Light Emitting Unit with Improved Heat Dissipation Properties and TOF Sensor Including the Same

Abstract

A light-emitting unit with improved heat dissipation characteristics and a TOF sensor including the same are disclosed. According to one aspect of the present embodiment, a light-emitting unit is provided, characterized by comprising a base substrate, light-emitting elements arranged in a plurality of groups on the base substrate and arranged sequentially in a predetermined form at the outermost and inner sides thereof, and an address line electrically connected to each of the light-emitting elements of each group and electrically disconnected from each other.

Description

Technology Field

[0001] The present embodiment relates to a light-emitting unit with improved heat dissipation characteristics and a TOF sensor including the same. Background Technology

[0002] The content described in this section merely provides background information regarding the present embodiment and does not constitute prior art.

[0003] A transport robot responsible for transporting goods or products of various sizes in logistics warehouses, production lines, etc., can be operated in an autonomous driving mode in which it recognizes its current location according to an autonomous driving algorithm, generates an optimized path to a target location, and is controlled to follow that path. Such a transport robot may include a Time of Flight (TOF) sensor to recognize the surrounding environment surrounding the transport robot.

[0004] The above Time of Flight (TOF) sensor is a sensor capable of detecting the time of light transmission emitted from a plurality of light-emitting elements and the time of light reception when reflected light from a surrounding object is detected by a plurality of light-receiving elements, and detecting the distance and position to a surrounding object according to the light flight distance, and may include, for example, a Light Imaging Detection and Ranging (LIDAR) sensor.

[0005] Conventional TOF sensors generate significant heat due to the light-emitting element when operating for a certain period of time. However, conventional TOF sensors have structurally faced difficulties in efficiently dissipating the heat generated by the light-emitting element. The problem to be solved

[0006] One embodiment of the present invention has an objective to provide a light-emitting unit comprising a different group of optical lenses disposed on a different group of light-emitting elements, and a TOF sensor comprising the same, so as to be able to switch on / off different groups of light-emitting elements at different times through each address line that is electrically disconnected from each other, and to shape different types of light that can provide different spot sizes and viewing distances.

[0007] One embodiment of the present invention has the objective of providing a light-emitting unit and a TOF sensor including the same that can mitigate the heat generation problem caused by different groups of light-emitting elements turning on at different times and neighboring light-emitting elements turning on simultaneously.

[0008] One embodiment of the present invention has the objective of providing a light-emitting unit comprising a plurality of light-emitting elements, wherein an ion implantation layer is formed on the light-emitting elements to block the movement of defects from defect sources such as oxide layers or etching parts, and to block the movement of defects from the defect sources to the central region of the active layer where carrier concentration and light concentration occur, while considering the number of light-emitting elements that are instantaneously turned on while arranging a plurality of light-emitting elements on a single base substrate, thereby maintaining an appropriate amount of light from each light-emitting element and preventing degradation of each light-emitting element, and to block the movement of defects from the defect sources to the central region of the active layer where carrier concentration and light concentration occur, and to provide a TOF sensor comprising the same.

[0009] In addition, one embodiment of the present invention has the objective of providing a light-emitting unit with improved heat dissipation characteristics and a TOF sensor including the same. means of solving the problem

[0010] According to one aspect of the present embodiment, a light-emitting unit is provided, characterized by comprising a base substrate, light-emitting elements arranged in a plurality of groups on the base substrate and arranged sequentially in a predetermined form at the outermost and inner sides thereof, and an address line electrically connected to each of the light-emitting elements of each group and electrically disconnected from each other.

[0011] According to one aspect of the present embodiment, the light-emitting unit is arranged in a plurality of groups and further comprises an optical lens disposed on a light-emitting element of each group.

[0012] According to one aspect of the present embodiment, the previously set shape is characterized as being rectangular.

[0013] According to one aspect of the present embodiment, the previously set shape is characterized by being a rectangular shape with one side open.

[0014] According to one aspect of the present embodiment, a group of light-emitting elements that must irradiate light with the highest power output is arranged at the outermost edge.

[0015] According to one aspect of the present embodiment, the group of light-emitting elements is characterized by being arranged inwardly from therein in order of relatively weaker output.

[0016] According to one aspect of the present embodiment, the light-emitting unit further comprises a switch for switching an alternative connection with the driving power source between the address line of each group and the driving power source.

[0017] According to one aspect of the present embodiment, a TOF sensor is provided comprising an array of light-emitting elements including a light-emitting unit, a light-receiving unit for receiving reflected light reflected from an object, and a processing unit for calculating a light flight time corresponding to the time difference between the time of light transmission and the time of light reception detected by the light-receiving unit from the time of light transmission from the light-emitting unit and the time of light reception where the reflected light is detected by the light-receiving unit, and calculating the distance to the object therefrom. The light-emitting unit comprises a base substrate, light-emitting elements arranged in a plurality of groups on the base substrate and arranged sequentially in a predetermined form at the outermost and inner sides thereof, and an address line electrically connected to each of the light-emitting elements of each group and electrically disconnected from each other.

[0018] According to one aspect of the present embodiment, the previously set shape is characterized as being a rectangular shape or a square shape with one side open.

[0019] According to one aspect of the present embodiment, a group of light-emitting elements that must irradiate light with the highest power output is arranged at the outermost edge. Effects of the invention

[0020] As described above, according to one aspect of the present embodiment, different groups of light-emitting elements can be switched on / off at different times through each address line that is electrically disconnected from each other, and there is an advantage of being able to provide different spot sizes and viewing distances.

[0021] According to one aspect of the present embodiment, there is an advantage in that the heat generation problem caused by neighboring light-emitting elements being turned on simultaneously can be mitigated as different groups of light-emitting elements are turned on at different times.

[0022] According to one aspect of the present embodiment, while arranging a plurality of light-emitting elements on a single base substrate, and considering the number of light-emitting elements that are instantaneously turned on, there is an advantage of being able to block the movement of defects from defect sources, such as oxide layers or etching areas, and block the movement of defects from defect sources to the central region of the active layer where carrier concentration and light concentration occur, so as to maintain an appropriate amount of light from each light-emitting element and prevent degradation of each light-emitting element.

[0023] In addition, according to one aspect of the present embodiment, there is an advantage of improving heat dissipation characteristics. Brief explanation of the drawing

[0024] FIG. 1 illustrates a light-emitting element array (EA) in which a plurality of light-emitting elements are arranged in two dimensions in one embodiment of the present invention. FIG. 2 shows a schematic diagram of a plurality of light-emitting elements (E) arranged in one dimension along one direction by taking the line II-II of FIG. 1. Figure 3 shows a three-dimensional view of the light-emitting element (E) illustrated in Figure 2. FIG. 4 shows a cross-sectional structure of a light-emitting element (E) according to one embodiment of the present invention. FIGS. 5 to 7 are drawings for explaining the light-emitting element (E) shown in FIG. 4, and drawings showing the cross-sectional structure of the light-emitting element (E) in different phases in which the light-emitting element (E) shown in FIG. 4 is formed. FIG. 8 shows a cross-sectional structure of a light-emitting element (E) according to another embodiment of the present invention. FIGS. 9 to 11 show cross-sectional structures of a light-emitting element (E) in different phases in which the light-emitting element (E) illustrated in FIG. 8 is formed. FIG. 12 shows a schematic diagram of the structure of a TOF sensor (TOF) having a light-emitting unit (EU) including a plurality of light-emitting elements (E) and a light-receiving unit (DU) including a plurality of light-receiving elements. FIG. 13 illustrates a cross-sectional structure of a light-emitting unit (EU) including an optical lens array (FA) disposed on a light-emitting element array (EA) in one embodiment of the present invention. FIG. 14 illustrates an exemplary diagram showing different spot sizes (different radiation angles) and shapes of light providing a field of view emitted from the light-emitting unit (EU) shown in FIG. 13. FIG. 15 illustrates a diagram showing the form in which light providing different spot sizes (different radiation angles) and fields of view is instantaneously emitted in phases driven sequentially from a first group of light-emitting element assemblies (ES1) to a fourth group of light-emitting element assemblies (ES4) in the light-emitting unit (EU) illustrated in FIG. 13, for example, phases driven at different times T1, T2, T3, and T4. FIG. 16 shows a contrasting diagram illustrating different spot sizes (different radiation angles) and light shapes providing a field of view emitted from each of the first to fourth groups of light-emitting element assemblies (ES1, ES2, ES3, ES4) in the light-emitting unit (EU) illustrated in FIG. 13. FIG. 17 illustrates a configuration for detecting distant objects, including a configuration that increases light intensity with the same spot size and a configuration that reduces the spot size of the light. Figure 18 illustrates a diagram for explaining a configuration that increases sensitivity with the same light intensity. FIGS. 19 to 24 illustrate an address structure of a light-emitting unit (EU) having a different address structure for applying a driving power supply (V) independently to each of the light-emitting element assemblies (ES1, ES2, ES3, ES4) of each of the first to fourth groups. FIG. 25 illustrates a diagram for explaining an embodiment in which a switching operation is implemented by interposing between a driving power source (V) and first to fourth contacts (CP1, CP2, CP3, CP4) connected to each of the first to fourth address lines (A1, A2, A3, A4) of the first to fourth groups. FIG. 26 illustrates a cross-sectional structure of a light-emitting unit (EU) comprising an optical lens array (FA) disposed on a light-emitting element array (EA) in another embodiment of the present invention. FIG. 27 illustrates an exemplary diagram showing different spot sizes (radiation angles) and shapes of light providing a field of view emitted from the light-emitting unit (EU) shown in FIG. 25. FIG. 28 illustrates a diagram showing different forms of light emitted from the light-emitting unit (EU) shown in FIG. 26. FIG. 29 illustrates an exemplary form in which light providing different spot sizes (radiation angles) and viewing angles is instantaneously emitted in phases driven sequentially from a first group of light-emitting element assemblies (ES1) to a fourth group of light-emitting element assemblies (ES4) in the light-emitting unit (EU) illustrated in FIG. 26. FIG. 30 illustrates a cross-sectional structure of a light-emitting unit (EU) comprising a first condensing lens (L1) supported on a light-emitting element (E) and a second condensing lens (L2) spaced apart from the light-emitting element (E), in another embodiment of the present invention. FIGS. 31 to 33 illustrate exemplary drawings showing different forms of light provided from a light-emitting unit (EU) according to different first to third positions (g1, g2, g3) of a second condensing lens (L2) relative to a first condensing lens (L1) in the light-emitting unit (EU) illustrated in FIG. 30. FIGS. 34 to 37 illustrate a diagram showing the shape of light deflected to different degrees from the center of the first condensing lens (L1) toward the center of the second condensing lens (L2) through different curvatures or refractive powers or different optical arrangements of the first and second condensing lenses (L1, L2) in the light-emitting unit (EU) illustrated in FIG. 30. FIGS. 38a to 38c illustrate a technical effect for mitigating the degradation of a light-emitting element (E) in a light-emitting element array (EA) or a light-emitting unit (EU) including a light-emitting element array (EA) according to an embodiment of the present invention. Specific details for implementing the invention

[0025] The present invention is susceptible to various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention. Similar reference numerals have been used for similar components in the description of each drawing.

[0026] Terms such as first, second, A, B, etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0027] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0028] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" should be understood as not precluding the existence or addition of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification.

[0029] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this invention pertains.

[0030] Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0031] In addition, each component, process, procedure, or method included in each embodiment of the present invention may be shared within a scope that is not technically contradictory to one another.

[0032] FIG. 1 illustrates a light-emitting element array (EA) in which a plurality of light-emitting elements (E) are arranged in two dimensions in one embodiment of the present invention. FIG. 2 illustrates a schematic diagram showing an array of a plurality of light-emitting elements (E) arranged in one dimension along a direction taken along line II-II of FIG. 1. FIG. 3 illustrates a three-dimensional view of the light-emitting elements (E) shown in FIG. 2. FIG. 4 illustrates a cross-sectional structure of a light-emitting element (E) according to one embodiment of the present invention. FIG. 5 to 7 illustrate diagrams for explaining the light-emitting element (E) shown in FIG. 4, showing cross-sectional structures of the light-emitting element (E) in different phases in which the light-emitting element (E) shown in FIG. 4 is formed.

[0033] Referring to the drawings, a light-emitting element (E) according to one embodiment of the present invention may include a VCSEL (Vertical Cavity Surface Emitting Laser), and a light-emitting element array (EA) according to one embodiment of the present invention may include a VCSEL array.

[0034] The above-described light-emitting element array (EA) may include a plurality of light-emitting elements (E) arranged in a two-dimensional array on a single base substrate (S). For example, in one embodiment of the present invention, the light-emitting element (E) including the VCSEL emits a Gaussian beam that is close to circular light compared to an EEL (Edge Emitting Laser), so it may be relatively easy to shape the shape of the light. As described below, in one embodiment of the present invention, an optical lens (F) is placed on the light-emitting element (E) so that the light emitted from the light-emitting element (E) can be shaped into light that provides an appropriate spot size (e.g., radiation angle) and an appropriate field of view.

