Display device
The display device uses crack line resistance measurement to automate crack detection, addressing inefficiencies in conventional methods by accurately locating cracks and reducing bezel size.
Patent Information
- Application Number
- KR1020250008929
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-01-21
- Publication Date
- 2026-11-03
- Estimated Expiration
- 2038-12-20
AI Technical Summary
Conventional crack inspection processes for display panels require separate personnel and time to locate cracks, as they can only determine the presence of cracks but not their exact location, leading to inefficiencies.
A display device with a crack detection system that measures the resistance of crack lines to identify the number and location of cracks, incorporating a substrate, thin-film transistor, organic light-emitting device, encapsulation layers, and crack lines disposed outside the gate driver, allowing for automated crack detection.
This approach eliminates the need for manual inspection, improving process yield by accurately determining crack locations and reducing the size of the bezel area.
Smart Images

Figure 112025008309360-PAT00001_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a display device, and more specifically, to a display device capable of detecting cracks in a display panel. Background Technology
[0002] As we enter the full-scale information age, the field of display devices that visually represent electrical information signals is developing rapidly. Accordingly, research is continuously being conducted to improve the performance of various flat panel display devices, such as miniaturization, weight reduction, and low power consumption. Representative examples of such flat panel display devices include Liquid Crystal Displays (LCDs), Plasma Display Panels (PDPs), Field Emission Displays (FEDs), Electro-Wetting Displays (EWDs), and Organic Light Emitting Displays (OLEDs).
[0003] Meanwhile, in order to reduce the process defect rate of flat panel displays, a process of inspecting for cracks in the display panel is necessary as a type of pre-shipment inspection.
[0004] However, the conventional crack inspection process includes a process of determining whether a crack has occurred through a crack detection line placed on the outer edge of the display panel and a process of an inspector directly locating the position of the crack.
[0005] In other words, conventional crack inspection processes require separate personnel and time to locate cracks, which leads to process inefficiencies. The problem to be solved
[0006] The inventors of the present invention recognized the problem that the crack inspection process causes process inefficiency because it requires separate inspector personnel and inspection time.
[0007] Specifically, conventionally, in order to inspect for cracks in a display panel, a crack detection line for inspecting cracks was placed on the outer edge of the display panel, and it was possible to inspect whether a crack had occurred in the display panel by determining whether the crack detection line was open.
[0008] However, in conventional crack inspection processes, it is only possible to check whether a crack has occurred in the display panel, but since the location of the crack cannot be determined, an inspector had to directly observe the entire area of the display panel through a microscope to determine the exact location of the crack.
[0009] Accordingly, in order to solve the aforementioned problem, the inventors of the present invention have invented a display device capable of determining the number and location of cracks by simply measuring the resistance of a crack inspection line.
[0010] In other words, the problem to be solved by the present invention is to provide a display device capable of detecting the number and location of crack occurrences.
[0011] In addition, another problem to be solved by the present invention is to provide a display device that includes a crack detection line while reducing the size of the bezel.
[0012] The problems of the present invention are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem
[0013] To solve the problem described above, a display device according to one embodiment of the present invention comprises a substrate including a display area and a non-display area; a thin-film transistor disposed in the display area and including a source electrode, a drain electrode, a gate electrode, and an active layer; a planarization layer disposed on the thin-film transistor; an organic light-emitting device disposed on the planarization layer and including an anode, an organic light-emitting layer, and a cathode; an encapsulation portion disposed on the organic light-emitting device and including a first encapsulation layer composed of an inorganic material, a foreign matter compensation layer composed of an organic material, and a second encapsulation layer composed of an inorganic material; a gate driver disposed in the form of a gate-in-panel (GIP) on both sides of the non-display area; and at least two crack lines disposed outside the gate driver in the non-display area, wherein at least one of the first encapsulation layer and the second encapsulation layer of the encapsulation portion may overlap with at least one of the at least two crack lines.
[0014] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention
[0015] Since the present invention allows the location and number of cracks to be identified through the resistance of the crack line, it eliminates the need for inspection personnel and time for separate crack inspection, thereby having the effect of improving the process yield of the display device.
[0016] In addition, the present invention can reduce the size of the bezel area where the crack lines are placed by arranging the sub-crack lines on different layers.
[0017] The effects according to the present invention are not limited to those exemplified above, and various other effects are included in this specification. Brief explanation of the drawing
[0018] FIG. 1 is a schematic plan view of a display device according to one embodiment of the present invention. Figure 2 is a cross-sectional view along the line I-I' of Figure 1. FIG. 3a is a drawing for explaining the width of a crack line of a display device according to one embodiment of the present invention. FIG. 3b is a cross-sectional view taken along IIa-IIa', IIb-IIb', and IIc-IIc' shown in FIG. 3a. FIG. 4 is a drawing for explaining the number of crack lines of a display device according to one embodiment of the present invention. FIG. 5 is a diagram illustrating the resistance of a crack line of a display device according to one embodiment of the present invention. FIG. 6 is a cross-sectional view of a display device according to another embodiment of the present invention. Specific details for implementing the invention
[0019] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.
[0020] Shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the depicted details. Throughout the specification, the same reference numerals refer to the same components. Furthermore, in describing the present invention, if it is determined that a detailed description of related prior art may unnecessarily obscure the essence of the present invention, such detailed description is omitted. Where terms such as "includes," "has," or "is made up" are used in this specification, other parts may be added unless "only" is used. Where a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise.
