Inspection device and mounting bracket

Abstract

In an inspection device for inspecting a device to be inspected, the device to be inspected is a back-illuminated imaging device in which light is incident from a back side opposite to the side where the wiring layer is provided, and is formed on a device to be inspected. The inspection device has a mounting base that supports the device to be inspected in a manner facing the back side of the imaging device, and the mounting base is made of a light-transmitting material and has a top plate having a mounting surface on which the device to be inspected is mounted, an irradiation unit positioned opposite to the device to be inspected with the top plate in between and irradiating light toward the device to be inspected mounted on the mounting surface, and a temperature control unit that adjusts the temperature of the device to be inspected mounted on the mounting surface. The top plate has a pattern formed on at least one of the mounting surface or the opposite side that is made of a metal material and transmits light.

Description

Technology Field

[0001] The present disclosure relates to an inspection device and a mounting base. Background Technology

[0002] The inspection device of Patent Document 1 inspects an imaging device formed on a test object by irradiating light onto the imaging device and electrically contacting a contact terminal to the wiring layer of the imaging device. In Patent Document 1, light is irradiated from the back side of the imaging device, which is the side opposite to where the wiring layer is provided. The inspection device of Patent Document 1 comprises a mounting base formed of a light-transmitting member on which the test object is mounted in a manner facing the back side of the imaging device, and a light irradiation mechanism having a plurality of LEDs arranged to face the test object with the mounting base in between and directed toward the test object. Prior art literature

[0003] Japanese Patent Publication No. 2019-106491 The problem to be solved

[0004] The technology according to the present disclosure makes it possible to accurately measure the temperature of an imaging device without adversely affecting the light irradiated to the imaging device during inspection of a back-illuminated imaging device. means of solving the problem

[0005] One aspect of the present disclosure is an inspection device for inspecting a device to be inspected, wherein the device to be inspected is a back-illuminated imaging device in which light is incident from a back side opposite to the side on which a wiring layer is provided, and is formed on a device to be inspected, and the inspection device comprises a mounting plate that supports the device to be inspected in a manner facing the back side of the imaging device, wherein the mounting plate is made of a light-transmitting material and has a top plate having a mounting surface on which the device to be inspected is mounted, an irradiation unit disposed in a position facing the device to be inspected with the top plate in between and irradiating light toward the device to be inspected mounted on the mounting surface, and a temperature control unit that adjusts the temperature of the device to be inspected mounted on the mounting surface, and wherein the top plate has a pattern formed on at least one of the mounting surface or the opposite side thereof that is made of a metal material and transmits light. Effects of the invention

[0006] According to the present disclosure, in the inspection of a back-illuminated imaging device, the temperature of the imaging device can be accurately measured without adversely affecting the light irradiated to the imaging device. Brief explanation of the drawing

[0007] FIG. 1 is a plan view schematically illustrating the configuration of a substrate as an inspection target on which a back-illuminated imaging device is formed. FIG. 2 is a cross-sectional view schematically illustrating the configuration of a back-illuminated imaging device. FIG. 3 is a perspective view illustrating a schematic configuration of a probe as an inspection device according to a first embodiment. FIG. 4 is a front view illustrating a schematic configuration of a probe as an inspection device according to a first embodiment. Figure 5 is a cross-sectional view schematically illustrating the configuration of the stage. Figure 6 is a top view of the top plate. Figure 7 is a diagram illustrating the configuration of a circuit for measuring the temperature of a sensor pattern. Figure 8 is a diagram illustrating another example of the connection type of the sensor pattern and the current source. FIG. 9 is a cross-sectional view schematically illustrating the configuration of a stage of a probe as an inspection device according to a second embodiment. FIG. 10 is a diagram illustrating the configuration of a circuit regarding a sensor pattern in a second embodiment. Figure 11 is a drawing illustrating another example of an investigation unit. FIG. 12 is a cross-sectional view schematically illustrating the configuration of a stage of a probe as an inspection device according to a third embodiment. Specific details for implementing the invention

[0008] In a semiconductor manufacturing process, for example, a plurality of semiconductor devices having a predetermined circuit pattern are formed on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). The formed semiconductor devices are inspected for electrical characteristics and are sorted into good products and defective products. The inspection of the semiconductor devices is performed, for example, using an inspection device called a prober, in the substrate state before each semiconductor device is divided.

[0009] The inspection device is provided above a mounting base that supports a substrate, wherein a probe card having multiple needle-shaped contact terminals called probes is positioned above the board. During inspection, the probe card and the wafer to be mounted are brought close together, and each probe of the probe card comes into contact with each electrode of the semiconductor device formed on the substrate. In this state, an electrical signal is supplied to the semiconductor device from a test head provided on the upper part of the probe card, passing through each probe. Then, based on the electrical signal received by the test head from the semiconductor device through each probe, it is determined whether the semiconductor device is defective.

[0010] When the semiconductor device to be inspected is an imaging device such as a CMOS sensor, unlike other general semiconductor devices, the inspection is performed while irradiating light onto the imaging device.

[0011] In addition, recently, a back-illumination type has been developed as an imaging device that receives light incident from the back side opposite to the surface side where the wiring layer is formed.

[0012] In an inspection device for a back-illuminated imaging device, the mounting base supports a substrate in a manner facing the back surface of the imaging device. In addition, in an inspection device for a back-illuminated imaging device, the mounting base is made of a light-transmitting material and has a top plate having a mounting surface on which a substrate is mounted, and an irradiation unit disposed below the top plate and irradiating light toward the substrate mounted on the mounting surface.

[0013] The irradiation unit comprises, for example, a light guide plate having an opposing surface facing a substrate with a top plate in between, and a light source unit provided in a lateral outer region of the light guide plate and emitting light toward the light guide plate. In the irradiation unit, the light guide plate is radiated from the light source unit, and light incident from the side end surface of the light guide plate is reflected toward the opposing surface and emitted as planar light from the opposing surface. Furthermore, hereinafter, an irradiation unit into which light is incident from the side end surface of the light guide plate in this manner is referred to as a lateral incidence type irradiation unit.

[0014] In addition, during the inspection of a back-illuminated imaging device, a temperature control unit for adjusting the temperature of the imaging device may be provided on the mounting base of the inspection device so that the imaging device is kept constant at a predetermined temperature. The temperature control unit is provided, for example, below the top plate and below the lateral incidence type irradiation unit, and performs heating or cooling of the substrate through the top plate. In order to perform the temperature adjustment as described above, the temperature of the imaging device needs to be measured.

[0015] However, for the temperature measurement of the imaging device, if a temperature sensor, for example, consisting of a thermocouple, is provided on the mounting surface of the top plate, that is, the upper surface, there are cases where light from the irradiation unit is blocked by the temperature sensor.

