Adhesive tape for semiconductor package manufacturing process and method for manufacturing same

Abstract

The present disclosure relates to an adhesive tape for a semiconductor manufacturing process, the adhesive tape being attached on a lower surface of a semiconductor package on which a plurality of protrusion electrodes are formed. The adhesive tape is configured to include a first base film, a first adhesive layer containing an acrylic-based copolymer, the first adhesive layer being stacked on top of the first base film, a second base film containing a metal material in such a manner as to be deformed and then kept deformed during each process in a manner that corresponds to a topology of the lower surface of the semiconductor package, the second base film being stacked on top of the first adhesive layer, and a second adhesive layer containing silicon having a spiral network structure, the second adhesive layer being on top of the second base film

Description

Adhesive tape for semiconductor package manufacturing process and manufacturing method thereof

[0001] The present invention relates to an adhesive tape for a semiconductor package manufacturing process, and more particularly, to an adhesive tape for a semiconductor package manufacturing process that effectively protects the lower surface of a semiconductor package and a plurality of protruding electrodes formed on the lower surface of the semiconductor package during an EMI (Electro Magnetic Interference) shielding layer forming process of the semiconductor package.

[0002]

[0003] In the past, the PGA (Pin Grid Array) method and the lead frame method were widely used as a method of making terminal contact with the outside in a semiconductor package, but recently the BGA (Ball Grid Array) method is widely used.

[0004] The BGA method uses numerous protruding electrodes, i.e. solder balls, formed on the bottom surface of the semiconductor package to achieve terminal contact with the outside, thereby enabling more signal transmission than the conventional PGA (Pin Grid Array) method or lead frame method.

[0005] Due to these characteristics, the BGA method is being used as the main package type for next-generation high-speed memory, and is expanding the use of CSP (Chip Scale Package), which was limited to portable information and communication devices such as mobile phones and digital cameras, to the computer field such as PCs and workstations.

[0006] Meanwhile, in the mobile field, such as mobile phones, there is a growing need to reduce the size of terminals to enhance their portability, and accordingly, in order to reduce the size of terminals, there is a growing need to reduce the size of PCBs (Printed Circuit Boards), which occupy a relatively large portion of the terminal.

[0007] However, as the size of the PCB decreases, the spacing between the semiconductor elements included in the PCB becomes narrower, which inevitably leads to errors due to electromagnetic interference between the semiconductor elements. In order to suppress this electromagnetic interference between the elements, a method of covering the element with a shielding cap or a technology of forming a shielding metal coating on the outer surface of the element using EMI (Electro Magnetic Interference) sputtering technology are being developed and introduced. Among these, the shielding metal coating technology by sputtering refers to forming a metal thin film for electromagnetic shielding on the outer surface of the semiconductor element, excluding the connection terminal, through a sputtering process.

[0008] In this regard, prior art related to a method for preventing influence on connection terminals during a sputtering process for electromagnetic shielding of a BGA type semiconductor package is disclosed in Korean Patent Publication No. 10-1501735 (Patent Document 1) and Korean Patent Publication No. 10-1662068 (Patent Document 2).

[0009] Patent document 1 relates to an EMI shielding process for a semiconductor package, and comprises a tape attachment step of attaching an edge of a tape to a lower surface of a frame to form a tape on the inner periphery of the frame, a tape cutting step of forming holes in the tape at regular intervals, a semiconductor package adhesive installation step of arranging the lower edge of the semiconductor package on the upper surface of the tape so that bumps formed on the lower surface of the semiconductor package fit into the holes of the tape, and adhesively installing the semiconductor package on the upper surface of the tape at regular intervals, and a coating step of coating the upper surface of the tape and the semiconductor package adhered to the upper surface of the tape by performing a coating operation on the upper surface of the tape, so that coating is performed on five surfaces of the semiconductor package except for the lower surface.

[0010] However, in the case of the technology disclosed in patent document 1, there is a risk of excessive cost incurred in the tape cutting step for forming holes in the tape at regular intervals, and there is a problem of poor deposition of a thin film during shielding metal coating by EMI (Electro Magnetic Interference) sputtering when the semiconductor package is not accurately placed in the hole of the tape during the semiconductor package bonding and installation step.

[0011]

[0012] <Prior Art Literature>

[0013] (Patent Document 1) Korean Patent Publication No. 10-1501735 (Registered on March 5, 2015)

[0014] (Patent Document 2) Korean Patent Publication No. 10-1662068 (registered on September 27, 2016)

[0015]

[0016] In order to solve the above-mentioned problems, the purpose of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process, which has excellent adhesive properties, retention properties, separation properties, and stress properties, and effectively protects the lower surface of a semiconductor package and a plurality of protruding electrodes formed on the lower surface of the semiconductor package during an EMI shielding layer forming process of a semiconductor package having a plurality of protruding electrodes.

[0017] In addition, the purpose of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process, which effectively maintains stress balance in response to the bottom topology of a semiconductor package in which a plurality of protruding electrodes are formed during an EMI shielding layer forming process by including a first base film made of a plastic material or a metal material, and easily secures the stress characteristics required for the adhesive tape for a semiconductor package manufacturing process.

[0018] In addition, an object of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process in which a first adhesive layer includes an acrylic copolymer to have excellent heat resistance at high temperatures, thereby reducing a degassing phenomenon, and appropriately supports shape deformation of a second base film made of a metal material to prevent tearing of the second base film, and at the same time, even if a tear occurs in the second base film, the second base film is well wrapped to effectively protect a plurality of protruding electrodes, and the first adhesive layer has a stronger adhesive strength than the second adhesive layer, so that separation occurs in the second adhesive layer when the adhesive tape is separated from the semiconductor package after the completion of the EMI shielding layer forming process.

[0019] In addition, the purpose of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process, which prevents air bubbles that may occur in a first adhesive layer from being transferred to a second adhesive layer by including a metal material in the second base film, and which has sufficient retention properties so that when attached to the bottom of the semiconductor package, the shape is transformed to correspond to the topology of the bottom of the semiconductor package and then the transformed shape is maintained between processes.

[0020] In addition, an object of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process, which provides sufficient adhesive properties between a semiconductor package and an adhesive tape in an area where the lower surface of the semiconductor package and a protruding electrode come into contact by including a second adhesive layer of silicone having a spiral network structure, and prevents excessive expansion of the gap during a vacuum manufacturing process even if a gap is generated.

[0021]

[0022] An adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention is an adhesive tape for a semiconductor package manufacturing process attached to a lower surface of a semiconductor package having a plurality of protruding electrodes formed thereon, the adhesive tape comprising: a first base film; a first adhesive layer laminated on the first base film and comprising an acrylic copolymer; a second base film laminated on the first adhesive layer and comprising a metal material such that a shape thereof is deformed to correspond to a lower surface topology of the semiconductor package and the deformed shape is maintained between processes; and a second adhesive layer laminated on the second base film and comprising silicon having a spiral network structure.

[0023] In this case, it is preferable that the first base film includes a plastic material or a metal material.

[0024] At this time, the first base film is preferably formed as a single layer of one of polyethylene terephthalate, polyimide, or polyolefin, or a multilayer structure in which two or more layers are laminated, and has a thickness in the range of 10 ㎛ to 150 ㎛.

[0025] In addition, the first base film comprises at least 99 wt% of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 20 μm to 80 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 It is preferable to have a tensile strength in the range of 3.2% to 14.4%, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 20 μm to 80 μm.

[0026] Meanwhile, it is preferable that the first adhesive layer includes at least one of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer.

[0027] In this case, the first adhesive layer comprises at least one of a first adhesive composition of 25-30 parts by weight of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and 70-75 parts by weight of ethyl acetate, and a second adhesive composition of 25-30 parts by weight of an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer, 50-55 parts by weight of toluene, and 15-20 parts by weight of ethyl acetate, and an epoxy-based curing agent. It is preferable to form the mixture by applying it to the first base film, drying, and curing.

[0028] In this case, it is preferable that the first adhesive layer is formed by mixing 80-120 parts by weight of the first adhesive composition and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film, and then drying and curing the mixture.

[0029] In addition, it is preferable that the first adhesive layer is formed by mixing 40-60 parts by weight of the first adhesive composition, 40-60 parts by weight of the second adhesive composition, and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film, and then drying and curing the mixture.

