Ingot growing apparatus

Abstract

Disclosed is an ingot growing apparatus (100). An ingot growing apparatus (100) according to an embodiment of the present invention includes a growth furnace (110) in which a main crucible (120) is disposed, wherein the main crucible (120) accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor (130) formed to surround an outer surface of the main crucible (120) and rotated in the same direction as the main crucible (120), and a preliminary melting unit (160) which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible (120), wherein the preliminary melting unit (160) includes a preliminary crucible (170) which accommodates the molten silicon, and the preliminary crucible (170) supplies the molten silicon contained in the preliminary crucible (170) to the main crucible (120) in a direction in which the molten silicon contained in the main crucible (120) rotates. FIG. 2

Description

Ingot growth device

[0001] The present invention relates to an ingot growth device.

[0002] Single crystal silicon is used as the basic material for most semiconductor components, and these materials are manufactured into single crystals with high purity, and one of these manufacturing methods is the Czochralski process.

[0003] As illustrated in Fig. 1, the Czochralski crystallization method involves placing a solid silicon material in a crucible (30) within a chamber (10), heating the crucible (30) using a heater (20), and melting the silicon. Then, when a single crystal seed (S) is pulled upwards through a wire (W) while in contact with the molten silicon and simultaneously rotating, an ingot having a predetermined diameter is grown.

[0004] One of these Czochralski methods is the continuous growth Czochralski method (CCz). This method continuously grows the ingot by continuously injecting solid polysilicon or molten silicon into the crucible to replenish the consumed molten silicon.

[0005] As illustrated in Fig. 1, when silicon is supplemented to the first convection region (A1) where the single crystal of the ingot (I) grows, there is a problem that the single crystal yield of the ingot is reduced due to the temperature change of the first convection region (A1).

[0006] That is, there is a need for research on supplying silicon to the second convection zone (A2) adjacent to the side of the crucible (30) so as to minimize the temperature change in the first convection zone (A1).

[0007] According to an embodiment of the present invention, an ingot growth device is provided that minimizes the change in temperature for growing a single crystal of an ingot during a process in which molten silicon is supplied to a crucible, thereby increasing the yield of a single crystal of the ingot.

[0008] An ingot growth device according to one aspect of the present invention comprises: a growth furnace having a main crucible disposed therein to receive molten silicon for growing an ingot and to rotate clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise; a susceptor formed to surround an outer surface of the main crucible and to rotate in the same direction as the main crucible; and a pre-melting unit that receives a solid silicon material, melts it into molten silicon, and supplies the molten silicon to the main crucible, wherein the pre-melting unit is provided with a pre-crucible that receives the molten silicon, and the pre-melting unit can supply the molten silicon contained in the pre-crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

[0009] At this time, the molten silicon contained in the preliminary crucible can be provided to the main crucible at a range of -20° to +70° from the tangential direction of the rotation direction of the molten silicon contained in the main crucible.

[0010] At this time, the preliminary crucible may include a body having a side wall with an open upper side and an opening formed therein; and a beak extending in the tangential direction from the side wall of the body.

[0011] At this time, the end of the beak of the preliminary crucible can be formed to be adjacent to the inclined surface of the main crucible or the boundary line where the molten silicon comes into contact with the inclined surface.

[0012] At this time, the molten silicon contained in the main crucible is divided into a first convection zone in which the ingot grows and a second convection zone surrounding the first convection zone, and the end of the beak of the spare crucible can be formed to be placed adjacent to the second convection zone, which is furthest from the first convection zone.

[0013] At this time, the spare crucible is formed to be movable between a first position where the molten silicon is contained in the body of the spare crucible and a second position where the molten silicon contained in the body flows into the main crucible, and the spare melting unit may be provided with a spare crucible moving module that moves the spare crucible between the first position and the second position.

[0014] At this time, the preliminary melting section may be provided with a preliminary susceptor formed to support the preliminary crucible.

