Radiation-emitting semiconductor body and method for manufacturing a radiation-emitting semiconductor body

Abstract

The present invention relates to a radiation-emitting semiconductor body (1), - First semiconductor region (2) of the first conductivity type, - Second semiconductor region (3) of the second conduction type and - Includes an active region (4) between the first semiconductor region (2) and the second semiconductor region (3), - The active region (4) has a larger band gap in the edge region (5) of the semiconductor body (1) than in the central region (6) of the semiconductor body (1), - The band gap of the second semiconductor region (3) is the same within the edge region (5) and within the central region (6). Furthermore, the present invention relates to a method for manufacturing a radiation-emitting semiconductor chip (14) and a radiation-emitting semiconductor body (1).

Description

Technology Field

[0001] The present invention relates to a radiation-emitting semiconductor body. Furthermore, the present invention relates to a radiation-emitting semiconductor chip and a method for manufacturing a radiation-emitting semiconductor body. The problem to be solved

[0002] The objective of the present invention is to provide a radiation-emitting semiconductor body having particularly high efficiency. Furthermore, a radiation-emitting semiconductor chip and a method for manufacturing such a radiation-emitting semiconductor body must be provided. means of solving the problem

[0003] The radiation-emitting semiconductor body is based, for example, on a III-V compound semiconductor material. Preferably, a phosphide-compound semiconductor material is considered as the compound semiconductor material.

[0004] A radiation-emitting semiconductor body is formed to emit electromagnetic radiation. The electromagnetic radiation emitted from the semiconductor body is, for example, visible light, particularly red light. In such cases, the peak wavelength of the emitted electromagnetic radiation lies within the red wavelength range. In other words, the peak wavelength of the electromagnetic radiation emitted from the radiation-emitting semiconductor body lies, for example, between 630 nm and 750 nm (including the boundary).

[0005] The semiconductor body has a main extension plane. The vertical direction extends perpendicularly to the main extension plane, and the lateral directions extend parallel to the main extension plane.

[0006] The radiation-emitting semiconductor body has extensions in lateral directions, for example, up to 500 µm, particularly up to 10 µm.

[0007] According to one or more embodiments, the semiconductor body includes a first semiconductor region of a first conductivity type. The first semiconductor region includes one or more first semiconductor layers. Furthermore, the first semiconductor region may include a first semiconductor layer sequence. The first semiconductor region is, for example, n-doped and formed to be n-conductive. Accordingly, in such cases, an n-conductive type is considered as the first conductivity type.

[0008] According to one or more embodiments, the radiation-emitting semiconductor body includes a second semiconductor region of a second conduction type. The second semiconductor region is disposed vertically, for example, on a first semiconductor region.

[0009] The second semiconductor region includes one or more second semiconductor layers. Furthermore, the second semiconductor region may include a sequence of second semiconductor layers. The second semiconductor region is, for example, p-doped and formed to be p-conductive. Accordingly, in such a case, a p-conductive type is considered as the first conduction type.

[0010] The first semiconductor region and / or the second semiconductor region is, for example, In x Al 1-x It includes P, where 0 ≤ x ≤ 1. In other words, the first semiconductor region and / or the second semiconductor region includes, for example, indium aluminum phosphide.

[0011] The second semiconductor region has a thickness of, for example, at least 10 nm and up to 5 µm in the vertical direction, and particularly about 200 nm.

[0012] According to one or more embodiments, the radiation-emitting semiconductor body includes an active region between a first semiconductor region and a second semiconductor region. In other words, an active region is disposed between the first semiconductor region and the second semiconductor region. The active region is formed to generate electromagnetic radiation during operation.

[0013] The active region is in direct contact with, for example, a first semiconductor region and / or a second semiconductor region. Alternatively, a barrier layer may be disposed on the active region. The barrier layer is disposed, for example, between the active region and the second semiconductor region. In this case, the barrier layer is in direct contact with the active region and the second semiconductor region. The barrier layer has a thickness in the vertical direction of, for example, a minimum of 5 nm and a maximum of 200 nm, particularly a minimum of 10 nm and a maximum of 100 nm.