[0035] The light-emitting element (E) is a laser device comprising an optically active semiconductor layer (e.g., active layer AR) interposed between a pair of mirror stacks (highly reflective mirror stacks, a P-type DBR layer, a p-DBR layer, and an N-type DBR layer, an n-DBR layer), wherein the mirror stacks (P-type DBR layer (p-DBR) and N-type DBR layer (n-DBR)) may comprise a metallic material, a dielectric material, or an epitaxially grown semiconductor layer, and the optically active semiconductor layer (e.g., active layer AR) may comprise AlInGaAs or InGaAsP. In one embodiment of the present invention, one of a pair of mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) is configured to reflect relatively less than the other, so that coherent light collected in a resonant cavity formed between the pair of mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) and including an active layer (AR) can be emitted as laser light. In one embodiment of the present invention, a light-emitting element (E) can emit laser light with relatively little beam divergence from the upper or lower surface of the resonant cavity (including the active layer AR), and the light-emitting element (E) can be arranged in one dimension or two dimensions on a base substrate (S).For example, the light-emitting element (E) may be formed as a different type of gain-guided light-emitting element or an index-guided light-emitting element. For example, the index-guided light-emitting element may be an oxide light-emitting element and may include an oxide layer (first oxide layer, O1) for concentrating both carriers and light. Through the oxide layer (first oxide layer, O1) surrounding the oxide opening (OP), an electrical resistance distribution and a refractive index distribution may be formed along the transverse direction for carrier confinement and optical confinement. Carrier confinement and optical confinement along the transverse direction in this way can increase the density of carriers and photons within the active layer (AR) and, consequently, enable the efficient generation of laser light within the active layer (AR). In this embodiment, the concentration region where carrier concentration and light concentration occur can be limited to the central region of the light-emitting element (E) along the transverse direction, and the oxide aperture (OP) can limit the current path through which carriers move. In various embodiments of the present invention, the oxide layer (first oxide layer, O1) can be formed as part of a Distributed Bragg Reflection (DBR) that provides a mirror stack (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR).

[0036] In one embodiment of the present invention, each of the pair of mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) is formed in a structure in which layers with different refractive indices are alternately stacked to form a Distributed Bragg Reflector (DBR) designed for a preferred operating laser wavelength, for example, a wavelength in the range of 650 nm to 1650 nm. For example, each of the pair of mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) may be formed by alternately stacking layers composed of high-ratio aluminum-containing AlGaAs and low-ratio aluminum-containing AlGaAs. For example, in one embodiment of the present invention, the mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) may have an effective optical thickness of approximately 1 / 4 of the operating laser wavelength, wherein the effective optical thickness may correspond to a value obtained by multiplying the thickness of the corresponding layer by the refractive index of the corresponding layer. In various embodiments of the present invention, the pair of mirror stacks (P-type DBR layer, p-DBR and N-type DBR layer, n-DBR) may be designed so that laser light is emitted from the upper surface of the light-emitting element (E) or so that laser light is emitted from the bottom surface of the light-emitting element (E).

[0037] In various embodiments of the present invention, the light-emitting element array (EA) may include a plurality of light-emitting elements (E) arranged in one or two dimensions along a base substrate (S), and the base substrate (S) may be made of GaAs, InP, sapphire (Al2O3), or InGaAs, and may be undoped, n-type doped (e.g., doped with silicon Si), or p-type doped (e.g., doped with zinc Zn).

[0038] In one embodiment of the present invention, the light-emitting element array (EA) may include a plurality of light-emitting elements (E) having oxide apertures (OP, oxidation aperture) of substantially the same size formed along the transverse direction. In one embodiment of the present invention, the oxide aperture (OP, oxidation aperture) is formed as a result of a chemical reaction between the AlGaAs material and the AlGaAs material as H2O molecules undergo a diffusion process within the AlGaAs layer while the AlGaAs layer is exposed to a high-temperature mixed gas atmosphere of N2 and H2O (water vapor) X : It can be formed by an oxidation process that transforms it into an As form, and the processing conditions such as the Al content of the AlGaAs layer, the H2O (water vapor) content, and the temperature of the reaction chamber can be changed through the conditions of this oxidation process, and by controlling the conditions of this oxidation process, the shape and size of the oxide opening (OP) in the transverse direction can be controlled.

[0039] A specific embodiment of the present invention is described as follows. That is, the light-emitting element (E) may include a base substrate (S) having first and second surfaces opposite to each other, an N-type DBR (Distributed Bragg Reflector) layer (n-DBR) formed on the first surface (upper surface) of the base substrate (S), an active layer (AR) and a P-type DBR layer (p-DBR) sequentially formed on the N-type DBR layer (n-DBR), a first electrode contact layer (M1) electrically connected to the P-type DBR layer (p-DBR), and a second electrode contact layer (M2) formed on the second surface (lower surface) of the base substrate (S).

[0040] More specifically, an N-type DBR layer (n-DBR) may be formed on a first surface (upper surface) of the base substrate (S). In one embodiment of the present invention, the N-type DBR layer (n-DBR) may be formed by alternately forming a pair of AlGaAs layers having different compositions, or by forming a structure in which a GaAs layer and an AlGaAs layer are alternately stacked. In one embodiment of the present invention, the N-type DBR layer (n-DBR) may include a pair of AlGaAs layers alternately stacked, and one of the pair of AlGaAs layers may have a relatively higher aluminum (Al) composition than the other, for example, the pair of AlGaAs layers may be Al 0.92 Ga 0.08 As layer and Al 0.16 Ga 0.84 It may include an As layer. The N-type DBR layer (n-DBR) can be doped as n-type by including silicon (Si) as an impurity.

[0041] The above N-type DBR layer (n-DBR) can perform an internal reflection function below the active layer (AR) and can also supply n-type carriers to the active layer (AR). An active layer (AR) and a P-type DBR layer (p-DBR) can be formed on the above N-type DBR layer (n-DBR).

[0042] The active layer (AR) may comprise AlInGaAs (i.e., AlInGaAs, GaAs, AlGaAs, and InGaAs), InGaAsP (i.e., InGaAsP, GaAs, InGaAs, GaAsP, and GaP), GaAsSb (i.e., GaAsSb, GaAs, and GaSb), InGaAsN (i.e., InGaAsN, GaAs, InGaAs, GaAsN, and GaN), or AlInGaAsP (i.e., AlInGaAsP, AlInGaAs, AlGaAs, InGaAs, InGaAsP, GaAs, InGaAs, GaAsP, and GaP), or alternatively, a quantum well layer composition may be used. In various embodiments of the present invention, the active layer (AR) may include one or more quantum well layers and a barrier layer, wherein the quantum well layer may include any one of GaAs, AlGaAs, AlGaAsSb, InAlGaAs, AlInGaP, GaAsP, or InGaAsP, and the barrier layer may include any one of AlGaAs, InAlGaAs, InAlGaAsP, AlGaAsSb, GaAsP, GaInP, AlInGaP, or InGaAsP.

[0043] A P-type DBR layer (p-DBR) may be formed on the active layer (AR). The P-type DBR layer (p-DBR) may be formed in a structure in which a pair of AlGaAs layers of different compositions are alternately stacked, or in which GaAs layers and AlGaAs layers are alternately stacked. In one embodiment of the present invention, the P-type DBR layer (p-DBR) may include a pair of AlGaAs layers alternately stacked, and one of the pair of AlGaAs layers may have a relatively higher aluminum (Al) composition than the other, for example, the pair of AlGaAs layers may be Al 0.92 Ga 0.08 As layer and Al 0.16 Ga 0.84It may include an As layer. In one embodiment of the present invention, the p-type DBR layer (p-DBR) may be doped to the p-type by including carbon (C) or zinc (Zn) as an impurity.

[0044] A first oxide layer (O1) defining an oxidation aperture (OP) may be formed within the above-mentioned P-type DBR layer (p-DBR). In one embodiment of the present invention, the first oxide layer (O1) may be formed on the base substrate (S) at a position adjacent to the active layer (AR) along the stacking direction in which the N-type DBR layer (n-DBR), the active layer (AR), and the P-type DBR layer (p-DBR) are stacked. Here, the fact that the first oxide layer (O1) is formed at a position adjacent to the active layer (AR) may mean that the first oxide layer (O1) is formed at a position relatively closer to the active layer (AR) within the total height of the P-type DBR layer (p-DBR) along the stacking direction. For example, the first oxide layer (O1) may be formed at a position closer to the lower surface of the P-type DBR layer (p-DBR) among the upper surface of the P-type DBR layer (p-DBR) adjacent to the first electrode contact layer (M1) and the lower surface of the P-type DBR layer (p-DBR) adjacent to the active layer (AR).

[0045] The first oxide layer (O1) can concentrate carriers in the lateral direction, and such carrier confinement can be achieved by the first oxide layer (O1) formed with a relatively high electrical resistance to restrict the movement of carriers, and the first oxide layer (O1) can surround the oxide opening (OP) and allow carriers to preferentially move through the oxide opening (OP). For example, a distribution of electrical resistance and refractive index can be formed along the lateral direction through the first oxide layer (O1) surrounding the oxide opening (OP), and the density of carriers and photons within the active layer (AR) can be increased through carrier confinement and optical confinement, and consequently, laser light can be efficiently generated within the active layer (AR).

[0046] In one embodiment of the present invention, the first oxide layer (O1) surrounding the oxide aperture (OP) is formed such that, as the AlGaAs layer is exposed to a high-temperature mixed gas atmosphere of N2 and H2O (water vapor), H2O (water vapor) molecules undergo a diffusion process within the AlGaAs layer, and as a result of a chemical reaction with the AlGaAs material, the AlGaAs material becomes AlO X : It can be formed by an oxidation process that transforms it into an As form, and the processing conditions such as the Al content of the AlGaAs layer, the H2O (water vapor) content, and the temperature of the reaction chamber can be changed through the conditions of this oxidation process, and by controlling the conditions of this oxidation process, the shape and size of the oxide opening (OP) in the transverse direction can be controlled.

[0047] In one embodiment of the present invention, in the oxidation process, in addition to the first oxide layer (O1) surrounding the oxide aperture (OP, oxidation aperture), a second oxide layer (O2) inside the P-type DBR layer (p-DBR) may be formed. For example, in one embodiment of the present invention, a second oxide layer (O2) may be formed in a P-type DBR layer (p-DBR) in which a relatively high-ratio aluminum-containing AlGaAs layer and a relatively low-ratio aluminum-containing AlGaAs layer are alternately stacked, and the oxide layer having different oxidation distances (d2, d3) alternately along the stacking direction. For example, in one embodiment of the present invention, the oxidation distance (d1, d2, d3) may mean a distance extended toward the central region of the light-emitting element (E) from an etching portion (ET) formed on an exposed area or an exposed side of the light-emitting element (E), as described below. For example, the oxidation distance (d2) of the high-ratio aluminum-containing AlGaAs layer may be extended further inward toward the central region of the light-emitting element (E) than the oxidation distance (d3) of the low-ratio aluminum-containing AlGaAs layer.

[0048] Although not illustrated in the drawings, in one embodiment of the present invention, the first oxide layer (O1) surrounding the oxide opening (OP) forms a plurality of holes (not shown) that expose the region of the first oxide layer (O1) within the P-type DBR layer (p-DBR). At this time, heated steam penetrates through the side of the exposed holes (not shown) and oxidizes toward the oxide opening (OP), thereby forming the first oxide layer (O1) surrounding the oxide opening (OP). At this time, the holes for exposing the side can be formed up to the depth of the region of the first oxide layer (O1) of the P-type DBR layer (p-DBR). When the light-emitting element (E) is exposed to heated steam during the oxidation process, the heated steam enters the holes and diffuses radially from the holes (not shown), and through the diffusion of heated steam from each hole, the oxidation interfaces merge with each other and the oxidation treatment can continue until the oxide opening (OP) is formed.

[0049] In one embodiment of the present invention, the light-emitting element (E) may include an ion implantation layer (P) for blocking defect migration within the light-emitting element (E). More specifically, the formation or migration of defects within the light-emitting element (E) may increase optical absorption in the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR), or degrade electro-optic properties in the active layer (AR). In one embodiment of the present invention, defects or defect sources that may cause performance degradation of the light-emitting element (E) may include an oxide layer (second oxide layer, O2) of the light-emitting element (E) and an etched portion (ET) formed in the exposed region of the light-emitting element (E). For example, the above oxide layer (second oxide layer, O2) is formed when the AlGaAs layer is exposed to a high-temperature mixed gas atmosphere of N2 and H2O (water vapor), and as H2O (water vapor) molecules undergo a diffusion process within the AlGaAs layer, the AlGaAs material becomes AlO X A compressive strain field can be formed as compressive deformation is induced by volume reduction caused by deformation into the :As shape.

[0050] In one embodiment of the present invention illustrated in FIG. 4, the light-emitting element (E) may be formed in a double-sided contact form in which different first and second electrode contact layers (M1, M2) are formed from the first and second sides of the base substrate (S), respectively. For example, the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR) adjacent to the P-type DBR layer (p-DBR) may be etched down so as to be stepped with the base substrate (S) or the N-type DBR layer (n-DBR) formed on the first side of the base substrate (S) (e.g., the etching area, ETA, illustrated in FIG. 5). At this time, the side of the P-type DBR layer (p-DBR) may correspond to an etched portion (ET) formed in an exposed area as a defect or defect source of the light-emitting element (E). As illustrated in FIG. 8, a light-emitting element (E) according to another embodiment of the present invention may be formed in a front contact form in which different first and second electrode contact layers (M1, M2) are both formed from the first surface (upper surface) side of the base substrate (S), and the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR) may both be etched down to form a stepped structure from the base substrate (S) (e.g., the etching area ETA shown in FIG. 9), and the sides of the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR) may correspond to an etched portion (ET) formed in an exposed area as a defect or defect source of the light-emitting element (E). In this embodiment, the first and second electrode contact layers (M1, M2) connected to the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR), respectively, can be formed on the first surface (upper surface) of the base substrate (S) on the P-type DBR layer (p-DBR) and the base substrate (S), respectively.

[0051] For example, the etching portion (ET) may include lattice defects of the crystal lattice or defects induced by the residual film after etching. For example, the etching portion (ET) may include line defects such as dislocations or point defects such as vacancies as lattice defects, and may include defects induced by the residual film after etching.

[0052] For example, an oxide layer (second oxide layer, O2) or an etching portion (ET) as a defect or defect source that causes performance degradation of the light-emitting element (E) can induce deformation or stress within the structure of the light-emitting element (E), and such defects can cause defect migration toward the active layer (AR) during operation of the light-emitting element (E).

