Susceptor

Abstract

The present invention relates to a susceptor, wherein the susceptor of the present invention comprises an insulating plate having an embedded electrode and accommodating a substrate on its upper surface, a base body bonded to the insulating plate and having a purge channel, and a hollow shaft bonded to the base body and having one or more through holes in its sidewalls that communicate with the purge channel, wherein the insulating plate comprises a guide channel communicating with the purge channel, and the guide channel extends to the upper surface of the insulating plate and includes a guide hole formed at an end, and a plurality of guide holes are arranged along the edge of the insulating plate.

Description

Technology Field

[0001] The present invention relates to a susceptor, and in particular, to a susceptor improved to enable an effective air flow structure for purging. Background Technology

[0002] Generally, semiconductor devices or display devices are manufactured through a semiconductor process in which a plurality of thin film layers, including dielectric layers and metal layers, are sequentially stacked on a glass substrate, a flexible substrate, or a semiconductor wafer substrate, and then patterned. These thin film layers are sequentially deposited on the substrate through a Chemical Vapor Deposition (CVD) process or a Physical Vapor Deposition (PVD) process. The CVD processes include Low Pressure CVD (LPCVD), Plasma Enhanced CVD (PECVD), and Metal Organic CVD (MOCVD) processes. Support devices or susceptors are provided in these CVD and PVD devices to support glass substrates, flexible substrates, semiconductor wafer substrates, etc., and to process the semiconductor process. The above susceptor may be equipped with a heating element for heating a substrate in a heat treatment process, etc., and may be equipped with a radio frequency (RF) electrode for forming plasma in an etching process of thin film layers formed on a substrate instead of a heating element, etc., or may be equipped with a radio frequency (RF) electrode together with a heating element.

[0003] However, conventional general susceptors have a structure in which, when supplying purge gas through the arrangement of purge holes or grooves on the upper surface of the susceptor where the substrate is placed, the purge gas cannot be supplied uniformly across the entire upper surface of the susceptor, especially at the edge side, so there is a need to improve this.

[0004] FIG. 1 is an exemplary cross-sectional view of the edge side of a conventional susceptor enlarged.

[0005] Referring to FIG. 1, a conventional susceptor has a purge channel (23) installed between a support assembly (20), that is, a lower element (21) and an upper element (22), and supplies a purge gas toward a substrate (10) placed on an upper surface through the purge channel (23), and uses an additional purge ring or edge ring (30) arranged annularly along the edge of the substrate (10) so that the purge gas is supplied to the lower part of the substrate (10) through a side channel (24) between the support assembly (20) and the edge ring (30). Such a structure is disclosed in application No. 10-2004-7011605 (January 29, 2003), etc.

[0006] However, this conventional susceptor is a heater for improving the issue of uneven thin film deposition on the outermost part of a substrate (10), such as a wafer, but it is a structure in which an edge ring (30) for forming a side channel (24) to move gas to the upper substrate (10) through the outlet of the purge channel (23) and to control the flow of gas must be additionally attached along the outer part of the susceptor.

[0007] Here, since the edge ring (30) is made of a ceramic material such as alumina, just like the support assembly (20), there is a problem that chipping or cracking can easily occur due to the brittle nature of the ceramic material. Additionally, chipping or cracking may also occur during the fastening process of the edge ring (30). Furthermore, the edge ring (30) must be manufactured separately from the support assembly (20), and since it is classified as a consumable part, it is difficult to manage and incurs additional costs.