[0016] In addition, as in the case of performing heating or cooling of the substrate by a temperature control unit provided below a lateral incidence type irradiation unit, a configuration is considered in which a temperature sensor is provided on the lower surface of the light guide plate to measure the temperature of the imaging device. However, in this configuration, if the light guide plate is formed of glass or the like, which is inexpensive but has low thermal conductivity, the temperature of the imaging device cannot be accurately measured.

[0017] Therefore, the technology according to the present disclosure makes it possible to accurately measure the temperature of an imaging device without adversely affecting the light irradiated to the imaging device during inspection of a back-illuminated imaging device.

[0018] Hereinafter, an inspection device and a mounting base according to the present embodiment will be described with reference to the drawings. Furthermore, in this specification and drawings, redundant descriptions are omitted for elements having substantially the same functional configuration by assigning the same reference numerals.

[0019] In the technology according to the present embodiment, since the device to be inspected is a back-illuminated imaging device, the back-illuminated imaging device will be described first.

[0020] [Back-illuminated imaging device]

[0021] FIG. 1 is a plan view schematically illustrating the configuration of a substrate as an inspection target on which a back-illuminated imaging device is formed, and FIG. 2 is a cross-sectional view schematically illustrating the configuration of a back-illuminated imaging device.

[0022] As shown in FIG. 1, a plurality of back-illuminated imaging devices (D) are formed on a wafer (W) which is an example of a substrate and has a roughly circular shape.

[0023] The back-illuminated imaging device (D) is a solid-state imaging element and, for example as shown in FIG. 2, has a photoelectric conversion unit (PD) which is a photodiode and a wiring layer (PL) comprising a plurality of wirings (PLa). In addition, light is incident on the back-illuminated imaging device (D) from the back side of the wafer (W), which is opposite to the front side where the wiring layer (PL) is provided. Then, the back-illuminated imaging device (D) receives the light incident from the back side of the wafer (W) at the photoelectric conversion unit (PD) after passing through an on-chip lens (L) and a color filter (F). The color filter (F) consists of a red color filter (FR), a blue color filter (FB), and a green color filter (FG).

[0024] Additionally, an electrode (E) is formed on the surface (Da) of the back-illuminated imaging device (D), that is, on the surface (W) of the wafer (W), and the electrode (E) is electrically connected to the wiring (PLa) of the wiring layer (PL). The wiring (PLa) is intended to input an electrical signal to a circuit element inside the back-illuminated imaging device (D) or to output an electrical signal from the same circuit element to the outside of the back-illuminated imaging device (D). The wiring layer (PL) may include a pixel transistor that controls a signal related to the photoelectric conversion unit.

[0025] (First embodiment)

[0026] [Inspection device]

[0027] Next, an inspection device according to the first embodiment will be described.

[0028] FIGS. 3 and FIGS. 4 are a perspective view and a front view, respectively, illustrating a schematic configuration of a probe (1) as an inspection device according to a first embodiment. In FIGS. 4, a portion thereof is shown in cross-section to illustrate the components of the probe (1) of FIGS. 3 that house the receiving chamber and loader described later.

[0029] The prober (1) performs an inspection of the electrical characteristics of each of the plurality of back-illuminated imaging devices (D) (hereinafter, the imaging devices (D) may be omitted) formed on the wafer (W). As shown in FIGS. 3 and 4, the prober (1) comprises a receiving chamber (2), a loader (3) positioned adjacent to the receiving chamber (2), and a tester (4) positioned to cover the receiving chamber (2).

[0030] The receiving chamber (2) has an interior that is a common housing and has a stage (10) as a mounting base. As described later, the stage (10) supports a wafer (W) in a manner in which the back surface of the imaging device (D) and the stage (10) face each other.

[0031] Additionally, the stage (10) is configured to be movable in the horizontal and vertical directions, and by adjusting the relative position between the probe card (11) described later and the wafer (W), the electrode (E) on the surface of the wafer (W) can be brought into contact with the probe of the probe card described later.

[0032] Additionally, a probe card (11) is positioned above the stage (10) in the receiving chamber (2) so as to face the stage (10). The probe card (11) has a plurality of needle-shaped probes (11a) serving as contact terminals. Each probe (11a) is formed to be able to contact a corresponding electrode (E) on the surface of the wafer (W).

[0033] The probe card (11) is connected to the tester (4) via the interface (12). When testing the imaging device (D), each probe (11a) contacts the corresponding electrode (E) and supplies power input from the tester (4) via the interface (12) to the imaging device (D), or transmits a signal from the imaging device (D) to the tester (4) via the interface (12).

[0034] The loader (3) takes out a wafer (W) contained in a return container FOUP (not shown) and returns it to the stage (10) of the receiving room (2). Additionally, the loader (3) receives the wafer (W) from the stage (10) after the inspection of the electrical characteristics of the imaging device (D) is completed and places it in the FOUP.

[0035] The loader (3) has a control unit (13) that performs various controls. The control unit (13) is configured by a computer equipped with a processor such as a CPU or memory, for example, and has a program storage unit. A program that controls the operation of each component of the prober (1) during electrical characteristic testing is stored in the program storage unit. In addition, the program may be recorded on a computer-readable storage medium and may be installed in the control unit (13) from said storage medium. The said storage medium may be a temporary storage medium or a non-temporary storage medium.

[0036] Additionally, the control unit (13) is connected to the stage (10) via wiring (14) and connected to the tester computer (16) via wiring (15). Based on an input signal from the tester computer (16), the control unit (13) controls the irradiation operation by the light irradiation mechanism of the stage (10) described later. Additionally, the control unit (13) controls the heater (51) of the stage (10) described later. Additionally, the control unit (13) may be provided in the receiving room (2).

[0037] The tester (4) has a test board (not shown) that reproduces a part of the circuit configuration of a main board on which an imaging device (D) is mounted. The test board is connected to a tester computer (16). The tester computer (16) determines the quality of the imaging device (D) based on a signal from the imaging device (D). The tester (4) can reproduce the circuit configurations of multiple types of main boards by replacing the test board.

[0038] Additionally, the probe (1) is provided with a user interface section (17). The user interface section (17) is intended to display information for a user or for the user to input instructions, and is composed of, for example, a display panel having a touch panel or a keyboard.

[0039] In the probe (1) having each of the above-described parts, when testing the electrical characteristics of the imaging device (D), the tester computer (16) transmits data to the test board connected via the imaging device (D) and each probe (11a). Then, the tester computer (16) determines whether the transmitted data has been correctly processed by the test board based on the electrical signal from the test board.

[0040] [Stage (10)]

[0041] Next, the configuration of the stage (10) will be described. FIG. 5 is a cross-sectional view schematically illustrating the configuration of the stage (10). FIG. 6 is a top view of the top plate (30) described later. FIG. 7 is a diagram illustrating the configuration of the temperature measurement circuit of the sensor pattern described later.

[0042] The stage (10) supports a wafer (W) in a manner such that the back surface of the imaging device (D) and the stage (10) face each other, and as shown in FIG. 5, it has a top plate (30), an irradiation unit (40), and a stand (50).

