Substrate processing apparatus and substrate processing method

Abstract

The present invention aims to provide a substrate processing apparatus and a substrate processing method capable of suppressing the collapse of a pattern formed on a substrate such as a wafer. A substrate processing device is a substrate processing device that dries a substrate having a liquid film formed on a pattern forming surface using a supercritical fluid, and comprises a processing vessel that receives said substrate and supplies said supercritical fluid, and a substrate holding member that supports said substrate from below with said pattern forming surface facing upward and holds said substrate within said processing vessel, said substrate holding member is capable of moving in and out between a processing position within said processing vessel and a retracted position from said processing vessel through an opening provided in said processing vessel, said substrate holding member includes a plurality of temperature control mechanisms for adjusting the temperature of said substrate, and has a control member that controls said plurality of temperature control mechanisms such that when said substrate holding member is in the retracted position, the maximum temperature and minimum temperature within said substrate held in said substrate holding member fall within a predetermined temperature range.

Description

Technology Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] In the manufacturing process of a semiconductor device in which a stacked structure of an integrated circuit is formed on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), liquid treatment such as chemical cleaning or wet etching is performed. When removing liquids attached to the surface of the wafer through such liquid treatment, a drying method using a supercritical treatment fluid has recently been used.

[0003] Patent Document 1 discloses a substrate processing apparatus that transfers a wafer formed on a liquid film pattern forming surface of isopropyl alcohol to a supercritical processing apparatus to perform drying. Prior art literature

[0004] [Patent Document 1] Japanese Patent Publication No. 2018-074103 The problem to be solved

[0005] The present disclosure provides a substrate processing apparatus and a substrate processing method capable of suppressing the breakdown of a pattern formed on a substrate such as a wafer. means of solving the problem

[0006] A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus for drying a substrate having a liquid film formed on a pattern forming surface using a supercritical fluid, comprising: a processing vessel that receives said substrate and supplies said supercritical fluid; and a substrate holding member that supports said substrate from below with the pattern forming surface facing upward and holds said substrate within said processing vessel, wherein the substrate holding member is capable of moving in and out between a processing position within said processing vessel and a retracted position from said processing vessel through an opening provided in said processing vessel, and the substrate holding member comprises a plurality of temperature control mechanisms for adjusting the temperature of said substrate, and a control member that controls said plurality of temperature control mechanisms such that when said substrate holding member is in the retracted position, the maximum temperature and minimum temperature within said substrate held in said substrate holding member fall within a predetermined temperature range. Effects of the invention

[0007] According to the present disclosure, the collapse of a pattern formed on a substrate can be suppressed. Brief explanation of the drawing

[0008] FIG. 1 is a diagram showing an example of the configuration of a substrate processing device according to an embodiment. Figure 2 is a diagram showing an example of the configuration of a liquid treatment unit. FIG. 3 is a schematic perspective view showing an example of the configuration of a drying unit. Figure 4 is a schematic cross-sectional view showing an example of the configuration of a drying unit. Figure 5 is a piping system diagram showing an example of the configuration of a drying unit. Figure 6 is a diagram showing the drying mechanism of IPA. Figure 7 is a drawing showing an example of the configuration of a retaining plate. Figure 8 is a diagram showing an example of the operation of the retaining plate illustrated in Figure 7. Figure 9 is a drawing showing another configuration example of a retaining plate. FIG. 10 is a diagram showing an example of the operation of the retaining plate illustrated in FIG. 9. Specific details for implementing the invention

[0009] Hereinafter, embodiments of the substrate processing system and processing fluid supply method disclosed herein will be described in detail with reference to the attached drawings. Furthermore, the present disclosure is not limited by the embodiments described below. Additionally, it should be noted that the drawings are schematic and that the dimensional relationships of each element and the ratios of each element may differ from reality. Furthermore, there may be parts in which the dimensional relationships or ratios differ from one another among the drawings.

[0010] <Configuration of Substrate Processing Device>

[0011] First, the configuration of the substrate processing device (1) according to the embodiment will be explained with reference to FIG. 1. FIG. 1 is a diagram showing an example of the configuration of the substrate processing device (1) according to the embodiment. In addition, below, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the Z-axis forward direction is defined as the vertical upward direction.

[0012] As illustrated in FIG. 1, the substrate processing device (1) comprises an incoming / outgoing station (2) and a processing station (3). The incoming / outgoing station (2) and the processing station (3) are installed adjacent to each other.

[0013] The incoming / outgoing station (2) is equipped with a carrier placement section (11) and a return section (12). In the carrier placement section (11), a plurality of carriers (C) are arranged to receive a plurality of semiconductor wafers (W) [hereinafter referred to as "wafers (W)"] in a horizontal state.

[0014] The return section (12) is installed adjacent to the carrier placement section (11). Inside the return section (12), a return device (13) and a delivery section (14) are arranged.