[0008] Furthermore, such conventional susceptors have a problem in that, when purge gas is applied vertically to the rear surface of the substrate (10) from the lower edge of the substrate (10), a force opposite to the chucking force of the substrate (10) is applied, and severe warpage of the substrate (10) may occur during the high-temperature deposition process. At this time, since the diameter of the substrate (10) is larger than the diameter of the upper surface of the susceptor, the substrate (10) is positioned outside the edge of the upper surface of the susceptor, and there is a possibility that warpage of the substrate (10) may occur due to a fine step in the gas flow. The problem to be solved

[0009] Accordingly, the present invention has been devised to solve the aforementioned problems, and the objective of the present invention is to provide a susceptor configured such that the pressure received by the purge gas on the upper surface of the susceptor, that is, the substrate receiving surface on the insulating plate, is minimized by configuring an air flow structure in which a flow path extending toward the edge through a base body is diverted toward the edge of the upper surface of the insulating plate. means of solving the problem

[0010] First, to summarize the features of the present invention, a susceptor according to one aspect of the present invention for achieving the above objective comprises: an insulating plate having an embedded electrode and accommodating a substrate on its upper surface; a base body bonded to the insulating plate and having a purge channel; and a hollow shaft bonded to the base body and having one or more through holes in its sidewalls that communicate with the purge channel, wherein the insulating plate includes a guide channel communicating with the purge channel, and the guide channel extends to the upper surface of the insulating plate and includes a guide hole formed at the end, and a plurality of guide holes are arranged along the edge of the insulating plate.

[0011] For example, the guide hole is configured to be formed between the side of the substrate and the insulating plate at the edge of the insulating plate when the substrate is received, and the guide channel is configured so that purge gas flows through the guide channel along the rear surface of the substrate from the inner side near the center in the diameter direction of the insulating plate toward the outer side and comes out into the guide hole.

[0012] In another example, the guide hole is configured to be formed between the side of the substrate and the insulating plate at the edge of the insulating plate when the substrate is received, and the guide channel is configured so that purge gas flows through the guide channel from the outer side far from the center in the diameter direction of the insulating plate toward the inner side and comes out into the guide hole.

[0013] The direction of flow from the outer side to the inner side of the above insulating plate is formed through a diagonal flow path.

[0014] The direction of flow from the outer side to the inner side of the insulating plate is formed through a flow path parallel to the upper surface of the insulating plate.

[0015] The insulating plate comprises a single layer formed such that the guide channel is positioned inwardly from the edge of the substrate, and the guide hole has a groove that forms a step with the substrate receiving surface of the insulating plate and a gap with the side of the substrate when the substrate is received.

[0016] The insulating plate comprises a first layer formed such that the guide channel is positioned outwardly from the edge of the substrate, and a second layer formed such that the guide channel extends from the first layer to inwardly from the edge of the substrate, and the guide hole has a groove that forms a step with the substrate receiving surface of the insulating plate and a gap with the side of the substrate when the substrate is received.

[0017] The insulating plate comprises a single layer formed such that the guide channel is positioned outward from the edge of the substrate, and the guide hole is positioned at the corner of the portion extending from the substrate receiving surface of the insulating plate to the upper edge surface.

[0018] The centerline of the diagonal path of the guide path extending into the guide hole may face the center of the corner.

[0019] The end of the diagonal path of the guide path extending into the guide hole can be formed entirely on the same plane as the substrate receiving surface.

[0020] The end of the diagonal path of the guide path extending into the guide hole may be formed in the portion extending from the substrate receiving surface of the insulating plate to the upper edge surface.

[0021] The insulating plate may include a first layer formed such that the guide channel is positioned outwardly from the edge of the substrate, and a second layer formed such that the centerline of the extension direction of the guide channel, which extends from the first layer to the guide hole, is oriented parallel to the upper surface of the insulating plate. Effects of the invention

[0022] The susceptor according to the present invention does not have a conventional edge ring (30) separate from the support assembly, that is, the combination of the base body and the insulating plate, and includes an air flow structure in which a flow path extending toward the edge through the base body is redirected toward the edge of the upper surface of the insulating plate, and is configured so as to minimize the pressure received by the purge gas on the substrate on the upper surface of the insulating plate. The heater function of the susceptor of the present invention is structurally very stable by having an integrated purge ring / edge ring, and can eliminate chipping or cracking that may occur during the fastening process of the conventional edge ring (30).

