Heater purge apparatus of fosb and semiconductor process device using the same

Abstract

The present invention relates to a heater purge device for a FOSB that controls and supplies the temperature of purge gas to the FOSB, and a semiconductor process device using the same. It is characterized by comprising a main body portion that supports the FOSB so that it can be detachably mounted on the upper side, a supply portion that supplies purge gas to the interior of the FOSB, a control portion that controls the supply of purge gas, a nozzle portion that sprays purge gas, and a first heater portion that controls the lower temperature of the FOSB. Accordingly, the present invention provides the effect of enabling lower humidity control by providing a heater on the stage of the FOSB by providing a first heater portion that controls the lower temperature of the FOSB mounted on the upper side of the main body portion (10).

Description

Technology Field

[0001] The present invention relates to a heater purge device for FOSB and a semiconductor process apparatus using the same, and more specifically, to a heater purge device for FOSB that controls and supplies the temperature of purge gas to FOSB and a semiconductor process apparatus using the same. Background Technology

[0002] In the semiconductor manufacturing process, wafers and the semiconductor devices formed thereon are high-precision items, requiring care to prevent damage from external contaminants and impacts during storage and transportation. In particular, management is necessary to ensure that the surface of wafers is not contaminated by impurities such as dust, moisture, and various organic substances during storage and transportation.

[0003] Conventionally, wafer processing was carried out in clean rooms to improve the manufacturing yield and quality of semiconductors. However, as the high integration and miniaturization of devices and the enlargement of wafers progressed, managing clean rooms, which are relatively large spaces, has become difficult in terms of both cost and technology.

[0004] Accordingly, recently, instead of improving the overall cleanliness of the cleanroom, a cleaning method of a mini-environment that intensively improves cleanliness in a localized space around the wafer is applied.

[0005] Meanwhile, the semiconductor manufacturing process involves the sequential repetition of various unit processes such as etching, deposition, and etching. During each process step, foreign substances or contaminants remain on the wafer, leading to defects or a decrease in semiconductor process yield.

[0006] Therefore, in semiconductor processes, wafers are transferred to various process chambers or semiconductor processing spaces. At this time, various means are provided to minimize the attachment of foreign substances or contaminants to the wafer while transferring it from one processing space to another.

[0007] A semiconductor process device including an Equipment Front End Module (EFEM) comprises a Load Port Module (LPM), a Front Opening Shipping Box (FOSB), a Fan Filter Unit (FFU), and a wafer transport room.

[0008] To store wafers in a high-cleanliness environment, a wafer container called a FOSB (Front Opening Shipping Box) is used, and a wafer transport room is formed in the path where wafers move from the wafer container to the semiconductor processing space, and the wafer transport room is maintained as a clean space by a fan filter unit.

[0009] It is configured so that a wafer inside a wafer container can be transferred into the wafer container via a load port module or received from the wafer container by a wafer transfer robot, such as an arm robot installed in the wafer transfer room.

[0010] The door of the load port module and the door installed at the entrance on the front side of the wafer container are opened simultaneously while in close contact, and the wafer is removed or stored through the open area.

[0011] Generally, fumes generated after the process remain on the surface of wafers that have undergone semiconductor processing, and chemical reactions occur as a result, acting as a cause that reduces the productivity of semiconductor wafers.

[0012] Furthermore, when the door of the wafer container is opened for the removal or storage of wafers, the purge gas concentration inside the wafer container is controlled to be maintained at a certain level, and the external air introduced into the wafer container is filtered.

[0013] However, some unfiltered air is present inside the wafer container due to the influx of outside air. Although the atmospheric environment of the wafer transport room consists of clean air with controlled particulate matter, it contains oxygen and moisture. If this air enters the wafer container and causes the internal humidity to rise, there is a possibility that the wafer surface may oxidize due to the moisture or oxygen contained in the outside air.

[0014] Therefore, as a means to effectively block the inflow of outside air from the wafer transport room into the wafer container, conventionally, although it is possible to block outside air by providing a double door opening and closing means through the opening and closing of the load port module and the lid of the wafer container, there was a problem in that the configuration of the load port became considerably complex due to the provision of a door that slides in the vertical direction.

[0015] Furthermore, as the door member was moved up and down to block the outside air, the time required for the removal and storage of wafers increased significantly, and this caused changes in the internal humidity of the wafer container, leading to a problem of reduced semiconductor manufacturing yield.

[0016] In particular, there was a problem where the yield decreased because outside air entered the interior of the wafer container through the inlet / outlet where the wafer enters and exits, causing the internal humidity to rise and the wafer surface to be damaged by moisture or oxygen contained in the outside air.