[0030] Meanwhile, it is preferable that the first adhesive layer has a thickness in the range of 100 ㎛ to 700 ㎛ and an adhesive strength of at least 500 gf / 25 mm, and the second adhesive layer has a thickness in the range of 10 ㎛ to 50 ㎛ and an adhesive strength in the range of 50 gf / 25 mm to 500 gf / 25 mm.

[0031] In this case, it is preferable that the thickness of the first adhesive layer decreases within a set thickness range as the size of the protruding electrode increases, and the thickness of the second adhesive layer increases within a set thickness range as the size of the protruding electrode increases, and the thickness of the second adhesive layer decreases within a set thickness range as the spacing between the protruding electrodes increases.

[0032] Meanwhile, it is preferable that the second base film has a thickness in the range of 1 ㎛ to 10 ㎛.

[0033] Meanwhile, the second base film contains at least 99 wt% of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2 A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 10 μm to 35 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 It is desirable to have a tensile strength in the range of 3.2% to 14.4%, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 10 μm to 35 μm.

[0034] Meanwhile, it is preferable that the second adhesive layer includes a trimethylated silica - dimethyl siloxane copolymer.

[0035] Meanwhile, a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention comprises a first tape preparation step of manufacturing a first tape in which a first base film including a plastic material or a metal material, a first adhesive layer including an acrylic copolymer, and a first release film including fluorine are sequentially laminated, a second tape in which a second base film including a metal material, a second adhesive layer including silicone having a spiral network structure, and a second release film including fluorine are sequentially laminated; and a first tape lamination step of removing the first release film from the first tape and bringing the first adhesive layer and the second base film into surface contact to laminate the first tape and the second tape.

[0036] Meanwhile, a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to another embodiment of the present invention comprises a second tape preparation step of manufacturing a first tape in which a first base film including a plastic material or a metal material, a first adhesive layer including an acrylic copolymer, and a first release film including fluorine are sequentially laminated, a third tape in which a second base film is formed on a third release film by a metal deposition method, and a fourth tape in which a second adhesive layer including silicone having a spiral network structure and a second release film including fluorine are sequentially laminated; And, after removing the first release film from the first tape, the first adhesive layer and the second base film of the third tape are brought into surface contact to laminate the first tape and the third tape, and after removing the third release film from the third tape, the second tape and the fourth tape are laminated by bringing the second base film and the second adhesive layer of the fourth tape into surface contact.

[0037]

[0038] As described above, the adhesive tape for a semiconductor package manufacturing process according to the present invention has excellent adhesive properties, retention properties, separation properties, and stress properties, and effectively protects the lower surface of the semiconductor package and the plurality of protruding electrodes formed on the lower surface of the semiconductor package during the EMI shielding layer forming process of the semiconductor package having a plurality of protruding electrodes.

[0039] In addition, the adhesive tape for a semiconductor package manufacturing process according to the present invention effectively maintains stress balance in response to the bottom topology of a semiconductor package in which a plurality of protruding electrodes are formed during an EMI shielding layer forming process by including a first base film made of a plastic material or a metal material, and easily secures the stress characteristics required for the adhesive tape for a semiconductor package manufacturing process.

[0040] In addition, the adhesive tape for a semiconductor package manufacturing process according to the present invention has a first adhesive layer containing an acrylic copolymer, thereby exhibiting excellent heat resistance at high temperatures, thereby reducing a degassing phenomenon, and appropriately supporting the shape deformation of a second base film made of a metal material to prevent the second base film from being torn, and at the same time, even if the second base film is torn, effectively protecting a plurality of protruding electrodes by wrapping the second base film well, and the first adhesive layer has a stronger adhesive strength than the second adhesive layer, thereby causing separation at the second adhesive layer when the adhesive tape is separated from the semiconductor package after the completion of the EMI shielding layer forming process.

[0041] In addition, the adhesive tape for a semiconductor package manufacturing process according to the present invention prevents air bubbles that may occur in the first adhesive layer from being transferred to the second adhesive layer by including a metal material in the second base film, and, due to sufficient holding properties, can maintain the deformed shape during the process after the shape is deformed to correspond to the topology of the bottom surface of the semiconductor package when attached to the bottom surface of the semiconductor package.

[0042] In addition, the adhesive tape for a semiconductor package manufacturing process according to the present invention provides sufficient adhesive properties between the semiconductor package and the adhesive tape in the area where the lower surface of the semiconductor package and the protruding electrode come into contact by including silicone having a spiral network structure in the second adhesive layer, and prevents the gap from expanding excessively during the manufacturing process in a vacuum even if a gap is generated.

[0043]

[0044] FIG. 1 is a drawing showing a cross-sectional shape of an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.

[0045] FIG. 2 is a drawing showing a cross-sectional shape of an adhesive tape for a semiconductor package manufacturing process illustrated in FIG. 1, after removing the second release film, and then adhering it to the lower surface of the semiconductor package of the present invention.

[0046] FIG. 3 is a flowchart for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.

[0047] FIG. 4 is a drawing for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to the first embodiment of the present invention.

[0048] FIG. 5 is a drawing for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to a second embodiment of the present invention.

[0049]

[0050] <Explanation of symbols>

[0051] 10: Semiconductor package

[0052] 11: Protruding electrode

[0053] 100: Adhesive tape for semiconductor package manufacturing process

[0054] 110: Tape 1

[0055] 111: First Base Film

[0056] 112: First adhesive layer

[0057] 113: First heteromorphic film

[0058] 120: Tape 2

[0059] 121: Second base film

[0060] 122: Second adhesive layer

[0061] 123: Second heteromorphic film

[0062] 130: Tape 3

[0063] 131: Third heteromorphic film

[0064] 140: Tape 4

[0065]

[0066] The accompanying drawings of the present invention may be illustrated with exaggerated expressions for the purpose of differentiation and clarity from prior art, as well as for the convenience of understanding the technology. Furthermore, the terms described below are terms defined in consideration of their functions in the present invention and may vary depending on the intentions or practices of users and operators. Therefore, the definitions of these terms should be based on the technical content throughout this specification. Furthermore, the embodiments are merely exemplary of the components set forth in the claims of the present invention and do not limit the scope of the rights of the present invention. The scope of rights should be interpreted based on the technical concepts throughout the specification of the present invention.

[0067]

[0068] FIG. 1 is a drawing showing a cross-sectional shape of an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention, FIG. 2 is a drawing showing a cross-sectional shape of the adhesive tape for a semiconductor package manufacturing process shown in FIG. 1 after removing a second release film and then bonding it to the lower surface of a semiconductor package of the present invention, FIG. 3 is a flowchart for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention, FIG. 4 is a drawing for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to a first embodiment of the present invention, and FIG. 5 is a drawing for explaining a method for manufacturing an adhesive tape for a semiconductor package manufacturing process according to a second embodiment of the present invention.

[0069]

[0070] Before describing the embodiments of the present invention, it is necessary for an adhesive tape for a semiconductor package manufacturing process, which is typically used in an EMI shielding layer forming process, to secure adhesion characteristics, retention characteristics, removal characteristics, and stress characteristics.

[0071] First, in terms of adhesion characteristics, the base film and adhesive layer of the adhesive tape must be able to adhere and adhere to the protruding electrode and the topology of the bottom surface of the semiconductor package including the protruding electrode, regardless of the size (e.g., diameter or height) of the protruding electrode, so that no air gap occurs in the area where the bottom surface of the semiconductor package and the protruding electrode come into contact. In addition, the adhesive tape must adhere well without pushing out the protruding electrode in a process environment for forming an EMI shielding layer, such as a high temperature and high vacuum environment. In other words, the adhesive tape must be able to continuously maintain its adhesion and adhesion capabilities even in the process environment for forming an EMI shielding layer.

[0072] Next, in terms of retention characteristics, the adhesive tape must be able to maintain its circular shape without self-degeneration, deformation, discoloration, or outgassing under the conditions of the EMI shielding layer formation process, while maintaining its adhesive ability and sealing ability to prevent gases and particles from penetrating between the adhesive tape and the bonding surface of the semiconductor package during the process. In addition, the adhesive tape must be able to prevent excessive expansion of the gap between the processes (especially during the process in a high vacuum environment) when a gap is generated in the area where the lower surface of the semiconductor package and the protruding electrode come into contact during the EMI shielding layer formation process.

