Device and method for drying substrate

Abstract

The technical concept of the present invention provides a substrate drying apparatus comprising: an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration modules each configured to generate ultrasound having different frequencies, a fixing module disposed on the plurality of vibration modules and configured to fix a wafer, and a plurality of vibration devices disposed on the chamber space.

Description

Technology Field

[0001] The technical concept of the present invention relates to a substrate drying apparatus and a method thereof. More specifically, it relates to a substrate drying apparatus and a method thereof comprising a vibration device that applies ultrasonic vibrations. Background Technology

[0002] To manufacture semiconductor devices, desired patterns can be formed on a wafer through various processes such as lithography, etching, ashing, and thin film deposition. Various processing solutions are used in each process, and contaminants such as particles are generated depending on the process results. To remove these contaminants, a wafer cleaning process is performed before and after each process.

[0003] In the cleaning process, after the wafer is treated with chemicals and a rinse solution, a drying process may be performed. In the drying process, the rinse solution remaining on the wafer can be removed by an organic solvent such as isopropyl alcohol. Recently, as patterns formed on wafers have become finer, the aspect ratio of the patterns has increased. Consequently, organic solvents remain in the spaces between the patterns, and a problem has arisen where the patterns collapse. Accordingly, a drying process using a supercritical fluid has been proposed. The problem to be solved

[0004] The problem that the technical concept of the present invention aims to solve is to provide a substrate drying device capable of shortening the drying process time using a supercritical fluid.

[0005] Another problem that the technical concept of the present invention aims to solve is to provide a substrate drying method that can shorten the drying process time using a supercritical fluid. means of solving the problem

[0006] To solve the above-mentioned problem, the technical concept of the present invention provides a substrate drying apparatus comprising: an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration modules each configured to generate ultrasound having different frequencies, a fixing module disposed on the plurality of vibration modules and configured to fix a wafer, and a plurality of vibration devices disposed on the chamber space.

[0007] To solve the above-mentioned problem, the technical concept of the present invention provides a substrate drying apparatus comprising: an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; a plurality of fixing modules disposed on the chamber space and configured to fix a wafer; and a plurality of vibration modules disposed on the chamber space and configured to generate ultrasound having different frequencies.

[0008] To solve the above-mentioned problem, the technical concept of the present invention provides a substrate drying method comprising: a step of preparing a wafer provided on an upper surface with a cleaning solution in a chamber space; a step of introducing a supercritical fluid into the chamber space through an injection port penetrating an upper chamber body; a step of dissolving the cleaning solution in the supercritical fluid using a plurality of vibration modules; and a step of discharging the supercritical fluid and the cleaning solution through an discharge port penetrating a lower chamber body. Effects of the invention

[0009] According to exemplary embodiments of the present invention, a substrate drying device may include a vibration unit that generates ultrasonic waves having different frequencies. The mixing time of the supercritical fluid and the cleaning solution can be reduced through ultrasonic vibration by the vibration unit. This can improve the efficiency of the semiconductor device manufacturing process. Additionally, particles of the cleaning solution components can be removed through ultrasonic vibration. Brief explanation of the drawing

[0010] FIG. 1 is a cross-sectional view showing a substrate drying apparatus according to an exemplary embodiment of the present invention. FIGS. 2a and 2b are drawings illustrating a first vibration device according to an exemplary embodiment of the present invention. FIG. 2a is a perspective view illustrating the first vibration device, and FIG. 2b is a plan view illustrating the first vibration device. FIG. 3 is a drawing showing a second vibration device according to an exemplary embodiment of the present invention. FIGS. 4a to 4c are drawings showing the arrangement of a vibration device according to an exemplary embodiment of the present invention. FIG. 4a is a plan view showing the arrangement of a first vibration device, FIG. 4b is a bottom view showing the arrangement of a second vibration device, and FIG. 4c is a bottom view showing the arrangement of the first vibration device and the second vibration device. FIGS. 5a to 5c are cross-sectional views showing a substrate drying apparatus according to an exemplary embodiment of the present invention. FIG. 6 is a plan view showing a wave transmission plate according to an exemplary embodiment of the present invention. FIG. 7 is a conceptual diagram showing a substrate drying system according to an exemplary embodiment of the present invention. FIG. 8 is a flowchart illustrating a substrate drying method according to an exemplary embodiment of the present invention. FIGS. 9a to 9d are cross-sectional views illustrating each step of a substrate drying method according to an exemplary embodiment of the present invention. Specific details for implementing the invention

[0011] Hereinafter, embodiments of the technical concept of the present invention will be described in detail with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted.