[0053] In one embodiment of the present invention, an ion implantation layer (P) may be formed to insulate or non-conduct the defect or defect source in order to block defect migration. In one embodiment of the present invention, the ion implantation layer (P) may be formed through ion implantation in which a mask (not shown) having an opening pattern is placed and an ion beam containing ion species is accelerated and projected onto an area corresponding to the opening pattern of the mask (not shown), and the injection depth (PD) of the ion species or the depth (PD) of the ion implantation layer (P) may be controlled according to the weight of the ion species being implanted or the amount of energy accelerating the ion beam. In one embodiment of the present invention, in the ion implantation for forming the ion implantation layer (P), H + ,O + ,N + ,F + Ion species such as protons (H) can be applied.+ ) can be applied.

[0054] The above ion implantation can induce lattice defects, such as vacancies, within the ion implantation layer (P) through ion implantation, thereby insulating or non-conducting the ion implantation layer (P). Accordingly, the movement of current or carriers toward defect sources, such as the oxide layer (second oxide layer, O2) and the etching portion (ET), which are covered by the ion implantation layer (P), can be suppressed, and defect movement from defect sources such as the oxide layer (second oxide layer, O2) and the etching portion (ET) can be suppressed.

[0055] In one embodiment of the present invention, in the ion implantation, the implantation depth (PD) or the depth (PD) of the ion implantation layer (P) into which ion species are implanted can be set to at least the lower region of the active layer (AR) beyond the depth of the active layer (AR), and the implantation width into which ion species are implanted along the transverse direction, or the width of the opening pattern into which ion species are implanted through the mask, or the width of the ion implantation layer (P) can be formed wider than the oxidation distance (d2, d3, oxidation distance d2, d3 of the second oxide layer O2, for example, the relatively longer oxidation distance d2, d3 among the different oxidation distances d2, d3 of the second oxide layer O2) of the P-type DBR layer (p-DBR), and narrower than the first electrode contact layer (M1) formed on the P-type DBR layer (p-DBR). In other words, the implantation width or the width of the ion implantation layer (P) into which the above ion species are implanted can be formed with a sufficiently wide width that covers the entire oxidation distance (d2, d3, the relatively longer oxidation distance d2, d3 among the different oxidation distances d2, d3 of the second oxide layer O2) of the P-type DBR layer (p-DBR), and can be formed with a sufficiently narrow width that covers only a part of the first electrode contact layer (M1) to allow ohmic contact of the first electrode contact layer (M1). In one embodiment of the present invention, the width of the ion implantation layer (P) may be formed with a sufficiently narrow width so as to cover only the edge region of the first oxide layer (O1) surrounding the oxide opening (OP) in the central region and not cover the central region of the first oxide layer (O1) adjacent to the oxide opening (OP) (since the oxide opening OP in the central region is a region for carrier concentration), and may be formed with a sufficiently wide width so as to cover the entire etching portion (ET) and the second oxide layer (O2) formed in the edge region.For example, the ion implantation layer (P) may be formed in the edge region of the light-emitting element (E), covering the entirety of the etching portion (ET) and the second oxide layer (O2) formed in the edge region of the light-emitting element (E), and the edge region which is part of the first oxide layer (O1), but may not cover the central region of the first oxide layer (O1) surrounding the oxide opening (OP). For example, the ion implantation layer (P) may not cover the oxide opening (OP) formed in the central region of the light-emitting element (E) for carrier concentration and the central region of the first oxide layer (O1) adjacent to the oxide opening (OP).

[0056] In this way, the width of the ion implantation layer (P) or the width in which the ion species are implanted can be formed with a sufficiently narrow width that does not cover the oxide opening (OP) for carrier confinement and optical confinement, and does not cover the active layer (AR, e.g., the central region of the active layer AR) through which the density of carriers and photons is increased through the oxide opening (OP). More specifically, the width of the ion implantation layer (P) for blocking defect movement or the implantation width in which ion species are implanted can be defined as between the inner end and the outer end of the ion implantation layer (P) or implantation width along the transverse direction, wherein the inner end and the outer end of the ion implantation layer (P) or implantation width may respectively mean the inner end of the ion implantation layer (P) or implantation width that is relatively adjacent to the central region or the oxide opening (OP) formed in the central region of the light-emitting element (E), and the outer end of the ion implantation layer (P) or implantation width that is relatively far from the central region or the oxide opening (OP) formed in the central region. In one embodiment of the present invention, the ion implantation layer (P) or implantation width may be formed extending from an outer end covering an etched portion (ET) formed in an exposed area of ​​a light-emitting element (E) to an inner end between an outer end of the first electrode contact layer (M1) and an inner end of the first electrode contact layer (M1). Alternatively, the ion implantation layer (P) or implantation width may be formed to cover a portion of the first electrode contact layer (M1) along the transverse direction, but not to cover the entire first electrode contact layer (M1).In one embodiment of the present invention, the inner end of the ion implantation layer (P) or the implantation width may be formed between the inner end of the second oxide layer (O2) and the inner end of the first oxide layer (O1) (or the oxide opening OP defined by the inner end of the first oxide layer O1), and accordingly, the ion implantation layer (P) or the implantation width may be formed to cover the entire second oxide layer (O2) along the transverse direction while covering only a portion of the first oxide layer (O1). Meanwhile, in one embodiment of the present invention, the outer end of the ion implantation layer (P) or the implantation width may be formed at the end position of a P-type DBR layer (p-DBR) that is stepped inward along the transverse direction from the N-type DBR layer (n-DBR) stacked on the base substrate (S), or at the end position of an N-type DBR layer (n-DBR) adjacent to the P-type DBR layer (p-DBR).

[0057] In one embodiment of the present invention, the ion implantation layer (P) or implantation width may be formed from an outer end covering an etched portion (ET) formed in an exposed area of ​​a light-emitting element (E) to an inner end that is not close to an oxide opening (OP). The oxide opening (OP) may be formed at a position that does not overlap with the ion implantation layer (P) or implantation width so as to be completely separated from the ion implantation layer (P) or implantation width, and the oxide opening (OP) or the central region of the active layer (AR) adjacent to the oxide opening (OP) for carrier concentration and light concentration may be formed at a position that is completely separated from the ion implantation layer (P) or the central region of the active layer (AR) corresponding to the oxide opening (OP) along the transverse direction so as not to degrade the conductivity characteristics by ion implantation for forming the ion implantation layer (P) or the ion implantation layer (P).

[0058] In one embodiment of the present invention, the width of the ion implantation layer (P) or the implantation width in which ion species are implanted in the ion implantation to suppress defect migration from a defect source, such as an oxide layer (second oxide layer, O2) and an etching portion (ET), toward the active layer (AR, e.g., the central region of the active layer AR where carrier concentration and light concentration occur by an oxide opening OP), may be formed to expose the central region of the active layer (AR) while covering the edge region of the active layer (AR) adjacent to the oxide layer (second oxide layer, O2) and the etching portion (ET). For example, if defect migration occurs from a defect source, such as an oxide layer (second oxide layer, O2) and an etching portion (ET), to the central region of the active layer (AR) or to a location adjacent to the central region, the performance of the light-emitting device (E) may rapidly deteriorate, and the function of the light-emitting device (E) may be substantially lost. Accordingly, in one embodiment of the present invention, an implantation width or an ion implantation layer (P) can be formed to cover the edge region of the active layer (AR) adjacent to a defect source, such as an oxide layer (second oxide layer, O2) and an etching portion (ET), so as to block defect migration, even if the conductivity of some active layer (AR, edge region of the active layer AR) is degraded or some active layer (AR, edge region of the active layer AR) is insulated or non-conductive due to ion implantation or an ion implantation layer (P) formed from ion implantation.In one embodiment of the present invention, the depth (PD) or implantation depth (PD) of the ion implantation layer (P) can be set to a lower region of the active layer (AR), and when the depth (PD) or implantation depth (PD) of the ion implantation layer (P) is set to a depth to a lower region of the active layer (AR), the ion implantation layer (P) can cover the edge region of the light-emitting device (E) where the second oxide layer (O2) or etching portion (ET) corresponding to the defect or defect source is formed, and can also cover the edge region of the active layer (AR).

[0059] In one embodiment of the present invention, the depth (PD) of the ion implantation layer (P) or the implantation depth (PD) in which ion species are implanted in the ion implantation may refer to the depth in which the accelerated ion beam is projected, and may not include, for example, the depth to which the ion species projected into the light-emitting element (E) diffuses after projection. Similarly, the width of the ion implantation layer (P) or the implantation width in which ion species are implanted in the ion implantation may refer to the width in which the accelerated ion beam is projected into the light-emitting element through the opening pattern of the mask (not shown), and may not include, for example, the width to which the ion species projected into the light-emitting element (E) diffuses after projection.

[0060] In one embodiment of the present invention, the depth (PD) of the ion implantation layer (P) or the implantation depth (PD) at which ion species are implanted in ion implantation to block defect migration can be set to a sufficient depth extending at least to the lower region of the active layer (AR) beyond the active layer (AR). Although defects may be induced in a part of the active layer (AR) (the edge region of the active layer AR) through the ion implantation layer (P) formed to a sufficient depth extending to the lower region of the active layer (AR), defects may be induced in a part of the active layer (AR) (the edge region of the active layer AR). However, if defect migration from the oxide layer (second oxide layer, O2) and the etching portion (ET) proceeds to the active layer (AR, for example, the central region of the active layer AR where carrier concentration and light concentration occur by the oxide opening OP), the function of the light-emitting device (E) may be substantially lost due to rapid degradation of the active layer (AR). Therefore, the ion implantation layer (P) covering a part of the active layer (AR) (the edge region of the active layer AR) Even if the region) is insulated or non-conductive, in consideration of the operation of a light-emitting device (E) that is stable over time, in one embodiment of the present invention, the implantation depth (PD) of the ion implantation layer (P) or ion implantation can be set to a sufficient depth extending at least beyond the active layer (AR) to the lower region of the active layer (AR).

[0061] In a comparative example compared with the present invention, to form a first oxide layer (O1) surrounding an oxide opening (OP), a mask (not shown) having an opening pattern corresponding to the oxide opening (OP) is placed, and ion implantation (e.g., confinement implant) is performed by accelerating and projecting an ion beam containing ion species into an area corresponding to the opening pattern, thereby forming an oxide opening (OP) for carrier confinement and optical confinement. In a comparative example where ion implantation is applied to the formation of an oxide opening (OP) for carrier concentration and light concentration (formation of a first oxide layer O1 surrounding the oxide opening OP), the implantation depth (PD) at which ion species are implanted or the implantation depth (PD) at which an accelerated ion beam is projected may be limited to a depth that does not reach the active layer (AR). In contrast, in an embodiment of the present invention where ion implantation is applied to suppress defect migration from a defect source, such as an oxide layer (second oxide layer, O2) or an etching part (ET), toward the active layer (AR, the central region of the active layer AR where carrier concentration and light concentration occur), the implantation depth (PD, or the depth of the ion implantation layer P) of the ion implantation may be formed to a sufficient depth, at least to the lower region of the active layer (AR) beyond the active layer (AR).As in the comparative example above, the width of the ion species projected in the ion implantation for forming an oxide opening (OP, a first oxide layer O1 surrounding the oxide opening OP) or the width of the opening pattern of a mask (not shown) on which an ion beam containing ion species is projected can be set centered on a central region corresponding to the oxide opening (OP) formed in the central region along the transverse direction so that carrier concentration and light concentration occur. For example, as can be seen in FIG. 4, in a structure where the oxide opening (OP) is formed inside the inner end of the first electrode contact layer (M1), the location where conductivity is lost due to defects such as empty lattices induced by ion implantation in the ion implantation for forming the first oxide layer (O1) surrounding the oxide opening (OP) is the inner side of the light-emitting element (E) along the transverse direction, such as a location inside the inner end of the first electrode contact layer (M1). It may correspond to a location (the central region of the light-emitting element E). In this way, in a comparative example where the ion implantation location is set to a relatively central region, the implantation depth (PD) of the ion implantation can be set to a relatively thin depth that does not reach the active layer (AR) so that the central region of the active layer (AR), where carrier concentration and light concentration occur, is not insulated or non-conductive.

[0062] In other words, in a comparative example where ion implantation is applied to form an oxide opening (OP), the implantation depth (PD) is set to a relatively thin depth that does not reach the active layer (AR), thereby preventing the central region of the active layer (AR), where carrier concentration and light concentration occur, from becoming insulated or non-conductive due to lattice defects such as empty lattices induced by ion implantation, and accordingly, in the comparative example, the implantation depth (PD) where ion species are implanted or the implantation depth (PD) where ion species are projected can be limited to the upper region of the active layer (AR).

[0063] Unlike in such comparative examples, in one embodiment of the present invention, ion implantation is performed by setting the implantation width or the width of the ion implantation layer (P) to completely expose the central region of the active layer (AR) where carrier concentration and light concentration are achieved by the oxide opening (OP). Therefore, the central region of the active layer (AR) is not degraded from the ion implantation, and even if the implantation depth (PD) is set sufficiently deep to the lower region of the active layer (AR), the central region of the active layer (AR) may not degrade. Furthermore, the implantation depth (PD) of the ion implantation can be set sufficiently deep to the lower region of the active layer (AR) so that the edge region of the active layer (AR) adjacent to defect sources, such as the oxide layer (second oxide layer, O2) and the etching part (ET), is insulated or non-conductive due to defects (lattice defects such as empty lattices) induced by the ion implantation.