[0073] Next, in terms of removal characteristics, after completing the EMI shielding layer formation process, the adhesive tape must be easily separated from the semiconductor package at room temperature and atmospheric pressure, with little force, and at the same time, no adhesive material should remain on the surface of the bottom surface or protruding electrodes of the semiconductor package. In particular, the adhesive tape must have an adhesive strength that allows for easy separation of the semiconductor package (or chip) from the adhesive tape by automated equipment that automatically separates the semiconductor package (or chip) from the adhesive tape, and must not be punctured or torn by the vacuum chuck or lift pin used in the automated equipment. Typically, the maximum endurance tensile strength of automated equipment that automatically separates the semiconductor package (or semiconductor chip) from the adhesive tape is approximately 500 gf / 25 mm, so it is desirable for the adhesive tape to have an adhesive strength lower than this in terms of removal characteristics.

[0074] And, in terms of stress characteristics, since multiple semiconductor packages, i.e., multiple semiconductor chips, are mounted and bonded on the adhesive tape during the EMI shielding layer formation process, the adhesive tape must secure an appropriate level of tensile stress and compressive stress so that the EMI shielding layer formation process can proceed while maintaining a constant gap between adjacent semiconductor chips. In other words, the adhesive tape must be able to stably maintain a taut, stretched state while maintaining a stress balance corresponding to the bottom topology of the semiconductor package including the protruding electrode.

[0075]

[0076] Referring to FIGS. 1 and 2, an adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention relates to an adhesive tape (100) for a semiconductor package manufacturing process attached to the lower surface of a semiconductor package (10) on which a plurality of protruding electrodes (11) are formed.

[0077] An adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention is created to secure the adhesion characteristics, retention characteristics, removal characteristics, and stress characteristics required during an EMI shielding layer forming process as described above.

[0078]

[0079] First, an adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention is configured to include a first base film (111), a first adhesive layer (112), a second base film (121), and a second adhesive layer (122).

[0080] In this case, the adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention may further include a second release film (123), and the second release film (123) will be described in more detail in the manufacturing method of the adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.

[0081]

[0082] The above first base film (111) includes a plastic material or a metal material.

[0083] In this case, the first base film (111) made of a plastic material may be formed as a single layer of polyethylene terephthalate, polyimide, or polyolefin, or as a multilayer structure in which two or more layers are laminated.

[0084] At this time, the first base film (111) may have a thickness in the range of 10 ㎛ to 150 ㎛. If the thickness of the first base film (111) is less than 10 ㎛, it may be very difficult for a user to handle the adhesive tape (100) for the semiconductor package manufacturing process according to the embodiment of the present invention, and if the thickness exceeds 150 ㎛, it may be difficult to maintain stress balance in response to the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed.

[0085] Meanwhile, the first base film (111) made of metal material contains at least 99 wt% of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2 A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 20 μm to 80 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 It is preferable to have a tensile strength in the range of 3.2% to 14.4%, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 20 μm to 80 μm.

[0086] In this case, the first base film (111) may include 99 wt% or more of aluminum (Al) or 99 wt% or more of copper (Cu), and may include 1 wt% or less of an additive to satisfy the tensile strength range and elongation range described above. The additive may include one or two or more selected from the group consisting of silicon (Si), iron (Fe), manganese (Mn), magnesium (Mg), zinc (Zn), and titanium (Ti).

[0087] Meanwhile, the first base film (111) contains 99 wt% or more of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2 The reason why the tensile strength of the range must be satisfied is that the tensile strength is 4.8 kgf / mm 2 If it is less than 14.4 kgf / mm, a phenomenon may occur in which the semiconductor package (100) cannot be stably maintained in a taut state without stretching during the manufacturing process, and the tensile strength may be less than 14.4 kgf / mm. 2 In case of excess, the stress balance cannot be maintained in accordance with the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed.

[0088] In addition, the reason why the first base film (111) must contain 99 wt% or more of aluminum (Al) and have an elongation in the range of 6.4% to 19.2% is that, if the elongation is less than 6.4%, it may be difficult to deform the shape of the first base film (111) in response to the bottom topology of the semiconductor package (10), and if the elongation is more than 19.2%, it is difficult for the first base film (111) to continuously maintain the deformed shape between processes.

[0089] Meanwhile, the first base film (111) contains 99 wt% or more of copper (Cu) and has a density of 8 kgf / mm 2 31.2 kgf / mm 2The reason why the tensile strength of the range must be satisfied is that the tensile strength is 8 kgf / mm 2 If it is less than 31.2 kgf / mm, a phenomenon may occur in which the semiconductor package (100) cannot be stably maintained in a taut state without stretching during the manufacturing process, and the tensile strength may be less than 31.2 kgf / mm. 2 In case of excess, the stress balance cannot be maintained in accordance with the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed.

[0090] In addition, the reason why the first base film (111) must contain 99 wt% or more of copper (Cu) and satisfy an elongation in the range of 3.2% to 14.4% is that, if the elongation is less than 3.2%, it may be difficult to deform the shape of the first base film (111) in response to the bottom topology of the semiconductor package (10), and if the elongation is more than 14.4%, it is difficult for the first base film (111) to continuously maintain the deformed shape between processes.

[0091] Meanwhile, the first base film (111) made of a metal material may have a thickness in the range of 10 ㎛ to 150 ㎛. If the thickness of the first base film (111) is less than 20 ㎛, it may be very difficult for a user to handle the adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention, and if the thickness exceeds 80 ㎛, it may be difficult to maintain stress balance in response to the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed.

[0092] The first base film (111) is formed with the above-mentioned material and structure, thereby effectively maintaining stress balance in response to the bottom topology of the semiconductor package (10) on which the protruding electrode (11) is formed during the EMI shielding layer forming process, and easily securing the stress characteristics required for the adhesive tape for the semiconductor package manufacturing process. That is, the first base film (111) is formed with the above-mentioned material and structure, thereby stably maintaining a tautly pulled state without stretching during the manufacturing process of the semiconductor package (100), and at the same time, maintaining stress balance in response to the topology of the bottom surface of the semiconductor package (10) on which the protruding electrode (11) is formed, and has the characteristic of causing little deformation and transformation in a high temperature and high vacuum environment. In addition, the first base film (111) includes a plastic material or a metal material, thereby preventing external bubbles (gas, particles) from being transferred to the first adhesive layer (112).

[0093]

[0094] The above first adhesive layer (112) is laminated on top of the first base film (111) and includes an acrylic copolymer.

[0095] The first adhesive layer (112) preferably has a thickness greater than that of the second adhesive layer (122) and an adhesive strength stronger than that of the second adhesive layer (122). More specifically, the first adhesive layer (112) may have a thickness in the range of 100 μm to 700 μm and an adhesive strength of at least 500 gf / 25 mm or more. That is, the first adhesive layer (112) may have a thickness in the range of 100 μm to 700 μm and an adhesive strength of at least 500 gf / 25 mm or more, for example, an adhesive strength in the range of 500 gf / 25 mm to 2500 gf / 25 mm, so as to be able to impregnate the protruding electrode (11) therein.

[0096] Here, if the thickness of the first adhesive layer (112) is less than 100 ㎛, the ability to impregnate the protruding electrode (11) into the adhesive tape (100) for the semiconductor package manufacturing process and provide a cushioning feeling to the protruding electrode (11) during the process may be reduced, and if the thickness exceeds 700 ㎛, the adhesive ability, sealing ability, and holding characteristics between the lower surface of the semiconductor package (10) and the adhesive tape (100) for the semiconductor package manufacturing process may be reduced.

[0097] In addition, when the adhesive strength of the first adhesive layer (112) is less than 500 gf / 25 mm, a defect may occur in which the first adhesive layer (112) is peeled off when the adhesive tape (100) for the semiconductor package manufacturing process is removed from the semiconductor package (10), and when the adhesive strength exceeds 2500 gf / 25 mm, the adhesive strength of the first adhesive layer (112) has a characteristic in which the adhesive strength is proportional to the thickness thereof, so it may be difficult to implement the thickness of the first adhesive layer (112) required for the adhesive tape (100) for the semiconductor package manufacturing process.

[0098] In terms of material, it is preferable that the first adhesive layer (112) includes at least one of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer. At this time, the bonding order of each monomer in the two types of acrylic copolymers can be changed, and the bonding method can have an alternating copolymer, a block copolymer, a random copolymer, an isotactic copolymer, a syndiotactic copolymer, an atactic copolymer, etc., and is not limited to a specific bonding method.

