Heating device and semiconductor processing apparatus
Patent Information
- Application Number
- MYPI2022006631
- Authority / Receiving Office
- MY · MY
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-05-26
- Filing Date
- 2021-05-26
- Publication Date
- 2026-08-21
- Estimated Expiration
- 2041-05-26
AI Technical Summary
In the chemical vapor deposition process, the film formation uniformity of the wafer is poor, resulting in high temperature in the edge area of the wafer and low temperature in the middle area, resulting in uneven film thickness.
Design a heating device, including a base, a heating component and a cooling mechanism. A first gas channel is provided at the edge of the heating component for blowing air, and an installation space is formed between the base and the heating component. A cooling mechanism is provided to cool the heating component. edge area to ensure uniform temperature distribution of the workpiece to be processed.
By evenly distributing the heat-conducting gas and cooling the edges of the heating components, the edge temperature of the workpiece to be processed is prevented from being high and the temperature in the middle area is low, the uniformity of film formation is improved, and the film thickness in different areas is avoided.
Abstract
Description
Heating device and semiconductor processing equipment TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a heating device and semiconductor processing equipment. BACKGROUND
[0002] Chemical vapor deposition (CVD) is a technology that uses heating or plasma and other energy to cause chemical reactions between experimental substances or with corresponding gases in a reactor to generate another gaseous compound, which is then transported to a corresponding area with a different temperature from the source area of the reaction substance to deposit and form a solid deposit.
[0003] In the process of CVD processing of the wafer 10, the wafer 10 is usually placed on a heater 20 as shown in FIG. 1, which is provided with a heating disc 21. The middle region of the heating disc 21 is provided with a vacuum suction hole, and the vacuum suction hole is in communication with a vacuum pipeline 22. The wafer 10 can be adsorbed on the heating disc 21 through the vacuum suction hole. In the process of heating the wafer 10 by the heating disc 21, since the gas pressure in the reaction chamber is usually greater than the gas pressure in the vacuum pipeline 22, the gas pressure between the edge region of the wafer 10 and the heating disc 21 is greater, and the gas pressure between the middle region of the wafer 10 and the heating disc 21 is smaller, so that the heat-conducting gas between the wafer 10 and the heating disc 21 has a greater pressure at the edge region of the wafer 10 and a smaller pressure at the middle region of the wafer 10. Therefore, within a certain period of time, the wafer has a temperature distribution that is uneven, with a high temperature at the edge region and a low temperature at the middle region. When the temperature at the edge region of the wafer 10 reaches the process temperature, the temperature at the middle region of the wafer 10 has not yet reached the process temperature. Since the temperature has a great influence on the film formation rate of the wafer 10, generally the higher the temperature, the faster the film formation rate, so that the film thickness at the edge region of the wafer 10 is greater than the film thickness at the middle region, resulting in different film thicknesses in different regions of the same wafer 10, and further resulting in poor film formation uniformity of the wafer 10.
[0004] SUMMARY
[0005] The present application discloses a heating device and semiconductor processing equipment, which can solve the problem of poor film formation uniformity of the wafer.
[0006] In order to solve the above problems, the present application adopts the following technical solutions:
[0007] The embodiment of the present application discloses a heating device for carrying and heating a workpiece to be processed in a semiconductor processing equipment, which comprises a base, a heating assembly and a cooling mechanism, wherein:
[0008] The heating assembly is provided with a first gas passage, an outlet of the first gas passage is located at an edge region of a heating surface of the heating assembly, and an inlet of the first gas passage is located at a surface of the heating assembly which is away from the heating surface, the first gas passage being used for blowing gas to an edge of the workpiece to be processed.
[0009] The base is arranged at a side of the heating assembly which is away from the heating surface, and the base and the heating assembly form a mounting space therebetween, the cooling mechanism being arranged in the mounting space and at a position corresponding to the edge region of the heating surface, and being used for cooling the heating assembly.
[0010] Optionally, the cooling mechanism comprises a ring assembly, at least one of a cooling water channel for conveying cooling liquid and a cooling gas channel for conveying cooling gas being integrated in the ring assembly; wherein an outlet of the cooling gas channel is opposite to the surface of the heating assembly which is away from the heating surface, and is used for blowing the cooling gas towards the surface.
[0011] Optionally, the ring assembly is integrated with the cooling water channel for conveying cooling liquid and the cooling gas channel for conveying cooling gas; the ring assembly comprises a ring body, a first ring cover plate and a second ring cover plate, wherein a ring groove is formed on a first surface of the ring body which is opposite to the surface of the heating assembly which is away from the heating surface, the first ring cover plate being sealingly connected with the ring body and constituting a closed cooling water channel with the ring groove.
[0012] A plurality of blowing holes are arranged in the ring body, and an outlet of each blowing hole is located on the first surface, and an inlet of each blowing hole is located on a second surface of the ring body which is away from the first surface; the second ring cover plate is sealingly connected with the ring body at a side where the second surface of the ring body is located, and the second ring cover plate and the ring body constitute a closed ring gas channel which is in communication with the inlets of the blowing holes.