[0023] In addition, according to the susceptor of the present invention, by supplying an inert gas through a fluid outlet directed toward the edge of the substrate or the edge of the substrate receiving surface for a gas purging function, issues such as non-uniformity of thin film deposition on the edge of the substrate, backside deposition of the substrate, contamination control, parasitic plasma, and damage to the susceptor caused by corrosive gas can be positively improved and minimized.

[0024] In particular, through the structure of the purge gas flow path of the present invention, the pressure acting on the backside of the substrate can be minimized even when an inert gas is supplied, and by fabricating a susceptor based on a ceramic material such as AlN, which has a thermal expansion coefficient similar to that of a substrate such as a wafer, the force applied to the substrate is minimized compared to conventional susceptors, thereby enabling the gas purge function while simultaneously minimizing wafer warpage that occurs during the high-temperature deposition process. Brief explanation of the drawing

[0025] The accompanying drawings, included as part of the detailed description to aid in understanding the present invention, provide embodiments of the present invention and explain the technical concept of the present invention together with the detailed description. FIG. 1 is an exemplary cross-sectional view of the edge side of a conventional susceptor enlarged. FIG. 2a is a schematic cross-sectional view of a susceptor according to a first embodiment of the present invention. Figure 2b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 2a. FIG. 3a is a schematic cross-sectional view of a susceptor according to a second embodiment of the present invention. Figure 3b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 3a. FIG. 4a is a schematic cross-sectional view of a susceptor according to a third embodiment of the present invention. Figure 4b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 4a. FIG. 5a is a schematic cross-sectional view of a susceptor according to a fourth embodiment of the present invention. Figure 5b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 5a. FIG. 6a is a schematic cross-sectional view of a susceptor according to a fifth embodiment of the present invention. Figure 6b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 6a. FIG. 7a is a schematic cross-sectional view of a susceptor according to a sixth embodiment of the present invention. Figure 7b shows a top view and a bottom view of the base body and insulating plate for the susceptor of Figure 7a. Specific details for implementing the invention

[0026] The present invention will be described in detail below with reference to the attached drawings. In this case, identical components in each drawing are denoted by the same reference numeral whenever possible. Furthermore, detailed descriptions of already known functions and / or configurations are omitted. The content disclosed below focuses on the parts necessary for understanding the operation according to various embodiments, and descriptions of elements that may obscure the gist of the explanation are omitted. Additionally, some components in the drawings may be exaggerated, omitted, or schematically depicted. The size of each component does not entirely reflect its actual size, and therefore, the contents described herein are not limited by the relative sizes or spacing of the components depicted in each drawing.

[0027] In describing the embodiments of the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such detailed descriptions may unnecessarily obscure the essence of the invention. Furthermore, the terms described below are defined in consideration of their functions within the present invention, and these may vary depending on the intentions or practices of the user or operator. Therefore, such definitions should be based on the content throughout this specification. Terms used in the detailed description are intended merely to describe the embodiments of the present invention and should not be limiting in any way. Unless explicitly stated otherwise, expressions in the singular form include the meaning of the plural form. In this description, expressions such as "include" or "comprise" are intended to refer to certain characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof, and should not be interpreted to exclude the existence or possibility of one or more other characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof other than those described.

[0028] Additionally, terms such as first, second, etc., may be used to describe various components, but said components are not limited by said terms, and said terms are used only for the purpose of distinguishing one component from another.

[0029] First, before describing the first embodiment (Fig. 2a, Fig. 2b), second embodiment (Fig. 3a, Fig. 3b), third embodiment (Fig. 4a, Fig. 4b), fourth embodiment (Fig. 5a, Fig. 5b), fifth embodiment (Fig. 6a, Fig. 6b), and seventh embodiment (Fig. 7a, Fig. 7b) of the susceptor of the present invention below, we will first describe the common components of the first to sixth embodiments of the present invention.

[0030] Each susceptor according to the first to sixth embodiments of the present invention comprises: an insulating plate (110) having an embedded electrode (51, 52) and accommodating a substrate (10) on its upper surface; a base body (120) bonded to the insulating plate (110) and having a purge channel (125); and a hollow shaft (130) bonded to the base body (120) and having one or more through holes (135) in its sidewall that communicate with the purge channel (125).