[0064] In one embodiment of the present invention, the oxide opening (OP) may be formed from a separate oxidation process preceding ion implantation for suppressing defect migration, for example, in the oxidation process for forming the oxide opening (OP), oxide layers (second oxide layers, O2) having different oxidation distances (d2, d3) alternately along the stacking direction may be formed according to the aluminum content of each layer (e.g., P-type DBR layer, sub-layer forming p-DBR) that is stacked relative to each other to form a P-type DBR layer (p-DBR). For example, in the above oxidation process, heated water vapor can diffuse into the interior of the light-emitting element (E) and react with the P-type DBR layer (p-DBR) to form a second oxide layer (O2) of the P-type DBR layer (p-DBR). Additionally, heated water vapor can diffuse radially through the exposed sides of holes (not shown) formed in the P-type DBR layer (p-DBR), and through the diffusion of heated water vapor from each hole (not shown), the oxidation interfaces merge with each other to form a first oxide layer (O1) surrounding the oxide opening (OP). In one embodiment of the present invention, the oxidation distance (d1, d2, d3) of the first and second oxide layers (O1, O2) or the diffusion distance of heated water vapor can be formed through a separate diffusion-promoting structure, such as an aluminum content of each layer forming the first and second oxide layers (O1, O2) or a hole (not shown) that promotes the diffusion of heated water vapor, so that the first and second oxide layers (O1, O2) are formed within a P-type DBR layer (p-DBR), and the first oxide layer (O1) can be formed with a relatively long first oxidation distance (d1) extending to the central region of the light-emitting element (E) to surround the oxide opening (OP), and the second oxide layer (O2) can be formed with a relatively short oxidation distance (d2) limited to the edge region of the light-emitting element (E).For example, in one embodiment of the present invention, the second oxide layer (O2) may have different second and third oxidation distances (d2, d3) along the stacking direction, and may have different second and third oxidation distances (d2, d3) depending on the aluminum content of each layer (sublayer forming P-type DBR layer, p-DBR) that is alternately stacked with respect to each other. In one embodiment of the present invention, the first to third oxidation distances (d1, d2, d3) may be measured from an edge region corresponding to an exposed area of ​​a light-emitting element (E), and the first oxidation distance (d1) of the first oxide layer (O1) surrounding the oxide opening (OP) may be formed to be the longest, and the second and third oxidation distances (d2, d3) of the second oxide layer (O2) may be formed to be shorter than the first oxidation distance (d1), and depending on the aluminum content of each layer alternately stacked, the second oxidation distance (d2) may be formed to be relatively long and the third oxidation distance (d3) may be formed to be relatively short.

[0065] In one embodiment of the present invention, the first to third oxidation distances (d1, d2, d3) of the P-type DBR layer (p-DBR) and the width of the ion implantation layer (P) for suppressing defect migration or the implantation width of the ion implantation may have the following relationship of magnitude. That is, when measured from the edge of the light-emitting element (E) forming the exposed area of ​​the light-emitting element (E), the relationship of the first to third oxidation distances (d1, d2, d3) and the implantation width from the edge toward the central area may have the relationship of first oxidation distance (d1) > width or implantation width of the ion implantation layer (P) > second oxidation distance (d2) > third oxidation distance (d3). In other words, in one embodiment of the present invention, the injection width of the ion implantation for suppressing defect migration can be formed such that the second and third oxidation distances (d2, d3) are sufficiently covered, while the first oxidation distance (d1) covers only the edge region and leaves the central region exposed without covering it.

[0066] In one embodiment of the present invention, the depth (PD) of the ion implantation layer (P) for suppressing defect migration, or the implantation depth (PD) at which ion species are implanted in the ion implantation, may be formed extending beyond the active layer (AR) to a lower region of the active layer (AR), for example, extending beyond the active layer (AR) to a part of the N-type DBR layer (n-DBR) below the active layer (AR) (the upper part of the N-type DBR layer, n-DBR). For example, in one embodiment of the present invention, the depth (PD) of the ion implantation layer (P) or the implantation depth (PD) may be set to a depth thinner than the depth of the etching down (see FIG. 5). For example, if the depth (PD) or implantation depth (PD) of the ion implantation layer (P) is formed deeper than the depth of the etching down, lattice defects such as empty lattices due to ion implantation may be induced within the N-type DBR layer (n-DBR), which is relatively far from defect sources such as the oxide layer (second oxide layer, O2) and the etching part (ET). For example, defects due to ion implantation may be unnecessarily induced in the N-type DBR layer (n-DBR), where the problem of minority carrier recombination or reduced minority carrier lifetime due to defects is relatively less severe than in the P-type DBR layer (p-DBR), where the problem of minority carrier recombination or reduced minority carrier lifetime due to defects is relatively severe. For example, in one embodiment of the present invention, the depth of the etching down may mean a depth that encompasses an N-type DBR layer (n-DBR) stacked on a base substrate (S), a P-type DBR layer (p-DBR) stepped inwardly along the transverse direction of the base substrate (S), and an N-type DBR layer (n-DBR) adjacent to the P-type DBR layer (p-DBR) and stepped inwardly together with the P-type DBR layer (p-DBR).

[0067] In one embodiment of the present invention, the injection depth (PD) at which ion species are implanted in the ion implantation can be set to a lower region of the active layer (AR), for example, to an N-type DBR layer (n-DBR) formed at the bottom of the active layer (AR), and can be set to a depth thinner than the depth of etching down of the N-type DBR layer (n-DBR) that is stepped inward together with the P-type DBR layer (p-DBR).

[0068] FIG. 8 shows a cross-sectional structure of a light-emitting element (E) according to another embodiment of the present invention. FIG. 9 to 11 show cross-sectional structures of a light-emitting element (E) in different phases in which the light-emitting element (E) shown in FIG. 8 is formed.

[0069] Referring to the drawings, a light-emitting element (E) according to another embodiment of the present invention may be formed in a front contact form in which different first and second electrode contact layers (M1, M2) are both formed from the first surface (upper surface) side of the base substrate (S), and the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR) may both be etched down so as to form a stepped structure from the base substrate (S) (see etching area ETA in FIG. 9). In this embodiment, an etching portion (ET) may be formed in the exposed area of ​​both the P-type DBR layer (p-DBR) and the N-type DBR layer (n-DBR), and a second oxide layer (O2) may be formed by alternately stacking at different oxidation distances (d2, d3) from the etching portion (ET). For example, the N-type DBR layer (n-DBR) may be formed by alternately stacking layers of high-ratio aluminum-containing AlGaAs and low-ratio aluminum-containing AlGaAs along the stacking direction, and the second oxide layer (O2) may have different oxidation distances depending on the different aluminum content. Since the N-type DBR layer (n-DBR) does not have problems such as minority carrier recombination due to defects or reduced minority carrier lifetimes as the P-type DBR layer (p-DBR) and does not significantly affect the performance degradation of the light-emitting device (E), even if an etching portion (ET) and a second oxide layer (O2) are formed in the exposed area of ​​the N-type DBR layer (n-DBR), in one embodiment of the present invention, an ion implantation layer (P) covering the etching portion (ET) and the second oxide layer (O2) of the N-type DBR layer (n-DBR) may not be formed.

[0070] Referring to FIGS. 1 to 3, in one embodiment of the present invention, the light-emitting element array (EA) may include a plurality of light-emitting elements (E) arranged in a transverse direction along a base substrate (S), and, for example, a passivation (I) including polyimide, etc. may be formed between adjacent light-emitting elements (E) along the arrangement of the light-emitting elements (E). Throughout this specification, the exposed area of ​​the light-emitting element (E) may refer to the boundary of the P-type DBR layer (p-DBR) or the N-type DBR layer (n-DBR) of the light-emitting element (E), and may include, for example, the boundary between the passivation (I) interposed between adjacent light-emitting elements (E) and the P-type DBR layer (p-DBR), and the boundary between the passivation (I) interposed between adjacent light-emitting elements (E) and the N-type DBR layer (n-DBR).

[0071] FIG. 12 shows a schematic diagram illustrating the structure of a TOF sensor (TOF) comprising a light-emitting unit (EU) including a plurality of light-emitting elements (E) and a light-receiving unit (DU) including a plurality of light-receiving elements. FIG. 13 shows a cross-sectional structure of a light-emitting unit (EU) including an optical lens array (FA) disposed on a light-emitting element array (EA) in one embodiment of the present invention. FIG. 14 shows an exemplary diagram illustrating the shape of light providing different spot sizes (different radiation angles) and fields of view emitted from the light-emitting unit (EU) shown in FIG. 13. FIG. 15 illustrates a diagram showing the form in which light providing different spot sizes (different radiation angles) and fields of view is instantaneously emitted from the light-emitting unit (EU) illustrated in FIG. 13, in a phase driven sequentially from the first group of light-emitting element assemblies (ES1) to the fourth group of light-emitting element assemblies (ES4), for example, in a phase driven at different times T1, T2, T3, and T4. FIG. 16 illustrates a diagram showing a contrasting form of light providing different spot sizes (different radiation angles) and fields of view emitted from each of the first to fourth groups of light-emitting element assemblies (ES1, ES2, ES3, ES4) from the light-emitting unit (EU) illustrated in FIG. 13. FIG. 17 illustrates a diagram explaining a configuration for detecting distant objects, a configuration for increasing light intensity with the same spot size, and a configuration for reducing the spot size of the light. Figure 18 illustrates a diagram for explaining a configuration that increases sensitivity with the same light intensity.

[0072] Referring to the drawings, in one embodiment of the present invention, a light-emitting element array (EA) or a light-emitting unit (EU) including the light-emitting element array (EA) can form a Time Of Flight (TOF) sensor (TOF) capable of detecting the time of light transmission emitted from the light-emitting element array (EA) or the light-emitting unit (EU) and the time of light reception detected by a light-receiving unit (DU) including a plurality of light-receiving elements of reflected light reflected from a surrounding object (B), and detecting the distance and position to the surrounding object (B) according to the light flight distance. For example, in one embodiment of the present invention, the TOF sensor (TOF) may include a light-receiving unit (DU) including a plurality of light-receiving elements together with the light-emitting unit (EU) including the light-emitting element array (EA). For example, a TOF sensor (TOF) according to one embodiment of the present invention may include a light-emitting unit (EU, or light-emitting element E) that emits light for a field of view around the sensor, and a light-receiving unit (DU or light-receiving element) for detecting reflected light from a surrounding object (B). It may further include a processing unit (not shown) for calculating a light flight time corresponding to the time difference between the light transmission time and the light reception time when the light reflected from the surrounding object (B) is detected by the light-receiving unit (DU), and for calculating the distance to the surrounding object (B) from the same. As described below, the light-emitting unit (EU) may include a light-emitting element array (EA) comprising a plurality of light-emitting elements (E) and an optical lens array (FA) comprising a plurality of optical lenses (F) arranged on the light-emitting element array (EA). Technical details regarding the optical lenses (F) or the optical lens array (FA) will be explained in more detail later.

[0073] In one embodiment of the present invention, the light-emitting element array (EA) may include first to fourth groups of light-emitting elements (E1, E2, E3, E4) arranged in rows, and first to fourth groups of optical lenses (F1, F2, F3, F4) for shaping light emitted from each light-emitting element (E) into different shapes may be disposed on each of the first to fourth groups of light-emitting elements (E1, E2, E3, E4). In one embodiment of the present invention, the first to fourth groups of light-emitting elements (E1, E2, E3, E4) may refer to a group of light-emitting elements (E) that share an address line (A) to be electrically connected to each other and driven together, and similarly, the first to fourth groups of optical lenses (F1, F2, F3, F4) are a group of optical lenses (F) disposed on the first to fourth groups of light-emitting elements (E1, E2, E3, E4) that share an address line (A), and the first to fourth groups of light-emitting elements (E1, E2, E3, E4) and the first to fourth groups of optical lenses (F1, F2, F3, F4) may have the same arrangement on a base substrate (S). In one embodiment of the present invention, a light-emitting element array (EA) and an optical lens array (FA) disposed on the light-emitting element array (EA) can form a light-emitting unit (EU), and each light-emitting element (E) and an optical lens (F) disposed on the light-emitting element (E) can form a light-emitting element assembly (ES). In this sense, a light-emitting unit (EU) according to one embodiment of the present invention may include light-emitting elements (E1, E2, E3, E4) of groups 1 to 4, and together with light-emitting elements (E1, E2, E3, E4) of groups 1 to 4, may include optical lenses (F1, F2, F3, F4) of groups 1 to 4, or may include light-emitting element assemblies (ES1, ES2, ES3, ES4) of groups 1 to 4, each comprising a light-emitting element (E) and an optical lens (F).

[0074] In one embodiment of the present invention, the light-emitting unit (EU) may include a first group of light-emitting element assemblies (ES1) that emit light shaped into different forms to provide different spot sizes and fields of view, a second group of light-emitting element assemblies (ES2), a third group of light-emitting element assemblies (ES3), and a fourth group of light-emitting element assemblies (ES4). In one embodiment of the present invention, the fact that the light-emitting unit (EU) includes a first group of light-emitting element assemblies (ES1), a second group of light-emitting element assemblies (ES2), a third group of light-emitting element assemblies (ES3), and a fourth group of light-emitting element assemblies (ES4) that emit light shaped into different forms may mean that different light shaped into different radiation angles is emitted to have different spot sizes at the same optical axis distance along the optical axis, or that light shaped into different spots is emitted to have different light intensities at the same optical axis distance along the optical axis.

[0075] As described below, the first group of light-emitting element assembly (ES1) may include a first group of light-emitting elements (E1) and a first group of optical lenses (F1) disposed on the optical axis of the first group of light-emitting elements (E1), and the second group of light-emitting element assembly (ES2) may include a second group of light-emitting elements (E2) and a second group of optical lenses (F2) disposed on the optical axis of the second group of light-emitting elements (E2); similarly, the third group of light-emitting element assembly (ES3) may include a third group of light-emitting elements (E3) and a third group of optical lenses (F3) disposed on the optical axis of the third group of light-emitting elements (E3); and furthermore, the fourth group of light-emitting element assembly (ES4) may include a fourth group of light-emitting elements (E4) and a fourth group of optical lenses (F4) disposed on the optical axis of the fourth group of light-emitting elements (E4).

[0076] In one embodiment of the present invention, the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups may have substantially the same structure and the same performance, and the optical lenses (F1, F2, F3, F4) of the first to fourth groups may be placed on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups having substantially the same structure and performance, so as to shape the light emitted from the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups into different shapes.