[0013] Optionally, a plurality of the blowing holes are distributed on both inner and outer sides of the cooling water channel, and the blowing holes on the same side are distributed along a circumferential direction of the ring body.
[0014] Optionally, a heating portion is further integrated in the ring assembly, the heating portion being used for heating at least one of the cooling water channel and the cooling gas channel integrated in the ring assembly.
[0015] Optionally, the heating portion is a heating pipe which is embedded in the ring assembly and is wound in a planar spiral shape around an axis of the ring assembly.
[0016] Optionally, the cooling mechanism is in contact with the surface of the heating assembly away from the heating surface; or the cooling mechanism is spaced apart from the surface of the heating assembly away from the heating surface, and a heat-conducting part in contact with the cooling mechanism and the surface of the heating assembly away from the heating surface is arranged between the cooling mechanism and the surface of the heating assembly away from the heating surface.
[0017] Optionally, the heating assembly comprises a heating body, an air duct plate arranged on the side of the heating body away from the heating surface, and an air source channel, wherein the air duct plate and the heating body form a second air channel, the second air channel is in communication with the inlet of the first air channel, and the second air channel is also in communication with the air source channel.
[0018] Optionally, the second air channel comprises a first sub-channel and a second sub-channel, wherein the first sub-channel is in communication with the first air channel and the second sub-channel; the second sub-channel is in communication with the air source channel.
[0019] The gas storage volume of the second sub-channel and the gas storage volume of the first air channel are both smaller than the gas storage volume of the first sub-channel, and the flow rate of the second sub-channel is greater than the flow rate of the first air channel.
[0020] Optionally, the first sub-channel is an annular channel; the second sub-channel is a plurality of second sub-channels, the plurality of second sub-channels are distributed along the circumference of the annular channel, and each of the second sub-channels is a straight channel extending along the radial direction of the annular channel, one end of the straight channel is in communication with the annular channel, and the other end of the straight channel is in communication with the air source channel.
[0021] Optionally, the second air channel is a groove formed in at least one of the two surfaces opposite to each other of the air duct plate and the heating body.
[0022] Optionally, a mounting groove is formed in the surface of the base opposite to the air duct plate, the mounting groove and the air duct plate form the mounting space, the cooling mechanism is arranged at the groove bottom of the mounting groove, and a high-temperature-resistant part is arranged between the cooling mechanism and the groove bottom.
[0023] Optionally, a support is arranged in the mounting space, and the support is supported between the cooling mechanism and the groove bottom of the mounting groove.
[0024] Optionally, the heating assembly further comprises an edge ring surrounding the heating body; the first gas channel comprises a third sub-channel and a fourth sub-channel, wherein the third sub-channel is arranged in the heating body, and an outlet of the third sub-channel is located on the outer peripheral wall of the heating body; an inlet of the third sub-channel is located on the surface of the heating body away from the heating surface and communicates with the first sub-channel.
[0025] The inner peripheral wall of the edge ring is arranged in a spaced manner with the outer peripheral wall of the heating body to form the fourth sub-channel, and the fourth sub-channel communicates with the third sub-channel.
[0026] Optionally, the edge ring is provided with a cooling channel for conveying a cooling medium.
[0027] The embodiment of the present application further discloses a semiconductor processing equipment comprising a reaction chamber, and the reaction chamber is provided with the heating device.
[0028] The technical scheme adopted by the present application can achieve the following beneficial effects:
[0029] In the heating device and the semiconductor processing equipment disclosed by the embodiment of the present application, the ventilation structure is arranged in the heating assembly, the ventilation structure is used for blowing gas to the edge of the workpiece to be processed, and the blown gas can take away the heat of the edge of the workpiece to be processed. Meanwhile, the base and the heating assembly form a mounting space between each other, the cooling mechanism is arranged in the mounting space and located at a position corresponding to the edge region of the heating surface, and is used for cooling the heating assembly. By arranging the cooling mechanism at the position corresponding to the edge region of the heating surface, the cooling mechanism can cool the edge region of the heating assembly, so that the heat-conducting gas between the workpiece to be processed and the heating assembly can be uniformly distributed, and the gas pressure of the heat-conducting gas between the workpiece to be processed and the heating assembly at the edge of the workpiece to be processed is prevented from being larger than that at the middle region of the workpiece to be processed. Meanwhile, by cooling the edge region of the heating assembly by the cooling mechanism, the edge temperature of the workpiece to be processed can be made as same as the middle region temperature as much as possible during the heating process of the workpiece to be processed, so that when the temperature of the edge of the workpiece to be processed reaches the process temperature, the temperature of the middle region of the workpiece to be processed has not reached the process temperature, thereby making the temperature distribution of the workpiece to be processed more uniform, avoiding the film thickness of different regions of the same workpiece to be processed being different, and further improving the film uniformity of the workpiece to be processed. BRIEF DESCRIPTION OF DRAWINGS
[0030] In order to more clearly illustrate the technical scheme in the embodiments of the present application or the background art, the drawings needed to be used in the embodiments or the background art will be briefly introduced as follows. Obviously, other drawings can also be obtained by those skilled in the art without any creative effort on the basis of these drawings.
