SURFACTANTS FOR ELECTRONIC PRODUCTS

Abstract

The present invention relates to pre-texturizing agents, etching agents, and photoresistant stripping agents that can be formulated to include one or more surfactants, from one or more classes of surfactants, such as amino acid derivatives that have surfactant properties.

Description

[0001] This application claims priority to Provisional Application No. 62 / 988,175, filed on March 11, 2020, which is incorporated herein by reference in its entirety. FIELD OF INVENTION

[0002] The present disclosure relates to surfactants for use in electronics. More specifically, the present disclosure relates to surfactants in the preparation of circuit boards by etching and removal of photoresist coatings. Such surfactants may include amino acid derivatives wherein the derivatives have surface-active properties. BACKGROUND OF THE INVENTION

[0003] Surfactants (molecules with surface-active properties) are widely used in circuit board manufacturing in cleaners, etchants, and photoresist strippers. Surfactants may be included as emulsifiers, wetting agents, foaming agents, dispersants, and / or spreadability enhancers.

[0004] Surfactants may be uncharged, zwitterionic, cationic or anionic. Although in principle any class of surfactant is suitable (e.g., cationic, anionic, nonionic, amphoteric), it is possible that a formulation may include a combination of two or more surfactants from two or more classes of surfactants.

[0005] Surfactants are often amphiphilic molecules with a hydrophobic tail group that is relatively water-insoluble, and a hydrophilic head group that is relatively water-soluble. These compounds can adsorb at an interface, such as an interface between two liquids, a liquid and a gas, or a liquid and a solid. In systems comprising relatively polar and relatively non-polar components, the hydrophobic tail preferentially interacts with the relatively non-polar component(s) while the hydrophilic head preferentially interacts with the relatively polar component(s). In the case of an interface between water and oil, the hydrophilic head group preferably extends into the water, while the hydrophobic tail preferably extends into the oil.When added to a water-gas interface, the hydrophilic head group preferentially extends toward the water, while the hydrophobic tail preferentially extends into the gas. The presence of the surfactant disrupts at least some of the intermolecular interaction between water molecules, replacing at least some of the interactions between them. IVIA / t / ZUZZ / UO I44Z water molecules with generally weaker interactions between at least some of the water molecules and the surfactant. This results in reduced surface tension and can also serve to stabilize the interface.

[0006] At sufficiently high concentrations, surfactants can form aggregates that serve to limit the exposure of the hydrophobic tail to the polar solvent. One such aggregate is a micelle. In a typical micelle, the molecules are arranged in a sphere with the hydrophobic tails of the surfactants preferably located within the sphere and the hydrophilic heads of the surfactants preferably located on the outside of the micelle where the heads preferentially interact with the more polar solvent. The effect a given compound has on surface tension and the concentration at the micelle former can serve as defining characteristics for a surfactant. SUMMARY OF THE INVENTION

[0007] The present disclosure provides formulations for use in pretexturizing agents, etchants, and photoresist strippers. These products may be formulated to include one or more surfactants from one or more classes of surfactants described herein. The surfactants may be used as IVIA / t / ZUZZ / UO I44Z emulsifiers, wetting agents, dispersants and / or agents to improve spreadability.

[0008] The present disclosure provides surfactants for pre-texturizing agents, etchants, and photoresist strippers in the form of amino acid derivatives having surface active properties. The amino acids may be synthetic or naturally occurring amino acids, or may be obtained by ring-opening reactions of molecules such as lactams, e.g., caprolactam. The amino acids may be functionalized to form compounds with surface active properties. Typically, these compounds may have low critical micelle concentrations (CMCs) and / or the ability to reduce the surface tension of a liquid.

[0009] The present disclosure provides a formulation for a pre-texturizing agent, comprising at least one surfactant of Formula I, RW°< R2O Formula I where R1 and R2 may be the same or different, and may be selected from the group consisting of IVIA / t / ZUZZ / UO I44Z hydrogen and C1-C1e alkyl, wherein the C1-C1e alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1g alkyl, wherein the C1-C1g alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide;one or more antifoam agents, optionally one or more acids, optionally one or more bases, optionally one or more chelating agents, and one or more solvents;

[0010] The present disclosure further provides a formulation for an etching agent, comprising at least one surfactant of Formula I, R2O Formula 1 wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1g alkyl, wherein the C1-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; hydrofluoric acid (HF), one or more solvents, optionally one or more oxidizing agents, and one or more complexing agents;

[0011] The present disclosure also provides a formulation for a photoresist stripper, comprising at least one surfactant of Formula I, ML / t / ZUZZ / UO I44Z R2O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; an alkanolamine; a sulfoxide or sulfone compound; and a glycol ether.

[0012] The above and other features of the description, and the manner of achieving them, will become more apparent and better understood with reference to the following description of the embodiments taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE FIGURES

[0013] Figure 1 shows a graph of surface tension versus concentration for Surfactant 1 measured at pH = 7 as described in Example Ib, where the Y-axis represents surface tension (γ) in millinewtons per meter (mN / m) and the X-axis represents concentration (c) in millimoles (mM).

[0014] Figure 2 shows a graph of dynamic surface tension as change in surface tension versus time for Surfactant 1 as described in Example 1c, where the Y-axis represents surface tension in millinewtons per meter (mN / m) and the X-axis represents surface age in milliseconds (ms).

[0015] Figure 3 shows a graph of surface tension versus concentration for Surfactant 2 measured at pH = 7 as described in Example 2b, where the Y-axis represents surface tension (γ) in millinewtons per meter (mN / m) and the X-axis represents concentration (c) in millimoles (mM).

[0016] Figure 4 shows a graph of dynamic surface tension as change in surface tension versus time for Surfactant 2 as described in Example 2c, where the Y-axis represents surface tension in millinewtons per meter (mN / m) and the X-axis represents surface age in milliseconds (ms).

[0017] Figure 5 shows a graph of surface tension versus concentration for Surfactant 3 measured at pH = 7 as described in Example 3b, where the Y-axis represents surface tension (γ) in millinewtons per meter (mN / m) and the X-axis represents concentration (c) in millimoles (mM).

[0018] Figure 6 shows a graph of dynamic surface tension as change in surface tension versus time for Surfactant 3 as described in Example 3c, where the Y-axis represents surface tension in millinewtons per meter (mN / m) and the X-axis represents surface age in milliseconds (ms).

[0019] Figure 7 shows a graph of surface tension versus concentration for Surfactant 4 measured at pH = 7 as described in Example 4b, where the Y-axis represents surface tension (γ) in millinewtons per meter (mN / m) and the X-axis represents concentration (c) in millimoles (mM).

[0020] Figure 8 shows a graph of dynamic surface tension as change in surface tension versus time for Surfactant 4 as described in Example 4c, where the Y-axis represents surface tension in millinewtons per meter (mN / m) and the X-axis represents surface age in milliseconds (ms).

[0021] Figure 9 shows a graph of surface tension versus concentration for Surfactant 5 measured at pH = 7 as described in Example 5b, where the Y-axis represents surface tension (γ) in millinewtons per meter (mN / m) and the X-axis represents concentration (c) in millimoles (mM).

[0022] Figure 10 shows a graph of dynamic surface tension as change in surface tension versus time for Surfactant 5 as described in Example 5c, where the Y-axis represents surface tension in millinewtons per meter (mN / m) and the X-axis represents surface age in milliseconds (ms). DETAILED DESCRIPTION OF THE INVENTION

[0023] As used herein, the phrase within any range using these endpoints literally means that any range may be selected from any two values ​​listed before said phrase, regardless of whether the values ​​are at the bottom of the list or at the top of the listing. For example, a pair of values ​​may be selected from two lower values, two higher values, or one lower value and one higher value.

[0024] As used herein, the word alkyl means any saturated carbon chain, which may be a branched or straight chain.

[0025] As used herein, the phrase surface active means that the associated compound is capable of reducing the surface tension of the medium in which it is at least partially dissolved and / or the interfacial tension with other phases and can therefore be at least partially adsorbed onto the liquid / vapor and / or other interfaces. The term surfactant may be applied to such a compound.

[0026] With respect to inaccuracy terminology, the terms about and approximately may be used interchangeably to refer to a measurement that includes the stated measurement and that also includes any measurement that is reasonably close to the stated measurement. Measurements that are reasonably close to the stated measurement deviate from the stated measurement by a reasonably small amount, as understood and readily ascertainable by persons of ordinary skill in the relevant arts. Such deviations may be attributable to measurement errors or minor adjustments made to optimize performance, for example. In the event that it is determined that persons having ordinary skill in the relevant arts would not readily determine the values ​​for differences so IVIA / t / ZUZZ / UO I44Z reasonably small, the terms around and approximately can be understood as plus or minus 10% of the stated value.

[0027] The present disclosure provides formulations of pretexturizing agents, etching agents, and photoresist strippers. I. Pre-texturizing agent

[0028] The present disclosure provides formulations and methods for texturing a photovoltaic wafer surface. To improve the efficiency of converting light energy to electricity, a very low reflection silicon surface is desired. For monocrystalline silicon, for example, this is achieved by anisotropically etching (100) Si wafers to form pyramidal structures on the surface, in a process called texturing. A uniform and dense distribution of pyramids on the silicon wafer surface is desired to achieve low reflectance. Pyramid heights less than 10 pm and of uniform size are desired. The smaller, uniform pyramidal structures ensure good coverage by the passivation layer that is redeposited on top of the textured surface to prevent efficiency losses.The smaller, more uniform pyramidal structures also ensure that the contact lines of. IVIA / t / ZUZZ / UO I44Z metal printed on the silicon surface are narrower, allowing more light to pass through the silicon surface for photoelectron conversion.

[0029] The pre-texturing formulations of the present disclosure may be used to treat silicon wafers, substrates, or silicon films deposited on a different type of substrates (the terms substrate or wafer are used interchangeably herein) in the texturing processes described herein. Silicon wafers treated with the pre-texturing formulation and / or methods of the present disclosure may be used to fabricate photovoltaic cells. Wafers subjected to the pre-texturing formulation and / or methods of the present disclosure may exhibit improved texturing uniformity and reduced reflectivity compared to wafers not subjected to this treatment.

[0030] Additional benefits that can be achieved with the method and / or formulation of the present disclosure may include one or more of the following: 1) the creation of pyramidal structures on the wafer surface having a high density and an average height of less than 10 pm, or less than 8 pm, or less than 5 pm, or less than 4 pm; 2) decreased reflectance of the textured surface; 3) decreased time required to form pyramids and / or form the textured surface with low IVIA / t / ZUZZ / UO I44Z reflectance; 4) decreased sensitivity of texturing quality to isopropyl alcohol concentration in the texturing process, and in some embodiments, texturing can be performed without isopropyl alcohol or any other additives needed to promote texturing in one or more texturizing compositions; 5) when the pre-texturizing formulation and / or method of the present disclosure is used in the texturizing process, the need for additives in the texturizing (etching) composition or etching solution to improve texturing quality and performance can be reduced or eliminated; 6) the total amount of silicon etched in the texturizing step can be reduced; 7) batch life of the texturizing composition (also referred to as texturizing or etchant solution) can be increased; 8) passivation layer coverage can be improved;9) the metal contact lines printed on the front of the wafer can be narrower; and 10) the wettability of the silicon surface can be increased prior to texturing.

