widths of the first end space (71), the first side space (73), and the second side space (74) can be reduced, thereby reducing the occupied area of ​​the outer tank (7). In this embodiment, the first end space (71), the first side space (73), and the second side space (74) have substantially equal widths, and the second end space (72) has a larger width. Thus, the processing liquid overflowing from the entire circumference of the processing tank (2) is recovered and guided to the second end space (72), which has a larger volume, for storage.

[0076] The inlet end (13a) of the circulation pipe (13) is positioned near the bottom of the second end space (72) and thus positioned at a sufficient depth from the liquid surface of the outer tank (7). By doing so, the treatment liquid can be discharged from the treatment liquid nozzle (4) at a sufficient flow rate while avoiding the inflow of air into the circulation pipe (13), and accordingly, the treatment efficiency (e.g., etching rate) by the treatment liquid can be increased.

[0077] A heater (8) is installed to heat the treatment liquid stored in the treatment tank (2). The heater (8) includes a single-wall heater (84), a first-sided wall heater (81), a second-sided wall heater (82), and a bottom-wall heater (83).

[0078] More specifically, on the outer surface of the first end wall (51) of the treatment tank (2), a end wall heater (84) is positioned lower than the bottom wall (7a) of the outer tank (7). The end wall heater (84) heats the first end wall (51), thereby heating the treatment liquid in contact with the inner surface of the first end wall (51). Since the outer tank (7) faces the second end wall (52) entirely, a heater that directly heats the second end wall (52) is not provided.

[0079] Also, on the outer surface of the first side wall (61), a first side wall heater (81) is positioned lower than the bottom wall (7a) of the outer tank (7). The first side wall heater (81) heats the first side wall (61) and, accordingly, heats the treatment liquid in contact with the inner surface of the first side wall (61). Likewise, on the outer surface of the second side wall (62), a second side wall heater (82) is positioned lower than the bottom wall (7a) of the outer tank (7). The second side wall heater (82) heats the second side wall (62) and, accordingly, heats the treatment liquid in contact with the inner surface of the second side wall (62). Likewise, on the outer surface (bottom surface) of the bottom wall (53) of the treatment tank (2), a bottom wall heater (83) is positioned. The bottom wall heater (83) heats the bottom wall (53) and, accordingly, heats the treatment liquid in contact with the inner surface (upper surface) of the bottom wall (53).

[0080] As shown in FIG. 1, a cover (55) is provided for opening and closing the opening (54) of the treatment tank (2). The cover (55) comprises a first cover member (56) and a second cover member (57). The first cover member (56) is freely rotatable around a first rotation axis (56a) that extends horizontally from the outside of the outer tank (7) near the first side wall (61). The second cover member (57) is freely rotatable around a second rotation axis (57a) that extends horizontally from the outside of the outer tank (7) near the second side wall (62). In this embodiment, the rotation axes (56a, 57a) are parallel to the arrangement direction (R1). The first cover member (56) and the second cover member (57) each form an auto cover that opens and closes the opening (54) by rotating around the rotation axis (56a, 57a) in conjunction with the up and down movement of the lifter (3). That is, when the lifter (3) is in the upper position holding the substrate (W) above the processing tank (2), the first cover member (56) and the second cover member (57) are in the open position, opening the opening (54) upward. On the other hand, when the lifter (3) is in the lower position holding the substrate (W) within the processing tank (2), the first cover member (56) and the second cover member (57) are in the closed position, closing the opening (54) of the processing tank (2). By doing so, the temperature change of the processing liquid within the processing tank (2) is suppressed, allowing for stable and efficient substrate processing.

[0081] FIG. 4 is a block diagram illustrating the control system of a single wall heater (84), a first side wall heater (81), a second side wall heater (82), and a bottom wall heater (83).

[0082] The single-wall heater (84), the first sidewall heater (81), the second sidewall heater (82), and the bottom wall heater (83) can typically be constructed by rubber heaters. A rubber heater includes, for example, a metal heater wire and a silicone cover covering it. Temperature sensors (94, 91, 92, 93) (typically thermocouples) are placed in the single-wall heater (84), the first sidewall heater (81), the second sidewall heater (82), and the bottom wall heater (83). The temperature sensors (94, 91, 92, 93) each detect the temperature of the single-wall heater (84), the first sidewall heater (81), the second sidewall heater (82), and the bottom wall heater (83). In doing so, the temperature sensor (94) indirectly detects the temperature of the first single wall (51) that the single-wall heater (84) contacts. Likewise, temperature sensors (91, 92, 93) indirectly detect the temperature of the sidewalls (61, 62) and bottom wall (53) that the first sidewall heater (81), the second sidewall heater (82), and the bottom wall heater (83) respectively come into contact with.

[0083] Power supply to the single wall heater (84), the first side wall heater (81), the second side wall heater (82), and the bottom wall heater (83) is controlled by a controller (10). Temperature sensors (94, 91, 92, 93) are connected to the controller (10). The controller (10) controls the output (supply power) of the single wall heater (84), the first side wall heater (81), the second side wall heater (82), and the bottom wall heater (83) based on a predetermined set temperature and a detected temperature detected by the temperature sensors (94, 91, 92, 93).

[0084] The set temperatures for the single-wall heater (84), the first side-wall heater (81), the second side-wall heater (82), and the bottom-wall heater (83) may be the same or different. Typically, it is preferable to determine the set temperatures for the single-wall heater (84), the first side-wall heater (81), the second side-wall heater (82), and the bottom-wall heater (83) based on experiments or simulations conducted in advance so that the temperature distribution of the treatment liquid in the treatment tank (2) becomes constant (so that deviations can be minimized).