[0031] Fig. 1 is a schematic diagram of a structure of a heater in the prior art;
[0032] Fig. 2 is a schematic diagram of a structure of a heating device disclosed in an embodiment of the present application;
[0033] Fig. 3 is a schematic diagram of a structure of a cooling mechanism disclosed in an embodiment of the present application;
[0034] Fig. 4 is a schematic diagram of a structure of a heating device disclosed in another embodiment of the present application. DETAILED DESCRIPTION
[0035] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below in conjunction with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.
[0036] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein. And the objects distinguished by "first", "second", etc. are usually a category, not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally represents a "or" relationship between the front and rear associated objects.
[0037] The technical solutions disclosed in various embodiments of the present application will be described in detail below in conjunction with the drawings and specific embodiments and their application scenarios.
[0038] Please refer to Figs. 2 to 4, the present application discloses a heating device, the disclosed heating device is used for carrying and heating a workpiece 100 to be processed in a semiconductor processing equipment, the workpiece 100 to be processed can usually be a wafer. Specifically, the semiconductor processing equipment usually includes a reaction chamber, the heating device is located in the reaction chamber, during the wafer processing process, the wafer is placed on the heating device, the wafer is heated by the heating device, when the temperature of the wafer reaches the process temperature, the film coating process of the wafer is carried out, and the processing of the wafer is realized.
[0039] The disclosed heating device includes a base 200, a heating assembly, and a cooling mechanism 400, wherein: the heating assembly has a heating surface for carrying a workpiece 100 to be processed, and the heating assembly is provided with a gas blowing structure for blowing the edge of the workpiece 100 to be processed. The heating assembly can have various structures, for example, in the present embodiment, the heating assembly includes a heating body 300, an air duct plate 500 arranged on the side of the heating body 300 away from the above-mentioned heating surface, and a gas source channel 900 for connecting with a gas source (not shown in the figure), wherein the heating body 300 is in the form of a disc for placing and heating the workpiece 100 to be processed. For example, the heating body 300 is provided with a heating pipe which can generate heat and heat the heating body 300 to transfer heat to the workpiece 100 to be processed through the heating body 300.
[0040] The above-mentioned gas blowing structure includes, for example, a first gas channel 310 and a second gas channel 600, wherein: the outlet of the first gas channel 310 is located at the edge area of the above-mentioned heating surface (i.e. the upward surface of the heating body 300 in FIG. 2) of the heating body 300, the inlet of the first gas channel 310 is located at the surface of the heating body 300 away from the above-mentioned heating surface (i.e. the downward surface of the heating body 300 in FIG. 2), and the first gas channel 310 is used for blowing the edge of the workpiece 100 to be processed; the second gas channel 600 is located between the air duct plate 500 and the heating body 300, and the second gas channel 600 is in communication with the inlet of the first gas channel 310, and the second gas channel 600 is also in communication with the above-mentioned gas source channel. The gas provided by the gas source flows to the edge of the workpiece 100 to be processed through the above-mentioned gas source channel 900, the second gas channel 600, and the first gas channel 310 in sequence.
[0041] By blowing the edge of the workpiece 100 to be processed through the above-mentioned first gas channel 310, the back plating or side plating of the workpiece 100 to be processed can be prevented, and the yield of the workpiece 100 to be processed can be improved.
[0042] In some embodiments, the above-mentioned second gas channel 600 is a groove formed in at least one of the two surfaces opposite to each other of the air duct plate 500 and the heating body 300, and the second gas channel 600 can be formed after the air duct plate 500 and the heating body 300 are connected, and the forming method of the second gas channel 600 in the present embodiment is not limited.
[0043] In the heating device disclosed in the embodiments of the present application, the outlet of the first gas passage 310 is located at the edge region of the heating surface of the heating body 300, so that the first gas passage 310 can blow gas to the edge of the workpiece 100 to be processed, and the blown gas can take away the heat of the edge of the workpiece 100 to be processed. Moreover, by arranging the first gas passage 310 at the outer edge region of the heating body 300, the gas flowing through the first gas passage 310 can take away the heat of the outer edge region of the heating body 300, so that the gas in the first gas passage 310 can cool the outer edge region of the heating body 300, and the blown gas in the first gas passage 310 can also take away the heat of the edge of the workpiece 100 to be processed, so that the temperature distribution of the workpiece 100 to be processed is more uniform.