[0099] Meanwhile, the first adhesive layer (112) comprises at least one of a first adhesive composition comprising 25-30 parts by weight of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and 70-75 parts by weight of ethyl acetate, and a second adhesive composition comprising 25-30 parts by weight of an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer, 50-55 parts by weight of toluene, and 15-20 parts by weight of ethyl acetate. It is preferable to form the film by mixing an epoxy-based hardener, applying it to the first base film (111), and then drying and hardening it.

[0100] In this case, if the amount of the butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer, which is the adhesive agent of the first adhesive composition, is less than 25 parts by weight, the adhesive strength and heat resistance are reduced and at the same time, the second base film (121) becomes too soft to perform its cushioning role insufficiently, causing a problem of tearing, and if it exceeds 30 parts by weight, the amount becomes too hard to perform its cushioning role insufficiently, causing a problem of difficulty in deforming its shape to correspond to the bottom topology of the semiconductor package (10) and difficulty in independently maintaining the deformed shape due to expansion even after deforming it.

[0101] In addition, if the amount of ethyl acetate, which is the solvent of the first adhesive composition, is less than 70 parts by weight, the viscosity of the first adhesive composition becomes too high, making it difficult to mix with the second adhesive composition and the epoxy-based curing agent, and the surface of the first adhesive layer (112) becomes rough during the application process, and at the same time, a lot of outgassing occurs during the drying and curing process, causing a problem in which the properties of the first adhesive layer (112) deteriorate. If it exceeds 75 parts by weight, the viscosity of the first adhesive composition becomes too low, making it difficult to form a sufficient thickness of the first adhesive layer (112) during the application process, causing a problem in which the cushioning properties of the first adhesive layer (112) deteriorate.

[0102] In addition, if the first adhesive layer (112) contains less than 25 parts by weight of the acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer, which is the adhesive agent of the second adhesive composition, the adhesive strength and heat resistance are reduced and at the same time, it becomes too soft to perform a cushioning role insufficiently, causing a problem of tearing of the second base film (121), and if it exceeds 30 parts by weight, it becomes too hard to perform a cushioning role insufficiently, causing a problem of difficulty in deforming the shape to correspond to the bottom topology of the semiconductor package (10) and difficulty in independently maintaining the deformed shape due to expansion even after deforming.

[0103] In addition, if the sum of toluene and ethyl acetate, which are the solvents of the second adhesive composition, is less than 65 parts by weight, the viscosity of the second adhesive composition becomes too high, making it difficult to mix the first adhesive composition and the epoxy-based curing agent, and the surface of the first adhesive layer (112) becomes rough during the application process, and at the same time, a lot of outgassing occurs during the drying and curing process, causing a problem in which the properties of the first adhesive layer (112) deteriorate. If it exceeds 75 parts by weight, the viscosity of the second adhesive composition becomes too low, making it difficult to form a sufficient thickness of the first adhesive layer (112) during the application process, causing a problem in which the cushioning properties of the first adhesive layer (112) deteriorate.

[0104] Meanwhile, the first adhesive layer (112) is preferably formed by mixing 80-120 parts by weight of the first adhesive composition and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film (111), and then drying and curing the mixture.

[0105] In this case, if the first adhesive composition is less than 80 parts by weight, the first adhesive layer (112) has poor adhesive strength and heat resistance and becomes too hard to perform its cushioning role sufficiently, causing a problem in that it is difficult to change its shape to correspond to the bottom topology of the semiconductor package (10). If the first adhesive composition is more than 120 parts by weight, it becomes too soft to perform its cushioning role sufficiently, causing a problem in that the second base film (121) tears.

[0106] In addition, if the amount of the epoxy-based hardener is less than 0.5 parts by weight, the first adhesive layer (112) does not sufficiently harden, becomes too soft and thus fails to perform its cushioning role, causing a problem in which the second base film (121) tears. If the amount is more than 1.5 parts by weight, the first adhesive layer (112) becomes too hard and thus fails to perform its cushioning role, causing a problem in which it is difficult to change its shape to correspond to the bottom topology of the semiconductor package (10).

[0107] Meanwhile, it is more preferable that the first adhesive layer (112) is formed by mixing 40-60 parts by weight of the first adhesive composition, 40-60 parts by weight of the second adhesive composition, and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film (111), and then drying and curing the mixture.

[0108] In this case, if the first adhesive composition is less than 40 parts by weight, the first adhesive layer (112) has poor adhesive strength and heat resistance and becomes too hard to perform its cushioning role sufficiently, causing a problem in that it is difficult to change its shape to correspond to the bottom topology of the semiconductor package (10). If the first adhesive composition is more than 60 parts by weight, the first adhesive layer (112) becomes too soft to perform its cushioning role sufficiently, causing a problem in that the second base film (121) tears.

[0109] In addition, if the amount of the epoxy-based hardener is less than 0.5 parts by weight, the first adhesive layer (112) does not sufficiently harden, becomes too soft and thus fails to perform its cushioning role, causing a problem in which the second base film (121) tears. If the amount is more than 1.5 parts by weight, the first adhesive layer (112) becomes too hard and thus fails to perform its cushioning role, causing a problem in which it is difficult to change its shape to correspond to the bottom topology of the semiconductor package (10).

[0110] The first adhesive layer (112) has excellent heat resistance at high temperatures due to its material properties in relation to the retention characteristics, thereby reducing the degassing phenomenon, and appropriately supports the shape deformation of the second base film (121) made of a metal material to prevent the second base film (121) from being torn, and at the same time, even if the second base film (121) is torn, it wraps it well to effectively protect the protruding electrode (11).

[0111] In addition, the first adhesive layer (112) has a stronger adhesive strength than the second adhesive layer (122) in terms of separation characteristics, so that when the adhesive tape (100) for the semiconductor package manufacturing process is separated from the semiconductor package (10) after the EMI shielding layer forming process is completed, separation occurs at the second adhesive layer (122).

[0112] Meanwhile, the first adhesive layer (112) preferably has a thickness in the range of 100 ㎛ to 700 ㎛, and as the size of the protruding electrode (11) increases, the thickness decreases within the set thickness range, and as the spacing between the protruding electrodes (11) increases, the thickness increases within the set thickness range.

[0113] As the size of the protruding electrode (11) increases, the reason why the thickness of the first adhesive layer (112) decreases within the set thickness range is that the thickness of the second adhesive layer (122) increases in the same environment, so that the adhesive properties, separation properties, retention properties and stress properties of the adhesive tape (100) for the semiconductor package manufacturing process required in the semiconductor package (10) manufacturing process are maintained constant while maintaining the overall thickness of the adhesive tape (100) for the semiconductor package manufacturing process constant.

[0114] In addition, as the spacing between the protruding electrodes (11) increases, the reason why the thickness of the first adhesive layer (112) increases within the set thickness range is that the thickness of the second adhesive layer (122) decreases in the same environment, so that the adhesive properties, separation properties, retention properties, and stress properties of the adhesive tape (100) for the semiconductor package manufacturing process required in the semiconductor package manufacturing process are maintained constant while maintaining the overall thickness of the adhesive tape (100) for the semiconductor package manufacturing process constant. In particular, when the spacing between the protruding electrodes (11) increases, the area of ​​the lower surface of the semiconductor package (10) bonded to the second adhesive layer (122) increases, so that after the EMI shielding layer forming process, there is a high possibility that the adhesive tape (100) for the semiconductor package manufacturing process is not easily removed or an adhesive material remains on the lower surface of the semiconductor package (10), so that the thickness of the second adhesive layer (122) is reduced to lower the adhesive strength with the lower surface of the semiconductor package (10).

[0115]

[0116] The second base film (121) is laminated on top of the first adhesive layer (112) and includes a metal material so that the shape is deformed to correspond to the bottom topology of the semiconductor package (10) and the deformed shape is maintained between processes.

[0117] As an example, the second base film (121) preferably has a thickness in the range of 1 ㎛ to 10 ㎛. This is because, when the thickness of the second base film (210) is less than 1 ㎛, it is very difficult for the user to handle the adhesive tape (100) for the semiconductor package manufacturing process and it is also difficult to maintain a deformed shape, and when the thickness of the second base film (121) exceeds 10 ㎛, it is difficult to deform the shape in response to the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed and it may be difficult to maintain stress balance. Unlike other embodiments described below, a thickness in this range is advantageous when the size of the protruding electrode (11) is large.

