Apparatus and method for processing substrate

Abstract

The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method for depositing a thin film on a substrate using a remote plasma generation method and a hollow cathode plasma (HCP) method. A substrate processing device according to an embodiment of the present invention comprises a remote plasma generation unit that generates a first process material in a plasma state by converting a process gas into plasma, a local plasma generation unit that generates a second process material in a plasma state by converting the first process material into plasma, a process device that performs a thin film deposition process on a substrate using the second process material, and a local control unit that controls the thin film deposition on the substrate, wherein the remote plasma generation unit is provided outside the process device and the local plasma generation unit is provided inside the process device, and the local control unit enables a first cleaning process and a second cleaning process to be performed after the thin film deposition process on the substrate is performed, wherein the first cleaning process includes a process for removing a deposit formed on the inner wall of the process device and the second cleaning process includes a process for removing a deposit formed on the local plasma generation unit.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method for depositing a thin film on a substrate using a remote plasma generation method and a hollow cathode plasma (HCP) method. Background Technology

[0002] Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a source gas can cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer deposition, since a single layer of source gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) can be used to extend the process temperature range. Since PECVD and PEALD enable processing at lower temperatures compared to PECVD and PEALD, the physical properties of the thin film can be improved.

[0004] Thin films can be used to form interlayer insulating films, but if the spacing between wires is fine, the deposition material may not easily penetrate into the gap, and thus the proper formation of the thin film may not be achieved. For example, if the entrance of the gap is narrow, the deposition material cannot penetrate into the interior of the gap due to the film material formed around the entrance, and a void may be formed.

[0005] Therefore, there is a need for an invention that allows the gap to be filled by allowing the deposited material to penetrate into the interior of the gap as well. Prior art literature

[0006] Republic of Korea Published Patent Application No. 10-2019-0044891 (May 2, 2019) The problem to be solved

[0007] The problem that the present invention aims to solve is to provide a substrate processing apparatus and method for depositing a thin film on a substrate using a remote plasma generation method and a hollow cathode plasma (HCP) method.

[0008] The problems of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0009] To achieve the above objective, a substrate processing device according to an embodiment of the present invention comprises a remote plasma generation unit that generates a first process material in a plasma state by converting a process gas into plasma, a local plasma generation unit that generates a second process material in a plasma state by converting the first process material into plasma, a process device that performs a thin film deposition process on a substrate using the second process material, and a local control unit that controls the thin film deposition on the substrate, wherein the remote plasma generation unit is provided outside the process device and the local plasma generation unit is provided inside the process device, and the local control unit enables a first cleaning process and a second cleaning process to be performed after the thin film deposition process on the substrate is performed, wherein the first cleaning process includes a process for removing a deposit formed on the inner wall of the process device and the second cleaning process includes a process for removing a deposit formed on the local plasma generation unit.

[0010] The first cleaning process described above is performed by injecting a cleaning gas into the interior of the process device.

[0011] The above cleaning gas includes a gas containing fluorine (F).

[0012] The second cleaning process described above includes a process of supplying RF power to convert the cleaning gas remaining in the local plasma generator into a plasma state.

[0013] The above substrate processing device further includes a substrate support member that supports the substrate, and the substrate support member can be positioned in one of a first position which is the upper space of the process device, a second position which is the central space of the process device, and a third position which is the lower space of the process device, and the first cleaning process is performed with the substrate support member sequentially positioned in the first position, the second position, and the third position, and the second cleaning process is performed with the substrate support member sequentially positioned in the third position, the second position, and the first position.

[0014] It further includes a plasma transfer line providing a transfer path for transferring a first process material from the remote plasma generation unit to the process device, and an auxiliary plasma generation unit provided in the plasma transfer line for converting the first process material being transferred through the plasma transfer line into plasma.

[0015] The above substrate processing device further includes a remote control unit that controls the auxiliary plasma generator, and the remote control unit supplies RF power to the auxiliary plasma generator to convert the cleaning gas remaining in the plasma transfer line into a plasma state.

[0016] A substrate processing method according to an embodiment of the present invention comprises the steps of: generating a first process material in a plasma state by converting a process gas into plasma; generating a second process material in a plasma state by converting the first process material into plasma; performing a thin film deposition process on a substrate in a process apparatus using the second process material; performing a first cleaning process; and performing a second cleaning process, wherein the first process material is generated outside the process apparatus and the second process material is generated inside the process apparatus, the first cleaning process includes a process for removing a deposit formed on the inner wall of the process apparatus, and the second cleaning process includes a process for removing a deposit formed in a local plasma generating part that generates the second process material.

[0017] The first cleaning process described above is performed by injecting a cleaning gas into the interior of the process device.

[0018] The above cleaning gas includes a gas containing fluorine (F).

[0019] The second cleaning process described above includes a process of supplying RF power to the local plasma generator to convert the cleaning gas remaining in the local plasma generator into a plasma state.