[0031] That is, each susceptor of the present invention includes an insulating plate (110) and a base body (120) bonded using an adhesive such as ceramic paste, and a hollow shaft (130) bonded using an adhesive such as ceramic paste is included at the bottom of the base body (120) to support the bonded body (110, 120).

[0032] The electrodes (51, 52) embedded and contained within the insulating plate (110) are exemplified as including a heating element (electrode) (51) and a high-frequency electrode (52). For example, the susceptor of the present invention may have a heater function that heats the substrate (10) to be processed to a predetermined temperature during a semiconductor process using the heating element (51). Additionally, the susceptor of the present invention may be equipped with a high-frequency electrode (52), and the high-frequency electrode (52) may be used as a plasma electrode for a plasma generation function for processes such as plasma-enhanced chemical vapor deposition or dry etching in RIE (Reactive Ion Etch) equipment. In some cases, the high-frequency electrode (52) may be used as a chuck electrode for an electrostatic chuck function to support the substrate (10) placed on the insulating plate (110). In addition, a chuck electrode (not shown) for an electrostatic chuck function may be additionally provided separately from the high-frequency electrode (52). At this time, the chuck electrode (not shown) can be placed at an appropriate location spaced apart from other electrodes, such as above the high-frequency electrode (52), between the high-frequency electrode (52) and the heating element (51), and / or below the heating element (51).

[0033] These electrodes (51, 52) are connected to respective power supply rods (not shown) that are accommodated in the internal space through which the hollow shaft (130) penetrates, and the electrodes (51, 52) can receive the necessary power from the outside through the power supply rods. The insulating plate (110) can be configured to enable various semiconductor processes by stably supporting the substrate (10) to be processed, and by heating using the heating element (51) and / or by using the electrodes (52) for electrostatic chucking or plasma generation functions.

[0034] The insulating plate (110) and base body (120) may be formed as circular plate-like structures made of ceramic material; however, they are not necessarily limited to the circular shape and may be formed in various shapes as needed. Here, the ceramic material is Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C y It may be at least one material selected from BN, SiO2, SiC, YAG, Mullite, and AlF3, and preferably aluminum nitride (AlN). Furthermore, the ceramic powder may be molded and sintered to form an insulating plate (110), and each ceramic powder for this purpose may optionally contain yttrium oxide powder in an amount of about 0.1 to 10%, preferably about 1 to 5%.

[0035] The heating element (or heating electrode) (51) may be in the form of a plate-shaped coil formed by a heating wire (or resistance wire), and in some cases, may be formed in the form of a flat plate. Additionally, the heating element (51) may be formed in a multi-layer structure for precise temperature control. This heating element (51) is connected to a power source through the power supply rod (not shown) to supply power, and can perform the function of heating a substrate to be processed (10) on an insulating plate (110) to a predetermined temperature to perform heating, deposition, and etching processes of the substrate in a semiconductor process.

[0036] The electrodes (51, 52) may be made of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or an alloy thereof, and preferably may be made of molybdenum (Mo).

[0037] The shaft (130) is hollow, having a penetrating internal space, and is coupled to the lower surface of the base body (120). The shaft (130) can be formed of a ceramic material and coupled to an insulating plate (110). Here, the ceramic material is Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C y It may be at least one material selected from BN, SiO2, SiC, YAG, Mullite, and AlF3, and preferably aluminum nitride (AlN). Furthermore, the ceramic powder may be molded and sintered to form a shaft (130), and each ceramic powder for this purpose may optionally contain 0.1 to 10%, preferably about 1 to 5%, of yttrium oxide powder.

[0038] Hereinafter, each of the first embodiment (Fig. 2a, Fig. 2b), second embodiment (Fig. 3a, Fig. 3b), third embodiment (Fig. 4a, Fig. 4b), fourth embodiment (Fig. 5a, Fig. 5b), fifth embodiment (Fig. 6a, Fig. 6b), and seventh embodiment (Fig. 7a, Fig. 7b) of the susceptor of the present invention will be described in detail with reference to their respective drawings.