[0077] In one embodiment of the present invention, the light-emitting element assembly (ES) may include a first group of light-emitting element assemblies (ES1) intended to detect the position of a surrounding object (B) captured in a near-field view around the TOF sensor (TOF) according to the distance from the surrounding object (B) to be captured by the light-emitting unit (EU) or the TOF sensor (TOF) including the light-emitting unit (EU), and a fourth group of light-emitting element assemblies (ES4) intended to detect the position of a surrounding object (B) captured in a far-field view around the TOF sensor (TOF). In addition, depending on the distance to the surrounding object (B) to be captured by the light-emitting unit (EU) or the TOF sensor (TOF) including the light-emitting unit (EU), the second and third groups of light-emitting unit assemblies (ES2, ES3) may be further included to provide a medium-distance field of view that is longer than the near-distance field of view of the first group of light-emitting unit assemblies (ES1) and shorter than the far-distance field of view of the fourth group of light-emitting unit assemblies (ES4), for example, the field of view of the second group of light-emitting unit assemblies (ES2) is set between the near-distance and far-distance fields of the first and fourth groups of light-emitting unit assemblies (ES1, ES4), for example, the field of view of the second group of light-emitting unit assemblies (ES2) may provide a sufficiently short-distance field of view that is closer to the near-distance field of view of the first group of light-emitting unit assemblies (ES1) than to the far-distance field of view of the fourth group of light-emitting unit assemblies (ES4). And, the field of view of the third group of light-emitting element assemblies (ES3) is set between the near and far fields of view of the first and fourth groups of light-emitting element assemblies (ES1, ES4), for example, the field of view of the third group of light-emitting element assemblies (ES3) can provide a sufficiently long field of view that is closer to the far field of view of the fourth group of light-emitting element assemblies (ES4) than to the near field of view of the first group of light-emitting element assemblies (ES1).

[0078] In one embodiment of the present invention, the light-emitting element assembly (ES) may include an optical lens (F) disposed at an upper position of the light-emitting element (E) along the optical axis direction of the light-emitting element (E) or the upper surface direction of the light-emitting element (E), and the optical lens (F) may include optical lenses (F1, F2, F3, F4) of the first to fourth groups disposed on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, respectively. Here, the optical lenses (F1, F2, F3, F4) of the first to fourth groups can shape the light emitted from each of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups into different shapes. For example, the optical lens (F1) of the first group can shape the light emitted from the light-emitting element (E1) of the first group into a relatively wide spot size (e.g., the widest spot size among the optical lenses F1, F2, F3, F4 of the first to fourth groups) or into light where the light intensity is dispersed over a relatively wide spot size and limited to the shortest near-distance field of view. The optical lens (F4) of the fourth group can shape the light emitted from the light-emitting element (E4) of the fourth group into a relatively narrow spot size (e.g., the narrowest spot size among the optical lenses F1, F2, F3, F4 of the first to fourth groups) or into light where the light intensity is concentrated over a relatively narrow spot size and limited to the longest far-distance field of view. The light can be shaped into a field of view. Additionally, the optical lenses (F2, F3) of the second and third groups can shape the light emitted from the light-emitting elements (E2, E3) of the second and third groups into a spot size narrower than that of the optical lens (F1) of the first group and a spot size wider than that of the optical lens (F4) of the fourth group.More specifically, the optical lens (F2) of the second group can shape the light emitted from the light-emitting element (E2) of the second group into light with a sufficiently wide spot size closer to the spot size of the optical lens (F1) of the first group than the spot size of the optical lens (F4) of the fourth group, and the optical lens (F3) of the third group can shape the light emitted from the light-emitting element (E3) of the third group into light with a sufficiently narrow spot size closer to the spot size of the optical lens (F4) of the fourth group than the spot size of the optical lens (F1).

[0079] In one embodiment of the present invention, the spot size of the second group of optical lenses (F2) may be wider than the spot size of the third group of optical lenses (F3), and the field of view of the second group of optical lenses (F2) may be formed to be shorter than the field of view of the third group of optical lenses (F3).

[0080] In one embodiment of the present invention, the optical lenses of the first to fourth groups (F1, F2, F3, F4) can maintain sufficient light intensity even at a greater distance by gradually reducing the spot size and concentrating the light intensity at a reduced spot size as one moves from the first group of optical lenses (F1) to the fourth group of optical lenses (F4), and accordingly, can provide a field of view from near to far as one moves from the first group of optical lenses (F1) to the fourth group of optical lenses (F4). For example, the optical lenses of the first to fourth groups (F1, F2, F3, F4) can be formed so that the curvature or refractive power gradually increases as one moves from the first group of optical lenses (F1) to the fourth group of optical lenses (F4).

[0081] As illustrated in FIG. 16, the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups to which the optical lenses (F1, F2, F3, F4) of the first to fourth groups are applied can maintain sufficient light intensity even at a longer distance by gradually reducing the spot size and concentrating the light intensity at the reduced spot size as one moves from the first group of light-emitting element assembly (ES1) to the fourth group of light-emitting element assembly (ES4), and accordingly, can provide a field of view from near to far as one moves from the first group of light-emitting element assembly (ES1) to the fourth group of light-emitting element assembly (ES4).

[0082] As illustrated in FIG. 17, in order for light emitted from a light-emitting element assembly (ES) to be reflected with sufficient light intensity from a surrounding object (B) placed at a distance and detected with high sensitivity by a light receiving unit (DU), a method of increasing the light intensity as in (b) while having the same spot size as in (a) can be considered. Alternatively, a method of reducing the spot size while having the same light intensity as in (a) so that the same light intensity is concentrated into a narrow spot size and the reflected light from the surrounding object (B) at a distance is reflected with sufficient light intensity so that it can be detected with high sensitivity by a light receiving unit (DU). For example, in one embodiment of the present invention, providing a progressively longer field of view as one moves from the first group of light-emitting element assemblies (ES1) to the fourth group of light-emitting element assemblies (ES4) may be because the optical lenses (F1, F2, F3, F4) of the first to fourth groups are configured to have progressively higher curvature or progressively higher refractive power to concentrate the same light intensity into a relatively narrow spot size, as shown in (c) of FIG. 17.

[0083] Referring to FIG. 18, as in FIG. 18 (a), light with a relatively wide spot size forms a light intensity of relatively low reflected light from surrounding objects (B) at the same distance as the light intensity is dispersed over a wide spot size, whereas as in FIG. 18 (b), light with a relatively narrow spot size forms a light intensity of relatively high reflected light from surrounding objects (B) at the same distance as the light intensity is concentrated over a narrow spot size, so the light shape shown in (b) can provide relatively higher sensitivity than the light shape shown in (a).

[0084] In one embodiment of the present invention, since the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups can output substantially the same light power, the light intensity capable of recognizing an object through reflected light in a form where the light intensity is dispersed over a relatively wide spot size can be maintained only at a relatively short distance (near field of view), and conversely, the light intensity capable of recognizing an object through reflected light in a form where the light intensity is concentrated over a relatively narrow spot size can be maintained over a relatively long distance (far field of view). For example, as shown in FIGS. 17 and 18, when it is necessary to increase the light intensity of reflected light or to increase the sensitivity of light intensity for object recognition, it may be advantageous to emit light with a narrow spot size; in other words, it may be advantageous to increase the curvature or refractive power of the optical lens (F).

[0085] In one embodiment of the present invention, optical lenses (F1, F2, F3, F4) of the first to fourth groups having different optical characteristics may be applied simultaneously, and optionally, a light-emitting element assembly (ES1) of the first group to which the optical lens (F1) of the first group is applied may be operated to provide a dense field of view for the near distance around the TOF sensor (TOF) (for example, detecting external objects densely across a field of view that overlaps without gaps with spot sizes overlapping each other through the wide radiation angle of the light-emitting element assemblies ES1 of the first group arranged adjacently), or optionally, a light-emitting element assembly (ES4) of the fourth group to which the optical lens (F4) of the fourth group is applied may be operated to provide a field of view for the far distance around the TOF sensor (TOF), and optionally, a light-emitting element assembly (ES2) of the second group or a light-emitting element assembly (ES3) of the third group may be operated to provide a field of view for the intermediate distance around the TOF sensor (TOF).In one embodiment of the present invention, the fact that the first group of light-emitting element assemblies (ES1) provides a short-range field of view means that the first group of light-emitting element assemblies (ES1) must have reflections made at a short distance from the sensor to maintain sufficient light intensity for detecting reflected light while the light intensity is dispersed into a relatively wide spot size (the light intensity becomes relatively low and the detection distance of an external object becomes short), and this means that the first group of light-emitting element assemblies (ES1) provides a short-range field of view around the sensor, and the fact that the fourth group of light-emitting element assemblies (ES4) provides a long-range field of view means that even if the light intensity is concentrated into a relatively narrow spot size and reflections are made at a long distance from the sensor, the reflected light can be detected with sufficient light intensity (the light intensity becomes relatively high and the detection distance of a surrounding object B becomes long), and the fourth group of light-emitting element assemblies (ES4) provides a long-range field of view around the sensor.

[0086] FIGS. 19 to 24 illustrate an address structure of a light-emitting unit (EU) having a different address structure for applying a driving power supply (V) independently to each of the light-emitting element assemblies (ES1, ES2, ES3, ES4) of each of the first to fourth groups. FIG. 25 illustrates an embodiment in which a switching operation is implemented by interposing between the driving power supply (V) and the first to fourth contacts (CP1, CP2, CP3, CP4) connected to the address lines (A1, A2, A3, A4) of each of the first to fourth groups.

[0087] Referring to FIG. 19 and FIG. 20, in one embodiment of the present invention, the optical lenses (F1, F2, F3, F4) of the first to fourth groups or the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may have progressively changing optical characteristics, and the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups, whose optical characteristics change progressively, may be arranged sequentially along the transverse direction of the base substrate (S). As described below, the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may each be connected to the address lines (A1, A2, A3, A4) of the first to fourth groups for separately applying a driving power supply (V); for example, a switching operation may be performed to sequentially connect the address lines (A1, A2, A3, A4) of the first to fourth groups and the driving power supply (V) so that the light-emitting unit (EU) or the TOF sensor (TOF) including the light-emitting unit (EU) can sequentially change the spot size and viewing distance over time; and so that the switching operation between different address lines (A1, A2, A3, A4) of the first to fourth groups may be performed sequentially, the address lines (A1, A2, A3, A4) of the first to fourth groups or these addresses of the first to fourth groups The light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups connected to the lines (A1, A2, A3, A4) can be arranged sequentially.

[0088] As illustrated in FIGS. 19 and 20, in one embodiment of the present invention, the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups may be arranged alternately in a transverse direction along the base substrate (S), and as described below, the address lines (A1, A2, A3, A4) of the first to fourth groups connected to the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups may also be arranged alternately in a transverse direction along the base substrate (S). That is, the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups can be arranged alternately in a cyclic manner along the base substrate (S) in the order of the first group light-emitting element (E1) - the second group light-emitting element (E2) - the third group light-emitting element (E3) - the fourth group light-emitting element (E4) - the first group light-emitting element (E1), and similarly, the address lines (A1, A2, A3, A4) of the first to fourth groups can be arranged alternately in a cyclic manner in the order of the first group address line (A1) - the second group address line (A2) - the third group address line (A3) - the fourth group address line (A4) - the first group address line (A1). For example, in one embodiment of the present invention, the optical lenses (F1, F2, F3, F4) of the first to fourth groups may be formed such that the curvature or refractive power gradually increases from the optical lens of the first group (F1) to the optical lens of the fourth group (F4). For example, the optical lens of the first group (F1) may refract light emitted from the light-emitting element (E1) of the first group at a large radiation angle with a relatively low refractive power and shape it into light with a relatively large radiation angle and a wide spot size (light with the widest spot size), and the optical lens of the fourth group (F4) may refract light emitted from the light-emitting element (E4) of the fourth group at a large radiation angle with a relatively high refractive power and shape it into light with a relatively small radiation angle and a narrow spot size (light with the narrowest spot size).

[0089] In one embodiment of the present invention, different optical characteristics provided by the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may be provided by the optical lenses (F1, F2, F3, F4) of the first to fourth groups, and the optical lenses (F1, F2, F3, F4) of the first to fourth groups may shape the light from the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups into different shapes with different curvatures or refractive powers. In one embodiment of the present invention, the optical lenses (F1, F2, F3, F4) of the first to fourth groups can function as condensing lenses that concentrate light emitted in a form emitted from the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups around an optical axis, and in another embodiment of the present invention, in order to differentiate the form of light emitted from the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, an optical lens (F) may not be placed above any one of the light-emitting elements (E) of the first to fourth groups.

[0090] The light-emitting device assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups, in which optical properties change gradually, can be arranged sequentially along the transverse direction of the base substrate (S). As described below, the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may each be connected to the address lines (A1, A2, A3, A4) of the first to fourth groups for separately applying a driving power supply (V); for example, a switching operation may be performed to sequentially connect the address lines (A1, A2, A3, A4) of the first to fourth groups and the driving power supply (V) so that the light-emitting unit (EU) or the TOF sensor (TOF) including the light-emitting unit (EU) can sequentially change the spot size and viewing distance over time; and so that the switching operation between different address lines (A1, A2, A3, A4) of the first to fourth groups may be performed sequentially, the address lines (A1, A2, A3, A4) of the first to fourth groups or these addresses of the first to fourth groups The light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups connected to the lines (A1, A2, A3, A4) can be arranged sequentially.

[0091] Meanwhile, the light-emitting element assemblies of the first to third groups (ES1, ES2, ES3) or the light-emitting element assemblies of the first to fourth groups (ES1, ES2, ES3, ES4) are arranged sequentially as described above, and as shown in FIG. 21, each light-emitting element assembly (ES1 to ES3 or ES1 to ES4) may be arranged in a rectangular shape while including all the characteristics described above. Alternatively, each light-emitting element assembly (ES1 to ES3 or ES1 to ES4) may be arranged sequentially, but as shown in FIG. 22, may be arranged in a rectangular shape with one side open rather than a rectangular shape.