[0020] The process device includes a substrate support member that supports the substrate, and the substrate support member may be positioned in one of a first position which is the upper space of the process device, a second position which is the central space of the process device, and a third position which is the lower space of the process device, and the first cleaning process is performed with the substrate support member sequentially positioned in the first position, the second position, and the third position, and the second cleaning process is performed with the substrate support member sequentially positioned in the third position, the second position, and the first position.

[0021] A plasma transfer line providing a transfer path for transferring a first process material from a remote plasma generation unit that generates the first process material to a process device, and an auxiliary plasma generation unit provided in the plasma transfer line for converting the first process material being transferred through the plasma transfer line into plasma, and the substrate processing method further includes the step of supplying RF power to the auxiliary plasma generation unit so that a cleaning gas remaining in the plasma transfer line is converted into a plasma state.

[0022] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0023] According to the substrate processing apparatus and method of the present invention as described above, since the process material generated by the remote plasma generation method is additionally plasma-converted by the hollow cathode plasma method, there is an advantage in that the plasma conversion efficiency is improved.

[0024] In addition, since the formation of deposits along the movement path of the process material is prevented, there is also the advantage of improved mass producibility and process reliability.

[0025] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description in the claims. Brief explanation of the drawing

[0026] FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a side view of a substrate processing apparatus according to an embodiment of the present invention. Figure 3 is a drawing showing a process apparatus. Figure 4 is a drawing showing that the substrate support is positioned at a second location. Figure 5 is a drawing showing that the substrate support is positioned at a third location. Figure 6 is a diagram showing the first process material being supplied to a process device. Figure 7 is a diagram showing the process gas being supplied to a process apparatus. Figure 8 is a diagram showing the first process material and process gas being supplied to a process device. FIG. 9 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. Figure 10 is a flowchart showing the first cleaning process. Figure 11 is a diagram illustrating the first cleaning process. Figure 12 is a flowchart showing the second cleaning process. FIG. 13 is a diagram showing that a second cleaning process is performed with the substrate support positioned at a third position. FIG. 14 is a diagram showing that a second cleaning process is performed with the substrate support positioned in a second position. FIG. 15 is a diagram showing that a second cleaning process is performed with the substrate support positioned at a first position. Specific details for implementing the invention

[0027] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0028] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0029] FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a side view of a substrate processing apparatus according to an embodiment of the present invention.

[0030] Referring to FIGS. 1 and 2, a substrate processing device (1) according to an embodiment of the present invention comprises a remote plasma generation unit (10), a process device (20), a distribution unit (30), a plasma transfer line (40), an auxiliary plasma generation unit (50), a pressurizing unit (60), a remote power supply unit (70), and a remote control unit (80).

[0031] A remote plasma generator (10) can generate a first process material in a plasma state by converting a process gas into plasma. For example, the remote plasma generator (10) can generate a first process material by converting the process gas into plasma using a hollow cathode plasma (HCP) method. The first process material can be supplied to a process device (20). The process device (20) can perform a thin film deposition process on a substrate using the first process material. Specifically, the process device (20) can generate a second process material by converting the first process material into plasma and perform a thin film deposition process on a substrate using the second process material. In the present invention, the first process material and the second process material may include radicals, ions, and electrons.

[0032] The substrate processing device (1) may include a plurality of process devices (20). A remote plasma generation unit (10) may be provided outside the process device (20) to supply a first process material to the process device (20).

[0033] A plurality of gas transfer lines (11) may be connected to the remote plasma generation unit (10). Different process gases may be transferred through the plurality of gas transfer lines (11). In the present invention, the process gases may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The remote plasma generation unit (10) may individually convert the process gases transferred through the plurality of gas transfer lines (11) into plasma to generate a first process material in a plasma state.

[0034] The remote plasma generator (10) can selectively output process gas and a first process material. For example, the remote plasma generator (10) may output only process gas, output only the first process material, or output both process gas and the first process material. Specifically, the remote plasma generator (10) may output the first process material by plasma-converting the source gas or reaction gas, or output the source purge gas or reaction purge gas as is. Alternatively, the remote plasma generator (10) may output the source gas or reaction gas as is. Alternatively, the remote plasma generator (10) may output the first process material, in which the source gas or reaction gas has been plasma-converted, together with the source gas or reaction gas.

[0035] The distribution unit (30) can distribute a first process material output from a remote plasma generation unit (10). In the present invention, a plurality of process devices (20) may be provided. The first process material distributed by the distribution unit (30) can be supplied to a plurality of process devices (20). Meanwhile, the distribution unit (30) may distribute not only the first process material but also process gas. As described above, the remote plasma generation unit (10) may output process gas that has not been converted into plasma, and the distribution unit (30) can distribute the said process gas into a plurality of units.

[0036] A plasma transfer line (40) can provide a transfer path for transferring a first process material from a remote plasma generation unit (10) to a process device (20). A plurality of plasma transfer lines (40) may be provided. A plurality of plasma transfer lines (40) may branch off from a distribution unit (30) to provide a transfer path for transferring a first process material to a plurality of process devices (20).