[0118] For example, the second base film (121) may be manufactured in the form of a transfer film of metal deposition by depositing aluminum (Al) or copper (Cu) on a release film using a metal deposition method, and then may be bonded to the first adhesive layer (112). This will be described in more detail in the description of the manufacturing method (S100) of the adhesive tape (100) for a semiconductor package manufacturing process according to the second embodiment of the present invention.

[0119] Meanwhile, the second base film (121) as another embodiment contains at least 99 wt% of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2 Tensile strength in the range of 8 kgf / mm, elongation in the range of 6.4% to 19.2%, and thickness in the range of 10 ㎛ to 35 ㎛, or containing at least 99 wt% or more of copper (Cu). 2 31.2 kgf / mm 2 It is desirable to have a tensile strength in the range of 3.2% to 14.4%, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 10 μm to 35 μm.

[0120] More specifically, the second base film (121) can independently maintain the deformed shape after being deformed to correspond to the topology of the lower surface of the semiconductor package (10) where the protruding electrode (11) is formed during the manufacturing process of the semiconductor package (10), and can include 99 wt% or more of aluminum (Al) or 99 wt% or more of copper (Cu) so as to prevent degeneration and deformation in a high temperature and high vacuum environment.

[0121] In this case, the second base film (121) may include 99 wt% or more of aluminum (Al) or 99 wt% or more of copper (Cu), and may include 1 wt% or less of an additive to satisfy the tensile strength range and elongation range described above. The additive may include one or two or more selected from the group consisting of silicon (Si), iron (Fe), manganese (Mn), magnesium (Mg), zinc (Zn), and titanium (Ti).

[0122] Meanwhile, the second base film (121) contains 99 wt% or more of aluminum (Al) and has a density of 4.8 kgf / mm 2 14.4 kgf / mm 2 The reason why the tensile strength of the range must be satisfied is that the tensile strength is 4.8 kgf / mm 2 In case of less than 14.4 kgf / mm, the second base film (121) may be broken or torn due to external force applied during the manufacturing process of the adhesive tape (100) for the semiconductor package manufacturing process and the EMI shielding layer forming process. 2 In case of excess, it is difficult to change the shape of the second base film (121) in response to the bottom topology of the semiconductor package (10).

[0123] In addition, the reason why the second base film (121) must contain 99 wt% or more of aluminum (Al) and have an elongation in the range of 6.4% to 19.2% is that, if the elongation is less than 6.4%, it may be difficult to deform the shape of the second base film (121) in response to the bottom topology of the semiconductor package (10), and if the elongation is more than 19.2%, it is difficult for the second base film (121) to continuously maintain the deformed shape between processes.

[0124] Meanwhile, the second base film (121) contains 99 wt% or more of copper (Cu) and has a density of 8 kgf / mm 2 31.2 kgf / mm 2 The reason why the tensile strength of the range must be satisfied is that the tensile strength is 8 kgf / mm 2 In case of less than 31.2 kgf / mm, the second base film (121) may be broken or torn due to external force applied during the manufacturing process of the adhesive tape (100) for the semiconductor package manufacturing process and the EMI shielding layer forming process. 2 In case of excess, it is difficult to change the shape of the second base film (121) in response to the bottom topology of the semiconductor package (10).

[0125] In addition, the reason why the second base film (121) must contain 99 wt% or more of copper (Cu) and have an elongation in the range of 3.2% to 14.4% is that, if the elongation is less than 3.2%, it may be difficult to deform the shape of the second base film (121) in response to the bottom topology of the semiconductor package (10), and if the elongation is more than 14.4%, it is difficult for the second base film (121) to continuously maintain the deformed shape between processes.

[0126] Meanwhile, the second base film (121) may have a thickness in the range of 10 ㎛ to 35 ㎛. This is because, when the thickness of the second base film (210) is less than 10 ㎛, it is very difficult for the user to handle the adhesive tape (100) for the semiconductor package manufacturing process, and when the thickness of the second base film (121) exceeds 35 ㎛, it is difficult to deform the shape in response to the topology of the lower surface of the semiconductor package (10) on which the protruding electrode (11) is formed, and it may be difficult to maintain stress balance. Unlike the aforementioned embodiment, a thickness in this range is advantageous when the size of the protruding electrode (11) is small.

[0127] The second base film (121) includes a metal material, thereby preventing bubbles (gas, particles) that may be generated in the first adhesive layer (112) from being transferred to the second adhesive layer (122), and due to sufficient holding properties, when the adhesive tape (100) for the semiconductor package manufacturing process is attached to the lower surface of the semiconductor package (10), the shape can be deformed to correspond to the lower surface topology of the semiconductor package (10) and then maintained in the deformed shape between processes. That is, the second base film (121) includes a metal material, thereby blocking gases generated in the first adhesive layer (112) from being transferred to the second adhesive layer (122), and supporting the second adhesive layer (122) so that it remains flat, thereby continuously maintaining the adhesive ability and the adhesion ability with the lower surface of the semiconductor package (10) having the protruding electrode (11) in a high temperature and high vacuum environment.

[0128]

[0129] The second adhesive layer (122) is laminated on top of the second base film (121) and includes silicone having a spiral network structure.

[0130] The second adhesive layer (122) preferably has a thickness smaller than that of the first adhesive layer (112) and an adhesive strength weaker than that of the first adhesive layer (122). More specifically, the second adhesive layer (122) may have a thickness in the range of 10 μm to 50 μm and an adhesive strength in the range of 50 gf / 25 mm to 500 gf / 25 mm so as to enable seamless adhesion along the bottom topology of the semiconductor package (10) on which the protruding electrode (11) is formed.

[0131] Here, if the thickness of the second adhesive layer (122) is less than 10 ㎛, the required adhesive strength cannot be secured, and thus the adhesive ability, sealing ability, and retention characteristics with the lower surface of the semiconductor package (10) may be reduced during the process, resulting in a peeling phenomenon. If the thickness exceeds 50 ㎛, the second adhesive layer (122) may be pushed out laterally due to pressing pressure when attached to the lower surface of the semiconductor package (10), resulting in a defect, or a problem may arise in that it is difficult to remove it from the semiconductor package (10) after the process is completed.

[0132] In addition, if the adhesive strength of the second adhesive layer (122) is less than 50 gf / 25 mm, the second adhesive layer (122) may be pushed out and peeled from the lower surface of the semiconductor package (10) and the protruding electrode (11) in the high temperature and high vacuum process environment of the EMI shielding layer forming process, or gas and particles may penetrate between the second adhesive layer (122) and the bonding surface of the semiconductor package (10) during the process. If the adhesive strength exceeds 500 gf / 25 mm, it may be difficult to remove the second adhesive layer (122) from the semiconductor package (10) at room temperature and atmospheric pressure after the EMI shielding layer forming process, or an adhesive material may remain on the lower surface of the semiconductor package (10) and the surface of the protruding electrode (11).

[0133] In terms of material, it is preferable that the second adhesive layer (122) includes a trimethylated silica - dimethyl siloxane copolymer.

[0134] The second adhesive layer (122) includes a trimethylated silica - dimethyl siloxane copolymer, thereby reducing physical property deformation caused by heat generated during the EMI shielding layer forming process and easily securing the adhesive properties, retention properties, separation properties, and stress properties required for an adhesive tape for a semiconductor package manufacturing process.

[0135] Furthermore, since the second adhesive layer (122) has a spiral network structure as its molecular structure with a siloxane bond as its basic skeleton, even if an air gap is generated between the lower surface of the semiconductor package (10) and the protruding electrode (11) and the second adhesive layer (122), the air gap is prevented from expanding excessively even in a high temperature and high vacuum environment.

[0136] Meanwhile, the second adhesive layer (122) preferably has a thickness in the range of 10 ㎛ to 50 ㎛, and as the size of the protruding electrode (11) increases, the thickness increases within the set thickness range, and as the spacing between the protruding electrodes (11) increases, the thickness decreases within the set thickness range.

[0137] The reason why the thickness of the second adhesive layer (122) increases within the set thickness range as the size of the protruding electrode (11) increases is that as the size of the protruding electrode (11) increases, there is a high possibility that the second adhesive layer (122) will be pushed out and peeled off from the protruding electrode (11), and thus the adhesive strength of the second adhesive layer (122) is to be increased.