[0044] In order to make the gas flowing through the first gas passage 310 take away more heat of the outer edge region of the heating body 300, in an alternative embodiment, the second gas passage 600 can include a first sub-passage 610 and a second sub-passage 620, wherein the first sub-passage 610 is in communication with the first gas passage 310 and the second sub-passage 620, and the second sub-passage 620 is in communication with the gas source passage 900. The gas flowing out of the gas source passage 900 flows into the first gas passage 310 through the second sub-passage 620 and the first sub-passage 610 in sequence.
[0045] In the above embodiment, the gas storage volume of the second sub-passage 620 and the gas storage volume of the first gas passage 310 are both smaller than the gas storage volume of the first sub-passage 610, and the flow rate of the second sub-passage 620 is greater than the flow rate of the first gas passage 310, so that the gas is gathered at the first sub-passage 610 to achieve the effect of pressure build-up, thereby increasing the flow rate of the gas in the first gas passage 310. The gas with a faster flow rate can take away more heat of the outer edge region of the heating body 300, so that the gas with a faster flow rate can better cool the outer edge region of the heating body 300 when flowing through the first gas passage 310, and the gas with a faster flow rate can also take away more heat when blown to the edge of the workpiece 100 to be processed, so that the temperature distribution of the workpiece 100 to be processed is more uniform, and the heating body 300 can more uniformly heat the workpiece 100 to be processed during the heating process of the workpiece 100 to be processed, so that the edge temperature of the workpiece 100 to be processed is as same as the middle region temperature as possible, further avoiding the film thickness of different regions of the same workpiece 100 to be processed being different, and further improving the film uniformity of the workpiece 100 to be processed.
[0046] In some embodiments, the first sub-channel 610 is optionally an annular channel; the second sub-channels 620 are a plurality of second sub-channels 620, the plurality of second sub-channels 620 are spaced apart along the circumference of the annular channel, and each of the second sub-channels 620 is a straight channel extending along the radial direction of the annular channel, one end of the straight channel is in communication with the annular channel, and the other end of the straight channel is in communication with the gas source channel 900. In this way, the gas flowing out of the gas source channel 900 can flow uniformly to the annular channel through the plurality of straight channels at the same time, thereby improving the uniformity of gas distribution.
[0047] As described above, the first sub-channel 610 and the second sub-channel 620 can be formed in various ways, and the forming way of the first sub-channel 610 and the second sub-channel 620 is not limited in the embodiments of the present application. Specifically, the annular channel (i.e., the first sub-channel 610) and the plurality of straight channels (i.e., the second sub-channels 620) are annular grooves and a plurality of connecting grooves respectively formed in at least one of the two surfaces opposite to each other of the gas duct plate 500 and the heating body 300. Compared with the way of forming the first sub-channel 610 and the second sub-channel 620 by opening holes, the way of forming the annular grooves and the connecting grooves on at least one of the gas duct plate 500 and the heating body 300 is more conducive to processing, has fewer procedures, and is simple to process, thereby reducing the processing difficulty of the gas duct plate 500 and / or the heating body 300, and reducing the cost of the processing process.
[0048] In some embodiments, the heating assembly further comprises an edge ring 301 surrounding the heating body 300. The first gas channel 310 comprises a third sub-channel 310b and a fourth sub-channel 310a, wherein the third sub-channel 310b is arranged in the heating body 300, and the outlet of the third sub-channel 310b is located on the outer peripheral wall of the heating body 300; the inlet of the third sub-channel 310b is located on the surface of the heating body 300 away from the heating surface and is in communication with the first sub-channel 610; and the inner peripheral wall of the edge ring 301 is spaced apart from the outer peripheral wall of the heating body 300 to form the fourth sub-channel 310a, and the fourth sub-channel 310a is in communication with the third sub-channel 310b. Optionally, a groove is formed in one of the inner peripheral wall of the edge ring 301 and the outer peripheral wall of the heating body 300, and the fourth sub-channel 310a can be formed after the edge ring 301 and the heating body 300 are connected. The forming way of the fourth sub-channel 310a is not limited in the embodiments of the present application. The other structures and functions of the edge ring 301 and the heating body 300 are known technologies, and are not described herein for the sake of brevity.
[0049] In an alternative embodiment, as shown in FIG. 4, the edge ring 301 is provided with a cooling channel 320 for conveying cooling medium. The cooling medium is, for example, cooling gas or cooling water. The cooling gas or cooling water in the cooling channel 320 can take away the heat of the edge of the heating body 300, so that the temperature of the edge of the heating body 300 is lower. During the heating process of the heating device, the heat-conducting gas between the workpiece 100 and the heating body 300 can be uniformly distributed, preventing the pressure of the heat-conducting gas between the workpiece 100 and the heating body 300 from being higher at the edge of the workpiece 100 and lower at the middle region of the workpiece 100, so that the heating body 300 can uniformly heat the workpiece 100, so that the temperature of the edge of the workpiece 100 and the temperature of the middle region of the workpiece 100 are as same as possible, and the temperature distribution of the workpiece 100 is more uniform, avoiding the film thickness of different regions of the same workpiece 100 being different, and further improving the film uniformity of the workpiece 100.