[0039] FIG. 2a is a schematic cross-sectional view of a susceptor (100) according to a first embodiment of the present invention.

[0040] FIG. 2b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (100) of FIG. 2a.

[0041] Referring to FIGS. 2a and 2b, the insulating plate (110) includes a guide channel (115) that communicates with the purge channel (125) of the base body (120). The guide channel (115) extends to the upper surface of the insulating plate (110) and includes a guide hole (111) formed at the end, and a plurality of guide holes (111) are formed to be arranged along the edge of the insulating plate (110).

[0042] Here, when the substrate (10) is received in the susceptor (100), the purge gas provided through the lower part of the through hole (135) of the shaft (130) passes through the purge path (125) and the guide path (115). That is, the purge gas first flows along the rear surface of the substrate (10) through the purge path (125) from the inner side (or center (O) side) near the center in the diameter direction of the insulating plate (110) toward the outer direction (or edge direction). Next, the purge gas flows from the edge of the insulating plate (110) between the side of the substrate (10) and the insulating plate (110) through the guide path (115) and comes out through the guide hole (111).

[0043] To this end, the insulating plate (110) comprises a single layer formed such that a guide channel (115) is positioned inward (or towards the center (O) side) than the edge of the substrate (10), and a guide hole (111) provided at the end side of the guide channel (115) has a groove (111-1) that forms a step with the substrate receiving surface (9) of the insulating plate (110) and a gap (111-2) with the side (10-1) of the substrate (10) when the substrate (10) is received.

[0044] The insulating plate (110) forms a guide channel (115) in the one layer to fluidly communicate purge gas from the purge channel (125) to the guide hole (111).

[0045] FIG. 3a is a schematic cross-sectional view of a susceptor (200) according to a second embodiment of the present invention.

[0046] FIG. 3b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (200) of FIG. 3a.

[0047] Referring to FIGS. 3a and 3b, the insulating plate (110) includes a guide channel (115) that communicates with the purge channel (125) of the base body (120). The guide channel (115) extends to the upper surface of the insulating plate (110) and includes a guide hole (111) formed at the end, and a plurality of guide holes (111) are formed to be arranged along the edge of the insulating plate (110).

[0048] Here, when the substrate (10) is received in the susceptor (100), the purge gas provided through the lower part of the through hole (135) of the shaft (130) passes through the purge path (125) and the guide path (115). That is, the purge gas first flows along the rear surface of the substrate (10) through the purge path (125) from the inner side (or center (O) side) near the center in the diameter direction of the insulating plate (110) toward the outer direction (or edge direction). Next, the purge gas flows from the edge of the insulating plate (110) between the side of the substrate (10) and the insulating plate (110) through the guide path (115) and comes out through the guide hole (111).

[0049] To this end, the insulating plate (110) includes a first layer (110-1) and a second layer (110-2) for forming a guide channel (115) to fluidly communicate purge gas from the purge channel (125) to the guide hole (111).

[0050] In the first layer (110-1), a guide channel (115) is formed so as to be positioned outward from the edge of the substrate (10), and in the second layer (110-2), a guide channel (115) is formed so as to extend from the first layer (110-1) inward from the edge of the substrate (10).

[0051] A guide hole (111) is provided at the end side of the guide channel (115) of the second layer (110-2), and the guide hole (111) has a groove (111-1) that forms a step with the substrate receiving surface (9) of the insulating plate (110) and a gap (111-2) with the side (10-1) of the substrate (10) when the substrate (10) is received.

[0052] FIG. 4a is a schematic cross-sectional view of a susceptor (300) according to a third embodiment of the present invention.

[0053] FIG. 4b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (300) of FIG. 4a.

[0054] Referring to FIGS. 4a and 4b, the insulating plate (110) includes a guide channel (115) that communicates with the purge channel (125) of the base body (120). The guide channel (115) extends to the upper surface of the insulating plate (110) and includes a guide hole (111) formed at the end, and a plurality of guide holes (111) are formed to be arranged along the edge of the insulating plate (110).