[0138] In addition, the reason why the reduction of the second adhesive layer (122) within the set thickness range increases as the spacing between the protruding electrodes (11) increases is that as the spacing between the protruding electrodes (11) increases, the area of ​​the lower surface of the semiconductor package (10) bonded to the second adhesive layer (122) increases, so that the second adhesive layer (122) may not be easily removed after the EMI shielding layer forming process or an adhesive material may remain on the lower surface of the semiconductor package (10), and thus the adhesive strength of the second adhesive layer (122) is to be lowered.

[0139] The second adhesive layer (122) includes silicon having a spiral network structure in relation to adhesive properties, thereby providing sufficient adhesive properties in the area where the lower surface of the semiconductor package (10) and the protruding electrode (11) come into contact, and in relation to separation properties, has a weaker adhesive force than the first adhesive layer (112), thereby causing separation to occur in the second adhesive layer (122) rather than the first adhesive layer (112) when the adhesive tape (100) for the semiconductor package manufacturing process is removed from the semiconductor package (10) after the EMI shielding layer forming process.

[0140]

[0141] As described above, the adhesive tape (100) for a semiconductor package manufacturing process according to the present invention has excellent adhesive properties, retention properties, separation properties, and stress properties, so that it effectively protects the lower surface (10) of the semiconductor package and the plurality of protruding electrodes (11) on the lower surface of the semiconductor package (10) during the EMI shielding layer forming process of the semiconductor package (10) having the plurality of protruding electrodes (11).

[0142]

[0143] Hereinafter, referring to FIGS. 3 to 5, a method (S100) for manufacturing an adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention will be described.

[0144] The description will be divided into the first embodiment and the second embodiment, and some of the overlapping descriptions regarding the configuration described above in the adhesive tape (100) for the semiconductor package manufacturing process according to the embodiment of the present invention will be omitted.

[0145] A method (S100) for manufacturing an adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention comprises a tape preparation step (S110) and a tape lamination step (S120).

[0146]

[0147] Example 1

[0148]

[0149] A method (S100) for manufacturing an adhesive tape (100) for a semiconductor package manufacturing process according to a first embodiment of the present invention comprises a first tape preparation step (S111) and a first tape lamination step (S121).

[0150]

[0151] The above first tape preparation step (S111) is a step of manufacturing a first tape (110) in which the first base film (111) including a plastic material or a metal material, the first adhesive layer (112) including an acrylic copolymer, and the first release film (113) including fluorine are sequentially laminated, and a second tape (120) in which the second base film (121) including a metal material, the second adhesive layer (122) including silicone having a spiral network structure, and the second release film (123) including fluorine are sequentially laminated.

[0152]

[0153] First, the method for manufacturing the first tape (110) begins with the process in which the manufacturer prepares the first base film (111) comprising a plastic material or a metal material. As described above, the first base film (111) contains at least 99 wt% of aluminum (Al) and has a density of 4.8 kgf / mm. 2 14.4 kgf / mm 2 A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 20 μm to 80 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 It may have a tensile strength in the range of 3.2% to 14.4%, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 20 μm to 80 μm. Alternatively, the first base film (111) may be formed as a single layer of any one of polyethylene terephthalate, polyimide, and polyolefin, or a multilayer structure in which two or more layers are laminated, and may have a thickness in the range of 10 μm to 150 μm.

[0154] Next, the manufacturer injects the first adhesive composition (80-120 parts by weight) of 25-30 parts by weight of butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer, 70-75 parts by weight of ethyl acetate and the epoxy curing agent (0.5-1.5 parts by weight) into a mixing container and mixes them through stirring, or mixes the first adhesive composition (80-120 parts by weight) of 25-30 parts by weight of butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer, 70-75 parts by weight of ethyl acetate The above two adhesive compositions (40-60 parts by weight) of the adhesive composition (40-60 parts by weight), acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer (25-30 parts by weight), toluene (50-55 parts by weight), and ethyl acetate (15-20 parts by weight) and the epoxy curing agent can be injected into a mixing container and mixed through stirring. At this time, the mixing process through stirring can be performed under room temperature and normal humidity conditions.

[0155] At this time, the manufacturer stabilizes the acrylic composition in which the first adhesive composition and the epoxy curing agent are stirred and mixed or the acrylic composition in which the first adhesive composition, the second adhesive composition and the epoxy curing agent are stirred and mixed. The stabilization of the acrylic composition is to remove air bubbles in the acrylic composition and at the same time induce chemical stability and uniform crosslinking reaction of the acrylic composition. As one means of stabilizing the acrylic composition, ultrasonic treatment or vacuum suction may be performed to remove air bubbles in the acrylic composition, and after removing air bubbles, the prepared acrylic composition may be allowed to rest for 4 to 12 hours in a thermal equilibrium state to stabilize the acrylic composition. The stabilization of the acrylic composition is preferably performed in a thermal equilibrium state to secure chemical stability and prevent rapid crosslinking reaction.

[0156] Next, the manufacturer forms the first adhesive layer (112) by applying a stabilized acrylic composition onto the first base film (111) using a comma coater, a slot-die coater, a gravure coater, etc., and then drying and curing the composition.

[0157] At this time, the manufacturer can apply the acrylic composition on the first base film (111) thicker than the final thickness of the first adhesive layer (112) by using a comma coater, a slot-die coater, a gravure coater, etc. Specifically, the comma coater, the slot-die coater, the gravure coater, etc. can be controlled to apply the acrylic composition 2.5 to 3.5 times thicker than the target thickness of the first adhesive layer (112). For example, when the target thickness of the first adhesive layer (112) is in the range of 100 ㎛ to 700 ㎛, the comma coater can be controlled to apply the acrylic composition with a coating thickness in the range of 250 ㎛ to 2450 ㎛. The method of applying the stabilized acrylic composition on the above-mentioned 1 base film (111) can also be performed by a spin coating method or a spraying method.

[0158] Next, the manufacturer can finally form the first adhesive layer (112) through a dry heat treatment and maturation curing process, and during this process, the thickness of the first adhesive layer (112) gradually decreases to reach the target thickness.

[0159] More specifically, the manufacturer performs a dry heat treatment on the first adhesive layer (112). The dry heat treatment is intended to remove the solvent within the acrylic composition and simultaneously activate the crosslinking reaction, and may be performed using an infrared lamp or infrared / hot air combination drying, etc., and may be performed at a temperature ranging from 90°C to 120°C for 15 to 30 minutes.

[0160] In some cases, the dry heat treatment may be performed separately as primary, secondary, and tertiary dry heat treatments.

[0161] At this time, the primary dry heat treatment is performed to remove the solvent in the acrylic composition and at the same time activate the crosslinking reaction, and can be performed using an infrared lamp or infrared / hot air combination drying, etc., and can be performed at a temperature in the range of 60°C to 80°C for 3 to 6 minutes.

[0162] Next, the secondary dry heat treatment is performed in the same manner as the primary dry heat treatment to remove the solvent within the acrylic composition and simultaneously activate the crosslinking reaction. This can be performed using an infrared lamp or a combination of infrared and hot air drying, and can be performed at a higher temperature than the primary dry heat treatment for the same amount of time as the primary dry heat treatment. For example, the secondary dry heat treatment can be performed at a temperature ranging from 90°C to 120°C for 3 to 6 minutes.

[0163] Next, the third dry heat treatment is performed to remove the solvent in the acrylic composition and simultaneously activate the crosslinking reaction, similar to the first and second dry heat treatments. This can be performed using an infrared lamp or infrared / hot air combination drying, and can be performed at a higher temperature and for a longer time than the second dry heat treatment. For example, the third dry heat treatment can be performed at a temperature in the range of 190°C to 210°C for 9 to 18 minutes.

[0164] Here, the drying of the first adhesive layer (112) by gradually increasing the temperature during the first to third dry heat treatment processes is to prevent the first adhesive layer (112) from drying and hardening from the surface, thereby making it possible to easily remove air bubbles within the first adhesive layer (112). In addition, by gradually decreasing the temperature to room temperature after performing the third dry heat treatment, the first adhesive layer (112) can be implemented in a more stable state and with a uniform thickness.

[0165] Next, the manufacturer cures and stabilizes the first adhesive layer (112) at 20°C to 60°C for 12 to 48 hours. That is, the first base film (111) and the first adhesive layer (112), which have been heated during the dry heat treatment process, are slowly cooled to 20°C to 60°C during a rest period, thereby stably completing the crosslinking reaction within the first adhesive layer (112) and simultaneously securing the required physical properties of the first adhesive layer (112).

