Process fluid treatment apparatus, wafer cleaning apparatus and semiconductor manufacturing equipment including the same

Abstract

The present invention aims to provide a process fluid processor capable of more effectively decomposing ozone in a process fluid, a wafer cleaning device including the same, and a semiconductor manufacturing facility. A process fluid processor for processing a process fluid used for cleaning a wafer in a semiconductor manufacturing facility according to the present invention comprises: a housing forming an internal space for receiving the process fluid; a spray nozzle spraying a process fluid containing an ozone component into the internal space in the form of a mist; and a nozzle heating member heating the process fluid sprayed through the spray nozzle.

Description

Technology Field

[0001] The present invention relates to a process fluid processor for processing a process fluid used in cleaning a wafer, a wafer cleaning apparatus including the same, and a semiconductor manufacturing facility. Background Technology

[0002] The semiconductor manufacturing process is a process for manufacturing semiconductor products capable of processing electrical signals, and includes a processing process (front-end process) that forms patterns on a wafer through processes such as oxidation, photolithography, etching, ion implantation, and deposition, and a packaging process (back-end process) that manufactures a finished semiconductor package through processes such as dicing, die bonding, wiring, molding, marking, and testing on the patterned wafer.

[0003] In particular, various organic and inorganic foreign substances exist on the substrate. Therefore, effectively removing foreign substances from the substrate is very important for improving manufacturing yield. A cleaning process using a process fluid is mainly used to remove foreign substances. The cleaning process can be performed by supplying a processing liquid (process fluid) to the upper or lower surface of the substrate while rotating a spin chuck that supports the substrate, and after the cleaning process, a rinsing process using a rinse liquid and a drying process using a drying gas are performed.

[0004] Meanwhile, process fluids may contain ozone, and ozone must be separated when the process fluid is discharged. Korean Registered Patent No. 10-2020230 presents a method for separating ozone from a process fluid by spraying the process fluid onto a striking plate to cause it to collide with the plate, and by using a heater in a circulation line to raise the temperature of the process fluid. However, since water, which mainly constitutes the process fluid, has a high specific heat, the temperature increase effect is negligible, resulting in a problem of low ozone decomposition effectiveness. Prior art literature

[0005] Republic of Korea Registered Patent Publication No. 10-2020230 Republic of Korea Registered Patent Publication No. 10-1933080 Japanese Published Patent Publication No. 2017-176963 Republic of Korea Registered Patent Publication No. 10-2335726 The problem to be solved

[0006] The present invention aims to provide a process fluid treatment device capable of more effectively decomposing ozone in a process fluid, a wafer cleaning device including the same, and a semiconductor manufacturing facility. means of solving the problem

[0007] A process fluid processor for processing a process fluid used for cleaning a wafer in a semiconductor manufacturing facility according to the present invention comprises: a housing forming an internal space for receiving the process fluid; a spray nozzle for spraying a process fluid containing an ozone component into the internal space in the form of a mist; and a nozzle heating member for heating the process fluid sprayed through the spray nozzle.

[0008] According to an embodiment of the present invention, the nozzle heating member may be provided as a heating wire mounted in the internal flow path of the spray nozzle.

[0009] According to an embodiment of the present invention, the nozzle heating member may be provided as a heating wire mounted on the outer side of the spray nozzle.

[0010] According to an embodiment of the present invention, the nozzle heating member may be provided as a heater jacket that surrounds the outside of the spray nozzle.

[0011] According to an embodiment of the present invention, the spray nozzle may be made of SUS316 stainless steel.

[0012] According to an embodiment of the present invention, the process fluid processor further includes a circulation line that provides a path for the process fluid contained in the housing to circulate, and the process fluid circulated along the circulation line can be sprayed in the form of a mist through the spray nozzle.

[0013] According to an embodiment of the present invention, the process fluid treatment device may further include a gas supply pipe that supplies a decomposition gas that promotes the decomposition of ozone components in the process fluid.

[0014] According to an embodiment of the present invention, a gas heating member mounted on the gas supply pipe and heated the decomposition gas supplied into the internal space may be further included.

[0015] A wafer cleaning device for a semiconductor manufacturing facility according to the present invention comprises: a process fluid supplyer for supplying a process fluid for cleaning treatment of the wafer; a process chamber for performing cleaning treatment on the wafer by supplying the process fluid to the wafer; and a process fluid processor for processing the process fluid used for cleaning the wafer. The process fluid processor comprises: a housing forming an internal space for receiving the process fluid; a spray nozzle for spraying the process fluid containing an ozone component into the internal space in the form of a mist; and a nozzle heating member for heating the process fluid sprayed through the spray nozzle.

[0016] According to an embodiment of the present invention, the process fluid treatment device is connected to the process chamber through a discharge pipe, and the spray nozzle is connected to the discharge pipe to spray the process fluid introduced through the discharge pipe into the internal space in the form of a mist.

[0017] According to an embodiment of the present invention, the process chamber may include a supply nozzle for supplying the process fluid to the wafer; and a recovery cup for recovering the process fluid supplied to the wafer.

[0018] According to an embodiment of the present invention, the process chambers are provided in a plurality, the process fluid supplyer supplies the process fluid to the plurality of process chambers, and the process fluid processor can process the process fluid recovered from the plurality of process chambers.

[0019] A semiconductor manufacturing facility according to the present invention comprises: an index module for handling a wafer introduced into the semiconductor manufacturing facility; and a process processing module comprising a wafer cleaning device for performing a cleaning treatment on the wafer. The wafer cleaning device comprises: a process fluid supplyer for supplying a process fluid for cleaning treatment of the wafer; a process chamber for performing a cleaning treatment on the wafer by supplying the process fluid to the wafer; and a process fluid processor for processing the process fluid used for cleaning the wafer. The process fluid processor comprises: a housing forming an internal space for receiving the process fluid; a spray nozzle for spraying a process fluid containing an ozone component into the internal space in the form of a mist; and a nozzle heating member mounted on the spray nozzle for heating the process fluid sprayed through the spray nozzle. Effects of the invention

[0020] According to the present invention, by equipping a nozzle heating member to a spray nozzle that sprays a process fluid in the form of a mist, a process fluid containing an ozone component can be sprayed in the form of a high-temperature mist, and thus the ozone component of the process fluid can be effectively decomposed. Brief explanation of the drawing

[0021] FIG. 1 illustrates the layout of a semiconductor manufacturing facility according to the present invention. FIGS. 2 and FIGS. 3 illustrate the configuration of a wafer cleaning device according to the present invention. FIG. 4 illustrates a process fluid processor according to the present invention. FIGS. 5 to 7 illustrate examples of spray nozzles equipped with nozzle heating members in a process fluid processor according to the present invention. Figure 8 illustrates an example of a nozzle heating member composed of a heater jacket. FIG. 9a illustrates the ozone decomposition performance of a process fluid treatment according to the prior art, and FIG. 9b illustrates the ozone component decomposition performance of a process fluid treatment according to the present invention. Specific details for implementing the invention

[0022] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0023] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.

[0024] In addition, in various embodiments, components having the same configuration are described using the same reference numerals only in the representative embodiment, and in other embodiments, only configurations different from the representative embodiment are described.

[0025] Throughout the specification, when a part is described as being "connected (or combined)" with another part, this includes not only cases where they are "directly connected (or combined)" but also cases where they are "indirectly connected (or combined)" with other members in between. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0026] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0027] FIG. 1 illustrates the layout of a semiconductor manufacturing facility (1) according to the present invention. The semiconductor manufacturing facility (1) according to the present invention includes an index module (10) for handling a wafer fed into the semiconductor manufacturing facility (1) and a process processing module (20) having a wafer cleaning device (30) for performing cleaning treatment on the wafer.

[0028] The index module (10) has a load port (11) and a transfer frame (14). The load port (11), the transfer frame (14), and the process processing module (20) are arranged sequentially in a line. Hereinafter, the direction in which the load port (11), the transfer frame (14), and the process processing module (20) are arranged is referred to as the first direction (2). The direction perpendicular to the first direction (2) when viewed from above is referred to as the second direction (3), and the direction perpendicular to the plane containing the first direction (2) and the second direction (3) is referred to as the third direction (4).

[0029] A carrier (13) containing a wafer is placed in a load port (11). Multiple load ports (11) are provided and arranged in a line along a second direction (3). In FIG. 1, four load ports (11) are shown provided. However, the number of load ports (11) may increase or decrease depending on conditions such as the process efficiency and footprint of the process processing module (20). A slot (not shown) is formed in the carrier (13) to support the edge of the wafer. Multiple slots are provided along a third direction (4), and wafers are positioned within the carrier (13) to be stacked spaced apart from each other along the third direction (4). A Front Opening Unified Pod (FOUP) may be used as the carrier (13).

[0030] The process processing module (20) has a buffer unit (22), a transfer chamber (25), and a process chamber (26). The transfer chamber (25) is arranged so that its length direction is parallel to the first direction (2). Along the second direction (3), process chambers (26) are arranged on one side and the other side of the transfer chamber (25), respectively. The process chambers (26) located on one side of the transfer chamber (25) and the process chambers (26) located on the other side of the transfer chamber (25) are provided to be symmetrical with respect to the transfer chamber (25). Some of the process chambers (26) are arranged along the length direction of the transfer chamber (25). Additionally, some of the process chambers (26) are arranged to be stacked on top of each other. That is, on one side of the transfer chamber (25), the process chambers (26) can be arranged in an AXB arrangement (where A and B are each natural numbers greater than or equal to 1). Here, A is the number of process chambers (26) provided in a row along the first direction (2), and B is the number of process chambers (26) provided in a row along the third direction (4). When four or six process chambers (26) are provided on one side of the transfer chamber (25), the process chambers (26) may be arranged in a 2 x 2 or 3 x 2 arrangement. The number of process chambers (26) may increase or decrease. Unlike the above, the process chambers (26) may be provided only on one side of the transfer chamber (25). Also, unlike the above, the process chambers (26) may be provided in a single layer on one side and both sides of the transfer chamber (25).

[0031] A buffer unit (22) is positioned between the transfer frame (14) and the transfer chamber (25). The buffer unit (22) provides a space for the wafer to stay before being transferred between the transfer chamber (25) and the transfer frame (14). The buffer unit (22) is provided with slots (not shown) on which the wafer is placed, and multiple slots (not shown) are provided spaced apart from each other along a third direction (4). In the buffer unit (22), the surface facing the transfer frame (14) and the surface facing the transfer chamber (25) are each open.

[0032] The transfer frame (14) transports a wafer between a carrier (13) seated in a load port (11) and a buffer unit (22). The transfer frame (14) is provided with an index rail (17) and an index robot (16). The index rail (17) is provided with its longitudinal direction parallel to the second direction (3). The index robot (16) is installed on the index rail (17) and moves linearly along the index rail (17) in the second direction (3). The index robot (16) has a base (16a), a body (16b), and an index arm (16c). The base (16a) is installed to be movable along the index rail (17). The body (16b) is coupled to the base (16a). The body (16b) is provided to be movable along the third direction (4) on the base (16a). Additionally, the body (16b) is provided to be rotatable on the base (16a). The index arm (16c) is coupled to the body (16b) and is provided to be able to move forward and backward relative to the body (16b). Multiple index arms (16c) are provided so that each is individually driven. The index arms (16c) are arranged to be stacked spaced apart from each other along the third direction (4). Some of the index arms (16c) may be used when transporting wafers from the process processing module (20) to the carrier (13), and others may be used when transporting wafers from the carrier (13) to the process processing module (20). This prevents particles generated from the wafer before processing from adhering to the wafer after processing during the process of the index robot (16) receiving and receiving wafers.

[0033] The transfer chamber (25) transfers wafers between the buffer unit (22) and the process chamber (26), and between the process chambers (26). The transfer chamber (25) is provided with a guide rail (29) and a main robot (24). The guide rail (29) is positioned so that its longitudinal direction is parallel to the first direction (2). The main robot (24) is installed on the guide rail (29) and moves linearly along the first direction (2) on the guide rail (29). The main robot (24) has a base (24a), a body (24b), and a main arm (24c). The base (24a) is installed to be movable along the guide rail (29). The body (24b) is coupled to the base (24a). The body (24b) is provided to be movable along the third direction (4) on the base (24a). Additionally, the body (24b) is provided to be rotatable on the base (24a). The main arm (24c) is coupled to the body (24b) and is provided to be able to move forward and backward relative to the body (24b). Multiple main arms (24c) are provided so that each is individually driven. The main arms (24c) are arranged to be stacked spaced apart from each other along the third direction (4). The main arm (24c) used when transferring a wafer from the buffer unit (22) to the process chamber (26) and the main arm (24c) used when transferring a wafer from the process chamber (26) to the buffer unit (22) may be different from each other.

[0034] The process processing module (20) is provided with a wafer cleaning device (30) that performs a cleaning process on a wafer. The wafer cleaning device (30) includes a process chamber (26), a configuration for storing a process fluid supplied to the process chamber (26), processing the process fluid recovered after use in the process chamber (26), and discharging the process fluid after processing is completed. The configuration of the wafer cleaning device (30) according to the present invention will be described below with reference to FIGS. 2 and FIGS. 3.

[0035] A wafer cleaning device (30) includes a process fluid supplyer (31) that supplies a process fluid for cleaning a wafer, a process chamber (26) that performs cleaning treatment on a wafer by supplying the process fluid to the wafer, and a process fluid processor (32) that processes the process fluid used for cleaning the wafer. Referring to FIG. 2, the process chamber (26) is connected to the process fluid supplyer (31) and the process fluid processor (32). The process fluid may be ozone water or a mixture of ozone water and a chemical solution. The process fluid supplyer (31) supplies the process fluid to the supply nozzle (100) through the supply pipe (110). The process fluid processor (32) is connected to the process chamber (26) through the first discharge pipe (210). Additionally, the process fluid processor (32) is connected to the process fluid supplyer (310) through the second discharge pipe (220).

[0036] The process chamber (26) includes a supply nozzle (100) that supplies process fluid to a wafer and a recovery cup (200) that recovers the process fluid supplied to the wafer. Although FIG. 2 shows a process fluid supply unit (31) connected to one process chamber (26), as in FIG. 3, the process fluid supply unit (31) may be connected to two or more process chambers (26). That is, the process chamber (26) is provided in multiple numbers, the process fluid supply unit (31) supplies process fluid to multiple process chambers (26), and the process fluid processor (32) can process the process fluid recovered from multiple process chambers.

[0037] The process fluid supplied to the substrate through the supply nozzle (100) and processed is collected in the recovery cup (200) and then discharged through the first discharge pipe (210) connected to the recovery cup (200). A separate recovery pipe is connected to the first discharge pipe (210) and the process fluid supply unit (31) so that the process fluid collected through the recovery cup (200) can be supplied to the process fluid supply unit (31).

[0038] FIG. 4 illustrates a process fluid processor (32) according to the present invention. FIG. 5 to 7 illustrate an example of a spray nozzle (320) equipped with a nozzle heating member (330) in the process fluid processor (32) according to the present invention.

[0039] A process fluid processor (32) according to the present invention comprises a housing (310) forming an internal space for receiving a process fluid, a spray nozzle (320) for spraying a process fluid containing an ozone component into the internal space in the form of a mist, and a nozzle heating member (330) mounted on the spray nozzle (320) for heating the process fluid sprayed through the spray nozzle (320).

[0040] The process fluid handler (32) is connected to the process chamber (26) through the first discharge pipe (210), and the spray nozzle (320) is connected to the first discharge pipe (210) so that the process fluid introduced through the first discharge pipe (210) can be sprayed into the internal space in the form of mist. The spray nozzle (320) causes the process fluid to flow in the internal flow path under a high-pressure state and causes the process fluid to flow in multiple directions in the form of small particles (mist) when discharged to the outside.

[0041] Additionally, the process fluid processor (32) is connected to the process fluid supplier (31) through the second discharge pipe (220), and the spray nozzle (320) is connected to the second discharge pipe (220) so that the process fluid introduced through the second discharge pipe (220) can be sprayed into the internal space of the housing (310) in the form of mist.

[0042] According to the present invention, by equipping a nozzle heating member (330) to a spray nozzle (320) that sprays a process fluid in the form of a mist, the process fluid containing ozone components can be sprayed in the form of a high-temperature mist, thereby effectively decomposing the ozone components of the process fluid. According to the present invention, by using a spray nozzle (320) instead of a porous tube, the process fluid containing ozone components is sprayed in the form of a mist, so the surface area in contact with air can be increased, thereby promoting the ozone water decomposition reaction. However, while the decomposition of ozone water is promoted as the temperature increases, using a spray nozzle (320) lowers the temperature due to the release of heat of vaporization. Therefore, the present invention can rapidly decompose ozone components within the process fluid by using a nozzle heating member (330) to heat the spray nozzle (320) while spraying ozone water in the form of a mist.

[0043] According to an embodiment of the present invention, the nozzle heating member (330) may be provided as a heating wire (332) mounted in the internal flow path of the spray nozzle (320). Referring to FIG. 5, the nozzle heating member (330) may be configured such that the heating wire (332) is wound in the internal flow path through which the process fluid passes within the spray nozzle (320). The nozzle heating member (330) can heat the process fluid sprayed through the spray nozzle (320) and the spray nozzle (320), and the process fluid heated by the nozzle heating member (330) is sprayed in the form of a mist. Here, since the process fluid is sprayed in the form of a mist at a high temperature, it maintains a high temperature despite the loss of heat of vaporization, thereby promoting the ozone water decomposition reaction and effectively decomposing ozone components in the process fluid. Since the heating wire (332) mounted in the internal flow path of the spray nozzle (320) directly heats the process fluid, there is an advantage in terms of heat transfer efficiency. Meanwhile, the heating element (332) may be embedded in the spray nozzle (320).

[0044] According to another embodiment of the present invention, the nozzle heating member (330) may be provided as a heating wire (332) mounted on the outside of the spray nozzle (320). Referring to FIG. 6, the heating wire (332) may be wound along the outside of the spray nozzle (320). The heating wire (332) may heat the process fluid indirectly through the spray nozzle (320). When the heating wire (332) is mounted on the outside of the spray nozzle (320) as in FIG. 6, it is advantageous in terms of the lifespan of the heating wire (332) because the heating wire (332) does not come into direct contact with the process fluid.

[0045] According to another embodiment of the present invention, the nozzle heating member (330) may be provided as a heater jacket (334) that surrounds the outside of the spray nozzle (320). As shown in FIG. 7, the heater jacket (334) is provided in a cylindrical shape that is mounted on the outside of the spray nozzle (320) and may have a heating wire (332) inside. Referring to FIG. 8, the heater jacket (334) is configured to be fixed to the spray nozzle (320) and may be connected to an external power source with the heating wire (332) mounted inside the heater jacket (334). The spray nozzle (320) is heated by the heating wire (332) provided inside the heater jacket (334), and the process fluid can be heated through the spray nozzle (320). When the nozzle heating member (330) is configured with a heater jacket (334) in the form of Fig. 8, the nozzle heating member (330) can be more easily attached to and detached from the spray nozzle (320) from the operator's perspective.

[0046] According to an embodiment of the present invention, the spray nozzle (320) may be made of SUS316 stainless steel. The spray nozzle (320) may be heated to 40 to 50 degrees, and it needs to be made of a material that has high heat transfer efficiency to the process fluid and high chemical resistance to ozone. SUS316 stainless steel is a material that satisfies these conditions and is suitable as a material for the spray nozzle (320) according to the present invention.

[0047] According to an embodiment of the present invention, the process fluid processor (32) further includes a circulation line (370) that provides a path for the process fluid contained in the housing (310) to circulate. The process fluid circulated along the circulation line (370) may be sprayed in the form of a mist through a spray nozzle (320). The circulation line (370) is equipped with a pump (375) that provides power for the circulation of the process fluid. The pump (375) may be located around an inlet where the process fluid enters the circulation line (370). The pump (375) creates a pressure that allows the process fluid to flow and enables the process fluid to flow effectively while forming turbulence. The decomposition of ozone components contained in the process fluid may be promoted by the pressure of the pump (375). Meanwhile, a heater (not shown) may be configured in the circulation line (370), but may be omitted.

[0048] When the ozone contained in the process fluid is decomposed after the set time has elapsed, the discharge valve (365) on the process fluid discharge line (360) connected to the lower part of the housing (310) is opened, and the process fluid is discharged from the housing (310). The gas inside the housing (310) can be discharged through the gas discharge line (350) by opening the gas discharge valve (355) on the gas discharge line (350). The discharge of gas inside the housing (310) may also occur while the ozone is decomposing.

[0049] According to an embodiment of the present invention, the process fluid processor (32) may further include a gas supply pipe (340) that supplies a decomposition gas that promotes the decomposition of ozone components in the process fluid. Additionally, the process fluid processor (32) may further include a gas heating member (345) mounted on the gas supply pipe (340) to heat the decomposition gas supplied into the internal space. The gas supply pipe (340) supplies a decomposition gas into the internal space that reacts with the ozone components of the process fluid to promote the decomposition of the ozone components. The decomposition gas may be air containing oxygen. Furthermore, according to the present invention, by heating the decomposition gas using the gas heating member (345), the reaction temperature between the decomposition gas and the process fluid can be increased, and thus the decomposition of ozone components can be promoted.

[0050] FIG. 9a illustrates the ozone decomposition performance of a process fluid treatment according to the prior art, and FIG. 9b illustrates the ozone component decomposition performance of a process fluid treatment according to the present invention.

[0051] FIG. 9a shows the ozone concentration in the process fluid when a conventional method (a method in which the process fluid is heated using a heater provided in the circulation line after being discharged by a striking plate) is applied, and FIG. 9b shows the ozone concentration in the process fluid when the process fluid is sprayed in the form of a mist using a spray nozzle (320) equipped with a nozzle heating member (330) as in the present invention. Referring to FIG. 9a, the ozone concentration contained in the process fluid initially introduced through the first discharge pipe (210) is about 100 ppm, and when the conventional method is applied, the ozone water concentration in the circulation line (370) is about 24 ppm, and the ozone water concentration in the process fluid discharge line is about 18 ppm. Referring to FIG. 9b, the concentration of ozone contained in the process fluid initially introduced through the first discharge pipe (210) is approximately 100 ppm. When the process fluid is sprayed in the form of mist using a spray nozzle (320) equipped with a nozzle heating member (330) as in the present invention, the ozone water concentration in the circulation line (370) without a heater is approximately 19 ppm, and the ozone water concentration in the process fluid discharge line (360) is approximately 9 ppm. Through this, it is confirmed that the decomposition efficiency of the ozone component in the process fluid is high when the process fluid is sprayed in the form of mist using a spray nozzle (320) equipped with a nozzle heating member (330) as in the present invention.

[0052] The embodiments and drawings attached to this specification merely clearly illustrate a part of the technical concept included in the present invention, and it is obvious that variations and specific embodiments that can be easily deduced by a person skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention are all included within the scope of the rights of the present invention.

[0053] Accordingly, the scope of the present invention should not be limited to the described embodiments, and all things equivalent to or having equivalent variations to the claims set forth below, as well as the claims set forth below, shall be considered to fall within the scope of the concept of the present invention. Explanation of the symbols

[0054] 1: Semiconductor manufacturing equipment 10: Index Module 20: Process processing module 26: Process Chamber 30: Wafer cleaning device 31: Process fluid supply 32: Process Fluid Handler 100: Supply nozzle 200: Recovery cup 110: Supply pipe 210: 1st discharge pipe 220: Second discharge pipe 310: Housing 320: Spray nozzle 330: Nozzle heating element 332: Heating element 334: Heater Jacket 340: Gas supply pipe 345: Gas heating element 350: Gas exhaust line 355: Gas release valve 360: Process fluid discharge line 365: Discharge valve 370: Circular line 375: Pump

Claims

Claim 1 A process fluid processor for processing a process fluid used for cleaning a wafer in a semiconductor manufacturing facility, comprising: a housing forming an internal space for receiving the process fluid; a spray nozzle for spraying a process fluid containing an ozone component into the internal space in the form of a mist; and a nozzle heating member for heating the process fluid passing through the spray nozzle, wherein the nozzle heating member is provided as a cylindrical heater jacket surrounding the outside of the spray nozzle, and the heater jacket is mounted so as to be detachably attached to the spray nozzle, and the spray nozzle comprises a first flow path portion, a second flow path portion narrower than the first flow path portion, and a third flow path portion wider than the second flow path portion, wherein the process fluid is sprayed by sequentially passing through the first flow path portion, the second flow path portion, and the third flow path portion, and a heating wire wound multiple times on the outer surface of the spray nozzle is provided inside the heater jacket, and the heating wire is wound to surround the outside of the first flow path portion, the second flow path portion, and the third flow path portion of the spray nozzle. Claim 2 A process fluid handler according to claim 1, wherein the spray nozzle is heated to 40 to 50 degrees and the spray nozzle is made of SUS316 stainless steel. Claim 3 A process fluid processor according to claim 1, further comprising a circulation line providing a path for the process fluid contained in the housing to circulate, wherein the process fluid circulated along the circulation line is sprayed in the form of a mist through the spray nozzle. Claim 4 A process fluid treatment device according to claim 1, further comprising a gas supply pipe for supplying a decomposition gas that promotes the decomposition of ozone components in the process fluid. Claim 5 A process fluid processor according to claim 4, further comprising a gas heating member mounted on the gas supply pipe to heat the decomposition gas supplied into the internal space. Claim 6 A wafer cleaning device for semiconductor manufacturing equipment comprises: a process fluid supplyer for supplying a process fluid for cleaning treatment of the wafer; a process chamber for performing cleaning treatment on the wafer by supplying the process fluid to the wafer; and a process fluid processor for processing the process fluid used for cleaning the wafer, wherein the process fluid processor comprises: a housing forming an internal space for receiving the process fluid; and a spray nozzle for spraying a process fluid containing an ozone component into the internal space in the form of a mist. A wafer cleaning device comprising a nozzle heating member for heating a process fluid passing through a spray nozzle, wherein the nozzle heating member is provided as a cylindrical heater jacket that surrounds the outside of the spray nozzle, and the heater jacket is mounted so as to be detachably attached to the spray nozzle, and the spray nozzle comprises a first flow path portion, a second flow path portion narrower than the first flow path portion, and a third flow path portion wider than the second flow path portion, wherein the process fluid is sprayed by sequentially passing through the first flow path portion, the second flow path portion, and the third flow path portion, and a heating wire wound multiple times on the outer surface of the spray nozzle is provided inside the heater jacket, and the heating wire is wound to surround the outside of the first flow path portion, the second flow path portion, and the third flow path portion. Claim 7 A wafer cleaning device according to claim 6, wherein the process fluid handler is connected to the process chamber through a first discharge pipe, and the spray nozzle is connected to the discharge pipe to spray the process fluid introduced through the first discharge pipe into the internal space in the form of a mist. Claim 8 A wafer cleaning device according to claim 6, wherein the process fluid supply unit is connected to the process fluid processor through a second discharge pipe, and the spray nozzle is connected to the second discharge pipe to spray the process fluid introduced through the second discharge pipe into the internal space in the form of a mist. Claim 9 A wafer cleaning device according to claim 6, wherein the process chambers are provided in plurality, the process fluid supply unit supplies the process fluid to the plurality of process chambers, and the process fluid processor processes the process fluid recovered from the plurality of process chambers. Claim 10 In claim 6, the wafer cleaning device wherein the spray nozzle is heated to 40 to 50 degrees and the spray nozzle is made of SUS316 stainless steel. Claim 11 A wafer cleaning apparatus according to claim 6, further comprising a circulation line that provides a path for the process fluid contained in the housing to circulate. Claim 12 A wafer cleaning apparatus according to claim 6, further comprising a gas supply pipe for supplying a decomposition gas that promotes the decomposition of ozone components in the process fluid. Claim 13 A wafer cleaning device according to claim 12, further comprising a gas heating member mounted on the gas supply pipe to heat the decomposition gas supplied to the internal space. Claim 14 A semiconductor manufacturing facility comprises: an index module for handling a wafer fed into the semiconductor manufacturing facility; and a process processing module comprising a wafer cleaning device for performing a cleaning treatment on the wafer, wherein the wafer cleaning device comprises: a process fluid supplyer for supplying a process fluid for cleaning treatment of the wafer; a process chamber for performing a cleaning treatment on the wafer by supplying the process fluid to the wafer; and a process fluid processor for processing the process fluid used for cleaning the wafer, wherein the process fluid processor comprises: a housing forming an internal space for receiving the process fluid; and a spray nozzle for spraying a process fluid containing an ozone component into the internal space in the form of a mist. A semiconductor manufacturing facility comprising a nozzle heating member mounted on the spray nozzle to heat the process fluid passing through the spray nozzle, wherein the nozzle heating member is provided as a cylindrical heater jacket that surrounds the outside of the spray nozzle, and the heater jacket is mounted so as to be detachably attached to the spray nozzle, and the spray nozzle comprises a first flow path portion, a second flow path portion narrower than the first flow path portion, and a third flow path portion wider than the second flow path portion, wherein the process fluid is sprayed by sequentially passing through the first flow path portion, the second flow path portion, and the third flow path portion, and a heating wire is provided within the heater jacket and wound multiple times on the outer surface of the spray nozzle, and the heating wire is wound to surround the outside of the first flow path portion, the second flow path portion, and the third flow path portion.

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