[0012] FIG. 1 is a cross-sectional view showing a substrate drying apparatus (100) according to an exemplary embodiment of the present invention. FIG. 2a and FIG. 2b are drawings showing a first vibration device (140a) according to an exemplary embodiment of the present invention. FIG. 2a is a perspective view showing the first vibration device (140a), and FIG. 2b is a plan view showing the first vibration device (140a).

[0013] Referring to FIG. 1, a substrate drying device (100) may include an upper chamber body (110), a lower chamber body (120), a support plate (130), and a plurality of vibration devices (140a, 140b). The upper chamber body (110) may include an inlet (111) configured to introduce a supercritical fluid into a chamber space (CS). The inlet (111) may penetrate the upper chamber body (110). In some embodiments, the upper chamber body (110) may be made of stainless steel. The supercritical fluid may include, for example, carbon dioxide in a supercritical fluid state.

[0014] The lower chamber body (120) may include an outlet (121) configured to discharge a supercritical fluid out of the chamber space (CS). The outlet (121) may penetrate the lower chamber body (120). In some embodiments, the lower chamber body (120) may be made of stainless steel.

[0015] The upper chamber body (110) and the lower chamber body (120) can be configured to close the chamber space (CS) by bringing the upper chamber body (110) into contact with the lower chamber body (120), and to open the chamber space (CS) by separating the upper chamber body (110) from the lower chamber body (120). That is, the upper chamber body (110) and the lower chamber body (120) can form an open chamber body.

[0016] The substrate drying device (100) may be configured such that the pressure and temperature within the chamber space (CS) are each greater than the critical pressure and critical temperature of the supercritical fluid. For example, the critical pressure of carbon dioxide may be about 74 bar and the critical temperature may be about 31°C. The temperature within the chamber space (CS) may be, for example, about 31°C to about 100°C, and the pressure within the chamber space (CS) may be about 74 bar to about 100 bar.

[0017] A support plate (130) may be placed on the lower chamber body (120). The support plate (130) may be extended in a second horizontal direction (Y direction) parallel to the wafer (150). The support plate (130) may be in the shape of a rectangular parallelepiped, but is not limited thereto, and may be in the shape of a cylinder, for example, such as the wafer (150).

[0018] First vibration devices (140a), and / or second vibration devices (140b) may be disposed on a support plate (130). Each of the first vibration devices (140a) may include a first fixed module (141a) and a plurality of vibration modules (143), and each of the second vibration devices (140b) may include a second fixed module (141b) and a plurality of vibration modules (143). In an exemplary embodiment, the first fixed module (141a) and the plurality of vibration modules (143) may be combined with each other so that each of the first vibration devices (140a) is formed integrally, and the second fixed module (141b) and the plurality of vibration modules (143) may be combined with each other so that each of the second vibration devices (140b) is formed integrally. In some embodiments, each first vibration device (140a) may be symmetric with respect to a virtual centerline (A-A') passing through the center of the wafer (150). In some embodiments, each second vibration device (140b) may be symmetric with respect to a virtual centerline (A-A') passing through the center of the wafer (150). A detailed description of the first vibration devices (140a) and the second vibration devices (140b) will be provided below.

[0019] A plurality of vibration modules (143) are disposed on a support plate (130), and the lower surface of the plurality of vibration modules (143) may come into contact with the upper surface of the support plate (130). Each of the plurality of vibration modules (143) may be configured to generate ultrasonic waves having different frequencies. In an exemplary embodiment, the plurality of vibration modules (143) included in each of the first vibration device (140a) and the second vibration device (140b) are at least three, and each of the plurality of vibration modules (143) may be configured to generate ultrasonic waves having different frequencies. In an exemplary embodiment, the plurality of vibration modules are at least three, and the plurality of vibration modules are configured to generate ultrasonic waves having different frequencies, at least one of the ultrasonic waves may have a frequency in the range of 20 kHz or more and less than 60 kHz, at least another of the ultrasonic waves may have a frequency in the range of 60 kHz or more and less than 100 kHz, and at least yet another of the ultrasonic waves may have a frequency in the range of 100 kHz or more. In some embodiments, the ultrasonics may be selected to avoid the resonant frequency of the pattern formed on the wafer (150). Thus, even when the critical dimension between the patterns formed on the wafer (150) varies, ultrasonic vibrations by a plurality of vibration devices (140a, 140b) may be applied to the wafer (150). Although FIG. 1 is illustrated as having a substrate drying device (100) that includes both a first vibration device (140a) and a second vibration device (140b), it is not limited thereto and may include only the first vibration device (140a), for example, as described later with reference to FIGS. 4a to 4c.