[0055] Here, when the substrate (10) is received in the susceptor (100), the purge gas provided through the lower part of the through hole (135) of the shaft (130) first flows inward (41) through the diagonal direction flow path (405) from the outer side far from the center in the diameter direction of the insulating plate (110) inside the insulating plate (110). Next, the purge gas comes out from the edge of the insulating plate (110) into the guide hole (111) between the side of the substrate (10) and the insulating plate (110) by the configuration of the guide flow path (115).

[0056] To this end, the insulating plate (110) comprises a single layer formed such that a guide channel (115) is positioned outward from the edge of the substrate (10), and a guide hole (111) provided at the end side of the guide channel (115) is positioned at the corner of the portion extending from the substrate receiving surface (9) of the insulating plate (110) to the edge upper surface (91).

[0057] Here, the diagonal direction channel (405) is formed such that the centerline (901) of the diagonal direction channel (405) faces the center of the corner.

[0058] Cases where the diagonal direction of the guide channel (115) extending to the guide hole (111) is different are exemplified in the susceptor (400) according to the fourth embodiment of the present invention and the susceptor (500) according to the fifth embodiment of the present invention.

[0059] FIG. 5a is a schematic cross-sectional view of a susceptor (400) according to a fourth embodiment of the present invention.

[0060] FIG. 5b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (400) of FIG. 5a.

[0061] Referring to FIGS. 5a and 5b, the susceptor (400) according to the fourth embodiment of the present invention is similar to the susceptor (300) according to the third embodiment of the present invention described in FIGS. 4a and 4b.

[0062] However, here, the diagonal path (405) of the guide path (115) extending to the guide hole (111) is formed to be deflected toward the substrate receiving surface (9) so that the end of the diagonal path (405) does not go beyond the center of the corner. That is, the end of the diagonal path (405) is formed entirely on the same plane as the substrate receiving surface (9).

[0063] FIG. 6a is a schematic cross-sectional view of a susceptor (500) according to a fifth embodiment of the present invention.

[0064] FIG. 6b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (500) of FIG. 6a.

[0065] Referring to FIGS. 6a and 6b, the susceptor (500) according to the fifth embodiment of the present invention is similar to the susceptor (300) according to the third embodiment of the present invention described in FIGS. 4a and 4b.

[0066] However, here, the diagonal direction channel (405) of the guide channel (115) extending to the guide hole (111) is formed to be deflected toward the edge upper surface (91) so that the end of the diagonal direction channel (405) does not go beyond the center of the corner. That is, the end of the diagonal direction channel (405) is formed in the portion that extends from the substrate receiving surface (9) of the insulating plate (110) to the edge upper surface (91) in its entirety.

[0067] FIG. 7a is a schematic cross-sectional view of a susceptor (600) according to a sixth embodiment of the present invention.

[0068] FIG. 7b shows a top view and a bottom view of the base body (120) and the insulating plate (110) for the susceptor (600) of FIG. 7a.

[0069] Referring to FIGS. 7a and 7b, the insulating plate (110) includes a guide channel (115) that communicates with the purge channel (125) of the base body (120). The guide channel (115) extends to the upper surface of the insulating plate (110) and includes a guide hole (111) formed at the end, and a plurality of guide holes (111) are formed to be arranged along the edge of the insulating plate (110).

[0070] Here, when the substrate (10) is received in the susceptor (100), the purge gas provided through the lower part of the through hole (135) of the shaft (130) first flows inward (41) through a parallel direction flow path (505) from the outside of the insulating plate (110) to the substrate receiving surface (9) or the upper surface of the insulating plate (110). Next, the purge gas comes out from the edge of the insulating plate (110) into the guide hole (111) between the side of the substrate (10) and the insulating plate (110) by the configuration of the guide flow path (115).

[0071] To this end, the insulating plate (110) includes a first layer (110-1) and a second layer (110-2) for forming a guide channel (115) to fluidly communicate purge gas from the purge channel (125) to the guide hole (111).