[0017] In addition, although a separate air supply unit was installed at the top of the wafer container to control the humidity and airflow of the wafer container, there was a problem in that it could not capture fumes or foreign gases that have a fatal effect on particles and wafers inside the FOSB, and thus could not solve the disadvantage of the short lifespan of internal components.

[0018] In particular, after the fume (containing Cl, F, etc.) from the semiconductor processing equipment is released from the wafer, the fumes are diffused by the airflow of the EFEM, causing corrosion to occur throughout and become concentrated at the entrance and exit points of the wafer container, thus requiring countermeasures to prevent corrosion.

[0019] In the case of conventional FOSB nozzle cleaners, the internal environment is established by purging only N2, and there was a problem in that humidity control was not easy in conventional FOSB nozzle cleaner technology. Prior art literature

[0020] Republic of Korea Registered Publication No. 10-1601600 (March 9, 2016) Republic of Korea Open Publication No. 10-2024-0040044 (March 27, 2024) Republic of Korea Open Publication No. 10-2024-0145406 (October 7, 2024) The problem to be solved

[0021] The present invention is devised to resolve the aforementioned conventional problems and aims to provide a heater purge device for an FOSB and a semiconductor process device using the same, which can achieve lower humidity control by providing a heater on the stage of the FOSB by providing a first heater unit that controls the lower temperature of the FOSB mounted on the upper part of the main body.

[0022] In addition, another objective of the present invention is to provide a heater purge device for a FOSB and a semiconductor process device using the same, which can control low humidity by attaching an N2 nozzle to the FOSB Nozzle Cleaner Front side and performing a heating N2 purge inside the FOSB by providing a second heater part that controls the temperature of the purge gas sprayed from the nozzle part.

[0023] In addition, another objective of the present invention is to provide a heater purge device for an FOSB that can create a low humidity environment inside the FOSB through lower heat by equipping the FOSB Stage with a heater, and a semiconductor process device using the same.

[0024] In addition, another objective is to provide a heater purge system heater of FOSB capable of creating a lower humidity N2 environment by purging Heating N2, and a semiconductor process device using the same. means of solving the problem

[0025] The present invention, for achieving the above-mentioned purpose, is a heater purge device for a FOSB that controls and supplies the temperature of purge gas to the FOSB, comprising: a main body (10) that supports the FOSB so that it can be detachably attached to the upper part; a supply unit (20) installed on one side of the main body (10) to supply purge gas to the interior of the FOSB; a control unit (30) installed on the other side of the main body (10) and connected to the supply unit (20) to control the supply of purge gas from the supply unit (20); a nozzle unit (40) installed on the upper part of the main body (10) and installed around the entrance / exit of the FOSB to spray the purge gas supplied to the supply unit (20); and a first heater unit (50) installed on the upper part of the main body (10) to control the lower temperature of the FOSB seated on the upper part of the main body (10).

[0026] In addition, the present invention is characterized by further including a second heater unit (60) installed in the nozzle unit (40) to control the temperature of the purge gas sprayed from the nozzle unit (40).

[0027] The second heater unit (60) of the present invention is characterized by comprising: a 21st heater installed above the nozzle unit (40); a 22nd heater installed on one side of the nozzle unit (40); and a 23rd heater installed on the other side of the nozzle unit (40).

[0028] The nozzle part (40) of the present invention is characterized by comprising: a first nozzle installed above the entrance / exit of the FOSB to spray purge gas into the lower interior of the FOSB; a second nozzle installed on one side of the entrance / exit of the FOSB to spray purge gas into the other side interior of the FOSB; and a third nozzle installed on the other side of the entrance / exit of the FOSB to spray purge gas into the one side interior of the FOSB.

[0029] The first heater unit (50) of the present invention is characterized by being installed on a stage to control the lower temperature of the FOSB mounted on the upper part of the main body (10).

[0030] In addition, the present invention is a semiconductor process apparatus characterized by using the heater purge device of the FOSB described above. Effects of the invention

[0031] As seen above, the present invention provides the effect of enabling lower humidity control by providing a heater on the stage of the FOSB by providing a first heater unit that controls the lower temperature of the FOSB mounted on the upper part of the main body.

[0032] In addition, by providing a second heater unit that controls the temperature of the purge gas sprayed from the nozzle unit, an N2 nozzle is attached to the front side of the FOSB Nozzle Cleaner to perform heating N2 purge inside the FOSB, thereby providing the effect of controlling low humidity.

[0033] In addition, by equipping the FOSB Stage with a heater, it provides the effect of creating a low humidity environment inside the FOSB through bottom heat.

[0034] In addition, the FOSB's Purge System Heater provides the effect of creating a lower humidity N2 environment by purging the heating N2. Brief explanation of the drawing

[0035] FIG. 1 is a configuration diagram showing a heater purge device of a FOSB according to one embodiment of the present invention. FIG. 2 is a detailed diagram showing an example of a heater purge device for a FOSB according to an embodiment of the present invention. FIG. 3 is a detailed diagram showing another example of a heater purge device for a FOSB according to one embodiment of the present invention. FIG. 4 is a state diagram showing the injection state of the nozzle part of the heater purge device of FOSB according to one embodiment of the present invention. FIG. 5 is a configuration diagram showing the second heater section of a heater purge device of a FOSB according to one embodiment of the present invention. Specific details for implementing the invention

[0036] Hereinafter, a preferred embodiment of the present invention will be described in more detail with reference to the attached drawings.

[0037] FIG. 1 is a configuration diagram showing a heater purge device for a FOSB according to one embodiment of the present invention, FIG. 2 is a detailed diagram showing one example of a heater purge device for a FOSB according to one embodiment of the present invention, FIG. 3 is a detailed diagram showing another example of a heater purge device for a FOSB according to one embodiment of the present invention, FIG. 4 is a state diagram showing the injection state of the nozzle part of the heater purge device for a FOSB according to one embodiment of the present invention, and FIG. 5 is a configuration diagram showing the second heater part of the heater purge device for a FOSB according to one embodiment of the present invention.

[0038] As shown in FIGS. 1 and 2, the heater purge device of the FOSB according to the present embodiment comprises a main body part (10), a supply part (20), a control part (30), a nozzle part (40), a first heater part (50), and a second heater part (60), and is a heater purge device of the FOSB (Front Opening Shipping Box) that controls and supplies the temperature of the purge gas to the FOSB (Front Opening Shipping Box).

[0039] The main body (10) is a main body member that supports the FOSB (100) so that it can be detachably attached to the upper part, and a stage is installed on the upper part where the FOSB (100) is seated, and various utility facilities are installed in the internal space to purge the FOSB (100) by supplying and discharging a purge gas such as N2 gas or CDA (Clean Dry Gas).

[0040] The supply unit (20) is a supply member installed on one side of the main body (10) to supply purge gas to the interior of the FOSB (100), and is composed of a flow meter (21) that measures the supply flow rate of purge gas to supply purge gas such as N2 gas or CDA (Clean Dry Gas) to the interior of the FOSB (100), and a solenoid valve (22) that controls the supply flow rate of purge gas.

[0041] The control unit (30) is a control member installed on the other side of the main body (10) and connected to the supply unit (20) to control the supply of purge gas from the supply unit (20), and is composed of an upper temperature controller (31), a lower temperature controller (32), a one-sided temperature controller (33), and a other-sided temperature controller (34).

[0042] The upper temperature controller (31) is connected to the first nozzle (41) and the second heater (61) to control the amount and temperature of the purge gas injected from above the inlet / outlet of the FOSB (100).

[0043] The lower temperature controller (32) is connected to the stage and the first heater unit (50) to control the amount and temperature of the purge gas supplied from the lower part of the inlet / outlet of the FOSB (100), or to adjust the temperature of the lower part of the inlet / outlet of the FOSB (100) or the temperature of the stage.

[0044] One-sided temperature controller (33) is connected to the second nozzle (42) and the second heater (62) to control the amount and temperature of the purge gas injected from one side of the inlet / outlet of the FOSB (100).

[0045] The other side temperature controller (34) is connected to the third nozzle (43) and the second 3rd heater (63) to control the amount and temperature of the purge gas injected from the other side of the inlet / outlet of the FOSB (100).

[0046] The nozzle part (40) is a nozzle member installed on the upper part of the main body part (10) and installed around the entrance / exit of the FOSB (100) to spray purge gas supplied to the supply part (20), and is composed of a first nozzle (41), a second nozzle (42), and a third nozzle (43) as shown in FIGS. 3 to 5.

[0047] The first nozzle (41) is a nozzle member installed above the entrance of the FOSB (100) to spray purge gas into the lower interior of the FOSB (100), and is composed of a plurality of first nozzle holes (41a) installed in a row above the entrance of the FOSB (100).

[0048] The second nozzle (42) is a nozzle member installed on one side of the entrance / exit of the FOSB (100) to spray purge gas to the other side inside the FOSB (100), and is composed of a plurality of second nozzle holes (42a) installed in a row on one side of the entrance / exit of the FOSB (100).

[0049] The third nozzle (43) is a nozzle member installed on the other side of the entrance / exit of the FOSB (100) to spray purge gas into one side of the interior of the FOSB (100), and is composed of a plurality of third nozzle holes (43a) installed in a row on the other side of the entrance / exit of the FOSB (100).

