Semiconductor laser element and method for manufacturing the same

Abstract

A semiconductor laser element (100) includes an n-side semiconductor layer (2), an active layer (3), and a p-side semiconductor layer (4). A least a portion of the p-side semiconductor layer (4) forms a ridge projecting upward. The p-side semiconductor layer (4) includes an undoped first part (41), an electron barrier layer (42) containing a p-type impurity and having a larger band gap energy than the first part (41), and a second part (43) having at least one p-type semiconductor layer. The lower end of the ridge is positioned at the first part (41). Figure 1.