[0037] Each of the plurality of plasma transfer lines (40) may be equipped with an auxiliary plasma generator (50). The auxiliary plasma generator (50) can convert the first process material being transferred through the plasma transfer line (40) into plasma. For example, the auxiliary plasma generator (50) can convert the first process material into plasma using a hollow cathode plasma (HCP) method. The first process material can be additionally converted into plasma by the auxiliary plasma generator (50).

[0038] The pressurizing unit (60) is provided at each of the plurality of plasma transfer lines (40) and performs the function of pressurizing the first process material to the local plasma generating unit (600) (see FIG. 3) of the corresponding process device (20) among the plurality of process devices (20). The local plasma generating unit (600) provided inside the process device (20) can additionally convert the first process material into plasma.

[0039] As the first process material is pressurized by the pressurizing unit (60), the process device (20) can receive the first process material having a uniform pressure. As described above, the remote plasma generator (10) may also output a process gas, in which case the pressurizing unit (60) can supply the process gas to the process device (20) at a uniform pressure.

[0040] The remote power supply unit (70) can supply RF power to the remote plasma generation unit (10). When RF power is supplied to the remote plasma generation unit (10), an electric field is formed inside the remote plasma generation unit (10), and the process gas supplied to the remote plasma generation unit (10) can be converted into plasma by the electric field.

[0041] The remote control unit (80) can perform overall control over the remote plasma generation unit (10), the distribution unit (30), the auxiliary plasma generation unit (50), the pressurizing unit (60), and the remote power supply unit (70). For example, the remote control unit (80) can control the remote plasma generation unit (10) to selectively output process gas and a first process material. Additionally, the remote control unit (80) can control the distribution unit (30) to properly distribute the process gas and the first process material output from the remote plasma generation unit (10). Additionally, the remote control unit (80) can control the auxiliary plasma generation unit (50) to determine whether to perform additional plasma conversion of the first process material. Furthermore, the remote control unit (80) can control the pressurizing unit (60) to supply the process gas or the first process material to the process device (20) at a preset pressure.

[0042] Additionally, the remote control unit (80) can supply RF power to the auxiliary plasma generator (50) to convert the cleaning gas remaining in the plasma transfer line (40) into a plasma state. As described below, cleaning gas can be supplied to the process device (20) for a cleaning process for the process device (20). The remote control unit (80) can supply RF power to the auxiliary plasma generator (50) during the cleaning process for the process device (20) or after the cleaning process for the process device (20) is completed. Accordingly, the deposited material accumulated on the inner wall of the plasma transfer line (40) is removed, and smooth gas transfer through the plasma transfer line (40) can be performed.

[0043] FIG. 3 is a drawing showing a process apparatus, FIG. 4 is a drawing showing a substrate support placed at a second position, and FIG. 5 is a drawing showing a substrate support placed at a third position.

[0044] Referring to FIGS. 3 and 4, a process apparatus (20) according to an embodiment of the present invention comprises a process chamber (100), a substrate support (200), a lifting unit (300), a local plasma generation unit (600), a process material supply unit (700), a first local power supply unit (810), a second local power supply unit (820), and a local control unit (900).

[0045] A process apparatus (20) according to an embodiment of the present invention can deposit a thin film on a substrate (W). For example, the process apparatus (20) can deposit a thin film on the substrate (W) using Plasma Enhanced Atomic Layer Deposition (PEALD).

[0046] A process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) provides a space for receiving various components for processing a substrate (W), and the chamber lid (120) may seal the upper opening of the chamber body (110). The chamber lid (120) may support a local plasma generator (600) and a process material supply unit (700). For example, the local plasma generator (600) and the process material supply unit (700) may be stacked and provided on the chamber lid (120).

[0047] The process chamber (100) can provide a process processing space for a substrate (W). The process processing space can be formed by combining the chamber body (110) and the chamber lid (120).

[0048] A substrate entry port (130) for the entry and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, a substrate entry port (130) may be formed on one side of the chamber body (110). The substrate (W) may be brought into the interior of the process chamber (100) or taken out of the process chamber (100) through the substrate entry port (130).

[0049] A shutter (140) may be provided in the process chamber (100). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be brought in or taken out through the substrate entrance (130). When a process is being performed on the substrate (W), the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the outside.

[0050] The substrate support (200) may have a mounting surface on which a substrate (W) can be placed. A process may be performed on the substrate (W) placed on the mounting surface of the substrate support (200). The substrate support (200) may heat the substrate (W). To this end, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater may be transferred to the substrate (W) through the body of the substrate support (200). The heater may serve as an electrode for forming an electric field. As described below, when RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater.

[0051] The lifting unit (300) can generate a driving force to move the substrate support unit (200) in the up and down direction. The internal space of the process chamber (100) may include an upper space, a central space, and a lower space. The substrate support unit (200) may be positioned at a first position corresponding to the upper space of the process chamber (100), at a second position corresponding to the central space of the process chamber (100), or at a third position corresponding to the lower space of the process chamber (100).