[0015] The transport device (13) is equipped with a wafer holding mechanism for holding a wafer (W). Additionally, the transport device (13) is capable of moving in the horizontal and vertical directions and rotating around a vertical axis, and transports the wafer (W) between the carrier (C) and the transfer unit (14) using the wafer holding mechanism.

[0016] The processing station (3) is installed adjacent to the return section (12). The processing station (3) is equipped with a return block (4) and a plurality of processing blocks (5).

[0017] The return block (4) is provided with a return area (15) and a return device (16). The return area (15) is, for example, a rectangular area extending along the arrangement direction (X-axis direction) of the incoming / outgoing station (2) and the processing station (3). A return device (16) is disposed in the return area (15).

[0018] The transport device (16) is equipped with a wafer holding mechanism for holding a wafer (W). Additionally, the transport device (16) is capable of moving in the horizontal and vertical directions and rotating around a vertical axis, and transports the wafer (W) between the transfer unit (14) and a plurality of processing blocks (5) using the wafer holding mechanism.

[0019] A plurality of processing blocks (5) are arranged adjacent to the return area (15) on both sides of the return area (15). Specifically, the plurality of processing blocks (5) are arranged on one side (Y-axis forward direction side) and the other side (Y-axis negative direction side) of the return area (15) in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the incoming / outgoing station (2) and the processing station (3).

[0020] Additionally, although not shown, a plurality of processing blocks (5) are arranged in multiple stages (e.g., three stages) along the vertical direction. And, the transfer of wafers (W) between the processing blocks (5) arranged in each stage and the transfer unit (14) is carried out by one transfer device (16) arranged in the transfer block (4). Also, the number of stages of the plurality of processing blocks (5) is not limited to three stages.

[0021] Each processing block (5) is equipped with a liquid processing unit (17) and a drying unit (18). The drying unit (18) is an example of a substrate processing unit.

[0022] The liquid treatment unit (17) performs a cleaning treatment to clean the upper surface, which is the pattern forming surface of the wafer (W). In addition, the liquid treatment unit (17) performs a liquid film forming treatment to form a liquid film on the upper surface of the wafer (W) after the cleaning treatment. The configuration of the liquid treatment unit (17) will be described later.

[0023] The drying unit (18) performs a supercritical drying treatment on the wafer (W) after the liquid film formation treatment. Specifically, the drying unit (18) dries the wafer (W) after the liquid film formation treatment by bringing the wafer (W) into contact with a supercritical treatment fluid (hereinafter also referred to as "supercritical fluid"). The configuration of the drying unit (18) will be described later.

[0024] The liquid treatment unit (17) and the drying unit (18) are arranged along the return area (15) (i.e., along the X-axis direction). The liquid treatment unit (17) is positioned closer to the incoming / outgoing station (2) than the drying unit (18).

[0025] In this way, each processing block (5) is equipped with one liquid processing unit (17) and one drying unit (18). That is, the substrate processing device (1) has an equal number of liquid processing units (17) and drying units (18) installed.

[0026] Additionally, the drying unit (18) comprises a processing area (181) where supercritical drying treatment is performed, and a transfer area (182) where the wafer (W) is transferred between the transfer block (4) and the processing area (181). These processing area (181) and transfer area (182) are arranged along the transfer area (15).

[0027] Specifically, the transfer area (182) is positioned closer to the liquid treatment unit (17) than the processing area (181). That is, in each processing block (5), the liquid treatment unit (17), the transfer area (182), and the processing area (181) are arranged in this order along the return area (15).

[0028] As illustrated in FIG. 1, the substrate processing device (1) is equipped with a control unit (6). The control unit (6) is, for example, a computer and is equipped with an arithmetic unit (7) and a memory unit (8).

[0029] The control unit (6) includes a microcomputer or various circuits having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The CPU of such a microcomputer realizes control of the conveying device (13, 16), liquid processing unit (17), and drying unit (18), etc. by reading and executing a program stored in the ROM.

[0030] In addition, such a program may be stored in a computer-readable storage medium and installed from the storage medium into the memory unit (8) of the control unit (6). Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), a memory card, etc.

[0031] The memory unit (8) is realized by a semiconductor memory device such as RAM or flash memory, or by a memory device such as a hard disk or optical disk.

[0032] In the substrate processing device (1) configured as described above, first, the conveying device (13) of the incoming / outgoing station (2) takes out a wafer (W) from a carrier (C) placed in the carrier placement section (11) and places the taken-out wafer (W) in the transfer section (14). The wafer (W) placed in the transfer section (14) is taken out from the transfer section (14) by the conveying device (16) of the processing station (3) and brought into the liquid processing unit (17).

[0033] A wafer (W) introduced into the liquid treatment unit (17) is removed from the liquid treatment unit (17) by a return device (16) after being cleaned and liquid film formed by the liquid treatment unit (17). The wafer (W) removed from the liquid treatment unit (17) is introduced into the drying unit (18) by the return device (16) and is dried by the drying unit (18).