[0085] FIGS. 5A to 5D are drawings for explaining an example of the relationship between the discharge control of the processing liquid from the processing liquid nozzle (4) and the control (heating control) of the heater (8). The controller (10) individually controls the opening and closing of the shut-off valve provided in the flow rate adjustment unit (20), and accordingly, individually controls the discharge of the processing liquid from a plurality of processing liquid nozzles (4). In addition, the control of the single-wall heater (84) is not shown in FIGS. 5A to 5D. For example, in any state of FIGS. 5A to 5D, the controller (10) energizes the single-wall heater (84) and simultaneously performs heating by the single-wall heater (84).

[0086] In the control state of FIG. 5A, all processing liquid nozzles (4) are in a discharge state to discharge processing liquid, and the first side wall heater (81), the second side wall heater (82), and the bottom wall heater (83) are all in an energized state (on). Accordingly, while heating the first side wall (61), the second side wall (62), and the bottom wall (53), processing liquid is discharged inward from all of the first side wall (61), the second side wall (62), and the bottom wall (53).

[0087] In the control state of FIG. 5B, the first bottom wall nozzle (B1) and the second bottom wall nozzle (B2) (hereinafter collectively referred to as "bottom wall nozzles (B1, B2)") are in a discharge state, the first side wall upper nozzle (T1) and the first side wall lower nozzle (M1) (hereinafter collectively referred to as "first side wall nozzles (T1, M1)") are in a discharge stop state, and the second side wall upper nozzle (T2) and the second side wall lower nozzle (M2) (hereinafter collectively referred to as "second side wall nozzles (T2, M2)") are also in a discharge stop state. Meanwhile, regarding the heater (8), the bottom wall heater (83) is turned off, the first side wall heater (81) is turned on, and the second side wall heater (82) is also turned on. Accordingly, the controller (10) discharges the processing liquid from the bottom wall nozzles (B1, B2) and performs bottom wall discharge control to stop the output of the bottom wall heater (83), while at the same time, stops the discharge of the processing liquid from the first side wall nozzles (T1, M1) and the second side wall nozzles (T2, M2) and turns the first side wall heater (81) and the second side wall heater (82) into a heating state. In this way, the treatment liquid is discharged inward from the bottom wall (53) while stopping the heating of the bottom wall (53), and on the other hand, heating is performed by the side wall heaters (81, 82) with respect to the first side wall (61) and the second side wall (62) from which the treatment liquid is not discharged.

[0088] In the control state of FIG. 5C, the bottom wall nozzles (B1, B2) are in a discharge state, the first side wall nozzle (T1, M1) is in a discharge state, and the second side wall nozzle (T2, M2) is in a discharge stop state. Meanwhile, regarding the heater (8), the bottom wall heater (83) is in a non-energized state (off), the first side wall heater (81) is in a non-energized state (off), and the second side wall heater (82) is in an energized state (on). Accordingly, the controller (10) performs bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles (B1, B2) and stop the output of the bottom wall heater (83), and also performs first side wall discharge control to discharge the processing liquid from the first side wall nozzle (T1, M1) and stop the output of the first side wall heater (81). Meanwhile, the controller (10) stops the discharge of the treatment liquid from the second sidewall nozzle (T2, M2) and also sets the second sidewall heater (82) to a heating state. In this way, the treatment liquid is discharged inward from the bottom wall (53) while stopping the heating of the bottom wall (53), and the treatment liquid is discharged inward from the first sidewall (61) while stopping the heating of the first sidewall (61), and meanwhile, heating is performed by the second sidewall heater (82) with respect to the second sidewall (62) where the treatment liquid is not discharged.

[0089] In the control state of FIG. 5D, the bottom wall nozzles (B1, B2) are in a discharge state, the first side wall nozzle (T1, M1) is in a discharge stop state, and the second side wall nozzle (T2, M2) is in a discharge state. Meanwhile, regarding the heater (8), the bottom wall heater (83) is in a non-energized state (off), the first side wall heater (81) is in an energized state (on), and the second side wall heater (82) is in a non-energized state (off). Accordingly, the controller (10) performs bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles (B1, B2) and stop the output of the bottom wall heater (83), and also performs second side wall discharge control to discharge the processing liquid from the second side wall nozzle (T2, M2) and stop the output of the second side wall heater (82). Meanwhile, the controller (10) stops the discharge of the treatment liquid from the first sidewall nozzle (T1, M1) and also sets the first sidewall heater (81) to a heating state. In this way, the treatment liquid is discharged inward from the bottom wall (53) while stopping the heating of the bottom wall (53), and the treatment liquid is discharged inward from the second sidewall (62) while stopping the heating of the second sidewall (62), and meanwhile, heating is performed by the first sidewall heater (81) with respect to the first sidewall (61) where the treatment liquid is not discharged.

[0090] In the control state of FIGS. 5B to FIGS. 5D, heater heating is stopped for the wall where the processing liquid nozzle (4) in the processing liquid discharge state is placed, and heater heating is performed for the wall where the processing liquid nozzle (4) in the processing liquid discharge stop state is placed. Since the processing liquid is supplied in a state heated by the inline heater (16) (typically a state higher than room temperature), the discharge area of ​​the processing liquid nozzle (4) in the processing liquid discharge state is heated by the amount of heat possessed by the processing liquid being discharged. Therefore, heater heating is stopped for the wall where the processing liquid nozzle (4) in the processing liquid discharge state is placed. On the other hand, since high-temperature processing liquid is not supplied to the vicinity of the processing liquid nozzle (4) in the processing liquid discharge stop state, heat from the supplied processing liquid is not supplied. Therefore, heater heating is performed for the wall in the vicinity of the processing liquid nozzle (4) in the processing liquid discharge stop state. In this way, the temperature distribution in the treatment liquid stored in the treatment tank (2), more specifically, the temperature distribution within the plane intersecting the arrangement direction (R1), is made uniform. As a result, the treatment liquid at a uniform temperature comes into contact with the main surface of each substrate (W), thereby improving the uniformity within the plane of the substrate treatment.

