Shielded probe station for evaluating beta thin-film sources and beta absorption semiconductor and method for evaluating beta thin-film sources using the same

Abstract

The present invention discloses a shielded probe station for evaluating a beta thin film source, comprising: a shielding box formed of a metal material to block external light and electromagnetic waves and having an internal housing; a vacuum stage provided in the housing and configured to vacuum adsorb and fix a semiconductor structure on its upper surface; a vacuum adsorber configured to vacuum adsorb and fix a beta thin film source at a predetermined spacing above the semiconductor structure; a first XYZ stage provided in the housing and configured to move the vacuum adsorber along the X, Y, and Z axes; a probe unit having at least one pair of probes connected to the electrodes of the semiconductor structure to measure a microcurrent caused by the beta thin film source; and a second XYZ stage provided in the housing and configured to move each of the probes along the X, Y, and Z axes, wherein the shielding box is configured to completely shield the housing in a setup completed state in which the beta thin film source is positioned above the semiconductor structure and the probe unit is connected to the electrodes of the semiconductor structure.

Description

Technology Field

[0001] The present invention relates to a probe station capable of shielding against external light and electromagnetic waves, comprising a main configuration for evaluating a beta thin-film source and a beta absorption semiconductor, and an evaluation method using the same. Background Technology

[0002] Active research is underway to utilize beta thin-film sources and absorption semiconductors in combination, such as betavoltaic cells, beta decay-based random number generators, and semiconductor detectors, for applications in space, polar, and deep-sea environments. A betavoltaic cell is a device that converts electron-hole pairs, generated when beta particles emitted from beta-emitting radionuclides (beta thin-film sources) are absorbed by a semiconductor, into electric current. To achieve this, high-efficiency semiconductor components such as PIN diodes, Si, SiC, and GaN are combined with the beta thin-film source. Random number generators produce random numbers by measuring particle radiation emitted from the thin-film source using a semiconductor detector.

[0003] In the aforementioned fields, accurate performance evaluation of thin-film source emission characteristics and absorption semiconductors is required. The performance of absorption semiconductors can be evaluated when using standard sources, and the emission characteristics of beta thin-film sources can be evaluated when using standard semiconductor detectors.

[0004] Conventionally, in order to evaluate the characteristics of a beta thin-film source and an absorption semiconductor, a method has been utilized in which a beta thin-film source is placed on a semiconductor device as shown in FIG. 1, and then the current-voltage characteristics between the anode and the cathode are analyzed using a probe station and a source measurement unit (SMU).

[0005] This evaluation method has the advantage of allowing for the relatively simple setup of a measurement environment using general-purpose measuring equipment and the rapid identification of the device's basic electrical characteristics through intuitive probing; however, it has several technical limitations. For instance, the current generated by beta rays is at a very minute level (pA to nA) compared to photocurrents in solar cells, and thus reacts sensitively to interference from ambient light sources or external electromagnetic waves during the measurement process. However, since conventional probe stations primarily feature an open structure, photoelectric effects caused by external light sources act as noise, degrading the accuracy of microcurrent measurements.

[0006] Furthermore, when a beta thin-film source made of metal comes into direct contact with the surface of a semiconductor device, there is a high risk of short circuits occurring between potentials within the device or between electrode grids. This not only deforms circuit characteristics but also hinders precise data acquisition; however, conventional equipment lacks a dedicated structure capable of precisely controlling or maintaining minute clearances between the source and the device.

[0007] Furthermore, conventional methods involve constructing an entire darkroom or using large shielding boxes for shielding; however, this presents a problem where work efficiency drops sharply due to the difficulty in securing visibility for sample positioning or probing. In particular, even minute light entering through microscope observation ports functions as noise, limiting the ability to ensure the reproducibility of measurement data.

[0008] Accordingly, there is a need to develop a shielded probe station for evaluating beta thin-film sources that fundamentally prevents electrical short circuits between various semiconductor dies (structures) and beta thin-film sources, completely blocks external light sources and electromagnetic waves to enable high-precision microcurrent measurement, and ensures precise sample control and operational convenience. The problem to be solved

[0009] The first objective of the present invention is to provide a shielded probe station for evaluating beta thin-film sources that can effectively block noise caused by external light and electromagnetic waves when measuring microcurrents generated from beta thin-film sources.

[0010] The second objective of the present invention is to provide a shielded probe station for evaluating a beta thin film source that has a structure that allows for easy visibility while precisely controlling the position and clearance between the beta thin film source and the semiconductor structure in three axial directions.

[0011] The third objective of the present invention is to provide a shielded probe station for evaluating beta thin-film sources in which key components, such as a shielding box and a probe unit, are efficiently arranged to maintain shielding performance and precisely measure microcurrents.