[0043] The top plate (30) is a flat-shaped member made of a light-transmitting material, and its upper surface (30a) serves as a mounting surface on which a wafer (W) is mounted. The top plate (30) transmits, for example, planar light emitted from an irradiation unit (40) toward the direction of the wafer (W) while diffusing it. That is, the top plate (30) is formed to function, for example, as a diffuser plate. Additionally, the top plate (30) is formed in a square shape, for example, with a side length greater than the diameter of the wafer (W) when viewed from a flat surface.

[0044] A more detailed configuration of the top plate (30) will be described later.

[0045] In addition, the "light-transmitting material" described above is a material that transmits light of a wavelength within the inspection range (i.e., light from the irradiation unit (40)), and is, for example, glass.

[0046] The irradiation unit (40) is positioned opposite the wafer (W) on the mounting surface (30a) and the top plate (30), that is, below the top plate (30), and irradiates light toward the wafer (W) mounted on the mounting surface (30a).

[0047] The irradiation unit (40) has, for example, a light guide plate (41) and a light source unit (42).

[0048] The light guide plate (41) has an opposing surface (41a) that faces the wafer (W) on the mounting surface (30a) and the top plate (30) between them, and is formed in a flat shape, for example. The shape and dimensions of the light guide plate (41) when viewed from a flat plane are, for example, identical to those of the top plate (30). In addition, the light guide plate (41) has a diffusion dot (41b). The diffusion dot (41b) is formed on the surface opposite to the opposing surface (41a) of the light guide plate (41), that is, on the bottom surface. As described later, this light guide plate (41) emits planar light toward the wafer (W), and is arranged so that the area forming the imaging device of the wafer (W) is included within the area emitting planar light when viewed from a flat plane.

[0049] Additionally, on the lower surface of the light guide plate (41), a reflector (not shown) that reflects light from the light source unit (42) may be provided so as to be in contact with the lower surface.

[0050] The light source unit (42) is provided in a lateral outer region of the light guide plate (41) and emits light toward the side surface of the light guide plate (41). The light source unit (42) has, for example, a plurality of LEDs (not shown) provided along each side of the light guide plate (41).

[0051] In addition, in this embodiment, a heat sink (43) is provided on the back surface of a substrate (not shown) supporting an LED in order to dissipate heat from the LED of the light source unit (42) to the outside of the stage (10). The heat sink (43) is formed, for example, from a metal material. A path may be formed in the heat sink (43) through which a coolant, such as water, flows to cool the LED of the light source unit (42).

[0052] In the prober (1), light emitted from the LED of the light source unit (42) and incident from the side surface of the light guide plate (41) is diffused by being reflected by the diffusion dot (41b), and is emitted as a planar light from the opposite surface (41a) facing the wafer (W), passes through the top plate (30), and is incident on the imaging device (D) of the wafer (W).

[0053] In addition, the LED of the light source unit (42) emits light containing light of a wavelength of the inspection range. The light of the wavelength of the inspection range is, for example, light of a wavelength in the visible light region, and depending on the type of imaging device (D), it may be light outside the visible light region, such as infrared light.

[0054] The support (50) is positioned opposite the wafer (W) on the mounting surface (30a), the top plate (30), and the light guide plate (41), that is, below the light guide plate (41), and supports the top plate (30) and the irradiation unit (40). For example, the top plate (30) is supported by the irradiation unit (40) by adhesion using a transparent adhesive material, and the irradiation unit (40) is supported by adhesion using an adhesive material.

[0055] Additionally, the device (50) is a temperature control unit that adjusts the temperature of the imaging device (D) of the wafer (W) mounted on the mounting surface (30a), and has a heater (51) built in. Specifically, the heater (51) adjusts the temperature of the imaging device (D) by heating the wafer (W) mounted on the mounting surface (30a). For example, a resistance heating type heater can be used for the heater (51). The heater (51) is controlled by the control unit (13).

[0056] In addition, the amount of heating by the heater (51) may be the same within the upper surface of the device (50), and the upper surface of the device (50) may be divided into multiple heating zones, and a heater (51) may be individually provided for each heating zone, and the amount of heating by the heater (51) for each heating zone may be adjustable.

[0057] In addition, in this embodiment, a temperature control unit is provided to heat the wafer (W) called a heater (51), but instead of this, or in addition to this, a cooling unit for the wafer (W) (for example, a cooling refrigerant flow path) may be provided.

[0058] Additionally, on the stage (10), a sensor pattern (SP), which is a pattern of thickness made of a metal material and transmits light, is formed on the mounting surface (30a) of the top plate (30). Specifically, as shown in FIG. 6, the top plate (30) is divided into a plurality of regions when viewed from the top surface, and in the example of the drawing, the mounting surface (30a) of the top plate (30) is divided into 16 regions (Z1 to Z16), and a sensor pattern (SP1 to SP16) is formed in each of the regions (Z1 to Z16).

[0059] The sensor pattern (SP) may be formed on the opposite side, that is, on the lower surface of the top plate (30), instead of or in addition to the mounting surface (30a) formed on the top plate (30).

[0060] The metal material used for the sensor pattern (SP) comprises, for example, at least one of silver, copper, or tungsten, and the temperature coefficient α of the electrical resistance is 3.9 x 10⁻⁶ in the range of 0°C to 100°C. -3 [1 / ℃] is desirable. In addition, as described below, a measurement regarding the electrical resistance of the sensor pattern (SP) is performed, but if the electrical resistance of the sensor pattern (SP) is about 100Ω at room temperature, there is no problem with the precision of the above measurement.

[0061] In addition, the "light-transmitting thickness," which is the thickness of the sensor pattern (SP), is, for example, 1 / 10 or less of the wavelength of the light used for inspection. Also, if the inspection wavelength is determined, the "light-transmitting thickness" transmits light when it is 1 / 2 of the wavelength of the light used for inspection.

[0062] As shown in FIG. 7, the sensor pattern (SP) is connected to a voltmeter (101) which serves as a measuring unit for measuring the electrical resistance of the sensor pattern (SP). Specifically, the sensor patterns (SP1 to SP16) are connected to the voltmeter (101) via, for example, a switching element (102).

[0063] The switching element (102) switches the sensor pattern (SP) that is electrically connected to the voltmeter (101).

[0064] The voltmeter (101) measures the voltage according to the sensor pattern (SP). Specifically, the voltmeter (101) measures the voltage according to the sensor pattern (SP) for each sensor pattern (SP). More specifically, the voltmeter (101) measures the voltage according to the sensor pattern (SP) that is electrically connected to the voltmeter (101) by the switching element (102).

[0065] Additionally, the sensor pattern (SP) is connected to the current source (111). Specifically, the sensor patterns (SP1 to SP16) are connected to the current source (111) via a switching element (112). The switching element (112) switches the sensor pattern (SP) that is electrically connected to the current source (111). The current source (111) supplies a direct current of a predetermined magnitude to the sensor pattern (SP) that is electrically connected to the current source (111) by the switching element (102).

[0066] The voltmeter (101), current source (111), and switching elements (102, 112) are controlled by the control unit (13). Additionally, the measurement result by the voltmeter (101) is output to the control unit (13).

[0067] In the control unit (13), the temperature of the sensor pattern (SP) is calculated as the temperature of the imaging device (D) based on the measurement result of the sensor pattern (SP) by the voltmeter (101). Specifically, the control unit (13) calculates the temperature of the sensor pattern (SP) as the temperature of the imaging device (D) based on the measurement result of the voltmeter (101) for the sensor pattern (SP) in the area corresponding to the imaging device (D) among the plurality of areas (Z1 to Z16) of the mounting surface (30a).

[0068] A method for calculating the temperature of a sensor pattern (SP) from the measurement result of the sensor pattern (SP) by the voltmeter (101) (specifically, the measurement of the voltage according to the sensor pattern (SP)) is as follows. That is, first, the electrical resistance of the sensor pattern (SP) is calculated from the measurement result of the voltage according to the sensor pattern (SP) and the current (current value) supplied from the current source (111). Then, the temperature of the sensor pattern (SP) is calculated from the calculated electrical resistance of the sensor pattern (SP) using a previously obtained relationship between electrical resistance and temperature.

[0069] The information required to calculate this temperature is stored in advance in a memory unit (not shown).

[0070] In addition, the above-described relationship is stored in advance for each sensor pattern (SP), and when calculating the temperature of the sensor pattern (SP), the above-described relationship for the corresponding sensor pattern (SP) is used.

[0071] As described above, the sensor pattern (SP) is connected to a voltmeter (101) or a current source (111). The connection between the sensor pattern (SP) and the voltmeter (101), etc., is carried out through an electrode pattern (DP) that is positioned outside the sensor pattern (SP) when viewed from a planar perspective, as shown in FIG. 6, for example.

[0072] While the sensor pattern (SP) is formed in an area that overlaps with the wafer (W) when viewed from a plane (specifically, an area that overlaps with the part of the wafer (W) where the imaging device is formed), the electrode pattern (DP) is provided in an area outside of it.

[0073] In addition, while the sensor pattern (SP) is formed with a narrow width, the electrode pattern (DP) is formed with a wide width. Specifically, while the sensor pattern (SP) has a narrow, wavy pattern, the electrode pattern (DP) has a film-like pattern spread over the entire surface.

[0074] The thickness and material of the electrode pattern (DP) may be the same as, for example, the sensor pattern (SP), but may also be different. However, by making them the same, the electrode pattern (DP) and the sensor pattern (SP) can be formed simultaneously by sputtering, etc.

[0075] If the electrode pattern (DP) allows for independent measurement of the electrical resistance of each sensor pattern (SP), it may be partially shared among the sensor patterns (SP).

[0076] [Inspection Processing]

[0077] Next, an example of an inspection process for a wafer (W) using a probe (1) will be described. In the following description, one imaging device (D) is inspected in a single inspection. However, multiple imaging devices (D) may be inspected collectively in a single inspection using the probe (1). Additionally, the following inspection process is executed under the control of a control unit (13).

[0078] For example, first, a wafer (W) is removed from the FOUP of the loader (3) and returned to the receiving chamber (2). Then, the wafer (W) is mounted on the mounting surface (30a) on the top plate (30) of the stage (10) on which the sensor pattern (SP) is formed, so that the back surface of the imaging device (D) formed on the wafer (W) faces the stage (10) and the wafer (W) comes into contact with the stage (10).

[0079] Next, the stage (10) is moved, and the probe (11a) provided on the upper side of the stage (10) comes into contact with the electrode (E) of the imaging device (D) of the inspection target.

[0080] Then, irradiation of light from the irradiation unit (40) is performed. Specifically, all LEDs of the light source unit (42) are turned on. As a result, light is incident on the side surface of the light guide plate (41) from each LED. The light incident on the light guide plate (41) is reflected and diffused toward the top plate (30) by the diffusion dot (41b), and is emitted in a planar shape from the opposite surface (41a) facing the wafer (W) on the light guide plate (41).

[0081] Light emitted from the light guide plate (41) diffuses through the top plate (30), passes through the top plate (30), and is incident on the wafer (W).

[0082] Along with the irradiation of this light, an input of a signal for inspection to the probe (11a) is performed. By doing so, an inspection of the imaging device (D) is performed.

[0083] During the above inspection, the voltage according to the sensor pattern (SP) is measured by the voltmeter (101), and the temperature of the sensor pattern (SP) is calculated by the control unit (13) as the temperature of the imaging device (D) based on the measurement result by the voltmeter (101). Specifically, the control unit (13) identifies the area closest to the center position of the imaging device (D) to be inspected from a plurality of areas (Z1 to Z16) of the mounting surface (30a), and the voltage according to the sensor pattern (SP) formed in the area is measured by the voltmeter (101). In addition, the control unit (13) calculates the temperature of the sensor pattern (SP) formed in the area closest to the center position of the imaging device (D) to be inspected as the temperature of the imaging device (D) based on the measurement result by the voltmeter (101).

[0084] And, during the above inspection, the heater (51) is controlled by the control unit (13) based on the temperature calculation result. Specifically, for example, during the above inspection, the heater (51) is controlled by the control unit (13) based on the temperature calculation result so that the temperature of the sensor pattern (SP), that is, the temperature of the imaging device (D) of the inspection target, is kept constant at the target temperature (T).

[0085] Afterwards, the same processing as described above is repeated until the inspection of all imaging devices (D) is completed.

[0086] [Main Effects of the Present Embodiment]

[0087] As described above, in this embodiment, the stage (10) has a top plate (30) having a mounting surface (30a) on which a wafer (W) is mounted, an irradiation unit (40) positioned opposite the wafer (W) with the top plate (30) in between and irradiating light toward the wafer (W) mounted on the mounting surface (30a), and a heater (51) for adjusting the temperature of the imaging device (D) of the wafer (W) mounted on the mounting surface (30a). In addition, the top plate (30) has a sensor pattern (SP) made of a metal material and having a thickness that transmits light formed on at least one of the mounting surface (30a) of the top plate (30) or the opposite side. Therefore, when a measurement regarding the electrical resistance of the sensor pattern (SP) is performed, the temperature of the sensor pattern (SP) can be calculated as the temperature of the imaging device (D) based on the measurement result. A sensor pattern (SP) is formed on the top plate (30), and since the sensor pattern (SP) and the wafer (W) are close to each other, the temperature of the sensor pattern (SP) and the temperature of the wafer (W), i.e., the temperature of the imaging device (D), are approximately the same. In other words, according to the present embodiment, the temperature of the imaging device (D) can be accurately detected. In addition, since the sensor pattern (SP) is formed with a thickness that transmits light, the inspection light directed toward the wafer (W) through the top plate (30) is not blocked by the sensor pattern (SP). Thus, according to the present embodiment, there is no adverse effect on the light irradiated onto the imaging device (D), and the temperature of the imaging device (D) can be accurately detected.

[0088] In addition, when the sensor pattern (SP) is formed on the mounting surface (30a) of the top plate (30), the wafer (W) is mounted on the sensor pattern (SP), and since the sensor pattern (SP) and the wafer (W) are closer together, the temperature of the imaging device (D) can be measured more accurately based on the measurement result regarding the electrical resistance of the sensor pattern (SP). In addition, when the sensor pattern (SP) is formed on the mounting surface (30a) of the top plate (30), the above-described effect can be enjoyed without relying on the material of the top plate (30) (specifically, the material of the base material of the top plate (30)). That is, without relying on the material of the top plate (30), there is no adverse effect on the light irradiated to the imaging device (D), so the temperature of the imaging device (D) can be detected more accurately.

[0089] In addition, as described above, since the temperature of the imaging device can be accurately detected, the temperature of the imaging device can be kept constant at a desired temperature by controlling the heater (51) based on the detection result.

[0090] In addition, in this embodiment, the sensor pattern (SP) is connected to a voltmeter (101), etc. via an electrode pattern (DP). The electrode pattern (DP) is formed in an area outside the region that overlaps with the imaging device (D) when viewed from a planar perspective, and is also formed with a wider width than the sensor pattern (SP), so the work for connecting the sensor pattern (SP) and the voltmeter (101), etc. (for example, the work of connecting the terminal of the wiring and the electrode pattern (DP)) can be easily performed. In addition, since the electrode pattern (DP) is formed with a wider width than the sensor pattern (SP), the electrical resistance of the electrode pattern (DP) can be suppressed from affecting the measurement result regarding the electrical resistance of the sensor pattern (SP) by the voltmeter (101). Therefore, the temperature of the imaging device (D) can be detected more accurately.

[0091] <Another example of a sensor pattern (SP) connection type>

[0092] FIG. 8 is a drawing illustrating another example of the connection form between the sensor pattern (SP) and the current source (111).

[0093] In the above example, all sensor patterns (SP1 to SP16) were connected to a common voltmeter (101). Alternatively, the sensor patterns (SP1 to SP16) may be divided into multiple groups, and a voltmeter (101) may be provided for each group. In this case, a different current source (111) may be provided for each group, and the current source (111) may be common to all groups.

[0094] Additionally, as shown in FIG. 8, sensor patterns (SP1 to SP16) may be connected in series with a current source (111). In this case, a voltmeter (101) is provided, for example, for each sensor pattern (SP).

[0095] Additionally, sensor patterns (SP1 to SP16) may be divided into multiple groups, and sensor patterns (SP) belonging to the same group may be connected in series to a current source (111). In this case, a different current source (111) may be provided for each group, or a current source (111) may be common to all groups and multiple groups may be connected in parallel to said current source.

[0096] (Second embodiment)

[0097] [Stage (10A)]

[0098] FIG. 9 is a cross-sectional view schematically illustrating the configuration of a stage (10A) of a probe as an inspection device according to a second embodiment. FIG. 10 is a diagram illustrating the configuration of a circuit regarding a sensor pattern (SP).

[0099] In the first embodiment, a heater (51) was provided within the base (50). In contrast, in the present embodiment, as shown in FIG. 9, a heater is not provided in the base (50A), and instead, a sensor pattern (SP) is configured to serve as the heater.

[0100] In addition, in the present embodiment, the sensor pattern (SP) is connected to a voltage regulator (201) that adjusts the voltage according to the sensor pattern (SP), as shown in FIG. 10. Specifically, for example, the sensor patterns (SP1 to SP16) are connected in series to the voltage regulator (201).

[0101] In addition, in this embodiment, an ammeter (202) is provided to measure the current flowing through the sensor patterns (SP1 to SP16).

[0102] The voltage regulator (201) and the ammeter (202) are controlled by the control unit (13). Additionally, the measurement result by the ammeter (202) is output to the control unit (13).

[0103] In this embodiment as in the first embodiment, the voltage according to the sensor pattern (SP) is measured by the voltmeter (101). Also, in this embodiment, the current flowing through the sensor pattern (SP) is measured by the ammeter (202). Furthermore, in this embodiment, the electrical resistance of the sensor pattern (SP) is calculated by the control unit (13) from the measurement result by the voltmeter (101) and the measurement result by the ammeter (202). Then, the temperature of the sensor pattern (SP) is calculated using the previously obtained relationship between electrical resistance and temperature from the calculated electrical resistance of the sensor pattern (SP).

[0104] In addition, in this embodiment, the voltage regulator (201) is controlled based on the temperature of the sensor pattern (SP) calculated by the control unit (13), and the voltage according to the sensor pattern (SP), which also serves as a heater, is adjusted. By doing so, the temperature of the sensor pattern (SP), that is, the temperature of the imaging device (D) of the inspection target, can be kept constant at the target temperature (T).

[0105] In addition, even when the sensor pattern (SP) serves as a heater as in the present embodiment, the heater (51) of FIG. 5 may be provided.

[0106] (A variation of the investigation section)

[0107] Figure 11 is a drawing illustrating another example of an investigation unit.

[0108] The irradiation unit (40A) of Fig. 11 is positioned opposite the wafer (W) with the top plate (30) in between, and also has a light source unit (300) that emits light toward the top plate (30), that is, toward the wafer (W).

[0109] This light source unit (300) has multiple LEDs (Light Emitting Diodes) (301) as light sources, and also has a substrate (302) and a heat sink (303).

[0110] Each LED (301) is oriented toward the wafer (W) and emits light of a wavelength within the inspection range.

[0111] Additionally, when viewed from a planar perspective, the area where the LED (301) is provided (hereinafter referred to as the "LED forming area") is an area that overlaps with the wafer (W) mounted on the stage (10), and the size of the LED forming area is approximately the same as that of the wafer (W). The LEDs (301) are provided at equal intervals within the LED forming area.

[0112] The light emission intensity of the LED (301) is adjusted, for example, for each LED (301). Additionally, the LED forming area may be divided into multiple areas, and the light emission intensity of the LED (301) may be adjusted for each area.

[0113] The substrate (302) holds the LED (301) and also has a wiring pattern (not shown) formed thereon for controlling the LED (301).

[0114] The heat sink (303) dissipates heat from the LED (301) to the outside of the stage (10B) and is formed of, for example, a metal material. A path may be formed in the heat sink (303) through which a coolant, such as water, flows to cool the LED (301).

[0115] In this example, the top plate (30) does not need to function as a diffuser.

[0116] By using the irradiation unit (40A) of the present example, compared to the irradiation unit (40) of the above example, inspection light of an intensity closer to a desired value can be irradiated to the imaging device (D) to be inspected. In addition, in the stage (10) of FIG. 5, it is also possible to consider using the irradiation unit (40A) of FIG. 11 instead of the irradiation unit (40), but the LED (301) of the irradiation unit (40A) is affected by heat from the heater (51), making it difficult to make the intensity of the light irradiated to the wafer (W) a desired value. In the example of FIG. 11, since the sensor pattern (SP) functions as a heater, the LED (301) of the irradiation unit (40A) is less affected by the sensor pattern (SP) acting as a heater.

[0117] (Third embodiment)

[0118] [Stage (10C)]

[0119] FIG. 12 is a cross-sectional view schematically illustrating the configuration of a stage (10C) of a probe as an inspection device according to a third embodiment.

[0120] The stage (10C) of FIG. 12 has, in addition to the investigation section (40) and the stand (50), a top plate (30A), a base member (400), and a frame (410).

[0121] The top plate (30A) has a sensor pattern (SP) formed on it, similar to the top plate (30) shown in FIG. 5, etc. Specifically, the top plate (30A) has a sensor pattern (SP) formed on the lower surface, which is the surface opposite to the mounting surface (30a).

[0122] However, the top plate (30A) is composed of porous glass having an average hole diameter of 30 nm or less and light transmittance, unlike the top plate (30) illustrated in FIG. 5, etc. The porous glass used in the top plate (30A) is, specifically, a porous glass obtained as follows. That is, first, raw glass (e.g., Na2O-B2O3-SiO2 glass) is melted, and then, by pulverizing it through heat treatment, etc., a mesh formed by another phase (Na2O-B2O3 glass) is formed within a flat plate made of one phase (SiO2 glass). Then, by removing only the mesh through acid treatment, etc., a porous glass is obtained in which each of the multiple holes penetrates the flat plate made of the one phase (SiO2 glass) non-linearly in the thickness direction. This porous glass is used in the top plate (30A).

[0123] Since the top plate (30A) is composed of porous glass as described above, when the wafer (W) is mounted on the top plate (30A), holes are formed that penetrate the top plate (30A) non-linearly in the thickness direction not only in the area that does not overlap with the imaging device (D) when viewed from a flat surface, but also in the overlapping area. That is, holes that penetrate the top plate (30A) non-linearly in the thickness direction are formed on the front surface of the top plate (30A).

[0124] The base member (400) is made of a light-transmitting material and is positioned between the top plate (30A) and the irradiation unit (40), and is a member that forms a space (S) that is exhausted between the top plate (30A) and the base member (400). The light-transmitting material used for the base member (400) is, specifically, glass having a thermal expansion coefficient approximately equivalent to that of a wafer (W).

[0125] For example, the base member (400) has a concave recess (401) in the center on the side opposite to the top plate (30A), and a space (S) is formed by closing the opening of the recess (401) with the top plate (30A). The space (S) is exhausted by an exhaust mechanism (500).

[0126] The exhaust mechanism (500) is controlled by a control unit (13) and has an exhaust pipe (501) in addition to a vacuum exhaust pump (502). One end of the exhaust pipe (501) is connected to a space (S) through a connection hole (402), and the other end is connected to the vacuum exhaust pump (502). A buffer tank (503) is installed in the exhaust pipe (501). The exhaust pipe (501) must be designed so that the conductance is lowered in multiple ways so that the buffer tank (503) becomes substantially the same space.

[0127] Additionally, within the recess (401), a support member (403) is provided that extends from the bottom of the recess (401) toward the top plate (30A) and supports the top plate (30A). For example, the support member (403) may have a plurality of support columns (403a) that extend toward the top plate (30A) and are formed in a column shape. Alternatively, the support member (403) may have a support wall formed in a spiral shape when viewed from a planar perspective instead of the support columns (403a). Furthermore, the support member (403) may have both the support columns (403a) and the aforementioned spiral-shaped support wall.

[0128] In order to make the space (S) airtight, for example, an O-ring (404) is provided between the top plate (30A) and the base member (400). Specifically, the O-ring (404) is provided between the periphery of the top plate (30A) and the periphery of the base member (400). Additionally, the top plate (30A) and the base member (400) may be joined together with an adhesive.

[0129] The frame (410) supports the investigation part (40) that supports the base member (400) by, for example, bonding with an adhesive. Additionally, the frame (410) is supported on the support (50) by, for example, bonding with an adhesive.

[0130] [Inspection Processing]

[0131] In the inspection process for a wafer (W) using a prober having a stage (10C), when the wafer (W) is mounted on the mounting surface (10a) of the top plate (30A) of the stage (10C), the space (S) between the top plate (30C) and the base member (400) is exhausted by the exhaust mechanism (500). Since the top plate (30A) is composed of porous glass, by exhausting the space (S) as described above, the space between the back surface of the wafer (W) and the top plate (30A) is exhausted through the holes of the porous glass of the top plate (30A), and the wafer (W) is adsorbed and held on the top plate (30A).

[0132] In this embodiment, the top plate (30A) is made of porous glass, and a hole for adsorbing a wafer (W) is formed on the front surface of the top plate (30A), including an area that overlaps with the imaging device (D) when viewed from a planar view. Because of this, even if the exhaust flow rate from the space (S) between the top plate (30A) and the base member (400) is low, the wafer (W) can be adsorbed to the top plate (30A) with a high vacuum adsorption force compared to the case where the hole for adsorbing the wafer (W) is formed only in an area that does not overlap with the imaging device (D) when viewed from a planar view. That is, according to this embodiment, the wafer (W) can be adsorbed appropriately.

[0133] In addition, since the exhaust mechanism (500) has a buffer tank (503), the exhaust flow passing through the connection hole (402) can be dropped, thereby suppressing the increase in the adsorption force of the wafer (W) only in the vicinity of the connection hole (402).

[0134] In addition, during the inspection process, irradiation of light from the irradiation unit (40) is performed. Specifically, all LEDs of the light source unit (42) are turned on, and light is emitted in a planar shape from the surface of the light guide plate (41) facing the wafer (W). The light emitted from the light guide plate (41) passes through the base member (400) and the top plate (30A) and is incident on the wafer (W).

[0135] Unlike the present embodiment, if the diameter of the hole penetrating the top plate (30A) non-linearly is equal to the wavelength of the light irradiated from the irradiation unit (40), the light is refracted or reflected by the hole, and as a result, there are parts where the light incident on the wafer (W) through the top plate (30A) becomes strong and parts where it becomes weak. In this case, the light irradiated from the irradiation unit (40) may not be incident on a desired part of the wafer (W) (specifically, a part corresponding to the imaging device (D) of the inspection target) with a desired intensity. In contrast, in the present embodiment, the diameter of the hole penetrating the top plate (30A) non-linearly (average hole diameter) is 30 nm or less and is sufficiently small relative to the wavelength of the light irradiated from the irradiation unit (40), so the hole is substantially the same as not existing. Therefore, in the present embodiment, light is not refracted or reflected by the hole. Accordingly, according to the present embodiment, if there is no in-plane deviation of the light incident on the top plate (30A), then there is no in-plane deviation of the light incident on the wafer (W) through the top plate (30A). Therefore, in the present embodiment, light irradiated from the irradiation unit (40) can be incident on a desired portion of the wafer (W) (specifically, a portion corresponding to the imaging device (D) to be inspected) with a desired intensity.

[0136] (Another example of porous glass constituting the top plate (30A))

[0137] In the above example, the porous glass constituting the top plate (30) had an average hole diameter of 30 nm or less and was light-transmitting, but it may also have an average hole diameter of 10 μm or more and be light-transmitting. A porous glass having an average hole diameter of 10 μm or more and being light-transmitting can be obtained in the same way as a porous glass having an average hole diameter of 30 nm or less and being light-transmitting.

[0138] Even when using porous glass having an average hole diameter of 10 μm or more and light transmittance, holes are formed that penetrate the top plate (30A) non-linearly in the thickness direction in the areas that do not overlap with the imaging device (D) and areas that overlap when viewed from a planar perspective in the state where the wafer (W) is mounted on the top plate (30A). That is, holes are formed on the front surface of the top plate (30A) that penetrate the top plate (30A) non-linearly in the thickness direction. Therefore, in the case of the present example, even if the exhaust flow rate from the space (S) between the top plate (30A) and the base member (400) is low, the wafer (W) can be adsorbed to the top plate (30) with a high vacuum adsorption force.

[0139] In addition, in this example, the diameter of the hole (average hole diameter) that penetrates the top plate (30A) non-linearly is 10 μm or more and is sufficiently larger than the wavelength of the light irradiated from the irradiation unit (40) and incident on the top plate (30A). Furthermore, the hole has a multi-type shape. Because of this, even if the light incident on the top plate (30A) is refracted or reflected by the hole, there are no regularly strong and weak parts in the light incident on the wafer (W) through the top plate (30A). In this example, the light incident on the top plate (30A) is diffused by the top plate (30A) and incident on the wafer (W). Therefore, in this example, if the light incident on the top plate (30A) has no deviation within the plane, the light incident on the wafer (W) through the top plate (30A) also has no deviation within the plane, and rather, the light incident on the wafer (W) through the top plate (30A) becomes more uniform within the plane than the light incident on the top plate (30A). Accordingly, in this example as well, the light irradiated from the irradiation unit (40) can be incident on a desired part of the wafer (W) (specifically, a part corresponding to the imaging device (D) of the inspection target) with a desired intensity.

[0140] (Another example of the top plate (30A))

[0141] In the example of FIG. 12, a sensor pattern (SP) was formed on the lower surface of a top plate (30A) made of porous glass. Alternatively, or additionally, the sensor pattern (SP) may be formed on the upper surface, i.e., the mounting surface (30a), of the top plate (30A).

[0142] Additionally, the mounting surface (30a) of the top plate (30A) may be coated with silicone. Specifically, the mounting surface (30a) of the top plate (30A) may be coated with silicone in such a way that the holes of the porous glass constituting the top plate (30A) are not blocked.

[0143] The method of manufacturing a top plate (30A) coated with silicone in a form where the above holes are not blocked is, for example, as follows. That is, after coating the entire surface of the porous glass with silicone, before the silicone solidifies, gas is blown toward the back side, and the portion of the silicone covering the entire surface of the porous glass that overlaps with the holes of the top plate (30A) is blown away. By doing so, a top plate (30A) coated with silicone in a form where the holes are not blocked can be manufactured.

[0144] In this example, when the wafer (W) is adsorbed and held to the top plate (30A) through the holes of the porous glass constituting the top plate (30A), even if the back surface of the wafer (W) (specifically, the (on-chip) lens (L)) comes into contact with the top plate (30A), the contact is made of a silicon coating layer. Therefore, damage to the back surface of the wafer (W) (specifically, the (on-chip) lens (L)) due to contact with the top plate (30A) can be suppressed.

[0145] Additionally, on the mounting surface (30a) of the top plate (30A), both a silicon coating layer and a sensor pattern (SP) may be formed.

[0146] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or modified in various forms without departing from the appended claims and their common knowledge. For example, the constituent elements of the above embodiments may be combined at will. From any such combination, the operation and effect of each constituent element according to the combination are naturally obtained, while other operations and other effects are evident to those skilled in the art from the description in this specification.

[0147] Furthermore, the effects described in this specification are merely illustrative or exemplary and are not limiting. That is, the technology according to this disclosure may exhibit other effects that are obvious to those skilled in the art from the description in this specification, in addition to or instead of the above effects.

[0148] In addition, the following configurations also fall within the technical scope of the present disclosure.

[0149] [Supplementary Port 1]

[0150] In a testing device for testing a device to be tested,

[0151] The above-mentioned inspection target device is a back-illuminated imaging device in which light is incident from the back side, which is the side opposite to the side where the wiring layer is provided, and is formed on the inspection target body.

[0152] The inspection device comprises a mounting base that supports the inspection target in a manner facing the rear surface of the imaging device, and

[0153] The above mounting stand is,

[0154] A top plate made of a light-transmitting material and having a mounting surface on which the inspection target is mounted, and

[0155] An irradiation unit positioned opposite the inspection target with the above-mentioned top plate in between, and irradiating light toward the inspection target mounted on the mounting surface, and

[0156] It has a temperature control unit for adjusting the temperature of the inspection target device of the inspection target mounted on the above-mentioned mounting surface, and

[0157] The above top plate has a pattern formed on at least one of the mounting surface or the opposite surface, which is made of a metal material and has a thickness that transmits light.

[0158] Inspection device.

[0159] [Sub-port 2]

[0160] A measuring unit that performs a measurement regarding the electrical resistance of the above pattern, and

[0161] Further equipped with a control unit,

[0162] The inspection device described in Subparagraph 1, wherein the control unit calculates the temperature of the pattern as the temperature of the device to be inspected based on the measurement result of the measurement unit.

[0163] [Sub-section 3]

[0164] The inspection device described in subparagraph 2, wherein the control unit controls the temperature control unit based on the calculation result of the temperature of the pattern.

[0165] [Sub-section 4]

[0166] The above top plate is divided into multiple regions, and

[0167] The above pattern is an inspection device described in subparagraph 1, formed in each of the plurality of regions.

[0168] [Sub-section 5]

[0169] A measuring unit that performs a measurement regarding the electrical resistance of each pattern for each of the above patterns, and

[0170] Further equipped with a control unit,

[0171] The inspection device described in subparagraph 4, wherein the control unit calculates the temperature of the pattern as the temperature of the inspection target device based on the measurement result by the measurement unit for the pattern in the area corresponding to the inspection target device among the plurality of areas.

[0172] [Sub-section 6]

[0173] The inspection device described in subparagraph 5, wherein the control unit controls the temperature control unit based on the result of calculating the temperature of the pattern.

[0174] [Sub-section 7]

[0175] The above pattern is formed in an area that overlaps with the device to be inspected when viewed from a planar perspective, and is connected to the measuring unit through a separate pattern formed in an area outside of said area.

[0176] An inspection device described in any one of sub-paragraphs 2, 3, 5, and 6, wherein the above separate pattern is formed wider than the above pattern.

[0177] [Sub-section 8]

[0178] The above temperature control unit has a heater that heats the inspection target device of the inspection target mounted on the mounting surface, and

[0179] The above pattern is described in any one of sub-paragraphs 1 to 7, which also serves as the heater.

[0180] Inspection device.

[0181] [Sub-section 9]

[0182] The above investigation department,

[0183] A light guide plate having an opposing surface facing the inspection target with the above-mentioned top plate in between, and

[0184] It has a light source portion that is provided in the lateral outer region of the light guide plate and emits light toward the side edge surface of the light guide plate.

[0185] The light guide plate described in any one of subparagraphs 1 to 8 is an inspection device that reflects light incident from the side surface of the light guide plate, which is emitted from the light source unit, toward the opposing surface, and emits light in the shape of a plane from the opposing surface.

[0186] [Sub-section 10]

[0187] The above temperature control unit is an inspection device described in subparagraph 9, positioned opposite the inspection target with the top plate and the light guide plate in between.

[0188] [Sub-section 11]

[0189] The inspection device described in subparagraph 8, wherein the above-mentioned investigation unit is positioned opposite the object to be inspected with the above-mentioned top plate in between and has a light source unit that emits light toward the above-mentioned top plate.

[0190] [Sub-section 12]

[0191] The above-mentioned mounting bracket is made of a light-transmitting material and further has a base member that is positioned between the top plate and the irradiation unit and forms a space for exhaust between the top plate and the base member.

[0192] An inspection device described in any one of subparagraphs 1 to 11, wherein the above-mentioned top plate is composed of porous glass with an average hole diameter of 30 nm or less or 10 μm or more.

[0193] [Sub-section 13]

[0194] In a mounting stand for an inspection device that inspects a device to be inspected,

[0195] The above-mentioned inspection target device is a back-illuminated imaging device in which light is incident from the back side, which is the side opposite to the side where the wiring layer is provided, and is formed on the inspection target body.

[0196] The vehicle in question is,

[0197] Supporting the object to be inspected in a manner facing the rear surface of the imaging device,

[0198] A top plate made of a light-transmitting material and having a mounting surface on which the inspection target is mounted, and

[0199] An irradiation unit positioned opposite the inspection target with the above-mentioned top plate in between, and irradiating light toward the inspection target mounted on the mounting surface, and

[0200] It has a temperature control unit for adjusting the temperature of the inspection target device of the inspection target mounted on the above-mentioned mounting surface, and

[0201] The above-mentioned top plate is a mounting base having a pattern of thickness formed on the mounting surface, which is made of a metal material and transmits light. Explanation of the symbols

[0202] 1: Prober 10, 10A, 10B: Stage 30: Top plate 30a: Mounting surface 40, 40A: Investigation Department 51: Heater 101: Voltmeter D: Back-illuminated imaging device SP(SP1 to SP16): Sensor pattern W: Wafer

Claims

Claim 1 In an inspection device for inspecting a device to be inspected, the device to be inspected is a back-illuminated imaging device in which light is incident from a back surface opposite to the side on which a wiring layer is provided, and is formed on a device to be inspected; the inspection device has a mounting base that supports the device to be inspected in a manner facing the back surface of the imaging device, and the mounting base has a top plate made of a light-transmitting material and having a mounting surface on which the device to be inspected is mounted, an irradiation unit disposed in a position facing the device to be inspected with the top plate in between and irradiating light toward the device to be inspected mounted on the mounting surface, and a temperature control unit that adjusts the temperature of the device to be inspected mounted on the mounting surface, and the top plate has a pattern formed on the mounting surface that is made of a metal material and transmits light. Claim 2 In claim 1, the inspection device further comprises a measuring unit that performs a measurement regarding the electrical resistance of the pattern and a control unit, wherein the control unit calculates the temperature of the pattern as the temperature of the device to be inspected based on the measurement result of the measuring unit. Claim 3 In claim 2, the control unit is an inspection device that controls the temperature control unit based on the result of calculating the temperature of the pattern. Claim 4 In claim 1, the inspection device wherein the top plate is divided into a plurality of regions, and the pattern is formed in each of the plurality of regions. Claim 5 In claim 4, the inspection device further comprises a measuring unit that performs a measurement regarding the electrical resistance of each pattern and a control unit, wherein the control unit calculates the temperature of the pattern as the temperature of the inspection target device based on the measurement result by the measuring unit for the pattern in the area corresponding to the inspection target device among the plurality of areas. Claim 6 In claim 5, the control unit is an inspection device that controls the temperature control unit based on the result of calculating the temperature of the pattern. Claim 7 An inspection device according to any one of claims 2, 3, 5, and 6, wherein the pattern is formed in an area that overlaps with the inspection target device when viewed from a plane, and is connected to the measuring unit through a separate pattern formed in an area outside the said area, and the separate pattern is formed wider than the said pattern. Claim 8 In any one of claims 1 to 6, the temperature control unit has a heater that heats the inspection target device of the inspection target mounted on the mounting surface, and the pattern is an inspection device that serves as the heater. Claim 9 An inspection device according to any one of claims 1 to 6, wherein the inspection unit comprises a light guide plate having a facing surface facing the object to be inspected with the top plate in between, and a light source unit provided in a lateral outer area of ​​the light guide plate and emitting light toward the side end surface of the light guide plate, and the light guide plate reflects light emitted from the light source unit and incident from the side end surface of the light guide plate toward the facing surface, and emits light in the shape of a plane from the facing surface. Claim 10 In claim 9, the temperature control unit is an inspection device positioned opposite the inspection target with the top plate and the light guide plate in between. Claim 11 In claim 8, the inspection device having a light source unit that emits light toward the top plate, positioned opposite the object to be inspected with the top plate in between. Claim 12 An inspection device according to any one of claims 1 to 6, wherein the mounting base is made of a light-transmitting material and further comprises a base member disposed between the top plate and the irradiation unit, forming a space for exhaust between the top plate and the base plate, and the top plate is composed of porous glass having an average hole diameter of 30 nm or less or 10 μm or more. Claim 13 A mounting stand for an inspection device for inspecting a device to be inspected, wherein the device to be inspected is a back-illuminated imaging device in which light is incident from a back surface opposite to the side on which a wiring layer is provided, and is formed on an object to be inspected; the mounting stand supports the object to be inspected in a manner facing the back surface of the imaging device and is made of a light-transmitting material and has a top plate having a mounting surface on which the object to be inspected is mounted; an irradiation unit disposed in a position facing the object to be inspected with the top plate in between and irradiates light toward the object to be inspected mounted on the mounting surface, and a temperature control unit for adjusting the temperature of the device to be inspected mounted on the mounting surface; wherein the top plate has a pattern formed on the mounting surface that is made of a metal material and transmits light.

Images