[0015] At this time, the spare crucible moving module may include a support member that supports the spare susceptor so that the beak of the spare crucible facing the main crucible can be rotated to incline; and a lifter that raises or lowers one side of the body of the spare crucible.

[0016] At this time, the support member may be placed apart from the main crucible so as not to interfere with the main crucible.

[0017] At this time, the support member is formed in a pin shape extending upward, the upper surface of the support member is formed in a curved surface, and a support groove connected to the support member can be formed on the lower surface of the preliminary susceptor to accommodate the upper surface of the support member.

[0018] At this time, the support groove may be formed so as not to overlap with the main crucible when viewed from the upper side of the main crucible.

[0019] At this time, the end of the beak of the preliminary crucible can be formed so as to be adjacent to the upper surface of the main crucible when viewed from the upper side of the main crucible.

[0020] At this time, the opening of the preliminary crucible may be formed at the lowermost end of the central portion of the side wall of the preliminary crucible, and the beak of the preliminary crucible may be formed to be positioned corresponding to the opening.

[0021] According to another aspect of the present invention, an ingot growth device includes a growth furnace having a main crucible disposed therein to receive molten silicon for growing an ingot and to rotate clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise; a susceptor formed to surround an outer surface of the main crucible and to rotate in the same direction as the main crucible; and a pre-melting unit that receives a solid silicon material, melts it into molten silicon, and supplies the molten silicon to the main crucible, wherein the pre-melting unit is provided with a pre-crucible for receiving the molten silicon, and the pre-melting unit can be arranged to supply the molten silicon contained in the pre-crucible to the main crucible in the rotational direction of the main crucible.

[0022] In an ingot growth device according to an embodiment of the present invention, molten silicon accommodated in a preliminary crucible is supplied in the rotational direction of the molten silicon accommodated in the main crucible, thereby minimizing temperature changes in the molten silicon accommodated in the main crucible, thereby increasing the yield of single crystals of the ingot.

[0023] Additionally, since the spare crucible moving module is positioned apart from the main crucible, the spare crucible moving module can move the spare crucible without interfering with the main crucible.

[0024] Figure 1 is a schematic drawing showing a conventional ingot growth device.

[0025] FIG. 2 is a schematic drawing of an ingot growth device according to an embodiment of the present invention.

[0026] Figure 3a is a drawing showing the main crucible and the preliminary melting section of Figure 2 in detail.

[0027] Figure 3b is a drawing showing the direction in which molten silicon is supplied.

[0028] FIG. 3c is a drawing showing the direction in which molten silicon is supplied according to various embodiments of the present invention.

[0029] Figure 4 is a perspective view showing the preliminary crucible of Figure 3a.

[0030] Figure 5 is a drawing showing a spare crucible moving module for moving a spare crucible.

[0031] Figure 6 is a drawing showing the preliminary crucible in the first position.

[0032] Figure 7 is a drawing showing the spare crucible in the second position.

[0033] 100: Ingot growth device 110: Growth furnace

[0034] 120: Main Crucible 130: Susceptor

[0035] 160: Preliminary melting zone 170: Preliminary crucible

[0036] 173: Beak

[0037] The words and terms used in this specification and claims should not be construed as limited to their ordinary or dictionary meanings, but should be interpreted in a way that is consistent with the technical idea of ​​the present invention, in accordance with the principles by which the inventor can define terms and concepts in order to best explain his or her invention.

[0038] Therefore, the embodiments described in this specification and the configurations illustrated in the drawings correspond to a preferred embodiment of the present invention, and do not represent all of the technical ideas of the present invention, so there may be various equivalents and modified examples that can replace the configuration at the time of filing of the present invention.

[0039] In this specification, terms such as “include” or “have” are intended to describe the presence of a feature, number, step, operation, component, part or combination thereof described in the specification, but should be understood not to exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0040] When a component is said to be "in front of," "behind," "above," or "below" another component, this includes not only being placed "in front of," "behind," "above," or "below" the other component in direct contact with it, but also if there is another component intervening therebetween. Furthermore, when a component is said to be "connected" to another component, this includes not only being directly connected to one another, but also being indirectly connected to one another, unless there are special circumstances.