[0012] The fourth objective of the present invention is to provide a method for precisely evaluating a beta thin-film source by utilizing the shielded probe station for evaluating the beta thin-film source. means of solving the problem

[0013] To achieve the first to third objectives of the present invention, the present invention comprises: a shielding box formed of a metal material to block external light and electromagnetic waves and having an internal receiving portion; a vacuum stage provided in the receiving portion and configured to vacuum adsorb and fix a semiconductor structure on its upper surface; a vacuum adsorber configured to vacuum adsorb and fix a beta thin film source at a predetermined spacing above the semiconductor structure; a first XYZ stage provided in the receiving portion and configured to move the vacuum adsorber along the X, Y, and Z axes; and a probe unit having at least one pair of probes connected to the electrodes of the semiconductor structure to measure a microcurrent generated by the beta thin film source. A shielded probe station for evaluating a beta thin film source is disclosed, comprising a second XYZ stage provided in the receiving portion and formed to move each of the probes along the X, Y, and Z three axes, wherein the shielding box is configured to completely shield the receiving portion in a setup completed state in which the beta thin film source is positioned on the upper side of the semiconductor structure and the probe unit is connected to the electrode of the semiconductor structure.

[0014] According to one example related to the present invention, the probe unit may be configured to measure IV characteristics for evaluating the beta voltaic effect generated by the beta thin film source.

[0015] According to one example related to the present invention, the shielding box may include a knob operation hole corresponding to a knob for axis adjustment of the first XYZ stage and the second XYZ stage; and a plug disposed to cover the knob operation hole.

[0016] According to one example related to the present invention, the shielding box may further include: a box body formed with an upper opening and having the receiving portion inside and having the knob operating hole on the side; and a box cover hinged to the box body and formed to open and close the upper opening of the box body.

[0017] According to one example related to the present invention, the present invention may further include: an upright microscope provided on the upper part of the shielding box and formed to enable observation of the position of the beta thin film source on the semiconductor structure and the contact state between the semiconductor structure and the probe unit; and a horizontal microscope provided on the side of the shielding box and formed to enable observation of the vertical separation distance between the semiconductor structure and the beta thin film source.

[0018] According to one example related to the present invention, the probe unit includes two probes connected to the anode and cathode electrodes of the semiconductor structure, respectively, and the second XYZ stage may be positioned at 90 degrees on each side of the first XYZ stage in correspondence with the two probes.

[0019] According to one example related to the present invention, the horizontal microscope may be positioned to face the first XYZ stage with the vacuum stage in between.

[0020] According to one example related to the present invention, the upright microscope and the horizontal microscope are equipped with an iris shutter, and in the completed setup state, the iris shutter can be closed to block the entry of light.

[0021] According to one example related to the present invention, the shielding box is provided with an upper port for installing the upright microscope, and a ring light configured to illuminate the vacuum stage may be installed inside the upper port.

[0022] According to one example related to the present invention, the ring light may be set to turn off before the microcurrent measurement of the probe unit in the setup completed state.

[0023] The first to third objectives of the present invention may also be achieved by a probe station system for evaluating a beta thin film source, comprising: a shielded probe station for evaluating the beta thin film source; a vacuum pump connected to the vacuum stage and the vacuum adsorber, respectively; and a control unit connected to the probe unit to control the measurement of the microcurrent.

[0024] To achieve the fourth objective of the present invention, the present invention discloses a method for evaluating a beta thin film source using a shielded probe station for evaluating a beta thin film source of one example comprising the iris shutter, the plug, and the ring illumination.

[0025] According to one example related to the present invention, the evaluation method may include: a step of turning on the ring light; an adjustment step of setting the position of the beta thin film source on the semiconductor structure, the contact state between the semiconductor structure and the probe unit, and the vertical separation distance between the semiconductor structure and the beta thin film source; a shielding step of blocking external light sources and electromagnetic waves by turning off the ring light, installing the plug, and driving the iris shutter after the setup is completed; a measurement step of measuring a microcurrent by the beta thin film source through the probe unit; and an evaluation step of evaluating beta voltaic performance by calculating the beta emission rate from the measurement data of the microcurrent. Effects of the invention

[0026] The effects of the present invention obtained through the above-described solution are as follows.

[0027] First, the shielded probe station for evaluating beta thin-film sources according to the present invention can effectively block external light and electromagnetic noise through a shielding structure in which a metal shielding box, a plug, and an iris shutter of a microscope unit are combined. Through this, ultra-microcurrents (pA to nA) generated by the interaction between the beta thin-film source and the semiconductor structure can be precisely measured without noise interference, thereby improving the data accuracy and reliability of the evaluation of beta thin-film sources and beta voltaic devices.