[0014] The active region has a thickness in the vertical direction of, for example, a minimum of 2 nm and a maximum of 500 nm, and in particular, a minimum of 5 nm and a maximum of 100 nm.

[0015] The active region includes a pn-transition region for generating electromagnetic radiation, such as a double heterostructure, a single quantum well (SQW) structure, or a multiple quantum well (MQW) structure.

[0016] The active area continues to be, for example, In x Ga y Al 1-x It includes P, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1. In other words, the active region includes, for example, indium gallium aluminum phosphide. If the semiconductor body includes a barrier layer, the barrier layer is, for example, undoped In x Ga y Al 1-xIncludes P, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1.

[0017] According to one or more embodiments of a radiation-emitting semiconductor body, an active region has a larger band gap in the edge region of the semiconductor body than in the central region of the semiconductor body. For example, the active region has a first band gap in the central region. Subsequently, the active region has a second band gap, for example, in the edge region. In such cases, the first band gap is smaller than the second band gap. In particular, the first band gap is smaller than the second band gap at the center and / or at all locations.

[0018] The first band gap is defined, for example, by the first gap of the conduction band to the valence band in the active region within the central region. The second band gap is defined, for example, by the second gap of the conduction band to the valence band in the active region within the edge region. The valence band of the active region within the central region is connected continuously with the valence band of the active region within the edge region. Furthermore, the conduction band of the active region within the central region is connected continuously with the conduction band of the active region within the edge region. Accordingly, the band gap of the active region increases continuously, particularly from the central region toward the edge region.

[0019] The edge region ends where the second band gap is reduced by, for example, 10%, and particularly 15% of the difference between the first band gap and the second band gap. The central region ends where the first band gap is increased by, for example, 10%, and particularly 15% of the difference. In other words, the edge region and the central region are positioned apart from each other in lateral directions.

[0020] The edge region of the semiconductor body completely surrounds the central region of the semiconductor body in a lateral direction, for example. The edge region is formed to be continuous in a lateral direction, for example. The edge region surrounds the central region in a frame-like or ring-like manner, for example. For example, the edge region extends laterally into the interior of the semiconductor body from one or more lateral surfaces of the semiconductor body.

[0021] The edge region of the semiconductor body has a width. The width of the edge region is the minimum extension in lateral directions extending from the side surface of the semiconductor body toward the end of the edge region, where the second band gap is reduced by, for example, 10%, particularly 15% of the difference between the first band gap and the second band gap. The width of the edge region is, for example, a minimum of 50 nm and a maximum of 10 µm.

[0022] According to one or more embodiments of a radiation-emitting semiconductor body, the band gap of a second semiconductor region is the same within the edge region and within the central region. The second semiconductor region has a third band gap, particularly within the central region and within the edge region. The third band gap of the second semiconductor region is the same, particularly in the lateral directions and / or the vertical direction. In other words, the band gap of the second semiconductor region, particularly the third band gap, differs from the average value of the third band gap by 5% or less, particularly 1% or less, in the lateral directions and / or vertical directions within the central region and within the edge region.

[0023] Additionally, the band gap of the first semiconductor region is the same within the edge region and within the central region. The first semiconductor region has a fourth band gap, particularly within the central region and within the edge region. The fourth band gap of the first semiconductor region is the same, particularly in the lateral directions and / or the vertical direction. In other words, the band gap of the first semiconductor region, particularly the fourth band gap, differs from the average value of the fourth band gap by 5% or less, particularly 1% or less, in the lateral directions and / or vertical directions within the central region and within the edge region.