[0041] Hereinafter, an ingot growth device according to an embodiment of the present invention will be described with reference to the drawings. In this specification, when describing an ingot growth device according to an embodiment of the present invention, components unrelated to the content of the invention will not be depicted in detail or will be omitted for simplicity of the drawings, and the ingot growth device according to the present invention will be described with a focus on contents related to the spirit of the invention.

[0042] In this specification, the arrow direction of the Z-axis refers to the upward direction of the growth path. The downward direction refers to the direction opposite to the upward direction.

[0043] FIG. 2 is a schematic drawing of an ingot growth device according to an embodiment of the present invention.

[0044] Referring to FIG. 2, an ingot growth device (100) according to an embodiment of the present invention may include a growth furnace (110), a main crucible (120), and a preliminary melting unit (160).

[0045] The above-mentioned growth furnace (110) is provided with an internal space (110a) maintained in a vacuum state, and is formed so that an ingot (I) is grown in the internal space (110a). A main crucible (120), which will be described later, is placed in the internal space (110a).

[0046] The above-mentioned growth reactor (110) is equipped with a vacuum pump (not shown) and an inert gas supply unit (not shown). The vacuum pump can maintain the internal space (110a) in a vacuum atmosphere. In addition, the inert gas supply unit supplies an inert gas to the internal space (110a). The inert gas may be, for example, argon (Ar).

[0047] The above main crucible (120) is accommodated in the internal space (110a) of the growth furnace (110). The above main crucible (120) can accommodate molten silicon (M1). In addition, the above main crucible (120) is generally formed in a reverse dome shape. In addition, the above main crucible (120) is not limited to being formed in a reverse dome shape, and may be formed in various shapes, such as a cylindrical shape.

[0048] And, the main crucible (120) is made of quartz. However, the main crucible (120) is not limited to being made of quartz, and may be made of various materials that have heat resistance at temperatures of approximately 1400°C or higher and can withstand rapid temperature changes.

[0049] And, when the single crystal seed (S) is in contact with the molten silicon (M1) contained in the main crucible (120), and the wire (W) connected to the upper side of the growth furnace (110) pulls the single crystal seed (S) upward (Z-axis), an ingot (I) having a predetermined diameter is grown along the direction in which the ingot (I) is pulled (Z-axis).

[0050] The susceptor (130) surrounds the outer surface of the main crucible (120). The susceptor (130) supports the main crucible (120). The inner surface of the susceptor (130) has a shape corresponding to the outer surface of the main crucible (120). For example, if the main crucible (120) has an inverted dome shape, the susceptor (130) also has an inverted dome shape. The susceptor (130) is made of graphite. In addition, the susceptor (130) is not limited to being made of graphite, and may be made of various materials that are heat-resistant and have conductive properties.

[0051] Accordingly, even if the main crucible (120) is made of quartz material and is deformed at high temperatures, the susceptor (130) supports the main crucible (120) by surrounding it so that the main crucible (120) maintains a state in which it receives the molten silicon (M1).

[0052] In addition, a susceptor support (150) that supports the susceptor (130) is arranged on the lower surface (112) of the growth furnace (110). The upper end of the susceptor support (150) has a shape corresponding to the lower end of the susceptor (130). In addition, when the susceptor support (150) supports the susceptor (130) at the lower side of the growth furnace (110), the susceptor support (150) rotates in the same direction as the susceptor (130). Accordingly, when the main crucible (120) receives the molten silicon (M1), the main crucible (120) rotates in the same direction as the susceptor (130).

[0053] In addition, the growth furnace (110) is provided with a driving unit (not shown) that provides rotational force to rotate the susceptor support unit (150). The susceptor support unit (150) is rotatably connected to the driving unit. When the driving unit receives power and provides rotational force to the susceptor support unit (150), the main crucible (120) rotates in the same direction as the susceptor (130).