[0031] Pre-texturing using the pre-texturing formulations of the present disclosure, as well as the texturing methods described herein, can reduce texturing time compared to known methods and formulations. This can result in a decrease in IVIA / t / ZUZZ / UO I44Z processing time and therefore increased wafer processing throughput. Furthermore, when using the pretexturing formulations and / or methods of the present disclosure, they may change little over time or show little sensitivity to the concentrations of one or more texturizing compositions in one or more texturizing batches during the texturizing process, thereby resulting in improvements in process robustness; therefore, longer or shorter texturizing times may be utilized in the event of a process upset without detriment to the performance of the photovoltaic device.

[0032] Processing of photovoltaic monocrystalline silicon wafers generally involves a first stage or stages of cleaning to remove any contamination and de-saw damage from the cut wafers (cut from ingots) usually in concentrated alkaline solutions, followed by texturing in dilute alkaline solutions to generate a pyramidal texture on the surface, which reduces the reflectivity of the surface and allows more light to be converted into electricity, thus increasing the efficiency of the wafer. For polycrystalline silicon wafers, processing may involve a first stage or stages of cleaning to remove any contamination, followed directly by texturing. It is desirable to have as low a reflectivity as possible. IVIA / t / ZUZZ / UO I44Z The present disclosure provides pretexturing formulations and methods for improving wafer surface texturing. The present disclosure provides methods for treating a wafer surface with a pretexturing formulation comprising one or more surfactants or one or more surfactants in a solution. The formulation modifies the wafer surface and results in a high pyramid nucleation density when texturing monocrystalline silicon wafers, resulting in a desired uniform distribution of small pyramids. For polycrystalline silicon wafers, the surface modification improves the uniformity of the textured surface and may result in lower surface reflectivity.

[0033] The pre-texturizing formulations provided by the present disclosure may include one or more surfactants selected from one or more classes of surfactants, one or more antifoaming agents, optionally one or more acids, optionally one or more bases, optionally one or more chelating agents, and one or more solvents. 1. Surfactant

[0034] The pre-texturizing agents of the present disclosure comprise one or more surfactants, also referred to as a surfactant system. The choice of one or more surfactants may depend on their ability to modify the wafer surface to nucleate the pyramids and clean the wafer surface.

[0035] Surfactants suitable for use in the pre-texturizing formulation of the present disclosure include one or more surfactants and / or co-surfactants of Formula I, R2O IVIA / t / ZUZZ / UO I44Z Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and Ci-Cs alkyl, wherein the Ci-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Ce alkyl, wherein the Ci-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide;

[0036] In particular, suitable surfactants or co-surfactants may include one or more of any of the surfactants 1-5 described herein.

[0037] The amount of the surfactant system in the pre-texturizing formulation may range from about 0.01 wt% or greater, about 0.1 wt% or greater, about 1 wt% or greater, about 5 wt% or greater, about 10 wt% or greater, about 15 wt% or greater, or about 20 wt% or less, about 25 wt% or less, about 30 wt% or less, or within any range using these endpoints. 2. Antifoaming agents

[0038] The pre-texturizing formulations of the present disclosure may further comprise one or more antifoaming agents / antifoaming agents. The antifoaming agents may be selected from, but not limited to: silicones, organic phosphates, ethylene oxide / propylene oxide (EO / PO) based antifoams containing IVIA / t / ZUZZ / UO I44Z polyethylene glycol and polypropylene glycol copolymers, alcohols, white oils or vegetable oils and waxes are long chain fatty alcohols, fatty acid soaps or esters. Some agents, such as some silicone surfactants and the surfactants of the present disclosure, can function as both an antifoam agent and a surfactant.

[0039] Antifoam agents may be present in the pre-texturizing formulations in an amount ranging from about 0.0001 wt. % or greater, about 0.001 wt. % or greater, about 0.01 wt. % or greater, about 0.1 wt. % or greater, about 0.2 wt. % or greater, about 0.5 wt. % or greater, or about 1.0 wt. % or less, about 1.5 wt. % or less, about 2.0 wt. % or less, about 3.0 wt. % or less, about 3.5 wt. % or less, about 4.0 wt. % or less, about 4.5 wt. % or less, about 5.0 wt. % or less, or within any range using these endpoints. 3. Acid

[0040] Organic acids function to enhance the removal of trace metals, organic and inorganic residues. Organic acids can be chosen from a IVIA / t / ZUZZ / UO I44Z A wide range of acids, including but not limited to: oxalic acid, citric acid, maleic acid, malic acid, malonic acid, gluconic acid, glutaric acid, ascorbic acid, formic acid, acetic acid, ethylenediamine, tetraacetic acid, diethylenetriaminepentaacetic acid, glycine, alanine, cystine, sulfonic acid, various sulfonic acid derivatives, or mixtures thereof. Salts of these acids may also be used. A mixture of these acids / salts may also be used.

[0041] The pre-texturizing formulation may further include inorganic acids and / or their salts. The inorganic acids and / or their salts may be used in combination with other organic acids and / or their salts. Suitable inorganic acids include hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, hydrofluoric acid, sulfamic acid, etc. A mixture of these acids / salts may also be used.

[0042] The pre-texturizing compositions of the present disclosure may include amounts of acids and / or their salts (acids / salts) of about 0% by weight or greater, about 0.1% by weight or greater, about 5% by weight or greater, about 10% by weight or more. % by weight or greater, or about 15% by weight or less, about 20% by weight or less, about 25% by weight or less, about 30% by weight or less, or within IVIA / t / ZUZZ / UO I44Z of any range using these endpoints.

[0043] The pre-texturizing compositions of the present disclosure may include amounts of acids and / or their salts (acids / salts) of about 0 wt % or greater, about 0.1 wt % or greater, about 5 wt % or greater, about 10 wt % or more, or about 15 wt % or less, about 20 wt % or less, about 25 wt % or less, about 30 wt % or less, or within any range using these evaluation criteria. 4. Base

[0044] The pre-texturizing formulations of the present disclosure may further comprise one or more bases. Suitable bases include, but are not limited to: ammonium hydroxide, potassium hydroxide, a quaternary ammonium hydroxide, an amine, guanidine carbonate, and organic bases. The bases may be used alone or in combination with other bases. Examples of suitable organic bases include, but are not limited to: hydroxylamines, ethylene glycol, glycerol, organic amines such as primary, secondary, or tertiary aliphatic amines, alicyclic amines, aromatic amines, and heterocyclic amines, aqueous ammonia, and quaternary ammonium hydroxides, such as hydroxylamine (NH2OH), N-methylhydroxylamine, N,N-dimethylhydroxylamine N,N-Diethylhydroxylamine, IVIA / t / ZUZZ / UO I44Z monoethanolamine, ethylenediamine, 2-(2-aminoethylamino)ethanol, diethanolamine, N-methylaminoethanol, dipropylamine, 2-ethylaminoethanol, dimethylaminoethanol, ethyldiethanolamine, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, N-methylbenzylamine, pyrrole, pyrrolidine, pyrrolidone, pyridine, morpholine, pyrazine, piperidine, N-hydroxyethylpiperidine, oxazole, thiazole, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide (2-hydroxyethyl)tripropylammonium and (1-hydroxypropyl)trimethylammonium hydroxide.

[0045] Pre-texturizing formulations may include bases in an amount ranging from about 0% by weight or greater, about 1% by weight or greater, about 5% by weight or greater, or about 10% by weight or less, about 15% by weight or more or less, about 20% by weight or less, or within any range using these evaluation criteria.

[0046] The pH of pre-texturizing formulations can also be controlled by adjusting the concentrations of acids and bases. pH can be a factor IVIA / t / ZUZZ / UO I44Z to control the adsorption of the surfactant on the substrate surface and therefore the quality of the resulting texturing at the texturing stage. 5. Optional remaining agents

[0047] The pre-texturizing and / or texturizing compositions of this invention may further comprise one or more chelating agents. The chelating agents may be selected from, but are not limited to: ethylenediaminetetraacetic acid (EDTA), N-hydroxyethylethylenediaminetriacetic acid (NHEDTA), nitrilotriacetic acid (NTA), diethylenetriaminepentaacetic acid (DPTA), ethanoldiglycinate, citric acid, gluconic acid, oxalic acid, phosphoric acid, tartaric acid, methyldiphosphonic acid, aminotrimethylenephosphonic acid, ethylidene-diphosphonic acid, 1-hydroxyethylidene-l,1-diphosphonic acid, 1-hydroxypropylidene-l,1-diphosphonic acid, IVIA / t / ZUZZ / UO I44Z ethylaminobismethylenephosphonic acid, dodecylaminobismethylenephosphonic acid, nitrilotrmethylenephosphonic acid, ethylenediaminebismethylenephosphonic acid, ethylenediaminetetrakismethylenephosphonic acid, hexadiaminetetrakismethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid and 1,2-propanediaminotetrakismethylenephosphonic acid or ammonium salts, organic amine salts, maronic acid, succinic acid, dimercaptosuccinic acid, glutaric acid, maleic acid, lysic acid, fumaric acid, polycarboxylic acids such as tricarbaryl acid, propan-1,1,2,3-tetracarboxylic acid, butan-1,2,3,4-tetracarboxylic acid, pyromellitic acid, oxycarboxylic acids such as glycolic acid, β-hydroxypropionic acid, citric acid, malic acid, tartaric acid, pyruvic acid, diglycol acid, salicylic acid, gallic acid, polyphenols such as catechol, pyrogallol, phosphoric acids such as pyrophosphoric acid, polyphosphoric acid,Heterocyclic compounds such as 8-oxyquinoline and diketones such as α-dipyridyl acetylacetone.

[0048] The pre-texturizing formulations of the present disclosure may include chelating agents in an amount of about 0% by weight or greater, about 1% by weight or greater, about 2% by weight or greater, about 3% by weight or greater, about 4% by weight or greater, about 5% by weight or greater, or about 6% by weight or less, about 7% by weight or less, about 8% by weight or less, about 9% by weight or less, about 10% by weight or less, or within any range using these evaluation criteria. 6. Solvents

[0049] The pre-formulation may be an aqueous composition comprising water as a solvent, such as water, water DI or purified water; however, ordinary solvents can be used instead of or in addition to water, including alcohols, glycols, acetone, and the like, as those skilled in the art know. Pre-texturizing formulations may comprise more than 50% by weight of water based on the total weight of the formulations. 7. Other additives

[0050] The pre-texturizing composition comprising a surfactant may also comprise one or more additives to promote cleaning and / or texturizing (etching) of the wafer surface. The cleaning additives would help remove residues left on the surface even after a saw damage removal step, for example, if applicable. Optionally, the pre-texturizing composition of this invention may comprise one or more additional components including inorganic or organic acids, bases, chelating agents, dispersants, and antifoaming agents or mixtures thereof. Acids and bases and other additives may be added to the pre-texturizing composition, for example, to improve its cleaning performance.

[0051] The pre-texturizing formulations of the present disclosure may further comprise one or more dispersing agents. Suitable dispersing agents include the surfactants of the present disclosure as well as triethanolamine lauryl sulfate, ammonium lauryl sulfate, polyoxyethylene alkyl ether triethanolamine sulfate, acrylamide methyl propane sulfonates, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene higher alcohol ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyoxyethylene derivatives, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tetraoleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monooleate ... polyethylene sorbitan, polyethylene glycol monostearate, polyethylene glycol distearate,Polyethylene glycol monooleate, polyoxyethylene alkylamine, polyoxyethylene hardened castor oil, alkylalkanolamide, polyvinylpyrrolidone, cocoamine acetate, stearylamine acetate, lauryl betaine, stearyl betaine, lauryldimethylamine oxide and 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolinium betaine.