[0020] Multiple vibration devices (140a, 140b) apply ultrasonic vibrations to the wafer (150), thereby shortening the mixing time of the supercritical fluid and the cleaning solution (IA). Accordingly, the time of the drying process performed before and after the various processes for manufacturing a semiconductor device is shortened, and the efficiency of the semiconductor device manufacturing process can be improved. In addition, particles of the cleaning solution (IA) components that frequently occur during the drying process using the supercritical fluid are efficiently removed by ultrasonic vibrations, thereby improving the reliability of the semiconductor device.

[0021] Fixed modules (141a, 141b) may be placed on a plurality of vibration modules (143). A wafer (150) may be seated and fixed on the fixed modules (141a, 141b). At this time, the shape of the first fixed module (141a) of the first vibration device (140a) and the second fixed module (141b) of the second vibration device (140b) may be different.

[0022] Referring to FIG. 2a, in an exemplary embodiment, a first vibrating device (140a) is positioned along the edge of a wafer (150), and a first fixing module (141a) may be in the form of a gripping pin that grips the side of the wafer (150). In an exemplary embodiment, the first fixing module (141a) in the form of a gripping pin may be composed of a first part (S1) and a second part (S2) having different vertical (Z-direction) lengths. In an exemplary embodiment, the vertical length of the first part (S1) is longer than the vertical length of the second part (S2), and the difference (d1) between the vertical (Z-direction) length of the first part (S1) and the vertical (Z-direction) length of the second part (S2) may be about 1 mm to about 3 mm. In this case, the wafer (150) is placed on a second part (S2) with a shorter vertical (Z-direction) length, and the side of the wafer (150) can be supported and fixed by the first part (S1). In some embodiments, the wafer (150) may be additionally fixed using electrostatic or vacuum. In some embodiments, the vertical (Z-direction) length of the wafer (150) may be smaller than the difference between the vertical length of the first part (S1) and the vertical length of the second part (S2).

[0023] Referring to FIG. 2b, the boundary between the first part (S1) and the second part (S2) of the first fixed module (141a) in the XY plane may have an arc shape. In this case, the boundary between the first part (S1) and the second part (S2) having an arc shape and the wafer (150) may have the same curvature.

[0024] FIG. 3 is a drawing showing a second vibration device (140b) according to an exemplary embodiment of the present invention.

[0025] Referring to FIGS. 1 and FIGS. 3, in an exemplary embodiment, the second vibration device (140b) is positioned below the wafer (150), and the second fixing module (141b) may be in the form of a support pin that supports the lower surface of the wafer (150). In this case, the second fixing module (141b) may be in the form of a cylinder with a flat upper surface, but is not limited thereto. The wafer (150) may be supported by the upper surface of the second fixing module (141b). In FIG. 3, the second fixing module (141b) is shown positioned on the vibration module (143) while in contact with the upper surface of the vibration modules (143), but is not limited thereto, and, for example, the second fixing module (141b) may cover the vibration module (143).

[0026] In an exemplary embodiment, the contact surface of the fixed module (141a, 141b) in contact with the wafer (150) may include a viscoelastic material. The viscoelastic material may be a polymer material such as, for example, polytetrafluoroethylene (PTFE). However, the present invention is not limited thereto. In some embodiments, the contact surface of the fixed module (141a, 141b) may include Teflon so that the problem of particles or scratches resulting from contact between the wafer (150) and the fixed module (141a, 141b) can be prevented.