[0021] In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement.
[0022] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described using expressions such as 'on,' 'upper,' 'lower,' or 'next to,' one or more other parts may be located between the two parts unless 'immediately' or 'directly' is used.
[0023] When an element or layer is referred to as "on" another element or layer, it includes cases where another layer or element is placed directly on top of or in between.
[0024] Although terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of the present invention.
[0025] Throughout the specification, the same reference numerals refer to the same components.
[0026] The size and thickness of each component shown in the drawings are illustrated for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the illustrated components.
[0027] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and as will be fully understood by those skilled in the art, various technical interlocking and operation are possible, and each embodiment may be implemented independently of one another or together in an interlocking relationship.
[0028] Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings.
[0029] FIG. 1 is a schematic plan view of a display device according to one embodiment of the present invention. FIG. 2 is a cross-sectional view along the line I-I' of FIG. 1.
[0030] Referring to FIG. 1, a display panel of a display device (100) according to one embodiment of the present invention includes a display area (AA) that displays an image by including a plurality of pixels (PX) and a non-display area (NA) that does not display an image.
[0031] Each of the plurality of pixels (PX) placed in the display area (AA) may include an organic light-emitting element (140) and a thin-film transistor (T). The thin-film transistor (T) of each pixel (PX) is sequentially driven by the gate driver (GD), so that the organic light-emitting element (140) emits light to realize an image.
[0032] In the non-display area (NA), a gate driver (GD) that sequentially drives a plurality of pixels (PX), a plurality of pads (PD) to which a driving voltage and data signal are applied from an external system, and signal wiring that transmits the driving voltage or data signal applied to the plurality of pads (PD) to the plurality of pixels (PX) or the gate driver (GD) are arranged.
[0033] Additionally, the gate driver (GD) placed in the non-display area (NA) is illustrated in the form of a GIP (Gate In Panel) positioned adjacent to both sides of the display area (AA), but is not limited thereto and the placement position of the gate driver (GD) can be varied as needed.
[0034] In addition, a crack line (CL) for detecting cracks in the display panel is placed at the outermost edge of the non-display area (NA). Furthermore, a plurality of crack pads (CPD1, CPD2) are placed at both ends of the crack line (CL) so as to be connected to a crack detection unit (CD).
[0035] That is, the crack line (CL) is arranged to surround the pixel (PX) placed in the display area (AA) and the gate driver (GD) placed in the non-display area (NA), and the resistance value varies depending on the number and location of the cracks.
[0036] Specifically, the crack line (CL) includes a plurality of crack line units (CLL, CLC, CLR) connected in series and having different resistance values. For example, in FIG. 1, the crack line (CL) includes a left crack line unit (CLL) positioned to the left of the non-display area (NA), a central crack line unit (CLC) positioned to the lower center of the non-display area (NA), and a right crack line (CL) positioned to the right of the non-display area (NA).
[0037] Specifically, the left crack line unit (CLL) and the central crack line (CL) are connected in series, and the central crack line unit (CLC) and the right crack line unit (CLR) are connected in series to form the crack line (CL).
[0038] Here, the left crack line unit (CLL) includes a first left sub-crack line (CLL1) and a second left sub-crack line (CLL2) connected in parallel, and the first left sub-crack line (CLL1) may be positioned on the left side, which is outer than the second left sub-crack line (CLL2). And, the right crack line unit (CLR) includes a first right sub-crack line (CLR1) and a second right sub-crack line (CLR2) connected in parallel, and the first right sub-crack line (CLR1) may be positioned on the right side, which is outer than the second right sub-crack line (CLR2). And, the central crack line unit (CLC) includes a first central sub-crack line (CLC1) and a second central sub-crack line (CLC2) connected in parallel, and the first central sub-crack line (CLC1) may be positioned on the lower side, which is outer than the second central sub-crack line (CLC2).
[0039] A plurality of crack pads (CPD1, CPD2) include a first crack pad (CPD1) connected to the left crack line unit (CLL) of the crack line (CL) and a second crack pad (CPD2) connected to the right crack line unit (CLR) of the crack line (CL). Both the first crack pad (CPD1) and the second crack pad (CPD2) described above may be integrally formed on the same layer as the crack line (CL). However, they are not limited thereto, and the first crack pad (CPD1) and the second crack pad (CPD2) may be varied according to the wiring design.
[0040] The crack detection unit (CD) can detect the location and number of cracks by measuring the resistance of the crack line (CL).
[0041] That is, the crack detection unit (CD) is connected to the left crack line unit (CLL) through the first crack pad (CPD1) and to the right crack line unit (CLR) through the second crack pad (CPD2), so that the total resistance of the crack line (CL) can be measured.
[0042] And, as will be described later using Fig. 3, the location and number of cracks can be determined based on the total resistance value of the crack line (CL). Specific details regarding this will be described later.
[0043] As described above, by configuring each of the multiple crack line units (CLL, CLC, CLR) by connecting multiple sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2) in parallel, even if a crack occurs in the display panel due to an external force and some of the parallel-connected sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2) are broken, the crack line (CL) itself does not open and can have a constant resistance value.
[0044] Specifically, even if the first left sub-crack line (CLL1) positioned on the outer side of the left crack line unit (CLL) is broken, the second left sub-crack line (CLL2) positioned on the inner side is not broken, so the crack line (CL) itself is not opened and can have a constant resistance value.