[0024] In one or more embodiments, the radiation-emitting semiconductor body comprises a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type, and an active region between the first semiconductor region and the second semiconductor region. The active region has a larger band gap in the edge region of the semiconductor body than in the central region of the semiconductor body. Furthermore, the band gap of the second semiconductor region is the same in the edge region as in the central region.

[0025] One concept of the radiation-emitting semiconductor body described in this application is, in particular, to form the active region such that the active region has a larger band gap in the edge region than in the central region. Accordingly, the emission of electromagnetic radiation from the edge regions is suppressed. Preferably, in this way, particularly uniform radiation characteristics and, consequently, particularly high efficiency can be achieved. Particularly preferably, non-radiative radiation (NRR) is suppressed in the edge regions by the larger band gap.

[0026] Furthermore, the second semiconductor region generally has an isotropic band gap. In this case, the progression of the band gaps is separated within the active region and within the second semiconductor region. Preferably, the second semiconductor region can be implemented particularly thin in this manner. Due to the relatively particularly thin implementation of the second semiconductor region, the Purcell factor can be relatively particularly large. Since the Purcell factor is proportional to the emission rate of the semiconductor body, the efficiency can be high accordingly.

[0027] According to one or more embodiments of a radiation-emitting semiconductor body, the active region comprises a first dopant within an edge region. The density of the first dopant within the active region within the edge region is, for example, generally constant. Here, "generally constant" means that the density may vary due to manufacturing. The density of the first dopant within the active region within the edge region is, for example, at least 10 per cm³ 15 , especially at least 10 per cubic centimeter 16 am.

[0028] According to one or more embodiments of a radiation-emitting semiconductor body, the density of the first dopant decreases continuously in the lateral direction within a transition region of the semiconductor body between an edge region and a central region. In such a case, the transition region is positioned in the lateral directions, particularly between the edge region and the central region.

[0029] In addition to the first dopant within the active region within the edge region, the active region includes empty spaces within the edge region. In this case, the density of the empty spaces is scaled with respect to the density of the first dopant. In particular, the density of the empty spaces is directly proportional to the density of the first dopant. Specifically, the density of the first dopant defines, for example, the density of the empty spaces within the active region within the edge region. Furthermore, the density of the empty spaces defines the band gap within the active region within the edge region, specifically the second band gap. In other words, the higher the density of the first dopant within the active region, the larger the second band gap.

[0030] According to one or more embodiments of the radiation-emitting semiconductor body, the width of the transition region is equal to the thickness of the maximum active region. The width of the transition region is, for example, the minimum gap in the lateral direction extending from the edge region toward the central region. The transition region has a width of, for example, a minimum of 2 nm and a maximum of 500 nm.

[0031] If the semiconductor body includes a barrier layer, the width of the transition region is, for example, equal to the maximum active region and the thickness of the barrier layer.

[0032] According to one or more embodiments of the radiation-emitting semiconductor body, the active region does not contain a first dopant within the central region. In particular, the active region generally does not contain a first dopant within the central region. Here, the fact that it generally does not contain a first dopant means that the density of the first dopant within the active region within the central region corresponds to a maximum of 5%, in particular a maximum of 1%, of the density of the first dopant within the active region within the edge region.

[0033] According to one or more embodiments of the radiation-emitting semiconductor body, the first dopant comprises a p-doping material. For example, the first dopant comprises Zn or Si, or is composed of Zn or Si.

[0034] According to one or more embodiments of a radiation-emitting semiconductor body, the second semiconductor region comprises a second dopant. The density of the second dopant defines a band gap within the second semiconductor region, particularly a third band gap, for example, within the edge region and within the central region.

[0035] The density of the second dopant within the second semiconductor region is, for example, at least 10 per cm³ 16 , especially at least 10 per cubic centimeter 17 In particular, the density of the second dopant within the second semiconductor region is generally the same within the edge region and within the central region. Here, "generally the same" means that the density of the second dopant differs from the average value of the density of the second dopant within the second semiconductor region in the lateral directions and / or vertical directions by 5% or less, particularly 1% or less.