[0027] FIGS. 4a to 4c are drawings showing the arrangement of a plurality of vibration devices (140a, 140b) according to an exemplary embodiment of the present invention. FIG. 4a is a plan view showing the arrangement of a first vibration device (140a), FIG. 4b is a bottom view showing the arrangement of a second vibration device (140b), and FIG. 4c is a bottom view showing the arrangement of a first vibration unit (140a) and a second vibration device (140b).

[0028] Referring to FIG. 4a, the first vibration devices (140a) may be spaced apart from each other along the circumference of the wafer (150). In this case, the first fixing module (141a) may be a gripping pin that grips the side of the wafer (150), as described with reference to FIG. 2a. In some embodiments, the first fixing modules (141a) may each be spaced equally apart on the circumference of the wafer (150). In some embodiments, there may be at least six first fixing modules (141a).

[0029] Referring to FIG. 4b, the second vibration device (140b) may be positioned on the lower part of the wafer (150). Each of the second vibration devices (140b) may be spaced apart from one another. In this case, the second fixing module (141b) may be a support pin that supports the lower part of the wafer (150), as described with reference to FIG. 3. In an exemplary embodiment, there are at least four second vibration devices (140b), at least one of the plurality of second vibration devices (140b) may be positioned at the center of the lower part of the wafer (150), and the remaining plurality of second vibration devices (140b), excluding the one second vibration device (140b) positioned at the center, may be positioned at equal intervals on a circumference centered on the one second vibration device (140b) positioned at the center. For example, when four second vibration devices (140b) are placed on the bottom of a wafer (150), one second vibration device (140b) may be placed at the center of the bottom of the wafer (150), and the remaining three second vibration devices (140b) may be placed at equal intervals on a circumference centered on the one second vibration device (140b) placed at the center of the wafer (150). In an exemplary embodiment, the distances (R1, R2, R3) from the one second vibration device (140b) placed at the center of the wafer (150) to the remaining three second vibration devices (140b) may be equal to each other. In an exemplary embodiment, the distances (R1, R2, R3) may be about 70 mm to about 130 mm, but are not limited thereto.

[0030] Referring to FIG. 4c, the first vibration devices (140a) may be arranged along the circumference of the wafer (150), and at the same time, the second vibration devices (140b) may be arranged on the bottom of the wafer (150).

[0031] In some embodiments, the first vibration devices (140a) may be at least six, and the second vibration devices (140b) may be at least four. A plurality of first vibration devices (140a) and a plurality of second vibration devices (140b) support the wafer (150) and apply ultrasonic vibrations, thereby shortening the mixing time of the cleaning solution and supercritical fluid on the wafer (150).

[0032] FIGS. 5a to 5c are cross-sectional views showing substrate drying devices (200a, 200b, 200c) according to exemplary embodiments of the present invention. Since the substrate drying devices (200a, 200b, 200c) illustrated in FIGS. 5a to 5c are similar to the substrate drying device (100) described with reference to FIG. 1, the following description will focus on the differences.

[0033] Referring to FIG. 5a, the substrate drying device (200a) may include an upper chamber body (210), a lower chamber body (220), a support plate (230), a plurality of fixed modules (240), and a plurality of vibration modules (250).

[0034] A plurality of fixing modules (240) can fix the wafer (260). In FIG. 5a, the plurality of fixing modules (240) are shown in the form of support pins that are positioned below the wafer (260) to support the wafer (260), but are not limited thereto; for example, they may be gripping pins that are positioned along the edge of the wafer (260) and grip the side of the wafer (260). A plurality of vibration modules (250) may be positioned on the lower surface (210a) of the upper chamber body (210). The vibration modules (250) may be configured to generate ultrasonic waves having different frequencies. For example, each of the vibration modules (250) may include a plurality of ultrasonic vibrators. In some embodiments, each of the vibration modules (250) may be composed of at least three ultrasonic vibrators capable of generating ultrasonic waves having different frequencies. In an exemplary embodiment, a plurality of vibration modules (250) may be arranged to be symmetric with respect to a virtual centerline (A-A') passing through the center of the wafer (260). The plurality of vibration modules (250) can apply ultrasonic vibrations to the supercritical fluid and cleaning solution (IA) on the wafer (260) to reduce the time for the cleaning solution (IA) to dissolve in the supercritical fluid. Additionally, particles of the cleaning solution components generated during the drying process using the supercritical fluid can be removed more effectively.

[0035] Referring to FIG. 5b, the substrate drying device (200b) may include an upper chamber body (210), a lower chamber body (220), a support plate (230), a plurality of fixed modules (240), and a plurality of vibration modules (250).

[0036] A plurality of vibration modules (250) may be disposed on both side walls (210b) of the upper chamber body (210). However, they are not limited thereto and may also be disposed on both side walls (220b) of the lower chamber body (220). The vibration modules (250) may be configured to generate ultrasonic waves having different frequencies. For example, each vibration module (250) may include a plurality of ultrasonic vibrators. In an exemplary embodiment, the plurality of vibration modules (250) may be arranged to be symmetric with respect to a virtual centerline (A-A') passing through the center of the wafer (260). The plurality of vibration modules (250) can apply vibration to the supercritical fluid and cleaning liquid (IA) on the wafer (260), thereby reducing the time for the cleaning liquid (IA) to dissolve in the supercritical fluid. Additionally, particles of the cleaning liquid component generated during the drying process using the supercritical fluid can be removed more effectively.

[0037] In FIGS. 5a and 5b, the substrate drying device (200a) is shown to have a plurality of vibration modules (250) only on the lower surface (210a) of the upper chamber body (210), and the substrate drying device (200b) is shown to have a plurality of vibration modules (250) only on both side walls (210b) of the upper chamber body (210), but this is not limited thereto, and for example, a plurality of vibration modules (250) may be included on both the lower surface (210a) of the upper chamber body (210) and both side walls (210b) of the upper chamber body (210).

[0038] Referring to FIG. 5c, the substrate drying device (200c) may include an upper chamber body (210), a lower chamber body (220), a support plate (230), a plurality of fixed modules (240), a plurality of vibration modules (250), and a wave transmission plate (270).

[0039] In FIG. 5c, a plurality of fixed modules (240) are shown in the form of support pins that support the lower part of the wafer (260), but are not limited thereto and may, for example, be in the form of grip pins that grip the side of the wafer (260). In FIG. 5c, a plurality of vibration modules (250) are shown placed only on the lower surface (210a) of the upper chamber body (210), but are not limited thereto. For example, a plurality of vibration modules (250) may be placed on both side walls (210b) of the upper chamber body (210), or may be placed on both the lower surface (210a) and both side walls (210b). A wave transmission plate (270) may be interposed between the vibration modules (250) and the wafer (260). The side walls of the wave transmission plate (270) may be in contact with both side walls (210b) of the upper chamber body (210). The wave transmission plate (270) can mitigate the non-uniformity of ultrasonic vibrations according to the position of the vibration modules (250).

[0040] FIG. 6 is a plan view showing a wave transmission plate (270) according to an exemplary embodiment of the present invention.

[0041] Referring to FIG. 6, the wave transmission plate (270) may have a mesh-type structure. By having the wave transmission plate (270) have a mesh-type structure, the non-uniformity of ultrasonic vibration according to the position of the plurality of vibration modules (250) can be improved.

[0042] FIG. 7 is a conceptual diagram showing a substrate drying system (10) according to an exemplary embodiment of the present invention.

[0043] Referring to FIG. 7, the substrate drying system (10) may include a liquid tank (11), a condenser (14), a pump (15), a storage tank (16), a heater (17), a substrate drying device (100, 200a to 200c), and a discharge device (18). The substrate drying system (10) may further include a plurality of filters, for example, first to third filters (12a to 12c), and a plurality of valves, for example, first to fourth valves (13a to 13d).

[0044] A liquid, for example, liquid carbon dioxide, may be stored in the liquid tank (11). A condenser (14) may convert a supercritical fluid or gas into a liquid and remove impurities. A pump (15) may convert the liquid into a supercritical fluid by applying a pressure greater than the supercritical pressure to the liquid. A storage tank (16) may store the supercritical fluid. A heater (17) may maintain the supercritical fluid state by heating the supercritical fluid and maintaining the temperature of the supercritical fluid at a temperature greater than the critical temperature. The supercritical fluid may be supplied to a substrate drying device (100, 200a to 200c). In the substrate drying device (100, 200a to 200c), the supercritical fluid may dry a wafer. The supercritical fluid may dissolve a cleaning solution on the wafer. The supercritical fluid in which the liquid has been dissolved can be discharged from the substrate drying device (100, 200a to 200c) by the discharge device (18).