[0034] A wafer (W) that has been dried by a drying unit (18) is removed from the drying unit (18) by a conveying device (16) and placed in a transfer unit (14). Then, the wafer (W) that has finished processing and is placed in the transfer unit (14) is returned to the carrier (C) of the carrier placement unit (11) by a conveying device (13).

[0035] <Composition of Liquid Treatment Unit>

[0036] Next, the configuration of the liquid treatment unit (17) will be explained with reference to FIG. 2. FIG. 2 is a diagram showing an example of the configuration of the liquid treatment unit (17). The liquid treatment unit (17) is configured as a single-wafer cleaning device that cleans wafers (W) one by one, for example, by spin cleaning.

[0037] As shown in FIG. 2, the liquid treatment unit (17) holds the wafer (W) nearly horizontally with a wafer holding mechanism (25) placed within an outer chamber (23) that forms a treatment space, and rotates the wafer (W) by rotating the wafer holding mechanism (25) around a vertical axis.

[0038] And, the liquid treatment unit (17) performs a cleaning treatment on the upper surface of the wafer (W) by introducing a nozzle arm (26) onto the upper surface of the rotating wafer (W) and supplying a chemical solution or a rinse solution in a predetermined order from a chemical solution nozzle (26a) installed at the tip of the nozzle arm (26).

[0039] In addition, a chemical solution supply path (25a) is formed inside the wafer holding mechanism (25) of the liquid treatment unit (17). Then, the lower surface of the wafer (W) is also cleaned by the chemical solution or rinse solution supplied from this chemical solution supply path (25a).

[0040] For example, the cleaning treatment is first performed to remove particles or organic contaminants using an alkaline chemical solution, SC1 (a mixture of ammonia and hydrogen peroxide). Next, a rinsing cleaning is performed using a rinsing solution, deionized water (hereinafter referred to as "DIW").

[0041] Next, the natural oxide film is removed using an aqueous solution of dilute hydrofluoric acid (hereinafter referred to as "DHF"), which is an acidic weak agent, and then rinse cleaning is performed using DIW.

[0042] The aforementioned various liquid medicines are collected in the outer chamber (23) or the inner cup (24) disposed within the outer chamber (23), and are discharged from the drain port (23a) provided at the bottom of the outer chamber (23) or the drain port (24a) provided at the bottom of the inner cup (24). Additionally, the atmosphere inside the outer chamber (23) is exhausted from the exhaust port (23b) provided at the bottom of the outer chamber (23).

[0043] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid treatment unit (17) supplies liquid IPA (IsoPropyl Alcohol) (hereinafter referred to as "IPA liquid") to the upper and lower surfaces of the wafer (W) while rotating the wafer holding mechanism (25). Accordingly, the DIW remaining on both sides of the wafer (W) is replaced with IPA. After that, the liquid treatment unit (17) slowly stops the rotation of the wafer holding mechanism (25).

[0044] The wafer (W), having finished the liquid film formation treatment, is transferred to a transport device (16) by a transfer mechanism not shown installed in the wafer holding mechanism (25) while having a liquid film of IPA formed on its upper surface, and is then discharged from the liquid treatment unit (17).

[0045] The liquid film formed on the wafer (W) prevents pattern collapse from occurring when the liquid on the upper surface of the wafer (W) evaporates (vaporizes) during the transfer of the wafer (W) from the liquid treatment unit (17) to the drying unit (18) or during the loading operation into the drying unit (18).

[0046] <Composition of the Drying Unit>

[0047] Next, the configuration of the drying unit (18) will be explained with reference to FIGS. 3 to 5. FIG. 3 is a schematic perspective view showing an example of the configuration of the drying unit (18). FIG. 4 is a schematic cross-sectional view showing an example of the configuration of the drying unit (18). FIG. 5 is a piping system diagram showing an example of the configuration of the drying unit (18).

[0048] As illustrated in FIGS. 3 and 4, the drying unit (18) has a processing container (311) in a processing area (181). An opening (312) for the loading / unloading of a wafer (W) is formed in the processing container (311). The drying unit (18) also has a holding plate (316) (substrate holding part) that holds the wafer (W) to be processed horizontally, and a cover member (315) that supports the holding plate (316) and seals the opening (312) when the wafer (W) is brought into the processing container (311). The holding plate (316) supports the wafer (W) from below with the pattern forming surface (upper surface) on which the liquid film is formed by the liquid processing unit (17) facing upward, and holds the wafer (W) inside the processing container (311). The retaining plate (316) is capable of moving back and forth between a processing position within the processing container (311) and a retracted position from the processing container (311) through an opening (312) provided in the processing container (311). The processing position within the processing container (311) is within the processing area (181), and the retracted position from the processing container (311) is within the transfer area (182).

