Semiconductor device Non-Destructive Testing Device Using Thermal emission

Abstract

A semiconductor device non-destructive testing device is provided. The semiconductor device non-destructive testing device may include a probe station that applies an electrical signal to a semiconductor device under test, an optical system that focuses thermal radiation energy emitted from the semiconductor device under test by the electrical signal applied to the semiconductor device under test, a camera that collects the thermal radiation energy focused through the optical system and acquires a temperature distribution image of the semiconductor device under test based on the collected thermal radiation energy, and a determination module that determines a defect in the semiconductor device under test through the temperature distribution image.

Description

Technology Field

[0001] The present invention relates to a non-destructive inspection device for semiconductor devices using heat emission. Background Technology

[0002] Conventional technologies related to semiconductor device inspection include Automated Optical Inspection (AOI), Automated X-ray Inspection (AXI), and Thermal Management ICs based on temperature sensors.

[0003] AOI is an inspection performed immediately after manufacturing semiconductor devices and before shipment, and while it can automatically detect external defects visible to the naked eye such as soldering defects, missing parts, and flipping, it is difficult to apply to semiconductor devices that are already in use and in operation, and there are problems in that it is difficult to determine the degree of degradation of semiconductor devices in terms of preventive inspection, such as internal defects, degradation status, and durability prediction.

[0004] X-ray inspection (AXI) is performed after the manufacture of semiconductor devices or during precision inspection. While it can identify internal soldering conditions in complex package components such as BGA and QFN that are not visible externally, such as minute cracks or delamination, X-ray analysis equipment used to analyze internal delamination or separation in semiconductor components faces safety issues due to the use of radiation, as well as problems such as the large size of the equipment and the inability to inspect it while it is in operation.

[0005] In the case of thermal monitoring systems, they can accurately monitor changes in systems due to temperature changes, such as high temperature protection and cooling system triggers, but most are used for real-time overheat detection (for safety purposes) and have the problem of not being able to track the cause of the defect.

[0006] Accordingly, the present invention aims to provide a non-destructive testing device for semiconductor devices that can easily detect internal defects of a semiconductor device in operation and, furthermore, predict durability (remaining lifespan).

[0007] In addition, the present invention aims to provide a PCB non-destructive inspection device capable of easily detecting internal defects in a PCB in operation and further predicting durability (remaining lifespan).

[0008] In other words, we aim to provide a technology that enables not only defect detection and durability prediction through non-destructive testing of semiconductor devices and PCBs, but also preemptive replacement to prepare for potential problems.

[0009] Meanwhile, analysis technology using thermal imaging cameras can analyze heat-generating areas of semiconductor devices, etc., within a wide area of ​​a PCB; however, due to the wide range of heat-generating areas, there are certain limitations in pinpointing the initial occurrence area. To overcome these limitations, analysis technology developed by de-capsulating the semiconductor to expose the semiconductor chip or die and then applying power to observe the heat-generating area. However, the above-described method causes damage problems due to decapsulation. Therefore, the present invention aims to provide a technology that proceeds similarly to the conventional analysis method using thermal imaging cameras, but allows for analysis without damage to the semiconductor chip or PCB caused by decapsulation. The problem to be solved

[0010] The technical problem that the present invention aims to solve is to provide a semiconductor device non-destructive inspection apparatus and method.

[0011] Another technical problem that the present invention aims to solve is to provide an apparatus and method capable of detecting internal defects in a semiconductor device in operation.

[0012] Another technical problem that the present invention aims to solve is to provide an apparatus and method capable of predicting the durability (remaining lifespan) of a semiconductor device.

[0013] The technical problems that the present invention aims to solve are not limited to those described above. means of solving the problem

[0014] To solve the above technical problems, the present invention provides a semiconductor device non-destructive inspection device.

[0015] According to one embodiment, the semiconductor device non-destructive testing device may include a probe station that applies an electrical signal to a semiconductor device under test, an optical system that focuses thermal radiation energy emitted from the semiconductor device under test by the electrical signal applied to the semiconductor device under test, a camera that collects the thermal radiation energy focused through the optical system and acquires a temperature distribution image of the semiconductor device under test based on the collected thermal radiation energy, and a determination module that determines a defect in the semiconductor device under test through the temperature distribution image.