[0054] Additionally, the growth furnace (110) is equipped with a heater (not shown) that heats the susceptor (130). The heater includes a coil that receives power and generates a magnetic field, and a shield that surrounds the coil.

[0055] The coil is formed to surround the outer surface of the susceptor. The coil receives power and generates a magnetic field. In addition, the coil generates a current in the susceptor (130) through electromagnetic induction by the magnetic field. At this time, the current generated in the susceptor (130) is converted into thermal energy. Accordingly, the heater heats the susceptor (130). The heat of the susceptor (130) is thermally conducted to the main crucible (120), and the susceptor (130) heats the main crucible (120).

[0056] The shield supports the coil so that the coil is maintained in a certain shape. The shield is made of ceramic. The shield blocks the coil from being exposed to the internal space (110a) of the growth furnace (110). Accordingly, the shield blocks the coil from being exposed to the internal space (110a) of the growth furnace (110), thereby preventing an arc discharge due to a plasma phenomenon in the vacuum state or an arc discharge from being generated when the coil comes into contact with an inert gas (e.g., argon) present in the internal space (110a) when power is supplied to the coil to form a magnetic field.

[0057] In addition, the heater is not limited to being implemented by an induction heating method that generates a magnetic field, but may be implemented by a resistance heating method that directly generates heat by receiving power.

[0058] The above-mentioned preliminary melting unit (160) receives a solid silicon material and melts it into molten silicon. In addition, the above-mentioned preliminary melting unit (160) is equipped with a preliminary crucible (170) for receiving the molten silicon.

[0059] In addition, the preliminary crucible (170) is made of quartz. However, the preliminary crucible (170) is not limited to being made of quartz, and may be made of various materials that have heat resistance at temperatures of approximately 1400°C or higher and can withstand rapid temperature changes.

[0060] And, the above-mentioned spare crucible (170) supplies the molten silicon to the above-mentioned main crucible (120). The above-mentioned spare crucible (170) will be described in detail later with reference to the drawings.

[0061] Additionally, the preliminary melting unit (160) is provided with a preliminary susceptor (180) formed to support the preliminary crucible (170).

[0062] In addition, the above-mentioned spare susceptor (180) is made of graphite material. In addition, the above-mentioned spare susceptor (180) is not limited to being made of graphite material, and may be made of various materials that are heat-resistant and have conductive properties.

[0063] Additionally, a quantitative supply unit (not shown) is provided on the outside of the growth furnace (110) to supply the solid silicon material to the preliminary crucible (170).

[0064] The above quantitative supply unit measures the weight of the solid silicon material. Accordingly, the quantitative supply unit supplies a fixed amount of the solid silicon material to the reserve crucible (170), thereby allowing the amount of the molten silicon contained in the reserve crucible (170) to be predicted.

[0065] FIG. 3a is a drawing showing the main crucible and the preliminary melting section of FIG. 2 in detail, FIG. 3b is a drawing showing the direction in which molten silicon is supplied, FIG. 3c is a drawing showing the direction in which molten silicon is supplied according to various embodiments of the present invention, and FIG. 4 is a perspective view showing the preliminary crucible of FIG. 3a.

[0066] Referring to FIGS. 3A to 3C and FIG. 4, the main crucible (120) is rotated clockwise or counterclockwise (①). In addition, the spare crucible (170) is arranged to supply molten silicon contained in the spare crucible (170) to the main crucible (120) in the rotational direction (①) of the main crucible (120).

[0067] In addition, according to an embodiment of the present invention, the molten silicon contained in the main crucible (120) is rotated in the same direction as the rotation direction (①) of the main crucible (120). And, the spare crucible (170) supplies the molten silicon contained in the spare crucible (170) to the main crucible (120) in the rotation direction (①) of the molten silicon contained in the main crucible (120).

[0068] The above-mentioned preliminary crucible (170) is provided with a body (171) with an open upper side and a beak (173) extending from the body (171).