[0092] Meanwhile, the light-emitting element assemblies of the first to third groups (ES1, ES2, ES3) or the light-emitting element assemblies of the first to fourth groups (ES1, ES2, ES3, ES4) may include all of the aforementioned characteristics and may be arranged as shown in FIG. 23 or FIG. 24. As shown in FIG. 23, the light-emitting element assembly of the first group (ES1) may be arranged in a rectangular shape on the outermost edge or on the inner side immediately adjacent thereto, and the light-emitting element assembly of the second group (ES2) may be arranged in a rectangular shape on the inner side of the light-emitting element assembly of the first group (ES1), and the light-emitting element assembly of the third group (ES3) may be arranged in the same shape on the inner side of the light-emitting element assembly of the second group (ES2). FIG. 25 illustrates an example in which three groups are arranged, but it is not necessarily limited thereto, and the number of light-emitting element assembly groups arranged may vary depending on the case.

[0093] At this time, the first group of light-emitting element assemblies (ES1), which are arranged at the outermost relative position, are arranged such that they must emit light at the highest output, such as by irradiating the furthest distance, and are arranged inward from there in order of relatively weaker output. Inevitably, a relatively large amount of heat is emitted from light-emitting elements that emit light at the highest output. If these light-emitting elements are placed at the center of the base substrate (S), they may adversely affect other adjacent light-emitting elements or light-emitting element assemblies (in the outer direction) during the heat dissipation process, and may cause problems such as heat not being dissipated smoothly to the outside, taking a considerable amount of time to dissipate heat, or the formation of a heat dome inside. To resolve these problems, the first group of light-emitting element assemblies (ES1) are arranged at the outermost relative position. Accordingly, the heat generated while the assembly is operating can be smoothly released to the outside, and the impact on other assemblies during the release process can be minimized. In addition, considering the rate at which heat is released and the positional relationship of the assembly, heat is not released smoothly, and the occurrence of residual heat dome phenomena, particularly heat dome phenomena occurring in the center, can be minimized. Each group of light-emitting element assemblies can be connected to address lines (A1, A2, A3, A4), etc., as described above with reference to FIG. 19, etc.

[0094] Meanwhile, as illustrated in FIG. 24, the light-emitting element assemblies (ES1 to ES4) of the first to fourth groups are arranged such that the light-emitting element assembly that must irradiate light with the highest output is at the outermost edge, and the output becomes relatively weaker from therein, as illustrated in FIG. 23, and can be arranged in a rectangular shape with one side open rather than a rectangular shape. Accordingly, the light-emitting element assemblies (ES1 to ES4) of each group can be connected to address lines (A1, A2, A3, A4), etc., in a way that is easier and circuit-simplified.

[0095] FIG. 26 illustrates a cross-sectional structure of a light-emitting unit (EU) including an optical lens array (FA) disposed on a light-emitting element array (EA) in another embodiment of the present invention. FIG. 27 illustrates an exemplary shape of light providing different spot sizes (radiation angles) and fields of view emitted from the light-emitting unit (EU) shown in FIG. 26. FIG. 28 illustrates an exemplary shape of light emitted from the light-emitting unit (EU) shown in FIG. 26. FIG. 29 illustrates an exemplary shape in which light providing different spot sizes (radiation angles) and fields of view is instantaneously emitted from the light-emitting unit (EU) shown in FIG. 26 in a phase in which it is driven sequentially from a first group of light-emitting element assemblies (ES1) to a fourth group of light-emitting element assemblies (ES4).

[0096] Referring to the drawings, in another embodiment of the present invention, an optical lens (F) may not be placed on the upper portion of the first group of light-emitting elements (E1) to form a light (light with the widest spot size) in which light intensity is dispersed over a wide range with a relatively wide spot size. That is, since an optical lens (F) that collects the light emitted from the first group of light-emitting elements (E1) is not placed on the upper portion of the first group of light-emitting elements (E1), light with a relatively wide spot size can be emitted compared to the second to fourth groups of light-emitting element assemblies (ES2, ES3, ES4) in which an optical lens (F) that basically functions as a condensing lens is placed. In this way, an optical lens (F) may not be disposed on the light-emitting element (E1) of the first group, and an optical lens (F2, F3, F4) of the second to fourth group may be disposed on the light-emitting elements (E2, E3, E4) of the second to fourth groups, and the optical lens (F2, F3, F4) of the second to fourth groups may be formed in a shape in which the curvature or refractive power gradually increases.

[0097] In accordance with the present specification, the statement that the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups provide light with a progressively changing spot size does not mean, in a limited sense, that optical lenses (F1, F2, F3, F4) of the first to fourth groups are disposed on each light-emitting element (E) of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups; rather, it may encompass a structure in which an optical lens (F) is not disposed on any one of the light-emitting elements (E) among the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups. For example, an optical lens (F) may not be disposed on the first light-emitting element (E) that provides light with the widest spot size among the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and the light-emitting element assemblies (ES1, ES2, ES3, ES4) progressively spot Light with varying sizes can be provided. For example, the first group of light-emitting element assembly (ES1) may not include the first group of optical lenses (F1), and broadly, the first group of light-emitting elements (E1) or the first group of light-emitting element assembly (ES1) may be formed with substantially the same structure.As described below, in various embodiments of the present invention, the optical lens (F) disposed on the light-emitting element (E) may include first and second condensing lenses (L1, L2) disposed overlapping each other to enable optical interference with each other. In such embodiments, the first group of optical lenses (F1) may not be disposed on the first group of light-emitting elements (E1) in the same manner as the first group of optical lenses (F1) may not be disposed on the first group of light-emitting elements (E1), and the first group of optical lenses (F1) including the first and second condensing lenses (L1, L2) disposed overlapping each other may not be disposed on the first group of light-emitting elements (E1). For example, even if the first and second condensing lenses (L1, L2) disposed overlapping each other to enable optical interference with each other are disposed on the second to fourth groups of light-emitting elements (E2, E3, E4), the first and second condensing lenses (L1, L2) disposed overlapping each other may not be disposed on the first group of light-emitting elements (E1).

[0098] In one embodiment of the present invention, optical lenses of the first to fourth groups (F1, F2, F3, F4; if optical lens F1 of the first group is excluded, optical lenses F2, F3, F4 of the second to fourth groups, hereinafter the same) having a form in which curvature or refractive power gradually increases may be disposed on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and at this time, the optical lenses of the first to fourth groups (F1, F2, F3, F4) may be disposed on the upper surface of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and for example, the optical lenses of the first to fourth groups (F1, F2, F3, F4) may be supported on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups.

[0099] Meanwhile, as illustrated in FIG. 27, when varying the spot size of light output by the light-emitting element assemblies (ES1 to ES4) of the first to fourth groups or the light-emitting elements (E1 to E4) included therein, the inclusion or type of optical lenses (F1 to F4) may be different, and the radiation angle of the light-emitting elements (E1 to E4) themselves may also be additionally adjusted. For example, a light-emitting element assembly (exemplified as ES1 or ES2 in FIG. 27) that must output light with a relatively narrow radiation angle because it must irradiate light over a long distance may irradiate light such that the light-emitting element (exemplified as E1 or E2 in FIG. 27) itself has a relatively narrow radiation angle, separate from the adjustment using optical lenses. Conversely, a light-emitting device assembly (exemplified as ES3 or ES4 in FIG. 27) that must emit light with a relatively wide radiation angle because it must emit light at a short distance can emit light such that the light-emitting device (exemplified as E3 or E4 in FIG. 27) itself has a relatively wide radiation angle. Accordingly, the light-emitting device assemblies of the first to fourth groups (ES1 to ES4) can more finely adjust the radiation angle of the output light by adjusting the radiation angle of the light-emitting device (E1 to E4) itself and the curvature or refractive power of the optical lenses (F1 to F4) placed on the light path.

[0100] FIG. 30 illustrates a cross-sectional structure of a light-emitting unit (EU) comprising an overlapping arrangement of a first condensing lens (L1) supported on a light-emitting element (E) and a second condensing lens (L2) spaced apart from the light-emitting element (E), in another embodiment of the present invention. FIG. 31 to 33 illustrates exemplary drawings showing different forms of light provided from the light-emitting unit (EU) according to different first to third positions (g1, g2, g3) of the second condensing lens (L2) relative to the first condensing lens (L1) in the light-emitting unit (EU) illustrated in FIG. 30. FIGS. 34 to 37 illustrate a diagram showing the shape of light deflected to different degrees from the center of the first condensing lens (L1) toward the center of the second condensing lens (L2) through different curvatures or refractive powers or different optical arrangements of the first and second condensing lenses (L1, L2) in the light-emitting unit (EU) illustrated in FIG. 30.

[0101] Referring to the drawings, in one embodiment of the present invention, the optical lenses of the first to fourth groups (F1, F2, F3, F4; if the optical lens F1 of the first group is excluded, the optical lenses F2, F3, F4 of the second to fourth groups) may include first and second condensing lenses (L1, L2) arranged overlappingly with respect to each other so as to enable optical interference with each other. Before specifically describing this embodiment, a modified embodiment of the present invention will be described with reference to the drawings above.

[0102] That is, in a modified embodiment of the present invention, the optical lenses (F1, F2, F3, F4) of the first to fourth groups may be disposed on the optical axis of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, even if they are not supported on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and, for example, can exert appropriate refractive power for light emitted from the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups on the optical axis of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and the optical lenses (F1, F2, F3, F4; if the optical lens F1 of the first group is excluded, the optical lenses F2, F3, F4 of the second to fourth groups) may be disposed on the optical axis of each light-emitting element (E), and emit light through an appropriate support structure. It can be supported at a height spaced apart from the element (E). In various embodiments of the present invention, the optical lenses (F1, F2, F3, F4) of the first to fourth groups may be provided as an integrated optical lens array (FA) that is integrally connected to one another, and the integrated optical lens array (FA) may be formed of a light-transparent optical material. For example, as shown in FIG. 27, the integrated optical lens array (FA) may include a flat support (FS) and optical lenses of the first to fourth groups (F1, F2, F3, F4; optical lenses of the second to fourth groups F2, F3, F4 when the optical lens F1 of the first group is excluded) formed at a position corresponding to the optical axis of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups on the lower surface of the support (FS) facing the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups.In one embodiment of the present invention, the first group of optical lenses (F1) may be excluded, and the second to fourth groups of optical lenses (F2, F3, F4) may be formed in a form in which the first group of optical lenses (F1) is excluded, and the second to fourth groups of optical lenses (F2, F3, F4) may be formed in a form in which they are connected to each other through a support (FS). The first group of optical lenses (F1) may be formed in a flat form having substantially zero curvature, and the second to fourth groups of optical lenses (F2, F3, F4) may be formed in a form in which the curvature gradually increases.

[0103] As illustrated in FIG. 30, in one embodiment of the present invention, each of the optical lenses (F1, F2, F3, F4) of the first to fourth groups (or each of the optical lenses F2, F3, F4 of the second to fourth groups when the optical lens F1 of the first group is excluded) may include first and second condensing lenses (L1, L2) arranged at different heights along the optical axis of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, so as to enable optical interference with each other. For example, light emitted in a form radiated from the light-emitting element (E) may be condensed around the optical axis through the first condensing lens (L1), thereby reducing the spot size, and may be condensed once again around the optical axis through the second condensing lens (L2) arranged after the first condensing lens (L1), thereby further reducing the spot size. That is, in one embodiment of the present invention, the spot size can be sequentially reduced by overlappingly passing through first and second condensing lenses (L1, L2) formed at different heights along the optical axis, and, for example, a field of view expanded to a distant distance with a relatively reduced spot size can be provided compared to an embodiment in which only one of the first and second condensing lenses (L1, L2) is configured, for example, a first condensing lens (L1) supported on a light-emitting element (E) and a second condensing lens (L2, a second condensing lens L2 configured in the form of an integrated optical lens array FA) supported at a height spaced apart from the light-emitting element (E). For example, by overlapping the first and second focusing lenses (L1, L2), a longer field of view can be provided around the TOF sensor (TOF), and through the first and second focusing lenses (L1, L2) providing a longer field of view, the location of a surrounding object (B) placed further away from the TOF sensor (TOF) can be detected.

[0104] Referring to FIGS. 31 to 33, in one embodiment of the present invention, the first and second condensing lenses (L1, L2) can be aligned such that the optical axes of the first and second condensing lenses (L1, L2) coincide with the optical axis of the light-emitting element (E). In this way, light can be provided in a form where the optical axis position (FP) having the highest light intensity does not change through the first and second condensing lenses (L1, L2) arranged on the mutually coincident optical axes (e.g., the second position of the second condensing lens L2). For example, the optical axis position (FP2) of light passing through the first and second condensing lenses (L1, L2) sequentially may coincide with the optical axis position (FP1) of light passing through only the first condensing lens (L1) or the optical axis position (FP) of the light-emitting element (E).

[0105] In various embodiments of the present invention, the first and second condensing lenses (L1, L2) may be arranged such that their optical axes are staggered from each other (e.g., a third position g3 of the second condensing lens L2), and through the arrangement of the first and second condensing lenses (L1, L2) with staggered optical axes, a biased light may be provided such that the optical axis position (FP2) having the highest light intensity changes differently from the optical axis position of the light-emitting element (E) or the optical axis position (FP1) of the first condensing lens (L1) supported on the light-emitting element (E). For example, in one embodiment of the present invention, the optical axes of the light-emitting element (E) and the first condensing lens (L1) may be aligned with each other (a second position g2 of the second condensing lens L2), and the optical axes of the first and second condensing lenses (L1, L2) may be arranged such that they are staggered from each other (a third position of the second condensing lens L2). In such an embodiment, light is provided through first and second condensing lenses (L1, L2) with their optical axes aligned with each other, so that the optical axis position (FP1, FP2) is not changed (second position g2 of the second condensing lens L2), or biased light is provided through first and second condensing lenses (L1, L2) with their optical axes staggered relative to each other, such as light where the optical axis position (FP1, FP2) is changed, for example, light where the optical axis position (FP2) is biased toward the center of the second condensing lens (L2) while passing through the second condensing lens (L2). More specifically, the optical axis of the light emitted from the first condensing lens (L1) can be deflected toward the center of the second condensing lens (L2) while passing through the second condensing lens (L2), and the position of the optical axis (FP2) of the light emitted from the second condensing lens (L2) can be deflected toward the center of the second condensing lens (L2) with respect to the optical axis of the light-emitting element (E) or the optical axis of the first condensing lens (L1) while passing through the second condensing lens (L2).