[0052] FIG. 3 illustrates a substrate support member (200) positioned in a first position, FIG. 4 illustrates a substrate support member (200) positioned in a second position, and FIG. 5 illustrates a substrate support member (200) positioned in a third position. A thin film deposition process on a substrate (W) is performed while the substrate support member (200) is positioned in the first position, the introduction and removal of the substrate (W) through the substrate entrance / exit port (130) is performed while the substrate support member (200) is positioned in the second position, and a cleaning process on the inside of the process chamber (100) can be performed while the substrate support member (200) is positioned in the third position.

[0053] The local plasma generator (600) can generate a second process material in a plasma state by converting the first process material generated by the remote plasma generator (10) into plasma. The local plasma generator (600) can be provided inside the process chamber (100) and connected to the pressurizing unit (60). Specifically, the local plasma generator (600) can be provided in the chamber lid (120) and can convert the first process material, which is pressurized to a uniform pressure by the pressurizing unit (60), into plasma.

[0054] The local plasma generation unit (600) may include a plasma generation body (610). The plasma generation body (610) may provide a first diffusion space (611) for the diffusion of process gas. The first diffusion space (611) may be provided for the diffusion of process gas supplied through the pressurizing unit (60). The process gas supplied from the pressurizing unit (60) may be diffused in the first diffusion space (611).

[0055] A through hole (612) is formed on one side of the plasma generating body (610) to connect the first diffusion space (611) and the process material supply unit (700). The through hole (612) can allow the process gas diffused from the first diffusion space (611) to pass through. The process gas can pass through the through hole (612) and be supplied to the process material supply unit (700).

[0056] In the present invention, the local plasma generator (600) can convert a process gas or a first process material into a plasma using a hollow cathode plasma (HCP) method. The process gas moving from the first diffusion space (611) toward the process material supply unit (700) can be converted into a plasma state in the through hole (612) by RF power supplied to the local plasma generator (600). As described below, when RF power is supplied from the first local power supply unit (810) to the local plasma generator (600), an electric field can be formed in the through hole (612). The process gas passing through the through hole (612) can be converted into a plasma state by the electric field formed inside the through hole (612).

[0057] A local plasma generator (600) may be positioned above a process material supply unit (700). The local plasma generator (600) may supply process gas injected into the process chamber (100) to the process material supply unit (700), or convert a first process material injected into the process chamber (100) into a plasma state and supply it to the process material supply unit (700). Plasma conversion by the local plasma generator (600) may be performed optionally. When RF power is not supplied to the local plasma generator (600), the local plasma generator (600) supplies process gas or the first process material to the process material supply unit (700), and when RF power is supplied to the local plasma generator (600), the local plasma generator (600) may supply a second process material generated by converting the first process material into a plasma state to the process material supply unit (700).

[0058] The process material supply unit (700) is positioned below the local plasma generation unit (600) and performs the function of supplying the process gas or second process material supplied from the local plasma generation unit (600) to the substrate (W). The process material supply unit (700) can ensure that the process gas or second process material is supplied with a uniform distribution over the entire surface area of ​​the substrate (W).

[0059] When a source gas and a reaction gas are supplied to a substrate (W), the source gas and the reaction gas react to form a thin film on the substrate (W). Alternatively, when a second process material for the source gas and the reaction gas is supplied to the substrate (W), different second process materials react to form a thin film on the substrate (W). A first process material generated by a remote plasma generator (10) may be further plasma-converted by a local plasma generator (600) to generate a second process material. Since the second process material generated by continuous plasma conversion is used to perform the thin film deposition process, the production volume of the second process material increases, and the step coverage efficiency of the thin film can be improved.

[0060] The process material supply unit (700) may include a second diffusion space (710) and a supply hole (720). The second diffusion space (710) may be provided for the diffusion of the process gas or the second process material. The process gas or the second process material supplied from the local plasma generation unit (600) may be diffused in the second diffusion space (710).

[0061] The supply hole (720) can connect the second diffusion space (710) and the process processing space (SP1). The supply hole (720) can be formed toward the substrate (W). The process gas or second process material diffused in the second diffusion space (710) can pass through the supply hole (720) and be supplied to the substrate (W).

[0062] The first local power supply unit (810) can supply RF power to the local plasma generation unit (600). When RF power is supplied to the local plasma generation unit (600), an electric field is formed in the through hole (612), and the first process material passing through the through hole (612) can be converted into a plasma state. The second process material generated in the local plasma generation unit (600) can be supplied to the substrate (W) from the process material supply unit (700) and used for the deposition of a thin film.

