Method and apparatus for mask repair

Abstract

The present invention relates to a method, apparatus, and computer program for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas comprising a second molecule capable of performing inversion oscillation; and (c) providing a particle beam to a working area of ​​an object to generate a deposition material in the working area based at least partially on the first gas and the second gas. The second gas is provided at a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

Description

Technology Field

[0001] This patent application claims priority to German patent application DE 10 2022 202058.8, titled "Method and apparatus for repairing a mask," filed with the German Patent Office on March 1, 2022. The entirety of German patent application DE 10 2022 202058.8 is incorporated by reference into this patent application.

[0002] The present invention relates to a method, apparatus, and computer program for processing an object for lithography. More specifically, the present invention relates to a method for generating a deposition material, a method for passivating a surface material, a corresponding apparatus, a method for lithographic processing of a wafer, and a computer program for performing said method. Background Technology

[0003] In the semiconductor industry, increasingly smaller structures are created on wafers to ensure an increase in integration density. Among the methods used herein for creating structures are lithographic methods for imaging these structures onto a wafer. Lithographic methods may include, for example, photolithography, ultraviolet (UV) lithography, DUV lithography (i.e., lithography in the deep ultraviolet spectral region), EUV lithography (i.e., lithography in the extreme ultraviolet spectral region), X-ray lithography, nanoimprint lithography, etc. Typically, a mask is used herein as a lithographic object (e.g., a photomask, an exposure mask, a reticle, a stamp in the case of nanoimprint lithography, etc.) that includes a pattern to image a desired structure on a wafer.

[0004] As direct density increases, the demands on mask fabrication also increase (for example, as a result of the accompanying reduction in structural dimensions on the mask or the greater material requirements of the lithography). Consequently, the mask fabrication process becomes increasingly complex, time-consuming, and costly, yet mask errors (e.g., defects, material deficiency, deformed material, etc.) cannot always be avoided. Typically, therefore, mask errors are improved or repaired during additional processing operations.

[0005] For example, it is possible to repair mask errors through particle beam-based or particle beam-induced deposition processes. This typically involves electron beam-induced or ion beam-induced deposition of material at local sites near the mask error. Here, it is possible to use a deposition gas as a precursor gas, which is important for defining the composition of the deposited material (i.e., the repair material).

[0006] However, (repaired) masks can be subjected to high physical and chemical stress during lithography and downstream processes (e.g., mask exposure, mask cleaning, etc.). Therefore, the strength, durability, and stability of the repair material against these aggressive influences are critical.

[0007] For example, it is known that additive gases can be added to the deposited gas during mask processing, which can additionally affect the properties of the repair material.

[0008] Additionally, US 2020 / 103751 A1 discloses the deposition of a material using a first particle beam and at least one deposition gas. The deposition gas may include a metal carbonyl, which may include a chromium hexacarbonyl. The deposition gas may typically be used to replace missing parts of pattern elements of a photomask. Additionally, it is possible to add at least one additive gas containing an oxidizing agent to the deposition gas, wherein the oxidizing agent may include, for example, oxygen, water vapor, or nitrogen dioxide. Additionally, the additive gas may include a gas having a reducing effect. The gas having a reducing effect may include hydrogen, ammonia, or methane. Additionally, an EUV mask is disclosed. One possible material for the buffer layer of the EUV mask is chromium nitride. The buffer layer is deposited on a coating layer, and the coating layer protects the multilayer structure of the EUV mask. One possible material for the absorption layer of the EUV mask is chromium. One possible material for the anti-reflective layer of the EUV mask is tantalum oxynitride. In addition, the structure of an absorption pattern element is created and structured to be formed from a buffer layer, an absorption layer, and an anti-reflection layer.

[0009] However, due to the technical complexity of particle beam-based deposition processes, the properties of the repair material are not always optimal.

[0010] Accordingly, the problem addressed by the present invention is to specify a method and apparatus for optimizing the processing of an object for lithography.

[0011] These objectives are achieved at least partially by various embodiments of the present invention.

[0012] A first aspect of the present invention relates to a method for processing an object for lithography. The method comprises the steps of providing a first gas and providing a second gas comprising a second molecule capable of performing inversion oscillation. The method further comprises the step of providing a particle beam to a working area of ​​an object to generate a deposition material in the working area based at least partially on the first gas and the second gas. The second gas may be provided at a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

[0013] The concept of the present invention is, firstly, based on the fact that molecular inversion oscillation can have a significant effect on the generation of deposition materials using a particle beam. Molecules capable of performing inversion oscillation are also referred to herein as inversion molecules. The present invention utilizes the fact that inversion molecules can have an average dipole moment (μ) over a time period of zero. Inversion oscillation causes the integral of the dipole moment (μ) of the inversion molecule to essentially contain zero over a specific time interval (for example, the integral of the dipole moment (μ) may be zero over a time interval containing one or more oscillation periods; or it may mathematically tend toward zero when the selected time interval tends toward infinity). Thus, this mechanism can result in the inversion molecule having reduced dipole characteristics compared to molecules that cannot perform inversion oscillation. It has been recognized here that the reduced dipole characteristics of such inversion molecules can have a significant effect on the interaction between the inversion molecule and the material surface. In the generation of deposition material, complex interactions may occur between the first gas, the second gas, and the particle beam, wherein the deposition material is generated on the material surface within the working area of ​​the object for lithography. For example, the generation of deposition material may involve particle beam-induced deposition (e.g., via a beam of non-zero mass particles). Therefore, for the generation of deposition material, properties including the characteristics of the gas within the working area and in the object environment are very important. These (local) characteristics of the gas may include the (local) gas concentration of the gas within the working area or in the object environment. The (local) gas concentration may include, for example, the concentration of the first gas, the second gas, and / or gas reaction products in the generation of deposition material. Additionally, the (local) gas concentration may include the concentration of various molecules (e.g., the concentration of the second molecule, the concentration of additional molecules contained in the first gas, the second gas, and / or reaction products).Additionally, the (local) gas concentration described herein may include any gas parameters (e.g., gas pressure, gas flow rate, etc.) associated with the first gas, the second gas and / or gas reaction product.

[0014] In the formation of sedimentary materials, a defined (local) gas concentration is typically required over a specific period to ensure that the reaction for the formation of the sedimentary material proceeds in a controlled manner, which enables the establishment of defined physical and / or chemical properties of the sedimentary material. Therefore, controlling the defined (local) gas concentration can be helpful. The defined (local) gas concentration can be of a static or dynamic type. Here, static (local) gas concentration is understood as essentially meaning that a constant (local) gas concentration can exist or must be established (e.g., a constant ratio of the concentrations of a first gas, a second gas, and / or reaction products). Here, dynamic (local) gas concentration is understood as meaning that the dynamic process of (local) gas concentration must be carried out in a controlled manner (e.g., controlled external transport of reaction products, controlled switching between two static (local) gas concentrations, alternating (local) gas concentrations, etc.).

[0015] However, due to chemical and / or physical interactions in the formation of sedimentary material, the specified (local) gas concentration may vary to a technically undesirable degree. For example, this may include (local) depletion of a second gas (and / or first gas) within the working area, thereby affecting the process of forming sedimentary material in an undesirable way.

[0016] Here, the inventors have recognized that the use of inversion molecules capable of having reduced dipole properties as described herein can be highly advantageous in the case of particle beam-based generation of deposition materials. This is because the reduced dipole properties of the inversion molecules can affect the probability of absorption of the inversion molecules by the material within the working region. As a result of the reduced dipole properties, for example, the probability of absorption of a second molecule of a second gas (i.e., the inversion molecule) can be taken to a favorable degree relative to the material within the working region. Such a favorable probability of absorption cannot be achieved, for example, by molecules that cannot perform inversion oscillation. These molecules that cannot perform inversion oscillation are referred to herein as non-inversion molecules. Non-inversion molecules may have, for example, a non-zero permanent dipole moment. Additionally, non-inversion molecules may include polar molecules (e.g., NO, NO2, H2O) having, for example, a non-zero dipole moment. In particular, inversion molecules may have a lower probability of absorption by the material (within the working area) than non-inversion molecules due to their reduced dipole properties. Therefore, inversion molecules may not be absorbed as well by the material (within the working area) as non-inversion molecules. Consequently, when using inversion molecules in the second gas, it is possible to minimize the depletion of the second gas near the working area. Thus, the concentration of the second gas can be increased or maintained for a longer period within the working area than, for example, in the case of (exclusive) use of non-inversion molecules in the second gas. Consequently, technical adjustment of the second gas concentration or consideration of a decrease in the second gas concentration due to a high probability of absorption can be significantly minimized.

[0017] Therefore, the use of an inversion molecule as a second molecule can enable an optimized ratio of the composition of the defined (local) gas concentration in the formation of sedimentary material, and as a result, it is possible to optimize the formation of sedimentary material. In addition, this can optimize the establishment of the defined physical and / or chemical properties of the formed sedimentary material, because they can depend to a critical degree on the (local) gas concentration in the formation of sedimentary material.

[0018] The ability of the second molecule to perform inversion oscillation can be defined as the second molecule being able to perform inversion oscillation at a specific temperature that basically includes a temperature higher than zero Kelvin. For example, this can be defined as the second molecule of the second gas being able to perform inversion oscillation at a temperature that is dominant during the formation of sedimentary material. For example, the specific temperature at which the second molecule is able to perform inversion oscillation may include typical room temperature (e.g., 20°C or 25°C). Additionally, the specific temperature may be within a temperature range between -60°C and 600°C that may be dominant during the formation of sedimentary material, for example.