[0050] Further, the cooling channel 320 is a ring-shaped water channel, which can surround the heating body 300, so that more heat of the edge of the heating body 300 can be taken away by the cooling gas or cooling water in the cooling channel 320, further improving the cooling effect of the cooling channel 320 on the edge of the heating body 300, and further improving the film uniformity of different regions of the workpiece 100.
[0051] The base 200 is a basic component of the heating device, which can provide a mounting base for other components of the heating device. Specifically, the base 200 is arranged on the side of the heating assembly away from the heating surface thereof, and the base 200 and the heating assembly form a mounting space therebetween, and the cooling mechanism 400 is arranged in the mounting space and located at a position corresponding to the edge region of the heating surface, for cooling the heating assembly.
[0052] By setting the cooling mechanism 400 at a position corresponding to the edge region of the heating surface, the cooling mechanism 400 can cool the edge region of the heating assembly, so that the heat-conducting gas between the workpiece 100 and the heating assembly can be uniformly distributed, preventing the gas pressure between the workpiece 100 and the heating assembly from being higher at the edge of the workpiece 100 and lower in the middle region of the workpiece 100. At the same time, by cooling the edge region of the heating assembly through the cooling mechanism 400, the temperature of the edge of the workpiece 100 can be made as uniform as possible as the workpiece 100 is heated, preventing the temperature of the middle region of the workpiece 100 from reaching the process temperature while the temperature of the edge of the workpiece 100 reaches the process temperature, so that the temperature distribution of the workpiece 100 is more uniform, avoiding the film thickness of different regions of the same workpiece being different, and thus improving the film uniformity of the workpiece.
[0053] The cooling mechanism 400 can absorb heat when in operation, and functions to cool the heating body 300. The air channel plate 500 is provided with a plurality of air channels, some of which are used to blow air to the edge of the workpiece 100, preventing the workpiece 100 from being back-plated or side-plated, and improving the yield of the workpiece 100, and some of which are used to form a negative pressure in the heating device, so that the heating device can adsorb the workpiece 100.
[0054] In some embodiments, the cooling mechanism 400 can include an annular assembly, as shown in FIG. 3, which is integrated with at least one of a cooling water channel 430 for conveying cooling liquid and a cooling air channel 410 for conveying cooling gas; wherein the outlet of the cooling air channel 410 is opposite to the surface of the heating assembly facing away from the heating surface, for blowing cooling air towards the surface. Since the cooling mechanism 400 adopts an annular assembly corresponding to the edge region of the heating surface, it can cool the edge region of the heating assembly, and the relative area between the annular assembly and the outer edge region of the air channel plate 500 is large, so that the annular assembly can quickly remove the heat from the outer edge region of the air channel plate 500, and thus the cooling mechanism 400 can better cool the heating body 300, so that the film thickness of different regions of the workpiece 100 can be as uniform as possible.
[0055] The structure of the ring assembly can be various, for example, as shown in FIG. 3, the ring assembly is integrated with a cooling water channel 430 for conveying cooling liquid and a cooling gas channel 410 for conveying cooling gas. Moreover, the ring assembly comprises a ring body 401, a first ring cover plate 402 and a second ring cover plate 403, wherein a ring groove is formed on a first surface of the ring body 401 opposite to the surface of the heating assembly away from the heating surface (i.e. the upward surface of the ring body 401), the first ring cover plate 402 is sealingly connected with the ring body 401, and forms a closed cooling water channel 430 with the ring groove. Cooling water can be introduced into the cooling water channel 430. In the specific cooling process, the cooling water in the cooling water channel 430 can take away the heat conducted from the outer edge area of the gas channel plate 500 to the cooling mechanism 400, so that the cooling mechanism 400 can take away the heat of the outer edge area of the gas channel plate 500, thereby achieving the effect of cooling the outer edge area of the gas channel plate 500, and further achieving the effect of cooling the edge of the heating body 300. Compared with the gas cooling method, the water cooling method has better cooling effect, so that the cooling mechanism 400 can better cool the outer edge area of the gas channel plate 500, thereby making the temperature distribution of the workpiece 100 to be processed more uniform, so as to make the film forming uniformity of the workpiece 100 to be processed better.
[0056] Moreover, as shown in FIG. 3, a plurality of air blowing holes 410b are further provided in the ring body 401, and the outlet of each air blowing hole 410b is located on the first surface of the ring body 401, and the inlet of each air blowing hole 410b is located on the second surface of the ring body 401 away from the first surface (i.e. the downward surface of the ring body 401); the second ring cover plate 403 is sealingly connected with the ring body 401 on the side of the second surface of the ring body 401, and the second ring cover plate 403 forms a closed ring gas channel 410a with the ring body 401, which is used for the communication between the ring gas channel 410a and the inlets of the air blowing holes 410b. Cooling gas can flow to each air blowing hole 410b in turn through the ring gas channel 410a, and is blown to the outer edge area of the gas channel plate 500 through the outlet of the air blowing hole 410b, so that the cooling gas takes away the heat of the outer edge area of the gas channel plate 500, thereby achieving the effect of cooling the outer edge area of the gas channel plate 500. This arrangement is simple and reliable, which facilitates the design of the cooling mechanism 400 and reduces the design difficulty of the cooling mechanism 400. Moreover, the blowing of the cooling gas is less likely to affect the processing of the workpiece 100 to be processed, and the cooling gas is less likely to affect the environment, and the cost of the cooling gas is relatively low.