[0049] The processing vessel (311) is a vessel in which a processing space capable of accommodating, for example, a wafer (W) with a diameter of 300 mm is formed internally. A fluid supply header (317) is installed on one end of the processing vessel (311), and a fluid discharge header (318) is installed on the other end. In the illustrated example, the fluid supply header (317) includes a block body having a plurality of openings, and the fluid discharge header (318) includes a tube having a plurality of openings (fluid discharge ports). It is preferable that the first fluid supply port of the fluid supply header (317) be located at a position slightly higher than the upper surface of the wafer (W) held by the holding plate (316).

[0050] The configuration of the fluid supply header (317) and the fluid discharge header (318) is not limited to the illustrated example; for instance, the fluid discharge header (318) may be formed from a block, and the fluid supply header (317) may be formed from a pipe.

[0051] When viewed from below, the holding plate (316) covers almost the entire lower surface of the wafer (W). The holding plate (316) has an opening (316a) at the end on the side of the cover member (315). The processing fluid in the upper space of the holding plate (316) passes through the opening (316a) and is guided to the fluid discharge header (318). For example, the holding plate (316) is made of stainless steel, and the thermal conductivity of the holding plate (316) is approximately 16.7 W / (m·K).

[0052] The fluid supply header (317) supplies the processing fluid into the processing vessel (311) substantially in a horizontal direction. The horizontal direction referred to here is a direction perpendicular to the vertical direction in which gravity acts, and is typically a direction parallel to the direction in which the flat surface of the wafer (W) held on the holding plate (316) extends.

[0053] Through the fluid discharge header (318), the fluid inside the processing vessel (311) is discharged to the outside of the processing vessel (311). The fluid discharged through the fluid discharge header (318) includes, in addition to the processing fluid supplied into the processing vessel (311) through the fluid supply header (317), IPA attached to the surface of the wafer (W) and dissolved in the processing fluid.

[0054] A fluid supply nozzle (341) for supplying a processing fluid into the interior of the processing vessel (311) is installed at the bottom portion of the processing vessel (311). In the illustrated example, the fluid supply nozzle (341) includes an opening formed in the bottom wall of the processing vessel (311). The fluid supply nozzle (341) is located below (e.g., directly below) the center of the wafer (W) and supplies the processing fluid into the processing vessel (311) toward the center of the wafer (W) (e.g., vertically upward).

[0055] The drying unit (18) further comprises a compression mechanism not shown. This compression mechanism serves to compress the cover member (315) toward the processing vessel (311) against the internal pressure caused by the supercritical processing fluid supplied into the processing space, and to seal the processing space. Additionally, it is preferable to install insulation, tape heaters, etc. (not shown) on the ceiling and floor walls of the processing vessel (311) so that the processing fluid supplied into the processing space can maintain a supercritical temperature.

[0056] As illustrated in FIG. 5, the drying unit (18) has a fluid supply tank (51) which is a source of the processing fluid. A main supply line (50) is connected to the fluid supply tank (51). The main supply line (50) is branched in the middle into a first supply line (63) connected to a fluid supply header (317) inside a processing vessel (311) and a second supply line (64) connected to a fluid supply nozzle (341).

[0057] Between the fluid supply tank (51) and the fluid supply header (317) [i.e., the main supply line (50) and the first supply line (63) connected thereto], a vaporizer (71) and an opening / closing valve (55a) are installed in this order from the upstream side. The vaporizer (71) vaporizes the processing fluid supplied from the fluid supply tank (51) and supplies gas at a predetermined temperature to the downstream side. The second supply line (64) branches off from the main supply line (50) at a location between the vaporizer (71) and the opening / closing valve (55a). An opening / closing valve (55b) is installed in the second supply line (64).

[0058] A discharge line (65) is connected to a fluid discharge header (318) inside a processing vessel (311). An opening / closing valve (55c) and a pressure regulating valve (55d) are installed sequentially in the discharge line (65) from the upstream side. The opening of the pressure regulating valve (55d) is controlled by a control unit (6). The control unit (6) performs, for example, PID control (Proportional-Integral-Differential Controller) of the opening of the pressure regulating valve (55d).

[0059] A line heater (H1) is installed between the vaporizer (71) and the shut-off valves (55a and 55b). Line heaters (H2 and H3) are installed between the shut-off valve (55b) and the fluid supply nozzle (341). The line heater (H2) is installed upstream of the line heater (H3). A line heater (H4) is installed between the shut-off valve (55a) and the fluid supply header (317). The set temperatures of the line heaters (H1 to H4) can be independently controlled by the control unit (6).

[0060] Pressure sensors for detecting pressure within the line and temperature sensors for detecting the temperature of the fluid are installed at various locations along the line through which the fluid of the drying unit (18) flows. Additionally, a pressure sensor (53) for detecting pressure within the processing vessel (311) and a temperature sensor (54) for detecting the temperature of the fluid within the processing vessel (311) are installed.