[0069] The above body (171) is formed in a roughly semi-cylindrical shape. The body (171) is provided with a side wall (172) in which an opening (172a) is formed. The opening (172a) of the body (171) is formed at the lowermost end of the central portion of the side wall (172) of the body (171). For example, the diameter of the opening (172a) is approximately 10 mm, but is not limited thereto and may be of various sizes.

[0070] The above beak (173) extends from the side wall (172) of the body (171). In addition, the beak (173) is formed to be positioned corresponding to the opening (172a). Accordingly, the molten silicon contained in the body (171) passes through the opening (172a) and is guided and moved by the beak (173).

[0071] The end (173a) of the above-mentioned beak (173) is formed to be adjacent to the inner inclined surface (122) of the main crucible (120) or the boundary line (122a) where the molten silicon (M1) comes into contact with the inclined surface (122).

[0072] In addition, according to an embodiment of the present invention, the molten silicon (M1) contained in the main crucible (120) is divided into a first convection region (A1) in which the ingot (I) grows and a second convection region (A2) surrounding the first convection region (A1). At this time, the end portion (173a) of the beak (173) is formed to be adjacent to the second convection region (A2) which is furthest from the first convection region (A1).

[0073] In addition, the end (173a) of the beak (173) is formed to be adjacent to the upper surface (121) of the main crucible (120) when viewed from the upper side of the main crucible (120) as shown in FIG. 3a.

[0074] Meanwhile, when the susceptor (130, see Fig. 2) is rotated clockwise or counterclockwise (①), the main crucible (120) is rotated clockwise or counterclockwise (①) in the same direction as the susceptor (130, see Fig. 2). In addition, the molten silicon (M1) contained in the main crucible (120) is also rotated clockwise or counterclockwise (①).

[0075] According to an embodiment of the present invention, the beak (173) is formed to be parallel to the tangential direction (②) of the clockwise or counterclockwise direction (①) in which the molten silicon (M1) in the main crucible (120) rotates. That is, the beak (173) extends from the side wall (172) of the body (171) in the tangential direction (②). The beak (173) connects the interior of the main crucible (120) closest to the upper surface (121) of the spare crucible (170) and the main crucible (120), thereby preventing the molten silicon in the spare crucible (170) from splashing out of the main crucible (120) and preventing the molten silicon from generating waves in the temperature of single crystal growth of the ingot (I) and the molten silicon (M1) in which the ingot (I) grows.

[0076] In addition, the length of the beak (173) is determined according to the distance between the main crucible (120) and the preliminary melting part (160). In addition, the length of the beak (173) can be determined according to the length of the inner diameter of the main crucible (120).

[0077] Accordingly, the reserve crucible (170) supplies the molten silicon (M1) in the reserve crucible (170) to the main crucible (120) in the tangential direction (②) of the clockwise or counterclockwise direction (①) in which the molten silicon (M1) in the main crucible (120) rotates.

[0078] In addition, the molten silicon in the reserve crucible (170) supplied to the main crucible (120) naturally joins the molten silicon (M1) in the main crucible (120) that is rotated clockwise or counterclockwise (①), thereby preventing the molten silicon from splashing.

[0079] In addition, according to various embodiments of the present invention, as illustrated in FIG. 3b, the molten silicon contained in the preliminary crucible (170) can be provided to the main crucible (120) in a range of -20°(α) to +70°(β) in a tangential direction (②) of the direction (①) in which the molten silicon contained in the main crucible (120) rotates. Here, the +70°(β) is an angle between the tangential direction of the outer surface of the ingot (I) and the tangential direction (②) of the direction in which the molten silicon (M1) rotates, when the diameter (R) of the main crucible (120) is approximately 657 mm and the diameter (D1) of the ingot (I) is 214 mm.

[0080] When the molten silicon contained in the above-mentioned spare crucible (170) is supplied to the main crucible (120) at an angle deviating from the -20°(α) in the tangential direction (②), there is a problem that the molten silicon contained in the above-mentioned spare crucible (170) splashes out of the main crucible (120). On the other hand, when the molten silicon contained in the above-mentioned spare crucible (170) is supplied to the main crucible (120) at an angle deviating from the +70°(β) in the tangential direction (②), there is a problem that the molten silicon contained in the above-mentioned spare crucible (170) causes waves to be generated in the molten silicon (M1) on which the ingot (I) grows. That is, the molten silicon contained in the preliminary crucible (170) is provided to the main crucible in a range of -20°(α) to +70°(β) in the tangential direction (②) of the direction (①) in which the molten silicon contained in the main crucible rotates, thereby preventing the molten silicon (M1) in which the ingot (I) grows from being splashed out of the main crucible (120).

[0081] In addition, according to various embodiments of the present invention, as illustrated in FIG. 3c, the molten silicon contained in the preliminary crucible (170) can be provided to the main crucible in a range of -20°(α) to +61°(β) in a tangential direction (②) of the direction (①) in which the molten silicon contained in the main crucible rotates. Here, the +61°(β) is an angle between the tangential direction of the outer surface of the ingot (I') and the tangential direction (②) of the direction in which the molten silicon (M1) rotates, when the diameter (R) of the main crucible (120) is approximately 657 mm and the diameter (D2) of the ingot (I') is 300 mm.

[0082] In addition, the end (173a) of the beak (173) is formed to be adjacent to the upper surface (121) of the main crucible (120) when viewed from the upper side of the main crucible (120), as shown in FIG. 3a. Accordingly, the beak (173) supplies the molten silicon from the position furthest from the ingot (I) among the main crucibles (120).

[0083] In this way, the reserve crucible (170) supplies the molten silicon to the main crucible (120) to minimize the temperature change in the region where the ingot (I) grows, thereby increasing the yield of the single crystal of the ingot (I).

[0084] Meanwhile, the body (171) is formed so that the gap between the inner surfaces that are positioned opposite to each other gradually decreases. Accordingly, the body (171) allows the molten silicon to smoothly move through the opening (172a) while also receiving a certain amount or more on the inner surface of the body (171), thereby preventing the molten silicon in the preliminary crucible (170) from rapidly solidifying.

[0085] In addition, according to various embodiments of the present invention, the body (171) may be formed in a shape in which the gap between the inner surfaces facing each other is constantly reduced, for example, in a V-shaped cross-section shape.

[0086] At this time, as shown in FIG. 3a, the preliminary susceptor (180) is provided with a first support member (182) that supports the body (171) and a second support member (183) that supports the beak (173).

[0087] The above first support member (182) is formed as a portion that protrudes from the side wall (172) toward the main crucible (120) while supporting the body (171).

[0088] A support groove (182a, 182b) to be described later is formed on the protruding portion of the first support member (182). When viewed from above the main crucible (120), the support groove (182a, 182b) does not overlap with the main crucible (120).

[0089] Additionally, the preliminary melting unit (160) is equipped with a preliminary heater (161) that heats the preliminary susceptor (180) by electromagnetic induction.

[0090] The above-described preliminary heater (161) is formed in a coil shape that receives power and generates a magnetic field. The preliminary heater (161) is formed to surround the preliminary crucible (170) and the preliminary susceptor (180). The preliminary heater (161) generates current in the preliminary susceptor (180) through electromagnetic induction by the magnetic field. At this time, the current generated in the preliminary susceptor (180) is converted into thermal energy. Accordingly, the preliminary heater (161) heats the preliminary susceptor (180). The heat of the preliminary susceptor (180) is thermally conducted to the preliminary crucible (170), and the preliminary susceptor (180) heats the preliminary crucible (170).

[0091] FIG. 5 is a drawing showing a spare crucible moving module for moving a spare crucible, FIG. 6 is a drawing showing a spare crucible in a first position, and FIG. 7 is a drawing showing a spare crucible in a second position.

[0092] The above-mentioned spare crucible (170) is provided so as to be rotatable between a first position where the molten silicon (M2) is contained and a second position where the molten silicon (M2) flows into the main crucible (120).

[0093] At this time, when the spare crucible (170) is placed at the first position, as shown in Fig. 6, the spare crucible (170) is tilted at a first angle (θ1). And, when the spare crucible (170) is placed at the second position, as shown in Fig. 7, the spare crucible (170) is tilted at a second angle (θ2).

[0094] In order for the above-mentioned spare crucible (170) to rotate between the first position and the second position, a spare crucible moving module (190) for tilting the spare crucible (120) is provided on the lower side of the above-mentioned spare susceptor (180).

[0095] The above-mentioned spare crucible moving module (190) is provided with a support member (191) that supports the spare susceptor (180) and a lifter (192) that raises or lowers one side of the body (171) of the spare crucible (170).

[0096] At this time, the support member (191) supports the preliminary susceptor (180) so that the beak (173) of the preliminary crucible (170) facing the main crucible (120) can be tilted and rotated. In addition, the support member (191) is formed in a pin shape extending upward. In addition, the upper surface of the support member (191) is formed in a curved surface.

[0097] Meanwhile, on the lower surface of the first support portion (182) of the preliminary susceptor (180), a support groove (182a) is formed to be connected to the support member (191) so as to accommodate the upper surface of the support member. As shown in Fig. 3a, the support grooves (182a) are provided in plurality. In addition, the support members (191) are provided in plurality so as to be connected to each of the plurality of support grooves (182a, 182b, see Fig. 3a).

[0098] The above lifter (192) is provided to support the preliminary susceptor (180) at a point spaced apart from the support groove (182a). Accordingly, the plurality of support members (191) and the lifter (192) support the preliminary susceptor (180) at three points, thereby stably supporting the preliminary susceptor (180) and the preliminary crucible (170).

[0099] At this time, the lifter (192) is equipped with a cylinder (192a), a piston (192b), and an elevation driving unit (192c) as shown in FIG. 5.

[0100] The cylinder (192a) is provided with a piston receiving space for receiving the piston (192b). The piston (192b) can move in the vertical direction (Z-axis) along the piston receiving space. The upper surface of the piston (192b) is formed as a curved surface.

[0101] The above-mentioned lifting drive unit (192c) provides driving force so that the piston (192b) moves up and down. At this time, the lifting drive unit (192c) may provide driving force to the piston (192b) in a hydraulic manner or may be implemented in a structure of a motor and gear to provide driving force to the piston (192b). In addition, the driving force may be provided to the piston (192b) in various structures and methods.

[0102] When the piston (192b) moves upward (Z-axis), the second support portion (183) of the susceptor (180) tilts toward the main crucible (120) while the spare susceptor (180) is supported by the support member (191). In addition, since the spare crucible (170) is supported by the spare susceptor (180), the beak (173) tilts toward the main crucible (120). Accordingly, the molten silicon (M2) moves along the beak (173) and flows down to the main crucible (120).

[0103] When the molten silicon (M2) is supplied to the main crucible (120) in the required amount, the piston (192b) moves downward. Then, while the spare crucible (170) is supported by the support member (191), the beak (173) tilts upward away from the main crucible (120). Accordingly, the spare crucible (170) stops supplying the molten silicon (M2) to the main crucible (120).

[0104] In addition, as illustrated in FIG. 3a, the support grooves (182a, 182b) are formed so as not to overlap with the main crucible (120) when viewed from the upper side of the main crucible (120). Accordingly, the support member (191) connected to the support grooves (182a, 182b) is arranged spaced apart from the main crucible (120) so as not to interfere with the main crucible (120) and the susceptor (130).

[0105] Although the embodiments of the present invention have been described, the spirit of the present invention is not limited to the embodiments presented in this specification, and those skilled in the art who understand the spirit of the present invention will be able to easily propose other embodiments by adding, changing, deleting, or adding components within the scope of the same spirit, but this will also be considered to fall within the spirit of the present invention.

Claims

1. A growth furnace having a main crucible disposed therein that receives molten silicon to grow an ingot and rotates clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise; A susceptor formed to surround the outer surface of the main crucible and rotated in the same direction as the main crucible; and It includes a pre-melting section that receives a solid silicon material, melts it into molten silicon, and supplies the molten silicon to the main crucible. The above preliminary melting section is provided with a preliminary crucible for receiving the molten silicon. An ingot growth device in which the above-mentioned spare crucible supplies molten silicon contained in the above-mentioned spare crucible to the above-mentioned main crucible in the direction in which the molten silicon contained in the above-mentioned main crucible rotates.

2. In paragraph 1, An ingot growth device in which the molten silicon contained in the above-mentioned preliminary crucible is provided to the above-mentioned main crucible at an angle ranging from -20° to +70° in a tangential direction relative to the direction in which the molten silicon contained in the above-mentioned main crucible rotates.

3. In paragraph 1, The above-mentioned preliminary crucible is, A body having an open upper side and a side wall with an opening formed therein; and An ingot growth device comprising a beak extending in the tangential direction from the side wall of the body.

4. In paragraph 2, An ingot growth device, wherein the end of the beak of the above-mentioned preliminary crucible is formed so as to be adjacent to the inclined surface of the main crucible or the boundary line where the molten silicon comes into contact with the inclined surface.

5. In paragraph 2, The molten silicon contained in the main crucible is divided into a first convection zone where the ingot grows and a second convection zone surrounding the first convection zone, An ingot growth device, wherein the end of the beak of the above-mentioned preliminary crucible is formed so as to be positioned adjacent to the second convection zone, which is furthest from the first convection zone.

6. In paragraph 2, The above-mentioned spare crucible is formed to be movable between a first position where the molten silicon is contained in the body of the above-mentioned spare crucible and a second position where the molten silicon contained in the body flows into the main crucible, An ingot growth device, wherein the preliminary melting section is provided with a preliminary crucible moving module for moving the preliminary crucible between the first position and the second position.

7. In paragraph 6, An ingot growth device, wherein the preliminary melting section is provided with a preliminary susceptor formed to support the preliminary crucible.

8. In paragraph 7, The above-mentioned spare crucible moving module is, A support member that supports the spare susceptor so that the beak of the spare crucible facing the main crucible can be rotated at an angle; and An ingot growth device comprising a lifter for raising or lowering one side of the body of the above-mentioned preliminary crucible.

9. In paragraph 8, An ingot growth device, wherein the support member is placed apart from the main crucible so as not to interfere with the main crucible.

10. In paragraph 8, The above support member is formed in a pin shape extending upward, The upper surface of the above support member is formed into a curved surface, An ingot growth device, wherein a support groove is formed on the lower surface of the above-mentioned preliminary susceptor and is connected to the support member so as to accommodate the upper surface of the support member.

11. In paragraph 10, An ingot growth device in which the above support groove is formed so as not to overlap the main crucible when viewed from the upper side of the main crucible.

12. In paragraph 3, An ingot growth device, wherein the end of the beak of the above-mentioned preliminary crucible is formed so as to be adjacent to the upper surface of the above-mentioned main crucible when viewed from the upper side of the above-mentioned main crucible.

13. In paragraph 3, The above opening of the above-mentioned preliminary crucible is formed at the lowermost part of the central portion of the side wall of the above-mentioned preliminary crucible, An ingot growth device, wherein the beak of the above-mentioned preliminary crucible is formed to be positioned corresponding to the opening.

14. A growth furnace having a main crucible disposed therein for receiving molten silicon to grow an ingot and rotating clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise; A susceptor formed to surround the outer surface of the main crucible and rotated in the same direction as the main crucible; and It includes a pre-melting section that receives a solid silicon material, melts it into molten silicon, and supplies the molten silicon to the main crucible. The above preliminary melting section is provided with a preliminary crucible for receiving the molten silicon. An ingot growth device, wherein the above-mentioned spare crucible is arranged to supply molten silicon contained in the above-mentioned spare crucible to the above-mentioned main crucible in the rotational direction of the above-mentioned main crucible.