[0106] For example, in an embodiment in which the first and second condensing lenses (L1, L2) are arranged staggeredly to provide light deflected with respect to the optical axis of the light-emitting element (E) or the optical axis of the first condensing lens (L1) supported on the light-emitting element (E) (third position g3 of the second condensing lens L2), the centers or optical centers (optical axis positions FP1, FP2) of the first and second condensing lenses (L1, L2) may be spaced apart from each other along the upper surface of the light-emitting element (E) or along a direction intersecting the optical axis, and the centers or optical centers (optical axis positions FP1, FP2) of the first and second condensing lenses (L1, L2) may have an arrangement in which they are spaced apart from each other but overlap at least partially with respect to each other. By arranging the first and second condensing lenses (L1, L2) in an alternating manner relative to each other (e.g., the third position g3 of the second condensing lens L2), optical interference between them can be formed, and by arranging the first and second condensing lenses (L1, L2), each functioning as a condensing lens, a relatively long-distance field of view can be provided while providing light deflected toward the center of the second condensing lens (L2).

[0107] In one embodiment of the present invention, the second condensing lens (L2) or the optical lens array (FA, for example, an integrated optical lens array FA in which a plurality of second condensing lenses L2 are integrally connected to each other) may be supported so as to be capable of translational movement along a direction parallel to the upper surface of the light-emitting element (E) from which light is emitted, and through the translational movement of the second condensing lens (L2) or the optical lens array (FA) in which the second condensing lens (L2) is arranged, the second condensing lens (L2) may be moved between different first to third positions (g1, g2, g3), and accordingly, the characteristics of the light emitted from the light-emitting element (E) or the TOF sensor (TOF) including the light-emitting element (E) may be changed. For example, through the translational movement of a second condensing lens (L2) or an optical lens array (FA) in which the second condensing lens (L2) is arranged between a first position to a third position (g1, g2, g3), as shown in FIG. 28, at a first position (g1) where the second condensing lens (L2) is completely separated from the first condensing lens (L1), a light with a relatively wide spot size is provided through the first condensing lens (L1). Then, as shown in FIG. 29, at a second position (g2) where the second condensing lens (L2) coincides with the optical axis of the first condensing lens (L1), that is, at a second position (g2) where the optical axes of the first and second condensing lenses (L1, L2) are aligned with each other, a light-emitting element (E) or a TOF sensor (TOF) including the light-emitting element (E) can provide light with a reduced spot size compared to the first position (g1) and can provide a more extended field of view. there is.And, as illustrated in FIG. 30, at a third position (g3) where the second condensing lens (L2) is positioned opposite to the optical axis of the first condensing lens (L1), that is, at a third position (g3) where the optical axes of the first and second condensing lenses (L1, L2) are opposite to each other, a TOF sensor (TOF) including a light-emitting element (E) or a light-emitting element (E) can provide light that is biased toward the center of the second condensing lens (L2) more than at the second position (g2). In this way, different types of light can be provided through an optical lens array (FA) in which the second condensing lens (L2) or the second condensing lens (L2) is arranged and supported to be translationally movable between different first to third positions (g1, g2, g3) along a direction parallel to the upper surface of the light-emitting element (E) from which light is emitted.

[0108] In one embodiment of the present invention, an optical lens (F) may not be disposed on the first light-emitting element (E) that provides the widest spot size, and for example, the first and second condensing lenses (L1, L2) may not be disposed on the first light-emitting element (E). In this embodiment, as shown in FIGS. 28 to 30, even if the second condensing lens (L2) or the optical lens array (FA) in which the second condensing lens (L2) is arranged is translated between the first position and the third position (g1, g2, g3), neither the first condensing lens (L1) nor the second condensing lens (L2) may be disposed on the first light-emitting element (E). However, in various embodiments of the present invention, the second condensing lens (L2) may not be placed on the first light-emitting element (E) at the first position (g1), but the second condensing lens (L2) may be placed on the first light-emitting element (E) at the second position (g2) and the third position (g3). In such embodiments, the first and second condensing lenses (L1, L2) may be placed overlappingly on the second to fourth light-emitting elements (E2, E3, E4), but only the second condensing lens (L2) is placed on the first light-emitting element (E) without the first condensing lens (L1), thereby shaping the light emitted from the first light-emitting element (E) into light with a reduced spot size (a field of view magnified to a long distance).

[0109] In one embodiment of the present invention, the optical axes of the first and second condensing lenses (L1, L2) are offset from each other (third position g3 of the second condensing lens L2), and the optical axis position (FP) of the first condensing lens (L1) or the position where the light intensity of the light passing through the first condensing lens (L1) is highest can be deflected toward the center of the second condensing lens (L2), and accordingly, the light emitted from the light-emitting element (E) or the TOF sensor (TOF) including the light-emitting element (E) can be deflected. According to one embodiment of the present invention, a TOF sensor (TOF) may be mounted on a transport robot capable of driving in an autonomous movement mode. At this time, it may be necessary to deflect the light emission direction from the TOF sensor (TOF) along the driving direction of the transport robot equipped with the TOF sensor (TOF) and according to the mounting position of the TOF sensor (TOF). For example, it may be necessary to deflect the light emission direction from the TOF sensor (TOF) in advance of the turning point or the turning point when the driving direction of the robot is to be changed, and to detect the presence of an obstacle, that is, a surrounding object (B), and the location of the surrounding object (B) along the changing direction.

[0110] As illustrated in FIGS. 34 to 37, through the staggered arrangement of the first and second condensing lenses (L1, L2) relative to each other (third position g3 of the second condensing lens L2), the optical axis of light passing through the first condensing lens (L1) can be deflected toward the center of the second condensing lens (L2), and the optical axis position (FP) or the position with the highest light intensity can be captured at a position deflected from the optical axis position (FP) of the first condensing lens (L1). For example, the degree of deviation from the optical axis position (FP2, optical axis position FP2 of light emitted from the second condensing lens L2) from the optical axis position (FP1) of the first condensing lens (L1) may vary depending on the specific design of the first and second condensing lenses (L1, L2), such as the degree to which the optical axes of the first and second condensing lenses (L1, L2) are separated from each other, or the curvature or refractive power of the first and second condensing lenses (L1, L2) (for example, the difference in curvature or refractive power of the first and second condensing lenses L1, L2). For example, FIGS. 32 to 34 show simulation results for measuring the angle at which the optical axis position (FP2, the optical axis position with the highest light intensity) of light passing through the first and second condensing lenses (L1, L2) is deflected toward the center of the second condensing lens (L2) from the optical axis position (FP1) of the first condensing lens (L1) when the centers of the first and second condensing lenses (L1, L2) are spaced 50 μm apart from each other or when the optical axes of the first and second condensing lenses (L1, L2) are spaced 50 μm apart from each other. In the simulation of FIG. 32, when the curvature of the first condensing lens (L1) is 3 and the curvature of the second condensing lens (L2) is 3, the angle at which the optical axis to the optical axis position (FP2) of the first and second condensing lenses (L1, L2) is deflected from the optical axis to the optical axis position (FP1) of the first condensing lens (L1) is 5.The angle of deviation from the optical axis to the optical axis position (FP2) of the first and second condensing lenses (L1, L2) is 1 degree, and in the simulation of FIG. 33, when the curvature of the first condensing lens (L1) is 3 and the curvature of the second condensing lens (L2) is 4, the angle of deviation from the optical axis to the optical axis position (FP1) of the first condensing lens (L1) is 6.7 degrees, and in the simulation of FIG. 34, when the curvature of the first condensing lens (L1) is 3 and the curvature of the second condensing lens (L2) is 5, the angle of deviation from the optical axis to the optical axis position (FP2) of the first and second condensing lenses (L1, L2) is 8.It was calculated as 4 degrees, and from the simulation results of FIGS. 32 to 34, it may vary depending on the degree to which the optical axes or centers of the first and second condensing lenses (L1, L2) are offset from each other (e.g., in FIGS. 35 to 37, the optical axes or centers of the first and second condensing lenses L1, L2 are offset from each other by 50 μm) and the curvature of each of the first and second condensing lenses (L1, L2) (e.g., curvatures of 3 to 5 in FIGS. 35 to 37), etc. In one embodiment of the present invention, in order to adjust the degree of deflection of the first and second condensing lenses (L1, L2), the degree to which the optical axes or centers of the first and second condensing lenses (L1, L2) are offset from each other or the curvature of each of the first and second condensing lenses (L1, L2), for example, the curvature of each of the first and second condensing lenses (L1, L2) or Depending on the degree to which the curvatures of the first and second condensing lenses (L1, L2) differ from one another, for example, when the curvatures of the first and second condensing lenses (L1, L2) are equal to 3 in the simulation result of FIG. 32, and when the curvature of the second condensing lens (L2) increases to 4 and 5 in the simulation results of FIG. 36 and FIG. 37, the angle at which the optical axis or optical axis position (FP2) of the first and second condensing lenses (L1, L2) is deflected from the optical axis or optical axis position (FP1) of the first condensing lens (L1) can gradually increase; and as the curvature of the second condensing lens (L2) increases from the deflected angle of 5.1 degrees in the simulation of FIG. 35 to the deflected angles of 6.7 degrees and 8.4 degrees in the simulations of FIG. 33 and FIG. 34, from the optical axis or optical axis position (FP1) of the first condensing lens (L1) The angle at which the optical axis or optical axis position (FP2) of the first and second condensing lenses (L1, L2) is deflected can be gradually increased.

[0111] Referring to FIGS. 19 to 26, a light-emitting unit (EU) according to one embodiment of the present invention may include an address line (A) for selectively turning ON / OFF any one of the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups, and, for example, may include address lines (A1, A2, A3, A4) of the first to fourth groups electrically connected to each of the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups to provide a driving line individually or selectively to the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups. For example, in one embodiment of the present invention, the address lines (A1, A2, A3, A4) of the first to fourth groups can form a power supply line that connects the first electrode contact layers (M1) of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups to each other. More specifically, the address line (A1) of the first group can connect the first electrode contact layers (M1) of the light-emitting elements (E1) of the first group to each other, the address line (A2) of the second group can connect the first electrode contact layers (M1) of the light-emitting elements (E2) of the second group to each other, and similarly, the address line (A3) of the third group can connect the first electrode contact layers (M1) of the light-emitting elements (E3) of the third group to each other, and the address line (A4) of the fourth group can connect the first electrode contact layers (M1) of the light-emitting elements (E4) of the fourth group to each other.

[0112] In this way, the address lines (A1, A2, A3, A4) of the first to fourth groups can be connected to the first electrode contact layer (M1) of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and the second electrode contact layer (M2) of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups can be connected to a common ground line. In one embodiment of the present invention, the first electrode contact layer (M1) of the first to fourth groups of light-emitting elements (E1, E2, E3, E4) can be connected to the address lines (A1, A2, A3, A4) of the first to fourth groups that are electrically disconnected from each other, and unlike the first electrode contact layer (M1) of the first to fourth groups of light-emitting elements (E1, E2, E3, E4), the second electrode contact layer (M2) of the first to fourth groups of light-emitting elements (E1, E2, E3, E4) can be connected to a common ground line and electrically connected to each other.

[0113] Referring to FIG. 25, in one embodiment of the present invention, the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups or the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups can be selectively ON / OFF controlled through individually formed address lines (A1, A2, A3, A4) of the first to fourth groups, that is, address lines (A1, A2, A3, A4) of the first to fourth groups that are electrically disconnected from each other so that a driving power supply (V) is applied independently of each other, and, for example, a switch (SW) may be interposed between the driving power supply (V) provided in the light-emitting unit (EU) and the address lines (A1, A2, A3, A4) of the first to fourth groups.For example, in one embodiment of the present invention, the switch (SW) may be provided as a 5-contact switch (SW) or a multiplexer that is interposed between the terminals of the driving power supply (V) and the first to fourth contacts (CP1, CP2, CP3, CP4) connected to the address lines (A1, A2, A3, A4) of the first to fourth groups, and connects one of the first to fourth contacts (CP1, CP2, CP3, CP4) and the driving power supply (V) according to a control signal; alternatively, to enable external user settings, the switch (SW) may be provided in the form of a 4-position selector switch in which the first to fourth contacts (CP1, CP2, CP3, CP4) are arranged along the circumferential direction and can be pivotably rotated along the first to fourth contacts (CP1, CP2, CP3, CP4). The switch (SW) may be provided according to the user's settings or the TOF sensor (TOF) In relation to the driving of the mounted transfer robot, a switching operation can be performed to alternately connect with the first to fourth contacts (CP1, CP2, CP3, CP4) under the control of a computational processing unit (not shown) that applies a control signal according to the driving state of the transfer robot. For example, in conjunction with the driving speed of the transfer robot, the connection state can be transitioned to provide a near-field view gradually as the driving speed increases, for example, when the transfer robot is driving at a relatively low speed, the connection state can be connected to the first contact (CP1, address line A1 of the first group or light-emitting element assembly ES1 of the first group) to provide a near-field view, and then gradually transition from the second contact (CP2) toward the fourth contact (CP4, address line A4 of the fourth group or light-emitting element assembly ES4 of the fourth group) as the driving speed increases. For example, when the transfer robot equipped with a TOF sensor (TOF) is driving at a high speed, the connection state can be transitioned to provide a far-field view through the fourth contact (CP4, address line A4 of the fourth group or light-emitting element assembly of the fourth group). It can be connected to the device assembly ES4).