[0166] Next, the manufacturer attaches the first release film (113) containing fluorine on the first adhesive layer (112). The first release film (113) may contain fluorine to protect the first adhesive layer (112) including an acrylic copolymer and to facilitate separation from the first adhesive layer (112), and may have an adhesive strength in the range of 3 gf / 25 mm to 8 gf / 25 mm. At this time, if the adhesive strength of the first release film (113) is less than 3 gf / 25 mm, the first adhesive layer (112) may be naturally peeled off, and if the adhesive strength is greater than 8 gf / 25 mm, there is a problem that the first adhesive layer (112) may be damaged in the process of removing the first release film (113).

[0167] The manufacturer can manufacture the first tape (110) through the above-described process.

[0168]

[0169] Meanwhile, the method for manufacturing the second tape (120) is such that the manufacturer includes at least 99 wt% or more of aluminum (Al) and has a thickness of 6 kgf / mm. 2 Up to 12 kgf / mm 2 Tensile strength in the range of 10 kgf / mm, elongation in the range of 8% to 16%, and thickness in the range of 10 ㎛ to 35 ㎛, or containing at least 99 wt% or more of copper (Cu).2 Up to 26 kgf / mm 2 The process begins with preparing the second base film (121) having a tensile strength in the range of 10 μm to 35 μm, an elongation in the range of 4% to 12%, and a thickness in the range of 10 μm to 35 μm.

[0170] Next, the manufacturer pours the trimethylated silica-dimethylsiloxane copolymer, ethylbenzene solvent, and epoxy curing agent into a mixing vessel and mixes them through stirring. The mixing process through stirring can be performed at room temperature and humidity.

[0171] At this time, the manufacturer stabilizes the stirred and mixed silicone composition. The stabilization of the silicone composition is to remove air bubbles in the silicone composition and at the same time induce chemical stability and uniform crosslinking reaction of the silicone composition. As one method of stabilizing the silicone composition, ultrasonic treatment or vacuum suction can be performed to remove air bubbles in the silicone composition, and after removing air bubbles, the manufactured silicone composition can be allowed to rest for 4 to 12 hours in a state of thermal equilibrium to stabilize the silicone composition. It is preferable that the stabilization of the silicone composition is performed in a state of thermal equilibrium to secure chemical stability and prevent rapid crosslinking reaction.

[0172] Next, the manufacturer forms the second adhesive layer (122) by applying a stabilized silicone composition onto the second base film (121) using a comma coater, a slot-die coater, a gravure coater, etc., and then drying and curing the composition.

[0173] At this time, the manufacturer can apply the silicone-based composition on the second base film (121) thicker than the final thickness of the second adhesive layer (122) by using a comma coater, a slot-die coater, a gravure coater, etc. Specifically, the comma coater, the slot-die coater, the gravure coater, etc. can be controlled to apply the silicone-based composition 2.5 to 3.5 times thicker than the target thickness of the second adhesive layer (122). For example, when the target thickness of the second adhesive layer (122) is in the range of 10 ㎛ to 50 ㎛, the comma coater can be controlled to apply the silicone-based composition with a coating thickness in the range of 25 ㎛ to 175 ㎛. The method of applying the stabilized silicone composition onto the second base film (121) can also be performed by a spin coating method or a spraying method.

[0174] Next, the manufacturer can finally form the second adhesive layer (122) through a dry heat treatment and maturation curing process, and during this process, the thickness of the second adhesive layer (122) gradually decreases to reach the target thickness.

[0175] More specifically, the manufacturer performs a dry heat treatment on the second adhesive layer (122). The dry heat treatment is intended to remove the solvent within the silicone composition and simultaneously activate the crosslinking reaction, and may be performed using an infrared lamp or infrared / hot air combination drying, etc., and may be performed at a temperature ranging from 160°C to 180°C for 15 to 30 minutes.

[0176] In some cases, the dry heat treatment may be performed separately as primary, secondary, and tertiary dry heat treatments.

[0177] At this time, the primary dry heat treatment is performed to remove the solvent in the silicone composition and at the same time activate the crosslinking reaction, and can be performed using an infrared lamp or infrared / hot air combination drying, etc., and can be performed at a temperature in the range of 60°C to 80°C for 3 to 6 minutes.

[0178] Next, the secondary dry heat treatment is performed in the same manner as the primary dry heat treatment to remove the solvent within the silicone composition and simultaneously activate the crosslinking reaction. This can be performed using an infrared lamp or a combination of infrared and hot air drying, and can be performed at a higher temperature than the primary dry heat treatment for the same amount of time as the primary dry heat treatment. For example, the secondary dry heat treatment can be performed at a temperature ranging from 160°C to 180°C for 3 to 6 minutes.

[0179] Next, the third dry heat treatment is performed, similar to the first and second dry heat treatments, to remove the solvent within the silicone composition and simultaneously activate the crosslinking reaction. This can be performed using an infrared lamp or infrared / hot air combination drying, and can be performed at a higher temperature and for a longer time than the second dry heat treatment. For example, the third dry heat treatment can be performed at a temperature in the range of 190°C to 210°C for 9 to 18 minutes.

[0180] Here, the drying of the second adhesive layer (122) by gradually increasing the temperature during the first to third dry heat treatment processes is to prevent the second adhesive layer (122) from drying and hardening from the surface, thereby making it possible to easily remove air bubbles within the second adhesive layer (122). In addition, by gradually decreasing the temperature to room temperature after performing the third dry heat treatment, the second adhesive layer (122) can be implemented in a more stable state and with a uniform thickness.

[0181] Next, the manufacturer stabilizes and hardens the second adhesive layer (122) by aging it at 20°C to 30°C for 12 to 24 hours. That is, the second base film (121) and the second adhesive layer (122), which have become heated during the dry heat treatment process, are slowly cooled to 20°C to 30°C during a rest period, thereby stably completing the crosslinking reaction within the second adhesive layer (122) and at the same time ensuring the required physical properties of the second adhesive layer (122).

[0182] Next, the manufacturer attaches the second release film (123) containing fluorine on the second adhesive layer (122). The second release film (123) may contain fluorine to protect the second adhesive layer (122) including silicone having a spiral network structure and to facilitate separation from the second adhesive layer (122), and may have an adhesive strength in the range of 3 gf / 25 mm to 8 gf / 25 mm. At this time, if the adhesive strength of the second release film (123) is less than 3 gf / 25 mm, the second adhesive layer (122) may be naturally peeled off, and if the adhesive strength is greater than 8 gf / 25 mm, there is a problem that the second adhesive layer (122) may be damaged in the process of removing the second release film (123).

[0183] The manufacturer can manufacture the second tape (110) through the above-described process.

[0184]

[0185] The above first tape lamination step (S121) is a step in which the manufacturer removes the first release film (113) from the first tape (110) and brings the first adhesive layer (112) and the second base film (121) into surface contact to laminate the first tape (110) and the second tape (120).

[0186] Thereafter, the user removes the second release film (123) of the second tape (120) before the EMI shielding layer forming process, and attaches the adhesive tape (100) for a semiconductor manufacturing process according to an embodiment of the present invention by bringing the second adhesive layer (122) into contact with the lower surface of the semiconductor package (10) and the protruding electrode (11).

[0187]

[0188] Example 2

[0189]

[0190] A method (S100) for manufacturing an adhesive tape (100) for a semiconductor package manufacturing process according to a second embodiment of the present invention comprises a second tape preparation step (S112) and a second tape lamination step (S122).

[0191]

[0192] The second tape preparation step (S112) is a step of manufacturing a first tape (110) in which the first base film (111) including a plastic material or a metal material, the first adhesive layer (112) including an acrylic copolymer, and the first release film (113) including fluorine are sequentially laminated, and a third tape (130) in which the second base film (121) is formed on the third release film (131) by a metal deposition method, and a fourth tape (140) in which the second adhesive layer (122) including silicone having a spiral network structure and the second release film (123) including fluorine are sequentially laminated.

[0193]

[0194] First, the method for manufacturing the first tape (110) is the same as that of the first embodiment, so a detailed description is omitted.

[0195]

[0196] Meanwhile, the method for manufacturing the third tape (130) is performed by forming the second base film (121) on the third release film (131) by metal deposition. More specifically, the second base film (121) can be manufactured as the third tape (130) in the form of a transfer film of metal deposition by depositing aluminum (Al) or copper (Cu) on the third release film (131) by metal deposition. As the metal deposition method, a sputtering method or the like can be used, but is not limited thereto.