[0028] Second, through a 3-axis control and multi-angle observation structure utilizing a vacuum stage and vacuum suction fixation method, multiple XYZ stages, and a microscope unit, the horizontal position (overlap state) and vertical separation distance between the beta thin-film source and the semiconductor structure can be precisely controlled. In particular, controlling the vertical separation distance using a horizontal microscope fundamentally prevents electrical short circuits between the metal source and the device electrode, thereby reducing the risk of device damage and ensuring consistent reproducibility even during repeated measurements. Furthermore, by minimizing vibrations or displacements that may occur during fixation, experiment preparation time is shortened and operational efficiency is maximized. In addition, the knob operation holes and internal ring lighting of the shielding box provide both visibility and convenience during the setup process, effectively resolving the difficulties in position adjustment experienced in conventional darkrooms or large shielding facilities.

[0029] Third, by utilizing the proposed beta thin-film source evaluation method, the entire process from sample setup to complete shielding and measurement can be standardized. This can be used to select precise performance evaluation indicators in the development of beta-voltaic batteries based on various next-generation semiconductor materials such as Si, SiC, and GaN, and can contribute to accelerating commercialization in related research fields. Brief explanation of the drawing

[0030] FIG. 1 is a conceptual diagram showing a probe station-based beta-voltage measuring device according to the prior art. FIG. 2 is a perspective view of a shielded probe station (10) for evaluating a beta thin film source according to one embodiment of the present invention. FIG. 3 is an exploded perspective view of the shielded probe station (10) for evaluating a beta thin film source shown in FIG. 2. FIG. 4 is a plan view with the upright microscope (610), upper port (130), and box cover (120) omitted to show the internal structure of the shielded probe station (10) for evaluating a beta thin film source shown in FIG. 2. FIG. 5 is a partial perspective view showing the coupling structure between the upright microscope (610) and the upper port (130) shown in FIG. 2. FIG. 6 is a diagram illustrating the field of view observed through the upright microscope (610) and the horizontal microscope (620) shown in FIG. 2, where FIG. 6(A) shows the field of view observed by the horizontal microscope (620) and FIG. 6(B) shows the field of view observed by the upright microscope (610). FIG. 7 is a configuration diagram of a beta thin film source evaluation probe station system (20) including a beta thin film source evaluation probe station (10) according to one embodiment of the present invention. FIG. 8 is a flowchart showing a step-by-step method for evaluating a beta thin film source using a shielded probe station (10) for evaluating a beta thin film source according to one embodiment of the present invention. Specific details for implementing the invention

[0031] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings; however, in describing the embodiments disclosed in this specification, if it is determined that a detailed description of related known technology may obscure the essence of the embodiments disclosed in this specification, such detailed description will be omitted.

[0032] The suffixes "module" and "part" used for components in the following description are assigned or used interchangeably solely for the ease of drafting the specification, and do not inherently possess distinct meanings or roles.

[0033] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another.

[0034] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0035] A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0036] In this application, terms such as “comprising” or “having” are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0037] In this specification, identical or similar reference numbers are assigned to identical or similar components even in different embodiments, and redundant descriptions thereof are omitted.

[0038] The attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings; it should be understood that all modifications, equivalents, and substitutions included within the concept and technical scope of the present invention are included.

[0039] FIG. 2 is a perspective view of a shielded probe station (10) for evaluating a beta thin film source according to one embodiment of the present invention, and FIG. 3 is an exploded perspective view of the shielded probe station (10) for evaluating a beta thin film source shown in FIG. 2. FIG. 4 is a plan view with the upright microscope (610), upper port (130), and box cover (120) omitted to show the internal structure of the shielded probe station (10) for evaluating a beta thin film source shown in FIG. 2.

[0040] Referring to FIGS. 2 to 4, the shielded probe station (10) for evaluating a beta thin film source according to the present invention includes a shielding box (100), a vacuum stage (200) and a vacuum adsorber (300), first and second XYZ stages (510, 520a, 520b), and a probe unit (400).

[0041] The shielding box (100) is formed of a metal material to block external light and electromagnetic waves and is provided with a receiving portion (111) to accommodate the components to be described later. At this time, the shielding box (100) may be formed of a metal material including at least one of aluminum (Al), stainless steel (SUS), copper (Cu), silver (Ag), mu-metal, and alloys thereof, and a conductive coating layer may be additionally formed on the surface to maximize external noise blocking performance. The material of the shielding box (100) may be selected as a material optimized for a specific measurement environment by comprehensively considering the required processability, electrical conductivity, and electromagnetic shielding efficiency.