[0091] FIG. 6A is a flowchart for explaining an example of processing and shows an example of controlled processing by a controller (10). Before the substrate (W) to be processed is immersed, the controller (10) controls all processing liquid nozzles (4) to be in a discharge state and also controls all heaters (84, 81, 82, 83) to be energized (steps S1, S2). From this state, the controller (10) controls the lifter driving mechanism (6) to lower the lifter (3) to the processing position. Thereby, a plurality of substrates (W) held on the lifter (3) are immersed in the processing liquid (step S3). Once the substrate (W) is immersed, the controller (10) waits for a predetermined time (e.g., 5 minutes) required for the temperature of the processing liquid in the processing tank (2) to stabilize (step S4). Meanwhile, the control state shown in FIG. 5A (total discharge / total heating state), that is, all processing liquid nozzles (4) are in the processing liquid discharge state, and all heaters (84, 81, 82, 83) are also controlled to be energized (on).

[0092] When the above predetermined time has elapsed (step S4: YES), the controller (10) cycles through the following first control state (step S5, S6), second control state (step S7, S8), and third control state (step S9, S10). In addition, in any control state, the single-wall heater (84) is controlled to be energized (on).

[0093] First control state: This is the bottom wall discharge / side wall heating state shown in FIG. 5B. The bottom wall nozzles (B1, B2) are controlled to a discharge state, and the first side wall nozzles (T1, M1) and the second side wall nozzles (T2, M2) are controlled to a discharge stop state (step S5). The bottom wall heater (83) is controlled to a non-energized state (off), and the first side wall heater (81) and the second side wall heater (82) are controlled to an energized state (on) (step S6).

[0094] Second control state: This is the bottom wall / first side wall discharge / second side wall heating state shown in FIG. 5C. The bottom wall nozzles (B1, B2) are controlled to a discharge state, the first side wall nozzles (T1, M1) are controlled to a discharge state, and the second side wall nozzles (T2, M2) are controlled to a discharge stop state (step S7). The bottom wall heater (83) is controlled to a non-energized state (off), the first side wall heater (81) is controlled to a non-energized state (off), and the second side wall heater (82) is controlled to an energized state (on) (step S8).

[0095] Third control state: This is the bottom wall / second side wall discharge / first side wall heating state shown in FIG. 5D. The bottom wall nozzles (B1, B2) are controlled to a discharge state, the first side wall nozzles (T1, M1) are controlled to a discharge stop state, and the second side wall nozzles (T2, M2) are controlled to a discharge state (step S9). The bottom wall heater (83) is controlled to a non-energized state (off), the first side wall heater (81) is controlled to an energized state (on), and the second side wall heater (82) is controlled to a non-energized state (off) (step S10).

[0096] The first control state, the second control state, and the third control state may be executed sequentially for a predetermined time (e.g., 2 minutes) and also cyclically for at least one cycle (e.g., 6 cycles) (step S11). The execution order of the three control states is arbitrary.

[0097] In addition, the first control state may be omitted, and the second control state and the third control state may be executed alternately. The discharge of the processing liquid from the bottom wall nozzles (B1, B2) may not be stopped.

[0098] After executing a preset number of cycles of this cyclic switching control of the discharge / heating state (step S11: YES), the controller (10) again controls to the full discharge / full heating state shown in FIG. 5A (steps S12, S13), and maintains the state for a predetermined time (e.g., 3 minutes).

[0099] After that, the controller (10) controls the lifter driving mechanism (6) to raise the lifter (3) and pulls the substrate (W) held on the lifter (3) up to the upper side of the processing liquid (step S14).

[0100] FIG. 6B is a flowchart for explaining another example of processing and shows an example of controlled processing by a controller (10). Before the substrate (W) to be processed is immersed, the controller (10) controls all processing liquid nozzles (4) to be in a discharge state and also controls all heaters (84, 81, 82, 83) to be energized (steps S1, S2). From this state, the controller (10) controls the lifter driving mechanism (6) to lower the lifter (3) to the processing position. Thereby, a plurality of substrates (W) held on the lifter (3) are immersed in the processing liquid (step S3). Once the substrate (W) is immersed, the controller (10) waits for a predetermined time (e.g., 5 minutes) required for the temperature of the processing liquid in the processing tank (2) to stabilize (step S4). Meanwhile, the control state shown in FIG. 5A (total discharge / total heating state), that is, all processing liquid nozzles (4) are in the processing liquid discharge state, and all heaters (84, 81, 82, 83) are also controlled to be energized (on).

[0101] When the above predetermined time has elapsed (step S4: YES), the controller (10) cyclically switches to the following first control state (step S25, S26), second control state (step S27, S28), and third control state (step S29, S30). In addition, in any control state, the single-wall heater (84) is controlled to be energized (on).

[0102] First control state: The bottom wall nozzle (B1, B2) is controlled to a discharge state, and the first side wall nozzle (T1, M1) and the second side wall nozzle (T2, M2) are controlled to a discharge stop state (step S25). The bottom wall heater (83) is controlled to a non-energized state (off), and the first side wall heater (81) and the second side wall heater (82) are controlled to an energized state (on) (step S26).

[0103] Second control state: The bottom wall nozzle (B1, B2) is controlled to a discharge stop state, the first side wall nozzle (T1, M1) is controlled to a discharge state, and the second side wall nozzle (T2, M2) is controlled to a discharge stop state (step S27). The bottom wall heater (83) is controlled to an energized state (on), the first side wall heater (81) is controlled to a non-energized state (off), and the second side wall heater (82) is controlled to an energized state (on) (step S28).