[0019] Additionally, in a series of tests, the inventors have discovered a favorable parameter space for the gas flow rate of a second gas (containing inversion molecules) for the production of the deposition material. The second gas can be provided at a gas flow rate of less than 5 sccm (where sccm means standard cubic centimeters per minute). Additionally, the second gas can be provided at a gas flow rate preferably less than 2 sccm, more preferably less than 0.5 sccm. In a further example, the second gas can be provided at a gas flow rate of less than 0.3 sccm. Within these ranges, it is possible to deposit a material having specific stability against external influences, for example (e.g., UV, DUV, EUV radiation irradiation under reduced pressure, use in a reactive gas atmosphere, cleaning cycles of EUV or DUV masks, etc.).

[0020] The interaction between the material (within the working area) described herein and the inversion molecules, and the interaction with the gas flow rate specified herein, could result in particularly desirable properties of the resulting deposited material. One property may be, for example, the composition of the material. For example, it is possible to determine the chemical composition of the resulting material by Auger electron spectroscopy and / or X-ray photoelectron spectroscopy (XPS).

[0021] Here, the inventors have recognized that the optimization of the chemical composition of the deposition material can be found within the range mentioned above. An advantageous property may alternatively be the durability of the deposition material. For example, the deposition material may inherently withstand a certain number of cleaning cycles (e.g., of an EUV or DUV mask) (e.g., clear defects repaired by the deposition material cannot essentially be printed after such a number of cleaning cycles), for example, at least 10, at least 50, or at least 100, or even at least 1000 cleaning cycles.

[0022] However, in principle, examples involving the provision of a second gas with different gas flow rates, for example, less than 0.01 sccm or more than 5 sccm, can also be considered. Then, particularly advantageous deposition materials may be produced, for example, alternatively or additionally, through additional embodiments described herein. Correspondingly, a method for depositing chromium nitride or chromium nitride-containing materials may be considered as one embodiment of the present invention, wherein a particle beam and a first gas and a second gas as described herein are used (not limited to a specific gas flow rate interval). The first gas may be chromium-containing. The second gas may contain a second molecule capable of performing inversion oscillation.

[0023] Regardless, it should be made clear that the expression sccm refers to standard cubic centimeters per minute, which is known to those skilled in the art. It represents a flow rate in volume units per unit time, where the volume unit corresponds to the flow rate under standard conditions (temperature T=0℃, pressure p=1013.25 hPa). Standard densities known to those skilled in the art can be used to calculate the mass flow rate required for a specific gas flow rate at different pressures or temperatures (e.g., in kg per minute). For example, the standard density of air is, for example, about 1.29 mg / cm³, and the standard density of NH3 is, for example, about 0.77 mg / cm³.

[0024] The above method may further include the local delivery of a first gas and / or a second gas in the working area of ​​the object. Thus, the first gas and / or the second gas may be sent locally onto the working area (e.g., through a gas conduit, nozzle, etc.) for the generation of deposition material. The above method may further include the local generation of deposition material within the working area of ​​the object for lithography such that the generation is essentially confined to the working area. The above method may also include the use of a local particle beam, e.g., a focused particle beam, in which case the generation comprises local generation essentially confined to the area of ​​the local particle beam.

[0025] An object for lithography as described herein may include a lithography mask. The lithography mask may be designed to be used in lithography for the manufacture of semiconductor-based chips (e.g., during the exposure of a semiconductor-based wafer). The lithography mask may also include any type of lithography mask capable of imaging an image based on a source of electromagnetic radiation (of any wavelength) and a pattern contained therein. The image may include variations of the pattern. The lithography mask may include, for example, an EUV mask, a DUV mask, an X-ray lithography mask, a binary mask, a phase-shifting mask, etc. Additionally, the lithography mask may also include a nanoimprint lithography stamp or a lithography mask capable of imaging a pattern based on a particle source.

[0026] The work area specified herein may include a local area of ​​the object for lithography. However, it is also conceivable that the work area includes the entire object for lithography. The work area may also include any areal dimensions, shapes, and / or geometric structures. For example, the work area may be within a size order related to the (critical) dimension of the object. For example, the (critical) dimension may include a specific dimension CD of a pattern element of the object. The work area may cover, for example, an area A arising from the specific dimension CD (for example, A may be proportional to the specific dimension CD, e.g., A=CD 2 (is). Additionally, the material may be generated within the work area such that the generated material does not necessarily have to cover the entire work area, but is generated only within a sub-area of ​​the work area. Alternatively, the material may be generated within the work area such that the generated material covers the entire work area.

[0027] In one example, the method comprises the step of providing a second gas at a gas flow rate of less than 0.01 sccm, preferably less than 0.05 sccm, more preferably less than 0.1 sccm. These minimum amounts allow for particularly advantageous stability of the deposited material.

[0028] Additionally, the method may include the step of providing a second gas at a gas flow rate between 0.1 sccm and 0.5 sccm, more preferably between 0.2 sccm and 0.3 sccm, and most preferably between 0.24 sccm and 0.26 sccm. It has been found that particularly advantageous stability of the deposited material can be achieved within these ranges.

[0029] In one example, the method may include the step of providing a particle beam with a particle beam residence time of at least 0.1 μs, preferably at least 0.3 μs, and most preferably at least 0.5 μs. In one example, the method includes the step of providing a particle beam with a particle beam residence time of at least 1 μs, preferably at least 3 μs, and most preferably at least 5 μs. In a further example, the process includes the step of providing a particle beam with a particle beam residence time of 0.1 μs to 10 μs, preferably 0.3 μs to 7 μs, and most preferably 0.4 μs to 6 μs. A number of cycles are performed with this residence time to deposit material to a desired height.

[0030] In one example, the method comprises the step of providing a first gas and / or a second gas in such a manner that the deposition material is formed at least partially in the gas phase without the influence of the particle beam. The use of inversion molecules in the second gas according to the present invention can ensure a higher concentration of the second gas in the environment of the work area of ​​the object compared to the use of non-inversion molecules (as described herein). Thus, this state can enable a reaction between the first gas and the second gas without the influence of the particle beam. Thus, it is possible to significantly increase the probability that deposition material will form on the surface of the work material even in the gas phase. This can, for example, cause favorable boundary conditions for the reaction during the particle beam-induced generation of deposition material. Thus, upon activation of the particle beam, it is possible for the generation of deposition material in the form of deposition within the work area to occur in a preferred manner to make it more efficient. The described state may also be facilitated by controlled adjustment of gas parameters of the first gas and / or the second gas (e.g., through the corresponding gas flow rate, gas concentration, gas pressure, etc. of the first gas and / or the second gas).

[0031] In one example, the method comprises the step of providing a second gas so that the reaction product of the material generation is displaced from the work area. This can be made possible, for example, by using an inversion molecule as the second molecule. As described herein, a high concentration of the second gas in the environment of the work area of ​​the object can be ensured compared to the use of a non-inversion molecule. A generated large supply of the second molecule in the gas phase can increase the probability of the reaction product being displaced from the surface of the work area.

[0032] In one example, the first gas can be considered as the main sedimentation gas for the generation of sedimentary material. Here, the first gas can be designed to have a substantial effect on the metal content within the generated sedimentary material. In one example, the first gas of the method comprises a first molecule containing metal atoms. Thus, in this example, the first gas (as the main sedimentation gas) can influence the process of generating the sedimentary material in a manner that determines whether the sedimentary material contains a specific metal. Additionally, the first gas (as the main sedimentation gas) can determine whether the sedimentary material contains a specific complex metal.

[0033] The second gas described herein may be considered as an additive gas in this context in relation to the main sedimentary gas (i.e., the first gas). The second gas as an additive gas can further adapt the chemical composition and physical properties (e.g., its stoichiometry, hardness, chemical stability, etc.) of the sedimentary material. For example, the use of the second gas as an additive gas can cause the components of the second gas to be incorporated into the sedimentary material. Additionally, the use of the second gas can reduce the molar ratio within the sedimentary material (compared to the exclusive use of the first gas to produce the sedimentary material using a particle beam). Here, the inventors have recognized that, by means of the connection described herein, an additive gas containing inversion molecules is particularly advantageous over an additive gas containing non-inversion molecules.

[0034] In one example, the method comprises the step of providing a first gas and a second gas at least partially simultaneously. For example, the first gas and the second gas may be introduced simultaneously into the environment of a work area or into the environment of an object, for example, during the creation of sedimentary material. This may also include the (at least partial) presence of a first gas flow rate of the first gas and a second gas flow rate of the second gas during creation, thus ensuring the presence of both gases in the environment of the work area / object. Here, for example, the first gas flow rate and the second gas flow rate may be essentially the same. In other examples, alternatively, they may be different. The simultaneous provision of the first gas and the second gas may also include a change in the first gas flow rate and the second gas flow rate (in the creation of sedimentary material).

[0035] In one example, the method comprises the step of providing a first gas and a second gas at least partially at a time interval. For example, only one of the two gases to be provided or introduced into the environment of the work area / object during the creation process step may be required for the creation of the deposition material. For example, only the first gas (or the second gas) to be initially introduced into the environment of the work area / object may be required for the initiation of the creation of the deposition material. Subsequently, the second gas (or the first gas) may be supplied or provided later. Additionally, it is conceivable that there is a stepwise alternation between the (exclusive) provision / introduction of the first gas (without the second gas) and the (exclusive) provision / introduction of the second gas (without the first gas) during creation. Additionally, it is possible for the termination of the process of creating the deposition material to include the exclusive provision / introduction of one of the two gases. For example, it is conceivable that the termination of the creation process is defined by the exclusive provision / introduction of the second gas.

[0036] In additional examples, the first gas of the method comprises a first molecule comprising a carbonyl compound. This can also be interpreted as the first molecule of the first gas having a carbonyl group. For example, the first molecule may comprise a carbon monoxide ligand.

[0037] In one example, the first molecule of the method comprises a metal carbonyl. For example, the metal carbonyl may comprise a complex of a metal and carbon monoxide as a ligand. In principle, the metal carbonyl may comprise any charge of the complex, any number and type of central atoms, any number and type of ligands, and their binding modes. For example, the metal carbonyl may comprise an uncharged complex, a positively charged metal carbonyl cation, and / or a negatively charged metal carbonylate anion. The formation of the deposited material may produce carbon monoxide molecules (i.e., CO molecules) as a reaction product. In a further example, the first molecule of the method comprises an organometallic compound.