[0045] The first to third filters (12a to 12c) can remove impurities from a liquid or supercritical fluid. Although FIG. 7 shows a substrate drying system (10) comprising three filters, for example, the first to third filters (12a to 12c), the substrate drying system (10) may comprise a number of filters greater than or less than three.

[0046] The first to fourth valves (13a to 13d) can control the flow of a liquid or supercritical fluid. Each of the first to fourth valves (13a to 13d) may be an automatic valve whose opening and closing are controlled, for example, by an electronic signal. Although FIG. 7 shows a substrate drying system (10) comprising four valves, for example, the first to fourth valves (13a to 13d), the substrate drying system (10) may comprise a number of valves greater or less than four.

[0047] FIG. 8 is a flowchart illustrating a substrate drying method according to an exemplary embodiment of the present invention.

[0048] FIGS. 9a through 9d are cross-sectional views illustrating each step of a substrate drying method according to an exemplary embodiment of the present invention. The arrows in FIGS. 9b and 9d indicate the flow of a supercritical fluid, and the arrow in FIG. 9c indicates the direction in which ultrasonic vibrations are transmitted from a vibration module.

[0049] Referring to FIGS. 8 and 9a, a wafer (150) provided with a cleaning solution (IA) on its upper surface may be prepared within a chamber space (CS) (S1100). The cleaning solution (IA) may be, for example, isopropyl alcohol (IPA), but is not limited thereto. The wafer (150) may be, for example, a wafer (150) that has undergone an exposure process and an etching process. After the wafer (150) is prepared within the chamber space (CS), the chamber space (CS) may be closed. For example, the chamber space (CS) defined by the upper chamber body (110) and the lower chamber body (120) may be closed so that the upper chamber body (110) comes into contact with the lower chamber body (120).

[0050] Referring to FIGS. 8 and 9b, a supercritical fluid can be introduced into a chamber space (CS) (S1200). The supercritical fluid can be introduced into the chamber space (CS) through an inlet (111) penetrating the upper chamber body (110). At this time, the pressure and temperature within the chamber space (CS) can be greater than or equal to the critical pressure and critical temperature of the supercritical fluid. For example, the critical pressure of carbon dioxide is approximately 74 bar and the critical temperature is approximately 31 It can be. The temperature inside the chamber space (CS) is, for example, about 31 to about 100 It may be, and the pressure in the chamber space (CS) may be about 74 bar to about 100 bar.

[0051] Referring to FIGS. 8 and 9c, a plurality of vibration devices (140a, 140b) can apply ultrasonic vibrations to a wafer (150) (S1300). At this time, each of the plurality of vibration devices (140a, 140b) may be configured to generate ultrasonics having different frequencies. For example, each of the vibration devices (140a, 140b) may include at least three vibration modules (143), and each vibration module (143) may be configured to generate ultrasonics having different frequencies. In this case, at least one of the ultrasonics may have a frequency in the range of 20 kHz or more and less than 60 kHz, at least another of the ultrasonics may have a frequency in the range of 60 kHz or more and less than 100 kHz, and at least yet another of the ultrasonics may have a frequency in the range of 100 kHz or more.

[0052] In an exemplary embodiment, the frequency of the ultrasonics may be selected to avoid the natural frequency of the pattern formed on the wafer (150). For example, if the natural frequency of the pattern formed on the wafer (150) is 1 MHz, the frequency of the ultrasonics may be selected so as not to be 1 MHz. The natural frequency of the patterns formed on the wafer (150) is determined by the aspect ratio. Since a plurality of vibration devices (140a, 140b) may be configured to generate ultrasonics having different frequencies, the natural frequency of the pattern formed on the wafer (150) can be avoided even when the aspect ratio of the patterns formed on the wafer (150) changes. Accordingly, the drying process can be performed regardless of the aspect ratio of the pattern formed on the wafer (150). Although the ultrasonic vibration is shown as being applied directly to the wafer (150) in FIG. 9c, it is not limited thereto. For example, as illustrated in FIGS. 5a to 5c, when vibration modules (250) are disposed on the lower surface (210a) of the upper chamber body (210) and / or on both side walls (210b) of the upper chamber body (210), the vibration modules (250) may apply ultrasonic vibrations directly to the cleaning solution (IA) and supercritical fluid on the wafer (150). The step (S1300) of applying ultrasonic vibrations to the wafer (150) may be performed for about 10 seconds to about 10 minutes, but is not limited thereto. By applying ultrasonic vibrations to the wafer (150) or to the cleaning solution (IA) and supercritical fluid, the mixing speed of the cleaning solution (IA) and supercritical fluid may be increased. Accordingly, the efficiency of the semiconductor device manufacturing process may be improved. In addition, the flow rate of the supercritical fluid and cleaning solution (IA) is increased due to the ultrasound, so that particles on the wafer (150) can be removed more effectively.