[0104] Third control state: The bottom wall nozzle (B1, B2) is controlled to a discharge stop state, the first side wall nozzle (T1, M1) is controlled to a discharge stop state, and the second side wall nozzle (T2, M2) is controlled to a discharge state (step S29). The bottom wall heater (83) is controlled to an energized state (on), the first side wall heater (81) is controlled to an energized state (on), and the second side wall heater (82) is controlled to a non-energized state (off) (step S30).

[0105] The first control state, the second control state, and the third control state may be executed sequentially for a predetermined time (e.g., 2 minutes) and also cyclically for at least one cycle (e.g., 6 cycles). The execution order of the three control states is arbitrary.

[0106] After executing a preset number of cycles of this cyclic switching control of the discharge / heating state (step S11: YES), the controller (10) again controls to the full discharge / full heating state shown in FIG. 5A (steps S12, S13), and maintains the state for a predetermined time (e.g., 3 minutes).

[0107] After that, the controller (10) controls the lifter driving mechanism (6) to raise the lifter (3) and pulls the substrate (W) held on the lifter (3) up to the upper side of the processing liquid (step S14).

[0108] As described above, the substrate processing device (1) of this embodiment has a plurality of processing liquid nozzles (4) that discharge processing liquid from different positions within the processing tank (2) into the internal space of the processing tank (2), and a heater (8) that has a plurality of heaters (84, 81, 82, 83) that heat different areas of the wall of the processing tank (2). And, the controller (10) individually controls the discharge of processing liquid from the plurality of processing liquid nozzles (4) and also individually controls the output of the plurality of heaters (84, 81, 82, 83). By doing so, it becomes possible to uniformly apply the processing liquid within the processing tank (2) to each part of the main surface of the substrate (W), and accordingly, the uniformity of processing within the main surface of the substrate (W) can be improved.

[0109] In addition, in this embodiment, the controller (10) individually controls the output of a plurality of heaters (81, 82, 83) according to the discharge state of the processing liquid from a plurality of processing liquid nozzles (4). By doing so, an appropriate heating state according to the discharge state of the processing liquid can be realized, so it is possible to uniformly apply the processing liquid in the processing tank (2) to each part of the main surface of the substrate (W), and accordingly, the uniformity of the processing within the main surface of the substrate (W) can be improved.

[0110] Additionally, the controller (10) individually controls the output of a plurality of heaters (81, 82, 83) to heat the treatment liquid in the discharge area of ​​the treatment liquid nozzle (4) that has stopped discharging the treatment liquid among the plurality of treatment liquid nozzles (4). By doing so, the treatment liquid in the discharge area of ​​the treatment liquid nozzle (4) that has stopped discharging can be heated, so the temperature of the treatment liquid can be locally controlled by the heaters (81, 82, 83) in an area where temperature control by supplying the treatment liquid is difficult. By doing so, the temperature non-uniformity of the treatment liquid within the treatment tank (2) can be suppressed, thereby improving the uniformity of the treatment within the main surface of the substrate (W). The discharge area of ​​the treatment liquid nozzle (4) refers to the area near the discharge port (41) of the treatment liquid nozzle (4).

[0111] Additionally, the controller (10) individually controls the discharge / stopping of the treatment liquid by a plurality of treatment liquid nozzles (4), and individually controls the output of a plurality of heaters (81, 82, 83) so that the amount of heat generated by the heater closest to the treatment liquid nozzle (4) that is discharging the treatment liquid decreases (specifically, the amount of heat generated stops), and the amount of heat generated by the heater closest to the treatment liquid nozzle (4) that is not discharging the treatment liquid increases (specifically, the amount of heat generated). By doing so, local heating by the heaters (81, 82, 83) can be appropriately controlled according to the degree of temperature control by the supply of the treatment liquid, and as a result, temperature non-uniformity within the treatment tank (2) can be suppressed. By doing so, the uniformity of the treatment within the main surface of the substrate (W) can be improved.

[0112] In this embodiment, the plurality of heaters includes a first side wall heater (81) that heats the first side wall (61) of the treatment tank (2), a second side wall heater (82) that heats the second side wall (62) of the treatment tank (2), and a bottom wall heater (83) that heats the bottom wall (53) of the treatment tank (2). Additionally, the plurality of processing liquid nozzles (4) include a first side wall nozzle (T1, M1) that discharges processing liquid from the first side wall (61) toward the inside of the internal space of the processing tank (2), a second side wall nozzle (T2, M2) that discharges processing liquid from the second side wall (62) toward the inside of the internal space of the processing tank (2), and a bottom wall nozzle (B1, B2) that discharges processing liquid from the bottom wall (53) toward the inside of the internal space of the processing tank (2). And, the controller (10) can perform first side wall discharge control that discharges processing liquid from the first side wall nozzle (T1, M1) and also stops the output of the first side wall heater (81). Additionally, the controller (10) can perform a second side wall discharge control that discharges the processing liquid from the second side wall nozzle (T2, M2) and stops the output of the second side wall heater (82). Additionally, the controller (10) can perform a bottom wall discharge control that discharges the processing liquid from the bottom wall nozzle (B1, B2) and stops the output of the bottom wall heater (83).

[0113] In the first side wall discharge control, the temperature is controlled by the processing liquid discharged from the first side wall nozzle (T1, M1) in the vicinity of the first side wall nozzle (T1, M1), so the output of the first side wall heater (81) is stopped. Also, in the second side wall discharge control, the temperature is controlled by the processing liquid discharged from the second side wall nozzle (T2, M2) in the vicinity of the second side wall nozzle (T2, M2), so the output of the second side wall heater (82) is stopped. Likewise, in the bottom wall discharge control, the temperature is controlled by the processing liquid discharged from the bottom wall nozzle (B1, B2) in the vicinity of the bottom wall nozzle (B1, B2), so the output of the bottom wall heater (83) is stopped. In this way, the output of the heater can be appropriately controlled according to the discharge of the processing liquid, and thereby the uniformity of the processing within the main surface of the substrate (W) can be improved.

