SYSTEM AND METHOD FOR THE CHARACTERIZATION AND OPTIMIZATION OF RF TRANSISTORS USING X-PARAMETERS MEASURED UNDER LOAD CONDITIONS OF 50 O IN NON-LINEAR REGIME.

Abstract

Conventional methods for determining the gain and output power of RF / microwave transistors are complex, time-consuming, and dependent on accurate nonlinear models or expensive experimental equipment, such as Load-Pull (LP) and Source / Load-Pull (SLP) test benches. These methods require meticulous calibration and are difficult to implement under varying operating conditions, limiting their efficiency in power amplifier design. The present invention describes a method based on an analytical technique that uses the transistor's X-parameters, measured under 50 Ω load conditions (GL = 0), to calculate the transistor's output power independently of the reflection coefficient at the output port.Unlike conventional methods, this technique does not require an impedance tuner and is applicable to any frequency and input power level, significantly simplifying the design and optimization process. This technique stands out for matching the accuracy of traditional methods but with greater speed by eliminating the complex calibration process. Furthermore, it offers the ability to determine the conditions that optimize or minimize the spectral content of the output power at harmonic frequencies of the fundamental frequency. It also allows for determining the contribution of the input reflection coefficient (GS = 0) to the transistor's output power, as well as determining the output reflection coefficient to maximize the transistor's power-added efficiency (PAE).The novel invention allows for the analytical performance of the experimental method best known as "Source-Load-Pull" (SLP) without the need for impedance tuners or a nonlinear model. This solution is applicable in multiple industries, such as telecommunications, where it optimizes power amplifiers in cellular network base stations, improving energy efficiency and signal quality.