[0053] Referring to FIGS. 8 and 9d, the supercritical fluid can be discharged out of the chamber space (CS) (S1400). After dissolving the cleaning solution (IA) on the wafer (150), the supercritical fluid can be discharged out of the chamber space (CS) together with the cleaning solution (IA). For example, the supercritical fluid can be discharged out of the chamber space (CS) through an outlet (121) penetrating the lower chamber body (120).

[0054] Next, referring to FIG. 8, a wafer (150) can be unloaded from the chamber space (S1500). Before unloading the wafer (150), the chamber space (CS) can be opened. This can be achieved by separating the upper chamber body (110) from the lower chamber body (120). For example, the upper chamber body (110) can be moved away from the lower chamber body (120). Additionally, the lower chamber body (120) can be moved away from the upper chamber body (110). After the wafer (150) is unloaded, additional processes for manufacturing a semiconductor device can be performed.

[0055] As described above, exemplary embodiments have been disclosed in the drawings and specification. Although specific terms have been used to describe the embodiments in this specification, they are used only for the purpose of explaining the technical concept of this disclosure and are not intended to limit the meaning or the scope of this disclosure as defined in the claims. Therefore, those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of this disclosure should be determined by the technical concept of the appended claims. Explanation of the symbols

[0056] 100: Substrate drying device 110: Upper chamber body 120: Lower chamber body 130: Support plate 140a, 140b: Vibration device 150: Wafer 200a, 200b, 200c: Substrate drying device 210: Upper chamber body 220: Lower chamber body 230: Support plate 240: Fixed Module 250: Vibration Module 260: Wafer 270: Wave transmission plate S1000: Substrate drying method.

Claims

Claim 1 A substrate drying apparatus comprising: an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices disposed on the chamber space, the plurality of vibration modules configured to generate ultrasound having different frequencies and a fixing module disposed on the plurality of vibration modules and configured to fix a wafer. Claim 2 A substrate drying device according to claim 1, wherein the plurality of vibration devices are arranged along the edge of the wafer, and the fixing module is a grip pin that grips the side of the wafer. Claim 3 A substrate drying device according to claim 1, wherein the plurality of vibration devices are disposed below the wafer, and the fixing module is a support pin that supports the lower surface of the wafer. Claim 4 A substrate drying apparatus according to claim 1, characterized in that the contact surface of the fixed module in contact with the wafer comprises a viscoelastic material. Claim 5 A substrate drying apparatus according to claim 1, wherein the plurality of vibration modules is at least three or more, and the plurality of vibration modules are configured to generate ultrasonic waves having different frequencies, wherein at least one of the ultrasonic waves has a frequency in the range of 20 kHz or more and less than 60 kHz, at least another of the ultrasonic waves has a frequency in the range of 60 kHz or more and less than 100 kHz, and at least yet another of the ultrasonic waves has a frequency in the range of 100 kHz or more. Claim 6 A substrate drying device according to claim 2, wherein the grip pin comprises a first part and a second part having different vertical lengths, and the difference in length between the first part and the second part is 1 mm to 3 mm. Claim 7 A substrate drying apparatus according to claim 3, wherein the plurality of vibration devices comprises at least four or more, one vibration device is positioned at the center of the wafer, and the remaining vibration devices, excluding the one vibration device, are positioned at equal intervals on a circumference centered on the one vibration device. Claim 8 A substrate drying apparatus comprising: an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; a plurality of fixing modules disposed on the chamber space and configured to fix a wafer; a plurality of vibration modules disposed on the chamber space and configured to generate ultrasound having different frequencies; and a wave transmission plate interposed between the plurality of vibration modules and the wafer. Claim 9 delete Claim 10 delete

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