[0063] The second local power supply unit (820) can supply RF power to the process material supply unit (700). The process material supply unit (700) can generate a third process material by converting the process gas or the second process material into plasma using a capacitively coupled plasma (CCP) method. The process material supply unit (700) may be equipped with a separate electrode plate (not shown) that receives RF power, or it may perform the role of an electrode that receives RF power itself. As described above, the substrate support unit (200) may include a heater that performs the role of an electrode. When RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater of the substrate support unit (200). A process gas or a second process material introduced into the process chamber (100) by an electric field formed by the supply of RF power is converted into a plasma state to generate a third process material, and the third process material reacts with the surface of the substrate (W) to perform process treatment on the substrate (W).

[0064] The second local power supply unit (820) can supply RF power to the process material supply unit (700) to convert the process gas or second process material into a plasma state for depositing a thin film on the substrate (W). The process gas or second process material injected into the process processing space (SP1) is converted into a plasma state by the electric field formed between the process material supply unit (700) and the substrate support unit (200), and the third process material generated by such conversion can be used for depositing a thin film on the substrate (W).

[0065] A gas port (150) may be provided in the process chamber (100). The gas port (150) may be placed on the inner lower surface of the chamber body (110). For example, the gas port (150) may be placed in an area that overlaps vertically with the substrate support (200) to effectively discharge process by-products. Meanwhile, the gas port (150) being on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the gas port (150) may be placed on the inner side of the chamber body (110). For example, when the substrate support (200) rises into the process processing space (SP1), the gas port (150) may be placed in the area between the substrate support (200) and the process material supply unit (700). Hereinafter, the description will focus on the gas port (150) being placed on the inner lower surface of the chamber body (110).

[0066] The gas port (150) may provide a discharge path for process by-products. Here, the process by-products may include all materials that must be discharged from the process chamber (100), such as the process gas remaining in the process chamber (100), the first process material, the second process material, and the remaining gas that is not used for the formation of the thin film among the third process material. For example, the process by-products may include a source gas, a reaction gas, a source purge gas, and a reaction purge gas, and may include a process material for the source gas or the reaction gas.

[0067] An exhaust line (160) may be connected to the gas port (150). The exhaust line (160) may provide a transport path for process by-products introduced through the gas port (150). The exhaust line (160) may be equipped with a pressure pump (170). The pressure pump (170) may pressurize the internal space of the exhaust line (160) to allow process by-products introduced through the gas port (150) to be transported through the exhaust line (160). The process by-products transported through the exhaust line (160) can be discharged from the process chamber (100).

[0068] A local control unit (900) is provided in the process device (20) and can perform overall control over the process device (20). For example, the local control unit (900) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the local control unit (900) can control the thin film deposition on the substrate (W). For example, the local control unit (900) can control the supply of RF power by the first local power supply unit (810) and the second local power supply unit (820). The local control unit (900) can control the first local power supply unit (810) and the second local power supply unit (820) individually. For example, the local control unit (900) can individually select and apply the power amount and power supply time of the first local power supply unit (810) and the power amount and power supply time of the second local power supply unit (820).

[0069] Additionally, the local control unit (900) can enable a cleaning process for the process chamber (100) to be performed after the thin film deposition process for the substrate (W) is performed.

[0070] In the present invention, the thin film deposition process for a substrate (W) may include a process of depositing a thin film of silicon (Si) component onto the substrate (W). Here, the thin film may be an oxide film or a nitride film. Silicon dioxide (SiO2) or silicon nitride (SiN) may be used for the deposition of the oxide film or the nitride film. Meanwhile, the oxide film or the nitride film may be formed not only on the substrate (W) but also on the inner wall of the process chamber (100). Hereinafter, the oxide film or the nitride film formed on the inner wall of the process chamber (100) is referred to as the deposited material.

[0071] If the accumulated thickness of the deposit (800) formed on the inner wall of the process chamber (100) exceeds a certain length, a change in process time may occur, and the quality of the thin film deposited on the substrate (W) may deteriorate. Additionally, if the deposit accumulates at the connection part between the pressurizing part (60) and the local plasma generation part (600), the supply of the first process material may not be performed smoothly, and if the deposit accumulates in the through hole (612) of the local plasma generation part (600), the generation and supply of the second process material may not be performed smoothly.

[0072] The local control unit (900) can perform a cleaning process for the process device (20) after the thin film deposition process on the substrate (W) is performed, thereby removing the deposit (800) formed on the inner wall of the process chamber (100) and the local plasma generation unit (600). As the deposit (800) is removed, the deterioration of the thin film quality due to the subsequent thin film deposition process can be prevented.

[0073] The cleaning process may include a first cleaning process and a second cleaning process. The first cleaning process includes a process for removing a deposit formed on the inner wall of the process device (20), and the second cleaning process may include a process for removing a deposit formed on the local plasma generator (600).

[0074] The first cleaning process can be performed by injecting a cleaning gas into the interior of the process device (20). The cleaning gas may include a gas containing fluorine (F). For example, the cleaning gas may be nitrogen trifluoride (NF3), sulfur hexafluoride (SF6), or chlorine trifluoride (ClF3).