[0114] In the state of FIG. 5C, when the controller (10) simultaneously performs the first sidewall discharge control and the bottom wall discharge control, it stops the discharge of the processing liquid from the second sidewall nozzle (T2, M2) and also sets the second sidewall heater (82) to a heating state. Accordingly, the area near the second sidewall nozzle (T2, M2) where the processing liquid is not discharged is heated by the second sidewall heater (82). By doing so, the temperature non-uniformity of the processing liquid in the processing tank (2) can be suppressed, thereby improving the uniformity of the processing within the main surface of the substrate (W).

[0115] Also, in the state of FIG. 5B, the controller (10) performs bottom wall discharge control while stopping the discharge of the processing liquid from the first side wall nozzle (T1, M1) and the second side wall nozzle (T2, M2), and also sets the first side wall heater (81) and the second side wall heater (82) to a heating state. Accordingly, the areas near the first side wall nozzle (T1, M1) and the second side wall nozzle (T2, M2), respectively, where the processing liquid is not discharged, are heated by the first side wall heater (81) and the second side wall heater (82), respectively. By doing so, the temperature non-uniformity of the processing liquid in the processing tank (2) can be suppressed, and thus the uniformity of the processing within the main surface of the substrate (W) can be improved.

[0116] FIG. 7 is a drawing for explaining a second embodiment of the present invention. In this embodiment, the configuration of the heater (8) is different from the previously described embodiment. Specifically, the first sidewall heater (81) disposed on the outer surface of the first sidewall (61) includes a plurality of first sidewall zone heaters (81A, 81B, 81C). The plurality of first sidewall zone heaters (81A, 81B, 81C) heat the first sidewall (61) in each of the plurality of regions divided with respect to the arrangement direction (R1), and accordingly, heat the processing liquid in contact with the inner surface of the first sidewall (61). Likewise, the second sidewall heater (82) disposed on the outer surface of the second sidewall (62) includes a plurality of second sidewall zone heaters (82A, 82B, 82C). A plurality of second sidewall zone heaters (82A, 82B, 82C) heat the second sidewall (62) in each of the plurality of regions divided with respect to the arrangement direction (R1), and accordingly heat the treatment liquid in contact with the inner surface of the second sidewall (62). Likewise, a bottom wall heater (83) disposed on the outer surface (bottom surface) of the bottom wall (53) of the treatment tank (2) includes a plurality of bottom wall zone heaters (83A, 83B, 83C). A plurality of bottom wall zone heaters (83A, 83B, 83C) heat the bottom wall (53) in each of the plurality of regions divided with respect to the arrangement direction (R1), and accordingly heat the treatment liquid in contact with the inner surface (top surface) of the bottom wall (53).

[0117] In this embodiment, the arrangement areas of the plurality of first sidewall zone heaters (81A, 81B, 81C), the plurality of second sidewall zone heaters (82A, 82B, 82C), and the plurality of bottom wall zone heaters (83A, 83B, 83C) are divided at the same location with respect to the arrangement direction (R1). And the first sidewall zone heaters (81A, 81B, 81C), the second sidewall zone heaters (82A, 82B, 82C), and the bottom wall zone heaters (83A, 83B, 83C) at the same location with respect to the arrangement direction (R1) each constitute a plurality of strip-shaped zone heaters (85A, 85B, 85C). Accordingly, a plurality of zone heaters (85A, 85B, 85C) are provided to heat a pair of side walls (61, 62) and a bottom wall (53) in each of the plurality of regions divided with respect to the arrangement direction (R1). In this embodiment, a plurality (three in the illustrated example) of zone heaters (85A, 85B, 85C) are each disposed in a plurality of regions (three regions in the illustrated example) divided equally with respect to the arrangement direction (R1). Accordingly, the width of the plurality of zone heaters (85A, 85B, 85C) in the arrangement direction (R1) is substantially equal.

[0118] A single wall heater (84), a first side wall zone heater (81A, 81B, 81C), a second side wall zone heater (82A, 82B, 82C), and a bottom wall zone heater (83A, 83B, 83C) are equipped with a temperature sensor (94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C) (typically a thermocouple). The temperature sensors (94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C) each detect the temperature of the single wall heater (84), the first side wall zone heater (81A, 81B, 81C), the second side wall zone heater (82A, 82B, 82C), and the bottom wall zone heater (83A, 83B, 83C). By doing so, the temperature sensors (94) indirectly detect the temperature of the first single wall (51) that the single wall heater (84) contacts. Likewise, temperature sensors (91A, 91B, 91C) indirectly detect the temperature of the first sidewall (61) at the location where they come into contact, temperature sensors (92A, 92B, 92C) indirectly detect the temperature of the second sidewall (62) at the location where they come into contact, and temperature sensors (93A, 93B, 93C) indirectly detect the temperature of the bottom wall (53) at the location where they come into contact.

[0119] The power supply to the single wall heater (84), the first side wall zone heater (81A, 81B, 81C), the second side wall zone heater (82A, 82B, 82C), and the bottom wall zone heater (83A, 83B, 83C) is controlled by the controller (10). Temperature sensors (94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C) are connected to the controller (10). The controller (10) controls the output (supply power) of the single wall heater (84), the first side wall zone heater (81A, 81B, 81C), the second side wall zone heater (82A, 82B, 82C), and the bottom wall zone heater (83A, 83B, 83C) based on a predetermined set temperature and a detected temperature detected by a temperature sensor (94, 91A, 91B, 91C, 92A, 92B, 92C).