[0057] In some optional embodiments, in order to improve the cooling uniformity in the circumferential direction of the cooling body 401, the plurality of air blowing holes 410b are distributed on the inner and outer sides of the cooling water channel 430, and the air blowing holes 410b on the same side are distributed along the circumference of the ring body 401.
[0058] It should be noted that in the embodiment, the cooling water channel 430 and the cooling gas channel 410 are integrated in the annular assembly, so that the outer edge region of the gas channel plate 500 can be cooled by the cooling gas and the outer edge region of the gas channel plate 500 can be cooled by the cooling water, and the cooling water in the cooling water channel 430 can also cool the cooling gas in the cooling gas channel 410, so that the cooling effect of the cooling mechanism 400 on the edge of the heating body 300 is better, and the temperature distribution of the workpiece 100 to be processed is more uniform. Of course, in actual application, only one of the cooling water channel 430 and the cooling gas channel 410 can be provided according to specific needs.
[0059] In the process of cooling the edge of the heating body 300 by the cooling mechanism 400, the temperature of the cooling gas or the cooling water may be too low, which may cause the edge of the workpiece 100 to be processed to be cooled too much by the cooling mechanism 400, and the temperature of the middle region of the workpiece 100 to be processed to be too high, so that the temperature distribution of the workpiece 100 to be processed is uneven, and the film thickness of different regions of the same workpiece 100 to be processed is different. Based on this, in an alternative embodiment, the annular assembly further integrates a heating portion 440 for heating at least one of the cooling water channel 430 and the cooling gas channel 410 integrated in the annular assembly. In this way, the temperature of the cooling gas can be prevented from being too low, which may cause the edge of the workpiece 100 to be processed to be cooled too much by the cooling mechanism 400, so that the temperature distribution of the workpiece 100 to be processed is more uniform, and the temperature of the edge of the workpiece 100 to be processed is not too low, and the temperature of the middle region of the workpiece 100 to be processed is not too high, so that the film thickness of different regions of the same workpiece 100 to be processed is as same as possible.
[0060] Of course, the heating portion 440 can also be used to heat the cooling water in the cooling water channel 430 to prevent the temperature of the cooling water from being too low, which may cause the edge of the workpiece 100 to be processed to be cooled too much by the cooling mechanism 400, and similarly, the temperature distribution of the workpiece 100 to be processed is more uniform, so that the temperature of the edge of the workpiece 100 to be processed is not too low, and the temperature of the middle region of the workpiece 100 to be processed is not too high, so that the film thickness of different regions of the same workpiece 100 to be processed is as same as possible.
[0061] The structure of the heating portion 440 can be various, for example, the heating portion 440 is a heating pipe embedded in the annular assembly (for example, the annular body 401), which is wound in a planar spiral around the axis of the annular assembly, so as to ensure the uniformity of heating in the circumferential direction of the cooling body 401.
[0062] In the embodiment of the present application, the cooling mechanism 400 can be in contact with the surface of the heating assembly away from the heating surface, for example, the annular assembly can be in contact with the outer edge area of the air duct plate 500, so that the cooling mechanism 400 can be directly connected with the outer edge area of the air duct plate 500, and the cooling mechanism 400 can absorb the heat of the edge of the heating body 300 through the outer edge area of the air duct plate 500, so that the cooling mechanism 400 can cool the edge of the heating body 300. During the heating of the workpiece 100 to be processed, the heating body 300 can uniformly heat the workpiece 100 to be processed, so that the temperature distribution of the workpiece 100 to be processed is more uniform.
[0063] Alternatively, the cooling mechanism 400 can also be arranged in a spaced manner with the surface of the heating assembly away from the heating surface, and a heat conduction part 700 in contact with the cooling mechanism 400 and the surface of the heating assembly away from the heating surface is arranged between the cooling mechanism 400 and the surface of the heating assembly away from the heating surface. For example, the annular assembly is opposite to the outer edge area of the air duct plate 500, that is, the annular assembly has a distance from the outer edge area of the air duct plate 500, and the heat conduction part 700 is arranged between the annular assembly and the outer edge area of the air duct plate 500, which can conduct the heat of the outer edge area of the air duct plate 500 to the annular assembly, so that the annular assembly can take away the heat of the outer edge area of the air duct plate 500, thereby cooling the edge of the heating body 300. The above two heat conduction connection modes can better cool the edge of the heating body 300 by the cooling mechanism 400, so that the temperature distribution of the workpiece 100 to be processed is more uniform. The heat conduction part 700 can be a copper plate, a stainless steel fin, a copper fin, a heat-conducting glue, and a heat-conducting foam, etc.
[0064] As described above, the base 200 and the heating assembly (for example, the air duct plate 500) form a mounting space between each other, and the cooling mechanism 400 is arranged in the mounting space. Specifically, the surface of the base 200 opposite to the air duct plate 500 can be provided with a mounting groove, and after the base 200 is connected with the air duct plate 500, the mounting groove can form a mounting space with the air duct plate 500, and the cooling mechanism 400 is arranged at the bottom of the mounting groove, so that the cooling mechanism 400 is arranged in the mounting space, and a high-temperature-resistant part is arranged between the cooling mechanism 400 and the bottom of the mounting groove, so as to avoid the heat on the heating body 300 from being conducted to the base 200. At the same time, the high-temperature-resistant part can make the cooling mechanism 400 more stably arranged at the bottom of the mounting groove, so as to avoid the connection between the cooling mechanism 400 and the bottom of the mounting groove from being invalid due to high temperature. In the embodiment, the mounting space is formed in a simple manner, and the cooling mechanism 400 is installed in a simple and reliable manner, which is convenient for the staff to arrange.
[0065] Further, a support 800 can be arranged in the mounting space, the support 800 being supported between the cooling mechanism 400 and the bottom of the mounting groove, so as to prevent the cooling mechanism 400 from contacting the bottom of the mounting groove in a large area, thereby preventing the cooling mechanism 400 from absorbing heat on the base 200, and further ensuring that the cooling mechanism 400 can better cool the heating body 300, and improving the cooling effect of the cooling mechanism 400 on the heating body 300.
[0066] To sum up, the heating device disclosed in the embodiments of the present application has the ventilation structure arranged in the heating assembly, the ventilation structure being used for blowing air to the edge of the workpiece to be processed, and the blown air can take away the heat of the edge of the workpiece to be processed. Meanwhile, the base and the heating assembly form a mounting space between each other, and the cooling mechanism is arranged in the mounting space and located at a position corresponding to the edge region of the heating surface, and is used for cooling the heating assembly. By arranging the cooling mechanism at the position corresponding to the edge region of the heating surface, the cooling mechanism can cool the edge region of the heating assembly, so that the heat-conducting gas between the workpiece to be processed and the heating assembly can be uniformly distributed, and the gas pressure of the heat-conducting gas between the workpiece to be processed and the heating assembly at the edge of the workpiece to be processed is prevented from being larger than that at the middle region of the workpiece to be processed. Meanwhile, by cooling the edge region of the heating assembly by the cooling mechanism, the edge temperature of the workpiece to be processed can be made as same as the middle region temperature of the workpiece to be processed as possible during the heating process of the workpiece to be processed, so that the temperature of the middle region of the workpiece to be processed is prevented from reaching the process temperature when the temperature of the edge of the workpiece to be processed reaches the process temperature, and the temperature distribution of the workpiece to be processed is made more uniform, the film thickness of different regions of the same workpiece to be processed is prevented from being different, and the film uniformity of the workpiece to be processed is further improved.
[0067] Based on the heating device disclosed in the embodiments of the present application, the present application further discloses a semiconductor processing equipment, which comprises a reaction chamber, and the reaction chamber is provided with the heating device as described in the above embodiments.
[0068] The semiconductor processing equipment disclosed in the embodiments of the present application can make the edge temperature of the workpiece to be processed as same as the middle region temperature of the workpiece to be processed as possible during the heating process of the workpiece to be processed, so that the temperature of the middle region of the workpiece to be processed is prevented from reaching the process temperature when the temperature of the edge of the workpiece to be processed reaches the process temperature, and the temperature distribution of the workpiece to be processed is made more uniform, the film thickness of different regions of the same workpiece to be processed is prevented from being different, and the film uniformity of the workpiece to be processed is further improved.
[0069] In the above embodiments of the present application, the differences between the embodiments are mainly described, and the different optimization features of the embodiments can be combined to form a better embodiment as long as they are not contradictory. In view of the brevity of the text, the details are not described herein.
[0070] The above description is only the preferred embodiment of the application, not intended to limit the application. Any modification, equivalent replacement and improvement made within the spirit and principle of the application shall fall within the scope of the claims of the application.
Claims
1. A heating device for carrying and heating a workpiece to be processed in a semiconductor processing apparatus, characterized by, The heating device comprises a base, a heating assembly and a cooling mechanism, wherein: The heating assembly is provided with a ventilation structure for blowing air to the edge of the workpiece to be processed; The base is arranged on the side of the heating assembly away from the heating surface, and the base and the heating assembly form a mounting space therebetween, and the cooling mechanism is arranged in the mounting space and located at a position corresponding to the edge region of the heating surface for cooling the heating assembly.