[0052] Dispersing agents may be present in the pre-texturizing formulation in an amount of about 0% by weight or greater, about 0.1% by weight or greater, about 0.5% by weight or greater, about 1.0% by weight or greater, IVIA / t / ZUZZ / UO I44Z about 1.5 wt % or greater, or about 2.0 wt % or less, about 2.5 wt % or less, about 3.0 wt % or less, about 3.5 wt % or less, about 4.0 wt % or less, about 4.5 wt % or less, about 5.0 wt % or less, or within any range using these evaluation criteria.

[0053] The pre-texturizing formulations may further include other additives, such as sugar or sugar alcohols, such as xylitol, mannose, glucose, and the like. The pre-texturizing formulations may contain these additives in amounts of about 0% by weight or greater, about 1% by weight or greater, about 10% by weight or greater, about 20% by weight or greater, or about 30% by weight or less, about 40% by weight or less, about 50% by weight or less, or within any range using these evaluation criteria.

[0054] The pre-texturizing formulation may also include oxidizing agents such as nitric acid, peroxides, and hypochlorites. The oxidizing agents may be present in amounts of about 0% by weight or greater, about 1% by weight or greater, about 10% by weight or greater, about 20% by weight or greater, or about 30% by weight or less, about 40% by weight or less, about 50% by weight or less, or within IVIA / t / ZUZZ / UO I44Z of any range using these evaluation criteria.

[0055] The pre-texturizing formulations may also include corrosion inhibitors to protect the process equipment material from corrosion resulting from exposure to the pre-texturizing treatment compositions or texturizing etch compositions.

[0056] Suitable corrosion inhibitors may include compounds such as 1,2,4 triazole, aminotriazole, benzotriazole, tolytriazole, mercaptobenzothiazole. The formulations may also include corrosion inhibitors such as ascorbic acid which are chemically reducing in nature. 8. Method of use

[0057] The pre-texturizing formulations of the present disclosure may be used in at least one pre-texturizing step in a multi-step method for texturing a wafer which may be a monocrystalline substrate (e.g., Si). <100> or Yes <lll>), a microcrystalline silicon substrate, a multicrystalline silicon substrate, a deformed silicon substrate, an amorphous silicon substrate, a doped or undoped polysilicon substrate, glass, sapphire, or any type of substrate containing silicon. The substrate may also be a silicon film deposited on a different type of substrate, such as a metal, glass, or polymer. The pre-texturing step that precedes the IVIA / t / ZUZZ / UO I44Z texturizing step is a pretreatment step involving the use of the formulation of the present disclosure, comprising a surfactant or mixtures of more than one surfactant in a solution.

[0058] It is believed that the pre-texturizing formulation comprising one or more surfactants improves (decreases) the reflectance of the wafers after or during the pre-texturizing step(s) and the texturizing step(s). The pre-texturizing step will utilize the pre-texturizing formulation of the present disclosure comprising the surfactant, and the texturizing step may be any standard texturizing or etching step utilizing any known etching composition or etching solution, also commonly referred to as a wet etchant. For example, the texturizing step may use a standard texturizing solution in a standard texturizing batch.

[0059] The pre-texturing formulation of the present disclosure, when used in a pre-texturing step, can provide the additional benefit of cleaning the silicon surface. Once the texturing process is complete, the quality of the texturing is improved, with the formation of small, high-density pyramids for the case of monocrystalline silicon and a more uniform textured surface for the case of multicrystalline silicon, leading to lower reflectance. IVIA / t / ZUZZ / UO I44Z

[0060] The present disclosure further provides methods for texturizing a silicon wafer comprising the step of wetting said wafers with one or more pre-texturizing formulations described herein, and methods for texturizing a silicon wafer comprising the step of wetting said wafer with a pre-texturizing formulation described herein, methods for texturizing silicon wafers comprising the steps of: wetting said wafer with a pre-texturizing formulation as described herein; and wetting said wafer with an etch composition. Any of the pre-texturizing formulations described above may be used in the methods of the present disclosure.

[0061] The texturizing process of the present disclosure may be a multi-stage texturizing process comprising at least a pre-texturizing step followed by a texturizing step. The multi-stage texturizing process may also comprise one or more rinsing steps, one or more cleaning steps, one or more optional saw damage removal steps, and / or other steps. The wafer may be wetted with the pre-texturizing formulation of the present disclosure prior to a saw damage removal step, prior to the texturizing (etching) step, or prior to the steps IVIA / t / ZUZZ / UO I44Z saw damage removal and texturing.

[0062] The wafers may be rinsed in separate rinsing steps before and after the pretexturing and / or texturing steps. Wetting may be performed at room temperature or at elevated temperature. The wafer may be wetted with the pretexturizing formulation of the present disclosure for a time that may vary depending on the method by which the pretexturizing formulation of the present disclosure is applied to the wafer. II. Etching Agents

[0063] The present disclosure provides etching agent formulations. The semiconductor industry is rapidly reducing the dimensions and increasing the density of electronic circuits and electronic components in microelectronic devices, silicon chips, liquid crystal displays, MEMS (microelectromechanical systems), printed circuit boards, and the like. Integrated circuits therein are being layered or stacked with steadily decreasing thicknesses of the insulating layer between each circuit layer and ever-smaller feature sizes. As feature sizes have shrunk, patterns have become smaller, and device performance parameters have become more stringent and robust. As a result, several problems that ML / t / ZUZZ / UO I44Z could be tolerated until now, can no longer be tolerated or have become a bigger problem due to the smaller function size.

[0064] In the production of advanced integrated circuits, to minimize the problems associated with higher density and to optimize performance, high k and low k insulators and a variety of barrier layer materials have been employed.

[0065] Tantalum (Ta) and tantalum nitride (TaN) are used for semiconductor devices, liquid crystal displays, MEMS (microelectromechanical systems), printed circuit boards and the like, and as ground layers and top layers for precious metals, aluminum (Al) and copper (Cu) wiring. In semiconductor devices, it can be used as a metal barrier, hard mask or gate material.

[0066] In the construction of devices for these applications, Ta and TaN frequently need to be etched. In the various types of uses and environments of Ta and TaN devices, other layers are in contact or exposed at the same time these two materials are being etched. Highly selective etching of Ta and TaN in the presence of these other materials (e.g., metallic conductors, dielectrics, and hard tags) is required for device performance and life. IVIA / t / ZUZZ / UO I44Z

[0067] The present disclosure includes formulations for etching processes for selectively etching Ta and / or TaN relative to metal conductive layers, hard mask layers, and low-k dielectric layers that are present in the semiconductor device. More specifically, the present disclosure relates to compositions and processes for selectively etching Ta and / or TaN relative to copper and low-k dielectric layers.

[0068] The etchant formulations of the present disclosure may have a relatively high Ta / Cu and / or TaN / Cu etch selectivity (i.e., a high ratio of Ta etch rate to Cu etch rate and / or a high ratio of TaN etch rate to Cu etch rate, Rate). In some embodiments, the etchant composition may have a Ta / Cu and / or TaN / Cu etch selectivity. TaN / Cu of about 2 or greater, about 3 or greater, about 4 or greater, about 5 or greater, about 6 or greater, about 7 or greater, about 8 or greater, about 9 or greater, about 10 or greater, about 15 or greater, about 20 or greater, about 30 or greater, about 40 or greater, about 50 or greater, or about 60 or less, about 70 or less, about 80 or less, about 90 or less, approximately 100 or less, or within any range using these evaluation criteria. IVIA / t / ZUZZ / UO I44Z

[0069] The etchant formulations of the present disclosure may have a relatively high TaN / dielectric material etch selectivity (e.g., SiO2 or low k materials) and / or TaN / dielectric material (i.e., a high ratio of Ta to dielectric etch rate, etch rate, and / or a high ratio of TaN etch rate to dielectric etch rate). In some embodiments, the etchant composition may have a Ta / dielectric material and / or TaN / dielectric material etch selectivity of about 20 greater, about 30 greater, about 40 greater, about 50 greater, about 60 greater, about 70 greater, about 80 greater, about 90 greater, about 100 greater, about 150 greater, about 200 greater, about 300 greater, about 400 greater, about ! 500 greater, 0 about 600 less, about 700 less, about 800 less, about 900 less, about 1000 less, 0 within any range using these evaluation criteria.

[0070] The etchant of the present disclosure may include hydrofluoric acid (HE), one or more surfactants selected from one or more classes of surfactants, one or more solvents, optionally one or more oxidizing agents, and one or more complexing agents. 1. Hydrofluoric acid

[0071] It is believed that hydrofluoric acid can facilitate and enhance the removal of Ta and / or TaN on a semiconductor substrate during the etching process.

[0072] Hydrofluoric acid may be present in the etchant formulation in an amount of about 0.1 wt % or greater, about 0.2 wt % or greater, about 0.4 wt % or greater, 0.5 wt % or greater, about 0.6 wt % or greater, about 0.8 wt % or greater, about 1.0 wt % or greater, about 1.2 wt % or greater, about 1.4 wt % or greater, about 1.5 wt % or greater, or about 2.0 wt % or greater, about 2.5 wt % or less, about 3 wt % or less, about 3.5 wt % or less, about 4.0 wt % or less, about 4.5 wt % or less, about 5.0 wt % or less, or within any range using these evaluation criteria. 2. Surfactant

[0073] The etchant formulations of the present disclosure comprise one or more surfactants, also referred to as a surfactant system. The surfactant IVIA / t / ZUZZ / UO I44Z can facilitate the homogeneity of the etching composition and help dissolve components (e.g. a sulfonic acid) in the solvent.

[0074] Surfactants suitable for use in the etching formulations of the present disclosure include one or more surfactants and / or co-surfactants of Formula I, R2O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1e alkyl, wherein the C1-C1e alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1g alkyl, wherein the C1-C1g alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide;

[0075] In particular, suitable surfactants or co-surfactants may include one or more of any of the surfactants 1-5 described herein.

[0076] The surfactant may be present in the etchant formulations in an amount of about 0.0001 wt % or greater, about 0.01 wt % or greater, about 0.1 wt % or greater, about 0.2 wt % or greater, about 0.3 wt % or greater, about 0.4 wt % or greater, about 0.5 wt % or greater, or about 0.6 wt % or less, about 0.7 wt % or less, about 0.8 wt % or less, about 0.9 wt % or less, about 1.0 wt % or less, or within any range using these evaluation criteria. 3. Solvents

[0077] The etchant formulations of the present disclosure may include one or more solvents. The etching composition may include a first solvent which is a carboxylic acid. Carboxylic acids used as the first solvent may facilitate and enhance the etching. IVIA / t / ZUZZ / UO I44Z removal of Ta and / or TaN on a semiconductor substrate during the etching process.

[0078] Suitable first solvents may include a carboxylic acid of formula: R-COOH, where R is H or Ci-Ce alkyl, such as formic acid, acetic acid, trifluoroacetic acid, propionic acid, lactic acid, butyric acid, valeric acid and caproic acid.

[0079] The first solvent may be the majority component of the etchant formulation of this disclosure. For example, the first solvent may be present in the etchant formulation in an amount of about 70% by weight or greater, about 75% by weight or greater, about 80% by weight or greater, about 85% by weight or greater, or about 90% by weight or less, about 95% by weight or less, about 96% by weight or less, about 97% by weight or less, about 98% by weight or less, about 99% by weight or less, about 99.9% by weight or less, or within any range using these evaluation criteria.

[0080] Alternatively, the etchant formulation of the present disclosure may include two or more solvents. For example, the etching composition may include at least a second solvent selected from the group IVIA / t / ZUZZ / UO I44Z consisting of organic solvents (other than carboxylic acids) and inorganic solvents. Suitable inorganic solvents include water and aqueous solutions. The water may be deionized and ultrapure, contain no organic contaminants, and have a minimum resistivity of about 4 to about 17 megaohms, or at least about 17 megaohms.