[0061] The control unit (6) receives measurement signals from various sensors [pressure sensor (53), temperature sensor (54), etc.] shown in FIG. 5 and transmits control signals [opening / closing signals of opening / closing valves (55a to 55c), opening signals of pressure regulating valves (55d), etc.] to various functional elements.

[0062] [Supercritical Drying Treatment]

[0063] Next, the drying mechanism of IPA using a supercritical processing fluid [e.g., carbon dioxide (CO2)] will be briefly explained with reference to Fig. 6. Fig. 6 is a diagram showing the drying mechanism of IPA.

[0064] Immediately after the supercritical processing fluid (R) is introduced into the processing vessel (311), only IPA exists in the concave portion of the pattern (P) of the wafer (W), as shown in FIG. 6(a).

[0065] The IPA in the concave area gradually dissolves into the treatment fluid (R) by coming into contact with the supercritical treatment fluid (R), and gradually replaces the treatment fluid (R) as shown in FIG. 6(b). At this time, in addition to the IPA and the treatment fluid (R), a mixed fluid (M) in which the IPA and the treatment fluid (R) are mixed exists in the concave area.

[0066] As the replacement of IPA with the treatment fluid (R) proceeds within the concave portion, the IPA present within the concave portion decreases, and finally, as shown in FIG. 6(c), only the supercritical treatment fluid (R) remains within the concave portion.

[0067] After the IPA is removed from the concave area, the pressure inside the processing vessel (311) is lowered to atmospheric pressure, so that the processing fluid (R) changes from a supercritical state to a gaseous state as shown in FIG. 6(d), and the inside of the concave area is occupied only by gas. In this way, the IPA in the concave area of ​​the pattern (P) is removed, and the drying process of the wafer (W) is completed.

[0068] Meanwhile, in the drying process using the processing fluid (R) in the substrate processing device (1) described so far, there are cases where pattern collapse occurs. As one of the causes of pattern collapse, it can be assumed that when the wafer (W) is in a retracted position within the transfer area (182), the uniformity of the temperature distribution of the wafer (W) decreases, and the liquid film of IPA flows due to the Marangoni Force. In addition, as another cause of pattern collapse, it can be assumed that some of the IPA is vaporized. In particular, it is thought that flow or vaporization of IPA is likely to occur when the temperature of the processing vessel (311) after the drying process is high while the wafer (W) is in a retracted position within the transfer area (182).

[0069] As a result of further careful examination based on these findings, it was discovered that by installing a temperature control mechanism for adjusting the temperature of a wafer (W) on a holding plate (316) and controlling the temperature control mechanism by a control unit (6) so that when the holding plate (316) is in a retracted position, the maximum and minimum temperatures within the wafer (W) held on the holding plate (316) fall within a predetermined temperature range, the flow and vaporization of IPA in the retracted position can be suppressed and pattern collapse can be suppressed.

[0070] (Maintenance plate)

[0071] Here, the details of the retaining plate (316) are described. FIG. 7 is a drawing showing an example of the configuration of the retaining plate (316).

[0072] A first example of a holding plate (316) has a temperature control mechanism (110) for controlling the temperature of a wafer (W) and a temperature sensor (120), as shown in FIG. 7. The holding plate (316) has three openings (30) through which pins for lifting and lowering the wafer (W) pass.

[0073] A plurality of temperature control mechanisms (110) are installed within a substrate placement area (130) where a wafer (W) of a holding plate (316) is placed. The temperature control mechanisms (110) are arranged, for example, in an island shape. For example, the substrate placement area (130) is a circular area, and one temperature control mechanism (110) is placed at the center of the substrate placement area (130), and other temperature control mechanisms (110) are arranged on a plurality of roughly concentric circles that share a center with the substrate placement area (130). The temperature control mechanisms (110) include, for example, a Peltier element, a silicone rubber heater, an aluminum foil heater, or a carbon heater. The heat output from each temperature control mechanism (110) can be independently controlled by a control unit (6). For example, the temperature control mechanisms (110) are arranged so that the substrate placement area (130) can be adjusted to a two-stage temperature in at least the forward / backward direction (X-axis direction) of the holding plate (316).

[0074] A plurality of temperature sensors (120) are installed within the substrate placement area (130). The temperature sensors (120) are arranged, for example, in a circular or arc shape. For example, the temperature sensors (120) are arranged on a plurality of roughly concentric circles that share a common center with the substrate placement area (130). The temperature sensors (120) include, for example, thermocouples, thermistors, or platinum resistors.

[0075] In a drying process using a holding plate (316) of this configuration, first, a wafer (W) is placed on the holding plate (316) in the transfer area (182) from a conveying device (16) placed in the conveying area (15). The control unit (6) receives a temperature measurement result from a temperature sensor (120) and controls the temperature adjustment mechanism (110) based on the temperature measurement result. That is, the temperature sensor (120) controls the temperature adjustment mechanism (110) so that the maximum temperature and minimum temperature within the wafer (W) held on the holding plate (316) fall within a predetermined temperature range. The difference between the maximum temperature and the minimum temperature within the predetermined temperature range is, for example, 3°C or less, preferably 2°C or less, and more preferably 1°C or less.

[0076] When the wafer (W) is in a retracted position within the transfer area (182) and the temperature of the processing vessel (311) is rising, the temperature of the wafer (W) tends to be higher in the part closer to the processing vessel (311) and lower in the part farther away from the processing vessel (311). For example, when the temperature of the wafer (W) is about 24°C to 26°C while it is in the transport area (15), the temperature of the part of the wafer (W) close to the processing vessel (311) can rise to about 32°C while the wafer (W) is waiting in the retracted position within the transfer area (182). In this case, as shown in FIG. 8, the control unit (6) performs control such that the heat output by the temperature control mechanism (110) is lower in the first area (131) close to the processing vessel (311) within the substrate placement area (130) than in the second area (132) farther from the processing vessel (311). For example, the temperature control mechanism (110) in the first region (131) performs temperature control to cool the wafer (W), and the temperature control mechanism (110) in the second region (132) performs temperature control to heat the wafer (W). Additionally, for example, the temperature control mechanism (110) in the first region (131) performs temperature control to cool the wafer (W), and the temperature control mechanism (110) in the second region (132) may not perform temperature control. Furthermore, in FIG. 8, it is shown that the denser the shell shape applied to the temperature control mechanism (110), the higher the heat output. The same applies to FIG. 10, which will be described later.

[0077] As a result of this temperature adjustment, the difference between the temperature of the first region (131) and the temperature of the second region (132) is reduced, and the difference between the highest and lowest temperatures within the wafer (W) is also reduced. Therefore, the flow of the liquid film due to the Marangoni force is suppressed, and the collapse of the pattern due to the flow of the liquid film can be suppressed. In addition, by keeping the highest temperature within the wafer (W) within a predetermined temperature range, the vaporization of the liquid film is suppressed, and the collapse of the pattern due to the vaporization of the liquid film can also be suppressed.

[0078] If temperature control of the wafer (W) using the temperature control mechanism (110) is not performed, flow and vaporization of IPA occur, particularly at the edge portion of the wafer (W) close to the processing container (311), and pattern collapse is likely to occur. On the other hand, by performing temperature control of the wafer (W) as described above, pattern collapse at the edge portion of the wafer (W) close to the processing container (311) can be suppressed.

[0079] In addition, the output control of the temperature adjustment mechanism (110) by the control unit (6) may be 2 stages or 3 stages or more. The more stages there are, the more uniformity the temperature distribution of the wafer (W) can be increased.

[0080] It is preferable that the temperature control mechanism (110) by the control unit (6) be controlled even when the holding plate (316) is in the retracted position before the holding plate (316) holds the wafer (W). For example, it is preferable that the temperature control mechanism (110) by the control unit (6) be controlled so that the holding plate (316) has a predetermined temperature distribution. By performing such control, the wafer (W) placed on the holding plate (316) can be quickly subjected to temperature control by the temperature control mechanism (110). Accordingly, the wafer (W) becomes less susceptible to the influence of heat from the processing vessel (311).

[0081] It is preferable for the control unit (6) to continue controlling the temperature control mechanism (110) from the time the movement of the holding plate (316) from the retracted position within the transfer area (182) to the processing position within the processing area (181) begins until it is completed. Even while the wafer (W) is affected by the heat within the processing vessel (311) during the movement of the holding plate (316), the continued control of the temperature control mechanism (110) suppresses the flow and vaporization of IPA, thereby suppressing pattern collapse.

[0082] The control unit (6) may continue to control the temperature control mechanism (110) within the processing vessel (311) after the movement of the holding plate (316) to the processing position is completed. Since supercritical fluid flows within the processing vessel (311), there is a concern that the uniformity of the temperature distribution of the wafer (W) may decrease due to the flow of the supercritical fluid. On the other hand, by continuing to control the temperature control mechanism (110) within the processing vessel (311), pattern collapse due to the decrease in the uniformity of the temperature distribution of the wafer (W) can be suppressed even during the flow of the supercritical fluid.

[0083] In addition, the cause of the decrease in the uniformity of the temperature distribution of the wafer (W) occurring when the holding plate (316) is in a retracted position is not only heat from the processing vessel (311). For example, if the temperature in the return area (15) is lower than the temperature in the transfer area (182), the temperature of the part of the holding plate (316) closer to the return area (15) may be lower than the temperature of the part further away from the return area (15), and in such cases, the uniformity of the temperature distribution of the wafer (W) may also decrease. According to the present embodiment, even in such cases, the decrease in the uniformity of the temperature distribution of the wafer (W) can be suppressed by controlling the temperature adjustment mechanism (110) by the control unit (6), thereby suppressing pattern collapse.