[0045] As described above, even if a crack occurs in the display panel due to an external force, the crack line (CL) itself does not open and has a constant resistance value, so the crack detection unit (CD) can determine the location and number of cracks in the crack line (CL) by measuring the resistance value of the crack line (CL).
[0046] Referring to FIG. 2, a buffer layer (120) is formed on a substrate (110) in a display area (AA), and a thin-film transistor (T) and an organic light-emitting element (140) are disposed on the buffer layer (120).
[0047] However, although the display device according to one embodiment of the present invention is described using an Organic Light Emitting Display device (OLED) as an example, it is not limited thereto and may be a Liquid Crystal Display device (LCD), a Plasma Display Panel device (PDP), a Field Emission Display device (FED), and an Electro-Wetting Display device (EWD).
[0048] The substrate (110) may have rigid or flexible characteristics. Here, the flexible characteristic can be interpreted as having the same meaning as bendable, unbreakable, rollable, foldable characteristics.
[0049] For example, the substrate (110) may be made of glass or plastic, in which case the substrate (110) may be referred to as a plastic film or a plastic substrate. For example, the substrate (110) may be made of one selected from the group consisting of polyester-based polymers, silicone-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof. As a specific example, the substrate (110) may be made of polyimide (PI). Polyimide (PI) is widely used as a plastic substrate because it can be applied to high-temperature processes and is capable of coating.
[0050] When the substrate (110) is made of polyimide (PI), a display device manufacturing process is carried out with a support substrate made of glass placed on the lower part of the substrate (110), and the support substrate can be released after the display device manufacturing process is completed. Additionally, after the support substrate is released, a back plate for supporting the substrate (110) may be placed on the lower part of the substrate (110).
[0051] A buffer layer (120) is placed on a substrate (110) and serves to protect the thin-film transistor (T) from impurities, such as alkali ions, leaking from the substrate (110). For example, the buffer layer (120) may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx). Additionally, the buffer layer (120) may perform functions such as improving the adhesion between the layers formed on top of it and the substrate (110), and blocking moisture or oxygen that penetrate through the substrate (110).
[0052] A thin-film transistor (T) is formed on a buffer layer (120) and includes a gate electrode (G), an active layer (AT), a source electrode (S), and a drain electrode (D), and serves to switch an organic light-emitting device (140).
[0053] Specifically, an active layer (AT) is formed on a buffer layer (120), and a gate insulating layer (131) is formed on the active layer (AT) to insulate the active layer (AT) from the gate electrode (G). A gate electrode (G) is formed on the gate insulating layer (131) so as to overlap with the active layer (AT), and an interlayer insulating layer (132) is formed on the gate electrode (G) and the gate insulating layer (131). A source electrode (S) and a drain electrode (D) are formed on the interlayer insulating layer (132), and the source electrode (S) and the drain electrode (D) are electrically connected to the active layer (AT) through a contact hole formed in the interlayer insulating layer (132). That is, the interlayer insulating layer (132) serves to insulate the gate electrode (G) from the source electrode (S) and the drain electrode (D) of the thin-film transistor (T).
[0054] Here, the active layer (AT) may be made of polycrystalline silicon, in which case some regions may be doped with impurities. Additionally, the active layer (AT) may be made of amorphous silicon, organic semiconductor material, or oxide.
[0055] In addition, the gate insulating layer (131) and the interlayer insulating layer (132) may each be made of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), and may also be made of an insulating organic material.
[0056] Additionally, the gate electrode (G), source electrode (S), and drain electrode (D) may each be made of a metal material, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and a triple layer structure of titanium-aluminum-titanium (Ti-Al-Ti), but are not limited thereto. At this time, the source electrode (S) and drain electrode (D) may include a material that can be etched by an etchant used when etching the anode (141) of the organic light-emitting device (140). Additionally, the gate electrode (G), source electrode (S), and drain electrode (D) may each be a single layer or a multilayer formed of the aforementioned material.
[0057] In addition, in one embodiment of the present invention, the thin film transistor (T) is described as having a coplanar structure, but is not limited thereto, and various thin film transistors of different structures that can be employed in the display device (100) may be used.
[0058] The flattening layer (134) is placed on the thin-film transistor (T) and serves to flatten the upper surface of the thin-film transistor (T). The flattening layer (134) includes a contact hole for electrically connecting the thin-film transistor (T) and the anode (141) of the organic light-emitting diode (140). Specifically, the flattening layer (134) includes a contact hole that exposes either the source electrode (S) or the drain electrode (D) of the thin-film transistor (T). The flattening layer (134) may be made of an organic insulating material. Although the flattening layer (134) is shown as a single layer in FIG. 2, various variations are possible, such as being composed of double or multiple layers.
[0059] Specifically, as shown in FIG. 2, a planarization layer (134) can be directly contacted on the source electrode (S) and drain electrode (D) of the thin film transistor (T) described above. That is, a separate passivation layer is not placed on the source electrode (S) and drain electrode (D) of the thin film transistor (T), and the planarization layer (134) can be placed directly on the source electrode (S) and drain electrode (D) of the thin film transistor (T).
[0060] An organic light-emitting element (140) is disposed on a flattening layer (134). The organic light-emitting element (140) includes an anode (141) on the flattening layer (134), an organic light-emitting layer (142) on the anode (141), and a cathode (143) on the organic light-emitting layer (142).
[0061] The anode (141) is spaced apart from each pixel (PX) on the contact hole and some planarization layer (134). The anode (141) supplies holes to the organic light-emitting layer (142) and may be made of a conductive material with a high work function. For example, the anode (141) may be made of a transparent conductive oxide (TCO), such as indium tin oxide (ITO).
[0062] When the display device (100) is a top emission type display device, the anode (141) may be made of a transparent conductive layer including a reflective layer with high reflectivity at the bottom, but is not limited thereto. That is, when the display device (100) is a top emission structure, the anode (141) may further include a reflective layer that reflects light upward. In one embodiment of the present invention, the reflective layer is described as being included in the anode (141), but it may be defined as a separate configuration from the anode (141).
[0063] The organic light-emitting layer (142) is a layer composed of an organic material for emitting a specific color, and may be one of a red organic light-emitting layer, a green organic light-emitting layer, a blue organic light-emitting layer, and a white organic light-emitting layer. In this case, if the organic light-emitting layer (142) is composed of a white organic light-emitting layer, a color filter may be further disposed on top of the organic light-emitting element (140).
[0064] The cathode (143) supplies electrons to the organic light-emitting layer (142) and may be made of a conductive material with a low work function. Here, if the display device (100) is a top emission structure, the cathode (143) may be made of a transparent conductive layer or a metal material with a very thin thickness, but is not limited thereto.
[0065] The bank layer (135) is positioned on the flattening layer (134) to cover a portion of the anode (141) and separates the pixel area in the display area (AA). Additionally, the bank layer (135) may be made of an organic insulating material such as BCB, acrylic resin, or imide resin.
[0066] A spacer (136) is disposed on the bank layer (135). The spacer (136) serves to prevent damage that may occur when the bank layer (135) and the deposition mask come into contact when using a deposition mask, such as a Fine Metal Mask (FMM), to form an organic light-emitting layer (142) on the substrate (110), and to maintain a certain distance between the bank layer (135) and the deposition mask. This spacer (136) may also be formed of an organic insulating material or an inorganic insulating material.
[0067] A sealing portion (150) is disposed on the front of the display area (AA). The sealing portion (150) can protect the organic light-emitting element (140) from external moisture penetration, etc. The sealing portion (150) may be made of a transparent material so that light emitted from the organic light-emitting element (140) is transmitted. This sealing portion (150) includes a first sealing layer (151), a foreign matter compensation layer (152), and a second sealing layer (153).
[0068] The first encapsulation layer (151) and the second encapsulation layer (153) may be made of a transparent inorganic material. For example, materials such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (AlxOy) may be used.
[0069] The foreign matter compensation layer (152) is disposed between the first sealing layer (151) and the second sealing layer (153). The foreign matter compensation layer (152) can compensate for particles caused by cracks that may occur during the process of forming the first sealing layer (151) or the second sealing layer (153). The foreign matter compensation layer (152) may be made of a transparent organic material that is flowable. For example, materials such as epoxy resin, acrylic resin, or silicon oxycarbon (SiOC) may be used.
[0070] Referring to FIG. 2, the insulating layer (132) and the encapsulation portion (150) between the buffer layer (120) on the substrate (110) may be arranged to extend from the display area (AA) to the non-display area (NA).
[0071] Referring to FIG. 2, the first central sub-crack line (CLC1) and the second central sub-crack line (CLC2) are each made of the same material as the source electrode (S) and the drain electrode (D) on the interlayer insulating layer (132) and can be formed simultaneously when the source electrode (S) and the drain electrode (D) are formed. Likewise, the first left sub-crack line (CLL1), the second left sub-crack line (CLL2), the first right sub-crack line (CLR1), and the second right sub-crack line (CLR2) are also made of the same material as the source electrode (S) and the drain electrode (D) on the interlayer insulating layer (132) and can be formed simultaneously when the source electrode (S) and the drain electrode (D) are formed.
[0072] However, it is not limited to this, and multiple sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2) are made of the same material as the gate electrode (G) on the upper part of the gate insulating layer (131) and can be formed simultaneously when the gate electrode (G) is formed.
[0073] FIG. 3a is a drawing for explaining the width of a crack line of a display device according to an embodiment of the present invention. FIG. 3b is a cross-sectional view cut along IIa-IIa', IIb-IIb', and IIc-IIc' shown in FIG. 3a.
[0074] As described above, the resistances of the left crack line unit (CLL), the right crack line unit (CLR), and the center crack line unit (CLC) must be set differently from each other.
[0075] To this end, as shown in FIG. 3a, the widths of the first central sub-crack line (CLC1) and the second central sub-crack line (CLC2), the widths of the first left sub-crack line (CLL1) and the second left sub-crack line (CLL2), and the widths of the first right sub-crack line (CLR1) and the second right sub-crack line (CLR2) can be formed differently from each other.
[0076] Specifically, as illustrated in FIG. 3b, the width (WR1) of the first right sub-crack line (CLR1) and the width (WR2) of the second right sub-crack line (CLR2) may be the same, the width (WL1) of the first left sub-crack line (CLL1) and the width (WL2) of the second left sub-crack line (CLL2) may be the same, and the width (WC1) of the first central sub-crack line (CLC1) and the width (WC2) of the second central sub-crack line (CLC2) may be the same.
[0077] In addition, the width (WL1) of the first left sub-crack line (CLL1) and the width (WL2) of the second left sub-crack line (CLL2) may be wider than the width (WR1) of the first right sub-crack line (CLR1) and the width (WR2) of the second right sub-crack line (CLR2). In addition, the width (WC1) of the first central sub-crack line (CLC1) and the width (WC2) of the second central sub-crack line (CLC2) may be wider than the width (WL1) of the first left sub-crack line (CLL1) and the width (WL2) of the second left sub-crack line (CLL2).
[0078] Accordingly, as the width of the crack line (CL) increases, the resistance of the crack line (CL) decreases; thus, the resistance of the first right sub-crack line (CLR1) and the resistance of the second right sub-crack line (CLR2) may be greater than the resistance of the first left sub-crack line (CLL1) and the resistance of the second left sub-crack line (CLL2). Additionally, the resistance of the first left sub-crack line (CLL1) and the resistance of the second left sub-crack line (CLL2) may be greater than the resistance of the first central sub-crack line (CLC1) and the resistance of the second central sub-crack line (CLC2).
[0079] However, the widths (WC1, WC2) of the first central sub-crack line (CLC1) and the second central sub-crack line (CLC2), the widths (WL1, WL2) of the first left sub-crack line (CLL1) and the second left sub-crack line (CLL2), and the widths (WR1, WR2) of the first right sub-crack line (CLR1) and the second right sub-crack line (CLR2) may be formed differently from one another, but are not limited to the above description and may be changed in various ways depending on the design needs.
[0080] FIG. 4 is a drawing for explaining the number of crack lines of a display device according to one embodiment of the present invention.
[0081] As described above, the resistances of the left crack line unit (CLL), the right crack line unit (CLR), and the center crack line unit (CLC) must be set differently from each other.
[0082] To this end, the number of multiple sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLC3, CLR1, CLR2) constituting the left crack line unit (CLL), the right crack line unit (CLR), and the central crack line unit (CLC) may differ from one another.
[0083] For example, as illustrated in FIG. 4, the left crack line unit (CLL) may include a first left sub-crack line (CLL1) and a second left sub-crack line (CLL2) connected in parallel, the right crack line unit (CLR) may include a first right sub-crack line (CLR1) and a second right sub-crack line (CLR2) connected in parallel, and the center crack line unit (CLC) may include a first center sub-crack line (CLC1), a second center sub-crack line (CLC2), and a third center sub-crack line (CLC3) connected in parallel.
[0084] That is, the left crack line unit (CLL) and the right crack line unit (CLR) each include two parallel-connected sub-crack lines (CLL1, CLL2, CLR1, CLR2), but the central crack line unit (CLC) may include three parallel-connected sub-crack lines (CLC1, CLC2, CLC3).
[0085] In this regard, if the length and width of the crack line (CL) are the same, the total resistance of the crack line unit decreases as the number of parallel-connected sub-crack lines increases and the number of crack line units increases.
[0086] Accordingly, since the number of parallel-connected sub-crack lines of the central crack line unit (CLC) is greater than the number of parallel-connected sub-crack lines of the left crack line unit (CLL) and the right crack line unit (CLR), the total resistance of the central crack line unit (CLC) is lower than the total resistance of the left crack line unit (CLL) and the right crack line unit (CLR).
[0087] However, the number of sub-crack lines included in the left crack line unit (CLL), the right crack line unit (CLR), and the central crack line unit (CLC) is not limited to the above-described details and can be varied according to the design requirements.
[0088] FIG. 5 is a diagram illustrating the resistance of a crack line of a display device according to one embodiment of the present invention.
[0089] As shown in FIG. 5, the resistance of the left crack line unit (CLL) is configured by connecting the resistance (RL1) of the first left sub-crack line (CLL1) and the resistance (RL2) of the second left sub-crack line (CLL2) in parallel, so the resistance value of the left crack line unit (CLL) is (RL1*RL2) / (RL1+RL2). And, when the resistance (RL1) of the first left sub-crack line (CLL1) and the resistance (RL2) of the second left sub-crack line (CLL2) are the same size, the resistance value of the left crack line unit (CLL) is RL1 / 2 or RL2 / 2.
[0090] Based on the same principle, since the resistance of the central crack line unit (CLC) is configured by connecting the resistance (RC1) of the first central sub-crack line (CLC1) and the resistance (RC2) of the second central sub-crack line (CLC2) in parallel, the resistance value of the central crack line unit (CLC) is (RC1*RC2) / (RC1+RC2). Furthermore, if the magnitudes of the resistance (RC1) of the first central sub-crack line (CLC1) and the resistance (RC2) of the second central sub-crack line (CLC2) are the same, the resistance value of the central crack line unit (CLC) is RC1 / 2 or RC2 / 2.
[0091] Based on the same principle, the resistance of the right crack line unit (CLR) is configured by connecting the resistance (RR1) of the first right sub-crack line (CLR1) and the resistance (RR2) of the second right sub-crack line (CLR2) in parallel, so the resistance value of the right crack line unit (CLR) is (RR1*RR2) / (RR1+RR2). Also, if the resistance (RR1) of the first right sub-crack line (CLR1) and the resistance (RR2) of the second right sub-crack line (CLR2) are the same size, the resistance value of the right crack line unit (CLR) is RR1 / 2 or RR2 / 2.