[0075] The first cleaning process includes a process of converting cleaning gas sprayed into a process device (20) into a plasma state by supplying RF power, and the second cleaning process may include a process of converting cleaning gas remaining in a local plasma generator (600) into a plasma state by supplying RF power. As the cleaning gas converted into a plasma state is used, the cleaning efficiency may be improved.

[0076] A detailed description of the first cleaning process and the second cleaning process will be provided later through FIGS. 10 to 15.

[0077] FIG. 6 is a diagram showing the supply of a first process material to a process device, FIG. 7 is a diagram showing the supply of a process gas to a process device, and FIG. 8 is a diagram showing the supply of a first process material and a process gas to a process device.

[0078] Referring to FIG. 6, the remote plasma generator (10) can supply a first process material (PL) to a plurality of process devices (20).

[0079] Each of the multiple process devices (20) can generate a second process material by plasma converting a first process material (PL) and perform a thin film deposition process on a substrate (W) using the second process material. The second process material generated by continuous plasma conversion can be used to perform a thin film deposition process on the substrate (W). Since the thin film deposition process is performed simultaneously by the multiple process devices (20), the production volume of the substrate (W) with the thin film deposited can be improved.

[0080] Referring to FIG. 7, the remote plasma generator (10) can supply process gas (PG) to a plurality of process devices (20).

[0081] Each of the plurality of process devices (20) can generate a process material by converting a process gas (PG) into plasma and perform a thin film deposition process on a substrate (W) using the said process material. When continuous plasma conversion is not required, the process material generated individually in the process device (20) can be used to perform a thin film deposition process on the substrate (W).

[0082] Referring to FIG. 8, the remote plasma generator (10) can supply process gas (PG) and a first process material (PL) to a plurality of process devices (20).

[0083] The distribution unit (30) of the remote plasma generation unit (10) can selectively distribute the process gas (PG) supplied to the remote plasma generation unit (10) and the first process material (PL) generated from the remote plasma generation unit (10) to a plurality of plasma transfer lines (40). For example, the distribution unit (30) can distribute the process gas (PG) and the first process material (PL) so that the process gas (PG) is supplied to some process devices (20) and the first process material (PL) is supplied to other process devices (20). The process gas (PG) and the first process material (PL) distributed by the distribution unit (30) can be transferred through the corresponding plasma transfer lines (40).

[0084] FIG. 9 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0085] Referring to FIG. 9, a substrate processing method according to an embodiment of the present invention comprises a first process material generation step (S1010), a second process material generation step (S1020), a thin film deposition step (S1030), a first cleaning step (S1040), and a second cleaning step (S1050).

[0086] A remote plasma generator (10) can convert a process gas into plasma to generate a first process material in a plasma state (S1010). A local plasma generator (600) can convert the first process material into plasma to generate a second process material in a plasma state (S1020). A process device (20) can perform a thin film deposition process on a substrate (W) using the second process material (S1030).

[0087] The local control unit (900) may allow a first cleaning process and a second cleaning process to be performed after a thin film deposition process on the substrate (W) is performed (S1040, S1050). The first cleaning process includes a process for removing a deposit formed on the inner wall of the process device (20), and the second cleaning process may include a process for removing a deposit formed on the local plasma generation unit (600).

[0088] FIG. 10 is a flowchart showing the first cleaning process, and FIG. 11 is a diagram for explaining the first cleaning process.

[0089] Referring to FIGS. 10 and 11, the first cleaning process can be performed with the substrate support (200) sequentially positioned at the first position, the second position, and the third position (S1041, S1042, S1043).

[0090] RF power (P2) can be supplied to the process material supply unit (700) for plasma conversion of the cleaning gas (CG) during the first cleaning process. As the cleaning gas (CG) is converted into plasma, the bonding between the silicon (Si) contained in the deposit and the cleaning gas (CG) is performed more smoothly, and the time of the first cleaning process can be shortened.

[0091] An electric field for plasma conversion can be formed between the process material supply unit (700) and the substrate support unit (200). The strength of the electric field may vary depending on the distance between the process material supply unit (700) and the substrate support unit (200). When the substrate support unit (200) is positioned at a first position, plasma conversion is performed by a relatively high electric field, thereby improving the efficiency of the first cleaning process. Meanwhile, since the electric field is formed between the process material supply unit (700) and the substrate support unit (200), plasma conversion for the cleaning gas (CG) present in the space outside the space between the process material supply unit (700) and the substrate support unit (200) may not be easily performed. Accordingly, the first cleaning process can be performed by changing the position of the substrate support unit (200) from a first position to a third position in order to clean the deposit distributed over the entire area of ​​the process chamber (100). For example, a first cleaning process may be performed with the substrate support (200) positioned in a first position (S1041), then a first cleaning process may be performed with the substrate support (200) positioned in a second position (S1042), and then a first cleaning process may be performed with the substrate support (200) positioned in a third position (S1043).