[0120] The set temperatures for the single wall heater (84), the first side wall zone heater (81A, 81B, 81C), the second side wall zone heater (82A, 82B, 82C), and the bottom wall zone heater (83A, 83B, 83C) may be the same or different. Typically, it is preferable to determine the set temperatures for the single wall heater (84), the first side wall zone heater (81A, 81B, 81C), the second side wall zone heater (82A, 82B, 82C), and the bottom wall zone heater (83A, 83B, 83C) based on experiments or simulations conducted in advance so that the distribution of the temperature of the treatment liquid in the treatment tank (2) in the arrangement direction (R1) becomes constant (so that deviations can be minimized).

[0121] In order to keep the temperature of the treatment liquid in the treatment tank (2) constant in the arrangement direction (R1), the controller (10) controls a plurality of zone heaters (85A, 85B, 85C) closest to the second end wall (52) (second zone heater, first side wall zone heater (81C), second side wall zone heater (82C), and bottom wall zone heater (83C)) such that the amount of heat generated (more specifically, the amount of heat generated per unit length of the arrangement direction (R1)) is greater than that generated by the zone heater (85A) closest to the first end wall (51) (first zone heater, first side wall zone heater (81A), second side wall zone heater (82A), and bottom wall zone heater (83A). This is because, while the first end wall (51) is heated by the end wall heater (84), the second end wall (52) This is because, since no heater is placed, the zone heater (85C) near the second end wall (52) must supply more heat to the treatment liquid than the zone heater (85A) near the first end wall (51). For example, the set temperature of the zone heater (85A) (first zone heater) closest to the first end wall (51) may be set to the first temperature, and the set temperature of the zone heater (85C) (second zone heater) closest to the second end wall (52) may be set to the second temperature, which is higher than the first temperature. By appropriately setting the first temperature and the second temperature, the temperature of the treatment liquid in the areas near the first end wall (51) and the second end wall (52), respectively, within the treatment tank (2) can be made almost the same.

[0122] As described above, according to this embodiment, by immersing a plurality of substrates (W) held by a lifter (3) in a processing liquid stored in a processing tank (2), processing with the processing liquid can be performed on the plurality of substrates (W) collectively. When the plurality of substrates (W) are immersed in the processing liquid, the back plate (31) (back portion) of the lifter (3) is interposed between the plurality of substrates (W) and the first end wall (51). In the processing tank (2), a heater (8) (end wall heater (84) and zone heater (85A, 85B, 85C)) is installed to heat the processing liquid stored inside by heating the walls constituting the processing tank (2). Specifically, an end wall heater (84) is installed to heat the first end wall (51), which is one of the end walls facing the arrangement direction (R1). In addition, a plurality of zone heaters (85A, 85B, 85C) are formed to heat at least one of a pair of side walls (61, 62) and a bottom wall (53).

[0123] While a wall heater (84) is provided to heat the first wall (51), no heater is installed on the second wall (52). Therefore, there is a possibility that a temperature distribution with a gradient with respect to the arrangement direction (R1) may occur in the treatment liquid stored in the treatment tank (2). Thus, zone heaters (85A, 85B, 85C) heat at least one of a pair of side walls (61, 62) and bottom wall (53) in each of the plurality of areas divided with respect to the arrangement direction (R1), and furthermore, they are individually controlled by a controller (10) (heater control unit). In this way, since the heating for the plurality of areas divided with respect to the arrangement direction (R1) can be individually controlled, the treatment liquid in the treatment tank (2) can be appropriately heated in the area close to the first wall (51) and the area close to the second wall (52), respectively. Specifically, the temperature distribution can be made uniform with a small gradient in the arrangement direction (R1). By doing so, the uniformity of processing for multiple substrates (W) can be improved.

[0124] More specifically, in this embodiment, the controller (10) controls the output of a plurality of zone heaters (85A, 85B, 85C) so that the heat output of the zone heater (85C) (second zone heater) closest to the second end wall (52) is greater than that of the zone heater (85A) (first zone heater) closest to the first end wall (51). By doing so, a large amount of heat can be supplied to the treatment liquid in the treatment tank (2) in the area closer to the second end wall (52) where no heater is placed, compared to the area closer to the first end wall (51) where the end wall heater (84) is placed. Thus, the distribution of the treatment liquid temperature with respect to the arrangement direction (R1) can be made uniform.

[0125] In addition, in this embodiment, zone heaters (85A, 85B, 85C) are each placed in three areas divided with respect to the arrangement direction (R1), and they are controlled individually. Accordingly, the walls constituting the processing tank (2) can be appropriately heated individually in the area near the first end wall (51), which is heated by the end wall heater (84) and where the back plate (31) of the lifter (3) is interposed between it and the substrate (W), the area near the second end wall (52) where no heater is placed, and the intermediate area between them. This makes the temperature distribution with respect to the arrangement direction (R1) uniform. Of course, the number of divisions in the area with respect to the arrangement direction (R1) may be 2 or 4 or more. As the number of divisions increases, it is easier to achieve a uniform temperature distribution, but since the configuration and control content of the controller (10) become more complex and the number of wiring processes increases, it is desirable to select a necessary and sufficient number of divisions.

[0126] In addition, in this embodiment, the controller (10) additionally controls the single-wall heater (84) individually. By doing so, the temperature distribution of the processing liquid with respect to the arrangement direction (R1) can be made more uniform.