[0036] The second dopant includes, for example, a p-doped material. In such cases, the second dopant includes Mg or Zn, or is composed of Mg or Zn.

[0037] According to one or more embodiments of the radiation-emitting semiconductor body, the first dopant and the second dopant are identical. In particular, Zn is considered as the first dopant and the second dopant.

[0038] According to one or more embodiments of the radiation-emitting semiconductor body, the second semiconductor region does not include the first dopant. In particular, the second semiconductor region generally does not include the first dopant. Here, the fact that it generally does not include the first dopant means that the density of the first dopant within the second semiconductor region corresponds to a maximum of 5%, in particular a maximum of 1%, of the density of the first dopant within the edge region and within the active region.

[0039] Alternatively or additionally, the first semiconductor region does not contain the first dopant. In particular, the first semiconductor region generally does not contain the first dopant. Here, the fact that it generally does not contain the first dopant means that the density of the first dopant within the first semiconductor region corresponds to less than 0.1% of the density of the first dopant within the active region within the edge region.

[0040] According to one or more embodiments of the radiation-emitting semiconductor body, the active region does not include the second dopant. Here, the fact that it generally does not include the second dopant means that the density of the second dopant within the active region corresponds to a maximum of 5%, particularly a maximum of 1%, of the density of the second dopant within the second semiconductor region.

[0041] According to one or more embodiments of a radiation-emitting semiconductor body, the band gap of the active region is at least 50 meV and at most 150 meV larger within the edge region than within the central region. In other words, the first band gap is at least 50 meV and at most 150 meV larger than the second band gap. For example, the first band gap is approximately 80 meV larger than the second band gap.

[0042] Furthermore, the present invention relates to a radiation-emitting semiconductor chip. Accordingly, all features and embodiments disclosed in relation to a radiation-emitting semiconductor chip are also disclosed in relation to a radiation-emitting semiconductor, and conversely, all features and embodiments disclosed in relation to a radiation-emitting semiconductor are also disclosed in relation to a radiation-emitting semiconductor chip.

[0043] According to one or more embodiments, a radiation-emitting semiconductor chip comprises a radiation-emitting semiconductor body as described in the present application. An example of a radiation-emitting semiconductor chip is a light-emitting diode (LED).

[0044] In particular, a micro-LED is considered as a radiation-emitting semiconductor chip. When a micro-LED is considered as a radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip has extensions in lateral directions of up to 100 µm, particularly up to 50 µm or 10 µm.

[0045] According to one or more embodiments, a radiation-emitting semiconductor chip comprises a first contact layer disposed on a first semiconductor region. The first contact layer is formed to insert a charge carrier, for example, into the first semiconductor region.

[0046] According to one or more embodiments, the radiation-emitting semiconductor chip includes a second contact layer disposed on a second semiconductor region. The second contact layer is formed to insert charge carriers, for example, into the second semiconductor region.

[0047] The first contact layer and / or the second contact layer comprises, for example, a transparent conductive metal or a transparent conductive oxide (TCO). The TCOs are transparent conductive materials and include, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide and / or indium tin oxide (ITO).

[0048] Alternatively, the second contact layer may comprise, for example, a reflective electrically conductive metal. In such a case, the second contact layer may comprise, for example, one or more of the following materials, or be composed of one or more of such materials: Au, Ag, Al, Cu, Rh, Pd, Pt.

[0049] It is also possible to have a mirror layer disposed on the second contact layer. In particular, the second contact layer and / or the mirror layer has a reflectivity of at least 90%, particularly at least 95%, for emitted electromagnetic radiation.

[0050] According to one or more embodiments of the radiation-emitting semiconductor chip, a second contact layer is disposed on a carrier. The second contact layer makes electrically conductive contact with the carrier, for example.