[0092] The process time of the first cleaning process performed when the substrate support (200) is positioned in the first position is 120 to 230 seconds, the process pressure is 2.2 to 3.5 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 43 to 50 mm. The process time of the first cleaning process performed when the substrate support (200) is positioned in the second position is 80 to 150 seconds, the process pressure is 1.8 to 2.3 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 62 to 83 mm. The process time of the first cleaning process performed when the substrate support (200) is positioned in the third position is 80 to 120 seconds, the process pressure is 1.8 to 2.2 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 37 to 107 mm.

[0093] FIG. 12 is a flowchart showing a second cleaning process, FIG. 13 is a diagram showing the second cleaning process being performed with the substrate support positioned at a third position, FIG. 14 is a diagram showing the second cleaning process being performed with the substrate support positioned at a second position, and FIG. 15 is a diagram showing the second cleaning process being performed with the substrate support positioned at a first position.

[0094] The second cleaning process can be performed with the substrate support (200) sequentially positioned at the third position, the second position, and the first position (S1051, S1052, S1053).

[0095] RF power (P1) can be supplied to a local plasma generator (600) for plasma conversion of the cleaning gas (CG) during the second cleaning process. As the cleaning gas (CG) is converted into plasma, the bonding between the silicon (Si) contained in the deposit and the cleaning gas (CG) is performed more smoothly, and the time of the second cleaning process can be shortened.

[0096] An electric field for plasma conversion can be formed inside the through hole (612). A process for removing a deposit formed on the inner wall of the through hole (612) can be performed by the plasma-converted cleaning gas (CG).

[0097] A second cleaning process may be performed after the first cleaning process has been performed. As the first cleaning process proceeds, the cleaning gas (CG) may be converted into plasma. The plasma-converted cleaning gas (CG) may remain inside the process chamber (100) even after the first cleaning process is completed. For the second cleaning process, the substrate support (200) may be sequentially positioned at a third position, a second position, and a first position. That is, the second cleaning process may be performed with the substrate support (200) positioned at the third position (S1051), then the second cleaning process may be performed with the substrate support (200) positioned at the second position (S1052), and then the second cleaning process may be performed with the substrate support (200) positioned at the first position (S1053). Through this, the cleaning gas (CG) remaining in the process chamber (100) moves to the local plasma generation unit (600), and the density of the cleaning gas (CG) contained in the through hole (612) increases. Since a cleaning gas (CG) of higher density is used to perform the second cleaning process, the efficiency of the second cleaning process can be improved.

[0098] Additionally, after the first cleaning process is performed, the substrate support (200) may be positioned at a third location. Since the substrate support (200) is positioned at the third location at the time the second cleaning process begins, the process time of the second cleaning process may be shortened.

[0099] The process time of the second cleaning process performed with the substrate support (200) positioned at the third position is 10 to 20 seconds, the frequency of the RF power (P1) is 27.12 MHz, the magnitude of the RF power (P1) is 300 w, the process pressure is 1.8 to 2.2 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 107 mm. The process time of the second cleaning process performed with the substrate support (200) positioned at the second position is 10 to 20 seconds, the frequency of the RF power (P1) is 27.12 MHz, the magnitude of the RF power (P1) is 200 w, the process pressure is 1.8 to 2.2 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 62 mm. The process time of the second cleaning process performed with the substrate support (200) positioned in the first position is 10 to 20 seconds, the frequency of the RF power (P1) is 27.12 MHz, the magnitude of the RF power (P1) is 100 w, the process pressure is 1.8 to 2.2 Torr, and the gap between the process material supply unit (700) and the substrate support (200) may be 41 mm.

[0100] The above description explains that the process time of the second cleaning process, which is performed with the substrate support (200) positioned in the first position, the second position, or the third position, is 10 to 20 seconds and the frequency of the RF power (P1) is 27.12 MHz. However, according to some embodiments of the present invention, the process time of the second cleaning process may be 20 to 30 seconds and the frequency of the RF power (P1) may be 13.56 MHz. That is, as the process time increases, the frequency of the RF power (P1) may decrease, or as the process time decreases, the frequency of the RF power (P1) may increase.

[0101] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0102] 1: Substrate processing device 10: Remote plasma generator 20: Process device 30: Distribution section 40: Plasma transfer line 50: Auxiliary plasma generator 60: Pressurizing unit 70: Remote power supply unit 80: Remote control unit 100: Process chamber 200: Substrate support 300: Lifting unit 600: Local plasma generator 700: Process material supply unit 810: 1st Local Power Supply Unit 820: 2nd Local Power Supply Unit 900: Local control unit

Claims

Claim 1 A substrate processing device comprising: a remote plasma generator that generates a first process material in a plasma state by converting a process gas into plasma; a local plasma generator that generates a second process material in a plasma state by converting the first process material into plasma; a process device that performs a thin film deposition process on a substrate using the second process material; a substrate support member provided in the process device and supporting the substrate; and a local control member that controls the thin film deposition on the substrate, wherein the remote plasma generator is provided outside the process device and the local plasma generator is provided inside the process device, and the local control member causes a first cleaning process to be performed after the thin film deposition process on the substrate is performed, and the first cleaning process includes a process for removing a deposit formed on the inner wall of the process device, and the substrate support member may be positioned in one of a first position which is an upper space of the process device; a second position which is a central space of the process device; and a third position which is a lower space of the process device, and the first cleaning process is performed with the substrate support member positioned sequentially in the first position, the second position, and the third position. Claim 2 In claim 1, the first cleaning process is performed by injecting a cleaning gas into the interior of the process device in a substrate processing device. Claim 3 In claim 2, the cleaning gas is a substrate processing apparatus comprising a gas containing fluorine (F). Claim 4 A substrate processing apparatus according to claim 1, wherein the local control unit performs a second cleaning process after a thin film deposition process on the substrate is performed, and the second cleaning process is performed with the substrate support unit sequentially positioned at the third position, the second position, and the first position. Claim 5 In claim 4, the substrate processing apparatus comprises a second cleaning process that supplies RF power to convert the cleaning gas remaining in the local plasma generator into a plasma state. Claim 6 A substrate processing apparatus according to claim 1, further comprising: a plasma transfer line providing a transfer path for transferring a first process material from a remote plasma generation unit to a process device; and an auxiliary plasma generation unit provided in the plasma transfer line for plasma conversion of the first process material being transferred through the plasma transfer line. Claim 7 A substrate processing apparatus according to claim 6, further comprising a remote control unit for controlling the auxiliary plasma generator, wherein the remote control unit supplies RF power to the auxiliary plasma generator to convert the cleaning gas remaining in the plasma transfer line into a plasma state. Claim 8 A substrate processing device comprising: a remote plasma generator that generates a first process material in a plasma state by converting a process gas into plasma; a local plasma generator that generates a second process material in a plasma state by converting the first process material into plasma; a process device that performs a thin film deposition process on a substrate using the second process material; a substrate support member provided in the process device and supporting the substrate; and a local control member that controls the thin film deposition on the substrate, wherein the remote plasma generator is provided outside the process device and the local plasma generator is provided inside the process device, and the local control member causes a second cleaning process to be performed after the thin film deposition process on the substrate is performed, and the second cleaning process includes a process for removing a deposit formed in the local plasma generator, and the substrate support member may be positioned in one of a first position which is an upper space of the process device; a second position which is a central space of the process device; and a third position which is a lower space of the process device, and the second cleaning process is performed with the substrate support member sequentially positioned in the third position, the second position, and the first position. Claim 9 A method for processing a substrate, comprising: a step of generating a first process material in a plasma state by converting a process gas into plasma; a step of generating a second process material in a plasma state by converting the first process material into plasma; a step of performing a thin film deposition process on a substrate in a process device using the second process material; and a step of performing a first cleaning process, wherein the first process material is generated outside the process device and the second process material is generated inside the process device, and the first cleaning process includes a process of removing a deposit formed on the inner wall of the process device, and a substrate support member provided in the process device and supporting the substrate may be positioned in one of a first position which is an upper space of the process device; a second position which is a central space of the process device; and a third position which is a lower space of the process device, and the first cleaning process is performed in a state in which the substrate support member is sequentially positioned in the first position, the second position, and the third position. Claim 10 In claim 9, the first cleaning process is a substrate processing method in which a cleaning gas is injected into the interior of the process device. Claim 11 In claim 10, the cleaning gas comprises a gas containing fluorine (F), in a substrate treatment method. Claim 12 A substrate processing method according to claim 9, further comprising a step of performing a second cleaning process, wherein the second cleaning process is performed with the substrate support sequentially positioned at the third position, the second position, and the first position. Claim 13 A substrate processing method according to claim 12, wherein the second cleaning process comprises a process of supplying RF power to a local plasma generator that generates the second process material to convert the cleaning gas remaining in the local plasma generator into a plasma state. Claim 14 A substrate processing method according to claim 9, further comprising: a plasma transfer line providing a transfer path for transferring a first process material from a remote plasma generator that generates the first process material to a process device; and an auxiliary plasma generator provided in the plasma transfer line to convert the first process material being transferred through the plasma transfer line into plasma, wherein RF power is supplied to the auxiliary plasma generator to convert the cleaning gas remaining in the plasma transfer line into a plasma state. Claim 15 A method for processing a substrate, comprising: a step of generating a first process material in a plasma state by converting a process gas into plasma; a step of generating a second process material in a plasma state by converting the first process material into plasma; a step of performing a thin film deposition process on a substrate in a process device using the second process material; and a step of performing a second cleaning process, wherein the first process material is generated outside the process device and the second process material is generated inside the process device, and the second cleaning process includes a process of removing a deposit formed in a local plasma generation part that generates the second process material, and a substrate support member provided in the process device and supporting the substrate may be positioned in one of a first position which is an upper space of the process device; a second position which is a central space of the process device; and a third position which is a lower space of the process device, and the second cleaning process is performed in a state in which the substrate support member is sequentially positioned in the third position, the second position, and the first position.

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