[0042] Specifically, the shielding box (100) may include a box body (110) and a box cover (120). The box body (110) may be formed in the shape of a housing with an open top and may have a receiving portion (111) inside. The box cover (120) may be hinge-connected to the box body (110) and formed to selectively open and close the upper opening of the box body (110).

[0043] In this embodiment, the box cover (120) is shown as having a structure that pivots by being hinged to the box body (110), but the present invention is not limited thereto. A guide rail may be provided on one side of the upper part of the box body (110) to have a structure in which the box cover (120) slides open and closed in one direction, or the box cover (120) may be formed as a detachable structure that can be completely separated from the box body (110).

[0044] In addition, in this embodiment, the box cover (120) is shown as being composed of a left box cover (120a) and a right box cover (120b) that open and close in different directions, but the present invention is not limited thereto. The box cover may also be formed such that the left and right box covers are manufactured as a single unit and are pivotally opened and closed in only one direction, either up and down or left and right, by means of a hinge provided on one edge of the upper part of the box body (110).

[0045] In addition, as shown in FIG. 2, a holder may be provided on the upper surface of the box cover (120) to facilitate manual opening and closing by the user. When the box cover (120) is formed separately into left and right box covers (120a, 120b), it is preferable that the holder be individually placed on the upper surface of each cover.

[0046] Meanwhile, a vacuum stage (200) is provided in the receiving portion (111), and a semiconductor structure (SC) is fixed by vacuum adsorption on the upper surface of the vacuum stage (200). In addition, a vacuum adsorber (300) is disposed on the upper side of the semiconductor structure (SC) to fix a beta thin film source (BF) by vacuum adsorption at a predetermined spacing. That is, the vacuum adsorber (300) places the beta thin film source (BF) at an overlapping spacing relative to the semiconductor structure (SC).

[0047] At this time, it is preferable that the vertical spacing between the semiconductor structure (SC) and the beta thin film source (BF) be set within a range of 0.1 mm or more and less than 1 mm. If the spacing is less than 0.1 mm, not only is visual observation and precise manipulation through the horizontal microscope (620) described later difficult, but the risk of electrical short circuits occurring increases rapidly depending on the surface roughness or shape of the semiconductor structure (SC). Conversely, if the spacing is 1 mm or more, energy attenuation and scattering may occur due to collisions between air molecules and beta particles introduced into the space between the semiconductor structure (SC) and the beta thin film source (BF), which may cause errors in the final measurement data.

[0048] Additionally, a vacuum path for transmitting vacuum pressure may be formed inside the vacuum stage (200) and the vacuum adsorber (300), and this may be connected via a vacuum pump (P) and a vacuum line (PL) that may be provided outside the shielding box (100). At this time, as shown in FIG. 4, the vacuum line (PL) may be drawn out to the outside by penetrating the side of the shielding box (100). Specifically, a first vacuum line (PL-1) connected to the vacuum adsorber (300) may be arranged to pass through the front side of the shielding box (100), and a second vacuum line (PL-2) connected to the vacuum stage (200) may be arranged to pass through the rear side of the shielding box (100). In this way, by dispersing the vacuum lines (PL) in different directions, it is possible to prevent multiple vacuum lines (PL) from interfering with the first and second XYZ stages (510, 520a, 520b) and the probe unit (400) within the narrow space of the receiving section (111). However, the present invention is not limited to this arrangement configuration. The first and second vacuum lines (PL-1, PL-2) can be connected to the vacuum pump (P) by passing through the shielding box (100) via an optimized path according to the arrangement design of the internal components.

[0049] Additionally, a plurality of adsorption holes (not shown) may be arranged in a concentric or grid shape on the upper surface of the vacuum stage (200) so as to universally and stably adsorb and fix semiconductor structures (SC) of various specifications. The plurality of adsorption holes can provide uniform adsorption force regardless of the size of the semiconductor structure (SC), ranging from small dies to large-area wafer pieces, and can effectively prevent movement of the semiconductor structure (SC) that may occur during fixation.

[0050] Meanwhile, the probe unit (400) is connected to the electrode of the semiconductor structure (SC) to measure a microcurrent caused by a beta thin film source (BF) and is equipped with at least one pair of probes (410a, 410b). Specifically, the probe unit (400) may be connected to an external control unit (C) to measure IV characteristics for quantitatively evaluating the beta voltaic effect generated by the beta thin film source (BF).