[0038] In one example, the metal carbonyl includes a chromium carbonyl. For example, the chromium carbonyl may include a chromium hexacarbonyl (Cr(CO)6).

[0039] In one example, the resulting sedimentary material contains chromium nitride. It has been found that this enables the achievement of excellent durability of the sedimentary material. In additional examples, the resulting sedimentary material contains metal nitrides and / or metal oxynitrides.

[0040] In one example, the chromium nitride (or sedimentary material) of the method comprises at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, and more preferably at least 20 atomic percent nitrogen. The unit “atomic percent” may be related to the molar ratio of the chromium nitride (or sedimentary material), where the atomic percent represents the number of particles (e.g., nitrogen atoms) relative to the total number of particles of the material (e.g., the total number of atoms in the chromium nitride, or the total number of atoms in the sedimentary material). The atomic percent may be detected, for example, by Auger electron spectroscopy and / or X-ray photoelectron spectroscopy (and also, for example, by photoelectron spectroscopy (PES)).

[0041] In one example, the method comprises the step of generating a deposition material in such a way that the defect of the object is improved. For example, this may first include the step of localizing the defect (e.g., via a scanning electron microscope, an optical microscope, etc.). Here, the work area used for generating the deposition material may be defined based on at least one characteristic of the local defect (e.g., based on the location, shape, size, type, etc. of the defect). The step of improving the defect of the object may further include the step of generating a repair shape surrounding the defect; in one example, the repair shape may function as a work area for the method described herein. The repair shape may have a pixel pattern capable of enabling, for example, the localization of the defect site. Since the pixel pattern may be designed to follow, for example, the contour of the defect, all pixels within the pixel pattern essentially correspond to a site within the defect and thus constitute the defect pixel. In another example, the pixel pattern has a fixed geometric shape (e.g., a polygon, a rectangle, a circle, etc.) that completely surrounds the defect, in which case not all pixels necessarily constitute the defect site. Here, the pixel pattern may include defective pixels corresponding to defect sites and non-defective pixels corresponding to sites that do not cover part of the defect. In one example, the method comprises the step of sending a particle beam onto a defective pixel of at least a repair-shaped pixel pattern in the generation of material. Additionally, the particle beam may be configured to be sent onto any defective pixel in the generation of deposited material. This allows the generation of deposited material to be locally restricted to the defective pixel so that only the defect is processed.

[0042] In one example, the defect of the method comprises a clear defect. Here, a clear defect is a defect site on an object for lithography that is actually supposed to be opaque according to the design of the object (e.g., opaque or strongly absorbing radiation of a specific wavelength). In particular, opacity may be defined in relation to the lithography method for the object. For example, the object for lithography may include an EUV mask for an EUV lithography method, in which case "opaque" may refer to a radiation wavelength of 13.5 nanometers. It may also be conceivable that "opaque" relates to a DUV lithography method (e.g., radiation wavelengths of 193 nanometers or 248 nanometers), an i-line lithography method (e.g., radiation wavelength of 265 nanometers), or any other lithography method depending on the object. Additionally, the clear defect may include a defect site where material is missing from an opaque pattern element of the lithographic mask, for example. Here, the method may include the step of generating a deposition material so that the defect site becomes opaque. For example, this may include the step of generating an absorbent material as a deposition material by the method specified herein. Here, the absorbent material may be designed to be opaque to wavelengths at which the pattern element also becomes opaque. The generated absorbent material may include a material composition having properties (e.g., refractive index n, absorption coefficient k) corresponding to, for example, the material of the layer of the pattern element or optically similar to the material of the layer of the pattern element. In one example, the absorbent material is deposited by the method specified herein, which comprises a substantial portion of chromium nitride or essentially comprises chromium nitride, in order to improve clear defects. Additionally, the method according to the present invention may include the step of generating a material of any layer of the pattern element by the method specified herein.

[0043] A second aspect of the present invention relates to a method for treating a surface material of an object for lithography, comprising the step of providing a second gas comprising a second molecule capable of performing inversion oscillation. The method of the second aspect further comprises the step of providing a particle beam to a working area of ​​the object to passivate the surface material within the working area based at least partially on the second gas. Accordingly, the method of the second aspect may include particle beam-assisted or particle beam-induced passivation based at least partially on the second gas. The surface material may comprise any material contained in the object for lithography. For example, the surface material may be the material of any structure and / or layer of a lithographic mask. For example, the surface material may also be present on the object.

[0044] Features described in the first embodiment of this application may also be included by the second embodiment. In particular, the second gas may be that described herein in connection with the first embodiment. Likewise, features described herein in connection with the second embodiment may also be included by the first embodiment. Furthermore, the first embodiment may include the second embodiment, and the second embodiment may likewise include the first embodiment.

[0045] Passivation of the surface material can be designed so that only local sites of the surface material on which the particle beam acts are passivated in the method of the second embodiment. For example, since the particle beam can be sent onto local sites of the surface material (e.g., through controlled deflection and / or focusing of the particle beam), the local sites are passivated in combination with the provided second gas. The range of the passivated local sites may correspond, for example, to the range of the particle beam on the surface; for example, passivation may be performed within a site having a diameter proportional to the diameter of the particle beam (e.g., FWHM) on the surface (e.g., 5 to 0.2 times or 2 to 0.5 times the diameter of the particle beam). Thus, passivation of the surface material can be localized to any degree of freedom by the positioning of the particle beam. Thus, the surface material can be passivated locally (i.e., geometrically bounded) in a controlled manner. For example, in the context of the method of the second embodiment, a particle beam can be scanned along the surface material (or its surface) in a specific pattern, and as a result, the surface material is passivated along this pattern. This contrasts with conventional global pure gas-based passivation, where the material (e.g., the material of an object for lithography) can be passivated alone over a wide area (e.g., in the case of conventional pure gas-based passivation, the entire surface exposed to the gas is passivated). Thus, the method according to the present invention enables a high degree of configuration of the geometry of the passivated or passivated sites, and the controlled exclusion of sites that should not be passivated (for example, because only the sites scanned by the particle beam can be passivated through the method).

[0046] In one example, the passivation of the second embodiment comprises passivation of the lateral surface of the surface material. The lateral surface may include, for example, local sites / faces such as edges, corners, heights, depressions, etc. of the surface material. Thus, the method according to the present invention can enable passivation of lateral sites on the material of a lithographic object that are typically difficult to access. Here, it is possible for a particle beam to be aligned at an oblique angle on the surface material. Furthermore, it is conceivable that the object (and thus the surface material) be positioned / tilted at an oblique angle in the passivation of the lateral surface, and a combination of the tilting of the object and the lateral alignment of the particle beam. In a further example, the surface material of the present invention comprises the material of the lateral surface of the object.

[0047] Passivation of the surface material can be designed so that the surface material becomes more physically and / or chemically stable against external influences than when passivation according to the present invention is not performed. Passivation can be optimized, in particular, against external influences to which the object is exposed during the lithography process (e.g., electromagnetic radiation, purge gases, cleaning chemicals, immersion media, etc.). In particular, passivation can occur in an advantageous manner because the second molecule used is an inversion molecule that promotes the formation of a defined (local) gas concentration of the second gas within the working area (as described herein). Additionally, passivation can serve to passivate reactive sites of a structured lithography mask (e.g., edges, previously damaged structures, thresholds, easily damaged structures, etc.) that may be attacked, particularly (preferably), by the process gas. Passivation can be preventive, in particular, to prevent any possible damage in advance.

[0048] In one example, in the method of the second embodiment, passivation assists the etching process. For example, the surface material may be passivated during the etching process or in the course of the etching process (e.g., in the case of local etching near the surface material) (as described herein). The etching process may include, for example, the etching of a chromium-containing and / or chromium oxide-containing absorbent material. The etching gases used may be, for example, XeF2 and H2O. The edge formed during the etching process may be considered as the surface material (or the lateral surface of the surface material) described herein. Thus, in the present invention, the edge described herein may be passivated through the method of the second embodiment. This may be performed, for example, after the etching process for the basic (e.g., final) passivation of the surface material is finished. It may also be conceivable that passivation is performed to adjust the process speed of the etching process. Here, passivation can be performed at least partially during the etching process.

[0049] In one example, the method of the second embodiment further comprises the step of generating a surface material in a work area based at least partially on the provision of a first gas and a particle beam prior to passivation of the surface material. The first gas of the second embodiment may correspond to one of the examples specified herein for the first gas of the first embodiment of the present invention. The method of the second embodiment may further comprise controlled (e.g., particle beam-induced) deposition of the surface material, which may subsequently be passivated according to the present invention. For example, passivation may be performed immediately after generation of the surface material, in which case it is conceivable that generation of the surface material and passivation may be performed separately (e.g., as separate processing operations).

[0050] In additional examples, the surface material may be produced by one of the methods of the first embodiment described herein. In this case, the surface material of the second embodiment may be similar to or corresponding to the deposition material produced in the first embodiment.

[0051] In additional examples, the formation of the surface material may also be based at least partially on an added gas. The added gas may be provided as an additive gas together with the first gas in the formation of the surface material. For example, the added gas may include an oxidizing agent, a halide, and / or a gas having a reducing effect. The oxidizing agent may include an oxygen-containing gas. For example, the oxidizing agent may include at least one of oxygen (O2), ozone (O3), water (H2O), hydrogen peroxide (H2O2), dinitrogen monoxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3). The halide may include a halogen-containing gas. For example, the halide may include at least one of Cl2, HCl, XeF2, HF, I2, HI, Br2, HBr, NOCl, PCl3, PCl5, and PF3. Gases having a reducing effect (e.g., reducing agents) may include hydrogen-containing gases. For example, gases having a reducing effect include H2, NH3, and H2N - It may include at least one of NH2 and CH4. In one example, the formation of the surface material comprises providing a first gas comprising chromium hexacarbonyl and providing an added gas comprising nitrogen dioxide as an oxidizing agent. In a further example, the formation of the surface material comprises providing a first gas comprising chromium hexacarbonyl and providing an added gas comprising water and / or oxygen as an oxidizing agent.