[0081] At least one second solvent (e.g., water) may be present in an amount of about 0.01 wt. % or greater, about 0.1 wt. % or greater, about 0.5 wt. % or greater, about 1 wt. % or greater, about 2 wt. % or greater, about 4 wt. % or greater, about 5 wt. % or greater, or about 6 wt. % or less, about 7 wt. % or less, about 8 wt. % or less, about 9 wt. % or less, about 10 wt. % or less, or within any range using these evaluation criteria.

[0082] The second solvent may be an organic solvent other than a carboxylic acid. For example, the organic solvent may be a hydrophobic organic solvent having a partition coefficient (log P) of about 0 or greater, about 0.1 or greater, about 0.2 or greater, about 0.3 or greater, about 0.5 or greater, about 1.0 or greater, about 1.5 or greater, about 2.0 or greater, or about 2.5 or less, about 3.0 or less, about 3.5 or less, about 4.0 or less, about 4.5 or less, about 5.0 or less, or within any range using these evaluation criteria.

[0083] As used herein, the partition coefficient log P is obtained from a two-phase system of n-octanol and water. In some embodiments, the organic solvent may be an alcohol or an ether. The ether may be an alkylene glycol ether (e.g., a dialkylene glycol ether, a trialkylene glycol ether, and a tetraalkylene glycol ether). Examples of such organic solvents include benzyl alcohol, diethylene glycol butyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol diethyl ether, tetraethylene glycol dimethyl ether, and dipropylene glycol dimethyl ether. Without intending to be bound by theory, it is believed that the use of a hydrophobic organic solvent may inhibit the removal of Cu without reducing the removal of Ta or TaN during the etching process.

[0084] At least one second solvent (e.g., an organic solvent) may be present in an amount of about 0.1 wt. % or greater, about 0.2 wt. % or greater, about 0.4 wt. % or greater, about 0.5 wt. % or greater, greater, about 0.6 wt. % or greater, about 0.8 wt. % or greater, about 1.0 wt. % or greater, about 1.5 wt. % or greater, about 2.0 wt. % or greater, about 2.5 wt. % or greater, about 5.0 wt. % or greater, or about 6.0 wt. % or less, about 8.0 wt. % or less, about 10 wt. % or less, about 15 wt. % or less, about 20 wt. % or less, or within any range using these evaluation criteria. 4. Oxidizing agents

[0085] The etchant formulations of the present disclosure may optionally include any oxidizing agent suitable for use in microelectronic applications. The oxidizing agent may facilitate and enhance the removal of Ta and / or TaN on a semiconductor substrate. Suitable oxidizing agents include, but are not limited to, oxidizing acids or salts thereof (e.g., nitric acid, permanganic acid, or potassium permanganate), peroxides (e.g., hydrogen peroxide, dialkyl peroxides, urea hydrogen peroxide), persulfonic acid (e.g., hexafluoropropanepersulfonic acid, methanepersulfonic acid, trifluoromethanepersulfonic acid, or p-toluenepersulfonic acid), and IVIA / t / ZUZZ / UO I44Z their salts, ozone, percarbonic acids (e.g. peracetic acid) and their salts, perphosphoric acid and its salts, persulfuric acid and its salts (e.g. ammonium persulfate or tetramethylammonium persulfate), perchloric acid and its salts (e.g. ammonium perchlorate, sodium perchlorate or tetramethylammonium perchlorate) and periodic acid and its salts (e.g. periodic acid, ammonium periodate or tetramethylammonium periodate). These oxidizing agents may be used alone or in combination.

[0086] The oxidizing agent may be present in the etchant formulation in an amount of about 0.01 wt % or greater, about 0.02 wt % or greater, about 0.04 wt % or greater, about 0.05 wt % or greater, about 0.06 wt % or greater, about 0.08 wt % or greater, about 0.1 wt % or greater, about 0.15 wt % or greater, about 0.2 wt % or greater, or about 0.25 wt % or less, about 0.3 wt % or less, about 0.35 wt % or less, about 0.4 wt % or less, about 0.45 wt % or less, about 0.5 wt % or less, or within any range using these evaluation criteria.

[0087] Alternatively, the etchant formulations of the present disclosure may exclude an agent IVIA / t / ZUZZ / UO I44Z oxidizer (e.g., nitric acid). In such embodiments, the etching composition may still selectively etch Ta and / or TaN relative to other materials (e.g., metal conductive layers, hard mask layers, and low-k dielectric layers) on a patterned semiconductor substrate (e.g., a wafer patterned substrate). 5. Complexing agents

[0088] The etchant formulations of the present disclosure may include any suitable complexing agents. The complexing agents may facilitate and enhance the removal of Ta and / or TaN on a semiconductor substrate, while inhibiting the removal of Cu exposed to the etchant composition during the etching process. Suitable complexing agents may be selected from the group consisting of polycarboxylic acids and hydroxycarboxylic acids. As used herein, the term "polycarboxylic acid" refers to a compound containing two or more (e.g., two, three, or four) carboxyl (COOH) groups. Examples of suitable polycarboxylic acids include oxalic acid, malonic acid, succinic acid, glutaric acid, and adipic acid.As used herein, the term hydroxycarboxylic acid refers to compounds containing at least one (e.g., two, three, or four) hydroxyl (OH) group and at least one (e.g., IVIA / t / ZUZZ / UO I44Z example, two, three or four) carboxyl groups (COOH). Examples of suitable hydroxycarboxylic acids include citric acid and 2-hydroxybenzoic acid. In some embodiments, the polycarboxylic acid does not include any hydroxyl groups. In some embodiments, the hydroxycarboxylic acid includes only one hydroxyl group.

[0089] The complexing agent may be included in the etchant formulation in an amount of about 0.1% by weight or greater, about 0.2% by weight or greater, about 0.4% by weight or greater, about 0.5% by weight or greater, about 0.6% by weight or greater or greater, about 0.8% by weight or greater, about 1.0% by weight or greater, about 1.5% by weight or greater, about 2.0% by weight or greater, about 2.5% by weight or greater, about 5.0% by weight or greater, or about 6.0% by weight or less, about 6.5% by weight or less, about 7.0% by weight or less, about 7.5% by weight or less, about 8.0% by weight or less, about 8.5% by weight or less, about 9.0% by weight or less, about 9.5% by weight or less, about 10% by weight or less, or about 11% by weight or less. by weight or less, or within any range using these evaluation criteria. 6. Other additives

[0090] Etching agent formulations of the IVIA / t / ZUZZ / UO I44Z The present disclosure may further include at least one hexafluorosilicate compound. The hexafluorosilicate compounds described below can facilitate and enhance the removal of Ta and / or TaN on a semiconductor substrate while inhibiting the removal of a dielectric material (SiO2) exposed to the etching composition during the etching process. Suitable hexafluorosilicate compounds include hexafluorosilicic acid (H2SiF6) and salts thereof. Specific examples of suitable hexafluorosilicate compounds include H2SiF6, Na2SiF6, K2SiF6, and (NH4)2SiF6.

[0091] The hexafluorosilicate compound may be present in the etchant formulation in an amount of about 0.1 wt % or greater, about 0.2 wt % or greater, about 0.4 wt % or greater, 0.5 wt % or greater, about 0.6 wt % or greater, about 0.8 wt % or greater, about 1.0 wt % or greater, about 1.2 wt % or greater, about 1.4 wt % or greater, about 1.5 wt % or greater, or about 2.0 wt % or greater, about 2.5 wt % or less, about 3 wt % or less, about 3.5 wt % or less, about 4.0 wt % or less, about 4.5 wt % or less, about 5.0 wt % or less, or within any range using these ML / t / ZUZZ / UO I44Z 6 evaluation criteria.

[0092] The etchant formulations of the present disclosure may further include at least one sulfonic acid. Sulfonic acids may facilitate and enhance the removal of Ta and / or TaN from a semiconductor substrate during the etching process. Examples of suitable sulfonic acids include p-toluene sulfonic acid, methanesulfonic acid, or dodecylbenzene sulfonic acid.

[0093] The sulfonic acid may be present in the etching formulations in an amount of about 0.1% by weight or greater, about 0.2% by weight or greater, about 0.4% by weight or greater, about 0.5% by weight or greater, about 0.6% by weight or greater, about 0.8% by weight or greater, about 1.0% by weight or greater, about 1.5% by weight or greater, about 2.0% by weight or greater, about 2.5% by weight or greater, about 5.0% by weight or greater, or about 6.0% by weight or less, about 6.5% by weight or less, about 7.0% by weight or less, about 7.5% by weight or less, about 8.0% by weight or less, about 8.5% by weight or less, about 9.0% by weight or less, about 9.5% by weight or less, about 10% by weight or less than, or within any range using these criteria MA / t / ZUZZ / UO I44Z evaluation. rinsing solvent after the contacting step and / or drying the semiconductor substrate after the rinsing step. In some embodiments, the method does not substantially remove Cu or a dielectric material (e.g., SiO2) on the semiconductor substrate. For example, the method does not remove more than 5% by weight (e.g., more than 3% by weight or more than 1% by weight) of Cu or a dielectric material on the semiconductor substrate.

[0097] The etching method may include the steps of: 1) providing a semiconductor substrate containing Ta and / or TaN; 2) contacting the semiconductor substrate with an etching composition described herein; 3) rinsing the semiconductor substrate with one or more suitable rinsing solvents; and 4) optionally, drying the semiconductor substrate (e.g., by any suitable means that removes the rinsing solvent and does not compromise the integrity of the semiconductor substrate).

[0098] The Ta and / or TaN-containing semiconductor substrates to be etched in this method may contain organic and organometallic residues and, in addition, a variety of metal oxides that may also be removed during the etching process. Semiconductor substrates (e.g., wafers) are typically constructed of silicon, silicon germanium, Group III-V compounds such as GaAs, or any combination thereof. The substrates IVIA / t / ZUZZ / UO I44Z semiconductors may also contain exposed integrated circuit structures such as interconnect features (e.g., metal lines and dielectric materials). Metals and metal alloys used for interconnect features include, but are not limited to, aluminum, copper-alloyed aluminum, copper, titanium, tantalum, cobalt, silicon, titanium nitride, tantalum nitride, and tungsten. Semiconductor substrates may also contain layers of interlayer dielectrics, silicon oxide, silicon nitride, silicon carbide, titanium oxide, and carbon-doped silicon oxides.

[0099] A semiconductor substrate may be contacted with the etching composition by any suitable method, such as placing the etching composition in a tank and dipping and / or immersing the semiconductor substrate in the etching composition, spraying the etching composition onto the semiconductor substrate, broadcasting the etching composition onto the semiconductor substrate, or any combination thereof. III. Photoresist stripper

[0100] The present disclosure further provides photoresist stripper formulations. A semiconductor integrated circuit and a device circuit of a liquid crystal panel have very fine structures. IVIA / t / ZUZZ / UO I44Z Thin circuits are generally fabricated by uniformly coating a photoresist onto an insulating film or a conductive metal film (such as an oxide film or an Al alloy film, respectively), coating a substrate and exposing and developing the photoresist to form a certain pattern, and etching the metal film or insulating film using the patterned photoresist as a mask and then removing the unnecessary photoresist.

[0101] A photoresist etchant formulation is used to remove photoresist from a substrate. Generally, the photoresist etchant formulation should have high etching strength at both low and high temperatures, and should not leave residue on the substrate. Furthermore, a desirable etchant should not corrode a metal film, while causing little danger to both humans and the environment considering the large amount of etchant composition used in the manufacture of a large-scale liquid crystal display panel circuit.