[0197] The third heteromorphic film (131) may have the same characteristics as the first heteromorphic film (113) and the second heteromorphic film (123).

[0198] In this case, it is preferable that the second base film (210) be deposited on the third release film (131) to have a thickness in the range of 1 ㎛ to 10 ㎛. A thickness in this range is advantageous when the size of the protruding electrode (11) is relatively large.

[0199]

[0200] Meanwhile, the method for manufacturing the fourth tape (140) is performed by forming the second adhesive layer (122) using the second release film (123) as a base film. Since the method for forming the second adhesive layer (122) on the second base film (121) in the first embodiment is the same as that in the first embodiment, a detailed description thereof will be omitted.

[0201]

[0202] The second tape laminating step (S122) is a step in which the manufacturer removes the first release film (113) from the first tape (110) and then brings the first adhesive layer (112) and the second base film (121) of the third tape (130) into surface contact to laminate the first tape (110) and the third tape (130), and then removes the third release film (131) from the third tape (130) and then brings the second base film (121) and the second adhesive layer (122) of the fourth tape (140) into surface contact to laminate the third tape (130) and the fourth tape (140).

[0203] Thereafter, the user removes the second release film (123) of the fourth tape (140) before the EMI shielding layer forming process, and attaches the adhesive tape (100) for a semiconductor manufacturing process according to an embodiment of the present invention by bringing the second adhesive layer (122) into contact with the lower surface of the semiconductor package (10) and the protruding electrode (11).

[0204]

[0205] As described above, the method (S100) for manufacturing an adhesive tape (100) for a semiconductor package manufacturing process according to an embodiment of the present invention manufactures the first tape (110) to the fourth tape (120) through individual manufacturing processes and then laminates them to manufacture the final product of the adhesive tape (100) for a semiconductor manufacturing process, thereby improving the overall process yield by enabling only the individual tapes in which a defect occurs to be discarded when a defect occurs in the manufacturing process of the first tape (110) to the fourth tape (140).

[0206]

[0207] As described above, the present invention has been described with reference to the embodiments illustrated in the drawings. However, these are merely exemplary, and it should be understood that various modifications and equivalent alternative embodiments are possible based on common knowledge in the art. Therefore, the true technical protection scope of the present invention is determined by the claims set forth below and based on the specific details of the invention described above.

[0208]

[0209] The present invention relates to an adhesive tape for a semiconductor package manufacturing process, and can be used in an industrial field related to a process for forming an EMI (Electro Magnetic Interference) shielding layer of a semiconductor package.

Claims

1. In an adhesive tape for a semiconductor package manufacturing process attached to the bottom surface of a semiconductor package on which a plurality of protruding electrodes are formed, First basal film; A first adhesive layer laminated on top of the first base film and containing an acrylic copolymer; A second base film, which is laminated on top of the first adhesive layer and includes a metal material so that the shape is deformed to correspond to the bottom topology of the semiconductor package and the deformed shape is maintained between processes; and A second adhesive layer laminated on top of the second base film and including silicone having a spiral network structure; Adhesive tape for semiconductor package manufacturing process including.

2. In the first paragraph, the first base film, An adhesive tape for a semiconductor package manufacturing process, characterized in that it contains a plastic material or a metal material.

3. In the second paragraph, the first base film, An adhesive tape for a semiconductor package manufacturing process, characterized in that it is formed of a single layer of polyethylene terephthalate, polyimide or polyolefin or a multilayer structure in which two or more layers are laminated, and has a thickness in the range of 10 ㎛ to 150 ㎛.

4. In the second paragraph, the first base film, 4.8 kgf / mm including at least 99 wt% aluminum (Al) 2 14.4 kgf / mm 2 A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 20 μm to 80 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 An adhesive tape for a semiconductor package manufacturing process, characterized by having a tensile strength in the range of 100 to 1000 µm, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 20 µm to 80 µm.

5. In the first paragraph, the first adhesive layer is An adhesive tape for a semiconductor package manufacturing process, characterized in that it comprises at least one of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer.

6. In the fifth paragraph, the first adhesive layer is At least one of a first adhesive composition comprising 25-30 parts by weight of a butyl acrylate - butyl methacrylate - methacrylic acid - methyl methacrylate - styrene copolymer and 70-75 parts by weight of ethyl acetate, and a second adhesive composition comprising 25-30 parts by weight of an acrylic acid - 2-ethylhexyl acrylate - 2-ethylhexyl methacrylate - glycidyl methacrylate copolymer, 50-55 parts by weight of toluene, and 15-20 parts by weight of ethyl acetate, and an epoxy-based curing agent are mixed to form the first adhesive composition. An adhesive tape for a semiconductor package manufacturing process characterized in that it is formed by applying it to a base film and then drying and curing it.

7. In the 6th paragraph, the first adhesive layer is An adhesive tape for a semiconductor package manufacturing process, characterized in that it is formed by mixing 80-120 parts by weight of the first adhesive composition and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film, and then drying and curing the mixture.

8. In the 7th paragraph, the first adhesive layer is An adhesive tape for a semiconductor package manufacturing process, characterized in that it is formed by mixing 40-60 parts by weight of the first adhesive composition, 40-60 parts by weight of the second adhesive composition, and 0.5-1.5 parts by weight of the epoxy-based curing agent, applying the mixture to the first base film, and then drying and curing the mixture.

9. In paragraph 5, The first adhesive layer has a thickness in the range of 100 ㎛ to 700 ㎛ and an adhesive strength of at least 500 gf / 25 mm, An adhesive tape for a semiconductor package manufacturing process, characterized in that the second adhesive layer has a thickness in the range of 10 ㎛ to 50 ㎛ and an adhesive strength in the range of 50 gf / 25 mm to 500 gf / 25 mm.

10. In paragraph 9, The thickness of the first adhesive layer decreases within a set thickness range as the size of the protruding electrode increases, and the thickness increases within a set thickness range as the spacing between the protruding electrodes increases. An adhesive tape for a semiconductor package manufacturing process, characterized in that the second adhesive layer has a thickness that increases within a set thickness range as the size of the protruding electrode increases, and a thickness that decreases within a set thickness range as the spacing between the protruding electrodes increases.

11. In the first paragraph, the second base film, An adhesive tape for a semiconductor package manufacturing process, characterized in that it has a thickness in the range of 1 ㎛ to 10 ㎛.

12. In the first paragraph, the second base film, 4.8 kgf / mm including at least 99 wt% aluminum (Al) 2 14.4 kgf / mm 2 A tensile strength of 8 kgf / mm, an elongation of 6.4% to 19.2%, and a thickness of 10 μm to 35 μm, or comprising at least 99 wt% of copper (Cu). 2 31.2 kgf / mm 2 An adhesive tape for a semiconductor package manufacturing process, characterized by having a tensile strength in the range of 10 μm to 35 μm, an elongation in the range of 3.2% to 14.4%, and a thickness in the range of 10 μm to 35 μm.

13. In the first paragraph, the second adhesive layer is An adhesive tape characterized by containing a trimethylated silica-dimethyl siloxane copolymer.

14. A first tape preparation step for manufacturing a first tape in which a first base film including a plastic material or a metal material, a first adhesive layer including an acrylic copolymer, and a first release film including fluorine are sequentially laminated, and a second tape in which a second base film including a metal material, a second adhesive layer including silicone having a spiral network structure, and a second release film including fluorine are sequentially laminated; and A first tape lamination step of removing the first release film from the first tape and bringing the first adhesive layer and the second base film into surface contact to laminate the first tape and the second tape; A method for manufacturing an adhesive tape for a semiconductor package manufacturing process including:

15. A second tape preparation step for manufacturing a first tape in which a first base film including a plastic material or a metal material, a first adhesive layer including an acrylic copolymer, and a first release film including fluorine are sequentially laminated, a third tape in which the second base film is formed on a third release film by a metal deposition method, and a fourth tape in which a second adhesive layer including silicone having a spiral network structure and a second release film including fluorine are sequentially laminated; and A second tape lamination step of laminating the first tape and the third tape by removing the first release film from the first tape and then bringing the first adhesive layer and the second base film of the third tape into surface contact, and laminating the third tape and the fourth tape by removing the third release film from the third tape and then bringing the second base film and the second adhesive layer of the fourth tape into surface contact; A method for manufacturing an adhesive tape for a semiconductor package manufacturing process including: