A method for forming a gallium nitride layer on a wafer substrate

Abstract

The present invention relates to the field of semiconductor. More particularly, the present invention relates to a method for forming a gallium nitride layer on a wafer substrate. The method generally comprises the steps of forming a gallium nitride nucleation layer on the wafer substrate, treating the gallium nitride nucleation layer with a sequential heating process so as to improve recrystallization of gallium nitride and enhancing formation of gallium nitride islands on the wafer substrate, and further forming the gallium nitride layer on the treated gallium nitride nucleation layer. The method in the present invention is capable of forming a gallium nitride wafer substrate with a reduced formation of defect and an improved surface smoothness.