[0016] According to one embodiment, the determination module may include detecting the location of a defect occurring in the semiconductor device under test by comparing the temperature distribution image with the optical image of the semiconductor device under test.

[0017] According to one embodiment, the determination module may include detecting the type of defect that occurred in the semiconductor device under test by comparing a first temperature distribution image obtained at a first time point and a second temperature distribution image obtained at a second time point after the first time point.

[0018] According to one embodiment, the optical system may include a lens comprising any one of germanium (Ge), zinc selenide (ZnSe), and calcium fluoride (CaF2).

[0019] According to one embodiment, the camera may include an indium antimonide (InSb) sensor.

[0020] According to one embodiment, the semiconductor device non-destructive inspection device may further include a cooling module for cooling the camera. Effects of the invention

[0021] A semiconductor device non-destructive inspection device according to an embodiment of the present invention may include a probe station that applies an electrical signal to a semiconductor device under test, an optical system that focuses thermal radiation energy emitted from the semiconductor device under test by the electrical signal applied to the semiconductor device under test, a camera that collects the thermal radiation energy focused through the optical system and acquires a temperature distribution image of the semiconductor device under test based on the collected thermal radiation energy, and a determination module that determines a defect in the semiconductor device under test through the temperature distribution image.

[0022] Accordingly, compared to conventional technology that determines defects in semiconductor devices under test using temperature distribution images acquired through a thermal imaging camera, more localized analysis can be performed, thereby further improving the reliability of non-destructive testing of semiconductor devices. Brief explanation of the drawing

[0023] FIGS. 1 and FIGS. 2 are drawings for explaining a semiconductor device non-destructive inspection device according to an embodiment of the present invention. FIG. 3 is a diagram illustrating a defect location detection process using a semiconductor device non-destructive inspection device according to an embodiment of the present invention. FIG. 4 is a diagram illustrating the process of detecting defect types using a semiconductor device non-destructive inspection device according to an embodiment of the present invention. FIG. 5 is a diagram illustrating the types of defects detectable using a semiconductor device non-destructive inspection device according to an embodiment of the present invention. FIG. 6 is a flowchart illustrating a PCB lifespan prediction method according to an embodiment of the present invention. FIG. 7 is a flowchart for specifically explaining step S200 of the PCB lifespan prediction method according to an embodiment of the present invention. FIG. 8 is a diagram illustrating a temperature distribution image used in a PCB lifespan prediction method according to an embodiment of the present invention. FIG. 9 is a diagram illustrating steps S310 and S320 performed between steps S300 and S400 of a PCB lifespan prediction method according to an embodiment of the present invention. FIG. 10 is a diagram illustrating the data transfer flow within each component included in a PCB non-destructive inspection device according to an embodiment of the present invention. FIG. 11 is an image of PCB sample 1 in a state before stress is applied, taken using a camera according to the comparative example and experimental example of the present invention. FIG. 12 is an image of PCB sample 1 in a state after stress application using a camera according to the comparative example and experimental example of the present invention. FIG. 13 is an enlarged image of PCB sample 1 taken using a camera according to an experimental example of the present invention. FIG. 14 is an image of PCB sample 1 taken using a camera according to a comparative example of the present invention. Specific details for implementing the invention

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete, and to ensure that the concept of the present invention is sufficiently conveyed to those skilled in the art.

[0025] In this specification, when a component is described as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. Additionally, in the drawings, the thicknesses of the films and regions are exaggerated for the effective description of the technical content.

[0026] Additionally, although terms such as first, second, third, etc. have been used to describe various components in various embodiments of this specification, these components should not be limited by such terms. Accordingly, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment.

[0027] Each embodiment described and exemplified herein also includes its complementary embodiment. Additionally, the term 'and / or' in this specification is used to mean including at least one of the components listed before and after it.

[0028] In the specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, components, or combinations thereof described in the specification, and should not be understood as excluding the existence or addition of one or more other features, numbers, steps, components, or combinations thereof.

[0029] In addition, in describing the present invention below, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description will be omitted.