[0084] In the above-described embodiment, the temperature control mechanism (110) is arranged in an island shape and the temperature sensor (120) is arranged in a circular or arc shape, but the present disclosure is not limited to such configurations. For example, as shown in FIG. 9, the temperature control mechanism (110) may be arranged in an arc shape and the temperature sensor (120) may be arranged in an island shape.

[0085] When the retaining plate (316) shown in FIG. 9 is used, when the wafer (W) is in a retracted position within the transfer area (182) and the temperature of the processing vessel (311) is rising, as shown in FIG. 10, the control unit (6) performs control such that the heat output by the temperature control mechanism (110) is lower than that of the second area (132) in the first area (131) close to the processing vessel (311) within the substrate placement area (130).

[0086] In the above-described embodiment, although the temperature sensor (120) is installed on the holding plate (316), another temperature sensor may be placed above the retracted position, and the temperature of the wafer (W) or the holding plate (316) may be measured by the temperature sensor. In this case, the control unit (6) may control the temperature adjustment mechanism (110) based on the result of the temperature measurement by the temperature sensor. Such a temperature sensor is, for example, placed within the space of the transfer area (182). For example, the temperature of multiple points of the wafer (W) or the holding plate (316) may be measured by a single temperature sensor while scanning, or the temperature of multiple points of the wafer (W) or the holding plate (316) may be measured by multiple temperature sensors.

[0087] Although preferred embodiments and the like have been described in detail above, the above embodiments and the like are not limited to the above, and various modifications and substitutions may be made to the above embodiments and the like without departing from the scope described in the patent claims.