[0050] The first heater part (50) is a heater member installed on the upper part of the main body part (10) to control the lower temperature of the FOSB (100) seated on the upper part of the main body part (10), and is composed of a cartridge heater to control the lower temperature of the FOSB (100).

[0051] It is possible for such a first heater unit (50) to be installed on a stage to control the lower temperature of the FOSB (100) seated on the upper part of the main body (10) and at the same time control the temperature of the purge gas supplied to the lower part of the FOSB (100).

[0052] The second heater section (60) is a heater member installed in the nozzle section (40) to control the temperature of the purge gas sprayed from the nozzle section (40), and is composed of a 21st heater (61), a 22nd heater (62), and a 23rd heater (63).

[0053] The 21st heater (61) is a heater member installed above the nozzle part (40) to control the temperature of the purge gas, and is made of a cartridge heater to control the temperature of the purge gas sprayed by the first nozzle (41) above the inlet / outlet of the FOSB (100).

[0054] The 22nd heater (62) is a heater member installed on one side of the nozzle part (40) to control the temperature of the purge gas, and is made of a cartridge heater to control the temperature of the purge gas sprayed by the 2nd nozzle (42) on one side of the inlet / outlet of the FOSB (100).

[0055] The 23rd heater (63) is a heater member installed on the other side of the nozzle part (40) to control the temperature of the purge gas, and is made of a cartridge heater to control the temperature of the purge gas sprayed by the 3rd nozzle (43) on the other side of the inlet / outlet of the FOSB (100).

[0056] In addition, it is also possible for the present invention to be composed of a semiconductor process apparatus utilizing the heater purge device of the FOSB (100) of the present embodiment.

[0057] As explained above, according to the present invention, by providing a first heater unit that controls the lower temperature of the FOSB mounted on the upper part of the main body, the effect of enabling lower humidity control by providing a heater on the stage of the FOSB is provided.

[0058] In addition, by providing a second heater unit that controls the temperature of the purge gas sprayed from the nozzle unit, an N2 nozzle is attached to the front side of the FOSB Nozzle Cleaner to perform heating N2 purge inside the FOSB, thereby providing the effect of controlling low humidity.

[0059] In addition, by equipping the FOSB Stage with a heater, it provides the effect of creating a low humidity environment inside the FOSB through bottom heat.

[0060] In addition, the FOSB's Purge System Heater provides the effect of creating a lower humidity N2 environment by purging the heating N2.

[0061] The invention described above may be implemented in various other forms without departing from its technical concept or main features. Accordingly, the above embodiments are merely examples in all respects and should not be interpreted restrictively. Explanation of the symbols

[0062] 10: Main body 20: Supply unit 30: Control unit 40: Nozzle part 50: 1st heater section 60: Second heater section

Claims

Claim 1 A heater purge device for a FOSB that controls and supplies the temperature of purge gas to the FOSB, comprising: a main body (10) that supports the FOSB so that it can be detachably attached to the upper part; a supply unit (20) installed on one side of the main body (10) to supply purge gas to the interior of the FOSB; a control unit (30) installed on the other side of the main body (10) and connected to the supply unit (20) to control the supply of purge gas from the supply unit (20); a nozzle unit (40) installed on the upper part of the main body (10) and installed around the entrance / exit of the FOSB to spray the purge gas supplied to the supply unit (20); and a first heater unit (50) installed on the upper part of the main body (10) to control the lower temperature of the FOSB seated on the upper part of the main body (10). A heater purge device for FOSB, comprising: a second heater unit (60) installed on the nozzle unit (40) to control the temperature of the purge gas sprayed from the nozzle unit (40); wherein the second heater unit (60) comprises: a 21st heater installed above the nozzle unit (40) to control the temperature of the purge gas sprayed from above the nozzle unit (40); a 22nd heater installed on one side of the nozzle unit (40) to control the temperature of the purge gas sprayed from one side of the nozzle unit (40); and a 23rd heater installed on the other side of the nozzle unit (40) to control the temperature of the purge gas sprayed from the other side of the nozzle unit (40). Claim 2 delete Claim 3 delete Claim 4 A heater purge device for a FOSB according to claim 1, wherein the nozzle part (40) comprises: a first nozzle installed above the inlet / outlet of the FOSB to spray purge gas into the lower interior of the FOSB; a second nozzle installed on one side of the inlet / outlet of the FOSB to spray purge gas into the other side interior of the FOSB; and a third nozzle installed on the other side of the inlet / outlet of the FOSB to spray purge gas into the one side interior of the FOSB. Claim 5 A heater purge device for a FOSB according to claim 1, characterized in that the first heater part (50) is installed on a stage to regulate the lower temperature of the FOSB seated on the upper part of the main body part (10). Claim 6 A semiconductor process apparatus characterized by using a heater purge device of the FOSB described in claim 1.

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