[0031] FIGS. 1 and 2 are drawings for explaining a semiconductor device non-destructive inspection device according to an embodiment of the present invention, FIG. 3 is a drawing for explaining a defect location detection process using a semiconductor device non-destructive inspection device according to an embodiment of the present invention, FIG. 4 is a drawing for explaining a defect type detection process using a semiconductor device non-destructive inspection device according to an embodiment of the present invention, and FIG. 5 is a drawing for explaining types of defects detectable using a semiconductor device non-destructive inspection device according to an embodiment of the present invention.

[0032] Referring to FIGS. 1 and 2, a semiconductor device non-destructive inspection device according to an embodiment of the present invention may include a probe station (10), an optical system (20), a camera (30), a cooling module (not shown), and a judgment module (not shown). Each component is described below.

[0033] The probe station (10) can apply an electrical signal to the semiconductor device (SD) under test. According to one embodiment, the probe station (10) can apply an electrical signal of either current or voltage to the semiconductor device (SD) under test. When an electrical signal is applied to the semiconductor device (SD) under test by the probe station (10), the semiconductor device (SD) can be implemented in an operating state, and as a result, a current flow can occur within the semiconductor device (SD), and thermal radiation energy can be emitted from the semiconductor device (SD) by the current flow within the semiconductor device (SD). More specifically, in a specific region within the semiconductor device (SD) (e.g., a region with a high load, such as a defect region), power consumption increases, so heat may be generated, and thermal radiation energy in the mid-infrared (MWIR) or long-infrared (LWIR) band may be emitted according to the principle of blackbody radiation from the region where the temperature has risen due to heat generation.

[0034] According to one embodiment, the probe station (10) may also operate as a station for moving the semiconductor device (SD) under test. For example, the probe station (10) may move the semiconductor device (SD) under test in the X-axis, Y-axis, and Z-axis directions.

[0035] The optical system (20) can focus thermal radiation energy emitted from the semiconductor device under test (SD) by an electrical signal applied to the semiconductor device under test (SD). Additionally, according to one embodiment, the optical system (20) can control the path of the focused thermal radiation energy so that the focused thermal radiation energy can be provided to a camera (30) described later. According to one embodiment, the optical system (20) may include a lens comprising a material having excellent infrared (IR) transmission characteristics. For example, the optical system (20) may include a lens comprising any one of germanium (Ge), zinc selenide (ZnSe), and calcium fluoride (CaF2). Although the optical system (20) is depicted as a single lens in FIG. 1, the optical system (20) may also be composed of multiple lenses.

[0036] The camera (30) can collect thermal radiation energy focused through the optical system (20) and acquire a temperature distribution image of the semiconductor device (SD) under test based on the collected thermal radiation energy. According to one embodiment, the camera (30) may include an indium antimonide (InSb) sensor and collect thermal radiation energy therefrom. According to one embodiment, the camera (30) can detect thermal radiation energy through the indium antimonide (InSb) sensor and convert it into an electrical signal, and can output the converted electrical signal as a two-dimensional (2D) image, and the output two-dimensional image can be defined as the temperature distribution image.

[0037] The cooling module can cool the camera (30). Since the indium antimonide (InSb) sensor included in the camera (30) detects heat, if the heat generated by the sensor itself is not reduced, a problem may arise in which minute differences in thermal radiation energy cannot be detected. Accordingly, by cooling the indium antimonide (InSb) sensor of the camera (30) through the cooling module to reduce the heat generated by the sensor itself, even minute differences in thermal radiation energy can be easily detected, thereby improving the reliability of the temperature distribution image obtained through the camera (30). According to one embodiment, the cooling module can cool the indium antimonide (InSb) sensor using LN2 (Liquid Nitrogen) cooling. Alternatively, according to another embodiment, the cooling module can cool the indium antimonide (InSb) sensor using a Stirling engine cooler.

[0038] The above determination module can determine a defect in the semiconductor device under test (SD) through the temperature distribution image. According to one embodiment, the determination module can detect the location of a defect occurring in the semiconductor device under test (SD) by comparing the temperature distribution image (TI) with a reference image (SI) of the semiconductor device under test (SD). For example, the reference image (SI) of the semiconductor device under test (SD) may include an optical image of the semiconductor device under test (SD). Alternatively, as another example, the reference image (SI) of the semiconductor device under test (SD) may include a design layout (GDS data) image of the semiconductor device under test (SD). More specifically, as shown in FIG. 3, after identifying the region where a temperature change occurred within the temperature distribution image (TI), the defect region (DA) within the reference image (SI) can be identified by comparing it with the reference image (SI), thereby detecting the location of the defect occurring in the semiconductor device under test (SD).

[0039] According to one embodiment, the determination module can detect the type of defect occurring in the semiconductor device under test by comparing a first temperature distribution image (TI1) obtained at a first time point and a second temperature distribution image (TI2) obtained at a second time point after the first time point. More specifically, as shown in FIG. 4, if there is an area (DA) in which brightness increases rapidly within the second temperature distribution image (TI2) compared with the first temperature distribution image (TI1), it can be detected that a metal short defect has occurred in that area (DA). In addition, as shown in FIG. 5, the determination module can detect various types of defects such as migration, oxide crack, bridge, metal particle, spike, and leakage current.

[0040] Consequently, a semiconductor device non-destructive testing device according to an embodiment of the present invention may include a probe station (10) that applies an electrical signal to a semiconductor device under test, an optical system (20) that focuses thermal radiation energy emitted from the semiconductor device under test by the electrical signal applied to the semiconductor device under test, a camera (30) that collects the thermal radiation energy focused through the optical system and acquires a temperature distribution image of the semiconductor device under test based on the collected thermal radiation energy, and a determination module that determines a defect in the semiconductor device under test through the temperature distribution image.

[0041] Accordingly, compared to conventional technology that determines defects in semiconductor devices under test using temperature distribution images acquired through a thermal imaging camera, more localized analysis can be performed, thereby further improving the reliability of non-destructive testing of semiconductor devices.

[0042] In addition, the semiconductor device non-destructive testing device according to an embodiment of the present invention can be applied not only to semiconductor devices but also to PCBs. That is, the semiconductor device to be tested used in the semiconductor device non-destructive testing device according to an embodiment of the present invention can be interpreted to include a PCB.

[0044] The above describes a semiconductor device non-destructive testing device according to an embodiment of the present invention. Below, a PCB lifespan prediction method and a PCB non-destructive testing device according to an embodiment of the present invention are described. In addition, the temperature distribution image described in the PCB lifespan prediction method and PCB non-destructive testing device according to an embodiment of the present invention can be obtained not only through the first measurement module described below, but also through the probe station (10), optical system (20), camera (30), and cooling module (not shown) of the semiconductor device non-destructive testing device according to the above embodiment described with reference to FIGS. 1 and FIGS. 2.

[0045] FIG. 6 is a flowchart for explaining a PCB lifespan prediction method according to an embodiment of the present invention, FIG. 7 is a flowchart for specifically explaining step S200 of a PCB lifespan prediction method according to an embodiment of the present invention, FIG. 8 is a diagram for explaining a temperature distribution image used in a PCB lifespan prediction method according to an embodiment of the present invention, and FIG. 9 is a diagram for explaining steps S310 and S320 performed between steps S300 and S400 of a PCB lifespan prediction method according to an embodiment of the present invention.

[0046] Referring to FIGS. 6 to 9, a PCB life prediction method according to an embodiment of the present invention may include the steps of preparing a PCB to be tested (S100), obtaining first measurement data (S200), obtaining second measurement data (S300), calculating first variation data (S310), calculating second variation data (S320), obtaining defect data (S400), obtaining life data (S500), building a database (S600), and predicting the life of the PCB to be tested (S700). Each step is described below.

[0047] In the above step S200, the temperature of the PCB under test may be measured to obtain first measurement data. According to one embodiment, the above step S200 may include the step of obtaining a temperature distribution image of the PCB under test (S210), the step of dividing the temperature distribution image into a plurality of grid cells (S220), the step of assigning an individual temperature value to each of the divided grid cells (S230), the step of calculating the average value of the individual temperature values ​​of the plurality of grid cells as temperature data (S240), and the step of summing the areas of grid cells having a temperature value greater than or equal to a reference temperature value to calculate area data (S250). That is, a temperature distribution image in which the temperature of the PCB under test is measured may be obtained, and temperature data and area data may be calculated from the temperature distribution image. More specifically, as illustrated in FIG. 8, the temperature distribution image of the PCB (P) under test can be divided into a plurality of grid cells forming rows and columns in a two-dimensional manner, and an individual temperature value is assigned to each grid cell. The average value of the individual temperature values ​​of the plurality of grid cells can be calculated as the temperature data, and the areas of the grid cells having a temperature value greater than or equal to a reference temperature value can be summed to calculate the area data. The temperature data and the area data can be defined as the first measurement data.

[0048] In the above S300 step, electrical characteristics of the PCB under test may be measured to obtain second measurement data. According to one embodiment, current data obtained by measuring the current of the PCB under test, voltage data obtained by measuring the voltage, and response data obtained by measuring the signal response speed may be obtained. The current data, voltage data, and response data for the PCB under test (P) may be defined as second measurement data.

[0049] In the above step S310, the first measurement data of the PCB under test measured at the first time point and the first measurement data of the PCB under test (P) measured at the second time point after the first time point can be compared to calculate the change value of the first measurement data as the first change data, and in the above step S320, the second measurement data of the PCB under test measured at the first time point and the second measurement data of the PCB under test measured at the second time point can be compared to calculate the change value of the second measurement data as the second change data.

[0050] In the above S400 step, defect data of the PCB under test can be obtained using the first variation data and the second variation data. According to one embodiment, any one of the temperature variation data and the area variation data of the first variation data and any one of the current variation data, the voltage variation data, and the response variation data of the second variation data can be used to determine any one of the defects of the PCB under test (P), such as crack, short circuit, separation and delamination, and open circuit. Additionally, according to one embodiment, even if no physical defect occurs, if the rate of temperature change is large or the change in the heat generation location is large, a non-conformity judgment can be made by utilizing a DB, etc.

[0051] For example, if the temperature fluctuation data value is large in the negative direction (when the temperature data value at the first time point minus the temperature data value at the second time point is negative) and the voltage fluctuation data value is large in the positive direction (when the voltage data value at the first time point minus the voltage data value at the second time point is positive), it can be determined that the temperature has risen rapidly and the voltage has fallen rapidly due to the use of the PCB (P) under test, and thus it can be determined that a crack defect has occurred in the PCB (P) under test.

[0052] In contrast, for another example, if the temperature fluctuation data value is close to 0 (when the temperature data value at the first time point minus the temperature data value at the second time point is close to 0) and the current fluctuation data value is large in the negative direction (when the current data value at the first time point minus the current data value at the second time point is negative), it can be determined that the current has increased rapidly even though no temperature fluctuation occurred due to the use of the PCB (P) under test, and thus it can be determined that a short circuit defect occurred within the PCB (P) under test.

[0053] In contrast, as another example, if the area fluctuation data value is large in the negative direction (where the area data value at the first time point minus the area data value at the second time point is negative) and the response fluctuation data value is large in the negative direction (where the response data value at the first time point minus the response data value at the second time point is negative), it can be determined that the high-temperature area has increased and the signal response speed has been delayed due to the use of the PCB (P) under test, and thus it can be determined that a degradation defect has occurred within the PCB (P) under test.

[0054] In contrast, as another example, if the area fluctuation data changes in a positive or negative direction, or if the rate of temperature change changes significantly in a positive or negative direction but no physical defects occur, it may be determined that it is unsuitable for continued use based on the accumulated data.

[0055] In step S500 above, lifespan data can be obtained by measuring the lifespan of a defective PCB under test, and in step S600 above, a database can be constructed using the first variation data, the second variation data, the defect data, and the lifespan data, and in step S700 above, the lifespan of a PCB under test different from the PCB under test can be predicted using the database. For example, after measuring the first variation data and the second variation data of the PCB under test, a predicted lifespan value of the PCB under test can be calculated from the database based on this.

[0056] Consequently, the PCB lifespan prediction method according to an embodiment of the present invention may include the steps of: preparing a PCB under test; obtaining first measurement data by measuring the temperature of the PCB under test; obtaining second measurement data by measuring the electrical characteristics of the PCB under test; obtaining defect data of the PCB under test using the first measurement data and the second measurement data; obtaining lifespan data by measuring the lifespan of the defective PCB under test; constructing a database using the first measurement data, the second measurement data, the defect data, and the lifespan data; and predicting the lifespan of the PCB under test and other PCBs under test using the database. Accordingly, internal defects of a PCB in operation can be easily detected, and furthermore, durability (remaining lifespan) can be predicted. In addition, if the predicted remaining lifespan is shorter than the usage period, the PCB under test can be judged as unsuitable.

[0057] FIG. 10 is a diagram illustrating the data transfer flow within each component included in a PCB non-destructive inspection device according to an embodiment of the present invention.

[0058] A PCB non-destructive inspection device according to an embodiment of the present invention may include a stage, a first measurement module (200), a second measurement module (300), a data comparison module (400), a defect determination module (500), and a lifespan prediction module (600). Each component is described below.

[0059] A PCB (P) under test may be placed and supported on the stage. Additionally, the stage may be configured to be movable. According to one embodiment, the stage may be moved in a first direction (e.g., X-axis direction), a second direction perpendicular to the first direction (e.g., Y-axis direction), and a third direction perpendicular to both the first direction and the second direction (e.g., Z-axis direction). As the stage moves, the PCB (P) under test placed on the stage may also be moved in the first to third directions.

[0060] The first measurement module (200) can measure the temperature of the PCB (P) under test placed on the stage and obtain a temperature distribution image of the PCB under test. According to one embodiment, the first measurement module (200) may include a thermal imaging camera (210), a visible light camera (220), a lamp (230), a first splitter (240), a second splitter (250), a condensing lens (260), and a data converter.

[0061] The lamp (230) is a light source that emits light, and the light emitted from the lamp (230) can be provided to the PCB (P) under test by sequentially passing through the first splitter (240), the second splitter (250), and the condensing lens (260). According to one embodiment, the first splitter (240) and the second splitter (250) can transmit and reflect light, and the light emitted from the lamp (230) is reflected from the first splitter (240), then passes through the second splitter (250) and is provided to the condensing lens (260), and the condensing lens (260) can collect the light that has passed through the second splitter (250) and then provide it to the PCB (P) under test.

[0062] The light provided to the test PCB (P) may be reflected from the test PCB (P), and the light reflected from the test PCB (P) may be provided to the visible light camera (220) and the thermal imaging camera (210). More specifically, a portion of the light reflected from the test PCB (P) may pass through the condensing lens (260), be reflected from the second splitter (250), and then be provided to the visible light camera (220), and another portion of the light reflected from the test PCB (P) may pass through the condensing lens (260), sequentially pass through the second splitter (250) and the first splitter (240), and then be provided to the thermal imaging camera (210). The above visible light camera (220) can acquire an optical image of the PCB (P) under test using the collected light, and the above thermal imaging camera (210) can acquire a temperature distribution image of the PCB (P) under test using the collected light.

[0063] The data converter (not shown) can calculate temperature data and area data from the temperature distribution image. More specifically, as shown in FIG. 3, the data converter (not shown) can divide the temperature distribution image of the PCB (P) under test into a plurality of grid cells, such that the plurality of grid cells form rows and columns in a two-dimensional manner, assign individual temperature values ​​to each grid cell, calculate the average value of the individual temperature values ​​of the plurality of grid cells as the temperature data, and calculate the area data by summing the areas of grid cells having a temperature value greater than or equal to a reference temperature value. Additionally, the data converter (not shown) can group grid cells having similar temperatures within the temperature distribution image. For example, as shown in FIG. 7, grid cells having similar temperatures within the temperature distribution image can be grouped into first to sixth regions (A1 to A6).

[0064] As described above, dividing the temperature distribution image into multiple grid cells to calculate temperature data and area data is an exemplary explanation of one of various methods for quantification and measurement, and various methods for quantification and measurement can be applied.

[0065] That is, the first measurement module (200) can measure the temperature of the PCB (P) under test placed on the stage and calculate temperature data and area data for the PCB (P) under test. The temperature data and the area data can be defined as the first measurement data.

[0066] The second measurement module (300) can measure the electrical characteristics of the PCB (P) under test placed on the stage. More specifically, the second measurement module (300) can obtain current data by measuring the current of the PCB (P) under test, voltage data by measuring the voltage, and response data by measuring the signal response speed. The current data, voltage data, and response data for the PCB (P) under test can be defined as second measurement data. According to one embodiment, the second measurement data can be obtained from the same area as the area where the first measurement data was obtained, and the stage can be configured to move in the first to third directions so that the first measurement data and the second measurement data are obtained from the same area of ​​the PCB (P) under test.

[0067] The data comparison module (400) receives the first measurement data and the second measurement data from the first measurement module (200) and the second measurement module (300), and can calculate the first variation data and the second variation data by receiving data measured at different points in time.

[0068] More specifically, the first measurement data of the PCB (P) under test measured at a first time point and the first measurement data of the PCB (P) under test measured at a second time point after the first time point can be compared to calculate the variation value of the first measurement data as the first variation data, and the second measurement data of the PCB (P) under test measured at the first time point and the second measurement data of the PCB (P) under test measured at the second time point can be compared to calculate the variation value of the second measurement data as the second variation data. Accordingly, the first variation data may include temperature variation data and area variation data, and the second variation data may include current variation data, voltage variation data, and response variation data.

[0069] The defect determination module (500) can receive the first variation data and the second variation data to determine a defect in the PCB (P) under test and obtain defect data for the PCB (P) under test. Additionally, the defect determination module (500) can obtain lifespan data for the PCB (P) under test that has a defect by measuring the lifespan of the PCB (P) under test that has a defect. According to one embodiment, the defect data can be obtained not only when there is a defect in the PCB itself, but also when the lifespan of a semiconductor within a PCB component is exhausted due to a physical defect or when the lifespan is exhausted without a physical defect.

[0070] According to one embodiment, the defect determination module (500) can determine any one of a crack, short circuit, separation and delamination, and open circuit of the PCB (P) under test by using either the temperature fluctuation data and the area fluctuation data of the first fluctuation data and any one of the current fluctuation data, the voltage fluctuation data, and the response fluctuation data of the second fluctuation data. Additionally, according to one embodiment, even if no physical defect occurs, if the rate of temperature change is large or the change in the heat generation location is large, a non-conformity determination can be made by utilizing a DB, etc.

[0071] For example, if the temperature fluctuation data value is large in the negative direction (when the temperature data value at the first time point minus the temperature data value at the second time point is negative) and the voltage fluctuation data value is large in the positive direction (when the voltage data value at the first time point minus the voltage data value at the second time point is positive), it can be determined that the temperature has risen rapidly and the voltage has fallen rapidly due to the use of the PCB (P) under test, and thus it can be determined that a crack defect has occurred in the PCB (P) under test.

[0072] In contrast, for another example, if the temperature fluctuation data value is close to 0 (when the temperature data value at the first time point minus the temperature data value at the second time point is close to 0) and the current fluctuation data value is large in the negative direction (when the current data value at the first time point minus the current data value at the second time point is negative), it can be determined that the current has increased rapidly even though no temperature fluctuation occurred due to the use of the PCB (P) under test, and thus it can be determined that a short circuit defect occurred within the PCB (P) under test.

[0073] In contrast, as another example, if the area fluctuation data value is large in the negative direction (where the area data value at the first time point minus the area data value at the second time point is negative) and the response fluctuation data value is large in the negative direction (where the response data value at the first time point minus the response data value at the second time point is negative), it can be determined that the high-temperature area has increased and the signal response speed has been delayed due to the use of the PCB (P) under test, and thus it can be determined that a degradation defect has occurred within the PCB (P) under test.

[0074] The defect data and lifespan data obtained from the defect determination module (500) may be provided to the lifespan prediction module (600). Additionally, the lifespan prediction module (600) may receive the first variation data and the second variation data from the data comparison module (400). The lifespan prediction module (600) may construct a database using the first variation data, the second variation data, the defect data, and the lifespan data. Furthermore, the lifespan prediction module (600) may supplement the database through AI learning using the first variation data, the second variation data, the defect data, and the lifespan data. Accordingly, the lifespan of various PCBs under test can be predicted using the database. For example, if the first variation data and the second variation data of the PCB under test are measured and provided to the lifespan prediction module (600), the predicted lifespan value of the PCB under test can be calculated from the database based on the provided first variation data and second variation data.

[0075] According to one embodiment, the PCB non-destructive testing device may further include a PCB usage determination module (700). The PCB usage determination module (700) receives defect data and lifespan analysis data from the lifespan prediction module (600) and can determine whether the PCB under test is being used. For example, if the lifespan predicted by the lifespan prediction module (600) is shorter than the current usage period, the PCB usage determination module (700) can determine whether the PCB under test is being used based on the defect data and the analysis data.

[0077] Specific experimental examples are described below.

[0078] Experimental Example: Comparison of characteristics between a thermal imaging camera and a camera according to an embodiment of the present invention

[0079] The temperature distribution of a PCB sample was captured using a thermal imaging camera and a camera according to the above embodiment (a camera using an InSb sensor). The thermal imaging camera is defined as the camera according to the comparative example, and the camera using the InSb sensor is defined as the camera according to the experimental example.

[0080] FIG. 11 is an image of PCB sample 1 in a state before stress is applied using a camera according to a comparative example and an experimental example of the present invention, FIG. 12 is an image of PCB sample 1 in a state after stress is applied using a camera according to a comparative example and an experimental example of the present invention, FIG. 13 is an enlarged image of PCB sample 1 taken using a camera according to an experimental example of the present invention, and FIG. 14 is an image of PCB sample 1 taken using a camera according to a comparative example of the present invention.

[0081] Figures 11 and 12 (a) shows an image taken using a camera (thermal imaging camera) according to a comparative example, Figures 11 and 12 (b) shows an image taken using a camera (camera using an InSb sensor) according to an experimental example, Figure 13 (a) shows an enlarged image of PCB sample 1 in a state after stress application using a camera (camera using an InSb sensor) according to an experimental example, and Figure 13 (b) shows an enlarged image of PCB sample 1 in a state before stress application using a camera (camera using an InSb sensor) according to an experimental example.

[0082] As can be seen in Figures 11 to 13, unlike the camera according to the comparative example (thermal imaging camera), the camera according to the experimental example (camera using an InSb sensor) can be seen to enable more localized analysis.

[0083] Figure 11 (a) shows an image showing only the chip portion in Figure 14 (b), and Figure 12 (a) shows an image showing only the chip portion in Figure 14 (c).

[0085] Although the present invention has been described in detail using preferred embodiments, the scope of the invention is not limited to specific embodiments and should be interpreted by the appended claims. Furthermore, those skilled in the art will understand that many modifications and variations are possible without departing from the scope of the invention. Explanation of the symbols

[0086] 10: Probe Station 20: Optical system 30: Camera 200: First measurement module 300: Second measurement module 400: Data Comparison Module 500: Defect Detection Module 600: Life Prediction Module 700: PCB Usage Determination Module

Claims

Claim 1 A semiconductor device non-destructive inspection device comprising: a probe station for applying an electrical signal to a semiconductor device under test; an optical system for focusing thermal radiation energy emitted from the semiconductor device under test by the electrical signal applied to the semiconductor device under test; a camera for collecting the thermal radiation energy focused through the optical system and acquiring a temperature distribution image of the semiconductor device under test based on the collected thermal radiation energy; a determination module for determining defects in the semiconductor device under test through the temperature distribution image; and a cooling module for cooling the camera, wherein the semiconductor device under test is implemented in an operating state by the electrical signal and the thermal radiation energy is self-emitted from the semiconductor device under test in the operating state, the camera detects the thermal radiation energy and converts it into an electrical signal and outputs the converted electrical signal as a two-dimensional image, which is the temperature distribution image, and the determination module detects the type of defect occurring in the semiconductor device under test by comparing a first temperature distribution image acquired at a first time point and a second temperature distribution image acquired at a second time point after the first time point. Claim 2 A semiconductor device non-destructive inspection device according to claim 1, wherein the determination module detects the location of a defect occurring in the semiconductor device under test by comparing the temperature distribution image with the optical image of the semiconductor device under test. Claim 3 delete Claim 4 A semiconductor device non-destructive inspection device according to claim 1, wherein the optical system comprises a lens comprising any one of germanium (Ge), zinc selenide (ZnSe), and calcium fluoride (CaF2). Claim 5 In claim 1, the camera is a semiconductor device non-destructive inspection device comprising an indium antimonide (InSb) sensor. Claim 6 delete

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