Claims

Claim 1 A substrate processing apparatus for drying a substrate having a liquid film formed on a pattern forming surface using a supercritical fluid, comprising: a processing vessel that receives the substrate and supplies the supercritical fluid; and a substrate holding member that supports the substrate from below with the pattern forming surface facing upward and holds the substrate within the processing vessel, wherein the substrate holding member is capable of moving back and forth between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel, and wherein the substrate holding member includes a plurality of temperature control mechanisms for adjusting the temperature of the substrate, and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, and wherein, when the substrate holding member is in the retracted position, the control member controls the temperature control mechanisms such that the temperature of the higher part of the substrate is lowered more significantly. Claim 2 A substrate processing apparatus according to claim 1, wherein the control unit performs control such that when the substrate holding unit is in the retracted position, the output of heat by the temperature control mechanism is lower than that of a second area further from the processing vessel than that of the first area within the substrate placement area where the substrate of the substrate holding unit is placed. Claim 3 A substrate processing apparatus for drying a substrate having a liquid film formed on a pattern forming surface using a supercritical fluid, comprising: a processing vessel that receives the substrate and supplies the supercritical fluid; and a substrate holding member that supports the substrate from below with the pattern forming surface facing upward and holds the substrate within the processing vessel, wherein the substrate holding member is capable of moving in and out between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel, and wherein the substrate holding member comprises a plurality of temperature control mechanisms for adjusting the temperature of the substrate, and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, and wherein, when the substrate holding member is in the retracted position, the control member performs control such that the heat output by the temperature control mechanism is lower than that of a second region that is further from the processing vessel than the first region within the substrate placement area where the substrate of the substrate holding member is placed, wherein the heat output by the temperature control mechanism is lower than that of the first region within the substrate placement area. Processing device. Claim 4 A substrate processing apparatus according to any one of claims 1 to 3, wherein the control unit continues to control the plurality of temperature adjustment mechanisms from the retraction position of the substrate holding unit to the processing position from the start until the completion. Claim 5 A substrate processing apparatus for drying a substrate having a liquid film formed on a pattern forming surface using a supercritical fluid, comprising: a processing vessel that receives the substrate and supplies the supercritical fluid; a substrate holding member that supports the substrate from below with the pattern forming surface facing upward and holds the substrate within the processing vessel; wherein the substrate holding member is capable of moving back and forth between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel; wherein the substrate holding member includes a plurality of temperature control mechanisms for adjusting the temperature of the substrate; and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, the control member continues to control the plurality of temperature control mechanisms from the time the movement of the substrate holding member from the retracted position to the processing position begins until it is completed. Claim 6 A substrate processing apparatus according to claim 1, 2, 3 or 5, wherein the control unit controls the temperature adjustment mechanism so that the substrate holding unit has a predetermined temperature distribution when the substrate holding unit is in the retracted position before the substrate holding unit holds the substrate. Claim 7 A substrate processing apparatus according to claim 1, 2, 3 or 5, wherein the control unit controls the temperature adjustment mechanism based on the result of the temperature measurement by the temperature sensor, the temperature sensor being positioned above the retraction position and measuring the temperature of a plurality of points of the substrate or the substrate holding part. Claim 8 A substrate processing apparatus according to claim 1, 2, 3 or 5, wherein the substrate holding part is installed with a plurality of temperature sensors for measuring the temperature of the substrate holding part, and the control part controls the temperature adjustment mechanism based on the result of the temperature measurement by the plurality of temperature sensors. Claim 9 A method for processing a substrate using a substrate processing apparatus comprising: a processing vessel for receiving a substrate having a liquid film formed on a pattern forming surface and supplying a supercritical fluid; and a substrate holding member for supporting the substrate from below while the pattern forming surface is facing upward and holding the substrate within the processing vessel, wherein the substrate holding member is capable of moving back and forth between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel, and wherein the substrate holding member comprises a plurality of temperature control mechanisms for adjusting the temperature of the substrate, and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member fall within a predetermined temperature range, and wherein, using the supercritical fluid, the substrate held in the substrate holding member is dried within the processing vessel, and wherein, in the process of controlling the plurality of temperature control mechanisms, when the substrate holding member is in the retracted position, the temperature control mechanisms are controlled such that the temperature of the higher part of the substrate decreases more significantly. Claim 10 A substrate processing method according to claim 9, wherein in a process of controlling the plurality of temperature control mechanisms, when the substrate holding part is in the retracted position, control is performed such that the heat output by the temperature control mechanism is lower than that of a second area further from the processing vessel than that of the first area within the substrate placement area where the substrate of the substrate holding part is placed. Claim 11 A method for processing a substrate using a substrate processing apparatus comprising: a processing vessel for receiving a substrate having a liquid film formed on a pattern forming surface and supplying a supercritical fluid; and a substrate holding member for supporting the substrate from below while the pattern forming surface is facing upward and holding the substrate within the processing vessel, wherein the substrate holding member is capable of moving back and forth between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel, and wherein the substrate holding member includes a plurality of temperature control mechanisms for adjusting the temperature of the substrate, and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, and wherein the method comprises: a process of controlling the plurality of temperature control mechanisms such that, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, and a process of drying the substrate held in the substrate holding member within the processing vessel using the supercritical fluid, wherein in the process of controlling the plurality of temperature control mechanisms, when the substrate holding member is in the retracted position, in a first region within a substrate placement area where the substrate of the substrate holding member is placed, a second region further from the processing vessel than the first region within the substrate placement area. A substrate processing method in which the heat output by the temperature control mechanism is lowered compared to the region. Claim 12 A substrate processing method according to any one of claims 9 to 11, wherein in the process of controlling the plurality of temperature control mechanisms, the control of the plurality of temperature control mechanisms is continued from the time the movement of the substrate holding part from the retracted position to the processing position begins until it is completed. Claim 13 A substrate processing method using a substrate processing apparatus comprising: a processing vessel that receives a substrate having a liquid film formed on a pattern forming surface and supplies a supercritical fluid; and a substrate holding member that supports the substrate from below while the pattern forming surface is facing upward and holds the substrate within the processing vessel, wherein the substrate holding member is capable of moving back and forth between a processing position within the processing vessel and a retracted position from the processing vessel through an opening provided in the processing vessel, and wherein the substrate holding member includes a plurality of temperature control mechanisms for adjusting the temperature of the substrate, and wherein, when the substrate holding member is in the retracted position, the maximum temperature and minimum temperature within the substrate held in the substrate holding member are within a predetermined temperature range, and wherein the substrate held in the substrate holding member is dried within the processing vessel using the supercritical fluid, and wherein, in the process of controlling the plurality of temperature control mechanisms, the control of the plurality of temperature control mechanisms is continued from the time the movement of the substrate holding member from the retracted position to the processing position begins until it is completed. Claim 14 A substrate processing method according to claim 9, 10, 11 or 13, wherein in a process of controlling the plurality of temperature control mechanisms, when the substrate holding member is in the retracted position before the substrate holding member holds the substrate, the substrate holding member controls the temperature control mechanism to have a predetermined temperature distribution. Claim 15 A substrate processing method according to claim 9, 10, 11 or 13, wherein the substrate processing device is positioned above the retraction position and has a temperature sensor that measures the temperature of a plurality of points of the substrate or the substrate holding part, and in a process of controlling the plurality of temperature control mechanisms, the temperature control mechanisms are controlled based on the result of the temperature measurement by the temperature sensor. Claim 16 A substrate processing method according to claim 9, 10, 11 or 13, wherein the substrate processing device is installed in the substrate holding part and has a plurality of temperature sensors for measuring the temperature of the substrate holding part, and in a process for controlling the plurality of temperature control mechanisms, the temperature control mechanisms are controlled based on the result of the temperature measurement by the plurality of temperature sensors.

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