[0127] In this embodiment, an outer tank (7) is installed to receive the processing liquid overflowing from the processing tank (2). By doing so, the processing liquid is overflowed from the processing tank (2) to the outer tank (7), thereby supplying the processing liquid to the processing tank (2), causing the processing liquid within the tank to flow and be replaced, and allowing for processing of a plurality of substrates (W). The storage space (70) of the outer tank (7) has a second end space (72) with a depth greater than or equal to the depth of the internal space of the processing tank (2), facing the outer surface of the second end wall (52). That is, the depth of the second end space (72) is substantially equal to or greater than the depth of the internal space of the processing tank (2). In this embodiment, the second end space (72) overlaps with the entire second end wall (52) when viewed in the arrangement direction (R1). By forming such a deep second end space (72), there is an advantage in that the circulating flow rate can be increased when the treatment liquid is drawn from the outer tank (7) and circulated to the treatment tank (2) through the circulation pipe (13). Specifically, when increasing the circulating flow rate using a high-capacity pump (15), if the inlet end (13a) of the circulation pipe (13) is placed at the bottom of the deep second end space (72), the inlet end (13a) of the circulation pipe (13) can be avoided from being exposed to the air and becoming liquid cut off.

[0128] Meanwhile, since a second end space (72) facing the second end wall (52) is formed, a heater cannot be placed on the outer surface of the second end wall (52). Therefore, there is a risk that a gradient with respect to the arrangement direction (R1) may occur in the temperature distribution of the treatment liquid in the treatment tank (2). Thus, in this embodiment, a plurality of zone heaters (85A, 85B, 85C) are placed in a plurality of areas divided by the arrangement direction (R1), and the plurality of zone heaters (85A, 85B, 85C) are individually controlled. By doing so, the temperature gradient in the arrangement direction (R1) can be suppressed, and a uniform temperature distribution of the treatment liquid in the treatment tank (2) can be realized.

[0129] FIG. 8 is a drawing for explaining a third embodiment of the present invention and shows a modified example of a zone heater (85A, 85B, 85C). In this embodiment, each first sidewall zone heater (81A, 81B, 81C) has a plurality of heater parts (81a, 81b, 81c) divided in the vertical direction. Likewise, each second sidewall zone heater (82A, 82B, 82C) has a plurality of heater parts (82a, 82b, 82c) divided in the vertical direction. And, the controller (10) controls the plurality of heater parts (81a, 81b, 81c; 82a, 82b, 82c) individually. By doing so, the temperature distribution in the processing liquid can be homogenized not only in the arrangement direction (R1) but also in the vertical direction. By doing so, not only can the processing of multiple substrates (W) be uniformized, but the processing within the main surface of each substrate (W) can also be uniformized.

[0130] In addition, in the example shown in Fig. 8, the number of divisions in the vertical direction is 3, but this number of divisions may be 2 or 4 or more.

[0131] Also, in the example shown in FIG. 8, all first sidewall zone heaters (81A, 81B, 81C) and all second sidewall zone heaters (82A, 82B, 82C) are divided with respect to the vertical direction, but only some of the sidewall zone heaters (e.g., the first sidewall zone heater (81B) and the second sidewall zone heater (82B) in the central area with respect to the arrangement direction (R1)) may be divided with respect to the vertical direction.

[0132] FIG. 9 is a drawing for illustrating a fourth embodiment of the invention. In this embodiment, a first cover heater (86) and a second cover heater (87) are respectively disposed on a first cover member (56) and a second cover member (57). The first cover heater (86) and the second cover heater (87) are individually energized by a controller (10) independently of the end wall heater (84), the first side wall heater (81), the second side wall heater (82), and the bottom wall heater (83). Since the treatment liquid in the treatment tank (2) can be heated from above by the first cover heater (86) and the second cover heater (87), the temperature distribution in the treatment liquid can be made more uniform. In particular, since the outer tank (7) does not have a heater, the temperature of the upper region inside the treatment tank (2) is prone to dropping, so heating from above by the first cover heater (86) and the second cover heater (87) effectively contributes to the uniformization of the temperature distribution. In this way, by heating the cover (55) of the treatment tank (2), the treatment liquid can be heated from above, thereby suppressing the cooling of the treatment liquid and further uniformizing the temperature distribution of the treatment liquid.

[0133] The features of this embodiment can also be combined with the aforementioned second and third embodiments.

[0134] Although embodiments of the invention have been described above, the invention may also be implemented in other forms.

[0135] For example, in the above-described embodiment, an example of controlling the heater on / off was explained, but the power supplied to the heater may be varied in steps or continuously to control the amount of heat generated by the heater in steps or continuously.

[0136] Also, the number and arrangement of the processing liquid nozzles (4) in the above-described embodiment are examples. Also, the main discharge direction of the processing liquid from the processing liquid nozzles (4) does not necessarily have to be directed toward the substrate (W). For example, the main discharge direction of the bottom wall nozzles (B1, B2) may be directed toward the center of the bottom wall (53) along a direction parallel to the main surface of the substrate (W), thereby forming an upward flow (up flow) of the processing liquid from the bottom wall (53) within the processing tank (2).

[0137] Although embodiments of the present invention have been described in detail, they are merely specific examples used to clarify the technical content of the present invention, and the present invention should not be interpreted as being limited to these specific examples, and the scope of the present invention is limited only by the appended claims.