[0052] In one example, in the method of the second embodiment, the surface material comprises an absorbent material. As described herein, the absorbent material may be designed to be opaque to wavelength in a lithography method in which an object for lithography may be used.

[0053] In one example, in the method of the second embodiment, passivation comprises creating a passivation layer on a surface material. For example, the creation of the passivation layer may include chemical / physical changes to at least one upper layer of the surface material. Additionally, the creation of the passivation layer may include depositing the passivation layer as an additional layer on the surface material. Furthermore, it is conceivable that a combination of various upper layers of the surface material and a deposited additional layer may be created on the surface material according to the present invention. In one example, in the method of the second embodiment, the created passivation layer comprises a nitride of the surface material.

[0054] In one example, in the method of the second embodiment, the resulting surface material comprises chromium. For example, the resulting surface material may be a chromium oxide-containing or chromium-containing material, and the surface is passivated by the formation of a nitride.

[0055] In one example, in the method of the second embodiment, the generated passivation layer comprises chromium nitride.

[0056] In one example, in the method of the second embodiment, after passivation, an additional surface material is formed on the passivated surface material. The additional surface material may be formed similarly to the surface material (as described herein). Additionally, the method of the second embodiment may include passivation of the additional surface material (as described herein). In a further example, the method of the second embodiment includes the step of alternating the formation of the additional surface material and its passivation. Here, the step of alternating the formation and passivation may be repeated as frequently as desired. For example, this example may result in a layer stack in which the (additional) surface material and its passivation layer exist alternately.

[0057] In one example, in the method of the second embodiment, the chromium nitride contains at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, more preferably at least 20 atomic percent nitrogen.

[0058] In one example, the method of the second embodiment comprises creating a surface material in such a way that defects in the object are improved. For example, this may be carried out similarly to the examples described in the first embodiment. In one example, in the method of the second embodiment, the defects include clear defects.

[0059] In one example, in the method of the first embodiment and / or the second embodiment, the inversion oscillation includes a pyramidal inversion of the second molecule.

[0060] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises a triangular-pyramid geometric structure.

[0061] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises nitrogen and hydrogen in a chemical compound. For example, the second molecule may essentially comprise nitrogen and hydrogen. It is also conceivable that the second molecule comprises only nitrogen and hydrogen.

[0062] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises ammonia (NH3). For example, the inversion oscillation of ammonia occurs at a high frequency of about 23 gigahertz (GHz) at typical room temperature. The inventors have recognized that this is advantageous to the method according to the present invention.

[0063] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule is H2N - Includes NH2.

[0064] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises nitrogen and a halogen in a chemical compound. For example, the second molecule may essentially comprise nitrogen and a halogen. It is also conceivable that the second molecule comprises only nitrogen and a halogen.

[0065] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises at least one of the molecules of NF3, NCl3, NI3, and NBr3.

[0066] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises nitrogen, hydrogen, and a halogen in the chemical compound. For example, the second molecule may essentially comprise nitrogen, hydrogen, and a halogen. It is also conceivable that the second molecule comprises only nitrogen, hydrogen, and a halogen.

[0067] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule comprises at least one of the molecules of NH2X (where X contains a halogen); and NHX2 (where X contains a halogen).

[0068] In one example, in the method of the first embodiment and / or the second embodiment, the second molecule has a lower probability of absorption in the working area than the NO2 molecule. A lower probability of absorption can ensure better availability of the second molecule.

[0069] In one example, in the method of the first embodiment and / or the second embodiment, the particle beam comprises an electron beam. For example, the deposition material of the first embodiment and / or the surface material of the second embodiment may be produced through electron beam-induced deposition (e.g., known as (F)EBID—(focused) electron beam-induced deposition).

[0070] However, it is also conceivable that the particle beam includes an ion beam (e.g., gallium ions, etc.). For example, the depositional material of the first embodiment and / or the surface material of the second embodiment may be produced through ion beam-induced deposition (e.g., known as (F)IBID-(focused) ion beam-induced deposition).

[0071] In addition, the use of a multi-particle beam as a particle beam can also be considered.

[0072] In one example, in the method of the first embodiment and / or the second embodiment, an added gas (as an additive gas) is also provided. For example, the second gas may include the added gas (or its molecules). The added gas may include an oxidizing agent, a halide, and / or a gas having a reducing effect (i.e., a reducing agent). The oxidizing agent may include, for example, an oxygen-containing gas. For example, the oxidizing agent may include at least one of oxygen (O2), ozone (O3), water (H2O), hydrogen peroxide (H2O2), dinitrogen monoxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3). The halide may include a halogen-containing gas. For example, the halide may include at least one of Cl2, HCl, XeF2, HF, I2, HI, Br2, HBr, NOCl, PCl3, PCl5, and PF3. Gases having a reducing effect may include hydrogen-containing gases. For example, gases having a reducing effect include H2, NH3, and H2N - It may include at least one of NH2 and CH4.

[0073] In a preferred example, the method of the first embodiment and / or the second embodiment comprises providing a first gas comprising chromium hexacarbonyl, and providing a second gas comprising an inversion molecule (as described herein) as a second molecule and nitrogen dioxide as an oxidizing agent. In a further preferred example, the method of the first embodiment and / or the second embodiment comprises providing a first gas comprising chromium hexacarbonyl, and providing a second gas comprising an inversion molecule (as described herein) as a second molecule and oxygen and / or water as an oxidizing agent. In a further preferred example, the method of the first embodiment and / or the second embodiment comprises providing a first gas comprising chromium hexacarbonyl, and providing a second gas comprising an inversion molecule (as described herein) as a second molecule and H2 as a reducing agent.

[0074] A third aspect of the present invention relates to an apparatus for processing an object for lithography, comprising means for providing a first gas; means for providing a second gas comprising a second molecule capable of performing inversion oscillation; and means for providing a particle beam. The apparatus is also configured to perform a method according to an example of the first aspect and / or second aspect of the present invention provided herein. Additionally, the apparatus may include a computer system.

[0075] In some examples, the device does not necessarily include means for providing a first gas, for example, when intended only for the passivation described herein.

[0076] A fourth aspect of the present invention relates to an object for lithography, wherein the object is processed by the method of the first aspect and / or the second aspect.

[0077] A fifth aspect of the present invention relates to a method for lithographically processing a semiconductor-based wafer. The method of the fifth aspect further comprises the step of lithographically transferring a pattern associated with an object for lithography onto a wafer, wherein the object is processed according to one of the examples of the first aspect and / or second aspect of the present invention provided herein. The lithographic transfer may include a lithography method in which the object is designed (e.g., EUV lithography, DUV lithography, i-line lithography, etc.). For example, the method of the fifth aspect may comprise the step of providing a beam source of electromagnetic radiation (e.g., EUV radiation, DUV radiation, i-line radiation, etc.). This may further comprise the step of providing a developable resist layer on the wafer. The lithographic transfer may be based at least partially on the radiation source and the provision of the developable resist layer. Here, for example, it is possible to image a pattern on the resist layer by radiation from the radiation source (in a modified form).

[0078] The method described herein may be recorded, for example, in the form of a written entry. This may be achieved, for example, by a digital file, in a similar manner (e.g., in paper form), in a user handbook, or as a formula (e.g., recorded in a device and / or computer at a semiconductor plant). It is also conceivable that a written entry protocol be compiled for the execution of one of the methods described herein. The protocol may, for example, enable later verification of the execution of the method and its details (e.g., formulas) (e.g., during the process of defect evaluation, inspection, etc.). The protocol may include a protocol file (i.e., a log file) that may be recorded, for example, in a device and / or computer.

[0079] A sixth aspect of the present invention relates to a computer program comprising instructions that, when executed by a computer system, cause the computer system to execute a method according to one of the examples of the first, second, and / or fourth aspects of the present invention.

[0080] An additional aspect relates to the above-described device having memory containing a computer program. Additionally, the device may have means for executing the computer program. Alternatively, it is possible for the computer program to be stored elsewhere (e.g., in the cloud), and for the device to have means for receiving instructions resulting from executing the program elsewhere. In either case, this may allow the method to be executed in an automated or autonomous manner within the device. Consequently, it is possible to minimize costs and complexity when processing masks, for example, by minimizing intervention by an operator.

[0081] The features (and also examples) of the method described herein may also be applied or applicable to the mentioned device. The features (and also examples) of the device described herein may also likewise be applied or applicable to the methods described herein. Brief explanation of the drawing

[0082] The following detailed description explains the technical background information and working examples of the present invention with reference to the drawings shown below. FIG. 1 provides a schematic illustration of an exemplary repaired top view of a lithographic object from the prior art. Figure 2 provides a schematic illustration of a cross-sectional view of a process for repairing defects in an object for lithography as an example. FIG. 3 shows a schematic diagram of an exemplary method of the present invention. FIG. 4a shows scanning electron microscope images of five test structures, some of which were produced by the method according to the present invention. Figure 4b is a diagram showing the results of Auger electron spectroscopy for five test structures from Figure 4a. FIG. 5 shows a schematic section of an exemplary device according to the present invention. Specific details for implementing the invention

[0083] FIG. 1 provides a schematic illustration of a top view of an exemplary repaired state for a lithography object. The lithography object may include a lithographic mask suitable for any lithography method (e.g., EUV lithography, DUV lithography, i-line lithography, nanoimprint lithography, etc.). In one example, the lithography mask may include an EUV mask, a DUV mask, an i-line lithography mask, and / or a nanoimprinting stamp. Additionally, the lithography object may include a binary mask (e.g., a chrome mask, an OMOG mask), a phase mask (e.g., a chrome-free phase mask, an alternating phase mask (e.g., a rim phase mask), a half-tone phase mask, a triton phase mask, and / or a reticle (e.g., including a pellicle). The lithography mask may be used in a lithography method for manufacturing, for example, a semiconductor chip.

[0084] Lithographic objects may contain (unwanted) defects. For example, defects may occur during the creation of the object. Additionally, defects can be caused by the (lithographic) processing of the object, process deviance during processing, or movement of the object. Since the creation of lithographic objects is typically costly and complex, defects are usually repaired.

[0085] In the working examples described herein, EUV masks are frequently used as examples of objects for lithography for exemplary purposes. However, any object for lithography other than an EUV mask can be conceived (for example, as described herein).

[0086] FIG. 1 may schematically represent two local states D and R of a detail (1000) of an EUV mask during the process of repairing defects in the mask. The detail (1000) represents a part of a pattern element (PE) of the EUV mask. The pattern element (PE) may also be considered as a pattern element of the EUV mask. The pattern element (PE) may be a part of a designed pattern that can be transferred to a wafer, for example, through a lithography method. Local state D represents a clear defect (110) of the pattern element (PE). The clear defect (1010) (as described herein) may be characterized, for example, by a lack of opaque material of the pattern element (PE). With respect to FIG. 1 (state D), the defect-free pattern element (PE) of the detail (1000) should have a square shape, but it is evident that such a target state does not exist as a result of the defect (1010). Accordingly, the repair procedure (RV) typically generates a repair material (1020) near a clear defect (1010) so that the repair state (R) of the pattern element (PE) can be established. For example, it can be seen in FIG. 1 that the target state of the square shape of the pattern element is re-established in state R. The repair material (1020) may include a material having the effect that the site of the (original) defect (1010) has an opacity effect corresponding to the opacity effect of the pattern element. The opacity effect of the pattern element is caused particularly by at least one absorbent material of the pattern element. Accordingly, the repair material (1020) typically includes an absorbent material that is essentially the same as, for example, the absorbent material of the pattern element, or has similar absorption characteristics (e.g., similar material) to the absorbent material of the pattern element. Here, the technical problem is that the locally generated repair material may nevertheless be affected in the same way as the material of the pattern element that is essentially present on the EUV mask.Therefore, locally bounded repair materials can be subjected to high chemical and physical stress.

[0087] During the use of lithography devices or lithography methods, lithography masks may be affected by extreme physical and chemical environmental conditions that can alter the material properties of the mask, for example. This applies particularly to the exposure of EUV masks during UV lithography methods, where absorbent materials, in particular, can be highly exposed to these effects. EUV using high-energy EUV radiation typically takes place in a hydrogen atmosphere. Furthermore, DUV masks, particularly in DUV lithography methods, may be affected by environmental conditions that potentially alter the material.

[0088] Therefore, there may be high demands for repair materials that may include absorbent materials, for example, in relation to stability under lithographic environmental conditions. Typically, electron beam-induced deposition is used to repair defects in missing materials (e.g., in UV, DUV, EUV masks, etc.). This can generate absorbent (e.g., chromium-containing) deposits. Frequently, chromium precursor gases are used in combination with oxidizing additive gases (e.g., NO2, O2, H2O, etc.). The primary purpose of adding oxidizing additive gases is to reduce the carbon content in the deposit, as residual carbon can further lower the stability of the deposit. However, the resulting chromium oxide-containing material (i.e., the repair material) may only partially satisfy the stability requirements against the aggressive ambient conditions prevalent in lithography processes (e.g., UV, DUV, EUV lithography methods). Consequently, damage to the repair material (and mask) cannot always be ruled out.

[0089] Damage to the repair material (and mask) may involve chemical and / or physical changes to the material, which can also have various causes. First, the cause may lie during operations during the lithography method (e.g., exposure operations). For example, this may be due to radiation during exposure (e.g., EUV radiation, DUV radiation, etc.), (process) temperature, reactions with hydrogen and / or other reactive hydrogen species (e.g., free radicals, ions, plasma), and / or purge gases combined with radiation during exposure (e.g., N2, Extreme Clean Dry Air (XCDA)). ® It can be caused by the reaction of the mask with () and noble gases). Secondly, the cause may lie in downstream processes (e.g., mask treatment after the lithography method). This may include, for example, mask cleaning. Here, repair materials (and masks) previously damaged by chemical and / or physical processes during the lithography method may be further damaged by downstream processes.

[0090] FIG. 2 provides, as an example, a schematic illustration of a cross-section of a process for repairing defects in an object for lithography. FIG. 2 also schematically illustrates a section (i.e., an EUV mask or EUV photomask) through a reflective lithography mask (200) in the EUV wavelength range. An exemplary EUV mask (200) may be designed for an exposure wavelength around 13.5 nm. The EUV mask (200) may comprise a substrate (210) made of a material with a low coefficient of thermal expansion, for example, quartz. Other dielectric, glass, or semiconductor materials may also be, for example, ZERODUR ® , ULE ® or CLEARCERAM ®It can be used as a substrate for an EUV mask such as the one shown. The back surface (215) or back surface (215) of the substrate (210) of the EUV mask (200) can serve to hold the substrate (210) during the manufacture of the EUV mask (200) and during its operation in an EUV photolithography device. Preferably, a thin electrically conductive layer (220) for holding the substrate (210) on an electrostatic chuck (ESC) is applied to the back surface (215) of the substrate (210).

[0091] The front surface (225) of the substrate (210) may comprise a deposited multilayer film or a deposited multilayer structure (270) having, for example, 20 to 80 pairs of alternating molybdenum (Mo) (230) and silicon (Si) layers (235), which is also referred to as a MoSi layer. Instead of molybdenum, it is also possible to use a layer composed of other elements having a high mass number, such as cobalt (Co), nickel (Ni), tungsten (W), rhenium (Re), zirconium (Zn), or iridium (Ir), for the MoSi layer. To protect the multilayer structure (270), a silicon dioxide coating layer (240) may be applied, for example, on the top silicon layer (235). For example, other materials such as ruthenium (Ru) may likewise be considered as the coating layer (240).

[0092] A structured pattern element (PE) may exist on a coating layer (240). The pattern element (PE) may include multiple layers. For example, the pattern element (PE) may include a buffer layer (245) on top of the coating layer (240). Additionally, the pattern element (PE) may include an absorption layer (250) on top of the buffer layer (245). Additionally, the pattern element (PE) may include an anti-reflection layer (255) on top of the absorption layer (250). The pattern element (PE) may be designed to be opaque (i.e., not transparent to light or highly absorbing light) to optical radiation used in, for example, EUV lithography (e.g., optical radiation having a wavelength of 13.5 nm). Here, all layers of the pattern element (PE) may be designed to be opaque to such optical radiation. In particular, the absorption layer (250) may have a primary proportion of absorption of (EUV) optical radiation, and the buffer layer (245) and / or anti-reflection layer (255) may also contribute to absorption. By the provided pattern element (PE), the EUV mask (200) accordingly has an absorption region (280) and a reflection region (285).

[0093] Possible materials for the buffer layer (245) may include quartz (SiO2), silicon-oxygen nitride (SiON), Ru, chromium (Cr), chromium oxide and / or chromium nitride (CrN). In particular, chromium nitride may be preferred as a material for the buffer layer (245) in an EUV mask. Possible materials for the absorption layer (250) may include chromium nitride, chromium, chromium oxide, titanium nitride (TiN) and / or tantalum nitride (TaN). In particular, chromium nitride may be preferred as a material for the absorption layer (250) in an EUV mask. The anti-reflection layer may include, for example, tantalum oxynitride (TaON) and / or chromium nitride.

[0094] During the repair process, it may be necessary to replace missing material of the pattern element (PE). Here, it may be necessary to create any material of the layer of the pattern element (PE). For example, the repair operation (RV) may include creating material of the absorption layer (250) schematically illustrated by FIG. 2A. For example, repair of only partially missing absorption layer (250) may be required. Here, the repair material may be created directly on the (partially existing) absorption layer (250). In this case, the boundary layer of the created repair material is defined for the absorption layer (250) (e.g., not for the buffer layer (245) or the substrate). Additionally, the repair operation (RV) may include creating material of the buffer layer (245) schematically illustrated by FIG. 2B. Here, it is conceivable that the repair operation (RV) creates material for the anti-reflection layer (255) and / or material for the coating layer (240). Additionally, a combination of the creation of various materials for various layers of the pattern element (PE) can be conceived (for example, the repair operation (RV) can create the material of the buffer layer (245) and also the absorbing layer (250)). Additionally, it is possible for only the absorbent material having opaque properties corresponding to or similar to the material of the absorbing layer (250) to be created in the repair operation (RV). Correction of missing sections of the buffer material (245) and / or the anti-reflection layer (255) is not necessarily required for the correction of (clear) defects.

[0095] FIG. 3 shows a schematic diagram of an exemplary method (300). The method (300) can be employed to produce missing material of a pattern element (PE). As described herein, this can be utilized, for example, to improve clear defects.

[0096] The method may include the step (310) of providing a first gas. The first gas may include, for example, a chromium-containing gas, preferably chromium hexacarbonyl.

[0097] Additionally, the method (300) may include the step (320) of providing a second gas containing a second molecule capable of performing inversion oscillation. The second gas may include, for example, ammonia, because ammonia can perform inversion oscillation. In particular, the second gas may be provided at a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

[0098] The method (300) further comprises the step (330) of providing a particle beam to a work area to produce a depositional material based at least partially on a first gas and a second gas. In particular, the production may involve electron beam-induced deposition occurring in a gas atmosphere comprising, for example, chrome hexacarbonyl (as the first gas) and ammonia (as the second gas). The method may further comprise the step of producing within a specific parameter space. For example, the parameter space may include producing the second gas at a gas flow rate as described herein. Additionally, additional parameter spaces for the method may be conceived, which may relate, for example, to the first gas, the second gas and / or the particle beam or its parameters. Some parameter spaces of the exemplary method (300) enabled particularly advantageous properties of the produced depositional material. In particular, when a nitrogen-containing second gas is used, the specified parameter space may be advantageous for achieving a high nitride content of the depositional material (compared to deposition using only the first gas). The carbon content in the deposited material may be reduced (compared to deposition using only the first gas).

[0099] FIG. 4a shows a top view of scanning electron microscope images of five test structures, some of which were prepared by the method according to the present invention. Here, the five test structures S1, S2, S3, S4, and S5 are cuboidal structures, and test structures S2, S3, S4, and S5 were generated in different parameter spaces of the method according to the present invention. What is common to all test structures S1-S5 is that chromium hexacarbonyl was provided as the first gas, and the generation of the deposition material is based on electron beam-induced deposition. What is common to test structures S2-S5 is that the method according to the present invention was performed with the provision of ammonia as the second gas. Test structure S1 was generated as a reference structure, and test structure S1 was generated without the provision of the second gas (e.g., ammonia) of the present invention (i.e., only the first gas is present). Process parameters are presented in detail below.

[0100] Test structure S1 was generated by providing only chrome hexacarbonyl and electron beam-induced deposition. A relatively short electron beam residence time of 0.5 μs was selected. Test structure S2 was generated with a gas flow rate of 0.1 sccm of a second gas (ammonia in this example) and the same electron beam residence time. Test structure S3 was generated with a gas flow rate of 0.25 sccm of a second gas and once again the same electron beam residence time. Test structure S4 was generated with a gas flow rate of 0.25 sccm of a second gas and a relatively long electron beam residence time (10 times longer than in the case of S1). Test structure S5 was generated with a gas flow rate of 0.4 sccm of a second gas and the same electron beam residence time as in the case of S1.

[0101] For test structures S2 through S5, electron beam scanning during particle beam-induced deposition was selected so that the height dimensions of test structures S2 through S5 were of the same size (approximately 50 nm). The height dimension of test structure S1 was approximately 130 nm, which can be attributed to the lack of a second gas supply during the creation of reference structure S1. Additionally, in the processing of test structures S1, S2, S3, S4, and S5, pixel patterns were scanned, which geometrically define the test structures. The electron beam was directed at every pixel of the pixel pattern of each test structure at least once. Scanning can be considered as creating partial layers by defining the height of the test structures through repeated scanning. Scanning can be referred to as loops or cycles. Test structures S1, S2, S3, and S5 were each created with a similar number of loops. The number of loops in test structure S4 was clearly smaller due to a high residence time.

[0102] Figure 4b illustrates the results of Auger electron spectroscopy for the five test structures from Figure 4a. Thus, the results of Auger electron spectroscopy (or Auger spectroscopy) can enable a relative comparison of the test results. The vertical coordinates of Figure 4b represent the molar ratios of atomic percentages. The horizontal coordinates of Figure 4b represent the materials evaluated by Auger spectroscopy, and the results for all test structures S1, S2, S3, S4, and S5 are shown as groups for each material. The analyzed materials shown in Figure 4b are carbon (C) and nitrogen (N). Oxygen and chromium were likewise analyzed but are not shown in Figure 4b. As can be seen in Figure 4b, a clearly elevated nitrogen content compared to reference structure S1 is evident when the method according to the present invention is used (i.e., for test structures S2 through S5). The method according to the present invention can achieve a nitrogen content of at least 10 atomic percent, and a significant nitrogen content is not detected in the deposited material within reference structure S1 by conventional methods. This suggests that, compared to conventional methods, chromium nitride is preferentially produced by the method according to the present invention through the use of ammonia. For structures S4 and S5, it was also possible to achieve a nitrogen content exceeding 20 atomic percent. In the case of the exemplary method according to the present invention (using chromium hexacarbonyl and ammonia), Cr(CO)6 + bNH3 → cCr x O y N z The basic chemical reaction of + dCO + eH2O + fCH4 + gCO2 + hN2 is assumed (in the case of subsequent passivation, in contrast, the equation is Cr x O y C z + dNH3→ Cr x O y-a C z-b N c It can be + eH2O + fCO2). The exact reaction may be influenced by the parameter space of the above method.

[0103] Furthermore, when the method according to the present invention is used (i.e., for test structures S2 to S5), a significant minimization of carbon content is evident compared to reference structure S1. Here, by the method according to the present invention, it is possible for the carbon content to be less than 40 atomic percent, preferably less than 30 atomic percent, and more preferably less than 20 atomic percent. Accordingly, the method according to the present invention resulted in a specific reduction in carbon content of 25 percent, preferably 40 percent, and more preferably 60 percent (compared to deposition without the supply of a second gas). An explanation for this may be that ammonia as an inversion molecule produces a favorable effect that can be enhanced by an appropriate parameter space. In the case of electron beam-induced deposition of chromium using chromium hexacarbonyl, CO molecules may remain on the surface. A high supply of NH3 in the gas phase can be ensured, for example, by its characteristics as an inversion molecule, and can increase the probability of CO displacement by NH3 from the surface. This can have the effect of depositing less carbon in the deposited material. These two effects (i.e., preferential formation of chromium nitride within the deposited material or increase in nitrogen content and decrease in carbon content) can enable optimized repair materials in mask repair, which can better withstand the effects specified herein. Additionally, there is a distinct tendency for the nitrogen content to increase as the gas flow rate of the second gas increases. In the case of test structure S5, since the nitrogen content decreases to a relatively insignificant degree at a relatively high gas flow rate of ammonia (0.4 sccm), it can be inferred that the favorable gas flow rate of the second gas is 0.25 sccm.

[0104] As mentioned herein, the analyzed chromium content is not shown in FIG. 4b. The chromium content of test structures S1, S2, S3, S4, and S5 did not show any significant difference or variation and was measured within the range of approximately 15-25 at%. Thus, it is implied that the method according to the present invention does not have a significant effect on the chromium content. Higher chromium content was also detectable by the method according to the present invention (e.g., chromium content of at least 25 at%, at least 30 at%, or at least 35 at%). It is also conceivable that the chromium content of the deposited material is at least 50 at%, at least 70 at%, or at least 80 at% (otherwise between 35 at% and 99 at%). It is also conceivable that the chromium content may be less than 15 at%. Furthermore, an elevated oxygen content was detected in test structures S2, S3, S4, and S5 compared to reference structure S1 (without the provision of a second gas). The oxygen content increased, for example, by at least 1.5 times or at least 2 times.

[0105] In addition, a relatively long electron beam residence time (for test structure S4) can produce an increased nitrogen content in the deposited material compared to a shorter electron beam residence time (for test structures S2, S3, and S5).

[0106] In relation to the results from FIG. 4, it is therefore possible to achieve or aim for a nitrogen content in the produced material of at least 5 at%, preferably at least 10 at%, and more preferably at least 20 at% by the method according to the present invention. The nitrogen content of the produced material can also be increased by at least 2, 3, 4 times and / or 10 times by the method according to the present invention compared to production by the method from the prior art (e.g., without providing a second gas).

[0107] The reduced dipole properties of ammonia can lower the probability of ammonia absorption on the substrate surface compared to nitrogen dioxide. Consequently, the concentration of gaseous ammonia molecules on the substrate surface may increase. This can increase the probability that the desired nitrogen-containing deposit material is already formed in the gaseous phase. This can be simply explained by the fact that the exchange of CO ligands on chromium atoms to NH3 ligands already occurs in the gaseous phase. One possible reaction that may occur here is as follows: Cr(CO)6 + nNH3 → Cr(CO) 6-n (NH3) n + nCO (n=1~6).

[0108] For further analysis, two additional test structures E1 and E2 were generated, and the generation of test structure E2 has the parameter space of the method according to the present invention. Test structures E1 and E2 were generated with a length and width of 20 μm × 20 μm and a height of 10 nm to 20 nm. The test structures were analyzed by X-ray photoelectron spectroscopy (XPS). This analyzed carbon C, oxygen O, chromium in oxide compound Cr-Ox, metallic chromium Cr-Met, nitrogen N, and total chromium content Cr-sum. Test structure E1 was generated as a reference structure by a known method comprising the provision of chromium hexacarbonyl as a first gas and nitrogen dioxide as a second gas, wherein nitrogen dioxide cannot perform inversion oscillation (at the process temperature of electron beam-induced deposition). Test structure E1 was generated with a gas flow rate of 0.5 sccm of the second gas (i.e., nitrogen dioxide) and an electron beam residence time of 5 μs. Test structure E2 was generated via electron beam-induced deposition using chrome hexacarbonyl as the first gas and ammonia as the second gas. The parameter space for the generation process of test structure E2 is as follows: a gas flow rate of 0.25 sccm of the second gas (i.e., ammonia), a process temperature of 17°C, an electron beam residence time of 5 μs, and a frame refresh rate of 2500 μs. Additionally, the process for generating test structure E2 was performed at an electron beam acceleration voltage between 0.3 kV and 1 kV, for example, about 0.6 kV (kV: kilovolts), and an electron beam current between 1 pA and 100 pA, for example, about 28 pA (pA: picoamperes). The pixel pattern was scanned such that the height of the test structure was within the range of 10 nm to 20 nm. To minimize the depletion of the process gas, a scanning pattern processed sequentially every 10 rows was selected. In some examples, for the generation of test structure E2, the gas flow rate of the second gas (e.g., ammonia) was between 0.1 sccm and 2 sccm, between 0.1 sccm and 1 sccm, and / or 0.It may be between 1 sccm and 0.5 sccm. The process temperature may include the (preset) temperature of the first gas and the (preset) temperature of the second gas. In some examples, for the generation of test structure E2, the electron beam residence time may include a range between 0.1 μs and 10 μs, between 0.3 μs and 7 μs, and / or between 1 μs and 6 μs. In some examples, the frame refresh rate may be between 0.5 ms and 5 ms, between 0.7 ms and 4 ms, and / or between 1 ms and 3 ms. Additionally, the process temperature (of the first gas and / or the second gas) may be considered to be within the range of 0°C to 60°C, otherwise between 10°C and 40°C, between 12°C and 30°C, and / or between 12°C and 20°C.

[0109] Further analysis revealed that test structure E2 contains approximately 23 atomic percent (at%) of nitrogen. Thus, it was shown that an elevated nitrogen content within test structure E2 can be achieved through the parameter space of the method according to the present invention. This also suggests that the method according to the present invention enables the generation of high chromium nitride content in sedimentary materials. This effect may be particularly advantageous in the context of irrigation work (RV), as chromium nitride can be a material resistant to aggressive chemical / physical environmental conditions.

[0110] Furthermore, the oxygen content in test structure E2 was significantly lower than that in reference structure E1. The decrease in oxygen content roughly coincided with the nitrogen content occurring in test structure E2. Therefore, it can be inferred that a decrease in oxygen content can roughly correspond to an increase in nitrogen content.

[0111] The carbon content increased minimally in test structure E2 compared to reference structure E1 and remained at a low level (in the single-digit percentage range) in both test structures. Here, it was found that the carbon content (oxygen content) of reference structure E1 had a lower (higher) level than that of reference structure S1 from Fig. 4b. In this regard, it should be noted that reference structure E1 was produced via a deposition method using nitrogen dioxide as an additive gas (and chromium hexacarbonyl as the first gas), while reference structure S1 from Fig. 4b was produced via a deposition method without using an additive gas (thus using only chromium hexacarbonyl as the deposition gas). Therefore, it was found that when an inversion molecule (in this case, ammonia) is used instead of nitrogen dioxide as an additive gas, no significant change in carbon content is caused (and the carbon content can still remain low by the method according to the present invention). Additionally, the content of metallic chromium in test structure E2 could be increased sevenfold compared to E1. The proportion of chromium in the oxide compound was slightly lower in test structure E1 than in test structure E2.

[0112] A reduction in chromium oxide content can be advantageous for EUV lithography methods. Possible chemical reactions that may occur between chromium oxide (e.g., Cr2O3) and hydrogen in an EUV lithography apparatus include, for example, partial reduction of chromium (Cr2O3 + 3H2 → 2Cr + 3H2O) and local changes in the oxidation state of chromium atoms. For example, the oxidation state may change from Cr(III) to Cr(II), Cr(I), and / or Cr(O). Similarly, it is conceivable that the oxidation state may change from Cr(IV) to Cr(III), Cr(II), Cr(I), and / or Cr(O). Local partial changes in the oxidation state of chromium atoms can increase the heterogeneity of the material, thereby reducing its chemical and physical durability. Furthermore, it is conceivable that, for example in an EUV lithography apparatus, reactive hydrogen species may remove oxygen from the chromium oxide-containing material, causing defects in the solid material. These defects can accelerate corrosion of the material during subsequent cleaning processes. Therefore, the reduction in chromium oxide content through the method according to the present invention can minimize the mentioned effects. Furthermore, it is conceivable that the increased chromium nitride content that can be produced through the method according to the present invention further minimizes the mentioned effects associated with a specific chromium oxide content.

[0113] In summary, the repair material produced by the method according to the present invention may be more stable or resistant to the effects that the EUV mask may receive during the processing (e.g., as described herein) in the repair of the EUV mask.

[0114] Test results of the generated chromium nitride-containing deposited metal suggest that the durability, resistance, and stability of the material against external chemical / physical influences have increased compared to conventionally generated materials. In the case of repairing an EUV mask through method (300) (or a method according to the first and / or second embodiments), this may be particularly advantageous when the repaired EUV mask is used for a lithography method. For example, this may increase the number of DUV and / or EUV exposure cycles (of the lithography method) that the repaired lithography mask can undergo before the optical properties of the repaired site change to the extent that they no longer satisfy the specifications required for the critical dimension CD. Additionally, this may lead to a reduction in damage caused by downstream processes, for example, mask cleaning operations. In particular, stability may exist for a cleaning process comprising at least one of the steps of: removal of contaminants, removal of carbon-containing contaminants, removal of particles, use of an oxidizing agent, use of an acid, use of an oxidizing acid, use of an acid and an oxidizing agent, use of a cleaning solution having a pH < 7, use of H2SO4 (e.g., H2O2), use of UV light, use of light capable of reacting with cleaning chemicals to activate them, use of plasma, use of oxygen plasma, use of a basic solution, use of a solution having a pH < 7, and use of an NH3-containing solution. Additionally, the method according to the present invention (first embodiment and / or second embodiment) may reduce corrosion or degradation of deposits (at a repaired site). Degradation may include, in particular, at least one of global progressive corrosion, (gradual) leafing, local corrosion, simultaneous loss of a large area of ​​deposits, and loss of desired optical properties.

[0115] In addition, the following working examples are possible for the method according to the present invention of the first and / or second embodiments. For example, it is conceivable that the second gas comprises at least one of a reducing additive precursor; an additive precursor comprising hydrogen; and an additive precursor comprising at least one nitrogen atom and at least one hydrogen atom. In further examples, it is conceivable that the deposition material and (passivated) surface material produced according to the present invention can also be compressed or stabilized by electron beam bombardment (e.g., in a separate processing operation).

[0116] In some examples, an electron beam acceleration voltage of 0.1 to 2 kV, or 0.2 to 1.5 kV, or 0.3 to 1 kV may be used. In each case, it is possible to use an electron beam current of 28 pA. Alternatively, a current within a different range, for example, 1 to 100 pA, 5 to 80 pA, or 10 to 60 pA, may be considered.

[0117] FIG. 6 shows a schematic section of an exemplary apparatus (500) according to the present invention. The apparatus (500) may be configured to perform the method (300) or the method of the first and / or second aspects of the present invention. In one example, the apparatus (500) of FIG. 5 includes a mask repair apparatus for repairing or processing a lithography mask. The apparatus (500) may be used to localize mask defects and repair or improve them. The apparatus (500) may include parts such as those of the apparatus described in US 2020 / 103751 A1 (see corresponding FIG. 3a therein).

[0118] The exemplary apparatus (500) of FIG. 5 may include a scanning electron microscope (SEM) (501) for providing a particle beam, for example, which is an electron beam (509) in this example. An electron gun (506) may generate an electron beam (509) that can be sent by beam-forming elements (508 and 512) as a focused electron beam (510) onto a lithography mask (502) arranged on a sample stage (504). Additionally, the scanning electron microscope may be used to control parameters / characteristics of the electron beam (e.g., acceleration voltage, residence time, current, focusing, spot size, etc.). The parameters of the electron beam may be adjusted, for example, with respect to the parameter space of the method described herein. The electron beam (509) may function as an energy source to initiate a local chemical reaction in the working area of ​​the lithography mask (502). This can be utilized, for example, for the method described herein (e.g., for the implementation of electron beam-induced deposition of the first embodiment, electron beam-assisted passivation of the second embodiment). Additionally, the electron beam (509) can be utilized for imaging a lithography mask (502). The device (500) may include a detector (514) for detecting electrons.

[0119] To carry out the corresponding method described herein, the exemplary apparatus (500) of FIG. 5 may include at least two storage vessels for at least two different processing gases or precursor gases. A first storage vessel (G1) may store a first gas. A second storage vessel (G2) may store a second gas containing a molecule capable of performing inversion oscillation. The second gas may also be considered as an additive gas. Additionally, in the exemplary apparatus (500), each storage vessel (G1, G2) has a self-gas injection system (532, 547) that may end in a nozzle near the point of incidence of the electron beam (510) on the lithography mask (502). Each storage vessel (G1, G2) may have a self-control valve (546, 531) to control the amount of corresponding gas provided per unit time, i.e., the gas flow rate of the corresponding gas. This may be done in such a way that the gas flow rate is controlled at the point of incidence of the electron beam (510). Additionally, the device (500) may include an additional storage vessel for an additional gas that can be added to the process of the first embodiment and / or the second embodiment as one or more (additive) gases (e.g., oxidizing agents, reducing agents, halides described herein) in one example. The device (500) of FIG. 5 may include a pump system (522) for generating and maintaining the required pressure in the process chamber (585).

[0120] Additionally, the device (500) may include a control unit (518) which may be, for example, part of a computer system (520). In one example, the device (500) may be configured such that the computer system (520) and / or the control unit (518) control process parameters of the method described herein. Such a configuration may enable a controlled or automated implementation of the method according to the invention as described herein, for example, without manual intervention. Such a configuration of the device (500) may be achieved or enabled through a computer program according to the invention as described herein, for example.

[0121] In addition, at least one of (metal, transition metal, main group) alkyl, for example, cyclopentadienyl (Cp) or methylcyclopentadienyl (MeCp), trimethylplatinum (CpPtMe3 or MeCpPtMe3), tetramethyltin SnMe4, trimethylgallium GaMe3, ferrocene Cp2Fe, bisarylchrome Ar2Cr, and other compounds of this kind may be included in the present invention as a first gas (e.g., a deposit gas). In addition, (metal, transition element, main group) carbonyl, for example, chromium hexacarbonyl Cr(CO)6, molybdenum hexacarbonyl Mo(CO)6, tungsten hexacarbonyl W(CO)6, dicobalt octacarbonyl CO2(CO)8, triruthenium dodecacarbonyl Ru3(CO) 12 At least one of iron pentacarbonyl Fe(CO)5 and other compounds of this kind may be included in the present invention as a first gas. Additionally, one of (metal, transition element, main group) alkoxides, such as tetraethoxysilane Si(OC2H5)4, tetraisopropoxytitanium Ti(OC3H7)4 and other compounds of this kind, may be included in the present invention as a first gas.

[0122] In addition, at least one of (metal, transition element, main group) halides, for example, WF6, WCl6, TiCl6, BCl3, SiCl4, and other compounds of this kind may be included in the present invention as a first gas. In addition, at least one of (metal, transition element, main group) complexes, for example, copper bis(hexafluoroacetylacetonate) Cu(C5F6HO2)2, dimethylgold trifluoroacetylacetonate Me2Au(C5F3H4O2), and other compounds of this kind may be included in the present invention as a first gas. In addition, organic compounds, for example, CO, CO2, aliphatic or aromatic hydrocarbons, components of vacuum pump oil, volatile organic compounds, and additional such compounds may be included in the present invention as a first gas.

[0123] Additional embodiments of the present invention are described below.

[0124] Embodiment 1: A method for processing an object for lithography,

[0125] Step of providing a first gas;

[0126] A step of providing a second gas containing a second molecule capable of performing inversion oscillation;

[0127] The method includes the step of providing a particle beam to a work area of ​​an object to generate a depositional material in the work area based at least partially on a first gas and a second gas, and

[0128] A method in which the second gas is provided at a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

[0129] Embodiment 2: The method of Embodiment 1, wherein the second gas is provided at a gas flow rate of less than 0.01 sccm, preferably less than 0.05 sccm, more preferably less than 0.1 sccm.

[0130] Embodiment 3: In any one of the prior embodiments, the particle beam is provided with a particle beam residence time of 0.1 μs to 10 μs, preferably 0.3 μs to 7 μs.

[0131] Embodiment 4: A method in any one of the prior embodiments, wherein the first gas and / or the second gas are provided in such a manner that the deposition material is formed at least partially in the gas phase without the influence of the particle beam.

[0132] Embodiment 5: A method in any one of the prior embodiments, wherein the first gas comprises a first molecule comprising a carbonyl compound.

[0133] Embodiment 6: The method of Embodiment 5, wherein the first molecule comprises a metal carbonyl.

[0134] Embodiment 7: The method of Embodiment 6, wherein the metal carbonyl comprises a chromium carbonyl.

[0135] Embodiment 8: A method in any one of Embodiments 1 to 7, wherein the deposition material comprises chromium nitride.

[0136] Example 9: The method of Example 8, wherein the chromium nitride comprises at least 10 atomic percent nitrogen, preferably at least 15 atomic percent nitrogen, more preferably at least 20 atomic percent nitrogen.

[0137] Embodiment 10: A method in which, in any one of the prior embodiments, the deposition material is produced in such a way that defects of the object are remedied.

[0138] Embodiment 11: The method of Embodiment 10, wherein the defect comprises a clear defect.

[0139] Embodiment 12: A method for treating a surface material of an object for lithography,

[0140] A step of providing a second gas containing a second molecule capable of performing inversion oscillation;

[0141] A step of providing a particle beam to a work area of ​​an object to passivate a surface material within the work area based at least partially on a second gas;

[0142] Embodiment 13: The method of Embodiment 12, wherein the method further comprises the step of generating a surface material in a working area based at least partially on the provision of a first gas and particle beam before passivating the surface material.

[0143] Embodiment 14: The method of Embodiment 12 or 13, wherein the passivation comprises creating a passivation layer on a surface material.

[0144] Embodiment 15: A method in any one of Embodiments 1 to 14, wherein the inversion oscillation comprises a pyramidal inversion of the second molecule.

[0145] Embodiment 16: A method in any one of Embodiments 1 to 15, wherein the second molecule comprises a triangular-pyramidal geometric structure.

[0146] Example 17: A method in any one of Examples 1 to 16, wherein the second molecule comprises nitrogen and hydrogen in a chemical compound.

[0147] Embodiment 18: A method in any one of Embodiments 1 to 17, wherein the second molecule comprises ammonia (NH3).

[0148] Embodiment 19: A method in any one of Embodiments 1 to 18, wherein the second molecule comprises H2N-NH2.

[0149] Example 20: A method in any one of Examples 1 to 19, wherein the second molecule comprises nitrogen and a halogen in a chemical compound.

[0150] Example 21: The method of Example 20, wherein the second molecule comprises at least one of NF3, NCl3, NI3, and NBr3 molecules.

[0151] Example 22: A method in any one of Examples 1 to 21, wherein the second molecule comprises nitrogen, hydrogen, and a halogen in a chemical compound.

[0152] Embodiment 23: The method of Embodiment 22, wherein the second molecule comprises at least one of NH2X (where X contains a halogen); and NHX2 (where X contains a halogen).

[0153] Embodiment 24: A method in any one of Embodiments 1 to 23, wherein the second molecule has a lower probability of absorption in the working area than the NO2 molecule.

[0154] Embodiment 25: A method in any one of Embodiments 1 to 24, wherein the particle beam comprises an electron beam.

[0155] Embodiment 26: An apparatus for processing a lithographic object,

[0156] Means for providing the first gas;

[0157] Means for providing a second gas comprising a second molecule capable of performing inversion oscillation;

[0158] It includes means for providing a particle beam,

[0159] A device configured to perform a method described in any one of embodiments 1 to 25.

[0160] Embodiment 27: An object for lithography, wherein the object is processed by the method described in any one of Embodiments 1 to 25.

[0161] Embodiment 28: A method for lithographically processing a semiconductor-based wafer,

[0162] A method comprising the step of lithographically transferring a pattern associated with an object for lithography onto a wafer, wherein the object is processed by the method described in any one of embodiments 1 to 25.

[0163] Embodiment 29: A computer program comprising instructions that, when executed by a computer system, cause the computer system to perform the method described in any one of Embodiments 1 to 25 and / or the method described in Embodiment 28.

Claims

Claim 1 A method for processing a lithographic object comprising a photomask, an exposure mask, a reticle, and a stamp for nanoimprint lithography, comprising the steps of: providing a first gas as a precursor gas for a deposition material; providing a second gas comprising a second molecule capable of performing inversion oscillation, wherein the integral of the dipole moment (μ) of the second molecule is zero over a specific time interval; and providing a particle beam to a working area of ​​the object to generate the deposition material in the working area based at least partially on the first gas and the second gas, wherein the second gas is provided at a gas flow rate of less than 5 sccm. Claim 2 The method of claim 1, wherein the second gas is provided at a gas flow rate of less than 0.01 sccm. Claim 3 A method according to claim 1 or claim 2, wherein the particle beam is provided with a particle beam residence time of 0.1 μs to 10 μs. Claim 4 A method according to claim 1, wherein the first gas and / or the second gas are provided in such a way that the deposition material is formed at least partially in a gas phase without the influence of the particle beam. Claim 5 A method according to claim 1, wherein the first gas comprises a first molecule comprising a carbonyl compound. Claim 6 The method of claim 5, wherein the first molecule comprises a metal carbonyl. Claim 7 A method according to claim 6, wherein the metal carbonyl comprises a chromium carbonyl. Claim 8 A method according to claim 1 or claim 7, wherein the deposition material comprises chromium nitride. Claim 9 The method of claim 8, wherein the chromium nitride comprises at least 10 atomic percent nitrogen. Claim 10 A method according to claim 1, wherein the deposition material is produced in a manner in which defects of the object are remedied. Claim 11 A method for processing a surface material of a lithographic object comprising a photomask, an exposure mask, a reticle, and a stamp for nanoimprint lithography, comprising the steps of: providing a second gas comprising a second molecule capable of performing inversion oscillation, wherein the integral of the dipole moment (μ) of the second molecule is zero over a specific time interval; and providing a particle beam to a working area of ​​the object to passivate the surface material within the working area based at least partially on the second gas. Claim 12 The method of claim 11 further comprises the step of generating the surface material in the work area based at least partially on providing the particle beam and a first gas as a precursor gas for the surface material before passivating the surface material. Claim 13 A method according to claim 11 or claim 12, wherein the passivation comprises forming a passivation layer on the surface material. Claim 14 A method according to claim 1 or claim 11, wherein the inversion oscillation comprises a pyramidal inversion of the second molecule comprising a triangular-pyramidal geometric structure. Claim 15 The method of claim 1 or claim 11, wherein the second molecule comprises nitrogen and hydrogen in a chemical compound. Claim 16 The method of claim 15, wherein the second molecule comprises ammonia (NH3); and / or the second molecule comprises H2N-NH2. Claim 17 The method of claim 1 or claim 11, wherein the second molecule comprises nitrogen and a halogen in a chemical compound. Claim 18 The method of claim 17, wherein the second molecule comprises at least one of NF3, NCl3, NI3, and NBr3 molecules. Claim 19 The method of claim 1 or claim 11, wherein the second molecule comprises nitrogen, hydrogen, and a halogen in a chemical compound. Claim 20 A method according to claim 19, wherein the second molecule comprises at least one of NH2X (where X contains a halogen); and NHX2 (where X contains a halogen). Claim 21 The method of claim 1 or claim 11, wherein the second molecule has a lower probability of absorption in the working region than the NO2 molecule; and / or the particle beam comprises an electron beam. Claim 22 An apparatus for processing a lithographic object comprising a photomask, an exposure mask, a reticle, and a stamp for nanoimprint lithography, comprising: means for providing a first gas as a precursor gas for a deposition material; means for providing a second gas comprising a second molecule capable of performing inversion oscillation, wherein the integral of the dipole moment (μ) of the second molecule is zero over a specific time interval; and means for providing a particle beam, wherein the apparatus is configured to perform the method described in claim 1 or claim 11. Claim 23 A lithography object comprising a photomask, an exposure mask, a reticle, and a stamp for nanoimprint lithography, wherein the object is processed by the method described in claim 1 or claim 11. Claim 24 A method for lithographically processing a semiconductor-based wafer, comprising the step of lithographically transferring a pattern associated with a lithographic object, including a photomask, an exposure mask, a reticle, and a stamp for nanoimprint lithography, to the wafer, wherein the object is processed by the method described in claim 1 or claim 11. Claim 25 delete

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