[0072] In the first layer (110-1), a guide channel (115) is formed so as to be positioned outward from the edge of the substrate (10), and in the second layer (110-2), a guide channel (115) is formed such that the guide channel (115) extends from the first layer (110-1) to the guide hole (111), that is, the center line of the extension direction of the parallel channel (505) on the upper surface is formed so as to face in a direction (92) parallel to the upper surface of the substrate receiving surface (9) or the insulating plate (110).

[0073] As described above, the susceptor (100 / 200 / 300 / 400 / 500 / 600) according to the embodiments of the present invention does not have a conventional edge ring (30) separately from the support assembly, that is, the combination of the base body (120) and the insulating plate (110), and includes an air flow structure in which a flow path extending toward the edge through the base body (120) is diverted toward the edge of the upper surface of the insulating plate (110), and is configured so that the pressure received by the purge gas on the substrate (10) on the upper surface of the insulating plate (110) is minimized. The heater function, etc. of the susceptor of the present invention is structurally very stable by having an integrated purge ring / edge ring, and can eliminate chipping or cracking that may occur during the fastening process of the conventional edge ring (30).

[0074] In addition, by supplying an inert gas through a purge gas fluid outlet directed toward the edge of the substrate (10) or the edge of the substrate receiving surface (9) for the gas purge function, issues such as non-uniformity of thin film deposition on the substrate edge, backside deposition, contamination control, parasitic plasma, and susceptor damage caused by corrosive gas can be positively improved and minimized.

[0075] In particular, through the structure of the purge gas flow path of the present invention, the pressure acting on the back side of the substrate (10) can be minimized even when an inert gas is supplied, and by fabricating a susceptor based on a ceramic material such as AlN that has a thermal expansion coefficient similar to that of a substrate such as a wafer, the force applied to the substrate can be minimized compared to a conventional susceptor, thereby enabling the gas purge function to be used while simultaneously minimizing wafer warpage that occurs during the high-temperature deposition process.

[0076] As described above, the present invention has been explained by specific details such as specific components, limited embodiments, and drawings; however, this is provided merely to aid in a more comprehensive understanding of the invention, and the invention is not limited to the above embodiments. A person skilled in the art to which the invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the invention. Accordingly, the concept of the present invention should not be limited to the described embodiments, and all technical concepts that are equivalent to or have equivalent variations to the claims set forth below, as well as the claims themselves, should be interpreted as being included within the scope of the rights of the present invention. Explanation of the symbols

[0077] substrate (10) Insulating plate (110) Information Hall (111) Guide Euro (115) Base body (120) Fuzzy Euro (125) shaft (130) through hole (135)

Claims

Claim 1 An insulating plate having an embedded electrode and for accommodating a substrate on its upper surface; a base body bonded to the insulating plate and having a purge channel; and a hollow shaft bonded to the base body and having one or more through holes in its sidewalls communicating with the purge channel, wherein the insulating plate includes a guide channel communicating with the purge channel, the guide channel extending to the upper surface of the insulating plate and including a guide hole formed at its end, and a channel parallel to the upper surface of the insulating plate extending from outside the guide hole in the radial direction toward the guide hole, and a plurality of guide holes arranged along the edge of the insulating plate. Claim 2 delete Claim 3 A susceptor according to claim 1, wherein the guide hole is configured to be formed between the side of the substrate and the insulating plate at the edge of the insulating plate when the substrate is received, and the guide channel is configured such that purge gas flows through the guide channel from the outer side far from the center in the diameter direction of the insulating plate toward the inner side and comes out into the guide hole. Claim 4 delete Claim 5 In paragraph 3, the direction flowing from the outer side to the inner side of the insulating plate is a susceptor formed through a flow path parallel to the upper surface of the insulating plate. Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 A susceptor according to claim 1, wherein the insulating plate comprises a first layer formed such that the guide channel is positioned outwardly from the edge of the substrate, and a second layer formed such that the centerline of the extension direction of the guide channel, which extends from the first layer to the guide hole, is oriented parallel to the upper surface of the insulating plate.

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