[0102] The present disclosure provides a photoresist etchant formulation suitable for both the single wafer treatment method and the immersion method for etching photoresist, in particular IVIA / t / ZUZZ / UO I44Z a formulation that leaves no impurities on the substrate, even when applying the single-wafer treatment method that uses an air knife process to remove the photoresist.

[0103] The present disclosure further provides a photoresist stripping composition that has good stripping strength against various types of films coating the substrate and prevents the formation of impurity particles when cleaning bare glass.

[0104] In order to be suitable for both the single wafer treatment photoresist stripping process using high air pressure (air knife) and the immersion process, it is essential that the photoresist stripping formulation has good stripping strength and is non-corrosive and does not form impurity particles on the substrate.

[0105] To effectively prevent any impurities on the substrate, the etchant formulation should be easily absorbed by various LCD layers, such as an indium tin oxide (ITO) film, an aluminum, chromium, silicon nitride film, and an amorphous silicon film. In addition, the etchant formulation should show a uniformly low surface tension with the LCD layers. In addition, it should have a low volatility and viscosity. In addition, the contact angle between the surface of the LCD layers IVIA / t / ZUZZ / UO I44Z and the stripping formulation falling onto the surface must be small and kept constant.

[0106] Furthermore, it is desirable that the etchant formulation exhibit uniform physical characteristics against various types of LCD layers and that the etchant formulation can prevent the formation of impurity particles on a bare glass when tested for the existence of particles within LCD manufacturing facilities.

[0107] The photoresist stripping formulation of the present disclosure includes an alkanolamine, a sulfoxide or sulfone compound, a glycol ether, and one or more surfactants selected from one or more classes of surfactants. 1. Alkanolamine

[0108] Alkanolamine removes photoresist from the substrate. Suitable alkanolamines include monoisopropanolamine and monoethanolamine.

[0109] The alkalonamine is present in the photoresist stripper formulation in an amount of about 5% by weight or greater, about 6% by weight or greater, about 7% by weight or greater, about 8% by weight or greater, about 9% by weight or greater, or about 10% by weight or less, about 11% by weight or less, about 12% by weight or less, about 13% by weight or less, IVIA / t / ZUZZ / UO I44Z about 14% by weight or less, about 15% by weight or less, or within any range using these endpoints. 2. Sulfoxide or sulfone

[0110] The sulfoxide or sulfone compound is provided as a solvent that dissolves the photoresist and controls the surface tension between the etchant composition and the LCD layers. Suitable compounds include diethylsulfoxide, dimethylsulfoxide, diethylsulfone, or dimethylsulfone.

[0111] The sulfoxide or sulfone compound may be included in the photoresist stripper formulation in an amount of about 35% by weight or greater, about 40% by weight or greater, or about 45% by weight or less, about 50% by weight or less, about 55% by weight or less, or within any range using these endpoints. 3. Glycol ether

[0112] Glycol ether serves, in combination with the aforementioned sulfoxide or sulfone compound, to dissolve the photoresist and control the surface tension between the compound and the LCD layers to improve the air knife photoresist stripping capabilities much more than the composition consisting of dimethyl sulfoxide monoethanolamine. Although dimethyl sulfoxide by itself serves to improve air knife photoresist removal capabilities, its combination with monoethanolamine greatly reduces air knife photoresist stripping capabilities. However, the addition of glycol ether to the composite consisting of dimethyl sulfoxide and monoethanolamine increases both the air knife photoresist stripping capability and the photoresist stripping strength of the composite.

[0113] Suitable glycol ether compounds include ethyl diglycol, methyl diglycol or butidiglycol.

[0114] The glycol ether may be included in the photoresist stripper formulation in an amount of about 35% by weight or greater, about 40% by weight or greater, or about 45% by weight or less, about 50% by weight or less, about 55% by weight or less, or within any range using these endpoints. 4. Surfactant

[0115] One or more surfactants may be included in the photoresist stripping formulations. The surfactants may prevent the creation and residue of impurity particles on the substrate while rinsing the bare glass. Surfactants suitable for use in the photoresist stripping formulations of the present invention IVIA / t / ZUZZ / UO I44Z description includes one or more surfactants and / or co-surfactants of Formula I, MA / t / ZUZZ / UO I44Z Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1g alkyl, wherein the C1-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Cs alkyl, wherein the Ci-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide;

[0116] In particular, suitable surfactants may include one or more of any of Surfactants 1-5 described herein.

[0117] The photoresist stripper formulations may include one or more surfactants in an amount of about 0.05% by weight or greater, about 0.1% by weight or greater, about 0.2% by weight or greater, or about 0.3% by weight or less, about 0.4% by weight or less, about 0.5% by weight or less, or within any range using these endpoints. 5. Other additives The photoresist stripper formulations of the present disclosure may further include tetramethylammonium hydroxide in an amount of about 1% by weight or greater, about 2% by weight or greater, about 3% by weight or greater, about 4% by weight or greater, about 5% by weight or greater, or about 6% by weight or less, about 7% by weight or less, about 8% by weight or less, about 9% by weight or less, about 10% by weight or less, or within any range using these endpoints.

[0118] The photoresist stripper formulation may also include benzenediol in an amount of about 3% by weight or greater, about 4% by weight, IVIA / t / ZUZZ / UO I44Z wt. % or greater, about 5 wt. % or greater, about 6 wt. % or greater, about 7 wt. % or greater, about 8 wt. % or greater, about 9 wt. % or greater, or about 10 wt. % or less, about 11 wt. % or less, about 12 wt. % or less, about 13 wt. % or less, about 14 wt. % or less, about 15 wt. % or less, or within any range using these endpoints.

[0119] The photoresist stripper formulation may also include an alkylsulfonic acid in an amount of about 1 wt % or greater, about 2 wt % or greater, about 3 wt % or greater, about 4 wt % or greater, about 5 wt % or greater, about 6 wt % or greater, about 7 wt % or greater, about 8 wt % or greater, about 9 wt % or greater, or about 10 wt % or less, about 11 wt % or less, about 12 wt % or less, about 13 wt % or less, about 14 wt % or less, about 15 wt % or less, or within any range using these endpoints. VI. Surfactants

[0120] The present disclosure provides surfactants for use in agricultural products in the form of amino acid derivatives. The amino acids may be naturally occurring or synthetic, or may be obtained from ring-opening reactions of lactams, such as caprolactam. The compounds of the present invention have been shown to have surface-active properties and may be used as surfactants and wetting agents, for example. In particular, the present disclosure provides compounds of Formula I, Wk R2O Formula I wherein R and R may be the same or different, and may be selected from the group consisting of hydrogen and C1-C2 alkyl, wherein the C1-C2 alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is optionally further substituted with R, wherein R is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C2 alkyl, wherein the C1-C2 alkyl may be optionally substituted with one or more substituents selected from the group consisting of ML / t / ZUZZ / UO I44Z of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide.

[0121] A specific compound provided by the present disclosure is 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide (Surfacent 1), which has the following formula: IVIA / t / ZUZZ / UO I44Z

[0122] A second specific compound provided by the present disclosure is dodecyl 6-(dimethylamino)hexanoate N-oxide (Surfactant 2), which has the following formula:

[0123] In the above structure, the notation N—>0 is proposed to convey a non-ionic bonding interaction between nitrogen and oxygen.

[0124] A third specific compound provided by the present disclosure is 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-l-aminium chloride (Surfaceant 3), which has the following formula: IVIA / t / ZUZZ / UO I44Z

[0125] A fourth specific compound provided by the present disclosure is 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-l-sulfonate (Surfaceant 4), which has the following formula: EITHER

[0126] A fifth specific compound provided by the present disclosure is 6-(dodecyloxy)-6-oxohexane-l-aminium chloride (Surfactant 5), which has the following formula: HO Cl

[0127] These surfactants can be synthesized by several methods. One such method includes opening a lactam to provide an amino acid having an N-terminus and C-terminus. The N-terminus can be reacted with one or more alkylating agents and / or an acid to provide a quaternary ammonium salt. Alternatively, the N-terminus can be reacted with an oxidizing agent to provide an amine N-oxide. The C-terminus can be reacted with an alcohol in the presence of an acid to provide an ester.

[0128] The amino acid may be naturally occurring or synthetic or may be derived from a ring-opening reaction of a lactam, such as caprolactam. The ring-opening reaction may be an acid- or alkali-catalyzed reaction, and an example of an acid-catalyzed reaction is shown below in Reaction Scheme 1. REACTION SCHEME 1 EITHER 0NH H2SO4jl ?__2H2°2

[0129] The amino acid may have as few as 1 or as many as 12 carbons between the N- and C-termini. The alkyl chain may be branched or straight. The alkyl chain may be interrupted with nitrogen, oxygen, or sulfur. The alkyl chain may be further substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carboxyl, and carboxylate. The N-terminal nitrogen may be acylated or alkylated with one or more alkyl groups. For example, the amino acid may be 6-(dimethylamino)hexanoic acid.

[0130] Surfactant 1 can be synthesized as shown below in Reaction Scheme 2. As IVIA / t / ZUZZ / UO I44Z sample, 6-aminohexanoic acid is treated with IVIA / t / ZUZZ / UO I44Z formaldehyde in refluxing formic acid to give 6-(dimethylamino)hexanoic acid. The free carboxylic acid is then treated with an alcohol, such as dodecanol, in the presence of p-toluenesulfonic acid (PTSA) in toluene to give the corresponding ester, dodecyl 6-(dimethylamino)hexanoate. The N-terminus is then alkylated with methyl iodide in the presence of sodium carbonate. REACTION SCHEME 2 I0PTSA I zn-0\0zUh to|uen° I® Mel, Na2CO3,1O --------- 0® 11 CH3CN / N\z00%o00000 / 00

[0131] Surfactant 2 can be synthesized as shown below in Reaction Scheme 3. As shown, 6-aminohexanoic acid is treated with formaldehyde in refluxing formic acid to give (dimethylamino)hexanoic acid 6-15. The free carboxylic acid is then treated with an alcohol, such as dodecanol, in the presence of p-toluenesulfonic acid (PTSA) in toluene to give the corresponding ester, dodecyl 6-(dimethylamino)hexanoate. The N-terminus is then oxidized with hydrogen peroxide to give the amine oxide. IVIA / t / ZUZZ / UO I44Z REACTION SCHEME 3 oo I ° + PTSA Λ A toluene / xoh io EITHER

[0132] Surfactant 3 can be synthesized as shown below in Reaction Scheme 4. As shown, 6-aminohexanoic acid is treated with formaldehyde in refluxing formic acid to give 6-(dimethylamino)hexanoic acid. The free carboxylic acid is then treated with an alcohol, such as dodecanol, in the presence of p-toluenesulfonic acid (PTSA) in toluene to give the corresponding ester, dodecyl 6-(dimethylamino)hexanoate. The N-terminus is then alkylated with methyl iodide in the presence of sodium carbonate. 4 REACTION SCHEME 4 IVIA / t / ZUZZ / UO I44Z

[0133] Surfactant 4 can be synthesized as shown below in Reaction Scheme 5. As shown, 6-aminohexanoic acid is treated with formaldehyde in refluxing formic acid to give 6-(dimethylamino)hexanoic acid. The free carboxylic acid is then treated with an alcohol, such as dodecanol, in the presence of p-toluenesulfonic acid (PTSA) in toluene to give the corresponding ester, dodecyl 6-(dimethylamino)hexanoate. The N-terminus is then treated with 1,4-butanesulfone in refluxing ethyl acetate to give the desired sulfonate. REACTION SCHEME 5 reflux

[0134] Surfactant 5 can be synthesized as shown below in Reaction Scheme 6. As shown, 6-aminohexanoic acid is reacted with an alcohol, in the presence of p-toluenesulfonic acid (PTSA) in toluene to give the corresponding ester, dodecyl 6-aminohexanoate. The N-terminus is protonated with hydrochloric acid to give the desired hydrochloride salt. REACTION SCHEME 6 PTSA toluene HCI H2O

[0135] The compounds of the present disclosure demonstrate surface-active properties. These properties can be measured and described by several methods. One method by which surfactants can be described is by the molecule's critical micelle concentration (CMC). The CMC can be defined as the concentration of a surfactant at which micelles form, and above which all additional surfactant is incorporated into the micelles.

[0136] As the surfactant concentration increases, the surface tension decreases. Once the surface is completely covered with surfactant molecules, micelles begin to form. This point represents the CMC as well as the minimum surface tension. Further addition of surfactant will not further affect the surface tension. Therefore, the CMC can be measured by observing the change in surface tension as a function of surfactant concentration. One such method for measuring this value is the Wilhelmy plate method. A Wilhelmy plate is typically a thin iridioplatinum plate attached to a balance by a wire and positioned perpendicular to the air-liquid interface. The balance is used to measure the force exerted on the plate upon wetting. This value is then used to calculate the surface tension (y) according to Equation 1: Equation 1: γ = F / l cos Θ where 1 equals the wetted perimeter (2w + 2d, where wyd are the thickness and width of the plate, respectively) and cos Θ, the contact angle between the liquid and the plate, is assumed to be 0 in the absence of a value from the existing literature.

[0137] Another parameter used to evaluate the performance of surfactants is the dynamic surface tension. Dynamic surface tension is the value of surface tension for a particular surface or interface age. In the case of liquids with added surfactants, this may differ from the equilibrium value. Immediately after a surface is produced, the surface tension is equal to that of the pure liquid. As described above, surfactants reduce the surface tension; therefore, the surface tension drops until an equilibrium value is reached. The time required to reach equilibrium depends on the diffusion rate and the adsorption rate of the surfactant.

[0138] One method by which dynamic surface tension is measured is based on a bubble pressure tensiometer. This apparatus measures the maximum internal pressure of a gas bubble that forms in a liquid by means of a capillary. The measured value corresponds to the surface tension at a given surface age, the time from the start of bubble formation to the IVIA / t / ZUZZ / UO I44Z appearance of the pressure maximum. The dependence of surface tension on surface age can be measured by varying the rate at which bubbles are produced.

[0139] Surface-active compounds can also be evaluated by their wetting ability on solid substrates as measured by the contact angle. When a liquid droplet comes into contact with a solid surface in a third medium, such as air, a three-phase line is formed between the liquid, the gas, and the solid. The angle between the unit surface tension vector, acting on the three-phase line and tangent to the liquid droplet, and the surface is described as the contact angle. The contact angle (also known as the wetting angle) is a measure of the wettability of a solid by a liquid. In the case of complete wetting, the liquid is completely partitioned over the solid and the contact angle is 0°.Wetting properties are usually measured for a given compound at a concentration of l-100x CMC, however, it is not a concentration-dependent property, therefore, wetting property measurements can be measured at concentrations that are higher or lower.

[0140] In one method, an optical contact angle goniometer can be used to measure the contact angle. This device uses a digital camera and software to extract the contact angle by analyzing the contour shape of a sessile drop of liquid on a surface.

[0141] Potential applications for the surfactant compounds of the present disclosure include formulations for use as shampoos, hair conditioners, detergents, non-staining rinse solutions, floor and carpet cleaners, cleaning agents for graffiti removal, wetting agents for crop protection, crop protection adjuvants, and wetting agents for spray coatings.

[0142] It will be understood by one skilled in the art that small differences between compounds can lead to substantially different surfactant properties, so that different compounds can be used with different substrates, in different applications.

[0143] The following non-limiting embodiments are provided to demonstrate the different properties of the different surfactants. In Table 1 below, the abbreviated names of the surfactants are correlated with their corresponding chemical structures. ML / t / ZUZZ / UO I44Z M Λ / t / ZUZZ / UO Ι44Ζ TABLE 1 Surfactant Formula and Name Surfactant 1 ' ιθ 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-1-aminium iodide Surfactant 2 io 0 N-dodecyl 6-(dimethylamino)hexanoate oxide Surfactant 3 H © 0 Cl chloride 6-(dodecyloxy)-N,N-dimethyl-6- oxohexan-1-aminium Surfactant 4 O 4-( (6-(Dodecyloxy)-6- oxohexyl)dimethylammonio)butan-l-sulfonate Surfactant 5 H i© II H © 0 Cl 6-(dodecyloxy)-6-oxohexan-l-aminium chloride

[0144] Each of the five compounds is effective as a surfactant, useful for wetting or foaming agents, dispersants, emulsifiers and detergents, among other applications.

[0145] Surfactant 1, Surfactant 3, and Surfactant 5 are cationic. These surfactants are useful both in the applications described above and in some other specialty applications such as surface treatments, as in agricultural hair products, and can also be used to generate water-repellent surfaces.

[0146] Surfactant 4 is non-ionic and can be used in shampoos, detergents, hard surface cleaners and a variety of other surface cleaning formulations.

[0147] Surfactant 5 is zwitterionic. These surfactants are useful as co-surfactants in all the applications described above. EXAMPLES

[0148] Nuclear magnetic resonance (NMR) spectroscopy was performed on a Bruker 500 MHz spectrometer. The critical micelle concentration (CMC) was determined by the Wilhelmy plate method at 23 °C using a tensiometer (DCAT 11, DataPhysics Instruments GmbH) equipped with a Pt-Ir plate. Dynamic surface tension was determined by adding methyl iodide (0.57 mL, 9.16 mmol), and the reaction mixture was heated at 40 °C for 24 h, then cooled to room temperature. The mixture was filtered and concentrated to give 6-(dodecyloxy)-N,N,N-trimethyl-6oxohexan-l-aminium iodide as a yellow solid in 92% yield. 9H), 2.34 (t, J = 7.4 Hz, 2H), 1.70 1.63 (m, 2H), 1.62 - 1.46 (m, 4H), 1.31 - 1.20 (m, 20H), 0.86 (t, J = 6.9 Hz, 3H). Example Ib: Determination of the critical micelle concentration (CMC) of Surfactant 1

[0151] The critical micelle concentration (CMC) was tested. From the change in surface tension with concentration in water, the CMC was determined to be approximately 1 mmol. The minimum surface tension plateau value that can be achieved by this surfactant is approximately 33 mN / m, i.e. 33 mN / m + 3.3 mN / m. Figure 1 is a graph of these results, showing surface tension versus concentration. From the graph, the surface tension is approximately 34 mN / m at the CMC and it is approximately 33.8 mN / m at a concentration of 1.0 mmol or higher. Example 1c: Determination of the dynamic surface tension of Surfactant 1

[0152] Dynamic surface tension was determined using a bubble pressure tensiometer which measures the change in surface tension of a newly created air-water interface over time. Figure 2 presents a graph of the results as surface tension versus time, showing the surface tension in the time interval between 1 ms and 75 ms rapidly dropping from about 55.5 mN / m to about 39.9 mN / m. In the time interval between 75 ms and 50,410 ms, the surface tension slowly drops from about 39.9 mN / m to about 34 mN / m, asymptotically approaching the saturation value of the surface tension at the CMC. Example Id: Determination of the wetting properties of Surfactant 1

[0153] In addition to surface tension and surface dynamics, the wetting properties of the compound were tested on various surfaces. For example, hydrophobic substrates such as HD-polyethylene exhibit surface wetting with a contact angle of 32°. On oleophobic and hydrophobic substrates such as Teflon, the contact angle IVIA / t / ZUZZ / UO I44Z measured contact was much lower than that of water, 67.1° (Table 2). TABLE 2 Substrate AC of Surfactant (°) AC concentration of water (°) Teflon 67.1 lOx CMC 119 Polyethylene-HD 32 lOx CMC 93.6 Nylon 31.5 lOx CMC 50 Polyethylene terephthalate 38.4 lOx CMC 65.3 Example 2a: Synthesis of dodecyl 6-(dimethylamino)hexanoate N-oxide (Surfactant 2)

[0154] 6-(Dimethylamino)hexanoic acid (11.99 g, 75.36 mmol) was dissolved in toluene (50 mL) in a round-bottom flask equipped with a Dean-Stark trap. Dodecanol (12.68 g, 75.36 mmol) and p-toluenesulfonic acid monohydrate (PTSA) (14.33 g, 75.36 mmol) were then added. The reaction was then heated under reflux for 24 h, until no more water was observed in the Dean-Stark trap. Stark. The solvent was removed under vacuum and the resulting solid was washed with hexanes. The solid was dissolved in dichloromethane (200 mL) and washed with saturated sodium carbonate to give dodecyl 6-(dimethylamino)hexanoate in 51% efficiency. 1.27-1.18 (m, 20H), 0.86 (t, 3H).

[0155] dodecyl 6-(dimethylamino)hexanoate (1.0 g, 3.05 mmol) was dissolved in distilled water (80 mL). Hydrogen peroxide (50% solution, 1.04 g, 30.5 mmol) was added. The reaction was heated at reflux for 12 hours, then the solvent was removed under vacuum. The resulting solid was washed with acetone to give the desired N-oxide in 90% yield.ΧΗ NMR (500 MHz, DMSO) δ 4.00 (t, J = 6.6 Hz, 2H), 3.30 - 3.26 (m, 2H), 3.18 (s, 6H), 2.31 (t, J= 7.4 Hz, 2H) , 1.76 - 1.73 (m, 2H) , 1.54 - 1.57 (m, 4H) , 1.30 - 1.24 (m, 22H) , 0.86 (t, J= 6.9 Hz, 3H) . Example 2b: Determination of the critical micelle concentration (CMC) of Surfactant 2

[0156] The critical micelle concentration (CMC) was tested. From the change in surface tension with concentration in water, the CMC was determined to be approximately 0.08 mmol. The minimum surface tension plateau value that can be achieved by this surfactant is approximately 28 mN / m, i.e., 28 mN / m + 2.8 mN / m. Figure 3 is a graph of these results, showing surface tension versus concentration. From the graph of the results, the surface tension at the CMC is equal to or less than approximately 30 mN / m. The graph further shows the surface tension equal to or less than 30 mN / m at a concentration of 0.08 mmol or greater. Example 2c: Determination of the dynamic surface tension of Surfactant 2

[0157] The dynamic surface tension was determined using a bubble pressure tensiometer which measures the change in surface tension of a freshly created air-water interface over time. Figure 4 presents a graph of surface tension versus time, showing that the composite fully saturates the surface in approximately 7.6 seconds. As can be seen from the graph, the dynamic surface tension is equal to or less than 40 mN / m at a surface aging time of 4900 ms or greater. Example 2d: Determination of the wetting properties of Surfactant 2

[0158] In addition to surface tension and surface dynamics, the wetting properties of the compound were tested on various surfaces. For example, hydrophobic substrates such as HD-polyethylene exhibit surface wetting with a contact angle of 39.3°, much lower than that of water. On oleophobic substrates and IVIA / t / ZUZZ / UO I44Z hydrophobics such as Teflon, the measured contact angle was much lower than that of water, 57.4° (Table 3). TABLE 3 Substrate AC of Surfactant (°) AC concentration of water (°) Teflon 57.4 lOx CMC 119 Polyethylene-HD 39.3 lOx CMC 93.6 Nylon 21.7 lOx CMC 50 Polyethylene terephthalate 24.5 lOx CMC 65.3 Example 3a: Synthesis of 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan1-aminium chloride (Surfactant 3)

[0159] 6-(Dimethylamino)hexanoic acid (11.99 g, 75.36 mmol) was dissolved in toluene (50 mL) in a round-bottom flask equipped with a Dean-Stark trap. Dodecanol (12.68 g, 75.36 mmol) and p-toluenesulfonic acid monohydrate (PTSA) (14.33 g, 75.36 mmol) were then added. The reaction was then heated under reflux for 24 h, until no more water was observed in the Dean-Stark trap. Stark. The solvent was removed under vacuum and the resulting solid was washed with hexanes. The solid was dissolved in dichloromethane (200 mL) and washed with saturated sodium carbonate to give dodecyl 6-(dimethylamino)hexanoate in 51% yield. 1H NMR (DMSO) δ 4.00 (t, J = 6.5 Hz, 2H), 2.27 (t, J = 7.3 Hz, 2H), 2.13-2.16 (m, 2H), 2.01 (s, 6H), 1.54 - 1.53 (m, 6H), 1.27-1.18 (m, 20H), 0.86 (t, 3H).

[0160] dodecyl 6-(dimethylamino)hexanoate (100 mg, 0.305 mmol) was dissolved in water (10 mL). Concentrated hydrochloric acid (11.14 mg, 0.305 mmol) was added. Example 3b: Determination of the critical micelle concentration (CMC) of Surfactant 3

[0161] The critical micelle concentration (CMC) was tested. From the change in surface tension with concentration in water, the CMC was determined to be approximately 1.4 mmol. The minimum surface tension plateau value that can be achieved by this surfactant is approximately 30 mN / m, i.e., 30 mN / m + 3 mN / m. Figure 5 is a graph of these results, showing surface tension versus concentration. From the graph of the results, the surface tension at the CMC is equal to or less than approximately 30 mN / m. The graph further shows the surface tension to be equal to or less than 33 mN / m at a concentration of 2.7 mmol or greater. Example 3c: Determination of the dynamic surface tension of Surfactant 3

[0162] The dynamic surface tension was determined with a bubble pressure tensiometer which measures the ML / t / ZUZZ / UO I44Z Surface tension change of a newly created air-water interface with time. Figure 6 presents a plot of surface tension against time, showing the surface tension in the time interval between 1 and 100 ms rapidly dropping from approximately 50 mN / m to approximately 40 mN / m. In the time interval from 100 to 50,000 ms, the surface tension slowly drops from 40 mN / m to approximately 34 mN / m, asymptotically approaching the saturation value of the surface tension at the CMC. Example 3d: Determination of the wetting properties of Surfactant 3

[0163] In addition to surface tension and surface dynamics, the wetting properties of the compound were tested on various surfaces. For example, hydrophobic substrates such as HD-polyethylene exhibit surface wetting with a contact angle of 42.5°. On oleophobic and hydrophobic substrates such as Teflon, the measured contact angle was much lower than that of water, 66.6° (Table 4). MA / t / ZUZZ / UO I44Z MA / t / ZUZZ / UO I44Z TABLE 4 Substrate AC of Surfactant (°) AC concentration of water (°) Teflon 66.6 lOx CMC 119 Polyethylene-HD 42.5 lOx CMC 93.6 Nylon 15 lOx CMC 50 Polyethylene terephthalate 18.3 lOx CMC 65.3 Example 4a: Synthesis of 4-((6-(dodecyloxy)-65 oxohexyl)dimethylammonium)butan-l-sulfonate (Surfactant 4)

[0164] 6-(Dimethylamino)hexanoic acid (11.99 g, 75.36 mmol) was dissolved in toluene (50 mL) in a round-bottom flask equipped with a Dean-Stark trap. Dodecanol (12.68 g, 75.36 mmol) and p-toluenesulfonic acid monohydrate (PTSA) (14.33 g, 75.36 mmol) were then added. The reaction was then heated at reflux for 24 h, until no more water was observed in the Dean-Stark trap. The solvent was removed under vacuum and the resulting solid was washed with hexanes. The solid was dissolved in dichloromethane (200 mL) and washed with saturated sodium carbonate to give dodecyl 6-(dimethylamino)hexanoate in 51% yield. 1H NMR (DMSO) δ 4.00 (t, J = 6.5 Hz, 2H), 2.27 (t, J = 7.3 Hz, 2H), 2.13-2.16 (m, 2H), 2.01 (s, 6H), 1.54 - 1.53 (m, 6H), 1.27-1.18 (m, 20H), 0.86 (t, 3H).

[0165] dodecyl 6-(dimethylamino)hexanoate (1.0 g, 3.05 mmol) was dissolved in ethyl acetate (30 mL). 1,4-Butanesultone (0.62 g, 4.57 mmol) was then added, and the mixture was heated under reflux for 12 hours. The reaction was cooled to room temperature, and the solvent was removed under vacuum. 1H NMR (DMSO) δ 4.00 (t, J = 6.7 Hz, 2H), 3.29 - 3.15 (m, 4H), 2.97 (s, 6H), 2.47 (t, J = 7.4 Hz, 2H), 2.33 (t, J = 7.4 Hz, 2H), 1.81 - 1.70 (m, 2H), 1.66 - 1.55 (m, 6H), 1.32 - 1.23 (m, 20H), 0.86 (t, J = 6.9 Hz, 3H). Example 4b: Determination of the critical micelle concentration (CMC) of Surfactant 4

[0166] The critical micelle concentration (CMC) was tested. From the change in surface tension with concentration in water, the CMC was determined to be approximately 0.1 mmol. The minimum surface tension plateau value that can be achieved by this surfactant is approximately 38 mN / m, i.e., 38 mN / m + 3.8 mN / m. Figure 7 is a graph of these results, showing surface tension versus concentration. From the graph of the results, the surface tension at the CMC is approximately 38 mN / m, and the surface tension is equal to or less than 37 mN / m at a concentration of 1 mmol or IVIA / t / ZUZZ / UO I44Z major. Example 4c: Determination of the dynamic surface tension of Surfactant 4

[0167] The dynamic surface tension was determined using a bubble pressure tensiometer which measures the change in surface tension of a freshly created air-water interface over time. Figure 8 presents a graph of surface tension versus time, showing that the composite fully saturates the surface in approximately 1 second. From the graph, the dynamic surface tension is equal to or less than 40.5 mN / m at surface aging of 4000 ms or greater. Example 4d: Determination of the wetting properties of Surfactant 4

[0168] In addition to surface tension and surface dynamics, the wetting properties of the compound were tested on various surfaces. For example, hydrophobic substrates such as HD-polyethylene exhibit surface wetting with a contact angle of 46.5°. On oleophobic and hydrophobic substrates such as Teflon, the measured contact angle was much lower than that of water, 62.7° (Table 5). MA / t / ZUZZ / UO I44Z TABLE 5 Substrate AC of Surfactant (°) AC concentration of water (°) Teflon 62.7 lOx CMC 119 Polyethylene-HD 46.5 lOx CMC 93.6 Nylon 25.7 lOx CMC 50 Polyethylene terephthalate 35.6 lOx CMC 65.3 Example 5a: Synthesis of 6-(dodecyloxy)-6-oxohexan-l-amino chloride 5 (Surfactant 5)

[0169] 6-Aminohexanoic acid (5.0 g, 38.11 mmol) was dissolved in toluene (50 mL) in a round-bottom flask equipped with a Dean-Stark trap. Dodecanol (6.41 g, 38.11 mmol) and p10-toluenesulfonic acid monohydrate (PTSA) (7.24 g, 38.11 mmol) were then added. The reaction was then heated at reflux for 24 h, until no more water was observed in the Dean-Stark trap. The solvent was removed under vacuum and the resulting solid was washed with hexanes. The solid was dissolved in dichloromethane (200 mL) and washed with saturated sodium carbonate to give dodecyl 6-aminohexanoate in 40% yield.

[0170] Dodecyl 6-aminohexanoate (100 mg, 0.363 mmol) was dissolved in water (10 mL). Concentrated hydrochloric acid (13.23 mg, 0.363 mmol) was then added. Example 5b: Determination of the critical micelle concentration (CMC) of Surfactant 5

[0171] The critical micelle concentration (CMC) was tested. From the change in surface tension with concentration in water, the CMC was determined to be approximately 0.75 mmol. The minimum surface tension plateau value that can be achieved by this surfactant is approximately 23 mN / m, i.e., 23 mN / m + 2.3 mN / m. Figure 9 is a graph of these results, showing surface tension versus concentration. From the graph of the results, the surface tension at the CMC is approximately 23 mN / m, and the surface tension is equal to or less than 23.2 mN / m at a concentration of 0.7 mmol or greater. Example 5c: Determination of the dynamic surface tension of Surfactant 5

[0172] The dynamic surface tension was determined using a bubble pressure tensiometer which measures the change in surface tension of a freshly created air-water interface over time. Figure 10 shows a graph of the results with surface tension versus time, which shows that the composite fully saturates the surface in approximately 1.5 seconds. From the graph, the dynamic surface tension is equal to or less than 28.5 mN / m at a surface aging of 3185 ms or greater. Example 5d: Determination of the wetting properties of Surfactant 5

[0173] In addition to surface tension and surface dynamics, the wetting properties of the compound were tested on various surfaces. For example, hydrophobic substrates such as HD-polyethylene exhibit surface wetting with a very low contact angle of 16.6°. On oleophobic and hydrophobic substrates such as Teflon, the measured contact angle was much lower than that of water, 39.3° (Table 6). TABLE 6 Substrate AC of Surfactant (°) AC concentration of water (°) Teflon 39.3 lOx CMC 119 Polyethylene-HD 16.6 lOx CMC 93.6 Nylon 18.2 lOx CMC 50 Polyethylene terephthalate 15.3 lOx CMC 65.3 Example 6: Formulation for pre-texturizing agent

[0174] In this Example, a formulation for a pre-texturizing agent is provided, which includes a surfactant, which may be one or more of Surfactants 1-5 described herein. The components of the formulation are shown below in Table 5-7. Table 7 IVIA / t / ZUZZ / UO I44Z Component Function % by weight Surfactant Wetting Agent 0.01-30 Oxalic Acid Cleansing Agent 0.1-30 Water 60-99.89 Example 7: Formulation for etching agent 10

[0175] In this Example, a formulation for use as an etching agent is provided, which includes a surfactant, which may be one or more of Surfactants 1-5 described herein. The 15 components of the formulation are shown below in Table 8. TABLE 8 Component Function % by weight Hydrofluoric acid Etching agent 0.1-5 Surfactant Emulsifier 0.0001-1 Nitric acid Oxidizer 0.01-0.5 Oxalic acid Complexing agent 0.1-10 Water 83.5-99.9 Example 8: Formulation for photoresist stripper

[0176] In this Example, a formulation for use as a photoresist stripper is provided, 5 which includes a surfactant, which may be one or more of Surfactants 1-5 described herein. The components of the formulation are shown below in Table 9. IVIA / t / ZUZZ / UO I44Z TABLE 9 Component Function % by weight Alkanolamine Stripping agent 5-15 Sulfone Solvent agent 35-55 Glycol ether Solvent agent 35-55 Surfactant Cleaning agent 0.05-0.5 ASPECTS

[0177] Aspect 1 is a formulation for a pre-texturizing agent, comprising: at least one surfactant of Formula I, R2O Formula 1 wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1e alkyl, wherein the C1-C1e alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Cs alkyl, wherein the Ci-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and one or more solvents.

[0178] Aspect 2 is the formulation of Aspect 1, further comprising one or more acids.

[0179] Aspect 3 is the formulation of either Aspect 1 or Aspect 2, further comprising one or more bases.

[0180] Aspect 4 is the formulation of any of Aspects 1-3, further comprising one or more chelating agents.

[0181] Aspect 5 is the formulation according to any of Aspects 1-4, wherein the surfactant is 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-laminium iodide, having the following formula: IVIA / t / ZUZZ / UO I44Z

[0182] Aspect 6 is the formulation according to any of Aspects 1-4, wherein the surfactant is dodecyl 6-(dimethylamino)hexanoate N-oxide, having the following formula:

[0183] Aspect 7 is the formulation according to any of Aspects 1-4, wherein the surfactant is 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-l-aminium chloride, having the following formula: HO Cl

[0184] Aspect 8 is the formulation according to any of Aspects 1-4, wherein the surfactant is 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-1-sulfonate, having the following formula: EITHER

[0185] Aspect 9 is the formulation according to any of Aspects 1-4, wherein the surfactant is 6-(dodecyloxy)-6-oxohexane-l-aminium chloride, having the following formula: IVIA / t / ZUZZ / UO I44Z

[0186] Aspect 10 is a formulation for a pre-texturizing agent, comprising: at least one surfactant of Formula I, Wk R2O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1g alkyl, wherein the C1-C1g alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and one or more antifoam agents.

[0187] Aspect 11 is the formulation of Aspect 10, further comprising one or more acids.

[0188] Aspect 12 is the formulation of either Aspect 10 or Aspect 11, further comprising one or more bases.

[0189] Aspect 13 is the formulation of any of Aspects 10-12, further comprising one or more chelating agents.

[0190] Aspect 14 is the formulation of any of Aspects 10-13, further comprising one or more solvents.

[0191] Aspect 15 is the formulation according to any of Aspects 10-14, wherein the surfactant is 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: IVIA / t / ZUZZ / UO I44Z

[0192] Aspect 16 is the formulation according to any of Aspects 10-14, wherein the surfactant is dodecyl 6-(dimethylamino)hexanoate N-oxide, having the following formula: IVIA / t / ZUZZ / UO I44Z

[0193] Aspect 17 is the formulation according to any of Aspects 10-14, wherein the surfactant is 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-l-aminium chloride, having the following formula:

[0194] Aspect 18 is the formulation according to any of Aspects 10-14, wherein the surfactant is 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-l-sulfonate, having the following formula: EITHER

[0195] Aspect 19 is the formulation according to any of Aspects 10-14, wherein the surfactant is 6-(dodecyloxy)-6-oxohexane-l-amino chloride, having the following formula: ML / t / ZUZZ / UO I44Z

[0196] Aspect 20 is a formulation for an etching agent, comprising: at least one surfactant of Formula I, R2O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1g alkyl, wherein the C1-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Cs alkyl, wherein the Ci-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with κ c KN the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and hydrofluoric acid (HF).;

[0197] Aspect 21 is the formulation of Aspect 20, further comprising one or more oxidizing agents.

[0198] Aspect 22 is the formulation of either Aspect 20 or Aspect 21, which further comprises one or more complexing agents.

[0199] Aspect 23 is the formulation according to any of Aspects 20-22 wherein the surfactant is 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-laminium iodide, having the following formula:

[0200] Aspect 24 is the formulation according to any of Aspects 20-22, wherein the surfactant is dodecyl 6-(dimethylamino)hexanoate N-oxide, having the following formula:

[0201] Aspect 25 is the formulation according to any of Aspects 20-22, wherein the surfactant is 6-(dodecyloxy)-N,N-drmethyl-696 oxohexan-l-aminium chloride, having the following formula: MA / t / ZUZZ / UO I44Z

[0202] Aspect 26 is the formulation according to any of Aspects 20-22, wherein the surfactant is 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-l-sulfonate, having the following formula: EITHER

[0203] Aspect 27 is the formulation according to any of Aspects 20-22, wherein the surfactant is 6-(dodecyloxy)-6-oxohexane-laminium chloride, having the following formula:

[0204] Aspect 28 is a formulation for a photoresist stripper formulation, comprising: at least one surfactant of Formula I, R2O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1g alkyl, wherein the C1-C1g alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and an alkanolamine.

[0205] Aspect 29 is the formulation of Aspect 28, which also includes a sulfoxide.

[0206] Aspect 30 is the formulation of Aspect 28, which also includes a sulfone.

[0207] Aspect 31 is the formulation of any of Aspects 28-30, further comprising a glycol ether.

[0208] Aspect 32 is the formulation of conformity IVIA / t / ZUZZ / UO I44Z with any of Aspects 28-31, wherein the surfactant is 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: ML / t / ZUZZ / UO I44Z

[0209] Aspect 33 is the formulation according to any of Aspects 28-31, wherein the surfactant is dodecyl 6-(dimethylamino)hexanoate N-oxide, having the following formula:

[0210] Aspect 34 is the formulation according to any of Aspects 28-31, wherein the surfactant is 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-l-aminium chloride, having the following formula: HO Cl

[0211] Aspect 35 is the formulation according to any of Aspects 28-31, wherein the surfactant is 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-l-sulfonate, having the following formula: IVIA / t / ZUZZ / UO I44Z

[0212] Aspect 36 is the formulation according to any of Aspects 28-31, wherein the surfactant is 6-(dodecyloxy)-6-oxohexane-laminium chloride, having the following formula:

[0213] Aspect 37 is a formulation for a pre-texturizing agent, comprising: at least one surfactant of Formula I, R2O Formula 1 wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and C1-C1e alkyl, wherein the C1-C1e alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (including 2 and 5); m is an integer from 9 to 20 (including 9 and 20); the terminal nitrogen is further optionally substituted with R3 100 wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and C1-C1e alkyl, wherein the C1-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonato, carbonyl, carboxyl, and carboxylate; an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and at least one of one or more solvents and one or more antifoam agents.

[0214] Aspect 38 is the formulation of Aspect 37, further comprising one or more acids.

[0215] Aspect 39 is the formulation of either Aspect 37 or Aspect 38, further comprising one or more bases.

[0216] Aspect 40 is the formulation of any of Aspects 37-39, further comprising one or more chelating agents.

[0217] Aspect 41 is the formulation according to any of Aspects 37-40, wherein the surfactant comprises at least one of 6(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: IVIA / t / ZUZZ / UO I44Z 101 IVIA / t / ZUZZ / UO I44Z Dodecyl 6-(dimethylamino)hexanoate N-oxide, which has the following formula: 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-laminium chloride, which has the following formula: 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-1-sulfonate, which has the following formula: 6-(dodecyloxy)-6-oxohexane-l-aminium chloride, which has the following formula: combinations thereof.

[0218] Aspect 42 is the formulation in accordance with any of Aspects 20-22, wherein the 102 surfactant comprises at least one of 6(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: MA / t / ZUZZ / UO I44Z Dodecyl 6-(dimethylamino)hexanoate N-oxide, which has the following formula: 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-laminium chloride, which has the following formula: 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-1-sulfonate, which has the following formula: Or 6-(dodecyloxy)-6-oxohexane-l-aminium chloride, which has the following formula: 103 combinations of the same.

[0219] Aspect 43 is the formulation according to any of Aspects 28-31, wherein the surfactant comprises at least one of 65-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: Dodecyl 6-(dimethylamino)hexanoate N-oxide, which has the following formula: 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-laminium chloride, which has the following formula: HO Cl 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonio)butan-115 sulfonate, which has the following formula: N Or 6-(dodecyloxy)-6-oxohexan-l-amino chloride, which has the following formula: 104 ΗΘ CI MA / t / ZUZZ / UO I44Z combinations thereof.< / lll>

Claims

1. A formulation for a pre-texturizing agent, comprising: at least one surfactant of Formula I, R2 O IVIA / t / ZUZZ / UO I44Z Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and Ci-Cs alkyl, wherein the Ci-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (inclusive); m is an integer from 9 to 20 (inclusive);the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Cg alkyl, wherein the Ci-Ce alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; 106 an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and at least one of one or more solvents and one or more antifoaming agents.

2. The formulation of claim 1, further comprising one or more acids.

3. The formulation of either Claim 1 or Claim 2, further comprising one or more bases.

4. The formulation of any of Claims 1-3, further comprising one or more chelating agents.

5. The formulation according to any of Claims 1-4, wherein the surfactant comprises at least one of the following: 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: IVIA / t / ZUZZ / UO I44Z; 6-(dimethylamino)hexanoate N-oxide, having the following formula:; 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-laminium chloride, having the following formula: 107 IVIA / t / ZUZZ / UO I44Z; 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonium)butan-1-sulfonate, having the following formula:; or 6-(dodecyloxy)-6-oxohexan-l-aminium chloride, having the following formula: combinations of the same.

6. A formulation for an etching agent, comprising: at least one surfactant of Formula I, wherein R1 and R2 may be the same or different, and R2 may be selected from the group consisting of hydrogen and Ci-Cs alkyl, wherein the Ci-Cs alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (inclusive); m is an integer from 9 to 20 (inclusive); the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Cg alkyl, wherein the Ci-Ce alkyl can be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate;an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and hydrofluoric acid (HF).; 7. The formulation of claim 6, further comprising one or more oxidizing agents.

8. The formulation of either Claim 6 or Claim 7, further comprising one or more complex-forming agents.

9. The formulation according to any of Claims 6-8, wherein the surfactant comprises at least one of the following: 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: 109 IVIA / t / ZUZZ / UO I44Z; 6-(dimethylamino)hexanoate N-oxide, having the following formula: 5; 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-laminium chloride, having the following formula: H Θ Cl; 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonium)butan-1-sulfonate, having the following formula: 6-(dodecyloxy)-6-oxohexan-l-aminium chloride, having the following formula: Hx / Oχ / -X / -XH 1© II H Θ 0 Cl combinations thereof. 15 10. A formulation for a photoresistant paint stripper formulation, comprising: 110 at least one surfactant of Formula I, MA / t / ZUZZ / UO I44Z 0% R2 O Formula I wherein R1 and R2 may be the same or different, and may be selected from the group consisting of hydrogen and Ci-Cg alkyl, wherein the Ci-Cg alkyl may be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; n is an integer from 2 to 5 (inclusive); m is an integer from 9 to 20 (inclusive);the terminal nitrogen is further optionally substituted with R3, wherein R3 is selected from the group consisting of hydrogen, oxygen, hydroxyl, and Ci-Ce alkyl, wherein the Ci-Ce alkyl can be optionally substituted with one or more substituents selected from the group consisting of hydroxyl, amino, amido, sulfonyl, sulfonate, carbonyl, carboxyl, and carboxylate; an optional counterion associated with the compound which, if present, is selected from the group consisting of chloride, bromide, iodide, and hydroxide; and 111 an alkanolamine.

11. The formulation of claim 10, further comprising a sulfoxide.

12. The formulation of claim 10, which further comprises a sulfone.

13. The formulation of any of Claims 10-12, further comprising a glycol ether.

14. The formulation according to any of Claims 10-13, wherein the surfactant comprises less than one of 6-(dodecyloxy)-N,N,N-trimethyl-6-oxohexan-l-aminium iodide, having the following formula: 6-(dimethylamino)hexanoate dodecyl oxide, having the following formula: 6-(dodecyloxy)-N,N-dimethyl-6-oxohexan-l-1 chloride, having the following formula: 4-((6-(dodecyloxy)-6-oxohexyl)dimethylammonium)butan-1112 sulfonate, having the following formula: 6-(dodecyloxy)-6-oxohexan-l-aminium chloride, having the following formula: combinations thereof.