METHOD FOR FORMING A POWER SEMICONDUCTOR WITH A HEAT SINK

MX434732BActive Publication Date: 2026-06-12AMERICAN AXLE & MANUFACTURING INC
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Patent Information

Authority / Receiving Office
MX · MX
Patent Type
Patents
Current Assignee / Owner
AMERICAN AXLE & MANUFACTURING INC
Filing Date
2023-10-24
Publication Date
2026-06-12

AI Technical Summary

Technical Problem

Existing power semiconductors in electric drive units generate significant heat, and current methods for connecting heat sinks using soldered connections are not sufficiently heat tolerant, necessitating a more robust and commercially available solution.

Method used

A method involving a power semiconductor with a heat sink connection using a sintered material, such as silver or copper, between the heat sink and a plate terminal, where the connection is formed by applying a sintering-resistant material, removing it, and then sintering the heat sink onto the terminal under controlled conditions.

Benefits of technology

The sintered connection provides a more heat-tolerant and robust interface between the heat sink and the power semiconductor, enhancing thermal management and durability.

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Abstract

A method for forming a power semiconductor with a heat sink. The method includes: providing a power semiconductor having a power semiconductor die, a plurality of pin terminals, and a plate terminal; the power semiconductor die having a plurality of semiconductor terminals; each pin terminal being electrically coupled to a corresponding semiconductor terminal; the plate terminal being electrically coupled to one of the pin terminals; the plate terminal having an outer surface covered with at least one sintering-resistant material; removing at least one sintering-resistant material from the plate terminal to expose the outer surface; heating a heat sink to a predetermined temperature; and sintering the heat sink onto the outer surface of the plate terminal.
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