Claims

Claim 1 A treatment tank having a wall partitioning an internal space for storing a treatment liquid; a lifter having a holding part for holding a substrate and immersing the substrate held in the holding part into the treatment liquid stored in the internal space; a plurality of treatment liquid nozzles each discharging a treatment liquid into the internal space from a plurality of different locations within the treatment tank; a heater having a plurality of heaters each heating a plurality of different regions of the wall; and a controller that individually controls the discharge of the treatment liquid from the plurality of treatment liquid nozzles and also individually controls the output of the plurality of heaters, wherein the wall includes a first side wall and a second side wall facing each other and a bottom wall, wherein the plurality of heaters include a first side wall heater for heating the first side wall, a second side wall heater for heating the second side wall, and a bottom wall heater for heating the bottom wall, and wherein the plurality of treatment liquid nozzles include a first side wall nozzle for discharging a treatment liquid from the first side wall toward the inside of the internal space and a second side wall for discharging a treatment liquid from the second side wall toward the inside of the internal space A substrate processing apparatus comprising a second sidewall nozzle for discharging a processing liquid and a bottomwall nozzle for discharging a processing liquid from the bottomwall toward the inside of the internal space, wherein the controller performs at least one of a first sidewall discharge control that discharges a processing liquid from the first sidewall nozzle and also stops the output of the first sidewall heater, a second sidewall discharge control that discharges a processing liquid from the second sidewall nozzle and also stops the output of the second sidewall heater, and a bottomwall discharge control that discharges a processing liquid from the bottomwall nozzle and also stops the output of the bottomwall heater. Claim 2 A substrate processing device according to claim 1, wherein the controller individually controls the output of the plurality of heaters according to the discharge state of the processing liquid from the plurality of processing liquid nozzles. Claim 3 A substrate processing device according to claim 1, wherein the controller individually controls the output of the plurality of heaters to heat the processing liquid in the discharge area of ​​the processing liquid nozzle that has stopped discharging the processing liquid among the plurality of processing liquid nozzles. Claim 4 A substrate processing apparatus according to claim 1, wherein the controller individually controls the discharge / stopping of the processing liquid by the plurality of processing liquid nozzles, and individually controls the output of the plurality of heaters such that the heat output of the heater closest to the processing liquid nozzle that is discharging the processing liquid is small, and the heat output of the heater closest to the processing liquid nozzle that is not discharging the processing liquid is large. Claim 5 delete Claim 6 A substrate processing device according to claim 1, wherein the controller stops the discharge of the processing liquid from the second sidewall nozzle and also makes the second sidewall heater a heating state when simultaneously executing the first sidewall discharge control and the bottom wall discharge control. Claim 7 A substrate processing device according to claim 1, wherein the controller stops the discharge of the processing liquid from the first sidewall nozzle and the second sidewall nozzle when performing the bottom wall discharge control, and also makes the first sidewall heater and the second sidewall heater into a heating state. Claim 8 A processing tank having a wall partitioning an internal space for storing a processing liquid; a lifting device having a holding member for holding a substrate and immersing the substrate held in the holding member into the processing liquid stored in the internal space; a plurality of processing liquid nozzles each discharging a processing liquid into the internal space from a plurality of different locations within the processing tank; a heating device having a plurality of heaters each heating a plurality of different regions of the wall; and a controller that individually controls the discharge of the processing liquid from the plurality of processing liquid nozzles and also individually controls the output of the plurality of heaters, wherein the wall has a pair of end walls facing an arrangement direction which is a predetermined horizontal direction, a pair of side walls coupled to the pair of end walls facing a cross direction which is a horizontal direction intersecting the arrangement direction, and a bottom wall coupled to the pair of end walls and the pair of side walls, wherein the holding member holds a plurality of substrates arranged in an upright position in the arrangement direction, and the lifting device has a back portion connected to the holding member, and the plurality of substrates and a first end wall which is one of the pair of end walls A substrate processing apparatus comprising: immersing a plurality of substrates in a processing liquid within a processing tank with the above-mentioned back portion interposed therebetween; wherein the plurality of heaters include a single-wall heater disposed on the first single-wall and a plurality of zone heaters disposed on at least one of the pair of side walls and the bottom wall in each of the plurality of regions divided with respect to the arrangement direction; wherein the heater does not have a heater disposed on the second single-wall, which is the other of the pair of single-walls; and wherein the controller individually controls the output of the plurality of zone heaters. Claim 9 A substrate processing apparatus according to claim 8, wherein the plurality of zone heaters comprises a first zone heater disposed in the region closest to the first end wall among the plurality of regions, and a second zone heater disposed in the region closest to the second end wall among the plurality of regions, and the controller controls the output of the plurality of zone heaters such that the heat output of the second zone heater is greater than that of the first zone heater. Claim 10 A substrate processing apparatus according to claim 8, further comprising an outer tank having a storage space for receiving a processing liquid overflowing from the processing tank, wherein the storage space has an end space with a depth greater than or equal to the depth of the inner space of the processing tank in an area facing the outer surface of the second end wall. Claim 11 A substrate processing apparatus according to claim 8, further comprising a cover for opening and closing the opening of the processing tank, and wherein the heater further comprises a cover heater disposed on the cover. Claim 12 In claim 8, at least one of the plurality of zone heaters has a plurality of heater portions divided with respect to the vertical direction, and the controller controls the plurality of heater portions individually, a substrate processing apparatus. Claim 13 The method comprises a step of immersing a substrate in a processing liquid stored in a processing tank having a wall partitioning an internal space for storing a processing liquid, a discharge control step of individually controlling a plurality of processing liquid nozzles by a controller for discharging the processing liquid into the internal space from a plurality of different locations within the processing tank, and a heating control step of individually controlling a plurality of heaters by the controller for heating a plurality of different regions of the wall, wherein the wall includes a first side wall and a second side wall facing each other and a bottom wall, wherein the plurality of heaters include a first side wall heater for heating the first side wall, a second side wall heater for heating the second side wall, and a bottom wall heater for heating the bottom wall, and wherein the plurality of processing liquid nozzles include a first side wall nozzle for discharging the processing liquid from the first side wall toward the inside of the internal space, a second side wall nozzle for discharging the processing liquid from the second side wall toward the inside of the internal space, and a bottom wall nozzle for discharging the processing liquid from the bottom wall toward the inside of the internal space. A substrate processing method comprising a bottom wall nozzle, wherein the controller performs at least one of a first side wall discharge control that discharges a processing liquid from the first side wall nozzle and also stops the output of the first side wall heater, a second side wall discharge control that discharges a processing liquid from the second side wall nozzle and also stops the output of the second side wall heater, and a bottom wall discharge control that discharges a processing liquid from the bottom wall nozzle and also stops the output of the bottom wall heater.

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