[0114] For example, the above-mentioned transport robot may be switched to be connected to the first contact (CP1) to detect a close-range field of view in conjunction with low-speed driving in an area where surrounding objects (B) are relatively dense (an area with many obstacles) (providing a close-range field of view without gaps with overlapping spot sizes through the first contact CP1 or the first group of light-emitting element assembly ES1 connected to the first group of address line A1), and the switch (SW) may be switched to be connected to the fourth contact to detect a long-range field of view in conjunction with high-speed driving in an area where surrounding objects (B) are relatively sparse (an area with few obstacles).

[0115] In various embodiments of the present invention, the address lines (A1, A2, A3, A4) of the first to fourth groups may be extended in various forms. For example, in the embodiment illustrated in FIG. 19, the base substrate (S) may include first and second edges (S1, S2) that intersect each other, and each of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups may be arranged along the direction of the first edge (S1) of the base substrate (S) and may be alternately arranged along the direction of the second edge (S2), and the address lines (A1, A2, A3, A4) of the first to fourth groups may be extended in a parallel direction along the first edge (S1) of the base substrate (S), and a plurality of light-emitting elements (E) arranged parallel along the direction of the first edge (S1) of the base substrate (S) may be incorporated into a group of light-emitting elements (E) belonging to the same group. For example, the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may be arranged along the direction of the first edge (S1) and alternately arranged in a cyclic manner along the direction of the second edge (S2), and the address line (A1) of the first group may extend along the direction of the first edge (S1) and electrically connect the light-emitting element assemblies (ES1, the first electrode contact layer M1 of the light-emitting element E1 of the first group) arranged along the direction of the first edge (S1) to each other, and similarly, the address lines (A2, A3, A4) of the second to fourth groups may extend along the direction of the first edge (S1) and electrically connect the first electrode contact layers (M1) of the light-emitting element assemblies (ES2, ES3, ES4) of the second to fourth groups and the second to fourth light-emitting elements (E2, E3, E4) arranged along the direction of the first edge (S1) to each other.

[0116] In one embodiment of the present invention, each of the first to fourth address lines (A1, A2, A3, A4) may include a plurality of first to fourth address lines (A1, A2, A3, A4) that are extended parallel to each other along the direction of the first edge (S1) and are alternately arranged in a cyclic manner along the direction of the second edge (S2), and a connection line (C1, C2, C3, C4) of the first to fourth groups may be arranged to extend along the direction of the second edge (S2) and extend across the ends of the plurality of first to fourth address lines (A1, A2, A3, A4) so ​​as to bind the plurality of first to fourth address lines (A1, A2, A3, A4) that are extended parallel to each other along the direction of the first edge (S1).

[0117] In another embodiment of the present invention, as illustrated in FIG. 20, the base substrate (S) may include first and second edges (S1, S2) that intersect each other, and the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups may be arranged along a diagonal direction that simultaneously follows the direction of the first and second edges (S1, S2), and the address lines (A1, A2, A3, A4) of the first to fourth groups may be extended along a diagonal direction that simultaneously follows the direction of the first and second edges (S1, S2) of the base substrate (S), and a plurality of light-emitting elements (E) arranged in parallel along the diagonal direction may be incorporated into a group of light-emitting elements (E) belonging to the same group. For example, the light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups may be arranged along a diagonal direction that simultaneously follows the directions of the first and second edges (S1, S2) and may be alternately arranged in a cyclic manner along a cross diagonal direction that intersects the diagonal direction, and the address line (A1) of the first group may extend along the diagonal direction and electrically connect the light-emitting element assemblies of the first group (ES1, the first electrode contact layer M1 of the light-emitting element E1 of the first group) arranged along the diagonal direction to each other, and similarly, the address lines (A2, A3, A4) of the second to fourth groups may extend along the diagonal direction and electrically connect the light-emitting element assemblies of the second to fourth groups (ES2, ES3, ES4, the first electrode contact layer M1 of the second to fourth light-emitting elements E2, E3, E4) arranged along the diagonal direction to each other.

[0118] In one embodiment of the present invention, each of the first to fourth address lines (A1, A2, A3, A4) may include a plurality of first to fourth address lines (A1, A2, A3, A4) that are extended parallel to each other along a diagonal direction, and the plurality of first to fourth address lines (A1, A2, A3, A4) may be arranged alternately and cyclically along a cross diagonal direction that intersects the diagonal direction. In one embodiment of the present invention, a connection line (C1, C2, C3, C4) of a plurality of first to fourth groups of address lines (A1, A2, A3, A4) that are extended parallel to each other along a diagonal direction may be arranged to be extended in a bent form along the first and second edges (S1, S2) and extend across the ends of the plurality of first to fourth groups of address lines (A1, A2, A3, A4).

[0119] In various embodiments of the present invention, the address lines (A1, A2, A3, A4) of the first to fourth groups and the connection lines (C1, C2, C3, C4) of the first to fourth groups may be disposed on the upper surface of a light-emitting element (E) on which a first electrode contact layer (M1) is disposed, or on the upper surface of a light-emitting element array (EA) on which a plurality of light-emitting elements (E) are arranged.

[0120] FIGS. 38a to 38c illustrate a technical effect for mitigating the degradation of a light-emitting element (E) in a light-emitting element array (EA) or a light-emitting unit (EU) including a light-emitting element array (EA) according to an embodiment of the present invention.

[0121] Referring to the drawings, in one embodiment of the present invention, light with adaptively flexible optical characteristics can be provided by applying a light-emitting element array (EA) formed on a single base substrate (S) through address lines (A1, A2, A3, A4) of the first to fourth groups, which independently drive light-emitting element assemblies (ES1, ES2, ES3, ES4) of the first to fourth groups for emitting different types of light providing different spot sizes and different viewing distances, and a switch (SW) that selectively connects them to a driving power source (V). In particular, in one embodiment of the present invention, all light-emitting elements (E) arranged on a single base substrate (S) are not turned on simultaneously in an instantaneous manner, and through a switching operation between the address lines (A1, A2, A3, A4) of the first to fourth groups and the driving power source (V), any one group of light-emitting elements (E) among the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups is selectively turned on. An array of light-emitting elements (EA) or a TOF sensor (TOF) that is advantageous for heat dissipation may be provided, and for example, an array of light-emitting elements (EA) or a TOF sensor (TOF) in which the heat dissipation structure can be simplified compared to the number of identical light-emitting elements (E) may be provided.

[0122] Referring to FIG. 38a and FIG. 38b, in a comparative example compared with the present invention, light-emitting units (EUa, EUb) can be implemented in a form separated from each other by including different base substrates (S) each containing a plurality of light-emitting elements (Ea, Eb) belonging to different groups to provide different spot sizes and different viewing distances. However, in this embodiment, a heat generation problem may occur as the light-emitting elements (Ea, Eb) arranged adjacent to each other are turned on simultaneously, and for example, a separate heat dissipation design for each light-emitting unit (EUa, EUb) may be required. Referring to FIG. 38c, in one embodiment of the present invention, different groups of light-emitting elements (Ea, Eb, or assemblies of different groups of light-emitting elements) providing different types of light are formed on a single base substrate (S), and since one group of light-emitting elements (Ea, Eb, or assemblies of different groups of light-emitting elements) are not turned on simultaneously but are turned on selectively, a light-emitting unit (EU) that selectively provides different types of light can be provided in a more compact form and process convenience can be achieved, and, for example, heat dissipation can be rapidly achieved through a large area base substrate (S) through a switching operation that is turned on alternately at different times, and a separate heat dissipation design may not be required.

[0123] In one embodiment of the present invention, by forming an ion implantation layer (P) on each light-emitting element (E) to block defect migration from a defect source including an oxide layer (second oxide layer, O2) and an etching portion (ET) to a central region of an active layer (AR) where carrier concentration and light concentration occur, it is possible to prevent recognition errors of surrounding objects (B) due to degradation of light-emitting elements (E) in a light-emitting element array (EA) including a plurality of light-emitting elements (E), a light-emitting unit (EU) including the light-emitting element array (EA), and a TOF sensor (TOF) including the light-emitting unit (EU) (e.g., a recognition error in which surrounding objects B are not recognized due to degradation of light-emitting elements E). Even if a plurality of light-emitting elements (E) are arranged on a single base substrate (S), when considering the number of light-emitting elements (E) that are instantaneously turned on (only one group of light-emitting elements E among the first to fourth groups of light-emitting elements E1, E2, E3, E4 is instantaneously turned on), the light emitted from each light-emitting element (E) In one embodiment of the present invention, it may be desirable to selectively drive only one group of light-emitting elements (E) suitable for specific optical characteristics instantaneously and adaptively among a plurality of light-emitting elements (E) arranged on a single base substrate (S), so as to maintain an appropriate amount of light and prevent degradation of each light-emitting element (E), and to block the movement of defects from a defect source to a central region of an active layer (AR) where carrier concentration and light concentration occur.

[0124] In one embodiment of the present invention, a light-emitting element unit (EU) is disclosed, comprising a plurality of light-emitting elements (E) including different light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, a plurality of optical lenses (F) including optical lenses (F1, F2, F3, F4) of the first to fourth groups respectively disposed on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and a plurality of address lines (A) including address lines (A1, A2, A3, A4) of the first to fourth groups that are electrically connected to each of the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups and are electrically disconnected from each other.

[0125] In various embodiments of the present invention, the light-emitting element unit (EU) may include a group of light-emitting elements (E) and another group of light-emitting elements (E) that are electrically connected by each other via different address lines (A), and may include a group of optical lenses (F) disposed on one group of light-emitting elements (E) and another group of optical lenses (F) disposed on another group of light-emitting elements (E), and the one group of light-emitting elements (E) and the other group of light-emitting elements (E) may be connected to each other via each other via different address lines (A) and other address lines (A), and may be driven at different times. Accordingly, as an example relating to a specific embodiment of the present invention, different light-emitting elements (E1, E2, E3, E4) of first to fourth groups exemplified in one embodiment of the present invention, optical lenses (F1, F2, F3, F4) of first to fourth groups disposed on the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, and address lines (A1, A2, A3, A4) of first to fourth groups electrically connecting the light-emitting elements (E1, E2, E3, E4) of the first to fourth groups, in various embodiments of the present invention, include different light-emitting elements (E) of one group and other light-emitting elements (E) of another group that are electrically connected to each other through an address line (A) of one group and an address line (A) of another group and can be switched on / off at different times, and emitters from each of the light-emitting elements (E) of the first to fourth groups It may include a group of optical lenses (F) and a group of optical lenses (F) disposed on a different group of light-emitting elements (E) and a different group of light-emitting elements (E) to shape the shape of the light into different shapes of light that can provide different spot sizes and different viewing distances.

[0126] The above description is merely an illustrative explanation of the technical concept of the present embodiment, and a person skilled in the art to which the present embodiment belongs would be able to make various modifications and variations within the scope of the essential characteristics of the present embodiment. Accordingly, the present embodiments are intended to explain, not limit, the technical concept of the present embodiment, and the scope of the technical concept of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present embodiment. Explanation of the symbols

[0127] E: Light-emitting element E1~E4: Light-emitting elements of groups 1 to 4 ES: Light-emitting element assembly F1~F4: Optical lenses of groups 1 to 4 ES1~ES4: Light-emitting element assemblies of groups 1 to 4 FA,FA`: Optical lens array B: Peripheral object A: Address line A1~A4: Address lines of Groups 1 through 4 C1~C4: Final lines of Groups 1 through 4 SW: Switch V: Driving Power L1: First condensing lens L2: Second condensing lens FS: Support g1~g3: 1st to 3rd positions EU: Light-emitting unit AR: Active layer P: Ion implantation layer (width of the ion implantation layer) PD: Depth of the ion implantation layer ET: Etched area O1: First oxide layer O2: Second oxide layer OP: Oxide opening M1: First electrode contact layer M2: Second electrode contact layer S: Base substrate n-DBR: N-type DBR layer p-DBR: P-type DBR layer d1~d3: 1st to 3rd oxidation distances TOF: TOF sensor DU: Light receiving unit FP1, FP2: Optical axis positions

Claims

Claim 1 A light-emitting unit characterized by comprising: a base substrate; light-emitting elements arranged in a plurality of groups on the base substrate, wherein the outermost and inner sides are sequentially arranged in a rectangular shape or a rectangular shape with one side open, wherein a group of light-emitting elements that emit relatively a large amount of heat by irradiating light with the highest output is arranged at the outermost edge, and the groups are arranged inwardly from therein in order of relatively weaker output; and an address line electrically connected to each of the light-emitting elements of each group and electrically disconnected from each other. Claim 2 A light-emitting unit according to claim 1, further comprising optical lenses arranged in a plurality of groups and disposed on light-emitting elements of each group. Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 A light-emitting unit according to claim 1, further comprising a switch for switching an alternative connection with the driving power source between the address line of each group and the driving power source. Claim 8 A TOF sensor comprising: an array of light-emitting elements including a light-emitting unit; a light-receiving unit for receiving reflected light reflected from an object; and a processing unit for calculating a light flight time corresponding to the time difference between the light transmission time and the light reception time detected by the light-receiving unit from the light transmission time from the light-emitting unit and the light reception time of the reflected light, and calculating the distance to the object therefrom, wherein the light-emitting unit comprises: a base substrate; light-emitting elements arranged in a plurality of groups on the base substrate, sequentially arranged in a rectangular shape or a rectangular shape with one side open at the outermost and inner sides thereof, wherein a group of light-emitting elements that emit light with the highest output and emit relatively a large amount of heat is arranged at the outermost, and light-emitting elements are arranged from therein in order of relatively weak output; and an address line electrically connected to each of the light-emitting elements of each group and electrically disconnected from each other. Claim 9 delete Claim 10 delete

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