[0092] For convenience of explanation, the resistance (RL1) of the first left sub-crack line (CLL1) and the resistance (RL2) of the second left sub-crack line (CLL2) are each set to 8kΩ, the resistance (RC1) of the first central sub-crack line (CLC1) and the resistance (RC2) of the second central sub-crack line (CLC2) are each set to 4kΩ, and the resistance (RR1) of the first right sub-crack line (CLR1) and the resistance (RR2) of the second right sub-crack line (CLR2) are each set to 16kΩ to explain the change in the total resistance of the crack line (CL) according to the number of cracks.
[0093] As described above, when setting the resistance of multiple sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2), the resistance of the left crack line unit (CLL) becomes 4kΩ, the resistance of the center crack line unit (CLC) becomes 2kΩ, and the resistance of the right crack line unit (CLR) becomes 8kΩ, so the total resistance of the crack line (CL) becomes 14kΩ.
[0094] First, when a crack occurs in the center of the non-marked area (NA) and the first central sub-crack line (CLC1) is broken, the resistance of the central crack line unit (CLC) corresponds to the resistance (RC2) of the second central sub-crack line (CLC2), so the resistance of the central crack line unit (CLC) increases from 2kΩ to 4kΩ. Accordingly, when a crack occurs in the center of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 16kΩ.
[0095] When a crack occurs on the left side of the non-marked area (NA) and the first left sub-crack line (CLL1) is broken, the resistance of the left crack line unit (CLL) corresponds to the resistance (RL2) of the second left sub-crack line (CLL2), so the resistance of the left crack line unit (CLL) increases from 4kΩ to 8kΩ. Accordingly, when a crack occurs on the left side of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 18kΩ.
[0096] When a crack occurs to the right of the non-marked area (NA) and the first right sub-crack line (CLR1) is broken, the resistance of the right crack line unit (CLR) corresponds to the resistance (RR2) of the second right sub-crack line (CLR2), so the resistance of the right crack line unit (CLR) increases from 8kΩ to 16kΩ. Accordingly, when a crack occurs to the right of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 22kΩ.
[0097] Next, when a crack occurs in the left and center of the non-marked area (NA) and the first left sub-crack line (CLL1) and the first center sub-crack line (CLC1) are broken, the resistance of the left crack line unit (CLL) corresponds to the resistance (RL2) of the second left sub-crack line (CLL2) and the resistance of the center crack line unit (CLC) corresponds to the resistance (RC2) of the second center sub-crack line (CLC2). Consequently, the resistance of the left crack line unit (CLL) increases from 4kΩ to 8kΩ and the resistance of the center crack line unit (CLC) increases from 2kΩ to 4kΩ. Accordingly, when a crack occurs in the left and center of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 20kΩ.
[0098] When cracks occur in the right and center of the non-marked area (NA) and the first right sub-crack line (CLR1) and the first center sub-crack line (CLC1) are broken, the resistance of the right crack line unit (CLR) corresponds to the resistance (RR2) of the second right sub-crack line (CLR2) and the resistance of the center crack line unit (CLC) corresponds to the resistance (RC2) of the second center sub-crack line (CLC2). Consequently, the resistance of the right crack line unit (CLR) increases from 8kΩ to 16kΩ and the resistance of the center crack line unit (CLC) increases from 2kΩ to 4kΩ. Accordingly, when cracks occur in the right and center of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 24kΩ.
[0099] When cracks occur on the left and right sides of the non-marked area (NA) and the first left sub-crack line (CLL1) and the first right sub-crack line (CLR1) are broken, the resistance of the left crack line unit (CLL) corresponds to the resistance (RL2) of the second left sub-crack line (CLL2) and the resistance of the right crack line unit (CLR) corresponds to the resistance (RR2) of the second right sub-crack line (CLR2). Consequently, the resistance of the left crack line unit (CLL) increases from 4kΩ to 8kΩ and the resistance of the right crack line unit (CLR) increases from 8kΩ to 16kΩ. Accordingly, when cracks occur on the left and right sides of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 26kΩ.
[0100] Finally, when cracks occur in the left, right, and center of the non-display area (NA) and the first left sub-crack line (CLL1), the first right sub-crack line (CLR1), and the first center sub-crack line (CLC1) are broken, the resistance of the left crack line unit (CLL) corresponds to the resistance (RL2) of the second left sub-crack line (CLL2), the resistance of the right crack line unit (CLR) corresponds to the resistance (RR2) of the second right sub-crack line (CLR2), and the resistance of the center crack line unit (CLC) corresponds to the resistance (RC2) of the second center sub-crack line (CLC2). Therefore, the resistance of the left crack line unit (CLL) increases from 4kΩ to 8kΩ, the resistance of the right crack line unit (CLR) increases from 2kΩ to 4kΩ, and the resistance of the center crack line unit (CLC) increases from 2kΩ to 4kΩ. Accordingly, if a crack occurs on the left, right, and center of the non-marked area (NA), the total resistance of the crack line (CL) increases from 14kΩ to 28kΩ.
[0101] As described above, the total resistance of the crack line (CL) can be varied depending on the location of crack occurrence and the number of crack occurrences in a plurality of display panels.
[0102] More specifically, when a crack occurs in the display panel, the resistance of each of the multiple crack line (CL) units increases, and thus the total resistance of the crack line (CL) increases. Accordingly, the total resistance of the crack line (CL) tends to increase as the number of cracks in the display panel increases.