2. The heating device of claim 1, wherein The cooling mechanism comprises a ring assembly, and at least one of a cooling water channel for conveying cooling liquid and a cooling gas channel for conveying cooling gas is integrated in the ring assembly; wherein the outlet of the cooling gas channel is opposite to the surface of the heating assembly away from the heating surface, so as to blow the cooling gas towards the surface.
3. The heating device of claim 2, wherein, The ring assembly is integrated with a cooling water channel for conveying cooling liquid and a cooling gas channel for conveying cooling gas; the ring assembly comprises a ring body, a first ring cover plate and a second ring cover plate, wherein a ring groove is formed on the first surface of the ring body opposite to the surface of the heating assembly away from the heating surface, the first ring cover plate is sealingly connected with the ring body and forms a closed cooling water channel with the ring groove; A plurality of air blowing holes are arranged in the ring body, and the outlet of each air blowing hole is located on the first surface, and the inlet of each air blowing hole is located on the second surface of the ring body away from the first surface; the second ring cover plate is sealingly connected with the ring body on the side of the second surface of the ring body, and the second ring cover plate and the ring body form a closed ring gas channel, and the ring gas channel is in communication with the inlets of the air blowing holes.
4. The heating device of claim 3, wherein The air blowing holes are distributed on both sides of the cooling water channel, and the air blowing holes on the same side are distributed along the circumference of the ring body.
5. The heating device of claim 2, wherein, A heating part is further integrated in the ring assembly, and the heating part is used for heating at least one of the cooling water channel and the cooling gas channel integrated in the ring assembly.
6. The heating device of claim 5, wherein, The heating part is a heating pipe embedded in the ring assembly, and the heating pipe is wound in a planar spiral around the axis of the ring assembly.
7. The heating device according to any one of claims 1-6, characterized in that The cooling mechanism is in contact with the surface of the heating assembly away from the heating surface, or the cooling mechanism is arranged in a spaced manner with the surface of the heating assembly away from the heating surface, and a heat conduction part in contact with the cooling mechanism and the surface of the heating assembly away from the heating surface is arranged between the cooling mechanism and the surface of the heating assembly away from the heating surface.
8. The heating device of claim 1, wherein, The heating assembly comprises a heating body, an air channel plate arranged on the side of the heating body away from the heating surface, and an air source channel for connecting with an air source, wherein the ventilation structure comprises a first gas channel and a second gas channel, wherein the outlet of the first gas channel is located on the edge region of the heating surface of the heating body, the inlet of the first gas channel is located on the surface of the heating body away from the heating surface, and the first gas channel is used for blowing air to the edge of the workpiece to be processed; The second gas passage is located between the air passage plate and the heating body, and the second gas passage is in communication with the inlet of the first gas passage and the gas source passage.
9. The heating device of claim 8, wherein, The second gas passage comprises a first sub-passage and a second sub-passage, wherein the first sub-passage is in communication with the first gas passage and the second sub-passage; and the second sub-passage is in communication with the gas source passage. The gas storage volume of the second sub-passage and the gas storage volume of the first gas passage are both smaller than the gas storage volume of the first sub-passage, and the flow rate of the second sub-passage is greater than the flow rate of the first gas passage.
10. The heating device of claim 9, wherein, The first sub-passage is an annular passage; the second sub-passage is a plurality of passages, and the plurality of second sub-passages are distributed along the circumference of the annular passage; and each of the second sub-passages is a straight passage extending along the radial direction of the annular passage, one end of the straight passage is in communication with the annular passage, and the other end of the straight passage is in communication with the gas source passage.
11. The heating device according to any one of claims 8-10, characterized in that The second gas passage is a groove formed in at least one of the two surfaces of the air passage plate and the heating body.
12. The heating device of claim 8, wherein, The surface of the base opposite to the air passage plate is provided with a mounting groove, the mounting groove and the air passage plate form the mounting space, the cooling mechanism is arranged at the groove bottom of the mounting groove, and a high-temperature-resistant part is arranged between the cooling mechanism and the groove bottom.
13. The heating device of claim 12, wherein, A support is arranged in the mounting space, and the support is supported between the cooling mechanism and the groove bottom of the mounting groove.
14. The heating device of claim 9, wherein, The heating assembly further comprises an edge ring surrounding the heating body; the first gas passage comprises a third sub-passage and a fourth sub-passage, wherein the third sub-passage is arranged in the heating body, and the outlet of the third sub-passage is located on the outer peripheral wall of the heating body; the inlet of the third sub-passage is located on the surface of the heating body away from the heating surface, and is in communication with the first sub-passage; The inner peripheral wall of the edge ring is arranged in a spaced manner with the outer peripheral wall of the heating body to form the fourth sub-passage, and the fourth sub-passage is in communication with the third sub-passage.
15. The heating device of claim 14, wherein, A cooling passage for conveying cooling medium is arranged in the edge ring.
16. A semiconductor processing apparatus comprising a reaction chamber, characterized by, The reaction chamber is provided with the heating device as claimed in any one of claims 1 to 15.