[0051] The carrier is formed of, for example, plastic, metal and / or metal-ceramic, or is composed of plastic, metal and / or metal-ceramic. The carrier is, for example, a circuit board, a printed circuit board (PCB), or a lead frame, or includes a circuit board, a printed circuit board, or a lead frame.

[0052] Furthermore, the present invention relates to a method for manufacturing a radiation-emitting semiconductor body capable of manufacturing the radiation-emitting semiconductor body described in particular in this application. Accordingly, all features and embodiments disclosed in relation to the radiation-emitting semiconductor body are also disclosed in relation to the manufacturing method, and conversely, all features and embodiments disclosed in relation to the manufacturing method are also disclosed in relation to the radiation-emitting semiconductor body.

[0053] According to one or more embodiments of the method, a first semiconductor region having a first conductivity type is prepared.

[0054] According to one or more embodiments of the method, an active region is provided on a first semiconductor region. In particular, the active region is provided epitaxially on the first semiconductor region.

[0055] According to one or more embodiments of the method, the band gap of an active region is expanded within an edge region of a semiconductor body to be manufactured. For example, the active region is doped within the edge region to expand the band gap. By doping, voids are created within the active region, for example, within the edge region. The voids are formed to define the band gap of the active region, for example, within the edge region.

[0056] According to one or more embodiments of the method, a second semiconductor region having a second conduction type is provided. In particular, the second semiconductor region is epitaxially grown on an active region. For example, the second semiconductor region is provided after doping the active region.

[0057] By growing a second region after doping the active region, the width of the doped edge region within the active layer in lateral directions can be implemented to be particularly small. Accordingly, semiconductor bodies having a particularly small lateral extension can be manufactured. Semiconductor bodies of the above type can have a maximum lateral extension of 100 nm to 10 µm (including the boundary).

[0058] In particular, in the method described in this application, a first semiconductor region is first prepared. For example, an active region is provided after the preparation. After the band gap of the active region is expanded within the edge region, a second semiconductor region is provided, in particular.

[0059] According to one or more embodiments of the method, doping is performed to expand the band gap of the active region, wherein a first dopant is inserted from the edge region into the active region during doping of the active region. For example, a gaseous, liquid, or solid p-doping material diffuses from the edge region into the active region.

[0060] According to one or more embodiments of the method, prior to doping the active region, a mask is provided over the active region such that the edge region does not include the mask. The mask covers, for example, a central region and a transition region positioned between the central region and the edge region.

[0061] The mask is formed specifically so that the first dopant does not diffuse into the active region through such a mask. Accordingly, the mask is not permeable to the first dopant.

[0062] For example, after providing an active region, an intermediate layer grows over the entire area of ​​the active region. For the intermediate layer, a semiconductor composite such as GaAs is considered.

[0063] The intermediate layer is structured so that, for example, prior to doping the active region, the edge region of the active region or the edge region of the barrier layer is exposed. This type of structuring can be achieved by a lithographic process. In such cases, the structured intermediate layer forms a mask.

[0064] Alternatively or additionally, it is also possible to provide another intermediate layer on the intermediate layer. As for the other intermediate layer, for example, SiO2, SiN, or SiO n This is considered. In such cases, another intermediate layer is considered as a mask. In such cases, the intermediate layer can be placed over the entire area above the active region, and the other intermediate layer can be placed entirely only within the central region and within the transition region.

[0065] According to one or more embodiments of the method, the mask is removed prior to providing the second semiconductor region. If the mask is formed by another intermediate layer, the intermediate layer may also be removed prior to providing the second semiconductor region. In particular, the intermediate layer and the other intermediate layer are removed in a common method step. The intermediate layer or the intermediate layer and the other intermediate layer are removed, for example, by a wet chemical etching process using citric acid.

[0066] Preferably, the intermediate layer protects the active region at least locally from external influences, particularly during doping. Accordingly, the second semiconductor region can be provided particularly well onto the active region after the removal of the mask.

[0067] According to one or more embodiments of the method, the second semiconductor region is doped with a second dopant when provided. In such a case, the second semiconductor region is created independently of the doping of the active region. Furthermore, the second semiconductor region may be created independently of the creation of the first semiconductor region. Accordingly, preferably, the second semiconductor region may be created and doped in a growth system different from the growth system of the first semiconductor region. Accordingly, dopant protraction may be preferably minimized, and the second semiconductor region may be implemented particularly thinly. Brief explanation of the drawing

[0068] In the following, a radiation-emitting semiconductor body, a radiation-emitting semiconductor chip, and a method for manufacturing the radiation-emitting semiconductor body are described in more detail with reference to examples and related drawings. FIGS. 1 to 3 are schematic cross-sectional views of method steps for manufacturing a semiconductor body according to one embodiment, and FIG. 4 is a schematic cross-sectional view of a radiation-emitting semiconductor chip according to one embodiment. Specific details for implementing the invention

[0069] Identical reference numerals are provided for elements in the drawings that are identical in form or function identically. The mutual size ratios of the drawings and the elements depicted therein are not considered to be suitable for scale. Rather, individual elements may be depicted excessively large for better illustration and / or better understanding.

[0070] In the method according to the embodiment of FIGS. 1, FIGS. 2 and FIGS. 3, a first semiconductor region (2) having a first conduction type is prepared according to FIGS. 1. The first semiconductor region (2) is formed, for example, to be n-doped. Subsequently, the first semiconductor region (2) is formed on a substrate (12), for example, in an epitaxial manner. The substrate (12) is particularly considered to be a growth substrate for the first semiconductor region (2).

[0071] In another step, an active region (4) is provided onto the first semiconductor region (2), particularly over the entire area. Additionally, a barrier layer (8) is provided onto the active region (4), particularly over the entire area. For example, the active region (4) is provided epitaxially onto the first semiconductor region (2). Subsequently, the barrier layer (8) is provided onto the active region (4), for example, epitaxially.

[0072] In addition, after the barrier layer (8) is provided, an intermediate layer (9) is provided on the barrier layer (8), particularly over the entire area. For example, the intermediate layer (9) is also provided in an epitaxial manner.

[0073] The active region (4) and the barrier layer (8) particularly comprise indium gallium aluminum phosphide, and the intermediate layer (9) particularly comprises gallium arsenide. Furthermore, the first semiconductor region (2) particularly comprises indium aluminum phosphide.

[0074] Subsequently, the intermediate layer (9) is structured as schematically illustrated in FIG. 2. The intermediate layer (9) is structured, for example, by a lithography process. After structuring, the structured intermediate layer (9) covers only the central region (6) and the transition region (7) of the semiconductor body (1) to be manufactured. In other words, the barrier layer (8) is exposed within the edge region (5) that completely surrounds the central region (6) by the removal of the intermediate layer (9).

[0075] Subsequently, another intermediate layer (10) may be provided on the intermediate layer (9) within the central region (6), particularly over the entire area. Alternatively, it is also possible to provide another intermediate layer (10) on the intermediate layer (9), particularly over the entire area, prior to the structuring of the intermediate layer (9). In such a case, the intermediate layer (9) and the other intermediate layer (10) are structured, for example, by a lithography process, so that the barrier layer (8) is consequently exposed within the edge region (5).

[0076] The above intermediate layer (9) and the other intermediate layer (10) form a mask (11). In another step, the active region (4) is doped with a first dopant (13) within the edge region (5). In this case, the mask (11) prevents the diffusion of the first dopant (13) into the central region (6). However, it is also possible for the first dopant (13) to diffuse locally under the mask (11) in lateral directions during this step.

[0077] In this case, the active region (4) has a density of the first dopant (13) in the edge region (5) that is greater than the density of the first dopant (13) in the central region (6). Accordingly, the active region (4) has a band gap in the edge region (5) that is approximately 80 meV greater than the band gap in the central region (6).

[0078] Because the first dopant (13) diffuses locally under the mask (11) in lateral directions, the density of the first dopant (13) within the active region (4) continuously decreases from the edge region (5) toward the central region (6). The region where the first dopant (13) diffuses under the mask (11) corresponds to a transition region (7). The transition region (7) is positioned between the edge region (5) and the central region (6) in lateral directions.

[0079] The width of the above transition region (7) is up to the thickness of the above active region (4) and the thickness of the above barrier layer (8). In other words, the first dopant (13) can diffuse into the above active region (4) under the mask (11) in lateral directions up to the thickness of the above active region (4) and the above barrier layer (8).

[0080] In another method step, as schematically illustrated in FIG. 3, the mask (11) is removed by an etching process. The mask (11), in particular the intermediate layer (9) and another intermediate layer (10), is removed so that the barrier layer (8) is completely exposed.

[0081] Subsequently, a second semiconductor region (3) having a second conduction type is provided on an exposed barrier layer (8). The second semiconductor region (3) is formed to be, for example, p-doped. The second semiconductor region (3) is provided particularly epitaxially on the barrier layer (8). Additionally, the second semiconductor region (3) is doped with a second dopant (14) when provided.

[0082] For example, the first dopant (13) and the second dopant (14) are different from each other. In such a case, the first dopant (13) may be formed by Zn, and the second dopant (14) may be formed by Mg. In this case, in particular, the second semiconductor region (3) does not include the first dopant (13).

[0083] Alternatively, the first dopant (13) and the second dopant (14) are identical. In this case, the first dopant (13) and the second dopant (14) are formed by Zn.

[0084] For cases where the above dopants (13, 14) are different or the same, the second semiconductor region (3) has the same band gap in the lateral directions and / or vertical directions within the edge region (5) and within the central region (6), unlike the active region (4).

[0085] Additionally, after the second semiconductor region (3) is provided, a finishing layer (15) for passivation of the second semiconductor region (3) is grown on the second semiconductor region (3). The finishing layer (15) includes a semiconductor material such as, for example, GaAs.

[0086] Subsequently, the substrate (12) can be removed from the first semiconductor region (2) (not shown in the drawing).

[0087] A radiation-emitting semiconductor chip (16) according to the embodiment of FIG. 4 comprises a radiation-emitting semiconductor body (1) manufactured by a method illustrated, for example, in relation to FIG. 1 to 3. The radiation-emitting semiconductor body (1) comprises a first semiconductor region (2), a second semiconductor region (3), and an active region (4) disposed between the first semiconductor region (2) and the second semiconductor region (3). In such a case, as illustrated, for example, in relation to FIG. 1 to 3, a substrate (12) is removed from the first semiconductor region (2).

[0088] A first contact layer (17) is disposed on the first semiconductor region (2). Subsequently, a second contact layer (18) is disposed on the second semiconductor region (3).

[0089] Additionally, the second contact layer (18) is disposed on the carrier (19). The second contact layer (18) makes electrically conductive contact with the carrier (19).

[0090] This patent application claims priority to German patent application 10 2020 106 113.7, and accordingly, the disclosures of said application are incorporated into this application by reference.

[0091] Even if not all combinations of features are explicitly described, the features and embodiments described in relation to the drawings may be combined with one another according to other embodiments. Furthermore, the embodiments described in relation to the drawings may alternatively or additionally have other features according to the detailed description of the general part.

[0092] The present invention is not limited by the description with reference to the embodiments. Rather, the present invention includes each novel feature and each combination of features, which means that each combination of features is included within the claims, in particular, even if such feature or such combination itself is not explicitly presented in the claims or embodiments. Explanation of the symbols

[0093] 1 Radiation-emitting semiconductor body 2. First semiconductor area 3. Second Semiconductor Area 4 active areas 5 edge area 6 central area 7 Transition Zone 8 barrier layer 9 middle layer 10 Another middle layer 11 masks 12 boards 13. The 1st Dopant 14 Second Dopant 15 finishing layer 16 Radiation-emitting semiconductor body 17 First contact layer 18 Second contact layer 19 Carrier

Claims

Claim 1 A radiation-emitting semiconductor body (1) comprises: a first semiconductor region (2) of a first conductivity type; a second semiconductor region (3) of a second conductivity type; and an active region (4) between the first semiconductor region (2) and the second semiconductor region (3); the active region comprises InGaAlP; the first conductivity type is formed to be n-conductive and the second conductivity type is formed to be p-conductive; the active region (4) has a larger band gap in the edge region (5) of the semiconductor body (1) than in the central region (6) of the semiconductor body (1); the active region (4) comprises a first dopant (13) in the edge region (5), and the density of the first dopant (13) is a transition of the semiconductor body (1) between the edge region (5) and the central region (6). A radiation-emitting semiconductor body that decreases continuously in lateral directions within a region (7), wherein the width of the transition region (7) is at most equal to the thickness of the active region (4), and the band gap of the second semiconductor region (3) is the same within the edge region (5) and within the central region (6). Claim 2 delete Claim 3 In claim 1, the active region (4) is a radiation-emitting semiconductor body that does not include the first dopant (13) within the central region (6). Claim 4 In claim 1, the first dopant (13) is a radiation-emitting semiconductor body comprising a p-doping material. Claim 5 In claim 1, the second semiconductor region (3) is a radiation-emitting semiconductor body including a second dopant (14). Claim 6 In paragraph 5, the first dopant (13) and the second dopant (14) are identical radiation-emitting semiconductor bodies. Claim 7 In claim 1, the second semiconductor region (3) is a radiation-emitting semiconductor body that does not include the first dopant (13). Claim 8 In paragraph 5, the above active region (4) is a radiation-emitting semiconductor body that does not include the above second dopant (14). Claim 9 A radiation-emitting semiconductor body according to claim 1, wherein the band gap of the active region is at least 50 meV and at most 150 meV larger in the edge region (5) than in the central region (6). Claim 10 A radiation-emitting semiconductor chip comprising: a radiation-emitting semiconductor body (1) according to claim 1; a first contact layer disposed on a first semiconductor region (2); and a second contact layer disposed on a second semiconductor region (3). Claim 11 In item 10, the radiation-emitting semiconductor chip, wherein the second contact layer is disposed on a carrier. Claim 12 A method for manufacturing a radiation-emitting semiconductor body (1), comprising: a step of preparing a first semiconductor region (2) having a first conductivity type, wherein the first conductivity type is formed to have n-conductivity and the second conductivity type is formed to have p-conductivity; a step of providing an active region (4) on the first semiconductor region (2), wherein the active region comprises InGaAlP; a step of expanding the band gap of the active region (4) within the edge region (5) manufactured by doping the edge region (5) of the semiconductor body (1); and a step of providing a second semiconductor region (3) having a second conductivity type after doping the active region (4), wherein the band gap of the second semiconductor region (3) is the same within the edge region (5) and within the central region (6) of the semiconductor body (1). Claim 13 A method for manufacturing a radiation-emitting semiconductor body, wherein, in claim 12, a first dopant (13) is inserted into the active region (4) within the edge region (5) during doping of the active region (4). Claim 14 A method for manufacturing a radiation-emitting semiconductor body according to claim 13, wherein, prior to doping the active region (4), a mask (11) is provided on the active region (4) so ​​that the edge region (5) does not include a mask. Claim 15 A method for manufacturing a radiation-emitting semiconductor body, wherein the mask (11) is removed prior to providing the second semiconductor region (3) according to claim 14. Claim 16 A method for manufacturing a radiation-emitting semiconductor body, wherein the second semiconductor region (3) is doped by a second dopant (14) when providing the second semiconductor region (3) according to claim 12.

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