[0103] In addition, the crack detection unit (CD) measures the change in the total resistance of the crack line (CL) to determine the location of the crack occurrence and the number of cracks.
[0104] Explaining the operation of the crack detection unit (CD) based on the total resistance value of the crack line (CL) described above, the crack detection unit (CD) determines that a crack has occurred in the center of the non-marked area (NA) if the total resistance of the crack line (CL) is measured as 16kΩ; determines that a crack has occurred on the left side of the non-marked area (NA) if the total resistance of the crack line (CL) is measured as 18kΩ; determines that a crack has occurred on the right side of the non-marked area (NA) if the total resistance of the crack line (CL) is measured as 22kΩ; determines that a crack has occurred on the left side of the non-marked area (NA) if the total resistance of the crack line (CL) is measured as 20kΩ; determines that a crack has occurred on the left side and the center of the non-marked area (NA) if the total resistance of the crack line (CL) is measured as 24kΩ; and determines that a crack has occurred on the right side and the center of the non-marked area (NA) if the total resistance of the crack line (CL) is 26kΩ When measured, it is determined that cracks have occurred on the left and right sides of the non-marked area (NA), and when the total resistance of the crack line (CL) is measured as 28kΩ, it is determined that cracks have occurred on the left, center, and right sides of the non-marked area (NA).
[0105] In the display device (100) according to one embodiment of the present invention, it has been described that one crack line unit (CLL, CLC, CLR) is disposed on one side of the display panel, but it is not limited thereto and a plurality of crack line units are disposed on one side of the display panel so that the location of a crack occurring on one side of the display panel can be detected more precisely.
[0106] As described above, a display device according to one embodiment of the present invention includes a crack line whose resistance varies according to the location and number of cracks occurring on the outer edge of a display panel, and includes a crack detection unit that determines the location and number of cracks according to the resistance value of the crack line, so that the crack inspection process can be simplified as only the crack line resistance needs to be measured to perform a crack inspection.
[0107] Accordingly, since the display device according to one embodiment of the present invention does not require inspection personnel and inspection time for separate crack inspection, the process yield of the display device is improved.
[0108] Hereinafter, a display device according to another embodiment of the present invention will be described with reference to FIG. 6. Since the display device according to one embodiment of the present invention and the display device according to another embodiment of the present invention differ only in the interlayer relationship of a plurality of sub-crack lines, overlapping content will be omitted and the explanation will focus on the differences.
[0109] FIG. 6 is a cross-sectional view of a display device according to another embodiment of the present invention.
[0110] A plurality of sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2) of a display device (200) according to another embodiment of the present invention may be formed on different layers.
[0111] Specifically, referring to FIG. 6, the first central sub-crack line (CLC1) is made of the same material as the gate electrode (G) on the upper part of the buffer layer (120) and can be formed simultaneously when the gate electrode (G) is formed, and the second central sub-crack line (CLC2) is made of the same material as the source electrode (S) and drain electrode (D) on the upper part of the first central sub-crack line (CLC1) and can be formed simultaneously when the source electrode (S) and drain electrode (D) are formed.
[0112] In addition, the first central sub-crack line (CLC1) and the second central sub-crack line (CLC2) are electrically connected through a crack line contact hole (CCT) formed in the interlayer insulation layer (132), so that the first central sub-crack line (CLC1) and the second central sub-crack line (CLC2) can be connected in parallel.
[0113] Conversely, the second central sub-crack line (CLC2) is made of the same material as the gate electrode (G) on the upper part of the buffer layer (120) and can be formed simultaneously when the gate electrode (G) is formed, and the first central sub-crack line (CLC1) is made of the same material as the source electrode (S) and drain electrode (D) on the upper part of the first central sub-crack line (CLC1) and can be formed simultaneously when the source electrode (S) and drain electrode (D) are formed.
[0114] In a display device (200) according to another embodiment of the present invention, a plurality of sub-crack lines (CLL1, CLL2, CLC1, CLC2, CLR1, CLR2) are formed on different layers, thereby reducing the area where crack lines (CL) are placed in a non-display area (NA).
[0115] Accordingly, the display device according to another embodiment of the present invention has the effect of reducing the non-display area, so the bezel area of the display device can be minimized.
[0116] A display device according to one embodiment of the present invention can be described as follows.
[0117] A display device according to one embodiment of the present invention comprises a display panel having a display area and a non-display area, a transistor disposed in the display area and including a gate electrode, a source electrode, and a drain electrode, a crack line disposed in the non-display area, and a first crack pad and a second crack pad connected to both ends of the crack line, wherein the crack line is connected in series and includes a plurality of crack line units having different resistances, and each of the plurality of crack line units includes a plurality of sub-crack lines connected in parallel, thereby improving crack detection inspection efficiency.
[0118] According to another feature of the present invention, a crack detection unit connected to a first crack pad and a second crack pad and detecting a crack in a crack line may be further included.
[0119] According to another feature of the present invention, the crack line can be formed on the same layer as the source electrode and the drain electrode.
[0120] According to another feature of the present invention, the crack line can be formed on the same layer as the gate electrode.
[0121] According to another feature of the present invention, a plurality of crack line units may be composed of a left crack line unit disposed in the left area of the non-display area, a right crack line unit disposed in the right area of the non-display area, and a central crack line unit disposed in the central area of the non-display area.
[0122] According to another feature of the present invention, the left crack line unit may include a first left sub-crack line and a second left sub-crack line connected in parallel, the right crack line unit may include a first right sub-crack line and a second right sub-crack line connected in parallel, and the center crack line unit may include a first center sub-crack line and a second center sub-crack line connected in parallel.
[0123] According to another feature of the present invention, the resistance of the first left sub-crack line and the resistance of the second left sub-crack line are the same, the resistance of the first right sub-crack line and the resistance of the second right sub-crack line are the same, and the resistance of the first central sub-crack line and the resistance of the second central sub-crack line may be the same.
[0124] According to another feature of the present invention, the first left sub-crack line, the first central sub-crack line, and the first right sub-crack line are formed on the same layer as the gate electrode, and the second left sub-crack line, the second central sub-crack line, and the second right sub-crack line can be formed on the same layer as the source electrode drain electrode.
[0125] According to another feature of the present invention, the first left sub-crack line, the first central sub-crack line, and the first right sub-crack line are formed on the same layer as the source electrode and the drain electrode, and the second left sub-crack line, the second central sub-crack line, and the second right sub-crack line can be formed on the same layer as the gate electrode.
[0126] A display device according to another embodiment of the present invention includes a substrate in which a plurality of pixels are defined, a crack line surrounding the plurality of pixels, and a crack detection unit for measuring the resistance of the crack line, wherein the resistance of the crack line varies differently depending on the location and number of cracks, so that the location and number of cracks can be identified during crack inspection.
[0127] According to another feature of the present invention, the crack detection unit can detect the resistance of the crack line and determine the location and number of cracks occurring.
[0128] According to another feature of the present invention, the resistance of the crack line may increase as the number of cracks increases.
[0129] According to another feature of the present invention, a crack line comprises a plurality of crack line units having different resistances that are connected in series along the outer edge of a substrate, and each of the plurality of crack line units may comprise a plurality of sub-crack lines connected in parallel.
[0130] According to another feature of the present invention, the resistance of a crack line unit placed in an area where a crack has occurred among a plurality of crack line units can be increased.
[0131] Although embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments and can be implemented with various modifications within the scope of the technical spirit of the present invention.
[0132] Accordingly, the embodiments disclosed in this invention are intended to illustrate, not limit, the technical concept of the invention, and the scope of the technical concept of the invention is not limited by these embodiments. The scope of protection of this invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of this invention. Explanation of the symbols
[0133] 100, 200: Display device 110: Substrate 120: Buffer layer 131: Gate insulation layer 132: Interlayer insulation layer 140: Organic light-emitting diode 141: Anode 142: Organic light-emitting layer 143: Cathode 150: Bag section 151: First bag layer 152: Foreign matter compensation layer 153: Second bag layer T: Thin-film transistor G: Gate electrode AT: Active layer S: Source electrode D: Drain electrode CL: Crack line CLL: Left Crack Line Unit CLC: Central Crack Line Unit CLR: Right Crack Line Unit CLL1: 1st left sub-crack line CLL2: 2nd left sub-crack line CLC1: 1st Central Sub-crack Line CLC2: 2nd Central Sub-crack Line CLR1: 1st right sub-crack line CLR2: 2nd right sub-crack line CCT: Crack contact hole
Claims
Claim 1 A substrate comprising a display area and a non-display area; a thin-film transistor disposed in the display area and comprising a source electrode, a drain electrode, a gate electrode, and an active layer; a planarization layer disposed on the thin-film transistor; an organic light-emitting device disposed on the planarization layer and comprising an anode, an organic light-emitting layer, and a cathode; an encapsulation portion disposed on the organic light-emitting device and comprising a first encapsulation layer composed of an inorganic material, a foreign matter compensation layer composed of an organic material, and a second encapsulation layer composed of an inorganic material; a gate driver disposed in the form of a gate-in-panel (GIP) on both sides of the non-display area; at least two crack lines disposed outside the gate driver in the non-display area; a first crack pad and a second crack pad connected to both ends of the at least two crack lines; and a crack detection portion connected to the first crack pad and the second crack pad to detect cracks in the at least two crack lines. A display device comprising a crack detection unit and a connecting wire connecting the first crack pad and the second crack pad, wherein at least one of the first sealing layer and the second sealing layer of the sealing unit overlaps with at least one of the at least two crack lines, and in a plan view, the connecting wire extends in a first direction from the outer edge of the substrate on which the first crack pad and the second crack pad are disposed toward the inside, and extends in a second direction different from the first direction to be connected to the crack detection unit. Claim 2 A display device according to claim 1, characterized in that at least one of the at least two crack lines is disposed on the same layer as the gate electrode. Claim 3 A display device according to claim 1, characterized in that at least two crack lines are all disposed on the same layer as the gate electrode. Claim 4 A display device according to claim 1, characterized in that at least one of the first and second bag layers of the bag portion overlaps with at least two crack lines. Claim 5 A display device according to claim 1, characterized in that at least one of the at least two crack lines is formed on the same layer as the source electrode and the drain electrode. Claim 6 A display device according to claim 1, wherein each of the at least two crack lines comprises a left crack line unit disposed in the left area of the non-display area, a right crack line unit disposed in the right area of the non-display area, and a central crack line unit disposed in the central area of the non-display area. Claim 7 A display device according to claim 6, wherein the resistance of the left crack line unit, the resistance of the right crack line unit, and the resistance of the central crack line unit are different from each other. Claim 8 delete
Citation Information
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