[0051] At this time, the connection between the probe unit (400) and the electrode of the semiconductor structure (SC) may include both direct and indirect connection methods. For example, the probe unit (400) may include two probes (410a, 410b) that are respectively connected to the anode and cathode electrodes of the semiconductor structure (SC), thereby enabling a direct connection method in which the probes (410a, 410b) conduct directly onto the electrode formed on the semiconductor structure (SC). For another example, the probe unit (400) may include a first probe (410a or 410b) that contacts the anode of the semiconductor structure (SC) and a second probe (410a or 410b) that contacts the upper surface of the vacuum stage (200) that is in contact with the lower surface of the semiconductor structure (SC). In this case, since the vacuum stage (200) is formed of a conductive material, an indirect connection method can be implemented to form an electrical loop with the semiconductor structure (SC) through the vacuum stage (200).

[0052] Additionally, the probes (410a, 410b) provided in the probe unit (400) preferably have their ends formed in a needle shape for precise connection with the microelectrode formed in the semiconductor structure (SC), and can be connected to an external control unit (C) via a triaxial cable or a shield cable to prevent loss of the measurement signal and additionally block external noise.

[0053] Meanwhile, the vacuum suction device (300) is moved along the X, Y, and Z axes by the first XYZ stage (510) provided in the receiving section (111), and each probe (410a, 410b) of the probe unit (400) is also moved along the X, Y, and Z axes by the second XYZ stage (520a, 520b) provided in the receiving section (111). That is, the vacuum suction device (300) and each probe (410a, 410b) are configured to enable mutually independent 3-axis drive control.

[0054] When two probes (410a, 410b) are provided in the probe unit (400), the second XYZ stage (520a, 520b) may be positioned at 90 degrees on each side of the first XYZ stage (510) corresponding to the two probes (410a, 410b). In other words, the second XYZ stage (520a, 520b) corresponding to each probe (410a, 410b) may be positioned to face each other on the same axis with the vacuum stage (200) in between, and the first XYZ stage (510) may be positioned in a direction perpendicular to the axis formed by the second XYZ stage (520a, 520b). This minimizes physical interference between the beta thin film source (BF) and the probes (410a, 410b) within the limited space inside the shielding box (100) and maximizes the degree of freedom of measurement.

[0055] Referring to FIGS. 3 and 4, the first and second XYZ stages (510, 520a, 520b) may include an XYZ stage housing, a holder formed protruding from the XYZ stage housing to fix a vacuum suction device (300) or a probe (410a, 410b), and a knob (511, 521a, 521b) provided on the outer surface of the XYZ stage housing to finely adjust the holder in a preset axial direction. In this embodiment, the knobs (511, 521a, 521b) are shown as controlling movement in the X-axis and Y-axis directions, respectively, and are configured with first and second knobs (511-x, 521a-x, 521b-x, 511-y, 521a-y, 521b-y) provided on the rear side of the XYZ stage housing, and a third knob (511-z, 521a-z, 521b-z) provided on the upper surface of the XYZ stage housing to control movement in the Z-axis direction, but the present invention is not limited thereto. The first to third knobs (511, 521a, 521b) may be formed with different axial directions, or with the first to third knobs (511, 521a, 521b) arranged in a line on the same side of the housing for ease of operation, or with a micrometer head applied instead of the knobs (511, 521a, 521b).

[0056] Additionally, in order to allow a user to easily operate the knobs (511, 521a, 521b) from outside the shielding box (100), knob operation holes (112a, 112b, 112c) corresponding to the knobs (511, 521a, 521b) of the first and second XYZ stages (510, 520a, 520b) may be formed on the side of the shielding box (100). That is, knob operation holes (112a, 112b, 112c) may be provided on the side of the box body (110).

[0057] In this case, to prevent external light and electromagnetic waves from entering through the knob operation holes (112a, 112b, 112c), the shielding box (100) may include plugs (113a, 113b, 113c) arranged to cover the knob operation holes (112a, 112b, 112c). At this time, the plugs (113a, 113b, 113c) may be formed in a shape corresponding to the knob operation holes (112a, 112b, 112c) to seal the knob operation holes (112a, 112b, 112c). Although the plugs (113a, 113b, 113c) of this embodiment are shown as being detachable from the box body (110), the present invention is not limited thereto. An additional anti-loss structure may be formed on the box body (110) and plugs (113a, 113b, 113c). For example, one side of the plugs (113a, 113b, 113c) may be hinged to the box body (110) to open and close by pivoting, or the plugs (113a, 113b, 113c) and the box body (110) may be connected by a connecting line made of a soft material, thereby improving work convenience.

[0058] FIG. 5 is a partial perspective view showing the combined structure between the upright microscope (610) and the upper port (130) shown in FIG. 2. Additionally, FIG. 6 is a drawing illustrating the field of view observed through the upright microscope (610) and the horizontal microscope (620) shown in FIG. 2, where FIG. 6(A) shows the field of view observed by the horizontal microscope (620) and FIG. 6(B) shows the field of view observed by the upright microscope (610).

[0059] Referring to FIG. 5 together with FIG. 2 above, the shielded probe station (10) for evaluating a beta thin film source of the present invention may further be equipped with a microscope unit (600) for observing the setting state inside the receiving portion (111) from multiple angles, and the microscope unit (600) may include an upright microscope (610) and a horizontal microscope (620).

[0060] An upright microscope (610) may be provided on the upper part of a shielding box (100), and the shielding box (100) may be provided with an upper port (130) for installing the upright microscope (610). By fixing the upright microscope (610) to the upper port (130), a preset optical axis can be maintained consistently regardless of whether the box cover (120) is opened or closed. A horizontal microscope (620) may be provided on the side of the shielding box (100), and the horizontal microscope (620) may be positioned to face the first XYZ stage (510) with the vacuum stage (200) in between.

[0061] Specifically, the upright microscope (610) and the horizontal microscope (620) may include a lens (611, 621), a lens body (612, 622), and an iris shutter (613, 623). The lens (611, 621) is located outside the shielding box (100), and the lens body (612, 622) may be formed to extend from the outer circumference of the lens (611, 621) to the shielding box (100). The iris shutter (613, 623) is attached to the lower part of the lens body (612, 622) to connect the lens body (612, 622) and the box body (110), and can be closed to block light entry when the setup is complete.

[0062] A ring light (131) configured to illuminate the vacuum stage (200) may be installed on the inner side of the upper port (130). The ring light (131) may be formed to extend in a ring shape along the outer circumference of the opening of the upper port (130) to provide uniform illumination on the upper surface of the vacuum stage (200). The ring light (131) may be turned on and off by a ring light power supply (132) provided in the upper port (130), and it is preferable that it be set to OFF to remove external light noise before measuring the microcurrent of the probe unit (400) in the completed setup state.

[0063] As illustrated in FIG. 6(A), the horizontal microscope (620) can be configured to allow observation of the vertical separation distance between the semiconductor structure (SC) and the beta thin film source (BF). The user can check whether the vertical separation distance is within a critical range (0.1 mm or more and less than 1 mm) through the horizontal microscope (620). By driving the first XYZ stage (510) while checking the beta thin film source (BF) with the horizontal microscope (620), the user can precisely correct the Z-axis height of the beta thin film source (BF). At this time, a scale for measuring the vertical separation distance may be displayed on the lens (621) of the horizontal microscope (620), and the critical range may be highlighted in a separate color or number on the scale to enhance ease of operation. By driving the first XYZ stage (510) by referring to the scale, the user can more precisely correct the Z-axis height of the beta thin film source (BF).

[0064] As illustrated in FIG. 6(B), the upright microscope (610) can be formed to observe the horizontal position of the beta thin film source (BF) on the semiconductor structure (SC) and the contact state between the semiconductor structure (SC) and the probe unit (400). The user can determine through the upright microscope (610) whether the beta thin film source (BF) is properly overlapped within the effective area of ​​the semiconductor structure (SC) and can align the beta thin film source (BF) by moving it along the XY axis using the first XYZ stage (510). Additionally, the user can check the end positions of the probes (410a, 410b) through the upright microscope (610) and operate the second XYZ stage (520a, 520b) so that each probe (410a, 410b) accurately contacts the electrode of the semiconductor structure (SC) or the upper surface of the vacuum stage (200).

[0065] By the configurations described above, when the beta thin film source (BF) is positioned on the upper side of the semiconductor structure (SC) and the probe unit (400) is connected to the electrode of the semiconductor structure (SC) and the setup is complete (hereinafter referred to as the setup complete state) is ready to measure the microcurrent from the beta thin film source (BF), the shielding box (100) is configured to completely shield the receiving portion (111). Specifically, in the setup complete state, the box cover (120) and the plugs (113a, 113b, 113c) can be configured to seal the upper opening of the box body (110) and the knob operation holes (112a, 112b, 112c), respectively. In addition, the iris shutters (613, 623) provided in the microscope unit (600) can also be switched to a closed state so that all physical openings of the shielding box (100) are blocked. Through this multi-shielding structure, external light and electromagnetic noise that may cause interference during measurement are fundamentally blocked, thereby creating an environment for measuring ultra-microcurrents in the pA range.

[0066] FIG. 7 is a configuration diagram of a beta thin film source evaluation probe station system (20) including a beta thin film source evaluation probe station (10) according to one embodiment of the present invention.

[0067] Referring to FIG. 7, the probe station system (20) for evaluating a beta thin film source of the present invention includes the above-described shielded probe station (10) for evaluating a beta thin film source, a vacuum pump (P), and a control unit (C).

[0068] A vacuum pump (P) is connected to a vacuum stage (200) and a vacuum adsorber (300), respectively, via a vacuum line (PL), and provides vacuum pressure. The first and second vacuum lines (PL-1, PL-2) may each be equipped with a valve that can be opened and closed independently. By individually controlling the vacuum adsorption force transmitted to the vacuum stage (200) and the vacuum adsorber (300), the valve can perform the function of independently fixing or releasing the semiconductor structure (SC) and the beta thin film source (BF) at a desired time.

[0069] The control unit (C) is electrically connected to the probe unit (400) to control the measurement of microcurrents and data acquisition. Specifically, the control unit (C) may include a high-precision source measurement device (SMU). A signal line connected to the probe unit (400) and extended from the probe unit (400) may be drawn out to the outside through signal connectors (420a, 420b) provided on the side of the shielding box (100) and connected to the control unit. The signal connectors (420a, 420b) may be placed at an optimized position corresponding to the placement and movement radius of the probe unit (400). In this embodiment, the signal connectors (420a, 420b) are respectively shown placed on both sides of the shielding box (100), but the present invention is not limited thereto. To manage multiple signal lines in an integrated manner, they may be concentrated on one side of the upper surface or side of the shielding box (100), or may be positioned as far as possible from the penetration point of the vacuum line (PL) to minimize the ingress of external noise.

[0070] FIG. 8 is a flowchart showing a step-by-step method for evaluating a beta thin film source using a shielded probe station (10) for evaluating a beta thin film source according to one embodiment of the present invention.

[0071] Referring to FIG. 8, the beta thin film source evaluation method of the present invention may include five main steps (steps A to E). At this time, the evaluation method may utilize a shielded probe station (10) for evaluating a beta thin film source equipped with the shielding box (100) described above, a vacuum stage (200) and a vacuum suction device (300), first and second XYZ stages (510, 520a, 520b), a probe unit (400), a microscope unit (600), an iris shutter (613, 623), plugs (113a, 113b, 113c), and a ring light (131).

[0072] The first step is to turn on the ring light (131) to ensure internal visibility. In this step, after the semiconductor structure (SC) and the beta thin film source (BF) are adsorbed and fixed to the vacuum stage (200) and vacuum suction device (300) inside the shielding box (100), an optimal illumination environment can be created so that the interior can be observed through the microscope unit (600).

[0073] The second step is an adjustment step for setup. By individually operating the first and second XYZ stages (510, 520a, 520b) while the user checks the observation field of the microscope unit (600), the position of the beta thin film source (BF) on the semiconductor structure (SC) (horizontal alignment state, overlap position), the contact state between the semiconductor structure (SC) and the probe unit (400), and the vertical separation distance between the semiconductor structure (SC) and the beta thin film source (BF) are set.

[0074] The third step is a shielding step for creating a measurement environment. In this step, the ring light (131) is turned off, and plugs (113a, 113b, 113c) can be installed in knob operation holes (112a, 112b, 112c) formed on the side of the box body (110). Additionally, external light and electromagnetic waves can be blocked by closing the iris shutters (613, 623) provided in the microscope unit (600).

[0075] The fourth step is a measurement step for acquiring an electrical signal. In this step, the user can precisely measure a microcurrent signal of pA to nA generated by the interaction between beta particles emitted from a beta thin film source (BF) and a semiconductor structure (SC) through a probe unit (400) within a completely shielded receiving portion (111).

[0076] The fifth step is the evaluation stage, which processes the measurement data. In this stage, short-circuit current, open-circuit voltage, maximum output, and charge rate can be calculated from the IV characteristic data obtained in the measurement stage. Based on this, the beta-voltage performance of the semiconductor structure (SC) can be evaluated by deriving the power conversion efficiency relative to the energy release rate (beta release rate) of beta particles. In particular, the calculated power conversion efficiency can be analyzed by comparing it with reference data and utilized as an indicator for optimizing the radiation intensity of the beta thin-film source (BF) and for structural improvement of the semiconductor structure (SC). Explanation of the symbols

[0077] 10: Shielded probe station for evaluating beta thin-film sources 20: Probe station system for evaluating beta thin film sources SC: Semiconductor structure BF: Beta thin film source 100: Shielding box 110: Box body 111: Reception Department 112a, 112b, 112c: Knob operation holes 113a, 113b, 113c: Plug 120: Box cover 120a, 120b: Left box cover, Right box cover 130: Upper port 131: Ring light 132: Ring light power supply 200: Vacuum stage 300: Vacuum suction device 400: Probe Unit 410a, 410b: Probes (1st probe, 2nd probe) 420a, 420b: Signal connectors 510: 1st XYZ Stage 520a, 520b: 2nd XYZ Stage 511, 521a, 521b: Knob 511-x, 521a-x, 521b-x: 1st knob 511-y, 521a-y, 521b-y: 2nd knob 511-z, 521a-z, 521b-z: 3rd knob 600: Microscope unit 610: Upright microscope 620: Horizontal microscope 611, 621: Lens 612, 622: Lens body 613, 623: Iris shutter P: Vacuum pump PL: Vacuum line PL-1, PL-2: First vacuum line, second vacuum line C: Control Unit

Claims

Claim 1 A shielded probe station for evaluating a beta thin film source, comprising: a shielding box formed of a metal material to block external light and electromagnetic waves and having an internal receiving portion; a vacuum stage provided in the receiving portion and configured to vacuum adsorb and fix a semiconductor structure on its upper surface; a vacuum adsorber configured to vacuum adsorb and fix a beta thin film source at a predetermined spacing above the semiconductor structure; a first XYZ stage provided in the receiving portion and configured to move the vacuum adsorber along the X, Y, and Z axes; a probe unit having at least one pair of probes connected to the electrodes of the semiconductor structure to measure a microcurrent caused by the beta thin film source; and a second XYZ stage provided in the receiving portion and configured to move each of the probes along the X, Y, and Z axes, wherein the shielding box is configured to completely shield the receiving portion in a setup completed state in which the beta thin film source is positioned above the semiconductor structure and the probe unit is connected to the electrodes of the semiconductor structure. Claim 2 A shielded probe station for evaluating a beta thin film source, characterized in that, in claim 1, the probe unit is formed to measure IV characteristics for evaluating the beta voltaic effect generated by the beta thin film source. Claim 3 A shielded probe station for evaluating a beta thin-film source, characterized in that, in claim 1, the shielding box comprises: a knob operation hole corresponding to a knob for axis adjustment of the first XYZ stage and the second XYZ stage; and a plug disposed to cover the knob operation hole. Claim 4 A shielded probe station for evaluating a beta thin-film source, characterized in that, in paragraph 3, the shielding box further comprises: a box body formed with an upper opening and having the receiving portion inside and having the knob operating hole on the side; and a box cover hinged to the box body and formed to open and close the upper opening of the box body. Claim 5 A shielded probe station for evaluating a beta thin film source according to claim 3, further comprising: an upright microscope provided on the upper part of the shielding box and formed to enable observation of the position of the beta thin film source on the semiconductor structure and the contact state between the semiconductor structure and the probe unit; and a horizontal microscope provided on the side of the shielding box and formed to enable observation of the vertical separation distance between the semiconductor structure and the beta thin film source. Claim 6 A shielded probe station for evaluating a beta thin-film source, characterized in that, in claim 5, the probe unit includes two probes each connected to the anode and cathode electrodes of the semiconductor structure, and the second XYZ stage is positioned on both sides of the first XYZ stage at 90 degrees to correspond to the two probes. Claim 7 A shielded probe station for evaluating a beta thin-film source, characterized in that, in claim 6, the horizontal microscope is positioned to face the first XYZ stage with the vacuum stage in between. Claim 8 A shielded probe station for evaluating a beta thin-film source, characterized in that, in claim 5, the upright microscope and the horizontal microscope are equipped with an iris shutter, and in the completed setup state, the iris shutter is closed to block the inflow of light. Claim 9 A shielded probe station for evaluating a beta thin film source, characterized in that, in claim 8, the shielding box is provided with an upper port for installing the upright microscope, and a ring light is installed inside the upper port to illuminate the vacuum stage. Claim 10 A shielded probe station for evaluating a beta thin-film source, characterized in that, in claim 9, the ring illumination is set to turn OFF before measuring the microcurrent of the probe unit in the setup completed state. Claim 11 A beta thin film source evaluation probe station system comprising: a shielded probe station for evaluating a beta thin film source according to any one of claims 1 to 10; a vacuum pump connected to the vacuum stage and the vacuum adsorber, respectively; and a control unit connected to the probe unit to control the measurement of the microcurrent. Claim 12 A method for evaluating a beta thin film source using a shielded probe station for evaluating a beta thin film source according to any one of claims 9 to 10. Claim 13 In claim 12, the evaluation method comprises: a step of turning on the ring light; an adjustment step of setting the position of the beta thin film source on the semiconductor structure, the contact state between the semiconductor structure and the probe unit, and the vertical separation distance between the semiconductor structure and the beta thin film source; a shielding step of blocking external light sources and electromagnetic waves by turning off the ring light, installing the plug, and driving the iris shutter after the setup is complete; a measurement step of measuring a microcurrent by the beta thin film source through the probe unit; and an evaluation step of evaluating beta voltaic performance by calculating the beta emission rate from the measurement data of the microcurrent.

Images